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WO2015169023A1 - Oled发光器件及其制备方法、显示装置 - Google Patents

Oled发光器件及其制备方法、显示装置 Download PDF

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Publication number
WO2015169023A1
WO2015169023A1 PCT/CN2014/086799 CN2014086799W WO2015169023A1 WO 2015169023 A1 WO2015169023 A1 WO 2015169023A1 CN 2014086799 W CN2014086799 W CN 2014086799W WO 2015169023 A1 WO2015169023 A1 WO 2015169023A1
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Prior art keywords
electrode
layer
emitting device
photoresist
substrate
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French (fr)
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马文昱
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to US14/443,855 priority Critical patent/US9543539B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair

Definitions

  • Embodiments of the present invention relate to an OLED light emitting device, a method of fabricating the same, and a display device.
  • OLED Organic Light Emitting Diode
  • the light output efficiency of OLED is relatively low. Generally, only a small amount of light energy can be emitted into the air. On the one hand, the reason is that surface light is formed when light emitted from the light emitting layer is incident on the surface of a flat metal electrode. Electromagnetic waves propagate laterally along the metal surface and cannot escape into the air.
  • an OLED light emitting device comprising: a substrate, a first electrode, an organic material functional layer, and a second electrode, which are sequentially disposed on the substrate.
  • the OLED device further includes: a non-planar layer disposed between the first electrode and the base substrate, and a side of the non-flat layer and the corresponding portion of the first electrode remote from the substrate substrate The surface is not flat.
  • the first electrode and/or the second electrode on the light exit side of the OLED light emitting device comprise a metal layer.
  • the uneven layer is a photoresist layer doped with fine particles.
  • the surface of the photoresist layer and the side of the corresponding portion of the first electrode that is away from the substrate substrate exposes the fine particles.
  • the fine particles have a particle diameter of less than 10 nm.
  • the fine particles include: minute ceramic particles, or minute metal particles.
  • the OLED light emitting device further includes an insulating layer disposed between the photoresist layer and the first electrode.
  • the non-flat layer and the first electrode corresponding portion include polysilicon.
  • the polycrystalline silicon is obtained by crystallizing amorphous silicon.
  • the first electrode comprises an opaque metal layer and the second electrode comprises a translucent metal layer.
  • a display device comprising the OLED light emitting device as described above.
  • the display device further includes a thin film transistor disposed between the base substrate and the non-planar layer of the OLED light emitting device.
  • a drain of the thin film transistor is electrically connected to a first electrode of the OLED light emitting device.
  • the uneven layer is a photoresist layer doped with fine particles, and the doping concentration of the fine particles is between 80% and 90%.
  • a method of fabricating an OLED light emitting device comprising: sequentially forming a first electrode, an organic material functional layer, and a second electrode on a substrate.
  • the method further includes forming an uneven layer between the first electrode and the base substrate, and a surface of the non-planar layer and a portion of the corresponding portion of the first electrode that is away from the substrate substrate Not flat.
  • the first electrode and/or the second electrode on the light exit side of the OLED light emitting device comprise a metal layer.
  • the uneven layer is a photoresist layer doped with fine particles; wherein a surface of the photoresist layer and a side of the corresponding portion of the first electrode remote from the substrate substrate exposes the tiny Particles.
  • Forming the photoresist layer includes: forming a photoresist film doped with fine particles on the base substrate; exposing the substrate on which the photoresist film is formed by using a half-step or gray-scale mask After development, a photoresist semi-retaining portion and a photoresist completely remaining portion are formed; wherein the photoresist semi-retaining portion corresponds to a region of the first electrode, and a surface of the photoresist semi-retaining portion is exposed The fine particles doped therein, the photoresist completely remaining portion corresponding to the remaining regions.
  • the non-flat layer and the first electrode corresponding portion include polysilicon.
  • the forming the non-planar layer includes: forming an amorphous silicon film on the base substrate; and crystallizing a region corresponding to the first electrode of the amorphous silicon film to convert amorphous silicon into Polysilicon forms the non-planar layer.
  • the first electrode comprises an opaque metal layer and the second electrode comprises a translucent metal layer.
  • FIG. 1 is a schematic structural diagram of an OLED light emitting device according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of an OLED light emitting device according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of an OLED light emitting device according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of an OLED display device according to an embodiment of the present invention.
  • 5-6 are schematic diagrams of processes for preparing a photoresist layer according to an embodiment of the present invention.
  • An embodiment of the present invention provides an OLED light emitting device 10, as shown in FIG. 1 to FIG. 3, the OLED light emitting device 10 includes: a substrate substrate 100, and a first electrode 200 and an organic material function sequentially disposed on the substrate The layer 300 and the second electrode 400; further the OLED device 10 further includes: a non-planar layer 500 disposed between the first electrode 200 and the base substrate 100, and the non-flat layer 500 and the The surface of the corresponding portion of the first electrode 200 that is away from the side of the base substrate 100 is not flat.
