[go: up one dir, main page]

WO2018061517A1 - Module de puissance, son procédé de production et convertisseur de puissance électrique - Google Patents

Module de puissance, son procédé de production et convertisseur de puissance électrique Download PDF

Info

Publication number
WO2018061517A1
WO2018061517A1 PCT/JP2017/029727 JP2017029727W WO2018061517A1 WO 2018061517 A1 WO2018061517 A1 WO 2018061517A1 JP 2017029727 W JP2017029727 W JP 2017029727W WO 2018061517 A1 WO2018061517 A1 WO 2018061517A1
Authority
WO
WIPO (PCT)
Prior art keywords
power module
conductor layer
cooler
circuit board
module according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2017/029727
Other languages
English (en)
Japanese (ja)
Inventor
畑中　康道
真之介 曽田
昌樹 田屋
穂隆 六分一
平松　星紀
祥 小杉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of WO2018061517A1 publication Critical patent/WO2018061517A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H10W40/47—
    • H10W74/10—
    • H10W74/40—
    • H10W90/00—
    • H10W72/07351—
    • H10W72/30—
    • H10W74/00—

Definitions

  • the present invention relates to a molded resin-encapsulated power module provided with a cooler, a manufacturing method thereof, and a power conversion device provided with the power module.
  • an active element soldered to a conductor in contact with one surface of a ceramic substrate is sealed with a mold resin, and has a conductor film formed on the other surface of the ceramic substrate.
  • a power module is disclosed in which the peripheral portion of the surface of the ceramic substrate on which the conductor film is formed is covered and the conductor film and the cooler are joined (for example, Patent Document 1).
  • the difference in the thermal expansion coefficient between the power module and the cooler is large at the metal joint portion between the conductor layer exposed portion of the ceramic substrate and the cooler of the power module in which the ceramic substrate is sealed with mold resin.
  • peeling occurs at the metal joint due to thermal stress such as temperature cycle.
  • the present invention has been made to solve the above-described problems, and an object thereof is to obtain a power module in which the reliability of a metal joint portion between an insulating circuit board sealed with a mold resin and a cooler is improved. Yes.
  • the power module according to the present invention has a conductor layer on an upper surface and a lower surface, an insulating substrate on which a semiconductor element is mounted on the upper conductor layer, and the lower conductor layer has a flat portion on a lower side and a side portion on a side surface. And a sealing resin that seals the insulating substrate by exposing the flat surface portion and a part of the side surface portion, and a bonding material that bonds the flat surface portion exposed from the sealing resin and a part of the side surface portion. And a cooler bonded to the insulating substrate through a bonding material.
  • FIG. 1 is a schematic plan view showing a power module according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic cross-sectional structure diagram showing the power module according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic diagram of a cross-sectional structure taken along one-dot chain line AA in FIG.
  • a power module 100 includes an insulating circuit board 4, a semiconductor element 5, an electrode terminal 6, a molding resin 7 that is a sealing resin, a bonding material 8, and a cooler 9.
  • the insulated circuit board 4 includes a ceramic plate 1 that is an insulated substrate and conductor layers 2 and 3 formed on the upper and lower surfaces of the ceramic plate 1.
  • a ceramic plate 1 silicon nitride (Si 3 N 4 ), aluminum nitride (AlN), alumina, or Zr-containing alumina can be used.
  • AlN and Si 3 N 4 are preferable from the viewpoint of thermal conductivity, and Si 3 N 4 is more preferable from the viewpoint of material strength.
  • the conductor layers 2 and 3 formed on both surfaces (upper surface and lower surface) of the ceramic plate 1 are made of metal having the same dimensions (size) and thickness. However, since an electric circuit is formed on each of the conductor layers 2 and 3, the pattern shape may be different.
  • the conductor layers 2 and 3 are smaller than the ceramic plate 1. By making the size of the conductor layers 2 and 3 smaller than that of the ceramic plate 1, the creeping distance between the conductor layers 2 and 3 can be increased (secured). Further, by making the size of the conductor layer 3 smaller than that of the ceramic plate 1, the sealing resin 7 can be made to wrap around the ceramic plate 1.
  • metals having excellent electrical conductivity and thermal conductivity for example, aluminum and aluminum alloys, copper and copper alloys can be used. In particular, it is preferable to use copper from the viewpoints of heat conduction and electric conduction.
  • the semiconductor element 5 On the conductor layer 2 on the upper surface side of the ceramic plate 1, the semiconductor element 5 is electrically joined, for example, as a joining material 8 via solder.
  • a power control semiconductor element switching element
  • MOSFET Metal Oxide Semiconductor Field Effect Transistor
  • silicon carbide SiC
  • Si silicon carbide
  • SiC silicon carbide
  • Si semiconductor elements or SiC semiconductor elements using these as substrate materials are applied.
  • the thickness of the SiC semiconductor element is preferably 0.08 to 0.2 mm. In order to reduce the thickness of the SiC semiconductor element to less than 0.08 mm, it takes time and cost to grind a very hard SiC wafer. Further, when the thickness of the SiC semiconductor element is larger than 0.2 mm, the heat dissipation of the SiC semiconductor element is lowered and the thermal stress at the interface with the sealing resin is increased. Therefore, the thickness of the SiC semiconductor element is preferably in the range of 0.08 to 0.2 mm.
  • solder is usually used as the bonding material 8 for bonding the semiconductor element 5 and the conductor layer 2 on the upper surface side of the insulating circuit board 4.
  • the bonding material 8 may be sintered silver or a liquid phase diffusion material. Sintered silver or a liquid phase diffusion material has a melting temperature higher than that of a solder material, and does not remelt when the cooler 9 and the conductor layer 3 on the lower surface side of the insulated circuit board 4 are joined. And the bonding reliability of the insulating circuit board 4 is improved.
  • the operating temperature of the power module 100 can be increased. Since sintered silver has better thermal conductivity than solder, the heat dissipation of the semiconductor element 5 is improved and the reliability is improved. Since the liquid phase diffusion material can be bonded with a lower load than sintered silver, the processability is good, and the influence of damage to the semiconductor element 5 due to the bonding load can be prevented.
  • the electrode terminal 6 is bonded to a predetermined electrode terminal 6 bonding position on the semiconductor element 5.
  • the electrode terminal 6 is also bonded to a predetermined electrode terminal 6 bonding position on the conductor layer 2 on the upper surface side of the insulated circuit board 4.
  • the electrode terminal 6 has a structure protruding from the side surface of the mold resin 7 to the outside.
  • a copper plate having a thickness of 0.5 mm processed into a predetermined shape by etching or die punching can be used as the electrode terminal 6, for example.
  • the conductor layer 3 on the lower surface side of the insulated circuit board 4 to which the semiconductor element 5 is not bonded includes a flat surface portion 31 on the lower side opposite to the surface in contact with the ceramic plate 1 and a side surface portion 32 on the side surface.
  • the conductor layer 3 is sealed with the mold resin 7 so that the lower flat portion 31 and a part of the side portion 32 on the side surface are exposed.
  • the exposed flat portion 31 and part of the side surface portion 32 of the conductor layer 3 are bonded to the cooler 9 using the bonding material 8.
  • the bonding material 8 is formed not only on the flat surface portion 31 of the conductor layer 3 but also on a part of the side surface portion 32 of the conductor layer 3.
  • the bonding material 8 is formed to a position (height) that contacts the portion of the mold resin 7 on the cooler 9 side (the bottom portion of the mold resin 7). However, as a position where the bonding material 8 is formed, the bonding material 8 may come into contact (climb up) on the mold resin 7, and the side surface portion 32 may be formed without contact between the mold resin 7 and the bonding material 8. It may be formed away from the top.
  • Mold resin 7 seals a part of insulating substrate 1, conductor layer 2, and side surface portion 32 of conductor layer 3 described above.
  • the mold resin 7 for example, an epoxy resin / phenol resin curing agent type mold resin filled with silica particles can be used.
