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WO2018056312A1 - Perovskite solar cell - Google Patents

Perovskite solar cell Download PDF

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Publication number
WO2018056312A1
WO2018056312A1 PCT/JP2017/033929 JP2017033929W WO2018056312A1 WO 2018056312 A1 WO2018056312 A1 WO 2018056312A1 JP 2017033929 W JP2017033929 W JP 2017033929W WO 2018056312 A1 WO2018056312 A1 WO 2018056312A1
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WIPO (PCT)
Prior art keywords
solar cell
layer
inorganic
sealing layer
perovskite solar
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Ceased
Application number
PCT/JP2017/033929
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French (fr)
Japanese (ja)
Inventor
智仁 宇野
明伸 早川
森田 健晴
元彦 浅野
哲也 会田
雄一郎 福本
麻由美 湯川
哲也 榑林
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Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
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Priority to JP2018540264A priority Critical patent/JP7074676B2/en
Publication of WO2018056312A1 publication Critical patent/WO2018056312A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Definitions

  • the present invention relates to a perovskite solar cell with high photoelectric conversion efficiency.
  • a photoelectric conversion element including a stacked body in which an N-type semiconductor layer and a P-type semiconductor layer are arranged between opposing electrodes.
  • photocarriers are generated by photoexcitation, and an electric field is generated by electrons moving through an N-type semiconductor and holes moving through a P-type semiconductor.
  • Fullerene In organic solar cells, fullerene is almost always used. Fullerenes are known to work mainly as N-type semiconductors.
  • Patent Document 1 describes a semiconductor heterojunction film formed using an organic compound that becomes a P-type semiconductor and fullerenes.
  • the cause of deterioration is fullerenes (see, for example, Non-Patent Document 1), and materials that replace fullerenes are required.
  • an organic inorganic perovskite compound having a perovskite structure using lead, tin, or the like as a central metal has been found as a photoelectric conversion material, and has been shown to have high photoelectric conversion efficiency (for example, Non-Patent Document 2).
  • the perovskite solar cell using a conventional organic / inorganic perovskite compound for the photoelectric conversion layer has a problem that it does not exhibit the photoelectric conversion efficiency as expected.
  • An object of this invention is to provide the perovskite solar cell with high photoelectric conversion efficiency.
  • the present invention provides a laminate having an electrode, a counter electrode, and a photoelectric conversion layer disposed between the electrode and the counter electrode, and sealing for covering the counter electrode and sealing the laminate.
  • the photoelectric conversion layer has a general formula R-MX 3 (where R is an organic molecule, M is a metal atom, and X is a halogen atom or a chalcogen atom).
  • the perovskite solar cell includes an organic / inorganic perovskite compound and has a refractive index difference of 0.4 or less between the sealing layer and the counter electrode. The present invention is described in detail below.
  • the present inventors examined the cause that the photoelectric conversion efficiency of the conventional perovskite solar cell does not increase as expected. As a result, it was found that the light that passed through the sealing layer was reflected at the interface with the upper transparent electrode. Since the photoelectric conversion layer containing the organic / inorganic perovskite compound has a property of being weak against moisture, the laminate of the electrode and the photoelectric conversion layer is sealed with a sealing layer mainly made of a resin or an inorganic material. However, the sealing layer has a lower refractive index than the upper transparent electrode, and the difference in refractive index between the sealing layer and the upper transparent electrode is large. And the photoelectric conversion efficiency was lowered.
  • the present inventors have further studied, and the refractive index of the sealing layer is increased by adding an inorganic filler in the sealing layer or selecting a resin constituting the sealing layer. It has been found that the difference in refractive index from the electrode can be reduced. As a result, it has been found that the photoelectric conversion efficiency of the perovskite solar cell can be improved by suppressing the reflection of light at the interface between the sealing layer and the upper transparent electrode, and the present invention has been completed.
  • the perovskite solar cell of this invention has a laminated body which has an electrode, a counter electrode, and the photoelectric converting layer arrange
  • the term “layer” means not only a layer having a clear boundary but also a layer having a concentration gradient in which contained elements gradually change.
  • the elemental analysis of the layer can be performed, for example, by performing FE-TEM / EDS line analysis measurement of the cross section of the solar cell and confirming the element distribution of the specific element.
  • a layer means not only a flat thin film-like layer but also a layer that can form a complicated and complicated structure together with other layers.
  • the material of the said electrode and the said counter electrode is not specifically limited, A conventionally well-known material can be used.
  • the counter electrode is a transparent electrode and is often patterned.
  • the electrode material include FTO (fluorine-doped tin oxide), gold, silver, titanium, sodium, sodium-potassium alloy, lithium, magnesium, aluminum, magnesium-silver mixture, magnesium-indium mixture, and aluminum-lithium alloy. , Al / Al 2 O 3 mixtures, Al / LiF mixtures, metals such as gold.
  • the material of the counter electrode CuI, ITO (indium tin oxide), SnO 2 , AZO (aluminum zinc oxide), IZO (indium zinc oxide), GZO (gallium zinc oxide), ATO (antimony-doped oxide)
  • conductive transparent materials such as tin
  • conductive transparent polymers These materials may be used alone or in combination of two or more.
  • the electrode and the counter electrode may be a cathode or an anode, respectively.
  • the refractive index of the counter electrode is not particularly limited, but is usually about 1.8 to 2.2.
  • the photoelectric conversion layer includes an organic / inorganic perovskite compound represented by the general formula R-MX 3 (where R is an organic molecule, M is a metal atom, and X is a halogen atom or a chalcogen atom).
  • R is an organic molecule
  • M is a metal atom
  • X is a halogen atom or a chalcogen atom.
  • the R is an organic molecule, and is preferably represented by C 1 N m H n (l, m, and n are all positive integers). Specifically, R is, for example, methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, dimethylamine, diethylamine, dipropylamine, dibutylamine, dipentylamine, dihexylamine, trimethylamine, triethylamine, tripropyl.
  • ions eg, methylammonium (CH 3 NH 3 )
  • methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine and their ions and phenethylammonium are preferred, and methylamine, ethylamine, propylamine and these ions are more preferred.
  • M is a metal atom, for example, lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, Europium etc. are mentioned. These metal atoms may be used independently and 2 or more types may be used together.
  • X is a halogen atom or a chalcogen atom, and examples thereof include chlorine, bromine, iodine, sulfur, and selenium. These halogen atoms or chalcogen atoms may be used alone or in combination of two or more. Among these, the halogen atom is preferable because the organic / inorganic perovskite compound becomes soluble in an organic solvent and can be applied to an inexpensive printing method by containing halogen in the structure. Furthermore, iodine is more preferable because the energy band gap of the organic-inorganic perovskite compound becomes narrow.
  • the organic / inorganic perovskite compound preferably has a cubic structure in which a metal atom M is disposed at the body center, an organic molecule R is disposed at each vertex, and a halogen atom or a chalcogen atom X is disposed at the face center.
  • FIG. 1 shows an example of a crystal structure of an organic / inorganic perovskite compound having a cubic structure in which a metal atom M is arranged at the body center, an organic molecule R is arranged at each vertex, and a halogen atom or a chalcogen atom X is arranged at the face center. It is a schematic diagram.
  • the organic / inorganic perovskite compound is preferably a crystalline semiconductor.
  • the crystalline semiconductor means a semiconductor capable of measuring the X-ray scattering intensity distribution and detecting a scattering peak.
  • the organic / inorganic perovskite compound is a crystalline semiconductor, the mobility of electrons in the organic / inorganic perovskite compound is increased, and the photoelectric conversion efficiency of the perovskite solar cell is improved.
  • the degree of crystallization can be evaluated as an index of crystallization.
  • the degree of crystallinity is determined by separating the crystalline-derived scattering peak detected by the X-ray scattering intensity distribution measurement and the halo derived from the amorphous part by fitting, obtaining the respective intensity integrals, Can be obtained by calculating the ratio.
  • a preferable lower limit of the crystallinity of the organic-inorganic perovskite compound is 30%. When the crystallinity is 30% or more, the mobility of electrons in the organic / inorganic perovskite compound is increased, and the photoelectric conversion efficiency of the perovskite solar cell is improved.
  • a more preferred lower limit of the crystallinity is 50%, and a more preferred lower limit is 70%. Examples of the method for increasing the crystallinity of the organic / inorganic perovskite compound include thermal annealing, irradiation with intense light such as laser, and plasma irradiation.
  • the photoelectric conversion layer contains the organic / inorganic perovskite compound
  • the photoelectric conversion layer further includes an organic semiconductor or an inorganic semiconductor in addition to the organic / inorganic perovskite compound as long as the effect of the present invention is not impaired. May be included.
  • the organic semiconductor or inorganic semiconductor referred to here may serve as an electron transport layer or a hole transport layer described later.
  • the organic semiconductor include compounds having a thiophene skeleton such as poly (3-alkylthiophene).
  • conductive polymers having a polyparaphenylene vinylene skeleton, a polyvinyl carbazole skeleton, a polyaniline skeleton, a polyacetylene skeleton, and the like can be given.
  • compounds having a porphyrin skeleton such as a phthalocyanine skeleton, a naphthalocyanine skeleton, a pentacene skeleton, or a benzoporphyrin skeleton, a spirobifluorene skeleton, etc.
  • carbon-containing materials such as carbon nanotubes, graphene, and fullerene that may be surface-modified Also mentioned.
  • the inorganic semiconductor examples include titanium oxide, zinc oxide, indium oxide, tin oxide, gallium oxide, tin sulfide, indium sulfide, zinc sulfide, CuSCN, Cu 2 O, CuI, MoO 3 , V 2 O 5 , WO 3 , MoS 2, MoSe 2, Cu 2 S , and the like.
  • the photoelectric conversion layer includes the organic-inorganic perovskite compound and the organic semiconductor or the inorganic semiconductor
  • the photoelectric conversion layer is a laminated body in which a thin-film organic semiconductor or an inorganic semiconductor portion and a thin-film organic-inorganic perovskite compound portion are stacked.
  • a composite film in which an organic semiconductor or inorganic semiconductor part and an organic / inorganic perovskite compound part are combined may be used.
  • a laminated body is preferable in that the production method is simple, and a composite film is preferable in that the charge separation efficiency in the organic semiconductor or the inorganic semiconductor can be improved.
  • the preferable lower limit of the thickness of the thin-film organic / inorganic perovskite compound site is 5 nm, and the preferable upper limit is 5000 nm. If the thickness is 5 nm or more, light can be sufficiently absorbed, and the photoelectric conversion efficiency is increased. If the said thickness is 5000 nm or less, since it can suppress that the area
  • the more preferable lower limit of the thickness is 10 nm, the more preferable upper limit is 1000 nm, the still more preferable lower limit is 20 nm, and the still more preferable upper limit is 500 nm.
  • a preferable lower limit of the thickness of the composite film is 30 nm, and a preferable upper limit is 3000 nm. If the thickness is 30 nm or more, light can be sufficiently absorbed, and the photoelectric conversion efficiency is increased. If the said thickness is 3000 nm or less, since it becomes easy to reach
  • the more preferable lower limit of the thickness is 40 nm, the more preferable upper limit is 2000 nm, the still more preferable lower limit is 50 nm, and the still more preferable upper limit is 1000 nm.
  • the electron carrying layer may be arrange
  • the material of the electron transport layer is not particularly limited.
  • Specific examples include cyano group-containing polyphenylene vinylene, boron-containing polymer, bathocuproine, bathophenanthrene, hydroxyquinolinato aluminum, oxadiazole compound, and benzimidazole compound.
  • naphthalene tetracarboxylic acid compound perylene derivative, phosphine oxide compound, phosphine sulfide compound, fluoro group-containing phthalocyanine, titanium oxide, zinc oxide, indium oxide, tin oxide, gallium oxide, tin sulfide, indium sulfide, zinc sulfide, etc. It is done.
  • the electron transport layer may consist of only a thin film electron transport layer, but preferably includes a porous electron transport layer.
  • the photoelectric conversion layer is a composite film in which an organic semiconductor or an inorganic semiconductor part and an organic / inorganic perovskite compound part are combined, a more complex composite film (a more complicated and complicated structure) is obtained.
  • the composite film is formed on the porous electron transport layer.
  • the preferable lower limit of the thickness of the electron transport layer is 1 nm, and the preferable upper limit is 2000 nm. If the thickness is 1 nm or more, holes can be sufficiently blocked. If the said thickness is 2000 nm or less, it will become difficult to become resistance at the time of electron transport, and photoelectric conversion efficiency will become high.
  • the more preferable lower limit of the thickness of the electron transport layer is 3 nm, the more preferable upper limit is 1000 nm, the still more preferable lower limit is 5 nm, and the still more preferable upper limit is 500 nm.
  • the hole transport layer may be arrange
  • the material for the hole transport layer is not particularly limited, and examples thereof include a P-type conductive polymer, a P-type low molecular organic semiconductor, a P-type metal oxide, a P-type metal sulfide, and a surfactant. Specific examples include polyethylene dioxythiophene polystyrene sulfonate adduct, carboxyl group-containing polythiophene, phthalocyanine, porphyrin and the like.
  • examples thereof include copper compounds, carbon nanotubes that may be surface-modified, and carbon-containing materials such as graphene.
  • the preferable lower limit of the thickness of the hole transport layer is 1 nm, and the preferable upper limit is 2000 nm. If the thickness is 1 nm or more, electrons can be sufficiently blocked. If the said thickness is 2000 nm or less, it will become difficult to become resistance at the time of hole transport, and a photoelectric conversion efficiency will become high.
  • the more preferable lower limit of the thickness is 3 nm, the more preferable upper limit is 1000 nm, the still more preferable lower limit is 5 nm, and the still more preferable upper limit is 500 nm.
  • the perovskite solar cell of the present invention may further have a substrate or the like.
  • substrate is not specifically limited, For example, transparent glass substrates, such as soda-lime glass and an alkali free glass, a ceramic substrate, a transparent plastic substrate, a metal substrate, etc. are mentioned. Among these, from the viewpoint of imparting flexibility to the perovskite solar cell, a transparent plastic substrate, a metal substrate, or the like is preferable.
  • the perovskite solar cell of the present invention has a sealing layer that covers the counter electrode and seals the stacked body.
  • the sealing layer seals the stacked body, moisture can be prevented from penetrating into the inside, and durability of the perovskite solar cell can be improved.
  • the term “sealing” of the sealing layer means that the sealing layer covers the entire object so as to close its end.
  • the refractive index difference between the sealing layer and the counter electrode is 0.4 or less. Since the difference in refractive index between the sealing layer and the counter electrode is 0.4 or less, incident light can be prevented from being reflected at the interface between the sealing layer and the counter electrode. Conversion efficiency can be improved.
  • the refractive index difference between the sealing layer and the counter electrode is preferably 0.3 or less.
  • the refractive index can be measured with a spectroscopic ellipsometer or an automatic thin film measuring device (for example, HORIBA Scientific, product name: UVISEL2, HORIBA Scientific, product name: Auto SE, etc.).
  • the refractive index difference between the sealing layer and the counter electrode can be increased by adding an inorganic filler in the sealing layer or selecting a resin constituting the sealing layer. It can be 0.4 or less.
  • the refractive index difference is set to 0. 0 by combining the method of selecting the material of the counter electrode. 4 or less.
  • the sealing layer preferably contains an inorganic filler.
  • an inorganic filler in the sealing layer, the difference in refractive index between the sealing layer and the counter electrode is reduced, so that the difference in refractive index between the sealing layer and the counter electrode is 0.4 or less. Can do.
  • the inorganic filler for example, TiO 2, ZrO, WO 3 , Nb 2 O 5, Ta 2 O 5, consisting of BaTiO 3, etc. particles.
  • the inorganic filler preferably has a refractive index of 2 to 3, and particles made of TiO 2 or ZrO are preferable because the difference in refractive index from the counter electrode can be reduced.
  • the inorganic filler is preferably surface-modified with a surface modifier.
  • a surface modifier By the surface modification of the inorganic filler, the dispersibility of the inorganic filler in the resin constituting the sealing layer can be improved, and a highly transparent sealing layer can be constructed. Thereby, the photoelectric conversion efficiency of a perovskite solar cell can be improved.
  • the surface modifier includes at least one element selected from the group consisting of P (phosphorus), Ti (titanium), Zr (zirconium), Al (aluminum), and Si (silicon), and a bond to these elements A surface modifier containing a modified organic group is preferred.
  • a surface modifier containing at least one element selected from the group consisting of P, Ti, Zr, and Si and an organic group bonded to these elements is more preferable.
  • the surface modifier contains Al
  • the organic / inorganic perovskite compound may be deteriorated by diffusion of Al into the photoelectric conversion layer, and the photoelectric conversion efficiency of the perovskite solar cell may be reduced.
  • Specific examples of the surface modifier include, for example, phosphate esters (including P), titanium coupling agents (including Ti), silane coupling agents (including Si), and zirconium coupling agents (including Zr). Etc. These surface modifiers may be used independently and 2 or more types may be used together.
  • the organic group in the said surface modifier is not specifically limited, It is preferable that it is group containing a linear hydrocarbon chain.
  • carbon number of the said organic group is not specifically limited, A preferable minimum is 8 and a preferable upper limit is 22. If the number of carbon atoms is 8 or more, the dispersibility of the inorganic filler in the resin constituting the sealing layer and the organic solvent used in forming the sealing layer is improved, and the transparency of the sealing layer is increased. . When the carbon number is 22 or less, the surface modifier is easily added to the surface of the particles. The more preferable lower limit of the carbon number is 14, and the more preferable upper limit is 20.
  • the average particle diameter of the inorganic filler is preferably 1 ⁇ m or less. By setting the average particle size of the inorganic filler to 1 ⁇ m or less, the inorganic filler can be dispersed without impairing the transparency of the sealing layer. A more preferable average particle size of the inorganic filler is 100 nm or less, and a more preferable average particle size is 50 nm or less.
