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WO2018114590A1 - Procédé de fabrication de microstructures - Google Patents

Procédé de fabrication de microstructures Download PDF

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Publication number
WO2018114590A1
WO2018114590A1 PCT/EP2017/082807 EP2017082807W WO2018114590A1 WO 2018114590 A1 WO2018114590 A1 WO 2018114590A1 EP 2017082807 W EP2017082807 W EP 2017082807W WO 2018114590 A1 WO2018114590 A1 WO 2018114590A1
Authority
WO
WIPO (PCT)
Prior art keywords
structures
laser
vertical
photosensitive material
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2017/082807
Other languages
German (de)
English (en)
Inventor
Julia PURTOV
Peter Rogin
Elmar Kroner
Mareike FRENSEMEIER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leibniz Institut fuer Neue Materialien Gemeinnuetzige GmbH
Original Assignee
Leibniz Institut fuer Neue Materialien Gemeinnuetzige GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leibniz Institut fuer Neue Materialien Gemeinnuetzige GmbH filed Critical Leibniz Institut fuer Neue Materialien Gemeinnuetzige GmbH
Publication of WO2018114590A1 publication Critical patent/WO2018114590A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0037—Production of three-dimensional images

Definitions

  • Optical microstructures which act in the manner of photonic crystals have hitherto been produced by different methods.
  • multi-film systems mainly deposited, optionally followed by lateral structuring (by Gasphasenprozes ⁇ se such as PVD, CVD, ALD by conventional lithography imaging exposure or exposure masks ⁇ )
  • the vertical structure is limited to a strict periodicity.
  • Other ⁇ lithography methods such as laser interference lithography or electron beam lithography are not capable of vertical to lateral centering struc ⁇ high resolution.
  • conventional two-photon lithography allows a high degree of flexibility due to freely selectable arrangement of the structures in all three spatial directions, it is not significantly lower in the vertical resolution to a depth of focus
  • the smallest wavelength at which generated structures in the manner of a photonic crystal can interact with light is significantly larger than the wavelength originally used to create the structure.
  • the self-assembly of colloidal systems is essentially limited to periodic structures. Disturbances of this Anord ⁇ voltage occur, but most are controllable in their density and not in their specific localization.
  • this lateral resolution and vertical resolution of the structural ⁇ structures strictly on the angle of the laser beams are dependent and therefore can not be influenced independently of one another.
  • the vertical resolution is achieved flat by a self-interference pattern of a UV lamp in conjunction with a light mask. Therefore, all structures have the same vertical structure and can not be freely varied.
  • the object of the invention is to provide a method which overcomes the disadvantages of the prior art and in particular allows the production of structures with improved structuring in the vertical direction.
  • the object is achieved by a method in which a photosensitive material is provided on a substrate and a laser is focused in one or more regions of the material such that in this region or these regions the photosensitive material is activated by multiphoton absorption, wherein the laser is reflected on a reflective surface and is modulated by interference with itself in the region or regions.
  • Method may also include other, not mentioned steps.
  • the invention relates to a method of Multiphotonenlithogra- pie.
  • the wavelength of the excitation laser and the excitation wavelength of the photosensitive ⁇ Ma terials are chosen so that by multiple photon excitation with more activation is triggered. Accordingly, gen the excitation wavelengths mostly in the high frequency range, eg. B. in the UV range, while the laser used in the low-frequency range, z. B. in the infrared range, are.
  • the need for multiple photons requires a very high focus of the laser, which is very high
  • the excitation is effected by the absorption of 2 or more photons, preferably 2, 3 or 4 photons, in particular 2 or 3 photons.
  • the method is also referred to as two-photon lithography .
  • the wavelength of the laser is preferably between 450 nm and 3 ⁇ m, in particular between 640 nm and 3 ⁇ m.
  • a spatial resolution of 200 nm in the lateral direction is achieved by optical focusing, for example via droplet lenses.
  • optical focusing for example via droplet lenses.
  • the vertical direction i. perpendicular to the surface, on the other hand, only a resolution of approx. 600 nm is possible because the laser can only be focused to a limited extent there.
  • the focusing preferably takes place only in a narrowly limited area of the surface.
  • the generation of the structures on the surface can be precisely controlled.
  • the laser is focused in a lateral direction on a range.
  • these features Due to the interference, these features have a pitch of half the write wavelength divided by the refractive index of the material.
  • the activated area can expand. This distance may still change due to shrinkage and swelling of the polymerized areas in later development steps. These steps can therefore also be used specifically to influence the final structure.
  • Akti ⁇ vation in one area.
  • different areas can be activated one after the other within a photosensitive material. How long a particular area is exposed to one or more pulses depends on the desired structure. By appropriate variations of the parameters, in particular those of successive regions, structures with different vertical distances can be obtained.
  • the exposure can also be interrupted by interrupting the beam path, for example, when a certain activation has been achieved for a certain range.
  • the exposure can also be interrupted during writing of the structures, for example in order to control specific areas in the photosensitive material, in order to sequentially expose separate areas or to change the parameters of the exposure.
  • only an area with a certain vertical spacing is preferably activated during an exposure.
  • the selective activation can be used differently depending on the photosensitive material. For example, spatially resolved fluorene emission or chemical functionalization can be produced.
