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WO2015140522A1 - Structure d'un dispositif photovoltaïque - Google Patents

Structure d'un dispositif photovoltaïque Download PDF

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Publication number
WO2015140522A1
WO2015140522A1 PCT/GB2015/050757 GB2015050757W WO2015140522A1 WO 2015140522 A1 WO2015140522 A1 WO 2015140522A1 GB 2015050757 W GB2015050757 W GB 2015050757W WO 2015140522 A1 WO2015140522 A1 WO 2015140522A1
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WIPO (PCT)
Prior art keywords
refractive index
layer
photovoltaic device
particles
photoactive
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PCT/GB2015/050757
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English (en)
Inventor
Terence Alan Reid
Henry James Snaith
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Oxford Photovoltaics Ltd
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Oxford Photovoltaics Ltd
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Publication of WO2015140522A1 publication Critical patent/WO2015140522A1/fr
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/87—Light-trapping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a photovoltaic device that comprises a plurality of optically transmissive layers.
  • the present invention is concerned with structures which affect the optical properties of such a photovoltaic device.
  • a photovoltaic device that comprises a plurality of optically transmissive layers permits light to transmit through the device. This means that the photovoltaic device is at least partially transparent, allowing its use in a wide range of applications that are not practical for a photovoltaic device that is opaque, notably including inclusion in a window pane.
  • the aesthetic appearance of such a device is important.
  • the aesthetic appearance of many existing types of transparent optoelectronic device is adversely affected by the scattering of light from the interfaces between the layers, which give the optoelectronic device a hazy appearance.
  • it is desirable to reduce the scattering although in some applications a controlled degree of scattering may be preferred for the provision of privacy.
  • a photovoltaic device comprising a base layer; a first conductive layer disposed on the base layer; a photoactive section disposed on the first conductive layer, the photoactive section comprising one or more layers; and a second conductive layer disposed on the photoactive section.
  • the layers of the device are optically transmissive and at least one of the layers of the device is optically modified by having a refractive index modifying material distributed therein that modifies the refractive index of the layer at wavelengths of visible light.
  • the present invention modifies at least one of the layers of the photovoltaic device.
  • an optically modified layer of the device has refractive index modifying material distributed therein.
  • the refractive index modifying material modifies the refractive index of the optically modified layer at wavelengths of visible light.
  • the refractive index modifying material may be used to modify the optical properties of the photovoltaic device as a whole.
  • the modification of refractive index may be selected having regard to the refractive index of an adjacent layer that has an interface with the optically modified layer to control the degree of scattering at that interface.
  • the refractive index of the optically modified layer may be modified to be closer to the refractive index of the adjacent layer that has that interface with the optically modified layer than if the refractive index modifying material was absent.
  • the degree of scattering is reduced.
  • An optimum reduction in scattering can be achieved by modifying the refractive index of the optically modified layer to be the same as the refractive index of the adjacent layer. This reduction in scattering is a particular advantage when the interface has a relatively high degree of roughness, since such roughness tends to increase the scattering.
  • optically modifying an existing layer without the need to provide an additional layer.
  • the optically modifying material does not need to play a role in the electrical function of the photovoltaic device.
  • a single optically modified layer may be provided, but in other examples plural optically modified layers may be provided. In either case, the refractive index of an optically modified layer is modified to control the optical properties as described above.
  • each of the plurality of optically modified layers will have a refractive index modifying material distributed therein.
  • the device can comprise a single refractive index modifying material with this refractive index modifying material being distributed within each of the plurality of optically modified layers of the device.
  • each of the plurality of optically modified layers can comprise the same refractive index modifying material distributed therein.
  • the device can comprise a plurality of refractive index modifying materials with each of the plurality of refractive index modifying materials being distributed in one or more of the plurality of optically modified layers of the device.
  • each of the plurality of optically modified layers can be optically modified by having a different refractive index modifying material distributed therein.
  • each of the plurality of optically modified layers can comprise a different refractive index modifying material distributed therein.
  • a subset comprising two or more of the plurality of optically modified layers can each have the same refractive index modifying material distributed therein, whilst the remaining optically modified layers have an alternative refractive index modifying material distributed therein.
  • it is at least one of the layers of the photoactive section of the device that is optically modified.
  • it is preferably that it is one or more of the layers of the photoactive section of the device that are optically modified.
  • a refractive index modifying material may take a variety of forms that allow it to be distributed through the optically modified layer.
  • a refractive index modifying material i.e. that is distributed within one or more optically modified layers of a photovoltaic device
  • Particles have the advantage of being easy to distribute in the optically modified layer during manufacture.
  • the particles may simply be dispersed within the other material of the optically modified layer when is formed.
  • the refractive index modifying particles may all be of the same type (e.g. in material and/or size), or may of a mix of types (e.g. different materials and/or size).
  • an optically modified layer may comprise a continuous phase of material within which the particles are dispersed.
  • the material of the refractive index modifying particles distributed therein may have a refractive index that is different from the refractive index of the material of the continuous phase, so that the particles modify the overall refractive index of the layer.
  • an optically modified layer may comprise assembled particles within which refractive index modifying particles are dispersed.
  • the material of the refractive index modifying particles may have a refractive index that is different from the refractive index of the material of the assembled particles, so that the refractive index modifying particles modify the overall refractive index of the layer.
  • an optically modified layer comprises assembled particles
  • the refractive index modifying particles distributed therein may have an average dimension that is smaller than the average dimension of the assembled particles.
  • assembled particles may have a greater influence than the refractive index modifying particles on the physical structure of the optically modified layer, particularly as the relative size of the refractive index modifying particles is reduced.
  • the optically modified layer may have a similar structure to a known device, without disruption from the refractive index modifying particles. This simplifies the selection of the refractive index modifying particles because the physical structure is primarily dependent on the assembled particles.
  • the assembled particles may be selected to provide the desired physical structure, for example in a similar manner to the equivalent layer in a known optoelectronic device.
