[go: up one dir, main page]

WO2015172450A1 - 一种像素单元及其制作方法、显示装置 - Google Patents

一种像素单元及其制作方法、显示装置 Download PDF

Info

Publication number
WO2015172450A1
WO2015172450A1 PCT/CN2014/084511 CN2014084511W WO2015172450A1 WO 2015172450 A1 WO2015172450 A1 WO 2015172450A1 CN 2014084511 W CN2014084511 W CN 2014084511W WO 2015172450 A1 WO2015172450 A1 WO 2015172450A1
Authority
WO
WIPO (PCT)
Prior art keywords
pixel
layer
pixel defining
light emitting
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2014/084511
Other languages
English (en)
French (fr)
Inventor
石磊
皇甫鲁江
许晓伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US14/648,125 priority Critical patent/US9799709B2/en
Publication of WO2015172450A1 publication Critical patent/WO2015172450A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a pixel unit, a method for fabricating the same, and a display device. Background technique
  • the basic structure of an Organic Light-Emitting Diode (OLED) device consists of a thin, transparent, semiconducting indium tin oxide ( ⁇ ) connected to the positive electrode of the power, plus another metal cathode.
  • ⁇ indium tin oxide
  • the entire structural layer includes: a hole transport layer (HTL), an illuminating layer (EL), and an electron transport layer (ETL).
  • HTL hole transport layer
  • EL illuminating layer
  • ETL electron transport layer
  • the external quantum efficiency of 0LED depends on its internal quantum efficiency and light extraction efficiency. At present, there are two main reasons for limiting the light-emitting efficiency of 0LED devices:
  • the total reflection of light at the electrode-air interface and the glass-air interface limits the light extraction, which is mainly due to the large difference in refractive index between different dielectric materials.
  • Light can be emitted out within a certain angle, so the light that is not in the range of angles can not escape to the outside of the device to form the outgoing light, and finally is gradually absorbed by the material inside the device;
  • the light reflected by the interface forms a waveguide mode in the dielectric material, which is absorbed by the material after being conducted.
  • Fig. 1 is a schematic cross-sectional view showing a prior art OLED unit.
  • the OLED unit includes: an anode layer 1, a pixel defining layer 2, an organic light emitting layer 3, and a cathode layer 4 .
  • the anode layer 1 includes a plurality of pixel anodes distributed in an array; the pixel defining layer 2 covers the anode layer 1 and exposes a light emitting region on each of the pixel anodes, wherein the organic light emitting layer 3 is located The light emitting region is located on the organic light emitting layer 3. From the structure formed, the organic light-emitting layer 3 in each of the light-emitting regions is completely filled by the pixel defining layer 2.
  • the area of the pixel anode is The area of the light-emitting area is similar, so that the light L emitted from the side of the organic light-emitting layer 3 has a longer optical path in the pixel defining layer 2, and a part of the light passes through the pixel defining layer 2 and is directly incident on the bottom layer.
  • the glass substrate is absorbed later and cannot be emitted from the display. Summary of the invention
  • the present invention solves the problem of low light extraction efficiency of the OLED backplane, and proposes a pixel unit, a manufacturing method thereof, and a display device for improving light extraction efficiency.
  • a pixel unit including: an anode layer, a pixel defining layer, an organic light emitting layer and a cathode layer; wherein the anode layer includes a plurality of pixel anodes distributed in an array, the pixel defining layer Located above the anode layer, and including a plurality of pixel defining units having a certain interval; the pixel defining unit is in one-to-one correspondence with the pixel anode, and each pixel defining unit is defined on the corresponding pixel anode a light emitting region, the organic light emitting layer is located in the light emitting region, and the cathode layer is located on the organic light emitting layer.
  • the spacing between adjacent pixel defining units is greater than the spacing between adjacent ones of the pixel anodes.
  • the height of the pixel defining unit is higher than the sum of the thicknesses of the organic light emitting layer and the cathode layer.
  • the pixel defining unit has a thickness ranging from 3 to 5 m and a height between 1.3 and 2.0 ⁇ m.
  • the spacing between adjacent anodes of the pixels is between 0.5 and 1.5 ⁇ m.
  • the convex surface of the pixel defining unit is a surface having a certain curvature.
  • a cathode layer is formed on the organic light-emitting layer.
  • the method further includes: thinning the thickness of the plurality of pixel definition units such that an interval between adjacent ones of the pixel definition units is greater than an interval between adjacent ones of the pixel anodes.
  • the method further includes: thinning the plurality of pixel definition units sideways such that the convex surface thereof has a certain degree of curvature.
  • the present invention also discloses a display device comprising the pixel unit as described above.
  • the present invention sets the pixel defining layer into a plurality of pixel defining units which are independent of each other and have a certain interval. Compared with the prior art, the thickness of the pixel defining layer around the organic light emitting layer is reduced, so that the light emitted from the organic light emitting layer is in the pixel.
  • the optical path in the definition layer is shortened; the invention also increases the area of the pixel anode by reducing the spacing between the anodes of the respective pixels, and the light emitted from the organic light-emitting layer passes through the pixel defining layer due to the thinning of the pixel defining layer thickness After refraction, the probability of being reflected by the pixel anode increases, and the probability of being absorbed by the substrate is reduced, so that the light extraction efficiency is greatly increased.
  • the present invention also provides that the convex surface of the pixel defining unit is disposed as a surface having a certain curvature, so that the total light is not easily generated when the light is emitted from the surface of the pixel defining unit having the curvature, thereby reducing the loss of the emitted light and improving.
  • the light extraction efficiency DRAWINGS
  • FIG. 1 is a schematic structural view of an OLED unit in the prior art
  • FIG. 2 is a schematic cross-sectional view of a pixel unit according to an embodiment of the present invention
  • FIG. 3 (a) ⁇ (b) are optical path diagrams when the light emitted from the side of the organic light-emitting layer passes through the pixel defining unit in the present invention
  • FIGS. 5(a) to (d) are flowcharts showing a process for preparing a pixel unit according to an embodiment of the present invention.
  • the present invention is directed to the pixel definition layer structure in the prior art, which affects the extraction efficiency of the side light.
  • the light reflected by the anode is transmitted in the pixel defining layer for a longer optical path, the material is absorbed by more energy, and the light is defined from the pixel.
  • the problem that total reflection occurs when the layer structure is emitted, resulting in loss of emitted light provides a pixel unit, a manufacturing method thereof, and a display device, which can shorten the optical path of light in the pixel defining layer, reduce light absorption, and prevent total reflection. Improve the light extraction efficiency of OLED devices, thereby increasing the external quantum efficiency of OLED devices.
  • FIG. 2 is a schematic cross-sectional view showing a pixel unit according to an embodiment of the present invention.
