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WO2012090640A1 - Cellule solaire, module de cellules solaires, et procédé de production d'un module de cellules solaires - Google Patents

Cellule solaire, module de cellules solaires, et procédé de production d'un module de cellules solaires Download PDF

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Publication number
WO2012090640A1
WO2012090640A1 PCT/JP2011/077768 JP2011077768W WO2012090640A1 WO 2012090640 A1 WO2012090640 A1 WO 2012090640A1 JP 2011077768 W JP2011077768 W JP 2011077768W WO 2012090640 A1 WO2012090640 A1 WO 2012090640A1
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WO
WIPO (PCT)
Prior art keywords
solar cell
mark
side electrode
type
light receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2011/077768
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English (en)
Japanese (ja)
Inventor
有二 菱田
三島　孝博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of WO2012090640A1 publication Critical patent/WO2012090640A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a back junction solar cell, a solar cell module including the solar cell, and a manufacturing method thereof.
  • Patent Document 1 proposes a so-called back junction type solar cell in which a p-type region and an n-type region are formed on the back surface side.
  • this back junction solar cell it is not always necessary to provide an electrode for collecting carriers on the light receiving surface. For this reason, in the back junction solar cell, the light receiving efficiency can be improved. Therefore, more improved photoelectric conversion efficiency can be realized.
  • the back junction solar cell has a p-type region and an n-type region formed on the back surface with high definition. For this reason, when manufacturing a back junction solar cell, it is necessary to form the p-type region and the n-type region after accurately detecting the position of the semiconductor substrate.
  • a direction for detecting the position of the semiconductor substrate for example, by detecting the position of the end surface of the semiconductor substrate, by detecting the position of the semiconductor substrate, or by detecting the position of the alignment mark formed on the semiconductor substrate
  • a method for detecting the position of the semiconductor substrate may be used.
  • the method of detecting the position of the semiconductor substrate by detecting the position of the alignment mark formed on the semiconductor substrate is particularly useful because it can detect the position of the semiconductor substrate with high accuracy. .
  • an alignment mark is generally formed on the back surface of a semiconductor substrate.
  • This invention is made
  • the objective is to provide the solar cell which has the photoelectric conversion efficiency improved in the back junction type solar cell which has marks, such as an alignment mark. is there.
  • the solar cell according to the present invention includes a solar cell substrate, a p-side electrode, an n-side electrode, and a mark.
  • the solar cell substrate has a light receiving surface and a back surface.
  • the p-type surface and the n-type surface are exposed on the back surface.
  • the p-side electrode is electrically connected to the p-type surface.
  • the n-side electrode is electrically connected to the n-type surface.
  • the mark is provided on a part of the light receiving surface.
  • the solar cell module according to the present invention includes a plurality of solar cells and a wiring material that electrically connects the plurality of solar cells.
  • the solar cell includes a solar cell substrate, a p-side electrode, an n-side electrode, and a mark.
  • the solar cell substrate has a light receiving surface and a back surface. The p-type surface and the n-type surface are exposed on the back surface.
  • the p-side electrode is electrically connected to the p-type surface.
  • the n-side electrode is electrically connected to the n-type surface.
  • the mark is provided on a part of the light receiving surface.
  • a method for manufacturing a solar cell module according to the present invention includes a plurality of solar cells and a wiring material that electrically connects the plurality of solar cells, the solar cell having a light receiving surface and a back surface, a solar cell substrate having an exposed p-type surface and an n-type surface; a p-side electrode electrically connected to the p-type surface; an n-side electrode electrically connected to the n-type surface;
  • the present invention relates to a method for manufacturing a solar cell module including a mark provided in part.
  • one side of the wiring member is electrically connected to the p-side electrode of the solar cell, and the other side is electrically connected to the n-side electrode of another solar cell.
