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WO2018159590A1 - Carte de circuit imprimé isolée à corps assemblé en cuivre/céramique, procédé de production de corps assemblé en cuivre/céramique, et procédé de production de carte de circuit imprimé isolée - Google Patents

Carte de circuit imprimé isolée à corps assemblé en cuivre/céramique, procédé de production de corps assemblé en cuivre/céramique, et procédé de production de carte de circuit imprimé isolée Download PDF

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Publication number
WO2018159590A1
WO2018159590A1 PCT/JP2018/007186 JP2018007186W WO2018159590A1 WO 2018159590 A1 WO2018159590 A1 WO 2018159590A1 JP 2018007186 W JP2018007186 W JP 2018007186W WO 2018159590 A1 WO2018159590 A1 WO 2018159590A1
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WIPO (PCT)
Prior art keywords
copper
active metal
ceramic
circuit board
ceramic substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/007186
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English (en)
Japanese (ja)
Inventor
伸幸 寺▲崎▼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2018010964A external-priority patent/JP6965768B2/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to US16/486,266 priority Critical patent/US10818585B2/en
Priority to KR1020197023690A priority patent/KR102459745B1/ko
Priority to CN201880012794.XA priority patent/CN110382445B/zh
Priority to EP18760572.0A priority patent/EP3590909B1/fr
Publication of WO2018159590A1 publication Critical patent/WO2018159590A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
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    • H01L21/4871—Bases, plates or heatsinks
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    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
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    • Y10T428/12576—Boride, carbide or nitride component

Definitions

  • the present invention relates to a copper / ceramic bonded body, an insulating circuit board, and a copper / ceramic bonded body manufacturing method in which a copper member made of copper or a copper alloy and a ceramic member made of aluminum nitride or silicon nitride are bonded.
  • the present invention relates to a method for manufacturing an insulated circuit board.
  • the power module, the LED module, and the thermoelectric module have a structure in which a power semiconductor element, an LED element, and a thermoelectric element are bonded to an insulating circuit board in which a circuit layer made of a conductive material is formed on one surface of the insulating layer.
  • a power semiconductor element for high power control used for controlling wind power generation, electric vehicles, hybrid vehicles, and the like generates a large amount of heat during operation. Therefore, as a substrate on which the power semiconductor element is mounted, for example, a ceramic substrate made of aluminum nitride, silicon nitride, or the like, and a circuit layer formed by bonding a metal plate having excellent conductivity to one surface of the ceramic substrate, Insulated circuit boards having the above have been widely used.
  • an insulating circuit board there is also provided an insulating circuit board in which a metal layer is formed by bonding a metal plate to the other surface of a ceramic substrate.
  • Patent Document 1 proposes an insulated circuit board in which a first metal plate and a second metal plate constituting a circuit layer and a metal layer are copper plates, and this copper plate is directly bonded to a ceramic substrate by a DBC method. Yes.
  • the copper plate and the ceramic substrate are joined by generating a liquid phase at the interface between the copper plate and the ceramic substrate using a eutectic reaction between copper and copper oxide.
  • Patent Document 2 proposes an insulated circuit board in which a circuit layer and a metal layer are formed by bonding a copper plate to one surface and the other surface of a ceramic substrate.
  • a copper plate is disposed on one surface and the other surface of a ceramic substrate with an Ag—Cu—Ti brazing material interposed therebetween, and heat treatment is performed (so-called copper plate is joined).
  • Active metal brazing method since a brazing material containing Ti, which is an active metal, is used, the wettability between the molten brazing material and the ceramic substrate is improved, and the ceramic substrate and the copper plate are bonded well. .
  • Patent Document 3 proposes a paste containing a powder made of a Cu—Mg—Ti alloy as a bonding brazing material used when bonding a copper plate and a ceramic substrate in a high-temperature nitrogen gas atmosphere.
  • This Patent Document 3 has a structure in which bonding is performed by heating at 560 to 800 ° C. in a nitrogen gas atmosphere, and Mg in the Cu—Mg—Ti alloy sublimes and does not remain at the bonding interface.
  • titanium nitride (TiN) is not substantially formed.
  • the bonding temperature is set to 1065 ° C. or higher (eutectic point temperature of copper and copper oxide or higher). Since it is necessary, the ceramic substrate may be deteriorated during bonding.
  • the brazing material contains Ag, and Ag exists at the joining interface. This was likely to occur and could not be used for high voltage applications.
  • the bonding temperature is relatively high at 900 ° C., there is still a problem that the ceramic substrate is deteriorated.
  • Patent Document 3 when bonding is performed in a nitrogen gas atmosphere using a bonding brazing material made of a paste containing a powder made of a Cu—Mg—Ti alloy, gas remains at the bonding interface. However, there is a problem that partial discharge is likely to occur. Moreover, since the alloy powder is used, the melting state becomes uneven according to the variation in the composition of the alloy powder, and there is a possibility that a region where the interface reaction is insufficient is locally formed. Moreover, the organic substance contained in the paste may remain at the bonding interface, resulting in insufficient bonding.
  • the present invention has been made in view of the above-described circumstances, and is a copper / ceramic bonded body, an insulating circuit board, and the above-described copper which are reliably bonded to each other and have excellent migration resistance.
  • An object of the present invention is to provide a method for producing a ceramic joined body and a method for producing an insulated circuit board.
  • a copper / ceramic bonded body includes a copper member made of copper or a copper alloy and a ceramic member made of aluminum nitride or silicon nitride. 1 or 2 selected from Ti, Zr, Nb, and Hf on the ceramic member side between the copper member and the ceramic member.
  • An active metal nitride layer containing the above active metal nitride is formed, and an Mg solid solution layer in which Mg is dissolved in a Cu matrix is formed between the active metal nitride layer and the copper member.
  • the active metal is present in the Mg solid solution layer.
  • the copper / ceramic bonded body of this configuration between the copper member made of copper or copper alloy and the ceramic member made of aluminum nitride or silicon nitride, Ti, Zr, Nb, Hf are formed on the ceramic member side.
  • An active metal nitride layer containing a nitride of one or more selected active metals is formed. This active metal nitride layer is formed by a reaction between an active metal disposed between a ceramic member and a copper member and nitrogen in the ceramic member, and the ceramic member is sufficiently reacted. .
  • an Mg solid solution layer in which Mg is dissolved in the matrix of Cu is formed, and the active metal is present in the Mg solid solution layer.
  • Mg disposed between the ceramic member and the copper member is sufficiently diffused to the copper member side, and Cu and the active metal are sufficiently reacted. Therefore, the interface reaction sufficiently proceeds at the bonding interface between the copper member and the ceramic member, and a copper / ceramic bonded body in which the copper member and the ceramic member are securely bonded can be obtained. Moreover, since Ag does not exist in the joining interface, it is excellent in migration resistance.
  • an intermetallic compound phase containing Cu and the active metal may be dispersed in the Mg solid solution layer.
  • the active metal exists as an intermetallic compound phase of Cu and the active metal when Ti, Zr, and Hf are included as the active metal.
  • Mg disposed between the ceramic member and the copper member is sufficiently diffused to the copper member side, and Cu and The active metal reacts sufficiently, and a copper / ceramic bonded body in which the copper member and the ceramic member are securely bonded can be obtained.
