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WO2018174092A1 - Solution de lavage pour substrats pour dispositifs à semi-conducteur, procédé de lavage de substrat pour dispositifs à semi-conducteur, procédé de production de substrat pour dispositifs à semi-conducteur, et substrat pour dispositifs à semi-conducteur - Google Patents

Solution de lavage pour substrats pour dispositifs à semi-conducteur, procédé de lavage de substrat pour dispositifs à semi-conducteur, procédé de production de substrat pour dispositifs à semi-conducteur, et substrat pour dispositifs à semi-conducteur Download PDF

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Publication number
WO2018174092A1
WO2018174092A1 PCT/JP2018/011187 JP2018011187W WO2018174092A1 WO 2018174092 A1 WO2018174092 A1 WO 2018174092A1 JP 2018011187 W JP2018011187 W JP 2018011187W WO 2018174092 A1 WO2018174092 A1 WO 2018174092A1
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Prior art keywords
semiconductor device
component
substrate
device substrate
mass
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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PCT/JP2018/011187
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English (en)
Japanese (ja)
Inventor
俊明 柴田
憲 原田
智博 草野
祐太朗 竹下
河瀬　康弘
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Mitsubishi Chemical Corp
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Mitsubishi Chemical Corp
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Priority to CN201880019482.1A priority Critical patent/CN110447090A/zh
Priority to JP2019507709A priority patent/JPWO2018174092A1/ja
Publication of WO2018174092A1 publication Critical patent/WO2018174092A1/fr
Anticipated expiration legal-status Critical
Priority to JP2022128053A priority patent/JP7400898B2/ja
Ceased legal-status Critical Current

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  • the present invention relates to a cleaning liquid for a semiconductor device substrate.
  • the present invention also relates to a method for cleaning a semiconductor device substrate, a method for manufacturing a semiconductor device substrate, and a semiconductor device substrate.
  • a semiconductor device substrate is a chemical mechanical polishing (chemical) that uses a polishing slurry made of a water-based slurry containing abrasive fine particles after forming a metal film or interlayer insulating film deposition layer on a silicon wafer substrate.
  • CMP Mechanical Polishing
  • the surface is flattened by a process, and a new layer is stacked on the flattened surface.
  • high-precision flatness in each layer is required, and the importance of planarization by CMP is increasing.
  • Cu wiring made of a copper (Cu) film having a low resistance value has been introduced in order to increase the speed and integration of devices.
  • Cu is suitable for microfabrication because of its good workability, but is susceptible to the influence of acid components and alkali components, so that corrosion of the Cu wiring and stability of the oxidized state are problematic in the CMP process.
  • a large amount of abrasive grains such as colloidal silica used in the CMP process and organic residues derived from the anticorrosive contained in the slurry are present on the surface of the semiconductor device substrate after the CMP process. In order to remove these, the semiconductor device substrate after the CMP process is subjected to a cleaning process.
  • an acidic cleaning solution or an alkaline cleaning solution is used.
  • both of the solvents of the cleaning liquid are water
  • the colloidal silica is positively charged in the aqueous solution
  • the substrate surface is negatively charged, the electric attractive force works, and the colloidal silica is removed. It becomes difficult.
  • the alkaline cleaning liquid is rich in OH ⁇ in the aqueous solution, so that both the colloidal silica and the substrate surface are negatively charged, an electric repulsive force works, and the colloidal silica can be easily removed. .
  • Cu is oxidized to Cu 2+ in an acidic aqueous solution and dissolved in the liquid, but a passive film such as Cu 2 O or CuO is formed on the surface in an alkaline aqueous solution. Since copper is exposed on the surface of the semiconductor device substrate after the CMP step, it is better to use an alkaline cleaning solution than an acidic cleaning solution for the copper of the semiconductor device substrate in the cleaning step after the CMP step. It is thought to reduce corrosion.
  • Patent Document 1 contains (A) a chelating agent, (B) a compound represented by NH 2 —R—NH 2 , and (C) water.
  • a substrate cleaning solution for semiconductor devices having a pH of 8 to 14 is described.
  • Patent Document 2 discloses a substrate cleaning solution for a semiconductor device having a pH of 8 or more, which contains (A) histidine and / or a histidine derivative, (B) ascorbic acid, (C) gallic acid, and (D) water. It is described that an oxide film of Cu 2 O exists stably on the surface and the Cu—BTA complex is easily removed.
  • (B) the ascorbic acid and (C) gallic acid-free (A) histidine and / or histidine derivatives and (D) water cleaning solution for semiconductor device substrates having a pH of 8 or more are composed of an oxide film on the Cu surface. It is described that it becomes non-uniform.
  • Patent Document 3 discloses a cleaning liquid for a semiconductor device substrate having a barrier metal layer, wherein the barrier metal layer of the semiconductor device substrate includes at least one metal selected from the group consisting of Ta, Ti, and Ru.
  • the cleaning liquid contains histidine, a pH adjuster, and water, and the concentration of histidine in the cleaning liquid is 0.0125% by mass or more. It is described that when the semiconductor device substrate after the CMP process is cleaned with this cleaning solution, the cleaning property and the anticorrosion property can be improved in a balanced manner.
  • an alkaline cleaning solution is excellent in anticorrosion, but has a problem in removing an organic residue (Cu-BTA) remaining on a semiconductor device substrate after the CMP process.
  • the alkaline cleaning liquid described in Patent Documents 2 and 3 can efficiently remove the organic residual (Cu-BTA) remaining on the semiconductor device substrate after the CMP process by containing histidine. It has become possible.
  • the semiconductor device substrate after the cleaning process performed after the CMP process may be left in the atmosphere for a certain period (tens of minutes to one day or more).
  • a certain period tens of minutes to one day or more.
  • the semiconductor device substrate cleaning liquid described in Patent Documents 2 and 3 is a cleaning liquid having a sufficient function in terms of avoiding the formation of the fine foreign matter and removing organic residues on the substrate surface after the CMP process.