  • solder can be used as the bonding material 8 between the conductor layer 3 on the lower surface side of the insulating circuit board 4 and the cooler 9.
  • solder a Sn—Sb composition type solder material is preferable from the viewpoint of bonding reliability.
  • sintered silver or a liquid phase diffusion material is applied in addition to the solder as in the case of joining the semiconductor element 5 and the insulated circuit board 4. Is possible.
  • the solder shape of the junction part of the side part 32 of the conductor layer 3 and the cooler 9 becomes a taper (fillet) shape which gave the inclination.
  • the taper shape of the solder which is the bonding material 8 is a shape that expands from the insulating substrate 1 side of the side surface portion 32 of the conductor layer 3 toward the outer peripheral side of the cooler 9 (bottoming). That is, the solder shape of the joint portion between the side surface portion 32 of the conductor layer 3 and the cooler 9 is a shape in which the width on the cooler 9 side is wider than the width on the insulating substrate 1 side in a sectional view.
  • liquid phase diffusion material a Cu—Sn composition system material or a Cu—Ag composition system material is preferable from the viewpoint of bonding reliability. Since sintered silver has better thermal conductivity than solder, the heat dissipation of the power module 100 is improved and the reliability is improved. In addition, since the liquid phase diffusion material can be bonded with a lower load than sintered silver, the processability is good, and the influence of damage to the power module 100 due to the bonding load can be prevented.
  • the cooler 9 can be made of, for example, a composite material made of aluminum and ceramics such as aluminum and aluminum alloy, copper and copper alloy, and AlSiC. In particular, aluminum and aluminum alloys are preferable from the viewpoints of thermal conductivity, workability, and light weight. Inside the cooler 9, a flow path for flowing a cooling refrigerant is formed. In FIG. 2, it is possible to cool more efficiently by providing a plurality of cooling pins 91.
  • the structure of the cooler 9 is not limited to this structure, and any structure that can be cooled is applicable.
  • FIGS. 3 to 11 are schematic cross-sectional views showing the manufacturing steps of the power module according to Embodiment 1 of the present invention.
  • FIG. 3 is a schematic cross-sectional structure diagram illustrating the manufacturing process of the power module according to Embodiment 1 of the present invention.
  • FIG. 4 is a schematic cross-sectional structure diagram showing the manufacturing process of the power module in the first embodiment of the present invention.
  • FIG. 5 is a schematic cross-sectional structure diagram illustrating the manufacturing process of the power module according to Embodiment 1 of the present invention.
  • FIG. 6 is a schematic cross-sectional structure diagram illustrating the manufacturing process of the power module according to Embodiment 1 of the present invention.
  • FIG. 3 is a schematic cross-sectional structure diagram illustrating the manufacturing process of the power module according to Embodiment 1 of the present invention.
  • FIG. 7 is a schematic cross-sectional structure diagram showing the manufacturing process of the power module according to Embodiment 1 of the present invention.
  • FIG. 8 is a schematic cross-sectional structure diagram illustrating the manufacturing process of the power module according to Embodiment 1 of the present invention.
  • FIG. 9 is a schematic cross-sectional structure diagram illustrating the manufacturing process of the power module according to Embodiment 1 of the present invention.
  • FIG. 10 is a schematic cross-sectional structure diagram showing the manufacturing process of the power module according to Embodiment 1 of the present invention.
  • FIG. 11 is a schematic cross-sectional structure diagram showing the manufacturing process of the power module in the first embodiment of the present invention.
  • the power module 100 can be manufactured through the steps of FIGS.
  • the conductor layer 2 is formed on the upper surface of the ceramic plate 1, and the conductor layer 3 is formed on the lower surface (insulating circuit board forming step).
  • the ceramic plate 1 and the conductor layers 2 and 3 are joined by brazing or the like.
  • the conductor layers 2 and 3 are formed using metal layers having the same size and thickness.
  • the formation positions of the conductor layers 2 and 3 on the ceramic plate 1 are symmetrical (same) positions with the ceramic plate 1 interposed therebetween.
  • the pattern shape may be different.
  • the conductor layer 3 has a flat surface portion 31 opposite to the surface of the conductor layer 3 on the lower surface side of the insulated circuit board 4 that is in contact with the ceramic plate 1 and a side surface portion 32 of the conductor layer 3.
  • the semiconductor element 5 and the electrode terminal 6 are placed at predetermined positions (semiconductor element 5 arrangement region or electrode terminal 6 arrangement region) on the conductor layer 2 on the upper surface of the insulating circuit substrate 4. It electrically joins using the solder which is the joining material 8.
  • the electrode terminal 6 is electrically bonded to a predetermined position on the semiconductor element 5 (electrode terminal 6 arrangement region) using solder which is the bonding material 8 (member bonding step).
  • an electrical circuit is formed by joining the semiconductor element 5 and the electrode terminal 6 on the insulating circuit substrate 4.
  • the insulated circuit board 4 produced in the previous step is fixed in a mold processed into a predetermined shape and sealed with a mold resin 7.
  • the insulating circuit board 4 is placed on the lower mold 12, the upper mold 11 is placed on the lower mold 12, the mold resin 7 is press-fitted, and the press-fitted mold resin 7 is cured. I do.
  • the lower mold 12 is prepared (lower mold installation step), and the conductor layer 3 of the insulated circuit board 4 in which the semiconductor element 5 and the electrode terminal 6 are joined on the conductor layer 2 is formed in the lower mold. 12 is inserted into the lower mold cavity 13 which is an inset portion formed in the insulating portion 12 (insulating circuit board installation step).
  • the lower mold cavity 13 includes a lower flat portion 31 on the opposite side of the surface of the conductor layer 3 on the lower surface side of the insulating circuit board 4 that is in contact with the ceramic plate 1 and a side portion 32 on the side surface of the conductor layer 3. It is for fitting the part.
  • the portion of the conductor layer 3 (a part of the flat surface portion 31 and the side surface portion 32) fitted in the lower mold cavity 13 is not sealed with the mold resin 7 after the resin sealing, and is exposed from the mold resin 7. It becomes an area. Further, the portion exposed from the lower mold cavity 13 of the conductor layer 3 is sealed with a mold resin 7 after sealing with resin.
  • the lower mold 12 and the upper mold 11 are combined and the upper and lower molds are closed to dispose the insulating circuit board 4 inside the upper mold 11 and the lower mold 12.
  • the upper mold 11 and the lower mold 12 are fixed in a state where a part of the electrode terminal 6 protrudes from the side surface of the mold (upper mold installation step).
  • the electrode terminal 6 can be exposed to the outside of the mold resin 7 after sealing with the mold resin 7.
  • the electrode terminal 6 may be configured to have a bent portion in accordance with a protruding position from the mold resin 7 (not shown).
  • a mold resin 7 is press-fitted into a mold in which the insulating circuit board 4 is disposed.
  • a state in which the mold resin 7 is being press-fitted from the right side to the left side indicated by an arrow is shown.
  • the mold resin 7 for example, an epoxy resin / phenol resin curing agent resin (thermal expansion coefficient 12 ppm / K) filled with silica particles can be used (resin sealing step). Moreover, it can seal with the mold resin 7 by pressing-in the mold resin 7 in a metal mold
  • the mold resin 7 that has been press-fitted in the state where the insulating circuit board 4 is disposed in the mold is cured.
  • the curing treatment condition for the mold resin 7 is performed at 180 ° C. for 3 minutes (first resin curing step).
  • the press-fitted mold resin 7 is cured by performing the curing process.
  • the insulating circuit board 4 that has been sealed with the mold resin 7 is taken out from the upper and lower molds (insulating circuit board removing step).
  • the mold resin 7 is in a state in which the entire upper surface side of the insulating circuit substrate 4 and a part of the side surface portion 32 of the conductor layer 3 on the lower surface side of the insulating circuit substrate 4 are sealed.