  • the refractive index modifying particles may have an average dimension that is similar to the average dimension of the assembled particles, for example within 20% of the average dimension of the assembled particles. In that case both the assembled particles and the refractive index modifying particles have a similar influence on the physical structure of the optically modified layer. Thus the assembled particles and the refractive index modifying particles are selected together to provide the desired physical structure.
  • the material and configuration of the refractive index modifying particles are selected so that they modify the refractive index of the optically modified layer at wavelengths of visible light.
  • the refractive index modifying particles may have an average dimension of less than 200nm. This ensures that the refractive index modifying particles have a size that is smaller than the minimum wavelength of visible light, for example 380nm, visible light typically being taken to be in the range from 380nm to 780nm. In this manner, the refractive index modifying particles may have the effect of modifying refractive index, rather than scattering light themselves.
  • the refractive index modifying particles may have an average dimension of less than lOnm, for example in the range from 4nm to 6nm.
  • a refractive index modifying material i.e. that is distributed within one or more optically modified layers of a photovoltaic device
  • the optically modified layer comprises structured material that is structured to provide surfaces extending within the layer.
  • the refractive index modifying material distributed therein may comprise a coating of refractive index modifying material on the surfaces of the structured material.
  • the material of the refractive index modifying material may have a refractive index that is different from the refractive index of the structured material, so that the particles modify the overall refractive index of the layer.
  • such structured material may be porous material.
  • the surfaces on which the refractive index modifying material is coated may be surfaces of the porous material that define pores.
  • such structured material may comprise assembled particles.
  • the surfaces on which the refractive index modifying material is coated may be the outer surfaces of the assembled particles.
  • Such a coating of refractive index modifying material may take a variety of forms. Some examples are as follows.
  • the coating may be a complete coating that covers the coated surfaces
  • the coating may be a continuous medium or may be a particulate coating that comprises discrete particles that coat the surfaces.
  • the material and configuration of the coating are selected so that it modifies the refractive index of the optically modified layer at wavelengths of visible light.
  • the present invention may be applied to a wide range within a photovoltaic device. Some advantageous examples are as follows.
  • an optically modified layer may comprise a non-porous layer of semiconductor material, for example a layer of semiconductor material that is formed adjacent a conductive layer or a porous layer of semiconductor material in some types of optoelectronic device.
  • an optically modified layer may comprise a layer of photoactive material which may be supported by a porous material.
  • the photoactive material may be a photoactive perovskite or another type of photoactive material.
  • the porous material is selected as appropriate for the type of photoactive material. Examples of such a porous material include porous material that is electrically insulating or porous material that is semiconductor material.
  • the refractive index modifying material distributed therein may comprise a coating of refractive index modifying material on the surfaces of the porous material as described in more detail above which applies equally here.
  • an optically modified layer comprises a layer of porous material and photoactive material supported by the porous material
  • the refractive index modifying material is a coating of semiconductor material on the porous material beneath the photoactive material, that has a refractive index that is different from the refractive index of the porous material
  • the coating may have an average thickness that is sufficiently large to prevent the flow of current between the porous material and the photoactive material.
  • a refractive index modifying material may in general be any type of material that provides the desired refractive index modification, and is selected having regard to its optical properties.
  • the role of a refractive index modifying material is to alter the optical properties of any of the electrically functional layers of the device, without adding an additional layer, and therefore it is not a requirement that the material contributes to the electrical functionality of the device.
  • a refractive index modifying material may also modify the electrical properties of the optically modified layer and so a refractive index modifying material is also selected having regard to its electrical properties, on the basis of the electrical function of the optically modified layer. It is not expected that a refractive index modifying material will improve the electrical performance of the device but preferably it will not decrease the performance.
  • refractive index modifying materials are as follows. These examples may be used in any of the embodiments disclosed herein.
  • a refractive index modifying material may be an electrically insulating material, for example MgF 2 , Si0 2 , MgO, NaF, LiF, or AI2O3.
  • a refractive index modifying material may be a semiconductor material, for example Sn0 2 , T1O2, ZnO, W03, ZnS, CdS, SiC.
  • a method of manufacturing a photovoltaic device comprising a base layer, a first conductive layer disposed on the base layer, a photoactive section disposed on the first conductive layer, the photoactive section comprising one or more layers, and a second conductive layer disposed on the photoactive section, wherein the layers of the device are optically transmissive.
  • the method comprises forming at least one of the layers of the device with a refractive index modifying material distributed therein, the refractive index modifying material being selected to modify the refractive index of the at least one layer at wavelengths of visible light.
  • an optoelectronic device comprising a plurality of optically transmissive layers, including at least one optically modified layer having distributed therein refractive index modifying material that modifies the refractive index of the optically modified layer at wavelengths of visible light.
  • an optoelectronic device comprising a plurality of optically transmissive layers, the method comprising forming at least one optically modified layer having distributed therein refractive index modifying material that is selected to modify the refractive index of the optically modified layer at wavelengths of visible light.
  • Fig. 1 is a schematic cross-sectional view of a photovoltaic device
  • Figs. 2 and 3 are schematic cross-sectional views of part of the first semiconductor layer in the photovoltaic device of Fig. 1 in two alternative forms;
  • Fig. 4 is a schematic cross-sectional view of part of the first semiconductor layer in a modification of the photovoltaic device of Fig. 1;
  • Fig. 5 is a schematic cut-away perspective view of a possible form of particle in the first semiconductor layer of Fig. 4;
  • Figs. 5A and 5B are a schematic cross-sectional views of the photovoltaic device in two modified forms
  • Fig. 6 is a schematic cross-sectional view of a photovoltaic device with a modified construction
  • Figs. 7 and 8 are schematic cross-sectional views of part of the photoactive layer in the photovoltaic device of Fig. 6 in two alternative forms;
  • Figs. 9 and 10 are schematic cross-sectional views of part of the photoactive layer in respective modifications of the photovoltaic device of Fig. 6;
  • Fig. 11 is a schematic cut-away perspective view of a possible form of particle in the photoactive layer of Figs. 9 and 10;
  • Fig. 11 A is a schematic cross-sectional view of the photovoltaic device in a modified form
  • Figs. 1 IB and 11C are schematic cross-sectional views of part of the photoactive layer in the photovoltaic device of Fig. 11 A in two alternative forms;
  • Figs. 1 ID and 1 IE are schematic cross-sectional views of part of the photoactive layer in respective modifications of the photovoltaic device of Fig. 11 A;
  • Figs. 12 to 14 are schematic cross-sectional views of a photovoltaic device with another modified construction.
