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WO2015115166A1 - Système de traitement de substrat, procédé de traitement de substrat, et support de stockage informatique - Google Patents

Système de traitement de substrat, procédé de traitement de substrat, et support de stockage informatique Download PDF

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Publication number
WO2015115166A1
WO2015115166A1 PCT/JP2015/050648 JP2015050648W WO2015115166A1 WO 2015115166 A1 WO2015115166 A1 WO 2015115166A1 JP 2015050648 W JP2015050648 W JP 2015050648W WO 2015115166 A1 WO2015115166 A1 WO 2015115166A1
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WIPO (PCT)
Prior art keywords
substrate
exposure
processing
light irradiation
post
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Ceased
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PCT/JP2015/050648
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English (en)
Japanese (ja)
Inventor
誠司 永原
豪介 白石
志村　悟
吉原　孝介
真一路 川上
勝 友野
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • H10P72/0436—

Definitions

  • the present invention relates to a substrate processing system for processing a substrate, a substrate processing method in the substrate processing system, and a computer storage medium.
  • a resist film is formed as a photosensitive film on a substrate such as a semiconductor wafer (hereinafter referred to as a “wafer”), and then the resist film is subjected to an exposure process and a development process. Thus, a predetermined resist pattern is formed on the substrate.
  • the exposure apparatus using EUV light since the exposure apparatus using EUV light is very expensive, it is preferable to reduce the exposure time of the exposure apparatus per wafer from the viewpoint of reducing the manufacturing cost.
  • EUV light since EUV light has a lower energy than an ArF laser or the like, the exposure time becomes longer when EUV exposure is adopted. As a result, the throughput is lowered and the productivity is lowered and the manufacturing cost is increased.
  • the present invention has been made in view of such a point, and an object of the present invention is to suitably form a fine pattern on a substrate while suppressing a decrease in throughput even in a photolithography process using EUV light.
  • the present invention provides a substrate processing system for processing a substrate, a processing station provided with a plurality of processing apparatuses for performing development processing and heating processing on the substrate, and an outside of the substrate processing system.
  • An exposure apparatus that exposes a pattern to a resist film on the substrate, an interface station that delivers the substrate between the substrate processing systems, and a substrate on which the pattern is exposed by the exposure apparatus
  • a light irradiation device for performing post-exposure with UV light on the resist film
  • An inspection apparatus for inspecting a substrate that has been post-exposed by the light irradiation apparatus and then developed, and a control unit.
  • control unit is configured to perform heating temperature in the heat treatment of the substrate in the processing station, focus or exposure amount in the exposure apparatus, exposure amount in the light irradiation apparatus. Alternatively, at least one of the wavelengths of the UV light used in the light irradiation device is corrected.
  • the resist film on the substrate after the pattern exposure is first provided with the light irradiation device for performing the post exposure by the UV light, for example, the EUV light having a weak energy for the pattern exposure is used. Even if it is used, after the exposure of the pattern, energy is supplementarily applied by irradiation with UV light to decompose the acid generator in the resist film to generate an acid or to generate a radical component. Can be promoted. Therefore, the exposure time can be shortened compared to the case where the exposure process is performed by EUV exposure alone, and a fine pattern can be formed by adopting EUV exposure while suppressing a decrease in throughput. In addition, since the heating temperature, the exposure amount, the wavelength of the UV light used in the light irradiation apparatus, and the like are corrected based on the inspection result of the developed substrate, a fine pattern can be formed with higher accuracy.
  • a substrate processing method in a substrate processing system for processing a substrate wherein the substrate processing system includes a processing station provided with a plurality of processing apparatuses for performing development processing and heat processing on a substrate; An exposure apparatus that is provided outside the substrate processing system and exposes a pattern on a resist film on the substrate; an interface station that delivers the substrate between the substrate processing systems; and the exposure apparatus performs pattern exposure.
  • a light irradiation device that performs post-exposure with UV light on the resist film on the substrate after being formed, and an inspection device that inspects the substrate that has been post-exposed by the light irradiation device and then developed.