  • the planar portion 31 and part of the side surface portion 32 of the conductor layer 3 are exposed from the mold resin 7.
  • the position of the mold resin 7 on the side surface portion 32 of the conductor layer 3 is such that when the insulating circuit board 4 is placed on the lower mold 12, the amount of insertion (depth) of the lower mold cavity 13 in which the conductor layer 3 is installed. Determined by.
  • the depth of the lower mold cavity 13 determines the exposure amount of the side surface portion 32 of the conductor layer 3 from the mold resin 7. Then, by adjusting the depth of the lower mold cavity 13, desired characteristics (peeling characteristics, insulating characteristics) can be obtained.
  • the insulating circuit board 4 sealed with the mold resin 7 taken out from the upper and lower molds shown in FIG. 9 is subjected to a curing treatment of the mold resin 7 in an oven at 175 ° C. for 6 hours (second process). Resin curing step). Through these steps, the insulated circuit board 4 sealed with the mold resin 7 is completed.
  • the insulating circuit board 4 resin-sealed with the mold resin 7 is fixed to a predetermined position of the cooler 9 with a jig through the bonding material 8 (cooling).
  • Container placement step ).
  • the bonding material 8 is melted and exposed from the mold resin 7 by reflowing the bonding material 8 using a reflow furnace as shown in FIG. 11.
  • the plane portion 31 and part of the side surface portion 32 (exposed portion) of the conductor layer 3 on the lower surface side of the insulated circuit board 4 are bonded to the cooler 9 via the bonding material 8 (cooler bonding step).
  • the power module 100 can be manufactured through the above main manufacturing processes.
  • the basic structure of the power module 100 used for the evaluation is as follows.
  • a Si semiconductor element As the semiconductor element 5, a Si semiconductor element is used. Then, a 0.1 mm-thick Si semiconductor element is joined to a predetermined position of the insulated circuit board 4 having an outer shape of 20 mm ⁇ 20 mm with solder. Then, the electrode terminal 6 is soldered to a predetermined position of the insulating circuit board 4 and the Si semiconductor element.
  • the copper pattern is formed is a conductive layer 2 and 3 of 16 mm ⁇ 16 mm in thickness 0.7mm size on both surfaces of the ceramic plate 1 of a thickness of 0.32 mm Si 3 N 4 ing.
  • the size of the conductor layers 2 and 3 is smaller than the size of the ceramic plate 1, and the conductor layers 2 and 3 do not protrude from the ceramic plate 1.
  • the lower mold 12 used for transfer mold sealing is fitted with the flat portion 31 and part of the side portion 32 of the conductor layer 3 on the lower surface side of the insulating circuit board 4 having a size of 16 mm ⁇ 16 mm and a depth of 0.5 mm.
  • a lower mold cavity 13 is formed. For this reason, the entire surface of the ceramic plate 1 of the insulating circuit board 4 is sealed with the mold resin 7, and the plane of the lower planar portion 31 and the side portion 32 formed on the lower surface of the conductor layer 3 formed on the ceramic plate 1.
  • a height of 0.5 mm is exposed from the surface of the portion 31 toward the ceramic plate 1 and is sealed with a mold resin 7 (from the ceramic plate 1 of the side surface portion 32 of the conductor layer 3 to a position of 0.2 mm downward) Was sealed with mold resin 7).
  • a film-like solder having a size of 16 mm ⁇ 16 mm and a thickness of 0.3 mm is used as the bonding material 8. Then, the conductor layer 3 on the lower surface side of the insulating circuit board 4 and the film-like solder were fixed to a predetermined position of the cooler 9 with a jig, and joined by heating in a reflow furnace.
  • the solder is inserted into the lower mold cavity 13 of the lower mold 12 of the conductor layer 3 on the lower surface side of the insulated circuit board 4. It joins with the part (a part of plane part 31 and side part 32) exposed from mold resin 7 which had been.
  • the cooler 9 is made of aluminum, and has a size of 60 mm ⁇ 60 mm and a thickness of 15 mm, and is capable of joining six insulated circuit boards 4 having a size of 20 mm ⁇ 20 mm.
  • the solder thickness between the conductor layer 3 on the lower surface side of the insulated circuit board 4 and the cooler 9 is 0.25 mm. It is adjusted. Therefore, the solder protrudes from the exposed flat surface portion 31 of the conductor layer 3 on the lower surface side of the insulated circuit board 4 and is formed along the 0.5 mm exposed portion of the side surface portion 32 of the lower surface side conductor layer 3.
  • the solder shape formed on the side surface portion 32 of the conductor layer 3 is a taper shape from the ceramic plate 1 side toward the cooler 9, and a skirt (fillet) extending toward the outer peripheral portion of the cooler 9 on the upper surface of the cooler 9. Shape. That is, the solder shape of the joint portion between the side surface portion 32 of the conductor layer 3 and the cooler 9 is a shape in which the width on the cooler 9 side is wider than the width on the insulating substrate 1 side in a sectional view.
  • the solder thickness between the conductor layer 3 on the lower surface side of the insulated circuit board 4 and the cooler 9 is adjusted by forming a 0.25 mm bonding wire spacer on the surface (upper surface) of the cooler 9 with a wire bonder.
  • the thickness was controlled to be 0.25 mm.
  • FIG. 12 is a schematic cross-sectional structure diagram showing the end portion of the insulating substrate of the power module according to Embodiment 1 of the present invention.
  • the thickness of the conductor layer 3 on the lower surface side of the insulated circuit board 4 is t (mm)
  • the exposed length of the conductor layer 3 was L (mm).
  • Table 1 shows the specifications of the prototype power module, the temperature cycle test peeling determination result, and the insulation test determination result.
  • Evaluation sample examples 1 to 18 differ only in the thickness (t) of the conductor layer 3 on the lower surface side of the insulated circuit board 4 and the exposed length (L) from the mold resin 7 on the side surface portion 32 of the conductor layer 3.
  • a power module was prototyped by the same method as described above.
  • the exposed length of the side surface portion 32 of the conductor layer 3 from the mold resin 7 is determined by the depth of the lower mold cavity 13.
  • Table 1 shows the evaluation results as “OK” when no peeling was observed after the temperature cycle, and “NG” when peeling was observed.
  • FIG. 13 is a relationship diagram between the conductor layer thickness and the conductor layer side surface exposed length of the power module according to Embodiment 1 of the present invention.
  • Table 1 shows the conditions for which the determination was “OK” in both the peel determination and the insulation test determination after the temperature cycle test.
  • “black circles” in the graph indicate the exposed length L of the side surface portion 32 of the conductor layer 3 that becomes a pass determination in the temperature cycle test determination at each thickness t of the conductor layer 3.
  • the region of the exposure length L below the “black circle” is a region that fails the temperature cycle test determination, and the region of the exposure length L above the “black circle” passes the temperature cycle test determination. It is an area. It has been found that the exposed length L of the side surface portion 32 of the conductor layer 3 that is determined to pass in the temperature cycle test has a correlation with the thickness t of the conductor layer 3 and is shown below.
  • the exposed length L of the side surface portion 32 of the conductor layer 3 is the taper (fillet) height of the solder.
  • the exposed length L of the side surface portion 32 of the conductor layer 3 has an appropriate region with respect to the thickness t of the conductor layer 3.
  • Black squares in the graph of FIG. 13 indicate the exposed length L of the side surface portion 32 of the conductor layer 3 that is determined to pass in the insulation test at each thickness t of the conductor layer 3.
  • the region of the exposure length L below the “black square” is a region that passes the insulation test determination, and the region of the exposure length L above the “black square” is a region that fails the insulation test determination. It is. It has been found that the exposed length L of the side surface portion 32 of the conductor layer, which is determined to pass in the insulation test, has a correlation with the conductor layer thickness t and is shown below.
  • the dielectric breakdown path of the power module 100 is based on the ceramic plate 1 and the mold resin 7 starting from the end of the conductor layer 2 on the upper surface side of the insulated circuit board 4 on which the semiconductor element 5 having the maximum electric field strength is mounted. From the interface to the cooler 9.
