WO2016169347A1 - 一种显示基板及其制作方法、显示装置及其制作方法 - Google Patents
一种显示基板及其制作方法、显示装置及其制作方法 Download PDFInfo
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- WO2016169347A1 WO2016169347A1 PCT/CN2016/075980 CN2016075980W WO2016169347A1 WO 2016169347 A1 WO2016169347 A1 WO 2016169347A1 CN 2016075980 W CN2016075980 W CN 2016075980W WO 2016169347 A1 WO2016169347 A1 WO 2016169347A1
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present disclosure relates to the field of semiconductor fabrication technology, and in particular, to a display substrate, a method of fabricating the same, a display device, and a method of fabricating the same.
- a flexible display device is a display device formed based on a flexible substrate material. Since the flexible display device has the characteristics of being curlable, wide viewing angle, and easy to carry, the flexible display device has broad application prospects and good market potential in many display applications such as portable products.
- the metal wire layer and the lower layer of the frame portion of the flexible display device are each composed of an inorganic film layer, and the inorganic film layer is usually made of a material such as SiNx or SiOx, resulting in poor toughness of the inorganic film layer, and flexible display. When the frame of the device is bent, the metal wire is more likely to be broken due to the breakage of the inorganic film layer, thereby affecting the display quality of the flexible display.
- the present disclosure provides a display substrate, a manufacturing method thereof, and a display device, which can solve the defects that the metal frame is more susceptible to breakage due to breakage of the inorganic film layer when the frame of the flexible display device is bent in the prior art.
- the present disclosure provides a display substrate including a substrate and a metal line layer on the substrate, wherein the displayed substrate includes a first region, the substrate having the first region a first substrate portion, the metal line layer having a first metal line layer portion in the first region, and wherein
- the first metal line layer portion is directly formed on the first substrate portion
- An organic buffer layer is disposed between the first substrate portion and the first metal line layer portion, the first metal line layer portion being directly formed on the organic buffer layer.
- the display substrate further includes a second region adjacent to the first region, wherein the substrate has a second substrate portion in the second region, the metal The wire layer has a second metal wire layer portion in the second region, and wherein
- An inorganic insulating layer is further disposed on the second substrate portion, and the second metal line layer portion is formed on the inorganic insulating layer.
- the display substrate further includes a display area, and the first area is located at a frame area on both sides of the display area.
- the inorganic insulating layer includes an inorganic buffer layer and a gate insulating layer
- the metal line layer is a gate metal layer
- an interlayer insulating layer, a passivation layer, and a flat layer are sequentially formed on the gate metal layer.
- Layer, pixel defining layer and encapsulation layer are sequentially formed on the gate metal layer.
- the interlayer insulating layer and the passivation layer are discontinuous such that there is no interlayer insulating layer and a passivation layer on the first metal line layer portion.
- the inorganic insulating layer includes an inorganic buffer layer, a gate insulating layer, and an interlayer insulating layer
- the metal line layer is a source/drain metal layer
- a passivation layer is sequentially formed on the source/drain metal layer.
- a flat layer a pixel defining layer, and an encapsulating layer.
- the passivation layer is discontinuous such that there is no passivation layer on the first metal line layer portion.
- the first metal line layer portion is directly formed on the first substrate portion, and a thickness of the first metal line layer portion is greater than or equal to a thickness of the second metal line layer portion So that the upper surface of the metal wire layer is flat.
- the substrate comprises polyimide, polycarbonate, polyacrylate, polyetherimide, polyethersulfone, polyethylene terephthalate, and polyethylene naphthalate. At least one of the alcohol esters.
- the encapsulation layer is formed by alternately depositing a plurality of inorganic and organic layers.
- the present disclosure provides a method of fabricating a display substrate, including:
- a portion of the first metal line layer of the metal line layer is formed directly on the first substrate portion of the substrate,
- An organic buffer layer is disposed between the first metal line layer portion of the metal line layer and the first substrate portion of the substrate, and the first metal line layer portion is directly disposed on the organic buffer layer.
