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WO2018109060A1 - Élément structurel comprenant un composant optoélectronique - Google Patents

Élément structurel comprenant un composant optoélectronique Download PDF

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Publication number
WO2018109060A1
WO2018109060A1 PCT/EP2017/082757 EP2017082757W WO2018109060A1 WO 2018109060 A1 WO2018109060 A1 WO 2018109060A1 EP 2017082757 W EP2017082757 W EP 2017082757W WO 2018109060 A1 WO2018109060 A1 WO 2018109060A1
Authority
WO
WIPO (PCT)
Prior art keywords
component
conversion layer
layer
conversion
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2017/082757
Other languages
German (de)
English (en)
Inventor
Ivar Tangring
Rebecca ROEMER
Elena RACHKOVA
Sandra Sobczyk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2018109060A1 publication Critical patent/WO2018109060A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

Definitions

  • the invention relates to a component with an optoelectronic component, to a method for producing a component and to a method for producing a component.
  • the object of the invention is to create a component prepared ⁇ which has lower optical losses.
  • the object of the invention is to create a simple method for producing a component and a component prepared ⁇ .
  • An advantage of the component described is that radiation losses of the radiation which is emitted via a lower side of the component are reduced.
  • a first conversion layer is vorgese ⁇ hen between the optoelectronic component and the support.
  • the first conversion layer changes the output ⁇ wavelength of the radiation.
  • the radiation with the changed wavelength undergoes lower radiation losses in the case of reflection on a carrier and in the component.
  • a component is provided with an optoelectronic component, wherein the component is designed to generate an electromagnetic radiation.
  • the device is adapted to ERS radiation over an emission give ⁇ .
  • the device has an underside over which a part of the radiation is emitted.
  • the device is arranged on a support.
  • a first conversion layer with a first conversion material is arranged between the carrier and the component.
  • the first conversion ⁇ layer absorbs the radiation of the component with the output wavelength and is a 29o ⁇ surrounded in the wavelength of radiation having a first wavelength from. The first wavelength is greater than the output wavelength.
  • the first conversion layer between the component and the substrate applies less electromagnetic radiation of the component with the unchanged Trustwel ⁇ lenin on the support meet.
  • Supports with, for example, a silver layer have a reflectivity which likewise increases with increasing wavelength.
  • Strahlungsverlus ⁇ te be reduced in the reflection on the carrier characterized in that at least part of the radiation before impinging on the carrier in the wavelength is postponed to a longer wavelength.
  • the first conversion layer emits at least a portion of the absorbed and wavelength-shifted radiation back towards the device. This part can be up to 50% of the emitted radiation, which does not hit the carrier or a mirror. This also reduces radiation losses.
  • a second conversion layer is arranged above the component.
  • the second Konversi ⁇ onsmaterial absorbs the radiation of the component with the output wavelength and emits a radiation having a second wavelength.
  • the first wavelength is greater than the second wavelength.
  • the arrangement described is particularly suitable for construction ⁇ elements that emit blue light.
  • the first Konversi ⁇ ons slaughter may be formed, for example, to move the blue light in the wavelength to red light.
  • the second conversion layer can be formed to electro ⁇ magnetic radiation, in particular blue light, to move in the Wel ⁇ lenide to green light.
  • white light can be generated ⁇ SLI.
  • the electromagnetic radiation having the first wavelength can be irradiated without substantial absorption by the second conversion layer.
  • the first conversion layer has a thickness that is less than 20 ym. In this way, a good thermal coupling between the underside of the device and the carrier is achieved.
  • the first Konversi ⁇ ons Mrs may also be formed thinner than 20 ym to achieve a better thermal coupling.
  • the first conversion layer may be thinner than 15 ym or twisted ⁇ ner than 10 ym, and in particular thinner than 5ym.
  • a ge ⁇ certain minimum thickness, for example 1 ym or 3YM may be for the stability of the first conversion layer is advantageous. With the same phosphor and with the same particle size, the thinner the first conversion layer is formed, the lower the proportion of the radiation which is shifted in the first conversion layer to the second wavelength. Depending ⁇ but increases the thermal contact between the component and the carrier with decrease in the thickness of the first conversion ⁇ layer.
  • the first conversion layer has first conversion particles which have a size, in particular a mean size, which ner than 10 ym.
