WO2017126729A1 - Method for extracting test fixture for de-embedding - Google Patents

Abstract

The present invention relates to a method for extracting a test fixture for de-embedding. A method for de-embedding the test fixture comprises the steps of: (a) generating a first comparison test fixture by adding a first comparison transmission line to a discontinuity section of the test fixture including a transmission line and the discontinuity section; (b) generating a second comparison test fixture by adding a second comparison transmission line to the discontinuity section of the test fixture; (c) obtaining a first comparison transmission line by multiplying an inverse value of the first comparison test fixture by a second comparison test fixture; and (d) obtaining the test fixture by multiplying the inverse value of the first comparison transmission line obtained in step (c) by the first comparison test fixture. Therefore, the characteristics of the test fixture can be accurately extracted by generating and using the first comparison test fixture and the second comparison test fixture. Accordingly, it is possible to accurately perform de-embedding to measure the characteristic value of a device under test (DUT) by using the accurate characteristic value of the test fixture.

Description

Test fixture extraction method for de-embedding

The present invention relates to a method for extracting a test fixture for de-embedding, and more particularly, a test fixture that is measured together when the instrument measures (de-embedding) characteristics of a device under test (DUT). It is to extract the characteristics of the test fixture to accurately remove the characteristics of the test fixture.

As the density of devices and signal lines mounted on a printed circuit board (PCB) increases and the speed of digital interface standards increases, signal distortion and noise are generated due to reflection and interference of signals in the PCB. Due to the low power consumption of circuits, the vulnerability to noise is also increasing. Therefore, signal integrity (SI) and power integrity (PI) analysis are required.

These SI and PI include measurement-based analysis and simulation-based analysis. Simulation-based analysis can be used to predict SI and PI problems at the design stage without measurement-based analysis. Simulation-based analysis can reduce development and manufacturing time and reduce costs. can do.

However, in simulation-based SI and PI analysis, a test fixture is used to perform the measurement of the device under test (DUT), which is an interface with the instrument for measuring the device under test (DUT). Since the measurement result includes the characteristics of the device (DUT) to be measured and the characteristics of the test fixture, it is necessary to accurately grasp the characteristics of the test fixture in order to extract the characteristics of the device (DUT) from the measurement results of the measuring instrument.

[Preceding technical literature]

[Patent Documents]

(Patent Document 1) Republic of Korea Patent Publication No. 10-2014-0096350

The technical problem to be achieved by the present invention is to measure the device to be measured by measuring the characteristics of the device to be measured by accurately measuring the characteristics of the device to be measured and the characteristics of the test fixture included in the measurement results of the instrument It was extracted correctly.

According to an embodiment of the present invention, a method for extracting a test fixture for de-embedding includes (a) adding a first comparison transmission line to the discontinuity interval of the test fixture including a transmission line and a discontinuity interval, and thereby performing a first comparison test fixture. Generating (a-1) connecting the first comparison test fixtures to form a first comparison test fixture having a through structure; and (b) a second comparison to the discontinuity section of the test fixture. Generating a second comparison test fixture by adding a transmission line for the second comparison; (b-1) forming a second comparison test fixture having a through structure by connecting two second comparison test fixtures; -2) performing a TCC operation on the first comparison test fixture of the through structure and the second comparison test fixture of the through structure by performing TCC operation on the first comparison test fixture and the second comparison test fixture Obtaining a switch, (c) multiplying an inverse value of the first comparison test fixture obtained in the step (b-2) by the second comparison test fixture and performing the first comparison transmission line And (d) multiplying the inverse value of the first comparison transmission line obtained in step (c) with the first comparison test fixture to obtain a test fixture. .

The first comparison transmission line is formed to have a first length, and the second comparison transmission line is formed to have a second length corresponding to twice the first length.

The discontinuity section is an impedance discontinuous portion, characterized in that the via (via).

In the step (c), it is a common part of the first comparison test fixture and the second comparison test fixture from the multiplication operation of the inverse value of the first comparison test fixture and the second comparison test fixture. The transmission line and the discontinuity section are canceled, and a portion corresponding to the first comparison transmission line in the second comparison transmission line is canceled to obtain the first comparison transmission line having a first length. do.

In the step (a-1) and the step (b-1), the comparison test fixture of the through structure having two comparison test fixtures successively includes one comparison test fixture and the other comparison test fixture. In the case where the fixtures are connected, the comparison transmission line may be connected continuously.

In the steps (a) and (b), the first comparison test fixture and the second comparison test fixture are four-port type test fixtures, and the four-port type first comparison test fixture is A pair of test fixtures including the first comparison transmission line are provided in a pair of test fixtures through which two test fixtures are successively formed, and the second comparison test fixture having a four-port shape includes two test fixtures in succession. And a pair of forms including the second comparison transmission line in the test fixture through.

The four-port type first comparison test fixture includes a pair in which a first comparison transmission line is added between the two test fixtures included in the test fixture through, and the four-port type The second comparison test fixture has a form in which a second transmission line for comparison is added between the two test fixtures included in the test fixture through, and the first comparison is added between two test fixtures. The transmission line for the comparison or the second transmission line for comparison may be added to be connected to a discontinuity section formed in each of the two test fixtures.

According to this aspect, a test fixture extraction method for de-embedding according to an embodiment of the present invention includes a first comparison test fixture generated by adding an arbitrary first transmission line to a test fixture, and an arbitrary first addition to the test fixture. By using the second comparison test fixture generated by adding 2 transmission lines, the test fixture may be accurately separated and its characteristics may be extracted.

Accordingly, it is possible to accurately extract (de-embedding) the characteristic of the device (DUT) to be measured by removing the characteristic of the test fixture including the corresponding discrete impedance from which the characteristic is extracted from the measurement result of the measuring instrument. .

1 is a view schematically showing a change in a test fixture according to a test fixture extraction method for de-embedding according to an embodiment of the present invention.

2A and 2B are circuit diagrams schematically illustrating comparative test fixtures generated by a test fixture extraction method for de-embedding according to an embodiment of the present invention.

3 is a graph comparing characteristics of a test fixture extracted by a test fixture extraction method for de-embedding according to an embodiment of the present invention with characteristics of an actual test fixture.

4A and 4B are circuit diagrams schematically illustrating a comparison test fixture generated by a test fixture extraction method for de-embedding according to an embodiment of the present invention.

5 is a graph comparing characteristics of a test fixture extracted by a test fixture extraction method for de-embedding according to an embodiment of the present invention with characteristics of an actual test fixture.

6 is a flowchart illustrating a test fixture extraction method for de-embedding according to an embodiment of the present invention.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and like reference numerals designate like parts throughout the specification.

Next, a test fixture extraction method for de-embedding according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

First, referring to FIG. 1, a test fixture to which a test fixture extraction method for de-embedding according to an embodiment of the present invention is applied, and a change according to the present invention to the corresponding test fixture will be described. First, a test fixture The test fixture includes a transmission line 11 and a discontinuity 12 as shown in FIG. 1A, where the discontinuity 12 is the end of the test fixture 10. An impedance discontinuous portion formed in the portion, in one example, may be a via.

When the discontinuity section 12 is formed in the test fixture 10, ringing occurs in a time domain reflectometer (TDR) waveform generated for the characteristic calculation of the test fixture 10, and thus the test fixture 10 The accuracy of the extraction of the features is reduced, and in one embodiment of the present invention, the test fixture 10 having such a discontinuity section 12 is shown in FIGS. 1A and 1B and 1C. As described above, each of the first and second comparison test fixtures 20 and 30 is generated.

In this case, the discontinuity section 12 formed in the test fixture 10 may be another impedance discontinuity section other than the via, but is not limited thereto, and the via or other impedance discontinuity section that may be formed in the test fixture 10 may be a TDR. Waveforms and ringing are interpreted in conventional techniques for computing the properties of the test fixture 10 and will not be described in detail herein.

1B, the structure of the first comparison test fixture 20 is described in detail. The first comparison test fixture 20 includes a transmission line 11a and a discontinuity section 12a. A first comparison transmission line 21 is included.

In this case, the first comparison transmission line 21 is formed in a form in which the first comparison transmission line 21 is added to the test fixture 10 and is connected to the discontinuity section 12.

The first comparison transmission line 21 may be formed of the same transmission line as the transmission line 11 included in the test fixture 10, and the first comparison transmission line 21 deforms the test fixture 10. This is a part added to the test fixture 10 in order to compare the first comparison test fixture 20 and the other test fixtures that are generated by the comparison.

In one example, the length of the first comparison transmission line 21 may be formed as a first length, and the first length may be the same as or different from the length of the first comparison transmission line 21, but is not limited thereto. Do not.

Preferably, the first comparison transmission line 21 has a shorter length than the transmission line 11 of the test fixture 10, that is, the existing transmission line 11a included in the first comparison transmission line 21. It is preferable to have, the length may be L1mm.

As described above, the first comparison test fixture 20 is generated using the test fixture 10 as described with reference to FIG. 1B, but the transmission line 11a has the same structure as the test fixture 10. ) And a first comparison transmission line 21 included as the discontinuity section 12a and added to the discontinuity section 12a.

Subsequently, referring to FIG. 1C, the structure of the second comparison test fixture 30 formed by deforming the test fixture 10 will be described. The second comparison test fixture 30 may include the test fixture 10. ) Is generated by modifying the < RTI ID = 0.0 >) and adds a second comparison transmission line 31 to the test fixture 10.

In this case, the transmission line 11b and the discontinuity section 12b of the second comparison test fixture 30 are the transmission line 11 and the discontinuity section 12 of the test fixture 10 and the second comparison transmission line 31. ) Is added to the discontinuity section 12b similarly to the first comparison transmission line 21.

In this case, the second comparison transmission line 31 may be shorter than the transmission line 11b as described above with reference to the first comparison transmission line 21, and preferably, the first comparison transmission line. It may be L2mm (L2 = L1 * 2), which is twice as long as (21).

As such, the second comparison test fixture 30 is generated by using the test fixture 10 as described with reference to FIG. 1C, and includes all elements of the test fixture 10, but includes a second comparison. It has a structure that further includes a transmission line 31 for.

As described with reference to FIGS. 1B and 1C, the first comparison test fixture 20 and the second comparison test fixture 30 are generated using the test fixture 10, and the first comparison test fixture 20 is generated by using the test fixture 10. The comparison transmission line 21 and the second comparison transmission line 31 are added to each other to generate a structure.

In this case, the first and second comparison test fixtures 20 and 30 may be deformed into a through structure, as shown in FIGS. 1D and 1E, respectively. 200 includes two consecutive first comparison test fixtures 20 as shown in FIG. 1D, and the second comparison test fixture 300 of the through structure is shown in FIG. 1E. As shown in FIG. 2, the test apparatus includes two consecutive second comparison test fixtures 30.

In more detail, the first comparison test fixture 200 having the through structure adds the first comparison test fixture 20 in the opposite direction to each other, and the second comparison test fixture 300 having the through structure also has a second structure. The comparison test fixtures 30 are added in opposite directions to form a continuous structure.

As such, the actual circuit diagrams of the first and second comparison test fixtures 200 and 300 of the through structure including the first and second comparison test fixtures 20 and 30 in the form of through in succession are shown in FIGS. 2A and 2B. In detail, the first comparison test fixture 200 having the through structure has a shape of a fixture through which two first comparison test fixtures 20 are continuous as shown in FIG. 2A. In this case, since each of the first comparison test fixtures 20 includes a first comparison transmission line 21, two first comparisons are used in the middle of the first comparison test fixture 200 having a through structure. The transmission line 21 includes a continuous portion.

In this case, the transmission line TL1 positioned on the left side of two consecutive first comparison transmission lines TL3 21 formed in the center portion of the first comparison test fixture 200 having a through structure is compared to one first comparison. The first transmission line 11a included in the test fixture 20 for use, and the transmission line TL2 positioned on the right side of two consecutive first comparison transmission lines TL3 21 are compared with one another. The first transmission line 11b included in the test fixture 20 may be used.

Referring to FIG. 2B, a circuit of the second comparison test fixture 300 having a through structure in which two second comparison test fixtures 30 have a continuous shape will be described. The comparison test fixture 300 is connected to each of the second comparison test fixtures 30 on both sides thereof based on two consecutive second comparison transmission lines TL3 31.

In this case, the transmission line TL1 positioned on the left side of two consecutive second comparison transmission lines TL3 31 is the first transmission line 11b included in one second comparison test fixture 30. The transmission line TL2 located on the right side of two consecutive second comparison transmission lines TL3 31 is the first transmission line 11b included in the other second comparison test fixture 30. Can be.

In this case, two consecutive second comparison transmission lines TL3 and 31 are formed to have a length corresponding to twice the length of two consecutive first comparison transmission lines TL3 and 21. to be.

As described with reference to FIGS. 2A and 2B, the first and second comparison test fixtures 20 and 30 are formed by adding L1 or L2 comparison transmission lines 21 and 31, respectively. 1 Comparative test fixtures 20 are continuously formed to form a through structure, or the second comparison test fixtures 30 are continuously formed to form a through structure, whereby the comparison transmission lines 21 and 31 in the through structure are formed. Is formed between the discontinuous section 12 and the comparison transmission line (21, 31), thereby forming a structure that can easily extract the test fixture through the time domain channel characterization method (TCC) do.

As described with reference to FIGS. 1, 2A, and 2B, the test fixture extraction method for de-embedded according to an embodiment of the present invention is a first comparison test fixture 20, a second comparison from a single test fixture A first test fixture 200 having a through structure and a second comparison test fixture having a through structure from the first and second comparison test fixtures 20 and 30. An operation of extracting a test fixture using the first comparison test fixture 200 having the through structure and the second comparison test fixture 300 having the through structure is described.

The first and second comparison test fixtures 200 and 300 having the through structure formed as the through structure as shown in FIGS. 1D and 1E perform a TCC operation to perform a TCC operation. The first and second comparison test fixtures 20 and 30 in the form shown in FIG.

Then, the first comparison transmission included in the first comparison test fixture 20 is calculated by calculating the first and second comparison test fixtures 20 and 30 illustrated in FIGS. 1B and 1C. Extract the line 21.

More specifically, multiplying the value of the inverse of the first comparison test fixture (F1) 20 ([F1 (20)]-1) and the second comparison test fixture (F2) 30 In addition, a common part of the first comparison test fixture 20 and the second comparison test fixture 30 is canceled to leave a part of the second comparison test fixture 30, which is a second comparison transmission line ( 31, which is the same as the first comparison transmission line 21.

In the above operation, the first comparison test fixture 20 is regarded as F1 and the second comparison test fixture 30 is regarded as F2 to perform a multiplication operation.

In this case, since the first and second comparison test fixtures 20 and 30 are generated by being derived from one test fixture 10, but only the additional comparison transmission lines 21 and 31 are different, the first and second comparisons are performed. By computing the test fixtures 20 and 30, an operation result in which only the first comparison transmission line 21 remains is derived.

At this time, the inverse value of the first comparison transmission line 21 generated from the calculation of the first and second comparison test fixtures 20 and 30 is multiplied by the first comparison test fixture 20 to generate the first value. By removing the first comparison transmission line 21 from the first comparison test fixture 20, only the characteristics of the test fixture 10 may be extracted.

The test fixture 10 extracted from the method described with reference to FIGS. 1, 2A and 2B is a graph of insertion loss characteristics of the de-embedded test fixture 10 shown in FIG. As shown in the graph of return loss characteristics of the de-embedded test fixture 10 shown in b), the insertion loss and return loss characteristics of the test fixture 10 extracted from the test fixture extraction method for de-embedding according to the present invention are It can be seen that the characteristics of the actual test fixture are closer to the insertion loss characteristics and the return loss characteristics of the test fixture extracted from the de-embedding method according to the prior art.

Next, referring to FIGS. 4A and 4B, a test fixture extraction method for de-embedding according to an embodiment of the present invention will be described as an example of a 4-port type test fixture instead of a single test fixture. As shown in Figs. 4A and 4B, a four-port type test fixture includes two test fixtures in series and includes a pair including a structure including a comparison transmission line therebetween, and ports at both ends of each structure. Is formed to have a structure comprising a total of four ports.

In this case, in the structure of forming ports at both ends, the two test fixtures are continuously formed by forming a test fixture through structure, and the comparison transmission line has a discontinuity section of two test fixtures having a test fixture through structure. Are connected to each other.

In this case, when the comparison test fixture including the comparison transmission line is included in the test fixture through a pair as shown in FIG. 4A, each comparison test fixture includes the same comparison transmission line and the comparison transmission line. Includes first comparison transmission lines TL5 and TL6 21 having a first length L1 mm.

In addition, as described above, the first comparison transmission lines TL5 and TL6 21 may be formed to have a length shorter than the length of the transmission line already included in the test fixture.

As such, the first comparison test fixture 20 generated by adding the first comparison transmission lines TL5 and TL6 21 to the test fixture having four ports has a structure as shown in FIG. 4A. The second comparison transmission fixture 31 is added to the test fixture having four ports to generate the second comparison test fixture 30.

At this time, the second comparison transmission line 31 is formed of a second length (L2mm = L1mm * 2), which is twice the length of the first comparison transmission line 21, and is added to the test fixture through, The second comparison test fixture 30 is formed of a test fixture structure having a four-port shape as shown in FIG. 4B.

A test fixture with four ports transmits a comparison to an existing test fixture structure, except that the same first or second comparison transmission lines 21 and 31 are each added when forming a pair of comparison test fixtures. It is the same as that described above with reference to Figs. 1, 2A and 2B in that the lines are additionally formed. Accordingly, the test fixture structure of the 4-port type test fixture shown in FIGS. 4A and 4B may be de-embedded through the method described with reference to FIGS. 1, 2A, and 2B.

However, at this time, since the existing test fixture for generating a test fixture having four ports as shown in Figures 4a and 4b is a pair of test fixture having four ports and two consecutive test fixtures connected in the form of a test, In applying the fixture extraction method, the first comparison transmission line is added to each pair of test fixtures, and the second comparison transmission line is added to the other pair of test fixtures, respectively. Somewhat different from

In more detail, the inverse value of the first fixture F1 20, which is a pair of comparison test fixtures 20 each including the first comparison transmission line 21 shown in FIG. 4A, and FIG. 4B. The first comparison transmission line 21 from the calculation (product) of the second fixture F2 (30) which is a pair of comparison test fixtures 30 each including the second comparison transmission line 31 shown in FIG. L1 (21), which is obtained by calculating the inverse value of the obtained first comparison transmission line (L1) 21 and a pair of comparison test fixtures (F1) 20 shown in FIG. 4A. To extract a pair of test fixtures (not shown).

In this case, when a pair of test fixtures having four ports are formed to compare test fixtures as shown in FIGS. 4A and 4B to de-embed the test fixtures, discontinuity is achieved in a pair of test fixtures having four ports. Even if a section is included, it is effective to extract a pair of test fixtures accurately without being affected by it.

In this case, the characteristic accuracy of the test fixture extracted through the 4-port type test fixture extraction method according to an embodiment of the present invention is as shown in Fig. 5, the insertion loss of the test fixture extracted from the de-embedding method according to the prior art. It can be seen that the characteristics of the actual test fixture are closer to those of the characteristics and the return loss characteristics.

As described with reference to FIGS. 1 to 5, a test fixture extraction method of extracting a test fixture by generating two different comparison test fixtures by adding an arbitrary transmission line and extracting the test fixtures in order to extract the characteristics of the test fixture. Through this, it is possible to accurately extract the characteristics of the test fixture to improve the accuracy of the component measurement of the device under measurement (DUT).

The method of de-embedding the test fixture according to an embodiment of the present invention will be described sequentially with reference to the flowchart of FIG. 6. First, a first comparison is performed by adding a first transmission line 21 to the test fixture 10. The test fixture 20 is generated (S100).

In this case, the test fixture 10 includes a transmission line 11 and a discontinuity section 12, and the first transmission line 21 to be added is added to be connected to the discontinuity section 12.

In this case, the first transmission line 21 may be any length having a length shorter than the transmission line 12 length of the test fixture 10 as the first length L1mm.

Next, two first comparison test fixtures 20 generated in step S100 are connected to each other to form a first comparison test fixture 200 having a through structure (S200).

In addition, the second transmission line 31 is added to the test fixture 10 to generate a second comparison test fixture 30 (S200), and the two second comparison test fixtures 30 are connected to each other. A second comparison test fixture 300 having a through structure is formed (S400).

In this case, the test fixture used to generate the second comparison test fixture 30 is the same as the test fixture used in the step S100 of generating the first comparison test fixture 20, and the second transmission line 31 is used. Is a second length (L2mm = L1mm * 2) and has a length shorter than the transmission line length of the test fixture.

Next, the first comparison test fixture 200 having the through structure formed from the above steps S200 and S400 and the second comparison test fixture 300 having the through structure are respectively subjected to TCC operation (S500) to perform the first operation. The comparison test fixture 20 and the second comparison test fixture 30 are obtained.

Then, the first transmission line 21 is obtained by multiplying the inverse value of the first comparison test fixture 20 and the second comparison test fixture 30 (S600).

In this case, the first comparison test fixture 20 is generated in the first step S100 and is regarded as the first fixture F1, and the second comparison test fixture 300 is generated in the third step S300. The first fixture F1 and the second fixture F2 in common when the inverse value of the first fixture F1 is multiplied by the second fixture F2. The portion including the transmission line 11 and the discontinuity section 12, which are components of the test fixture 10, are canceled so that only the first comparison transmission line 21 remains.

In this case, when multiplying the inverse value of the first fixture F1 by the second fixture F2, the first comparison transmission line 21 corresponds to a part of the second comparison transmission line 31. More specifically, since it corresponds to 1/2 of the second comparison transmission line 31, the second comparison transmission line is obtained by multiplying the inverse value of the first fixture F1 by the second fixture F2. A part of the first comparison transmission line 21 is canceled at 31 so that only the first comparison transmission line 21 remains.

Finally, the test fixture 10 is obtained by multiplying the inverse value of the first comparison transmission line 21 obtained from the step S600 with the first fixture F1 that is the first comparison test fixture 20. (S700).

In this case, the first fixture F1, which is the first comparison test fixture 20, transmits the first comparison transmission to the transmission line 11 and the discontinuity section 12, which are structures of the test fixture 10 to be extracted in the present invention. Since it has a structure including the line 21, the first comparison test fixture 20 for calculating the inverse value of the first transmission line obtained in the third step (S600) to the first fixture (F1) In part, the first comparison transmission line 21 is canceled to accurately extract the test fixture 10.

In this way, even if the test fixture includes a discontinuity section from performing a series of steps (S100, S200, S300, S400, S500, S600, S700), it is possible to accurately extract the test fixture, thereby determining the exact characteristics of the test fixture. Therefore, the characteristics of the device to be measured (DUT) can also be accurately understood.

Although the embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

[Description of the code]

10: test fixture 11: transmission line

12: discontinuity section 20: first comparison test fixture

21: first transmission line 30: second comparison test fixture

31: second transmission line

Claims (7)

(a) generating a first comparison test fixture by adding a first comparison transmission line to the discontinuity interval of the test fixture including a transmission line and a discontinuity interval; (a-1) connecting the first comparison test fixtures to form a first comparison test fixture having a through structure; (b) generating a second comparison test fixture by adding a second comparison transmission line to the discontinuity section of the test fixture; (b-1) forming a second comparison test fixture having a through structure by connecting two second comparison test fixtures;  (b-2) obtaining a first comparison test fixture and a second comparison test fixture by performing a TCC operation on the first comparison test fixture of the through structure and the second comparison test fixture of the through structure;  (c) multiplying an inverse value of the first comparison test fixture obtained in step (b-2) with the second comparison test fixture to obtain the first comparison transmission line, and (d) multiplying the inverse value of the first comparison transmission line obtained in step (c) by the first comparison test fixture to obtain a test fixture The test fixture extraction method for de-embedding comprising a. The method of claim 1, The first comparison transmission line is formed to have a first length, and the second comparison transmission line is formed to have a second length corresponding to twice the first length. Way. The method of claim 1, The discontinuity section is an impedance discontinuity portion, the test fixture extraction method for de-embedding, characterized in that the via (via). The method of claim 1, In the step (c), it is a common part of the first comparison test fixture and the second comparison test fixture from the multiplication operation of the inverse value of the first comparison test fixture and the second comparison test fixture. The transmission line and the discontinuity section are canceled, and a portion corresponding to the first comparison transmission line in the second comparison transmission line is canceled to obtain the first comparison transmission line having a first length. Test fixture extraction method for de-embedding. The method of claim 1, In the step (a-1) and (b-1), The comparison test fixture having a through structure having two comparison test fixtures consecutively includes one comparison test fixture and one comparison test fixture connected to each other so that the comparison transmission line is connected continuously. Test fixture extraction method for de-embedding. The method of claim 1, In step (a) and step (b), The first comparison test fixture and the second comparison test fixture are four-port type test fixtures, The first comparison test fixture having a four-port shape includes a pair of test fixtures including the first comparison transmission line in a test fixture through which two test fixtures are successively formed. The second comparison test fixture having a four-port shape has a pair of forms including the second comparison transmission line in a test fixture through which two test fixtures are successively formed. How to extract test fixtures. The method of claim 6, The four-port type first comparison test fixture includes a pair in which a first comparison transmission line is added between the two test fixtures included in the test fixture through, The four-port type second comparison test fixture includes a pair in which a second comparison transmission line is added between the two test fixtures included in the test fixture through, The first comparison transmission line or the second comparison transmission line added between the two test fixtures is added to be connected to a discontinuity section formed in each of the two test fixtures, the test fixture extraction method for de-embedding .

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