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WO2018155415A1 - Procédé de formation de film, dispositif de formation de film, procédé de production pour structure d'élément et dispositif de production pour structure d'élément - Google Patents

Procédé de formation de film, dispositif de formation de film, procédé de production pour structure d'élément et dispositif de production pour structure d'élément Download PDF

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Publication number
WO2018155415A1
WO2018155415A1 PCT/JP2018/005925 JP2018005925W WO2018155415A1 WO 2018155415 A1 WO2018155415 A1 WO 2018155415A1 JP 2018005925 W JP2018005925 W JP 2018005925W WO 2018155415 A1 WO2018155415 A1 WO 2018155415A1
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WO
WIPO (PCT)
Prior art keywords
resin material
film
layer
substrate
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/005925
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English (en)
Japanese (ja)
Inventor
健介 清
信 青代
高橋　明久
貴浩 矢島
裕子 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2019501327A priority Critical patent/JP6653408B2/ja
Priority to KR1020197016816A priority patent/KR102234630B1/ko
Priority to CN201880010348.5A priority patent/CN110268091B/zh
Publication of WO2018155415A1 publication Critical patent/WO2018155415A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Definitions

  • the present invention relates to a film forming method, a film forming apparatus, an element structure manufacturing method, and an element structure manufacturing apparatus, and more particularly to manufacturing an element structure having a laminated structure that protects devices and the like from oxygen, moisture, and the like. It relates to a technique suitable for use.
  • This application claims priority based on Japanese Patent Application No. 2017-030318 for which it applied to Japan on February 21, 2017, and uses the content here.
  • an organic EL (Electro Luminescence) element or the like is known as an element including a compound that easily deteriorates due to moisture or oxygen.
  • Patent Document 1 described below describes a light-emitting element that includes a protective film formed of a laminated film of an inorganic film and an organic film on an upper electrode layer.
  • An acrylic resin or the like is used as the organic film.
  • a method of forming an organic film a method of forming a resin film by vaporizing and supplying a resin material, liquefying the resin material on a substrate, and polymerizing the resin material by irradiating the resin material with UV light Is being considered.
  • the resin material may not completely evaporate in the vaporizer, and the resin material liquid may remain in the heating portion, or the resin material may be solidified by heating.
  • the vaporization efficiency deteriorates over time, and even if the supply amount of the resin material to the vaporizer is constant, the vapor supply amount supplied from the vaporizer to the film formation chamber gradually decreases, and the deposition ( There was a problem that the film formation rate was gradually deteriorated. In particular, when the processing time is long, there is a problem that the film formation state is not stable due to the reduction of the vaporization efficiency.
  • the present invention has been made in view of the above circumstances, and aims to achieve at least one of the following objects. 1. To improve the supply state of resin material vapor. 2. To prevent film formation defects caused by a decrease in supply amount. 3. Stabilize the deposition rate. 4). Ensure barrier properties.
  • the film forming method according to the first aspect of the present invention is a film forming method for forming a resin material film by spraying a liquid resin material on a heating portion to vaporize the vaporized material and supplying the vaporized vapor onto the substrate. Then, the film forming conditions are controlled so as to compensate for the vaporization rate of the resin material, which decreases according to the vaporization integrated amount, which is the total amount of the resin material supplied to the heating unit.
  • the film forming conditions include: a film forming time for forming the resin material film per one substrate; or spraying a liquid resin material on the heating unit. The supply amount per unit time may be included.
  • the heating unit may have an inclined surface.
  • the resin material may be an ultraviolet curable acrylic resin material.
  • the film forming apparatus according to the second aspect of the present invention is a film forming apparatus that forms a resin material film by spraying a liquid resin material on a heating section to vaporize it, and supplying the vaporized vapor onto the substrate.
  • the element structure manufacturing method is a first method of forming a first layer made of an inorganic material, covering a functional layer disposed on one surface of a substrate and having a local protrusion. A liquid resin material is vaporized and supplied to form a resin material film made of the resin material so as to cover the first layer that covers the step (step A) and one surface side (one main surface side) of the substrate.
  • step B A second step (step B) and a part of the resin material film remaining at a position including a boundary portion between the outer surface of the convex portion and one surface of the substrate when the first layer is viewed from a side cross section. And removing the resin material film at a position different from the position where the resin material film remains, a part of the remaining resin material film, and the resin material film Forming a second layer made of an inorganic material so as to cover the first layer exposed by the removal;
  • process (step D) a, in the second step, controls the supply state to compensate the resin material decreases according to vaporize the duration of vaporized the resin material.
  • the resin material film is formed according to the supply amount of the resin material corresponding to the supply time of the vaporized resin material.
  • the film time may be lengthened.
  • the vaporized resin material is supplied into the film formation chamber during the film formation process of the resin material film in the second step, and the resin At the time of non-deposition processing of the material film, the vaporized resin material is sent to the outside of the film formation chamber, and an integrated amount obtained by integrating the supply amount of the resin material as the vaporization amount of the resin material is obtained.
  • the film formation time of the resin material film is controlled according to the amount.
  • the first layer is viewed from a side cross section so that a region including a top portion on the outer surface of the convex portion is exposed.
  • the resin material film may be removed.
  • the third step may use a dry etching method as a method for removing the resin material film.
  • a change in a specific condition among conditions for etching the resin material film may be detected, and the detected result may be used as an end point of the etching process.
  • the device for manufacturing an element structure according to the fourth aspect of the present invention forms a first layer made of an inorganic material that covers a functional layer disposed on one side of a substrate and has a local protrusion.
  • a resin component for forming a resin material film made of the resin material, which covers the first layer, is capable of supplying the resin material vaporized from a vaporizer that heats and vaporizes the liquid resin material.
  • a part of the resin material film is left at a position including a boundary portion between an outer surface of the convex portion and one surface of the substrate when the film portion and the first layer are viewed from a side cross section, and the resin material film A localized processing section for removing the resin material film at a position different from the position where the resin remains, the convex portion on one surface side of the substrate, a part of the remaining resin material film, and the removal
  • a supply pipe that is connected to a vaporization tank provided in the vaporizer and supplies the resin material vaporized during film formation to the resin film formation part, and the vaporization tank And an external pipe for passing the resin material vaporized during the non-film forming process to the outside of the resin film forming unit, and a switching valve for switching between the supply pipe and the external pipe.
  • a controller that controls a supply time for supplying the resin material to the resin film forming unit so as to compensate for the resin material that decreases
  • the film forming method of the first aspect of the present invention it is possible to compensate for the resin material that decreases in accordance with the vaporization duration of the vaporized resin material, and the amount of the resin material supplied is determined as the film formation time elapses. Therefore, it is possible to make the film formation rate constant which compensates to stabilize regardless of the accumulated amount of vaporization, and to make the film formation characteristics such as film thickness uniformity as desired. be able to.
  • the film forming condition includes: a film forming time for forming the resin material film per substrate; or a unit for spraying a liquid resin material onto the heating unit. Includes at least one of the supply per hour. Accordingly, it is possible to make the film formation rate uniform by lengthening the film formation time or gradually increasing the supply amount per unit time for spraying the liquid resin material onto the heating unit.
  • the heating unit has an inclined surface, so that the rate at which the supply amount of the resin material decreases in accordance with the integrated amount of vaporization can be reduced.
  • the resin material may be an ultraviolet curable acrylic resin material.
  • the film formation time is determined with reference to the recording unit that records the vaporization operation data including the integrated amount of the resin material supplied to the heating unit, and the vaporization operation data.