  • the photosensitive material in the inactivated state is liquid or highly viscous. It is preferably in the to be exposed Be ⁇ reaching a homogeneous layer on the substrate.
  • the method is used to form a structure in the photosensitive material by the photoactivation.
  • the photosensitive material is preferably a photosensitive resist (photoresist) whose solubility is changed by the photopolymerization.
  • a photosensitive resist photoresist
  • With a negative varnish a free-standing structure is created after removal of the unexposed material.
  • voids are formed after removal of the exposed material.
  • Such a photosensitive material in this case preferably comprises at least one suitable photoinitiator and at least one photoreactive substance which is activated via the photoinitiator. This can, for example, lead to a change in the solubility.
  • the absorption wavelength can be adjusted depending on the wavelength of the laser. It must be selected for multi-photon lithography so is that no suggestion he ⁇ follows at the wavelength of the laser, but only in multiphoton absorption.
  • the photoinitiator are preferably compounds which, upon excitation, lead to the formation of radicals or ions. This can be done for example by the decomposition of the photoinitiator. Preference is given to the formation of radicals.
  • negative coatings examples include SU-8, hybrid polymers, acrylic-based photoresists such as IP-L or IP-G. It may play acrylates or ⁇ lacquers on the basis of (meth) act epoxy resin. It may be necessary to thermally treat the paint before exposure to strengthen it, for example. It is also possible to use sol-gel systems or organopolysiloxanes.
  • coatings are paints comprising poly (meth) acrylates having 2, 3, 4, 5 or 6 methacrylate or acrylate groups such as pentaerythritol triacrylate (PETA), trimethylolpropane triacrylate (TMPTA), pentaerythritol tetraacrylate (PETTA), trimethylolpropane trimethacrylate (TMPTMA), poly (ethylene glycol) diacrylate (PEG-DA, avg. M n 700), dipentaerythritol pentaacrylate
  • PETA pentaerythritol triacrylate
  • TMPTA trimethylolpropane triacrylate
  • PETTA pentaerythritol tetraacrylate
  • TMPTMA trimethylolpropane trimethacrylate
  • PEG-DA poly (ethylene glycol) diacrylate
  • PEG-DA avg. M n 700
  • the coatings can include still zusharm ⁇ Lich compounds having a (meth) acrylate such as polyethylene glycol-o- phenylphenyletheracrylat.
  • photoinitiators are ⁇ -hydroxyketones, acylphosphine oxides, ⁇ -aminoketones, benzophenones, phenylglyoxylates, Irgacure 819, Irgacure 369, Darocur TPO, 7-diethylamino-3-thenoylcoumarin (DETC), 2-isopropylthioxanthone (ITX).
  • the material may also include other adjuvants, such as radical scavengers, wetting aids.
  • the material may also include at least one solvent.
  • the photosensitive material onto a substrate customarily ⁇ gen. This can be done for example by spinning, drop, printing, brushing, roller coating, knife coating, dipping card or similar.
  • Examples include dyes, fluorescent or phospho ⁇ resgoingde compounds, nanoparticles, especially conductive nanoparticles, graphenes. These components can be used to provide the structures produced with further properties, such as fluorescence or conductivity.
  • the laser reflecting surface han ⁇ spindles As substrates different substrates are suitable. It can be directly to a, the laser reflecting surface han ⁇ spindles. Alternatively, it may also be a material permeable to the laser light under which the reflective surface is arranged. Such a layer is preferably less than 10 ⁇ m thick.
  • the substrate may have a coating which reflects the wavelength used. This can be for example
  • Metal or semi-metal such as silver, gold, aluminum, steel, gold, platinum, nickel, nickel titanium, silicon, copper. It is not necessary that the surface reflects the wavelength of completeness, ⁇ dig. Partial reflection is also sufficient if adequate energy for multiphoton absorption is still achieved in the area of the modulation. In principle, a sufficiently large difference in refractive index contrast between substrate and photosensitive composition is enough.
  • the surface may be modified prior to application of the photosensitive composition with compounds which enhance the bonding of the photosensitive compositions, in particular the polymerized composition, by means of so-called adhesion promoters.
  • These may be, for example, compounds which contain at least one group which can participate in the activation reaction and at least one group which can bind to the surface. This bond can only be coordinative. Examples of such compounds are, for example, silanes having at least one acrylate or methacylate group or an epoxide group.
  • the photosensitive material is preferably exposed in what is known as the "dip-in" conformation same side of the substrate as the lens for exposure.
  • the lens is additionally immersed in a drop of the photosensitive material.
  • the photosensitive material and the objective have the same refractive index.
  • the refractive index of the substrate is different.
  • the refractive index of the photosensitive material must match the objective.
  • an autofocus effect of the system can be used. This takes place by a reflection dependent pattern the substrate surface and thus enabling the light ⁇ attaching the structure to the substrate. Without this function, variations in the vertical positioning of the laser within the monomer are possible, which can lead to a loss of the structures in the development step.
  • the surface is found where there is a relatively large difference in the refractive indices, that is usually between one optically thinner to a visually denser material. For interference with only one laser, the dip-in method is preferred.
  • the inventive method chu ⁇ lenförmige or elongated protrusions may be formed on the substrate, for example. These can be arranged arbitrarily. Due to the interference, these structures preferably have structural features in a vertical direction with an extent of less than 400 nm, in particular less than 300 nm, very particularly less than 200 nm.
  • a structural feature may be, for example, the vertical extent of an ellipsoidal disk or the vertical extent of a corresponding projection or a freely suspended, fixed on at least one side element. Such elements are possible because the polymerization takes place within the photoresist and can be triggered there highly selectively.
  • the structures may be arranged periodically or not periodically. Because each structural feature is separated by a separate
