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WO2016002707A1 - Substrat d'oxyde de gallium et son procédé de production - Google Patents

Substrat d'oxyde de gallium et son procédé de production Download PDF

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Publication number
WO2016002707A1
WO2016002707A1 PCT/JP2015/068661 JP2015068661W WO2016002707A1 WO 2016002707 A1 WO2016002707 A1 WO 2016002707A1 JP 2015068661 W JP2015068661 W JP 2015068661W WO 2016002707 A1 WO2016002707 A1 WO 2016002707A1
Authority
WO
WIPO (PCT)
Prior art keywords
gallium oxide
oxide substrate
plane
cylindrical block
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2015/068661
Other languages
English (en)
Japanese (ja)
Inventor
優 山岡
建和 増井
嘉克 森島
康孝 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tamura Corp
Koha Co Ltd
Original Assignee
Tamura Corp
Koha Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tamura Corp, Koha Co Ltd filed Critical Tamura Corp
Publication of WO2016002707A1 publication Critical patent/WO2016002707A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H9/00—Machining specially adapted for treating particular metal objects or for obtaining special effects or results on metal objects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories

Definitions

  • the present invention relates to a gallium oxide substrate and a manufacturing method thereof.
  • Patent Document 1 it intersects at 90 ⁇ 5 degrees with respect to (100) of the gallium oxide substrate, and also intersects at 90 ⁇ 5 degrees with respect to the main surface constituted by the surface excluding (100).
  • a first orientation flat formed on the peripheral edge of the main surface 15 is formed within an error of ⁇ 5 degrees in rotation angle with a normal passing through the center point of the surface as the rotation axis, and further, the main orientation of the gallium oxide substrate is formed.
  • a second orientation flat is formed at the periphery of the other main surface with the center point of the surface as the symmetry point.
  • defects generated in the gallium oxide substrate can be removed by forming the first and second orientation flats on the gallium oxide substrate obtained by the circular punching of the gallium oxide single crystal by the core drill. Yes.
  • a defect-free gallium oxide substrate can be obtained by performing a circle punching process after performing a process for forming the first and second orientation flats on the gallium oxide single crystal.
  • An object of the present invention is to provide a gallium oxide substrate manufacturing method capable of obtaining a gallium oxide substrate from a gallium oxide single crystal ingot while suppressing the occurrence of defects, and a structure capable of suppressing the occurrence of defects during processing. It is to provide a gallium oxide substrate having the same.
  • One embodiment of the present invention provides a method for producing a gallium oxide substrate according to [1] to [5] in order to achieve the above object.
  • the main surface of the gallium oxide substrate is a surface different from the (100) surface, and the orientation flats are a first orientation flat and a second orientation flat provided at opposite positions on the side surface of the cylindrical block, respectively.
  • the first orientation flat and the second orientation flat are along a direction within ⁇ 2 ° with respect to a direction parallel to the intersection line between the main surface of the gallium oxide substrate and the (100) plane.
  • the gallium oxide substrate according to [2], wherein the gallium oxide substrate is provided with a length of 6 mm or more and at least one of peripheral grinding, beveling, polishing, and cleaning is applied to the gallium oxide substrate.
  • another aspect of the present invention provides a method for producing a gallium oxide substrate according to [6] below.
  • a manufacturing method of a gallium oxide substrate capable of obtaining a gallium oxide substrate from a gallium oxide single crystal ingot while suppressing the occurrence of defects, and a structure capable of suppressing the occurrence of defects during processing.
  • a gallium oxide substrate can be provided.
  • FIG. 1A is a perspective view schematically illustrating a state of circular punching of a gallium oxide ingot according to an embodiment.
  • FIG. 1B is a perspective view of a cylindrical block of a gallium oxide single crystal cut out by a circular punching process of a gallium oxide ingot.
  • FIG. 2A is a side view of a cylindrical block.
  • FIG. 2B is a side view of a gallium oxide substrate obtained by slicing a cylindrical block.