  • the control unit may determine at least one of a lengthening time or an increasing amount for increasing the supply amount per unit time for spraying the liquid resin material onto the heating unit.
  • the supply state is controlled so as to compensate for the resin material that decreases according to the vaporization duration of the vaporized resin material.
  • the supply amount of the resin material is stabilized regardless of the passage of the film formation time, and the supply amount of the resin material is not dependent on the film formation order and the film formation time even when the film formation is performed sequentially on a plurality of substrates. It is possible to stabilize and prevent the film formation rate from changing. In addition, it is possible to stabilize the film formation rate and form a resin material film having desired film characteristics, and thereby the localized resin material film (resin material) allows the first layer and the first layer to be formed. It is possible to reliably seal the functional layer with the two layers and to manufacture an element structure with high barrier characteristics.
  • the resin material film is formed according to the supply amount of the resin material corresponding to the supply time of the vaporized resin material.
  • the vaporized resin material is supplied during the film forming process of the resin material film in the second step, and is vaporized during the non-film forming process.
  • the resin material is passed outside the film formation chamber.
  • the third step when the first layer is viewed from a side cross section, a region including the top portion of the outer surface of the convex portion is exposed. Then, the resin material film is removed. Thereby, the localized resin material film (resin material) reliably seals the functional layer with the first layer and the second layer, and without causing unnecessary damage to the first layer, the resin material film ( It is possible to easily remove unnecessary portions of the resin material and localize only the portions necessary for sealing. As a result, an element structure having high barrier characteristics can be manufactured.
  • the third step uses a dry etching method as a method for removing the resin material film, and thus does not cause unnecessary damage to the first layer. Unnecessary portions of the resin material film can be removed, and only the portions necessary for sealing can be localized.
  • the third step detects a change in a specific condition among the conditions for etching the resin material film and uses it as an end point of the etching process, thereby reliably removing the resin material film, Unnecessary damage to the first layer can be reduced.
  • the resin material supply amount is stabilized regardless of the elapse of the film formation time, and the resin material is formed even when the film is sequentially formed on the plurality of substrates.
  • the supply amount of the film can be stabilized regardless of the film formation sequence and the film formation time, and fluctuations in the film formation rate can be prevented.
  • the resin material supply state is stabilized, the film formation failure due to the supply amount fluctuation is prevented, the film formation rate is stabilized, and the resin material film is stably formed. An effect that a film can be formed can be achieved.
  • FIG. 1 It is a schematic diagram showing an apparatus for manufacturing an element structure according to the first embodiment of the present invention. It is a schematic cross section which shows the resin film-forming part in the manufacturing apparatus of the element structure which concerns on 1st Embodiment of this invention. It is a flowchart which shows the manufacturing method of the element structure which concerns on 1st Embodiment of this invention. It is a schematic sectional drawing which shows the element structure manufactured by the manufacturing apparatus of the element structure which concerns on 1st Embodiment of this invention. It is a top view which shows the element structure manufactured by the manufacturing apparatus of the element structure which concerns on 1st Embodiment of this invention. It is an expanded sectional view of the important section of the above-mentioned element structure.
  • FIG. 1 is a schematic diagram showing an element structure manufacturing apparatus (film forming apparatus) according to this embodiment.
  • FIG. 2 is a schematic diagram showing an element structure manufacturing apparatus according to this embodiment.
  • FIG. 3 is a flowchart showing a method for manufacturing an element structure according to the present embodiment.
  • reference numeral 1000 denotes an element structure manufacturing apparatus.
  • the element structure manufacturing apparatus 1000 manufactures an element structure such as an organic EL element, as will be described later.
  • the manufacturing apparatus 1000 includes a first layer forming unit 201, a resin film forming unit 100, a localization processing unit 202, a second layer forming unit 203, and a functional layer that becomes an organic EL layer.
  • the functional layer forming unit 204 for forming the core, the core chamber 200, and a load lock chamber 210 connected to the outside.
  • the core chamber 200 is connected to the first layer forming unit 201, the resin film forming unit 100, the localization processing unit 202, the second layer forming unit 203, the functional layer forming unit 204, and the load lock chamber 210.
  • a substrate transferred from another device or the like to the element structure manufacturing apparatus 1000 is inserted.
  • a substrate transfer robot (not shown) is disposed in the core chamber 200.
  • the core chamber 200, the film forming chambers 100, 201, 202, 203, 204 and the load lock chamber 210 constitute a vacuum chamber to which a vacuum exhaust system (not shown) is connected.
  • each manufacturing process can be automated, and at the same time, efficient manufacturing can be performed using a plurality of film formation chambers. It is possible to improve productivity.
  • the first layer forming portion 201 covers the functional layer 3 disposed on the one surface side 2a of the substrate 2 in the element structure 10 to be described later, and has a local convex portion, such as silicon nitride (SiN x ).
  • the first layer 41 made of the inorganic material is formed.
  • the first layer formation unit 201 is a film formation chamber in which the first layer 41 is formed by, for example, a CVD (Chemical Vapor Deposition) method, a sputtering method, an ALD (Atomic Layer Deposition) method, or the like.
  • the functional layer forming unit 204 forms the functional layer 3 in the element structure 10 described later. Note that the functional layer forming unit 204 may be provided outside the load lock chamber 210.
  • the second layer forming unit 203 forms a second layer 42 made of an inorganic material like the first layer 41 so as to cover the first layer 41 and the resin material 51 in the element structure 10 to be described later. It is a room.
  • the 2nd layer 42 and the 1st layer 41 consist of the same material
  • the 2nd layer formation part 203 and the 1st layer formation part 201 are set as the same structure, or one film-forming chamber ( The second layer 42 and the first layer 41 can also be formed using a common film formation chamber.
  • the forming units 201 and 203 and the film forming chamber are In addition to the functions described above, the functions of the localization processing unit 202 described later can be provided.
  • a substrate on which a resin film is formed is loaded into a plasma CVD apparatus, and plasma is generated by introducing an oxidizing gas, thereby etching the resin film and localizing the resin film to form a resin material. it can. Thereafter, the second layer 42 can be formed in the plasma CVD apparatus as it is.
  • the resin film forming unit 100 supplies the vaporized resin material to the inside of the resin film forming unit 100, forms a resin material film made of a resin material on the first layer 41, and cures the resin material film to form a resin.
  • a film formation chamber for forming a film for forming a film.
  • the resin film forming unit 100 includes a chamber 110 whose internal space can be depressurized, a vaporizer 300 that supplies the vaporized resin material to the chamber 110 (processing chamber), and a control unit 400. .
  • the internal space of the chamber 110 is composed of an upper space 107 and a lower space 108 as will be described later.
  • An unillustrated evacuation device (evacuation means, vacuum pump, etc.) is connected to the chamber 110, and the evacuation device can evacuate the gas in the internal space so that the internal space of the chamber 110 becomes a vacuum atmosphere. It is configured.
  • a shower plate 105 is disposed in the internal space of the chamber 110, and an upper space 107 is formed above the shower plate 105 in the chamber 110.
  • the shower plate 105 is also formed of a member that can transmit ultraviolet light, the ultraviolet light that has passed through the top plate 120 from the irradiation device 122 and introduced into the upper space 107 further passes through the shower plate 105. Then, it can proceed to the lower space 108 located below the shower plate 105.
  • an acrylic material film (resin material film) formed on the substrate S which will be described later, is irradiated with ultraviolet light after film formation to cure the acrylic material film and form an acrylic resin film (resin film). Is possible.
  • the chamber 110 is provided with a heating device (not shown).
