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WO2018146063A1 - Ensemble circuit permettant d'augmenter la tension à vide d'une charge inductive et étage de sortie - Google Patents

Ensemble circuit permettant d'augmenter la tension à vide d'une charge inductive et étage de sortie Download PDF

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Publication number
WO2018146063A1
WO2018146063A1 PCT/EP2018/052882 EP2018052882W WO2018146063A1 WO 2018146063 A1 WO2018146063 A1 WO 2018146063A1 EP 2018052882 W EP2018052882 W EP 2018052882W WO 2018146063 A1 WO2018146063 A1 WO 2018146063A1
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
semiconductor switch
terminal
circuit
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2018/052882
Other languages
German (de)
English (en)
Inventor
Frank Hettrich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to CN201880011354.2A priority Critical patent/CN110249528A/zh
Publication of WO2018146063A1 publication Critical patent/WO2018146063A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches

Definitions

  • the present invention relates to a circuit arrangement for increasing the freewheeling voltage of an inductive load and an output stage with such a circuit arrangement.
  • loads can be provided in motor vehicles which can be controlled by high-side or low-side switches in output stages.
  • loads can also be inductive loads, such as magnetic actuators, for example injection valves.
  • MOSFET lowside switches in the form of output stage ASIC can be used.
  • the valves are usually in the on / off mode with a maximum frequency of e.g. 50 Hz operated.
  • a maximum frequency e.g. 50 Hz operated.
  • US 8468810 B2 proposes to increase the voltage across the valve by means of an additional voltage source for faster switching off an injector for an exhaust aftertreatment system.
  • the highest possible freewheeling voltage (induction voltage after opening the switch) can be allowed even after opening the output stage (switching to the non-conductive state) so that the current through the valve decays as quickly as possible and the valve closes quickly.
  • a protective circuit comprising a reverse-biased zener diode in series with a diode in parallel with the drain-gate path of the semiconductor switch. The drain-source voltage and thus the free-wheeling voltage are thereby clamped substantially to the sum of the zener voltage and the threshold voltage of the diode.
  • the maximum free-wheeling voltage is determined by the design of the final stage brick, in particular the diodes used, in which case values of e.g. 50 V are possible. If higher freewheeling voltages are desired, the complete amplifier module must be redesigned.
  • a circuit arrangement is now presented which can be connected upstream of a conventional output stage module, that is, for example, between load and load terminal of the output stage module, and serves to increase the free-wheeling voltage.
  • the power amp module itself can remain unchanged. Its functions, in particular also with regard to a diagnosis of errors (eg open load, bridged switch, ground short circuit, voltage short circuit), are not impaired. Also, the switch-on is not adversely affected.
  • the invention proposes an effective and above all cost-effective way to increase the free-wheeling voltage.
  • one type of power amplifier module can be used for different applications with different free-wheeling voltages.
  • the circuit arrangement has a load connection (to the load) and a ground connection (to the output module), between which a semiconductor switch with its two working connections (eg drain / source or emitter / collector) and a protective circuit is connected, wherein the Protective circuit between a control connection (eg gate or
  • the Base of the semiconductor switch and the load terminal of the circuit arrangement and is adapted to clamp the falling between the load terminal and the control terminal voltage to a Freilaufêtserhöhungs- value.
  • the total freewheeling voltage is then composed of the freewheeling voltage that the output stage module permits and the freewheeling voltage increase value.
  • the protective circuit has a reverse-biased zener diode in series with a diode.
  • the free-wheeling voltage boosting value is then composed essentially of the magnitude of the Zener voltage, the threshold voltage of the diode and the voltage between the control terminal and the load-side working terminal of the semiconductor switch (MOSFET gate-source voltage).
  • MOSFET gate-source voltage the voltage between the control terminal and the load-side working terminal of the semiconductor switch
  • the circuit arrangement preferably has a control voltage supply for the control connection of the semiconductor switch and a voltage drop element, in particular a resistance element, between the control connection of the semiconductor switch and the ground connection. This serves to ensure that the semiconductor switch in dependence on the voltage applied to the ground terminal