  • the withstand voltage is greatly improved as compared with the case where the insulating circuit board 4 is not sealed with the mold resin 7.
  • the insulating properties are deteriorated because it approaches a state where the mold resin 7 is not sealed.
  • the difference between the thickness t of the conductor layer 3 and the exposed length L of the side surface portion 32 of the conductor layer 3 is adhered to the lower surface side of the ceramic plate 1 of the insulating circuit substrate 4 (the lower surface side is sealed). ) The thickness of the mold resin 7 is obtained.
  • the gap between the ceramic plate 1 and the mold is narrow at the time of molding the mold resin 7 and sufficient injection (intrusion) of the mold resin 7 is performed. Peeling and voids are generated between the ceramic plate 1 and the mold resin 7.
  • the resin thickness of the mold resin 7 adhered to the lower surface side of the ceramic plate 1 of the insulating circuit board 4 has a lower limit value, and the thickness is required to be 0.2 mm or more.
  • the exposed length L of the side surface portion 32 of the conductor layer 3 has an appropriate value. It was found that the formula (3) needs to be satisfied. Moreover, when the thickness of the conductor layer 3 was 0.4 mm, there was no area
  • the thickness of the conductor layer 3 increases, the area where both the bonding reliability between the insulating circuit board 4 and the cooler 9 and the insulation reliability of the power module 100 can be secured increases.
  • the upper limit of the thickness of the conductor layer 3 is also restricted due to restrictions in manufacturing the insulated circuit board 4 and restrictions on the temperature cycle test resistance of the insulated circuit board 4 itself.
  • the etching time is increased in proportion to the thickness of the conductor layer 3 and the manufacturing cost is increased.
  • the conductor layer 3 is thickened, thermal stress increases at the interface between the ceramic plate 1 and the conductor layer 3, and cracking of the ceramic plate 1 occurs even in a temperature cycle test with the insulated circuit board 4 alone. For this reason, the upper limit of the thickness of the conductor layer 3 is 1.0 mm.
  • FIG. 14 is a schematic cross-sectional view showing another power module according to Embodiment 1 of the present invention.
  • the power module 200 includes an insulated circuit board 4 sealed with two mold resins 7 on a cooler 9. In this way, by adjusting the size of the cooler 9, it is possible to arrange the insulated circuit board 4 sealed with a plurality of mold resins 7.
  • a part of the side surface portion 32 of the conductor layer 3 on the lower surface side of the insulating circuit substrate 4 sealed with the mold resin 7 is sealed with the mold resin 7. Since the planar portion 31 and part of the side surface portion 32 of the conductor layer 3 exposed from above and the cooler 9 are joined by the joining material 8, the occurrence of peeling at the metal joining portion can be suppressed. As a result, it becomes possible to improve the reliability of the power module.
  • the shape of the joined portion obtained by joining a part of the side surface portion 32 of the conductor layer 3 exposed from the mold resin 7 and the cooler 9 with the joining material 8 is a taper (fillet) shape, the heat at the metal joined portion The generation of stress can be suppressed, and the reliability of the power module can be improved.
  • the solder resist 10 is formed on the upper surface of the cooler 9 when the conductor layer 3 on the lower surface side of the insulated circuit board 4 used in the first embodiment and the cooler 9 are joined.
  • the solder resist 10 is formed on the upper surface of the cooler 9, the flow region of the bonding material 8 at the time of bonding between the conductor layer 3 and the cooler 9 can be restricted, and the side surface of the conductor layer 3 is surely The exposed region of the portion 32 can be covered with the bonding material 8. As a result, it becomes possible to improve the reliability of the power module. Since other points are the same as those in the first embodiment, detailed description thereof is omitted.
  • FIG. 15 is a schematic plan view showing the power module according to Embodiment 2 of the present invention.
  • FIG. 16 is a schematic cross-sectional structure diagram showing a power module according to Embodiment 2 of the present invention.
  • FIG. 16 is a schematic diagram of a cross-sectional structure taken along one-dot chain line BB in FIG.
  • a power module 300 includes an insulating circuit board 4, a semiconductor element 5, an electrode terminal 6, a molding resin 7 as a sealing resin, a bonding material 8, a cooler 9, and a solder resist 10. Except that the solder resist 10 is formed, it is the same as the first embodiment.
  • the solder resist 10 is formed on a surface where the conductor layer 3 on the lower surface side of the insulating circuit board 4 which is the upper surface of the cooler 9 is bonded by the bonding material 8.
  • the solder resist 10 is provided in a region surrounding the outer periphery of the bonding material 8 on the upper surface of the cooler 9. At this time, the solder resist 10 is formed with a predetermined distance from the bonding material 8. Therefore, the solder resist 10 has an opening 101 in the central region so that the bonding material 8 can be arranged at a predetermined interval.
  • the purpose of the solder resist 10 is arranged to limit the region where the bonding material 8 spreads on the upper surface of the cooler 9. That is, the solder resist 10 is disposed at a position where the bonding material 8 formed on the side surface portion 32 of the conductor layer 3 can be accurately tapered.
  • solder resist 10 As the solder resist 10, a general commercial product can be applied as long as adhesion to the cooler 9 and heat resistance can be secured.
  • FIG. 17 is a schematic cross-sectional structure diagram showing the manufacturing process of the power module in the second embodiment of the present invention.
  • FIG. 18 is a schematic cross-sectional structure diagram showing the manufacturing process of the power module in the second embodiment of the present invention.
  • FIG. 19 is a schematic cross-sectional structure diagram showing the manufacturing process of the power module according to Embodiment 2 of the present invention.
  • FIG. 17 is performed after the manufacturing process of FIG. 9, and FIGS. 18 and 19 are replaced with the manufacturing process shown in FIGS.
  • the power module 300 using 10 can be manufactured.
  • solder resist 10 is formed on the outer peripheral portion of the upper surface of the cooler 9 as shown in FIG. 17. (Solder resist forming step). At this time, the solder resist 10 is formed with the opening 101 in the central region of the upper surface of the cooler 9.
  • the bonding material 8 is disposed in the opening 101 surrounded by the solder resist 10. Then, the insulating circuit board 4 encapsulated with the mold resin 7 is bonded to a predetermined position in the central region of the upper surface of the cooler 9 whose outer periphery is covered with the solder resist 10 via the bonding material 8. It is fixed using (cooler arrangement process).
  • the bonding material 8 is reflowed using a reflow furnace as shown in FIG. 19 instead of FIG. As a result, the bonding material 8 is melted, and the flat portion 31 and the portion (exposed portion) of the side surface portion 32 of the conductor layer 3 on the lower surface side of the insulating circuit substrate 4 exposed from the mold resin 7 are bonded to the cooler 9. (Cooler joining process).
  • the bonding material 8 has the solder resist 10 disposed on the outer peripheral portion of the upper surface of the cooler 9, so that the range (region) that is expanded during reflow is limited. That is, it expands inside the opening 101 of the solder resist 10. Due to the solder resist 10, the bonding material 8 is restricted in diffusion and gathers at the peripheral corners of the conductor layer 3, so that the exposed portion of the side surface portion 32 of the conductor layer 3 can be reliably covered.
  • the bonding material 8 is sufficiently supplied also at the corners of the conductor layer 3. Therefore, it becomes easy to form the taper (fillet) shape of the bonding material 8 also in this corner portion.
  • FIG. 20 is a schematic plan view showing the solder resist shape of the power module according to Embodiment 2 of the present invention.
  • FIG. 21 is a schematic cross-sectional structure diagram showing a corner portion of the power module according to Embodiment 2 of the present invention.
  • the conductor layer 3 is indicated by a dotted line.
  • the solder resist 10 has a dimension of 21 mm on the inner side and an opening in the central region.
  • the distance between the side portion of the conductor layer 3 and the side portion of the solder resist 10 is 2.5 mm.