  • the pixel unit includes an anode layer 101, a pixel defining layer 102, an organic light emitting layer 103 and a cathode layer 104; wherein the anode layer 101 includes a plurality of pixel anodes 1011 distributed in an array, the pixel definition
  • the layer 102 is located above the anode layer 101 and includes a plurality of surrounding surrounding pixel defining units 1021 having a certain interval; the pixel defining unit 1021 is corresponding to the pixel anode 1011; each pixel defining unit 1021 is corresponding
  • a light emitting region is defined on the pixel anode 1011, the organic light emitting layer 103 is located in the light emitting region, and the cathode layer 104 is located on the organic light emitting layer 103.
  • the plurality of pixel anodes 1011 are distributed on the substrate in an array, and each pixel anode 1011 has a certain interval therebetween.
  • the interval between the pixel anodes 1011 can be as small as possible within the manufacturing process allowable range, as long as the guarantee is ensured.
  • the anodes of the pixels are not electrically conductive. The purpose of this is to make the area of the pixel anode 1011 as large as possible, thereby increasing the area not covered by the pixel defining unit 1021, and the light emitted from the side of the organic light emitting layer 103 passes through the pixel defining unit. After refraction 1021, it can be reflected by the pixel anode 1011 as much as possible.
  • the spacing between the anodes of the pixels is between 0.5 and 1.5 ⁇ m.
  • the pixel defining unit 1021 corresponds to the plurality of pixel anodes 1011 and is located above the plurality of pixel anodes 1011.
  • the pixel defining unit 1021 is a surrounding structure, that is, its cross section is a ring structure, and has a certain wall thickness, wherein the intermediate region is empty, and is used to define a pixel above the pixel anode corresponding thereto.
  • the interval between the pixel defining units 1021 is preferably as large as possible.
  • an interval between two adjacent pixel defining units 1021 is greater than an interval between adjacent ones of the two pixel anodes 1011.
  • each pixel anode 1011 there is one pixel defining unit 1021 above each pixel anode 1011, and a certain spacing area A between two adjacent pixel defining units 1021 above the adjacent two pixel anodes 1011, so that organic light can be made.
  • the pixel defining layer material around the layer 103 is less, that is, the light emitted from the organic light-emitting layer 103 passes through the pixel defining unit 1021 with a shorter optical path, and the energy absorbed by the pixel defining layer material is relatively less.
  • the conventional pixel defining layer material is filled between two adjacent light emitting regions, so that the light emitted from the light emitting layer in the light emitting region has a longer optical path in the pixel defining layer, and the light is absorbed by the pixel defining layer material. .
  • the interval between two adjacent pixel anodes 1011 is as small as possible within the process allowable range, which can make the area of the pixel anode 1011 large; in addition, the area of the light-emitting area is not affected. In this case, it is ensured that the thickness of the pixel defining unit 1021 defining the light-emitting area is as thin as possible, so that the area of the pixel anode 1011 covered by the pixel is small. It can be seen from the structure that the interval between two adjacent pixel defining units 1021 is greater than the interval between their corresponding two adjacent pixel anodes 1011, such that the pixel anode 1011 is not the pixel. The area of the edge area covered by the definition unit 1021 becomes large.
  • the interval between the pixel defining units 1021 may be increased by selecting the shape of the pixel defining unit 1021, and/or thinning its thickness as much as possible.
  • the pixel defining unit 1021 may have a circular cross section, an elliptical ring shape, a rectangular ring shape, a positive ring shape, and the like, and the thickness thereof ranges from 3 to 5 m.
  • the organic light emitting layer 103 is located in a light emitting region defined by the pixel defining unit 1021 such that the pixel defining unit 1021 surrounds the organic light emitting layer 103.
  • the height of the pixel defining unit 1021 is greater than the height of the organic light emitting layer 103. Further, the height of the pixel defining unit 1021 is greater than the sum of the thicknesses of the organic light emitting layer 103 and the cathode layer 104. .
  • the height of the organic light-emitting layer 103 Between 0.2 and 0.3, and the height of the pixel defining unit 1021 is between 1.3 and 2.0 m, preferably 1 ⁇ 5 ⁇ ⁇ .
  • the plurality of pixel defining units 1021 are independent units, and each of the pixel defining units 1021 has a small thickness, and has a sufficiently large interval therebetween, and corresponding pixels thereof.
  • the interval between the anodes 1011 is again sufficiently small that the light emitted by the organic light-emitting layer 103 located in the middle of each of the pixel defining units 1021 passes through the pixel defining unit 1021 with a shorter optical path, and when it is from the pixel defining unit 1021 After the side surface is emitted and refracted, a large amount of light is irradiated onto the pixel anode 1011, and is reflected by the pixel anode and output. Therefore, this method can greatly increase the light extraction efficiency and reduce the light loss.
  • the convex surface of the pixel defining unit in the present invention may also be a surface having a certain curvature, i.e., as shown in Fig. 2, the convex surface thereof is arched.
  • the incident angle of the outgoing light can be reduced, the incident angle of the outgoing light whose original incident angle is larger than the critical angle is smaller than the critical angle. The angle, thereby reducing the total reflection of the outgoing light inside the transparent cover layer, reducing the light loss of the outgoing light, further improving the light extraction efficiency of the OLED device.
  • Fig. 3 is a view showing the optical path of the light-emitting layer on the side of the light-emitting layer passing through the pixel defining unit in the present invention.
  • a part of the light L emitted from the organic light-emitting layer 103 is refracted after being emitted into the air from the side surface of the pixel defining unit 1021, and most of the light of the refracted light is irradiated on the pixel anode 1011. Reflected, most of the reflected light can be directly emitted to the outside.
  • FIG. 3(a) a part of the light L emitted from the organic light-emitting layer 103 is refracted after being emitted into the air from the side surface of the pixel defining unit 1021, and most of the light of the refracted light is irradiated on the pixel anode 1011. Reflected, most of the reflected light can be directly emitted to the outside.
  • FIG. 3(a) a part of the light
  • a part of the light L' emitted from the organic light-emitting layer 103 is emitted from the convex surface of the pixel defining unit 1021, since the incident surface of the partial light L', that is, the convex surface has a certain
  • the curvature is such that the incident angle is smaller than that of the plane incident surface, so that the probability of total reflection of the partial light L' can be reduced.
  • the virtual box in Figure 3 (b) shows a comparison of the optical paths when the convex surface is flat and has a curved surface. It can be seen that in the case of a plane, the total reflected light is on a surface with a certain curvature. No total reflection occurs, and it can be directly emitted.
  • Embodiments of the present invention also provide a display device including the pixel unit as described above.
