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WO2016051771A1 - Structure de cible de pulvérisation cathodique et procédé de fabrication de structure de cible de pulvérisation cathodique - Google Patents

Structure de cible de pulvérisation cathodique et procédé de fabrication de structure de cible de pulvérisation cathodique Download PDF

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Publication number
WO2016051771A1
WO2016051771A1 PCT/JP2015/004941 JP2015004941W WO2016051771A1 WO 2016051771 A1 WO2016051771 A1 WO 2016051771A1 JP 2015004941 W JP2015004941 W JP 2015004941W WO 2016051771 A1 WO2016051771 A1 WO 2016051771A1
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WO
WIPO (PCT)
Prior art keywords
sputtering target
target structure
structure according
sprayed film
recesses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2015/004941
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English (en)
Japanese (ja)
Inventor
透 小松
信昭 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Niterra Materials Co Ltd
Original Assignee
Toshiba Corp
Toshiba Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Materials Co Ltd filed Critical Toshiba Corp
Priority to KR1020197010202A priority Critical patent/KR20190040103A/ko
Priority to JP2016551537A priority patent/JP6755802B2/ja
Priority to KR1020207031638A priority patent/KR20200128593A/ko
Priority to KR1020197010203A priority patent/KR20190040104A/ko
Priority to KR1020197010201A priority patent/KR20190040377A/ko
Priority to KR1020177004466A priority patent/KR20170032427A/ko
Publication of WO2016051771A1 publication Critical patent/WO2016051771A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/06—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for producing matt surfaces, e.g. on plastic materials, on glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C7/00—Equipment for feeding abrasive material; Controlling the flowability, constitution, or other physical characteristics of abrasive blasts
    • B24C7/0007—Equipment for feeding abrasive material; Controlling the flowability, constitution, or other physical characteristics of abrasive blasts the abrasive material being fed in a liquid carrier
    • B24C7/0015—Equipment for feeding abrasive material; Controlling the flowability, constitution, or other physical characteristics of abrasive blasts the abrasive material being fed in a liquid carrier with control of feed parameters, e.g. feed rate of abrasive material or carrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C7/00—Equipment for feeding abrasive material; Controlling the flowability, constitution, or other physical characteristics of abrasive blasts
    • B24C7/0046—Equipment for feeding abrasive material; Controlling the flowability, constitution, or other physical characteristics of abrasive blasts the abrasive material being fed in a gaseous carrier
    • B24C7/0053—Equipment for feeding abrasive material; Controlling the flowability, constitution, or other physical characteristics of abrasive blasts the abrasive material being fed in a gaseous carrier with control of feed parameters, e.g. feed rate of abrasive material or carrier
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06—Metallic material
    • C23C4/08—Metallic material containing only metal elements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/129—Flame spraying
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/131—Wire arc spraying
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/18—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape

Definitions

  • One embodiment of the present invention relates to a sputtering target structure and a method for manufacturing the sputtering target structure.
  • the width of metal wiring such as Al and Cu becomes narrower.
  • the memory wiring width is reduced from 19 nm to 15 nm, and further to 10 nm.
  • fine particles having a diameter of 0.2 ⁇ m or less which has not been attracting attention in the past, may cause wiring defects or element defects.
  • the generation of finer particles (size 0.2 ⁇ m or less) than before must be reduced.
  • the components of the sputtered sputtering target are reattached to the sputtering target itself to form a film.
  • the coating film peels off and drops off as particles on a semiconductor substrate or the like.
  • the particles are one of the causes of defective electronic components.
  • the surface of the region where the component reattaches is roughened by blasting to increase the adhesion of the reattachment film, or spraying or PVD (Physical Examples thereof include a method of increasing the adhesion of the reattached film by forming a film in a region where the target component is reattached by vapor deposition (PVD) or CVD (Chemical Vapor Deposition: CVD).
  • JP-A-9-287072 Japanese Patent No. 3895277 Japanese Patent No. 3791829 Japanese Patent No. 4820508
  • One of the problems to be solved by one embodiment of the present invention is to reduce particles.
  • the sputtering target structure of the present embodiment includes a sputtering target and a backing plate that holds the sputtering target. At least one surface of the surface of the sputtering target and the surface of the backing plate includes a region including a plurality of recesses having an average diameter of 50 ⁇ m to 300 ⁇ m and an average depth of 5 ⁇ m to 30 ⁇ m.
  • the arithmetic average roughness Ra of the surface of the region including the plurality of dents is 10 ⁇ m or more and 20 ⁇ m or less.
  • FIG. 1 is a schematic cross-sectional view showing a partial structure example of a sputtering target structure.
  • the sputtering target structure shown in FIG. 1 includes a sputtering target 1 and a backing plate 2 that holds the sputtering target 1.
  • At least one surface of the surface of the sputtering target 1 and the surface of the backing plate 2 has a region 3 including a plurality of recesses.
  • the region 3 is a region where the constituent components of the sputtering target 1 are reattached during sputtering.
  • the sputtering target 1 has a region 3a on the side surface
  • the backing plate 2 has a region 3b on the upper surface.
  • the region 3a and the region 3b may be provided so as to be continuous.
  • the at least one planar shape of the plurality of dents may have a circular shape, for example.
  • At least one of the plurality of recesses may have, for example, a partial spherical shape or a cup shape.
  • the bottom surface of the dent is a curved surface convex downward.
  • the plurality of recesses may be provided in at least one of the region 3a and the region 3b.
  • the arithmetic average roughness Ra of the region 3 is 20 ⁇ m or less.
  • the arithmetic average roughness Ra is 20 ⁇ m or less, it is possible to improve the adhesion of the deposits attached to the region 3. Therefore, peeling of the reattachment film is effectively suppressed, and particles can be reduced.
  • the arithmetic average roughness Ra exceeds 20 ⁇ m, the film protrusion of the reattached film due to the sharp convex portion on the surface is easily formed. In the vicinity of the film protrusion, unstablely deposited fine particles are exposed. When the fine particles fall off due to thermal changes caused by plasma during sputtering, particles are likely to be generated.
  • the arithmetic average roughness Ra of the region 3a and the region 3b is more preferably 10 ⁇ m or more and 20 ⁇ m or less.
  • the average diameter of the plurality of recesses is preferably 50 ⁇ m or more and 300 ⁇ m or less.
  • the average depth of the plurality of recesses is preferably 5 ⁇ m or more and 30 ⁇ m or less.
  • FIG. 2 is a schematic cross-sectional view showing another example of the structure of the sputtering target structure.
  • the sputtering target structure shown in FIG. 2 is different from the sputtering target structure shown in FIG. 1 in that the backing plate 2 has a thermal spray film 4.
  • the sprayed film 4 has a region 3b on the surface.
  • the sprayed film 4 may be provided on at least one surface of the main body portion of the sputtering target 1 and the main body portion of the backing plate 2.
  • the thickness of the sprayed film 4 is preferably 50 ⁇ m or more.
  • the thickness of the sprayed film 4 is more preferably 100 ⁇ m or more and 500 ⁇ m or less, and further preferably 150 ⁇ m or more and 250 ⁇ m or less.
  • the sprayed film 4 has a structure including a plurality of particles, for example.
  • the average particle diameter of the plurality of particles is preferably 5 ⁇ m or more and 150 ⁇ m or less.
  • the relative density of the sprayed film 4 is preferably 75% or more and 99% or less.
  • the relative density exceeds 99% or the average particle diameter is less than 5 ⁇ m, cracks are easily generated between the particles due to the stress applied to the sprayed film 4. Therefore, the stress relaxation ability may decrease and the coating may peel off.
  • the relative density is less than 75% or when the average particle diameter exceeds 150 ⁇ m, the unevenness of the surface of the sprayed film 4 becomes remarkable. Therefore, dust (particles) due to the protrusions is likely to be generated from the surface of the deposit that is deposited according to the surface state of the sprayed film 4.