  • the temperature of the inner wall surface of the chamber 110 constituting the upper space 107 and the lower space 108 can be set to be equal to or higher than the vaporization temperature of the resin material, preferably about 40 to 250 ° C., and is controlled by a heating device.
  • a stage 102 (substrate holding part) on which the substrate S is placed is disposed.
  • stage 102 the position where the substrate is to be placed on the surface is predetermined.
  • the stage 102 is disposed in the chamber 110 with its surface exposed.
  • Reference numeral S denotes a substrate disposed at a predetermined position on the surface of the substrate stage 102.
  • the stage 102 is provided with a substrate cooling device 102a for cooling the substrate S.
  • the substrate cooling device 102 a supplies a coolant into the stage 102 to cool the substrate S on the upper surface of the stage 102.
  • the temperature of the substrate S is controlled by the cooling device 102a built in the stage 102 (substrate holding unit) on which the substrate S is placed, and is not more than the vaporization temperature of the resin material, preferably not more than zero degree (0 ° C.).
  • the temperature is controlled to about ⁇ 30 ° C. to 0 ° C.
  • a shower plate 105 is provided on the upper side of the stage 102 so as to face the entire surface of the stage 102.
  • the shower plate 105 is composed of a plate-like member made of an ultraviolet light transmitting material such as quartz provided with a large number of through holes, and divides the internal space of the chamber 110 into an upper space and a lower space.
  • a mask (not shown) is provided in the lower space 108, and the position of this mask can be set to a predetermined position in film formation.
  • the mask is movable so as to retract from the substrate.
  • the upper space 107 of the chamber 110 communicates with the vaporizer 300 via a pipe 112 (resin material supply pipe) and a valve 112V.
  • the vaporized resin material can be supplied to the upper space 107 of the chamber 110 through the resin material supply pipe 112.
  • One end of a resin material bypass pipe 113 having a valve 113V is connected to a position closer to the vaporizer 300 than the valve 112V of the resin material supply pipe 112 (first pipe).
  • the other end of the resin material bypass pipe 113 (second pipe) is connected to the outside through an exhaust pipe 114, and gas can be exhausted through the resin material bypass pipe 113.
  • the exhaust pipe 114 is connected to a liquefaction recovery device, and can liquefy and recover the resin material.
  • the opening / closing drive of the valve 112V and the valve 113V is controlled by the control unit 400.
  • the control unit 400 has a film forming state in which the vaporized resin material from the vaporizer 300 is supplied into the chamber 110, and a non-generated state in which the vaporized resin material from the vaporizer 300 is exhausted to the outside and not supplied into the chamber 110.
  • the film state is controlled to be switchable.
  • the valve 112V, the valve 113V, and the control unit 400 have a selection function of supplying the resin material into the chamber 110 through the resin material supply pipe 112 or exhausting the resin material to the outside of the chamber 110 through the resin material bypass pipe 113.
  • the switch part which has is comprised.
  • the vaporizer 300 can supply the vaporized resin material to the chamber 110. As illustrated in FIG. 2, the vaporizer 300 includes a vaporization tank 130, a discharge unit 132, and a resin material raw material container 150.
  • the vaporization tank 130 has an internal space for vaporizing the liquid resin material, and a discharge part 132 for spraying the liquid resin material is disposed above the internal space.
  • the vaporization tank 130 is formed in a substantially cylindrical shape, but may have other cross-sectional shapes.
  • the inner surface of the vaporization tank 130 can be made of, for example, SUS, Al, or the like.
  • a resin material liquid supply pipe 140 connected to the resin material raw material container 150 via a valve 140V and a carrier gas supply pipe 130G for supplying a carrier gas such as nitrogen gas.
  • the other end of the resin material liquid supply pipe 140 is connected to the resin material raw material container 150 and is located inside the liquid resin material stored in the resin material raw material container 150.
  • a pressurized gas supply pipe 150G for supplying a material liquid such as nitrogen gas is connected to the resin material raw material container 150, and the liquid resin material pressurized by increasing the internal pressure of the resin material raw material container 150 is a resin.
  • the liquid can be supplied to the material liquid supply pipe 140.
  • the discharge part 132 is configured to spray the liquid resin material supplied from the resin material liquid supply pipe 140 into the internal space of the vaporization tank 130 together with the carrier gas.
  • the discharge part 132 is provided in the approximate center position of the top part of the vaporization tank 130.
  • a heating unit 135 having an inclined surface may be provided in the internal space of the vaporization tank 130 and the resin material may be sprayed toward the heating member.
  • the vaporization tank 130 is provided with a vacuum gauge PG so that the internal pressure can be measured.
  • a temperature control device for controlling the temperature of the surface in contact with the internal space is provided on the side wall of the vaporizing tank 130, and specifically, a heater for heating the side wall of the vaporizing tank 130 is provided.
  • the resin material supply pipe 112 (first pipe) connected to the vaporization tank 130 is also provided with a heater as a similar temperature adjusting device.
  • This heater is wound around a resin material supply pipe (first pipe) so that the vaporized resin material does not condense on the wall surface.
  • the resin material bypass pipe 113 can be provided with a heater as a similar temperature adjusting device.
  • These heaters can prevent the liquefaction of the resin material by setting the surface temperature exposed to the vaporized resin material to be higher than the vaporization temperature of the resin material. At the same time, the temperature is set so as to reduce the heat solidification of the resin material as much as possible.
  • the vaporization tank 130 and the resin material supply pipe 112 are heated by a heater.
  • control unit 400 closes the valve 112V so that the gas cannot flow into the resin material supply pipe 112, and opens the valve 113V so that the gas can flow into the resin material bypass pipe 113. .
  • the internal pressure of the resin material raw material container 150 is increased, and the liquid resin material supplied from the resin material liquid supply pipe 140 is sprayed from the discharge unit 132 to the internal space of the vaporization tank 130 together with the carrier gas. At this time, the resin material and the carrier gas supplied to the discharge unit 132 can be further heated.
  • the resin material sprayed into the internal space of the vaporizing tank 130 together with the carrier gas from the discharge unit 132 is vaporized inside the heated vaporizing tank 130.
  • an ultraviolet curable resin material may be used as the resin material.
  • the ultraviolet curable resin material may be partially polymerized or altered by heating or the like.
  • the resin that has changed in this way has an evaporation temperature that does not evaporate, and may remain on the surface of the heating unit 135 or the vaporization tank 130 and the evaporation amount may fluctuate.
  • the control unit 400 opens the valve 112V, allows the gas to flow into the resin material supply pipe 112, and closes the valve 113V.
  • the state is such that gas cannot flow into the resin material bypass pipe 113. Thereby, the vaporized resin material is supplied to the chamber 110, and the film formation process can be performed.
  • the resin material can be supplied to the resin material supply pipe 112 (first pipe) and the resin material bypass pipe 113 (second pipe).
  • the supply of the resin material to the pipe) can be selected. For this reason, since the supply amount of the vaporized resin material supplied to the chamber 110 can be stabilized, the film formation rate at the start of film formation can be stabilized.
  • the resin film forming unit 100 performs film formation of an ultraviolet curable acrylic resin material having a vaporization temperature of about 40 to 250 ° C. and ultraviolet irradiation for curing the formed resin material in the same chamber 110. It is configured to be possible. Thereby, it becomes possible to perform any processing process with the same apparatus structure, and it can improve productivity.
  • the process B in the element structure manufacturing method (film forming method) includes a calibration curve acquisition process S01, a compensation time setting process S02, an external exhaust gas switching process S03, a vaporization start process S04, a vaporization duration measurement process S05, and a film thickness setting process.