  • the arrangement of the structures on the substrate in the lateral and vertical directions can be varied.
  • the structures can also be arranged randomly.
  • the structure comprises at least one freestanding structural feature. This is understood to mean a structural feature which bridges at least two structures arranged on the surface, ie, in particular, has no vertical connection to the surface. So there is a cavity below the freestanding structure.
  • the freestanding structures can form the structure of a lattice or of one or more fissured structures by bridging a plurality of columnar structures on the surface.
  • a substantially angle-independent structural color is achieved, which is determined prior al ⁇ lem through the vertical arrangement. This can be achieved, for example, by creating a vertically ordered structure. This determines the wavelength , which is mainly reflected by the structure. This respectively ordered in the vertical direction, or periodi ⁇ cal structure is then not periodically arranged on the surface. By this arrangement, the Bragg reflection, which can cover the color impression of the entire structure, can be suppressed.
  • the structures can be further treated.
  • absorbent metal or ink layers it is possible for absorbent metal or ink layers to be deposited on the structures.
  • FIG. 5 Schematic representation of a manufactured sample
  • FIG. 8 Schematic representation of a manufactured sample
  • Fig. 10 A sensor manufactured according to the invention.
  • FIG. 15 Schematic representation of an intensity distribution by self-interference
  • Simulationssoft- served would be that simulates the modulation of the laser as a function of genutz ⁇ th substrate, the photoresist, the lens and the positi ⁇ on the focal point in the photoresist.
  • the development of the writing process was carried out as follows: The Sub ⁇ strate with the exposed photoresist was developed in the developer (PEHEMA) for 20 min. Unlike the common ones
  • this step was modified. This increases the quality and shape of the final structures.
  • most of the developer was removed without drying the sample, with simultaneous addition of isopropanol. This process was repeated twice every other 10 minutes. Thereupon followed a further exposure of the sample, still within the liquid ⁇ speed with a UV lamp for 300 s at 7.3 W / cm 2 under N 2 . The sample was again kept in a very pure isopropanol for purification and dried under the hood at room temperature.
  • a similar process can be used to create structures for
  • the sample is air-dried with isopropanol after the last washing step, with UV light
  • treated silicon wafers were used to improve the adhesion of the
  • Diameter of the structural features are controlled. Furthermore, the surface produced using pattern 1 was used to make a
  • the procedure can be Adhesive coating, production of the negative mold, and producing the positive mold with another material (Figure 7 right).
  • the surface stereolithogra ⁇ phisch prepared with oxygen plasma for 1 min was activated, and then after rinsing with nitrogen for 30 min in the presence of 20 ⁇ 1 anti-adhesive silane, Trichlorfluorsilan (tridecanol cafluor-1, 1,2, 2-tetrahydrooctyl trichlorosilane, AB111444, but GMBH) in a desiccator. This was followed by a baking step at 95 ° C for 45 min.
  • the lithography structure (master strueture) is obtained.
  • Figure 2 shows examples of the invention prepared according to structural ⁇ structures with 9 structural features in the vertical direction.
  • Figure 3 shows the present invention to structures produced on un ⁇ teretzlichen substrates. Glass (a), NiTi (b), Si (c), AuPd thick (thick, d), Au thick (thick, e), Au thin (thin, f). For Glass and NiTi was struc ⁇ riert without pretreatment of the surface. The other metallic layers were applied to a glass surface.
  • FIG. 11 shows fabricated structures after exposure according to pattern No. 2 (FIG. 5).
  • Figure 16 shows structures created on a substrate with a single write process, each with multiple pulses.
  • the vertical structure could be affected (mittle ⁇ re view) by varying the power and / or wavelength. This affects the reflected wave ⁇ length of the absorbent structure (lower figures), WEL surface consists of many of these columnar structures.
  • a combination of patterns 1 and 3 at 13 mW was used to make fence-like ⁇ structures.
  • 5 layers were spaced 300 nm apart, and for pattern 1, a 300 nm and 1200 nm layer was used for the vertical exposure.
  • the resulting structures are similar in shape to a fence, with pattern 3 serving as anchor points for the linear pattern 1.
  • this combination it is accordingly mög ⁇ Lich a layer system to establish a periodic sequence of material and air, or to structure free hanging units of less than 50 nm or 45 nm.
  • the free spaces can now be filled with any other material, which offers great potential for applications in new laser and sensor technologies.
  • FIGS. 13, 14 show recordings of produced structures.
  • the fence-like structure is clearly visible.
  • the two columns are connected only by a thin freestanding structure, with a minimum extension in the vertical and horizontal directions of 45 nm.
  • FIG. 10 shows the color change for a structure according to FIG. 9 for the detection of isopropanol. For this, a drop of isopropanol was added to the sample outside the Ge ⁇ visual field, which spreads and then slowly dries. A color change is already visible before the front of the drop the field reached. After evaporation of the isopropanol, the color change disappears again.
  • FIG. 12 shows the TEM image of a manufactured columnar structure with vertical structuring.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un procédé de fabrication de microstructures, selon lequel une matière photosensible est déposée sur un substrat et un laser est focalisé dans au moins une zone de la matière de façon telle que dans cette zone ou ces zones la matière photosensible soit activée par absorption multiphotonique, le laser se réfléchissant sur une surface de réflexion et étant modulé par interférence avec lui-même dans ladite ou lesdites zones.
PCT/EP2017/082807 2016-12-23 2017-12-14 Procédé de fabrication de microstructures Ceased WO2018114590A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016125690.0 2016-12-23
DE102016125690.0A DE102016125690A1 (de) 2016-12-23 2016-12-23 Verfahren zur Herstellung von Mikrostrukturen

