[go: up one dir, main page]

WO2018003268A1 - Dispositif de filtre à onde élastique, multiplexeur, circuit frontal haute fréquence et dispositif de communication - Google Patents

Dispositif de filtre à onde élastique, multiplexeur, circuit frontal haute fréquence et dispositif de communication Download PDF

Info

Publication number
WO2018003268A1
WO2018003268A1 PCT/JP2017/016619 JP2017016619W WO2018003268A1 WO 2018003268 A1 WO2018003268 A1 WO 2018003268A1 JP 2017016619 W JP2017016619 W JP 2017016619W WO 2018003268 A1 WO2018003268 A1 WO 2018003268A1
Authority
WO
WIPO (PCT)
Prior art keywords
parallel resonator
parallel
input
resonator
resonators
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2017/016619
Other languages
English (en)
Japanese (ja)
Inventor
高峰　裕一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of WO2018003268A1 publication Critical patent/WO2018003268A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/50—Circuits using different frequencies for the two directions of communication

Definitions

  • the present invention relates to an elastic wave filter device having a ladder-type resonator structure, a multiplexer including the elastic wave filter device, a high-frequency front-end circuit, and a communication device.
  • Patent Document 1 discloses a surface acoustic wave device that can suppress an increase in insertion loss while narrowing the band.
  • FIG. 8 is a diagram showing a resonator structure and resonance characteristics of the surface acoustic wave device described in Patent Document 1.
  • FIG. 6A series resonators 511a, 511b and 511c, and parallel resonators 512a, 512b, 512c and 512d are arranged in a ladder shape.
  • FIG. 5B the resonance frequencies of the series resonators 511a and 511b among the series resonators 511a to 511c are set lower than the anti-resonance frequencies of the parallel resonators 512a to 512d.
  • the capacitive region of the series resonator 511c is set in the inductive region formed by the parallel resonators 512a to 512d and the series resonators 511a and 511b that form the pass band. It is said that a lossy surface acoustic wave device can be realized.
  • the design method for matching the antiresonance frequencies of the parallel resonators 512a to 512d makes the filter passband width and the steepness of both ends of the passband. It becomes difficult to adjust the characteristics. For example, if the anti-resonance frequencies of all the parallel resonators are arranged in the vicinity of the center of the pass band, the bandwidth may be excessively widened. For example, when a narrow passband is required, such as a 2.4 GHz band WiFi filter, it is not possible to secure a sufficient amount of attenuation on the low frequency side outside the passband. For this reason, it is difficult to realize a narrow band filter having steepness on both the low frequency side and the high frequency side of the pass band while ensuring low loss of the pass band.
  • the present invention has been made to solve the above-described problem, and has a narrow band filter characteristic with good steepness on both the low frequency side and the high frequency side while ensuring low loss in the pass band. It is an object of the present invention to provide an elastic wave filter device, a multiplexer, a high frequency front end circuit, and a communication device.
  • an elastic wave filter device is a ladder-type elastic wave filter device having a series resonator and a parallel resonator, and includes a first input / output terminal and a second input.
  • the anti-resonance frequency of the third parallel resonator that is one of the two or more parallel resonators is Antiresonance of the parallel resonator and the second parallel resonator
  • the resonance frequency of the third parallel resonator is lower than the wave number and lower than the resonance frequency of the first parallel resonator and the second parallel resonator, and is one of the two or more parallel resonators.
  • the anti-resonance frequency of the fourth parallel resonator is higher than the anti-resonance frequencies of the first parallel resonator and the second parallel resonator, and the resonance frequency of the fourth parallel resonator is the first resonance frequency of the first parallel resonator.
  • the resonance frequency is higher than that of the parallel resonator and the second parallel resonator.
  • the anti-resonance frequency of the fourth parallel resonator is set to the anti-resonance frequency of the first parallel resonator closest to the first input / output terminal and the second parallel resonator closest to the second input / output terminal. Shift to a higher frequency side than the anti-resonance frequency. As a result, the pass band width on the low pass band side can be narrowed, and the attenuation on the low frequency side outside the pass band can be secured.
  • the impedance matching on the low frequency side of the passband is shifted due to the effect of shifting the antiresonance frequency of the fourth parallel resonator to the high frequency side, the antiresonance frequency of the third parallel resonator is changed to the first parallel resonator. And the antiresonance frequency of the second parallel resonator. Thereby, the impedance matching can be adjusted.
  • the anti-resonance frequency of the first parallel resonator and the second parallel resonator is between the anti-resonance frequency of the third parallel resonator and the anti-resonance frequency of the fourth parallel resonator, and near the center of the passband.
  • impedance matching does not occur in the first input / output terminal and the second input / output terminal.
  • An elastic wave filter device is a ladder-type elastic wave filter device having a series resonator and a parallel resonator formed of IDT electrodes formed on a substrate having a piezoelectric layer. And three or more series resonators connected in series between the first input / output terminal and the second input / output terminal, the first input / output terminal, the second input / output terminal, and the three or more series resonances. 4 or more parallel resonators connected between one of the connection nodes of the child and the reference terminal, and the first of the four or more parallel resonators connected closest to the first input / output terminal.
  • a third parallel resonance which is one of the two or more parallel resonators
  • the electrode pitch of the child is the first parallel
  • the electrode pitch of the fourth parallel resonator which is larger than the electrode pitch of the pendulum and the second parallel resonator and is one of the two or more parallel resonators, is the first parallel resonator and the second parallel resonator. It is smaller than the electrode pitch of the resonator.
  • the electrode pitch of the fourth parallel resonator is smaller than the electrode pitch of the first parallel resonator closest to the first input / output terminal and the electrode pitch of the second parallel resonator closest to the second input / output terminal. By doing so, the anti-resonance frequency of the fourth parallel resonator is shifted to a higher frequency side than the vicinity of the center in the pass band. As a result, the pass band width on the low pass band side can be narrowed, and the attenuation on the low frequency side outside the pass band can be secured.
  • the electrode pitch of the third parallel resonator is changed to that of the first parallel resonator.
  • the anti-resonance frequency of the third parallel resonator is shifted to the lower frequency side from the vicinity of the center in the pass band.
  • the electrode pitch of the first parallel resonator and the second parallel resonator is between the electrode pitch of the third parallel resonator and the electrode pitch of the fourth parallel resonator, and is the first parallel resonator and the second parallel resonator. Since the antiresonance frequency of the parallel resonator is set near the center of the pass band, impedance matching at the first input / output terminal and the second input / output terminal does not go away. As described above, it is possible to obtain a narrow-band ladder-type filter having good steepness on both the low frequency side and high frequency side of the pass band while ensuring low loss of the pass band.
  • An elastic wave filter device is a ladder-type elastic wave filter device having a series resonator and a parallel resonator formed of IDT electrodes formed on a substrate having a piezoelectric layer. And three or more series resonators connected in series between the first input / output terminal and the second input / output terminal, the first input / output terminal, the second input / output terminal, and the three or more series resonances. 4 or more parallel resonators connected between one of the connection nodes of the child and the reference terminal, and the first of the four or more parallel resonators connected closest to the first input / output terminal.
  • a third parallel resonance which is one of the two or more parallel resonators
  • the electrode duty of the child is
  • the electrode duty of the fourth parallel resonator which is larger than the electrode duty of the parallel resonator and the second parallel resonator and is one of the two or more parallel resonators, is the first parallel resonator and the second parallel resonator. It is smaller than the electrode duty of the two parallel resonators.
  • the electrode duty of the fourth parallel resonator is smaller than the electrode duty of the first parallel resonator closest to the first input / output terminal and the electrode duty of the second parallel resonator closest to the second input / output terminal. By doing so, the anti-resonance frequency of the fourth parallel resonator is shifted to a higher frequency side than the vicinity of the center in the pass band. As a result, the pass band width on the low pass band side can be narrowed, and the attenuation on the low frequency side outside the pass band can be secured.