  • S06 supply time setting step S07, substrate carry-in step S08, supply start step S09, supply time measurement step S10, supply stop step S11, substrate carry-out step S12, and vaporization stop step S13.
  • the film thickness is measured with a constant film formation time per substrate as shown in FIG. 15 with respect to the amount of resin material supplied from the vaporizer 300 as shown in FIG. To do.
  • film formation is sequentially performed on the plurality of substrates S so as to have the same film formation processing time.
  • the amount of decrease in film thickness (reduction amount) at each time is measured as a calibration curve.
  • the compensation time setting step S02 shown in FIG. 3 corresponds to the integrated resin material supply amount so as to compensate the decrease with respect to the initially set film forming processing time with respect to the calibration curve acquired in the calibration curve acquisition step S01. Then, a compensation time for increasing the film formation processing time per sheet is set. This compensation time is set so as to compensate for the decrease in the film formation rate with respect to the target film thickness.
  • the change tendency of the compensation time or the film formation rate is stored in the control unit.
  • the controller 400 switches the open / close state of the valve 112V and the valve 113V, and the resin material is supplied from the vaporizer 300 to the resin material bypass pipe 113 (second pipe). Supply.
  • the vaporization start process S04 shown in FIG. 3 in this state, the vaporization of the resin material is started in the vaporizer 300 as described above.
  • the vaporization duration measurement step S05 shown in FIG. 3 measurement of the vaporization duration that is a reference for calculating the compensation time is started.
  • the target film thickness and the compensation time from the vaporization duration at the start of film formation are calculated.
  • the supply time which is the film formation time per time, is set to be longer corresponding to the vaporization duration of the vaporized resin material.
  • the substrate S is loaded into the resin film forming unit 100 in the substrate loading step S08 shown in FIG.
  • the controller 400 switches the open / close state of the valve 112V and the valve 113V, and supplies the resin material from the vaporizer 300 to the resin material supply pipe 112 (first pipe). Then, film formation is started. At the same time, as the supply time measurement step S10 shown in FIG. 3, measurement of the resin material supply amount converted as the formed film thickness is started.
  • the controller 400 switches the open / close state of the valve 112V and the valve 113V according to the supply time set in the supply time setting process S07, and the resin material is supplied from the vaporizer 300. Is supplied to the resin material bypass pipe 113 (second pipe) to obtain a target film thickness, and the film formation is completed.
  • the substrate carry-out step S12 is repeated a plurality of times from the film thickness setting step S06.
  • the vaporization duration as the vaporization duration measurement step S05 is integrated, and according to this value, the compensation time is calculated again as the supply time setting step S07 every time, and the switching time in the supply stop step S11 is controlled. .
  • the supply time that is the film formation time is increased. Set to compensate for supply time.
  • the vaporization in the vaporizer 300 is stopped and the measurement of the vaporization duration is ended.
  • the film thickness setting step S06 and the supply time setting step S07 are the execution times of the steps performed after the substrate carry-in step S08, that is, before the step of actual film formation. The order is not limited to the order of the steps described above. Further, even if the vaporizer 300 is not continuously operated, the vaporization efficiency is reduced by integrating the vaporization time from the latest cleaning. Even if the operation and stop of the vaporizer 300 are repeated, the reduction amount of the vaporization efficiency can be calculated by integrating the vaporization time.
  • the supply state is controlled so as to compensate for the supply of the vaporized resin material that decreases according to the processing time as described above.
  • the film formation rate by the resin material is stabilized regardless of the elapse of the vaporization duration, and as shown in FIG. 16, the film formation rate by the resin material is achieved even when the film formation is sequentially performed on the plurality of substrates S. Stabilizes regardless of the number of times of film formation and the film formation time. Therefore, it is possible to prevent fluctuations in film formation characteristics from occurring and to prevent fluctuations in film characteristics (film thickness).
  • control of each process can be performed by the control unit 400, and the calculation unit of the control unit 400 also performs calculation of a calibration curve, calculation of film formation time, and integration. Furthermore, the storage unit included in the control unit 400 also stores necessary data.
  • FIG. 4 is a schematic cross-sectional view showing the element structure according to the present embodiment.
  • FIG. 5 is a plan view showing the element structure of FIG.
  • FIG. 6 is an enlarged view showing a main part of the element structure.
  • the X-axis, Y-axis, and Z-axis directions indicate triaxial directions orthogonal to each other.
  • the X-axis and Y-axis directions are orthogonal to each other, and the Z-axis direction is vertical. Show.
  • the element structure 10 includes a substrate 2 including a device layer 3 (functional layer), a silicon nitride layer that is formed on the surface 2a of the substrate 2 and covers the functional layer 3, and has local protrusions.
  • the first inorganic material layer 41 (first layer) made of an inorganic material such as a material (SiN x ) and the second inorganic material in the same manner as the first layer 41 so as to cover the first inorganic material layer 41 A layer 42 (third layer).
  • the element structure 10 includes a light emitting element having an organic EL light emitting layer.
  • the substrate 2 has a front surface 2a (first surface) and a back surface 2c (second surface), and is composed of, for example, a glass substrate or a plastic substrate.
  • substrate 2 is not specifically limited, In this embodiment, it forms in a rectangular shape.
  • substrate 2 are not specifically limited, According to the magnitude
  • a plurality of element structures 10 are manufactured from an assembly of the same elements manufactured on one large substrate S.
  • Device layer 3 (functional layer) is composed of an organic EL light emitting layer including an upper electrode and a lower electrode.
  • the device layer 3 is composed of various functional elements including materials that easily deteriorate due to moisture, oxygen, and the like, such as a liquid crystal layer in a liquid crystal element and a power generation layer in a power generation element. Also good.
  • the device layer 3 is formed in a predetermined region of the surface 2a of the substrate 2.
  • the planar shape of the device layer 3 is not particularly limited and is formed in a substantially rectangular shape in the present embodiment, but other shapes such as a circular shape and a linear shape may be adopted.
  • the device layer 3 is not limited to the example of being disposed on the front surface 2a of the substrate 2, but may be disposed on at least one of the front surface 2a and the back surface 2c of the substrate 2.
  • 1st inorganic material layer 41 (1st layer) is provided in the surface 2a of the board
  • the first inorganic material layer 41 has a three-dimensional structure that protrudes upward in FIG. 6 from the surface 2 a of the substrate 2.
  • the first inorganic material layer 41 is made of an inorganic material capable of protecting the device layer 3 from moisture and oxygen.
  • the first inorganic material layer 41 is composed of silicon nitride (SiN x ) having excellent water vapor barrier properties, but is not limited to this material.
  • the first inorganic material layer 41 may be composed of another silicon compound such as silicon oxide or silicon oxynitride, or another inorganic material having a water vapor barrier property such as aluminum oxide.
  • the first inorganic material layer 41 is formed on the surface 2a of the substrate 2 using an appropriate mask, for example.
  • the first inorganic material layer 41 is formed using a mask having a rectangular opening having a size that can accommodate the device layer 3.
  • the film forming method is not particularly limited, and a CVD (Chemical Vapor Deposition) method, a sputtering method, an ALD (Atomic Layer Deposition) method, or the like is applicable.
  • the thickness of the first inorganic material layer 41 is not particularly limited, and is, for example, 200 nm to 2 ⁇ m.
  • the second inorganic material layer 42 is composed of an inorganic material capable of protecting the device layer 3 from moisture and oxygen. It is provided on the surface 2 a of the substrate 2 so as to cover the surface 41 a and the side surface 41 s of the layer 41.