  • the lower limit of the average particle diameter of the inorganic filler is not particularly limited, but is substantially about 1 nm.
  • the average particle diameter refers to the average primary particle diameter. The average particle diameter can be measured with a transmission electron microscope.
  • the minimum with preferable content of the said inorganic filler in the said sealing layer is 50 weight%, and a preferable upper limit is 95 weight%.
  • the refractive index of a sealing layer can be improved effectively because the said inorganic filler is 50 weight% or more.
  • the content of the inorganic filler is 95% by weight or less, the sealing layer can be prevented from significantly exceeding the refractive index of the counter electrode.
  • the minimum with more preferable content of the said inorganic filler in the said sealing layer is 70 weight%, and a more preferable upper limit is 90 weight%.
  • the sealing agent constituting the sealing layer is preferably a resin, and examples thereof include a thermoplastic resin, a thermosetting resin, and a photocurable resin.
  • the refractive index of these resins is not particularly limited, but is usually about 1.42 to 1.60.
  • the thermoplastic resin include butyl rubber, polyester, polyurethane, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polyvinyl alcohol, polyvinyl acetate, ABS resin, polybutadiene, polyamide, polycarbonate, polyimide, polyisobutylene, and cycloolefin resin. Can be mentioned.
  • thermosetting resin an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a melamine resin, a urea resin etc.
  • the photocurable resin include an epoxy resin, an acrylic resin, an allyl phthalate resin, a vinyl resin, and an ene-thiol resin.
  • acrylic resins are preferred from the viewpoints of transparency and barrier properties.
  • a resin having a relatively high polarity is preferable.
  • a resin having a relatively low polarity is preferable. If the resin has a relatively low polarity, it is possible to suppress the organic component in the organic / inorganic perovskite compound from eluting into the sealing layer at the time of sealing, and as a result, the organic / inorganic perovskite compound is deteriorated. Can be suppressed.
  • An acrylic resin is preferable because it can be adjusted to an appropriate polarity from the viewpoint of achieving both the dispersibility of the inorganic filler and the suppression of deterioration of the organic / inorganic perovskite compound.
  • Examples of the monomer constituting the acrylic resin include a monomer having a linear skeleton and a monomer having a cyclic skeleton.
  • a monomer having a cyclic skeleton is preferable, an alicyclic skeleton and a monomer having an aromatic hydrocarbon skeleton are more preferable, and the alicyclic skeleton contained in the repeating unit of the molecule.
  • a monomer having 6 to 12 carbon atoms in the aromatic hydrocarbon skeleton is more preferable.
  • Examples of the monomer having 6 to 12 carbon atoms of the aromatic hydrocarbon skeleton contained in the repeating unit of the molecule include benzyl (meth) acrylate, phenyl (meth) acrylate, and bisphenol A di (meth) acrylate. .
  • Examples of the monomer having 6 to 12 carbon atoms in the alicyclic skeleton contained in the repeating unit of the molecule include norbornyl (meth) acrylate, isobornyl (meth) acrylate, adamantyl (meth) acrylate, cyclohexyl (meth) acrylate, Examples include dicyclopentadienyl (meth) acrylate, dicyclohexyl (meth) acrylate, dicyclopentanyl (meth) acrylate, and dicyclopentenyloxyethyl (meth) acrylate.
  • the acrylic resin preferably has 4 or more C atoms / O atoms in the molecule. If the C atom / O atom is 4 or more, the acrylic resin becomes a resin having a relatively low polarity, and the organic component in the organic / inorganic perovskite compound is eluted into the sealing layer at the time of sealing. It can suppress that a perovskite compound deteriorates. Further, when the C atom / O atom is 4 or more, molecular diffusion over time is suppressed, and the heat resistance durability of the perovskite solar cell is improved.
  • the C atom / O atom is more preferably 5 or more, and still more preferably 6 or more.
  • the C atom / O atom is preferably 30 or less, and more preferably 20 or less.
  • numerator of an acrylic resin is the CHN / O elemental analysis using an organic trace element analyzer (For example, Perkin Elmer 2400II), NMR apparatus (For example, JEOL). It can be measured by solution NMR using ECA II).
  • the value of C atom / O atom in the molecule of the acrylic resin can be easily controlled by adjusting the kind and composition of the monomer constituting the acrylic resin.
  • an acrylic resin having 4 or more C atoms / O atoms can be obtained by homopolymerizing or copolymerizing a monomer having 4 or more C atoms / O atoms in the molecule. .
  • Examples of the monomer having 4 or more C atoms / O atoms in the molecule include an alkyl group having 8 or more carbon atoms such as ethylhexyl (meth) acrylate, lauryl (meth) acrylate, stearyl (meth) acrylate (meta) ) Alkyl acrylate.
  • (meth) acrylates having an alicyclic skeleton such as isobornyl (meth) acrylate, norbornyl (meth) acrylate, adamantyl (meth) acrylate, cyclohexyl (meth) acrylate, and the like can be given.
  • (meth) acrylate etc. which have groups (for example, a hydroxyl group, a carboxyl group, an epoxy group, etc.) which can add reactive functional groups, such as hydroxyl ethyl hexyl (meth) acrylate, are mentioned. These monomers may be used independently and 2 or more types may be used together.
  • (meth) alkyl acrylate having an alkyl group having 8 or more carbon atoms (meth) acrylate having an alicyclic skeleton, and a group to which a reactive functional group can be added (for example, a hydroxyl group, a carboxyl group, an epoxy group, etc.)
  • the (meth) acrylate etc. which have are preferable, and the (meth) acrylate which has alicyclic skeleton is suitable.
  • the acrylic resin may be a resin obtained by forming a copolymer having a reactive functional group and then crosslinking the reactive functional group with a crosslinking agent.
  • a crosslinking agent for example, an epoxy group, a hydroxyl group, a carboxyl group, an alkenyl group, an isocyanate group etc. are mentioned, for example.
  • the said crosslinking agent is not specifically limited,
  • the crosslinking reaction of the said reactive functional group can be started using a catalyst etc.
  • the acrylic resin may be a resin obtained by forming a film of the monomer as it is and then crosslinking or polymerizing the monomer with heat or UV.
  • the acrylic resin has a preferable lower limit of the solubility parameter (SP value) of 7.0 and a preferable upper limit of 10.0. If the SP value is 7.0 or more, the range of resin options is widened and molding becomes easy. When the SP value is 10.0 or less, it is possible to suppress deterioration of the organic / inorganic perovskite compound by elution of the organic component in the organic / inorganic perovskite compound into the sealing layer at the time of sealing.
  • the more preferable lower limit of the SP value is 7.5, and the more preferable lower limit is 8.0. From the viewpoint of enhancing the high temperature durability of the perovskite solar cell, the upper limit of the SP value is more preferably 9.5, and still more preferably 9.0.
  • the SP value is called a solubility parameter, and is an index that can express the ease of dissolution.
  • the method proposed by Fedors (R. F. Fedors, Polym. Eng. Sci., 14 (2), 147-154 (1974)) is used to calculate the SP value.
  • the SP value can be calculated according to the following formula (1) from the evaporation energy ( ⁇ ecoh) (cal / mol) and the molar volume ( ⁇ v) (cm 3 / mol) for each atomic group in the repeating unit.
  • represents an SP value (cal / mol) 1/2 .
  • the SP value of the copolymer can be calculated by the following formula (2) by calculating the SP value of each repeating unit alone in the copolymer and using the volume fraction thereof.
  • ⁇ cop represents the SP value of the copolymer
  • ⁇ 1, ⁇ 2 represents the volume fraction of the repeating units 1 and 2
  • ⁇ 1, ⁇ 2 represents the SP value of the repeating units 1 and 2 alone.
  • the refractive index difference between the sealing layer and the counter electrode is 0.4 or less.
  • the refractive index of the resin constituting the sealing layer is preferably 1.6 to 2.0.
  • the resin having such a refractive index include an epoxy resin, an acrylic resin, a silicone resin, and a phenol resin.
  • the said sealing layer contains resin which has an aromatic skeleton. That is, the sealing layer preferably contains a resin having an aromatic skeleton, and the refractive index of the resin having an aromatic skeleton is 1.6 to 2.0.
  • aromatic skeletons include triazine skeleton resins, fluorene skeleton resins, naphthalene skeleton resins, biphenyl skeleton resins, and fluorene skeleton resins.
  • the resin constituting the sealing layer preferably has a molecular weight of 100,000 to 1,000,000.
  • the molecular weight is 100,000 or more, damage during the inorganic layer deposition can be suppressed, and transparency is improved.
  • the molecular weight is 1000000 or less, the fixability of the inorganic layer is improved.
  • the preferable lower limit of the thickness of the sealing layer is 100 nm, and the preferable upper limit is 100,000 nm.
  • the thickness is 100 nm or more, the counter electrode can be sufficiently covered by the sealing layer.
  • the thickness is 100000 nm or less, water vapor entering from the side surface of the sealing layer can be sufficiently blocked.
  • the more preferable lower limit of the thickness is 500 nm, the more preferable upper limit is 50000 nm, the still more preferable lower limit is 1000 nm, and the still more preferable upper limit is 2000 nm.
  • the perovskite solar cell of the present invention preferably further has an inorganic layer that seals the outside of the sealing layer.
  • the said inorganic layer exhibits water vapor
  • the inorganic layer is formed on the sealing layer instead of forming the inorganic layer on the counter electrode, the sealing layer plays a role of filling and flattening the unevenness on the surface of the counter electrode. The inorganic layer can be more easily adhered.
  • the inorganic layer preferably contains a metal oxide, a metal nitride, or a metal oxynitride.
  • the metal oxide, metal nitride or metal oxynitride is not particularly limited as long as it has a water vapor barrier property.
  • an oxide, nitride or oxynitride of a metal element containing both metal elements of Zn and Sn is preferable.
  • the metal oxide, metal nitride or metal oxynitride is particularly preferably a general formula Zn a Sn b O c metal oxide represented by (ZTO).
  • ZTO metal oxide represented by (ZTO)
  • the metal oxide represented by the general formula Zn a Sn b O c for the inorganic layer, the metal oxide contains tin (Sn) atoms, and thus gives the inorganic layer appropriate flexibility. Even when the thickness of the inorganic layer is increased, the stress is reduced, so that peeling of the inorganic layer, the electrode, the semiconductor layer, and the like can be suppressed. Thereby, the water vapor
  • the ratio Xs (wt%) of Sn to the sum of Zn and Sn satisfies 70>Xs> 0.
  • the element ratio of zinc (Zn), tin (Sn), and oxygen (O) contained in the metal oxide represented by the general formula Zn a Sn b O c in the inorganic layer is determined by X-ray photoelectron spectroscopy ( It can be measured using an XPS) surface analyzer (for example, ESCALAB-200R manufactured by VG Scientific).
  • the inorganic layer when containing a metal oxide represented by the general formula Zn a Sn b O c, preferably further contains silicon (Si) and / or aluminum (Al).
  • silicon (Si) and / or aluminum (Al) By adding silicon (Si) and / or aluminum (Al) to the inorganic layer, the transparency of the inorganic layer can be increased and the photoelectric conversion efficiency of the perovskite solar cell can be improved.
  • the inorganic layer preferably has a refractive index close to that of the counter electrode.
  • the refractive index of the inorganic layer is close to the refractive index of the counter electrode, not only the refractive index difference between the counter electrode and the sealing layer but also the inorganic layer by adjusting the refractive index of the sealing layer. Since the refractive index difference of the sealing layer is also reduced, reflection of light at the interface between the inorganic layer and the sealing layer can be suppressed, and the photoelectric conversion efficiency can be increased.
  • the preferable lower limit of the thickness of the inorganic layer is 30 nm, and the preferable upper limit is 3000 nm. If the said thickness is 30 nm or more, the said inorganic layer can have sufficient water vapor
  • the more preferable lower limit of the thickness is 50 nm, the more preferable upper limit is 1000 nm, the still more preferable lower limit is 100 nm, and the still more preferable upper limit is 500 nm.
  • the thickness of the inorganic layer can be measured using an optical interference film thickness measuring device (for example, FE-3000 manufactured by Otsuka Electronics Co., Ltd.).
  • FIG. 2 is a cross-sectional view schematically showing an example of the perovskite solar cell of the present invention.
  • the perovskite solar cell 1 shown in FIG. 2 has an electrode 2, a counter electrode 3, and a photoelectric conversion layer 4 disposed between the electrode 2 and the counter electrode 3 on a substrate 7.
  • the sealing layer 5 is arrange
  • the counter electrode 3 is a patterned electrode.
  • the method for producing the perovskite solar cell of the present invention is not particularly limited. For example, after forming the electrode, the photoelectric conversion layer, and the counter electrode in this order on the substrate, the sealing layer is formed on the counter electrode. And a method of arranging the inorganic layer on the sealing layer.
  • the method for forming the photoelectric conversion layer is not particularly limited, and examples thereof include a vacuum deposition method, a sputtering method, a gas phase reaction method (CVD), an electrochemical deposition method, and a printing method.
  • the solar cell which can exhibit high photoelectric conversion efficiency can be simply formed in a large area by employ
  • the printing method include a spin coating method and a casting method, and examples of a method using the printing method include a roll-to-roll method.
  • the method of disposing the sealing layer on the counter electrode is not particularly limited.
  • coat the dissolved resin solution on the said counter electrode are mentioned.
  • a method of polymerizing a liquid monomer with heat or UV after applying a liquid monomer to be a sealing layer on the counter electrode, a method of cooling after melting the sealing layer with heat, and the like can be mentioned. .
  • a vacuum deposition method As a method of disposing the inorganic layer on the sealing layer, a vacuum deposition method, a sputtering method, a gas phase reaction method (CVD), or an ion plating method is preferable.
  • the sputtering method is more preferable for forming a dense layer, and the DC magnetron sputtering method is more preferable among the sputtering methods.
  • an inorganic layer can be formed by using a metal target and oxygen gas or nitrogen gas as raw materials and depositing the raw material on the sealing layer to form a film.
  • a perovskite solar cell with high photoelectric conversion efficiency can be provided.
  • Example 1 Fabrication of laminated body in which electrode / electron transport layer / photoelectric conversion layer / hole transport layer / counter electrode are laminated On a glass substrate, an FTO film having a thickness of 1000 nm is formed as an electrode, and pure water, acetone, and methanol are added. Using this order, each was subjected to ultrasonic cleaning for 10 minutes and then dried. A titanium isopropoxide ethanol solution adjusted to 2% was applied on the surface of the FTO film by a spin coating method, followed by baking at 400 ° C. for 10 minutes to form a thin-film electron transport layer having a thickness of 20 nm.
  • a titanium oxide paste containing polyisobutyl methacrylate as an organic binder and titanium oxide (a mixture of an average particle size of 10 nm and 30 nm) is applied onto the thin film electron transport layer by a spin coat method, and then heated to 500 ° C. Was fired for 10 minutes to form a porous electron transport layer having a thickness of 500 nm.
  • CH 3 NH 3 I and PbCl 2 were dissolved at a molar ratio of 3: 1 using N, N-dimethylformamide (DMF) as a solvent as a photoelectric conversion layer forming solution, and the total weight of CH 3 NH 3 I and PbCl 2 The concentration was adjusted to 20%. This solution was laminated on the electron transport layer by spin coating.
  • DMF N, N-dimethylformamide
  • a 1% by weight chlorobenzene solution of Poly (4-butylphenyl-diphenyl-amine) (manufactured by 1-Material) was laminated as a hole transport layer on the organic / inorganic perovskite compound site to a thickness of 50 nm by spin coating.
  • an ITO film having a thickness of 100 nm was formed as a counter electrode by vacuum vapor deposition to obtain a laminate in which the electrode / electron transport layer / photoelectric conversion layer / hole transport layer / counter electrode were stacked.
  • the obtained powder was dispersed in cyclohexane so as to be 10% by weight to obtain an inorganic filler dispersion.
  • (2-3) Formation of sealing layer Acrylic resin solution obtained in “(2-1) Synthesis of acrylic resin and preparation of acrylic resin solution” and “(2-2) Synthesis of inorganic filler and inorganic filler dispersion liquid”
  • the inorganic filler dispersion obtained in “Preparation” was mixed at a volume ratio of 7: 3, and 4% by weight of perhexyl PV was added to the solute weight to obtain a resin solution having an inorganic filler content of 50% by weight.
  • the obtained resin solution was applied onto the counter electrode by the doctor blade method and heated on a hot plate at 100 ° C. for 10 minutes to form a sealing layer containing an inorganic filler.
  • Example 3 A perovskite solar cell in the same manner as in Example 1 except that the content of the inorganic filler was changed as shown in Table 1 by changing the type of the inorganic filler and the mixing ratio of the acrylic resin solution and the inorganic filler dispersion. Got.
  • zirconium oxide nanoparticle methanol dispersion manufactured by Sakai Chemical Industry Co., Ltd., SZR-M, average particle size: 3 nm
  • phosphate ester including P
  • Organic group carbon number 18, SC Organic Chemical Co., Ltd., Phoslex A-18D
  • tungsten oxide nanoparticle isopropanol dispersion manufactured by Nanograde AG, 6040-W, average particle size: 15 nm
  • titanium oxide nanoparticle methanol dispersion manufactured by Sakai Chemical Industry Co., Ltd., R-38L, average particle size 400 nm
  • phosphate ester containing P, organic group as surface modifier
  • Carbon number 18, manufactured by SC Organic Chemicals, Phoslex A-18D
  • Example 13 (1) Production of laminate in which electrode / electron transport layer / photoelectric conversion layer / hole transport layer / counter electrode are laminated In the same manner as in Example 1, electrode / electron transport layer / photoelectric conversion layer / hole transport layer / opposite A laminate in which electrodes were laminated was produced.
  • sealing layer A resin having a triazine skeleton (Nissan Chemical Co., Ltd., UR-101) was coated on the counter electrode by the doctor blade method, and heated and sealed on a hot plate at 100 ° C for 10 minutes. A layer was formed.
  • Example 14 comparative example 4
  • a perovskite solar cell was obtained in the same manner as in Example 13 except that the type of resin for the sealing layer was changed as shown in Table 1. The following resin was used.
  • OGSOL EA-0200 fluorene skeleton, Nissan Chemical Co., Ltd.
  • TOPAS6017 cycloolefin polymer, manufactured by Polyplastics
  • Comparative Example 2 (1) Production of laminate in which electrode / electron transport layer / photoelectric conversion layer / hole transport layer / counter electrode are laminated In the same manner as in Example 1, electrode / electron transport layer / photoelectric conversion layer / hole transport layer / opposite A laminate in which electrodes were laminated was produced.
  • Photoelectric conversion efficiency A power source (manufactured by KEITHLEY, 236 model) is connected between the electrodes of the solar cell, and the photoelectric conversion efficiency is measured by using a solar simulation (manufactured by Yamashita Denso Co., Ltd.) having an intensity of 100 mW / cm 2. The obtained photoelectric conversion efficiency was defined as the initial conversion efficiency.
  • the solar cell obtained in Comparative Example 1 was normalized based on the initial conversion efficiency, and evaluated according to the following criteria.
  • O Normalized value is 1.0 or more and less than 1.05.
  • X Normalized value is less than 1.0.
  • a perovskite solar cell with high photoelectric conversion efficiency can be provided.

