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WO2015189023A1 - Système capteur de champ magnétique, son procédé de fabrication et son procédé de fonctionnement - Google Patents

Système capteur de champ magnétique, son procédé de fabrication et son procédé de fonctionnement Download PDF

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Publication number
WO2015189023A1
WO2015189023A1 PCT/EP2015/061530 EP2015061530W WO2015189023A1 WO 2015189023 A1 WO2015189023 A1 WO 2015189023A1 EP 2015061530 W EP2015061530 W EP 2015061530W WO 2015189023 A1 WO2015189023 A1 WO 2015189023A1
Authority
WO
WIPO (PCT)
Prior art keywords
hall sensor
magnetic field
region
sensor
field sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2015/061530
Other languages
German (de)
English (en)
Inventor
Christian Patak
Achim BREITLING
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of WO2015189023A1 publication Critical patent/WO2015189023A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/0206—Three-component magnetometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G01R33/072—Constructional adaptation of the sensor to specific applications

Definitions

  • Magnetic field sensor arrangement corresponding manufacturing method
  • the present invention relates to a magnetic field sensor arrangement, a corresponding production method and an operating method.
  • PRIOR ART DE 10 2008 042 800 A1 discloses a device for measuring the direction and / or strength of a magnetic field.
  • the device is arranged on a substrate.
  • a Hall sensor is arranged, which is provided to detect a magnetic field component in the z-direction, which acts substantially perpendicular to the surface of the substrate.
  • two fluxgate sensors are provided to detect a magnetic field component in the X-Y plane of the
  • the Hall sensor is provided in this device on or in a silicon substrate, whereas the two fluxgate sensors are manufactured separately by micromechanical components and subsequently fixed on the surface of the silicon substrate.
  • DE 10 2012 209 232 A1 describes a magnetic field sensor having a first magnetic sensor core for measuring a magnetic field in a first measuring direction and a second magnetic sensor core for measuring a magnetic field in a second measuring direction, wherein the first and second magnetic sensor cores have a common magnetic anisotropy.
  • the sensor cores are components of flip-core fluxgate sensors, which are suitable for detecting magnetic fields in the wafer plane.
  • No. 6,536,123 B1 describes a magnetic field sensor with two fluxgate sensors and a Hall sensor, wherein a hybrid IC is used to evaluate the sensor signals. It is well known that Hall-effect sensors can be fabricated on a substrate with Ill-V semiconductor materials.
  • US Pat. No. 6,803,638 discloses an InSb Hall sensor which is deposited on a GaAs substrate by molecular beam epitaxy.
  • the present invention provides a magnetic field sensor arrangement according to claim 1, a corresponding manufacturing method according to claim 1 1 and an operating method according to claim 13. Preferred developments are the subject of the respective subclaims. Advantages of the invention
  • the idea underlying the present invention is to provide at least one Hall sensor region formed of an III-V semiconductor material above an ASIC substrate.
  • the magnetic field sensor arrangement according to the invention according to claim 1 and the corresponding manufacturing method according to claim 1 1 allow a direct
  • the Hall sensor region formed from the III-V semiconductor material in particular an InSb (indium antimonide) semiconductor region over an ASIC wafer substrate.
  • Ill-V semiconductor material can be directly on a
  • Integrating evaluation wafer of the magnetic field sensor arrangement This allows a smaller size, lower costs, lower power consumption and a higher data rate.
  • the Hall sensor region according to the present invention provides a substantially improved performance. Due to the possible integration of further sensor areas, such as magnetic core areas and magnetic coil devices for fluxgate sensor devices, a compact multidimensional, in particular three-dimensional, magnetic field sensor arrangement with a small housing size can be created.
  • the Hall sensor region is formed from InSb. This material can be particularly controlled by applying sputtering.
  • the Hall sensor region has a layer sequence with material layers of different crystal grain size. This promotes adhesion and cohesion of the Hall sensor area on the substrate.
  • first layers with a first crystal grain size alternating first layers with a first crystal grain size and second layers with a second
  • Crystal grain size is formed, wherein the second crystal grain size is substantially smaller than the first crystal grain size. This leads to an advantageous toothing of the layers
  • Fluxgate sensor device comprising a magnetic core region formed from a ferromagnetic material and a magnetic coil device, embedded in the insulation layer arrangement applied to the front side, wherein the
  • Insulation layer arrangement guided second conductor path means is electrically connected to a fluxgate sensor evaluation circuit means formed in the ASIC substrate.
  • a combination sensor arrangement can be formed, for example an SD sensor.
  • the Hall sensor device and the Fluxgatesensor are identical to each other.
  • Insulating layer arrangement embedded. This enables good insulation and easy processability.
  • the Hall sensor region is arranged above or below adjacent to an end of the magnetic core region.
  • a dual function of the Hall sensor device can be realized, which allows a gain in space.
  • a magnetic field flux concentrator region formed from a ferromagnetic material is embedded in the insulation layer arrangement above or below the Hall sensor region. This increases the measurement performance.
  • the magnetic flux concentrator region is formed as a hollow cylinder whose cylinder axis is substantially perpendicular to the Hall sensor region. This allows a favorable field distribution.
  • the magnetic core region and / or the Flußkonzentrator Scheme of Ni / Fe / Al is formed.
  • This material can be controlled using thin-film technology.
  • FIG. 1 is a schematic plan view of a magnetic field sensor device according to a first embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view of the magnetic field sensor device according to the embodiment of the present invention taken along the line A-A 'in FIG. 1;