  • the electrode duty of the third parallel resonator is set to the electrode of the first parallel resonator.
  • the anti-resonance frequency of the third parallel resonator is shifted to the lower frequency side than the vicinity of the center in the pass band.
  • the electrode duty of the first parallel resonator and the second parallel resonator is between the electrode duty of the third parallel resonator and the electrode duty of the fourth parallel resonator, and is the first parallel resonator and the second parallel resonator. Since the antiresonance frequency of the parallel resonator is set near the center of the pass band, impedance matching at the first input / output terminal and the second input / output terminal does not go away. As described above, it is possible to obtain a narrow-band ladder-type filter having good steepness on both the low frequency side and high frequency side of the pass band while ensuring low loss of the pass band.
  • the substrate includes a piezoelectric layer in which the IDT electrode is formed on one main surface, and a high-sonic velocity supporting substrate whose bulk wave velocity is higher than an acoustic wave velocity that propagates through the piezoelectric layer. And a low sound velocity film disposed between the high sound velocity support substrate and the piezoelectric layer and having a bulk wave sound velocity propagating at a lower speed than an elastic wave sound velocity propagating through the piezoelectric layer. .
  • each resonator including the IDT electrode formed on the substrate having the piezoelectric layer can be maintained at a high value.
  • the multiplexer is a multiplexer that demultiplexes an input signal by including a plurality of bandpass filters that selectively pass a predetermined frequency band, and the plurality of bandpass filters pass through the multiplexer.
  • Each of the frequency bands is different, one end of each of the plurality of band pass filters is connected to a common terminal, and at least one of the plurality of band pass filters is any one of the elastic wave filter devices. .
  • a high-frequency front-end circuit includes any one of the elastic wave filter devices or the multiplexer and an amplifier circuit that is connected to the elastic wave filter device and amplifies a high-frequency signal.
  • a communication device includes the high-frequency front end circuit and an RF signal processing circuit that processes a high-frequency signal.
  • an elastic wave filter device a multiplexer, a high-frequency front-end circuit, and a communication having a narrow-band filter characteristic with good steepness on both the low-frequency side and the high-frequency side while ensuring a low loss in the pass band
  • An apparatus can be provided.
  • FIG. 1 is a circuit configuration diagram of an acoustic wave filter device according to an embodiment.
  • FIG. 2 is a plan view and a cross-sectional view schematically illustrating a resonator of the acoustic wave filter device according to the embodiment.
  • FIG. 3 is a circuit configuration diagram illustrating a principle of operation of a ladder-type elastic wave filter and a graph showing frequency characteristics.
  • FIG. 4 is a cross-sectional view illustrating a mounting configuration of the acoustic wave filter device according to the embodiment.
  • FIG. 5 is a graph showing filter pass characteristics and resonance characteristics of the acoustic wave filter device according to the example.
  • FIG. 6 is a graph comparing the filter pass characteristics of the elastic wave filter devices according to the example and the comparative example.
  • FIG. 1 is a circuit configuration diagram of an acoustic wave filter device according to an embodiment.
  • FIG. 2 is a plan view and a cross-sectional view schematically illustrating a resonator of the
  • FIG. 7 is a circuit configuration diagram of a high-frequency front-end circuit and a communication device having an elastic wave filter device according to an embodiment.
  • FIG. 8 is a diagram showing a resonator structure and resonance characteristics of the surface acoustic wave device described in Patent Document 1. In FIG.
  • Example [1. Basic configuration of elastic wave filter device] A basic configuration of an elastic wave filter device according to an embodiment of the present invention will be described. In this embodiment, a band-pass surface acoustic wave filter applied to a 2.4 GHz band WiFi (2400-2483 MHz) is illustrated.
  • FIG. 1 is a circuit configuration diagram of an elastic wave filter device 21 according to an embodiment.
  • the acoustic wave filter device 21 includes series resonators 101, 102, 103, 104, and 105, parallel resonators 151, 152, 153, and 154, input / output terminals 100 and 120, Is provided.
  • the series resonators 101 to 105 are connected in series between the input / output terminal 100 and the input / output terminal 120.
  • the parallel resonators 151 to 154 are connected in parallel between connection points of the input / output terminal 100, the input / output terminal 120, and the series resonators 101 to 105, and a reference terminal (ground). Due to the above-described connection configuration of the series resonators 101 to 105 and the parallel resonators 151 to 154, the acoustic wave filter device 21 constitutes a ladder type band pass filter.
  • the number of series resonators and parallel resonators of the acoustic wave filter device according to the present invention is not limited to 5 and 4, respectively, and there may be 2 or more series resonators and 4 or more parallel resonators. That's fine. Further, for a ladder structure composed of two or more series resonators and four or more parallel resonators, for example, a longitudinally coupled resonance is provided between the input / output terminal 100 and the input / output terminal 120. A child or the like may be connected.
  • the reference terminal (ground) to which the parallel resonators 152 to 154 are connected is shared, but the reference terminal (ground) to which the parallel resonators 151 to 154 are connected is shared. Or may be individualized.
  • circuit elements such as inductors and capacitors may be inserted or connected to connection points of the input / output terminals 100 and 120, the series resonators 101 to 105, and the parallel resonators 151 to 154.
  • the elastic wave filter device 21 is applied to the 2.4 GHz band WiFi.
  • the elastic wave filter device according to the present invention is not limited to WiFi and can be applied to other frequency bands. It is.
  • Resonator structure of acoustic wave filter device The structure of each resonator that is a component of the acoustic wave filter device 21 will be described.
  • the series resonator and the parallel resonator constituting the acoustic wave filter device 21 according to the present embodiment are surface acoustic wave (SAW) resonators.
  • FIG. 2 is a plan view and a cross-sectional view schematically showing a resonator of the acoustic wave filter device 21 according to the embodiment.
  • a schematic plan view and a schematic cross-sectional view showing the structure of the series resonator 101 among a plurality of resonators constituting the acoustic wave filter device 21 are illustrated.
  • the series resonator 101 shown in FIG. 2 is for explaining a typical structure of the plurality of resonators, and the number and length of electrode fingers constituting the electrode are the same. It is not limited.
  • Each resonator of the acoustic wave filter device 21 includes a substrate 220 having a piezoelectric layer 227 and IDT (InterDigital Transducer) electrodes 22a and 22b having a comb shape.
  • IDT InterDigital Transducer
  • the IDT electrode 22a includes a plurality of electrode fingers 222a that are parallel to each other and a bus bar electrode 221a that connects the plurality of electrode fingers 222a.
  • the IDT electrode 22b includes a plurality of electrode fingers 222b that are parallel to each other and a bus bar electrode 221b that connects the plurality of electrode fingers 222b.
  • the plurality of electrode fingers 222a and 222b are formed along a direction orthogonal to the X-axis direction.
  • the IDT electrode 22 composed of the plurality of electrode fingers 222a and 222b and the bus bar electrodes 221a and 221b has a laminated structure of the adhesion layer 223 and the main electrode layer 224 as shown in the cross-sectional view of FIG. ing.
  • the adhesion layer 223 is a layer for improving adhesion between the piezoelectric layer 227 and the main electrode layer 224, and Ti is used as a material, for example.
  • the film thickness of the adhesion layer 223 is 12 nm, for example.
  • the main electrode layer 224 is made of, for example, Al containing 1% Cu.
  • the film thickness of the main electrode layer 224 is, for example, 131 nm.
  • the protective layer 225 is formed so as to cover the IDT electrodes 22a and 22b.
  • the protective layer 225 is a layer for the purpose of protecting the main electrode layer 224 from the external environment, adjusting frequency temperature characteristics, and improving moisture resistance, for example, a film mainly composed of silicon dioxide. .
  • the film thickness of the protective layer 225 is, for example, 30 nm.
  • the materials constituting the adhesion layer 223, the main electrode layer 224, and the protective layer 225 are not limited to the materials described above. Furthermore, the IDT electrode 22 may not have the above-described laminated structure.
  • the IDT electrode 22 may be made of, for example, a metal or alloy such as Ti, Al, Cu, Pt, Au, Ag, or Pd, or may be made of a plurality of laminates made of the above metal or alloy. May be. Further, the protective layer 225 may not be formed.
  • the substrate 220 includes a high sound speed support substrate 228, a low sound speed film 226, and a piezoelectric layer 227.
  • the high sound speed support substrate 228, the low sound speed film 226, and the piezoelectric layer 227 are provided. It has a laminated structure in this order.
