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WO2017170172A1 - Masque de formation de film, procédé pour la fabrication de celui-ci et procédé pour la réparation de masque de formation de film - Google Patents

Masque de formation de film, procédé pour la fabrication de celui-ci et procédé pour la réparation de masque de formation de film Download PDF

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Publication number
WO2017170172A1
WO2017170172A1 PCT/JP2017/011844 JP2017011844W WO2017170172A1 WO 2017170172 A1 WO2017170172 A1 WO 2017170172A1 JP 2017011844 W JP2017011844 W JP 2017011844W WO 2017170172 A1 WO2017170172 A1 WO 2017170172A1
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WO
WIPO (PCT)
Prior art keywords
mask
metal layer
film
mask sheet
support member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2017/011844
Other languages
English (en)
Japanese (ja)
Inventor
修二 工藤
良 野口
齋藤　雄二
智華 韓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
V Technology Co Ltd
Original Assignee
V Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2016241333A external-priority patent/JP6341434B2/ja
Application filed by V Technology Co Ltd filed Critical V Technology Co Ltd
Priority to KR1020187026749A priority Critical patent/KR101986331B1/ko
Priority to CN201780018877.5A priority patent/CN108779550B/zh
Publication of WO2017170172A1 publication Critical patent/WO2017170172A1/fr
Priority to US16/081,828 priority patent/US10920311B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Definitions

  • the present invention relates to a film formation mask having a structure in which a film layer and a metal layer are laminated, and more particularly, a film formation mask capable of ensuring high shape accuracy and position accuracy in forming a thin film pattern, a manufacturing method thereof, and repair of the film formation mask It concerns the method.
  • the conventional film-forming mask is stretched so as to cover the opening with respect to the frame having the opening, and a plurality of metal thin films formed with a plurality of opening patterns for allowing the vapor deposition material to pass through are welded.
  • a plurality of metal thin films formed with a plurality of opening patterns for allowing the vapor deposition material to pass through are welded.
  • the metal thin film formed with a plurality of opening patterns is fixed to the frame with a predetermined tension applied so as not to cause wrinkles or slack.
  • the opening pattern is deformed or the position of the opening pattern is shifted due to the application of tension. For this reason, it has been difficult to ensure high film forming shape accuracy and film forming position accuracy.
  • the opening pattern is formed by etching a metal thin film, it is difficult to ensure high shape accuracy in the opening pattern due to isotropic etching. Therefore, it has been difficult to form a high-definition thin film pattern.
  • the present invention addresses such problems and provides a film formation mask capable of ensuring high shape accuracy and position accuracy in forming a thin film pattern, a method for manufacturing the same, and a method for repairing the film formation mask. Objective.
  • a film formation mask according to the first invention is formed by laminating a metal layer provided with a plurality of through holes including at least one opening pattern on a film layer provided with a plurality of opening patterns.
  • a mask sheet having one surface divided into a plurality of unit cells each including a plurality of opening patterns and through-holes, and the metal layer of the mask sheet without external tension are bonded to and supported by the mask sheet.
  • a metal support member having an opening corresponding to the unit cell of the mask sheet.
  • a film forming mask manufacturing method comprising: a film layer provided with a plurality of opening patterns on a transparent substrate; and a metal layer provided with a plurality of through holes containing at least one opening pattern.
  • a step of bonding a metal support member having an opening corresponding to the unit cell to the layer and a step of peeling the transparent substrate from the mask sheet are performed.
  • the manufacturing method of the film-forming mask according to the third invention has a film layer and a metal layer provided with a plurality of through holes sequentially laminated on a transparent substrate, and a plurality of the through holes on one side.
  • the film forming mask manufacturing method has a film layer and a metal layer provided with a plurality of through-holes sequentially laminated on a transparent substrate, and one surface of the plurality of through-holes.
  • Forming a mask sheet partitioned into a plurality of unit cells, and a metal support having openings corresponding to the unit cells in the metal layer of the mask sheet without external tension A step of bonding members, a step of irradiating the mask sheet with laser light from the metal layer side to form at least one opening pattern in the film layer in the through hole, and peeling the transparent substrate from the mask sheet And a process of performing.
