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WO2015018155A1 - 制备显示装置的方法 - Google Patents

制备显示装置的方法 Download PDF

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Publication number
WO2015018155A1
WO2015018155A1 PCT/CN2013/089143 CN2013089143W WO2015018155A1 WO 2015018155 A1 WO2015018155 A1 WO 2015018155A1 CN 2013089143 W CN2013089143 W CN 2013089143W WO 2015018155 A1 WO2015018155 A1 WO 2015018155A1
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WO
WIPO (PCT)
Prior art keywords
substrate
radiation
polyimide film
film
sealant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2013/089143
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English (en)
French (fr)
Inventor
李建
张伟
李鸿鹏
宋省勋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing BOE Optoelectronics Technology Co Ltd
Original Assignee
Beijing BOE Optoelectronics Technology Co Ltd
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Filing date
Publication date
Application filed by Beijing BOE Optoelectronics Technology Co Ltd filed Critical Beijing BOE Optoelectronics Technology Co Ltd
Publication of WO2015018155A1 publication Critical patent/WO2015018155A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303Apparatus specially adapted to the manufacture of LCDs
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • G02F1/13398Spacer materials; Spacer properties
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/02Materials and properties organic material
    • G02F2202/022Materials and properties organic material polymeric
    • G02F2202/023Materials and properties organic material polymeric curable

Definitions

  • Embodiments of the present invention relate to the field of display technology, and in particular, to a method of fabricating a display device, particularly a narrow bezel display device. Background technique
  • LCDs Liquid crystal displays
  • the narrow bezel design of the display device is a trend in the field of display.
  • the narrow bezel design method of LCD (TFT-LCD) display products is mostly realized by overlapping polyimide film (PI film) and sealing frame glue.
  • PI film polyimide film
  • sealing frame glue due to the poor adhesion between the PI film and the sealant, it is easy to cause defects in reliability, such as weak adhesion, residual image problems due to contamination due to poor compatibility, resulting in The uncontrollable factors of PI film and frame sealant make it difficult to achieve the ideal product design requirements for narrow frames.
  • the narrow bezel design that does not overlap the PI film and the frame sealant, although it avoids the above problems, the method does not maximize the narrow bezel.
  • the overlap of the PI film and the sealant is an optimal solution, so improving the adhesion of the PI film to the sealant is an urgent problem to be solved.
  • a commonly used method for realizing a narrow bezel is to directly apply a sealant on the PI film and form a seal after curing.
  • the sealing strength obtained by this method is poor, and problems such as penetration of liquid crystal, precipitation of contaminants, and poor reliability are liable to occur.
  • Embodiments of the present invention are directed to a method of preparing a display device capable of achieving strong bonding between a sealant and a PI film by means of radiation modification without changing the design of the display device. Sex.
  • the method according to the embodiment of the present invention can effectively form a display device having a narrow frame of 6 to 11 mm by overlapping the PI film and the sealant, and can prevent problems such as puncture of liquid crystal, precipitation of contaminants, and poor reliability.
  • Embodiments of the present invention provide a method of preparing a display device, the method comprising: radiation treatment
  • the polyimide film located at the sealing position of the substrate causes the polyimide film located at the sealing position of the substrate to generate radicals; and the sealant is coated at the sealing position and cured.
  • the polyimide film may have a first reactive group selected from the group consisting of -COO-, -OH, and -NH 2 , and preferably may have -COO- on the branch.
  • Sealant may be selected from -COOH, -OH and -NH 2 in a second reactive group.
  • the radiation treatment can be performed using a radiation source that emits linear ultraviolet light.
  • the radiation source can be irradiated to the sealing position of the substrate by the radiant hood.
  • the light-transmitting portion of the radiant hood can be aligned with the sealing position of the substrate.
  • the linear ultraviolet light may have a wavelength of 254 nm and/or 313 nm.
  • the linear ultraviolet light may have a intensity of 1.0 to 4.0 J/cm 2 .
  • the first reactive group may undergo a cleavage reaction after being subjected to a radiation treatment to generate a radical.