  • a connecting step of electrically connecting a plurality of solar cells with the wiring material. In the connecting step, relative positioning of the solar cell with respect to the wiring material is performed using the mark.
  • a solar cell having improved photoelectric conversion efficiency can be provided in a back junction solar cell having a mark such as an alignment mark.
  • FIG. 1 is a schematic cross-sectional view of the solar cell module according to the first embodiment.
  • FIG. 2 is a schematic rear view of a part of the solar cell string in the first embodiment.
  • FIG. 3 is a schematic cross-sectional view taken along line III-III in FIG.
  • FIG. 4 is a schematic rear view of the solar cell in the first embodiment.
  • FIG. 5 is a schematic plan view of the solar cell in the first embodiment.
  • 6 is a schematic cross-sectional view taken along line VI-VI in FIG.
  • FIG. 7 is a schematic plan view of the solar cell in the second embodiment.
  • FIG. 8 is a schematic cross-sectional view of a solar cell in the third embodiment.
  • FIG. 1 is a schematic cross-sectional view of the solar cell module according to the first embodiment.
  • the solar cell module 2 includes one or a plurality of solar cell strings 3. Adjacent solar cell strings are electrically connected by connection wiring.
  • a protective member 5 is disposed on the light receiving surface side of the solar cell string 3.
  • a protective member 6 is disposed on the back side of the solar cell string 3.
  • a filler layer 7 is provided between the protective member 5 and the protective member 6. The solar cell string 3 is sealed by the filler layer 7.
  • the filler layer 7 can be formed of a light-transmitting resin such as ethylene / vinyl acetate copolymer (EVA) or polyvinyl butyral (PVB).
  • EVA ethylene / vinyl acetate copolymer
  • PVB polyvinyl butyral
  • the protective members 5 and 6 can be formed of glass, resin, or the like, for example. Moreover, the protection member 6 distribute
  • a metal frame such as Al may be attached to the outer periphery of the laminate having the protective members 5 and 6, the filler layer 7 and one or a plurality of solar cell strings 3.
  • a terminal box (not shown) for taking out the output of the solar cell 1 to the outside may be provided on the surface of the protective member 6 disposed on the back side.
  • the solar cell string 3 includes a plurality of solar cells 1 arranged along the x direction.
  • the plurality of solar cells 1 are electrically connected by the wiring material 4.
  • the electrical connection aspect of the some solar cell 1 by the wiring material 4 is explained in full detail behind.
  • FIG. 4 is a schematic rear view of the solar cell in the first embodiment.
  • FIG. 5 is a schematic plan view of the solar cell in the first embodiment.
  • 6 is a schematic cross-sectional view taken along line VI-VI in FIG.
  • the solar cell 1 is a so-called back junction type solar cell.
  • the solar cell 1 includes a solar cell substrate 10.
  • the solar cell substrate 10 has a light receiving surface 10a and a back surface 10b.
  • Solar cell substrate 10 has a p-type surface 10p and an n-type surface 10n exposed on back surface 10b.
  • the solar cell substrate 10 includes a crystalline semiconductor substrate 11 having one conductivity type.
  • the crystalline semiconductor substrate 11 has a light receiving surface 11a and a back surface 11b.
  • the light receiving surface 11 a of the crystalline semiconductor substrate 11 constitutes the light receiving surface 10 a of the solar cell substrate 10.
  • the crystalline semiconductor substrate 11 may have a p-type conductivity.
  • the crystalline semiconductor substrate 11 can be made of a crystalline semiconductor such as single crystal silicon or polycrystalline silicon.
  • a p-type amorphous semiconductor layer 12p and an n-type amorphous semiconductor layer 12n are disposed on the back surface of the crystalline semiconductor substrate 11.
  • the surface of the p-type amorphous semiconductor layer 12p constitutes a p-type surface 10p.
  • the n-type surface 10n is constituted by the surface of the n-type amorphous semiconductor layer 12n.
  • the back surface 10b of the solar cell substrate 10 is constituted by the surfaces of the p-type amorphous semiconductor layer 12p and the n-type amorphous semiconductor layer 12n and the exposed portion of the back surface 11b of the crystalline semiconductor substrate 11. Has been.
  • the p-type amorphous semiconductor layer 12p is arranged in a line at a predetermined interval.
  • the p-type amorphous semiconductor layer 12p can be formed of, for example, p-type amorphous silicon containing hydrogen.