  • the control voltage supply has a control voltage source protected by a diode from being fed back from the load circuit.
  • the circuit arrangement preferably has a conducting element which is connected in parallel with the semiconductor switch and ensures a current-conducting state of the circuit arrangement between the load connection and the ground connection, even in the event that the semiconductor switch is in a non-conducting state.
  • a conducting element which is connected in parallel with the semiconductor switch and ensures a current-conducting state of the circuit arrangement between the load connection and the ground connection, even in the event that the semiconductor switch is in a non-conducting state.
  • a simple resistance element is particularly suitable for this purpose. This measure ensures, in particular, that diagnostic functions of the downstream output module that apply a voltage to the load in the off state, e.g. to detect faults such as open load, bridged switch, ground short circuit, short circuit, continue to work.
  • Figure 1 shows a preferred embodiment of an output stage according to the invention comprising a conventional power amplifier module and a preferred embodiment of a circuit arrangement according to the invention for increasing the free-wheeling voltage of an inductive load.
  • FIG. 1 a preferred embodiment of an output stage according to the invention is shown as a circuit diagram and designated by 100.
  • the output stage 100 has an output stage module 10 and a circuit arrangement 20 arranged upstream of it for increasing the freewheeling voltage of an inductive load 1, for example As an injection valve, on.
  • an inductive load for example As an injection valve, on.
  • it is a low-side circuit in which the load 1 is permanently connected to the supply voltage and the output stage 100 is connected between the load 1 and ground.
  • the power amplifier module 10 has a semiconductor switch S1 to a conductive
  • the power amplifier module 10 has a control logic 13, which can fulfill other functions in addition to the function F1 of the control of the semiconductor switch S1.
  • diagnostic function of the power amplifier module 10 has a diagnostic circuit part 14th
  • the power amplifier module 10 also has a corresponding protective circuit 15, which has a reverse-biased zener diode in series with a diode.
  • the circuit arrangement 20 can now be connected upstream of the final-stage module 10 in the manner of a ballast module.
  • the circuit arrangement 20 has a load terminal 21 to the load 1 and a ground terminal 22 to the output stage module 10. Between the load terminal 21 and the ground terminal 22 is a semiconductor switch S2 with its two working terminals D, S, e.g. a MOSFET with drain and source, switched.
  • the control terminal (gate) G of the semiconductor switch S2 is connected via a
  • the protective circuit 30 connected to the load terminal 21.
  • the protective circuit 30 has a reverse-connected zener diode 31 in series with a diode 32.
  • the protective circuit 30 clamps the falling voltage to the sum of the level of the Zener voltage and the threshold voltage of the diode.
  • the protective circuit 20 also has a control voltage supply 40 for the control terminal G of the semiconductor switch S2.
  • the control voltage supply has a series circuit comprising a control voltage source VS, a resistance element 41 and a diode 42 as feedback protection at the control connection G, and a voltage drop element formed here as a resistance element 43 between the control voltage connection G and the ground connection 22.
  • the protective circuit 20 has a parallel to the semiconductor switch S2 switched on guide element, which is designed here as Wderstandselement 50.
  • the resistance element 50 ensures a current-conducting state of the circuit arrangement between the load terminal 21 and ground terminal 22, even in the event that the semiconductor switch S2 is in a non-conductive state. As a result, the functionality of the diagnostic circuit 14 is maintained in the power amplifier module 10.
  • the protective circuit 20 in the present example also has a capacitor 60 for ESD protection (electrostatic discharge, English: electrostatic discharge).
  • the battery potential Ubat is essentially set at the ground connection 22 (depending on the resistances involved in the components of the circuit arrangement 20 and the load 1).
  • the gate-source voltage at the semiconductor switch S2 is negative and the semiconductor switch S2 also does not conduct.
  • the total (negative) free-wheeling voltage across the load 1 is therefore composed of the sum of the terminal voltage of the output stage module 10 and the terminal voltage or free-wheeling voltage of the circuit arrangement 20 minus the supply voltage Ubat.