  • the first conversion particles may be less than 5 ym, in particular the mean size of the first conversion Parti ⁇ cle may be less than 5 ym.
  • the small particle size makes it possible to produce a thin first conversion layer with a high packing density.
  • ⁇ ßere in the use of small particles and converting the same volume or weight fraction, a higher reflectivity.
  • the diffuse reflectivity is thus increased by the greater scattering on the larger number of small conversion particles.
  • the high reflectivity is advantageous since reflection of the radiation on the carrier is avoided in the case of reflection in the first conversion layer. Upon reflection on the carrier, further radiation losses may occur.
  • the first conversion layer comprises a matrix material and first conversion particles.
  • the conversion particles have at least 50% of the volume of the first conversion layer, depending on the selected embodiment. Depending on the embodiment chosen, the conversion particles may represent at least 70% of the volume of the first conversion layer. Due to the high packing density, a high thermal conductivity is achieved. The high thermal conductivity is good for a good heat dissipation to the carrier. The conversion particles have a higher thermal conductivity than the Matrixma ⁇ TERIAL. In this respect, it is desirable to introduce as much conversion material as possible into the first conversion layer, since this increases the thermal conductivity of the first conversion layer.
  • the matrix material of the first conversion layer has an optical refractive index which is less than 1.45.
  • an increased degree of reflection is achieved for the radiation during a transition between the component and the first conversion layer.
  • the adhesive layer can beispielswei ⁇ se made of silicone.
  • the adhesive layer has an optical refractive index that is less than 1.45. As a result, an increased reflectance can be achieved.
  • a mirror layer is arranged on the carrier.
  • the mirror layer increases the degree of reflection of the radiation back in the direction of the component and thus back in the direction of the emission surface of the component.
  • the mirror layer may comprise metal, in particular silver or consist of metal and in particular consist of silver.
  • the first conversion layer is also arranged laterally next to the component on the carrier.
  • electromagnetic radiation which is directed laterally from the component in the direction of the carrier, shifted in wavelength.
  • this also increases the reflectance on the carrier.
  • the second conversion layer is arranged ⁇ laterally of the component on the carrier. This can also emitted laterally from the component radiation in the wavelength to the second wavelength strigo ⁇ ben. This achieves a more homogeneous distribution of the same wavelength distribution over an enlarged radiating surface, which encompasses the component and the carrier.
  • a further first conversion layer between the radiating surface of the building ⁇ element and the second conversion layer may be arranged.
  • a desired wavelength shift toward the first wavelength can be achieved.
  • the first conversion layer can be formed with a small thickness. Even the low thickness ensures Zvi ⁇ rule the component and the support for a good thermal coupling.
  • the construction of the first conversion layer can be restricted solely to the function of reducing the radiation losses of Strah ⁇ development that is blasted down to the support and back to the device in this way.
  • the desired waves ⁇ length distribution can be adjusted with the further first conversion layer.
  • the thickness of the first conversion layer and the packing thickness of the scattering particles of the first conversion layer can be optimized for the reduction of the radiation losses and / or the thermal conductivity.
  • the second conversion layer can also have first conversion particles.
  • a shift of the wavelength of a portion of the electromagnetic radiation in the first wavelength can also be achieved by means of the second conversion layer.
  • This feature is also adapted to form the first Konversi ⁇ ons slaughter thin, so that a good thermal Kopp ⁇ lung is present between the component and the support.
  • the first and / or the second conversion layer have conversion particles with different emission wavelengths.
  • the first and / or the second conversion layer can have different conversion particles , which essentially emit light of the same color but with different wavelengths.
  • the first and second conversion layer may have different convergence ⁇ sion particle, the different colored light such as red light, green light and / or yellow light emittie ⁇ ren.
  • the first and / or the second conversion ⁇ layer can be up to five different Conversion particles sen, wherein the different conversion particles emit radiation, in particular light with different wavelengths.
  • the various conversion particles can emit five different wavelengths of light, ie in particular five different colors, such as red light, green light and / or yellow light.