  • the piezoelectric layer 227 is formed of, for example, a 50 ° Y-cut X-propagating LiTaO 3 piezoelectric single crystal or a piezoelectric ceramic (lithium tantalate unit cut along a plane whose normal is an axis rotated by 50 ° from the Y axis with the X axis as the central axis. A single crystal or ceramics in which a surface acoustic wave propagates in the X-axis direction).
  • the thickness of the piezoelectric layer 227 is 3.5 ⁇ or less, for example, 450 nm when the wavelength of the elastic wave determined by the electrode pitch of the IDT electrode 22 is ⁇ .
  • the electrode pitch of the IDT electrode 22 refers to the distance between the centers of adjacent electrode fingers in the IDT electrode 22.
  • the high sound velocity support substrate 228 is a substrate that supports the low sound velocity film 226, the piezoelectric layer 227, and the IDT electrode 22.
  • the high-sonic support substrate 228 is a substrate in which the acoustic velocity of the bulk wave in the high-sonic support substrate 228 is higher than that of the surface wave or boundary wave that propagates through the piezoelectric layer 227.
  • the piezoelectric layer 227 and the low acoustic velocity film 226 are confined in a laminated portion and function so as not to leak downward from the high acoustic velocity support substrate 228.
  • the high sound speed support substrate 228 is, for example, a silicon substrate and has a thickness of, for example, 200 ⁇ m.
  • the high sound velocity support substrate 228 includes (1) a piezoelectric body such as aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, silicon, sapphire, lithium tantalate, lithium niobate, or quartz, (2) alumina, zirconia, Various ceramics such as cordierite, mullite, steatite, or forsterite, (3) magnesia diamond, (4) materials containing the above materials as main components, and (5) mixtures of the above materials as main components. You may be comprised with either of materials.
  • the low acoustic velocity film 226 is a membrane in which the acoustic velocity of the bulk wave in the low acoustic velocity film 226 is lower than the acoustic velocity of the elastic wave propagating through the piezoelectric layer 227.
  • the low acoustic velocity membrane 226 is formed between the piezoelectric layer 227 and the high acoustic velocity support substrate 228. Arranged between. Due to this structure and the property that energy is concentrated in a medium where acoustic waves are essentially low in sound velocity, leakage of surface acoustic wave energy to the outside of the IDT electrode is suppressed.
  • the low acoustic velocity film 226 is, for example, a film mainly composed of silicon dioxide.
  • the thickness of the low acoustic velocity film 226 is 2 ⁇ or less, for example, 505 nm, where ⁇ is the wavelength of the elastic wave determined by the electrode pitch of the IDT electrode 22.
  • the Q value at the resonance frequency and the anti-resonance frequency can be significantly increased as compared with the conventional structure in which the piezoelectric substrate is used as a single layer. That is, since a surface acoustic wave resonator having a high Q value can be configured, a filter with a small insertion loss can be configured using the surface acoustic wave resonator.
  • the high sound velocity support substrate 228 has a structure in which a support substrate and a high sound velocity film in which the sound velocity of a propagating bulk wave is higher than that of a surface wave or boundary wave propagating in the piezoelectric layer 227 is laminated.
  • the support substrate is a piezoelectric material such as sapphire, lithium tantalate, lithium niobate, crystal, alumina, magnesia, silicon nitride, aluminum nitride, silicon carbide, zirconia, cordierite, mullite, steatite, forsterite, etc.
  • the high sound velocity film includes various materials such as aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, silicon oxynitride, DLC film or diamond, a medium mainly composed of the above materials, and a medium mainly composed of a mixture of the above materials. High sound velocity material can be used.
  • the IDT electrode 22 constituting the acoustic wave filter device 21 is formed on the substrate 220 having the piezoelectric layer 227.
  • the substrate on which the IDT electrode 22 is formed is piezoelectric.
  • a piezoelectric substrate made of a single layer of the body layer 227 may be used.
  • the piezoelectric substrate in this case is composed of, for example, a LiTaO 3 piezoelectric single crystal or another piezoelectric single crystal such as LiNbO 3 .
  • the substrate on which the IDT electrode 22 is formed may have a structure in which a piezoelectric layer is laminated on a support substrate in addition to a piezoelectric layer as a whole as long as it has a piezoelectric layer.
  • the piezoelectric layer 227 according to the embodiment is obtained by using a 50 ° Y-cut X-propagation LiTaO 3 single crystal, cut angles of single crystal material is not limited thereto.
  • the laminated structure, material, and thickness may be appropriately changed according to the required pass characteristics of the acoustic wave filter device, and a LiTaO 3 piezoelectric substrate or a LiNbO 3 piezoelectric substrate having a cut angle other than the above is used. The same effect can be achieved even with the conventional surface acoustic wave filter.
  • the wavelength of the surface acoustic wave resonator is defined by a wavelength ⁇ that is a repetition period of the plurality of electrode fingers 222a or 222b constituting the IDT electrode 22 shown in the middle stage of FIG.
  • the electrode pitch is 1 ⁇ 2 of the wavelength ⁇
  • the line width of the electrode fingers 222a and 222b constituting the IDT electrodes 22a and 22b is W
  • the space width between the adjacent electrode fingers 222a and 222b Is defined as (W + S).
  • the crossing width L of the IDT electrode is an overlapping electrode finger length when viewed from the X-axis direction of the electrode finger 222a of the IDT electrode 22a and the electrode finger 222b of the IDT electrode 22b. It is.
  • the electrode duty of each resonator is the line width occupation ratio of the plurality of electrode fingers 222a and 222b, and is the ratio of the line width to the sum of the line width and the space width of the plurality of electrode fingers 222a and 222b. , W / (W + S).
  • FIG. 3 is a circuit configuration diagram illustrating a principle of operation of a ladder-type elastic wave filter and a graph showing frequency characteristics.
  • the elastic wave filter shown in FIG. 3 (a) is a basic ladder type filter composed of one series resonator 50s and one parallel resonator 50p.
  • the parallel resonator 50p has a resonance frequency frp and an anti-resonance frequency fap (> frp) in resonance characteristics.
  • the series resonator 50s has a resonance frequency frs and an anti-resonance frequency fas (> frs> frp) in resonance characteristics.
  • the anti-resonance frequency fap of the parallel resonator 50p and the resonance frequency frs of the series resonator 50s are brought close to each other.
  • the vicinity of the resonance frequency frp in which the impedance of the parallel resonator 50p approaches 0 becomes a low-frequency side stop band.
  • the impedance of the parallel resonator 50p increases near the antiresonance frequency fap, and the impedance of the series resonator 50s approaches 0 near the resonance frequency frs.
  • the signal path from the input / output terminals 100 to 120 becomes a signal pass band. Further, when the frequency becomes high and near the anti-resonance frequency fas, the impedance of the series resonator 50s becomes high, which becomes a high-frequency side blocking region.
  • the number of resonance stages composed of parallel resonators and series resonators is appropriately optimized according to the required specifications.
  • the anti-resonance frequencies fap of the plurality of parallel resonators are substantially matched, and the anti-resonance frequencies fas of the plurality of series resonators are substantially matched.
  • the acoustic wave filter having the above operation principle, when a high-frequency signal is input from the input / output terminal 100, a potential difference is generated between the input / output terminal 100 and the reference terminal, which causes the piezoelectric layer to be distorted, thereby causing an X direction.
  • Surface acoustic waves propagating to the surface are generated.
  • the pitch ⁇ of the IDT electrodes 22a and 22b substantially coincide with the wavelength of the pass band, only a high-frequency signal having a frequency component to be passed passes through the elastic wave filter.
  • FIG. 4 is a cross-sectional view showing a mounting configuration of the acoustic wave filter device 21 according to the embodiment.
  • the acoustic wave filter device 21 shown in the figure includes a substrate 220 having a piezoelectric layer, an IDT electrode 22, an electrode pad 233, a support layer 231, a cover layer 232, an under bump metal 234, and a bump 235. And a mounting board 23 and a resin member 24.
  • the acoustic wave filter device 21 according to the present embodiment has a so-called WLP (Wafer Level Package) structure in which a substrate 220 having an acoustic wave propagation function also serves as a package function, and realizes a reduction in size and height. Yes.
  • WLP structure is applied to a SAW filter such as the elastic wave filter device 21.
  • the IDT electrode 22 is a functional electrode that converts an elastic wave propagating through the substrate 220 into an electric signal, or converts an electric signal into the elastic wave.
  • the electrode pad 233 is electrically connected to the IDT electrode 22, is formed on the surface of the substrate 220, extracts an electric signal converted by the IDT electrode 22, or supplies the electric signal to the IDT electrode 22.