  • the relative density of the sprayed film 4 is more preferably 97% or more and 99% or less.
  • the relative density of the sprayed film 4 is obtained by the following method.
  • the cross-sectional structure cut in the film thickness direction of the sprayed film 4 is observed with an optical microscope at a magnification of 500 times.
  • the area of the hole is measured with a visual field of 210 ⁇ m in length and 270 ⁇ m in width. It converts as relative density (%) from the following (1) formula.
  • the average value of the relative densities of the 10 visual fields is the relative density of the sprayed film 4.
  • Relative density (%) ⁇ (S1-S2) / S1 ⁇ ⁇ 100 (1) (Where S1 is the area ( ⁇ m 2 ) of 210 ⁇ m long ⁇ 270 ⁇ m wide field of view, and S2 is the total area of pores ( ⁇ m 2 ) within the 210 ⁇ m ⁇ 270 ⁇ m wide field of view)
  • the sprayed film 4 is formed by appropriately selecting plasma spraying or arc spraying.
  • the thermal spray material include powder and wire. At this time, a material having a powder particle diameter or a wire diameter adjusted to control Ra to 20 ⁇ m or less is used.
  • thermal spraying method it is possible to obtain a thermal spray film 4 having a film structure in which flat particles are deposited by melting a supply powder or a wire with a heat source by plasma discharge or arc discharge.
  • a porous sprayed film 4 in which the supplied powder exists as granular or elliptical particles can be obtained.
  • the present invention is not limited to this, and the sprayed film may be formed by using flame spraying in which a supply gas or a wire is blown in a molten state using a combustion gas as a heat source.
  • the sputtering target structure includes a region having a plurality of depressions on at least one of the surface of the sputtering target 1 and the surface of the backing plate 2.
  • the arithmetic average roughness Ra of the region is 20 ⁇ m or less.
  • the inventor of the present application analyzed the components of fine particles, repeatedly investigated and verified the occurrence positions of fine particles on the sputtering target, and conducted intensive trial manufacture and examination. As a result, the state of the target surface (surface roughness, surface shape), the type of media used for blasting, and the unstable part of the re-deposited film on the sprayed film are related to the generation of fine particles. I found.
  • the generation of minute particles is reduced, and the occurrence of defective wiring and defective elements is suppressed. Therefore, the manufacturing yield of electronic components can be greatly improved. Further, since peeling of the film of the film forming material is effectively suppressed over a long period of time, the frequency of cleaning the film forming apparatus and replacing component parts is reduced, and the operation management of the film forming apparatus becomes extremely easy. Further, the productivity of the film product can be increased, and the film formation cost can be reduced.
  • the manufacturing step includes a step of plastically forming at least one of the surface of the sputtering target 1 and the surface of the backing plate to form a plurality of recesses.
  • the surface roughness of the sprayed film 4 can be adjusted to a predetermined range only by the spraying process.
  • fine irregularities and cavities are likely to be formed on the surface of the sprayed film 4, and abnormally grown portions of the reattached film are likely to be formed starting from the irregularities and cavities. Since this abnormally grown portion is unstable, it tends to fall off from the surface portion of the sprayed film 4 and easily generate particles. Therefore, it is preferable to eliminate defects such as irregularities and cavities by plastic working the surface of the sprayed film 4.
  • the ball shot process is a process in which round ball-shaped metal fine abrasive grains are collided with the surface of a material to be processed (a sputtering target, a backing plate, a sprayed film, or the like) together with a high-pressure fluid.
  • a dent can be formed without leaving abrasive grains on the surface of the material to be processed and without damaging the surface of the material to be processed (formation of a crushed layer).
  • the shape (diameter, depth, etc.) of the plurality of recesses is adjusted by controlling processing conditions such as the ball diameter of the ball-shaped abrasive grains, the spray distance of the ball-shaped abrasive grains, the spray pressure, and the spray time.
  • FIG. 3 is a schematic cross-sectional view for explaining an example of ball shot processing.
  • hard balls 5 are injected from the injection nozzle 6 onto at least one surface of the surface of the sputtering target 1 and the surface of the backing plate 2.
  • FIG. 4 is a schematic cross-sectional view for explaining another example of the ball shot process.
  • the sprayed film 4 is provided, hard balls 5 are ejected from the spray nozzle 6 onto the surface of the sprayed film 4.
  • Examples of the hard ball 5 include a spherical ball made of ordinary steel, stainless steel, or a ceramic material.
  • the spherical ball is not easily damaged even when it receives a strong impact force from injection. Therefore, it can be used repeatedly.
  • the diameter of the hard ball 5 is preferably 2 mm or less, and more preferably 0.4 mm or more and 0.8 mm or less.
  • the diameter of the hard ball 5 exceeds 2 mm, for example, it is difficult to make the ball collide with the concave portion on the surface of the sprayed film 4, and a portion where the sprayed form remains is generated, and the entire surface is not uniform.
  • the spray pressure in the ball shot process may be any pressure that allows the hard ball 5 to spray while having a uniform momentum.
  • the spraying pressure is preferably 5 kg / cm 2 or less.
  • the spray pressure exceeds 5 kg / cm 2 , for example, the surface of the sprayed film 4 is extremely plastically deformed, and it becomes difficult to obtain a desired surface roughness.
  • the spray pressure is excessively low, the hard ball 5 is not stably ejected, so the surface of the sprayed film 4 is not completely smooth, and the sprayed form remains on the surface of the sprayed film 4 and is uneven. It becomes a form and the productivity of the film is reduced.
  • the stress is relieved by plastic processing of the sprayed film 4 by ball shot processing. Therefore, the lifetime of the component can be extended and particles can be reduced.
  • the surface portion of the sprayed film 4 is deformed, and a large number of recesses 7 having a curved surface corresponding to the outer surface shape of the ball are formed as shown in FIG.
  • the diameter D and depth d of the recess 7 can be controlled by adjusting the shot conditions such as the ball diameter and the ejection pressure. The same applies to the case where there is no sprayed coating shown in FIG.
  • Average diameter and average depth of multiple dents are defined as follows. In the cross-sectional structure photograph obtained by observing the cross-sectional structure of the region 3 with an electron microscope or the like, five dents 7 adjacent to each other in the unit region are arbitrarily selected, and the diameter D and depth d of each dent 7 are selected. Measure. The average value of the measured diameter D is the average diameter, and the average value of the measured depth d is the average depth.
  • ⁇ Ball shot processing and dry ice shot processing may be used in combination.
  • the dry ice shot process is a process of cleaning the surface by spraying dry ice pellets. In dry ice shot processing, it is possible to remove the foreign matter remaining when ball shot processing is performed on the surface of the ball shot processing material (target backing plate, sprayed film) in a short time with the sublimation energy of dry ice, The dent by the clean ball shot process can be maintained.
  • the dry ice shot treatment may be performed after spraying.
  • particles such as scattered particles remain on the surface of the sprayed film 4.
  • the ball shot process is performed in the state as it is, there is a possibility that there is a coating that is very easily peeled off with scattered particles being crushed on the ball shot process surface. Therefore, by first performing the dry ice shot process on the sprayed film 4, the scattered particles that easily fall off are removed, and the formation of abnormal portions that are easily peeled off after the ball shot process can be reduced.
  • Examples 1 to 6 Sputtering target structures of Examples 1 to 6 were produced.
  • the material of the sputtering target and the thickness of the sprayed film are as shown in Table 1.
  • the material of the backing plate used in Examples 1 to 6 is an aluminum alloy.
  • regions including a plurality of dents were formed on the surface of the sputtering target and the surface of the backing plate by ball shot processing without forming a sprayed film.
  • an arc Al sprayed film was formed on the surface of the main body of the backing plate, and the surface of the sputtering target and the surface of the backing plate (sprayed by ball shot processing and dry ice shot processing). A region including a plurality of dents was formed on the surface of the membrane.
  • a stainless steel ball having a diameter of 0.8 mm was ejected from an ejection nozzle at an ejection pressure of 5 kg / cm 2 and collided with the surface of a sputtering target and the surface of a backing plate.
  • Table 2 shows the arithmetic average roughness Ra (recess Ra), the average recess diameter, and the average recess depth of each of the obtained sputtering targets. Furthermore, in the sputtering target structures of Examples 1 to 6 and Comparative Examples 1 to 6, the number of dusts having a diameter of 0.2 ⁇ m or more mixed on the 12-inch wafer surface was measured with a particle counter (WM-3). The measurement results are shown in Table 2.
  • the amount of generated particles is larger than that of the sputtering target structure of the comparative example. Can be greatly reduced. Also, the generation of particles can be effectively and stably prevented by the sprayed film formed in each embodiment.
  • the material of the backing plate used in Examples 1 to 6 and Comparative Examples 1 to 6 was an aluminum alloy, but the same effect was obtained even when a copper alloy was used as the backing plate.
  • the deposits remaining on the surface of the sprayed film immediately after the formation of the sprayed film or immediately after the ball shot can be effectively removed. Therefore, the abnormally grown deposits are effectively prevented from falling off. Therefore, it was proved that the number of dusts such as particles mixed on the wafer can be further reduced.
  • the relative density of the sprayed film of the sputtering target structures according to Examples 3 to 6 was measured, all were in the range of 91% to 99%.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

La présente invention réduit des particules. L'invention concerne une structure de cible de pulvérisation cathodique, pourvue d'une cible de pulvérisation cathodique et d'une plaque de support qui maintient la cible de pulvérisation cathodique. La surface de la cible de pulvérisation cathodique et/ou la surface de la plaque de support sont dotées d'une zone comprenant une pluralité de creux ayant un diamètre moyen de 50 à 300 µm et une profondeur moyenne de 5 à 30 µm. La rugosité moyenne arithmétique Ra de la surface de la zone comprenant les creux est de 10 à 20 µm.
PCT/JP2015/004941 2014-09-30 2015-09-29 Structure de cible de pulvérisation cathodique et procédé de fabrication de structure de cible de pulvérisation cathodique Ceased WO2016051771A1 (fr)

Priority Applications (6)

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KR1020197010202A KR20190040103A (ko) 2014-09-30 2015-09-29 스퍼터링 타깃 구조체
JP2016551537A JP6755802B2 (ja) 2014-09-30 2015-09-29 スパッタリングターゲット構造体およびスパッタリングターゲット構造体の製造方法
KR1020207031638A KR20200128593A (ko) 2014-09-30 2015-09-29 스퍼터링 타깃 구조체의 제조 방법
KR1020197010203A KR20190040104A (ko) 2014-09-30 2015-09-29 전자 부품의 제조 방법
KR1020197010201A KR20190040377A (ko) 2014-09-30 2015-09-29 스퍼터링 타깃 구조체의 제조 방법
KR1020177004466A KR20170032427A (ko) 2014-09-30 2015-09-29 스퍼터링 타깃 구조체 및 스퍼터링 타깃 구조체의 제조 방법

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JP2014-202643 2014-09-30
JP2014202643 2014-09-30

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WO2016051771A1 true WO2016051771A1 (fr) 2016-04-07

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WO2018111593A1 (fr) * 2016-12-15 2018-06-21 Honeywell International Inc. Piège à pulvérisation présentant une distribution granulométrique multimodale
CN113684441A (zh) * 2021-08-27 2021-11-23 江阴恩特莱特镀膜科技有限公司 一种电弧喷枪

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KR102245912B1 (ko) * 2019-07-22 2021-05-03 주식회사 싸이노스 아크 코팅공정에서의 파티클 감소방법 및 이에 의한 코팅층을 갖는 반도체 제조공정의 스퍼터링 장치

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WO2002040733A1 (fr) * 2000-11-17 2002-05-23 Nikko Materials Company, Limited Cible de pulverisation produisant peu de particules, plaque support ou appareil de pulverisation, et procede de pulverisation produisant peu de particules
WO2008117482A1 (fr) * 2007-03-22 2008-10-02 Kabushiki Kaisha Toshiba Partie d'un appareil de formation de pellicule sous vide et appareil de formation de pellicule sous vide

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JP4551561B2 (ja) * 1999-12-28 2010-09-29 株式会社東芝 真空成膜装置用部品とそれを用いた真空成膜装置、およびターゲット装置
JP3791829B2 (ja) 2000-08-25 2006-06-28 株式会社日鉱マテリアルズ パーティクル発生の少ないスパッタリングターゲット

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WO2008117482A1 (fr) * 2007-03-22 2008-10-02 Kabushiki Kaisha Toshiba Partie d'un appareil de formation de pellicule sous vide et appareil de formation de pellicule sous vide

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018111593A1 (fr) * 2016-12-15 2018-06-21 Honeywell International Inc. Piège à pulvérisation présentant une distribution granulométrique multimodale
US10655212B2 (en) 2016-12-15 2020-05-19 Honeywell Internatonal Inc Sputter trap having multimodal particle size distribution
JP2020514526A (ja) * 2016-12-15 2020-05-21 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． 多峰性の粒径分布を有するスパッタトラップ
US10968510B2 (en) 2016-12-15 2021-04-06 Honeywell International Inc. Sputter trap having multimodal particle size distribution
TWI762537B (zh) * 2016-12-15 2022-05-01 美商哈尼威爾國際公司 具有多峰性粒徑分佈之濺鍍阱
JP7094285B2 (ja) 2016-12-15 2022-07-01 ハネウェル・インターナショナル・インコーポレーテッド 多峰性の粒径分布を有するスパッタトラップ
CN113684441A (zh) * 2021-08-27 2021-11-23 江阴恩特莱特镀膜科技有限公司 一种电弧喷枪
CN113684441B (zh) * 2021-08-27 2023-04-07 江阴恩特莱特镀膜科技有限公司 一种电弧喷枪

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JP2020204095A (ja) 2020-12-24
JP6755802B2 (ja) 2020-09-16
JP6946529B2 (ja) 2021-10-06
KR20200128593A (ko) 2020-11-13
KR20190040104A (ko) 2019-04-16
KR20190040377A (ko) 2019-04-17
JPWO2016051771A1 (ja) 2017-07-13
KR20170032427A (ko) 2017-03-22

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