  • no conventional alkaline cleaning solution has been found that can achieve both of these.
  • an object of the present invention is to provide a cleaning liquid that is used in a semiconductor device substrate cleaning process, can suppress the formation of minute foreign matter due to oxidation of metal wiring, and has a high organic residue removing power on the substrate surface.
  • Another object of the present invention is to provide a semiconductor device substrate cleaning method, a semiconductor device substrate manufacturing method, and a semiconductor device substrate using the cleaning liquid.
  • the present inventors have found that CuO formed on the substrate surface where Cu is exposed in cleaning of a semiconductor device substrate with an alkaline cleaning liquid containing a specific component. Focusing on the fact that the formation of minute foreign matters on the surface of the substrate by being left in the above-described atmosphere can be controlled by the oxide film of Cu and Cu 2 O, the present invention has been completed.
  • a cleaning solution for a substrate for a semiconductor device having a pH of 8 or more and 11.5 or less and containing the following components (A) to (E): Component (A): Compound containing at least one selected from the group consisting of compounds represented by the following general formulas (1) to (3)
  • R 1 to R 6 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a carboxyl group, a carbonyl group, or a functional group having an ester bond.
  • R 11 to R 17 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a carboxyl group, a carbonyl group, or a functional group having an ester bond.
  • R 21 to R 28 each independently represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a carboxyl group, a carbonyl group, or a functional group having an ester bond.
  • the component (A) is represented by the following general formulas (1) to ( The cleaning solution for a semiconductor device substrate according to [1], which contains at least one selected from the group consisting of compounds represented by 2).
  • R 1 to R 6 each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.
  • R 11 to R 17 each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.
  • the component (A) contains at least one selected from the group consisting of 1,2-diaminopropane, 1,3-diaminopropane, and N-methyl-1,3-diaminopropane, [1] Or the washing
  • the component (C) includes at least one selected from the group consisting of oxalic acid, citric acid, tartaric acid, malic acid and lactic acid, according to any one of [1] to [3] Cleaning solution for semiconductor device substrates.
  • the component (D) is a group consisting of an inorganic alkali compound containing an alkali metal, an inorganic alkali compound containing an alkaline earth metal, and an organic quaternary ammonium hydroxide represented by the following general formula (4).
  • R 31 represents a hydroxyl group, an alkoxy group or an alkyl group which may be substituted with a halogen, and the four R 31 s may be the same as or different from each other.
  • R 31 represents a hydroxyl group, an alkoxy group or an alkyl group which may be substituted with a halogen, and the four R 31 s may be the same as or different from each other.
  • [6] The cleaning solution for a semiconductor device substrate according to any one of [1] to [5], wherein the pH is 10 or more and 11 or less.
  • [11] A method for cleaning a semiconductor device substrate, wherein the semiconductor device substrate is cleaned using the semiconductor device substrate cleaning liquid according to any one of [1] to [10].
  • [12] The method for cleaning a semiconductor device substrate according to [11], wherein the semiconductor device substrate contains copper wiring and a low dielectric constant insulating film on the substrate surface.
  • a method for manufacturing a semiconductor device substrate comprising a step of cleaning the semiconductor device substrate using the semiconductor device substrate cleaning liquid according to any one of [1] to [10].
  • [15] A semiconductor device substrate obtained by cleaning a semiconductor device substrate using the semiconductor device substrate cleaning liquid according to any one of [1] to [10].
  • the cleaning solution for a semiconductor device substrate of the present invention it is possible to suppress the formation of minute foreign matters on the substrate after cleaning while suppressing defects on the substrate in the cleaning step of the semiconductor device substrate, and the substrate surface
  • the organic residue on the top can be removed and efficient cleaning can be performed.
  • the semiconductor device substrate cleaning liquid of the present invention (hereinafter sometimes referred to as "the cleaning liquid of the present invention") is a semiconductor device cleaning, preferably after a CMP step in semiconductor device manufacturing.
  • a cleaning liquid used in a substrate cleaning process having a pH of 8 or more and 11.5 or less, and contains the following components (A) to (E).
  • Component (A) Compound containing at least one selected from the group consisting of compounds represented by the following general formulas (1) to (3)
  • R 1 to R 6 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a carboxyl group, a carbonyl group, or a functional group having an ester bond.
  • R 11 to R 17 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a carboxyl group, a carbonyl group, or a functional group having an ester bond.
  • R 21 to R 28 each independently represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a carboxyl group, a carbonyl group, or a functional group having an ester bond.
  • the histidine content is preferably 0% by mass or more and 5% by mass or less, more preferably 0% by mass or more and 0.05% by mass or less, in the total amount of the cleaning liquid of 100% by mass. More preferably, it is 0 mass% or more and 0.01 mass% or less.
  • the content of histidine in the cleaning liquid is preferably small. If the content is 0.01% by mass or less, the influence of histidine is greatly suppressed. be able to.
  • the cleaning liquid of the present invention has a histidine content of 0% by mass or more and 0.01% by mass or less in the total amount of the cleaning liquid of 100% by mass, even when used for cleaning a semiconductor device substrate after the CMP step. It becomes difficult to form minute foreign matter. The reason is presumed as follows.
  • oxide film With an appropriate thickness. However, if a certain amount or more of histidine is present, the above-mentioned causes cause problems for semiconductor devices.
  • An oxide film (CuO or Cu 2 O) to be formed on the exposed copper portion on the substrate surface is difficult to form, and even if formed, the oxide film is presumed to be thin.
  • the cleaning liquid of the present invention has a pH of 8 or more and 11.5 or less.
  • the pH of the cleaning liquid is 8 or more, the zeta potential of colloidal silica or the like in the liquid can be reduced, and an electrical repulsive force with the substrate can be obtained. Thereby, the removal of the fine particles can be facilitated, and the removed fine particles can be prevented from reattaching to the surface of the substrate to be cleaned.
  • the pH of the cleaning liquid of the present invention is preferably 9 or more, and more preferably 10 or more.
  • the pH needs to be 11.5 or less, preferably 11.3 or less, and more preferably 11 or less.
  • pH in the cleaning liquid of the present invention can be adjusted to the above-described pH range by adding component (D): pH adjusting agent and other components described later.
  • the component (A) contained in the cleaning liquid of the present invention is a compound containing at least one selected from the group consisting of the compounds represented by the general formulas (1) to (3).
  • the compounds represented by the general formulas (1) to (3) are compounds having two amino groups in the molecule, and these compounds function as a chelating agent as a cleaning solution for a substrate for a semiconductor device. Specifically, impurity metals such as tungsten contained in the metal wiring on the substrate surface, insoluble metal complexes of anticorrosive and copper present in the barrier slurry used in the CMP process, alkali metals such as sodium and potassium Is dissolved and removed by chelating action.
  • R 1 to R 6 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a carboxyl group, a carbonyl group, or a functional group having an ester bond.
  • alkyl group having 1 to 4 carbon atoms include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, and tert-butyl group.
  • R 1 to R 6 each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and more preferably, R 1 to R 6 each independently represents a hydrogen atom, a methyl group or an ethyl group, More preferably, R 1 to R 6 each independently represent a hydrogen atom or a methyl group.
  • R 11 to R 17 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a carboxyl group, a carbonyl group, or a functional group having an ester bond.
  • the alkyl group having 1 to 4 carbon atoms is the same as described above.
  • R 11 to R 17 each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, more preferably, R 11 to R 17 each independently represents a hydrogen atom, a methyl group or an ethyl group, More preferably, R 11 to R 17 each independently represent a hydrogen atom or a methyl group.
  • R 21 to R 28 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a carboxyl group, a carbonyl group, or a functional group having an ester bond.
  • the alkyl group having 1 to 4 carbon atoms is the same as described above.
  • R 21 to R 28 each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, more preferably R 21 to R 28 each independently represent a hydrogen atom, a methyl group or an ethyl group, More preferably, R 21 to R 28 each independently represent a hydrogen atom or a methyl group.
  • the component (A) preferably contains at least one selected from the group consisting of the compounds represented by the general formulas (1) to (2) from the viewpoint of organic residue removal. It is more preferable to contain the compound represented by (2).
  • Component (A) is more preferably composed of 1,2-diaminoethane, 1,2-diaminopropane, 1,3-diaminopropane, 1,4-diaminobutane, 2-methyl-1,3-diaminopropane. At least one selected from the group, more preferably at least one selected from the group consisting of 1,2-diaminopropane, 1,3-diaminopropane, N-methyl-1,3-diaminopropane Particularly preferably, it contains at least one selected from the group consisting of 1,3-diaminopropane and N-methyl-1,3-diaminopropane.
  • a component (A) may be used individually by 1 type, and may use 2 or more types together by arbitrary ratios.
  • Component (B) As the ascorbic acid of the component (B) contained in the cleaning liquid of the present invention, L-ascorbic acid, D-ascorbic acid, and isoascorbic acid are preferable, and salts thereof can also be suitably used. More preferably, L-ascorbic acid is used. Ascorbic acid can reduce the redox potential of the aqueous solution and control the oxidation state of metals such as copper.
  • Component (C) contained in the cleaning liquid of the present invention is polycarboxylic acid or hydroxycarboxylic acid.
  • a polycarboxylic acid is a compound having two or more carboxyl groups in the molecule
  • a hydroxycarboxylic acid is a compound having one or more hydroxy groups and one or more carboxyl groups in the molecule.
  • the compound since a compound having a relatively small number of carbon atoms is easier to obtain and handle, the compound preferably has 2 to 10 carbon atoms, more preferably 3 to 8 carbon atoms, and particularly preferably Is 3-6.
  • component (C) include oxalic acid, citric acid, tartaric acid, malic acid and lactic acid, with citric acid being particularly preferred. These may be used individually by 1 type and may use 2 or more types together by arbitrary ratios. Moreover, you may use what a part of carboxyl group of the component (C) became a salt in the range which does not impair the effect of this invention.
  • the pH adjuster of the component (D) of the cleaning liquid of the present invention is not particularly limited as long as it can be adjusted to the target pH, and an acid compound or an alkali compound can be used.
  • the acid compound include inorganic acids such as sulfuric acid and nitric acid and salts thereof, or organic acids such as acetic acid, lactic acid, oxalic acid, tartaric acid and citric acid and salts thereof.
  • component (D) may be the same compound as component (C).
  • an organic alkali compound and an inorganic alkali compound can be used.
  • the organic alkali compound include quaternary ammonium such as organic quaternary ammonium hydroxide and salts thereof, trimethylamine, Preferable specific examples include salts of alkylamines such as triethylamine and derivatives thereof, and alkanolamines such as monoethanolamine and derivatives thereof.
  • Examples of the organic quaternary ammonium hydroxide as the organic alkali compound include those represented by the following general formula (4). (R 31 ) 4 N + OH ⁇ (4) (In the general formula (4), R 31 represents a hydroxyl group, an alkoxy group or an alkyl group which may be substituted with a halogen, and the four R 31 s may be the same as or different from each other.)
  • R 31 may be substituted with a hydroxyl group, an alkoxy group having 1 to 4 carbon atoms, or a halogen.
  • a hydroxyl group an alkoxy group having 1 to 4 carbon atoms, or a halogen.
  • the alkyl group a linear alkyl group having 1 to 4 carbon atoms and / or a linear hydroxyalkyl group having 1 to 4 carbon atoms is particularly preferable.
  • Examples of the alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, a propyl group, and a butyl group.
  • Examples of the hydroxyalkyl group having 1 to 4 carbon atoms include hydroxymethyl group, hydroxyethyl group, hydroxypropyl group, hydroxybutyl group and the like.
  • organic quaternary ammonium hydroxide examples include bis (2-hydroxyethyl) dimethylammonium hydroxide, tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, methyltriethyl.
  • TEAH tetraethylammonium hydroxide
  • Ammonium hydroxide, trimethyl (hydroxyethyl) ammonium hydroxide (common name: choline), triethyl (hydroxyethyl) ammonium hydroxide, and the like can be given.
  • organic quaternary ammonium hydroxides bis (2-hydroxyethyl) dimethylammonium hydroxide, trimethyl (hydroxyl) are used for reasons such as cleaning effect, low metal residue, economy, and stability of the cleaning solution.
  • Particularly preferred are ethyl) ammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, and the like.
  • the inorganic alkali compound is an inorganic compound containing ammonia or mainly an alkali metal or an alkaline earth metal and a salt thereof among those exhibiting alkalinity in an aqueous solution, and among these, water containing an alkali metal as the inorganic alkali compound.
  • Use of an oxide is preferable in terms of safety and cost. Specific examples include lithium hydroxide, sodium hydroxide, potassium hydroxide, rubidium hydroxide, cesium hydroxide and the like.
  • acid compounds or alkali compounds When these acid compounds or alkali compounds are used for the purpose of adjusting the pH of the cleaning liquid of the present invention, one kind may be used alone, or two or more kinds may be used in combination at an arbitrary ratio. Also good.
  • Particularly preferred acid compounds or alkali compounds include organic acids such as acetic acid, oxalic acid, tartaric acid and citric acid and salts thereof, inorganic alkali compounds such as sodium hydroxide and potassium hydroxide and salts thereof, tetramethylammonium hydroxide, and tetraethyl. Examples thereof include salts of quaternary ammonium such as ammonium hydroxide and choline and derivatives thereof.
  • Water which is the component (E) of the cleaning liquid of the present invention is a solvent for the cleaning liquid of the present invention.
  • water used as the solvent it is preferable to use deionized water or ultrapure water in which impurities are reduced as much as possible.
  • the cleaning liquid of the present invention may contain a solvent other than water, such as ethanol, as long as the effects of the present invention are not impaired.
  • the method for producing the cleaning liquid of the present invention is not particularly limited and may be a conventionally known method.
  • the components of the cleaning liquid (components (A) to (E) and other components used as necessary) are mixed.
  • it is produced by adding the components (A) to (D) and other components used as necessary to the component (E): water as a solvent.
  • the mixing order at that time is arbitrary as long as there is no particular problem such as reaction or precipitation, and any two or more components among the components of the cleaning liquid are blended in advance, and then the remaining components May be mixed, or all components may be mixed at once.
  • the concentration of component (A) is usually 0.001 to 20% by mass, preferably 0.001 to 10% by mass, more preferably 0.001 to 0.80% by mass, and still more preferably 0.8.
  • the content is 001 to 0.40 mass%, particularly preferably 0.002 to 0.30 mass%.
  • the concentration of the component (A) is 0.001% by mass or more, the effect of removing contamination of the substrate for a semiconductor device is sufficiently exhibited, and if it is 20% by mass or less, a metal such as Cu Difficult to cause problems such as corrosion of wiring.
  • the concentration of component (B) is usually 0.001 to 20% by mass, preferably 0.001 to 10% by mass, more preferably 0.001 to 0.80% by mass, and still more preferably 0.8. 005 to 0.40 mass%, particularly preferably 0.01 to 0.30 mass%.
  • the concentration of the component (B) is 0.001% by mass or more, it is difficult to cause troubles such as corrosion of metal wiring such as Cu. .
  • the concentration of component (C) is usually 0.001 to 10% by mass, preferably 0.001 to 7% by mass, more preferably 0.001 to 0.40% by mass, and still more preferably 0.8. It is 002 to 0.28 mass%, particularly preferably 0.005 to 0.20 mass%.
  • the concentration of the component (C) is 0.001% by mass or more in the cleaning liquid of the present invention, the effect of removing contamination of the substrate for a semiconductor device is sufficiently exhibited, and when it is 10% by mass or less, the cost of the cleaning liquid is increased. It doesn't take much.
  • the concentration of the component (D) is not particularly limited, but is usually 0.002 to 30% by mass, preferably 0.00. It is 002 to 20% by mass, more preferably 0.002 to 1% by mass, still more preferably 0.01 to 0.5% by mass, and particularly preferably 0.1 to 0.3% by mass.
  • the cleaning liquid of the present invention can be produced by adjusting the concentration of each component so that the concentration is suitable for cleaning.
  • component (E) other than water
  • a component (E): diluted with water is used after the production of a cleaning solution (hereinafter sometimes referred to as “cleaning stock solution”) containing each of the above components at a high concentration.
  • the mass ratio of the component (A) to the component (B) is that the removal of contamination of the substrate for semiconductor devices and the suppression of corrosion of metal wiring such as Cu From the viewpoint, it is preferably 0.01 to 100, more preferably 0.1 to 25, and particularly preferably 0.5 to 10.
  • the mass ratio of the component (A) to the component (C) is the removability of contamination of the substrate for semiconductor devices and the suppression of corrosion of metal wiring such as Cu. From the viewpoint, it is preferably 0.1 to 200, more preferably 0.5 to 50, and particularly preferably 1 to 20.
  • the mass ratio of the component (A) to the component (D) is the contamination removability of the semiconductor device substrate, the suppression of corrosion of metal wiring such as Cu, and the pH. From the viewpoint of the adjustment, it is preferably 0.05 to 500, more preferably 0.1 to 200, and particularly preferably 0.2 to 50.
  • the mass ratio of the component (B) to the component (C) is preferably 0.25 to 20 from the viewpoint of removal of contamination of the semiconductor device substrate. More preferably, it is 0.5 to 10, particularly preferably 0.1 to 5.
  • the mass ratio of the component (B) to the component (D) is preferably 0 from the viewpoint of removal of contamination of the semiconductor device substrate and pH adjustment. 0.1 to 100, more preferably 0.5 to 50, and particularly preferably 1 to 10.
  • the mass ratio of the component (C) to the component (D) is preferably 0 from the viewpoint of removal of contamination of the semiconductor device substrate and pH adjustment. 0.1 to 100, more preferably 0.5 to 50, and particularly preferably 1 to 10.
  • the concentration of component (A) in the washing stock solution is usually 0.10 to 20% by mass, preferably 0.10 to 10% by mass, more preferably 0.20 to 7% by mass.
  • the concentration of component (B) is usually 0.10 to 20% by mass, preferably 0.50 to 10% by mass, more preferably 1.00 to 7% by mass.
  • the concentration of component (C) is usually 0.10 to 10% by mass, preferably 0.20 to 7% by mass, more preferably 0.50 to 5% by mass.
  • the concentration of component (D) is usually 0.20 to 30% by mass, preferably 0.50 to 20% by mass, more preferably 1.00 to 10% by mass.
  • the concentration of the components (A) to (D) in the washing stock solution is in such a range, the components (A) to (D) and other components added as necessary, and these reactants, During transportation and storage, it is difficult to separate or precipitate in the washing stock solution, and it can be suitably used as a washing solution having a concentration suitable for washing easily by adding component (E): water.
  • the cleaning solution of the present invention may be manufactured by diluting the cleaning stock solution so that the concentration of each component is appropriate for the semiconductor device substrate to be cleaned, or so Although each component may be directly prepared for production, it is preferably produced by diluting the cleaning stock solution.
  • the dilution rate of the cleaning solution of the present invention produced by diluting the cleaning stock solution is appropriately determined according to the semiconductor device substrate to be cleaned, but is preferably 40 to 90 times.
  • the concentrations of the components (A) to (D) in the cleaning liquid are values obtained by dividing the concentrations of the components (A) to (D) in the cleaning stock solution by the dilution rate.
  • the cleaning method of the present invention a method for cleaning a substrate for a semiconductor device of the present invention (hereinafter sometimes referred to as “the cleaning method of the present invention”) will be described.
  • the cleaning method of the present invention is performed by a method in which the above-described cleaning liquid of the present invention is brought into direct contact with a semiconductor device substrate.
  • the semiconductor device substrate to be cleaned examples include various semiconductor device substrates such as a semiconductor, glass, metal, ceramics, resin, magnetic material, and superconductor.
  • the cleaning liquid of the present invention is particularly suitable for a semiconductor device substrate having a metal or a metal compound on its surface as wiring, etc., because organic residues and abrasive grains can be removed with a short rinse. It is suitable for a semiconductor device substrate having Cu wiring on the surface.
  • examples of the metal used for the semiconductor device substrate include W, Cu, Ti, Cr, Co, Zr, Hf, Mo, Ru, Au, Pt, and Ag, and are used for the semiconductor device substrate.
  • examples of the metal compound to be used include nitrides, oxides and silicides of the above metals.
  • Cu and a compound containing Cu are more suitably used for a substrate for a semiconductor device.
  • the cleaning method of the present invention is suitable for a semiconductor device substrate having a low dielectric constant insulating material on the surface because the cleaning effect is high even for a low dielectric constant insulating material having strong hydrophobicity.
  • Examples of such a low dielectric constant insulating material include organic polymer materials such as Polyimide, BCB (Benzocyclobutylene), Flare (trade name, manufactured by Honeywell), SiLK (trade name, manufactured by Dow Chemical Co.), and FSG (Fluorinated silica). And inorganic polymer materials such as BLACK DIAMOND (trade name, manufactured by Applied Materials), and Aurora (trade name, manufactured by ASM Japan).
  • organic polymer materials such as Polyimide, BCB (Benzocyclobutylene), Flare (trade name, manufactured by Honeywell), SiLK (trade name, manufactured by Dow Chemical Co.), and FSG (Fluorinated silica).
  • inorganic polymer materials such as BLACK DIAMOND (trade name, manufactured by Applied Materials), and Aurora (trade name, manufactured by ASM Japan).
  • the cleaning method of the present invention is particularly preferably applied when the substrate for a semiconductor device has Cu wiring and a low dielectric constant insulating film on the substrate surface and the substrate is cleaned after the CMP process.
  • the abrasive includes abrasive particles such as colloidal silica (SiO 2 ), fumed silica (SiO 2 ), alumina (Al 2 O 3 ), and ceria (CeO 2 ).
  • abrasive particles are a main cause of contamination of the semiconductor device substrate.
  • the cleaning liquid of the present invention removes the fine particles adhering to the substrate and disperses them in the cleaning liquid and prevents the re-adhesion of the fine particles. It has a high effect on particulate contamination.
  • the abrasive may contain additives other than abrasive particles such as an oxidizing agent and a dispersant.
  • an anticorrosive agent is often added because the Cu film tends to corrode.
  • an azole anticorrosive having a high anticorrosive effect is preferably used. More specifically, examples of heteroatoms containing a heterocycle containing only nitrogen atoms include diazoles, triazoles, and tetrazoles, and heteroatoms containing heterocycles of nitrogen and oxygen atoms.
  • An oxazole type, an isoxazole type, and an oxadiazole type are mentioned, and those in which the hetero atom contains a nitrogen atom and a sulfur atom heterocycle include a thiazole type, an isothiazole type, and a thiadiazole type.
  • a benzotriazole (BTA) anticorrosive having an excellent anticorrosion effect is particularly preferably used.
  • the cleaning liquid of the present invention When the cleaning liquid of the present invention is applied to the surface of a substrate after being polished with an abrasive containing such an anticorrosive, it is excellent in that the contamination derived from the anticorrosive can be removed extremely effectively. That is, when these anticorrosives are present in the abrasive, the corrosion of the surface of the Cu film is suppressed, but on the other hand, it reacts with Cu ions eluted during polishing to produce a large amount of insoluble precipitates.
  • the cleaning liquid of the present invention can efficiently dissolve and remove such insoluble precipitates, and further can remove the surfactant that tends to remain on the metal surface by rinsing in a short time, thereby improving the throughput. Is possible.
  • the cleaning method of the present invention is suitable for cleaning a substrate for a semiconductor device after performing CMP treatment on the surface on which the Cu film and the low dielectric constant insulating film coexist, and in particular, using a polishing agent containing an azole anticorrosive agent for CMP. It is suitable for cleaning the treated substrate.
  • the cleaning method of the present invention is performed by a method in which the cleaning liquid of the present invention is brought into direct contact with the semiconductor device substrate. A cleaning liquid having a suitable component concentration is selected according to the type of the semiconductor device substrate to be cleaned.
  • the cleaning solution is brought into contact with the substrate by a dip method in which the cleaning solution is filled with the cleaning solution and the substrate is immersed, a spin method in which the substrate is rotated at high speed while flowing the cleaning solution from the nozzle onto the substrate, and a liquid is applied to the substrate.
  • Spray type etc. which are sprayed and washed.
  • an apparatus for performing such cleaning there are a batch type cleaning apparatus for simultaneously cleaning a plurality of substrates accommodated in a cassette, a single wafer type cleaning apparatus for mounting and cleaning a single substrate on a holder, and the like. .
  • any of the contact methods described above can be applied to the cleaning method of the present invention, but it is preferably used for spin-type and spray-type cleaning because it allows more efficient decontamination in a short time. In this case, it is preferable to apply to a single wafer cleaning apparatus in which the cleaning time and the amount of cleaning liquid used are desired, since these problems can be solved.
  • the cleaning method of the present invention is capable of removing contamination caused by fine particles adhering to the substrate when used in combination with a cleaning method based on physical force, particularly scrub cleaning using a cleaning brush or ultrasonic cleaning with a frequency of 0.5 MHz or higher. This is preferable because it further improves and shortens the cleaning time.
  • scrub cleaning is preferably performed using a resin brush.
  • the material of the resin brush can be arbitrarily selected, but for example, PVA (polyvinyl alcohol) is preferably used.
  • the temperature of the cleaning solution is usually room temperature, but may be heated to about 40 to 70 ° C. within a range not impairing the performance.
  • the method for manufacturing a semiconductor device substrate of the present invention includes a step of cleaning the semiconductor device substrate using the cleaning liquid of the present invention. Further, the semiconductor device substrate of the present invention is obtained by cleaning the semiconductor device substrate using the cleaning liquid of the present invention. The cleaning of the semiconductor device substrate using the cleaning liquid of the present invention is as described above in ⁇ Semiconductor device substrate cleaning method>.
  • Example 1 ⁇ Preparation of cleaning solution> As shown in Table 1, 0.04% by mass of 1,3-diaminopropane (manufactured by Guangei Chemical Co., Ltd.) as the component (A) and 0.06% by mass of ascorbic acid (Fuso Chemical Co., Ltd.) as the component (B) Company), 0.09% by mass of citric acid (manufactured by Showa Kako Co., Ltd.) as component (C), and 0.22% by mass of tetraethylammonium hydroxide (TEAH: manufactured by Sechem Japan GK) as component (D) was mixed with the ultrapure water of component (E) to prepare a cleaning solution for a substrate for a semiconductor device.
  • the concentration of component (E) was the residual concentration excluding component (A), component (B), component (C), component (D), histidine and other components.
  • Example 1 (Defect assessment) CMP was performed using a silica slurry of a silicon substrate on which a Cu film was formed and a CMP apparatus (Lapmaster SFT Corporation “LGP-15RD”). Thereafter, the substrate surface after the CMP process was cleaned using a PVA brush while introducing the cleaning liquid obtained in Example 1 onto the substrate surface.
  • the number of defects of 0.35 ⁇ m or more on the substrate was examined using a wafer surface inspection apparatus (“LS-6600” manufactured by Hitachi High-Tech Fielding Co., Ltd.). The results are shown in Table 1.
  • a peak derived from Cu2p 3/2 was detected at 932.5 eV, and a peak derived from N1s was detected at 400 eV.
  • the amount of Cu and N detected from each peak intensity was measured to determine the atomic weight ratio (N / Cu). The results are shown in Table 1.
  • the atomic weight ratio exceeds 0.05, the amount of N-containing organic matter remaining on the Cu surface is large, so it is necessary to set it to at least 0.05, preferably 0.03 or less. If the atomic weight ratio is 0.05 or less, the amount of N-containing organic matter remaining on the Cu surface is small, so that there is little organic residue on the substrate surface after the CMP process.
  • the intensity ratio is less than 0.9, the Cu oxide film is thin, and oxidation of the exposed copper surface on the substrate occurs after cleaning. Therefore, it is necessary to set it to at least 0.9, preferably 1.0 or more.
  • the intensity ratio is 1.0 or more, oxidation of the copper surface is suppressed, so that a Cu oxide film is sufficiently formed, and formation of minute foreign matters on the substrate surface can be suppressed.
  • Example 2 A cleaning liquid was obtained in the same manner as in Example 1, except that the blending ratio of components (A) to (D) was as shown in Table 1. Using the obtained cleaning solution, in the same manner as in Example 1, pH measurement, defect evaluation, organic residue evaluation, and oxide film thickness evaluation were performed. The results are shown in Table 1.
  • Example 3 In Example 1, component (A) was 1,2-diaminopropane (manufactured by Guangei Chemical Co., Ltd.), and the blending proportions of components (A) to (D) were as shown in Table 1 in the same manner. A cleaning solution was obtained. Using the obtained cleaning liquid, pH measurement, defect evaluation, organic residue evaluation, and oxide film thickness evaluation were performed by the methods described in Example 1. The results are shown in Table 1.
  • Example 4 In Example 1, the component (A) is 1,2-diaminopropane (manufactured by Guangei Chemical Co., Ltd.), the blending ratio of the components (A) to (D) is shown in Table 1, and 0.04% by mass A cleaning solution was obtained in the same manner except that histidine (manufactured by Ajinomoto Co., Inc.) was added. Using the obtained cleaning solution, in the same manner as in Example 1, pH measurement, defect evaluation, organic residue evaluation, and oxide film thickness evaluation were performed. The results are shown in Table 1.
  • Example 5 In Example 1, the component (A) is 1,2-diaminopropane (manufactured by Guangei Chemical Co., Ltd.), the blending ratio of the components (A) to (D) is shown in Table 1, and 0.09% by mass A cleaning solution was obtained in the same manner except that histidine (manufactured by Ajinomoto Co., Inc.) was added. Using the obtained cleaning solution, in the same manner as in Example 1, pH measurement, defect evaluation, organic residue evaluation, and oxide film thickness evaluation were performed. The results are shown in Table 1.
  • Example 6 In Example 1, component (A) was N-methyl-1,3-diaminopropane (manufactured by Guangei Chemical Co., Ltd.), and the blending ratio of components (A) to (D) was as shown in Table 1. Similarly, a cleaning liquid was obtained. Using the obtained cleaning solution, in the same manner as in Example 1, pH measurement, defect evaluation, organic residue evaluation, and oxide film thickness evaluation were performed. The results are shown in Table 1.
  • Example 1 A cleaning liquid was obtained in the same manner as in Example 1 except that the component (A) was not used and the blending ratios of the components (B) to (D) were as shown in Table 1. Using the obtained cleaning solution, in the same manner as in Example 1, pH measurement, defect evaluation, organic residue evaluation, and oxide film thickness evaluation were performed. The results are shown in Table 1.
  • Example 2 A cleaning liquid was obtained in the same manner as in Example 1, except that the blending ratio of components (A) to (D) was as shown in Table 1. Using the obtained cleaning solution, pH measurement and defect evaluation were performed by the method described in Example 1. The results are shown in Table 1. In Comparative Example 2, since the number of defects on the substrate was large, the organic residue evaluation and the oxide film thickness evaluation were not performed.
  • Example 3 N- (2-aminoethyl) piperazine (manufactured by Tokyo Chemical Industry Co., Ltd.) was used instead of component (A), and N- (2-aminoethyl) piperazine and components (B) to (D) A cleaning solution was obtained in the same manner except that the blending ratio was as shown in Table 1. Using the obtained cleaning solution, pH measurement and defect evaluation were performed by the method described in Example 1. The results are shown in Table 1. In Comparative Example 3, since the number of defects on the substrate was large, the organic residue evaluation and the oxide film thickness evaluation were not performed.
  • Example 4 In Example 1, 2- ⁇ [2- (dimethylamino) ethyl] methylamino ⁇ ethanol (manufactured by Tokyo Chemical Industry Co., Ltd.) was used instead of component (A), and 2- ⁇ [2- (dimethylamino) ethyl] A cleaning solution was obtained in the same manner except that the mixing ratio of methylamino ⁇ ethanol and components (B) to (D) was as shown in Table 1. Using the obtained cleaning solution, pH measurement and defect evaluation were performed by the method described in Example 1. The results are shown in Table 1. In Comparative Example 4, since the number of defects on the substrate was large, the organic residue evaluation and the oxide film thickness evaluation were not performed.
  • Example 5 In Example 1, N, N, N ′, N′-tetrakis (2-hydroxypropyl) ethylenediamine (manufactured by Tokyo Chemical Industry Co., Ltd.) was used instead of component (A), and N, N, N ′, N′— A cleaning liquid was obtained in the same manner except that the mixing ratio of tetrakis (2-hydroxypropyl) ethylenediamine and components (B) to (D) was as shown in Table 1. Using the obtained cleaning solution, pH measurement and defect evaluation were performed by the method described in Example 1. The results are shown in Table 1. In Comparative Example 5, since the number of defects on the substrate was large, the organic residue evaluation and the oxide film thickness evaluation were not performed.
  • Example 1 the number of defects is as small as 5, the atomic weight ratio (N / Cu) is as low as 0.02, and the peak intensity ratio at 569 eV / 567 eV is also 1.0 or more. It was found that almost no compound containing was present, and that the Cu oxide film was formed thick, and oxidation was unlikely to occur when left in the atmosphere. The same applies to Example 2, Example 3, and Example 6.
  • Example 4 and Example 5 contained histidine in addition to the components of Example 1, but the atomic weight ratio (N / Cu) was slightly high, but the number of defects was small.
  • Comparative Example 1 the atomic weight ratio (N / Cu) is as low as 0.01, and the peak intensity ratio at 569 eV / 567 eV is as high as 1.4. However, since it does not contain the component (A), the number of defects is small. There were 55. Since the comparative example 2 had a high pH of 11.9, the number of defects was large. Since Comparative Example 3 to Comparative Example 5 used a component different from the compounds represented by the general formulas (1) to (3) instead of the component (A), the number of defects was large.

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  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

La présente invention concerne une solution de lavage pour substrats pour dispositifs à semi-conducteur, qui a une valeur de pH de 8 à 11,5 inclus et contient un constituant (A) qui est un composé comprenant au moins un composé choisi dans le groupe constitué par les composés représentés respectivement par les formules générales (1) à (3), un constituant (B) qui est de l'acide ascorbique, un constituant (C) qui est un acide polycarboxylique ou un acide hydroxycarboxylique, un constituant (D) qui est un modificateur de pH, et un constituant (E) qui est de l'eau. (Dans les formules, R1 à R6, R11 à R17 et R21 à R28 sont tels que définis dans la description.)
PCT/JP2018/011187 2017-03-22 2018-03-20 Solution de lavage pour substrats pour dispositifs à semi-conducteur, procédé de lavage de substrat pour dispositifs à semi-conducteur, procédé de production de substrat pour dispositifs à semi-conducteur, et substrat pour dispositifs à semi-conducteur Ceased WO2018174092A1 (fr)

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JP2019507709A JPWO2018174092A1 (ja) 2017-03-22 2018-03-20 半導体デバイス用基板の洗浄液、半導体デバイス用基板の洗浄方法、半導体デバイス用基板の製造方法及び半導体デバイス用基板
JP2022128053A JP7400898B2 (ja) 2017-03-22 2022-08-10 半導体デバイス用基板の洗浄液、半導体デバイス用基板の洗浄方法、半導体デバイス用基板の製造方法及び半導体デバイス用基板

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020096053A (ja) * 2018-12-11 2020-06-18 三菱ケミカル株式会社 洗浄液、洗浄方法及び半導体ウェハの製造方法
JP2020107641A (ja) * 2018-12-26 2020-07-09 Jsr株式会社 半導体表面処理用組成物及び半導体表面の処理方法
JPWO2020045414A1 (ja) * 2018-08-30 2021-08-26 三菱ケミカル株式会社 洗浄液、洗浄方法及び半導体ウェハの製造方法
CN113692640A (zh) * 2019-04-15 2021-11-23 三菱化学株式会社 清洗液、清洗方法和半导体晶片的制造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021111914A1 (fr) * 2019-12-03 2021-06-10 三菱ケミカル株式会社 Liquide de nettoyage pour éliminer des composés de cérium, procédé de nettoyage et procédé de production de tranche de semi-conducteur

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009013987A1 (fr) * 2007-07-26 2009-01-29 Mitsubishi Gas Chemical Company, Inc. Composition de nettoyage et antirouille et procédé de production d'élément semi-conducteur ou d'élément d'affichage
JP2010287751A (ja) * 2009-06-12 2010-12-24 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
JP2014049521A (ja) * 2012-08-30 2014-03-17 Advanced Technology Materials Inc 銅配線半導体用洗浄剤
JP2014170927A (ja) * 2013-02-06 2014-09-18 Mitsubishi Chemicals Corp 半導体デバイス用基板洗浄液及び半導体デバイス用基板の洗浄方法
JP2014212262A (ja) * 2013-04-19 2014-11-13 関東化学株式会社 洗浄液組成物
JP2015165562A (ja) * 2014-02-06 2015-09-17 三菱化学株式会社 半導体デバイス用基板洗浄液及び半導体デバイス用基板の洗浄方法
US20160201016A1 (en) * 2015-01-13 2016-07-14 Cabot Microelectronics Corporation Cleaning composition and method for cleaning semiconductor wafers after cmp

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7375066B2 (en) * 2000-03-21 2008-05-20 Wako Pure Chemical Industries, Ltd. Semiconductor wafer cleaning agent and cleaning method
TWI258504B (en) * 2003-01-07 2006-07-21 Tosoh Corp Washing solution and washing method using the same
CN101346804B (zh) * 2005-12-21 2010-05-26 旭硝子株式会社 研磨用组合物、研磨方法及半导体集成电路用铜配线的制造方法
CN101888906B (zh) * 2007-12-17 2012-12-19 三洋化成工业株式会社 电子材料用清洗剂和清洗方法
KR20130129997A (ko) * 2010-11-29 2013-11-29 와코 쥰야꾸 고교 가부시키가이샤 구리배선용 기판 세정제 및 구리배선 반도체 기판 세정방법
WO2015068823A1 (fr) * 2013-11-08 2015-05-14 和光純薬工業株式会社 Agent de nettoyage pour substrats semi-conducteurs et procédé de traitement d'une surface de substrat semi-conducteur

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009013987A1 (fr) * 2007-07-26 2009-01-29 Mitsubishi Gas Chemical Company, Inc. Composition de nettoyage et antirouille et procédé de production d'élément semi-conducteur ou d'élément d'affichage
JP2010287751A (ja) * 2009-06-12 2010-12-24 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
JP2014049521A (ja) * 2012-08-30 2014-03-17 Advanced Technology Materials Inc 銅配線半導体用洗浄剤
JP2014170927A (ja) * 2013-02-06 2014-09-18 Mitsubishi Chemicals Corp 半導体デバイス用基板洗浄液及び半導体デバイス用基板の洗浄方法
JP2014212262A (ja) * 2013-04-19 2014-11-13 関東化学株式会社 洗浄液組成物
JP2015165562A (ja) * 2014-02-06 2015-09-17 三菱化学株式会社 半導体デバイス用基板洗浄液及び半導体デバイス用基板の洗浄方法
US20160201016A1 (en) * 2015-01-13 2016-07-14 Cabot Microelectronics Corporation Cleaning composition and method for cleaning semiconductor wafers after cmp

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2020045414A1 (ja) * 2018-08-30 2021-08-26 三菱ケミカル株式会社 洗浄液、洗浄方法及び半導体ウェハの製造方法
JP7276343B2 (ja) 2018-08-30 2023-05-18 三菱ケミカル株式会社 洗浄液、洗浄方法及び半導体ウェハの製造方法
JP2020096053A (ja) * 2018-12-11 2020-06-18 三菱ケミカル株式会社 洗浄液、洗浄方法及び半導体ウェハの製造方法
JP7192461B2 (ja) 2018-12-11 2022-12-20 三菱ケミカル株式会社 洗浄液、洗浄方法及び半導体ウェハの製造方法
JP2020107641A (ja) * 2018-12-26 2020-07-09 Jsr株式会社 半導体表面処理用組成物及び半導体表面の処理方法
CN113692640A (zh) * 2019-04-15 2021-11-23 三菱化学株式会社 清洗液、清洗方法和半导体晶片的制造方法

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