  • a film-like solder having a size of 16 mm ⁇ 16 mm and a thickness of 0.3 mm is used as the bonding material 8 as in the first embodiment. It was implemented by fixing the conductor layer 3 on the lower surface side of the insulating circuit board 4 and the film-like solder to a predetermined position of the cooler 9 with a jig and heating.
  • the solder thickness between the conductor layer 3 on the lower surface side of the insulated circuit board 4 and the cooler 9 is adjusted to be 0.25 mm. Therefore, the solder protrudes from the exposed flat portion 31 of the conductor layer 3 on the lower surface side of the insulated circuit board 4, and a taper of the solder is formed along the exposed portion of the side surface portion 32 of the conductor layer 3 by 0.5 mm. It was.
  • FIG. 21 the result of having observed the taper shape of the corner
  • a portion of the conductor layer 3 covered with the mold resin 7 or the bonding material 8 is indicated by a dotted line.
  • the solder resist 10 When the solder resist 10 is not formed, the spread of the solder cannot be regulated, so that the amount of solder supplied to the corner of the conductor layer 3 is small and the taper height at the corner tends to be low. However, since the solder resist 10 is formed, the solder resist 10 acts as a dam with respect to the solder, and the solder spreads in a substantially square shape. As a result, since the solder also wraps around the exposed corners of the conductor layer 3, it is possible to ensure a taper height. And the reliability of the power module 300 improves.
  • FIG. 22 is a schematic plan view showing another solder resist shape of the power module according to Embodiment 2 of the present invention.
  • FIG. 23 is a schematic plan view showing another solder resist shape of the power module according to Embodiment 2 of the present invention.
  • FIG. 24 is a schematic cross-sectional structure diagram showing another corner portion of the power module according to Embodiment 2 of the present invention.
  • the conductor layer 3 is indicated by a dotted line.
  • the solder resist 10 has an inner side dimension of 18 mm and an opening in the central region.
  • a projecting portion pointed from the inside to the outside in which the opening from the inside toward the outside widens.
  • the distance between the side portion of the conductor layer 3 and the side portion of the solder resist 10 is 1.0 mm.
  • the shape of the protruding portion of the solder resist 10 is not limited to a shape with a sharp tip as shown in FIG. 22, but may have a round shape (a shape with a curvature) as shown in FIG. .
  • the solder is formed in the shape of the opening of the solder resist 10. For this reason, by making the tip of the protruding portion of the opening of the solder resist 10 round, it is possible to relieve the thermal stress acting on the solder during the temperature cycle test, and the reliability of the power module 300 is improved.
  • the conductor layer 3 on the lower surface side of the insulating circuit board 4 and the cooler 9 are joined using film-like solder having a size of 16 mm ⁇ 16 mm and a thickness of 0.3 mm.
  • the conductor layer 3 on the lower surface side of the insulating circuit board 4 and the film-like solder were fixed with a jig at a predetermined position of the cooler 9 and heated.
  • the solder thickness between the conductor layer 3 on the lower surface side of the insulated circuit board 4 and the cooler 9 is adjusted to be 0.25 mm. Therefore, the solder protrudes outward from the exposed flat portion 31 of the conductor layer 3 on the lower surface side of the insulated circuit board 4, and forms a taper of the solder along the exposed portion of the side surface portion 32 of the conductor layer 3 by 0.5 mm. It became.
  • FIG. 24 shows the result of observing the tapered shape of the corner (corner portion) of the exposed conductor layer 3 after joining the conductor layer 3 on the lower surface side of the insulated circuit board 4 and the cooler 9.
  • a portion of the conductor layer 3 covered with the mold resin 7 or the bonding material 8 is indicated by a dotted line.
  • the solder also wraps around the exposed corner of the conductor layer 3. Further, as shown in FIG. 22 and FIG. 23, in the vicinity of the inner corner of the solder resist 10, since the protrusion is provided, the solder further wraps around the protrusion, and the uniform height. Can be formed. That is, the height of the solder in the side surface portion 32 of the conductor layer 3 is formed high (closer to the lower surface side of the insulating substrate 1 on which the conductor layer 3 is formed). Therefore, since the taper height of the conductor layer corner portion where the thermal stress is maximized during the temperature cycle test is secured, it is possible to prevent the peeling of the solder due to the stress relaxation effect of the taper, and the reliability of the power module 300 is improved.
  • the opening shape of the solder resist 10 be a shape approximately 1.0 mm larger than the outer shape of the conductor layer 3.
  • FIG. 25 is a schematic plan view showing another power module according to Embodiment 2 of the present invention.
  • a power module 400 includes an insulated circuit board 4 sealed with two mold resins 7 on a cooler 9.
  • a solder resist 10 is formed on the outer periphery of the conductor layer 3 on the lower surface side of each insulating circuit board 4. In this way, by adjusting the size of the cooler 9, it is possible to arrange the insulated circuit board 4 sealed with a plurality of mold resins 7.
  • a part of the side surface portion 32 of the conductor layer 3 on the lower surface side of the insulating circuit board 4 sealed with the mold resin 7 is also sealed with the mold resin 7. Since the planar portion 31, the side surface portion 32, and the cooler 9 of the conductor layer 3 exposed from the above are joined by the joining material 8, it is possible to suppress the occurrence of peeling at the metal joining portion. As a result, it becomes possible to improve the reliability of the power module.
  • the shape of the joint portion obtained by joining the flat portion 31, the side surface portion 32, and the cooler 9 of the conductor layer 3 exposed from the mold resin 7 with the joining material 8 is a tapered shape, the thermal stress at the metal joint portion is reduced. Generation
  • production can be suppressed and it becomes possible to improve the reliability of a power module.
  • solder resist 10 it is possible to form a tapered shape also at the corners of the conductor layer 3, to suppress the generation of thermal stress at the metal joint, and to improve the reliability of the power module. It becomes possible.
  • the shape of the solder resist 10 formed on the upper surface of the cooler 9 is a shape provided with a protruding portion in which the corner portion of the solder resist 10 protrudes from the inner side to the outer side, A taper shape with a uniform height can be formed, generation of thermal stress at the metal joint can be suppressed, and the reliability of the power module can be improved.
  • Embodiment 3 FIG.
  • the third embodiment is different in that the electrode terminal 6 used in the first and second embodiments is protruded from the upper surface side of the power module to the outside of the mold resin 7.
  • the electrode terminal 6 since the electrode terminal 6 is protruded from the upper surface side of the mold resin 7, the power module can be downsized while the reliability of the conductor layer 3 on the lower surface side of the insulating circuit board 4 and the cooler 9 is ensured. It becomes possible. Since other points are the same as those in the first embodiment or the second embodiment, detailed description thereof is omitted.
  • FIG. 26 is a schematic plan view showing a power module according to Embodiment 3 of the present invention.
  • FIG. 27 is a schematic cross-sectional structure diagram showing a power module according to Embodiment 3 of the present invention.
  • FIG. 27 is a schematic cross-sectional view taken along the alternate long and short dash line CC in FIG.
  • a power module 500 includes an insulating circuit board 4, a semiconductor element 5, an electrode terminal 6, a mold resin 7, a bonding material 8, a cooler 9, and a solder resist 10.
  • the structure is the same as that of the second embodiment except that the electrode terminal 6 has a protruding structure protruding from the upper surface side of the mold resin 7 to the outside.
  • the mold resin sealing with the electrode terminal 6 protruding upward is performed by, for example, forming a cavity for storing the electrode terminal 6 in the upper mold, and inserting the electrode terminal 6 therein. And do it.
  • the electrode terminal 6 is processed into a predetermined shape.
  • the power module 500 can be manufactured in the same manner as in the second embodiment. Further, as in the first embodiment, a power module structure that does not use the solder resist 10 can be realized. With such a structure, the power module can be reduced in size while ensuring the reliability of the conductor layer 3 on the lower surface side of the insulated circuit board 4, the cooler 9, and the joint.