  • the first electrode 200 and/or the second electrode 400 located on the light exit side of the OLED light emitting device 10 includes a metal layer.
  • the material and structure of the uneven layer 500 are not limited as long as the surface of the portion corresponding to the first electrode 200 that is away from the substrate 100 is not flat.
  • an insulating layer is disposed between the uneven layer 500 and the first electrode 200.
  • the first electrode 200 located above is prepared and formed.
  • the portion of the uneven layer 500 that is opposite to the first electrode 200 is away from the lining
  • the first electrode 200 formed thereabove also changes with the change of the upper surface of the uneven layer 500, and the organic material located above the first electrode 200 is also the same.
  • the functional layer 300 and the second electrode 400 also vary, such that the first electrode 200, the organic material functional layer 300, and the second electrode 400 have a non-flat surface.
  • the first electrode 200 may be a cathode or an anode
  • the second electrode 400 may be an anode or a cathode. That is, if the first electrode 200 is a cathode, the second electrode 400 is an anode; and if the first electrode 200 is an anode, the second electrode 400 is a cathode.
  • the organic material functional layer 300 which may include at least a light-emitting layer, on the basis of which the efficiency of electron and hole injection into the light-emitting layer can be improved, the organic material functional layer 300 may further include an electron transport layer and a hole. a transport layer and an electron injection layer disposed between the cathode and the electron transport layer, and a functional layer such as a hole injection layer disposed between the hole transport layer and the anode.
  • the light emitted by the light-emitting layer may be red light, green light, or blue light; of course, the light emitted by the light-emitting layer may also be white light, which is not limited herein.
  • the OLED light emitting device 10 may be, for example, a top emission type, for example, the second electrode 400 includes a transparent or translucent (ie, relatively thin) metal layer, and the first electrode 200 includes opaque (ie, a relatively thick layer of metal.
  • the OLED light emitting device 10 may also be of a bottom emission type, for example, the first electrode 200 includes a transparent or translucent (ie, relatively thin) metal layer, and the second electrode 400 includes opacity (ie, thickness). A relatively thick layer of metal.
  • the OLED light emitting device 10 can also be a double-sided light emitting type.
  • the second electrode 400 and the first electrode 200 each include a transparent or translucent (ie, relatively thin) metal layer.
  • the opaque conductive material may be, for example, silver (Ag) having a relatively thick thickness
  • the translucent conductive material may be, for example, silver having a relatively small thickness
  • the embodiment of the present invention provides an OLED light emitting device 10, including: a substrate substrate 100, which is sequentially disposed on the substrate substrate, a first electrode 200, an organic material functional layer 300, and a second electrode 400; further the OLED The device 10 further includes: the first electrode 200 and the lining disposed The uneven layer 500 between the base substrates 100, and the surface of the uneven layer 500 corresponding to the first electrode 200 and away from the substrate 100 side is not flat.
  • the first electrode 200 and/or the second electrode 400 located on the light exiting side of the OLED light emitting device comprise a metal layer.
  • the first electrode 200 and the second electrode 400 prepared thereon are both non-flat electrodes. a layer such that when light emitted from the organic material functional layer 300 is incident on the first electrode 200 and/or the second electrode 400 of the permeable metal material, loss due to plasma electromagnetic waves generated by the metal surface can be reduced, Improve light output efficiency.
  • the first electrode 200 includes a reflective opaque metal layer
  • the second electrode 400 includes a translucent metal layer having a transflective. Since the opaque first electrode 200, the organic material functional layer 300, and the translucent second electrode 400 can form a microcavity, the interference effect (microcavity effect) of light in the microcavity can be utilized to further increase the light output. effectiveness.
  • the portion of the uneven layer 500 and the first electrode 200 includes polysilicon.
  • the polysilicon may be obtained by crystallizing amorphous silicon.
  • polycrystalline silicon film can be obtained by crystallizing only the amorphous silicon film corresponding to the first electrode 200 to have a relatively large roughness, and the remaining portion can be kept non-crystallization because it is not subjected to crystallization treatment.
  • the original flatness of the crystalline silicon film can be obtained by crystallizing only the amorphous silicon film corresponding to the first electrode 200 to have a relatively large roughness, and the remaining portion can be kept non-crystallization because it is not subjected to crystallization treatment.
  • the uneven layer 500 is a photoresist layer 500a doped with fine particles 500b.
  • the surface of the photoresist layer 500a and the portion of the corresponding portion of the first electrode 200 that is away from the substrate 100 is exposed to the fine particles 500b.
  • etching resist material and a material as the fine particles, it is convenient to etch a portion of the photoresist material in a region corresponding to the first electrode 200, The particles 500b are exposed as they are not etched, forming a non-flat surface.