  • a component with an optoelectronic component the device being adapted to generate electromagnetic radiation having an output wavelength
  • the device is adapted to deliver the radiation on a radiation surface
  • a carrier is provided with a frame, wherein the frame surrounds a receiving space
  • the component is arranged in the receiving ⁇ space on the support in such a way that a first conversion layer between an underside of the ⁇ construction and ⁇ the carrier is arranged wherein the component is formed from ⁇ to deliver a portion of the radiation over the bottom, wherein the first conversion layer at least partially absorbs the radiation of the component and emits at ei ⁇ ner first wavelength, wherein the first wavelength is greater than the output wavelength, wherein in the Recordin ⁇ mera in order to fill a liquid matrix material with second conversion particles, during a settling process the second conversion particles settle on the component and form a second conversion layer.
  • a simple and inexpensive method for producing a component is proposed, wherein a wafer having a semiconductor layer structure for generating electromagnetic radiation is provided, wherein predetermined breaking points are introduced into the wafer with laser beams, wherein a first conversion layer is sprayed onto one side of the wafer is, and after curing of the first conversion layer, the wafer is divided into individual components based on the predetermined breaking points.
  • FIG. 1 shows a cross section through a first embodiment of a component
  • Fig. 1 shows a cross section through a schematic Dar ⁇ position of a component 1 comprising a carrier 2.
  • An optoelectronic component 3 is arranged on the carrier 2.
  • the optoelectronic component 3 is designed to generate electromagnetic radiation, in particular visible light.
  • the optoelectronic component 3 may be formed, for example, as a semiconductor chip in the form of a laser diode or a light emitting diode.
  • the optoelectronic component 3 can have an active zone with a pn
  • the optoelectronic component 3 can be formed out to produce blue light.
  • the carrier 2 may be formed, for example, in the form of a printed circuit board.
  • the carrier 2 may also be made of other materials, in particular of a film, a ceramic, a plastic, egg nem mold material, a sapphire or silicon or comprise at least one of said materials.
  • the carrier 2 may also be formed of metal, in particular from a metal ⁇ metallic leadframe section.
  • the carrier 2 may consist in particular of copper.
  • the component 3 is designed to be electromagnetic
  • the Ab ⁇ jet surface 5 is arranged opposite to the support 2 in the illustrated embodiment.
  • the component 3 has the active region for generating the radiation in an upper region which is adjacent, for example, directly to the Obersei ⁇ te 16 of the component. 3 As a result, the majority of the radiation is emitted via the upper side 16. Furthermore, the component 3 is designed to deliver a portion of the radiation 4 laterally and downwardly in the direction of the carrier 2. This situation is shown schematically in the form of arrows in the figure.
  • the device 3 may comprise a semiconductor ⁇ layer, examples on a transparent substrate is arranged play of sapphire. Thus can be a light-emitting sapphire chip that Bauele ⁇ ment. 3
  • the component 3 has electrical contacts 6, 7 on an upper side 16, which forms the emission surface 5.
  • the electrical contacts 6,7 are connected to electrical lines 8, 9.
  • the electrical lines 8, 9 are provided in order to apply an electrical voltage via the electrical contacts 6, 7 to the component 3, in particular to the active zone with the pn layer.
  • the illustrated electrical contact is only an example. Instead of the arrangement of the electrical contacts 6, 7 on the radiating surface 5, the electrical contacts 6, 7 may also be provided on an underside 10 of the component 3 or on side surfaces of the component 3.
  • solder balls or electrical conductor tracks can be provided instead of the illustrated bonding wires as electrical lines.
  • a flip-chip assembly may be provided at the component 3 with the emitting surface 5 is mounted on the carrier 2.
  • the first conversion ⁇ layer 11 has first conversion material, the forming being ⁇ in order to emit the electromagnetic radiation of Bauele ⁇ member 3, having an output wavelength to absorbie ⁇ ren and having a first wavelength.
  • the first wavelength is greater than the output wavelength.
  • the first conversion layer 11 is arranged on an underside 10 of the component 3 ⁇ .
  • the component 3 may, for example, have a rectangular or square base surface and thus a rectangular or square bottom 10.
  • the adhesive layer 13 may for example comprise silicone or consist of silicone. Depending on the selected embodiment 13 has the adhesive layer to a low refractive index insbeson ⁇ particular is less than 1.45. Depending on the selected embodiment, the adhesive layer 13 may have a layer thickness of, for example, 0.5 .mu.m to 1 .mu.m. The adhesive layer 13 can also be made thicker, but a small thickness of the adhesive layer 13 is preferred. The adhesive layer 13 is formed so thick that long-term stable buildin ⁇ account the component is achieved in the carrier 2. 3 Depending on the chosen embodiment, the first
  • Conversion layer 11 may also be arranged directly on the support 2 and the adhesive layer 13 between the first conversion ⁇ layer 11 and the bottom 10 of the device 3 angeord ⁇ net be. In addition, can also be dispensed onto the adhesive layer 13, wherein the component 3 ⁇ layer over the first conversion 11 is connected with the carrier. 2
  • the first conversion layer 11 has for example a di ⁇ bridge, which is thinner than 20 ym, and in particular thinner than 10 ym.