  • the second inorganic material layer 42 is composed of silicon nitride (SiN x ) having excellent water vapor barrier properties, but is not limited to this material.
  • the second inorganic material layer 42 may be composed of another silicon compound such as silicon oxide or silicon oxynitride, or another inorganic material having a water vapor barrier property such as aluminum oxide.
  • the second inorganic material layer 42 is formed on the surface 2a of the substrate 2 using, for example, an appropriate mask.
  • the second inorganic material layer 42 is formed using a mask having a rectangular opening having a size capable of accommodating the first inorganic material layer 41.
  • the film forming method is not particularly limited, and a CVD (Chemical Vapor Deposition) method, a sputtering method, an ALD (Atomic Layer Deposition) method, or the like is applicable.
  • the thickness of the second inorganic material layer 42 is not particularly limited, and is, for example, 200 nm to 2 ⁇ m.
  • the element structure 10 according to the present embodiment further includes a first resin material 51.
  • the first resin material 51 is unevenly distributed around the first inorganic material layer 41 (convex portion).
  • the first resin material 51 is interposed between the first inorganic material layer 41 and the second inorganic material layer 42, and the side surface 41 s of the first inorganic material layer 41 and the surface 2 a of the substrate 2. Is unevenly distributed at the boundary 2b.
  • the first resin material 51 has a function of filling the gap G (FIG. 6) between the first inorganic material layer 41 formed in the vicinity of the boundary 2b and the substrate surface 2a.
  • the peripheral structure of the boundary portion 2b in the element structure 10 is shown in an enlarged manner. Since the first inorganic material layer 41 is formed of an inorganic material CVD film or sputtered film, the coverage characteristic (step coverage) with respect to the concavo-convex structure surface of the substrate 2 including the device layer 3 is relatively low. As a result, as shown in FIG. 6, the first inorganic material layer 41 covering the side surface 3s of the device layer 3 has reduced coverage characteristics near the substrate surface 2a, and the coating film thickness is extremely small. There is a risk that the film may be absent.
  • the first resin material 51 is unevenly distributed in the poorly coated region around the first inorganic material layer 41 as described above, so that moisture and oxygen from the poorly coated region to the inside of the device layer 3 can be obtained. To prevent intrusion.
  • the first resin material 51 functions as a base layer of the second inorganic material layer 42, so that the second inorganic material layer 42 is appropriately formed. Therefore, the side surface 41s of the first inorganic material layer 41 can be appropriately covered with a desired film thickness.
  • the resin material vaporized by spray vaporization is supplied to the substrate surface 2a and condensed to form the resin material film 5a, and the resin material film 5a is cured to form the resin film 5. After the formation, it is formed by a localization process for removing unnecessary portions.
  • 7 to 11 are process diagrams schematically showing a method for forming the first resin material 51 in the element structure manufacturing method according to the present embodiment.
  • the substrate S carried into the core chamber 200 from the load lock chamber 210 is transported from the core chamber 200 to the functional layer forming unit 204 by a substrate transport robot (not shown).
  • the device layer 3 (functional layer) is formed in a predetermined region on the substrate S.
  • the region to be the functional layer 3 is a plurality of regions on the substrate S, for example, four region arrangements arranged at predetermined intervals of two each in the X-axis direction and the Y-axis direction, A region to be a single functional layer 3 is used.
  • the method for forming the device layer 3 is not particularly limited, and can be appropriately selected depending on the material, configuration, and the like of the device layer 3.
  • the substrate S is transported to a film forming chamber or the like of the functional layer forming unit 204, and a predetermined material is deposited on the substrate S, sputtered, etc.
  • a desired device layer 3 can be formed.
  • the pattern processing method is not particularly limited, and for example, etching or the like can be employed.
  • the functional layer forming unit 204 includes a large number of processing chambers and includes a transfer device that can transfer the substrate S between adjacent processing chambers.
  • the structure which is not a vacuum apparatus is also employable. In other words, it is not necessary to go through the load lock chamber 210, and processing for the substrate S outside the element structure manufacturing apparatus 1000 can be made possible.
  • the substrate S on which the device layer 3 is formed is unloaded from the functional layer forming unit 204 by a substrate transfer robot (not shown) and is loaded into the first layer forming unit 201 through the core chamber 200.
  • the first inorganic material layer 41 (first layer) is formed in a predetermined region on the substrate S including the region of the device layer 3 so as to cover the device layer 3.
  • the first inorganic material layer 41 covering the device layer 3 is formed on the substrate S so as to have a convex portion as shown in FIG.
  • the first inorganic material layer 41 made of, for example, silicon nitride is formed as a part of the protective layer using a mask having a number of openings corresponding to the region of the first inorganic material layer 41. May be.
  • the first layer forming unit 201 can include a CVD processing apparatus or a sputtering processing apparatus.
  • a stage for placing the substrate S, a mask placed on the substrate S, and the substrate S on the stage are supported.
  • a mask alignment device for aligning the mask with respect to the film, a film forming material supply device, and the like are installed.
  • the substrate S on which the device layer 3 is formed is placed on the stage of the first layer forming unit 201 by a substrate transfer robot or the like placed in the core chamber 200.
  • a mask is arranged at a predetermined position on the substrate S by a mask alignment apparatus or the like so that the device layer 3 is exposed through the opening of the mask.
  • the first inorganic material layer 41 made of silicon nitride or the like is formed so as to cover the device layer 3 by the CVD method.
  • the formation method of the 1st inorganic material layer 41 is not restricted to CVD method, For example, a sputtering method can also be employ
  • the first layer forming unit 201 is configured to have a sputtering apparatus.
  • the chamber 110 is set by a heating device so that at least the temperatures of the inner surfaces of the upper space 107 and the lower space 108 are equal to or higher than the vaporization temperature of the resin material.
  • the substrate S placed on the stage 102 is cooled to a temperature lower than the vaporization temperature of the resin material together with the stage 102 by the substrate cooling device 102a.
  • the resin material supply pipe 112 (first pipe) is heated to a temperature equal to or higher than the vaporization temperature of the resin material by the heater 112d.
  • the resin film forming unit 100 includes a step of forming the resin material film 5a on the substrate S on which the first inorganic material layer 41 is formed and a step of forming the resin film 5 by curing the resin material film 5a. Do. In this step, first, a resin material film 5 a made of, for example, an ultraviolet curable acrylic material is formed using the resin film forming unit 100.
  • a calibration curve acquisition process S01 and a compensation time setting process S02 are performed prior to loading the substrate S. And set the compensation time.
  • control unit 400 closes the valve 112V so that no gas can flow into the resin material supply pipe 112, and opens the valve 113V to open the gas to the resin material bypass pipe 113. Is maintained in a state that allows inflow.
  • the vaporization of the resin material in the vaporizer 300 is preferably maintained for a necessary time before the film forming process according to the stability of the amount of the vaporized resin material supplied.
  • the film thickness setting step S06 As the film thickness setting step S06, the supply time setting step S07, and the substrate carry-in step S08, the film thickness to be formed is set, and the processing time required for this process by the control unit 400 is set. And the substrate S carried into the resin film forming unit 100 is placed on the stage 102 as described above.
  • a mask (not shown) is disposed at a predetermined position on the substrate S by a mask placing device or the like.
  • the controller 400 sets conditions such as the mask alignment state, the atmosphere in the chamber 110, the temperature of the inner wall of the chamber 110, the temperature of the resin material supply pipe 112, the temperature of the substrate S, and the like.
  • the controller 400 switches the open / close state of the valve 112V and the valve 113V.