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WO2018114590A1 true WO2018114590A1 (fr) 2018-06-28

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WO (1) WO2018114590A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113134971A (zh) * 2021-04-26 2021-07-20 长春理工大学 仿生鲨鱼皮结构的制造系统和制造方法
WO2021253978A1 (fr) * 2020-06-15 2021-12-23 河南大学 Procédé de construction de micro/nanostructure 3d

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020115042B4 (de) 2020-06-05 2023-12-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren und photosensitives Material zum Herstellen einer elektrisch leitenden Vorrichtung
DE102021116036A1 (de) 2021-06-21 2022-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren und System zum Herstellen einer metallischen Struktur

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WO2003010601A1 (fr) * 2001-07-23 2003-02-06 Applied Materials, Inc. Procede de preparation de photomasques a performance elevee a image optique
EP2752895A1 (fr) * 2011-08-31 2014-07-09 Asahi Kasei E-Materials Corporation Substrat optique et élément électroluminescent semi-conducteur

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WO2007112309A2 (fr) * 2006-03-24 2007-10-04 3M Innovative Properties Company Procédé de fabrication de micro-aiguilles, réseaux de micro-aiguilles, matrices, et outils de reproduction
WO2015010206A1 (fr) * 2013-07-22 2015-01-29 Kumar Kitty Traitement interférométrique au laser

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WO2003010601A1 (fr) * 2001-07-23 2003-02-06 Applied Materials, Inc. Procede de preparation de photomasques a performance elevee a image optique
EP2752895A1 (fr) * 2011-08-31 2014-07-09 Asahi Kasei E-Materials Corporation Substrat optique et élément électroluminescent semi-conducteur

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BUTT ET AL., ADV. OPTICAL MATER, vol. 4, 2016, pages 497 - 504
JEON ET AL., SMALL, vol. 10, no. 8, 2014, pages 1490 - 1494
SIDDIQUE ET AL., OPTICAL MATERIALS EXPRESS, vol. 5, 2 May 2015 (2015-05-02), pages 5

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021253978A1 (fr) * 2020-06-15 2021-12-23 河南大学 Procédé de construction de micro/nanostructure 3d
CN113134971A (zh) * 2021-04-26 2021-07-20 长春理工大学 仿生鲨鱼皮结构的制造系统和制造方法

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