  • FIG. Fig. 3 is a schematic enlarged cross-sectional view of
  • FIG. 4 is a schematic plan view of a magnetic field sensor arrangement according to FIG.
  • Fig. 5a is a schematic enlarged cross-sectional view of a
  • Hall sensor area of a magnetic field sensor arrangement according to a third embodiment of the present invention.
  • Magnetic field sensor arrangement according to the third embodiment of the present invention.
  • FIG. 1 is a schematic plan view of a magnetic field sensor device according to a first embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view of the magnetic field sensor device according to the embodiment of the present invention taken along the line A-A 'in FIG. 1.
  • reference numeral AC denotes an ASIC substrate, in particular
  • Wafer substrate with a front VS and a back RS.
  • Hall sensor device H which has a Hall sensor region HS formed from a 111 V semiconductor material, here of InSb (indium antimonide), is in an applied on the front side VS insulation layer arrangement with a plurality of insulating layers I0, 11, 12, 13, for example of oxide embedded.
  • InSb indium antimonide
  • conductor track layers are deposited and patterned within the insulation layer arrangement 10, 11, 12, 13 and corresponding vias are formed for the plated-through holes.
  • the conductor track device L2 is shown only schematically in FIGS. 1 and 2 for reasons of clarity and in fact has a plurality of conductor tracks which are required for the functions of the Hall sensor device H.
  • two fluxgate sensor devices F1, F2 are embedded in the insulation layer arrangement 10, 11, 12, 13 applied to the front side VS.
  • a first fluxgate sensor device F1 which has a first magnetic core region FC1 and a first magnetic coil device SE1.
  • the magnet coil devices SE1, SE2 usually have an excitation coil and a pick-up coil.
  • Magnet coil devices SE1, SE2 via a through the insulating layers I0, 11 of the insulating layer arrangement I0, 11, 12, 13 guided second conductor track device L1 electrically connected to a Fluxgatesensor- evaluation circuit 100 formed in the ASIC substrate AC.
  • the conductor track devices L1, L2 are made of aluminum, for example.
  • the magnetic field sensor arrangement shown in FIGS. 1 and 2 is thus a
  • Hall sensor device H measures the magnetic field component in the z-direction.
  • the ASIC substrate AC forms the basis.
  • On the ASIC substrate AC is a first
  • Insulation layer applied I0 which, for example, of silicon oxide or
  • the ferromagnetic material of the magnetic core regions FC1, FC2 is applied to the first insulating layer 10 by thin-film technology and patterned, for example Ni / Fe / Al
  • a second insulating layer 11 is applied, in which the structured magnetic core areas FC1, FC2 are embedded.
  • the III-V semiconductor material for the Hall sensor region HS is formed by a sputtering method multilayer applied and structured. This Hall sensor area HS is then embedded in a third insulation layer 12 and finally a fourth insulation layer 13 is deposited, which insulates the structure towards the top. Not shown and described are the known process steps of
  • Fig. 3 shows a schematic enlarged cross-sectional view of
  • Hall sensor portion of the magnetic field sensor device according to the first embodiment of the present invention.
  • the Hall sensor area HS is formed by a layer sequence S1, SS1, S2, SS2, S3, etc. with material layers
  • a typical range of variation for the sputtering temperature is 250 to 450 ° C.
  • first layers S1, S2, S3 having a first crystal grain size and second layers SS1, SS2 having a second crystal grain size are alternately formed on a start layer ST of InSb, the second crystal grain size being substantially smaller than the first crystal grain size.
  • Crystal grain sizes for the first and second layers are 5-50nm and 500-1000nm.
  • FIG. 4 shows a schematic plan view of a magnetic field sensor arrangement according to a second embodiment of the present invention.
  • the ASIC chip is designated by reference AC.
  • Embedded on its front VS is a single
  • Insulation layers 10, 11, 12, 13 are analogous to the first described above
  • Fluxgatesensoreinnchtung FO possible because you can use the Hall sensor device H 'for detecting a flux change after excitation of Fluxgatesensoreinnchtung FO.
  • the moment of the remagnetization of the magnetic core region FCO is detected on the basis of the change in the magnetic field in the z direction detected by the Hall sensor device H '.
  • This embodiment has the advantage that the component can be made smaller.
  • Fig. 5a shows a schematic enlarged cross-sectional view of a
  • a magnetic field flux concentrator region FLC formed of a ferromagnetic material is located above, possibly also below, adjacent to the Hall sensor region HS "in FIG Insulation layer arrangement 10, 11, 12, 13, 14, 15 embedded.
  • Flux concentrator area FLC is provided in the form of a hollow cylinder with a cavity HL, wherein the cylinder axis is substantially perpendicular to the Hall sensor area HS ".
  • the preparation of the Flußkonzentrator Systems FLC is preferably done by a thin-film deposition with the same material as that for the
  • Magnetic core regions SE1, SE2 of Fluxgatesensor occasionally for example Ni / Fe / Al (nickel / iron / aluminum).
  • Insulation layer 14 etched a hole and deposited over a Ni / Fe / Al layer and etched back. To isolate the structure upwards here serves a fifth insulating layer 15th
  • the Hall sensor areas are substantially parallel to the front side VS, they can by appropriate
  • Insulation layer stack are provided to be made sensitive to magnetic fields in the x, y plane.
  • the geometries of the embodiments presented above in particular the geometries of the Hall sensor regions, can be varied as required.
  • the present invention is not limited to the III-V semiconductor material InSb but is applicable to any III-V semiconductor materials which are Hall-sensitive.
  • the magnetic coil devices SE1, SE2 each comprise a first and a second coil device, which serve for excitation or for pick-up.
  • a second coil device which serve for excitation or for pick-up.
  • egg first coil which serves both for excitation and for pick-up to provide.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)