  • the electrode pad 233 is, for example, a stacked body of terminal electrodes 233a and wiring electrodes 233b.
  • the terminal electrode 233 a is an electrode connected to the IDT electrode 22 and is provided around the IDT electrode 22.
  • the terminal electrode 233a is made of the same material as the IDT electrode 22.
  • the wiring electrode 233b is an electrode electrically connected to the terminal electrode 233a, and constitutes a part of a wiring path for connecting the IDT electrode 22 and the external wiring.
  • the terminal electrode 233a and the wiring electrode 233b may be composed of a plurality of laminated bodies composed of metals or alloys.
  • the support layer 231 is a support member formed so as to surround the IDT electrode 22.
  • the cover layer 232 is a cover member formed on the support layer 231.
  • the substrate 220, the support layer 231 and the cover layer 232 seal the IDT electrode 22 in the hollow space 236.
  • a via hole (through hole) reaching the electrode pad 233 is formed in the cover layer 232 and the support layer 231.
  • This via hole is filled with an under bump metal 234.
  • the under bump metal 234 penetrates the cover layer 232 and the support layer 231 and is formed above the substrate 220.
  • a bump 235 exposed to the outside is formed on the under bump metal 234.
  • the bump 235 is formed so as to protrude from the cover layer 232.
  • the bump 235 is a ball-shaped electrode made of a highly conductive metal, and examples thereof include a solder bump made of Sn / Ag / Cu and a bump mainly composed of Au.
  • the mounting board 23 is a board on which the acoustic wave filter is mounted, and is, for example, a printed board or a ceramic board.
  • a land electrode 237 and wiring are formed on one main surface of the mounting substrate 23.
  • the substrate 220 and the IDT electrode 22 are flip-chip mounted (flip chip bonding) on the land electrode 237 of the mounting substrate 23 via bumps 235.
  • the resin member 24 is a sealing member that contacts the main surface of the mounting substrate 23 and covers the substrate 220, the IDT electrode 22, and the cover layer 232.
  • the arrangement of the resin member 24 enhances the reliability of the acoustic wave filter device 21 such as airtightness, heat resistance, water and moisture resistance, and insulation.
  • the resin member 24 is made of a resin such as an epoxy resin, for example.
  • the resin member 24 may include a thermosetting epoxy resin containing an inorganic filler such as SiO 2 .
  • the resin member 24 is not formed in the hollow space 236 but is filled between the cover layer 232 and the mounting substrate 23 and between the plurality of bumps 235.
  • the mounting configuration of the elastic wave filter device 21 according to the present invention is not limited to the mounting configuration described above.
  • the main surface of the piezoelectric substrate on which the IDT electrodes are not formed may be mounted on a mounting substrate with gold bumps or may have a structure other than WLP.
  • an elastic wave filter device 21 includes series resonators 101 to 105, parallel resonators 151 to 154, and input / output terminals 100 and 120.
  • the series resonators 101 to 105 are connected in series between the input / output terminal 100 (first input / output terminal) and 120 (second input / output terminal).
  • the parallel resonators 151 to 154 are connected in parallel to each other between the input / output terminals 100 and 120 and the connection points of the series resonators 101 to 105 and the reference terminal (ground). Due to the above-described connection configuration of the series resonators 101 to 105 and the parallel resonators 151 to 154, the acoustic wave filter device 21 constitutes a ladder type band pass filter.
  • Table 1 shows the design parameters (wavelength ⁇ (electrode pitch ⁇ 2), cross width L, IDT logarithm N, electrode) of the series resonators 101 to 105 and the parallel resonators 151 to 154 of the elastic wave filter device 21 according to the present embodiment. Details of duty D) are shown.
  • FIG. 5 is a graph showing filter pass characteristics and resonance characteristics of the acoustic wave filter device 21 according to the embodiment.
  • the upper part of the figure shows the pass characteristic (insertion loss) between the input / output terminals 100 and 120 of the elastic wave filter device 21 according to the example, and the lower part of the figure shows the elastic characteristic according to the example.
  • the impedance characteristic of each parallel resonator constituting the wave filter device 21 is shown.
  • the antiresonance frequency fap152 of the parallel resonator 152 (third parallel resonator) is equal to the antiresonance of the parallel resonator 151 (first parallel resonator) as shown in the impedance characteristics of FIG. It is lower than the frequency fap 151 and the antiresonance frequency fap 154 of the parallel resonator 154 (second parallel resonator).
  • the antiresonance frequency fap153 of the parallel resonator 153 (fourth parallel resonator) is equal to the antiresonance frequency fap154 of the parallel resonator 154 (second parallel resonator) and the antiresonance frequency fap154 of the parallel resonator 151 (first parallel resonator). It is higher than the resonance frequency fap151.
  • the antiresonance frequencies fap151 and fap154 of the parallel resonators 151 and 154 are set at substantially the center of the passband.
  • the resonance frequency of the parallel resonator 152 is lower than the resonance frequency of the parallel resonator 151 and the parallel resonator 154.
  • the resonance frequency of the parallel resonator 153 is higher than the resonance frequency of the parallel resonator 154 and the parallel resonator 151.
  • FIG. 6 is a graph comparing the filter pass characteristics of the elastic wave filter devices according to the example and the comparative example.
  • the acoustic wave filter device of the comparative example has the ladder-type resonance circuit configuration shown in FIG. 1, but the anti-resonance frequencies of the four parallel resonators are substantially the same frequency and pass band. It is set at almost the center.
  • the pass is narrower than the pass band determined by the electromechanical coupling coefficient of the piezoelectric layer. Even if it is intended to obtain the filter characteristics of the band, the bandwidth becomes too wide. For this reason, for example, as shown in FIG. 6 (broken line), it is not possible to secure an attenuation amount on the low frequency side outside the pass band, and the attenuation specification on the low frequency side defined by the relationship with the adjacent frequency band. Can not be satisfied.
  • the electrode pitch of the parallel resonator 153 (fourth parallel resonator) is closest to the input / output terminal 120 as shown in the resonance characteristics of FIG.
  • the electrode pitch of the parallel resonator 154 (second parallel resonator) and the electrode pitch of the parallel resonator 151 (first parallel resonator) closest to the input / output terminal 100 are made smaller.
  • the antiresonance frequency fap153 of the parallel resonator 153 is shifted to a higher frequency side than the vicinity of the center in the passband.
  • the pass band width on the low pass band side can be narrowed, and the attenuation on the low frequency side outside the pass band can be secured.
  • the electrode pitch of the parallel resonator is the electrode pitch of the parallel resonator 151 (first parallel resonator) closest to the input / output terminal 100 and the parallel resonator 154 (second parallel resonator) closest to the input / output terminal 120. It is larger than the electrode pitch.
  • the anti-resonance frequency fap 152 of the parallel resonator 152 is shifted to the lower frequency side than the vicinity of the center in the pass band.
  • the impedance matching (capacitive and inductive degree) can be adjusted.
  • the electrode pitch of the parallel resonator 151 (first parallel resonator) and 154 (second parallel resonator) is equal to the electrode pitch of the parallel resonator 152 (third parallel resonator) and the parallel resonator 153. It is between the electrode pitches of (fourth parallel resonator). For this reason, the impedance matching at the input / output terminals 100 and 120 of the acoustic wave filter device 21 is not shifted, and an optimized state can be maintained. In other words, in the acoustic wave filter device 21 according to the embodiment of the present invention, a low-loss and narrow-band filter is realized without deteriorating impedance matching with an external circuit at the input / output terminals.
  • the antiresonance frequencies of the other parallel resonators are shifted while the antiresonance frequencies of the closest parallel resonators 151 and 154 are fixed near the center of the pass band.
  • the pass band width on the low pass band side can be narrowed and the attenuation on the low frequency side outside the pass band can be secured.
  • the pass band width can be narrowed, and the attenuation amount on the high frequency side outside the pass band can be secured.
  • the electrode pitch of the parallel resonator 152 (third parallel resonator) is set to the electrode pitch of the parallel resonator 151 (first parallel resonator) that is closest to the input / output terminal 100 and the parallel that is closest to the input / output terminal 120. It is larger than the electrode pitch of the resonator 154 (second parallel resonator).
  • the anti-resonance frequency fap 152 of the parallel resonator 152 is shifted to the lower frequency side than the vicinity of the center in the pass band.
  • the pass band width on the high pass band side can be narrowed, and the attenuation on the high frequency side outside the pass band can be secured.