  • the valve 112V is opened to allow gas to flow into the resin material supply pipe 112
  • the valve 113V is closed to prevent gas from flowing into the resin material bypass pipe 113V.
  • the vaporized resin material is supplied to the chamber 110.
  • the vaporized resin material supplied from the vaporizer 300 is supplied from the upper space 107 into the lower space 108 via the shower plate 105 through the resin material supply pipe 112.
  • the vaporized resin material supplied almost evenly over the entire surface of the substrate S by the shower plate 105 is condensed on the substrate surface 2a to form a liquid resin material film 5a as shown in FIG.
  • the corners, recesses, gaps, and the like having an inferior angle on the substrate surface 2a increase the film thickness of the resin material film 5a due to surface tension.
  • the film forming rate is made uniform by controlling the processing time (supply time) by the control unit 400 so as to compensate the resin material that decreases in accordance with the vaporization duration.
  • the resin material film 5a may be formed only in a region such as a portion (near position) near the convex portion 41 by a mask (not shown). It is preferable to control the supply amount of the resin material supplied from the vaporizer 300 by the control unit 400 in consideration of the liquefaction of the resin material and the film formation rate.
  • the resin material liquefied on the surface of the substrate S enters a fine gap due to a capillary phenomenon or further agglomerates due to the surface tension of the resin material, so that the resin material film 5a is formed while smoothing fine irregularities on the substrate S. It becomes possible to do. Thereby, the film thickness of the resin material film 5a is increased at corners, recesses, gaps, and the like having an inferior angle on the surface of the substrate S. In particular, it is possible to fill a minute gap in the boundary portion 2b between the side surface 41s of the first inorganic material layer 41 and the surface 2a of the substrate 2 with the resin material film 5a.
  • the vaporized resin material does not condense on the surface such as the inner wall of the chamber 110.
  • a resin material film 5a having a predetermined thickness is formed on the surface of the substrate S as a supply stop step S11 as shown in FIG.
  • the control unit 400 closes the valve 112V so that the gas cannot flow into the chamber 110, and opens the valve 113V so that the gas can flow into the resin material bypass pipe 113. Since the chamber 110 is continuously evacuated, the vaporized resin material is discharged to the outside of the chamber 110 and film formation is stopped.
  • the surface of the substrate S is irradiated with ultraviolet rays from the UV irradiation device 122 while maintaining the vacuum atmosphere in the chamber 110.
  • the irradiated ultraviolet rays pass through the top plate 120 and the shower plate 105 made of an ultraviolet transmitting material such as quartz and reach the substrate S in the chamber 110.
  • a part of the ultraviolet rays irradiated toward the substrate S in the chamber 110 is incident on the surface of the substrate S, and a photopolymerization reaction occurs in the resin material film 5a made of a resin material formed on the surface of the substrate S.
  • the liquid film 5a is cured.
  • the resin film 5 is formed on the surface of the substrate S.
  • an acrylic resin thin film is formed.
  • a mask (not shown) is moved from the film forming position on the substrate S to the retracted position by a mask mounting device or the like.
  • the substrate S on which the resin film 5 is formed is unloaded from the resin film forming unit 100 by a substrate transfer robot (not shown) as a substrate unloading process S12.
  • a substrate transfer robot not shown
  • the above-described method is repeated. If maintenance of the resin film forming unit 100 or maintenance of the vaporizer 300 is necessary, a vaporization stop process S13 is performed. The vaporization of the resin material in the vessel 300 is stopped.
  • the localization processing unit 202 can be configured to include a dry etching processing apparatus, in particular, a plasma etching processing apparatus.
  • the localization processing unit 202 may be a parallel plate type plasma processing apparatus.
  • the localization processing unit 202 places the substrate S on the electrode, introduces an etching gas into the chamber, and irradiates the chamber with the high frequency generated by the high frequency power source through the antenna. And a bias voltage is applied from the high frequency power source to the electrode on which the substrate S is placed. Ions existing in the plasma are drawn into the substrate placed on the electrode, and the resin film 5 formed on the surface of the substrate S is etched and removed.
  • the resin film 5 is etched by ions in plasma generated from an etching gas such as an oxidizing gas.
  • a bias voltage may be applied to the electrode. Etching removes the resin film 5 in the flat portion with a thin film thickness, and the resin film 5 in the thicker portion than the flat portion remains at corners, recesses, gaps, and the like having an inferior angle on the surface of the substrate S. This remaining portion becomes the first resin material 51.
  • the forming units 201 and 203 have not only a film forming function but also a localization process.
  • the function of the unit 202 can be provided. In this case, for example, the same processing apparatus can be used as the first layer forming unit 201, the second layer forming unit 203, and the localization processing unit 202.
  • This plasma processing can be performed for a predetermined processing time by calculating the processing time from the etching rate.
  • the localization processing unit 202 can be provided with a detection device.
  • This detection apparatus measures the bias voltage applied to the electrode, determines that the resin film 5 on the substrate S has been almost removed by the change in the measurement value, and uses the determination result (detection result) as the end point of the etching process.
  • the first resin material 51 remaining on the substrate S by this dry etching process is localized at the boundary 2b between the side surface 41s of the first inorganic material layer 41 and the surface 2a of the substrate 2. (It exists locally). Further, the first resin material 51 is unevenly distributed in a portion where fine irregularities on the surface of the first inorganic material layer 41 can be smoothed.
  • the substrate S formed by localizing the first resin material 51 is unloaded from the localization processing unit 202 by a substrate transfer robot (not shown), and loaded into the second layer forming unit 203 via the core chamber 200.
  • the second inorganic material layer is formed in a predetermined region on the substrate S including the convex portion so as to cover the first inorganic material layer 41 on which the first resin material 51 is formed. 42 (second layer) is formed.
  • the same material as that of the first inorganic material layer 41 is formed using a mask having a number of openings corresponding to the region of the second inorganic material layer 42.
  • the second inorganic material layer 42 (second layer) made of silicon nitride is formed.
  • the device layer 3 (functional layer) is covered with the first inorganic material layer 41 (first layer), the first resin material 51, and the second inorganic material layer 42 (second layer), and the device layer 3 can function as a protective layer for protecting 3.
  • the second layer forming unit 203 can include a CVD processing apparatus or a sputtering processing apparatus.
  • the second layer forming unit 203 can have the same device configuration as the first layer forming unit 201 described above.
  • the same processing apparatus can be used as the first layer forming unit 201 and the second layer forming unit 203, or the second layer forming unit 203 can have the function of the first layer forming unit 201. .
  • the function of the localization processing unit 202 can be provided. If the first resin material 51 is localized in the second layer forming portion 203, the second inorganic material layer 42 (second layer) can be formed as it is after the localization.
  • the substrate S on which the second inorganic material layer 42 is formed is unloaded from the second layer forming unit 203 by a substrate transfer robot (not shown), and the element structure body via the core chamber 200 and the load lock chamber 210. It is carried out of the manufacturing apparatus 1000.
  • the resin film 5 is formed as the process B in the resin film forming unit 100. Thereafter, the first resin material 51 localized by plasma etching is formed as a process C in the localization processing unit 202. After that, by forming the second inorganic material layer 42 (second layer), the second inorganic material layer 42 (second layer) is formed at a location requiring barrier properties as a protective layer, such as the boundary portion 2b. Can be reliably formed.
  • control unit 400 controls the film formation rate of the resin material to be stabilized, and specifically compensates for the amount of the resin material that decreases in accordance with the vaporization duration for operating the vaporizer 300 in the process B. To do. For this reason, by controlling the supply state so as to lengthen the supply time, which is the film formation time, it is possible to stabilize the film formation rate and prevent fluctuations in film characteristics.