  • Figs. 15 and 16 are a schematic cross-sectional views of the photovoltaic device in two modified forms.
  • a photovoltaic device 1 is shown in Fig. 1.
  • the overall construction and function is as follows and is shared with all the subsequent embodiments.
  • the photovoltaic device 1 has a layered construction, in particular comprising a plurality of layers 11 to 16 described in detail below. Each of those layers is optically transmissive, that is transmits light. In each of the layers 11 to 16, such transmission of light may occur to any degree, and may be accompanied by some degree of absorption. Thus, overall the photovoltaic device 1 may be partially or completely transparent.
  • Fig. 1 and the various other drawings showing cross-sectional views of a photovoltaic device 1 for the sake of clarity, the relative thickness of the various layers 11 to 16 is not drawn to scale.
  • the layers may in fact have thicknesses that are typical for devices employing the type of photoactive layer 14 described below.
  • the photovoltaic device 1 comprises a base layer 11 which acts as a support for the other layers.
  • the base layer 11 may be made of any suitable material, for example glass.
  • a first conductive layer 12 is deposited on the base layer 11.
  • the first conductive layer 12 may be made of any suitable conductive material, for example a conductive oxide such as doped tin dioxide (Sn0 2 ), a metal, or a conducting polymer.
  • the first conductive layer 12 may be made of fluorine-doped tin oxide (FTO), Sn0 2 :F.
  • FTO fluorine-doped tin oxide
  • the first conductive layer 12 may typically have a thickness in the range 50-500nm or of that order.
  • a photoactive section 20 comprising three layers 13 to 15 is formed on the first conductive layer 12.
  • the photoactive section 20 converts light into electrical current.
  • the photoactive section 20 comprises a first semiconductor layer 13 formed on the first conductive layer 12.
  • the first semiconductor layer 13 is a layer of semiconductor material, which is generally non-porous, although this is not essential. Historically, this layer has sometimes been referred to as a "compact" layer.
  • the first semiconductor layer 13 comprises n-type material, for example titanium dioxide, and acts as a hole blocking layer.
  • the first semiconductor layer 13 may typically be of thickness of around lOOnm or of that order.
  • the first semiconductor layer 13 may comprise a continuous phase of material.
  • the first semiconductor layer 13 may comprise assembled particles.
  • the first semiconductor layer 13 may be formed from separate particles that are assembled by being brought together into the first semiconductor layer 13.
  • the first semiconductor layer 13 being structured material that provides surfaces, i.e. the surfaces of the assembled particles, extending therewithin.
  • n-type material refers to an electron-transporting semiconductor material. Any suitable electron-transporting material may be employed. Typically, the n-type material may comprise a metal oxide, for example titanium dioxide (Ti0 2 ), Zinc Oxide (ZnO), or tin dioxide (Sn0 2 ).
  • Ti0 2 titanium dioxide
  • ZnO Zinc Oxide
  • Sn0 2 tin dioxide
  • a photoactive layer 14 is formed on the first semiconductor layer 13.
  • the photoactive layer 14 may comprise a layer of porous material 25 having pores 21 formed therein. This provides open structure having a relatively large surface area.
  • the porous material 25 is shown schematically in Fig. 1 as separated particles 22, but in fact the porous material 25 is continuous so as to provide electrical paths through the photoactive layer 14 to the first semiconductor layer 13.
  • the photoactive layer 14 may typically have a thickness in the range 0.5-2 ⁇ or of that order. This is an example of the photoactive layer 14 being structured material that provides surfaces, i.e. the surfaces of the pores 21, extending therewithin.
  • the layer of porous material 25 may take various forms made by different techniques.
  • the layer of porous material 25 may comprise assembled particles 22.
  • the layer of porous material 25 may be formed from separate particles that are assembled by being brought together and fused into the layer of porous material 25.
  • the surfaces of the assembled particles 22 that are not fused together therefore form the surfaces of the pores 21.
  • the photoactive layer 14 comprising structured material that provides surfaces extending therewithin, being the surfaces of the assembled particles 22 and/or the surfaces of the pores 21.
  • the layer of porous material 25 that provide the porous, open structure including pores 21 are known and may be applied here. Some examples of other forms for the layer of porous material 25 may not comprise assembled particles 22.
  • the photoactive layer 14 is still an example of the photoactive layer 14 comprising structured material that provides surfaces extending therewithin, being the surfaces of the pores 21.
  • the layer of porous material 25 has the purpose of acting as a scaffold that supports the photoactive material 23.
  • the photoactive material 23 is formed as a layer on the surfaces of the porous material 25 that define the pores 21.
  • the layer of porous material 25 may be formed of any suitable material that can provide the open physical structure, as well as appropriate electrical properties.
  • the porous material may be any material that is electron transport needs to be provided.
  • the porous material 25 may be the same as the material of the first semiconductor layer 13, although different materials could in principle be used.
  • the porous material 25 may be electrically insulating.
  • the photoactive material 23 may comprise a photoactive perovskite.
  • a perovskite may generally be one which is capable of absorbing EM radiation, and thereby generating free charge carriers.
  • the perovskite may be a light-absorbing perovskite.
  • Suitable perovskites include organometal perovskites, and particularly organometal halide perovskites, such as those described in WO-2013/171517, WO-2013/171518 and WO-2013/171520.
  • photoactive material 23 may comprise a semiconductor other than a perovskite, such as: a copper zinc tin sulphide such as Cu 2 ZnSnS4 (CZTS); a copper zinc tin sulphur-selenide such as Cu2ZnSn(Si- x Se x )4 (CZTSSe); a copper indium gallium selenide such as CuIni- x Ga x Se2 (CIGS); an antimony or bismuth chalcogenide, such as, for example, Sb 2 S 3 , Sb 2 Se3, Bi 2 S 3 or Bi 2 Se 3 ; a dye-sensitised metal oxide such as dye- sensitised Ti0 2 ; or an organic photosensitizing dye, such as for instance an indolene dye.