  • the electrode pitch of the parallel resonator is the electrode pitch of the parallel resonator 154 (second parallel resonator) closest to the input / output terminal 120 and the parallel resonator 151 (first parallel resonator) closest to the input / output terminal 100. It is made smaller than the electrode pitch.
  • the antiresonance frequency fap153 of the parallel resonator 153 is shifted to a higher frequency side than the vicinity of the center in the passband.
  • the impedance matching (capacitive and inductive degree) can be adjusted.
  • the elastic wave filter device 21 obtains a narrow band ladder type filter with good steepness in both the low frequency side and the high frequency side while ensuring low loss in the pass band. It becomes possible.
  • the antiresonance frequency fap152 of the parallel resonator 152 is the antiresonance frequency fap151 of the parallel resonator 151 (first parallel resonator).
  • the parallel resonator 154 (second parallel resonator) is lower than the anti-resonance frequency fap 154, and the parallel resonator 153 (fourth parallel resonator) has an anti-resonance frequency fap 153 of the parallel resonator 154 (second parallel resonator).
  • the relationship between the electrode pitches of the parallel resonators is defined as in Equation 1.
  • the elastic wave filter device according to the present invention is not limited to this.
  • the elastic wave filter device may define the electrode duty of each parallel resonator instead of defining the magnitude relation of the electrode pitch of each parallel resonator. That is, the relationship of the following formula 2 may be satisfied.
  • the antiresonance frequency fap153 of the parallel resonator 153 is shifted to a higher frequency side than the vicinity of the center in the passband.
  • the pass band width on the low pass band side can be narrowed, and the attenuation on the low frequency side outside the pass band can be secured.
  • impedance matching (capacity and inductivity) on the low frequency side of the passband shifts due to the effect of shifting the anti-resonance frequency fap153 of the parallel resonator 153 to the high frequency side.
  • the electrode duty of the parallel resonator 151 (first parallel resonator) closest to the input / output terminal 100 and the parallel resonator 154 (second parallel resonator) closest to the input / output terminal 120 are set. It is larger than the electrode duty.
  • the anti-resonance frequency fap 152 of the parallel resonator 152 is shifted to the lower frequency side than the vicinity of the center in the pass band.
  • the impedance matching (capacitive and inductive degree) can be adjusted.
  • the electrode duty of the parallel resonator 151 (first parallel resonator) and 154 (second parallel resonator) is the same as that of the parallel resonator 152 (third parallel resonator) and the parallel resonator 153 (fourth parallel resonator). It is between the electrode duty of the resonator. For this reason, the impedance matching at the input / output terminals 100 and 120 of the acoustic wave filter device 21 is not shifted, and an optimized state can be maintained. In other words, in the acoustic wave filter device 21 according to the embodiment of the present invention, a low-loss and narrow-band filter is realized without deteriorating impedance matching with an external circuit at the input / output terminals.
  • the antiresonance frequencies of the other parallel resonators are shifted while the antiresonance frequencies of the closest parallel resonators 151 and 154 are fixed near the center of the pass band.
  • the electrode duty of the parallel resonator 152 (third parallel resonator) is set closest to the electrode duty of the parallel resonator 151 (first parallel resonator) closest to the input / output terminal 100 and the input / output terminal 120.
  • the electrode duty of the parallel resonator 154 (second parallel resonator) is larger.
  • the anti-resonance frequency fap 152 of the parallel resonator 152 is shifted to the lower frequency side than the vicinity of the center in the pass band.
  • the pass band width on the high pass band side can be narrowed, and the attenuation on the high frequency side outside the pass band can be secured.
  • the impedance matching (capacity and inductivity) on the high frequency side of the passband shifts due to the effect of shifting the anti-resonance frequency fap152 of the parallel resonator 152 to the low frequency side.
  • the electrode duty of the parallel resonator 154 (second parallel resonator) closest to the input / output terminal 120 and the parallel resonator 151 (first parallel resonance) closest to the input / output terminal 100 are set. Smaller than the electrode duty of the child).
  • the antiresonance frequency fap153 of the parallel resonator 153 is shifted to a higher frequency side than the vicinity of the center in the passband.
  • the impedance matching (capacitive and inductive degree) can be adjusted.
  • the electrode duty is changed as described above, it is possible to obtain a narrow band ladder type filter with good steepness on both the low frequency side and the high frequency side while ensuring low loss in the pass band.
  • the electrode pitches of the parallel resonators 151 to 154 are substantially the same.
  • FIG. 7 is a circuit configuration diagram of the high-frequency front-end circuit 10 and the communication device 1 having the elastic wave filter device 21 according to the embodiment.
  • a high frequency front end circuit 10 an antenna element 2, an impedance matching circuit 5, an RF signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4 are shown.
  • RFIC RF signal processing circuit
  • BBIC baseband signal processing circuit
  • the high-frequency front-end circuit 10, the RF signal processing circuit 3, and the baseband signal processing circuit 4 constitute the communication device 1.
  • the high frequency front end circuit 10 includes elastic wave filter devices 11 and 21, a power amplifier circuit 31, and a low noise amplifier circuit 41.
  • the power amplifier circuit 31 amplifies the high-frequency transmission signal output from the RF signal processing circuit 3 and outputs it to the antenna element 2 via the input / output terminal 110, the elastic wave filter device 11, and the impedance matching circuit 5. It is.
  • the low noise amplifier circuit 41 is a reception amplification circuit that amplifies a high-frequency signal that has passed through the antenna element 2, the impedance matching circuit 5, and the elastic wave filter device 21 and outputs the amplified signal to the RF signal processing circuit 3.
  • the acoustic wave filter device 11 is a filter that is connected to the antenna element 2 via the impedance matching circuit 5 and selectively passes, for example, a high-frequency signal in the Band A transmission band.
  • the acoustic wave filter device 21 is a filter that is connected to the antenna element 2 via the impedance matching circuit 5 and selectively passes, for example, a high-frequency signal in the Band A reception band.
  • the RF signal processing circuit 3 performs signal processing on the high-frequency reception signal input from the antenna element 2 via the reception signal path by down-conversion or the like, and the received signal generated by the signal processing is a baseband signal processing circuit 4. Output to. Further, the RF signal processing circuit 3 performs signal processing on the transmission signal input from the baseband signal processing circuit 4 by up-conversion or the like, and outputs the high-frequency transmission signal generated by the signal processing to the power amplifier circuit 31.
  • the RF signal processing circuit 3 is, for example, an RFIC (Radio Frequency Integrated Circuit).
  • the signal processed by the baseband signal processing circuit 4 is used, for example, for displaying an image as an image signal or for a call as an audio signal.
  • the high-frequency front end circuit 10 may include other circuit elements between the elastic wave filter devices 11 and 21, the power amplifier circuit 31, and the low noise amplifier circuit 41.
  • the elastic wave filter device according to the above embodiment can be applied to at least one of the elastic wave filter devices 11 and 21.
  • the high-frequency front-end circuit 10 having a narrow-band filter having good steepness on both the low-frequency side and the high-frequency side while ensuring a low loss in the passband.
  • the communication device 1 having a narrow band filter with good steepness on both the low frequency side and the high frequency side while ensuring low loss of the pass band.
  • the communication device 1 may not include the baseband signal processing circuit (BBIC) 4 according to the high-frequency signal processing method.
  • BBIC baseband signal processing circuit
  • the elastic wave filter devices 11 and 21 may be duplexers for simultaneously transmitting and receiving the Band A transmission signal and the reception signal.
  • the elastic wave filter devices 11 and 21 do not have to be transmission filters and reception filters in the same band, but may be transmission filters in different bands or reception filters in different bands. That is, the elastic wave filter device 21 according to the present embodiment may be applied to a filter constituting a duplexer or a multiplexer.
  • the acoustic wave filter apparatus which concerns on this invention is not limited to a surface acoustic wave filter, and is comprised with a series resonator and a parallel resonator.
  • An elastic wave filter device using boundary acoustic waves or BAW (Bulk Acoustic Wave) may be used. Also by this, the same effect as the effect which the surface acoustic wave filter concerning the above-mentioned embodiment has is produced.
  • the present invention can be widely used in communication devices such as mobile phones as an elastic wave filter device, a multiplexer, a high-frequency front-end circuit, and a communication device that can be applied to a frequency standard with a narrow bandwidth and a narrow band interval.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