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Abstract

The purpose of the present invention is to provide a perovskite solar cell with high photoelectric conversion efficiency. The perovskite solar cell according to the present invention has: a laminate including an electrode, a counter electrode, and a photoelectric conversion layer disposed between the electrode and the counter electrode; and a sealing layer that covers the counter electrode and seals the laminate. The photoelectric conversion layer includes an organic-inorganic perovskite compound represented by general formula R-M-X3 (here, R is an organic molecule, M is a metal atom, and X is a halogen atom or a chalcogen atom), and the difference in refractive index between the sealing layer and the counter electrode is 0.4 or less.

Description

ペロブスカイト太陽電池Perovskite solar cells

本発明は、光電変換効率が高いペロブスカイト太陽電池に関する。 The present invention relates to a perovskite solar cell with high photoelectric conversion efficiency.

従来から、対向する電極間にN型半導体層とP型半導体層とを配置した積層体を備えた光電変換素子が開発されている。このような光電変換素子では、光励起により光キャリアが生成し、電子がN型半導体を、ホールがP型半導体を移動することで、電界が生じる。 Conventionally, a photoelectric conversion element including a stacked body in which an N-type semiconductor layer and a P-type semiconductor layer are arranged between opposing electrodes has been developed. In such a photoelectric conversion element, photocarriers are generated by photoexcitation, and an electric field is generated by electrons moving through an N-type semiconductor and holes moving through a P-type semiconductor.

現在、実用化されている光電変換素子の多くは、シリコン等の無機半導体を用いて製造される無機太陽電池である。しかしながら、無機太陽電池は製造にコストがかかるうえ大型化が困難であり、利用範囲が限られてしまうという問題があった。そこで、無機半導体の代わりに有機半導体を用いて製造される有機太陽電池が注目されている。 Currently, most of the photoelectric conversion elements in practical use are inorganic solar cells manufactured using an inorganic semiconductor such as silicon. However, inorganic solar cells are expensive to manufacture and difficult to increase in size, resulting in a limited range of use. Thus, an organic solar cell manufactured using an organic semiconductor instead of an inorganic semiconductor has attracted attention.

有機太陽電池においては、ほとんどの場合フラーレンが用いられている。フラーレンは、主にN型半導体として働くことが知られている。例えば、特許文献1には、P型半導体となる有機化合物とフラーレン類とを用いて形成された半導体ヘテロ接合膜が記載されている。しかしながら、フラーレンを用いて製造される有機太陽電池において、その劣化の原因はフラーレンであることが知られており(例えば、非特許文献1参照)、フラーレンに代わる材料が求められている。 In organic solar cells, fullerene is almost always used. Fullerenes are known to work mainly as N-type semiconductors. For example, Patent Document 1 describes a semiconductor heterojunction film formed using an organic compound that becomes a P-type semiconductor and fullerenes. However, in organic solar cells manufactured using fullerenes, it is known that the cause of deterioration is fullerenes (see, for example, Non-Patent Document 1), and materials that replace fullerenes are required.

そこで近年、中心金属に鉛、スズ等を用いたペロブスカイト構造を有する有機無機ペロブスカイト化合物が光電変換材料として見出され、高い光電変換効率を有することが示された(例えば、非特許文献2)。しかしながら、従来の有機無機ペロブスカイト化合物を光電変換層に用いたペロブスカイト太陽電池は、期待されるほどの光電変換効率を示さないという問題があった。 Therefore, in recent years, an organic inorganic perovskite compound having a perovskite structure using lead, tin, or the like as a central metal has been found as a photoelectric conversion material, and has been shown to have high photoelectric conversion efficiency (for example, Non-Patent Document 2). However, the perovskite solar cell using a conventional organic / inorganic perovskite compound for the photoelectric conversion layer has a problem that it does not exhibit the photoelectric conversion efficiency as expected.

特開2006-344794号公報JP 2006-344794 A

Reese et al.,Adv.Funct.Mater.,20,3476-3483(2010)Reese et al. , Adv. Funct. Mater. , 20, 3476-3483 (2010) M.M.Lee et al.,Science,338,643-647(2012)M.M. M.M. Lee et al. , Science, 338, 643-647 (2012)

本発明は、光電変換効率が高いペロブスカイト太陽電池を提供することを目的とする。 An object of this invention is to provide the perovskite solar cell with high photoelectric conversion efficiency.

本発明は、電極と、対向電極と、前記電極と前記対向電極との間に配置された光電変換層とを有する積層体と、前記対向電極上を覆って前記積層体を封止する封止層とを有するペロブスカイト太陽電池であって、前記光電変換層は、一般式R-M-X(但し、Rは有機分子、Mは金属原子、Xはハロゲン原子又はカルコゲン原子である。)で表される有機無機ペロブスカイト化合物を含み、前記封止層と前記対向電極との屈折率差が0.4以下であるペロブスカイト太陽電池である。
以下、本発明を詳述する。
The present invention provides a laminate having an electrode, a counter electrode, and a photoelectric conversion layer disposed between the electrode and the counter electrode, and sealing for covering the counter electrode and sealing the laminate. The photoelectric conversion layer has a general formula R-MX 3 (where R is an organic molecule, M is a metal atom, and X is a halogen atom or a chalcogen atom). The perovskite solar cell includes an organic / inorganic perovskite compound and has a refractive index difference of 0.4 or less between the sealing layer and the counter electrode.
The present invention is described in detail below.

本発明者らは、従来のペロブスカイト太陽電池の光電変換効率が期待したほど上がらない原因について検討した。その結果、封止層を通過した光が上部透明電極との界面で反射していることが原因であることを見出した。有機無機ペロブスカイト化合物を含む光電変換層は水分に弱い性質があるため、電極と光電変換層との積層体は主に樹脂又は無機材料からなる封止層によって封止されている。しかしながら、封止層は上部透明電極と比べて屈折率が小さく、封止層と上部透明電極との屈折率の差が大きくなっていたため、入射した光の一部が封止層と上部透明電極との界面で反射してしまい、光電変換効率が下がっていた。そこで、本発明者らは更に検討したところ、封止層中に無機フィラーを含有させたり、封止層を構成する樹脂を選択したりすることによって封止層の屈折率が高くなり、上部透明電極との屈折率の差を小さくすることができることを見出した。その結果、封止層と上部透明電極との界面における光の反射を抑えてペロブスカイト太陽電池の光電変換効率を向上できることを見出し、本発明を完成させるに至った。 The present inventors examined the cause that the photoelectric conversion efficiency of the conventional perovskite solar cell does not increase as expected. As a result, it was found that the light that passed through the sealing layer was reflected at the interface with the upper transparent electrode. Since the photoelectric conversion layer containing the organic / inorganic perovskite compound has a property of being weak against moisture, the laminate of the electrode and the photoelectric conversion layer is sealed with a sealing layer mainly made of a resin or an inorganic material. However, the sealing layer has a lower refractive index than the upper transparent electrode, and the difference in refractive index between the sealing layer and the upper transparent electrode is large. And the photoelectric conversion efficiency was lowered. Therefore, the present inventors have further studied, and the refractive index of the sealing layer is increased by adding an inorganic filler in the sealing layer or selecting a resin constituting the sealing layer. It has been found that the difference in refractive index from the electrode can be reduced. As a result, it has been found that the photoelectric conversion efficiency of the perovskite solar cell can be improved by suppressing the reflection of light at the interface between the sealing layer and the upper transparent electrode, and the present invention has been completed.

本発明のペロブスカイト太陽電池は、電極と、対向電極と、前記電極と前記対向電極との間に配置された光電変換層とを有する積層体を有する。
なお、本明細書中、層とは、明確な境界を有する層だけではなく、含有元素が徐々に変化する濃度勾配のある層をも意味する。なお、層の元素分析は、例えば、太陽電池の断面のFE-TEM/EDS線分析測定を行い、特定元素の元素分布を確認する等によって行うことができる。また、本明細書中、層とは、平坦な薄膜状の層だけではなく、他の層と一緒になって複雑に入り組んだ構造を形成しうる層をも意味する。
The perovskite solar cell of this invention has a laminated body which has an electrode, a counter electrode, and the photoelectric converting layer arrange | positioned between the said electrode and the said counter electrode.
In this specification, the term “layer” means not only a layer having a clear boundary but also a layer having a concentration gradient in which contained elements gradually change. The elemental analysis of the layer can be performed, for example, by performing FE-TEM / EDS line analysis measurement of the cross section of the solar cell and confirming the element distribution of the specific element. In addition, in this specification, a layer means not only a flat thin film-like layer but also a layer that can form a complicated and complicated structure together with other layers.

上記電極及び上記対向電極の材料は特に限定されず、従来公知の材料を用いることができる。なお、上記対向電極は透明電極であり、パターニングされていることが多い。
上記電極の材料としては、例えば、FTO(フッ素ドープ酸化スズ)、金、銀、チタン、ナトリウム、ナトリウム-カリウム合金、リチウム、マグネシウム、アルミニウム、マグネシウム-銀混合物、マグネシウム-インジウム混合物、アルミニウム-リチウム合金、Al/Al混合物、Al/LiF混合物、金等の金属が挙げられる。上記対向電極の材料としては、CuI、ITO(インジウムスズ酸化物)、SnO、AZO(アルミニウム亜鉛酸化物)、IZO(インジウム亜鉛酸化物)、GZO(ガリウム亜鉛酸化物)、ATO(アンチモンドープ酸化スズ)等の導電性透明材料、導電性透明ポリマー等が挙げられる。これらの材料は単独で用いられてもよく、2種以上が併用されてもよい。また、上記電極及び上記対向電極は、それぞれ陰極になっても、陽極になってもよい。
The material of the said electrode and the said counter electrode is not specifically limited, A conventionally well-known material can be used. The counter electrode is a transparent electrode and is often patterned.
Examples of the electrode material include FTO (fluorine-doped tin oxide), gold, silver, titanium, sodium, sodium-potassium alloy, lithium, magnesium, aluminum, magnesium-silver mixture, magnesium-indium mixture, and aluminum-lithium alloy. , Al / Al 2 O 3 mixtures, Al / LiF mixtures, metals such as gold. As the material of the counter electrode, CuI, ITO (indium tin oxide), SnO 2 , AZO (aluminum zinc oxide), IZO (indium zinc oxide), GZO (gallium zinc oxide), ATO (antimony-doped oxide) Examples thereof include conductive transparent materials such as tin) and conductive transparent polymers. These materials may be used alone or in combination of two or more. Further, the electrode and the counter electrode may be a cathode or an anode, respectively.

上記対向電極の屈折率は特に限定されないが、通常1.8~2.2程度である。 The refractive index of the counter electrode is not particularly limited, but is usually about 1.8 to 2.2.

上記光電変換層は、一般式R-M-X(但し、Rは有機分子、Mは金属原子、Xはハロゲン原子又はカルコゲン原子である。)で表される有機無機ペロブスカイト化合物を含む。
上記光電変換層に上記有機無機ペロブスカイト化合物を用いることにより、ペロブスカイト太陽電池の光電変換効率を向上させることができる。また、上記有機無機ペロブスカイト化合物は耐湿性が低いが、上記対向電極上に後述するような封止層を配置することでペロブスカイト太陽電池の耐久性を向上させることができる。
The photoelectric conversion layer includes an organic / inorganic perovskite compound represented by the general formula R-MX 3 (where R is an organic molecule, M is a metal atom, and X is a halogen atom or a chalcogen atom).
By using the organic-inorganic perovskite compound for the photoelectric conversion layer, the photoelectric conversion efficiency of the perovskite solar cell can be improved. Moreover, although the said organic inorganic perovskite compound has low moisture resistance, durability of a perovskite solar cell can be improved by arrange | positioning the sealing layer which is mentioned later on the said counter electrode.

上記Rは有機分子であり、C(l、m、nはいずれも正の整数)で示されることが好ましい。
上記Rは、具体的には例えば、メチルアミン、エチルアミン、プロピルアミン、ブチルアミン、ペンチルアミン、ヘキシルアミン、ジメチルアミン、ジエチルアミン、ジプロピルアミン、ジブチルアミン、ジペンチルアミン、ジヘキシルアミン、トリメチルアミン、トリエチルアミン、トリプロピルアミン、トリブチルアミン、トリペンチルアミン、トリヘキシルアミン、エチルメチルアミン、メチルプロピルアミン、ブチルメチルアミン、メチルペンチルアミン、ヘキシルメチルアミン、エチルプロピルアミン、エチルブチルアミン、イミダゾール、アゾール、ピロール、アジリジン、アジリン、アゼチジン、アゼト、アゾール、イミダゾリン、カルバゾール及びこれらのイオン(例えば、メチルアンモニウム(CHNH)等)やフェネチルアンモニウム等が挙げられる。なかでも、メチルアミン、エチルアミン、プロピルアミン、ブチルアミン、ペンチルアミン、ヘキシルアミン及びこれらのイオンやフェネチルアンモニウムが好ましく、メチルアミン、エチルアミン、プロピルアミン及びこれらのイオンがより好ましい。
The R is an organic molecule, and is preferably represented by C 1 N m H n (l, m, and n are all positive integers).
Specifically, R is, for example, methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, dimethylamine, diethylamine, dipropylamine, dibutylamine, dipentylamine, dihexylamine, trimethylamine, triethylamine, tripropyl. Amine, tributylamine, tripentylamine, trihexylamine, ethylmethylamine, methylpropylamine, butylmethylamine, methylpentylamine, hexylmethylamine, ethylpropylamine, ethylbutylamine, imidazole, azole, pyrrole, aziridine, azirine, Azetidine, azeto, azole, imidazoline, carbazole and their ions (eg, methylammonium (CH 3 NH 3 )) and fluorine And enethylammonium. Of these, methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine and their ions and phenethylammonium are preferred, and methylamine, ethylamine, propylamine and these ions are more preferred.