Abstract

L'invention concerne un système capteur de champ magnétique, son procédé de fabrication et son procédé de fonctionnement. Ce système capteur de champ magnétique comporte un substrat ASIC (AC; AC) présentant une face avant (VS) et une face arrière (RS) ainsi qu'un dispositif capteur à effet Hall (H; Η'; H") qui comporte une zone (HS; HS'; HS") constituée d'un matériau semi-conducteur lll-V qui est incorporée dans un système de couches d'isolation (I0, I1, I2, I3; I0, I1, I2, I3, I4, I5) appliqué sur la face avant (VS). La zone (HS; HS'; HS") est électriquement reliée, par l'intermédiaire d'une piste conductrice (L2) traversant le système de couches d'isolation (I0, I1, I2, I3; I0, I1, I2, I3, I4, I5), à un circuit d'évaluation de capteur à effet Hall (101) formé dans le substrat ASIC (AC; AC').
PCT/EP2015/061530 2014-06-13 2015-05-26 Système capteur de champ magnétique, son procédé de fabrication et son procédé de fonctionnement Ceased WO2015189023A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014211311.3A DE102014211311A1 (de) 2014-06-13 2014-06-13 Magnetfeldsensoranordnung, entsprechendes Herstellungsverfahren und Betriebsverfahren
DE102014211311.3 2014-06-13

Publications (1)

Publication Number Publication Date
WO2015189023A1 true WO2015189023A1 (fr) 2015-12-17

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PCT/EP2015/061530 Ceased WO2015189023A1 (fr) 2014-06-13 2015-05-26 Système capteur de champ magnétique, son procédé de fabrication et son procédé de fonctionnement

Country Status (3)

Country Link
DE (1) DE102014211311A1 (fr)
TW (1) TW201602609A (fr)
WO (1) WO2015189023A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115523944A (zh) * 2021-06-25 2022-12-27 上海艾为电子技术股份有限公司 一种位置传感系统及其制备方法、测试方法
EP4394418A1 (fr) * 2022-12-31 2024-07-03 Melexis Technologies SA Dispositif semi-conducteur à composant magnétique doux intégré et son procédé de production