  • the free radicals can form a chemical bond with the second reactive group of the sealer.
  • the substrate may be an array substrate or a color filter substrate.
  • the method may further comprise: orienting the polyimide film prior to performing the radiation treatment step.
  • the surface layer of the PI film in the sealant coating region is subjected to radiation modification, and the radical generated by the cracking and the active group of the sealant are encapsulated.
  • the group can achieve good wettability and adsorption before curing, and chemical bonding of PI film-encapsulated gel during curing.
  • the internal bonding force of the molecule is much larger than the intermolecular force, thus realizing the polyamid.
  • the bond strength between the amine film and the sealant is enhanced.
  • FIG. 1 is a schematic view showing an overlap of a polyimide film and a sealant of a display device according to an embodiment of the present invention
  • FIG. 2 is a schematic structural view of a radiant hood used in a method according to an embodiment of the present invention
  • FIG. 3 is a schematic view showing radiation modification of a polyimide film according to an embodiment of the present invention.
  • Embodiments of the present invention provide a method of preparing a display device, the method comprising: irradiating a polyimide film located at a sealing position of a substrate to freely form a polyimide film located at a sealing position of the substrate Then, the sealant is coated at the sealing position and cured, and the radical of the polyimide film reacts with the active group of the sealant to make the polyimide film and the sealant A strong bond is produced between them.
  • FIG. 1 shows a narrow bezel display panel prepared by overlapping a PI film and a sealant in accordance with an embodiment of the present invention, wherein there is no distance constraint between the PI film and the sealant, which can effectively reduce the frame area.
  • the substrate may be a substrate on which an array pattern or a color film pattern is formed on, for example, a glass substrate or a plastic substrate having good transparency and stability, that is, an array substrate or a color filter substrate.
  • the oriented substrate « is placed on the stage.
  • the stage can be placed in the radiation chamber.
  • the radiation chamber can be evacuated or filled with an inert gas.
  • a radiant hood for defining a radiant area may be disposed above the stage.
  • the radiant hood can be a shading material having a specific light transmissive area commonly used in the art.
  • the light shielding portion 1 of the radiant hood may be a metal plate, or an opaque plastic plate, or any other covering that blocks the radiation of the radiation source.
  • the light transmitting portion 2 of the radiant hood may be a material that transmits radiation emitted from a radiation source, such as glass, transparent plastic, or the like.
  • the stage can be rotated such that the substrate to be irradiated is at a position corresponding to the radiant hood, that is, the light-transmitting portion 2 corresponds to the sealing position of the substrate, and the light-shielding portion 1 corresponds to the pattern area of the substrate.
  • the substrate to be irradiated can then be fixed.
  • the distance between the radiant hood and the substrate to be irradiated can be adjusted and aligned so that the sealing position of the substrate is aligned with the light transmitting position of the radiant hood.
  • the alignment process can generally include coarse alignment prior to dropping the radiant hood to a certain position, followed by fine alignment. Then, the degree of alignment can be detected using an electron microscope and fine-tuned.
  • Figure 3 is a schematic view showing radiation modification of a polyimide film, wherein the radiation in the hood
  • the effective area (i.e., the area of each light transmitting portion) Wl, W2, W3 may have the following relationship with the area to be irradiated W, l, W, 2, W, 3 of the PI film: W1 > W, 1 , W2 > W2 , W3 > W, 3.
  • the side reflectors may be located at both ends of the radiation source to reflect radiation emitted laterally from the radiation source, thereby ensuring radiation modification of the end side of the substrate.
  • the distance between the radiant hood and the substrate to be irradiated may be preset as needed, and may be specifically set according to the composition of the PI film and the area of the radiant area of the PI film. If the radiation area of the PI film is large, the distance between the radiant hood and the substrate can be set to be small; if the radiation area of the PI film is small, the distance between the radiant hood and the substrate can be set. It is larger.
  • the radiation source can control the radiation area of the PI film by the angular range of its movement.
  • Radiation sources can emit electromagnetic waves of various wavelengths, such as visible light, ultraviolet light, X-rays, gamma rays, and lasers of different wavelengths, alpha rays, beta rays, and neutron rays.
  • the number of radiation sources can be one or more and can be adjusted according to actual needs.
  • the source of radiation may be a device that produces linear ultraviolet light.
  • the trajectory of the radiation source may be a horizontal motion range at both ends of the substrate, and the horizontal motion speed may be 20 to 50 mm/s.
  • the radiation source can also be centered on the vertical direction -30. ⁇ 30.
  • the sport can have an angular velocity of 0-30. /s.
  • the intensity of the linear ultraviolet light can be set according to the composition of the PI film, and may be, for example, 1.0 to 4.0 J/cm 2 (for a wavelength of 254 nm) or 1.0 to 4.0 J/cm 2 (for a wavelength of 313 nm).
  • the polyimide film may have a first reactive group selected from the group consisting of -COO-, -OH, and -NH 2 , and preferably has -COO- on the branch.
  • the above-mentioned first reactive group may undergo a cleavage reaction by radiation treatment of the above-mentioned radiation source to generate a radical.
  • Sealant may be selected from -COOH, -OH and -NH 2 in a second reactive group.
  • the radiation source is returned to the position, the radiant hood is raised back to the initial position, and the irradiated substrate is taken out of the radiation chamber.
  • the sealant is then applied to the sealed position of the irradiated substrate and cured, for example, by UV curing or heat curing.
  • the second reactive group and the radical generated by the first reactive group can have good wettability and can form intramolecular chemical bonding. Thus, good bonding properties can be obtained.
  • the following cleavage reaction can occur at the time of radiation treatment:
  • the surface group of the PI film is cleaved by a radiation reaction to form a radical, which can be combined with the active group of the sealant, thereby increasing the gap between the sealant and the PI film.
  • the bonding strength avoids the occurrence of liquid crystal puncture, liquid crystal contamination, and poor reliability.
  • the PI liquid (polyamide AL-00010) is used as an example for radiation modification.
  • the above PI liquid may be coated on an array substrate to form a PI film by a conventional method in the art, and subjected to rubbing alignment treatment.
  • the oriented array substrate is placed on a stage in the radiation chamber. The stage is rotated, and the position of the radiant hood is adjusted so that the portion to be irradiated (sealed position) of the array substrate is aligned with the light transmitting portion of the radiant hood.
  • the radiation source can be an ultraviolet lamp, and the linear ultraviolet light emitted has a wavelength of 254 nm and the radiation intensity is
  • the active group in the structure ie, the ester group on the branch indicated by the arrow
  • the active group in the structure is mainly cleaved in the cleavage mode 1 to form the radical derivative 1, and a small amount is conventionally
  • the cleavage mode 2 is cleaved to form a free radical derivative 2.
  • An acrylate frame sealant (for example, WB73) is coated on the sealing position of the above-mentioned radiation-treated array substrate, and subjected to a conventional process of box-up, ultraviolet curing, and the like to obtain a liquid crystal display device. During the curing process, a sub-bonding process can occur between the radiation-modified PI film and the sealant:
  • the PI film on the color filter substrate can be irradiated, and the good sealing between the PI film and the sealant on the color film substrate can be achieved.
  • conventional processes such as boxing and curing, it is possible to produce a display device with better reliability and stability.
  • a glass substrate having a thickness of 0.4T (0.4mm) was used, the PI liquid was polyimide AL-00010, the sealant was WB-73, and the rubber width was 0.7 mm.
  • the radiation treated PI film and the seal were formed by the method of the above examples.
  • the sealing structure of the sealant is compared with the sealed structure of the non-radiation-treated PI film and the sealant.
  • the 4.5 inch peel off data of the obtained sealing structure was tested. If the average peeling force of the left bonding pad (pad) and the right bonding pad (pad) were both greater than 1.25 kgf, the bonding strength was considered to be Qualified (OK), otherwise the bond strength is considered to be unacceptable (NG).
  • the radiation-treated sealing method can obtain a significantly enhanced bonding strength.
  • the above is only the exemplary embodiments of the present invention, and is not intended to limit the scope of the present invention.
  • the scope of the present invention is defined by the claims and their equivalents.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)

Abstract

一种制备显示装置的方法,包括:辐射处理位于基板的封合位置处的聚酰亚胺膜,使位于基板的封合位置处的聚酰亚胺膜产生自由基;以及将封框胶涂覆在封合位置处,并进行固化。通过对聚酰亚胺膜进行辐射处理,使聚酰亚胺膜的表面基团发生裂解反应生成自由基,自由基可以与封框胶的活性基团相互反应,从而增大粘结强度,避免液晶穿刺、液晶污染、可靠性差等问题的发生。

Description

制备显示装置的方法 技术领域
本发明的实施例涉及显示技术领域,具体地,涉及一种制备显示装置(尤 其是窄边框显示装置) 的方法。 背景技术
液晶显示器(LCD ) 因其体积小、 功耗低、 无辐射等特点已成为目前平 板显示器中的主流产品, 并且对其纤薄、 轻质的要求日益增强。
显示装置的窄边框设计是显示领域发展的一个趋势。 目前薄膜晶体管
LCD ( TFT-LCD )显示产品的窄边框设计方法大多采用聚酰亚胺膜(PI膜) 与封框胶重叠的方式来实现。但是, 由于 PI膜和封框胶之间具有较差的粘结 性, 容易产生可靠性方面的不良, 如粘结力弱、 因相容性差导致的污染析出 物而产生的残像问题,使得由 PI膜与封框胶的不可控制的因素导致窄边框难 以达到理想产品的设计要求。对于采用 PI膜与封框胶不重叠的方式的窄边框 设计, 虽然其避免了上述问题, 但是该方法不能最大限度地实现窄边框。 为 了最大限度地实现窄边框, PI膜与封框胶重叠是一个最佳的解决方案, 因而 改善 PI膜与封框胶的粘结性是一个急需解决的问题。
当前通常采用的实现窄边框的方法是直接在 PI膜上重叠地涂覆封框胶, 经固化后形成封合。 但采用这种方法获得的封合强度差, 容易出现液晶的穿 刺、 污染物的析出、 可靠性不良等问题。 发明内容
本发明的实施例旨在提供一种制备显示装置的方法, 该方法能够在不变 动显示装置的设计的基础上利用辐射改性的方式在封框胶和 PI膜之间实现 较强的粘结性。根据本发明实施例的方法能够有效地利用 PI膜与封框胶重叠 的方式制备具有 6~llmm的窄边框的显示装置, 并能够防止液晶的穿刺、 污 染物的析出、 可靠性不良等问题。
本发明的实施例提供一种制备显示装置的方法, 该方法包括: 辐射处理 位于基板的封合位置处的聚酰亚胺膜, 使位于基板的封合位置处的聚酰亚胺 膜产生自由基; 以及将封框胶涂覆在封合位置处, 并进行固化。
聚酰亚胺膜可以具有选自 -COO-、 -OH和 -NH2的第一活性基团,优选地, 可以具有位于支链上的 -COO-。
封框胶可以具有选自 -COOH、 -OH和 -NH2的第二活性基团。
在实施例中, 辐射处理可以使用发射线性紫外光的辐射源来进行。 辐射 源可以通过辐射遮光罩对基板的封合位置进行辐射处理。 通过调节辐射遮光 罩与基板之间的距离,可以使辐射遮光罩的透光部分与基板的封合位置对准。
优选地, 线性紫外光的波长可以为 254nm和 /或 313nm。
可选地, 线性紫外光的强度可以为 1.0~4.0J/cm2
第一活性基团可以在经受辐射处理后发生裂解反应而产生自由基。 在进 行固化步骤时, 自由基可以与封框胶的第二活性基团形成化学键合。
基板可以为阵列基板或彩膜基板。
该方法还可以包括: 在进行辐射处理步骤之前, 对聚酰亚胺膜进行取向 处理。
在本发明实施例提供的制备显示装置的方法中, 对封框胶涂覆区域(封 合位置)内的 PI膜表层分子进行辐射改性,其裂解产生的自由基与封框胶的 活性基团既能在固化前达到良好的浸润性和吸附性, 又能在固化时发生 PI 膜-封框胶的化学键合, 其产生的分子内部键合力远大于分子间作用力,从而 实现聚酰亚胺膜与封框胶之间粘结强度的增强。 通过上述方法, 能够制备具 有 6~llmm的窄边框的显示装置, 并能够保证其良好的显示性能和稳定性。 附图说明
图 1为根据本发明实施例的显示装置的聚酰亚胺膜与封框胶重叠的示意 图;
图 2为根据本发明实施例的方法中所用的辐射遮光罩的结构示意图; 图 3为根据本发明实施例的对聚酰亚胺膜进行辐射改性的示意图。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚, 下面将结合本发 明实施例的附图,对本发明实施例的技术方案进行清楚、 完整地描述。显然, 所描述的实施例是本发明的一部分实施例, 而不是全部的实施例。 基于所描 述的本发明的实施例, 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例, 都属于本发明保护的范围。
本发明的实施例提供一种制备显示装置的方法, 该方法包括: 辐射处理 位于基板的封合位置处的聚酰亚胺膜, 使位于基板的封合位置处的聚酰亚胺 膜产生自由基; 接着将封框胶涂覆在封合位置处, 并进行固化, 此时聚酰亚 胺膜的自由基与封框胶的活性基团发生反应, 使得聚酰亚胺膜与封框胶之间 产生较强的粘结力。
图 1示出了根据本发明实施例的方法采用 PI膜与封框胶重叠的方式制得 的窄边框显示面板,其中 PI膜与封框胶之间没有距离约束,可以有效降低边 框面积。
在根据本发明实施例的方法中, 上述基板可以为在例如玻璃基板或具有 良好透明性和稳定性的塑料基板上形成有阵列图形或彩膜图形的基板, 即阵 列基板或彩膜基板。
在上述方法中, 利用常规的取向方法(例如, 摩擦处理)使涂覆在基板 上的聚酰亚胺膜取向后, 将经取向处理的基«置于载物台上。 载物台可以 置于辐射腔内。 该辐射腔可以被抽真空或者充入惰性气体。
在载物台上方可以布置有用于限定辐射区域的辐射遮光罩。 辐射遮光罩 可以为本领域常用的具有特定透光区域的遮光材料。 如图 2所示, 辐射遮光 罩的遮光部分 1可以是金属板, 或者不透明的塑料板, 或者其他任何可以遮 挡辐射源的辐射的遮挡物。 辐射遮光罩的透光部分 2可以是能透过辐射源所 发射的射线的材料, 如玻璃、 透明塑料等。
可以旋转载物台使得待辐射处理的基板处于与辐射遮光罩相对应的位 置, 也就是让透光部分 2与基板的封合位置相对应, 遮光部分 1与基板的图 形区域相对应。 然后可以固定待辐射处理的基板。
接下来, 可以调节辐射遮光罩与待辐射处理的基板之间的距离, 并对它 们进行对准使得基板的封合位置与辐射遮光罩的透光位置对准。 该对准过程 通常可以包括在使辐射遮光罩下降至一定位置后先进行粗略对准, 之后再进 行精细对准。 然后, 可以使用电子显微镜检测对准程度并进行微调。
图 3示出对聚酰亚胺膜进行辐射改性的示意图, 其中辐射遮光罩中的辐 射有效面积(即, 各个透光部分的面积) Wl、 W2、 W3可以与 PI膜的待辐 射面积 W,l、 W,2、 W,3具有如下关系: W1 > W,1 , W2 > W2, W3 > W,3。
侧面反射板可以位于辐射源的两端以对辐射源向侧面发射的射线进行反 射, 从而可以确保对基板的端侧进行辐射改性。
在上述方法中, 辐射遮光罩与待辐射处理的基板之间的距离可以根据需 要进行预先设定, 具体可以根据 PI膜的组成成分以及 PI膜的辐射区域面积 来设定。若 PI膜的辐射区域面积较大, 则可以将辐射遮光罩与基板之间的距 离设置为较小; 若 PI膜的辐射区域面积较小, 则可以将辐射遮光罩与基板之 间的距离设置为较大。
辐射源可以通过其移动的角度量程来控制 PI膜的辐射区域。辐射源可以 发射各种波长的电磁波, 例如可见光、 紫外线、 X射线、 γ射线以及不同波 长的激光, α射线、 β射线以及中子射线等。 辐射源的数目可以为一个或者 多个, 并可以根据实际需要来调整。
优选地, 辐射源可以为产生线性紫外光的装置。 辐射源的运动轨迹可以 为以基板的两端为水平运动范围, 水平运动速度可以为 20~50mm/s。 同时辐 射源还可以以竖直方向为中心线进行 -30。~30。的运动,角速度可以为 0-30。/s。
线性紫外光的强度可以根据 PI膜的成分来设定,例如可以为 1.0~4.0J/cm2 (对于 254nm的波长 ), 或者 1.0~4.0J/cm2 (对于 313nm的波长)。
聚酰亚胺膜可以具有选自 -COO-、 -OH和 -NH2的第一活性基团, 优选地 具有位于支链上的 -COO-。 上述第一活性基团经过上述辐射源的辐射处理可 以发生裂解反应, 从而生成自由基。
封框胶可以具有选自 -COOH、 -OH和 -NH2的第二活性基团。
在辐射处理完毕后,将辐射源归复原位,辐射遮光罩上升回到初始位置, 并将经过辐射处理的基板从辐射腔取出。
然后,将封框胶涂覆在经过辐射处理的基板的封合位置上,并进行对盒、 固化(例如, UV固化或热固化)。 此时, 第二活性基团与由第一活性基团产 生的自由基可以具有良好的浸润性能,并能够形成分子内的化学键合。 因而, 可以获得良好的粘结性能。
例如, 当聚酰亚胺膜的侧链含有酯基时, 在辐射处理时可以发生如下的 裂解反应:
-COO——揭射 ► -CO + 0 在 uv固化或者热固化时,所生成的自由基容易与第二活性基团(例如, -COOH )发生键合, 从而实现封框胶与 PI膜之间的高强度结合, 并防止液 晶的穿刺及污染物的析出。
采用上述方法进行封合的显示装置可以实现如下的技术和经济效果:
( 1 )通过辐射反应, 使 PI膜的表面基团发生裂解反应以形成自由基, 该自由基可以与封框胶的活性基团相互结合,从而增大了封框胶与 PI膜之间 的粘结强度, 避免了液晶穿刺、 液晶污染、 可靠性较差的情况发生。
( 2 ) 由于封框胶仅涂覆在 PI层的封合位置处, 所以与传统方式相比减 少了封框胶的使用量, 并且不会降低粘结强度, 不影响显示装置的可靠性。
( 3 )无需变动显示装置的设计, 减少了开发费用, 仅从制造工艺上进行 变动, 同时其所使用的设备与目前 UV固化的设备具有较大的匹配性, 减少 了设备改造上的投入, 具有较高的性价比。 实施例
这里以 PI液( polyimide AL-00010 )为例对其进行辐射改性。
可以采用本领域常规方法将上述 PI液涂覆在阵列基板上形成 PI膜, 并 对其进行摩擦取向处理。 将经过取向处理的阵列基板置于辐射腔内的载物台 上。 旋转载物台, 并调节辐射遮光罩的位置, 使得阵列基板的待辐射处理部 分(封合位置)与辐射遮光罩的透光部分对准。
辐射源可以为紫外灯, 发出的线性紫外光的波长为 254nm, 辐射强度为
1.0 J/cm2
上述 PI膜的辐射改性过程如以下示意式所示:
Figure imgf000007_0001
Figure imgf000007_0002
a. PI膜的支链上酯基的裂解反应
PI膜经辐射改性后, 其结构内的活性基团 (即, 箭头所指的位于支链上 的酯基)主要以裂解方式 1发生裂解, 生成自由基衍生物 1, 同时也有少量 按常规的裂解方式 2发生裂解, 生成自由基衍生物 2。
将丙烯酸酯封框胶(以 WB73为例)涂覆在上述经过辐射处理的阵列基 板的封合位置处, 并与彩膜基板进行常规的对盒、 紫外固化等工艺, 制得液 晶显示装置。在固化过程中, 经过辐射改性的 PI膜与封框胶之间可以发生如 下键合过程:
Figure imgf000007_0003
b.封框胶的固化过程
换页 (^ 笫 2 5奈)
Figure imgf000008_0001
c. PI膜改性后的表面分子与封框胶发生的键合 (以衍生物 1为例) 通过上述方法 , PI膜与封框胶不再是以传统的以分子间作用力为主的方 式粘结, 而是转化为依靠化学键的键合力来粘结。 因此, PI膜与封框胶之间 的粘结作用发生明显增强。
采用以上相同方法, 可以对彩膜基板上的 PI膜进行辐射处理, 同样能实 现彩膜基板上的 PI膜与封框胶之间的良好封合。经过常规的对盒和固化等工 艺, 可以制得可靠性、 稳定性更好的显示装置。
粘结强度的评价
采用厚度为 0.4T ( 0.4mm ) 的玻璃基板, PI液为 polyimide AL-00010, 封框胶为 WB-73, 胶宽为 0.7mm, 采用以上实施例的方法形成经过辐射处理 的 PI膜与封框胶的封合结构, 并将未经辐射处理的 PI膜与封框胶的封合结 构作为对比。 对所得的封合结构的 4.5英寸的剥离 (peel off)数据进行测试, 如果左边粘结部 (pad )和右边粘结部(pad ) 的平均剥离力都大于 1.25kgf, 则认为粘接强度为合格(OK ), 否则认为粘接强度为不合格(NG )。
Figure imgf000008_0002
由以上结果可以看出, 经过辐射处理的封合方法, 能够获得明显增强的 粘结强度。 以上所述仅是本发明的示范性实施方式, 而非用于限制本发明的 保护范围, 本发明的保护范围由权利要求及其等同物限定。
替换页 ( 26奈)

Claims

权利要求书
1、 一种制备显示装置的方法, 包括:
辐射处理位于基板的封合位置处的聚酰亚胺膜, 使位于所述基板的封合 位置处的所述聚酰亚胺膜产生自由基;
将封框胶涂覆在所述封合位置处, 并进行固化。
2、 根据权利要求 1所述的方法, 其中所述聚酰亚胺膜具有选自 -COO-、 -OH和 -NH2的第一活性基团。
3、 根据权利要求 1-2 中任一项所述的方法, 其中所述封框胶具有选自 -COOH、 -OH和 -NH2的第二活性基团。
4、根据权利要求 1-3中任一项所述的方法, 其中所述聚酰亚胺膜具有位 于支链上的 -COO-。
5、根据权利要求 1-4中任一项所述的方法, 其中所述辐射处理采用发射 线性紫外光的辐射源进行。
6、 根据权利要求 5所述的方法, 其中所述线性紫外光的波长为 254nm、 或 313nm、 或 254nm和 313nm。
7、 根据权利要求 5 或 6 所述的方法, 其中所述线性紫外光的强度为 1.0~4.0 J/cm2
8、根据权利要求 2所述的方法,其中所述第一活性基团经辐射后产生自 由基。
9、根据权利要求 8所述的方法, 其中在进行所述固化步骤时, 所述自由 基与所述封框胶的第二活性基团形成化学键合。
10、 根据权利要求 1-9中任一项所述的方法, 其中所述基板为阵列基板 或彩膜基板。
11、 根据权利要求 1-10中任一项所述的方法, 还包括: 在进行所述辐射 处理步骤之前, 对所述聚酰亚胺膜进行取向处理。
12、 根据权利要求 5所述的方法, 其中所述辐射源通过辐射遮光罩对所 述基板的封合位置进行辐射处理。
13、根据权利要求 12所述的方法,其中通过调节所述辐射遮光罩与所述 基板之间的距离, 使得所述辐射遮光罩的透光部分与所述基板的封合位置对 准。
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