  • the first conversion layer 11 may comprise a matrix material and conversion particles.
  • the matrix material may be a silicone.
  • the first conversion layer 11 is made as thin as possible.
  • the first conversion layer 11 has a high thermal conductivity ⁇ ness. The thermal conductivity can be improved such that the particles are present at a high conversion Pa ⁇ packing density in the first conversion layer. 11
  • the conversion particles may more than
  • An upper side 14 of the carrier 2 may have a mirror layer 15.
  • the mirror layer 15 may for example comprise metal, in particular consist of metal.
  • the mirror layer 15 may comprise silver, in particular consist of silver.
  • the mirror layer can have a reflectivity which is greater for electromagnetic radiation having a longer wavelength than for a shorter one
  • the mirror layer 15 may reflect blue light less than red light.
  • a second conversion ⁇ layer 12 is provided on the upper side 16 of the component 3, which is arranged opposite to the carrier 2, a second conversion ⁇ layer 12 is provided.
  • the second conversion layer 12 may be arranged directly on the upper side 16 of the component 3.
  • additional layers may also be provided between the upper side 16 of the component 3 and the second conversion layer 12.
  • the second conversion layer 12 has a second Konversi ⁇ onsmaterial.
  • the second conversion material is det to absorb the radiation 4 of the device 3 and emit at a second wavelength.
  • the second Wel ⁇ lenmother is greater than the first wavelength emitted from the first conversion layer 11 radiation.
  • the second wavelength may be in the green visible range.
  • the first wavelength may be in the red sichtba ⁇ ren area. This embodiment is particularly advantageous when the component 1 is to deliver a total of white light.
  • the second conversion layer 12 may also comprise a matrix material and second conversion particles.
  • a further second conversion layer 20 also be arranged laterally next to the Bauele ⁇ element 3 on the top 14 of the carrier.
  • the further second conversion layer 20 may consist of the moving ⁇ chen material as the second conversion layer 12th
  • the arrangement, in particular the second Konversi ⁇ ons slaughter 12 may as illustrated, a transparent cover layer 17 cover ⁇ .
  • the cover layer 17 can also be dispensed with.
  • the second conversion layer 12 can be dispensed with.
  • the electromagnetic radiation of the component 3, which has the output wavelength and is radiated in the direction of the carrier 2 can, in various ways scattered Bezie ⁇ hung, be reflected. Part of the radiation can be reflected back by a total reflection at the interface between the lower side 10 of the component 3 and the first conversion layer 11.
  • the reflected back radiation with the output wavelength has a high probability ⁇ probability that the radiation in the active zone of the device 3 is absorbed again.
  • the radiation 4 having the output wavelength has a higher probability of being absorbed at the electrical contacts 6, 7, as compared to radiation having a longer wavelength. This is especially true for blue light generated by the device 3.
  • a further mirror layer for example in the form of a dielectric layer structure or a semiconductor layer structure, may be provided on the underside 10 of the component 3. However, this additional mirror layer can also be dispensed with.
  • the proportion of the radiation that is at the interface between the first conversion layer 11 and the bottom 10 of the component 3 can be increased by the fact that the first Kon ⁇ version layer has a high refractive index.
  • the matrix material of the first conversion layer have a high refractive index which is about 1.45. As a result, an emission of the light output via the emission surface 5 is improved.
  • a further portion of the radiation 4, which penetrates into the first conversion layer 11 is absorbed in the first conversion ⁇ layer 11 and re-emitted at the first wavelength.
  • the emission of the electromagnetic radiation with the first wavelength is approximately 50% in the direction of the emission surface 5.
  • the other 50% of the radiation having the first wavelength are emitted in the direction of the carrier 2.