  • the method of repairing a film forming mask according to the fifth aspect of the invention comprises laminating a metal layer provided with a plurality of through holes containing at least one of the opening patterns on a film layer provided with a plurality of opening patterns, A mask sheet in which one surface is partitioned into a plurality of unit cells each having a plurality of opening patterns and through holes, and the mask sheet is supported by bonding to the metal layer of the mask sheet in a state without external tension,
  • a film forming mask repair method comprising: a metal support member having an opening corresponding to the unit cell, wherein the unit adjacent to the metal layer along the peripheral edge of the unit cell A perforation for separating the cells from each other is provided, and the metal layer is formed along the perforation around a unit cell having a defect (hereinafter referred to as “defect unit cell”).
  • step of removing the defective unit cell, and the unit cell member having the same shape as the unit cell and having a film layer and a metal layer having a plurality of through-holes laminated Joining the unit mask member to the support member after fitting into the detached part, irradiating the unit mask member with laser light from the metal layer side, and forming an opening pattern in the through hole; Is to do.
  • a mask sheet having a structure in which a metal layer provided with a plurality of through holes containing at least one opening pattern is laminated on a film layer provided with a plurality of opening patterns has no external tension. Since it is supported by the support member in a state, the mask sheet is not subjected to tensile stress as in the prior art, and the shape accuracy and position accuracy of the opening pattern can be maintained with high accuracy. Therefore, high shape accuracy and position accuracy can be ensured for the formation of the thin film pattern.
  • FIG. 7 is a detailed explanatory diagram of FIG. 6. It is explanatory drawing which shows a transparent substrate peeling process in the manufacturing method of the film-forming mask by this invention. It is explanatory drawing which shows the modification of opening pattern formation in the manufacturing method of the film-forming mask by this invention.
  • FIG. 1 is a configuration diagram showing an embodiment of a film-forming mask according to the present invention, where (a) is a plan view, (b) is a cross-sectional view taken along line AA in (a), and (c) is a bottom view. It is.
  • This film forming mask is for forming a thin film pattern by depositing a film forming material on a substrate by vapor deposition or sputtering, and includes a mask sheet 1, a support member 2, and a frame 3. Yes.
  • the mask sheet 1 constitutes a mask main body, and has a structure in which a film layer 4 provided with a plurality of opening patterns and a metal layer 5 provided with a plurality of through holes including at least one opening pattern are laminated. have.
  • the mask sheet 1 is partitioned on one side into a plurality of unit cells 6 having a plurality of opening patterns and through holes.
  • the film layer 4 is a film made of a resin such as polyimide or polyethylene terephthalate (PET), and is formed on a film formation substrate as shown in an enlarged sectional view of the unit cell 6 in FIG.
  • a plurality of opening patterns 7 having the same shape and dimensions as the thin film pattern are formed in correspondence with the thin film pattern. More specifically, the opening pattern 7 may be an elongated slit-shaped pattern or a fine rectangular pattern.
  • the opening pattern 7 may be formed on the film layer 4 by laser ablation with the film layer 4 in close contact with the glass substrate, or laser ablation with the film layer 4 peeled off from the glass substrate. It may be performed by an appropriate method as necessary.
  • the irradiation position of the laser beam for forming the opening pattern 7 is based on an alignment mark with a deposition target substrate previously formed on the metal layer 5 described later, an alignment mark provided on the stage of the laser processing apparatus, or the like. In this case, it may be performed by an appropriate method as necessary. If the opening pattern 7 is formed in a state where the film layer 4 is in close contact with the glass substrate, generation of burrs at the edge of the opening pattern 7 can be suppressed. In the following description, the case where the opening pattern 7 is formed in a state where the film layer 4 is in close contact with the glass substrate will be described.
  • the metal layer 5 is bonded to one surface of the film layer 4 and is attracted by the magnetic force of a magnet disposed on the back surface of the film formation substrate to adhere the film layer 4 to the surface of the film formation substrate. It is made of a magnetic metal material such as nickel, nickel alloy, invar or invar alloy. Preferably, the metal layer 5 and the film layer 4 are preferably selected from materials having substantially the same thermal expansion coefficient.
  • the metal layer 5 is provided with a plurality of through-holes 8 including at least one of the opening patterns 7.
  • the metal layer 5 is provided with perforations 9 for separating adjacent unit cells 6 from each other along the peripheral edge of the unit cell 6 as shown in FIG. Each unit cell 6 can be cut out.