  • a part of the side surface portion 32 of the conductor layer 3 on the lower surface side of the insulating circuit board 4 sealed with the mold resin 7 is also sealed with the mold resin 7. Since the planar portion 31, the side surface portion 32, and the cooler 9 of the conductor layer 3 exposed from the above are joined by the joining material 8, it is possible to suppress the occurrence of peeling at the metal joining portion. As a result, it becomes possible to improve the reliability of the power module.
  • the shape of the joint portion obtained by joining the flat portion 31, the side surface portion 32, and the cooler 9 of the conductor layer 3 exposed from the mold resin 7 with the joining material 8 is a tapered shape, the thermal stress at the metal joint portion is reduced. Generation
  • production can be suppressed and it becomes possible to improve the reliability of a power module.
  • solder resist 10 it is possible to form a tapered shape also at the corners of the conductor layer 3, to suppress the generation of thermal stress at the metal joint, and to improve the reliability of the power module. It becomes possible.
  • the shape of the solder resist 10 formed on the upper surface of the cooler 9 is a shape in which the corner portion of the solder resist 10 protrudes to the outer peripheral side, a tapered shape having a uniform height at the corner portion of the conductor layer 3 is also formed. It can be formed, the generation of thermal stress at the metal joint can be suppressed, and the reliability of the power module can be improved.
  • the electrode terminal 6 is protruded from the upper surface side of the mold resin 7 to the outside of the mold resin 7, the power of the conductor layer 3 on the lower surface side of the insulated circuit board 4, the cooler 9, and the joint is ensured.
  • the module can be miniaturized.
  • Embodiment 4 the power module according to the first to third embodiments described above is applied to a power converter.
  • the present invention is not limited to a specific power converter, hereinafter, a case where the present invention is applied to a three-phase inverter will be described as a fourth embodiment.
  • FIG. 28 is a block diagram showing a configuration of a power conversion system to which the power conversion device according to Embodiment 4 of the present invention is applied.
  • the power supply 1000 is a DC power supply and supplies DC power to the power converter 2000.
  • the power supply 1000 can be composed of various types.
  • the power source 1000 can be composed of a direct current system, a solar battery, or a storage battery, and can be composed of a rectifier circuit or an AC / DC converter connected to the alternating current system. Also good.
  • the power supply 1000 may be configured by a DC / DC converter that converts DC power output from the DC system into predetermined power.
  • the power conversion device 2000 is a three-phase inverter connected between the power supply 1000 and the load 3000, converts DC power supplied from the power supply 1000 into AC power, and supplies AC power to the load 3000. As shown in FIG. 13, the power conversion device 2000 converts a DC power input from the power supply 1000 into an AC power and outputs a main conversion circuit 2001, and a control signal for controlling the main conversion circuit 2001. And a control circuit 2003 for outputting to the computer.
  • the load 3000 is a three-phase motor driven by AC power supplied from the power converter 2000.
  • the load 3000 is not limited to a specific application, and is an electric motor mounted on various electric devices.
  • the load 3000 is used as an electric motor for a hybrid vehicle, an electric vehicle, a railway vehicle, an elevator, or an air conditioner.
  • the main conversion circuit 2001 includes a switching element and a free wheel diode (not shown) built in the power module 2002, and converts the DC power supplied from the power supply 1000 into AC power by switching the switching element.
  • the load 3000 is supplied.
  • the main conversion circuit 2001 according to the present embodiment is a two-level three-phase full bridge circuit, and includes six switching elements and respective switching elements. It can be composed of six anti-parallel diodes.
  • the main conversion circuit 2001 is configured by a power module 2002 corresponding to any one of the above-described first to third embodiments, in which each switching element and each free-wheeling diode are incorporated.
  • the six switching elements are connected in series for each of the two switching elements to constitute upper and lower arms, and each upper and lower arm constitutes each phase (U phase, V phase, W phase) of the full bridge circuit.
  • the output terminals of the upper and lower arms that is, the three output terminals of the main conversion circuit 2001 are connected to the load 3000.
  • the main conversion circuit 2001 includes a drive circuit (not shown) for driving each switching element.
  • the drive circuit may be built in the power module 2002 or a drive circuit may be provided separately from the power module 2002. The structure provided may be sufficient.
  • the drive circuit generates a drive signal for driving the switching element of the main conversion circuit 2001 and supplies it to the control electrode of the switching element of the main conversion circuit 2001. Specifically, in accordance with a control signal from a control circuit 2003 described later, a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrode of each switching element.
  • the drive signal When the switching element is maintained in the ON state, the drive signal is a voltage signal (ON signal) that is equal to or higher than the threshold voltage of the switching element, and when the switching element is maintained in the OFF state, the drive signal is a voltage that is equal to or lower than the threshold voltage of the switching element.
  • Signal (off signal) When the switching element is maintained in the ON state, the drive signal is a voltage signal (ON signal) that is equal to or higher than the threshold voltage of the switching element, and when the switching element is maintained in the OFF state, the drive signal is a voltage that is equal to or lower than the threshold voltage of the switching element.
  • Signal (off signal) When the switching element is maintained in the ON state, the drive signal is a voltage signal (ON signal) that is equal to or higher than the threshold voltage of the switching element, and when the switching element is maintained in the OFF state, the drive signal is a voltage that is equal to or lower than the threshold voltage of the switching element.
  • Signal (off signal) When the switching element is maintained in the ON state,
  • the control circuit 2003 controls the switching element of the main conversion circuit 2001 so that desired power is supplied to the load 3000. Specifically, based on the power to be supplied to the load 3000, the time (ON time) during which each switching element of the main converter circuit 2001 is to be turned on is calculated. For example, the main conversion circuit 2001 can be controlled by PWM control that modulates the ON time of the switching element according to the voltage to be output. Then, a control command (control signal) is supplied to the drive circuit included in the main conversion circuit 2001 so that an ON signal is output to the switching element that should be turned on at each time point and an OFF signal is output to the switching element that should be turned off. Is output. In accordance with this control signal, the drive circuit outputs an ON signal or an OFF signal as a drive signal to the control electrode of each switching element.
  • the power module according to the first to third embodiments is applied as the power module 2002 of the main conversion circuit 2001, thereby improving reliability. be able to.
  • the present invention is not limited to this, and can be applied to various power conversion devices.
  • a two-level power converter is used.
  • a three-level or multi-level power converter may be used.
  • the present invention is applied to a single-phase inverter. You may apply.
  • the present invention can be applied to a DC / DC converter or an AC / DC converter.
  • the power conversion device to which the present invention is applied is not limited to the case where the load described above is an electric motor.
  • the power source of an electric discharge machine, a laser processing machine, an induction heating cooker, or a non-contact power supply system It can also be used as a device, and can also be used as a power conditioner for a photovoltaic power generation system, a power storage system, or the like.
  • the invention may be formed by appropriately combining a plurality of constituent elements disclosed in the above embodiment.