  • FIG. 3 is a plan view of the gallium oxide substrate.
  • FIG. 4A is a diagram schematically illustrating how a crack is generated in a gallium oxide substrate.
  • FIG. 4B is a diagram schematically illustrating how a crack is generated in the gallium oxide substrate.
  • FIG. 1A is a perspective view schematically showing a state of circular cutting of the gallium oxide ingot 2 according to the embodiment.
  • FIG. 1B is a perspective view of a cylindrical block 20 of a gallium oxide single crystal cut out by circular cutting of the gallium oxide ingot 2.
  • the circular cutting of the gallium oxide ingot 2 is performed by wire electric discharge machining using the wire electrode 1 as an electrode.
  • the wire electrode 1 In a state where a discharge is generated between the wire electrode 1 and the gallium oxide ingot 2, the wire electrode 1 is turned into the gallium oxide ingot 2 along the contour shape of the cylindrical block 20 as shown in FIGS. Move against. A portion of the gallium oxide ingot 2 adjacent to the wire electrode 1 is melted by electric discharge, and the cylindrical block 20 is cut out.
  • the wire electrode 1 is made of a conductive material such as brass or tungsten, and has a diameter of 0.02 to 0.36 mm, for example.
  • the gallium oxide ingot 2 to be processed also has conductivity, a discharge can be generated between the wire electrode 1 and the gallium oxide ingot 2.
  • the gallium oxide ingot 2 is, for example, a flat gallium oxide single crystal ingot grown by the EFG method.
  • the gallium oxide ingot 2 is separated from the seed crystal using a diamond blade, for example, after growth, after annealing for the purpose of relaxing thermal strain during growth and improving electrical characteristics.
  • the radial cross section (cross section parallel to the radial direction) of the cylindrical block 20 is a plane different from the (100) plane of the gallium oxide single crystal, for example, the ( ⁇ 201) plane, the (101) plane, or the (001) plane. Matches.
  • the gallium oxide single crystal has a high cleavage property in the (100) plane
  • the cylindrical block 20 is cut out from the gallium oxide ingot 2. , Defects such as cracks are likely to occur on the (100) plane.
  • the inventors of the present application have intensively studied to suppress the occurrence of this defect, and as a result, found that the occurrence of a defect in a cylindrical block can be suppressed by performing a circle punching process by wire electric discharge machining.
  • defects are generated in the cylindrical block when coring with a core drill or processing with a grinder. Although it is easy, generation
  • the gallium oxide ingot 2 is punched by wire electric discharge machining, the occurrence of defects such as cracks in the cylindrical block 20 can be suppressed.
  • the main surface becomes ( A gallium oxide substrate having a ⁇ 201) plane, a (101) plane, or a (001) plane can be obtained.
  • the main surface of the gallium oxide substrate is the ( ⁇ 201) surface or the (101) surface, the GaN-based semiconductor layer is easily epitaxially grown on the main surface, so that it can be used as an excellent substrate for a GaN-based semiconductor device.
  • the main surface of the gallium oxide substrate is the (001) surface, it is possible to homoepitaxially grow a high-quality Ga 2 O 3 based semiconductor layer on the main surface, so that it can be used as an excellent substrate for electronic devices. Can do.
  • the orientation flat of the cylindrical block 20 is the orientation flat of the gallium oxide substrate when the cylindrical block 20 is sliced to form a gallium oxide substrate.
  • the orientation flats 21 and 22 shown in FIG. 1B are examples of orientation flats, and there may be only one orientation flat.
  • the orientation flat can be formed on the cylindrical block 20 at the same time as the circular punching process, there is a possibility that defects are generated in the cylindrical block 20 as compared with the case where the circular punching process and the formation of the orientation flat are performed in separate processes. Can be made lower.
  • the orientation flat cannot be formed at the same time. It is necessary to form an orientation flat.
  • the orientation flat is formed using, for example, a slicing machine.
  • the single crystal has a highly cleaved surface, defects such as chipping may occur.