  • each of the fine particles 500b has an irregular shape, even if all the fine particles 500b are closely arranged, the surface of the photoresist layer 500a away from the base substrate 100 may still be due to the irregular shape of the fine particles 500b. It becomes uneven.
  • a region corresponding to the first electrode 200 may correspond to a semi-reserved portion of the photoresist, and the remaining portion corresponds to a completely remaining portion of the photoresist, and then After development, the fine particles 500b of the semi-retained portion of the photoresist are exposed to form a non-flat surface in this region.
  • the gap between the fine particles 500b may not be too large. Therefore, the doping concentration of the fine particles 500b is not too low and the particle diameter is not too large. Therefore, in the embodiment of the present invention, for example, the doping concentration of the fine particles 500b is between 80% and 100%.
  • the particle size of the fine particles is in the range of 10 nm.
  • the particle diameter of the fine particles 500b is also possible to set the particle diameter of the fine particles 500b to be different in size to further reduce the gap between the particles.
  • the fine particles 500b include: minute ceramic particles, or minute metal particles.
  • the chemical properties of the above-mentioned fine particles and the photoresist can be made different, so that the light in the photoresist film doped with the fine particles 500b under the first electrode 200 When the gel is removed, a part of the fine particles 500b located therein is not affected.
  • the OLED light emitting device 10 further includes a photoelectrode layer 500a and the first electrode 200 disposed therebetween.
  • the insulating layer 600 is such that the conductive metal particles in the photoresist layer 500a are insulated from the first electrode 200.
  • the material of the insulating layer 600 may be silicon dioxide, silicon nitride, or the like.
  • the embodiment of the invention further provides a display device comprising the above OLED light emitting device 10.
  • the OLED light-emitting device 10 can be applied to a passive matrix type display device, and can also be applied to an active matrix display device, which is not limited herein.
  • Embodiments of the present invention provide a display device including the above OLED light emitting device 10. Since the surface of the non-flat layer 500 and the portion of the corresponding portion of the first electrode 200 that is away from the substrate 100 is not flat, the first electrode 200 and the second electrode 400 prepared thereon are both non-flat electrodes. a layer such that when light emitted from the organic material functional layer 300 is incident on the first electrode 200 and/or the second electrode 400 of the permeable metal material, loss due to plasma electromagnetic waves generated by the metal surface can be reduced, Improve light output efficiency.
  • the display device provided by the embodiment of the present invention is an active matrix display device, that is, as shown in FIG.
  • the display device further includes a thin film transistor 700 disposed between the base substrate 100 and the uneven layer 500 of the OLED light emitting device 10.
  • the thin film transistor 700 includes a gate, a gate insulating layer, a semiconductor active layer, a source and a drain; and the thin film transistor 700 may be a top gate type or a bottom gate type.
  • the second electrode 400 is required to pass through the organic material functional layer 300 and the first electrode 200 to be electrically connected to the drain.
  • the aspect may cause the second electrode 400 to be short-circuited with the first electrode 200.
  • the preparation process is relatively complicated. Based on this, in the embodiment of the present invention, the drain of the thin film transistor 700 is electrically connected to the first electrode 200.
  • the voltage of the second electrode 400 as a cathode is constant, and when the first electrode 200 is used as a cathode, the voltage of the second electrode 400 as an anode is constant.
  • a package substrate 800 disposed above the second electrode 400 should also be included.
  • the first electrode 200 needs to be electrically connected to the drain of the thin film transistor 700 through a via provided on the uneven layer 500. Therefore, the uneven layer 500 is doped with In the case of the photoresist layer 500a of the fine particles 500b, the doping concentration of the fine particles 500b cannot be too high, and it is not easy to form via holes on the photoresist layer 500a. Based on this, in the embodiment of the present invention, it is preferable that the doping concentration of the fine particles 500b is between 80% and 90%.
  • a flat layer 900 is further disposed between the thin film transistor 700 and the uneven layer 500, so that when the uneven layer 500, the first electrode 200, and the like are subsequently formed, It is avoided that the thin film transistor 700 below has a height difference and causes a disconnection or the like.
  • the embodiment of the present invention further provides a method for fabricating an OLED light emitting device, the method comprising: sequentially forming a first electrode 200, an organic material functional layer 300, and a second electrode 400 on a substrate substrate 100; The method includes: forming a non-flat layer 500 between the first electrode 200 and the base substrate 100, and a side of the non-planar layer 500 corresponding to the first electrode 200 away from the substrate 100 The surface is not flat.
  • the first electrode 200 and/or the second electrode 400 located on the light exit side of the OLED light emitting device 10 includes a metal layer.
  • the non-planar layer 500 is located below the first electrode 200, that is, the non-planar layer 500 located below is prepared and formed, the first electrode 200 located above is prepared and formed.
  • the first electrode 200 is formed thereon also along with the upper surface of the uneven layer 500.