  • the exposure apparatus exposes a pattern on a resist film on the substrate, and the light irradiation apparatus performs exposure after the exposure on the substrate.
  • Post-exposure is performed on the dyst film
  • heat treatment and development processing are performed on the post-exposure substrate at the processing station
  • the substrate is inspected by the inspection apparatus, and the processing is performed based on the inspection result.
  • Another aspect of the present invention is a substrate processing method for processing a substrate on which a resist film is formed, wherein an exposure process for exposing a pattern to the resist film on the substrate and the exposure of the pattern are performed.
  • a post-exposure process for performing post-exposure with UV light on a resist film on a subsequent substrate, a heat-treatment process for performing heat treatment on the post-exposure substrate, and developing the resist film after the heat treatment A development processing step for forming a resist pattern on the substrate, and an inspection step for inspecting the resist pattern on the substrate after the development processing, and heating the substrate in the heat treatment step based on the inspection result of the substrate
  • a readable computer storage medium storing a program that operates on a computer of a control device that controls the substrate processing system so that the substrate processing method is executed by the substrate processing system.
  • the substrate processing system includes a processing station provided with a plurality of processing apparatuses that perform development processing and heat processing on a substrate, and an exposure apparatus that is provided outside the substrate processing system and exposes a pattern on a resist film on the substrate.
  • an interface station that delivers the substrate between the substrate processing systems, and a light irradiation device that performs post-exposure with UV light on a resist film on the substrate after pattern exposure is performed by the exposure device And an inspection device for inspecting a substrate that has been post-exposed by the light irradiation device and subsequently developed.
  • the substrate processing method the resist film on the substrate is exposed by the exposure apparatus, the post-exposure is performed on the exposed resist film on the substrate by the light irradiation apparatus, and the post exposure is performed by the processing station.
  • Heat treatment and development processing are performed on the subsequent substrate, the substrate is inspected by the inspection apparatus, and based on the inspection result, the heating temperature in the heat treatment of the substrate at the processing station, the exposure apparatus At least one of a focus or an exposure amount, an exposure amount in the light irradiation device, and a wavelength of UV light used in the light irradiation device is corrected.
  • a fine pattern can be suitably formed on a substrate while suppressing a decrease in throughput even in a photolithography process using EUV light.
  • FIG. 1 is an explanatory view schematically showing an outline of a configuration of a coating and developing treatment system 1 as a substrate processing system according to the present embodiment.
  • 2 and 3 are a front view and a rear view, respectively, schematically showing the outline of the internal configuration of the coating and developing treatment system 1.
  • the coating and developing treatment system 1 includes a cassette station 10 in which a cassette C containing a plurality of wafers W is loaded and unloaded, and a processing station having a plurality of various processing devices for performing predetermined processing on the wafers W. 11, an interface station 12 provided adjacent to the processing station 11, a post-exposure station 13 for performing post-exposure on the wafer after pattern exposure, and an interface station 14 connected to the post-exposure station 13. .
  • an exposure device 15 that performs pattern exposure on the wafer W is provided adjacently.
  • the interface station 14 delivers the wafer W to and from the exposure apparatus 15.
  • the exposure apparatus 15 is provided with an exposure stage 15a that exposes a pattern to the wafer W after resist formation with EUV light.
  • the cassette station 10 is provided with a plurality of cassette mounting plates 21 on which a cassette C is placed and a wafer transfer device 23 that is movable on a transfer path 22 extending in the X direction. It has been.
  • the wafer transfer device 23 is also movable in the vertical direction and the vertical axis ( ⁇ direction), and between the cassette C on each cassette mounting plate 21 and a transfer device of a transfer block G3 of the processing station 11 described later. Can transfer the wafer W.
  • the processing station 11 is provided with a plurality of, for example, four blocks G1, G2, G3, and G4 having various devices.
  • a plurality of liquid processing apparatuses for example, a lower antireflection film that forms an antireflection film (hereinafter referred to as a “lower antireflection film”) below the resist film of the wafer W.