  • the orientation flats formed on the cylindrical block 20 are preferably the orientation flats 21 and 22 shown in FIGS. 1A and 1B. This is because by providing the orientation flats 21 and 22 on the gallium oxide substrate obtained from the cylindrical block 20, it is possible to suppress generation of defects in a process such as polishing. Details thereof will be described later. Orientation flats 21 and 22 are respectively provided at opposing positions on the side surface of the cylindrical block 20.
  • FIG. 2A is a side view of the cylindrical block 20
  • FIG. 2B is a side view of a gallium oxide substrate 30 obtained by slicing the cylindrical block 20.
  • FIG. 1A is a side view of the cylindrical block 20
  • FIG. 2B is a side view of a gallium oxide substrate 30 obtained by slicing the cylindrical block 20.
  • the gallium oxide substrate 30 is formed by slicing the cylindrical block 20 along its radial direction (direction perpendicular to the thickness direction). Therefore, the main surface 31 of the gallium oxide substrate 30 coincides with a surface other than the (100) plane, for example, the ( ⁇ 201) plane, the (101) plane, or the (001) plane.
  • the cylindrical block 20 may be sliced along a direction offset by a predetermined angle from the radial direction. Even in this case, the main surface 31 of the gallium oxide substrate 30 is sliced so as to coincide with a surface other than the (100) plane, for example, the ( ⁇ 201) plane, the (101) plane, or the (001) plane.
  • FIG. 3 is a plan view of the gallium oxide substrate 30.
  • the orientation flats 21 and 22 are provided at opposing positions, and are provided along directions within ⁇ 2 ° with respect to a direction parallel to the intersection line of the main surface 31 and the (100) plane. And has a length of 6 mm or more.
  • L2 and L3 in FIG. 3 represent the lengths of the orientation flats 21 and 22, respectively. That is, L2 and L3 are 6 mm or more.
  • L2 or L3 is 16 mm or more which is the length of a general orientation flat.
  • the surfaces of the orientation flats 21 and 22 are preferably perpendicular to the main surface 31 in the same manner as a general orientation flat surface.
  • the gallium oxide substrate 30 has the orientation flats 21 and 22, it is possible to suppress the occurrence of cracking (chipping) due to the force applied to the gallium oxide substrate 30 when performing peripheral grinding, beveling, polishing, or cleaning. The reason will be described below.
  • FIGS. 4A and 4B are diagrams schematically showing how a crack is generated in the gallium oxide substrate 30.
  • FIG. 4A and 4B are a plan view and a cross-sectional view of the gallium oxide substrate 30, respectively.
  • FIG. 4B shows a cross section of the gallium oxide substrate 30 having the main surface 31 of ( ⁇ 201) cut in a direction perpendicular to the b-axis of the gallium oxide single crystal.
  • a crack surface 40 shown in FIGS. 4A and 4B is a (100) surface where cracks are generated.
  • the length L0 of the edge on the main surface 31 is 5 mm or less due to external force applied in these steps.
  • Crack surface 40 is likely to occur.
  • the edge of the crack surface 40 on the main surface 31 is parallel to the line of intersection of the main surface 31 and the (100) surface.
  • the orientation flat 21 is provided along a direction within ⁇ 2 ° with respect to a direction parallel to the intersection line of the main surface 31 and the (100) plane, and has a length of 6 mm or more.
  • the cylindrical block 20 is sliced to a thickness of about 1 mm by, for example, a multi-wire saw, and the gallium oxide substrate 30 is obtained.
  • the wire saw is preferably a fixed abrasive type.
  • the slicing speed is preferably about 0.125 to 0.3 mm per minute.
  • annealing is performed on the gallium oxide substrate 30 for the purpose of relaxing processing strain, improving electrical characteristics, and improving permeability.
  • annealing is performed in an oxygen atmosphere when the temperature is raised, and annealing is performed in an inert atmosphere such as a nitrogen atmosphere, an argon atmosphere, or a helium atmosphere while the temperature is maintained after the temperature is raised.