L'invention porte sur un dispositif de filtre à onde élastique de type en échelle (21) comprenant des résonateurs parallèles (151-154) et des résonateurs en série (101-105) formés d'une électrode IDT (22) qui est disposée sur un substrat (220) comportant une couche piézoélectrique (227). Dans les résonateurs parallèles (152 et 153), à l'exception du résonateur parallèle (151) connecté au plus près d'une borne de puissance d'entrée (100) et du résonateur parallèle (154) connecté au plus près d'une borne de puissance de sortie (120) parmi les résonateurs parallèles (151-154), la fréquence anti-résonance fap152 du résonateur parallèle (152) est inférieure aux fréquences anti-résonance fap151 et fap154 des résonateurs parallèles (151 et 154), et la fréquence anti-résonance fap153 du résonateur parallèle (153) est supérieure aux fréquences anti-résonance fap151 et fap154 des résonateurs parallèles (151 et 154).
PCT/JP2017/016619 2016-06-28 2017-04-26 Dispositif de filtre à onde élastique, multiplexeur, circuit frontal haute fréquence et dispositif de communication Ceased WO2018003268A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016128063 2016-06-28
JP2016-128063 2016-06-28

Publications (1)

Publication Number Publication Date
WO2018003268A1 true WO2018003268A1 (fr) 2018-01-04

Family

ID=60786525

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/016619 Ceased WO2018003268A1 (fr) 2016-06-28 2017-04-26 Dispositif de filtre à onde élastique, multiplexeur, circuit frontal haute fréquence et dispositif de communication

Country Status (1)

Country Link
WO (1) WO2018003268A1 (fr)

Cited By (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110365307A (zh) * 2018-03-26 2019-10-22 株式会社村田制作所 多工器
CN111727564A (zh) * 2018-12-28 2020-09-29 株式会社村田制作所 滤波器装置以及多工器
CN112106297A (zh) * 2018-05-14 2020-12-18 株式会社村田制作所 多工器、高频前端电路以及通信装置
WO2021002296A1 (fr) * 2019-07-03 2021-01-07 株式会社村田製作所 Module haute fréquence et dispositif de communication
WO2021006073A1 (fr) * 2019-07-05 2021-01-14 株式会社村田製作所 Filtre de type échelle et dispositif de filtre composite
US20210328568A1 (en) * 2018-06-15 2021-10-21 Resonant Inc. Solidly-mounted transversely-excited film bulk acoustic resonator
WO2022138140A1 (fr) * 2020-12-22 2022-06-30 株式会社村田製作所 Dispositif de filtre composite
US11817840B2 (en) 2018-06-15 2023-11-14 Murata Manufacturing Co., Ltd. XBAR resonators with non-rectangular diaphragms
US11824520B2 (en) 2018-06-15 2023-11-21 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
US11870423B2 (en) 2018-06-15 2024-01-09 Murata Manufacturing Co., Ltd. Wide bandwidth temperature-compensated transversely-excited film bulk acoustic resonator
US11870424B2 (en) 2018-06-15 2024-01-09 Murata Manufacturing Co., Ltd. Filters using transversly-excited film bulk acoustic resonators with frequency-setting dielectric layers
US11876498B2 (en) 2018-06-15 2024-01-16 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method
US11881835B2 (en) 2020-11-11 2024-01-23 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with low thermal impedance
US11901878B2 (en) 2018-06-15 2024-02-13 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with two-layer electrodes with a wider top layer
US11909381B2 (en) 2018-06-15 2024-02-20 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer
US11916539B2 (en) 2020-02-28 2024-02-27 Murata Manufacturing Co., Ltd. Split-ladder band N77 filter using transversely-excited film bulk acoustic resonators
US11949399B2 (en) 2018-06-15 2024-04-02 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in Bragg reflector stack
US11949403B2 (en) 2019-08-28 2024-04-02 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch
US11955952B2 (en) 2019-06-24 2024-04-09 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited bulk acoustic resonator split ladder filter
US11967942B2 (en) 2018-06-15 2024-04-23 Murata Manufacturing Co., Ltd Transversely-excited film bulk acoustic filters with symmetric layout
US11967946B2 (en) 2020-02-18 2024-04-23 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with a bonding layer and an etch-stop layer
US11984868B2 (en) 2018-06-15 2024-05-14 Murata Manufacturing Co., Ltd. Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer
US11990888B2 (en) 2018-06-15 2024-05-21 Murata Manufacturing Co., Ltd. Resonator using YX-cut lithium niobate for high power applications
US11996825B2 (en) 2020-06-17 2024-05-28 Murata Manufacturing Co., Ltd. Filter using lithium niobate and rotated lithium tantalate transversely-excited film bulk acoustic resonators
US11996822B2 (en) 2018-06-15 2024-05-28 Murata Manufacturing Co., Ltd. Wide bandwidth time division duplex transceiver
US12003226B2 (en) 2020-11-11 2024-06-04 Murata Manufacturing Co., Ltd Transversely-excited film bulk acoustic resonator with low thermal impedance
US12009798B2 (en) 2018-06-15 2024-06-11 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with electrodes having irregular hexagon cross-sectional shapes
US12015393B2 (en) 2018-06-15 2024-06-18 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with diaphragm support pedestals
US12021496B2 (en) 2020-08-31 2024-06-25 Murata Manufacturing Co., Ltd. Resonators with different membrane thicknesses on the same die
US12028040B2 (en) 2020-07-18 2024-07-02 Murata Manufacturing Co., Ltd. Acoustic resonators and filters with reduced temperature coefficient of frequency
US12034428B2 (en) 2018-06-15 2024-07-09 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic filter using pitch to establish frequency separation between resonators
US12040778B2 (en) 2018-06-15 2024-07-16 Murata Manufacturing Co., Ltd. High frequency, high power film bulk acoustic resonators
US12040783B2 (en) 2020-04-20 2024-07-16 Murata Manufacturing Co., Ltd. Low loss transversely-excited film bulk acoustic resonators and filters
US12040779B2 (en) 2020-04-20 2024-07-16 Murata Manufacturing Co., Ltd. Small transversely-excited film bulk acoustic resonators with enhanced Q-factor
US12081187B2 (en) 2018-06-15 2024-09-03 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator
US12088280B2 (en) 2018-06-15 2024-09-10 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package
US12088270B2 (en) 2019-04-05 2024-09-10 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package and method
US12088281B2 (en) 2021-02-03 2024-09-10 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multi-mark interdigital transducer
US12095448B2 (en) 2018-06-15 2024-09-17 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package and method
US12113512B2 (en) 2021-03-29 2024-10-08 Murata Manufacturing Co., Ltd. Layout of XBARs with multiple sub-resonators in parallel
US12119805B2 (en) 2018-06-15 2024-10-15 Murata Manufacturing Co., Ltd. Substrate processing and membrane release of transversely-excited film bulk acoustic resonator using a sacrificial tub
US12155371B2 (en) 2021-03-29 2024-11-26 Murata Manufacturing Co., Ltd. Layout of xbars with multiple sub-resonators in series
US12184261B2 (en) 2018-06-15 2024-12-31 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with a cavity having round end zones
US12191838B2 (en) 2018-06-15 2025-01-07 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited film bulk acoustic device and method
US12191837B2 (en) 2018-06-15 2025-01-07 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited film bulk acoustic device
US12212306B2 (en) 2018-06-15 2025-01-28 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method
US12224732B2 (en) 2018-06-15 2025-02-11 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited film bulk acoustic resonators and filters for 27 GHz communications bands
US12255625B2 (en) 2020-02-28 2025-03-18 Murata Manufacturing Co., Ltd. Filter using transversely-excited film bulk acoustic resonators with inductively coupled sub-resonators
US12267064B2 (en) 2018-06-15 2025-04-01 Murata Manufacturing Co., Ltd. Filter using transversely-excited film bulk acoustic resonators with multiple frequency setting layers
US12283944B2 (en) 2018-06-15 2025-04-22 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with recessed rotated-Y-X cut lithium niobate
US12283943B2 (en) 2020-06-17 2025-04-22 Murata Manufacturing Co., Ltd. Filter using lithium niobate and lithium tantalate transversely-excited film bulk acoustic resonators
US12289094B2 (en) 2020-06-30 2025-04-29 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with symmetric diaphragm
US12301212B2 (en) 2018-06-15 2025-05-13 Murata Manufacturing Co., Ltd. XBAR resonators with non-rectangular diaphragms
US12341490B2 (en) 2020-04-20 2025-06-24 Murata Manufacturing Co., Ltd. Low loss transversely-excited film bulk acoustic resonators and filters