  • the structure of the pixel unit is the same as the above embodiment, and details are not described herein again.
  • display The structure of other parts can be referred to the prior art, and will not be described in detail herein.
  • the display device can be: a product or a component having any display function such as an electronic paper, a television, a display, a digital photo frame, a mobile phone, a tablet, or the like.
  • FIG. 4 is a schematic flow chart of a method for fabricating a pixel unit according to an embodiment of the invention.
  • 5(a) to 5(d) are flowcharts showing a manufacturing process of a pixel unit according to an embodiment of the present invention. As shown in FIG. 4, 5 ( a ) ⁇ 5 ( d ), the manufacturing method of the pixel unit includes:
  • Step 401 depositing a metal material on the substrate to form an anode layer 101, and performing photolithography and etching to form a pattern of an anode layer, the pattern of the anode layer comprising a plurality of pixel anodes 1011 distributed in an array, as shown in FIG. 5 a) as shown;
  • the metal material forming the anode layer may be an opaque and highly reflective metal material such as silver or aluminum, which may be deposited on the substrate by magnetron sputtering, thermal evaporation or other film forming methods.
  • the anode layer is formed of a metal material.
  • the area of the plurality of pixel anodes 1011 is made as large as possible, that is, the interval between them is as small as possible, as long as two adjacent ones are ensured. It is not necessary to conduct electricity between the pixel anodes 1011. This is because the larger the area of the pixel anode 1011, the smaller the possibility that the light emitted from the organic light-emitting layer is irradiated on the substrate, and the less light is absorbed by the substrate, which is advantageous for light emission.
  • the spacing between the anodes of the pixels may be between 0.5 and 1.5 ⁇ m.
  • Step 402 coating a surface of the anode layer with a pixel defining layer 102, and performing a photolithography process to form a plurality of pixel defining units 1021 having a certain interval, as shown in FIG. 5(b), wherein
  • the pixel defining unit 1021 is a surrounding surrounding structure having an opening portion, and each of the pixel defining units 1021 corresponds to one pixel anode 1011 such that each pixel defining unit 1021 defines a light emitting region on the corresponding pixel anode.
  • the light emitting region is located at the opening portion;
  • the pixel defining layer material is selected from the group consisting of high light transmittance insulating materials, specifically including transparent organic materials, such as polyimide series materials.
  • the thickness of the pixel definition unit is thinned as much as possible.
  • the pixel definition unit has a thickness ranging from 3 to 5 ⁇ m.
  • the thickness of the pixel defining unit can be as much as possible Thin, this can reduce the transmission path of the light emitted by the organic light-emitting layer in the pixel defining unit, and can also increase the area of the pixel anode for reflecting the light emitted by the organic light-emitting layer, thereby facilitating the light emission.
  • the shape of the pixel defining unit includes a circular ring shape, an elliptical ring shape, a rectangular ring shape, a square ring shape, and the like.
  • the pixel defining unit is thinned sideways such that its convex surface is formed as a surface having a certain curvature, the curvature of which is selected to minimize the total reflection of light on the convex surface.
  • Step 403 forming an organic light emitting layer 103 in a light emitting region defined by each of the pixel defining units 1021, as shown in FIG. 5(c);
  • the organic light emitting layer 103 may be formed by sequentially depositing a plurality of light emitting materials in a light emitting region defined by the pixel defining unit 1021 by using a mask, and the plurality of light emitting materials are formed into a hole injecting layer.
  • the material of the hole transport layer, the light emitting layer, the electron transport layer, and the electron injecting layer may be sequentially depositing a plurality of light emitting materials in a light emitting region defined by the pixel defining unit 1021 by using a mask, and the plurality of light emitting materials are formed into a hole injecting layer.
  • the material of the hole transport layer, the light emitting layer, the electron transport layer, and the electron injecting layer may be formed by sequentially depositing a plurality of light emitting materials in a light emitting region defined by the pixel defining unit 1021 by using a mask, and the plurality of light emitting materials are formed into a hole injecting layer.
  • the organic light emitting layer 103 is located at an opening portion of the pixel defining unit 1021, and has a height smaller than a height of the pixel defining unit 1021.
  • the height of the organic light-emitting layer 103 is between 0.2 and 0.3 ⁇ m, and the height of the pixel defining unit 1021 is between 1 ⁇ 3 and 2.0 ⁇ m, preferably 1. 5 ⁇ m.
  • Step 404 depositing a metal material on the organic light-emitting layer 103 to form a cathode layer 104, as shown in FIG. 5(d).
  • the metal material may be selected from one of silver, aluminum, and magnesium, and the cathode of the region outside the organic light-emitting layer is exposed and etched. The layer is removed, and finally only the cathode layer on the surface of the organic light-emitting layer remains.
  • the thickness of the cathode layer is preferably between 0.1 and 0.3, and the cathode layer is made of a transparent conductive material having a relatively high light transmittance.
  • the step 402 may specifically include the following steps:
  • Step 4021 coating a layer of pixel defining layer on the anode layer
  • Step 4022 coating a layer of photoresist on the pixel defining layer material;
  • Step 4023 exposing the photoresist by using a mask, and etching the pixel defining layer to form a plurality of pixel defining units having a certain interval, each pixel defining unit corresponding to one pixel anode.
  • the present invention sets the pixel defining layer into a plurality of pixel defining units which are independent of each other and spaced apart so that the optical path of the light in the pixel defining unit becomes shorter; the present invention also reduces the spacing between the anodes of the pixels and
  • the pixel around the luminescent layer defines the thickness of the cell to be thinned, so that the area of the pixel anode increases, the optical path of the light emitted by the organic luminescent layer is shortened in the pixel defining layer, and the probability of being reflected by the pixel anode is increased, and is absorbed by the substrate. The probability of reduction is reduced, so that the light extraction efficiency is greatly increased.
  • the present invention also provides that the convex surface of the pixel defining unit is set to a surface having a certain curvature, so that the total light is not easily generated when the light is emitted from the convex surface of the pixel defining unit, thereby reducing the loss of the emitted light and improving.
  • the light extraction efficiency is set to a surface having a certain curvature, so that the total light is not easily generated when the light is emitted from the convex surface of the pixel defining unit, thereby reducing the loss of the emitted light and improving.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种像素单元及其制作方法、显示装置。其中所述像素单元包括：阳极层（101）、像素定义层（102）、有机发光层（103）与阴极层（104）；其中，所述阳极层（101）包括阵列分布的多个像素阳极（1011），所述像素定义层（102）位于所述阳极层（101）之上，且包括多个具有一定间隔的像素定义单元（1021）；所述像素定义单元（1021）与所述像素阳极（1011）一一对应，且每个像素定义单元（1021）在对应的所述像素阳极（1011）上界定出一发光区域，所述有机发光层（103）位于所述发光区域中，所述阴极层（104）位于所述有机发光层（103）上。通过改进像素单元的结构，使得光取出效率大大增加。