  • the n-type amorphous semiconductor layers 12n are arranged in a line at a predetermined interval.
  • the p-type amorphous semiconductor layers 12p and the n-type amorphous semiconductor layers 12n are alternately arranged at a predetermined interval.
  • the n-type amorphous semiconductor layer 12n can be formed of, for example, n-type amorphous silicon containing hydrogen.
  • an i-type amorphous semiconductor layer that does not substantially contribute to power generation is disposed between the p-type amorphous semiconductor layer 12p and the n-type amorphous semiconductor layer 12n and the crystalline semiconductor substrate 11. May be.
  • the i-type amorphous semiconductor layer can be formed of i-type amorphous silicon containing hydrogen, for example.
  • a p-side electrode 13p is disposed on the p-type amorphous semiconductor layer 12p.
  • an n-side electrode 13n is disposed on the n-type amorphous semiconductor layer 12n.
  • the n-side electrode 13n is an electrode that collects electrons that are majority carriers.
  • the p-side electrode 13p is an electrode that collects holes that are minority carriers.
  • each of the p-side electrode 13p and the n-side electrode 13n is not particularly limited.
  • Each of the p-side electrode 13p and the n-side electrode 13n can be formed of, for example, a metal such as Ag, Cu, Au, Pt, Al, Sn, or Pd, or an alloy containing one or more of these metals.
  • each of the p-side electrode 13p and the n-side electrode 13n may be configured by a stacked body of a plurality of conductive films made of the above metals or alloys.
  • the formation method of the p-side electrode 13p and the n-side electrode 13n is not particularly limited.
  • Each of the p-side electrode 13p and the n-side electrode 13n may be formed, for example, by applying a resin-type conductive paste containing conductive particles made of metal, an alloy, or the like, or formed by plating. May be.
  • Each of the p-side electrode 13p and the n-side electrode 13n may be formed by a vapor deposition method, a sputtering method, or the like.
  • This mark 15 is an alignment mark used for position detection of the solar cell substrate 10 in the present embodiment.
  • the mark may be a mark other than the alignment mark.
  • the mark may be a product information mark.
  • a plurality of types of marks such as alignment marks and product information marks may be provided.
  • the “product information mark” is a mark that can identify some information related to the solar cell 1 such as a manufacturing date, a manufacturing line, a lot number, a type of a semiconductor substrate used, and a lot number.
  • the mark 15 is optically readable. Specifically, the mark 15 is constituted by a recess. In the present embodiment, in detail, the mark 15 is formed by two grooves that are formed by laser light irradiation and intersect each other. However, in the present invention, the mark is not limited to this configuration.
  • the mark may be constituted by, for example, a dot shape, a triangle shape, a quadrilateral shape, a polygonal shape, a circular shape, an elliptical shape, or an oval shaped concave portion, or may be constituted by numbers or characters. Further, the mark may be a barcode (registered trademark) or a QR code (registered trademark) constituted by a plurality of concave portions arranged in a matrix.
  • the depth of the mark 15 is preferably smaller than the thickness of the i-type amorphous semiconductor layer 16 and the n-type amorphous semiconductor layer 17 which are passivation films.
  • the marks 15 are arranged at the corners of the light receiving surface 11a of the semiconductor substrate 11.
  • the mark 15 is provided at a position that does not overlap with either the p-side electrode 13p or the n-side electrode 13n in plan view.
  • the position where the mark 15 is provided is not particularly limited, the outer peripheral region of the light receiving surface 11a of the semiconductor substrate 11 is preferable in appearance.
  • a stacked body of an i-type amorphous semiconductor layer 16, an n-type amorphous semiconductor layer 17, and a reflection suppressing layer 18 having a thickness that does not substantially contribute to power generation is formed on the light receiving surface 10a.
  • the mark 15 is covered with this laminate.
  • the i-type amorphous semiconductor layer 16 and the n-type amorphous semiconductor layer 17 function as so-called passivation layers that suppress carrier recombination.
  • the i-type amorphous semiconductor layer 16 preferably contains hydrogen.
  • the i-type amorphous semiconductor layer 16 can be formed of, for example, i-type amorphous silicon containing hydrogen.
  • the n-type amorphous semiconductor layer 17 can be formed of, for example, n-type amorphous silicon containing hydrogen.
  • the mark 15 is covered with at least a film having a passivation function.
  • the reflection suppression layer 18 has a function of suppressing reflection of light that is about to enter the light receiving surface 10a.
  • the antireflection layer 18 can be formed of, for example, silicon nitride, but is not limited thereto.
  • FIG. 2 is a schematic rear view of a part of the solar cell string in the first embodiment.
  • FIG. 3 is a schematic cross-sectional view taken along line III-III in FIG. Next, the electrical connection mode of the plurality of solar cells 1 by the wiring member 4 will be described in detail with reference to FIGS.
  • the wiring member 4 is a printed wiring board having an insulating wiring member body 4a and wirings 4b provided on the wiring member body 4a.
  • One end of the wiring 4b of the wiring member 4 is electrically connected to the p-side electrode 13p of one solar cell 1 of the solar cells 1 adjacent in the x direction.
  • the other end of the wiring 4b is electrically connected to the n-side electrode 13n of the other solar cell 1 of the solar cells 1 adjacent in the x direction.
  • the p-side electrode 13p and the n-side electrode 13n of the adjacent solar cells 1 are electrically connected, so that a plurality of solar cells are connected in series.
  • the wiring member 4 and the solar cell substrate 10 are bonded with an adhesive.
  • an adhesive solder or a resin adhesive can be used.
  • the resin adhesive may have an insulating property or an anisotropic conductivity.
  • the adhesion process of the wiring material 4 can be made easy by using the resin adhesive which has anisotropic conductivity as an adhesive agent.
  • the mark 15 is formed by irradiating the light receiving surface 11 a of the semiconductor substrate 11 with a laser beam. As described above, the mark 15 is composed of a depression having a dot shape or a linear shape.
  • a layer having a passivation function and a layer having a reflection suppressing function are formed on the light receiving surface 11a.
  • an i-type amorphous semiconductor layer 16 and an n-type amorphous semiconductor layer 17 are formed as layers having a passivation function.
  • a reflection suppression layer 18 is formed on the surface of the n-type amorphous semiconductor layer 17 as a layer having a reflection suppression function.
  • the solar cell substrate 10 is produced by appropriately forming the p-type amorphous semiconductor layer 12p and the n-type amorphous semiconductor layer 12n in a predetermined pattern on the surface of the back surface 10b.
  • An intrinsic thickness between the back surface 10b and the p-type amorphous semiconductor layer 12p and the n-type amorphous semiconductor layer 12n that does not substantially contribute to power generation for example, a thickness of several to 250 mm.
  • An amorphous semiconductor layer may be interposed. By doing so, the junction characteristics between the semiconductor substrate 11 and the p-type amorphous semiconductor layer 12p and the n-type amorphous semiconductor layer 12n can be improved.
  • the i-type amorphous semiconductor layer 16, the n-type amorphous semiconductor layer 17, the p-type amorphous semiconductor layer 12p, and the n-type amorphous semiconductor layer 12n are formed by, for example, a CVD method such as a plasma CVD method. Can be formed. Further, the reflection suppressing layer 18 can be formed by a method such as a sputtering method in addition to the CVD method.
  • the solar cell 1 is completed by forming the p-side electrode 13p and the n-side electrode 13n.
  • the p-side electrode 13p and the n-side electrode 13n can be formed by, for example, applying a conductive paste, plating, vapor deposition, sputtering, or the like.
  • a connection step of electrically connecting the plurality of solar cells 1 using the wiring material 4 is performed. Specifically, one side of the wiring 4b of the wiring member 4 is electrically connected to the p-side electrode 13p of the solar cell 1, and the other side is electrically connected to the n-side electrode 13n of the other solar cell 1. Thus, the solar cell 1 and the wiring material 4 are adhere
  • the solar cell string 3 is produced by repeating this bonding step.
  • the mark 15 is used to perform relative positioning with respect to the wiring material 4 of the solar cell 1. Specifically, the mark 15 of the solar cell 1 is recognized using an image recognition device such as a camera. Then, the current position of the solar cell 1 is detected based on the recognized position of the mark 15. And the solar cell 1 and the wiring material 4 are relatively positioned based on the positional information.
  • the first resin sheet for configuring the light receiving surface side portion of the filler layer 7, the solar cell string 3, and the back surface side portion of the filler layer 7 are configured.
  • the second resin sheet and the protective member 6 are laminated.
  • the solar cell module 2 can be completed by laminating the obtained laminate.
  • the photoelectric conversion efficiency is greatly reduced when the light receiving surface 11a is damaged.
  • the manufacturing process of the solar cell module 2 it is possible to hold the light receiving surface 11a facing down and the light receiving surface 11a facing up so that the light receiving surface 11a is not in contact with other members. preferable. Therefore, for example, when a mark is provided on the back surface, it is difficult to detect the mark in the manufacturing process of the solar cell module.
  • the mark 15 is provided on the light receiving surface 11a. For this reason, even if it is a case where the solar cell module 2 is manufactured in a state where the back surface 11b is arranged to face downward, the mark 15 can be easily detected in the manufacturing process of the solar cell module 2.
  • the relative position and orientation of the solar cell 1 and the wire 4b can be easily detected from the light receiving surface 11a side.
  • the mark includes a product information mark
  • the product information can be easily detected from the light receiving surface 11a side in the manufacturing process of the solar cell module 2.
  • the mark 15 can be optically read, the mark 15 can be easily detected using an imaging device such as a camera.
  • the light receiving surface 11a is covered with an amorphous semiconductor layer as a passivation film. For this reason, it can suppress that a recombination center generate
  • the i-type amorphous semiconductor layer 16 as the passivation film of the present embodiment is made of amorphous silicon containing hydrogen, generation of recombination centers can be more effectively suppressed, and improved photoelectric conversion efficiency can be achieved. can get.
  • the thickness of the passivation film thicker than the depth of the recess (dent) constituting the mark 15, it becomes easy to cover the entire surface of the recess with the passivation film. As a result, more improved photoelectric conversion efficiency can be obtained.
  • the mark 15 is provided at a position that does not overlap the p-side electrode 13p and the n-side electrode 13n in plan view. For this reason, even if a recombination center is generated in the semiconductor substrate 11 by the mark 15, the recombination center has little influence on carrier collection. Therefore, further improved photoelectric conversion efficiency can be obtained.
  • the passivation film is configured by the i-type amorphous semiconductor layer 16 made of amorphous silicon.
  • the passivation film is not limited to one made of amorphous silicon.
  • the passivation film may be made of silicon nitride or silicon oxide. Even in that case, improved photoelectric conversion efficiency can be obtained similarly.
  • FIG. 7 is a schematic plan view of the solar cell in the second embodiment.
  • each of the p-side electrode 13p and the n-side electrode 13n is a so-called busbarless electrode configured by only a plurality of finger electrode portions extending in the x direction has been described.
  • the present invention is not limited to this configuration.
  • each of the p-side electrode 13p and the n-side electrode 13n includes a plurality of finger electrode portions 13p2 and 13n2 and a plurality of finger electrode portions 13p2 and 13n2 extending in parallel with each other along the x direction. May be electrically connected and may include bus bar portions 13p1 and 13n1 extending along the y direction.
  • the mark 15 may be arranged so as not to overlap the p-side electrode 13p and the n-side electrode 13n in plan view.
  • the n-side electrode 13n is arranged. It is arranged so as to overlap with the bus bar portion 13n1.
  • the bus bar portion 13n1 is an electrode portion that collects majority carriers in the present embodiment, if it is a portion on the bus bar portion 13n1 of the solar cell substrate 10, the photoelectric conversion efficiency is unlikely to decrease even if a recombination center occurs. Therefore, a decrease in photoelectric conversion efficiency due to the mark 15 can be suppressed.
  • FIG. 8 is a schematic cross-sectional view of a solar cell in the third embodiment.
  • the present invention is not limited to this configuration.
  • a p-type dopant diffusion region 11p in which a p-type dopant is diffused and an n-type dopant diffusion region 11n in which an n-type dopant is diffused are exposed on the surface.
  • the solar cell substrate 10 may be constituted by the semiconductor substrate 11 that is provided. Even in this case, the same effect as the first embodiment can be obtained.

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une cellule solaire de type jonction de surface arrière avec une marque de type marque d'alignement et dont le rendement de conversion photoélectrique est amélioré.　La cellule solaire (1) a une surface recevant la lumière (11a), une surface arrière (11b), un substrat de cellule solaire (10) avec une surface de type p (10p) et une surface de type n (10n) exposé à la surface arrière (11b), une électrode du côté p(13p) électriquement connectée à la surface de type p(10p), et une électrode du côté n (13n) électriquement connectée à la surface de type n (10n), et elle comprend une marque (15) qui est disposée sur une partie de la surface recevant la lumière (11a).
PCT/JP2011/077768 2010-12-29 2011-12-01 Cellule solaire, module de cellules solaires, et procédé de production d'un module de cellules solaires Ceased WO2012090640A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-294549 2010-12-29
JP2010294549A JP2012142456A (ja) 2010-12-29 2010-12-29 太陽電池、太陽電池モジュール及び太陽電池モジュールの製造方法

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WO2012090640A1 true WO2012090640A1 (fr) 2012-07-05

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Cited By (1)

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WO2015025510A1 (fr) * 2013-08-21 2015-02-26 三洋電機株式会社 Élément de conversion photoélectrique, et procédé de fabrication d'élément de conversion photoélectrique

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Publication number Priority date Publication date Assignee Title
DE112012006899T5 (de) 2012-09-13 2015-05-28 Sanyo Electric Co., Ltd. Solarzellenmodul

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JP2004047776A (ja) * 2002-07-12 2004-02-12 Honda Motor Co Ltd 太陽電池セルおよびその製造方法
WO2009060753A1 (fr) * 2007-11-09 2009-05-14 Sharp Kabushiki Kaisha Module de pile solaire et procédé de fabrication de module de pile solaire
WO2009096114A1 (fr) * 2008-01-31 2009-08-06 Sharp Kabushiki Kaisha Procede de fabrication de module de batterie solaire
WO2010021204A1 (fr) * 2008-08-22 2010-02-25 三洋電機株式会社 Module de cellule solaire, cellule solaire et procédé de fabrication de module de cellule solaire

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004047776A (ja) * 2002-07-12 2004-02-12 Honda Motor Co Ltd 太陽電池セルおよびその製造方法
WO2009060753A1 (fr) * 2007-11-09 2009-05-14 Sharp Kabushiki Kaisha Module de pile solaire et procédé de fabrication de module de pile solaire
WO2009096114A1 (fr) * 2008-01-31 2009-08-06 Sharp Kabushiki Kaisha Procede de fabrication de module de batterie solaire
WO2010021204A1 (fr) * 2008-08-22 2010-02-25 三洋電機株式会社 Module de cellule solaire, cellule solaire et procédé de fabrication de module de cellule solaire

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015025510A1 (fr) * 2013-08-21 2015-02-26 三洋電機株式会社 Élément de conversion photoélectrique, et procédé de fabrication d'élément de conversion photoélectrique

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