  • the adhesive layer 13 which has a low refractive index, which is in the direction of the
  • Carrier 2 emitted radiation at the interface between the first conversion layer 11 and the adhesive layer 13 in Rich ⁇ tion on the emission surface 5 backscattered. Also by the proportion of the radiation is reduced, in fact, the mirror layer of Trä ⁇ gers 2 impinges on the support 2 and 15 °.
  • the proportion of the electromagnetic radiation which impinges on the carrier 2 or on the mirror layer 15 of the carrier 2 is due to the first conversion ⁇ layer 11 only to a certain extent from the radiation with the output wavelength and additionally from a share of the electromagnetic Radiation of the first wavelength.
  • the higher the proportion of the radiation having the first wavelength the higher will be the reflectance at the mirror layer 15. This is especially true when the mirror ⁇ layer 15 has silver or consisting of silver, and the first wavelength is longer than the output wavelength of the radiation of the component 3. Silver has a higher re flektrios for longer wavelengths.
  • the proportion 11 15 reflected by the arrangement of the first conversion layer between the lower surface of the component 3 and the mirror layer of the mirror layer 15 in the direction of the jet area From ⁇ 5 back electromagnetic
  • FIG. 2 shows a schematic cross section through a further embodiment of a component 1, which is formed substantially in accordance with the embodiment of FIG. 1.
  • the second conversion layer 12 and / or the further second conversion layer 20 additionally comprise first conversion material, for example in the form of first conversion particles 18.
  • Fig. 3 shows a cross section through a further exporting ⁇ approximate shape of a component 1, which is constructed substantially in accordance with the embodiment of Fig. 1, but in this embodiment is additionally provided between the support 2 and the second conversion layer 12, another first convergence ⁇ immersion layer 19 is arranged.
  • the further first conversion layer 19 which is arranged laterally next to the component 3 on the support 2, a thickness which is greater than the thickness of the first Kon ⁇ version layer 11, which is disposed under the component 3 ,
  • the further first conversion layer 19 thus extends to side surfaces of the component 3.
  • the other second conversion layers 20, which are arranged laterally next to the component 3, extend in the dargestell ⁇ th embodiment except for a top 16 of the component 3.
  • the further first conversion layer 19 and the additional first conversion layer 21 may be formed of the same material as the first conversion layer ⁇ . 11
  • the further first Kon ⁇ version layer 19 or the additional first Kon ⁇ version layer 21 in front of the other second conversion ⁇ layer 20 or in front of the second conversion layer 12 is arranged in the emission direction of the component 1, an absorption of the radiation having the first wavelength in the second Conversion layer 12 be ⁇ tion as reduced in the other second conversion layer 20, in particular avoided.
  • the second conversion layer 12 are formed in the manner of ⁇ that the electromagnetic radiation of the ers ⁇ th wavelength is hardly or not absorbed. In this way it is easier to actually from ⁇ blasted wavelength distribution gen from the component 1 by the Schichtanordnun- set.
  • an adhesive layer 13 for fastening the first conversion layer 11 to the component 3 on the carrier 2 can also be provided in the embodiments of FIGS. 2 and 3.
  • the adhesive layer 13 may also be arranged between the first conversion layer 11 and the component 3.
  • the following phosphors may e.g. are used for the conversion layers, in particular the conversion particles, the listing not being conclusive:
  • Ratio of 1 1, the compensation for charge compensation e.g. by a simultaneous exchange of N by O or by Ca, Sr by Li can take place)
  • M2 (Si, Al) 5 (N, O) 8 : Eu2 + with M Ca, Sr, Ba (alone or in combination))
  • Nitridoorthosilicates M 2 - x Lu x Si0 4 - x N x : Eu 2+ with M Ba, Sr, Ca, Mg (alone or in combination) 12. KSF and related phosphors: K 2 SiF 6 : Mn 4+ and (K, Na) 2 (Si, Ti) F 6 : Mn 4+
  • FIGS. 4 to 7 show method steps for the production of a component 1 comprising a support 2 in the form of a metalli ⁇ rule lead frame portion.
  • a second carrier 22 is also provided in the form of a further metallic conductor frame section.
  • the carrier 2 and the second carrier 22 are embedded in a molding material 23 and form a support structure.
  • the molding material 23 is made of an electrically insulating material, for example Epoxyma- material or silicone.
  • the mold material 23 mechanically connects the first and the second carrier 2, 22.
  • Mold material 23 has a peripheral frame 24, which surrounds a receiving space 25.