  • Forming device 30 resist coating device 31 for applying a resist solution to wafer W to form a resist film, and upper antireflection film for forming an antireflection film (hereinafter referred to as "upper antireflection film") on the resist film of wafer W
  • the film forming apparatus 32 and the development processing apparatus 33 for developing the wafer W are stacked in, for example, four stages from the bottom.
  • Each of the devices 30 to 33 in the first block G1 has a plurality of cups F, for example, four cups F, for accommodating the wafers W during processing, and can process the plurality of wafers W in parallel.
  • a heat treatment apparatus 40 for performing heat treatment of the wafer W an adhesion apparatus 41 as a hydrophobic treatment apparatus for hydrophobizing the wafer W, and an outer peripheral portion of the wafer W are exposed.
  • Peripheral exposure devices 42 are arranged side by side in the vertical and horizontal directions.
  • the heat treatment apparatus 40 includes a hot plate for placing and heating the wafer W and a cooling plate for placing and cooling the wafer W, and can perform both heat treatment and cooling treatment.
  • the delivery block G3 is provided with a plurality of delivery devices 50, 51, 52, 53, 54, 55, 56 in order from the bottom.
  • the delivery block G4 is provided with a plurality of delivery devices 60, 61, 62 in order from the bottom.
  • a wafer transfer mechanism 70 is provided next to the delivery block G3 on the positive side in the Y direction.
  • the wafer transfer mechanism 70 has a transfer arm that is movable in the Y direction, the ⁇ direction, and the vertical direction, for example.
  • Wafer inspection devices 71 and 72 are provided on both the X direction positive side and the negative direction side of the wafer transfer mechanism 70 with the wafer transfer mechanism 70 interposed therebetween.
  • wafer placement units 73 and 74 for temporarily storing a plurality of wafers W are provided.
  • the wafer placement unit 73 is disposed closer to the second block G2, and the wafer placement unit 74 is disposed closer to the first block G1.
  • the wafer transfer mechanism 70 moves up and down while supporting the wafer W, and moves the wafer W between the transfer devices, the wafer inspection devices 71 and 72, and the wafer placement units 73 and 74 in the transfer block G3. Can be transported.
  • the wafer inspection apparatus 71 in this embodiment measures, for example, the line width and sidewall angle of a pattern formed on the wafer W.
  • the wafer inspection device 72 measures, for example, an overlay error between an already formed pattern and a pattern exposed thereafter.
  • a wafer transfer area D is formed in an area between the first block G1 and the second block G2.
  • a plurality of wafer transfer mechanisms 80 are arranged in the wafer transfer area D.
  • the wafer transfer mechanism 80 has a transfer arm that is movable in the Y direction, the X direction, the ⁇ direction, and the vertical direction, for example.
  • the wafer transfer mechanism 80 moves within the wafer transfer area D, and includes a predetermined transfer device and wafer mounting unit 73 in the transfer block G4 in the interface block 12 and the surrounding first block G1, the second block G2, and the like.
  • the wafer W can be transferred to 74.
  • the interface station 12 includes the transfer block G4 having the transfer devices 60, 61 and 62, and the wafer transfer mechanism 90 capable of transferring the wafer W to and from the plurality of transfer devices 60, 61 and 62.
  • the wafer transfer mechanism 90 has an arm that is movable in the X direction, the Y direction, the ⁇ direction, and the vertical direction, for example.
  • a load lock chamber 100 is provided at a position accessible by the wafer transfer mechanism 90 of the interface station 12.
  • a wafer transfer mechanism 101 is provided at a position accessible to the load lock chamber 100.
  • a light irradiation device 102 as a device for performing post exposure by irradiating the wafer after pattern exposure with UV light and the wafer W are temporarily accommodated.
  • a wafer mounting unit 103 (buffer) is provided.
  • the light irradiation device 102 includes a mounting table 104 on which the wafer W is mounted, and a light irradiation unit that irradiates the wafer W on the mounting table 104 with UV light having a predetermined wavelength.
  • the light irradiation unit 105 in the present embodiment is configured as a so-called batch exposure type apparatus that collectively exposes the entire surface of the resist film R formed on the wafer W.
