[go: up one dir, main page]

WO2016191199A1 - Diisopropylaminopentachlorodisilane - Google Patents

Diisopropylaminopentachlorodisilane Download PDF

Info

Publication number
WO2016191199A1
WO2016191199A1 PCT/US2016/033273 US2016033273W WO2016191199A1 WO 2016191199 A1 WO2016191199 A1 WO 2016191199A1 US 2016033273 W US2016033273 W US 2016033273W WO 2016191199 A1 WO2016191199 A1 WO 2016191199A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
film
precursor
substrate
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2016/033273
Other languages
English (en)
Inventor
Xiaobing Zhou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of WO2016191199A1 publication Critical patent/WO2016191199A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon

Definitions

  • the composition for film forming comprises the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, a nitrogen precursor, and an oxygen precursor, alternatively an inert gas, a nitrogen precursor, and an oxygen precursor.
  • the molecular hydrogen may be used with the Silicon Precursor Compound in the composition for forming an elemental silicon film including amorphous, polycrystalline silicon and moncrystalline films.
  • a vaporous or gaseous state of the molecular hydrogen, carbon precursor, nitrogen precursor or oxygen precursor may be generally referred to herein as an additional reactant gas.
  • Chemical vapor and atomic layer deposition processes generally conducted at a pressure from 0.01 torr to 100 torr, alternatively 0.01 torr to 10 torr, alternatively from 0.1 to 10 torr, alternatively from 1 to 10 torr.
  • PECVD utilizes radio frequency (10 kilohertz (kHz)-102 megahertz (MHz)) or microwave energy (0.1 -10 gigahertz (GHz)) at moderate power densities (0.1 -5 watts per square centimeter (W/cm 2 )), although any of these variables may be modified.
  • radio frequency 10 kilohertz (kHz)-102 megahertz (MHz)
  • microwave energy 0.1 -10 gigahertz (GHz)
  • moderate power densities 0.1 -5 watts per square centimeter (W/cm 2 )

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

L'invention concerne : un composé précurseur de silicium pour le dépôt, le composé précurseur de silicium comprenant du diisopropylaminopentachlorodisilane de formule (A) [(CH3)2CH]2NSiCl2SiCl3 ; une composition filmogène, la composition comprenant le composé précurseur de silicium et au moins un élément choisi parmi un gaz inerte, de l'hydrogène moléculaire, un précurseur de carbone, un précurseur d'azote et un précurseur d'oxygène ; un procédé de formation d'un film contenant du silicium sur un substrat utilisant le composé précurseur de silicium ; et le film contenant du silicium ainsi formé.
PCT/US2016/033273 2015-05-22 2016-05-19 Diisopropylaminopentachlorodisilane Ceased WO2016191199A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562165312P 2015-05-22 2015-05-22
US62/165,312 2015-05-22

Publications (1)

Publication Number Publication Date
WO2016191199A1 true WO2016191199A1 (fr) 2016-12-01

Family

ID=56084434

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2016/033273 Ceased WO2016191199A1 (fr) 2015-05-22 2016-05-19 Diisopropylaminopentachlorodisilane

Country Status (2)

Country Link
TW (1) TW201708235A (fr)
WO (1) WO2016191199A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108346559A (zh) * 2017-01-25 2018-07-31 三星电子株式会社 制作半导体装置的方法及形成介电层的方法
JP2019070179A (ja) * 2017-10-07 2019-05-09 株式会社Flosfia 成膜方法
WO2020205722A1 (fr) * 2019-03-30 2020-10-08 Dow Silicones Corporation Procédé pour produire des nanoparticules
US20210403330A1 (en) * 2016-09-26 2021-12-30 Jiangsu Nata Opto-Electronic Materials Co. Ltd. Trichlorodisilane

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5310583A (en) 1992-11-02 1994-05-10 Dow Corning Corporation Vapor phase deposition of hydrogen silsesquioxane resin in the presence of nitrous oxide
US20140187025A1 (en) * 2012-12-27 2014-07-03 Tokyo Electron Limited Method of forming silicon film and film forming apparatus
US20150024608A1 (en) * 2012-06-01 2015-01-22 Air Products And Chemicals, Inc. Organoaminodisilane Precursors and Methods for Depositing Films Comprising Same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5310583A (en) 1992-11-02 1994-05-10 Dow Corning Corporation Vapor phase deposition of hydrogen silsesquioxane resin in the presence of nitrous oxide
US20150024608A1 (en) * 2012-06-01 2015-01-22 Air Products And Chemicals, Inc. Organoaminodisilane Precursors and Methods for Depositing Films Comprising Same
US20140187025A1 (en) * 2012-12-27 2014-07-03 Tokyo Electron Limited Method of forming silicon film and film forming apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HEINZ SCHUH ET AL: "Disilanyl-amines - compounds comprising the structural unit SiSiN, as single-source precursors for plasma-enhanced chemical vapour deposition (PE-CVD) of silicon nitride", ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, WILEY - V C H VERLAG GMBH & CO. KGAA, DE, vol. 619, no. 8, 1 January 1993 (1993-01-01), pages 1347 - 1352, XP002486454, ISSN: 0044-2313, DOI: 10.1002/ZAAC.19936190805 *

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210403330A1 (en) * 2016-09-26 2021-12-30 Jiangsu Nata Opto-Electronic Materials Co. Ltd. Trichlorodisilane
KR20180087807A (ko) * 2017-01-25 2018-08-02 삼성전자주식회사 반도체 장치의 제조 방법
JP2018121057A (ja) * 2017-01-25 2018-08-02 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 半導体装置の製造方法
KR102768588B1 (ko) 2017-01-25 2025-02-13 삼성전자주식회사 반도체 장치의 제조 방법
JP7112631B2 (ja) 2017-01-25 2022-08-04 三星電子株式会社 半導体装置の製造方法
CN108346559A (zh) * 2017-01-25 2018-07-31 三星电子株式会社 制作半导体装置的方法及形成介电层的方法
JP7023445B2 (ja) 2017-10-07 2022-02-22 株式会社Flosfia 成膜方法
JP2019070179A (ja) * 2017-10-07 2019-05-09 株式会社Flosfia 成膜方法
KR20210137572A (ko) * 2019-03-30 2021-11-17 다우 실리콘즈 코포레이션 나노입자의 제조 방법
JP2022525518A (ja) * 2019-03-30 2022-05-17 ダウ シリコーンズ コーポレーション ナノ粒子を製造する方法
CN113613769A (zh) * 2019-03-30 2021-11-05 美国陶氏有机硅公司 制备纳米粒子的方法
US11975301B2 (en) 2019-03-30 2024-05-07 Dow Silicones Corporation Method of producing nanoparticles
JP7549598B2 (ja) 2019-03-30 2024-09-11 ダウ シリコーンズ コーポレーション ナノ粒子を製造する方法
KR102743536B1 (ko) 2019-03-30 2024-12-18 다우 실리콘즈 코포레이션 나노입자의 제조 방법
WO2020205722A1 (fr) * 2019-03-30 2020-10-08 Dow Silicones Corporation Procédé pour produire des nanoparticules

Also Published As

Publication number Publication date
TW201708235A (zh) 2017-03-01

Similar Documents

Publication Publication Date Title
US11142462B2 (en) Trichlorodisilane
KR102670873B1 (ko) 트리스(다이실라닐)아민
US10157735B2 (en) Pentachlorodisilane
WO2016191199A1 (fr) Diisopropylaminopentachlorodisilane
KR102188816B1 (ko) 아미노클로로하이드리도다이실란
KR102228807B1 (ko) SiH-무함유 비닐다이실란

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16725728

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16725728

Country of ref document: EP

Kind code of ref document: A1