  • a semiconductor other than a perovskite such as: a copper zinc tin sulphide such as Cu 2 ZnSnS4 (CZTS); a copper zinc tin
  • the pores 21 of the photoactive layer 14 contain semiconductor material which is of the opposite type to the first semiconductor layer, being p-type material in this example.
  • p-type material refers to a hole-transporting
  • Suitable p-type materials may be selected from organic or inorganic materials such as polymeric or molecular hole transporters or semiconducting metal oxides or halides.
  • the p-type layer may for instance comprise spiro-OMeTAD (2,2',7,7'-tetrakis-(N,N-di-p-methoxyphenylamine)9,9'-spirobifluorene)).
  • the p-type layer may for instance comprise CuSCN.
  • a second semiconductor layer 15 is formed on the photoactive layer 14.
  • the second semiconductor layer 15 is a non-porous layer of semiconductor material.
  • the second semiconductor layer 15 comprises p- type material.
  • the second semiconductor layer 15 may comprise a continuous phase of material.
  • the material of the second semiconductor layer 15 may be the same as the material contained in the pores 21 of the photoactive layer 14. In practical constructions, the two materials may typically be continuous and formed together during manufacture, although different materials could in principle be used.
  • the photoactive material 23 is disposed between: an n-type region of n-type material formed by the first semiconductor layer 13 and the layer of porous material 25 of the photoactive layer 14; and a p-type region of p-type material formed by the second semiconductor layer 15 and material contained in the pores 21 of the photoactive layer 14.
  • a second conductive layer 16 is formed on the photoactive section 20.
  • the second conductive layer 16 may be made of any suitable conductive material, for example a conductive oxide such as doped tin dioxide (Sn0 2 ), a metal, or a conducting polymer.
  • the second conductive layer 16 may comprise silver.
  • the photovoltaic device 1 may optionally further comprise conductive grids (not shown) having a higher conductivity than the second conductive layer 16.
  • the photovoltaic device 1 may further comprise a protective layer (not shown) formed on top of the remainder of the photovoltaic device 1 for protection.
  • the protective layer may be formed of any suitable material for example glass or a polymer.
  • photovoltaic device 1 could be of any type, employing any type of photoactive material in a suitable construction that may include other materials appropriate to the utilise the photoactive material.
  • the interfaces between the various layers 11 to 16 are shown as being planar, but this is merely for clarity and in fact the interfaces between the various layers 11 to 16 may be uneven, depending on the materials used and the method of forming the layer.
  • the interface 33 between the first conductive layer 12 and the first semiconductor layer 13 is typically particularly uneven. This may be caused by the method of depositing the first conductive layer 12 leaving an uneven upper surface which becomes interface 34 when the first semiconductor layer 13 is deposited thereon.
  • the first semiconductor layer 13 may be conformal with the interface 33 (in which case the interface 33 between the first semiconductor layer 13 and the photoactive layer 14 will be similarly uneven) or may level the uneveness in the interface 33 (in which case the interface 33 between the first semiconductor layer 13 and the photoactive layer 14 will be less uneven).
  • any uneveness in the interface between those two adjacent layers may cause scattering of light at the interface, particularly if the size of features in the interface is larger than the wavelength of the light.
  • significant scattering of light may occur at the interface 33 between the first conductive layer 12 and the first semiconductor layer 13.
  • the first semiconductor layer 13 is optically modified as described below. This is therefore an example of an optically modified layer that comprises a layer of
  • the first semiconductor layer 13 has refractive index modifying particles 30 dispersed therein.
  • the refractive index modifying particles 30 therefore form a material that is distributed within the first semiconductor layer 13.
  • the refractive index modifying particles 30 are selected so that they modify the refractive index of the first semiconductor layer 13 at wavelengths of visible light.
  • the material of the refractive index modifying particles may have a refractive index that is different from the refractive index of the material of first semiconductor layer 13, for example the continuous phase or the assembled particles thereof.
  • the refractive index may be controlled by selection of the material, configuration, size and ratio of the refractive index modifying particles 30.
  • the refractive index modifying particles 30 may have sizes and materials as discussed above.
  • the optical modification may be selected to control the optical properties of the photovoltaic device 1.
  • One optical property that may be controlled is the degree of scattering at an interface between the optically modified layer and an adjacent layer, which is dependent on the refractive indices of the optically modified layer and an adjacent layer, as well as the shape of the surface, in particular the unevenness. Often the degree of scattering is reduced, but there may be situations where it is increased, for example if it is desirable to provide a photovoltaic device 1 with haze.
  • the refractive index modifying particles 30 may be selected so that the refractive index of the first semiconductor layer 13 is modified to be closer to the refractive index of first conductive layer 12 than if the refractive index modifying particles 30 were absent, preferably to have the same refractive index as the first conductive layer 12.
  • first conductive layer 12 is an adjacent layer that has an interface 33 with the first
  • the refractive index modifying particles 30 may be selected so that the refractive index of the first semiconductor layer 13 is modified to be closer to the refractive index of the photoactive layer 14 than if the refractive index modifying particles 30 were absent, preferably to have the same refractive index as the photoactive layer 14.
  • the photoactive layer 14 is an adjacent layer that has that interface 34 with the first semiconductor layer 13 reducing or eliminating the step in refractive index reduces the degree of, or eliminates, scattering at the interface 34.
  • the refractive index modifying particles 30 may also modify the electrical properties of the first semiconductor layer 13 and so are also selected having regard to their electrical properties. For example, in the case that the refractive index modifying particles 30 have significant conductivity, for example if they are made of zinc oxide, then they may enhance the electrical conductivity of the first semiconductor layer 13 as a whole. This may enhance the efficiency of the photovoltaic device 1 itself. This may also make it possible to increase the thickness of the first semiconductor layer 13 which otherwise kept as thin as possible due to its insulating properties.
  • the refractive index modifying particles 30 are straightforward to incorporate during manufacture.