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

La présente invention concerne un module de puissance qui présente une fiabilité améliorée par rapport à une partie de liaison métallique entre un dispositif de refroidissement et une carte de circuit isolée qui est scellée avec une résine de moule. Un module de puissance qui est caractérisé en ce qu'il comprend : un substrat isolant (1) qui comprend des couches conductrices (2, 3) sur la surface supérieure et la surface inférieure, tout en ayant un élément semi-conducteur (5) monté sur la couche conductrice (2) sur la surface supérieure, et la couche conductrice (3) sur la surface inférieure ayant une partie de surface plate (31) sur le côté inférieur et une partie de surface latérale (32) sur le côté latéral; une résine d'étanchéité (7) qui scelle le substrat isolant (1) de telle sorte que la partie de surface plate (31) et une partie de la partie de surface latérale (32) sont exposées à partir de celle-ci; un matériau de liaison (8) qui est lié à la partie de surface plate (31) et la partie de la partie de surface latérale (32) exposée à partir de la résine d'étanchéité (7); et un dispositif de refroidissement (9) qui est lié au substrat isolant (1), avec le matériau de liaison (89) étant interposé entre eux.
PCT/JP2017/029727 2016-09-29 2017-08-21 Module de puissance, son procédé de production et convertisseur de puissance électrique Ceased WO2018061517A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-191502 2016-09-29
JP2016191502A JP2019207897A (ja) 2016-09-29 2016-09-29 パワーモジュール、その製造方法および電力変換装置

Publications (1)

Publication Number Publication Date
WO2018061517A1 true WO2018061517A1 (fr) 2018-04-05

Family

ID=61760509

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/029727 Ceased WO2018061517A1 (fr) 2016-09-29 2017-08-21 Module de puissance, son procédé de production et convertisseur de puissance électrique