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  • Electronic Switches (AREA)

Abstract

L'invention concerne un ensemble circuit (20) permettant d'augmenter la tension à vide d'une charge inductive, comprenant un raccordement de charge (21) et un raccordement de masse (22), un commutateur à semi-conducteur (S2) muni de deux raccordements de travail et d'un raccordement de commande (G), et un câblage de protection (30). Un des deux raccordements de travail du commutateur à semi-conducteur (S2) est connecté de manière électroconductrice au raccordement de charge (21) et l'autre des raccordements de travail du commutateur à semi-conducteur (S2) est connecté de manière électroconductrice au raccordement de masse (22), le câblage de protection (30) étant monté entre le raccordement de charge (21) et le raccordement de commande (G) du commutateur à semi-conducteur (S2) et conçu pour bloquer à une valeur d'augmentation de la tension à vide la tension diminuant entre le raccordement de charge (21) et le raccordement de commande (G).
PCT/EP2018/052882 2017-02-13 2018-02-06 Ensemble circuit permettant d'augmenter la tension à vide d'une charge inductive et étage de sortie Ceased WO2018146063A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201880011354.2A CN110249528A (zh) 2017-02-13 2018-02-06 用于提高电感负载的空载电压的电路装置以及输出级

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017202184.5A DE102017202184A1 (de) 2017-02-13 2017-02-13 Schaltungsanordnung zum Erhöhen der Freilaufspannung einer induktiven Last und Endstufe
DE102017202184.5 2017-02-13

Publications (1)

Publication Number Publication Date
WO2018146063A1 true WO2018146063A1 (fr) 2018-08-16

Family

ID=61188801

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2018/052882 Ceased WO2018146063A1 (fr) 2017-02-13 2018-02-06 Ensemble circuit permettant d'augmenter la tension à vide d'une charge inductive et étage de sortie

Country Status (3)

Country Link
CN (1) CN110249528A (fr)
DE (1) DE102017202184A1 (fr)
WO (1) WO2018146063A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5939908A (en) * 1996-06-27 1999-08-17 Kelsey-Hayes Company Dual FET driver circuit
JP3979096B2 (ja) * 2002-01-22 2007-09-19 株式会社日立製作所 半導体素子の駆動装置ならびにそれを用いた電力変換装置
EP1943733A2 (fr) * 2005-10-25 2008-07-16 Robert Bosch Gmbh Systeme de compensation thermique dans des etages de sortie
DE102008036114A1 (de) * 2007-09-13 2009-03-19 Infineon Technologies Ag Halbleiterschalter mit Klemmschaltung
DE102011006316A1 (de) * 2011-03-29 2012-10-04 Robert Bosch Gmbh Verfahren zum Ansteuern eines Gleichrichters
US8468810B2 (en) 2009-12-04 2013-06-25 Tenneco Automotive Operating Company Inc. NOx elimination injector firing control circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19626630C1 (de) * 1996-07-02 1997-09-11 Siemens Ag Vorrichtung zum Schalten eines induktiven Verbrauchers
DE19838109B4 (de) * 1998-08-21 2005-10-27 Infineon Technologies Ag Ansteuerschaltung für induktive Lasten
DE102007031327A1 (de) 2007-07-05 2009-01-08 Nidec Motors & Actuators Gleichstrommotor mit Teilwicklungsabschaltung
CN104604134B (zh) 2012-08-30 2017-06-30 株式会社电装 半导体装置
DE202014105631U1 (de) * 2014-11-21 2014-12-09 Infineon Technologies Ag Schaltungsanordnung zur Reduzierung von Überspannungen

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5939908A (en) * 1996-06-27 1999-08-17 Kelsey-Hayes Company Dual FET driver circuit
JP3979096B2 (ja) * 2002-01-22 2007-09-19 株式会社日立製作所 半導体素子の駆動装置ならびにそれを用いた電力変換装置
EP1943733A2 (fr) * 2005-10-25 2008-07-16 Robert Bosch Gmbh Systeme de compensation thermique dans des etages de sortie
DE102008036114A1 (de) * 2007-09-13 2009-03-19 Infineon Technologies Ag Halbleiterschalter mit Klemmschaltung
US8468810B2 (en) 2009-12-04 2013-06-25 Tenneco Automotive Operating Company Inc. NOx elimination injector firing control circuit
DE102011006316A1 (de) * 2011-03-29 2012-10-04 Robert Bosch Gmbh Verfahren zum Ansteuern eines Gleichrichters

Also Published As

Publication number Publication date
CN110249528A (zh) 2019-09-17
DE102017202184A1 (de) 2018-08-16

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