[go: up one dir, main page]

WO2015025510A1 - Élément de conversion photoélectrique, et procédé de fabrication d'élément de conversion photoélectrique - Google Patents

Élément de conversion photoélectrique, et procédé de fabrication d'élément de conversion photoélectrique Download PDF

Info

Publication number
WO2015025510A1
WO2015025510A1 PCT/JP2014/004208 JP2014004208W WO2015025510A1 WO 2015025510 A1 WO2015025510 A1 WO 2015025510A1 JP 2014004208 W JP2014004208 W JP 2014004208W WO 2015025510 A1 WO2015025510 A1 WO 2015025510A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
photoelectric conversion
conversion element
film formation
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2014/004208
Other languages
English (en)
Japanese (ja)
Inventor
訓裕 川本
克也 岡部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of WO2015025510A1 publication Critical patent/WO2015025510A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a photoelectric conversion element that forms a film using a mask.
  • Patent Document 1 relates to the manufacture of an organic EL element, but a vapor deposition method is adopted for forming an organic layer and a metal electrode. In vapor deposition, openings corresponding to predetermined patterns required for each layer are used. It is stated that a vapor deposition mask with a part is used.
  • the photoelectric conversion element In the film formation of the photoelectric conversion element, it is necessary to make the photoelectric conversion area as wide as possible while ensuring the overlap between the substrate and the mask for pressing the substrate with the mask.
  • the photoelectric conversion element according to the present invention includes a substrate and a film-forming layer deposited on the substrate, the film-forming layer having at least one notch that is not deposited on the periphery.
  • a method for manufacturing a photoelectric conversion element includes a step of preparing a substrate to be formed, and a step of preparing a mask having an opening that defines a film formation region, from the periphery of the opening to the opening. Preparing a mask having at least one substrate pressing projection protruding toward the inside of the substrate, positioning the mask opening portion so as to face the film-forming surface of the substrate, and forming the mask on the substrate through the mask opening portion. A film layer is formed.
  • the present invention it is possible to widen the photoelectric conversion possible region while ensuring the overlap between the substrate and the mask.
  • FIG. 1 is a diagram showing a photoelectric conversion element 10.
  • the main surface of the photoelectric conversion element 10 includes a light receiving surface and a back surface.
  • (A) is a plan view viewed from the light receiving surface side, and
  • (b) is a light receiving surface side above the paper surface and a back surface side below the paper surface.
  • (C) is an enlarged view of (b).
  • the photoelectric conversion element 10 generates photogenerated carriers of holes and electrons by receiving light such as sunlight.
  • the photoelectric conversion element 10 includes a substrate 12 and a plurality of film formation layers 13 that are sequentially stacked thereon.
  • the film-forming layer 13 is formed by depositing a predetermined thin film in a film-forming region smaller than the outer shape of the substrate 12, and has a notch 14 on the periphery of which the predetermined thin film is not deposited. In FIG. 1, three notches 14 C , 14 L , and 14 R are shown. Details of the notch 14 will be described later.
  • the substrate 12 is crystalline silicon (c-Si).
  • a semiconductor material such as gallium arsenide (GaAs) or indium phosphorus (InP) can be used.
  • the film forming layer 13 is a thin film layer that has the substrate 12 and the photoelectric conversion element 10 in a broad pn junction structure.
  • a pn junction structure in a broad sense a heterojunction of crystalline silicon and amorphous silicon can be used.
  • the substrate 12 is an n-type single crystal silicon substrate
  • a p-type film formation layer 13 is formed on the light receiving surface side of the substrate 12
  • an n-type film formation layer 15 is formed on the back surface side.
  • the film-forming layer 13 on the light-receiving surface side is a p-type amorphous material doped with i-type amorphous silicon layer 16, boron (B) and the like. It is obtained by sequentially laminating a silicon layer 17 and a transparent conductive film (TCO) 18 composed of a light-transmitting conductive oxide of indium oxide (In 2 O 3 ).
  • the film-forming layer 15 on the back surface side is formed on the back surface side of the n-type single crystal silicon substrate, which is the substrate 12, and on the light-receiving surface side of the n-type single crystal silicon substrate, which is the substrate 12, It is obtained by laminating an n-type amorphous silicon layer 20 doped with phosphorus (P) or the like and a transparent conductive film 21.
  • the photoelectric conversion element 10 may have a structure other than this as long as it has a function of converting light such as sunlight into electricity.
  • the substrate 12 may be a p-type polycrystalline silicon substrate, an n-type diffusion layer may be formed on the light receiving surface side, and an aluminum metal film may be formed on the back surface side.
  • the notch portion 14 is derived from a substrate pressing projection provided on a mask used for forming the film forming layers 13 and 15 on the substrate 12, and the substrate 12 is covered with the portion of the substrate pressing projection so that the substrate 12 is a place where a predetermined thin film is not deposited.
  • FIG. 2 is a diagram showing positioning between the substrate 12 and the mask
  • FIG. 3 is an enlarged view thereof.
  • FIG. 4 is a diagram illustrating the operation of the substrate pressing protrusion provided on the mask.
  • First step of the method for manufacturing the photoelectric conversion element 10 is a step of preparing the substrate 12.
  • an n-type single crystal silicon substrate is prepared as the substrate 12.
  • the prepared substrate 12 is positioned and arranged on the tray 22 of the film forming apparatus.
  • the tray 22 is shown in FIG.
  • An appropriate jig can be used for positioning and fixing the substrate 12 to the tray 22.
  • a procedure for forming the film formation layer 13 on the light receiving surface side of the substrate 12 will be described unless otherwise specified.
  • the film formation layer 15 can be formed on the back surface side of the substrate 12 by the same procedure.
  • a predetermined metal mask is positioned and arranged on the substrate 12 as the mask 30. This procedure will be described separately for the process of preparing the mask 30 and the process of positioning and arranging the prepared mask 30 on the light receiving surface side of the substrate 12.
  • the step of preparing the mask 30 is a step of preparing a mask having an opening that defines a film formation region, and has at least one substrate pressing protrusion protruding from the peripheral edge of the opening toward the inside of the opening. This is a step of preparing a mask.
  • the mask 30 is a film forming mask.
  • the mask 30 has an opening 32 surrounded by a frame 31 on four sides.
  • the opening 32 is a window for defining a film forming region on the substrate 12 within this range when a predetermined thin film is deposited in the next film forming process.
  • the four corners of the opening 32 have an oblique shape 33, but this corresponds to the case where the four corners of the substrate 12 have an oblique shape, and is not necessarily required.
  • the mask 30 has a substrate pressing protrusion 34 that protrudes from the peripheral edge of the opening 32 toward the inside of the opening 32.
  • the peripheral edge of the opening 32 is the inner edge of the frame 31.
  • “Toward the inside of the opening 32” means not in the direction of the recess that cuts out the frame 31, but in the direction in which the inner edge of the frame 31 protrudes.
  • the substrate pressing protrusion 34 is provided on the frame 31 on the upper side of the paper toward the lower side of the paper. In this case, the direction toward the lower side of the paper surface is the direction toward the inside of the opening 32.
  • Substrate holding projections 34 along the longitudinal direction of the frame portion 31, the substrate holding protrusion 34 C is provided at the center thereof, a substrate holding protrusion 34 L on the left side, the substrate holding projections 34 on the right Each R is provided.
  • the protrusion amount of the substrate pressing protrusion 34 is shown as D1.
  • a material obtained by processing an appropriate material into a predetermined shape can be used.
  • a metal material can be used, for example, stainless steel can be used.
  • a predetermined shape as shown in FIG. 2, a plurality of substrates 12 may have a shape having a number of openings 32 corresponding to the number of the substrates. Instead of this, the shape having one opening 32 may be used as one mask 30 for one substrate 12.
  • the step of positioning and arranging the prepared mask 30 on the light receiving surface side of the substrate 12 is performed such that the overlap in the plan view of the substrate 12 and the mask 30 is the same size along the peripheral edge of the substrate 12. Be placed.
  • the peripheral edge of the substrate 12 is covered with the mask 30, and this is indicated by a broken line.
  • the overlapping of the substrate 12 and the mask 30 has the same size along the peripheral edge of the substrate 12.
  • the tip of the substrate pressing projection 34 is the innermost edge of the peripheral edge of the mask 30 and the four sides of the frame portion 31 are the same. It means the same.
  • the magnitude of this overlap is shown as D2.
  • the peripheral portion of the frame portion 31 recedes outside except for the protruding portion of the substrate pressing projection 34, and only the corresponding region 35 is obtained.
  • the opening area of the opening 32 increases. Since the opening area corresponds to the photoelectric conversion possible area in the photoelectric conversion element 10, the photoelectric conversion possible area is expanded by the area of the expanded area 35.
  • the shape of the substrate pressing projection 34 can be a semicircular shape having a sufficiently small diameter compared to the length L of one side of the opening 32. Therefore, the area of the expanded region 35 is a value close to ⁇ (length L of one side of the opening 32) ⁇ (projection amount D1 of the substrate pressing projection 34) ⁇ .
  • the substrate pressing projection 34 having a sufficiently small dimension compared to the length L of one side of the opening 32, the substrate pressing projection 34 spreads while ensuring the overlap between the substrate 12 and the mask 30.
  • the photoelectric conversion possible region can be made wider by the area of the region 35.
  • a film forming process is performed next.
  • the film forming process is performed using a predetermined film forming apparatus.
  • a CVD first chamber in which an i-type amorphous silicon layer 16 is deposited
  • a second chamber in which a p-type amorphous silicon layer 17 is deposited
  • a third chamber in which a transparent conductive film 18 is deposited.
  • CVD Chemical Vapor Deposition
  • a tray 22 on which a set in which the substrate 12 and the mask 30 are combined is mounted on the tray 22 in a predetermined film formation order using the first chamber, the second chamber, and the third chamber. Then, the predetermined film formation layer 13 is formed by sequentially conveying the film. It is preferable to provide a separation chamber between the chambers so that i-type, p-type, etc. are not mixed.
  • a horizontal tray in which the substrate 12 and the mask 30 are arranged in the horizontal direction can be used. Instead, a vertical tray in which the substrate 12 and the mask 30 are arranged in parallel to the vertical direction may be used.
  • the mask 30 is removed from the substrate 12.
  • a notched portion 14 that has not been formed is formed corresponding to the substrate pressing protrusion 34.
  • the photoelectric conversion area is narrowed by the area of the notch 14, the shape of the notch 14 is the same as the shape of the substrate pressing protrusion 34, which is sufficiently larger than the length L of one side of the film formation layer 13.
  • the film forming process is performed on the film forming layer 15 on the back side of the substrate 12 with the same processing contents.
  • the photoelectric conversion element 10 is obtained by completing these film forming processes (S14).
  • FIG. 5 shows a state where the photoelectric conversion possible area is enlarged without providing the substrate pressing projection 34.
  • the size of the overlap between the substrate 12 and the mask 30 is (D2-D1) without providing the substrate pressing projection 34.
  • the overlap size is (D2 ⁇ D1) compared to the case where the overlap size is D2
  • the enlargement amount of the photoelectric conversion possible area is ⁇ (length L of one side of the opening 32) ⁇ (substrate presser).
  • the protrusion amount D1) ⁇ of the protrusion 34 is the protrusion amount of the protrusion 34.
  • FIG. 5A shows an initial state in which the substrate 12 and the mask 30 are positioned.
  • the initial state is room temperature.
  • (B) shows a state in which the film formation process has been performed and the temperature has increased.
  • the mask 30 is made of stainless steel, and the substrate 12 is single crystal silicon.
  • the linear expansion coefficient of stainless steel and the linear expansion coefficient of single crystal silicon are considerably different, and stainless steel has a larger linear expansion coefficient than single crystal silicon.
  • the size of the overlap between the substrate 12 and the mask 30 is (D2-D1), so that the substrate 12 is not detached from the mask 30.
  • the substrate 12 having a small linear expansion coefficient is hardly deformed, but the mask 30 having a large linear expansion coefficient is deformed according to the temperature.
  • the size of the overlap between the substrate 12 and the mask 30 becomes smaller than (D2-D1).
  • the substrate 12 is brought into a free state from the state of being pressed by the mask 30. In particular, when the vertical tray is used, the substrate 12 may be detached from the mask 30. .
  • the size of the overlap is reduced.
  • the size of the overlap is (D2-D1), and the substrate 12 may be detached from the mask 30 at a high temperature.
  • the substrate pressing projection 34 can ensure the overlap between the substrate 12 and the mask 30, and the substrate 12 is prevented from being detached from the mask 30 even at high temperatures. Further, by providing the substrate pressing protrusion 34 having a sufficiently small size compared to the length L of one side of the opening 32, the photoelectric conversion possible region can be further widened.
  • the notch portion 14 is derived from the substrate pressing projection 34 of the mask 30, but the portion where the substrate 12 and the mask 30 are likely to come off from the mask 30 due to a decrease in temperature due to a rise in temperature is located on the frame portion 31 of the mask 30. It is a central part in the extending direction. Therefore, it is preferable to provide the substrate pressing protrusions 34 C first, and if necessary, the substrate pressing protrusions 34 L and 34 R on the left and right sides thereof. Even if the substrate pressing projection 34 is provided after providing the substrate pressing projection 34 necessary to prevent the substrate 12 from being removed from the mask 30, the dimension of the substrate pressing projection 34 is the same as that of the opening 32. Since it is sufficiently smaller than the length L of one side, the photoelectric conversion possible region hardly changes.
  • the number of the substrate pressing protrusions 34 or the arrangement position along the peripheral edge is set in accordance with the scheduled film formation history of the film formation layer 13, so that the number of the notches 14 in the film formation layer 13 or The arrangement position along the peripheral edge corresponds to the film formation history of the film formation layer 13. Since the notch 14 formed in the film forming layer 13 is an identifiable mark, it can be used as a tracking mark for the film forming process state.
  • FIG. 5 is a diagram illustrating an example of the arrangement position and the number of notches in the film formation layer 13.
  • Figure 5 (a) (d) is an example of the upper side of the film formation layer 13 is provided a notch 14, in (a) is provided only notch 14 C, and the notch portion 14 C in (b) A notch 14 R is provided, (c) is provided with a notch 14 L and a notch 14 C , and (d) is provided with a notch 14 L , a notch 14 C, and a notch 14 R.
  • the four types of states can be distinguished by the presence or absence of the notch 14 L and the presence or absence of the notch 14 R. .
  • the four types can be distinguished using the first bit and the second bit.
  • four types of films i-type amorphous silicon layers 16 and 19, p-type amorphous silicon layer 17, n-type amorphous silicon layer 20, and transparent conductive films 18 and 21, are set in the first bit.
  • the first bit can be assigned to distinguish between two types of film forming apparatuses
  • the second bit can be assigned to distinguish the substrate arrangement in the film forming apparatus.
  • four types of film formation dates and times can be distinguished by using two of the first bit and the second bit.
  • FIGS. 5E to 5H are diagrams illustrating an example in which the notch portion 14 is provided on a side other than the upper side of the film formation layer 13.
  • notches 14 are provided on the upper side and lower side of the film-forming layer 13
  • (f) is provided with notches 14 on the upper side and the left side of the film-forming layer 13.
  • Cutouts 14 are provided on the upper left side of the film formation layer 13
  • cutouts 14 are provided on the upper side, lower side, left side, and right side of the film formation layer 13 in (h).
  • the substrate pressing projection 34 is provided at a position common to a plurality of thin film layers to be stacked, and the notch 14 is formed at a position common to the plurality of thin film layers stacked corresponding thereto.
  • the arrangement position of the substrate pressing projection 34 may be changed for each thin film, and the cutout portion 14 may be formed at a different position for each thin film correspondingly.
  • the overlapping of the substrate 12 and the mask 30 for pressing the substrate 12 with the mask 30 is ensured, the photoelectric conversion possible area is expanded,
  • the film forming history of the film forming process can be traced using the notch 14 of the film forming layer 13 corresponding to the substrate pressing protrusion 34.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

　L'invention concerne un élément de conversion photoélectrique (10), comprenant un substrat (12) et une couche de formation de film (13) déposée sur la surface du substrat (12), la couche de formation de film (13) ayant, sur une partie de bord périphérique, au moins une partie de découpe (14) sur laquelle on ne peut placer de dépôt. La couche de formation de film (13) est formée en utilisant un masque de formation de film d'élément de conversion photoélectrique ayant une ouverture définissant une région de formation de film et ayant au moins une saillie de maintien de substrat dépassant de la partie de bord périphérique de l'ouverture vers l'intérieur de l'ouverture. La partie de découpe (14) est formée au niveau d'une position du masque de formation de film d'élément de conversion photoélectrique correspondant à la position de la saillie de maintien de substrat.
PCT/JP2014/004208 2013-08-21 2014-08-18 Élément de conversion photoélectrique, et procédé de fabrication d'élément de conversion photoélectrique Ceased WO2015025510A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-171155 2013-08-21
JP2013171155 2013-08-21

Publications (1)

Publication Number Publication Date
WO2015025510A1 true WO2015025510A1 (fr) 2015-02-26

Family

ID=52483305

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/004208 Ceased WO2015025510A1 (fr) 2013-08-21 2014-08-18 Élément de conversion photoélectrique, et procédé de fabrication d'élément de conversion photoélectrique

Country Status (1)

Country Link
WO (1) WO2015025510A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015145944A1 (fr) * 2014-03-25 2015-10-01 パナソニックＩｐマネジメント株式会社 Élément de conversion photoélectrique et procédé de fabrication d'élément de conversion photoélectrique

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012104512A (ja) * 2010-11-05 2012-05-31 Sharp Corp 薄膜太陽電池モジュール及びその製造方法
WO2012090640A1 (fr) * 2010-12-29 2012-07-05 三洋電機株式会社 Cellule solaire, module de cellules solaires, et procédé de production d'un module de cellules solaires
JP2013118351A (ja) * 2011-10-31 2013-06-13 Mitsubishi Electric Corp 太陽電池の製造装置、太陽電池、及び太陽電池の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012104512A (ja) * 2010-11-05 2012-05-31 Sharp Corp 薄膜太陽電池モジュール及びその製造方法
WO2012090640A1 (fr) * 2010-12-29 2012-07-05 三洋電機株式会社 Cellule solaire, module de cellules solaires, et procédé de production d'un module de cellules solaires
JP2013118351A (ja) * 2011-10-31 2013-06-13 Mitsubishi Electric Corp 太陽電池の製造装置、太陽電池、及び太陽電池の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015145944A1 (fr) * 2014-03-25 2015-10-01 パナソニックＩｐマネジメント株式会社 Élément de conversion photoélectrique et procédé de fabrication d'élément de conversion photoélectrique

Similar Documents

Publication Publication Date Title
US9236505B2 (en) Solar cell and method for manufacturing the same
US20090151783A1 (en) Translucent solar cell and manufacturing method thereof
EP3018719B1 (fr) Cellule solaire et son procédé de fabrication
US10069022B2 (en) Solar cell and method for manufacturing same
KR101053790B1 (ko) 태양 전지 및 그 제조 방법
JP2018085509A (ja) 太陽電池及びその製造方法
JP6125594B2 (ja) 光電変換装置の作製方法
US20120264253A1 (en) Method of fabricating solar cell
CN102194900A (zh) 太阳能电池及其制造方法
US20100159633A1 (en) Method of manufacturing photovoltaic device
KR102387611B1 (ko) 태양 전지 및 이의 제조 방법
US9153725B2 (en) Solar cell and manufacturing method thereof
US20140048130A1 (en) Crystalline silicon solar cell water, and solar cell employing the same
WO2015025510A1 (fr) Élément de conversion photoélectrique, et procédé de fabrication d'élément de conversion photoélectrique
JP2014183073A (ja) 光電変換素子および光電変換素子の製造方法
TW202111459A (zh) 大型成膜基板及其製造方法、分割成膜基板及其製造方法、分割成膜基板之生產管理方法及生產管理系統
JPWO2011030729A1 (ja) 太陽電池モジュール
JP2010177655A (ja) 裏面接合型太陽電池の製造方法
JP2010080481A (ja) 受光素子および受光素子の作製方法
US20230121979A1 (en) Photovoltaic device and method for manufacturing the same
CN105428437A (zh) 光电组件及其制造方法
KR101480924B1 (ko) Mombe를 이용한 태양 전지의 제조 방법 및 이에 따른 태양 전지
US20110284056A1 (en) Solar cell having reduced leakage current and method of manufacturing the same
JP6726890B2 (ja) 太陽電池の製造方法、及び太陽電池
TWI718803B (zh) 電極結構與太陽電池結構

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14838132

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: JP

122 Ep: pct application non-entry in european phase

Ref document number: 14838132

Country of ref document: EP

Kind code of ref document: A1