  • the vaporization duration (acryl supply amount) is set.
  • the supply time processing time
  • the supply time is set by adding a compensation time such that the film thickness that decreases in response to the increase in the vaporization duration (acryl supply amount).
  • the resin material is unevenly distributed in the boundary portion 2b around the first inorganic material layer 41 (convex portion).
  • the resin material may remain on the surface 2a of the substrate 2 other than the boundary portion 2b, the surface 41a of the first inorganic material layer 41, or the like.
  • the second inorganic material layer 42 (second layer) has a region laminated on the first inorganic material layer 41 via the second resin material 52 as shown in FIG. become.
  • the second resin material 52 is interposed between the first inorganic material layer 41 and the second inorganic material layer 42, and the surface of the first inorganic material layer 41 is independent of the first resin material 51. 41a is unevenly distributed.
  • the side surface of the device layer 3 is covered with the first inorganic material layer 41 (first layer) and the second inorganic material layer 42 (second layer). Therefore, it is possible to prevent moisture and oxygen from entering the device layer 3.
  • the fall of the barrier characteristic accompanying the coverage defect of the 1st inorganic material layer 41 or the 2nd inorganic material layer 42 is carried out. And stable device characteristics can be maintained over a long period of time.
  • the element structure 20 according to the present example further includes a second resin material 52 interposed between the first inorganic material layer 41 and the second inorganic material layer 42 as shown in FIG.
  • the second resin material 52 is unevenly distributed on the surface of the first inorganic material layer 41 independently of the first resin material 51.
  • the surface of the first inorganic material layer 41 is not necessarily flat.
  • particles may be formed before film formation (before transporting the substrate or before entering the film formation apparatus) or during film formation. The case where unevenness
  • the coverage characteristics of the first inorganic material layer 41 with respect to the device layer 3 may be reduced, and desired barrier characteristics may not be obtained.
  • the element structure 20 according to the present example has a structure in which the second resin material 52 is filled in the poorly coated portion of the first inorganic material layer 41 caused by the mixing of the particles P or the like.
  • the second resin material 52 is unevenly distributed due to surface tension at a boundary portion 32b between the surface of the first inorganic material layer 41 and the peripheral surface of the particles P.
  • the coverage of the device layer 3 is enhanced, and the second inorganic material layer 42 can be appropriately formed by the second resin material 52 functioning as a base.
  • a thin resin film 5 may be formed on a flat portion during film formation. Around the particle P, a resin film 5 thicker than the flat portion is formed by surface tension.
  • the second resin material 52 is formed by the same method as the first resin material 51.
  • the second resin material 52 may be made of the same organic material as the first resin material 51. In this case, the first resin material 51 and the second resin material 52 can be simultaneously formed in the same process.
  • the thin portion is removed by etching, and the thick portion remains, that is, the resin film 5 is removed except for the portion where the particles P exist, and the first inorganic material layer 41 is removed.
  • the etching of the resin film 5 is stopped.
  • the resin film 5 at the boundary portion 32b hidden by the particles P is not over-etched, and the resin film 5 is reliably attached to the boundary portion 32b around the particles P. Remain.
  • the resin film 5 exhibits a gentle surface shape at the boundary portion 32b in the vicinity of the particle P.
  • the resin film 5 is substantially removed by anisotropic etching, the resin film 5 is completely removed and the first inorganic material layer 41 is exposed. Note that the etching can be stopped based on the result of plasma emission spectrum analysis or the elapsed time of anisotropic etching.
  • the resin film 5 is not removed at the boundary portion 2b, and the first resin material 51 is formed by the localization of the resin film 5.
  • the second resin material 52 is formed by the resin film 5 being localized without the resin film 5 being removed at the boundary portion 32b.
  • the element structure 30 includes, for example, a substrate 21 having a device layer 3 (functional layer), a protrusion 40 that covers the side surface 3 s of the device layer 3, a protrusion 40, and It has a first inorganic material layer 41 (first layer) and a second inorganic material layer 42 (second layer) formed on the surface of the substrate 21 so as to cover the device layer 3.
  • the convex portion 40 is formed on the surface 21 a of the substrate 21, and has a concave portion 40 a that accommodates the device layer 3 in the central portion.
  • the bottom surface of the recess 40a is formed at a position higher than the surface 21a of the substrate 21, but it may be formed at the same height as the surface 21a or at a position lower than the surface 21a. May be.
  • the element structure 30 according to the present example further includes a resin material 53 interposed between the first inorganic material layer 41 and the second inorganic material layer 42.
  • the resin material 53 is unevenly distributed on the boundary portion 21 b between the outer side surface of the convex portion 40 and the surface 21 a of the substrate 21, and the boundary portion 22 b between the inner side surface of the convex portion 40 and the device layer 3.
  • the resin material 53 can be formed by the same method as the first resin material 51 and the second resin material 52 described above.
  • the portion that cannot be covered with the inorganic material layer is further flattened with the unevenly distributed resin material.
  • the inorganic material layer formed on the resin material can be formed more uniformly and with good coverage.
  • the resin material has a lower seal against water or the like than the inorganic material layer, but the unevenly distributed resin material is covered with the inorganic material layer and is not exposed to the outside atmosphere, so that the sealing performance is improved. That is, it is preferable to unevenly distribute the resin material so that it is not film-like and is not exposed to the outside atmosphere.
  • the second inorganic material layer 42 (second layer) covering the first inorganic material layer 41 (first layer) is configured as a single layer, but the second inorganic material layer 42 (second layer) may be formed of a multilayer film.
  • a resin material that is unevenly distributed on the uneven portion of the substrate may be formed by supplying a resin material onto the substrate for each step of forming each layer, thereby further improving the barrier property.
  • the first resin material 51 is localized around the first inorganic material layer 41 serving as a convex portion.
  • the first resin material 51 is unevenly distributed around the device layer 3 by the resin film forming unit 100 and the localization processing unit 202. May be. Thereby, the covering efficiency of the device layer 3 by the first inorganic material layer 41 can be increased.
  • FIG. 17 is a flowchart showing a method for manufacturing an element structure (film formation method) according to this embodiment.
  • the difference from the first embodiment described above is a method for compensating the film formation rate.
  • the other components corresponding to those in the first embodiment described above are denoted by the same reference numerals, and the description thereof is omitted.
  • the film formation time per substrate S is increased in order to compensate for the decreasing film formation rate.
  • the vaporizer 300 supplies the resin film formation unit 100 with the film formation time. The supply amount of the resin material to be controlled is controlled and increased with time.
  • the film forming process in response to the compensation time setting step S02 in the first embodiment, the film forming process initially set for the calibration curve acquired in the calibration curve acquisition step S01. Corresponding to the integrated resin material supply amount, the resin material supply amount is increased over time in one film forming process so as to compensate for the decrease in the corresponding resin material supply amount. Set the compensation resin amount. The amount of the compensation resin is set so as to compensate for the decrease in the film formation rate with respect to the target film thickness. The change tendency of the compensation resin amount or the film formation rate is stored in the control unit.
  • the vaporization resin amount integration step S35 corresponding to the vaporization duration measurement step S05 shown in FIG. 3 is integrated as a reference for calculating the compensation resin amount. Start (measurement).
  • the compensation resin amount from the target film thickness and the amount of continuous vaporization resin at the start of film formation Is calculated in advance.
  • the amount of resin to be supplied during one film formation is set so as to gradually increase as the supply time elapses, corresponding to the amount of continuous evaporation of the vaporized resin material.