上記Mは金属原子であり、例えば、鉛、スズ、亜鉛、チタン、アンチモン、ビスマス、ニッケル、鉄、コバルト、銀、銅、ガリウム、ゲルマニウム、マグネシウム、カルシウム、インジウム、アルミニウム、マンガン、クロム、モリブデン、ユーロピウム等が挙げられる。これらの金属原子は単独で用いられてもよく、2種以上が併用されてもよい。 M is a metal atom, for example, lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, Europium etc. are mentioned. These metal atoms may be used independently and 2 or more types may be used together.

上記Xはハロゲン原子又はカルコゲン原子であり、例えば、塩素、臭素、ヨウ素、硫黄、セレン等が挙げられる。これらのハロゲン原子又はカルコゲン原子は単独で用いられてもよく、2種以上が併用されてもよい。なかでも、構造中にハロゲンを含有することで、上記有機無機ペロブスカイト化合物が有機溶媒に可溶になり、安価な印刷法等への適用が可能になることから、ハロゲン原子が好ましい。更に、上記有機無機ペロブスカイト化合物のエネルギーバンドギャップが狭くなることから、ヨウ素がより好ましい。 X is a halogen atom or a chalcogen atom, and examples thereof include chlorine, bromine, iodine, sulfur, and selenium. These halogen atoms or chalcogen atoms may be used alone or in combination of two or more. Among these, the halogen atom is preferable because the organic / inorganic perovskite compound becomes soluble in an organic solvent and can be applied to an inexpensive printing method by containing halogen in the structure. Furthermore, iodine is more preferable because the energy band gap of the organic-inorganic perovskite compound becomes narrow.

上記有機無機ペロブスカイト化合物は、体心に金属原子M、各頂点に有機分子R、面心にハロゲン原子又はカルコゲン原子Xが配置された立方晶系の構造を有することが好ましい。
図1は、体心に金属原子M、各頂点に有機分子R、面心にハロゲン原子又はカルコゲン原子Xが配置された立方晶系の構造である、有機無機ペロブスカイト化合物の結晶構造の一例を示す模式図である。詳細は明らかではないが、上記構造を有することにより、結晶格子内の八面体の向きが容易に変わることができるため、上記有機無機ペロブスカイト化合物中の電子の移動度が高くなり、ペロブスカイト太陽電池の光電変換効率が向上すると推定される。
The organic / inorganic perovskite compound preferably has a cubic structure in which a metal atom M is disposed at the body center, an organic molecule R is disposed at each vertex, and a halogen atom or a chalcogen atom X is disposed at the face center.
FIG. 1 shows an example of a crystal structure of an organic / inorganic perovskite compound having a cubic structure in which a metal atom M is arranged at the body center, an organic molecule R is arranged at each vertex, and a halogen atom or a chalcogen atom X is arranged at the face center. It is a schematic diagram. Although details are not clear, since the orientation of the octahedron in the crystal lattice can be easily changed by having the above structure, the mobility of electrons in the organic-inorganic perovskite compound is increased, and the perovskite solar cell It is estimated that the photoelectric conversion efficiency is improved.

上記有機無機ペロブスカイト化合物は、結晶性半導体であることが好ましい。結晶性半導体とは、X線散乱強度分布を測定し、散乱ピークが検出できる半導体を意味している。上記有機無機ペロブスカイト化合物が結晶性半導体であることにより、上記有機無機ペロブスカイト化合物中の電子の移動度が高くなり、ペロブスカイト太陽電池の光電変換効率が向上する。 The organic / inorganic perovskite compound is preferably a crystalline semiconductor. The crystalline semiconductor means a semiconductor capable of measuring the X-ray scattering intensity distribution and detecting a scattering peak. When the organic / inorganic perovskite compound is a crystalline semiconductor, the mobility of electrons in the organic / inorganic perovskite compound is increased, and the photoelectric conversion efficiency of the perovskite solar cell is improved.

また、結晶化の指標として結晶化度を評価することもできる。結晶化度は、X線散乱強度分布測定により検出された結晶質由来の散乱ピークと非晶質部由来のハローとをフィッティングにより分離し、それぞれの強度積分を求めて、全体のうちの結晶部分の比を算出することにより求めることができる。
上記有機無機ペロブスカイト化合物の結晶化度の好ましい下限は30%である。結晶化度が30%以上であると、上記有機無機ペロブスカイト化合物中の電子の移動度が高くなり、ペロブスカイト太陽電池の光電変換効率が向上する。結晶化度のより好ましい下限は50%、更に好ましい下限は70%である。
また、上記有機無機ペロブスカイト化合物の結晶化度を上げる方法として、例えば、熱アニール、レーザー等の強度の強い光の照射、プラズマ照射等が挙げられる。
In addition, the degree of crystallization can be evaluated as an index of crystallization. The degree of crystallinity is determined by separating the crystalline-derived scattering peak detected by the X-ray scattering intensity distribution measurement and the halo derived from the amorphous part by fitting, obtaining the respective intensity integrals, Can be obtained by calculating the ratio.
A preferable lower limit of the crystallinity of the organic-inorganic perovskite compound is 30%. When the crystallinity is 30% or more, the mobility of electrons in the organic / inorganic perovskite compound is increased, and the photoelectric conversion efficiency of the perovskite solar cell is improved. A more preferred lower limit of the crystallinity is 50%, and a more preferred lower limit is 70%.
Examples of the method for increasing the crystallinity of the organic / inorganic perovskite compound include thermal annealing, irradiation with intense light such as laser, and plasma irradiation.

上記光電変換層が上記有機無機ペロブスカイト化合物を含む場合、上記光電変換層は、本発明の効果を損なわない範囲内であれば、上記有機無機ペロブスカイト化合物に加えて、更に、有機半導体又は無機半導体を含んでいてもよい。なお、ここでいう有機半導体又は無機半導体は、後述する電子輸送層又はホール輸送層としての役割を果たしてもよい。
上記有機半導体として、例えば、ポリ(3-アルキルチオフェン)等のチオフェン骨格を有する化合物等が挙げられる。また、例えば、ポリパラフェニレンビニレン骨格、ポリビニルカルバゾール骨格、ポリアニリン骨格、ポリアセチレン骨格等を有する導電性高分子等も挙げられる。更に、例えば、フタロシアニン骨格、ナフタロシアニン骨格、ペンタセン骨格、ベンゾポルフィリン骨格等のポルフィリン骨格、スピロビフルオレン骨格等を有する化合物や、表面修飾されていてもよいカーボンナノチューブ、グラフェン、フラーレン等のカーボン含有材料も挙げられる。
When the photoelectric conversion layer contains the organic / inorganic perovskite compound, the photoelectric conversion layer further includes an organic semiconductor or an inorganic semiconductor in addition to the organic / inorganic perovskite compound as long as the effect of the present invention is not impaired. May be included. Note that the organic semiconductor or inorganic semiconductor referred to here may serve as an electron transport layer or a hole transport layer described later.
Examples of the organic semiconductor include compounds having a thiophene skeleton such as poly (3-alkylthiophene). In addition, for example, conductive polymers having a polyparaphenylene vinylene skeleton, a polyvinyl carbazole skeleton, a polyaniline skeleton, a polyacetylene skeleton, and the like can be given. Further, for example, compounds having a porphyrin skeleton such as a phthalocyanine skeleton, a naphthalocyanine skeleton, a pentacene skeleton, or a benzoporphyrin skeleton, a spirobifluorene skeleton, etc., and carbon-containing materials such as carbon nanotubes, graphene, and fullerene that may be surface-modified Also mentioned.

上記無機半導体として、例えば、酸化チタン、酸化亜鉛、酸化インジウム、酸化スズ、酸化ガリウム、硫化スズ、硫化インジウム、硫化亜鉛、CuSCN、CuO、CuI、MoO、V、WO、MoS、MoSe、CuS等が挙げられる。 Examples of the inorganic semiconductor include titanium oxide, zinc oxide, indium oxide, tin oxide, gallium oxide, tin sulfide, indium sulfide, zinc sulfide, CuSCN, Cu 2 O, CuI, MoO 3 , V 2 O 5 , WO 3 , MoS 2, MoSe 2, Cu 2 S , and the like.

上記光電変換層は、上記有機無機ペロブスカイト化合物と上記有機半導体又は上記無機半導体とを含む場合、薄膜状の有機半導体又は無機半導体部位と薄膜状の有機無機ペロブスカイト化合物部位とを積層した積層体であってもよいし、有機半導体又は無機半導体部位と有機無機ペロブスカイト化合物部位とを複合化した複合膜であってもよい。製法が簡便である点では積層体が好ましく、上記有機半導体又は上記無機半導体中の電荷分離効率を向上させることができる点では複合膜が好ましい。 In the case where the photoelectric conversion layer includes the organic-inorganic perovskite compound and the organic semiconductor or the inorganic semiconductor, the photoelectric conversion layer is a laminated body in which a thin-film organic semiconductor or an inorganic semiconductor portion and a thin-film organic-inorganic perovskite compound portion are stacked. Alternatively, a composite film in which an organic semiconductor or inorganic semiconductor part and an organic / inorganic perovskite compound part are combined may be used. A laminated body is preferable in that the production method is simple, and a composite film is preferable in that the charge separation efficiency in the organic semiconductor or the inorganic semiconductor can be improved.

上記薄膜状の有機無機ペロブスカイト化合物部位の厚みは、好ましい下限が5nm、好ましい上限が5000nmである。上記厚みが5nm以上であれば、充分に光を吸収することができるようになり、光電変換効率が高くなる。上記厚みが5000nm以下であれば、電荷分離できない領域が発生することを抑制できるため、光電変換効率の向上につながる。上記厚みのより好ましい下限は10nm、より好ましい上限は1000nmであり、更に好ましい下限は20nm、更に好ましい上限は500nmである。 The preferable lower limit of the thickness of the thin-film organic / inorganic perovskite compound site is 5 nm, and the preferable upper limit is 5000 nm. If the thickness is 5 nm or more, light can be sufficiently absorbed, and the photoelectric conversion efficiency is increased. If the said thickness is 5000 nm or less, since it can suppress that the area | region which cannot carry out charge separation generate | occur | produces, it leads to the improvement of photoelectric conversion efficiency. The more preferable lower limit of the thickness is 10 nm, the more preferable upper limit is 1000 nm, the still more preferable lower limit is 20 nm, and the still more preferable upper limit is 500 nm.

上記光電変換層が、有機半導体又は無機半導体部位と有機無機ペロブスカイト化合物部位とを複合化した複合膜である場合、上記複合膜の厚みの好ましい下限は30nm、好ましい上限は3000nmである。上記厚みが30nm以上であれば、充分に光を吸収することができるようになり、光電変換効率が高くなる。上記厚みが3000nm以下であれば、電荷が電極に到達しやすくなるため、光電変換効率が高くなる。上記厚みのより好ましい下限は40nm、より好ましい上限は2000nmであり、更に好ましい下限は50nm、更に好ましい上限は1000nmである。 When the photoelectric conversion layer is a composite film in which an organic semiconductor or an inorganic semiconductor part and an organic / inorganic perovskite compound part are combined, a preferable lower limit of the thickness of the composite film is 30 nm, and a preferable upper limit is 3000 nm. If the thickness is 30 nm or more, light can be sufficiently absorbed, and the photoelectric conversion efficiency is increased. If the said thickness is 3000 nm or less, since it becomes easy to reach | attain an electrode, a photoelectric conversion efficiency becomes high. The more preferable lower limit of the thickness is 40 nm, the more preferable upper limit is 2000 nm, the still more preferable lower limit is 50 nm, and the still more preferable upper limit is 1000 nm.

本発明のペロブスカイト太陽電池においては、上記電極又は上記対向電極のうちの陰極となるものと上記光電変換層との間に、電子輸送層が配置されていてもよい。
上記電子輸送層の材料は特に限定されず、例えば、N型導電性高分子、N型低分子有機半導体、N型金属酸化物、N型金属硫化物、ハロゲン化アルカリ金属、アルカリ金属、界面活性剤等が挙げられる。具体的には例えば、シアノ基含有ポリフェニレンビニレン、ホウ素含有ポリマー、バソキュプロイン、バソフェナントレン、ヒドロキシキノリナトアルミニウム、オキサジアゾール化合物、ベンゾイミダゾール化合物等が挙げられる。また、ナフタレンテトラカルボン酸化合物、ペリレン誘導体、ホスフィンオキサイド化合物、ホスフィンスルフィド化合物、フルオロ基含有フタロシアニン、酸化チタン、酸化亜鉛、酸化インジウム、酸化スズ、酸化ガリウム、硫化スズ、硫化インジウム、硫化亜鉛等が挙げられる。
In the perovskite solar cell of this invention, the electron carrying layer may be arrange | positioned between what becomes a cathode among the said electrodes or the said counter electrodes, and the said photoelectric converting layer.
The material of the electron transport layer is not particularly limited. For example, N-type conductive polymer, N-type low molecular organic semiconductor, N-type metal oxide, N-type metal sulfide, alkali metal halide, alkali metal, surface activity Agents and the like. Specific examples include cyano group-containing polyphenylene vinylene, boron-containing polymer, bathocuproine, bathophenanthrene, hydroxyquinolinato aluminum, oxadiazole compound, and benzimidazole compound. Also, naphthalene tetracarboxylic acid compound, perylene derivative, phosphine oxide compound, phosphine sulfide compound, fluoro group-containing phthalocyanine, titanium oxide, zinc oxide, indium oxide, tin oxide, gallium oxide, tin sulfide, indium sulfide, zinc sulfide, etc. It is done.

上記電子輸送層は、薄膜状の電子輸送層のみからなっていてもよいが、多孔質状の電子輸送層を含むことが好ましい。特に、上記光電変換層が、有機半導体又は無機半導体部位と有機無機ペロブスカイト化合物部位とを複合化した複合膜である場合、より複雑な複合膜(より複雑に入り組んだ構造)が得られ、光電変換効率が高くなることから、多孔質状の電子輸送層上に複合膜が製膜されていることが好ましい。 The electron transport layer may consist of only a thin film electron transport layer, but preferably includes a porous electron transport layer. In particular, when the photoelectric conversion layer is a composite film in which an organic semiconductor or an inorganic semiconductor part and an organic / inorganic perovskite compound part are combined, a more complex composite film (a more complicated and complicated structure) is obtained. In order to increase efficiency, it is preferable that the composite film is formed on the porous electron transport layer.

上記電子輸送層の厚みは、好ましい下限が1nm、好ましい上限が2000nmである。上記厚みが1nm以上であれば、充分にホールをブロックできるようになる。上記厚みが2000nm以下であれば、電子輸送の際の抵抗になり難く、光電変換効率が高くなる。上記電子輸送層の厚みのより好ましい下限は3nm、より好ましい上限は1000nmであり、更に好ましい下限は5nm、更に好ましい上限は500nmである。 The preferable lower limit of the thickness of the electron transport layer is 1 nm, and the preferable upper limit is 2000 nm. If the thickness is 1 nm or more, holes can be sufficiently blocked. If the said thickness is 2000 nm or less, it will become difficult to become resistance at the time of electron transport, and photoelectric conversion efficiency will become high. The more preferable lower limit of the thickness of the electron transport layer is 3 nm, the more preferable upper limit is 1000 nm, the still more preferable lower limit is 5 nm, and the still more preferable upper limit is 500 nm.

本発明のペロブスカイト太陽電池においては、上記電極又は上記対向電極のうちの陽極となるものと上記光電変換層との間に、ホール輸送層が配置されていてもよい。
上記ホール輸送層の材料は特に限定されず、例えば、P型導電性高分子、P型低分子有機半導体、P型金属酸化物、P型金属硫化物、界面活性剤等が挙げられる。具体的には例えば、ポリエチレンジオキシチオフェンのポリスチレンスルホン酸付加物、カルボキシル基含有ポリチオフェン、フタロシアニン、ポルフィリン等が挙げられる。また、酸化モリブデン、酸化バナジウム、酸化タングステン、酸化ニッケル、酸化銅、酸化スズ、硫化モリブデン、硫化タングステン、硫化銅、硫化スズ等、フルオロ基含有ホスホン酸、カルボニル基含有ホスホン酸、CuSCN、CuI等の銅化合物、表面修飾されていてもよいカーボンナノチューブ、グラフェン等のカーボン含有材料等が挙げられる。
In the perovskite solar cell of this invention, the hole transport layer may be arrange | positioned between what becomes an anode among the said electrodes or the said counter electrodes, and the said photoelectric converting layer.
The material for the hole transport layer is not particularly limited, and examples thereof include a P-type conductive polymer, a P-type low molecular organic semiconductor, a P-type metal oxide, a P-type metal sulfide, and a surfactant. Specific examples include polyethylene dioxythiophene polystyrene sulfonate adduct, carboxyl group-containing polythiophene, phthalocyanine, porphyrin and the like. In addition, molybdenum oxide, vanadium oxide, tungsten oxide, nickel oxide, copper oxide, tin oxide, molybdenum sulfide, tungsten sulfide, copper sulfide, tin sulfide, etc., fluoro group-containing phosphonic acid, carbonyl group-containing phosphonic acid, CuSCN, CuI, etc. Examples thereof include copper compounds, carbon nanotubes that may be surface-modified, and carbon-containing materials such as graphene.