  • the first semiconductor layer 13 is manufactured using essentially the same process as before, but the refractive index modifying particles 30 are dispersed within the material of the first semiconductor layer 13 prior to forming it. This is straightforward in the case that the first semiconductor layer 13 is a continuous phase of material, in which case the refractive index modifying particles 30 are simply mixed into that material. This is similarly straightforward in the case that the first semiconductor layer 13 comprises assembled particles, in which case the refractive index modifying particles 30 are simply mixed with those particles prior to assembly.
  • Fig. 2 illustrates an example of the case that the first semiconductor layer 13 comprises assembled particles 31 and the refractive index modifying particles 30 have an average dimension that is smaller than the average dimension of the assembled particles 31.
  • the physical structure of the first semiconductor layer 13 is influenced mostly by the assembled particles 31, particularly as the relative size of the refractive index modifying particles 30 is reduced, so it is straightforward to select refractive index modifying particles 30 without disrupting the structure.
  • Fig. 3 illustrates an example of the case that the first semiconductor layer 13 comprises assembled particles 31 and the refractive index modifying particles 30 have an average dimension that is similar to the average dimension of the assembled particles, for example within 20% of the average dimension of the assembled particles.
  • both the assembled particles 31 and the refractive index modifying particles 30 have a similar influence on the physical structure, and are therefore selected together to provide the desired physical structure.
  • Fig. 4 illustrates the first semiconductor layer 13 in a modification of the photovoltaic device 1 in which the first semiconductor layer 13 comprises assembled particles 35, and the refractive index modifying material is distributed in the form of a coating 36 on the outer surfaces of the assembled particles 35.
  • the coating 36 is selected so that it modifies the refractive index of the first semiconductor layer 13 at wavelengths of visible light.
  • the material of the coating 36 may have a refractive index that is different from the refractive index of the material of the assembled particles 35 of the first semiconductor layer 13.
  • the refractive index may be controlled by selection of the material, configuration, and thickness of the coating 36.
  • the coating 36 may have sizes and materials as discussed above.
  • the coating 36 is straightforward to incorporate during manufacture.
  • the first semiconductor layer 13 is manufactured using essentially the same process as before, but the coating 36 is applied to the particles 35 prior to assembly.
  • the coating 36 may be a complete coating that covers the surfaces of the particles
  • Fig. 5 illustrates an alternative in which the coating is a partial coating that covers the surfaces of the particles 35 discontinuously.
  • the coating 36 may be a continuous medium or may be a particulate coating that comprises discrete particles.
  • the refractive index modifying material could be a continuous phase of material contained in the pores of the first semiconductor layer 13.
  • the photovoltaic device 1 in a modified form is shown in Fig. 5A.
  • the photovoltaic device 1 in a modified form is shown in Fig. 5A.
  • the photovoltaic device 1 in a modified form is shown in Fig. 5A.
  • the photovoltaic device 1 in a modified form is shown in Fig. 5A.
  • the photoactive layer 14 differs as follows.
  • the photoactive layer 14 comprises a layer of porous material 25 having pores 21 formed therein as described above with reference to Fig. 1. However, instead of the photoactive material 23 being formed on the surfaces of the pores21, the photoactive material 23 fills the pores 21.
  • the photoactive material 23 extends at least to the level of the porous material 25 (uppermost in Fig. 5 A) and may extend above that level.
  • the photovoltaic device 1 in another modified form is shown in Fig. 5B.
  • the 11, 12, 13, 15 and 16 are arranged as described above with reference to Fig. 1.
  • the photoactive layer 14 differs in that it comprises a layer of photoactive material 23 without any supporting structure.
  • the photoactive material 23 may be a continuous phase of material.
  • the photoactive material 23 may comprise a photoactive perovskite.
  • Such a perovskite may generally be one which is capable of absorbing EM radiation, and thereby generating free charge carriers.
  • the perovskite may be a light-absorbing perovskite.
  • Suitable perovskites include organometal perovskites, and particularly organometal halide perovskites, such as those described in WO-2013/171517, WO-2013/171518 and WO-2013/171520.
  • the first semiconductor layer 13 comprises refractive index modifying material as described above with reference to any of Figs. 1 to 4.
  • Fig. 6 illustrates a modified construction of the photovoltaic device 1 that has the same overall construction as described above with reference to Fig. 1, but is an example in which the photoactive layer 14 is optically modified as described below.
  • This is therefore an example of an optically modified layer that comprises a layer of porous material 20 and photoactive material 23 supported by the porous material 25, and similarly an example of an optically modified layer that comprises structured material, as discussed above.
  • the photoactive layer 14 has refractive index modifying particles 40 distributed within the photoactive layer 14, for example by being coated on the layer of porous material 25, or, in the case that the porous material 25 comprises assembled particles 22, simply being mixed with the assembled particles 22, beneath the photoactive material 23.
  • the refractive index modifying particles 40 are selected so that they modify the refractive index of the photoactive layer 14 at wavelengths of visible light.
  • the material of the refractive index modifying particles may have a refractive index that is different from the refractive index of the material of photoactive layer 14, for example from the layer of porous material 25 and/or the semiconductor material contained in the pores 21.
  • the refractive index may be controlled by selection of the material, configuration, size and ratio of the refractive index modifying particles 40.
  • the refractive index modifying particles 40 may have sizes and materials as discussed above.
  • the refractive index modifying particles 40 may be selected so that the refractive index of the photoactive layer 14 is modified to be closer to the refractive index of the first semiconductor layer 13 than if the refractive index modifying particles 40 were absent, preferably to have the same refractive index as the first semiconductor layer 13. As the first semiconductor layer 13 is an adjacent layer that has an interface 34 with the photoactive layer 14, reducing or eliminating the step in refractive index reduces the degree of, or eliminates, scattering at the interface 34.
  • the refractive index modifying particles 40 may also modify the electrical properties of the photoactive layer 14 and so are also selected having regard to their electrical properties.
  • the refractive index modifying particles 40 are straightforward to incorporate during manufacture.
  • the refractive index modifying particles 40 may be simply mixed with those particles or may be pre-coated onto those particles prior to assembly.
  • the refractive index modifying particles 40 may be applied as a coating to the surfaces of the pores 21 after formation of the layer of porous material 25.
  • the photoactive material 23 is provided in the normal manner, and is therefore supported by the porous material 25.
  • the photoactive material 23 may be formed on the surfaces that define the pores 21, which may be surfaces of the assembled particles 22 or may be surfaces of the refractive index modifying particles 40.
  • Fig. 7 illustrates an example of the case that the photoactive layer 14 comprises assembled particles 22 and the refractive index modifying particles 40 have an average dimension that is smaller than the average dimension of the assembled particles 22.
  • the physical structure of the photoactive layer 14 is influenced mostly by the assembled particles 22, that is the open structure of the layer of porous material 25 is dependent mostly on the assembled particles 22.
  • refractive index modifying particles 40 without disrupting the structure.
  • the pores 21 are predominantly formed by the assembled particles 22 and the refractive index modifying particles 40 are often arranged inside the pores 21.
  • Fig. 8 illustrates an example of the case that the photoactive layer 14 comprises assembled particles 22 and the refractive index modifying particles 40 have an average dimension that is similar to the average dimension of the assembled particles 22, for example within 20% of the average dimension of the assembled particles.
  • both the assembled particles 22 and the refractive index modifying particles 40 have a similar influence on the physical structure, such that the open structure of the layer of porous material 25 is dependent on them both.
  • both the assembled particles 22 and the refractive index modifying particles 40 are selected together to provide the desired open structure.
  • the pores 21 are formed by both the assembled particles 22 and the refractive index modifying particles 40.
  • FIGs. 9 and 10 illustrate the photoactive layer 14 in modifications of the photovoltaic device 1 in which the photoactive layer 14 comprises assembled particles 45, and the refractive index modifying material is distributed in the form of a coating 46.
  • the assembled particles 45 are generally the same as the assembled particles 21 in the examples described above.
  • the coating 46 is applied to the outer surfaces of the assembled particles 45 before assembly of the particles 45 into the layer of porous material 25, and so may be present on the interfaces between assembled particles 45, as well as on the surfaces of the pores 21.
  • the coating 46 is applied to the outer surfaces of the assembled particles 45 after assembly of the particles 45 into the layer of porous material 25, and so is present on the surfaces of the pores 21, but not on the interfaces between assembled particles 45.
  • the photoactive material 23 is provided in the normal manner, and is therefore supported by the porous material 25, albeit that the coating 46 is beneath the photoactive material 23.
  • the photoactive material 23 may be formed on the surfaces that define the pores 21, which may be surfaces of the coating 46 on the assembled particles 22 or may be surfaces of the coating 46 on the refractive index modifying particles 40.
  • the coating 46 is selected so that it modifies the refractive index of the photoactive layer 14 at wavelengths of visible light.
  • the material of the coating 46 may have a refractive index that is different from the refractive index of the material of the assembled particles 45 of the photoactive layer 14.
  • the refractive index may be controlled by selection of the material, configuration, and thickness of the coating 46.
  • the coating 46 may have sizes and materials as discussed above.
  • the coating 46 is made of semiconductor material, it may have an average thickness that is sufficiently large to prevent the flow of current between the porous material and the photoactive material, in order to render it effectively insulating to prevent current flow to or from the photoactive material 23 penetrating to the coated particles 45.
  • the coating 46 may be a complete coating that covers the surfaces of the particles 45 continuously.
  • Fig. 11 illustrates an alternative in which the coating 46 is a partial coating that covers the surfaces of the particles 45 discontinuously.
  • the coating 46 may be a continuous medium or may be a particulate coating that comprises discrete particles.
  • Fig. 11 A illustrates a modified construction of the photovoltaic device 1 that has the same overall construction as described above with reference to Fig. 5A, but is an example in which the photoactive layer 14 is optically modified in the same manner as Fig. 6, as described above. This is therefore an example of an optically modified layer that comprises structured material, as discussed above.
  • the photoactive material 23 that fills the pores 21 may comprise a photoactive perovskite, as described above.
  • the photoactive layer 14 has refractive index modifying particles 40 distributed within the photoactive layer 14, for example by being coated on the layer of porous material 25, or, in the case that the porous material 25 comprises assembled particles 22, simply being mixed with the assembled particles 22, beneath the photoactive material 23.
  • the refractive index modifying particles 40 are selected so that they modify the refractive index of the photoactive layer 14 at wavelengths of visible light.
  • the material of the refractive index modifying particles may have a refractive index that is different from the refractive index of the material of photoactive layer 14, for example from the layer of porous material 25 and/or the photoactive material 23 contained in the pores 21.
  • the refractive index may be controlled by selection of the material, configuration, size and ratio of the refractive index modifying particles 40.
  • the refractive index modifying particles 40 may have sizes and materials as discussed above.
  • the refractive index modifying particles 40 may be selected so that the refractive index of the photoactive layer 14 is modified to be closer to the refractive index of the first semiconductor layer 13 than if the refractive index modifying particles 40 were absent, preferably to have the same refractive index as the first semiconductor layer 13. As the first semiconductor layer 13 is an adjacent layer that has an interface 34 with the photoactive layer 14, reducing or eliminating the step in refractive index reduces the degree of, or eliminates, scattering at the interface 34.
  • the refractive index modifying particles 40 may also modify the electrical properties of the photoactive layer 14 and so are also selected having regard to their electrical properties.
  • the refractive index modifying particles 40 are straightforward to incorporate during manufacture.
  • the refractive index modifying particles 40 may be simply mixed with those particles or may be pre-coated onto those particles prior to assembly.
  • the refractive index modifying particles 40 may be applied as a coating to the surfaces of the pores 21 after formation of the layer of porous material 25.
  • Fig. 1 IB illustrates an example of the case that the photoactive layer 14 of the photovoltaic device of Fig. 11 A comprises assembled particles 22 and the refractive index modifying particles 40 have an average dimension that is smaller than the average dimension of the assembled particles 22.
  • the physical structure of the photoactive layer 14 is influenced mostly by the assembled particles 22, that is the open structure of the layer of porous material 25 is dependent mostly on the assembled particles 22.
  • refractive index modifying particles 40 without disrupting the structure.
  • the pores 21 are predominantly formed by the assembled particles 22 and the refractive index modifying particles 40 are often arranged inside the pores 21.
  • Fig. l lC illustrates an example of the case that the photoactive layer 14 of the photovoltaic device of Fig. 11 A comprises assembled particles 22 and the refractive index modifying particles 40 have an average dimension that is similar to the average dimension of the assembled particles 22, for example within 20% of the average dimension of the assembled particles.
  • both the assembled particles 22 and the refractive index modifying particles 40 have a similar influence on the physical structure, such that the open structure of the layer of porous material 25 is dependent on them both.
  • both the assembled particles 22 and the refractive index modifying particles 40 are selected together to provide the desired open structure.
  • the pores 21 are formed by both the assembled particles 22 and the refractive index modifying particles 40.
  • Figs. 1 ID and 1 IE illustrate the photoactive layer 14 in modifications of the photovoltaic device 1 of Fig. 11 A in which the photoactive layer 14 comprises assembled particles 45, and the refractive index modifying material is distributed in the form of a coating 46.
  • the assembled particles 45 are generally the same as the assembled particles 21 in the examples described above.
  • the coating 46 is applied to the outer surfaces of the assembled particles 45 before assembly of the particles 45 into the layer of porous material 25, and so may be present on the interfaces between assembled particles 45, as well as on the surfaces of the pores 21.
  • the coating 46 is applied to the outer surfaces of the assembled particles 45 after assembly of the particles 45 into the layer of porous material 25, and so is present on the surfaces of the pores 21, but not on the interfaces between assembled particles 45.
  • the photoactive material 23 is provided in the normal manner, and is therefore supported by the porous material 25, albeit that the coating 46 is beneath the photoactive material 23.
  • the photoactive material 23 may be formed on the surfaces that define the pores 21, which may be surfaces of the coating 46 on the assembled particles 22 or may be surfaces of the coating 46 on the refractive index modifying particles 40.
  • the coating 46 is selected so that it modifies the refractive index of the photoactive layer 14 at wavelengths of visible light.
  • the material of the coating 46 may have a refractive index that is different from the refractive index of the material of the assembled particles 45 of the photoactive layer 14.
  • the refractive index may be controlled by selection of the material, configuration, and thickness of the coating 46.
  • the coating 46 may have sizes and materials as discussed above.
  • the coating 46 is made of semiconductor material, it may have an average thickness that is sufficiently large to prevent the flow of current between the porous material and the photoactive material, in order to render it effectively insulating to prevent current flow to or from the photoactive material 23 penetrating to the coated particles 45.
  • the coating 46 may be a complete coating that covers the surfaces of the particles 45 continuously.
  • Fig. 11 illustrates an alternative in which the coating 46 is a partial coating that covers the surfaces of the particles 45 discontinuously.
  • the coating 46 may be a continuous medium or may be a particulate coating that comprises discrete particles.
  • Fig. 12 illustrates a modified construction of the photovoltaic device 1 that has the same overall construction as described above with reference to Fig. 1, but is an example in which the first semiconductor layer 13 is optically modified as shown in Fig. 1, as described in detail above, and the photoactive layer 14 is also optically modified, as described in detail above.
  • the refractive index modifying particles 30 dispersed within the first semiconductor layer 13 can be the same as or different to the refractive index modifying particles 40 dispersed within the photoactive layer 14.
  • Fig. 13 illustrates a modified construction of the photovoltaic device 1 that has the same overall construction as described above with reference to Fig. 1, but is an example in which both the photoactive layer 14 and the second semiconductor layer 15 are optically modified as described below.
  • the semiconductor material of the photoactive layer 14 and the second semiconductor layer 15 have refractive index modifying particles 50 dispersed therein.
  • the refractive index modifying particles 50 therefore form a material that is distributed within the photoactive layer 14 and within the second semiconductor layer 15.
  • the refractive index modifying particles 50 are selected so that they modify the refractive index of the photoactive layer 14 and the second semiconductor layer 15 at wavelengths of visible light.
  • the material of the refractive index modifying particles may have a refractive index that is different from the refractive index of the materials of those layers.
  • the refractive index may be controlled by selection of the material, configuration, size and ratio of the refractive index modifying particles 50.
  • the refractive index modifying particles 50 may have sizes and materials as discussed above.
  • the refractive index modifying particles 50 may also modify the electrical properties of the photoactive layer 14 and the second semiconductor layer 15 and so are also selected having regard to their electrical properties.
  • the refractive index modifying particles 50 are straightforward to incorporate during manufacture.
  • the photovoltaic device 1 is manufactured using essentially the same process as before, but the refractive index modifying particles 50 are dispersed within the semiconductor material of the photoactive layer 14 and the second semiconductor layer 15. This is straightforward in the case that the first semiconductor layer 13 is a continuous phase of material, in which case the refractive index modifying particles 50 are simply mixed into that material.
  • the refractive index modifying particles 50 dispersed within both the photoactive layer 14 and the second semiconductor layer 15 are the same. However, it is equally possible that the refractive index modifying particles that are dispersed within the photoactive layer 14 could be different to the refractive index modifying particles that are second semiconductor layer 15.
  • Fig. 14 illustrates a modified construction of the photovoltaic device 1 that has the same overall construction as described above with reference to Fig. 1, but is an example in which the first semiconductor layer 13 is optically modified as shown in Fig. 1, as described in detail above, and also both the photoactive layer 14 and the second semiconductor layer 15 are optically modified as shown in Fig. 13, as described in detail above.
  • the refractive index modifying particles 50 dispersed within both the photoactive layer 14 and the second semiconductor layer 15 are the same, whilst the refractive index modifying particles 30 dispersed within the first semiconductor layer 13 are different to the refractive index modifying particles 50 dispersed within both the photoactive layer 14 and the second semiconductor layer 15.
  • the refractive index modifying particles that are dispersed within each of the first semiconductor layer 13, the photoactive layer 14 and the second semiconductor layer 15 are all different. It is also equally possible that the refractive index modifying particles that are dispersed within each of the first
  • the photoactive layer 14 and the second semiconductor layer 15 are all the same. Furthermore, it is also equally possible that any two of the first semiconductor layer 13, the photoactive layer 14 and the second semiconductor layer 15 could include the same refractive index modifying particles, whilst the other of the semiconductor layer 13, the photoactive layer 14 and the second semiconductor layer 15 includes different/alternative refractive index modifying particles.
  • Fig. 15 illustrates a modified construction of the photovoltaic device 1 that has the same overall construction as described above with reference to Fig. 5 A, but is an example in which the second semiconductor layer 15 is optically modified.
  • Fig. 16 illustrates a modified construction of the photovoltaic device 1 that has the same overall construction as described above with reference to Fig. 5A, but is an example in which the second semiconductor layer 15 is optically modified.
  • the semiconductor material of the second semiconductor layer 15 has refractive index modifying particles 50 dispersed therein.
  • the refractive index modifying particles 50 therefore form a material that is distributed within the photoactive layer 14 and within the second semiconductor layer 15.
  • the refractive index modifying particles 50 are selected so that they modify the refractive index of the second semiconductor layer 15 at wavelengths of visible light.
  • the material of the refractive index modifying particles 50 may have a refractive index that is different from the refractive index of the materials of those layers.
  • the refractive index may be controlled by selection of the material, configuration, size and ratio of the refractive index modifying particles 50.
  • the refractive index modifying particles 50 may have sizes and materials as discussed above.
  • the refractive index modifying particles 50 may also modify the electrical properties of the second semiconductor layer 15 and so are also selected having regard to their electrical properties.
  • the refractive index modifying particles 50 are straightforward to incorporate during manufacture.
  • the photovoltaic device 1 is manufactured using essentially the same process as before, but the refractive index modifying particles 50 are dispersed within the semiconductor material of the second semiconductor layer 15. This is straightforward in the case that the first semiconductor layer 13 is a continuous phase of material, in which case the refractive index modifying particles 50 are simply mixed into that material.
  • the photoactive material 23 that fills the pores 21 may comprise a photoactive perovskite, as described above.
  • present invention may be applied to a wide range of types of optoelectronic device and to a wide range of layers within such optoelectronic devices.
  • present invention may be applied to a light-emitting device that emits light (or other EM radiation) under application of an electrical voltage, for example a light-emitting diode.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention porte sur un dispositif photovoltaïque (1) comprenant une couche de base (11) ; une première couche conductrice (12) disposée sur la couche de base (11) ; une section photoactive (29) disposée sur la première couche conductrice (12), la section photoactive (20) comprenant une ou plusieurs couches (13, 14, 15) ; et une seconde couche conductrice (16) disposée sur la section photoactive (20). Au moins l'une des couches du dispositif est modifiée optiquement en ayant un matériau de modification d'indice de réfraction distribué dans cette dernière qui modifie l'indice de réfraction de la couche à des longueurs d'onde de lumière visible. Le matériau de modification d'indice de réfraction (par exemple 30) peut prendre la forme de particules qui peuvent être dispersées dans une couche qui comprend une phase continue de matériau ou des particules assemblées, ou peut prendre la forme d'un enrobage sur les surfaces de matériau structuré dans la couche. Par modification de l'indice de réfraction de la couche optiquement modifiée de manière à être plus proche de l'indice de réfraction d'une couche adjacente, une diffusion depuis l'interface entre les couches est réduite.
PCT/GB2015/050757 2014-03-21 2015-03-16 Structure d'un dispositif photovoltaïque Ceased WO2015140522A1 (fr)

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GB201405095A GB201405095D0 (en) 2014-03-21 2014-03-21 Structure of an optoelectronic device

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WO2015140522A1 true WO2015140522A1 (fr) 2015-09-24

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11758742B2 (en) 2014-05-20 2023-09-12 Oxford Photovoltaics Limited Increased-transparency photovoltaic device
WO2024111643A1 (fr) * 2022-11-24 2024-05-30 シャープ株式会社 Élément de conversion photoélectrique, module de cellules solaires l'utilisant et procédé de fabrication d'élément de conversion photoélectrique

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007005090A1 (de) * 2007-02-01 2008-08-07 Leonhard Kurz Gmbh & Co. Kg Organische Solarzelle
WO2009153328A1 (fr) * 2008-06-18 2009-12-23 Cambridge Enterprise Limited Dispositifs à diode électro-optique
US20110139253A1 (en) * 2009-12-11 2011-06-16 Konica Minolta Holdings, Inc. Organic photoelectric conversion element and producing method of the same
WO2013030553A1 (fr) * 2011-08-26 2013-03-07 Isis Innovation Limited Cellule solaire à colorant
CN103441217A (zh) * 2013-07-16 2013-12-11 华中科技大学 基于钙钛矿类吸光材料的介观太阳能电池及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007005090A1 (de) * 2007-02-01 2008-08-07 Leonhard Kurz Gmbh & Co. Kg Organische Solarzelle
WO2009153328A1 (fr) * 2008-06-18 2009-12-23 Cambridge Enterprise Limited Dispositifs à diode électro-optique
US20110139253A1 (en) * 2009-12-11 2011-06-16 Konica Minolta Holdings, Inc. Organic photoelectric conversion element and producing method of the same
WO2013030553A1 (fr) * 2011-08-26 2013-03-07 Isis Innovation Limited Cellule solaire à colorant
CN103441217A (zh) * 2013-07-16 2013-12-11 华中科技大学 基于钙钛矿类吸光材料的介观太阳能电池及其制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11758742B2 (en) 2014-05-20 2023-09-12 Oxford Photovoltaics Limited Increased-transparency photovoltaic device
WO2024111643A1 (fr) * 2022-11-24 2024-05-30 シャープ株式会社 Élément de conversion photoélectrique, module de cellules solaires l'utilisant et procédé de fabrication d'élément de conversion photoélectrique

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