  • the substrate S is loaded into the resin film forming unit 100 in the substrate loading step S08 shown in FIG.
  • the controller 400 switches the open / close state of the valve 112V and the valve 113V, and supplies the resin material from the vaporizer 300 to the resin material supply pipe 112 (first pipe). Then, film formation is started. At this time, as a supply resin amount measurement step S30 corresponding to the supply time measurement step S10 shown in FIG.
  • the control unit 400 compensates for the decrease in the film formation rate according to the supply resin amount set in the supply resin amount setting step S37.
  • the film is formed by adjusting the opening degree of the valve 112V so as to gradually increase corresponding to the integrated amount.
  • the valve 112V is configured to be adjustable in opening.
  • the controller 400 switches the open / close state of the valve 112V and the valve 113V, and supplies the resin material from the vaporizer 300 to the resin material bypass pipe 113 (second pipe).
  • the target film thickness is obtained and the film formation is completed.
  • the formed substrate S is unloaded from the resin film forming unit 100.
  • the substrate carry-out step S12 is repeated a plurality of times from the film thickness setting step S06.
  • the vaporization continuous resin amount as the vaporized resin amount integration step S35 is integrated, and the compensation resin amount is calculated again as the supply resin amount setting step S37 each time according to this value. Control the opening.
  • the amount of resin supplied is increased as the film formation time increases. It is set so as to compensate for the decrease in film formation rate.
  • the vaporization in the vaporizer 300 is stopped, and the measurement of the vaporization continuous resin amount is ended.
  • the film thickness setting step S06 and the supply resin amount setting step S37 are performed with respect to the steps performed after the substrate carry-in step S08, that is, before the step in which actual film formation is performed.
  • the timing and order are not limited to the order of the steps described above. Further, even if the vaporizer 300 is not continuously operated, the vaporization efficiency is reduced by integrating the vaporization time from the latest cleaning. Even if the operation and stop of the vaporizer 300 are repeated, the reduction amount of the vaporization efficiency can be calculated by integrating the vaporization continuous resin amount.
  • the supply state is controlled so as to compensate for the vaporized resin material that decreases in accordance with the amount of the vaporized continuous resin as described above.
  • the film-forming rate by a resin material is stabilized irrespective of progress of the vaporization continuous resin amount.
  • the film formation rate of the resin material is stabilized regardless of the number of film formations and the amount of the vaporization continuous resin at the time of film formation from the previous cleaning. Therefore, it is possible to prevent fluctuations in film formation characteristics from occurring and to prevent fluctuations in film characteristics (film thickness).
  • control of each step can be performed by the control unit 400, and the calculation unit of the control unit 400 also performs calculation of a calibration curve and calculation and integration of the amount of film forming resin. Furthermore, the storage unit included in the control unit 400 also stores necessary data.
  • FIG. 18 is a flowchart showing a method for manufacturing an element structure (film formation method) according to the present embodiment.
  • the difference from the second embodiment described above is the resin supply for compensating the film formation rate. This is a point related to the method, and the other components corresponding to those of the second embodiment described above are denoted by the same reference numerals and description thereof is omitted.
  • control unit 400 corresponds to the integrated amount of the vaporization continuous resin amount so as to compensate for the decrease in the film formation rate in accordance with the supply resin amount set in the supply resin amount setting step S37.
  • the resin material supply amount from the resin material raw material container 150 in the vaporizer 300 is adjusted so as to gradually increase to form a film.
  • the supply amount per unit time for spraying the liquid resin material onto the heating unit 152 is controlled.
  • step S37 the compensation resin amount is calculated again, and the resin material supply amount from the resin material raw material container 150 during film formation is controlled. Specifically, in order to compensate for the amount of resin that decreases due to the occurrence of heat solidification or the like in accordance with the increase in the amount of resin material that has been vaporized in the vaporizer 300, the amount of resin supplied is increased as the film formation time increases. It is set so as to compensate for the decrease in film formation rate.
  • the supply amount of the resin material supplied to the vaporizer 300 is controlled so as to compensate for the vaporized resin material that decreases according to the vaporization continuous resin amount as described above.
  • the film forming rate of the resin material is stabilized regardless of the progress of the vaporization continuous resin amount.
  • the film formation rate of the resin material is stabilized regardless of the number of film formations and the amount of the vaporization continuous resin at the time of film formation from the previous cleaning. Therefore, it is possible to prevent fluctuations in film formation characteristics from occurring and to prevent fluctuations in film characteristics (film thickness).
  • Examples of utilization of the present invention include sealing of organic EL devices and sealing of electronic devices.
  • UV irradiation device 130 Vaporization tank 132 ... Discharge unit 140 ... Resin material liquid supply pipe 150 ... Resin material raw material container 200 ... Core chamber 201 . First layer formation unit (film formation chamber) 202 ... Localization processing unit 203 ... Second layer forming unit (deposition chamber) 204 ... functional layer forming part (deposition chamber) 210 ... Load lock chamber 300 ... Vaporizer 400 ... Control unit 1000 ... Element structure manufacturing apparatus

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  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)

Abstract

Cette invention concerne un procédé de formation de film comprenant la pulvérisation d'un matériau de résine liquide sur une unité de chauffage et la vaporisation de celui-ci, la vapeur évaporée étant fournie sur un substrat, et formant un film de matériau de résine. Le procédé de formation de film commande les conditions de formation de film de façon à compenser la vitesse d'évaporation du matériau de résine qui est réduite en fonction de la quantité intégrée d'évaporation qui est la quantité totale de matériau de résine fournie à l'unité de chauffage.
PCT/JP2018/005925 2017-02-21 2018-02-20 Procédé de formation de film, dispositif de formation de film, procédé de production pour structure d'élément et dispositif de production pour structure d'élément Ceased WO2018155415A1 (fr)

Priority Applications (3)

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JP2019501327A JP6653408B2 (ja) 2017-02-21 2018-02-20 成膜方法、成膜装置、素子構造体の製造方法、及び素子構造体の製造装置
KR1020197016816A KR102234630B1 (ko) 2017-02-21 2018-02-20 성막 방법, 성막 장치, 소자구조체의 제조 방법, 및 소자구조체의 제조 장치
CN201880010348.5A CN110268091B (zh) 2017-02-21 2018-02-20 成膜方法、成膜装置、元件结构体的制造方法及元件结构体的制造装置

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JP2017-030318 2017-02-21

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TWI830038B (zh) * 2020-07-27 2024-01-21 大陸商江蘇菲沃泰納米科技股份有限公司 原料氣化裝置以及鍍膜設備

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JP2000200781A (ja) * 1999-01-07 2000-07-18 Ebara Corp 液体原料気化装置及び方法
JP2007526396A (ja) * 2004-02-23 2007-09-13 イーストマン コダック カンパニー Ｏｌｅｄのための温度感受性材料の気化
JP2007103801A (ja) * 2005-10-06 2007-04-19 Tokyo Electron Ltd 気化装置、成膜装置及び気化方法
JP2009170800A (ja) * 2008-01-18 2009-07-30 Tokyo Electron Ltd 気化原料供給装置、成膜装置及び気化原料供給方法
JP2012142380A (ja) * 2010-12-28 2012-07-26 Tokyo Electron Ltd 原料供給装置及び成膜装置
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JPWO2018155415A1 (ja) 2019-11-07
JP6653408B2 (ja) 2020-02-26
CN110268091A (zh) 2019-09-20
TW201835173A (zh) 2018-10-01
CN110268091B (zh) 2021-10-12
KR20190077534A (ko) 2019-07-03
KR102234630B1 (ko) 2021-04-01

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