  • a component 3 is arranged.
  • the component 3 is designed in accordance with the component 3 of FIG.
  • the component 3 has on the upper side 16 a first and a second electrical contact 6, 7.
  • a first conversion layer 11 is arranged ⁇ .
  • an adhesive layer 13 may be provided.
  • the support 2 can have an upper surface 14 a mirror layer 15 on ⁇ .
  • the mirror layer 15 can, as already stated for FIG. 1, have metal or be formed from metal.
  • the mirror layer 15 may comprise silver or be formed in particular from silver.
  • the carrier 2, the first conversion layer 11 and the component 3 may be formed according to the described embodiments of FIG.
  • the receiving space 25 may have a rectangular or square base.
  • the bonding wires as the first and second electrical leads 8, 9 with the electrical contacts ⁇ rule 6,7 and the support 2 and the second support 22 are electrically conductively connected.
  • the carrier 2 and the second carrier 22 are designed as Lei ⁇ terrahmenabête and thus from a
  • a flüssi ⁇ ges matrix material is filled 28 with the second conversion particles 34 in the receiving space 25 .
  • a first conversion material can also be contained in the matrix material.
  • the matrix material may be, for example, liquid silicone.
  • the second conversion particles 34 settle with time and thus form the second conversion layer 12 shown in FIG. 1 on the upper side of the component 3 and the further second conversion layer 20 on the support 2 and the second support 22 next to the component 3.
  • the matrix material 28 without saving ⁇ second conversion Tikel 34 or low concentration of the second conversion particles 34 forms the top layer 17. This process step is shown in Fig. 7. In this way, an arrangement according to FIG. 1 can be obtained.
  • FIGS. 8 to 10 show method steps for a simple production of a component 3 with a first conversion layer 11.
  • FIG. 8 shows a wafer 29 which has already been thinned, moreover electrical contacts 6, 7 on one side of the wafer 29 are arranged.
  • the wafer may constitute a sapphire wafer having a semiconductor layer structure with an active zone for generating electromagnetic radiation.
  • the contacts 6,7 are connected to the p-side and to the n-side of the pn structure of the active zone.
  • the semiconductor layer structure can be a light-emitting diode odentechnik, for example, based on a GaN or InGaN material system.
  • predetermined breaking points 31 are introduced into the wafer 29 by means of laser beams 30.
  • a first conversion ⁇ layer on a second side 32 of the wafer 29th The conversion layer 11 can be applied at ⁇ example, with a spray process.
  • the first conversion layer 11 can for example have as Matrixma ⁇ TERIAL silicone, are embedded in the first conversion particle.
  • an adhesive layer depending on the chosen embodiment can be applied to the first Konversi ⁇ ons slaughter 11. 13
  • the adhesive layer 13 can, as already explained to Fig. 1, are made of silicone and have ei ⁇ NEN low refractive index. The refractive index may be below 1.45, for example.
  • the adhesive layer 13 is transparent in this embodiment

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Abstract

L'invention concerne un élément structurel comprenant un composant optoélectronique. Le composant est conçu pour générer un rayonnement électromagnétique ayant une longueur d'onde de départ. Le composant est conçu pour émettre le rayonnement par le biais d'une surface de rayonnement. Le composant est conçu pour émettre une partie du rayonnement par le biais d'une face inférieure. Un support est prévu. Une première couche de conversion est prévue. La première couche de conversion est disposée entre la face inférieure du composant et le support. La première couche de conversion absorbe au moins partiellement le rayonnement du composant et émet à une première longueur d'onde. La première longueur d'onde est supérieure à la longueur d'onde de départ.
PCT/EP2017/082757 2016-12-15 2017-12-14 Élément structurel comprenant un composant optoélectronique Ceased WO2018109060A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016124526.7 2016-12-15
DE102016124526.7A DE102016124526A1 (de) 2016-12-15 2016-12-15 Bauteil mit einem optoelektronischen Bauelement

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WO2018109060A1 true WO2018109060A1 (fr) 2018-06-21

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EP2339656A2 (fr) * 2009-12-22 2011-06-29 Kabushiki Kaisha Toshiba Dispositif électroluminescent
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WO2014173590A1 (fr) * 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Procédé de fabrication d'une puce de semi-conducteur optoélectronique et puce de semi-conducteur optoélectronique

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