  • the film formation mask is a film formation mask for a multi-surface display substrate for the purpose of imposing a plurality of display panels on a large film formation substrate, for example, the unit of the mask sheet 1
  • the cell 6 corresponds to one display panel.
  • a metal support member 2 is provided so as to be bonded to the metal layer 5 of the mask sheet 1.
  • the support member 2 supports the mask sheet 1 by bonding to the metal layer 5 of the non-tensioned mask sheet 1 without external tension, and corresponds to each of the plurality of unit cells 6 of the mask sheet 1.
  • the unit cell 6 has an opening 10 that includes a plurality of opening patterns 7 and a plurality of through holes 8.
  • the support member 2 is a sheet-like member having a thickness of 100 ⁇ m to 300 ⁇ m, and is made of, for example, invar or invar alloy having a smaller thermal expansion coefficient than nickel as the metal layer 5.
  • the metal layer 5 of the mask sheet 1 and the support member 2 are preferably joined by laser spot welding at least at the periphery of the opening 10, and laser light is applied to the metal layer 5 and the film of the mask sheet 1 in the manufacturing process. It irradiates through the transparent substrate 11 mentioned later which adhere
  • a frame-like frame 3 is provided to be joined to the peripheral edge of the support member 2.
  • the frame 3 supports the support member 2 in a state in which a predetermined tension is applied so as not to cause wrinkles or slack, and is formed of invar or invar alloy.
  • the frame 3 and the support member 2 are joined by spot welding the peripheral region of the support member 2 to the one end surface 3 a of the frame 3.
  • the manufacturing method of the film-forming mask comprised in this way is demonstrated.
  • the formation process of the mask sheet 1 is demonstrated with reference to FIG.3 and FIG.4.
  • a polyimide resin solution is applied onto a transparent substrate 11 such as transparent glass, and this is heated and cured at 200 ° C. to 450 ° C.
  • a polyimide film 12 having a thickness of about 5 ⁇ m to 30 ⁇ m is formed.
  • a seed layer 13 of, for example, nickel or a nickel alloy having a thickness of, for example, about 50 to 150 nm is formed on the polyimide film 12 by sputtering, vapor deposition, or electroless plating.
  • a photoresist solution is applied on the seed layer 13 to the same thickness as the metal layer 5 to be formed, for example, about 10 ⁇ m to 30 ⁇ m, and then dried to form a resist.
  • Layer 14 is formed.
  • the resist layer 14 is exposed through a photomask 15 positioned and placed on the resist layer 14 using a known exposure apparatus.
  • the resist mask having a plurality of island patterns 16 is developed at the positions corresponding to the plurality of through holes 8 to be formed by developing using the developer for photoresist.
  • a positive resist in which an exposed portion is dissolved in a developer is used as the photoresist is shown, but a negative resist may be used.
  • a dry film may be used instead of the liquid resist.
  • the transparent substrate 11 is dipped in a nickel plating bath and electroplated, and nickel is formed on the seed layer 13 outside the island pattern 16 so as to be substantially the same as the resist layer 14.
  • the nickel layer 17 is formed by depositing to the same thickness of 5 ⁇ m to 20 ⁇ m.
  • the transparent substrate 11 is washed with an organic solvent or the photoresist stripping solution to remove the resist layer 14. Thereby, a nickel layer 17 having a recess 18 reaching the seed layer 13 corresponding to the island pattern 16 is formed.
  • the seed layer 13 exposed in the concave portion 18 of the nickel layer 17 is removed by etching using a known etching solution. Thereby, the metal layer 5 having the through hole 8 reaching the polyimide film 12 is formed.
  • an excimer laser having a wavelength of 400 nm or less, for example, KrF248 nm or a YAG laser having a wavelength of 355 nm is applied to the polyimide film 12 in the through hole 8 of the metal layer 5 so as to correspond to the thin film pattern to be formed.
  • the mask sheet 1 is formed by laminating the film layer 4 having the plurality of opening patterns 7 and the metal layer 5 provided with the plurality of through holes 8 including at least one opening pattern 7.
  • the metal layer 5 is not formed by electroplating, but a nickel layer 17 is formed on the polyimide film 12 by vapor deposition or sputtering, and a resist mask having openings corresponding to the through holes 8 is used.
  • the metal layer 5 having the through holes 8 reaching the polyimide film 12 may be formed by etching the layer 17.
  • perforations 9 for separating adjacent unit cells 6 from each other along the peripheral edge of the unit cell 6 are simultaneously formed in the metal layer 5 through the same process as the formation of the through hole 8. Is done.
  • etching, punching processing or laser processing is performed so as to correspond to the plurality of unit cells 6 of the mask sheet 1, and the opening 10 having a size including the plurality of opening patterns 7 and the plurality of through holes 8 in the unit cell 6.
  • the support member 2 is stretched in a state where tension is applied in the direction of the arrow so as not to bend and cover the opening 19 of the frame-shaped frame 3.
  • the support member 2 is spot welded to the one end surface 3 a of the frame 3 by irradiating the peripheral region of the support member 2 with the laser beam L2. Thereby, the support member 2 fixedly supported by the frame 3 is completed.
  • the joining process of the mask sheet 1 and the support member 2 is demonstrated with reference to FIG.
  • this joining step first, as shown in FIG. 6A, the opening of the unit cell 6 and the support member 2 of the mask sheet 1 with the metal layer 5 side of the mask sheet 1 facing the support member 2. Then, the mask sheet 1 is brought into close contact with the support member 2.
  • the metal layer 5 is irradiated with laser light L2 through the transparent substrate 11 so as to correspond to the peripheral region of the opening 10 of the support member 2 and the peripheral region of the mask sheet 1. Then, the metal layer 5 of the mask sheet 1 and the support member 2 are spot-welded. Specifically, as shown in FIG. 7, spot welding 20 is performed by irradiating the region between the peripheral portion of the opening 10 of the support member 2 and the peripheral portion of the unit cell 6 of the mask sheet 1 with laser light L2. Is called.
  • a linear laser beam L 3 having a wavelength of 308 nm and an energy density of 250 mJ / cm 2 is applied to the film layer 4 of the mask sheet 1 through the transparent substrate 11 at one end of the mask sheet 1. Irradiation is carried out while moving toward the other end. Thereby, the transparent substrate 11 is peeled off from the mask sheet 1, and the film-forming mask by this invention as shown in FIG. 1 is completed.
  • the mask sheet 1 is assembled while being supported by the transparent substrate 11, and the transparent substrate 11 is peeled off from the mask sheet 1 in the final step. No external tensile stress acts on the mask sheet 1 throughout the manufacturing process. Therefore, high shape accuracy and position accuracy are maintained in the opening pattern 7 laser-processed on the mask sheet 1. Therefore, high shape accuracy and position accuracy can be ensured in the formation of the thin film pattern.
  • the opening pattern 7 is formed at the final stage of the formation process of the mask sheet 1 .
  • the opening pattern 7 is formed as shown in FIG.
  • the laser beam L ⁇ b> 1 may be irradiated from the support member 2 side after the transparent substrate 11 is peeled off as shown in FIG. 9B.
  • the tensile stress from the outside does not act on the mask sheet 1, high shape accuracy and position accuracy are maintained in the opening pattern 7 laser-processed on the mask sheet 1.
  • FIG. 10 is an explanatory view showing a modification of the method for manufacturing a film formation mask according to the present invention.
  • This method for manufacturing a film formation mask intentionally generates internal stress (tensile stress) on the transparent substrate 11 in the metal layer 5 in the step of forming the nickel layer 17 in FIG.
  • the internal stress (tensile stress) is used to suppress the deflection of the film formation mask that occurs when the film is placed on the mask holder of the vapor deposition apparatus.
  • FIG. 1 A metal support member 2 having an opening 10 corresponding to the unit cell 6 on the metal layer 5 of the mask sheet 1 in a state where there is no particular tension and having a peripheral edge fixed to the frame-like frame 3 in advance. Be joined. At this time, the internal stress (tensile stress) remains in the metal layer 5 as indicated by an arrow F in FIG.
  • the polyimide film 12 (film layer 4) in the through hole 8 of the metal layer 5 is irradiated with laser light so that at least one opening pattern 7 is formed. It is formed.
  • the thickness of the support member 2 joined to the metal layer 5 of the mask sheet 1 is much thicker than the thickness of the metal layer 5, the mask sheet 1 is peeled off from the transparent substrate 11 in the metal layer 5 as described above. Internal stress (tensile stress) remains.
  • the film formation mask thus formed was brought into close contact with the film formation surface of the film formation substrate 26 on the mask holder of the film formation apparatus, as shown in FIG. Used in state.
  • the mask sheet 1 is bent due to thermal expansion as indicated by a broken line in FIG.
  • the internal stress (tensile stress) indicated by the arrow F exists in the metal layer 5
  • the bending of the mask sheet 1 is suppressed by this tensile stress.
  • the gap between the mask sheet 1 and the film formation substrate 26 can be reduced, and the shape accuracy and position accuracy of the thin film pattern formed on the film formation substrate 26 can be ensured with high accuracy. .
  • the amount of deflection of the mask sheet 1 and the support member 2 depends on the size of the film formation mask, the difference in thermal expansion between the mask sheet 1 and the support member 2, and the magnet disposed on the back surface of the film formation substrate 26. It depends on the suction force to the support member 2 and the like. Therefore, the magnitude of the internal stress (tensile stress) intentionally applied in the metal layer 5 is determined in consideration of the amount of bending. Specifically, the plating conditions of the metal layer 5 are changed as appropriate, and are experimentally determined so that the amount of bending is within an allowable range.
  • FIG. 11 is a process diagram for explaining a method of repairing a film formation mask according to the present invention.
  • the unit cell 6 having the defect hereinafter, “defect unit cell 21”.
  • the metal layer 5 and the film layer 4 are cut along the perforations 9 around the defect unit cell 21 to remove the defect unit cell 21. Due to the presence of the perforation 9, the defect unit cell 21 can be easily cut out.
  • the defect unit cell 21 may be removed by applying a knife blade along the perforation 9.
  • the film layer 4 having the same shape as the unit cell 6 and the metal layer 5 provided with a plurality of through holes 8 are laminated by the same process as in FIG.
  • the unit mask member 22 formed in advance on the transparent substrate 11 is fitted into the part where the defective unit cell 21 is removed.
  • the peripheral edge of the unit mask member 22 is irradiated with laser light L2 through the transparent substrate 11, and the metal layer 5 of the unit mask member 22 and the support member 2 are spot welded.
  • the unit mask member 22 is irradiated with the laser beam from the metal layer 5 side.
  • the opening pattern 7 is formed in the film layer 4 in the through hole 8 corresponding to the thin film pattern to be formed by irradiation with L1. Thereby, the repair of the film formation mask is completed. Note that the opening pattern 7 may be formed in the film layer 4 before the transparent substrate 11 is peeled off.
  • the film formation mask with the frame 3 has been described.
  • the present invention is not limited to this, and the frame 3 may be omitted.
  • the film formation mask may be manufactured as follows. First, as shown in FIG. 13A, a metal layer 5 provided with a plurality of through-holes 8 including at least one opening pattern 7 is laminated on a film layer 4 provided with a plurality of opening patterns 7.
  • the metal sheet 5 side of the mask sheet 1 having one surface partitioned into a plurality of unit cells 6 having a plurality of opening patterns 7 and through-holes 8 is installed and fixed on the flat surface of the table 23. After positioning so that the unit cell 6 of the mask sheet 1 and the opening 10 of the support member 2 coincide with each other, the mask sheet 1 is brought into close contact with the support member 2.
  • the metal layer 5 in the peripheral region of the opening 10 of the support member 2 and the peripheral region of the mask sheet 1 is irradiated with a laser beam L2 through the transparent substrate 11 to thereby mask the mask sheet.
  • the metal layer 5 and the support member 2 are spot-welded.
  • the laser beam L ⁇ b> 2 is irradiated to a region between the peripheral edge of the opening 10 of the support member 2 and the peripheral edge of the unit cell 6 of the mask sheet 1.
  • a line-shaped laser beam L3 having a wavelength of 308 nm and an energy density of 250 mJ / cm 2 is applied to the film layer 4 of the mask sheet 1 through the transparent substrate 11.
  • the transparent substrate 11 is peeled off from the mask sheet 1 by irradiating while moving from one end to the other end.
  • the film formation mask according to the present invention without the frame 3 is completed.
  • the support member 2 can be tightly fixed to the table 23 by the magnetic force of the magnet, and the transparent substrate 11 can be easily peeled off. Further, if the action of the magnetic force of the magnet is released, the film formation mask can be easily detached from the table 23.
  • the film formation mask is preferably installed in a mask holder having a beam in a portion that does not affect the film formation in the film formation apparatus. Thereby, the bending of a film-forming mask can be suppressed and high film-forming position accuracy can be ensured.
  • the support member 2 is a sheet-like member.
  • the present invention is not limited to this, and a plurality of belt-like members 24 are arranged in parallel in at least one direction as shown in FIG. It may be what you did. In this case, the portion sandwiched between the adjacent belt-like members 24 becomes the opening 10.
  • the support member 2 may be assembled in a lattice shape by intersecting a thick strip member 24A and a thin strip member 24B.
  • a groove 25 is formed on the surface of the belt-like member 24A on the metal layer 5 side (the upper surface side in FIG. 14B), and the belt-like member 24B is formed in the groove 25 with an arrow. It is good to fit so that the metal layer 5 side of the support member 2 may become flush.
  • the groove 25 may not be provided. In this case, spot welding of the mask sheet 1 and the support member 2 is performed on the upper band member 24 that is stacked.
  • the end portion of the belt-like member 24 is buried in a groove provided on the one end surface 3 a of the frame 3 so that the surface on the metal layer 5 side of the support member 2 and the one end surface 3 a of the frame 3 are flush with each other. Also good.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Selon la présente invention, les éléments suivants sont disposés sur une couche de film (4) pourvue d'une pluralité de motifs ouverts (7) : une feuille de masque (1) sur laquelle une couche métallique (5) pourvue d'une pluralité de trous traversants (8) comprenant au moins l'un des motifs ouverts (7) est disposée en couche, une surface de la feuille de masque (1) étant divisée en une pluralité de cellules unitaires (6) à l'intérieur desquelles la pluralité de motifs ouverts (7) et de trous traversants (8) sont présents ; et un élément de support métallique (2) qui est uni à la couche métallique (5) de la feuille de masque (1) et la supporte dans un état dans lequel il n'y a pas de tension externe et qui a des ouvertures (10) correspondant aux cellules unitaires (6) de la feuille de masque (1). Grâce à cette configuration, une précision de forme et une précision de position élevées sont garanties dans la formation de film d'un motif de film mince.
PCT/JP2017/011844 2016-03-29 2017-03-23 Masque de formation de film, procédé pour la fabrication de celui-ci et procédé pour la réparation de masque de formation de film Ceased WO2017170172A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020187026749A KR101986331B1 (ko) 2016-03-29 2017-03-23 성막 마스크, 그 제조 방법 및 성막 마스크의 리페어 방법
CN201780018877.5A CN108779550B (zh) 2016-03-29 2017-03-23 成膜掩模、其制造方法及成膜掩模的修复方法
US16/081,828 US10920311B2 (en) 2016-03-29 2018-08-31 Deposition mask, method for manufacturing the same, and method for repairing the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016-066678 2016-03-29
JP2016066678 2016-03-29
JP2016-241333 2016-12-13
JP2016241333A JP6341434B2 (ja) 2016-03-29 2016-12-13 成膜マスク、その製造方法及び成膜マスクのリペア方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US16/081,828 Continuation US10920311B2 (en) 2016-03-29 2018-08-31 Deposition mask, method for manufacturing the same, and method for repairing the same

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WO2017170172A1 true WO2017170172A1 (fr) 2017-10-05

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PCT/JP2017/011844 Ceased WO2017170172A1 (fr) 2016-03-29 2017-03-23 Masque de formation de film, procédé pour la fabrication de celui-ci et procédé pour la réparation de masque de formation de film

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018146869A1 (fr) * 2017-02-10 2018-08-16 株式会社ジャパンディスプレイ Masque de dépôt
US11791169B2 (en) 2019-08-16 2023-10-17 Infineon Technologies Ag Dual step laser processing of an encapsulant of a semiconductor chip package
CN117987771A (zh) * 2024-01-25 2024-05-07 季华实验室 一种高精密掩膜板及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
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JP2004335382A (ja) * 2003-05-09 2004-11-25 Dainippon Printing Co Ltd 多面付けマスク装置及びその組立方法
JP2013165060A (ja) * 2012-01-12 2013-08-22 Dainippon Printing Co Ltd 多面付け蒸着マスクの製造方法及びこれにより得られる多面付け蒸着マスク並びに有機半導体素子の製造方法
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