上記ホール輸送層の厚みは、好ましい下限は1nm、好ましい上限は2000nmである。上記厚みが1nm以上であれば、充分に電子をブロックできるようになる。上記厚みが2000nm以下であれば、ホール輸送の際の抵抗になり難く、光電変換効率が高くなる。上記厚みのより好ましい下限は3nm、より好ましい上限は1000nmであり、更に好ましい下限は5nm、更に好ましい上限は500nmである。 The preferable lower limit of the thickness of the hole transport layer is 1 nm, and the preferable upper limit is 2000 nm. If the thickness is 1 nm or more, electrons can be sufficiently blocked. If the said thickness is 2000 nm or less, it will become difficult to become resistance at the time of hole transport, and a photoelectric conversion efficiency will become high. The more preferable lower limit of the thickness is 3 nm, the more preferable upper limit is 1000 nm, the still more preferable lower limit is 5 nm, and the still more preferable upper limit is 500 nm.

本発明のペロブスカイト太陽電池は、更に、基板等を有していてもよい。上記基板は特に限定されず、例えば、ソーダライムガラス、無アルカリガラス等の透明ガラス基板、セラミック基板、透明プラスチック基板、金属基板等が挙げられる。なかでも、ペロブスカイト太陽電池のフレキシブル性付与の観点からは、透明プラスチック基板、金属基板等が好ましい。 The perovskite solar cell of the present invention may further have a substrate or the like. The said board | substrate is not specifically limited, For example, transparent glass substrates, such as soda-lime glass and an alkali free glass, a ceramic substrate, a transparent plastic substrate, a metal substrate, etc. are mentioned. Among these, from the viewpoint of imparting flexibility to the perovskite solar cell, a transparent plastic substrate, a metal substrate, or the like is preferable.

本発明のペロブスカイト太陽電池は、上記対向電極上を覆って上記積層体を封止する封止層を有する。
上記封止層が上記積層体を封止することにより、水分が内部に浸透することを抑制することができ、ペロブスカイト太陽電池の耐久性を向上させることができる。なお、本明細書中、封止層が「封止する」とは、封止層がその端部を閉じるようにして対象物全体を覆っていることを意味する。
The perovskite solar cell of the present invention has a sealing layer that covers the counter electrode and seals the stacked body.
When the sealing layer seals the stacked body, moisture can be prevented from penetrating into the inside, and durability of the perovskite solar cell can be improved. In the present specification, the term “sealing” of the sealing layer means that the sealing layer covers the entire object so as to close its end.

本発明のペロブスカイト太陽電池においては、上記封止層と上記対向電極との屈折率差が0.4以下である。上記封止層と上記対向電極との屈折率差を0.4以下とすることで、入射した光が上記封止層と上記対向電極との界面で反射することを防ぐことができるため、光電変換効率を向上させることができる。上記封止層と上記対向電極との屈折率差は0.3以下であることが好ましい。なお、屈折率は、分光エリプソメーターや自動薄膜計測装置(例えば、HORIBA Scientific社製、製品名:UVISEL2、HORIBA Scientific社製、製品名:Auto SE等)によって測定することができる。 In the perovskite solar cell of the present invention, the refractive index difference between the sealing layer and the counter electrode is 0.4 or less. Since the difference in refractive index between the sealing layer and the counter electrode is 0.4 or less, incident light can be prevented from being reflected at the interface between the sealing layer and the counter electrode. Conversion efficiency can be improved. The refractive index difference between the sealing layer and the counter electrode is preferably 0.3 or less. The refractive index can be measured with a spectroscopic ellipsometer or an automatic thin film measuring device (for example, HORIBA Scientific, product name: UVISEL2, HORIBA Scientific, product name: Auto SE, etc.).

本発明のペロブスカイト太陽電池においては、封止層中に無機フィラーを含有させたり、封止層を構成する樹脂を選択したりすることで、上記封止層と上記対向電極との屈折率差を0.4以下とすることができる。なお、封止層中に無機フィラーを含有させたり、封止層を構成する樹脂を選択したりする方法に加えて、対向電極の材料を選択する方法を組み合わせることによっても屈折率差を0.4以下とすることができる。 In the perovskite solar cell of the present invention, the refractive index difference between the sealing layer and the counter electrode can be increased by adding an inorganic filler in the sealing layer or selecting a resin constituting the sealing layer. It can be 0.4 or less. In addition to the method of containing an inorganic filler in the sealing layer or selecting the resin constituting the sealing layer, the refractive index difference is set to 0. 0 by combining the method of selecting the material of the counter electrode. 4 or less.

本発明のペロブスカイト太陽電池においては、上記封止層が無機フィラーを含有することが好ましい。
上記封止層に無機フィラーを含有させることによって、封止層と対向電極との屈折率の差が小さくなるため、封止層と対向電極との屈折率の差を0.4以下とすることができる。
In the perovskite solar cell of the present invention, the sealing layer preferably contains an inorganic filler.
By including an inorganic filler in the sealing layer, the difference in refractive index between the sealing layer and the counter electrode is reduced, so that the difference in refractive index between the sealing layer and the counter electrode is 0.4 or less. Can do.

上記無機フィラーとしては特に制限されないが、例えば、TiO、ZrO、WO、Nb5、Ta5、BaTiO等からなる粒子が挙げられる。なかでも、上記無機フィラーは屈折率が2~3であることが好ましく、対向電極との屈折率の差を小さくできることから、TiO又はZrOからなる粒子であることが好ましい。 Is not particularly restricted but includes the inorganic filler, for example, TiO 2, ZrO, WO 3 , Nb 2 O 5, Ta 2 O 5, consisting of BaTiO 3, etc. particles. Among them, the inorganic filler preferably has a refractive index of 2 to 3, and particles made of TiO 2 or ZrO are preferable because the difference in refractive index from the counter electrode can be reduced.

上記無機フィラーは、表面修飾剤により表面修飾されていることが好ましい。上記無機フィラーが表面修飾されていることで、上記無機フィラーの上記封止層を構成する樹脂への分散性を向上させることができ、高透明な封止層を構築することができる。これにより、ペロブスカイト太陽電池の光電変換効率を向上させることができる。
上記表面修飾剤としては、P(リン)、Ti(チタン)、Zr(ジルコニウム)、Al(アルミニウム)及びSi(ケイ素)からなる群より選択される少なくとも1種の元素と、これらの元素に結合した有機基とを含む表面修飾剤が好ましい。なかでも、P、Ti、Zr及びSiからなる群より選択される少なくとも1種の元素と、これらの元素に結合した有機基とを含む表面修飾剤がより好ましい。上記表面修飾剤がAlを含む場合には、Alが上記光電変換層に拡散することで上記有機無機ペロブスカイト化合物が劣化し、ペロブスカイト太陽電池の光電変換効率が低下することがある。
上記表面修飾剤として、具体的には例えば、リン酸エステル(Pを含む)、チタンカップリング剤(Tiを含む)、シランカップリング剤(Siを含む)、ジルコニウムカップリング剤(Zrを含む)等が挙げられる。これらの表面修飾剤は単独で用いられてもよく、2種以上が併用されてもよい。
The inorganic filler is preferably surface-modified with a surface modifier. By the surface modification of the inorganic filler, the dispersibility of the inorganic filler in the resin constituting the sealing layer can be improved, and a highly transparent sealing layer can be constructed. Thereby, the photoelectric conversion efficiency of a perovskite solar cell can be improved.
The surface modifier includes at least one element selected from the group consisting of P (phosphorus), Ti (titanium), Zr (zirconium), Al (aluminum), and Si (silicon), and a bond to these elements A surface modifier containing a modified organic group is preferred. Among these, a surface modifier containing at least one element selected from the group consisting of P, Ti, Zr, and Si and an organic group bonded to these elements is more preferable. When the surface modifier contains Al, the organic / inorganic perovskite compound may be deteriorated by diffusion of Al into the photoelectric conversion layer, and the photoelectric conversion efficiency of the perovskite solar cell may be reduced.
Specific examples of the surface modifier include, for example, phosphate esters (including P), titanium coupling agents (including Ti), silane coupling agents (including Si), and zirconium coupling agents (including Zr). Etc. These surface modifiers may be used independently and 2 or more types may be used together.

上記表面修飾剤における有機基は特に限定されないが、直鎖状の炭化水素鎖を含む基であることが好ましい。
上記有機基の炭素数は特に限定されないが、好ましい下限は8、好ましい上限は22である。上記炭素数が8以上であれば、上記封止層を構成する樹脂や上記封止層の形成時に用いる有機溶媒に対する上記無機フィラーの分散性が向上し、上記封止層の透明性が高くなる。上記炭素数が22以下であれば、上記粒子の表面に上記表面修飾剤が付加しやすくなる。上記炭素数のより好ましい下限は14、より好ましい上限は20である。
Although the organic group in the said surface modifier is not specifically limited, It is preferable that it is group containing a linear hydrocarbon chain.
Although carbon number of the said organic group is not specifically limited, A preferable minimum is 8 and a preferable upper limit is 22. If the number of carbon atoms is 8 or more, the dispersibility of the inorganic filler in the resin constituting the sealing layer and the organic solvent used in forming the sealing layer is improved, and the transparency of the sealing layer is increased. . When the carbon number is 22 or less, the surface modifier is easily added to the surface of the particles. The more preferable lower limit of the carbon number is 14, and the more preferable upper limit is 20.

上記無機フィラーの平均粒子径は1μm以下であることが好ましい。無機フィラーの平均粒子径を1μm以下とすることで封止層の透明性を損なうことなく無機フィラーを分散させることができる。上記無機フィラーのより好ましい平均粒子径は100nm以下、更に好ましい平均粒子径は50nm以下である。上記無機フィラーの平均粒子径の下限については特に限定されないが、実質的に1nm程度が限度である。
ここで、平均粒子径とは平均一次粒子径のことを指す。平均粒子径は透過型電子顕微鏡によって測定することができる。
The average particle diameter of the inorganic filler is preferably 1 μm or less. By setting the average particle size of the inorganic filler to 1 μm or less, the inorganic filler can be dispersed without impairing the transparency of the sealing layer. A more preferable average particle size of the inorganic filler is 100 nm or less, and a more preferable average particle size is 50 nm or less. The lower limit of the average particle diameter of the inorganic filler is not particularly limited, but is substantially about 1 nm.
Here, the average particle diameter refers to the average primary particle diameter. The average particle diameter can be measured with a transmission electron microscope.

上記封止層中の上記無機フィラーの含有量の好ましい下限は50重量%、好ましい上限は95重量%である。上記無機フィラーが50重量%以上であることで、効果的に封止層の屈折率を向上させることができる。上記無機フィラーの含有量が95重量%以下であることで、封止層が上記対向電極の屈折率を大幅に越えることを防ぐことができる。上記封止層中における上記無機フィラーの含有量のより好ましい下限は70重量%、より好ましい上限は90重量%である。 The minimum with preferable content of the said inorganic filler in the said sealing layer is 50 weight%, and a preferable upper limit is 95 weight%. The refractive index of a sealing layer can be improved effectively because the said inorganic filler is 50 weight% or more. When the content of the inorganic filler is 95% by weight or less, the sealing layer can be prevented from significantly exceeding the refractive index of the counter electrode. The minimum with more preferable content of the said inorganic filler in the said sealing layer is 70 weight%, and a more preferable upper limit is 90 weight%.

上記封止層を構成する封止剤は、樹脂であることが好ましく、例えば、熱可塑性樹脂や熱硬化性樹脂、光硬化性樹脂等が挙げられる。これらの樹脂の屈折率は特に限定されないが、通常1.42~1.60程度である。上記熱可塑性樹脂として、例えば、ブチルゴム、ポリエステル、ポリウレタン、ポリエチレン、ポリプロピレン、ポリ塩化ビニル、ポリスチレン、ポリビニルアルコール、ポリ酢酸ビニル、ABS樹脂、ポリブタジエン、ポリアミド、ポリカーボネート、ポリイミド、ポリイソブチレン、シクロオレフィン樹脂等が挙げられる。上記熱硬化性樹脂として、例えば、エポキシ樹脂、アクリル樹脂、シリコーン樹脂、フェノール樹脂、メラミン樹脂、ユリア樹脂等が挙げられる。上記光硬化性樹脂として、例えば、エポキシ樹脂、アクリル樹脂、アリルフタレート樹脂、ビニル樹脂、エン-チオール樹脂等が挙げられる。なかでも、透明性やバリア性の観点からアクリル樹脂が好ましい。
なお、上記無機フィラーの分散性を向上させて高透明な封止層を構築する観点からは、比較的極性の高い樹脂が好ましい。一方、上記有機無機ペロブスカイト化合物の劣化を抑制する観点からは、比較的極性の低い樹脂が好ましい。比較的極性の低い樹脂であれば、封止時に上記有機無機ペロブスカイト化合物中の有機成分が上記封止層に溶出することを抑制することができ、その結果、上記有機無機ペロブスカイト化合物が劣化することを抑制することができる。このような上記無機フィラーの分散性と上記有機無機ペロブスカイト化合物の劣化抑制とを両立する観点からも、適切な極性に調整できることから、アクリル樹脂が好ましい。
The sealing agent constituting the sealing layer is preferably a resin, and examples thereof include a thermoplastic resin, a thermosetting resin, and a photocurable resin. The refractive index of these resins is not particularly limited, but is usually about 1.42 to 1.60. Examples of the thermoplastic resin include butyl rubber, polyester, polyurethane, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polyvinyl alcohol, polyvinyl acetate, ABS resin, polybutadiene, polyamide, polycarbonate, polyimide, polyisobutylene, and cycloolefin resin. Can be mentioned. As said thermosetting resin, an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a melamine resin, a urea resin etc. are mentioned, for example. Examples of the photocurable resin include an epoxy resin, an acrylic resin, an allyl phthalate resin, a vinyl resin, and an ene-thiol resin. Of these, acrylic resins are preferred from the viewpoints of transparency and barrier properties.
In addition, from the viewpoint of improving the dispersibility of the inorganic filler and constructing a highly transparent sealing layer, a resin having a relatively high polarity is preferable. On the other hand, from the viewpoint of suppressing deterioration of the organic / inorganic perovskite compound, a resin having a relatively low polarity is preferable. If the resin has a relatively low polarity, it is possible to suppress the organic component in the organic / inorganic perovskite compound from eluting into the sealing layer at the time of sealing, and as a result, the organic / inorganic perovskite compound is deteriorated. Can be suppressed. An acrylic resin is preferable because it can be adjusted to an appropriate polarity from the viewpoint of achieving both the dispersibility of the inorganic filler and the suppression of deterioration of the organic / inorganic perovskite compound.

上記アクリル樹脂を構成するモノマーとしては、例えば、直鎖状骨格を有するモノマー、環状骨格を有するモノマー等が挙げられる。なかでも、屈折率向上の容易性の観点から、環状骨格を有するモノマーが好ましく、脂環式骨格、芳香族炭化水素骨格を有するモノマーがより好ましく、分子の繰り返し単位中に含まれる脂環式骨格、芳香族炭化水素骨格の炭素数が6~12であるモノマーが更に好ましい。
上記分子の繰り返し単位中に含まれる芳香族炭化水素骨格の炭素数が6~12であるモノマーとしては、ベンジル(メタ)アクリレート、フェニル(メタ)アクリレート、ビスフェノールAジ(メタ)アクリレート等が挙げられる。上記分子の繰り返し単位中に含まれる脂環式骨格の炭素数が6~12であるモノマーとしては、ノルボニル(メタ)アクリレート、イソボルニル(メタ)アクリレート、アダマンチル(メタ)アクリレート、シクロヘキシル(メタ)アクリレート、ジシクロペンタジエニル(メタ)アクリレート、ジシクロヘキシル(メタ)アクリレート、ジシクロペンタニル(メタ)アクリレート、ジシクロペンテニルオキシエチル(メタ)アクリレート等が挙げられる。
Examples of the monomer constituting the acrylic resin include a monomer having a linear skeleton and a monomer having a cyclic skeleton. Among these, from the viewpoint of ease of improving the refractive index, a monomer having a cyclic skeleton is preferable, an alicyclic skeleton and a monomer having an aromatic hydrocarbon skeleton are more preferable, and the alicyclic skeleton contained in the repeating unit of the molecule. A monomer having 6 to 12 carbon atoms in the aromatic hydrocarbon skeleton is more preferable.
Examples of the monomer having 6 to 12 carbon atoms of the aromatic hydrocarbon skeleton contained in the repeating unit of the molecule include benzyl (meth) acrylate, phenyl (meth) acrylate, and bisphenol A di (meth) acrylate. . Examples of the monomer having 6 to 12 carbon atoms in the alicyclic skeleton contained in the repeating unit of the molecule include norbornyl (meth) acrylate, isobornyl (meth) acrylate, adamantyl (meth) acrylate, cyclohexyl (meth) acrylate, Examples include dicyclopentadienyl (meth) acrylate, dicyclohexyl (meth) acrylate, dicyclopentanyl (meth) acrylate, and dicyclopentenyloxyethyl (meth) acrylate.