  • the organic material functional layer 300 and the second electrode 400 located above the first electrode 200 also change, so that the first electrode 200, the organic material functional layer 300 and the second electrode 400 are changed. Has a non-flat surface.
  • the embodiment of the present invention provides a method for fabricating an OLED light-emitting device, wherein the surface of the non-planar layer 500 and the portion of the first electrode 200 that is away from the substrate 100 is not flat, so that the surface is prepared thereon.
  • the first electrode 200 and the second electrode 400 are both non-flat electrode layers such that when light emitted from the organic material functional layer 300 is incident on the first electrode 200 and/or the second electrode 400 of the permeable metal material, The loss due to the plasma electromagnetic wave generated by the light on the metal surface can be reduced, and the light output efficiency is improved.
  • the first electrode 200 includes a reflective opaque metal layer
  • the second electrode 400 includes a translucent metal layer having a semi-transverse permeability. Since the opaque first electrode 200, the organic material functional layer 300, and the translucent second electrode 400 can form a microcavity, the interference effect (microcavity effect) of light in the microcavity can be utilized to further increase the light output. effectiveness.
  • the portion of the uneven layer 500 and the first electrode 200 includes polysilicon.
  • forming the uneven layer 500 includes:
  • PECVD plasma enhanced chemical vapor deposition
  • the amorphous silicon film is crystallized in a region corresponding to the first electrode 200 to convert amorphous silicon into polycrystalline silicon to form the uneven layer 500.
  • the crystallization treatment may include a laser annealing process (ELA), a metal induced crystallization process (MIC), a solid phase crystallization process (SPC), and the like.
  • ELA laser annealing process
  • MIC metal induced crystallization process
  • SPC solid phase crystallization process
  • the amorphous silicon film may be subjected to a dehydrogenation process in a high temperature oven to prevent hydrogen explosion during crystallization and to reduce the density of defect states inside the film after crystallization.
  • the uneven layer 500 is a photoresist layer 500a doped with fine particles 500b; wherein the photoresist layer 500a is away from a corresponding portion of the first electrode 200 The surface on the side of the base substrate 100 exposes the fine particles 500b.
  • forming the photoresist layer 500a includes:
  • a photoresist film 5001 doped with fine particles 500b is formed on the base substrate 100.
  • a photoresist semi-retaining portion 5001a and a photoresist completely reserved portion are formed.
  • the photoresist completely remaining portion 5001b corresponds to the remaining regions to form the photoresist layer 500a.

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Abstract

提供了一种OLED发光器件及其制备方法、显示装置。该OLED发光器件包括：衬底基板，依次设置在所述衬底基板上的第一电极、有机材料功能层、以及第二电极。所述OLED器件还包括：设置在所述第一电极和所述衬底基板之间的非平坦层，且所述非平坦层与所述第一电极对应部分的远离所述衬底基板一侧的表面非平坦。位于所述OLED发光器件出光侧的第一电极和/或第二电极包括金属层。由此，可以减小由于光形成金属表面等离子体电磁波而导致的损耗，提高光的输出效率。

Description

OLED发光器件及其制备方法、显示装置 技术领域
本发明的实施例涉及一种OLED发光器件及其制备方法、显示装置。
背景技术
有机发光二极管(Organic Light Emitting Diode，简称OLED)是一种有机薄膜电致发光器件，其具有制备工艺简单、成本低、易形成柔性结构、视角宽等优点。因此，利用有机发光二极管的显示技术已成为一种重要的显示技术。
目前，OLED的光输出效率比较低，一般来说，只有很少的光能可以出射到空气中，其一方面原因是从发光层发出的光入射到平坦的金属电极表面时，形成表面等离子体电磁波沿金属表面横向传播而无法出射到空气中。
发明内容
根据本发明的实施例，提供一种OLED发光器件，包括：衬底基板，依次设置在所述衬底基板上的第一电极、有机材料功能层、以及第二电极。所述OLED器件还包括：设置在所述第一电极和所述衬底基板之间的非平坦层，且所述非平坦层与所述第一电极对应部分的远离所述衬底基板一侧的表面非平坦。位于所述OLED发光器件出光侧的第一电极和/或第二电极包括金属层。
例如，所述非平坦层为掺杂有微小颗粒的光刻胶层。所述光刻胶层与所述第一电极对应部分的远离所述衬底基板一侧的表面露出所述微小颗粒。
例如，所述微小颗粒的粒径小于10nm。
例如，所述微小颗粒包括：微小的陶瓷颗粒、或微小的金属颗粒。在所述微小颗粒包括微小的金属颗粒的情况下，所述OLED发光器件还包括设置在所述光刻胶层和所述第一电极之间的绝缘层。
例如，所述非平坦层与所述第一电极对应部分包括多晶硅。所述多晶硅是对非晶硅进行晶化处理得到的。
例如，所述第一电极包括不透明的金属层，所述第二电极包括半透明金属层。
根据本发明的实施例，提供一种显示装置，包括如上所述的OLED发光器件。
例如，所述显示装置还包括设置在衬底基板和所述OLED发光器件的非平坦层之间的薄膜晶体管。所述薄膜晶体管的漏极与所述OLED发光器件的第一电极电连接。
例如，所述非平坦层为掺杂有微小颗粒的光刻胶层，所述微小颗粒的掺杂浓度在80％～90％之间。
根据本发明的实施例，提供一种OLED发光器件的制备方法，包括：在衬底基板上依次形成第一电极、有机材料功能层、以及第二电极。所述方法还包括：在所述第一电极和所述衬底基板之间形成非平坦层，且所述非平坦层与所述第一电极对应部分的远离所述衬底基板一侧的表面非平坦。位于所述OLED发光器件出光侧的第一电极和/或第二电极包括金属层。
例如，所述非平坦层为掺杂有微小颗粒的光刻胶层；其中，所述光刻胶层与所述第一电极对应部分的远离所述衬底基板一侧的表面露出所述微小颗粒。形成所述光刻胶层包括：在所述衬底基板上形成掺杂有微小颗粒的光刻胶薄膜；采用半阶或灰阶掩模板对形成有所述光刻胶薄膜的基板进行曝光、显影后，形成光刻胶半保留部分和光刻胶完全保留部分；其中，所述光刻胶半保留部分与所述第一电极的区域对应，且所述光刻胶半保留部分的表面露出掺杂在其中的所述微小颗粒，所述光刻胶完全保留部分与其余区域对应。
例如，所述非平坦层与所述第一电极对应部分包括多晶硅。所述形成所述非平坦层包括：在所述衬底基板上形成非晶硅薄膜；对所述非晶硅薄膜与所述第一电极对应的区域进行晶化处理，使非晶硅转换为多晶硅，形成所述非平坦层。
例如，所述第一电极包括不透明的金属层，所述第二电极包括半透明金属层。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实 施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的一种OLED发光器件的结构示意图；
图2为本发明实施例提供的一种OLED发光器件的结构示意图；
图3为本发明实施例提供的一种OLED发光器件的结构示意图；
图4为本发明实施例提供的一种OLED显示装置的结构示意图；
图5-6为本发明实施例提供的制备光刻胶层的过程示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明实施例提供一种OLED发光器件10，如图1至图3所示，该OLED发光器件10包括：衬底基板100，依次设置在所述衬底基板上第一电极200、有机材料功能层300、以及第二电极400；进一步所述OLED器件10还包括：设置在所述第一电极200和所述衬底基板100之间的非平坦层500，且所述非平坦层500与所述第一电极200对应部分的远离所述衬底基板100一侧的表面非平坦。
例如，位于所述OLED发光器件10出光侧的第一电极200和/或第二电极400包括金属层。
需要说明的是，不对所述非平坦层500的材料以及结构进行限定，只要能使其与所述第一电极200对应部分的远离衬底基板100一侧的表面非平坦即可。
当所述非平坦层500中包括导电材料时，需在该非平坦层500和第一电极200之间设置绝缘层。
需要说明的是，由于所述非平坦层500位于所述第一电极200的下方，即：位于下方的非平坦层500需先制备形成，位于上方的第一电极200后制备形成，因此，在非平坦层500与所述第一电极200对应部分的远离所述衬 底基板100一侧的表面非平坦的情况下，在其上方形成的第一电极200也随着非平坦层500的上表面的变化而变化，同理位于所述第一电极200上方的有机材料功能层300和第二电极400也随着变化，这样就使得所述第一电极200、所述有机材料功能层300和第二电极400具有非平坦的表面。
需要说明的是，第一电极200可以为阴极或阳极，第二电极400可以为阳极或阴极。即：若第一电极200为阴极，则第二电极400为阳极；若第一电极200为阳极，则第二电极400为阴极。
对于所述有机材料功能层300，其可以至少包括发光层，在此基础上为了能够提高电子和空穴注入发光层的效率，所述有机材料功能层300进一步还可以包括电子传输层、空穴传输层和设置在阴极与所述电子传输层之间的电子注入层，以及设置在所述空穴传输层与阳极之间的空穴注入层等功能层。
基于此，当向阳极和阴极施加工作电压时，阳极中的空穴和阴极中的电子均注入到所述发光层中；空穴和电子在所述发光层中相遇，二者复合在一起形成电子-空穴对、并释放出能量；该能量以光的形式发出，并从所述有机材料功能层300的两侧均匀的射出。
例如，所述发光层发出的光可以为红光、绿光、蓝光；当然，所述发光层发出的光也可以为白光，在此不做限定。
基于此，所述OLED发光器件10例如可以为顶发光型，例如：所述第二电极400包括透明或半透明(即厚度相对较薄)的金属层，所述第一电极200包括不透明(即厚度相对较厚)的金属层。或者，所述OLED发光器件10也可以为底发光型，例如：所述第一电极200包括透明或半透明(即厚度相对较薄)的金属层，所述第二电极400包括不透明(即厚度相对较厚)的金属层。当然，所述OLED发光器件10也可以为双面发光型，例如：所述第二电极400和所述第一电极200均包括透明或半透明(即厚度相对较薄)的金属层。
例如，不透明导电材料例如可以为厚度相对较厚的银(Ag)，半透明导电材料例如可以为厚度相对较薄的银。
本发明实施例提供了一种OLED发光器件10，包括：衬底基板100，依次设置在所述衬底基板上第一电极200、有机材料功能层300、以及第二电极400；进一步所述OLED器件10还包括：设置在所述第一电极200和所述衬 底基板100之间的非平坦层500，且所述非平坦层500与所述第一电极200对应部分且远离所述衬底基板100一侧的表面非平坦。其中，位于所述OLED发光器件出光侧的第一电极200和/或第二电极400包括金属层。
由于非平坦层500与所述第一电极200对应部分的远离所述衬底基板100一侧的表面非平坦，使得在其上制备的第一电极200和第二电极400均为非平坦的电极层，这样当从有机材料功能层300出射的光入射到可透过的金属材料的第一电极200和/或第二电极400时，可以减少由于光形成金属表面等离子体电磁波而导致的损耗，提高光的输出效率。
例如，所述第一电极200包括具有反射性的不透明的金属层，所述第二电极400包括具有半透半反性的半透明金属层。由于不透明的第一电极200、有机材料功能层300、半透明的第二电极400可以构成一个微腔，因此，可以利用光在微腔内的干涉效应(微腔效应)来进一步提高光的输出效率。
由于多晶硅的表面粗糙度相对较大，因此，例如，所述非平坦层500与所述第一电极200对应部分包括多晶硅。其中，所述多晶硅可以是对非晶硅进行晶化处理得到的。
这样，可以通过仅对与所述第一电极200对应部分的非晶硅薄膜进行晶化处理得到多晶硅而使该部分具有相对较大的粗糙度，其余部分由于没有进行晶化处理，可以保持非晶硅薄膜原有的平坦性。
例如，如图2所示，所述非平坦层500为掺杂有微小颗粒500b的光刻胶层500a。
所述光刻胶层500a与所述第一电极200对应部分的远离所述衬底基板100一侧的表面露出所述微小颗粒500b。
这样，只要通过选择适当刻蚀选择比的光刻胶材料和作为微小颗粒的材料，便可以在与所述第一电极200对应的区域，很方便的通过刻蚀掉一部分光刻胶材料，微小颗粒500b由于不被刻蚀而暴露出来，形成非平坦的表面。
此外，由于每个微小颗粒500b具有不规则的形状，即使所有微小颗粒500b紧密排列，在所述光刻胶层500a远离所述衬底基板100的表面仍然会由于微小颗粒500b的不规则形状而变的非平坦。
这里，在形成所述光刻胶层500a时，可以将与所述第一电极200对应的区域与光刻胶半保留部分对应，其余部分与光刻胶完全保留部分对应，然后 在显影后，使光刻胶半保留部分的所述微小颗粒500b露出，从而在该区域形成非平坦的表面。
进一步的，为了保证所述光刻胶层500a的表面具有很好的非平坦效果，例如使所述光刻胶层500a的表面为褶皱形，所述微小颗粒500b之间的间隙则不能太大，这就需要所述微小颗粒500b的掺杂浓度不能太低且粒径不能太大，因此，本发明实施例中例如所述微小颗粒500b的掺杂浓度在80％～100％之间，所述微小颗粒的粒径在10nm范围内。
在此基础上，还可以将微小颗粒500b的粒径设置为大小不同来进一步减小颗粒之间的间隙。
例如，所述微小颗粒500b包括：微小的陶瓷颗粒、或微小的金属颗粒。
这里，通过适当选择微小颗粒500b的材料，便可以使上述微小颗粒和光刻胶的化学性质不同，这样在将位于第一电极200下方的掺杂有微小颗粒500b的光刻胶薄膜中的光刻胶去除掉一部分时，便不会对位于其中的微小颗粒500b产生影响。
例如，如图3所示，在所述微小颗粒500b包括微小的金属颗粒的情况下，所述OLED发光器件10还包括设置在所述光刻胶层500a和所述第一电极200之间的绝缘层600，以使所述光刻胶层500a中的导电的金属颗粒与所述第一电极200绝缘。
例如，所述绝缘层600的材料可以为二氧化硅、氮化硅等。
本发明实施例还提供了一种显示装置，包括上述的OLED发光器件10。
此处，所述OLED发光器件10可以适用无源矩阵型显示装置，也可以适用有源矩阵显示装置，在此不做限定。
本发明实施例提供了一种显示装置，包括上述的OLED发光器件10。由于非平坦层500与所述第一电极200对应部分的远离所述衬底基板100一侧的表面非平坦，使得在其上制备的第一电极200和第二电极400均为非平坦的电极层，这样当从有机材料功能层300出射的光入射到可透过的金属材料的第一电极200和/或第二电极400时，可以减少由于光形成金属表面等离子体电磁波而导致的损耗，提高光的输出效率。
考虑到无源矩阵应用于大尺寸显示装置时有其不足的一面，优选的，本发明实施例提供的显示装置为有源矩阵型显示装置，即，如图4所示，所述 显示装置还包括设置在衬底基板100和所述OLED发光器件10的非平坦层500之间的薄膜晶体管700。
其中，所述薄膜晶体管700包括栅极、栅绝缘层、半导体有源层、源极和漏极；所述薄膜晶体管700可以是顶栅型，也可以是底栅型。
进一步的，考虑到若使漏极与所述第二电极400电连接，势必需要所述第二电极400穿过位于有机材料功能层300和第一电极200，来与漏极电连接，这样一方面可能导致第二电极400与第一电极200发生短路，另一方面由于有机材料功能层300材料的特殊性，制备工艺相对也复杂。基于此，本发明实施例优选为，将所述薄膜晶体管700的漏极与所述第一电极200电连接。
这里，若将第一电极200作为阳极，则作为阴极的第二电极400的电压为恒定；若将第一电极200作为阴极，则作为阳极的第二电极400的电压为恒定。
当然，如图4所示，对于所述OLED显示装置，还应包括设置在所述第二电极400上方的封装基板800。
进一步的，考虑到所述第一电极200需要通过设置在所述非平坦层500上的过孔与所述薄膜晶体管700的漏极电连接，因此，在所述非平坦层500为掺杂有微小颗粒500b的光刻胶层500a的情况下，所述微小颗粒500b的掺杂浓度不能太高，否则不容易在光刻胶层500a上形成过孔。基于此，本发明实施例优选为，所述微小颗粒500b的掺杂浓度在80％～90％之间。
例如，参考图4所示，在所述薄膜晶体管700和所述非平坦层500之间还设置有平坦层900，这样在后续形成所述非平坦层500、第一电极200等时，便可避免由于下方的薄膜晶体管700具有高度差而导致断线等现象。
本发明实施例还提供了一种OLED发光器件的制备方法，该方法包括：在衬底基板100上依次形成第一电极200、有机材料功能层300、以及第二电极400；进一步所述方法还包括：在所述第一电极200和所述衬底基板100之间形成非平坦层500，且所述非平坦层500与所述第一电极200对应部分的远离所述衬底基板100一侧的表面非平坦。
例如，位于所述OLED发光器件10出光侧的第一电极200和/或第二电极400包括金属层。
需要说明的是，由于所述非平坦层500位于所述第一电极200的下方，即：位于下方的非平坦层500需先制备形成，位于上方的第一电极200后制备形成，因此，在非平坦层500与所述第一电极200对应部分的远离所述衬底基板100一侧的表面非平坦的情况下，在其上方形成第一电极200也随着非平坦层500的上表面的变化而变化，同理位于所述第一电极200上方的有机材料功能层300和第二电极400也随着变化，这样就使得所述第一电极200、有机材料功能层300和第二电极400具有非平坦的表面。
本发明实施例提供了一种OLED发光器件的制备方法，由于非平坦层500与所述第一电极200对应部分的远离所述衬底基板100一侧的表面非平坦，使得在其上制备的第一电极200和第二电极400均为非平坦的电极层，这样当从有机材料功能层300出射的光入射到可透过的金属材料的第一电极200和/或第二电极400时，可以减少由于光形成金属表面等离子体电磁波而导致的损耗，提高光的输出效率。
例如，所述第一电极200包括具有反射性的不透明的金属层，所述第二电极400包括具有半反半透性的半透明金属层。由于不透明的第一电极200、有机材料功能层300、半透明的第二电极400可以构成一个微腔，因此，可以利用光在微腔内的干涉效应(微腔效应)来进一步提高光的输出效率。
例如，参考图1所示，所述非平坦层500与所述第一电极200对应部分包括多晶硅。在此情况下，形成所述非平坦层500包括：
在所述衬底基板100上例如采用等离子增强化学气相沉积法(Plasma Enhanced Chemical Vapor Deposition，简称PECVD)沉积形成非晶硅薄膜；
对所述非晶硅薄膜与所述第一电极200对应的区域进行晶化处理，使非晶硅转换为多晶硅，形成所述非平坦层500。
例如，晶化处理可以包括：激光退火工艺(ELA)、金属诱导结晶工艺(MIC)、固相结晶工艺(SPC)等结晶化手段。
此外，在晶化处理前，还可以采用高温烤箱对非晶硅薄膜进行脱氢工艺处理，以防止在晶化过程中出现氢爆现象以及降低晶化后薄膜内部的缺陷态密度。
例如，参考图2所示，所述非平坦层500为掺杂有微小颗粒500b的光刻胶层500a；其中，所述光刻胶层500a与所述第一电极200对应部分的远离 所述衬底基板100一侧的表面露出所述微小颗粒500b。在此情况下，形成所述光刻胶层500a包括：
S101、如图5所示，在所述衬底基板100上形成掺杂有微小颗粒500b的光刻胶薄膜5001。
S102、如图6所示，采用半阶或灰阶掩模板20对形成有所述光刻胶薄膜5001的基板进行曝光、显影后，形成光刻胶半保留部分5001a和光刻胶完全保留部分5001b；其中，所述光刻胶半保留部分5001a与所述第一电极200的区域对应，且所述光刻胶半保留部分5001a的表面露出掺杂在其中的所述微小颗粒500b，所述光刻胶完全保留部分5001b与其余区域对应，形成所述光刻胶层500a。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。
本申请要求于2014年5月8日递交的第201410191777.0号中国专利申请的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (13)

  1. 一种OLED发光器件，包括：衬底基板，依次设置在所述衬底基板上的第一电极、有机材料功能层、以及第二电极；其中，
    所述OLED器件还包括：设置在所述第一电极和所述衬底基板之间的非平坦层，且所述非平坦层与所述第一电极对应部分的远离所述衬底基板一侧的表面非平坦；并且
    位于所述OLED发光器件出光侧的第一电极和/或第二电极包括金属层。
  2. 根据权利要求1所述的OLED发光器件，其中所述非平坦层为掺杂有微小颗粒的光刻胶层；
    其中，所述光刻胶层与所述第一电极对应部分的远离所述衬底基板一侧的表面露出所述微小颗粒。
  3. 根据权利要求2所述的OLED发光器件，其中所述微小颗粒的粒径小于10nm。
  4. 根据权利要求2所述的OLED发光器件，其中所述微小颗粒包括：微小的陶瓷颗粒、或微小的金属颗粒；
    在所述微小颗粒包括微小的金属颗粒的情况下，所述OLED发光器件还包括设置在所述光刻胶层和所述第一电极之间的绝缘层。
  5. 根据权利要求1所述的OLED发光器件，其中所述非平坦层与所述第一电极对应部分包括多晶硅；
    其中，所述多晶硅是对非晶硅进行晶化处理得到的。
  6. 根据权利要求1至5任一项所述的OLED发光器件，其中所述第一电极包括不透明的金属层，所述第二电极包括半透明金属层。
  7. 一种显示装置，包括权利要求1至6任一项所述的OLED发光器件。
  8. 根据权利要求7所述的显示装置，其中还包括设置在衬底基板和所述OLED发光器件的非平坦层之间的薄膜晶体管；
    其中，所述薄膜晶体管的漏极与所述OLED发光器件的第一电极电连接。
  9. 根据权利要求8所述的显示装置，其中所述非平坦层为掺杂有微小颗粒的光刻胶层，所述微小颗粒的掺杂浓度在80％～90％之间。
  10. 一种OLED发光器件的制备方法，包括：在衬底基板上依次形成第 一电极、有机材料功能层、以及第二电极；其中
    所述方法还包括：在所述第一电极和所述衬底基板之间形成非平坦层，且所述非平坦层与所述第一电极对应部分的远离所述衬底基板一侧的表面非平坦；
    其中，位于所述OLED发光器件出光侧的第一电极和/或第二电极包括金属层。
  11. 根据权利要求10所述的方法，其中所述非平坦层为掺杂有微小颗粒的光刻胶层；其中，所述光刻胶层与所述第一电极对应部分的远离所述衬底基板一侧的表面露出所述微小颗粒；
    形成所述光刻胶层包括：
    在所述衬底基板上形成掺杂有微小颗粒的光刻胶薄膜；
    采用半阶或灰阶掩模板对形成有所述光刻胶薄膜的基板进行曝光、显影后，形成光刻胶半保留部分和光刻胶完全保留部分；其中，所述光刻胶半保留部分与所述第一电极的区域对应，且所述光刻胶半保留部分的表面露出掺杂在其中的所述微小颗粒，所述光刻胶完全保留部分与其余区域对应。
  12. 根据权利要求10所述的方法，其中所述非平坦层与所述第一电极对应部分包括多晶硅；
    所述形成所述非平坦层包括：
    在所述衬底基板上形成非晶硅薄膜；
    对所述非晶硅薄膜与所述第一电极对应的区域进行晶化处理，使非晶硅转换为多晶硅，形成所述非平坦层。
  13. 根据权利要求10至12任一项所述的方法，其中所述第一电极包括不透明的金属层，所述第二电极包括半透明金属层。
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