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WO2018176267A1 - Procédé de fabrication d'un absorbeur parfait - Google Patents

Procédé de fabrication d'un absorbeur parfait Download PDF

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Publication number
WO2018176267A1
WO2018176267A1 PCT/CN2017/078599 CN2017078599W WO2018176267A1 WO 2018176267 A1 WO2018176267 A1 WO 2018176267A1 CN 2017078599 W CN2017078599 W CN 2017078599W WO 2018176267 A1 WO2018176267 A1 WO 2018176267A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal layer
perfect
manufacturing
electron beam
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/078599
Other languages
English (en)
Chinese (zh)
Inventor
张昭宇
韩谞
何克波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chinese University of Hong Kong Shenzhen
Original Assignee
Chinese University of Hong Kong Shenzhen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chinese University of Hong Kong Shenzhen filed Critical Chinese University of Hong Kong Shenzhen
Priority to PCT/CN2017/078599 priority Critical patent/WO2018176267A1/fr
Priority to CN201780000177.3A priority patent/CN107114006B/zh
Publication of WO2018176267A1 publication Critical patent/WO2018176267A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073—Shielding materials
    • H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
    • H05K9/0088—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a plurality of shielding layers; combining different shielding material structure

Definitions

  • the invention belongs to the technical field of electromagnetic wave absorption structures, and particularly relates to a method for manufacturing a perfect absorber.
  • An electromagnetic wave absorbing structure based on synthetic materials whose electromagnetic wave parameters and electromagnetic parameters of the surrounding environment can achieve impedance matching, and the absorption rate at a specific wavelength band is 100%, so that the electromagnetic wave absorbing structure is called perfect Absorber.
  • EBL electron beam direct writing
  • a metal cylinder is required, and the EBL photoresist is subjected to round hole exposure and development to form a circular hole of the same size as the metal cylinder, and then metal is deposited into the round hole by vapor deposition, and lifted. -off, finally remove the glue and glue, and finally form the structure of the perfect absorber.
  • This method has the problem of difficulty in peeling and distortion of the metal pattern after peeling.
  • Fig. 2 After the processing shown in Fig. 1.
  • 1 is a first metal layer 2, a dielectric layer 3, and a photoresist 5 stacked in this order on the surface of the substrate layer 1.
  • the second metal layer 4 is vapor-deposited. If the metal melting point of the second metal layer 4 is high, surface distortion of the second metal layer 4 as shown in FIG. 2 may be formed, as shown in FIG.
  • the surface distortion may be too severe, and the thickness of the second metal layer 4 may be thinner, which may not meet the process requirements of the perfect absorber.
  • the metal temperature of the second metal layer 4 is not particularly high, the photoresist layer is not melted, and the second metal layer 4 completely covers the photoresist layer 5, so that the photoresist cannot be peeled off, as shown in FIG. 4;
  • the metal melting point of the second metal layer 4 is high, and the vapor deposition between the crucibles reaches the required enthalpy, the photoresist layer 5 not only collapses into a hilly shape, but also cannot be peeled off, as shown in FIG.
  • the metal material of the perfect absorber is tungsten germanium
  • the melting point of tungsten is the highest in the metal
  • the temperature of the film is extremely high during the evaporation process, and the high temperature destroys the pattern that the EBL photoresist has generated, and utilizes Sputtered
  • the deposited film is not suitable for the stripping process. Therefore, it is necessary to propose a new method of manufacturing a perfect absorber.
  • the present invention provides a perfect absorber for the problems of peeling difficulties and metal pattern distortion which occur in the manufacturing process of a perfect absorber, and the use of tungsten as a metal to have a too high melting point to destroy the electron beam direct writing photoresist pattern. Manufacturing method.
  • a method for manufacturing a perfect absorber includes at least the following steps:
  • the method for manufacturing a perfect absorber provided by the present invention because the electron beam direct writing technology is not used, avoids the destruction of the photoresist by the deposited film after patterning by the electron beam direct writing technology, and eliminates the pattern distortion phenomenon of the metal array after peeling off. , provides a new method for the manufacture of perfect absorbers.
  • FIG. 1 is a semi-finished product of a perfect absorber structure of an unvaporized metal layer produced by a conventional manufacturing method
  • FIG. 2 is a perfect absorbent structure made by a conventional manufacturing method
  • FIG. 3 is another perfect absorber structure manufactured by a conventional manufacturing method
  • FIG. 4 is still another perfect absorber structure manufactured by a conventional manufacturing method
  • FIG. 5 is a further perfect absorber structure manufactured by a conventional manufacturing method
  • FIG. 6 is a flow chart of a method for manufacturing a perfect absorber according to an embodiment of the present invention.
  • FIG. 7 is a schematic view showing the first step of manufacturing a perfect absorber according to an embodiment of the present invention.
  • FIG. 8 is a schematic view showing the second step of manufacturing a perfect absorber according to an embodiment of the present invention.
  • FIG. 9 is a schematic view showing the third step of manufacturing a perfect absorber according to an embodiment of the present invention. [0022] FIG.
  • FIG. 10 is a schematic view showing the fourth step of manufacturing a perfect absorber according to an embodiment of the present invention.
  • FIG. 11 is a schematic view showing a seventh step of manufacturing a perfect absorber according to an embodiment of the present invention.
  • FIG. 12 is a perspective view of a perfect absorbent body manufactured by the method for manufacturing a perfect absorbent body according to an embodiment of the present invention.
  • FIG. 13 is a plan view of a perfect absorber manufactured by the method for manufacturing a perfect absorbent body according to an embodiment of the present invention.
  • an embodiment of the present invention provides a method of manufacturing a perfect absorber.
  • the method for manufacturing the perfect absorbent body comprises at least the following steps:
  • the substrate 1 is any one of quartz, silicon wafer, nickel, copper, and tungsten, and the substrate 1 serves as a space for growing a thin film.
  • the substrate 1 Before the deposition treatment on the surface of the substrate 1, the substrate 1 needs to be cleaned to ensure that the surface of the substrate 1 is clean, and impurities are not adhered to the surface to adversely affect the performance of the absorber.
  • the metal used for the first metal layer 2 is tungsten
  • the metal used for the second metal layer 4 is also tungsten.
  • the melting point of tungsten is the highest among all metals, when tungsten is used in the manufacture of a perfect absorber, if other manufacturing methods are used, tungsten will melt the electron beam photoresist during the evaporation process, so that the electron beam photoresist The formed pattern is broken, resulting in difficulty in peeling off the electron beam resist, and the pattern of the metal tungsten after the peeling is distorted, which deteriorates the absorption efficiency of the perfect absorber. Moreover, when other metal crucibles are used, the melting point of other metals is not as high as that of tungsten metal, so the perfect absorber produced is not as effective as the perfect absorber made of tungsten metal.
  • the thickness of the first metal layer 2 is not less than 200 nm, the main function is to reduce the transmittance to zero, and 200 nm is a minimum thickness that ensures that the transmittance is almost zero.
  • the thickness of the two metal layers 4 is 100-140 nm, which can make the effect of reducing reflection more obvious, but below or above this interval will obviously enhance the surface reflectance, which is not conducive to absorption.
  • the first metal layer 2 has a thickness of 200 to 300 nm.
  • the deposition process of the first metal layer 2 is performed by magnetron sputtering, the magnetron sputtering power is 300 ⁇ 400 W, and the deposition time is 15 ⁇ 25 min; the deposition process of the second metal layer 4 is adopted.
  • the magnetron sputtering power is 300 ⁇ 400W, and the deposition time is 6 ⁇ 10min.
  • the material of the dielectric layer 3 is any one of silicon dioxide, silicon nitride, MgF 2 , and A1 2 0 3 .
  • the dielectric layer 3 is a prerequisite for generating magnetic resonance.
  • the thickness is 60-80 nm, and the thickness can make the upper and lower free electrons in the metal layer interact with each other, that is, they are coupled to each other. Below or above this thickness interval, the effect is too strong or too weak to be A resonance peak is generated.
  • the deposition process of the dielectric layer 3 is performed by electron beam evaporation, and the evaporation rate is 3 to 5 angstroms/second, and the film thickness is relatively uniform and the surface roughness is low.
  • the electron beam photoresist 5 is a positive gel
  • the positive gel is developed in the exposure zone by using a crucible, and an isolated hole can be obtained with high resolution and no pollution to the environment.
  • the positive adhesive is ZEP520A, and the performance of dry etching is better.
  • the thickness of the electron beam photoresist 5 spin-coated is 200 to 250 nm.
  • the heat curing temperature is 180 to 200 ° C, and the heat curing time is 1.5 to 4.5 minutes.
  • the thermally cured photoresist is exposed and developed, and a photolithography machine is used, and the photolithography machine adopts a NanoBeam NB5 model lithography machine.
  • the lithography machine device can set the corresponding program, and the exposure and development graphics are performed according to the program settings.
  • an unexposed circular area and other areas of exposure may be formed.
  • the dry etching etches between 130 and 140 s, the gas pressure is 15 to 20 mTorr, and the gas is 0 2
  • the second metal layer 4 of the perfect absorber is a plurality of cylinders arranged in a periodic square array, the cylinder period is 500-600 nm, and the diameter of the cylinder is 250-350 nm.
  • the structure arranged in a cylinder of course, the second metal layer 4 may also have a prismatic or square structure. Only in all structures, the cylinder is easy to process, and surface plasma resonance can be excited between the second metal layer 4 and the air, and coupled magnetic resonance can be generated between adjacent cells.
  • the cylinder has a diameter of 300 nm and the cylinder period in the array is 500 nm.
  • a method of manufacturing a perfect absorber comprising the steps of:
  • a magnetron sputtering method depositing 100 nm at a power of 300 W on the surface of the above-mentioned silicon dioxide dielectric layer a second tungsten film (ie, a second metal layer), deposited for 8 minutes, as shown in FIG. 9;
  • a method of manufacturing a perfect absorbent body comprising the steps of:
  • a 200 nm first tungsten film ie, a first metal layer
  • a method of manufacturing a perfect absorber comprising the steps of: [0072] 1) cleaning the quartz substrate, so that the oil stain on the quartz surface is removed, and the quartz is dried, and is used;
  • [0073] 2 using a method of magnetron sputtering, depositing a 300 nm first tungsten film (ie, a first metal layer) at a power of 400 W on the surface of the clean quartz, depositing a turn for 25 minutes;
  • a 300 nm first tungsten film ie, a first metal layer

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un absorbeur parfait, comprenant au moins les étapes suivantes consistant : 1) à déposer séquentiellement, sur une surface d'un substrat propre et vers l'extérieur, une première couche métallique, une couche diélectrique et une seconde couche métallique ; 2) à déposer par rotation une photorésine à faisceau d'électrons sur une surface de la seconde couche métallique ; 3) à effectuer un traitement de durcissement thermique sur la photorésine à faisceau d'électrons déposée par rotation ; 4) à effectuer une exposition et un traitement de développement sur la photorésine à faisceau d'électrons durcie thermiquement afin d'obtenir une zone de photorésine à faisceau d'électrons non exposée ; 5) et à effectuer un traitement de gravure sèche sur la zone de photorésine à faisceau d'électrons exposée et développée de façon à ce que la seconde couche métallique puisse se casser et former une pluralité de structures d'agencement de matrice carrée périodique, puis à éliminer la photorésine à faisceau d'électrons non exposée afin d'obtenir un absorbeur parfait. Le procédé de fabrication d'un absorbeur parfait n'endommage pas la résine photosensible, et les réseaux métalliques décollés ne sont pas déformés.
PCT/CN2017/078599 2017-03-29 2017-03-29 Procédé de fabrication d'un absorbeur parfait Ceased WO2018176267A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/CN2017/078599 WO2018176267A1 (fr) 2017-03-29 2017-03-29 Procédé de fabrication d'un absorbeur parfait
CN201780000177.3A CN107114006B (zh) 2017-03-29 2017-03-29 完美吸收体的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2017/078599 WO2018176267A1 (fr) 2017-03-29 2017-03-29 Procédé de fabrication d'un absorbeur parfait

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WO2018176267A1 true WO2018176267A1 (fr) 2018-10-04

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Publication number Priority date Publication date Assignee Title
CN109459808B (zh) * 2018-12-25 2021-12-24 中国科学院微电子研究所 一种完美吸收体的制备方法及完美吸收体
CN109738975B (zh) * 2018-12-25 2021-01-26 中国科学院微电子研究所 一种完美吸收体的制备方法及完美吸收体
CN111766222B (zh) * 2020-07-24 2022-03-15 江苏致微光电技术有限责任公司 一种基于柔性基底的lspr传感器及其制备方法和应用
CN115032729B (zh) * 2022-06-28 2024-02-13 中国人民解放军国防科技大学 一种基于微纳结构的双波段制导激光吸收器件及其制备方法
CN115985846B (zh) * 2023-02-10 2023-06-06 合肥晶合集成电路股份有限公司 半导体结构的制作方法以及半导体结构

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0941773B1 (fr) * 1998-03-13 2003-10-29 Saint-Gobain Glass France Procédé de dépôt de couches à base d'oxyde(s) métallique(s)
CN101726990A (zh) * 2009-12-15 2010-06-09 中国科学院光电技术研究所 一种用于200nm以下线宽超衍射光刻的硅掩模及其制作方法
CN103869637A (zh) * 2014-03-10 2014-06-18 中国电子科技集团公司第五十五研究所 采用光刻胶剥离制备斜坡状边缘金属膜的工艺方法
CN105887032A (zh) * 2016-05-10 2016-08-24 中国建筑材料科学研究总院 屏蔽光窗及其制备方法
CN106169416A (zh) * 2016-08-29 2016-11-30 复旦大学 一种极紫外掩模的制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5098735A (en) * 1990-09-14 1992-03-24 Advanced Research Technologies Shielding of houses and buildings from low and high frequency EMF radiation by organic based stabilized nickel conductive coatings
US7864095B2 (en) * 2004-02-27 2011-01-04 Mitsubishi Gas Chemical Company, Inc. Wave absorber and manufacturing method of wave absorber
CN102983070B (zh) * 2011-09-05 2017-02-15 深圳光启高等理工研究院 一种超材料的制备方法和超材料
US20130314765A1 (en) * 2012-05-25 2013-11-28 The Trustees Of Boston College Metamaterial Devices with Environmentally Responsive Materials
CN106329146B (zh) * 2016-09-09 2019-11-08 电子科技大学 一种柔性太赫兹超材料吸波器及其制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0941773B1 (fr) * 1998-03-13 2003-10-29 Saint-Gobain Glass France Procédé de dépôt de couches à base d'oxyde(s) métallique(s)
CN101726990A (zh) * 2009-12-15 2010-06-09 中国科学院光电技术研究所 一种用于200nm以下线宽超衍射光刻的硅掩模及其制作方法
CN103869637A (zh) * 2014-03-10 2014-06-18 中国电子科技集团公司第五十五研究所 采用光刻胶剥离制备斜坡状边缘金属膜的工艺方法
CN105887032A (zh) * 2016-05-10 2016-08-24 中国建筑材料科学研究总院 屏蔽光窗及其制备方法
CN106169416A (zh) * 2016-08-29 2016-11-30 复旦大学 一种极紫外掩模的制造方法

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CN107114006A (zh) 2017-08-29

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