上記アクリル樹脂は、分子中のC原子/O原子が4以上であることが好ましい。上記C原子/O原子が4以上であれば、上記アクリル樹脂が比較的極性の低い樹脂となり、封止時に上記有機無機ペロブスカイト化合物中の有機成分が上記封止層に溶出することにより上記有機無機ペロブスカイト化合物が劣化することを抑制することができる。また、上記C原子/O原子が4以上であれば、経時での分子拡散が抑えられ、ペロブスカイト太陽電池の耐熱耐久性が向上する。上記C原子/O原子は5以上であることがより好ましく、6以上であることが更に好ましい。
上記アクリル樹脂の溶剤溶解性の観点から、上記C原子/O原子は30以下であることが好ましく、20以下であることがより好ましい。
なお、アクリル樹脂の分子中のC原子/O原子の値は、例えば、有機微量元素分析装置(例えば、Perkin Elmer社製、2400II)を用いたCHN/O元素分析や、NMR装置(例えば、JEOL社製、ECA II)を用いた溶液NMR等により測定することができる。
The acrylic resin preferably has 4 or more C atoms / O atoms in the molecule. If the C atom / O atom is 4 or more, the acrylic resin becomes a resin having a relatively low polarity, and the organic component in the organic / inorganic perovskite compound is eluted into the sealing layer at the time of sealing. It can suppress that a perovskite compound deteriorates. Further, when the C atom / O atom is 4 or more, molecular diffusion over time is suppressed, and the heat resistance durability of the perovskite solar cell is improved. The C atom / O atom is more preferably 5 or more, and still more preferably 6 or more.
From the viewpoint of solvent solubility of the acrylic resin, the C atom / O atom is preferably 30 or less, and more preferably 20 or less.
In addition, the value of C atom / O atom in the molecule | numerator of an acrylic resin is the CHN / O elemental analysis using an organic trace element analyzer (For example, Perkin Elmer 2400II), NMR apparatus (For example, JEOL). It can be measured by solution NMR using ECA II).

上記アクリル樹脂の分子中のC原子/O原子の値は、上記アクリル樹脂を構成するモノマーの種類及び組成を調整することにより容易に制御できる。
具体的には例えば、分子中のC原子/O原子が4以上であるモノマーを単独重合又は共重合することにより、分子中のC原子/O原子が4以上であるアクリル樹脂を得ることができる。
上記分子中のC原子/O原子が4以上であるモノマーとしては、例えば、エチルヘキシル(メタ)アクリレート、ラウリル(メタ)アクリレート、ステアリル(メタ)アクリレート等の炭素数8以上のアルキル基を有する(メタ)アルキルアクリレートが挙げられる。また、フェニル(メタ)アクリレート、ナフチル(メタ)アクリレート等の芳香族炭化水素骨格を有する(メタ)アクリレートが挙げられる。また、イソボルニル(メタ)アクリレート、ノルボルニル(メタ)アクリレート、アダマンチル(メタ)アクリレート、シクロヘキシル(メタ)アクリレート等の脂環式骨格を有する(メタ)アクリレートが挙げられる。更に、ヒドロキシルエチルヘキシル(メタ)アクリレート等の反応性官能基を付加できる基(例えば、水酸基、カルボキシル基、エポキシ基等)を有する(メタ)アクリレート等が挙げられる。これらのモノマーは単独で用いられてもよく、2種以上が併用されてもよい。なかでも、炭素数8以上のアルキル基を有する(メタ)アルキルアクリレート、脂環式骨格を有する(メタ)アクリレート、反応性官能基を付加できる基(例えば、水酸基、カルボキシル基、エポキシ基等)を有する(メタ)アクリレート等が好ましく、脂環式骨格を有する(メタ)アクリレートが好適である。
The value of C atom / O atom in the molecule of the acrylic resin can be easily controlled by adjusting the kind and composition of the monomer constituting the acrylic resin.
Specifically, for example, an acrylic resin having 4 or more C atoms / O atoms can be obtained by homopolymerizing or copolymerizing a monomer having 4 or more C atoms / O atoms in the molecule. .
Examples of the monomer having 4 or more C atoms / O atoms in the molecule include an alkyl group having 8 or more carbon atoms such as ethylhexyl (meth) acrylate, lauryl (meth) acrylate, stearyl (meth) acrylate (meta) ) Alkyl acrylate. Moreover, (meth) acrylate which has aromatic hydrocarbon frame | skeletons, such as a phenyl (meth) acrylate and a naphthyl (meth) acrylate, is mentioned. Moreover, (meth) acrylates having an alicyclic skeleton such as isobornyl (meth) acrylate, norbornyl (meth) acrylate, adamantyl (meth) acrylate, cyclohexyl (meth) acrylate, and the like can be given. Furthermore, (meth) acrylate etc. which have groups (for example, a hydroxyl group, a carboxyl group, an epoxy group, etc.) which can add reactive functional groups, such as hydroxyl ethyl hexyl (meth) acrylate, are mentioned. These monomers may be used independently and 2 or more types may be used together. Among them, (meth) alkyl acrylate having an alkyl group having 8 or more carbon atoms, (meth) acrylate having an alicyclic skeleton, and a group to which a reactive functional group can be added (for example, a hydroxyl group, a carboxyl group, an epoxy group, etc.) The (meth) acrylate etc. which have are preferable, and the (meth) acrylate which has alicyclic skeleton is suitable.

また、上記アクリル樹脂は、反応性官能基を有する共重合体を製膜した後、上記反応性官能基を架橋剤により架橋反応させた樹脂であってもよい。この場合、上記反応性官能基の数を調整することにより、架橋反応に伴う硬化収縮によるペロブスカイト太陽電池の封止時の劣化(初期劣化)を抑制することができ、また、スパッタリング耐性を向上させることができる。上記反応性官能基として、例えば、エポキシ基、水酸基、カルボキシル基、アルケニル基、イソシアネート基等が挙げられる。
上記架橋剤は特に限定されず、触媒等を用いて上記反応性官能基の架橋反応を開始させることができる。
また、上記アクリル樹脂は、上記モノマーをモノマーのままで製膜した後、熱又はUV等で上記モノマーを架橋又は重合させた樹脂であってもよい。
The acrylic resin may be a resin obtained by forming a copolymer having a reactive functional group and then crosslinking the reactive functional group with a crosslinking agent. In this case, by adjusting the number of the reactive functional groups, deterioration (initial deterioration) at the time of sealing the perovskite solar cell due to curing shrinkage accompanying the crosslinking reaction can be suppressed, and the sputtering resistance can be improved. be able to. As said reactive functional group, an epoxy group, a hydroxyl group, a carboxyl group, an alkenyl group, an isocyanate group etc. are mentioned, for example.
The said crosslinking agent is not specifically limited, The crosslinking reaction of the said reactive functional group can be started using a catalyst etc.
The acrylic resin may be a resin obtained by forming a film of the monomer as it is and then crosslinking or polymerizing the monomer with heat or UV.

上記アクリル樹脂は、溶解パラメータ(SP値)の好ましい下限が7.0、好ましい上限が10.0である。上記SP値が7.0以上であれば、樹脂の選択肢が広がり、成型が容易となる。上記SP値が10.0以下であれば、封止時に上記有機無機ペロブスカイト化合物中の有機成分が上記封止層に溶出することにより上記有機無機ペロブスカイト化合物が劣化することを抑制することができる。上記SP値のより好ましい下限は7.5、更に好ましい下限は8.0である。ペロブスカイト太陽電池の高温耐久性を高める観点からは、上記SP値のより好ましい上限は9.5、更に好ましい上限は9.0である。 The acrylic resin has a preferable lower limit of the solubility parameter (SP value) of 7.0 and a preferable upper limit of 10.0. If the SP value is 7.0 or more, the range of resin options is widened and molding becomes easy. When the SP value is 10.0 or less, it is possible to suppress deterioration of the organic / inorganic perovskite compound by elution of the organic component in the organic / inorganic perovskite compound into the sealing layer at the time of sealing. The more preferable lower limit of the SP value is 7.5, and the more preferable lower limit is 8.0. From the viewpoint of enhancing the high temperature durability of the perovskite solar cell, the upper limit of the SP value is more preferably 9.5, and still more preferably 9.0.

なお、SP値は溶解性パラメータ(Solubility Parameter)と呼ばれ、溶解のしやすさを表すことのできる指標である。本明細書においてSP値の算出にはFedorsにより提案された方法(R.F.Fedors,Polym.Eng.Sci.,14(2),147-154(1974))を用いる。SP値は、繰り返し単位内の各原子団に対する蒸発エネルギー(Δecoh)(cal/mol)及びモル体積(Δv)(cm/mol)から下記式(1)に従って計算することができる。式(1)中、δがSP値(cal/mol)1/2を表す。 The SP value is called a solubility parameter, and is an index that can express the ease of dissolution. In this specification, the method proposed by Fedors (R. F. Fedors, Polym. Eng. Sci., 14 (2), 147-154 (1974)) is used to calculate the SP value. The SP value can be calculated according to the following formula (1) from the evaporation energy (Δecoh) (cal / mol) and the molar volume (Δv) (cm 3 / mol) for each atomic group in the repeating unit. In formula (1), δ represents an SP value (cal / mol) 1/2 .

Figure JPOXMLDOC01-appb-M000001
Figure JPOXMLDOC01-appb-M000001

Δecoh及びΔvとしては、J.Brandrupら、「Polymer Handbook, Fourth Edition」,volume2に記載の値を用いることができる。
また、Tg≧25℃の場合、主鎖骨格原子数をnとして、n≧3の時は2n、n<3の時は4nをΔvに加えて計算する。
As Δecoh and Δv, J.H. The values described in Brandrup et al., “Polymer Handbook, Fourth Edition”, volume 2 can be used.
When Tg ≧ 25 ° C., the number of main chain skeleton atoms is n, and 2n is calculated when n ≧ 3, and 4n is added to Δv when n <3.

共重合体のSP値は、共重合体中のそれぞれの繰り返し単位単独でのSP値を算出し、その体積分率を使って下記式(2)により計算することができる。式(2)中、δcopは共重合体のSP値を表し、φ1、φ2は繰り返し単位1、2の体積分率を表し、δ1、δ2は繰り返し単位1、2単独のSP値を表す。 The SP value of the copolymer can be calculated by the following formula (2) by calculating the SP value of each repeating unit alone in the copolymer and using the volume fraction thereof. In the formula (2), δcop represents the SP value of the copolymer, φ1, φ2 represents the volume fraction of the repeating units 1 and 2, and δ1, δ2 represents the SP value of the repeating units 1 and 2 alone.

Figure JPOXMLDOC01-appb-M000002
Figure JPOXMLDOC01-appb-M000002

上記封止層が上記無機フィラーを含有しない場合には、上述したように、本発明のペロブスカイト太陽電池においては、封止層と対向電極との屈折率差が0.4以下であるため、上記封止層を構成する樹脂の屈折率は、1.6~2.0であることが好ましい。このような屈折率を持つ樹脂としては、例えば、エポキシ樹脂、アクリル樹脂、シリコーン樹脂、フェノール樹脂等が挙げられる。なかでも、上記封止層は、芳香族骨格を有する樹脂を含有することが好ましい。即ち、上記封止層は、芳香族骨格を有する樹脂を含有し、上記芳香族骨格を有する樹脂の屈折率が1.6~2.0であることが好ましい。このような芳香族骨格としてはトリアジン骨格樹脂、フルオレン骨格樹脂、ナフタレン骨格樹脂、ビフェニル骨格樹脂、フルオレン骨格樹脂等が挙げられる。 When the sealing layer does not contain the inorganic filler, as described above, in the perovskite solar cell of the present invention, the refractive index difference between the sealing layer and the counter electrode is 0.4 or less. The refractive index of the resin constituting the sealing layer is preferably 1.6 to 2.0. Examples of the resin having such a refractive index include an epoxy resin, an acrylic resin, a silicone resin, and a phenol resin. Especially, it is preferable that the said sealing layer contains resin which has an aromatic skeleton. That is, the sealing layer preferably contains a resin having an aromatic skeleton, and the refractive index of the resin having an aromatic skeleton is 1.6 to 2.0. Examples of such aromatic skeletons include triazine skeleton resins, fluorene skeleton resins, naphthalene skeleton resins, biphenyl skeleton resins, and fluorene skeleton resins.

上記封止層を構成する樹脂は分子量が100000~1000000であることが好ましい。分子量が100000以上であることで、上記無機層製膜時のダメージを抑えることができ、透明性が向上する。分子量が1000000以下であることで、上記無機層の定着性が向上する。 The resin constituting the sealing layer preferably has a molecular weight of 100,000 to 1,000,000. When the molecular weight is 100,000 or more, damage during the inorganic layer deposition can be suppressed, and transparency is improved. When the molecular weight is 1000000 or less, the fixability of the inorganic layer is improved.

上記封止層の厚みは、好ましい下限が100nm、好ましい上限が100000nmである。上記厚みが100nm以上であれば、上記封止層によって上記対向電極上を充分に覆いつくすことができる。上記厚みが100000nm以下であれば、上記封止層の側面から浸入してくる水蒸気を充分にブロックすることができる。上記厚みのより好ましい下限は500nm、より好ましい上限は50000nmであり、更に好ましい下限は1000nm、更に好ましい上限は2000nmである。 The preferable lower limit of the thickness of the sealing layer is 100 nm, and the preferable upper limit is 100,000 nm. When the thickness is 100 nm or more, the counter electrode can be sufficiently covered by the sealing layer. When the thickness is 100000 nm or less, water vapor entering from the side surface of the sealing layer can be sufficiently blocked. The more preferable lower limit of the thickness is 500 nm, the more preferable upper limit is 50000 nm, the still more preferable lower limit is 1000 nm, and the still more preferable upper limit is 2000 nm.

本発明のペロブスカイト太陽電池は、更に、上記封止層の外側を封止する無機層を有することが好ましい。これにより、上記無機層が水蒸気バリア性能を発揮し、水分が上記封止層の内部に浸透することを抑制できるため、ペロブスカイト太陽電池の耐久性をより向上させることができる。また、上記対向電極上に無機層を形成するのではなく、上記封止層上に無機層を形成することで、上記封止層が対向電極表面の凹凸を埋めて平坦化する役割を果たすため、無機層をより接着しやすくすることができる。 The perovskite solar cell of the present invention preferably further has an inorganic layer that seals the outside of the sealing layer. Thereby, since the said inorganic layer exhibits water vapor | steam barrier performance and it can suppress that a water | moisture content osmose | permeates the inside of the said sealing layer, durability of a perovskite solar cell can be improved more. In addition, since the inorganic layer is formed on the sealing layer instead of forming the inorganic layer on the counter electrode, the sealing layer plays a role of filling and flattening the unevenness on the surface of the counter electrode. The inorganic layer can be more easily adhered.

上記無機層は、金属酸化物、金属窒化物又は金属酸窒化物を含むことが好ましい。上記金属酸化物、金属窒化物又は金属酸窒化物は、水蒸気バリア性を有するものであれば特に限定されないが、例えば、Si、Al、Zn、Sn、In、Ti、Mg、Zr、Ni、Ta、W、Cu若しくはこれらを2種以上含む合金の酸化物、窒化物又は酸窒化物が挙げられる。なかでも、上記無機層に水蒸気バリア性及び柔軟性を付与するために、Zn、Snの両金属元素を含む金属元素の酸化物、窒化物又は酸窒化物が好ましい。 The inorganic layer preferably contains a metal oxide, a metal nitride, or a metal oxynitride. The metal oxide, metal nitride or metal oxynitride is not particularly limited as long as it has a water vapor barrier property. For example, Si, Al, Zn, Sn, In, Ti, Mg, Zr, Ni, Ta , W, Cu, or an oxide, nitride, or oxynitride of an alloy containing two or more of these. Among these, in order to impart water vapor barrier property and flexibility to the inorganic layer, an oxide, nitride or oxynitride of a metal element containing both metal elements of Zn and Sn is preferable.

なかでも、上記金属酸化物、金属窒化物又は金属酸窒化物は、一般式ZnSnで表される金属酸化物(ZTO)であることが特に好ましい。上記無機層に上記一般式ZnSnで表される金属酸化物を用いることにより、上記金属酸化物がスズ(Sn)原子を含むため、上記無機層に適度な可撓性を付与することができ、上記無機層の厚みが増した場合であっても応力が小さくなるため、上記無機層、電極、半導体層等の剥離を抑えることができる。これにより、上記無機層の水蒸気バリア性を高め、ペロブスカイト太陽電池の耐久性をより向上させることができる。 Among them, the metal oxide, metal nitride or metal oxynitride is particularly preferably a general formula Zn a Sn b O c metal oxide represented by (ZTO). By using the metal oxide represented by the general formula Zn a Sn b O c for the inorganic layer, the metal oxide contains tin (Sn) atoms, and thus gives the inorganic layer appropriate flexibility. Even when the thickness of the inorganic layer is increased, the stress is reduced, so that peeling of the inorganic layer, the electrode, the semiconductor layer, and the like can be suppressed. Thereby, the water vapor | steam barrier property of the said inorganic layer can be improved, and durability of a perovskite solar cell can be improved more.