Description

一种像素单元及其制作方法、 显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种像素单元及其制作方法、 显示装置。 背景技术
有机电致发光 ( Organic Light-Emitting Diode, 0LED )器件的基本 结构是由一薄而透明具半导体特性之铟锡氧化物 (ιτο)，与电力之正极 相连， 再加上另一个金属阴极， 包成如三明治的结构。整个结构层中 包括了： 空穴传输层 (HTL)、 发光层 (EL)与电子传输层 (ETL)。 当电力供 应至适当电压时， 正极空穴与阴极电荷就会在发光层中结合， 产生光 亮， 依其配方不同产生红、 绿和蓝 RGB三原色， 构成基本色彩。
一般来说， 0LED的外部量子效率取决于其内部量子效率 (internal quantum efficiency)以及光取出效率。 目前限制 0LED器件出光效率的 原因主要有以下两种：
第一、 光在电极 -空气界面、 玻璃-空气界面处发生的全反射会限 制光取出， 这主要是由于不同介质材料之间折射率差异较大产生的， 这一差异导致发光点源仅在一定角度内才可以把光线出射出去，所以 不在该角度范围内的光线无论经过多少次反射均无法逃逸到器件外 部形成出射光线， 最终在器件内部逐渐被材料吸收；
第二、经界面反射后的光线在介质材料内形成波导模式， 经传导 后被材料吸收。
图 1示出了现有技术中 0LED单元的横截面结构示意图。 如图 1 所示， 所述 0LED单元包括： 阳极层 1、 像素定义层 2、 有机发光层 3 和阴极层 4。 所述阳极层 1包括多个阵列分布的像素阳极； 所述像素 定义层 2覆盖在所述阳极层 1之上，并在每个像素阳极上露出发光区 域， 所述有机发光层 3位于所述发光区域内， 且所述阴极层位于所述 有机发光层 3上。 从形成的结构看， 每个发光区域内的有机发光层 3 之间完全被所述像素定义层 2所填充。此外， 所述像素阳极的面积与 所述发光区域的面积大小差不多，因此导致所述有机发光层 3从侧面 出射的光线 L在像素定义层 2中的光程较长，且有一部分光线经过像 素定义层 2之后直接入射至底层的玻璃基板后被吸收，而无法从显示 屏出射出去。 发明内容
本发明为解决 OLED背板的光取出效率低下的问题， 提出了一种 像素单元及其制作方法、 显示装置， 用以提高光取出效率。
根据本发明一方面， 其提供了一种像素单元， 包括： 阳极层、 像 素定义层、 有机发光层与阴极层； 其中， 所述阳极层包括阵列分布的 多个像素阳极， 所述像素定义层位于所述阳极层之上， 且包括多个具 有一定间隔的像素定义单元；所述像素定义单元与所述像素阳极一一 对应，且每个像素定义单元在对应的所述像素阳极上界定出一发光区 域， 所述有机发光层位于所述发光区域中， 所述阴极层位于所述有机 发光层上。
其中，相邻的所述像素定义单元之间的间隔大于其对应的相邻的 所述像素阳极之间的间隔。
其中，所述像素定义单元的高度高于所述有机发光层和阴极层厚 度之和。
其中， 所述像素定义单元的厚度范围介于 3~5 m之间， 高度介 于 1.3-2.0 μ m之间。
其中， 相邻的所述像素阳极之间的间隔介于 0.5-1.5 μ m之间。 其中， 所述像素定义单元的凸起表面为具有一定弧度的表面。 根据本发明另一方面， 其提供了一种像素单元的制备方法， 其包 括：
形成阳极层， 并对其进行刻蚀形成阵列分布的多个像素阳极； 在所述阳极层上形成像素定义层，并对其刻蚀形成多个具有一定 间隔的像素定义单元， 所述像素定义单元与所述像素阳极一一对应， 且使得每个像素定义单元在其对应的所述像素阳极上界定出一发光 区域； 在所述发光区域内形成有机发光层；
在有机发光层上形成阴极层。
所述方法还包括： 减薄所述多个像素定义单元的厚度， 使得相邻 的所述像素定义单元之间的间隔大于其对应的相邻的所述像素阳极 之间的间隔。
所述方法还包括： 侧面减薄所述多个像素定义单元， 使得其凸起 表面具有一定弧度。
本发明还公开了一种显示装置， 其包括如上所述的像素单元。 本发明通过将像素定义层设置成多个相互独立且具有一定间隔 的像素定义单元， 相较于现有技术， 有机发光层周围的像素定义层厚 度减薄， 使得有机发光层出射的光线在像素定义层中的光程变短； 本 发明还通过减小各像素阳极之间的间隔使得像素阳极的面积增大，同 时由于像素定义层厚度减薄，从有机发光层发出的光经过像素定义层 折射后， 被像素阳极反射的概率增大， 而被基板吸收的概率减小， 使 得出光效率大大增加。此外， 本发明还通过将像素定义单元的凸起表 面设置成具有一定弧度的表面，使得光线从所述具有弧度的像素定义 单元表面出射时不容易发生全反射， 减少了出射光线的损失， 提高了 光取出效率。 附图说明
图 1是现有技术中 OLED单元的结构示意图；
图 2是本发明实施例提供的一种像素单元的横截面结构示意图； 图 3 ( a ) ~ ( b ) 是本发明中有机发光层侧面出射光线经过像素 定义单元时的光路图；
图 4是本发明实施例提供的一种像素单元的制备方法流程图； 图 5 ( a ) ~ ( d ) 是本发明实施例提供的一种像素单元的制备工 艺流程图。 具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白， 以下结合具 体实施例， 并参照附图， 对本发明作进一步的详细说明。 本发明针对现有技术中像素定义层结构影响侧面光线的取出效 率， 经阳极反射后的光线在像素界定层内传输经过的光程较长， 被材 料吸收较多的能量， 以及光从像素界定层结构出射时发生全反射等， 导致出射光线的损失的问题， 提供了一种像素单元及其制作方法、显 示装置， 能够缩短光线在像素界定层中的光程， 减少光吸收， 防止全 反射， 提高 OLED器件的光取出效率， 进而提高 OLED器件的外部量 子效率。
图 2 示出了本发明实施例提供的一种像素单元的横截面结构示 意图。如图 2所示，所述像素单元包括阳极层 101、像素定义层 102、 有机发光层 103与阴极层 104; 其中， 所述阳极层 101包括阵列分布 的多个像素阳极 1011， 所述像素定义层 102位于阳极层 101之上， 且包括具有一定间隔的多个四周环绕型像素定义单元 1021; 所述像 素定义单元 1021与所述像素阳极 1011—一对应；每个像素定义单元 1021在对应的所述像素阳极 1011上界定出一发光区域， 所述有机发 光层 103位于所述发光区域中，所述阴极层 104位于所述有机发光层 103上。
所述多个像素阳极 1011以阵列形式分布在基板上， 且每个像素 阳极 1011之间具有一定间隔， 在制作工艺允许范围内， 所述像素阳 极 1011之间的间隔可以尽可能小， 只要保证所述像素阳极之间不导 电就行。 这样做的目的是为了使得所述像素阳极 1011的面积尽可能 大， 进而使得未被所述像素定义单元 1021所覆盖的面积增大， 从有 机发光层 103侧面出射的光经所述像素定义单元 1021折射后能够尽 可能多的被所述像素阳极 1011所反射。
可选地， 所述像素阳极之间的间隔介于 0.5-1.5 μ m之间。
所述像素定义单元 1021与所述多个像素阳极 1011—一对应，且 位于所述多个像素阳极 1011之上。所述像素定义单元 1021为四周环 绕型结构， 即其横截面为环状结构， 且具有一定的壁厚， 其中间区域 为空， 用于在其所对应的所述像素阳极之上界定出一发光区域， 有机 发光层设置在所述发光区域中。在保证有机发光层面积不受影响的情 况下， 所述像素定义单元 1021之间的间隔最好尽可能大。 可选地， 相邻两个所述像素定义单元 1021之间的间隔大于其对 应的相邻两个所述像素阳极 1011之间的间隔。
如图 2 所示， 每个像素阳极 1011 上方具有一个像素定义单元 1021， 相邻两个像素阳极 1011 上方的相邻两个像素定义单元 1021 之间具有一定的间隔区域 A, 这样可以使得有机发光层 103周围的像 素定义层材质变少， 即有机发光层 103 出射的光线在像素定义单元 1021 中经过的光程较短， 被像素定义层材质吸收的能量相对较少。 而传统的像素定义层材质则充满了两个相邻发光区域之间，使得发光 区域中的发光层出射的光线在像素定义层中的光程较长，被像素定义 层材料吸收较多的能量。
此外， 本发明中相邻两个所述像素阳极 1011之间的间隔在工艺 允许范围内尽可能小， 这样可以使得像素阳极 1011的面积变大； 另 外， 在保证发光区域的面积不受影响的情况下， 尽可能保证界定发光 区域的像素定义单元 1021的厚度较薄， 这样可使得其所覆盖像素阳 极 1011的面积较小。 从结构上可以看出， 相邻两个所述像素定义单 元 1021之间的间隔大于其对应的相邻两个所述像素阳极 1011之间的 间隔，使得所述像素阳极 1011未被所述像素定义单元 1021覆盖的边 缘区域面积变大。这样不但保证了有机发光层 103侧面出射的光线经 过像素定义层的光程较短， 且大部分光线在照射到像素阳极 1011未 被所述像素定义单元 1021覆盖的边缘区域时被反射至显示屏外部， 提高了光的取出效率。
可选地， 可以通过选择所述像素定义单元 1021的形状， 和 /或尽 量减薄其厚度来增加所述像素定义单元 1021之间的间隔。 所述像素 定义单元 1021横截面可以为圆环形、 椭圆环形、 长方环形、 正环方 形等， 其厚度范围介于 3~5 m之间。
所述有机发光层 103位于所述像素定义单元 1021界定出的发光 区域， 使得所述像素定义单元 1021围住所述有机发光层 103。
可选地，所述像素定义单元 1021的高度大于所述有机发光层 103 的高度， 更进一歩地， 所述像素定义单元 1021的高度大于所述有机 发光层 103和阴极层 104的厚度之和。所述有机发光层 103的高度介 于 0.2-0.3 之间， 而所述像素定义单元 1021的高度介于 1.3~2.0 m之间， 优选为 1·5 μ ιτι。
本发明提出的上述结构中， 所述多个像素定义单元 1021为各自 独立的单元， 且每个像素定义单元 1021具有较小的厚度， 且它们之 间具有足够大的间隔， 且其对应的像素阳极 1011之间的间隔又足够 小， 这样使得位于每个像素定义单元 1021中间的有机发光层 103发 出的光经过像素定义单元 1021的光程较短， 且当其从所述像素定义 单元 1021的侧面出射并折射以后， 大量的光会照射在所述像素阳极 1011 上， 经所述像素阳极反射后输出。 因此， 这种方式能够大大增 加光的出光效率， 减少了光的损失。
此外，本发明中的像素定义单元的凸起表面还可以是带有一定弧 度的表面， 即如图 2所示， 其凸起表面成拱形。 这样的话， 当有机发 光层 103出射的光线从所述像素定义单元 1021的凸起表面出射时， 由于能够减小出射光线的入射角，使得原本入射角大于临界角的出射 光线的入射角小于临界角，从而减少出射光线在透明覆盖层内部的全 反射， 减少出射光线的光损失， 进一歩提高了 OLED器件的光取出效 率。
图 3 示出了本发明中发光层侧面出射光经过像素定义单元时的 光路图。 如图 3 ( a ) 所示， 从有机发光层 103发出的一部分光 L从 像素定义单元 1021的侧面出射进入空气后发生折射， 所述折射光的 大部分光照射在所述像素阳极 1011后被反射， 反射后的绝大部分光 能够直接出射至外部。 如图 3 ( b) 所示， 从有机发光层 103发出的 还有一部分光 L' 从像素定义单元 1021的凸起表面出射， 由于该部 分光 L' 的入射面即所述凸起表面具有一定的弧度， 使得相较于平面 入射面其入射角要小，因此能够降低该部分光 L'发生全反射的几率。 图 3 ( b ) 的虚框中示出了凸起表面为平面和具有弧度的表面时光路 的对比图， 可以看出， 在平面的情况下发生全反射的光， 则在具有一 定弧度的表面下不发生全反射， 而能够直接出射出去。
本发明实施例还提供了一种显示装置，包括如上所述的像素单元。 其中， 像素单元的结构同上述实施例， 在此不再赘述。 另外， 显示装 置其他部分的结构可以参考现有技术， 对此本文不再详细描述。该显 示装置可以为： 电子纸、 电视、 显示器、 数码相框、 手机、 平板电脑 等具有任何显示功能的产品或部件。
图 4 示出了本发明实施例提供的一种像素单元的制作方法流程 示意图。 图 5 ( a ) ~5 ( d ) 示出了本发明实施例提供的一种像素单元 的制作工艺流程图。 如图 4、 5 ( a ) ~5 ( d ) 所示， 所述像素单元的 制作方法包括：
歩骤 401: 在基板上沉积金属材料形成阳极层 101， 并对其进行 光刻和刻蚀形成阳极层的图案，所述阳极层的图案包括阵列分布的多 个像素阳极 1011， 如图 5 ( a ) 所示；
可选地，形成所述阳极层的金属材料可以为不透明且具有高反射 率的金属材料， 如银或铝等， 可通过磁控溅射、 热蒸发或其它成膜方 法在基板上沉积所述金属材料而形成所述阳极层。
可选地， 在进行光刻和刻蚀形成阵列分布的多个像素阳极时， 使 得所述多个像素阳极 1011的面积尽可能大， 即它们之间的间隔尽可 能小，只要保证相邻两个像素阳极 1011之间不导电即可。这是因为， 像素阳极 1011的面积越大， 有机发光层发出的光线照射在基板上的 可能性就越小， 被基板吸收的光也就越少， 有利于光的出射。
可选地， 所述像素阳极之间的间隔可以介于 0.5-1.5 μ m之间。 歩骤 402: 在所述阳极层表面涂覆一层像素定义层 102， 并对其 进行光刻工艺形成多个具有一定间隔的像素定义单元 1021， 如图 5 ( b)所示， 其中所述像素定义单元 1021为具有开口部分的四周环绕 型结构， 且每个所述像素定义单元 1021对应一个像素阳极 1011， 使 得每个像素定义单元 1021在所对应的像素阳极上界定出一发光区域， 所述发光区域位于所述开口部分；
可选地， 所述像素定义层材料选自高透光率的绝缘材料， 具体包 括透明的有机材料， 如聚酰亚胺系列的材料等。
可选地， 在形成所述多个像素定义单元之后， 尽可能地减薄所述 像素定义单元的厚度。所述像素定义单元的厚度范围介于 3~5 μ m之 间。在保证稳定性的情况下， 所述像素定义单元的厚度可以尽可能地 薄，这样可以减少有机发光层发出的光在像素定义单元中的传输路径， 而且还能增大像素阳极上用于反射有机发光层发出光的面积，从而有 利于光的出射。另外， 还可以通过选择适当的像素定义单元的形状来 增大像素阳极上用于反射有机发光层发出光的面积。所述像素定义单 元的形状包括圆环形、 椭圆环形、 长方环形、 正方环形等。
可选地， 通过侧面减薄所述像素定义单元， 使得其凸起表面形成 为带有一定弧度的表面，其弧度大小以尽可能减少光在凸起表面上的 全反射为准进行选择。
歩骤 403: 在每个所述像素定义单元 1021界定出的发光区域内 形成有机发光层 103， 如图 5 (c) 所示；
可选地，所述有机发光层 103可以是利用掩膜板在所述像素定义 单元 1021界定出的发光区域依次蒸镀多种发光材料而形成， 所述多 种发光材料为形成空穴注入层、 空穴传输层、 发光层、 电子传输层和 电子注入层的材料。
所述有机发光层 103位于所述像素定义单元 1021的开口部分， 且其高度小于所述像素定义单元 1021的高度。 所述有机发光层 103 的高度介于 0.2-0.3 μ m之间， 而所述像素定义单元 1021的高度介于 1·3~2·0 μ ηι之间， 优选为 1·5 μ ηι。
歩骤 404:在所述有机发光层 103上沉积金属材料形成阴极层 104， 如图 5 ( d) 所示。
在形成有有机发光层 103的基板上沉积一层金属材料，所述金属 材料可选自银、铝和镁中的一种， 并通过曝光和刻蚀的方式将有机发 光层之外区域的阴极层除去，最终仅保留在有机发光层表面的阴极层。
可选地， 为了保证透光性， 所述阴极层的厚度优选为 0.1-0.3 之间， 且所述阴极层选用透光率较高的透明导电材质。
可选地， 所述歩骤 402具体可包括以下歩骤：
歩骤 4021: 在所述阳极层上涂覆一层像素定义层材料；
歩骤 4022: 在所述像素定义层材料上涂覆一层光刻胶； 歩骤 4023 : 利用掩膜板对所述光刻胶进行曝光， 并对所述像素 定义层进行刻蚀形成多个具有一定间隔的像素定义单元，每个像素定 义单元对应一个像素阳极。
本发明通过将像素定义层设置成多个相互独立且具有一定间隔 的像素定义单元， 以便光线在像素定义单元中的光程变短； 本发明还 通过减小像素阳极之间的间隔以及将有机发光层四周的像素定义单 元厚度减薄的方式， 使得像素阳极的面积增大， 有机发光层发出的光 在像素定义层中的光程缩短， 被像素阳极反射的概率增大， 而被基板 吸收的概率减小， 使得出光效率大大增加。
此外，本发明还通过将像素定义单元的凸起表面设置成具有一定 弧度的表面，使得光线从所述像素定义单元的凸起表面出射时不容易 发生全反射， 减少了出射光线的损失， 提高了光取出效率。
以上所述的具体实施例， 对本发明的目的、技术方案和有益效果 进行了进一歩详细说明， 应理解的是， 以上所述仅为本发明的具体实 施例而已， 并不用于限制本发明， 凡在本发明的精神和原则之内， 所 做的任何修改、 等同替换、 改进等， 均应包含在本发明的保护范围之 内。

Claims

权 利 要 求
1、 一种像素单元， 包括： 阳极层、 像素定义层、 有机发光层与 阴极层； 其中， 所述阳极层包括阵列分布的多个像素阳极， 所述像素 定义层位于所述阳极层之上，且包括多个具有一定间隔的像素定义单 元； 所述像素定义单元与所述像素阳极一一对应， 且每个像素定义单 元在对应的所述像素阳极上界定出一发光区域，所述有机发光层位于 所述发光区域中， 所述阴极层位于所述有机发光层上。
2、 如权利要求 1所述的像素单元， 其中， 相邻的所述像素定义 单元之间的间隔大于其对应的相邻的所述像素阳极之间的间隔。
3、 如权利要求 1所述的像素单元， 其中， 所述像素定义单元的 高度高于所述有机发光层和阴极层厚度之和。
4、 如权利要求 1-3任一项所述的像素单元， 其中， 所述像素定 义单元的厚度范围介于 3~5 μ m之间， 高度介于 1.3-2.0 μ m之间。
5、 如权利要求 1-3任一项所述的像素单元， 其中， 相邻的所述 像素阳极之间的间隔介于 0.5-1.5 μ m。
6、 如权利要求 1所述的像素单元， 其中， 所述像素定义单元的 凸起表面为具有一定弧度的表面。
7、 一种像素单元的制备方法， 其包括：
形成阳极层， 并对其进行刻蚀形成阵列分布的多个像素阳极； 在所述阳极层上形成像素定义层，并对其刻蚀形成多个具有一定 间隔的像素定义单元， 所述像素定义单元与所述像素阳极一一对应， 且使得每个像素定义单元在其对应的所述像素阳极上界定出一发光 区域；
在所述发光区域内形成有机发光层；
在有机发光层上形成阴极层。
8、 如权利要求 7所述的像素单元的制备方法， 其还包括： 减薄 所述多个像素定义单元的厚度，使得相邻的所述像素定义单元之间的 间隔大于其对应的相邻的所述像素阳极之间的间隔。
9、 如权利要求 7所述的像素单元的制备方法， 其还包括： 侧面 减薄所述多个像素定义单元， 使得其凸起表面具有一定弧度。 装置， 其包括如权利要求 1-6任一项所述的像素单
PCT/CN2014/084511 2014-05-16 2014-08-15 一种像素单元及其制作方法、显示装置 Ceased WO2015172450A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/648,125 US9799709B2 (en) 2014-05-16 2014-08-15 Pixel unit, method of manufacturing the same and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410208922.1 2014-05-16
CN201410208922.1A CN103996697B (zh) 2014-05-16 2014-05-16 一种像素单元及其制作方法、显示装置

Publications (1)

Publication Number Publication Date
WO2015172450A1 true WO2015172450A1 (zh) 2015-11-19

Family

ID=51310804

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2014/084511 Ceased WO2015172450A1 (zh) 2014-05-16 2014-08-15 一种像素单元及其制作方法、显示装置

Country Status (3)

Country Link
US (1) US9799709B2 (zh)
CN (1) CN103996697B (zh)
WO (1) WO2015172450A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104681592B (zh) * 2014-12-23 2018-01-19 上海天马有机发光显示技术有限公司 一种显示面板及其制作方法和显示装置
CN106501998B (zh) 2016-10-26 2020-01-17 京东方科技集团股份有限公司 背光源、显示装置及其驱动方法
CN108735104B (zh) * 2018-06-01 2020-11-03 京东方科技集团股份有限公司 显示面板、显示装置和制作显示面板的方法
CN111599942B (zh) * 2020-05-27 2022-12-27 京东方科技集团股份有限公司 阵列基板、显示面板及显示装置
CN111769215B (zh) 2020-06-23 2021-10-08 武汉华星光电半导体显示技术有限公司 显示面板的制造方法及显示面板
CN114639712B (zh) * 2022-03-31 2024-12-06 湖北长江新型显示产业创新中心有限公司 显示面板及其制作方法及电子设备
CN116347938A (zh) * 2023-04-10 2023-06-27 京东方科技集团股份有限公司 显示基板和显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1462477A (zh) * 2001-04-26 2003-12-17 皇家菲利浦电子有限公司 电致发光器件及其制造方法
CN101049049A (zh) * 2004-10-28 2007-10-03 先锋株式会社 有机电致发光显示面板及其制造方法
JP2008004290A (ja) * 2006-06-20 2008-01-10 Nippon Hoso Kyokai <Nhk> 有機ｅｌ表示装置および有機ｅｌ表示装置の製造方法
JP4613637B2 (ja) * 2005-02-23 2011-01-19 凸版印刷株式会社 有機エレクトロルミネッセンス素子の製造方法
US8008859B2 (en) * 2008-06-03 2011-08-30 Samsung Mobile Display Co., Ltd. Organic light emitting display device
TW201244222A (en) * 2011-02-14 2012-11-01 Sumitomo Chemical Co Organic electroluminescence apparatus and method for manufacturing the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4333728B2 (ja) * 2006-09-14 2009-09-16 セイコーエプソン株式会社 電気光学装置の製造方法および電子機器
KR100943948B1 (ko) * 2008-01-08 2010-02-26 삼성모바일디스플레이주식회사 표시 장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1462477A (zh) * 2001-04-26 2003-12-17 皇家菲利浦电子有限公司 电致发光器件及其制造方法
CN101049049A (zh) * 2004-10-28 2007-10-03 先锋株式会社 有机电致发光显示面板及其制造方法
JP4613637B2 (ja) * 2005-02-23 2011-01-19 凸版印刷株式会社 有機エレクトロルミネッセンス素子の製造方法
JP2008004290A (ja) * 2006-06-20 2008-01-10 Nippon Hoso Kyokai <Nhk> 有機ｅｌ表示装置および有機ｅｌ表示装置の製造方法
US8008859B2 (en) * 2008-06-03 2011-08-30 Samsung Mobile Display Co., Ltd. Organic light emitting display device
TW201244222A (en) * 2011-02-14 2012-11-01 Sumitomo Chemical Co Organic electroluminescence apparatus and method for manufacturing the same

Also Published As

Publication number Publication date
US20160260786A1 (en) 2016-09-08
CN103996697A (zh) 2014-08-20
CN103996697B (zh) 2016-06-15
US9799709B2 (en) 2017-10-24

Similar Documents

Publication Publication Date Title
US11404670B2 (en) Light-emitting device and method for manufacturing same, and display device
US11296160B2 (en) Display substrate, display apparatus, and method of fabricating the display substrate
CN110504275B (zh) 阵列基板及其制作方法、显示面板和显示装置
US9331309B2 (en) Display apparatus, method for manufacturing display apparatus, and method for designing display apparatus
CN107170904B (zh) Oled显示基板及其制作方法、显示装置
CN105304679B (zh) 一种底发光型oled显示面板
CN104362257B (zh) 一种顶发射oled器件及其制作方法、显示设备
WO2015172450A1 (zh) 一种像素单元及其制作方法、显示装置
TWI549329B (zh) 有機發光裝置及其製造方法
CN106941113A (zh) 一种oled显示面板及其制备方法、显示装置
CN104037357A (zh) 一种有机发光显示装置及其制造方法
US20190103418A1 (en) Array substrate and method for manufacturing thereof, and display device
CN111341812B (zh) 一种显示基板及其制备方法、显示装置
CN107112441B (zh) 制造用于有机发光元件的光提取基底的方法、用于有机发光元件的光提取基底及包括其的有机发光元件
CN105826354A (zh) 一种阵列基板、显示面板及显示装置
CN115064567B (zh) 一种显示面板、显示面板的制作方法及显示装置
CN109461842A (zh) Oled阳极、oled基板及其制作方法、显示装置
CN111430445A (zh) 一种显示基板及其制备方法、显示装置
CN117440735A (zh) 显示面板及显示装置
CN110137233B (zh) 阵列基板及其制备方法、显示装置
CN110320702B (zh) 基板及其制备方法、显示面板
CN108511623B (zh) 光取出结构、显示屏体及其制作方法、显示装置
CN212934665U (zh) 一种显示面板
WO2025180118A1 (zh) 显示面板及其制备方法
CN114759074B (zh) 显示装置及其制作方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 14648125

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14891793

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 10/05/2017)

122 Ep: pct application non-entry in european phase

Ref document number: 14891793

Country of ref document: EP

Kind code of ref document: A1