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6868963B2 (ja) * 2016-03-15 2021-05-12 エイブリック株式会社 磁気センサおよびその製造方法
DE102017004349A1 (de) 2017-05-08 2018-11-08 Tdk-Micronas Gmbh Magnetfeldkompensationseinrichtung
TWI768489B (zh) * 2018-11-01 2022-06-21 新加坡商格羅方德半導體私人有限公司 霍爾感測器之結構及形成其結構之方法
US11245067B2 (en) 2019-11-01 2022-02-08 Globalfoundries Singapore Pte. Ltd. Hall sensors with a three-dimensional structure

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5494711A (en) * 1993-01-12 1996-02-27 Murata Manufacturing Co., Ltd. Method of preparing InSb thin film
JP2001308407A (ja) * 2000-04-24 2001-11-02 Victor Co Of Japan Ltd ＩｎＳｂ薄膜基板
JP2002299599A (ja) * 2001-04-02 2002-10-11 Asahi Kasei Corp 集積化磁気センサ及びその製造方法
US6536123B2 (en) 2000-10-16 2003-03-25 Sensation, Inc. Three-axis magnetic sensor, an omnidirectional magnetic sensor and an azimuth measuring method using the same
US6803638B2 (en) 2001-07-26 2004-10-12 Asahi Kasei Electronics Co., Ltd. Semiconductor hall sensor
EP1598876A1 (fr) * 2003-02-26 2005-11-23 Asahi Kasei Electronics Co., Ltd. Detecteur a semi-conducteur et son procede de production
DE102008042800A1 (de) 2008-10-13 2010-04-15 Robert Bosch Gmbh Vorrichtung zur Messung von Richtung und/oder Stärke eines Magnetfeldes
EP2194391A1 (fr) * 2008-12-03 2010-06-09 STMicroelectronics Srl Capteur magnétique a large gamme et procède de fabrication
EP2333573A1 (fr) * 2009-11-30 2011-06-15 STMicroelectronics Srl Capteur magnétique intégré pour mesurer des champs magnétiques horizontaux et procédure de fabrication dudit capteur
EP2527857A2 (fr) * 2011-05-26 2012-11-28 Honeywell International Inc. Capteurs magnétiques à trois axes
DE102012209232A1 (de) 2012-05-31 2013-12-05 Robert Bosch Gmbh Magnetfeldsensor

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5494711A (en) * 1993-01-12 1996-02-27 Murata Manufacturing Co., Ltd. Method of preparing InSb thin film
JP2001308407A (ja) * 2000-04-24 2001-11-02 Victor Co Of Japan Ltd ＩｎＳｂ薄膜基板
US6536123B2 (en) 2000-10-16 2003-03-25 Sensation, Inc. Three-axis magnetic sensor, an omnidirectional magnetic sensor and an azimuth measuring method using the same
JP2002299599A (ja) * 2001-04-02 2002-10-11 Asahi Kasei Corp 集積化磁気センサ及びその製造方法
US6803638B2 (en) 2001-07-26 2004-10-12 Asahi Kasei Electronics Co., Ltd. Semiconductor hall sensor
EP1598876A1 (fr) * 2003-02-26 2005-11-23 Asahi Kasei Electronics Co., Ltd. Detecteur a semi-conducteur et son procede de production
DE102008042800A1 (de) 2008-10-13 2010-04-15 Robert Bosch Gmbh Vorrichtung zur Messung von Richtung und/oder Stärke eines Magnetfeldes
EP2194391A1 (fr) * 2008-12-03 2010-06-09 STMicroelectronics Srl Capteur magnétique a large gamme et procède de fabrication
EP2333573A1 (fr) * 2009-11-30 2011-06-15 STMicroelectronics Srl Capteur magnétique intégré pour mesurer des champs magnétiques horizontaux et procédure de fabrication dudit capteur
EP2527857A2 (fr) * 2011-05-26 2012-11-28 Honeywell International Inc. Capteurs magnétiques à trois axes
DE102012209232A1 (de) 2012-05-31 2013-12-05 Robert Bosch Gmbh Magnetfeldsensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115523944A (zh) * 2021-06-25 2022-12-27 上海艾为电子技术股份有限公司 一种位置传感系统及其制备方法、测试方法
EP4394418A1 (fr) * 2022-12-31 2024-07-03 Melexis Technologies SA Dispositif semi-conducteur à composant magnétique doux intégré et son procédé de production
WO2024141406A1 (fr) * 2022-12-31 2024-07-04 Melexis Technologies Sa Dispositif à semi-conducteur avec composant magnétique doux intégré et son procédé de production

Also Published As

Publication number Publication date
DE102014211311A1 (de) 2015-12-17
TW201602609A (zh) 2016-01-16

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