Country Status (2)

Country Link
JP (1) JP2019207897A (fr)
WO (1) WO2018061517A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6644196B1 (ja) * 2019-02-01 2020-02-12 三菱電機株式会社 半導体装置およびその製造方法ならびに電力変換装置
JP6698965B1 (ja) * 2019-06-06 2020-05-27 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法
JP2020098821A (ja) * 2018-12-17 2020-06-25 富士電機株式会社 半導体装置及び半導体装置の製造方法
JPWO2021220357A1 (fr) * 2020-04-27 2021-11-04
WO2022137701A1 (fr) * 2020-12-22 2022-06-30 日立Astemo株式会社 Élément de circuit électrique et appareil de conversion de puissance

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7672204B2 (ja) * 2020-07-15 2025-05-07 Ｄｏｗａメタルテック株式会社 絶縁基板およびその製造方法
WO2023073752A1 (fr) * 2021-10-25 2023-05-04 三菱電機株式会社 Dispositif semi-conducteur, dispositif de conversion de puissance, et procédé destiné à fabriquer un dispositif semi-conducteur
CN120266271A (zh) * 2022-11-29 2025-07-04 罗姆股份有限公司 半导体模块
JP2025002137A (ja) * 2023-06-21 2025-01-09 日立Astemo株式会社 半導体モジュール、電気回路体、および電力変換装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008227336A (ja) * 2007-03-15 2008-09-25 Hitachi Metals Ltd 半導体モジュール、これに用いられる回路基板
JP2012129336A (ja) * 2010-12-15 2012-07-05 Fuji Electric Co Ltd 半導体装置およびその製造方法
JP2013225556A (ja) * 2012-04-20 2013-10-31 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2014146645A (ja) * 2013-01-28 2014-08-14 Mitsubishi Electric Corp 半導体装置
WO2016031462A1 (fr) * 2014-08-28 2016-03-03 富士電機株式会社 Module de puissance à semi-conducteurs
JP2016092233A (ja) * 2014-11-05 2016-05-23 富士電機株式会社 半導体装置
WO2016158020A1 (fr) * 2015-04-01 2016-10-06 富士電機株式会社 Module à semi-conducteur

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008227336A (ja) * 2007-03-15 2008-09-25 Hitachi Metals Ltd 半導体モジュール、これに用いられる回路基板
JP2012129336A (ja) * 2010-12-15 2012-07-05 Fuji Electric Co Ltd 半導体装置およびその製造方法
JP2013225556A (ja) * 2012-04-20 2013-10-31 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2014146645A (ja) * 2013-01-28 2014-08-14 Mitsubishi Electric Corp 半導体装置
WO2016031462A1 (fr) * 2014-08-28 2016-03-03 富士電機株式会社 Module de puissance à semi-conducteurs
JP2016092233A (ja) * 2014-11-05 2016-05-23 富士電機株式会社 半導体装置
WO2016158020A1 (fr) * 2015-04-01 2016-10-06 富士電機株式会社 Module à semi-conducteur

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020098821A (ja) * 2018-12-17 2020-06-25 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP7188049B2 (ja) 2018-12-17 2022-12-13 富士電機株式会社 半導体装置
JP6644196B1 (ja) * 2019-02-01 2020-02-12 三菱電機株式会社 半導体装置およびその製造方法ならびに電力変換装置
WO2020157965A1 (fr) * 2019-02-01 2020-08-06 三菱電機株式会社 Dispositif à semi-conducteur et son procédé de fabrication, et dispositif de conversion de puissance
US12308304B2 (en) 2019-02-01 2025-05-20 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing the same, and power conversion device
JP6698965B1 (ja) * 2019-06-06 2020-05-27 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法
WO2020245998A1 (fr) * 2019-06-06 2020-12-10 三菱電機株式会社 Dispositif à semi-conducteur, dispositif de conversion de puissance et procédé de fabrication de dispositif à semi-conducteur
JPWO2021220357A1 (fr) * 2020-04-27 2021-11-04
CN115428142A (zh) * 2020-04-27 2022-12-02 三菱电机株式会社 半导体装置
WO2022137701A1 (fr) * 2020-12-22 2022-06-30 日立Astemo株式会社 Élément de circuit électrique et appareil de conversion de puissance
JP2022098587A (ja) * 2020-12-22 2022-07-04 日立Astemo株式会社 電気回路体および電力変換装置
JP7555262B2 (ja) 2020-12-22 2024-09-24 日立Astemo株式会社 電気回路体および電力変換装置

Also Published As

Publication number Publication date
JP2019207897A (ja) 2019-12-05

Similar Documents

Publication Publication Date Title
WO2018061517A1 (fr) Module de puissance, son procédé de production et convertisseur de puissance électrique
US10559538B2 (en) Power module
CN104285294B (zh) 半导体装置及该半导体装置的制造方法
JP6399272B1 (ja) パワーモジュール及びその製造方法並びに電力変換装置
CN111033736B (zh) 功率模块及其制造方法及电力变换装置
JP6945418B2 (ja) 半導体装置および半導体装置の製造方法
JP7091878B2 (ja) パワーモジュール、電力変換装置、及びパワーモジュールの製造方法
CN112074954B (zh) 功率半导体模块及其制造方法以及电力变换装置
JP6644196B1 (ja) 半導体装置およびその製造方法ならびに電力変換装置
CN109727960A (zh) 半导体模块、其制造方法以及电力变换装置
JP6826665B2 (ja) 半導体装置、半導体装置の製造方法及び電力変換装置
JP2021141275A (ja) 電気回路体、電力変換装置、および電気回路体の製造方法
JP7561677B2 (ja) 電力半導体装置、電力半導体装置の製造方法及び電力変換装置
CN112106194B (zh) 用于半导体功率模块的排热组件
CN117438386A (zh) 半导体装置、半导体装置的制造方法及电力转换装置
CN113646876B (zh) 功率半导体模块以及电力变换装置
US20240030087A1 (en) Semiconductor device, method of manufacturing semiconductor device, and power conversion device
JP4096741B2 (ja) 半導体装置
CN114730748A (zh) 用于消耗装置的可控电功率供应的具有被封装的功率半导体的功率模块及用于生产该功率模块的方法
JP7487614B2 (ja) 半導体装置、半導体装置の製造方法及び電力変換装置
CN113261095A (zh) 半导体装置、半导体装置的制造方法及电力转换装置
JP2022098587A (ja) 電気回路体および電力変換装置
CN118120051A (zh) 半导体装置、电力变换装置及半导体装置的制造方法
JP2023173556A (ja) 半導体モジュールの製造方法、電力変換装置の製造方法、半導体モジュール、電力変換装置
JP2025024839A (ja) 半導体モジュール、電力用半導体装置、半導体モジュールの製造方法、電力用半導体装置の製造方法及び電力変換装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17855475

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17855475

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP