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WO2015034097A1 - Masque de formation de film, dispositif de formation de film, procédé de formation de film, et substrat de panneau tactile - Google Patents

Masque de formation de film, dispositif de formation de film, procédé de formation de film, et substrat de panneau tactile Download PDF

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Publication number
WO2015034097A1
WO2015034097A1 PCT/JP2014/073761 JP2014073761W WO2015034097A1 WO 2015034097 A1 WO2015034097 A1 WO 2015034097A1 JP 2014073761 W JP2014073761 W JP 2014073761W WO 2015034097 A1 WO2015034097 A1 WO 2015034097A1
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WO
WIPO (PCT)
Prior art keywords
mask
film
substrate
opening
film forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2014/073761
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English (en)
Japanese (ja)
Inventor
重人 杉本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
V Technology Co Ltd
Original Assignee
V Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by V Technology Co Ltd filed Critical V Technology Co Ltd
Priority to KR1020167002711A priority Critical patent/KR20160055126A/ko
Priority to CN201480049663.0A priority patent/CN105531394B/zh
Publication of WO2015034097A1 publication Critical patent/WO2015034097A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • the present invention relates to a film formation mask, and in particular, film formation capable of improving the positional accuracy of a thin film pattern by suppressing the influence of mask deformation caused by a difference in linear expansion coefficient between the mask material and the thin film material by an inexpensive method.
  • the present invention relates to a mask, a film forming apparatus, a film forming method, and a touch panel substrate.
  • the conventional film-forming mask uses a film-forming mask that uses a flexible adhesive film made of a flexible film made of a flexible film that covers a portion that should be a non-deposition area and adheres closely to the substrate surface.
  • a film forming process in which the adhesive film is adhered to the entire surface of the base material on the film forming side, and then the flexible adhesive film covering a region where a desired deposited layer is to be formed is selectively removed and then the deposited layer is formed. Finally, the flexible adhesive film left on the substrate surface was removed (see, for example, Patent Document 1).
  • the mask material is a flexible resin film such as polyimide
  • a line between the film and a thin film material deposited on the film, for example, a transparent conductive film is used.
  • deformation of the film such as wrinkles and warpage occurred due to the difference in the expansion coefficient, and the position accuracy of the thin film pattern to be formed deteriorated.
  • a thin plate made of a magnetic metal material such as Invar or Invar alloy provided with a through-hole having a size including an opening pattern formed in a resin film is closely integrated with the film, and the back surface of the substrate. It is conceivable to form a film by attracting the magnetic thin plate with a magnet placed on the substrate and bringing the film into close contact with the film formation surface of the substrate. appear. Therefore, if the opening pattern is laser processed on the film after the film and the magnetic thin plate are fixed to the frame, the internal stress may be partially released and the opening pattern may be displaced. Therefore, it is difficult to improve the positional accuracy of the thin film pattern formed on the substrate.
  • the magnetic thin plate is deformed into a convex shape, so that a part of the film is lifted from the film-forming surface of the substrate.
  • the position of the opening pattern is shifted, and the thin film material is formed from the edge of the opening pattern to the gap between the film and the substrate, so that the edge of the thin film pattern is blurred. Therefore, in this case as well, it is difficult to improve the positional accuracy of the thin film pattern formed on the substrate.
  • the magnetic force acting on the magnetic thin plate is reduced due to the deformation of the magnetic thin plate, so that the position of the film forming mask may be shifted. This also improves the positional accuracy of the thin film pattern formed on the substrate. Have difficulty.
  • An object of the present invention is to provide a film formation mask, a film formation apparatus, a film formation method, and a touch panel substrate.
  • a film formation mask includes a first mask in which a plurality of first opening patterns having the same shape and dimension as a thin film pattern formed on a substrate are formed, and the plurality of first masks.
  • a second opening pattern having a size including at least one of the opening patterns is formed, and is placed on the first mask so as to be in an unconstrained state with respect to the first mask.
  • a second mask to be configured.
  • a film forming apparatus includes a first mask in which a plurality of first opening patterns having the same shape and dimensions as a thin film pattern formed on a substrate are formed in a vacuum chamber, and the plurality of first masks. And a second mask formed with a second opening pattern of a size that includes at least one of the opening patterns, and the first mask of the film formation mask provided in an unconstrained state therebetween.
  • the film forming method according to the present invention includes a first mask in which a plurality of first opening patterns having the same shape and dimensions as a thin film pattern formed on a substrate are formed, and the plurality of first opening patterns.
  • a third step of peeling the second mask from the first mask is performed.
  • substrate by this invention forms the electrode which consists of a transparent conductive film on the transparent glass substrate using the said film-forming method.
  • the deposition mask has a structure in which the second mask is overlaid on the first mask so as to be in an unrestrained state with respect to the first mask, and the first mask side is formed on the substrate. Since it is used in close contact with the film surface, the thin film material deposited on the mask is mainly on the second mask. Therefore, it is mainly the second mask that is deformed due to the difference in linear expansion coefficient between the mask material and the thin film material deposited thereon, and the deformation of the first mask that is the main mask is suppressed. be able to. Therefore, the positional accuracy of the thin film pattern to be formed can be improved.
  • the second mask can be peeled off and replaced with another second mask.
  • the formation accuracy of the second opening pattern of the second mask may be coarser than the formation accuracy of the first opening pattern of the first mask, the manufacturing cost of the second mask is low. Therefore, it is possible to suppress the influence on the positional deviation of the opening pattern due to the deformation of the mask by an inexpensive method, and to improve the positional accuracy of the thin film pattern to be formed.
  • FIG. 1A and 1B are diagrams showing an embodiment of a film formation mask according to the present invention, in which FIG. 1A is a plan view and FIG. It is a schematic block diagram which shows one Embodiment of the film-forming apparatus which uses the said film-forming mask. It is a follow chart explaining the film-forming method performed using the said film-forming apparatus. It is a top view which shows one structural example of the touchscreen board
  • FIG. 1A and 1B are diagrams showing an embodiment of a film forming mask according to the present invention, in which FIG. 1A is a plan view and FIG.
  • the film formation mask 1 is used for forming a film on a substrate through an opening pattern, and includes a first mask 2 and a second mask 3.
  • the first mask 2 is formed on the substrate through the first opening pattern 4 to form a thin film pattern.
  • the first mask 2 serves as a main mask, and is made of a resin film 5 and a metal.
  • the thin film 6 and the metal frame 7 are provided.
  • the 1st mask 2 may be comprised only with the film 5, in this embodiment, the case where the metal frame 7 is attached is demonstrated.
  • the film 5 is formed by forming a plurality of first opening patterns 4 penetrating in the same shape and dimensions as the thin film pattern corresponding to the plurality of thin film patterns formed on the substrate.
  • a resin film that transmits visible light such as polyimide or polyethylene terephthalate (PET) having a thickness of about 10 ⁇ m to 30 ⁇ m.
  • PET polyethylene terephthalate
  • polyimide having a linear expansion coefficient of approximately 3 ⁇ 10 ⁇ 6 to 5 ⁇ 10 ⁇ 6 / ° C., which approximates the linear expansion coefficient of glass as a film formation substrate will be described.
  • the film 5 is provided with an opening 8 that penetrates separately from the first opening pattern 4.
  • the opening 8 is for measuring a gap generated between the film 5 of the first mask 2 and a second mask 3 described later to estimate the deformation amount of the second mask 3.
  • the position of the surface 3a on the substrate side of the second mask 3 is measured through the opening 8 by the first sensor provided on the side opposite to the film forming surface of the transparent glass substrate, and the first sensor
  • the position of the surface 5a on the substrate side of the film 5 of the first mask 2 is measured by a second sensor provided adjacent to the first sensor, and the film 5 of the first mask 2 is measured based on both measured values.
  • a gap between the second mask 3 and the second mask 3 can be calculated.
  • a plurality of openings 8 may be formed in the film 5, and a plurality of sets of sensors each including a first sensor and a second sensor may be provided corresponding to each opening 8.
  • the gap between the film 5 of the first mask 2 and the second mask 3 is measured in a wide range, and the deformation amount of the second mask 3 is estimated more accurately by the maximum value or the average value. Can do.
  • a metal thin film 6 composed of a plurality of isolated patterns extends along the peripheral edge of the film 5 in the outer region of the effective region where the plurality of first opening patterns 4 are formed. Is provided.
  • This metal thin film 6 is spot welded to one end surface 7a of a metal frame 7 described later, and is used for fixing the film 5 to the metal frame 7, and is formed by plating, for example. Alternatively, it may be formed by sputtering or vapor deposition using a metal mask. After a metal thin film is formed on the entire surface 5a of the film 5, a pattern of a plurality of isolated metal thin films 6 is formed by etching. Also good.
  • a frame-shaped metal frame 7 having a size is provided.
  • the metal frame 7 supports the film 5 by spot welding the portion of the metal thin film 6 of the film 5 to the one end surface 7a in a state where the film 5 is stretched.
  • the thickness of the metal frame 7 is about 30 mm to 50 mm.
  • it is made of a magnetic metal material such as an Invar alloy.
  • the second mask 3 is installed so as to be peelable without being restrained in the horizontal direction with respect to the first mask 2.
  • the second mask 3 is used for preventing the thin film material from being deposited on the film 5 of the first mask 2 and the deformation of the film 5 based on the difference in linear expansion coefficient between the film 5 and the thin film material.
  • FIG. 2 is a schematic configuration diagram showing an embodiment of the film forming apparatus.
  • This film forming apparatus is for forming a plurality of thin film patterns on a substrate 11 using the film forming mask 1. For example, sputtering is performed by generating plasma between a target 12 and a substrate 11. Device.
  • the film forming apparatus is an RF sputtering apparatus.
  • the RF sputtering apparatus includes a target holder 14, a substrate holder 15, a shutter 16, a mask holder 17, and a mask loading mechanism 18 in a vacuum chamber 13.
  • the target holder 14 holds a target 12 obtained by shaping a film forming material into a plate shape.
  • the target holder 14 is electrically connected to a high-frequency power source 19 provided outside via a bypass capacitor 20 and has a high-frequency voltage of 13.56 MHz. Can be applied to form a cathode electrode.
  • a substrate holder 15 is provided below the target holder 14.
  • the substrate holder 15 holds a glass substrate 11 as a film formation substrate so as to face the target 12, and is grounded and serves as an anode electrode.
  • the substrate sensor 15 incorporates a first sensor 21 corresponding to the opening 8 of the first mask 2 of the film formation mask 1 held by the mask holder 17 described later.
  • a second sensor 22 is incorporated adjacent to (see FIG. 5).
  • the first sensor 21 is for measuring the relative position in the height direction of the surface 3 a of the second mask 3 on the substrate 11 side through the opening 8 of the first mask 2, and the second sensor 22. Is for measuring the relative position in the height direction of the surface 5a of the film 5 of the first mask 2 on the substrate 11 side, and includes both a light-emitting part and a light-receiving part, for example. It is a displacement sensor of a triangulation system that converts an imaging position into a distance.
  • a shutter 16 is provided between the target holder 14 and the substrate holder 15 so as to be able to advance and retreat.
  • This shutter 16 is for moving in the directions of arrows A and B in FIG. 2 to open and close the passage of the sputtered particles, and during the sputtering performed by generating plasma between the substrate 11 and the target 12, the arrow A
  • the film thickness of the thin film to be deposited can be controlled by controlling the time from moving in the direction to open the sputtered particle passage to moving in the arrow B direction to close the sputtered particle passage. ing.
  • a mask holder 17 is provided between the substrate holder 15 and the shutter 16.
  • the mask holder 17 holds the film formation mask 1 such that the first mask 2 side is on the substrate holder 15 side.
  • the mask holder 17 holds the edge of the film formation mask 1 with the first mask 2.
  • the second mask 3 is integrally held.
  • a mask loading mechanism 18 is provided so that the mask holder 17 can be driven.
  • the mask loading mechanism 18 moves the mask holder 17 forward and backward between, for example, the substrate holder 15 and the shutter 16 and further moves it up and down.
  • the mask loading mechanism 18 moves the film 5 of the first mask 2 to the substrate holder when the mask holder 17 is lowered. 15 can be brought into close contact with the film forming surface of the substrate 11 held by the substrate 15.
  • reference numeral 23 is an exhaust port for exhausting the gas in the vacuum chamber 13
  • reference numeral 24 is a gas introduction port for introducing an inert gas into the vacuum chamber 13.
  • Reference numeral 25 denotes a shield member for preventing the anode ions from colliding with, for example, a portion of the target holder 14 other than the portion of the target 12 facing the substrate 11, and corresponds to the central region of the target 12.
  • An opening 26 is provided.
  • the film forming apparatus is an in-line film forming apparatus provided with a front chamber that is partitioned by a gate valve and can be evacuated next to a vacuum chamber 13 as a film forming chamber.
  • a target 12 of indium tin oxide hereinafter referred to as “ITO (Indium Tin Oxide)” is attached to a target holder 14 in a vacuum chamber 13.
  • the film formation mask 1 which is superposed and integrated is held by the mask holder 17. At this time, the film formation mask 1 is held so that the first mask 2 is on the substrate holder 15 side (lower side in FIG. 2). Thereby, the film formation preparation is completed (step S1).
  • vacuuming is performed until the degree of vacuum in the vacuum chamber 13 reaches a predetermined value.
  • the exhaust valve provided in the exhaust port 23 is opened, and the inside of the vacuum chamber 13 is exhausted.
  • the gas introduction valve of the gas introduction port 24 is closed.
  • a plurality of transparent glass substrates 11 as film formation substrates are accommodated in a cassette (not shown), for example. Have been waiting.
  • a gate valve (not shown) that partitions the front chamber and the vacuum chamber 13 is opened, and a plurality of glass substrates 11 waiting in the front chamber are opened. One of them is transported by a substrate loading mechanism (not shown) and placed at the center of the substrate holder 15 in the vacuum chamber 13 (step S2). Thereafter, the gate valve is closed.
  • the mask loading mechanism 18 is activated to position the deposition mask 1 on the substrate 11, for example, an illustration provided in advance on the glass substrate 11 by an alignment camera (not shown) provided in the substrate holder 15.
  • An omitted alignment mark and an alignment mark (not shown) provided in advance on the first mask 2 of the film formation mask 1 are photographed, and the film formation mask 1 side, for example, is placed so that both alignment marks have a predetermined positional relationship. Move and align.
  • the deposition mask 1 is lowered by the mask loading mechanism 18, and the film 5 of the first mask 2 is brought into close contact with the deposition surface of the glass substrate 11 (step S3).
  • a magnet may be provided on the substrate holder 15 on the side of the peripheral edge of the glass substrate 11, and the metal frame 7 of the deposition mask 1 may be attracted by the magnet to fix the deposition mask 1 to the substrate holder 15.
  • the total height of the magnet and the metal frame 7 is the height of the glass substrate 11 so that the film 5 of the first mask 2 of the film formation mask 1 hangs down by its own weight and comes into close contact with the film formation surface of the glass substrate 11. It is desirable to set the height of the magnet and the metal frame 7 to be slightly higher than the dimensions.
  • the first and second sensors 21 and 22 measure the size of the gap between the film 5 of the first mask 2 and the second mask 3. Specifically, as shown in FIG. 5, first by the sensor 21 while irradiating through the first opening 8 of the mask 2, for example a laser beam L 1, the second surface 3a of the substrate 11 side of the mask 3 in position to be imaged on the light receiving element of the reflected laser beam L 1, and measuring the displacement amount with respect to a predetermined reference position, the triangular distance method by the second mask 3 of the substrate 11-side surface 3a measuring the position t 1 in the height direction.
  • a gas introduction valve (not shown) is opened, and an inert gas, for example, argon (Ar) gas at a constant flow rate is introduced from the gas introduction port 24. Further, an exhaust valve (not shown) of the exhaust port 23 is adjusted to adjust the exhaust flow rate, and the amount of Ar gas in the vacuum chamber 13 is set to a predetermined value.
  • an inert gas for example, argon (Ar) gas at a constant flow rate
  • the high frequency power supply 19 is activated, and a predetermined high frequency voltage is applied to the target holder 14 (cathode electrode).
  • the Ar gas is ionized and plasma is generated between the target 12 and the substrate 11.
  • the shutter 16 is closed.
  • step S5 After pre-sputtering is performed for a certain time with the shutter 16 closed, the shutter 16 is opened and main sputtering is started (step S5). Then, when a predetermined time elapses in this sputtering, the shutter 16 is closed and the film formation is completed. As a result, an ITO transparent conductive film 29 is formed on the glass substrate 11 through the first opening pattern 4 of the first mask 2 as shown in FIG. 6, and the transparent electrode 28 as shown in FIG. The touch panel substrate 27 on which is formed is manufactured.
  • the first sensor 21 causes the height position t 1 ′ of the surface 3a of the second mask 3 and the second sensor 22 as shown in FIG.
  • the height position t 2 ′ of the surface 5 a of the film 5 of the first mask 2 is measured, and (t 1 ′ ⁇ t 2 ′ ⁇ t 0 ) is calculated to calculate the distance between the first and second masks 2 and 3.
  • a gap dimension ⁇ t ′ is calculated.
  • the gap size ⁇ t between the first and second masks 2 and 3 before the start of film formation read from the memory of the control PC and the same gap size ⁇ t ′ after the film formation are subtracted to increase the gap.
  • ( ⁇ t′ ⁇ t) is calculated (step S6).
  • the film formation mask 1 When film formation is being performed, the film formation mask 1 is heated by plasma, and the temperature of the film formation mask 1 rises. Therefore, when an ITO film is deposited on the second mask 3 by film formation, the linear expansion coefficient of ITO is about 7.2 ⁇ 10 ⁇ 6 / ° C., whereas the second mask 3 Since the linear expansion coefficient of polyimide is about 3 ⁇ 10 ⁇ 6 / ° C., the second mask 3 has a convex shape as shown in FIG. 7 due to the difference in linear expansion coefficient with the transparent conductive film 29 made of ITO. Deform. The amount of deformation increases as the film thickness of the transparent conductive film 29 increases. That is, the gap between the first and second masks 2 and 3 is increased.
  • the deformation amount of the second mask 3 exceeds the allowable range based on the increase amount ( ⁇ t′ ⁇ t) of the gap dimension between the first and second masks 2 and 3 (step). S7).
  • the transparent conductive film 29 deposited on the edge of the first opening pattern 4 of the first mask 2 is separated from the transparent conductive film 29 deposited on the edge of the adjacent first opening pattern 4.
  • the deformation of the film 5 based on the difference in linear expansion coefficient between the film 5 of the first mask 2 and the transparent conductive film 29 deposited thereon is so small as to be negligible. Therefore, attention should be paid to the deformation amount of the second mask 3 here.
  • the calculated increase amount ( ⁇ t′ ⁇ t) of the gap is compared with a determination reference value (threshold value) of an allowable value stored in the memory. And then.
  • a determination reference value threshold value
  • the increase amount of the gap ( ⁇ t′ ⁇ t) is smaller than the threshold value, it is determined that the deformation amount of the second mask 3 is within the allowable range (“NO” determination in step S7).
  • the high frequency power source 19 is turned off, the gas introduction valve is closed, and the introduction of Ar gas is stopped. Further, the exhaust valve is opened, and the gas in the vacuum chamber 13 is exhausted.
  • step S7 when it is determined that the deformation amount of the second mask 3 is within the allowable range and the determination is “NO”, the mask loading mechanism 18 is activated and the film formation mask 1 is placed in the standby position. To move. Further, the gate valve is opened, the substrate loading mechanism is activated, and the touch panel substrate 27 is carried from the vacuum chamber 13 to the front chamber (step S8) and accommodated in the cassette. Then, another glass substrate 11 in the cassette is transferred into the vacuum chamber 13 by the substrate loading mechanism (step S9) and placed on the substrate holder 15 (step S2).
  • step S3 the gap dimension between the first and second masks 2 and 3 is measured. Note that the measurement of the gap dimension at this stage may be omitted.
  • step S5 Ar gas is introduced into the vacuum chamber 13 in the same manner as described above, and film formation is started (step S5).
  • the gap size between the first and second masks 2 and 3 is measured in the same manner as described above. Further, this measured value is subtracted from the gap size value ⁇ t initially stored in the memory of the control PC (step S6) and compared with a threshold value stored in the memory (step S7).
  • YES determination in step S7
  • the inside of the vacuum chamber 13 is evacuated and the touch panel substrate 27 is carried out (step S10). . Then, with the gate valve separating the vacuum chamber 13 and the front chamber closed, the vacuum in the vacuum chamber 13 is broken to atmospheric pressure, and the chamber is opened. Further, after peeling off and removing the second mask 3 of the film formation mask 1 held by the mask holder 17, another second mask 3 is attached (step S11). Then, after evacuating the vacuum chamber 13 in the same manner as described above, the new substrate 11 is transported (step S9), placed on the substrate holder 15 (step S2), and then onto the new glass substrate 11. The film formation is started.
  • the film forming material is mainly deposited on the second mask 3. Therefore, it is mainly the second mask 3 that is deformed by the deposition of the film forming material, and deformation of the film 5 of the first mask 2 can be suppressed. That is, the processing accuracy and position accuracy of the opening pattern 10 of the second mask 3 may be coarser than that of the opening pattern 4 of the first mask 2, and the first and second masks 2 and 3 are arranged in the horizontal direction. Therefore, even if the second mask 3 is slightly deformed, the influence on the positional accuracy of the opening pattern 4 of the first mask 2 is small.
  • the positional accuracy of the thin film pattern formed on the substrate 11 can be improved. Since the second mask 3 is detachably installed on the first mask 2, it can be replaced when the second mask 3 is deformed beyond a preset value. Therefore, the deposition mask 1 can be used for a long time while maintaining the positional accuracy of the first opening pattern 4 of the first mask 2 over a long period of time. Further, since the processing accuracy of the opening pattern 10 of the second mask 3 may be coarser than the processing accuracy of the opening pattern 4 of the first mask 2, the manufacturing cost of the second mask 3 is the same as that of the first mask 2. Lower than manufacturing cost. Therefore, the cost of the film formation mask 1 can be reduced.
  • the replacement time of the second mask 3 is determined when the deformation amount of the second mask 3 exceeds a predetermined threshold.
  • the replacement time may be determined based on the film formation time. In this case, the relationship between the number of times the film formation mask 1 is used or the film formation time and the deformation amount of the second mask 3 may be examined in advance through experiments.
  • the 2nd mask 3 is a magnetic or nonmagnetic metal film or metal sheet. It may be formed by. Further, similarly to the first mask 2, a frame-shaped metal frame having openings of a size that includes the plurality of second opening patterns 10 may be provided on the outer peripheral edge of the second mask 3. .
  • the present invention is not limited to this, and any thin film of an organic or inorganic material may be used.
  • the present invention may be a batch type film forming apparatus.
  • the film-forming apparatus may be a vapor deposition apparatus.

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  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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Abstract

La présente invention concerne : un premier masque (2) formant plusieurs premiers motifs ouverts (4) ayant les mêmes formes et dimensions en qualité de motif de film fin formé sur un substrat ; et un second masque (3) formant un second motif ouvert (10) d'une taille englobant au moins lesdits plusieurs premiers motifs ouverts (4), et disposé de manière à chevaucher le premier masque (2) et ne pas se coller u premier masque (2).
PCT/JP2014/073761 2013-09-09 2014-09-09 Masque de formation de film, dispositif de formation de film, procédé de formation de film, et substrat de panneau tactile Ceased WO2015034097A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020167002711A KR20160055126A (ko) 2013-09-09 2014-09-09 성막 마스크, 성막 장치, 성막 방법 및 터치 패널 기판
CN201480049663.0A CN105531394B (zh) 2013-09-09 2014-09-09 成膜掩模、成膜装置、成膜方法以及触摸面板基板

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013186711A JP6142393B2 (ja) 2013-09-09 2013-09-09 成膜マスク、成膜装置及び成膜方法並びにタッチパネル基板
JP2013-186711 2013-09-09

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WO2015034097A1 true WO2015034097A1 (fr) 2015-03-12

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PCT/JP2014/073761 Ceased WO2015034097A1 (fr) 2013-09-09 2014-09-09 Masque de formation de film, dispositif de formation de film, procédé de formation de film, et substrat de panneau tactile

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JP (1) JP6142393B2 (fr)
KR (1) KR20160055126A (fr)
CN (1) CN105531394B (fr)
TW (1) TW201522677A (fr)
WO (1) WO2015034097A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
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WO2017056656A1 (fr) * 2015-09-30 2017-04-06 フォックスコン日本技研株式会社 Procédé pour la production de film de résine ayant un motif fin, procédé pour la production de dispositif d'affichage électroluminescent organique, film de base pour la formation de motif fin et film de résine muni d'un élément de support
WO2017119153A1 (fr) * 2016-01-06 2017-07-13 鴻海精密工業股▲ふん▼有限公司 Masque de dépôt en phase vapeur et procédé de fabrication de celui-ci, et procédé de fabrication de dispositif d'affichage el organique

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106367716B (zh) * 2015-07-24 2020-01-07 上海和辉光电有限公司 掩模板及显示面板的制作方法
CA3019499A1 (fr) 2016-03-31 2017-10-05 Intercept Pharmaceuticals, Inc. Comprime enrobe d'un film et presentant une stabilite chimique elevee de son principe actif
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CN113093944A (zh) * 2021-04-19 2021-07-09 江西展耀微电子有限公司 线路及其制备方法、触摸屏

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143265U (fr) * 1981-03-02 1982-09-08
JPS62295310A (ja) * 1986-06-13 1987-12-22 松下電器産業株式会社 透明導電膜の製法
JPS6445160U (fr) * 1987-09-05 1989-03-17
JP2001135704A (ja) * 1999-11-09 2001-05-18 Sharp Corp 基板処理装置及び基板搬送用トレイの搬送制御方法
JP2005163099A (ja) * 2003-12-02 2005-06-23 Seiko Epson Corp マスク、マスクの製造方法、有機ｅｌ装置の製造方法、有機ｅｌ装置
JP2006063361A (ja) * 2004-08-25 2006-03-09 Daishinku Corp 成膜マスク装置
US20060110904A1 (en) * 2004-11-23 2006-05-25 Advantech Global, Ltd Multiple shadow mask structure for deposition shadow mask protection and method of making and using same
JP2012111985A (ja) * 2010-11-22 2012-06-14 Toppan Printing Co Ltd 蒸着マスクおよびそれを用いた薄膜パターン形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100534580B1 (ko) * 2003-03-27 2005-12-07 삼성에스디아이 주식회사 표시장치용 증착 마스크 및 그의 제조방법
CN102945788B (zh) * 2011-08-16 2015-04-15 北京北方微电子基地设备工艺研究中心有限责任公司 遮蔽装置及具有其的半导体处理设备
CN105385990A (zh) * 2012-01-12 2016-03-09 大日本印刷株式会社 拼版蒸镀掩模的制造方法及有机半导体元件的制造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143265U (fr) * 1981-03-02 1982-09-08
JPS62295310A (ja) * 1986-06-13 1987-12-22 松下電器産業株式会社 透明導電膜の製法
JPS6445160U (fr) * 1987-09-05 1989-03-17
JP2001135704A (ja) * 1999-11-09 2001-05-18 Sharp Corp 基板処理装置及び基板搬送用トレイの搬送制御方法
JP2005163099A (ja) * 2003-12-02 2005-06-23 Seiko Epson Corp マスク、マスクの製造方法、有機ｅｌ装置の製造方法、有機ｅｌ装置
JP2006063361A (ja) * 2004-08-25 2006-03-09 Daishinku Corp 成膜マスク装置
US20060110904A1 (en) * 2004-11-23 2006-05-25 Advantech Global, Ltd Multiple shadow mask structure for deposition shadow mask protection and method of making and using same
JP2012111985A (ja) * 2010-11-22 2012-06-14 Toppan Printing Co Ltd 蒸着マスクおよびそれを用いた薄膜パターン形成方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017056656A1 (fr) * 2015-09-30 2017-04-06 フォックスコン日本技研株式会社 Procédé pour la production de film de résine ayant un motif fin, procédé pour la production de dispositif d'affichage électroluminescent organique, film de base pour la formation de motif fin et film de résine muni d'un élément de support
JPWO2017056656A1 (ja) * 2015-09-30 2018-05-24 鴻海精密工業股▲ふん▼有限公司 微細パターンを有する樹脂フィルムの製造方法および有機ｅｌ表示装置の製造方法ならびに微細パターン形成用基材フィルムとサポート部材付き樹脂フィルム
CN108474100A (zh) * 2015-09-30 2018-08-31 鸿海精密工业股份有限公司 具有微细图案的树脂薄膜的制造方法以及有机el显示装置的制造方法与微细图案形成用基材薄膜和具有支撑部件的树脂薄膜
JP2019090114A (ja) * 2015-09-30 2019-06-13 鴻海精密工業股▲ふん▼有限公司Ｈｏｎ Ｈａｉ Ｐｒｅｃｉｓｉｏｎ Ｉｎｄｕｓｔｒｙ Ｃｏ．，Ｌｔｄ． 微細パターンを有する樹脂フィルムの製造方法および有機ｅｌ表示装置の製造方法ならびに微細パターン形成用基材フィルムとサポート部材付き樹脂フィルム
JP2019090116A (ja) * 2015-09-30 2019-06-13 鴻海精密工業股▲ふん▼有限公司Ｈｏｎ Ｈａｉ Ｐｒｅｃｉｓｉｏｎ Ｉｎｄｕｓｔｒｙ Ｃｏ．，Ｌｔｄ． 微細パターンを有する樹脂フィルムの製造方法および有機ｅｌ表示装置の製造方法ならびに微細パターン形成用基材フィルムとサポート部材付き樹脂フィルム
JP2019090115A (ja) * 2015-09-30 2019-06-13 鴻海精密工業股▲ふん▼有限公司Ｈｏｎ Ｈａｉ Ｐｒｅｃｉｓｉｏｎ Ｉｎｄｕｓｔｒｙ Ｃｏ．，Ｌｔｄ． 微細パターンを有する樹脂フィルムの製造方法および有機ｅｌ表示装置の製造方法ならびに微細パターン形成用基材フィルムとサポート部材付き樹脂フィルム
JP2020111832A (ja) * 2015-09-30 2020-07-27 鴻海精密工業股▲ふん▼有限公司Ｈｏｎ Ｈａｉ Ｐｒｅｃｉｓｉｏｎ Ｉｎｄｕｓｔｒｙ Ｃｏ．，Ｌｔｄ． 微細パターンを有する樹脂フィルムの製造方法および有機ｅｌ表示装置の製造方法
US10840449B2 (en) 2015-09-30 2020-11-17 Hon Hai Precision Industry Co., Ltd. Method for producing resin film having fine pattern, method for producing organic el display device, base film for forming fine pattern, and resin film provided with supporting member
WO2017119153A1 (fr) * 2016-01-06 2017-07-13 鴻海精密工業股▲ふん▼有限公司 Masque de dépôt en phase vapeur et procédé de fabrication de celui-ci, et procédé de fabrication de dispositif d'affichage el organique
JPWO2017119153A1 (ja) * 2016-01-06 2018-05-24 鴻海精密工業股▲ふん▼有限公司 蒸着マスク及びその製造方法、有機ｅｌ表示装置の製造方法
US10580985B2 (en) 2016-01-06 2020-03-03 Hon Hai Precision Industry Co., Ltd. Deposition mask, method for manufacturing thereof, and method for manufacturing organic EL display device

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