- the substrate further has a second substrate portion, the method further comprising:
- An inorganic insulating layer is provided only on the second substrate portion such that an inorganic insulating layer is disposed between the second substrate portion of the substrate and the second metal line layer portion of the metal line layer.
- the substrate further has a second substrate portion, the method further comprising:
- the inorganic insulating layer on the first substrate portion is removed.
- the inorganic insulating layer includes an inorganic buffer layer and a gate insulating layer, and the metal line layer is a gate metal layer, and the method further includes:
- An interlayer insulating layer, a passivation layer, a planarization layer, a pixel defining layer, and an encapsulation layer are sequentially formed on the gate metal layer.
- the interlayer insulating layer and the passivation layer are discontinuous such that there is no interlayer insulating layer and a passivation layer on the first metal line layer portion.
- the inorganic insulating layer includes an inorganic buffer layer, a gate insulating layer, and an interlayer insulating layer
- the metal line layer is a source/drain metal layer
- the method further includes:
- a passivation layer, a planarization layer, a pixel defining layer, and an encapsulation layer are sequentially formed on the source/drain metal layer.
- the passivation layer is continuous such that there is no passivation layer on the first metal line layer portion.
- forming the encapsulation layer includes:
- a plurality of inorganic layers and organic layers are alternately deposited to form the encapsulation layer.
- the present disclosure provides a display device including the above display substrate.
- the present disclosure provides a method of fabricating a display device, including the above-described method of fabricating a display substrate.
- the present disclosure provides a display substrate, a method of fabricating the same, a display device, and a method of fabricating the same, and a bend-resistant structure is formed in a region where a frame portion of the display substrate is bent, and the bending resistance can be enhanced. Improve the quality of flexible displays.
- FIG. 1 is a top plan view of a display substrate according to an embodiment of the present disclosure
- FIG. 2 is a side view of a display substrate according to an embodiment of the present disclosure
- FIG. 3 is a partial cross-sectional structural view of a display substrate provided in Embodiment 1 of the present disclosure
- FIG. 4 is a partial cross-sectional structural view of a display substrate provided in Embodiment 2 of the present disclosure
- FIG. 5 is a partial cross-sectional structural view of a display substrate provided in Embodiment 3 of the present disclosure.
- FIG. 6 is a partial cross-sectional structural view of a display substrate provided in Embodiment 4 of the present disclosure.
- FIG. 7 is a partial cross-sectional structural view of a display substrate provided in Embodiment 5 of the present disclosure.
- FIG. 8 is a partial cross-sectional structural view of a display substrate provided in Embodiment 6 of the present disclosure.
- FIG. 9 is a partial cross-sectional structural view of a display substrate provided in Embodiment 7 of the present disclosure.
- FIG. 10 is a schematic flow chart of a method of fabricating a display substrate according to Embodiment 8 of the present disclosure.
- the reference numerals in Figures 1-9 are: 1-substrate; 2-inorganic buffer layer; 3-gate insulating layer; 4-metal layer; 5-interlayer insulating layer; 6-passivation layer; Layer; 8-pixel defining layer; 9-encapsulated layer; 10-organic buffer layer; 12-display area; 13-bending resistant area; 14-display substrate.
- An embodiment of the present disclosure provides a display substrate including a substrate and a metal line layer on the substrate, wherein the display substrate further includes a first region, the substrate having the first a first substrate portion in the region, the metal line layer having a first metal line layer portion in the first region, and wherein the first metal line layer portion is directly formed on the first substrate portion And, or an organic buffer layer between the first substrate portion and the first metal line layer portion, the first metal line layer portion is directly formed on the organic buffer layer.
- the metal wire layer is directly formed on the substrate, that is, the metal wire layer is directly in contact with the flexible substrate, the gate insulating layer and the inorganic buffer layer can be prevented from being bent.