  • the light irradiation unit 105 includes a plurality of straight tube-shaped light sources 106 that are longer than the diameter of the wafer W, for example.
  • the light sources 106 are arranged side by side without a gap so as to cover the entire upper surface of the wafer W, for example.
  • Each light source 106 emits UV light toward the wafer W.
  • the wavelength of the UV light is, for example, 220 to 370 nm, and various wavelength bands, for example, 222 nm, 248 nm, or 254 nm are used in accordance with the sensitivity of the resist to be used.
  • the light irradiation unit 105 may adopt a configuration in which, for example, a linear light source is used, and the UV light is scanned on the wafer W by moving or rotating the wafer W or at least one of the light sources.
  • the light irradiation unit 105 a light irradiation device configured to perform post-exposure by irradiating UV light one shot at a time according to the pattern exposure shot size in the exposure device 15 may be adopted.
  • the post-exposure station 13 is configured to be airtight, and can be depressurized to a predetermined degree of depressurization, for example, 10 ⁇ 4 Pa to 10 ⁇ 7 Pa by a decompression device (not shown). As a result, during UV light irradiation or movement in the post-exposure station 13, it is possible to suppress the deactivation of acids and radicals due to amine components and oxygen contained in a trace amount in the air. Further, since the post-exposure station 13 is configured to be airtight, the post-exposure station 13 is maintained in a low-oxygen atmosphere by sealing a non-oxidizing gas such as nitrogen instead of reducing the pressure. Also good.
  • the interface station 14 connected to the post exposure station 13 is also airtight.
  • a delivery device 110 having a mounting table or the like is provided at a position accessible by the wafer transfer mechanism 101 of the post exposure station 13.
  • a wafer transfer mechanism 112 that transfers the wafer W of the transfer device 110 to and from the load lock chamber 111 is provided.
  • the load lock chamber 111 of the interface station 14 is connected to the exposure apparatus 15.
  • the load lock chamber 111 relays between the interface station 14 and the exposure device 15.
  • pattern exposure is performed on the resist on the wafer W with EUV light having a wavelength of 13.5 nm.
  • the exposure apparatus 15 has a predetermined degree of decompression, for example, 10 ⁇ by a decompression device not shown. The pressure is reduced to 4 Pa to 10 ⁇ 7 Pa.
  • a control unit 300 is provided as shown in FIG.
  • the control unit 300 controls the operation of drive systems such as the above-described various processing apparatuses and wafer transfer mechanisms based on the processing recipe. Further, the control unit 300 performs control so as to correct the setting values of various processing apparatuses based on the measurement result such as the line width of the pattern measured by the wafer inspection apparatus 71.
  • the control unit 300 is configured by a computer including, for example, a CPU and a memory, and can implement a coating process in the coating and developing processing system 1 by executing a program stored in the memory, for example.
  • Various programs for realizing the coating process in the coating and developing system 1 are, for example, a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), and a memory card. Or the like installed in the control unit 300 from the storage medium H is used.
  • the control unit correction of set values of various processing devices by the control unit will be described.
  • the exposure amount (product of the irradiation time and the irradiation output) for the resist film R is small or is performed after the exposure. It is considered that the accumulated heating amount (product of heating temperature and heating time) in the heat treatment (post exposure bake) in the heat treatment apparatus 40 is insufficient.
  • the line width of the pattern is thinner than the allowable value, it is considered that the exposure amount is large or the integrated heating amount in the post-exposure baking is excessive.
  • the exposure unit 15 or light is controlled by the control unit 300 based on the inspection result of the wafer inspection apparatus 71.
  • At least one of the correction value of the exposure amount to the resist film R in the irradiation apparatus 102 and the correction value of the heating temperature or the heating time in the post-exposure baking in the heat treatment apparatus 40 is calculated.
  • the calculated correction value is fed back to the device related to the correction value. In adjusting the line width of the pattern, only either the integrated heating amount or the exposure amount may be corrected, or both the integrated heating amount and the exposure amount may be corrected.
  • the heating temperature In adjusting the integrated heating amount, it is preferable to adjust the heating temperature from the viewpoint of suppressing a decrease in throughput.
  • EUV light has low energy, and it is difficult to increase the exposure amount by increasing the exposure output by the exposure device 15, so in order to increase the exposure amount by the exposure device 15 inevitably. In particular, it is necessary to take a long exposure time, leading to a decrease in throughput. Therefore, when the line width of the pattern is adjusted by correcting the exposure amount, it is more preferable to feed back to the light irradiation device 102 that allows easy adjustment of the exposure output instead of the exposure device 15.
  • the sidewall angle is an angle ⁇ formed between the wafer W and the side wall of the pattern P as shown in FIG. 6, for example, and is normally set to 90 degrees.
  • the line width of the pattern P is the width L of the upper surface of the pattern P as shown in FIG.
  • the focus is adjusted only by adjusting the focal length of exposure by the exposure device 15, unlike the case of adjusting the line width of the pattern P. Adjustment is possible. Therefore, when the side wall angle is equal to or larger than a predetermined allowable value as a result of the inspection by the wafer inspection apparatus 71, the control unit 300 sets the focal length correction value based on the inspection result of the wafer inspection apparatus 71. It is calculated and fed back to the exposure apparatus 15.
  • the coating and developing treatment system 1 according to the present embodiment includes the light irradiation device 102, the light irradiation device 102 may adjust the focus.
  • the light irradiation unit 105 of the light irradiation apparatus 102 is provided with a wavelength filter, a diffraction grating, a prism, or the like (not shown) to extract UV light of a desired wavelength, or a light irradiation apparatus using a spectroscopic element. Only the UV light having a desired wavelength may be extracted from the light 102, and the exposure wavelength at the time of post exposure may be adjusted. By adjusting the exposure wavelength at the time of post-exposure, the focus can also be adjusted by the light irradiation device 102 by utilizing the change in the arrival depth of the UV light with respect to the film thickness direction of the resist film. .
  • the correction value of the exposure wavelength is calculated by the control unit 300 based on the inspection result of the wafer inspection apparatus 71 and fed back to the light irradiation apparatus 102. Therefore, in the coating and developing treatment system 1 according to the present embodiment, the sidewall angle may be adjusted by adjusting the focus with the exposure device 15, and the film thickness direction of the resist film may be adjusted depending on the exposure wavelength at the time of post-exposure. On the other hand, both the line width and the sidewall angle may be adjusted by the light irradiation device 102 using the characteristic that the reach depth of the UV light changes.
  • a cassette C containing a plurality of wafers W is placed on a predetermined cassette placement plate 21 of the cassette station 10. Thereafter, the wafers W in the cassette C are sequentially taken out by the wafer transfer device 23 and transferred to the delivery block G3 of the processing station 11.
  • the wafer W is transferred to, for example, the wafer placement unit 73 by the wafer transfer mechanism 70.
  • the wafer W is transferred to the heat treatment apparatus 40 of the second block G2 by the wafer transfer mechanism 80, and the temperature is adjusted.
  • the wafer W is transferred by the wafer transfer mechanism 80 to, for example, the lower antireflection film forming apparatus 30 of the first block G1, and a lower antireflection film is formed on the wafer W.
  • the wafer W is transferred to the heat treatment apparatus 40 of the second block G2, and heat treatment is performed.
  • the wafer W is transferred to the adhesion device 41 of the second block G2 and subjected to a hydrophobic treatment. Thereafter, the wafer W is transferred to the resist coating device 31 by the wafer transfer mechanism 80, and a resist film is formed on the wafer W. In this case, the resist film formed on the wafer W is a so-called photosensitized resist for EUV exposure. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 and pre-baked.
  • the wafer W is transferred to the upper antireflection film forming apparatus 32, and an upper antireflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40, heated, and the temperature is adjusted. Thereafter, the wafer W is transferred to the peripheral exposure device 42 and subjected to peripheral exposure processing.
  • the wafer W is transferred to the delivery block G 4 and transferred to the load lock chamber 100 of the post exposure station 13 by the wafer transfer mechanism 90 of the interface station 12.
  • the wafer W is transferred to the load lock chamber 111 by the wafer transfer mechanism 101 and the wafer transfer mechanism 112 of the interface station 14, and then transferred to the exposure device 15.
  • the pattern is exposed to the wafer W by EUV exposure by the exposure stage 15a as described above.
  • the wafer W on which the pattern exposure has been completed is transferred to the load lock chamber 111, and after that, the pressure is reduced to the same level as the interface station 14 and the post exposure station 13, and then transferred to the transfer device 110 by the wafer transfer mechanism 112.
  • the wafer is transported to the wafer placement unit 103 by the wafer transfer mechanism 101.
  • the control unit 300 keeps the wafer W in the wafer placement unit 103 so that the time from the end of exposure in the exposure apparatus 15 to the start of post-exposure bake processing in the heat treatment apparatus 40 is constant. Is adjusted by controlling the operation of the wafer transfer mechanism 101.
  • the acid concentration generated in the resist film R by UV light irradiation be constant for each wafer W.
  • the time from the end of post-exposure with UV light to the disclosure of post-exposure bake should be made constant. ing. Therefore, in the coating and developing treatment system 1 as well, it is desirable to make the time from the end of post-exposure to the start of post-exposure baking, that is, the conveyance to the heat treatment apparatus 40 constant.
  • the time L1 from post-exposure to post-exposure baking is disclosed while continuously performing pattern exposure in the exposure device 15.
  • the wafer transfer mechanism 101 it is conceivable to control the operation of the wafer transfer mechanism 101 so that the wafer mounting unit 103 temporarily waits for the wafer W only for the time indicated by “B” in FIG.
  • the time B for allowing the wafer placement unit 103 to wait is adjusted before starting the post-exposure. To do.
  • time L1 from post-exposure to post-exposure bake disclosure can be made constant.
  • the time L2 from pattern exposure by EUV light to post-exposure in the exposure apparatus 15 it is preferable to make the time L2 from pattern exposure by EUV light to post-exposure in the exposure apparatus 15 constant, but only the time L1. Is controlled to be constant, the time B2 that the wafer mounting unit 103 waits varies depending on the transfer state of the wafer W in the coating and developing treatment system 1 and the like, and therefore the time L2 may not be constant. In such a case, for example, as shown in FIG. 8, at the time of the first “wafer 1” in the same lot, the wafer mounting unit 103 is made to wait in advance for a predetermined time B1, and the subsequent wafers after “wafer 2”.
  • the wafer placement unit 103 may be kept on standby for a time B1. In this way, the time L1 and the time L2 can be made constant for all the wafers W, and variations in the acid concentration generated in the resist film R can be further suppressed.
  • the wafer W that has been subjected to pattern exposure by EUV light is subjected to batch exposure using UV light having a predetermined wavelength.
  • a final resist pattern before the development processing is formed on the wafer W.
  • the wafer W is transferred to the heat treatment apparatus 40 by the wafer transfer mechanism 80 and subjected to post-exposure baking. Thereafter, the wafer W is transferred to, for example, the development processing device 33 and developed. After completion of the development process, the wafer W is transferred to the heat treatment apparatus 40 and subjected to a post-bake process.
  • the wafer W is transferred to the wafer placement units 73 and 74.
  • the wafer W is transferred to the wafer inspection devices 71 and 72 by the wafer transfer mechanism 70.
  • the wafer inspection apparatus 71 for example, the line width of the final pattern is measured, and the measurement result is output to the control unit 300.
  • the overlay error is measured for the wafer W transferred to the wafer inspection apparatus 72, and the measurement result is output to the control unit 300.
  • the correction value is fed back to the exposure apparatus 15, the light irradiation apparatus 102, and the heat treatment apparatus 40 as necessary. As a result, for example, for other wafers in the same lot, processing is performed with the set value to which the correction value is fed back, and pattern formation with higher accuracy is performed.
  • the wafer W that has been exposed to the fine pattern by the EUV light is then subjected to the batch exposure by the UV light by the light irradiation device 102 of the post-exposure station 13.
  • the pattern exposure process is so-called photosensitized, and a resist pattern before the development process with high resolution and improved contrast is formed on the wafer W. Therefore, it is possible to assist the exposure with the EUV light in the exposure apparatus 15, and it is possible to reduce the EUV exposure time and exposure energy by the exposure processing unit of the exposure apparatus 15. Efficient operation is possible. As a result, even in a photolithography process using EUV, it is possible to form a fine pattern on a substrate while suppressing a decrease in throughput.
  • a fine pattern P can be formed with higher accuracy.
  • the wafer W is temporarily accommodated in the wafer mounting unit 103 for the time L1 from post-exposure to post-exposure bake disclosure and the time L2 from pattern exposure to EUV light to post-exposure. Since the time is constant by adjusting the time for the pattern P, the variation in the line width of the pattern P can be further reduced.
  • the light irradiation apparatus 102 performs post-exposure collectively on the entire surface of the wafer W.
  • post-exposure is not necessarily performed collectively, and instead of the light source 106, for example.
  • the light irradiation unit 121 may be configured.
  • a moving mechanism 122 that moves the light irradiation unit 121 relative to the wafer W in a direction orthogonal to the length direction of the light irradiation unit 121 is provided.
  • inspection is performed over the entire surface of the wafer W, but when it is desired to adjust the line width only for a predetermined region, By configuring the light irradiation unit 121 to increase or decrease the exposure output for each light source 120, the exposure amount can be further adjusted only for a predetermined region.
  • the moving mechanism 122 that moves the light irradiation unit 121 relative to the wafer W is illustrated. However, for example, the light irradiation unit 121 is fixed and the movement mechanism 122 is mounted on the mounting table 104, for example. The wafer W may be moved relative to the light irradiation unit 121.
  • the exposure of each shot by the exposure device 15 in the control unit 300 Order information may be received, and post-exposure of each shot may be performed by the light irradiation device 102 in the same order as the exposure device 15 based on the information.
  • the time L2 from the pattern exposure in the exposure apparatus 15 to the post exposure in the light irradiation apparatus 102 can be strictly managed in units of shots, so that a pattern with higher accuracy can be formed on the wafer W.
  • the line width and sidewall angle of the pattern can be adjusted for each shot, and the adjustment within each shot can be performed with higher accuracy.
  • a moving mechanism (not shown) that relatively moves the mounting table 104 and the light irradiation unit 105 in, for example, the XY direction may be provided in at least one of the mounting table 104 and the light irradiation unit 105.
  • the post exposure station 13 is configured as a section adjacent to the interface station 14, but the post exposure station 13 is of course integrated with the interface station 14 to form one post exposure. You may comprise as a station or an interface station.
  • the line width of the pattern measured by the wafer inspection apparatus 71 is measured, and the measurement result is fed back to the light irradiation apparatus 102 and the heat treatment apparatus 40 via the control unit 300. Therefore, the measurement result Based on the above, it is possible to control the light intensity, the heating temperature, and the like of the light irradiation device 102. In this way, by controlling the UV exposure after the pattern exposure by EUV and the heat treatment temperature, the line width of the pattern P can be controlled more effectively than in the case of controlling the exposure amount by the EUV light. Is possible. That is, even if the exposure amount, time, etc.
  • the effect of the exposure device 15 are adjusted, the effect is very small, but the effect is remarkable when the UV light of the light irradiation device 102 and the heating temperature of the heat treatment device 40 are controlled.
  • the line width of the pattern P can be adjusted more effectively and efficiently.
  • the interface station 12 performs post exposure on the wafer after pattern exposure using UV light, the interface station 14 in the same atmosphere as the post exposure station 13, and the wafer W.
  • the exposure apparatus 15 that performs pattern exposure with EUV light is arranged in series in a straight line, but may be arranged as shown in FIG.
  • the exposure apparatus 15 and the post-exposure station 13 are connected in parallel to the interface station 12 adjacent to the treatment station.
  • the interface station 12 is provided with a wafer transfer device 162 that can move on the transfer path 161 extended in the X direction, like the wafer transfer device 23 of the cassette station 10.
  • the wafer transfer device 162 is configured to be accessible to a delivery block G4, a load lock chamber 111 of the exposure device 15, and a delivery device 163 having a mounting table installed in the post exposure station 13.
  • the exposure apparatus 15 having light sources having different wavelengths and the post exposure station 13 containing the light irradiation apparatus 102 are arranged in parallel with respect to one interface station 12. Therefore, one interface station 12 and one wafer transfer device 162 can quickly perform pattern exposure using EUV light and post-exposure processing using UV light, which is extremely efficient.
  • the exposure apparatus 15 performs pattern exposure with EUV light
  • the light used for pattern exposure is not limited to EUV light
  • pattern exposure is performed by ArF exposure or KrF exposure.
  • the present invention can also be applied to the case of performing pattern exposure using i-line or g-line, or using electron beam drawing exposure.
  • the imaging target is the front side of the substrate, but the present invention can also be applied to imaging the back side of the substrate.
  • the above-described embodiment is an example in a semiconductor wafer coating and developing system, but the present invention is applicable to other substrates such as FPDs (flat panel displays) other than semiconductor wafers and mask reticles for photomasks. Applicable even for coating and developing systems
  • the present invention is useful when constructing a substrate processing system for performing EUV exposure processing.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un système de traitement de substrat comprenant : un poste de traitement qui est doté d'une pluralité d'appareils de traitement ; d'un poste d'interface qui transfère les substrats entre le système de traitement de substrat et l'appareil d'exposition, qui est à l'extérieur du système, et qui réalise une exposition de motif ; d'un appareil de rayonnement de lumière qui réalise une post-exposition en utilisant de la lumière UV par rapport à des films de réserve sur le substrat ayant été soumis à l'exposition de motif ; d'un appareil d'inspection qui inspecte les substrats ayant été soumis à la post-exposition puis au développement ; et d'une unité de commande. L'unité de commande est conçue pour corriger, sur la base de résultats d'inspection de substrat, une température de chauffage d'un traitement de chauffage des substrats dans le poste de traitement et/ou une quantité de focalisation ou une quantité d'exposition dans l'appareil d'exposition et/ou une quantité d'exposition dans l'appareil de rayonnement de lumière et/ou une longueur d'onde de la lumière UV à utiliser dans l'appareil de rayonnement de lumière.
PCT/JP2015/050648 2014-01-31 2015-01-13 Système de traitement de substrat, procédé de traitement de substrat, et support de stockage informatique Ceased WO2015115166A1 (fr)

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JP2014-016725 2014-01-31

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JP2016086042A (ja) * 2014-10-23 2016-05-19 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
CN109991815B (zh) * 2017-12-29 2020-10-16 上海微电子装备（集团）股份有限公司 一种泛曝补偿板、泛曝装置以及光刻装置
JP7181068B2 (ja) * 2018-11-30 2022-11-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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JP2002198289A (ja) * 2000-12-26 2002-07-12 Hitachi Ltd 半導体集積回路装置の製造方法
JP2006186302A (ja) * 2004-11-26 2006-07-13 Sanee Giken Kk 走査型露光用光源ユニット
JP2010157671A (ja) * 2009-01-05 2010-07-15 Nikon Corp 基板処理装置、現像装置、並びに露光方法及び装置
JP2013197337A (ja) * 2012-03-21 2013-09-30 Toshiba Corp 露光方法、及び露光システム

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JP4001469B2 (ja) * 2001-06-19 2007-10-31 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP3842221B2 (ja) * 2003-01-08 2006-11-08 東京エレクトロン株式会社 塗布装置

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JP2002198289A (ja) * 2000-12-26 2002-07-12 Hitachi Ltd 半導体集積回路装置の製造方法
JP2006186302A (ja) * 2004-11-26 2006-07-13 Sanee Giken Kk 走査型露光用光源ユニット
JP2010157671A (ja) * 2009-01-05 2010-07-15 Nikon Corp 基板処理装置、現像装置、並びに露光方法及び装置
JP2013197337A (ja) * 2012-03-21 2013-09-30 Toshiba Corp 露光方法、及び露光システム

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