上記一般式ZnSnで表される金属酸化物においては、ZnとSnとの総和に対するSnの比Xs(重量%)が70>Xs>0を満たすことが好ましい。
なお、上記無機層中の上記一般式ZnSnで表される金属酸化物に含まれる亜鉛(Zn)、スズ(Sn)及び酸素(O)の元素比率は、X線光電子分光(XPS)表面分析装置(例えば、VGサイエンティフィックス社製のESCALAB-200R等)を用いて測定することができる。
In the metal oxide represented by the above general formula Zn a Sn b O c , it is preferable that the ratio Xs (wt%) of Sn to the sum of Zn and Sn satisfies 70>Xs> 0.
The element ratio of zinc (Zn), tin (Sn), and oxygen (O) contained in the metal oxide represented by the general formula Zn a Sn b O c in the inorganic layer is determined by X-ray photoelectron spectroscopy ( It can be measured using an XPS) surface analyzer (for example, ESCALAB-200R manufactured by VG Scientific).

上記無機層は、上記一般式ZnSnで表される金属酸化物を含む場合、更に、ケイ素(Si)及び/又はアルミニウム(Al)を含むことが好ましい。
上記無機層にケイ素(Si)及び/又はアルミニウム(Al)を添加することにより、上記無機層の透明性を高め、ペロブスカイト太陽電池の光電変換効率を向上させることができる。
The inorganic layer, when containing a metal oxide represented by the general formula Zn a Sn b O c, preferably further contains silicon (Si) and / or aluminum (Al).
By adding silicon (Si) and / or aluminum (Al) to the inorganic layer, the transparency of the inorganic layer can be increased and the photoelectric conversion efficiency of the perovskite solar cell can be improved.

上記無機層は屈折率が上記対向電極と近いことが好ましい。上記無機層の屈折率が上記対向電極の屈折率と近い場合、上記封止層の屈折率を調節することで上記対向電極と上記封止層との屈折率差だけでなく、上記無機層と上記封止層の屈折率差も小さくなるため、上記無機層と上記封止層との界面における光の反射を抑えることができ、光電変換効率を高めることができる。 The inorganic layer preferably has a refractive index close to that of the counter electrode. When the refractive index of the inorganic layer is close to the refractive index of the counter electrode, not only the refractive index difference between the counter electrode and the sealing layer but also the inorganic layer by adjusting the refractive index of the sealing layer. Since the refractive index difference of the sealing layer is also reduced, reflection of light at the interface between the inorganic layer and the sealing layer can be suppressed, and the photoelectric conversion efficiency can be increased.

上記無機層の厚みは、好ましい下限が30nm、好ましい上限が3000nmである。上記厚みが30nm以上であれば、上記無機層が充分な水蒸気バリア性を有することができ、ペロブスカイト太陽電池の耐久性が向上する。上記厚みが3000nm以下であれば、上記無機層の厚みが増した場合であっても、発生する応力が小さいため、上記無機層、電極、半導体層等の剥離を抑制することができる。上記厚みのより好ましい下限は50nm、より好ましい上限は1000nmであり、更に好ましい下限は100nm、更に好ましい上限は500nmである。
なお、上記無機層の厚みは、光学干渉式膜厚測定装置(例えば、大塚電子社製のFE-3000等)を用いて測定することができる。
The preferable lower limit of the thickness of the inorganic layer is 30 nm, and the preferable upper limit is 3000 nm. If the said thickness is 30 nm or more, the said inorganic layer can have sufficient water vapor | steam barrier property, and durability of a perovskite solar cell will improve. When the thickness is 3000 nm or less, even if the thickness of the inorganic layer is increased, the generated stress is small, and thus the peeling of the inorganic layer, the electrode, the semiconductor layer, and the like can be suppressed. The more preferable lower limit of the thickness is 50 nm, the more preferable upper limit is 1000 nm, the still more preferable lower limit is 100 nm, and the still more preferable upper limit is 500 nm.
The thickness of the inorganic layer can be measured using an optical interference film thickness measuring device (for example, FE-3000 manufactured by Otsuka Electronics Co., Ltd.).

図2は、本発明のペロブスカイト太陽電池の一例を模式的に示す断面図である。
図2に示すペロブスカイト太陽電池1は、基板7上に電極2と、対向電極3と、この電極2と対向電極3との間に配置された光電変換層4とを有し、対向電極3上に封止層5が配置され、封止層5上に無機層6が配置されたものである。なお、図2に示すペロブスカイト太陽電池1において、対向電極3はパターニングされた電極である。
FIG. 2 is a cross-sectional view schematically showing an example of the perovskite solar cell of the present invention.
The perovskite solar cell 1 shown in FIG. 2 has an electrode 2, a counter electrode 3, and a photoelectric conversion layer 4 disposed between the electrode 2 and the counter electrode 3 on a substrate 7. The sealing layer 5 is arrange | positioned by this, and the inorganic layer 6 is arrange | positioned on the sealing layer 5. FIG. In the perovskite solar cell 1 shown in FIG. 2, the counter electrode 3 is a patterned electrode.

本発明のペロブスカイト太陽電池を製造する方法は特に限定されず、例えば、上記基板上に上記電極、上記光電変換層、上記対向電極をこの順で形成した後、上記対向電極上に上記封止層を配置し、上記封止層上に上記無機層を配置する方法等が挙げられる。 The method for producing the perovskite solar cell of the present invention is not particularly limited. For example, after forming the electrode, the photoelectric conversion layer, and the counter electrode in this order on the substrate, the sealing layer is formed on the counter electrode. And a method of arranging the inorganic layer on the sealing layer.

上記光電変換層を形成する方法は特に限定されず、真空蒸着法、スパッタリング法、気相反応法(CVD)、電気化学沈積法、印刷法等が挙げられる。なかでも、印刷法を採用することで、高い光電変換効率を発揮できる太陽電池を大面積で簡易に形成することができる。印刷法として、例えば、スピンコート法、キャスト法等が挙げられ、印刷法を用いた方法としてロールtoロール法等が挙げられる。 The method for forming the photoelectric conversion layer is not particularly limited, and examples thereof include a vacuum deposition method, a sputtering method, a gas phase reaction method (CVD), an electrochemical deposition method, and a printing method. Especially, the solar cell which can exhibit high photoelectric conversion efficiency can be simply formed in a large area by employ | adopting the printing method. Examples of the printing method include a spin coating method and a casting method, and examples of a method using the printing method include a roll-to-roll method.

上記対向電極上に上記封止層を配置する方法は特に限定されず、例えば、シート状の封止層を用いて上記対向電極上をシールする方法、封止層を構成する樹脂を有機溶媒に溶解させた樹脂溶液を上記対向電極上に塗布する方法等が挙げられる。また、封止層となる液状モノマーを上記対向電極上に塗布した後、熱又はUV等で液状モノマーを重合させる方法、封止層に熱をかけて融解させた後に冷却する方法等が挙げられる。 The method of disposing the sealing layer on the counter electrode is not particularly limited. For example, a method of sealing the counter electrode using a sheet-shaped sealing layer, and a resin constituting the sealing layer as an organic solvent. The method etc. which apply | coat the dissolved resin solution on the said counter electrode are mentioned. In addition, a method of polymerizing a liquid monomer with heat or UV after applying a liquid monomer to be a sealing layer on the counter electrode, a method of cooling after melting the sealing layer with heat, and the like can be mentioned. .

上記封止層上に上記無機層を配置する方法として、真空蒸着法、スパッタリング法、気相反応法(CVD)、イオンプレーティング法が好ましい。なかでも、緻密な層を形成するためにはスパッタリング法がより好ましく、スパッタリング法のなかでもDCマグネトロンスパッタリング法が更に好ましい。上記スパッタリング法においては、金属ターゲット、及び、酸素ガス又は窒素ガスを原料とし、上記封止層上に原料を堆積して製膜することにより、無機層を形成することができる。 As a method of disposing the inorganic layer on the sealing layer, a vacuum deposition method, a sputtering method, a gas phase reaction method (CVD), or an ion plating method is preferable. Among these, the sputtering method is more preferable for forming a dense layer, and the DC magnetron sputtering method is more preferable among the sputtering methods. In the sputtering method, an inorganic layer can be formed by using a metal target and oxygen gas or nitrogen gas as raw materials and depositing the raw material on the sealing layer to form a film.

本発明によれば、光電変換効率が高いペロブスカイト太陽電池を提供することができる。 According to the present invention, a perovskite solar cell with high photoelectric conversion efficiency can be provided.

有機無機ペロブスカイト化合物の結晶構造の一例を示す模式図である。It is a schematic diagram which shows an example of the crystal structure of an organic inorganic perovskite compound. 本発明のペロブスカイト太陽電池の一例を模式的に示す断面図である。It is sectional drawing which shows typically an example of the perovskite solar cell of this invention.

以下に実施例を掲げて本発明を更に詳しく説明するが、本発明はこれら実施例のみに限定されない。 Hereinafter, the present invention will be described in more detail with reference to examples. However, the present invention is not limited to these examples.

(実施例1)
(1)電極/電子輸送層/光電変換層/ホール輸送層/対向電極が積層された積層体の作製
ガラス基板上に、電極として厚み1000nmのFTO膜を形成し、純水、アセトン、メタノールをこの順に用いて各10分間超音波洗浄した後、乾燥させた。
FTO膜の表面上に、2%に調整したチタンイソプロポキシドエタノール溶液をスピンコート法により塗布した後、400℃で10分間焼成し、厚み20nmの薄膜状の電子輸送層を形成した。更に、薄膜状の電子輸送層上に、有機バインダとしてのポリイソブチルメタクリレートと酸化チタン(平均粒子径10nmと30nmとの混合物)とを含有する酸化チタンペーストをスピンコート法により塗布した後、500℃で10分間焼成し、厚み500nmの多孔質状の電子輸送層を形成した。
次いで、光電変換層形成用溶液として、N,N-ジメチルホルムアミド(DMF)を溶媒としてCHNHIとPbClをモル比3:1で溶かし、CHNHIとPbClの合計重量濃度を20%に調製した。この溶液を電子輸送層上にスピンコート法によって積層した。更に、ホール輸送層としてPoly(4-butylphenyl-diphenyl-amine)(1-Material社製)の1重量%クロロベンゼン溶液を有機無機ペロブスカイト化合物部位上にスピンコート法によって50nmの厚みに積層した。
ホール輸送層上に、対向電極として真空蒸着により厚み100nmのITO膜を形成し、電極/電子輸送層/光電変換層/ホール輸送層/対向電極が積層された積層体を得た。
Example 1
(1) Fabrication of laminated body in which electrode / electron transport layer / photoelectric conversion layer / hole transport layer / counter electrode are laminated On a glass substrate, an FTO film having a thickness of 1000 nm is formed as an electrode, and pure water, acetone, and methanol are added. Using this order, each was subjected to ultrasonic cleaning for 10 minutes and then dried.
A titanium isopropoxide ethanol solution adjusted to 2% was applied on the surface of the FTO film by a spin coating method, followed by baking at 400 ° C. for 10 minutes to form a thin-film electron transport layer having a thickness of 20 nm. Further, a titanium oxide paste containing polyisobutyl methacrylate as an organic binder and titanium oxide (a mixture of an average particle size of 10 nm and 30 nm) is applied onto the thin film electron transport layer by a spin coat method, and then heated to 500 ° C. Was fired for 10 minutes to form a porous electron transport layer having a thickness of 500 nm.
Next, CH 3 NH 3 I and PbCl 2 were dissolved at a molar ratio of 3: 1 using N, N-dimethylformamide (DMF) as a solvent as a photoelectric conversion layer forming solution, and the total weight of CH 3 NH 3 I and PbCl 2 The concentration was adjusted to 20%. This solution was laminated on the electron transport layer by spin coating. Further, a 1% by weight chlorobenzene solution of Poly (4-butylphenyl-diphenyl-amine) (manufactured by 1-Material) was laminated as a hole transport layer on the organic / inorganic perovskite compound site to a thickness of 50 nm by spin coating.
On the hole transport layer, an ITO film having a thickness of 100 nm was formed as a counter electrode by vacuum vapor deposition to obtain a laminate in which the electrode / electron transport layer / photoelectric conversion layer / hole transport layer / counter electrode were stacked.

(2)封止層の形成
(2-1)アクリル樹脂の合成及びアクリル樹脂溶液の作製
イソボルニルメタクリレート(共栄社化学社製)とヒドロキシエチルアクリレート(共栄社化学社製)をモル比9:1で混合した。次いで触媒としてAIBN(日本ファインケム社製)をヒドロキシエチルアクリレートに対しモル比で0.002等量加え、モノマーが50重量%となるようにシクロヘキサン(和光純薬工業社製)を加え、70℃で12時間加熱撹拌した。加熱攪拌後、2-メタクリロイルオキシエチルイソシアネート(昭和電工社製)をヒドロキシエチルアクリレートに対し、モル比で0.002等量、ジラウリン酸ジブチルスズ(東京化成工業株式会社製)を2-メタクリロイルオキシエチルイソシアネートに対し、300ppm加え、70℃で6時間加熱撹拌した。反応液を放冷後、メタノールに滴下し、析出した固体をろ取した後、減圧乾燥し、分子量200000のアクリル樹脂を得た。
得られたアクリル樹脂をシクロヘキサンに10重量%となるように混合し、アクリル樹脂溶液を得た。
(2-2)無機フィラーの合成及び無機フィラー分散液の作製
酸化チタンナノ粒子のメタノール分散液(堺化学工業社製、SRD-M、平均粒子径:4nm)を、リン酸エステル(オレイルアシッド ホスフェイト、Pを含む、有機基の炭素数=18、SC有機化学社製、Phoslex A-18D)で処理して酸化チタンナノ粒子を表面修飾し、乾燥させ、無機フィラーの粉末を得た。得られた粉末を、シクロへキサンに10重量%になるように分散させ、無機フィラー分散液を得た。
(2-3)封止層の形成
「(2-1)アクリル樹脂の合成及びアクリル樹脂溶液の作製」で得られたアクリル樹脂溶液と「(2-2)無機フィラーの合成及び無機フィラー分散液の作製」で得られた無機フィラー分散液を体積比7:3で混合し、溶質重量に対し、パーヘキシルPVを4重量%加え、無機フィラーの含有量が50重量%の樹脂溶液を得た。得られた樹脂溶液をドクターブレード法で対向電極上に塗工し、100℃、10分ホットプレートにて加熱し、無機フィラーを含有する封止層を形成した。
(2) Formation of sealing layer (2-1) Synthesis of acrylic resin and preparation of acrylic resin solution Isobornyl methacrylate (manufactured by Kyoeisha Chemical Co., Ltd.) and hydroxyethyl acrylate (manufactured by Kyoeisha Chemical Co., Ltd.) in a molar ratio of 9: 1 Mixed. Next, AIBN (manufactured by Nippon Finechem Co., Ltd.) as a catalyst was added in an amount of 0.002 equivalent in molar ratio to hydroxyethyl acrylate, cyclohexane (manufactured by Wako Pure Chemical Industries, Ltd.) was added so that the monomer would be 50% by weight, and 70 ° C. The mixture was heated and stirred for 12 hours. After heating and stirring, 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko KK) in a molar ratio with respect to hydroxyethyl acrylate is 0.002 equivalent, and dibutyltin dilaurate (manufactured by Tokyo Chemical Industry Co., Ltd.) is 2-methacryloyloxyethyl isocyanate. In contrast, 300 ppm was added, and the mixture was heated and stirred at 70 ° C. for 6 hours. The reaction solution was allowed to cool and then added dropwise to methanol. The precipitated solid was collected by filtration and dried under reduced pressure to obtain an acrylic resin having a molecular weight of 200,000.
The obtained acrylic resin was mixed with cyclohexane so that it might become 10 weight%, and the acrylic resin solution was obtained.
(2-2) Synthesis of inorganic filler and preparation of inorganic filler dispersion A methanol dispersion of titanium oxide nanoparticles (manufactured by Sakai Chemical Industry Co., Ltd., SRD-M, average particle diameter: 4 nm) was converted into phosphate ester (oleyl acid phosphate, The titanium oxide nanoparticles were surface-treated by treatment with P containing organic group carbon number = 18, manufactured by SC Organic Chemical Co., Ltd. (Phoslex A-18D), and dried to obtain an inorganic filler powder. The obtained powder was dispersed in cyclohexane so as to be 10% by weight to obtain an inorganic filler dispersion.
(2-3) Formation of sealing layer Acrylic resin solution obtained in “(2-1) Synthesis of acrylic resin and preparation of acrylic resin solution” and “(2-2) Synthesis of inorganic filler and inorganic filler dispersion liquid” The inorganic filler dispersion obtained in “Preparation” was mixed at a volume ratio of 7: 3, and 4% by weight of perhexyl PV was added to the solute weight to obtain a resin solution having an inorganic filler content of 50% by weight. The obtained resin solution was applied onto the counter electrode by the doctor blade method and heated on a hot plate at 100 ° C. for 10 minutes to form a sealing layer containing an inorganic filler.

(3)無機層の形成
封止層を形成したサンプルをスパッタリング装置の基板ホルダーに取り付け、更に、スパッタリング装置のカソードAにZnSn合金(ZTO、Zn:Sn=95:5重量%)ターゲットを、カソードBにSiターゲットを取り付けた。スパッタリング装置の成膜室を真空ポンプにより排気し、5.0×10-4Paまで減圧した。その後、成膜条件Aに示す条件でスパッタリングし、封止層上に無機層としてZnSnO(Si)薄膜を100nm形成し、ペロブスカイト太陽電池を得た。
(成膜条件A)
アルゴンガス流量:50sccm,酸素ガス流量:50sccm
電源出力:カソードA=500W、カソードB=1500W
(3) Formation of inorganic layer The sample on which the sealing layer was formed was attached to the substrate holder of the sputtering apparatus, and a ZnSn alloy (ZTO, Zn: Sn = 95: 5 wt%) target was applied to the cathode A of the sputtering apparatus. A Si target was attached to B. The film formation chamber of the sputtering apparatus was evacuated by a vacuum pump, and the pressure was reduced to 5.0 × 10 −4 Pa. Thereafter, sputtering was performed under the conditions shown in the film formation condition A, and a ZnSnO (Si) thin film was formed as an inorganic layer on the sealing layer to a thickness of 100 nm to obtain a perovskite solar cell.
(Film formation condition A)
Argon gas flow rate: 50 sccm, oxygen gas flow rate: 50 sccm
Power output: Cathode A = 500W, Cathode B = 1500W

(実施例2~12、比較例3)
無機フィラーの種類及びアクリル樹脂溶液と無機フィラー分散液の混合比を変更することで、無機フィラーの含有量を表1に示すように変更したこと以外は実施例1と同様にして、ペロブスカイト太陽電池を得た。
(Examples 2 to 12, Comparative Example 3)
A perovskite solar cell in the same manner as in Example 1 except that the content of the inorganic filler was changed as shown in Table 1 by changing the type of the inorganic filler and the mixing ratio of the acrylic resin solution and the inorganic filler dispersion. Got.

なお、無機フィラーとして酸化ジルコニウムを用いた例では、酸化ジルコニウムナノ粒子メタノール分散液(堺化学工業社製、SZR-M、平均粒子径:3nm)及び表面修飾剤としてのリン酸エステル(Pを含む、有機基の炭素数=18、SC有機化学社製、Phoslex A-18D)を用いた。酸化タングステンを用いた例では、酸化タングステンナノ粒子イソプロパノール分散液(Nanograde AG社製、6040-W、平均粒子径:15nm)及び表面修飾剤としてのリン酸エステル(Pを含む、有機基の炭素数=18、SC有機化学社製、Phoslex A-18D)を用いた。シリカを用いた例では、シリカナノ粒子メタノール分散液(日産化学社製、MA-ST-M、平均粒子径:20nm)及び表面修飾剤としてのリン酸エステル(Pを含む、有機基の炭素数=18、SC有機化学社製、Phoslex A-18D)を用いた。実施例8の酸化チタンを用いた例では、酸化チタンナノ粒子メタノール分散液(堺化学工業社製、R-38L、平均粒子径400nm)及び表面修飾剤としてのリン酸エステル(Pを含む、有機基の炭素数=18、SC有機化学社製、Phoslex A-18D)を用いた。 In the example using zirconium oxide as the inorganic filler, zirconium oxide nanoparticle methanol dispersion (manufactured by Sakai Chemical Industry Co., Ltd., SZR-M, average particle size: 3 nm) and phosphate ester (including P) as a surface modifier. , Organic group carbon number = 18, SC Organic Chemical Co., Ltd., Phoslex A-18D) was used. In the example using tungsten oxide, tungsten oxide nanoparticle isopropanol dispersion (manufactured by Nanograde AG, 6040-W, average particle size: 15 nm) and phosphoric acid ester as a surface modifier (carbon number of organic group including P) = 18, SC Organic Chemical Co., Phoslex A-18D) was used. In an example using silica, a silica nanoparticle methanol dispersion (manufactured by Nissan Chemical Industries, MA-ST-M, average particle size: 20 nm) and a phosphoric acid ester as a surface modifier (the carbon number of the organic group including P = 18, Phoslex A-18D manufactured by SC Organic Chemical Co., Ltd. was used. In the example using titanium oxide of Example 8, titanium oxide nanoparticle methanol dispersion (manufactured by Sakai Chemical Industry Co., Ltd., R-38L, average particle size 400 nm) and phosphate ester (containing P, organic group as surface modifier) Carbon number = 18, manufactured by SC Organic Chemicals, Phoslex A-18D).

更に、下記の表面修飾剤を用いた。
チタンカップリング剤(Tiを含む、有機基の炭素数=18、マツモトファインケミカル社製、オルガチックス TC-800)
アルミニウムカップリング剤(Alを含む、有機基の炭素数=18、味の素ファインテクノ社製、プレンアクトAL-M)
シランカップリング剤(Siを含む、有機基の炭素数=8、信越シリコーン社製、KBM-1083)
ジルコニウムカップリング剤(Zrを含む、有機基の炭素数=18、マツモトファインケミカル社製、オルガチックス ZC-320)
Further, the following surface modifier was used.
Titanium coupling agent (including Ti, organic group carbon number = 18, manufactured by Matsumoto Fine Chemical Co., Ltd., ORGATICS TC-800)
Aluminum coupling agent (including Al, carbon number of organic group = 18, manufactured by Ajinomoto Fine Techno Co., Plenact AL-M)
Silane coupling agent (including Si, organic group carbon number = 8, manufactured by Shin-Etsu Silicone, KBM-1083)
Zirconium coupling agent (including Zr, organic group carbon number = 18, manufactured by Matsumoto Fine Chemical Co., Ltd., ORGATIZ ZC-320)

(実施例13)
(1)電極/電子輸送層/光電変換層/ホール輸送層/対向電極が積層された積層体の作製
実施例1と同様の方法で電極/電子輸送層/光電変換層/ホール輸送層/対向電極が積層された積層体を作製した。 
(Example 13)
(1) Production of laminate in which electrode / electron transport layer / photoelectric conversion layer / hole transport layer / counter electrode are laminated In the same manner as in Example 1, electrode / electron transport layer / photoelectric conversion layer / hole transport layer / opposite A laminate in which electrodes were laminated was produced.

(2)封止層の形成
トリアジン骨格を有する樹脂(日産化学社製、UR-101)をドクターブレード法で対向電極上に塗工し、100℃、10分ホットプレートにて加熱して封止層を形成した。
(2) Formation of sealing layer A resin having a triazine skeleton (Nissan Chemical Co., Ltd., UR-101) was coated on the counter electrode by the doctor blade method, and heated and sealed on a hot plate at 100 ° C for 10 minutes. A layer was formed.

(3)無機層の形成
実施例1と同様の方法で封止層上に無機層を形成した。
(3) Formation of inorganic layer An inorganic layer was formed on the sealing layer in the same manner as in Example 1.

(実施例14、比較例4)
封止層の樹脂の種類を表1の通りに変更したこと以外は実施例13と同様にして、ペロブスカイト太陽電池を得た。なお、樹脂は以下のものを用いた。
OGSOL EA-0200:フルオレン骨格、日産化学社製
TOPAS6017    :シクロオレフィンポリマー、ポリプラスチックス社製
(Example 14, comparative example 4)
A perovskite solar cell was obtained in the same manner as in Example 13 except that the type of resin for the sealing layer was changed as shown in Table 1. The following resin was used.
OGSOL EA-0200: fluorene skeleton, Nissan Chemical Co., Ltd. TOPAS6017: cycloolefin polymer, manufactured by Polyplastics

(比較例1)
(1)電極/電子輸送層/光電変換層/ホール輸送層/対向電極が積層された積層体の作製
実施例1と同様の方法で電極/電子輸送層/光電変換層/ホール輸送層/対向電極が積層された積層体を作製した。 
(Comparative Example 1)
(1) Production of laminate in which electrode / electron transport layer / photoelectric conversion layer / hole transport layer / counter electrode are laminated In the same manner as in Example 1, electrode / electron transport layer / photoelectric conversion layer / hole transport layer / opposite A laminate in which electrodes were laminated was produced.

(2)封止層の形成
(2-1)アクリル樹脂の合成及びアクリル樹脂溶液の作製
実施例と同様の方法でアクリル樹脂を合成し、アクリル樹脂溶液を作製した。
(2-2)封止層の形成
アクリル樹脂溶液の溶質重量に対し、パーヘキシルPVを4重量%加え、得られた樹脂溶液をドクターブレード法で対向電極上に塗工し、100℃、10分で加熱し、対向電極上に封止層を形成した。
(2) Formation of sealing layer (2-1) Synthesis of acrylic resin and preparation of acrylic resin solution An acrylic resin was synthesized in the same manner as in the examples to prepare an acrylic resin solution.
(2-2) Formation of Sealing Layer 4% by weight of perhexyl PV is added to the solute weight of the acrylic resin solution, and the resulting resin solution is applied onto the counter electrode by the doctor blade method, at 100 ° C. for 10 minutes. And a sealing layer was formed on the counter electrode.

(3)無機層の形成
実施例1と同様の方法で封止層上に無機層を形成した。
(3) Formation of inorganic layer An inorganic layer was formed on the sealing layer in the same manner as in Example 1.

(比較例2)
(1)電極/電子輸送層/光電変換層/ホール輸送層/対向電極が積層された積層体の作製
実施例1と同様の方法で電極/電子輸送層/光電変換層/ホール輸送層/対向電極が積層された積層体を作製した。
(Comparative Example 2)
(1) Production of laminate in which electrode / electron transport layer / photoelectric conversion layer / hole transport layer / counter electrode are laminated In the same manner as in Example 1, electrode / electron transport layer / photoelectric conversion layer / hole transport layer / opposite A laminate in which electrodes were laminated was produced.

(2)封止層の形成
フッ化マグネシウム(和光純薬工業社製)を真空蒸着機を用いて蒸着し、対向電極上に100nmの封止層を形成した。
(2) Formation of sealing layer Magnesium fluoride (manufactured by Wako Pure Chemical Industries, Ltd.) was deposited using a vacuum vapor deposition machine to form a 100 nm sealing layer on the counter electrode.

(3)無機層の形成
実施例1と同様の方法で封止層上に無機層を形成した。
(3) Formation of inorganic layer An inorganic layer was formed on the sealing layer in the same manner as in Example 1.

<評価>
実施例及び比較例で得られた対向電極、封止層、無機層及びペロブスカイト太陽電池について、以下の評価を行った。結果を表2に示した。
<Evaluation>
The following evaluation was performed about the counter electrode obtained by the Example and the comparative example, the sealing layer, the inorganic layer, and the perovskite solar cell. The results are shown in Table 2.

(1)屈折率差の測定
自動薄膜計測装置(HORIBA Scientific社製、製品名:Auto SE、レーザー波長632.8nm)を用いて封止層の屈折率(A)、対向電極の屈折率(B)及び無機層の屈折率を測定した。得られた屈折率から屈折率差B-Aを算出した。
(1) Measurement of refractive index difference Using an automatic thin film measuring apparatus (manufactured by HORIBA Scientific, product name: Auto SE, laser wavelength 632.8 nm), the refractive index of the sealing layer (A), the refractive index of the counter electrode (B ) And the refractive index of the inorganic layer. The refractive index difference B−A was calculated from the obtained refractive index.

(2)光電変換効率
太陽電池の電極間に電源(KEITHLEY社製、236モデル)を接続し、強度100mW/cmのソーラーシミュレーション(山下電装社製)を用いて光電変換効率を測定し、得られた光電変換効率を初期変換効率とした。比較例1で得られた太陽電池の初期変換効率を基準として規格化し、下記の基準で評価した。
◎:規格化した値が1.05以上
○:規格化した値が1.0以上、1.05未満
×:規格化した値が1.0未満
(2) Photoelectric conversion efficiency A power source (manufactured by KEITHLEY, 236 model) is connected between the electrodes of the solar cell, and the photoelectric conversion efficiency is measured by using a solar simulation (manufactured by Yamashita Denso Co., Ltd.) having an intensity of 100 mW / cm 2. The obtained photoelectric conversion efficiency was defined as the initial conversion efficiency. The solar cell obtained in Comparative Example 1 was normalized based on the initial conversion efficiency, and evaluated according to the following criteria.
A: Normalized value is 1.05 or more. O: Normalized value is 1.0 or more and less than 1.05. X: Normalized value is less than 1.0.

Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000003

Figure JPOXMLDOC01-appb-T000004
Figure JPOXMLDOC01-appb-T000004

本発明によれば、光電変換効率が高いペロブスカイト太陽電池を提供することができる。 According to the present invention, a perovskite solar cell with high photoelectric conversion efficiency can be provided.

1 ペロブスカイト太陽電池
2 電極
3 対向電極(パターニングされた電極)
4 光電変換層
5 封止層
6 無機層
7 基板
1 Perovskite solar cell 2 Electrode 3 Counter electrode (patterned electrode)
4 Photoelectric conversion layer 5 Sealing layer 6 Inorganic layer 7 Substrate

Claims (10)

電極と、対向電極と、前記電極と前記対向電極との間に配置された光電変換層とを有する積層体と、前記対向電極上を覆って前記積層体を封止する封止層とを有するペロブスカイト太陽電池であって、
前記光電変換層は、一般式R-M-X(但し、Rは有機分子、Mは金属原子、Xはハロゲン原子又はカルコゲン原子である。)で表される有機無機ペロブスカイト化合物を含み、
前記封止層と前記対向電極との屈折率差が0.4以下である
ことを特徴とするペロブスカイト太陽電池。
A laminate including an electrode, a counter electrode, a photoelectric conversion layer disposed between the electrode and the counter electrode, and a sealing layer that covers the counter electrode and seals the stack. A perovskite solar cell,
The photoelectric conversion layer includes an organic / inorganic perovskite compound represented by a general formula RMX 3 (where R is an organic molecule, M is a metal atom, and X is a halogen atom or a chalcogen atom),
A perovskite solar cell, wherein a refractive index difference between the sealing layer and the counter electrode is 0.4 or less.
封止層は、無機フィラーを含有することを特徴とする請求項1記載のペロブスカイト太陽電池。 The perovskite solar cell according to claim 1, wherein the sealing layer contains an inorganic filler. 無機フィラーの屈折率が2~3であることを特徴とする請求項2記載のペロブスカイト太陽電池。 The perovskite solar cell according to claim 2, wherein the inorganic filler has a refractive index of 2 to 3. 無機フィラーがTiO又はZrOからなる粒子であることを特徴とする請求項2又は3記載のペロブスカイト太陽電池。 The perovskite solar cell according to claim 2 or 3, wherein the inorganic filler is particles made of TiO 2 or ZrO. 無機フィラーは、表面修飾剤により表面修飾されており、前記表面修飾剤は、P、Ti、Zr及びSiからなる群より選択される少なくとも1種の元素と、前記元素に結合した有機基とを含むことを特徴とする請求項2、3又は4記載のペロブスカイト太陽電池。 The inorganic filler is surface-modified with a surface modifier, and the surface modifier includes at least one element selected from the group consisting of P, Ti, Zr and Si, and an organic group bonded to the element. The perovskite solar cell according to claim 2, 3, or 4. 表面修飾剤における有機基の炭素数が8~22であることを特徴とする請求項5記載のペロブスカイト太陽電池。 6. The perovskite solar cell according to claim 5, wherein the organic group in the surface modifier has 8 to 22 carbon atoms. 封止層中の無機フィラーの含有量が50~95重量%であることを特徴とする請求項2、3、4、5又は6記載のペロブスカイト太陽電池。 7. The perovskite solar cell according to claim 2, wherein the content of the inorganic filler in the sealing layer is 50 to 95% by weight. 無機フィラーの平均粒子径が1μm以下であることを特徴とする請求項2、3、4、5、6又は7記載のペロブスカイト太陽電池。 The perovskite solar cell according to claim 2, 3, 4, 5, 6 or 7, wherein the inorganic filler has an average particle size of 1 µm or less. 封止層は、芳香族骨格を有する樹脂を含有し、前記芳香族骨格を有する樹脂の屈折率が1.6~2.0であることを特徴とする請求項1記載のペロブスカイト太陽電池。 The perovskite solar cell according to claim 1, wherein the sealing layer contains a resin having an aromatic skeleton, and the refractive index of the resin having an aromatic skeleton is 1.6 to 2.0. 封止層の外側を封止する無機層を有することを特徴とする請求項1、2、3、4、5、6、7、8又は9記載のペロブスカイト太陽電池。 The perovskite solar cell according to claim 1, further comprising an inorganic layer that seals the outside of the sealing layer.
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