  • Cu particles are dispersed inside the active metal nitride layer.
  • Cu of the copper member is sufficiently reacted with the ceramic member, and a copper / ceramic bonded body in which the copper member and the ceramic member are firmly bonded can be obtained.
  • Cu particles are a simple substance of Cu or an intermetallic compound containing Cu, and are produced by precipitation of Cu present in the liquid phase when an active metal nitride layer is formed.
  • the active metal may be Ti.
  • a titanium nitride layer is formed as the active metal nitride layer, and an intermetallic compound phase containing Cu and Ti is dispersed in the Mg solid solution layer. It is possible to provide a copper / ceramic bonded body that is bonded and has excellent migration resistance.
  • the rate is preferably 15% or less.
  • the area ratio of the fragile Cu 2 Mg phase is limited to 15% or less, for example, even when ultrasonic bonding or the like is performed, it is possible to suppress the occurrence of cracks or the like at the bonding interface. It becomes.
  • An insulated circuit board is an insulated circuit board in which a copper plate made of copper or a copper alloy is bonded to the surface of a ceramic substrate made of aluminum nitride or silicon nitride, the copper plate and the ceramic substrate Are formed on the ceramic substrate side an active metal nitride layer containing a nitride of one or more active metals selected from Ti, Zr, Nb, and Hf.
  • An Mg solid solution layer in which Mg is dissolved in a matrix of Cu is formed between the physical layer and the copper plate, and the active metal is present in the Mg solid solution layer.
  • the copper plate and the ceramic substrate are reliably bonded and have excellent migration resistance, and can be used with high reliability even under high withstand voltage conditions.
  • an intermetallic compound phase containing Cu and the active metal may be dispersed in the Mg solid solution layer.
  • the active metal exists as an intermetallic compound phase of Cu and the active metal when Ti, Zr, and Hf are included as the active metal.
  • the insulated circuit board by which the copper plate and the ceramic substrate were reliably joined can be obtained by existing as an intermetallic compound phase of Cu and the said active metal in Mg solid solution layer.
  • Cu particles are dispersed inside the active metal nitride layer.
  • Cu of the copper plate is sufficiently reacted with the ceramic substrate, and it is possible to obtain an insulating circuit substrate in which the copper plate and the ceramic substrate are firmly bonded.
  • Cu particles are a simple substance of Cu or an intermetallic compound containing Cu, and are produced by precipitation of Cu present in the liquid phase when an active metal nitride layer is formed.
  • the active metal may be Ti.
  • a titanium nitride layer is formed as the active metal nitride layer, and an intermetallic compound phase containing Cu and Ti is dispersed in the Mg solid solution layer, so that the copper plate and the ceramic substrate are reliably bonded. Therefore, it is possible to provide an insulated circuit board having excellent migration resistance.
  • the area ratio of the Cu 2 Mg phase in the region from the bonding surface of the ceramic substrate to the copper plate side to 50 ⁇ m is 15% between the ceramic substrate and the copper plate.
  • the following is preferable.
  • the area ratio of the fragile Cu 2 Mg phase is limited to 15% or less, for example, even when ultrasonic bonding or the like is performed, it is possible to suppress the occurrence of cracks or the like at the bonding interface. It becomes.
  • a method for producing a copper / ceramic bonded body according to an aspect of the present invention is a method for manufacturing the above-described copper / ceramic bonded body, and includes Ti, Zr, Nb, and the like between the copper member and the ceramic member.
  • a bonding step of heating and bonding in a vacuum atmosphere in a state in which the copper member and the ceramic member stacked via the active metal and Mg are pressed in the stacking direction, wherein in the active metal and Mg arrangement step, within an active metal amount of 0.4 ⁇ mol / cm 2 or more 47.0 ⁇ mol / cm 2 or less, Mg amount 7.0 ⁇ mol / cm 2 or more 143. is characterized in that the [mu] mol / cm 2 within the following ranges.
  • a single active metal element and a single Mg element are disposed between the copper member and the ceramic member, and in a state where they are pressed in the stacking direction, a vacuum atmosphere is provided. Since the heat treatment is performed below, no gas or organic residue remains at the bonding interface. Further, since the active metal simple substance and the Mg simple substance are arranged, there is no variation in composition, and a uniform liquid phase is generated.
  • the active metal and Mg arrangement step within an active metal amount of 0.4 ⁇ mol / cm 2 or more 47.0 ⁇ mol / cm 2 or less, Mg amount 7.0 ⁇ mol / cm 2 or more 143.2 ⁇ mol / cm 2 within the range Therefore, it is possible to sufficiently obtain a liquid phase necessary for the interfacial reaction, and to suppress an unnecessary reaction of the ceramic member. Therefore, it is possible to obtain a copper / ceramic bonded body in which the copper member and the ceramic member are securely bonded. Moreover, since Ag is not used for bonding, a copper / ceramic bonded body excellent in migration resistance can be obtained.
  • the pressure load in the bonding step is in a range of 0.049 MPa to 3.4 MPa
  • the heating temperature in the bonding step is Cu and
  • Mg is laminated in a contact state
  • it is within a range of 500 ° C. or more and 850 ° C. or less
  • Cu and Mg are laminated in a non-contact state
  • it is within a range of 670 ° C. or more and 850 ° C. or less. preferable.
  • the ceramic member, the copper member, the active metal, and Mg can be brought into close contact with each other during heating. Interfacial reaction can be promoted.
  • the heating temperature in the joining step is Cu and Mg laminated in a contact state
  • the heating temperature is 500 ° C. or higher, which is higher than the eutectic temperature of Cu and Mg, and Cu and Mg are laminated in a non-contact state. Is set to 670 ° C. or higher, which is higher than the melting point of Mg, so that a liquid phase can be sufficiently generated at the bonding interface.
  • the heating temperature in the joining step is set to 850 ° C. or less, the eutectic reaction between Cu and the active metal can be suppressed, and the generation of an excessive liquid phase can be suppressed. Further, the thermal load on the ceramic member is reduced, and deterioration of the ceramic member can be suppressed.
  • An insulating circuit board manufacturing method is an insulating circuit board that manufactures an insulating circuit board in which a copper plate made of copper or a copper alloy is bonded to the surface of a ceramic substrate made of aluminum nitride or silicon nitride.
  • An active metal and Mg arrangement in which a single element of two or more active metals selected from Ti, Zr, Nb, and Hf and a single element of Mg are disposed between the copper plate and the ceramic substrate.
  • the amount of active metal is 0.4 ⁇ mol / c.
  • the amount of active metal is 0.4 ⁇ mol / c.
  • the range of 2 or more 47.0 ⁇ mol / cm 2 or less it is characterized in that in the range of Mg content of 7.0 ⁇ mol / cm 2 or more 143.2 ⁇ mol / cm 2 or less.
  • the pressure load in the joining step is in the range of 0.049 MPa to 3.4 MPa, and the heating temperature in the joining step is Cu and Mg.
  • the heating temperature in the joining step is Cu and Mg.
  • the pressure load in the joining step is in the range of 0.049 MPa to 3.4 MPa
  • the ceramic substrate, the copper plate, the active metal, and Mg can be brought into close contact with each other during heating.
  • the reaction can be promoted.
  • the heating temperature in the joining step is Cu and Mg laminated in a contact state
  • the heating temperature is 500 ° C. or higher, which is higher than the eutectic temperature of Cu and Mg, and Cu and Mg are laminated in a non-contact state.
  • the heating temperature in the joining step is set to 850 ° C. or less, the eutectic reaction between Cu and the active metal can be suppressed, and the generation of an excessive liquid phase can be suppressed. Further, the thermal load on the ceramic substrate is reduced, and deterioration of the ceramic substrate can be suppressed.
  • a copper member and a ceramic member are reliably joined, and the copper / ceramic joined body excellent in migration resistance, an insulated circuit board, the manufacturing method of the above-mentioned copper / ceramic joined body, and the insulated circuit board It is possible to provide a manufacturing method.
  • FIG. 1 It is a schematic diagram of the joining interface of the circuit layer (copper member) and ceramic substrate (ceramic member) of the insulated circuit board which is the 2nd Embodiment of this invention. It is a flowchart which shows the manufacturing method of the insulated circuit board which is the 2nd Embodiment of this invention. It is explanatory drawing which shows the manufacturing method of the insulated circuit board which is the 2nd Embodiment of this invention. It is an observation result of the joining interface of the copper plate in the copper / ceramics joined body of Example 5 of this invention, and a ceramic substrate. It is an observation result of the joining interface of the copper plate in the copper / ceramics joined body of Example 5 of this invention, and a ceramic substrate.
  • FIG. 6 is an explanatory diagram showing a method for measuring pull strength in Example 3.
  • FIG. 6 is an explanatory diagram showing a method for measuring pull strength in Example 3.
  • the copper / ceramic bonding body is configured by bonding a ceramic substrate 11 as a ceramic member, a copper plate 22 (circuit layer 12) and a copper plate 23 (metal layer 13) as copper members.
  • the insulating circuit board 10 is used.
  • FIG. 1 shows an insulated circuit board 10 and a power module 1 using the insulated circuit board 10 according to the first embodiment of the present invention.
  • the power module 1 includes an insulating circuit board 10, a semiconductor element 3 bonded to one side (the upper side in FIG. 1) of the insulating circuit board 10 via a first solder layer 2, and the other side of the insulating circuit board 10. And a heat sink 51 joined via a second solder layer 8 (on the lower side in FIG. 1).
  • the insulated circuit board 10 is arranged on the ceramic substrate 11, the circuit layer 12 disposed on one surface (the upper surface in FIG. 1) of the ceramic substrate 11, and the other surface (lower surface in FIG. 1) of the ceramic substrate 11. And a metal layer 13 provided.
  • the ceramic substrate 11 prevents electrical connection between the circuit layer 12 and the metal layer 13, and is composed of aluminum nitride having high insulation in this embodiment.
  • the thickness of the ceramic substrate 11 is set within a range of 0.2 to 1.5 mm, and in this embodiment is set to 0.635 mm.
  • the circuit layer 12 is formed by bonding a copper plate 22 made of copper or a copper alloy to one surface of the ceramic substrate 11.
  • a copper plate 22 made of copper or a copper alloy
  • an oxygen-free copper rolled plate is used as the copper plate 22 constituting the circuit layer 12.
  • a circuit pattern is formed on the circuit layer 12, and one surface (the upper surface in FIG. 1) is a mounting surface on which the semiconductor element 3 is mounted.
  • the thickness of the circuit layer 12 is set within a range of 0.1 mm to 2.0 mm, and is set to 0.6 mm in the present embodiment.
  • the metal layer 13 is formed by bonding a copper plate 23 made of copper or a copper alloy to the other surface of the ceramic substrate 11.
  • a copper plate 23 made of copper or a copper alloy
  • an oxygen-free copper rolled plate is used as the copper plate 23 constituting the metal layer 13.
  • the thickness of the metal layer 13 is set within a range of 0.1 mm to 2.0 mm, and is set to 0.6 mm in the present embodiment.
  • the heat sink 51 is for cooling the insulating circuit board 10 described above, and in the present embodiment, is constituted by a heat radiating plate made of a material having good thermal conductivity. In the present embodiment, the heat sink 51 is made of copper or a copper alloy having excellent thermal conductivity. The heat sink 51 and the metal layer 13 of the insulated circuit board 10 are joined via the second solder layer 8.
  • the ceramic substrate 11 and the circuit layer 12 (copper plate 22), and the ceramic substrate 11 and the metal layer 13 (copper plate 23) are one or two selected from Ti, Zr, Nb, and Hf.
  • the active metal film 24 Ti film in this embodiment
  • a metal nitride layer 31 (in this embodiment, a titanium nitride layer) and an Mg solid solution layer 32 in which Mg is dissolved in a matrix of Cu are stacked.
  • the Mg solid solution layer 32 contains the above active metal.
  • an intermetallic compound phase 33 containing Cu and an active metal (Ti) is dispersed in the Mg solid solution layer 32.
  • Ti is used as the active metal, and examples of the intermetallic compound constituting the intermetallic compound phase 33 containing Cu and Ti include Cu 4 Ti, Cu 3 Ti 2 , Cu 4 Ti 3 , and CuTi. , CuTi 2 , CuTi 3 and the like.
  • the Mg content in the Mg solid solution layer 32 is in the range of 0.01 atomic% to 0.5 atomic%.
  • the thickness of the Mg solid solution layer 32 is in the range of 0.1 ⁇ m to 80 ⁇ m.
  • the Mg content in the Mg solid solution layer 32 is preferably in the range of 0.01 atomic% to 0.3 atomic%, but is not limited thereto.
  • Cu particles 35 are dispersed inside the active metal nitride layer 31 (titanium nitride layer).
  • the particle size of the Cu particles 35 dispersed in the active metal nitride layer 31 (titanium nitride layer) is in the range of 10 nm to 100 nm.
  • the Cu concentration in the region near the interface from the interface with the ceramic substrate 11 to 20% of the thickness of the active metal nitride layer 31 (titanium nitride layer) in the active metal nitride layer 31 (titanium nitride layer) is 0. It is within the range of 3 atomic% or more and 15 atomic% or less.
  • the thickness of the active metal nitride layer 31 is in the range of 0.03 ⁇ m to 1.2 ⁇ m.
  • the Cu concentration in the region near the interface from the interface with the ceramic substrate 11 to 20% of the thickness of the active metal nitride layer 31 (titanium nitride layer) is 0.3.
  • the area ratio of the Cu 2 Mg phase in the region from the bonding surface of the ceramic substrate 11 to the circuit layer 12 side to 50 ⁇ m between the ceramic substrate 11 and the circuit layer 12 is 15% or less.
  • the area ratio of the Cu 2 Mg phase in the region from the bonding surface of the ceramic substrate 11 to the circuit layer 12 side up to 50 ⁇ m is preferably 0.01% or more and 10% or less, but is limited to this. Absent.
  • the above-described Cu 2 Mg phase is a region in which Mg element MAP is obtained with an electron beam microanalyzer, and in the region where the presence of Mg is confirmed, the Mg concentration is in a range of 30 atomic percent to 40 atomic percent. .
  • each of Ti, Zr, Nb, and Hf is selected between the copper plate 22 that becomes the circuit layer 12 and the ceramic substrate 11 and between the copper plate 23 that becomes the metal layer 13 and the ceramic substrate 11.
  • One or more active metal simple substances Ti simple substance in this embodiment
  • Mg simple substance are arranged (active metal and Mg arranging step S01).
  • active metal film 24 (Ti film) and Mg film 25 are formed by depositing active metal (Ti) and Mg, and Mg film 25 is laminated in a non-contact state with copper plate 22. ing.
  • the lower limit of the amount of active metal is preferably 2.8 ⁇ mol / cm 2 or more, and the upper limit of the amount of active metal is preferably 18.8 ⁇ mol / cm 2 or less.
  • the lower limit of the Mg amount is preferably 8.8 ⁇ mol / cm 2 or more, and the upper limit of the Mg amount is preferably 37.0 ⁇ mol / cm 2 or less.
  • the copper plate 22, the ceramic substrate 11, and the copper plate 23 are laminated via the active metal film 24 (Ti film) and the Mg film 25 (lamination step S02).
  • the laminated copper plate 22, ceramic substrate 11, and copper plate 23 are pressurized in the laminating direction, and are loaded into a vacuum furnace and heated to join the copper plate 22, the ceramic substrate 11 and the copper plate 23 (joining step S03).
  • the pressurizing load in the joining step S03 is set in the range of 0.049 MPa to 3.4 MPa.
  • the pressure load in the joining step S03 is preferably in the range of 0.294 MPa to 1.47 MPa, but is not limited thereto.
  • the heating temperature in the bonding step S03 is in the range of 670 ° C. or higher and 850 ° C. or lower higher than the melting point of Mg because Cu and Mg are laminated in a non-contact state.
  • the lower limit of the heating temperature is preferably 700 ° C.
  • the degree of vacuum in the bonding step S03 is preferably in the range of 1 ⁇ 10 ⁇ 6 Pa to 1 ⁇ 10 ⁇ 2 Pa.
  • the holding time at the heating temperature is preferably in the range of 5 min to 360 min. In order to reduce the area ratio of the Cu 2 Mg phase, the lower limit of the holding time at the heating temperature is preferably 60 min or more. The upper limit of the holding time at the heating temperature is preferably 240 min or less.
  • the insulated circuit board 10 is manufactured by the active metal and Mg arrangement step S01, the lamination step S02, and the bonding step S03.
  • the heat sink 51 is bonded to the other surface side of the metal layer 13 of the insulating circuit board 10 (heat sink bonding step S04).
  • the insulating circuit board 10 and the heat sink 51 are laminated via a solder material and inserted into a heating furnace, and the insulating circuit board 10 and the heat sink 51 are soldered via the second solder layer 8.
  • the semiconductor element 3 is joined to one surface of the circuit layer 12 of the insulating circuit board 10 by soldering (semiconductor element joining step S05).
  • soldering semiconductor element joining step S05.
  • the copper plate 22 (circuit layer 12) and the copper plate 23 (metal layer 13) made of oxygen-free copper and aluminum nitride are used.
  • the ceramic substrate 11 is joined via an active metal film 24 (Ti film) and an Mg film 25, and the ceramic substrate 11 and the circuit layer 12 (copper plate 22) and the ceramic substrate 11 and the metal layer 13 (copper plate 23).
  • the active metal nitride layer 31 (titanium nitride layer) formed on the ceramic substrate 11 side and the Mg solid solution layer 32 in which Mg is dissolved in the matrix of Cu are laminated on the bonding interface of FIG. Yes.
  • the active metal nitride layer 31 (titanium nitride layer) is formed by reaction of active metal (Ti) disposed between the ceramic substrate 11 and the copper plates 22 and 23 and nitrogen of the ceramic substrate 11. Therefore, in the present embodiment, the ceramic substrate 11 is sufficiently reacted at the bonding interface. Further, an Mg solid solution layer 32 in which Mg is dissolved in the matrix phase of Cu is formed so as to be stacked on the active metal nitride layer 31 (titanium nitride layer). Of active metals. In the present embodiment, since the intermetallic compound phase 33 containing Cu and active metal (Ti) is dispersed in the Mg solid solution layer 32, the Mg disposed between the ceramic substrate 11 and the copper plates 22 and 23 is reduced. It is sufficiently diffused on the copper plates 22 and 23 side. Therefore, in this embodiment, Cu and the active metal (Ti) are sufficiently reacted.
  • the interface reaction sufficiently proceeds at the bonding interface between the ceramic substrate 11 and the copper plates 22, 23, and the circuit layer 12 (copper plate 22), the ceramic substrate 11, the metal layer 13 (copper plate 23), and the ceramic substrate 11.
  • the insulated circuit board 10 (copper / ceramic bonding body) bonded reliably can be obtained. Further, since Ag does not exist at the bonding interface, it is possible to obtain the insulating circuit substrate 10 (copper / ceramic bonding body) having excellent migration resistance.
  • the Cu particles 35 are dispersed inside the active metal nitride layer 31 (titanium nitride layer), the Cu of the copper plates 22 and 23 sufficiently reacts at the bonding surface of the ceramic substrate 11. is doing. Therefore, it is possible to obtain an insulating circuit substrate 10 (copper / ceramic bonding body) in which the copper plates 22 and 23 and the ceramic substrate 11 are firmly bonded.
  • the area ratio of the Cu 2 Mg phase in the region from the bonding surface of the ceramic substrate 11 to the circuit layer 12 (copper plate 22) side to 50 ⁇ m between the ceramic substrate 11 and the circuit layer 12 (copper plate 22). Is limited to 15% or less, for example, even when ultrasonic bonding or the like is performed, it is possible to suppress the occurrence of cracks or the like at the bonding interface.
  • the active metal (Ti) simple substance (active metal film 24) and the Mg simple substance between the copper plates 22 and 23 and the ceramic substrate 11 are used.
  • An active metal and Mg disposing step S01 for disposing (Mg film 25), a laminating step S02 for laminating the copper plates 22 and 23 and the ceramic substrate 11 through the active metal film 24 and the Mg film 25, and a laminated copper plate 22, the ceramic substrate 11, and the copper plate 23 are joined in a state of being pressurized in the stacking direction by heat treatment and joining in a vacuum atmosphere. It does not remain.
  • the active metal (Ti) simple substance and Mg simple substance are arranged, there is no variation in composition, and a uniform liquid phase is generated.
  • a liquid phase necessary for the interfacial reaction can be sufficiently obtained, and an excessive reaction of the ceramic substrate 11 can be suppressed. Therefore, the insulated circuit board 10 (copper / ceramic joined body) in which the copper plates 22 and 23 and the ceramic substrate 11 are securely joined can be obtained.
  • Ag is not used for joining, the insulated circuit board 10 excellent in migration resistance can be obtained.
  • Active metal content of less than 0.4 ⁇ mol / cm 2 (Ti content is less than 0.02 mg / cm 2), and, when Mg content is 7.0 ⁇ mol / cm less than 2 (less than 0.17 mg / cm 2) is There was a risk that the interfacial reaction would be insufficient and the bonding rate would decrease. Further, when the amount of active metal exceeds 47.0 ⁇ mol / cm 2 (Ti amount exceeds 2.25 mg / cm 2 ), an excessive amount of active metal and a relatively hard intermetallic compound phase 33 are generated excessively. The Mg solid solution layer 32 becomes too hard and the ceramic substrate 11 may be cracked.
  • Mg amount exceeds 143.2 ⁇ mol / cm 2 (greater than 3.48 mg / cm 2) in the case, the decomposition reaction of the ceramic substrate 11 becomes excessive, Al is excessively generated, these and Cu and active metal There was a possibility that a large amount of (Ti) or Mg intermetallic compound was generated, and the ceramic substrate 11 was cracked.
  • the active metal amount 0.4 ⁇ mol / cm 2 or more 47.0 ⁇ mol / cm 2 within the range of (Ti amount 0.02 mg / cm 2 or more 2.25 mg / cm 2 or less of range), and the Mg content of 7.0 ⁇ mol / cm 2 or more 143.2 ⁇ mol / cm 2 within the range of (0.17 mg / cm 2 or more 3.48 mg / cm 2 within the range).
  • the pressing load in the joining step S03 is 0.049 MPa or more
  • the ceramic substrate 11, the copper plates 22, 23, the active metal film 24 (Ti film), and the Mg film 25 are brought into close contact with each other. These interface reactions can be promoted during heating.
  • the pressurization load in joining process S03 shall be 3.4 MPa or less, the crack etc. of the ceramic substrate 11 can be suppressed.
  • the heating temperature in the joining step S03 is set to 670 ° C. or more which is equal to or higher than the melting point of Mg. Can be generated.
  • the heating temperature in the bonding step S03 is 850 ° C. or lower, generation of eutectic reaction between Cu and the active metal (Ti) can be suppressed, and generation of an excessive liquid phase can be suppressed. . Further, the thermal load on the ceramic substrate 11 is reduced, and deterioration of the ceramic substrate 11 can be suppressed.
  • the copper / ceramic bonding body according to this embodiment is an insulating circuit board 110 configured by bonding a ceramic substrate 111 as a ceramic member and a copper plate 122 (circuit layer 112) as a copper member.
  • FIG. 5 shows an insulated circuit board 110 and a power module 101 using the insulated circuit board 110 according to the second embodiment of the present invention.
  • the power module 101 includes an insulating circuit board 110, a semiconductor element 3 bonded to a surface on one side (upper side in FIG. 5) of the insulating circuit board 110 via a solder layer 2, and the other side of the insulating circuit board 110. And a heat sink 151 disposed on the lower side (lower side in FIG. 5).
  • the solder layer 2 is made of, for example, a Sn—Ag, Sn—In, or Sn—Ag—Cu solder material.
  • the insulated circuit board 110 is arranged on the ceramic substrate 111, the circuit layer 112 disposed on one surface (the upper surface in FIG. 5) of the ceramic substrate 111, and the other surface (the lower surface in FIG. 5) of the ceramic substrate 111. And a metal layer 113 provided.
  • the ceramic substrate 111 prevents electrical connection between the circuit layer 112 and the metal layer 113.
  • the ceramic substrate 111 is made of highly insulating silicon nitride.
  • the thickness of the ceramic substrate 111 is set within a range of 0.2 to 1.5 mm, and is set to 0.32 mm in this embodiment.
  • the circuit layer 112 is formed by bonding a copper plate 122 made of copper or a copper alloy to one surface of the ceramic substrate 111.
  • a copper plate 122 made of copper or a copper alloy
  • an oxygen-free copper rolled plate is used as the copper plate 122 constituting the circuit layer 112.
  • a circuit pattern is formed on the circuit layer 112, and one surface (the upper surface in FIG. 5) is a mounting surface on which the semiconductor element 3 is mounted.
  • the thickness of the circuit layer 112 is set within a range of 0.1 mm to 2.0 mm, and is set to 0.6 mm in the present embodiment.
  • the metal layer 113 is formed by joining an aluminum plate 123 to the other surface of the ceramic substrate 111.
  • the metal layer 113 is formed by joining an aluminum plate 123 made of a rolled plate of aluminum (so-called 4N aluminum) having a purity of 99.99 mass% or more to the ceramic substrate 111.
  • This aluminum plate 123 has a 0.2% proof stress of 30 N / mm 2 or less.
  • the thickness of the metal layer 113 (aluminum plate 123) is set within a range of 0.5 mm or more and 6 mm or less, and is set to 2.0 mm in the present embodiment.
  • the metal layer 113 is formed by bonding an aluminum plate 123 to the ceramic substrate 111 using an Al—Si brazing material 128.
  • the heat sink 151 is for cooling the insulating circuit board 110 described above, and in the present embodiment, is constituted by a heat radiating plate made of a material having good thermal conductivity.
  • the heat sink 151 is made of A6063 (aluminum alloy).
  • the heat sink 151 is bonded to the metal layer 113 of the insulating circuit substrate 110 using, for example, an Al—Si brazing material.
  • the ceramic substrate 111 and the circuit layer 112 include an active metal film 124 (this embodiment) made of one or more active metals selected from Ti, Zr, Nb, and Hf. In the embodiment, they are bonded via a Ti film) and an Mg film 125.
  • an active metal nitride layer 131 in this embodiment, a titanium nitride layer formed on the ceramic substrate 111 side, A Mg solid solution layer 132 in which Mg is dissolved in a Cu mother phase is laminated.
  • the Mg solid solution layer 132 contains the active metal described above.
  • an intermetallic compound phase 133 containing Cu and an active metal (Ti) is dispersed in the Mg solid solution layer 132.
  • Ti is used as the active metal, and examples of the intermetallic compound constituting the intermetallic compound phase 133 containing Cu and Ti include Cu 4 Ti, Cu 3 Ti 2 , Cu 4 Ti 3 , CuTi, CuTi 2, CuTi 3, and the like.
  • the Mg content in the Mg solid solution layer 132 is in the range of 0.01 atomic% to 0.5 atomic%.
  • the thickness of the Mg solid solution layer 132 is in the range of 0.1 ⁇ m to 80 ⁇ m.
  • Cu particles 135 are dispersed inside the active metal nitride layer 131 (titanium nitride layer).
  • the particle size of the Cu particles 135 dispersed in the active metal nitride layer 131 (titanium nitride layer) is in the range of 10 nm to 100 nm.
  • the Cu concentration in the region near the interface from the interface with the ceramic substrate 111 to 20% of the thickness of the active metal nitride layer 131 (titanium nitride layer) is 0.3 atom. % Or more and 15 atomic% or less.
  • the thickness of the active metal nitride layer 131 (titanium nitride layer) is in the range of 0.03 ⁇ m to 1.2 ⁇ m.
  • the area ratio of the Cu 2 Mg phase in the region from the bonding surface of the ceramic substrate 111 to the circuit layer 112 side to 50 ⁇ m between the ceramic substrate 111 and the circuit layer 112 is 15% or less.
  • Ti simple substance) and Mg simple substance are arranged (active metal and Mg arrangement step S101).
  • active metal film 124 (Ti film) and Mg film 125 are formed by depositing active metal (Ti) and Mg, and Mg film 125 is formed so as to be in contact with copper plate 122. Yes.
  • Active metal content of less than 0.4 ⁇ mol / cm 2 (Ti content is less than 0.02 mg / cm 2), and, when Mg content is 7.0 ⁇ mol / cm less than 2 (less than 0.17 mg / cm 2) is The interface reaction becomes insufficient, and the bonding rate may be reduced. Further, when the amount of active metal exceeds 47.0 ⁇ mol / cm 2 (Ti amount exceeds 2.25 mg / cm 2 ), an excessive amount of active metal and a relatively hard intermetallic compound phase 133 are generated excessively. The Mg solid solution layer 132 becomes too hard and the ceramic substrate 111 may be cracked.
  • Mg amount exceeds 143.2 ⁇ mol / cm 2 (greater than 3.48 mg / cm 2) in the case, the decomposition reaction of the ceramic substrate 111 becomes excessive, Al is excessively generated, these and Cu and active metal There is a possibility that a large amount of (Ti) or Mg intermetallic compound is generated and the ceramic substrate 111 is cracked.
  • the lower limit of the amount of active metal is preferably 2.8 ⁇ mol / cm 2 or more, and the upper limit of the amount of active metal is preferably 18.8 ⁇ mol / cm 2 or less.
  • the lower limit of the Mg amount is preferably 8.8 ⁇ mol / cm 2 or more, and the upper limit of the Mg amount is preferably 37.0 ⁇ mol / cm 2 or less.
  • the copper plate 122 and the ceramic substrate 111 are laminated via the active metal film 124 (Ti film) and the Mg film 125 (lamination step S102).
  • the active metal film 124 Ti film
  • the Mg film 125 laminated via the active metal film 124 (Ti film) and the Mg film 125 (lamination step S102).
  • an aluminum plate 123 to be the metal layer 113 is laminated on the other surface side of the ceramic substrate 111 with an Al—Si brazing material 128 interposed.
  • the laminated copper plate 122, the ceramic substrate 111, and the aluminum plate 123 are pressurized in the laminating direction, and are inserted into a vacuum furnace and heated to join the copper plate 122, the ceramic substrate 111, and the aluminum plate 123 (joining process).
  • the pressurizing load in the joining step S103 is set in the range of 0.049 MPa to 3.4 MPa.
  • the pressure load in the joining step S103 is preferably in the range of 0.294 MPa to 1.47 MPa, but is not limited thereto.
  • the eutectic temperature of Cu and active metal (Ti) is 500 ° C. or higher which is higher than the eutectic temperature of Mg and Cu.
  • the following is set to 850 ° C. or lower.
  • the lower limit of the heating temperature is preferably 700 ° C. or higher.
  • the heating temperature is set in the range of 600 ° C. to 650 ° C.
  • the degree of vacuum in the bonding step S103 is preferably in the range of 1 ⁇ 10 ⁇ 6 Pa to 1 ⁇ 10 ⁇ 2 Pa.
  • the holding time at the heating temperature is preferably in the range of 5 min to 360 min.
  • the lower limit of the holding time at the heating temperature is preferably 60 min or more.
  • the upper limit of the holding time at the heating temperature is preferably 240 min or less.
  • the insulated circuit board 110 is manufactured by the active metal and Mg arrangement step S101, the stacking step S102, and the bonding step S103.
  • the heat sink 151 is bonded to the other surface side of the metal layer 113 of the insulating circuit board 110 (heat sink bonding step S104).
  • the insulating circuit board 110 and the heat sink 151 are laminated through a brazing material, pressurized in the laminating direction, and inserted into a vacuum furnace for brazing. Thereby, the metal layer 113 of the insulated circuit board 110 and the heat sink 151 are joined.
  • a brazing material having a thickness of 20 to 110 ⁇ m can be used as the brazing material, and the brazing temperature is preferably set lower than the heating temperature in the joining step S103.
  • the semiconductor element 3 is joined to one surface of the circuit layer 112 of the insulating circuit substrate 110 by soldering (semiconductor element joining step S105). Through the above steps, the power module 101 shown in FIG. 5 is produced.
  • the copper plate 122 (circuit layer 112) and the ceramic substrate 111 made of silicon nitride are combined with the active metal film 124 (
  • the active metal nitride layer 131 (titanium nitride layer) formed on the ceramic substrate 111 side is joined to the bonding interface between the ceramic substrate 111 and the circuit layer 112 (copper plate 122).
  • a Mg solid solution layer 132 in which Mg is dissolved in the mother phase of Cu, and an active metal is present in the Mg solid solution layer 132.
  • the circuit layer 112 (copper plate 122) and the ceramic substrate 111 are securely connected as in the first embodiment.
  • Insulated circuit board 110 (copper / ceramic bonded body) bonded to each other can be obtained.
  • Ag does not exist at the bonding interface, an insulating circuit substrate 110 (copper / ceramic bonding body) having excellent migration resistance can be obtained.
  • the Cu particles 135 are dispersed inside the active metal nitride layer 131 (titanium nitride layer), the Cu of the copper plate 122 is sufficiently reacted at the bonding surface of the ceramic substrate 111.
  • an insulating circuit substrate 110 (copper / ceramic bonding body) in which the circuit layer 112 (copper plate 122) and the ceramic substrate 111 are firmly bonded.
  • the area ratio of the Cu 2 Mg phase in the region from the bonding surface of the ceramic substrate 111 to the circuit layer 112 (copper plate 122) side to 50 ⁇ m between the ceramic substrate 111 and the circuit layer 112 (copper plate 122). Is limited to 15% or less, for example, even when ultrasonic bonding or the like is performed, it is possible to suppress the occurrence of cracks or the like at the bonding interface.
  • the liquid phase is formed at the bonding interface between the circuit layer 112 (copper plate 122) and the ceramic board 111, as in the first embodiment.
  • the insulating circuit substrate 110 (copper / ceramic bonding body) in which the copper plate 122 and the ceramic substrate 111 are reliably bonded can be obtained.
  • Ag is not used for bonding, the insulating circuit substrate 110 having excellent migration resistance can be obtained.
  • the heating temperature in the bonding step S103 is set to 500 ° C. or higher which is equal to or higher than the eutectic temperature of Cu and Mg.
  • a liquid phase can be produced.
  • an aluminum plate 123 is laminated on the other surface side of the ceramic substrate 111 via an Al—Si brazing material 128, and the copper plate 122 and the ceramic substrate 111, the ceramic substrate 111 and the aluminum plate 123, As a result, the insulating circuit board 110 including the circuit layer 112 made of copper and the metal layer 113 made of aluminum can be efficiently manufactured. Further, the occurrence of warpage in the insulating circuit board 110 can be suppressed.
  • the copper plate which comprises a circuit layer or a metal layer was demonstrated as an oxygen-free copper rolled plate, it is not limited to this, You may be comprised with other copper or copper alloys.
  • the aluminum plate constituting the metal layer has been described as a rolled plate of pure aluminum having a purity of 99.99 mass%, but is not limited to this, and aluminum having a purity of 99 mass% (2N aluminum) It may be composed of other aluminum or aluminum alloy.
  • the heat sink has been described as an example of the heat sink, it is not limited to this, and the structure of the heat sink is not particularly limited. For example, what has a flow path through which a refrigerant circulates or a cooling fin may be used.
  • a composite material containing aluminum or an aluminum alloy (for example, AlSiC) can also be used as the heat sink.
  • a buffer layer made of aluminum, an aluminum alloy, or a composite material containing aluminum (for example, AlSiC) may be provided between the top plate portion of the heat sink or the heat sink and the metal layer.
  • the active metal and Mg arrangement process has been described as forming the active metal film (Ti film) and the Mg film.
  • the present invention is not limited to this, and the active metal and Mg are co-evaporated. May be. Also in this case, the formed active metal film and Mg film are not alloyed, and the active metal simple substance and Mg simple substance are arranged.
  • the active metal and Mg film are formed by co-evaporation, Mg and Cu are brought into contact with each other, so that the lower limit of the heating temperature in the bonding step can be set to 500 ° C. or higher.
  • Ti is used as the active metal.
  • the present invention is not limited to this, and one or more selected from Ti, Zr, Nb, and Hf is used as the active metal. May be.
  • Zr is used as the active metal
  • Zr exists as an intermetallic compound phase with Cu in the Mg solid solution layer.
  • the intermetallic compound constituting the intermetallic compound phase include Cu 5 Zr, Cu 51 Zr 14 , Cu 8 Zr 3 , Cu 10 Zr 7 , CuZr, Cu 5 Zr 8 , and CuZr 2 .
  • Hf is used as the active metal, Hf exists as an intermetallic compound phase with Cu in the Mg solid solution layer.
  • intermetallic compound constituting this intermetallic compound phase examples include Cu 51 Hf 14 , Cu 8 Hf 3 , Cu 10 Hf 7 , and CuHf 2 .
  • Ti and Zr are used as the active metal, Ti and Zr exist as an intermetallic compound phase containing Cu and the active metal in the Mg solid solution layer.
  • Examples of the intermetallic compound constituting the intermetallic compound phase include Cu 1.5 Zr 0.75 Ti 0.75 .
  • Nb is used as the active metal, Nb exists as a solid solution in the Mg solid solution layer.
  • active metal and Mg arrangement step within an active metal amount in the bonded interface 0.4 ⁇ mol / cm 2 or more 47.0 ⁇ mol / cm 2 or less, Mg amount 7.0 ⁇ mol / cm 2 or more 143.2 ⁇ mol / cm 2
  • the active metal film and the Mg film may be laminated in multiple layers, for example, Mg film / active metal film / Mg film.
  • a Cu film may be formed between the active metal film and the Mg film.
  • the active metal simple substance and the Mg simple substance may be provided with a foil material or may be formed by sputtering.
  • the power module is configured by mounting the power semiconductor element on the circuit layer of the insulating circuit board.
  • the LED module may be configured by mounting an LED element on an insulating circuit board, or the thermoelectric module may be configured by mounting a thermoelectric element on a circuit layer of the insulating circuit board.
  • Example 1 A copper / ceramic bonding body having the structure shown in Table 1 was formed. More specifically, as shown in Table 1, a copper plate on which Ti and Mg are deposited as active metals is laminated on both sides of a 40 mm square ceramic substrate and bonded under the bonding conditions shown in Table 1. A joined body was formed. The thickness of the ceramic substrate was 0.635 mm in the case of aluminum nitride and 0.32 mm in the case of silicon nitride. The vacuum degree of the vacuum furnace at the time of joining was set to 5 ⁇ 10 ⁇ 3 Pa.
  • the bonding interface was observed, and the active metal nitride layer (titanium nitride layer), Mg solid solution layer, intermetallic compound phase, active metal nitride layer (titanium nitride layer) ) In the presence of Cu particles and the Cu concentration. Further, the initial bonding rate of the copper / ceramic bonded body, the cracking of the ceramic substrate after the cooling and heating cycle, and the migration property were evaluated as follows.
  • Mg solid solution layer Using a EPMA apparatus (JXA-8539F manufactured by JEOL Ltd.), an area including the bonding interface (400 ⁇ m ⁇ 600 ⁇ m) was observed under the conditions of a magnification of 2000 times and an acceleration voltage of 15 kV, using the EPMA apparatus (JXA-8539F manufactured by JEOL Ltd.). Quantitative analysis was performed at 10 points with an interval of 10 ⁇ m from the surface of the ceramic substrate (active metal nitride layer surface) toward the copper plate side, and a region having an Mg concentration of 0.01 atomic% or more was defined as an Mg solid solution layer.
  • the Cu concentration is 5 atom% or more and the active metal concentration (Ti concentration) is 16 atoms or more and 90 atom% or less with an average of five points in the quantitative analysis in the region where the presence of the active metal (Ti) is confirmed.
  • a region satisfying the above condition was defined as an intermetallic compound phase.
  • the bonding rate between the copper plate and the ceramic substrate was determined using the following formula using an ultrasonic flaw detector (FineSAT 200 manufactured by Hitachi Power Solutions Co., Ltd.).
  • the initial bonding area was defined as the area to be bonded before bonding, that is, the area of the bonding surface of the copper plate.
  • peeling is indicated by a white portion in the joint, and thus the area of the white portion was taken as the peeling area.
  • (Bonding rate) ⁇ (initial bonding area) ⁇ (peeling area) ⁇ / (initial bonding area) ⁇ 100
  • the electrical resistance between circuit patterns was measured after leaving for 500 hours under the conditions of a distance between circuit patterns of the circuit layer of 0.8 mm, a temperature of 60 ° C., a humidity of 95% RH, and a voltage of DC 50V.
  • the case where the resistance value was 1 ⁇ 10 6 ⁇ or less was judged as short-circuited, and “B” was assigned.
  • the case where the resistance value did not become 1 ⁇ 10 6 ⁇ or less was defined as “A”.
  • the amount of active metal (Ti amount) is 0.1 ⁇ mol / cm 2 (0.005 mg / cm 2 ), which is lower than the range of the present invention, and the initial bonding rate is low. It was. It is presumed that the active metal (Ti) was not present as an intermetallic compound phase in the Mg solid solution layer, and the interfacial reaction was insufficient. In the active metal and Mg arrangement step, cracking of the ceramic substrate was confirmed in Comparative Example 2 in which the amount of active metal (Ti amount) was 66.9 ⁇ mol / cm 2 (3.20 mg / cm 2 ), which is larger than the range of the present invention. It was done. This is presumably because a relatively hard intermetallic compound phase was formed in a large amount.
  • the initial bonding rate was low in Comparative Example 3 in which the amount of Mg was 2.1 ⁇ mol / cm 2 (0.05 mg / cm 2 ), which is less than the range of the present invention. It is presumed that the Mg solid solution layer was not observed and the interface reaction was insufficient. In the active metal and Mg arrangement step, cracks in the ceramic substrate were confirmed in Comparative Example 4 where the Mg content was 220.1 ⁇ mol / cm 2 (5.35 mg / cm 2 ), which is larger than the range of the present invention. It is presumed that the decomposition reaction of the ceramic substrate became excessive, Al was generated excessively, and an intermetallic compound of Cu, active metal (Ti), and Mg was generated in large quantities.
  • Example 1 to 12 of the present invention the initial bonding rate was high, and no cracks in the ceramic substrate were confirmed. Also, the migration was good. As shown in FIG. 9A, FIG. 9B and FIG. 9C, as a result of observing the bonding interface, an active metal nitride layer 31 (titanium nitride layer) and a Mg solid solution layer 32 are observed. It was observed that the intermetallic compound phase 33 was dispersed.
  • Example 2 A copper / ceramic bonding body having the structure shown in Table 3 was formed. More specifically, as shown in Table 3, a copper plate having a single active metal layer and a single Mg layer formed thereon is laminated on both sides of a 40 mm square ceramic substrate, and bonded under the bonding conditions shown in Table 3. Copper / ceramic bonding Formed body. The thickness of the ceramic substrate was 0.635 mm in the case of aluminum nitride and 0.32 mm in the case of silicon nitride. The vacuum degree of the vacuum furnace at the time of joining was set to 5 ⁇ 10 ⁇ 3 Pa.
  • Example 4 The presence or absence of active metal in the active metal nitride layer, Mg solid solution layer, Mg solid solution layer (metal) The presence or absence of an intermetallic phase), the presence or absence of Cu particles in the active metal nitride layer, and the Cu concentration were confirmed. Further, the initial bonding rate of the copper / ceramic bonding body, the cracking of the ceramic substrate after the thermal cycle, and the migration property were evaluated in the same manner as in Example 1. The evaluation results are shown in Table 4.
  • the amount of active metal is 50.4 ⁇ mol / cm 2, which is more than the range of the present invention, and the amount of active metal (Nb amount) is 61.2 ⁇ mol / cm 2.
  • Comparative Example 22 which was larger than the range of the present invention, cracks in the ceramic substrate were confirmed. It is presumed that the amount of active metal present in the Mg solid solution layer was large and the Mg solid solution layer became hard.
  • the amount of active metal (Hf amount) is 0.2 ⁇ mol / cm 2, which is less than the range of the present invention, and the amount of active metal (Hf amount + Nb amount) is 0.2 ⁇ mol / cm 2.
  • Comparative Example 24 which is less than the range of cm 2 and the present invention, the initial bonding rate was low.
  • the copper member and the ceramic member can be reliably bonded and a copper / ceramic bonded body (insulated circuit board) excellent in migration resistance can be provided. .
  • Example 3 An insulated circuit board having the structure shown in Table 5 was formed. More specifically, as shown in Table 5, a copper plate having a single active metal layer and a single Mg layer formed thereon is laminated on both sides of a 40 mm square ceramic substrate and bonded under the bonding conditions shown in Table 5 to have a circuit layer. An insulated circuit board was formed. The thickness of the ceramic substrate was 0.635 mm in the case of aluminum nitride and 0.32 mm in the case of silicon nitride. The vacuum degree of the vacuum furnace at the time of joining was set to 5 ⁇ 10 ⁇ 3 Pa.
  • the area ratio of the Cu 2 Mg phase at the bonding interface between the ceramic substrate and the circuit layer, and the pull strength of the terminals ultrasonically bonded to the circuit layer are as follows. evaluated.
  • the Mg interface in the region (120 ⁇ m ⁇ 160 ⁇ m) including the bonding interface is used at a magnification of 750 times and an acceleration voltage of 15 kV.
  • An area where the Mg concentration was 30 atomic% or more and 40 atomic% or less was obtained as a Cu 2 Mg phase by the five-point average of quantitative analysis in the area where the presence of Mg was confirmed.
  • the area A of the ceramic substrate bonding surface and the region from the bonding surface of the ceramic substrate to the copper plate side up to 50 ⁇ m is obtained.
  • a copper terminal (width: 5 mm) is formed on the circuit layer of the insulated circuit board using an ultrasonic metal bonding machine (60C-904 manufactured by Ultrasonic Industry Co., Ltd.) including the stage 40.
  • Thickness T 1.0 mm, length L 1 : 20 mm, length L 2 : 10 mm
  • the value obtained by dividing the breaking load when the copper terminal is pulled under the condition that the tool speed Y is 5 mm / s and the stage speed X is 5 mm / s by the joining area is shown in Table 5.
  • a copper member and a ceramic member are reliably joined, and the copper / ceramic joined body excellent in migration resistance, an insulated circuit board, the manufacturing method of the above-mentioned copper / ceramic joined body, and the insulated circuit board The manufacturing method of can be provided.

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Abstract

Dans ce corps assemblé en cuivre/céramique, un élément en cuivre comprenant du cuivre ou un alliage de cuivre est relié à un élément en céramique comprenant du nitrure d'aluminium ou du nitrure de silicium, une couche active de nitrure métallique comprenant un nitrure d'un ou plusieurs métaux actifs choisis parmi Ti, Zr, Nb et Hf est formée sur le côté de l'élément en céramique entre l'élément en cuivre et l'élément en céramique, une couche de solution solide de Mg obtenue par dissolution de Mg dans une phase de matrice de Cu est formée entre la couche de nitrure de métal actif et l'élément de cuivre, et un métal actif est présent dans la couche de solution solide de Mg.
PCT/JP2018/007186 2017-02-28 2018-02-27 Carte de circuit imprimé isolée à corps assemblé en cuivre/céramique, procédé de production de corps assemblé en cuivre/céramique, et procédé de production de carte de circuit imprimé isolée Ceased WO2018159590A1 (fr)

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US16/486,266 US10818585B2 (en) 2017-02-28 2018-02-27 Copper/ceramic joined body, insulated circuit board, method for producing copper/ceramic joined body, and method for producing insulated circuit board
KR1020197023690A KR102459745B1 (ko) 2017-02-28 2018-02-27 구리/세라믹스 접합체, 절연 회로 기판, 및, 구리/세라믹스 접합체의 제조 방법, 절연 회로 기판의 제조 방법
CN201880012794.XA CN110382445B (zh) 2017-02-28 2018-02-27 铜-陶瓷接合体、绝缘电路基板、铜-陶瓷接合体的制造方法及绝缘电路基板的制造方法
EP18760572.0A EP3590909B1 (fr) 2017-02-28 2018-02-27 Carte de circuit imprimé isolée à corps assemblé en cuivre/céramique, procédé de production de corps assemblé en cuivre/céramique, et procédé de production de carte de circuit imprimé isolée

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JP2021072447A (ja) * 2019-10-30 2021-05-06 三菱マテリアル株式会社 銅／セラミックス接合体、絶縁回路基板、及び、銅／セラミックス接合体の製造方法、絶縁回路基板の製造方法
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JP2021091595A (ja) * 2019-12-02 2021-06-17 三菱マテリアル株式会社 銅／セラミックス接合体、絶縁回路基板、及び、銅／セラミックス接合体の製造方法、絶縁回路基板の製造方法
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CN114787106A (zh) * 2019-12-06 2022-07-22 三菱综合材料株式会社 铜-陶瓷接合体、绝缘电路基板及铜-陶瓷接合体的制造方法、绝缘电路基板的制造方法
CN114787106B (zh) * 2019-12-06 2023-07-14 三菱综合材料株式会社 铜-陶瓷接合体、绝缘电路基板及铜-陶瓷接合体的制造方法、绝缘电路基板的制造方法
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US12347744B2 (en) * 2020-07-27 2025-07-01 Kabushiki Kaisha Toshiba Bonded body including titanium alloy at bonding boundary
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CN120261293A (zh) * 2025-03-31 2025-07-04 江苏富乐华功率半导体研究院有限公司 一种高可靠性的高精度多层陶瓷基板的制备方法

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