- the fracture causes the metal wire layer to be broken. If the organic buffer layer is formed on the substrate and the metal wire layer is directly formed on the organic buffer layer, the breakage of the metal wire layer when the region is bent can be effectively avoided.
- the display substrate 14 further includes a display area 12 , and the curved area 13 is located on a frame area on both sides of the display area 12 .
- an inorganic insulating layer is further disposed on the substrate (specifically, the second substrate portion of the substrate), A metal wire layer (specifically, a second metal wire layer portion of the metal wire layer) is formed on the inorganic insulating layer.
- the metal line layer is a gate metal layer, and an interlayer insulating layer, a passivation layer, and a flat layer are sequentially formed on the gate metal layer. , pixel defining layer and encapsulation layer.
- the interlayer insulating layer and the passivation layer are discontinuous such that there is no interlayer insulating layer and a passivation layer on the first metal line layer portion.
- the metal line layer is a source/drain metal layer
- a passivation layer is sequentially formed on the source/drain metal layer. a flat layer, a pixel defining layer, and an encapsulation layer.
- the passivation layer is discontinuous such that there is no passivation layer on the first metal line layer portion.
- the inorganic insulating layer when the metal line layer is formed of a gate metal layer, the inorganic insulating layer includes an inorganic buffer layer and a gate insulating layer; when the metal line layer is formed of a source/drain metal layer, the inorganic insulating layer includes an inorganic buffer layer , gate insulating layer and interlayer insulating layer.
- the first metal line layer portion in the first region (ie, the region resistant to bending), is directly formed on the first substrate portion, and the thickness of the first metal line layer portion It is larger than the thickness of the second metal wire layer such that the upper surface of the metal wire layer is flat. It can be understood that the thickness of the metal wire layer in the region resistant to bending (ie, the thickness of the first metal wire layer portion) may also be equal to the thickness of the region of the metal wire layer adjacent to the region resistant to bending (ie, The thickness of the second metal line layer portion).
- the substrate comprises polyimide, polycarbonate, polyacrylate, polyetherimide, polyethersulfone, polyethylene terephthalate, and polyethylene naphthalate. At least one of the alcohol esters.
- the substrate can be a flexible substrate.
- the encapsulation layer is formed by alternately depositing a plurality of inorganic and organic layers.
- Another embodiment of the present disclosure provides a method of fabricating a display substrate, including:
- a portion of the first metal line layer of the metal line layer is formed directly on the first substrate portion of the substrate, or
- An organic buffer layer is disposed, and the first metal line layer portion is directly disposed on the organic buffer layer.
- the substrate further has a second substrate portion, the method further comprising providing an inorganic insulating layer only on the second substrate portion such that the second liner of the substrate An inorganic insulating layer is disposed between the bottom portion and the second metal line layer portion of the metal line layer.
- the substrate further has a second substrate portion, the method further comprising: forming an inorganic insulating layer on the first substrate portion and the second substrate portion; removing the An inorganic insulating layer on the first substrate portion.
- the metal wire layer is directly formed on the substrate, and the metal wire layer is directly in contact with the flexible substrate, which can avoid breakage of the metal wire layer caused by breakage of the gate insulating layer and the inorganic buffer layer when bent. If the organic buffer layer is formed on the substrate first, and then the metal line layer is directly formed on the organic buffer layer, the breakage of the metal line layer when the region is bent can be effectively avoided.
- One embodiment of the present disclosure provides a method of fabricating a display substrate in which a predetermined bending-resistant structure is formed in a region where a frame portion of a display substrate is bent, which enhances bending resistance and improves the quality of the flexible display.
- the method further includes:
- interlayer insulating layer, a passivation layer, a planarization layer, a pixel defining layer, and an encapsulation layer are sequentially formed on the gate metal layer.
- the interlayer insulating layer and the passivation layer are discontinuous such that there is no interlayer insulating layer and a passivation layer on the first metal line layer portion.
- the metal line layer is a gate metal layer. Then, in the region where the bending resistance is predetermined, the inorganic buffer layer and the gate insulating layer are etched so that the metal line layer is directly formed on the substrate or the organic buffer layer.
- the method further includes:
- a passivation layer, a planarization layer, a pixel defining layer, and an encapsulation layer are sequentially formed on the source/drain metal layer.
- the passivation layer is continuous such that the first metal line layer portion No passivation layer
- the metal line layer is a source/drain metal layer. Then, the inorganic buffer layer, the gate insulating layer and the interlayer insulating layer are etched in a region where bending resistance is predetermined, so that the metal wire layer is directly formed on the substrate or the organic buffer layer.
- the step of forming the encapsulation layer specifically includes alternately depositing a plurality of inorganic layers and an organic layer to form the encapsulation layer.
- Still another embodiment of the present disclosure provides a display device including the above display substrate.
- the display device can be a product or component having a display function such as a television, a display, a tablet, a mobile phone, an electronic paper, a navigator, a digital photo frame, a video camera, a camera, or the like.
- FIG. 3 a partial cross-sectional structural view of a display substrate provided in Embodiment 1 is shown. It should be understood that in Fig. 3 and Figs. 4-9 below, a cross-sectional view of the bending resistant region 13 of the display substrate of Fig. 1 and its adjacent left and right regions is shown.
- the substrate 1 and the metal wire layer 4 are included.
- the metal line layer 4 is directly formed on the substrate 1.
- the substrate 1 further includes an inorganic buffer layer 2 and a gate insulating layer 3, and a metal wire layer 4 is formed on the gate insulating layer 3.
- the metal line layer 4 may be a gate metal layer.
- an interlayer insulating layer 5, a passivation layer 6, a flat layer 7, a pixel defining layer 8, and an encapsulating layer 9 are sequentially formed on the metal line layer 4.
- the metal wire layer 4 is directly formed on the substrate 1, that is, the metal wire layer 4 can be directly in contact with the flexible substrate 1, and the gate insulating layer 3 and the inorganic buffer layer 2 can be prevented from being broken when bent. The breakage of the metal wire layer 4.
- FIG. 4 a partial cross-sectional structure of a display substrate provided in Embodiment 2 is shown. intention.
- the difference between the display substrate in Embodiment 2 and the display substrate structure in Embodiment 1 is that:
- the interlayer insulating layer 5 and the passivation layer 6 are etched so that the interlayer insulating layer 5 and the passivation layer 6 are not included in the region resistant to bending, and the flat layer 7 is directly formed on the metal wiring layer 4.
- Embodiment 2 The structure of other parts of the display substrate in Embodiment 2 is the same as that of Embodiment 1, and will not be described herein.
- FIG. 5 a partial cross-sectional structural view of a display substrate provided for Embodiment 3 is shown.
- the display substrate in Embodiment 3 differs from the display substrate structure in Embodiment 2 in that:
- the metal wire layer 4 is a source/drain metal layer, and in the region adjacent to the bend resistant region, the substrate 1 includes an inorganic buffer layer 2, a gate insulating layer 3, and an interlayer insulating layer 5, and the metal wires The layer 4 is formed on the interlayer insulating layer 5.
- a passivation layer 6, a flat layer 7, a pixel defining layer 8, and an encapsulation layer 9 are sequentially formed on the metal line layer 4.
- Embodiment 3 The structure of other parts of the display substrate in Embodiment 3 is the same as that of Embodiment 2, and details are not described herein again.
- FIG. 6 a partial cross-sectional structural view of a display substrate provided in Embodiment 4 is shown.
- the substrate 1 further includes an inorganic buffer layer 2 and a gate insulating layer 3, and the metal wire layer 4 is formed on the gate insulating layer 3, and the metal wire layer 4 is Gate metal layer.
- an interlayer insulating layer 5, a passivation layer 6, a flat layer 7, a pixel defining layer 8, and an encapsulating layer 9 are sequentially formed on the metal line layer 4.
- interlayer insulating layer 5 and the passivation layer 6 can be etched so that the interlayer insulating layer 5 and the passivation layer 6 are not included in the bending resistant region, and the flat layer 7 is directly formed on the metal line.
- the metal wire layer 4 is directly formed on the organic buffer layer 10, that is, the metal wire layer 4 is directly in contact with the organic buffer layer 10.
- the organic buffer layer 10 is not easily broken, and the structure can effectively prevent the metal wire layer 4 from being broken when the region is bent.
- FIG. 7 a partial cross-sectional structural view of a display substrate provided in Embodiment 5 is shown.
- the difference between the display substrate in Embodiment 5 and the display substrate structure in Embodiment 4 is that:
- the metal wire layer 4 is a source/drain metal layer, and in the region adjacent to the bend resistant region, the substrate 1 includes an inorganic buffer layer 2, a gate insulating layer 3, and an interlayer insulating layer 5, and the metal wires The layer 4 is formed on the interlayer insulating layer 5.
- a passivation layer 6, a flat layer 7, a pixel defining layer 8, and an encapsulating layer 9 are sequentially formed on the metal line layer 4 in a region adjacent to the bend-resistant region.
- Embodiment 5 The structure of other parts of the display substrate in Embodiment 5 is the same as that of Embodiment 4, and details are not described herein again.
- FIG. 8 a partial cross-sectional structural view of a display substrate provided in Embodiment 6 is shown.
- the display substrate in Embodiment 6 differs from the display substrate structure in Embodiment 1 in that:
- the thickness of the metal wire layer 4 is increased so that the upper surface of the metal wire layer 4 is flat.
- Embodiment 6 The structure of other parts of the display substrate in Embodiment 6 is the same as that of Embodiment 1, and details are not described herein again.
- FIG. 9 a partial cross-sectional structural view of a display substrate provided in Embodiment 7 is shown.
- the display substrate in Embodiment 7 differs from the display substrate structure in Embodiment 6 in that:
- the interlayer insulating layer 5 and the passivation layer 6 are etched so that the interlayer insulating layer 5 and the passivation layer 6 are not included in the region resistant to bending, and the flat layer 7 is directly formed on the metal wiring layer 4.
- Embodiment 7 The structure of other parts of the display substrate in Embodiment 7 is the same as that of Embodiment 6, and will not be described herein.
- Embodiment 8 will be described below in conjunction with a schematic cross-sectional view of the display substrate structure as shown in FIG. As shown in FIG. 10, the manufacturing method of this embodiment may specifically include the following steps:
- S4 An interlayer insulating layer 5, a passivation layer 6, a flat layer 7, a pixel defining layer 8, and an encapsulating layer 9 are sequentially formed on the metal line layer 4.
- the interlayer insulating layer 5 and the passivation layer 6 can be further etched so that the interlayer insulating layer 5 and the passivation layer 6 are not included in the region resistant to bending, and the display substrate as shown in FIG. 4 is obtained.
- the metal wire layer 4 may be formed by using a source/drain metal layer to obtain a display substrate as shown in FIG. 5; in the region resistant to bending, an organic buffer layer 10 may be formed between the substrate 1 and the metal wire layer 4, and a map is obtained. 6.
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Abstract
Description
Claims (20)
- 一种显示基板,包括衬底和在所述衬底上的金属线层,其中,所述显示基板包含第一区域,所述衬底具有在所述第一区域中的第一衬底部分,所述金属线层具有在所述第一区域中的第一金属线层部分,并且其中,所述第一金属线层部分直接形成在所述第一衬底部分,或者,在所述第一衬底部分和所述第一金属线层部分之间设置有机缓冲层,所述第一金属线层部分直接形成在所述有机缓冲层上。
- 根据权利要求1所述的显示基板,还包含与所述第一区域相邻的第二区域,其中,所述衬底具有在所述第二区域中的第二衬底部分,所述金属线层具有在所述第二区域中的第二金属线层部分,并且其中,所述第二衬底部分上还设置有无机绝缘层,所述第二金属线层部分形成在所述无机绝缘层上。
- 根据权利要求1所述的显示基板,其中,所述显示基板还包含显示区域,所述第一区域位于所述显示区域两侧的边框区域。
- 根据权利要求2所述的显示基板,其中,所述无机绝缘层包括无机缓冲层和栅绝缘层,所述金属线层为栅金属层,在所述栅金属层上依次形成有层间绝缘层、钝化层、平坦层、像素限定层及封装层。
- 根据权利要求4所述的显示基板,其中,所述层间绝缘层和所述钝化层为非连续的,以使得在所述第一金属线层部分上不具有层间绝缘层和钝化层。
- 根据权利要求2所述的显示基板,其中,所述无机绝缘层包括无机缓冲层、栅绝缘层和层间绝缘层,所述金属线层为源漏金属层,在所述源漏金属层上依次形成有钝化层、平坦层、像素限定层及封装层。
- 根据权利要求6所述的显示基板,其中,所述钝化层为非连续的,以使得在所述第一金属线层部分上不具有钝化层。
- 根据权利要求1所述的显示基板,其中,所述第一金属线层部分直接形成在所述第一衬底部分上,且所述第一金属线层部分的厚度大于或等于所述第二金属线层部分厚度,以使得所述金属线层的上表面平坦。
- 根据权利要求1所述的显示基板,其中,所述衬底包括聚酰亚胺、聚碳酸酯、聚丙烯酸酯、聚醚酰亚胺、聚醚砜、聚对苯二甲酸乙二醇酯和聚萘二甲酸乙二醇酯中的至少一种。
- 根据权利要求4或6所述的显示基板,其中,所述封装层由多个无机层和有机层交替沉积形成。
- 一种显示基板的制作方法,包括:提供衬底;在所述衬底上形成金属线层,以使得:所述金属线层的第一金属线层部分直接形成在所述衬底的第一衬底部分上,或者,所述金属线层的第一金属线层部分与所述衬底的第一衬底部分之间设置有有机缓冲层,所述第一金属线层部分直接设置在所述有机缓冲层上。
- 根据权利要求11所述的制作方法,其中,所述衬底还具有第二衬底部分,所述方法进一步包括:仅在所述第二衬底部分上设置无机绝缘层,以使得所述衬底的所述第二衬底部分与所述金属线层的第二金属线层部分之间设置有无机绝缘层。
- 根据权利要求11所述的制作方法,其中,所述衬底还具有第二衬底部分,所述方法进一步包括:在所述第一衬底部分和所述第二衬底部分上形成无机绝缘层;去除所述第一衬底部分上的无机绝缘层。
- 根据权利要求12所述的制作方法,其中,所述无机绝缘层包括无机缓冲层和栅绝缘层,所述金属线层为栅金属层,所述方法还包括:在所述栅金属层上依次形成层间绝缘层、钝化层、平坦层、像素限定 层及封装层。
- 根据权利要求14所述的制作方法,其中,所述层间绝缘层和所述钝化层为非连续的,以使得在所述第一金属线层部分上不具有层间绝缘层和钝化层。
- 根据权利要求12所述的制作方法,其中,所述无机绝缘层包括无机缓冲层、栅绝缘层和层间绝缘层,所述金属线层为源漏金属层,所述方法还包括:在所述源漏金属层上依次形成钝化层、平坦层、像素限定层及封装层。
- 根据权利要求16所述的制作方法,其中,所述钝化层为非连续的,以使得在所述第一金属线层部分上不具有钝化层。
- 根据权利要求14或16所述的制作方法,其中,形成所述封装层包括:交替沉积多个无机层和有机层,以形成所述封装层。
- 一种显示装置,其中,包括权利要求1至10任一项所述的显示基板。
- 一种显示装置的制作方法,其中,包括权利要求11至18中任一项所述的显示基板的制作方法。
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| US10256425B2 (en) | 2019-04-09 |
| CN104934438A (zh) | 2015-09-23 |
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