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005045475A (ja) * 2003-07-28 2005-02-17 Murata Mfg Co Ltd 弾性表面波装置、通信機
JP2011114826A (ja) * 2009-11-30 2011-06-09 Taiyo Yuden Co Ltd フィルタ、分波器、通信モジュール
WO2015080045A1 (fr) * 2013-11-29 2015-06-04 株式会社村田製作所 Diviseur

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005045475A (ja) * 2003-07-28 2005-02-17 Murata Mfg Co Ltd 弾性表面波装置、通信機
JP2011114826A (ja) * 2009-11-30 2011-06-09 Taiyo Yuden Co Ltd フィルタ、分波器、通信モジュール
WO2015080045A1 (fr) * 2013-11-29 2015-06-04 株式会社村田製作所 Diviseur

Cited By (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110365307B (zh) * 2018-03-26 2023-02-28 株式会社村田制作所 多工器
CN110365307A (zh) * 2018-03-26 2019-10-22 株式会社村田制作所 多工器
CN112106297B (zh) * 2018-05-14 2024-04-26 株式会社村田制作所 多工器、高频前端电路以及通信装置
CN112106297A (zh) * 2018-05-14 2020-12-18 株式会社村田制作所 多工器、高频前端电路以及通信装置
US11996822B2 (en) 2018-06-15 2024-05-28 Murata Manufacturing Co., Ltd. Wide bandwidth time division duplex transceiver
US12267064B2 (en) 2018-06-15 2025-04-01 Murata Manufacturing Co., Ltd. Filter using transversely-excited film bulk acoustic resonators with multiple frequency setting layers
US12119805B2 (en) 2018-06-15 2024-10-15 Murata Manufacturing Co., Ltd. Substrate processing and membrane release of transversely-excited film bulk acoustic resonator using a sacrificial tub
US11870423B2 (en) 2018-06-15 2024-01-09 Murata Manufacturing Co., Ltd. Wide bandwidth temperature-compensated transversely-excited film bulk acoustic resonator
US11870424B2 (en) 2018-06-15 2024-01-09 Murata Manufacturing Co., Ltd. Filters using transversly-excited film bulk acoustic resonators with frequency-setting dielectric layers
US11876498B2 (en) 2018-06-15 2024-01-16 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method
US12191838B2 (en) 2018-06-15 2025-01-07 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited film bulk acoustic device and method
US12095445B2 (en) 2018-06-15 2024-09-17 Murata Manufacturing Co., Ltd. High power acoustic resonators
US12095448B2 (en) 2018-06-15 2024-09-17 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package and method
US12525952B2 (en) 2018-06-15 2026-01-13 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized piezoelectric plate thickness and electrode mark and pitch
US11888465B2 (en) 2018-06-15 2024-01-30 Murata Manufacturing Co., Ltd. Bandpass filter with frequency separation between shunt and series resonators set by dielectric layer thickness
US11901878B2 (en) 2018-06-15 2024-02-13 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with two-layer electrodes with a wider top layer
US11909381B2 (en) 2018-06-15 2024-02-20 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer
US12348215B2 (en) 2018-06-15 2025-07-01 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator using YX-cut lithium niobate for high power applications
US11929735B2 (en) 2018-06-15 2024-03-12 Murata Manufacturing Co., Ltd. XBAR resonators with non-rectangular diaphragms
US11942922B2 (en) 2018-06-15 2024-03-26 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
US11949399B2 (en) 2018-06-15 2024-04-02 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in Bragg reflector stack
US12191837B2 (en) 2018-06-15 2025-01-07 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited film bulk acoustic device
US12088272B2 (en) * 2018-06-15 2024-09-10 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited film bulk acoustic resonator
US11967942B2 (en) 2018-06-15 2024-04-23 Murata Manufacturing Co., Ltd Transversely-excited film bulk acoustic filters with symmetric layout
US12088280B2 (en) 2018-06-15 2024-09-10 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package
US11967945B2 (en) 2018-06-15 2024-04-23 Murata Manufacturing Co., Ltd. Transversly-excited film bulk acoustic resonators and filters
US11817840B2 (en) 2018-06-15 2023-11-14 Murata Manufacturing Co., Ltd. XBAR resonators with non-rectangular diaphragms
US11984868B2 (en) 2018-06-15 2024-05-14 Murata Manufacturing Co., Ltd. Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer
US11990888B2 (en) 2018-06-15 2024-05-21 Murata Manufacturing Co., Ltd. Resonator using YX-cut lithium niobate for high power applications
US12081187B2 (en) 2018-06-15 2024-09-03 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator
US12301212B2 (en) 2018-06-15 2025-05-13 Murata Manufacturing Co., Ltd. XBAR resonators with non-rectangular diaphragms
US12184261B2 (en) 2018-06-15 2024-12-31 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with a cavity having round end zones
US11824520B2 (en) 2018-06-15 2023-11-21 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
US12212306B2 (en) 2018-06-15 2025-01-28 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method
US12283944B2 (en) 2018-06-15 2025-04-22 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with recessed rotated-Y-X cut lithium niobate
US12015393B2 (en) 2018-06-15 2024-06-18 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with diaphragm support pedestals
US12021503B2 (en) 2018-06-15 2024-06-25 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized piezoelectric plate thickness and having multiple pitches and marks
US12224732B2 (en) 2018-06-15 2025-02-11 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited film bulk acoustic resonators and filters for 27 GHz communications bands
US12021504B2 (en) 2018-06-15 2024-06-25 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with a front-side dielectric layer and optimized pitch and mark
US12021502B2 (en) 2018-06-15 2024-06-25 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multi-mark electrodes and optimized electrode thickness
US20210328568A1 (en) * 2018-06-15 2021-10-21 Resonant Inc. Solidly-mounted transversely-excited film bulk acoustic resonator
US12009798B2 (en) 2018-06-15 2024-06-11 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with electrodes having irregular hexagon cross-sectional shapes
US12034428B2 (en) 2018-06-15 2024-07-09 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic filter using pitch to establish frequency separation between resonators
US12040778B2 (en) 2018-06-15 2024-07-16 Murata Manufacturing Co., Ltd. High frequency, high power film bulk acoustic resonators
CN111727564B (zh) * 2018-12-28 2024-01-19 株式会社村田制作所 滤波器装置以及多工器
CN111727564A (zh) * 2018-12-28 2020-09-29 株式会社村田制作所 滤波器装置以及多工器