  • the holding temperature is preferably 1400 to 1600 ° C.
  • the outer periphery of the gallium oxide substrate 30 is ground using a diamond grinding wheel until a desired outer size is obtained.
  • the grain size of the grindstone is preferably about # 400 to 1000 (specified by JISB4131). Since the gallium oxide substrate 30 has the orientation flats 21 and 22, the occurrence of cracks in this step is suppressed.
  • the edge of the gallium oxide substrate 30 is beveled (chamfered) at a desired angle. Since the gallium oxide substrate 30 has the orientation flats 21 and 22, the occurrence of cracks in this step is suppressed.
  • the main surface 31 of the gallium oxide substrate 30 is ground to a desired thickness using a diamond grinding wheel.
  • the grain size of the grindstone is preferably about # 800 to 1000 (specified by JISB4131). Since the gallium oxide substrate 30 has the orientation flats 21 and 22, the occurrence of cracks in this step is suppressed.
  • the main surface 31 of the gallium oxide substrate 30 is polished to a desired thickness using a polishing surface plate and diamond slurry.
  • the polishing surface plate is preferably made of a metal or glass material.
  • the particle size of the diamond abrasive grains contained in the diamond slurry is preferably about 0.5 ⁇ m. Since the gallium oxide substrate 30 has the orientation flats 21 and 22, the occurrence of cracks in this step is suppressed.
  • the main gallium oxide substrate 30 The surface 31 is polished.
  • the polishing cloth is preferably made of nylon, silk fiber, urethane or the like. It is preferable to use colloidal silica for the abrasive grains of the slurry. Since the gallium oxide substrate 30 has the orientation flats 21 and 22, the occurrence of cracks in this step is suppressed.
  • the gallium oxide substrate 30 is cleaned. Specifically, for example, ultrasonic cleaning for 3 minutes, ultrasonic cleaning for 3 minutes, ultrasonic cleaning for 3 minutes, cleaning with methanol for 5 minutes, washing with running water for 5 minutes, washing with sulfuric acid for 5 minutes, washing with running water for 5 minutes. Do it sequentially. Since the gallium oxide substrate 30 has the orientation flats 21 and 22, the occurrence of cracks in this step is suppressed.
  • the cylindrical block 20 of a gallium oxide single crystal with few defects can be obtained by performing the circular punching process of the gallium oxide ingot 2 by wire electric discharge machining.
  • a high-quality gallium oxide substrate 30 can be obtained by slicing the cylindrical block 20 of gallium oxide single crystal with few defects.
  • the orientation flat by forming the orientation flat at the same time as the circular punching process, it is possible to suppress the occurrence of defects in the cylindrical block as compared to the case where the orientation flat is formed in a separate process from the circular punching process.
  • orientation flats (orientation flats 21 and 22) satisfying predetermined conditions on the gallium oxide substrate 30
  • generation of cracks when the outer peripheral grinding, beveling, polishing, or cleaning is performed on the gallium oxide substrate 30 is suppressed. be able to.
  • a method of manufacturing a gallium oxide substrate capable of obtaining a gallium oxide substrate from a gallium oxide single crystal ingot while suppressing generation of defects, and a gallium oxide substrate having a structure capable of suppressing generation of defects during processing are provided. To do.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention concerne : un procédé de production de substrat d'oxyde de gallium, moyennant quoi l'apparition de défauts peut être réduite et un substrat d'oxyde de gallium peut être obtenu à partir d'un lingot d'oxyde de gallium monocristallin ; et un substrat d'oxyde de gallium ayant une structure permettant de réduire ainsi l'apparition de défauts au cours de l'usinage. Un mode de réalisation de la présente invention concerne un procédé de production d'un substrat d'oxyde de gallium comprenant : une étape dans laquelle, en conséquence de l'usinage par électro-érosion à fil, un bloc cylindrique (20) d'oxyde de gallium monocristallin, ayant une section transversale parallèle à la direction du diamètre qui est différente du plan (100), est découpé dans un lingot (2) d'oxyde de gallium monocristallin ; et une étape dans laquelle le bloc cylindrique (20) est découpé en tranches et un substrat d'oxyde de gallium (30) est obtenu.
PCT/JP2015/068661 2014-06-30 2015-06-29 Substrat d'oxyde de gallium et son procédé de production Ceased WO2016002707A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-135452 2014-06-30
JP2014135452A JP5816343B1 (ja) 2014-06-30 2014-06-30 酸化ガリウム基板及びその製造方法

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WO2016002707A1 true WO2016002707A1 (fr) 2016-01-07

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202242211A (zh) 2020-12-24 2022-11-01 日商三星鑽石工業股份有限公司 氧化鎵基板的加工方法
KR102527924B1 (ko) * 2022-09-14 2023-05-02 한국세라믹기술원 베타 산화갈륨의 분열 특성을 이용한 기계적 박리 방식의 전사 방법
JP2025016840A (ja) 2023-07-24 2025-02-05 株式会社ディスコ β酸化ガリウム基板の製造方法
CN117020898B (zh) * 2023-09-28 2023-12-26 和研半导体设备(沈阳)有限公司 一种划片机及半导体材料加工设备

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186589A (ja) * 2002-12-05 2004-07-02 Denso Corp 半導体基板の製造方法および製造装置
JP2008177233A (ja) * 2007-01-16 2008-07-31 Hitachi Cable Ltd 化合物半導体ウェハ及びその製造方法
JP2011068503A (ja) * 2009-09-24 2011-04-07 Sumitomo Electric Ind Ltd 窒化物半導体基板
WO2013035464A1 (fr) * 2011-09-08 2013-03-14 株式会社タムラ製作所 Structure stratifiée cristalline et son procédé de fabrication
JP2013067524A (ja) * 2011-09-21 2013-04-18 Namiki Precision Jewel Co Ltd 酸化ガリウム基板とその製造方法
JP2013237591A (ja) * 2012-05-16 2013-11-28 Namiki Precision Jewel Co Ltd 酸化ガリウム融液、酸化ガリウム単結晶、酸化ガリウム基板、および酸化ガリウム単結晶の製造方法
JP2014086458A (ja) * 2012-10-19 2014-05-12 Tamura Seisakusho Co Ltd 酸化ガリウム系基板の製造方法
JP2014221692A (ja) * 2013-05-13 2014-11-27 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶の育成方法、並びにβ−Ｇａ２Ｏ３系単結晶基板及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073761A (ja) * 2005-09-07 2007-03-22 Sumitomo Electric Ind Ltd 窒化物半導体基板及び窒化物半導体基板の加工方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186589A (ja) * 2002-12-05 2004-07-02 Denso Corp 半導体基板の製造方法および製造装置
JP2008177233A (ja) * 2007-01-16 2008-07-31 Hitachi Cable Ltd 化合物半導体ウェハ及びその製造方法
JP2011068503A (ja) * 2009-09-24 2011-04-07 Sumitomo Electric Ind Ltd 窒化物半導体基板
WO2013035464A1 (fr) * 2011-09-08 2013-03-14 株式会社タムラ製作所 Structure stratifiée cristalline et son procédé de fabrication
JP2013067524A (ja) * 2011-09-21 2013-04-18 Namiki Precision Jewel Co Ltd 酸化ガリウム基板とその製造方法
JP2013237591A (ja) * 2012-05-16 2013-11-28 Namiki Precision Jewel Co Ltd 酸化ガリウム融液、酸化ガリウム単結晶、酸化ガリウム基板、および酸化ガリウム単結晶の製造方法
JP2014086458A (ja) * 2012-10-19 2014-05-12 Tamura Seisakusho Co Ltd 酸化ガリウム系基板の製造方法
JP2014221692A (ja) * 2013-05-13 2014-11-27 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶の育成方法、並びにβ−Ｇａ２Ｏ３系単結晶基板及びその製造方法

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