US12095438B2 (en) 2019-04-05 2024-09-17 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package and method
US12095437B2 (en) 2019-04-05 2024-09-17 Murata Manufacturing Co., Ltd. Method of fabricating transversely-excited film bulk acoustic resonator
US12119798B2 (en) 2019-04-05 2024-10-15 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package and method
US12088270B2 (en) 2019-04-05 2024-09-10 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package and method
US11955952B2 (en) 2019-06-24 2024-04-09 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited bulk acoustic resonator split ladder filter
US12113517B2 (en) 2019-06-24 2024-10-08 Murata Manufacturing Co., Ltd. Transversely-excited bulk acoustic resonator split ladder filter
US12199052B2 (en) 2019-07-03 2025-01-14 Murata Manufacturing Co., Ltd. Radio-frequency module and communication device
WO2021002296A1 (fr) * 2019-07-03 2021-01-07 株式会社村田製作所 Module haute fréquence et dispositif de communication
WO2021006073A1 (fr) * 2019-07-05 2021-01-14 株式会社村田製作所 Filtre de type échelle et dispositif de filtre composite
US12278620B2 (en) 2019-07-05 2025-04-15 Murata Manufacturing Co., Ltd. Ladder filter and composite filter device
US11949403B2 (en) 2019-08-28 2024-04-02 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch
US12009804B2 (en) 2019-08-28 2024-06-11 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch
US12081198B2 (en) 2020-02-18 2024-09-03 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with a back-side dielectric layer and an etch-stop layer
US11996826B2 (en) 2020-02-18 2024-05-28 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with thermally conductive etch-stop layer
US11967946B2 (en) 2020-02-18 2024-04-23 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with a bonding layer and an etch-stop layer
US12028049B2 (en) 2020-02-28 2024-07-02 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator filters with sub-resonators having different mark and pitch
US12255625B2 (en) 2020-02-28 2025-03-18 Murata Manufacturing Co., Ltd. Filter using transversely-excited film bulk acoustic resonators with inductively coupled sub-resonators
US11916539B2 (en) 2020-02-28 2024-02-27 Murata Manufacturing Co., Ltd. Split-ladder band N77 filter using transversely-excited film bulk acoustic resonators
US12341490B2 (en) 2020-04-20 2025-06-24 Murata Manufacturing Co., Ltd. Low loss transversely-excited film bulk acoustic resonators and filters
US12255618B2 (en) 2020-04-20 2025-03-18 Murata Manufacturing Co., Ltd. Small transversely-excited film bulk acoustic resonators with enhanced Q-factor
US12040779B2 (en) 2020-04-20 2024-07-16 Murata Manufacturing Co., Ltd. Small transversely-excited film bulk acoustic resonators with enhanced Q-factor
US12040783B2 (en) 2020-04-20 2024-07-16 Murata Manufacturing Co., Ltd. Low loss transversely-excited film bulk acoustic resonators and filters
US12341493B2 (en) 2020-04-20 2025-06-24 Murata Manufacturing Co., Ltd. Low loss transversely-excited film bulk acoustic resonators and filters
US12283943B2 (en) 2020-06-17 2025-04-22 Murata Manufacturing Co., Ltd. Filter using lithium niobate and lithium tantalate transversely-excited film bulk acoustic resonators
US11996825B2 (en) 2020-06-17 2024-05-28 Murata Manufacturing Co., Ltd. Filter using lithium niobate and rotated lithium tantalate transversely-excited film bulk acoustic resonators
US12289094B2 (en) 2020-06-30 2025-04-29 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with symmetric diaphragm
US12028040B2 (en) 2020-07-18 2024-07-02 Murata Manufacturing Co., Ltd. Acoustic resonators and filters with reduced temperature coefficient of frequency
US12021496B2 (en) 2020-08-31 2024-06-25 Murata Manufacturing Co., Ltd. Resonators with different membrane thicknesses on the same die
US12003226B2 (en) 2020-11-11 2024-06-04 Murata Manufacturing Co., Ltd Transversely-excited film bulk acoustic resonator with low thermal impedance
US11881835B2 (en) 2020-11-11 2024-01-23 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with low thermal impedance
WO2022138140A1 (fr) * 2020-12-22 2022-06-30 株式会社村田製作所 Dispositif de filtre composite
US12388418B2 (en) 2020-12-22 2025-08-12 Murata Manufacturing Co., Ltd. Composite filter device
US12088281B2 (en) 2021-02-03 2024-09-10 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multi-mark interdigital transducer
US12489421B2 (en) 2021-02-03 2025-12-02 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multi-mark, multi-pitch interdigital transducer
US12155371B2 (en) 2021-03-29 2024-11-26 Murata Manufacturing Co., Ltd. Layout of xbars with multiple sub-resonators in series
US12113512B2 (en) 2021-03-29 2024-10-08 Murata Manufacturing Co., Ltd. Layout of XBARs with multiple sub-resonators in parallel

Similar Documents

Publication Publication Date Title
WO2018003268A1 (fr) Dispositif de filtre à onde élastique, multiplexeur, circuit frontal haute fréquence et dispositif de communication
CN109478880B (zh) 多工器、高频前端电路及通信装置
JP6590069B2 (ja) マルチプレクサ、高周波フロントエンド回路及び通信装置
JP6790907B2 (ja) マルチプレクサ、送信装置および受信装置
JP6658070B2 (ja) マルチプレクサ、送信装置および受信装置
JP6690608B2 (ja) マルチプレクサ、高周波フロントエンド回路および通信装置
JP4943137B2 (ja) 分波器および通信装置
US10812050B2 (en) Multiplexer, radio-frequency (RF) front-end circuit, and communication apparatus
KR102043411B1 (ko) 멀티플렉서, 고주파 프론트 엔드 회로 및 통신 장치
JP6773238B2 (ja) 弾性波フィルタ、マルチプレクサ、高周波フロントエンド回路および通信装置
JP2022075959A (ja) 弾性波フィルタ
US10715111B2 (en) Elastic wave filter device and duplexer
WO2011016332A1 (fr) Duplexeur
JP2010011300A (ja) 共振器、該共振器を用いるフィルタ及びデュプレクサ
US11405021B2 (en) Filter device and multiplexer
WO2018092511A1 (fr) Filtre d'ondes acoustiques de surface et multiplexeur
JP6489294B1 (ja) マルチプレクサ、送信装置および受信装置
US11558072B2 (en) Multiplexer
WO2007049754A1 (fr) Appareil a ondes acoustiques de surface et appareil de communication
US10651822B2 (en) Multiplexer
JPH06350391A (ja) 弾性表面波装置
WO2018212025A1 (fr) Multiplexeur, dispositif de transmission et dispositif de réception
WO2018212105A1 (fr) Multiplexeur, dispositif de transmission et dispositif de réception
JP2006101550A (ja) 弾性表面波デバイス及びこれを用いた通信装置、並びにアンテナデュプレクサ
JP2024003954A (ja) 複合フィルタ及び通信装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17819635

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17819635

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP