[go: up one dir, main page]

WO2015083345A1 - Wiring board with embedded components and manufacturing method thereof - Google Patents

Wiring board with embedded components and manufacturing method thereof Download PDF

Info

Publication number
WO2015083345A1
WO2015083345A1 PCT/JP2014/005904 JP2014005904W WO2015083345A1 WO 2015083345 A1 WO2015083345 A1 WO 2015083345A1 JP 2014005904 W JP2014005904 W JP 2014005904W WO 2015083345 A1 WO2015083345 A1 WO 2015083345A1
Authority
WO
WIPO (PCT)
Prior art keywords
core
back surface
layer
component
conductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2014/005904
Other languages
French (fr)
Japanese (ja)
Inventor
山下 大輔
小林 照幸
拓弥 鳥居
真宏 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Niterra Co Ltd
Original Assignee
NGK Spark Plug Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2013251448A external-priority patent/JP2015109346A/en
Priority claimed from JP2014012845A external-priority patent/JP2015141953A/en
Application filed by NGK Spark Plug Co Ltd filed Critical NGK Spark Plug Co Ltd
Priority to TW103141892A priority Critical patent/TW201536130A/en
Publication of WO2015083345A1 publication Critical patent/WO2015083345A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/182Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0216Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/023Reduction of cross-talk, noise or electromagnetic interference using auxiliary mounted passive components or auxiliary substances
    • H05K1/0231Capacitors or dielectric substances
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4697Manufacturing multilayer circuits having cavities, e.g. for mounting components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • H05K1/0243Printed circuits associated with mounted high frequency components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4602Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H10W90/724

Definitions

  • the present invention relates to a component built-in wiring board in which components such as capacitors are accommodated and a method for manufacturing the same.
  • a method is usually employed in which a package is formed by mounting an IC chip on an IC chip mounting wiring board, and the package is mounted on a motherboard.
  • it has been proposed to provide a capacitor in an IC chip mounting wiring board constituting this type of package in order to reduce switching noise of the IC chip and stabilize the power supply voltage.
  • a wiring board in which a capacitor is embedded in a core substrate and a buildup layer formed by laminating an interlayer insulating layer and a conductor layer on the core main surface and the core back surface of the core substrate has been conventionally proposed (for example, (See Patent Documents 1 and 2).
  • a wiring board in which a plurality of capacitors are embedded in a core board has been proposed.
  • An example of the method for manufacturing the wiring board will be described below.
  • a core substrate 204 made of a resin material having a plurality of accommodation holes 203 that are open on both the core main surface 201 and the core back surface 202 is prepared (see FIG. 45).
  • a main surface side conductor layer 205 is formed on substantially the entire core main surface 201, and a back surface side conductor layer 206 is formed on almost the entire core back surface 202.
  • a capacitor 209 (see FIGS. 45 and 46) having a capacitor main surface 207 and a capacitor back surface 208 is prepared.
  • a taping step of attaching the adhesive tape 210 to the core back surface 202 side is performed, and the opening of the housing hole 203 on the core back surface 202 side is sealed in advance.
  • condenser 209 in each of the some accommodation hole part 203 is performed, and the capacitor
  • condenser 209 is affixed on the adhesive surface of the adhesive tape 210, and is temporarily fixed (refer FIG. 45).
  • the capacitor 209 is fixed by curing and shrinking the resin filler 211 (See FIG.
  • JP 2011-216740 A (FIG. 1 etc.) JP 2013-183029 A (FIG. 1 etc.)
  • the width of the bridge portion 212 of the core substrate 204 existing between the adjacent accommodation holes 203 decreases accordingly, and the core of the bridge portion 212 is reduced.
  • the width of the back side conductor layer 206 formed on the back side 202 is also reduced.
  • the adhesive force between the back surface side conductor layer 206 and the adhesive tape 210 is reduced, when the resin filler 211 is filled in the gap A1, a part of the resin filler 211 is back surface side conductor layer. There is a possibility of sinking between 206 and the adhesive tape 210 (see the gap A2 in FIG. 47).
  • the back side conductor layer 206 formed on the bridge portion 212 is covered with the resin filler 211, and the entire surface of the back side conductor layer 206 cannot be roughened. Further, a rising portion of the resin filler 211 is formed on the core back surface 202 side of the bridge portion 212.
  • the interlayer insulating layer cannot be securely adhered to the surface of the back-side conductor layer 206. Therefore, a problem arises in the adhesion between the interlayer insulating layer and the back-side conductor layer 206, and delamination of the interlayer insulating layer is likely to occur. Therefore, the manufactured wiring board becomes defective and the reliability of the wiring board is lowered. There is a risk. *
  • the present invention has been made in view of the above-described problems, and an object of the present invention is to prevent a reduction in the adhesion between the core substrate and the wiring laminated portion, and to provide a component-embedded wiring substrate excellent in reliability and a method for manufacturing the same. Is to provide.
  • a means (means 1) for solving the said subject it has a core main surface and a core back surface, and has a core which has two or more accommodation holes opened on both the core main surface side and the core back surface side.
  • a plurality of components each having a substrate, a component main surface, a component back surface, and a component side surface, each of which is accommodated in the plurality of accommodating hole portions in a state in which the core main surface and the component main surface are directed to the same side;
  • a resin filler filled in a gap between the inner wall surface of the housing hole formed in the core substrate and the side surface of the component, and an interlayer insulating layer and a conductor layer were laminated on the core back surface and the component back surface.
  • a wiring board with a built-in component including a wiring laminated portion having a structure, wherein the core substrate includes a bridge portion positioned between adjacent accommodation hole portions, a plurality of the accommodation hole portions, and a back surface side surrounding the bridge portions.
  • a conductor layer is formed on the back surface of the core.
  • the thickness of the bridge portion is thinner than the total thickness of the outer periphery portion and the back side conductor layer, and the gap between the surface of the bridge portion and the wiring laminate portion is
  • a wiring board with a built-in component which is filled with a part of the resin filler.
  • the resin is interposed between the back side conductor layer formed on the bridge part and the wiring laminated part when fixing the component using the resin filler.
  • the filler may sink and cause a problem in the adhesion between the wiring laminated portion and the back side conductor layer. Therefore, in the component built-in wiring board of the above means 1, the back surface side conductor layer is formed so as to surround the bridge portion, and the back surface side conductor layer is not formed in the bridge portion. In this case, since the gap between the surface of the bridge portion and the wiring laminated portion is filled with a part of the resin filler, the above-described sinking is unlikely to occur. Therefore, since the core substrate and the wiring laminated portion are brought into close contact with each other, a component built-in wiring substrate having excellent reliability can be obtained. *
  • a plurality of receiving hole portions having a core main surface and a core back surface and opening on both the core main surface side and the core back surface side are provided.
  • a plurality of components each having a core substrate, a component main surface, a component back surface, and a component side surface, each housed in the plurality of housing holes with the core main surface and the component main surface facing the same side
  • a resin filler filled in a gap between the inner wall surface of the housing hole formed in the core substrate and the side surface of the component, an interlayer insulating layer and a conductor layer on the core back surface and the component back surface
  • a wiring board with a built-in component including a wiring laminated portion having a laminated structure, wherein the core substrate surrounds a bridge portion positioned between adjacent accommodation hole portions, a plurality of the accommodation hole portions, and the bridge portions.
  • a back side conductor layer is formed on the back side of the core.
  • An island-like layer that is independent of the back surface side conductor layer and protrudes at the same height as the surface of the back surface side conductor layer is formed on the back surface of the core of the bridge portion.
  • the resin is interposed between the back side conductor layer formed on the bridge part and the wiring laminated part when fixing the component using the resin filler.
  • the filler may sink and cause a problem in the adhesion between the wiring laminated portion and the back side conductor layer. Therefore, in the component built-in wiring board of the above means 2, the back surface side conductor layer is formed so as to surround the bridge portion, and the bridge portion is independent from the back surface side conductor layer and has the same height as the surface of the back surface side conductor layer. An island-like layer protruding to the bottom is formed.
  • the above-described resin filler is prevented from entering, it is difficult to form a raised portion of the resin filler on the core back surface side of the bridge portion. Therefore, the surface of the wiring laminated portion in contact with the core back surface can be flattened, and the dimensional accuracy of the wiring laminated portion is improved. Furthermore, in the component built-in wiring boards of the above means 1 and 2, since a plurality of receiving hole portions are formed in the core substrate and one component is received in one receiving hole portion, It is not necessary to increase the opening area of the part. Therefore, the strength of the core substrate can be ensured while increasing the number of components mounted. If a plurality of components are accommodated in one accommodation hole, the opening area of the accommodation hole is increased, and the strength of the core substrate is reduced. *
  • the core substrate constituting the component built-in wiring board is formed in a plate shape having a core main surface and a core back surface located on the opposite side, and has a plurality of receiving holes for receiving components.
  • a material for forming the core substrate is not particularly limited, but a suitable core substrate is formed mainly of a polymer material.
  • Specific examples of the polymer material for forming the core substrate include, for example, an epoxy resin, a polyimide resin, a bismaleimide / triazine resin, and a polyphenylene ether resin.
  • a composite material of these resins and organic fibers such as glass fibers (glass woven fabric or glass nonwoven fabric) or polyamide fibers may be used. *
  • the core substrate has a bridge portion positioned between adjacent accommodation hole portions, and an outer peripheral portion in which a back surface side conductor layer surrounding the plurality of accommodation hole portions and the bridge portion is formed on the core back surface.
  • the back-side conductor layer can be formed of a conductive metal material or the like. Examples of the metal material constituting the back-side conductor layer include copper, silver, iron, cobalt, nickel, and the like. In particular, the metal material is preferably made of copper having high conductivity and low cost. Further, the back side conductor layer is preferably formed by plating. If it does in this way, a back side conductor layer can be formed simply and at low cost. However, the back side conductor layer may be formed by printing a metal paste.
  • the back side conductor layer has one through hole that exposes the core back side opening of the plurality of receiving holes and the core back side of the bridge part, and bridges from the opening end of the through hole.
  • An overhanging part that projects toward the part may be provided, and the tip of the overhanging part may have a curved surface shape in plan view. In this way, even if thermal stress is applied to the resin filler, the stress concentration on the tip of the overhang portion (back side conductor layer) is alleviated by the curved outer surface. Therefore, the occurrence of cracks in the resin filler can be reliably prevented.
  • the plurality of components have a component main surface, a component back surface, and a component side surface, and are respectively accommodated in the plurality of accommodating hole portions in a state where the core main surface and the component main surface face the same side.
  • the shape of the component in plan view can be arbitrarily set, but in particular, it is preferably a polygonal shape in plan view having a plurality of sides. Examples of the polygonal shape in a plan view include a substantially rectangular shape in a plan view, a substantially triangular shape in a plan view, and a substantially hexagonal shape in a plan view, and in particular, a generally rectangular shape in a plan view. It is good.
  • the “substantially rectangular shape in plan view” does not mean only a complete shape in plan view but also includes a shape in which corners are chamfered and a shape in which a part of a side is a curve. *
  • Suitable components include capacitors, semiconductor integrated circuit elements (IC chips), MEMS (Micro Electro Mechanical Systems) elements manufactured by a semiconductor manufacturing process, and the like. *
  • suitable capacitors include a chip capacitor having a structure in which a plurality of internal electrode layers are stacked via a dielectric layer, and a structure in which a plurality of internal electrode layers are stacked via a dielectric layer. And a via array type capacitor in which a plurality of via conductors connected to a plurality of internal electrode layers are provided, and the plurality of via conductors are arranged in an array as a whole.
  • the dielectric layer constituting the capacitor examples include a ceramic dielectric layer, a resin dielectric layer, and a dielectric layer made of a ceramic-resin composite material.
  • the internal electrode layer and the via conductor are not particularly limited.
  • the dielectric layer when it is a ceramic dielectric layer, it may be a metallized conductor.
  • the metallized conductor is formed by applying a conductive paste containing metal powder by a conventionally well-known method, for example, a metallized printing method, followed by baking. *
  • a resin filler is filled in the gap between the inner wall surface of the accommodation hole and the side surface of the component.
  • the resin filler can be appropriately selected in consideration of insulation, heat resistance, moisture resistance, and the like.
  • the polymer material forming the resin filler include an epoxy resin, a phenol resin, a urethane resin, a silicone resin, and a polyimide resin.
  • the wiring laminated portion constituting the component built-in wiring board has a structure in which an interlayer insulating layer and a conductor layer mainly composed of a polymer material are laminated on the core back surface and the component back surface.
  • the wiring laminated portion (backside wiring laminated portion) is formed only on the core back surface and the component back surface, but has a structure in which an interlayer insulating layer and a conductor layer are laminated on the core main surface and the component main surface.
  • a portion (main surface side wiring laminated portion) may be further formed. With such a configuration, an electric circuit can be formed not only on the back surface side wiring laminated portion but also on the main surface side wiring laminated portion, so that it is possible to further enhance the functionality of the component built-in wiring board.
  • the interlayer insulating layer can be appropriately selected in consideration of insulation, heat resistance, moisture resistance, and the like.
  • Preferred examples of the polymer material for forming the interlayer insulating layer include thermosetting resins such as epoxy resins, phenol resins, urethane resins, silicone resins, polyimide resins, bismaleimide-triazine resins, xylene resins, polyester resins, Examples thereof include thermoplastic resins such as polycarbonate resin, acrylic resin, polyacetal resin, and polypropylene resin.
  • the conductor layer can be formed using a conductive metal material or the like.
  • the metal material constituting the conductor layer include copper, silver, iron, cobalt, nickel and the like.
  • the conductor layer is preferably made of copper having high conductivity and low cost.
  • the conductor layer may be formed by plating. In this way, the conductor layer can be formed easily and at low cost.
  • the conductor layer may be formed by printing a metal paste.
  • an island layer is formed on the core back surface of the bridge portion independently of the back surface side conductor layer and protruding at the same height as the surface of the back surface side conductor layer.
  • the shape of the island layer in plan view can be arbitrarily set.
  • the island-like layer can be formed of a resin material, a ceramic material, a metal material, or the like, but is particularly preferably a metal material.
  • the same material (material having conductivity) as the material constituting the back side conductor layer can be used, so that the manufacturing cost of the component built-in wiring board can be suppressed.
  • a metal material include copper, silver, iron, cobalt, nickel and the like.
  • the metal material is preferably made of copper having high conductivity and low cost.
  • a resin material an epoxy resin, a polyimide resin, a bismaleimide-triazine resin, a polyphenylene ether resin, a phenol resin etc. can be mentioned, for example.
  • composite materials of these resins and glass fibers may be used.
  • the ceramic material include alumina, aluminum nitride, silicon nitride, boron nitride, beryllia, mullite, glass ceramic and the like.
  • a plurality of island layers may be formed on the back surface of the core of the bridge portion, and a region between adjacent island layers may have a slit shape. In this way, the surface of the wiring laminated portion in contact with the front end surface of each island layer and the surface of the wiring laminated portion in contact with the surface of the back side conductor layer can be flattened. The accuracy is further improved.
  • the plurality of island layers may be arranged in a direction orthogonal to a virtual line connecting the centers of the adjacent accommodation holes, or may have an elongated shape extending in parallel with the virtual line. Further, the island layer may have a curved shape in plan view. By doing so, a part of the resin filler smoothly flows into the gap between the back-side conductor layer and the island layer, so that the above-described submergence is further less likely to occur. Further, even if thermal stress is applied to the resin filler, the stress concentration on the outer peripheral portion of the island layer is alleviated by the curved outer surface. Therefore, generation
  • a through-hole conductor penetrating the core main surface and the core back surface may be formed in the bridge portion, and the island layer may be a pad that is electrically connected to the end portion on the core back surface side of the through-hole conductor.
  • the function of the component built-in wiring board can be enhanced.
  • a concave portion that opens on the back surface of the core and communicates between adjacent accommodation holes may be provided in a non-formation region where no island layer exists on the core back surface of the bridge portion. In this way, the resin filler flows into (is escaped from) the recesses in addition to the gaps between the back-side conductor layer and the island-like layer, so that the above-described submergence is further less likely to occur.
  • the resin is interposed between the back side conductor layer formed on the bridge part and the wiring laminated part when fixing the component using the resin filler.
  • the filler may sink and cause a problem in the adhesion between the wiring laminated portion and the back side conductor layer. Therefore, in the method for manufacturing the component built-in wiring board of means 3 described above, in the conductor layer forming step, the back surface side conductor layer is formed so as to surround the bridge portion, and the thickness of the bridge portion is set to the outer peripheral portion and the back surface side conductor layer. It is thinner than the total thickness.
  • the filling step by performing the filling step, the gap between the surface of the bridge portion and the wiring laminated portion is filled with a part of the resin filler, so that the above-described submergence hardly occurs. Therefore, when performing the wiring laminated portion forming step, the core substrate and the wiring laminated portion are surely brought into close contact with each other, so that a component built-in wiring substrate with excellent reliability can be obtained.
  • a method of manufacturing a component built-in wiring board according to the above means 2 wherein a core substrate preparation step for preparing the core substrate, and the core After the substrate preparation step, by forming a plurality of the receiving hole portions, a receiving hole portion forming step for obtaining the core substrate having the outer peripheral portion and the bridge portion, and after the receiving hole portion forming step, A conductor layer forming step of forming the back side conductor layer on the core back surface, an island layer forming step of forming the island layer on the core back surface of the bridge portion after the accommodation hole forming step, and the plurality A component preparing step for preparing the component, a housing step for housing the component in a plurality of the housing holes after the conductor layer forming step, the island layer forming step, and the component preparing step, and the housing After the process, Filling the resin filler in the gap between the inner wall surface of the hole and the side surface of the component, and filling
  • the resin is interposed between the back side conductor layer formed on the bridge part and the wiring laminated part when fixing the component using the resin filler.
  • the filler may sink and cause a problem in the adhesion between the wiring laminated portion and the back side conductor layer. Therefore, in the method of manufacturing the component built-in wiring board according to the above means 4, a conductor layer forming step of forming a back surface side conductor layer so as to surround the bridge portion is performed, and the bridge portion is independent from the back surface side conductor layer and An island-shaped layer forming step for forming an island-shaped layer protruding at the same height as the surface of the side conductor layer is performed.
  • the resin filler since the above-mentioned resin filler is prevented from entering when the filling step is performed, the resin filler swells on the core back surface side of the bridge portion. A part becomes difficult to be formed. Therefore, the surface of the wiring laminated portion formed on the back side of the core can be flattened, and the dimensional accuracy of the wiring laminated portion is improved. Further, in the method of manufacturing the component built-in wiring board of the means 3 and 4, a plurality of housing holes are formed in the core substrate in the housing hole forming process, and one component is housed in one housing hole in the housing process. Therefore, it is not necessary to increase the opening area of each receiving hole. Therefore, the strength of the core substrate can be ensured while increasing the number of components mounted. If a plurality of components are accommodated in one accommodation hole, the opening area of the accommodation hole is increased, and the strength of the core substrate is reduced. *
  • the core substrate constituting the component built-in wiring substrate is prepared by a conventionally known method and prepared in advance.
  • a laminated plate having a back side conductor layer and a metal foil to be an island layer attached to the back surface of the core is prepared, and in the conductor layer formation step and the island layer formation step, a plurality of Forming a plating resist having an opening for exposing the housing hole and the bridge portion, and a covering portion for covering a portion to be an island layer on the core back surface of the bridge portion on the surface of the metal foil And a metal foil removing step for partially removing the metal foil by etching the exposed portion from the opening in the metal foil and on the outer peripheral side of the covering portion, and after the metal foil removing step, the plating resist And a resist removing step for removing.
  • a core substrate having an outer peripheral portion and a bridge portion is obtained by forming a plurality of accommodation holes.
  • a back surface side conductor layer is formed on the core back surface of the outer peripheral portion.
  • the thickness of the bridge portion is made larger than the total thickness of the outer peripheral portion and the back surface side conductor layer by forming the back surface side conductor layer on the core back surface of the outer peripheral portion in the conductor layer forming step. make it thin.
  • an island-like layer formation process is performed after an accommodation hole part formation process, and an island-like layer is formed in the core back surface of a bridge
  • a plurality of island layers are formed on the back surface of the core of the bridge portion, and the plurality of island layers are filled with a resin filler in the gap between the back side conductor layer and the island layer in the filling step. It may extend along the flowing direction. In this way, a part of the resin filler smoothly flows into the gap between the back-side conductor layer and the island-like layer, so that the above-described sinking is further less likely to occur.
  • a laminated plate having a metal foil to be a back side conductor layer attached to the back surface of the core is prepared.
  • a plurality of receiving holes and bridges are prepared.
  • Forming a plating resist having one opening on the surface of the metal foil to expose a portion of the core on the back surface of the core, and etching the exposed portion from the opening in the metal foil to form the metal foil A metal foil removing step for partially removing the resist and a resist removing step for removing the plating resist after the metal foil removing step may be performed. By doing so, it is not necessary to newly prepare a material for forming the back surface side conductor layer when forming the back surface side conductor layer, and therefore, the back surface side conductor layer can be easily formed.
  • a plurality of components constituting the component-embedded wiring board are prepared by a conventionally known method and prepared in advance.
  • the components are housed in the plurality of housing holes, respectively.
  • the resin filler is filled in the gap between the inner wall surface of the housing hole and the side surface of the component, and the core back surface of the bridge portion is covered with a part of the resin filler.
  • the resin filler is filled in the gap between the inner wall surface of the housing hole and the side surface of the component, and a part of the resin filler is put in the gap between the back side conductor layer and the island layer. Fill. *
  • a resin filler in which the component back surface of the component covers the core back surface of the bridge portion (particularly, in means 4, the resin filler is filled in the gap between the back-side conductor layer and the island layer). If it is not flush with the surface of the wiring, the surface of the wiring laminated portion in contact with the back surface of the component and the surface of the resin filler covering the back surface of the core is flattened when forming the wiring laminated portion in the wiring laminated portion forming step. Therefore, the dimensional accuracy of the component built-in wiring board is lowered.
  • the housing step and the filling step of the means 3 the core back surface side openings of the plurality of housing holes are closed with an adhesive tape having an adhesive surface, and the adhesive surface is applied to the back surface side conductor layer formed on the core back surface of the outer peripheral portion.
  • the adhesive tape may be removed after the filling process, with the adhesive surface being separated from the core back surface of the bridge portion.
  • the housing step and the filling step of the means 4 include closing the core back surface side openings of the plurality of housing holes with an adhesive tape having an adhesive surface, and forming the back surface side conductor layer and the bridge portion formed on the core back surface of the outer peripheral portion.
  • the adhesive tape may be removed after the filling step.
  • the component back side of the component is attached to the adhesive surface of the adhesive tape and temporarily fixed, and the component back surface of each component is formed on the core back surface and the surface of the back side conductor layer.
  • the adhesive tape is supported by the island-like layer, the adhesive tape is prevented from being bent, so that the positional accuracy of the parts attached to the adhesive surface of the adhesive tape is reduced. Is prevented. Therefore, it is possible to flatten the surface of the wiring laminated portion in contact with the back surface of the component and the surface of the back conductor layer, and the dimensional accuracy of the component built-in wiring board is improved.
  • the wiring laminated portion is formed on the surface of the resin filler covering the core back surface of the bridge portion and on the component back surface. Further, in the wiring laminated portion forming step of the above means 4, the wiring laminated portion is formed on the surface of the resin filler filled in the gap between the back side conductor layer and the island-like layer and on the back side of the component.
  • the component built-in wiring board is manufactured through the above processes.
  • FIG. 1 is a schematic sectional view showing a wiring board according to a first embodiment embodying the present invention.
  • the schematic back view which shows a core board
  • FIG. 3 is a sectional view taken along line AA in FIG. 2.
  • FIG. 3 is a sectional view taken along line BB in FIG. 2.
  • FIG. 6 is a sectional view taken along the line CC of FIG.
  • FIG. 6 is a sectional view taken along line DD of FIG. 5.
  • the schematic sectional drawing which shows a core board
  • substrate in an accommodation hole part formation process Explanatory drawing which shows a resist formation process (conductor layer formation process).
  • substrate and plating resist in a resist formation process (conductor layer formation process).
  • Explanatory drawing which shows a metal foil removal process and a resist removal process Explanatory drawing which shows the core board
  • FIG. 26 is a sectional view taken along line EE in FIG. 25.
  • FIG. 26 is a sectional view taken along line FF in FIG. 25.
  • substrate and plating resist in a resist formation process (a conductor layer formation process, an island-shaped layer formation process).
  • Explanatory drawing which shows a metal foil removal process and a resist removal process.
  • the schematic back view which shows the core board
  • Explanatory drawing which shows the process of sticking an adhesive tape.
  • Explanatory drawing which shows a accommodation process.
  • the schematic back view which shows the core board
  • substrate in other embodiment The schematic back view which shows the core board
  • Explanatory drawing which shows the manufacturing method of the wiring board in a prior art Similarly, explanatory drawing of the manufacturing method of a wiring board.
  • a component built-in wiring board 10 (hereinafter referred to as “wiring board 10”) of this embodiment is a wiring board for mounting an IC chip.
  • the wiring substrate 10 includes a substantially rectangular core substrate 11, a main surface side buildup layer 31 formed on the core main surface 12 (upper surface in FIG. 1) of the core substrate 11, and a core back surface 13 of the core substrate 11. It consists of a back-side buildup layer 32 (wiring laminate) formed on (the lower surface in FIG. 1).
  • wiring board 10 includes a substantially rectangular core substrate 11, a main surface side buildup layer 31 formed on the core main surface 12 (upper surface in FIG. 1) of the core substrate 11, and a core back surface 13 of the core substrate 11. It consists of a back-side buildup layer 32 (wiring laminate) formed on (the lower surface in FIG. 1).
  • the main surface side buildup layer 31 has a structure in which two interlayer insulating layers 33 and 35 made of a thermosetting resin (epoxy resin) and a conductor layer 41 made of copper are alternately laminated.
  • the thermal expansion coefficient of the main surface side buildup layer 31 is about 10 to 60 ppm / ° C. (specifically, about 20 ppm / ° C.).
  • the thermal expansion coefficient of the main surface side buildup layer 31 is an average value of measured values between 30 ° C. and the glass transition temperature (Tg).
  • Tg glass transition temperature
  • the interlayer insulating layers 33 and 35 there are a plurality of main surface side via conductors 43 each formed by copper plating. *
  • terminal pads 44 electrically connected to the conductor layer 41 through the main surface side via conductors 43 are formed in an array on the surface of the second interlayer insulating layer 35.
  • the terminal pad 44 of this embodiment is a so-called C4 pad (Controlled Collapsed Chip Connection pad).
  • the surface of the interlayer insulating layer 35 is almost entirely covered with the solder resist layer 50.
  • An opening 46 for exposing the terminal pad 44 is formed at a predetermined portion of the solder resist layer 50.
  • a plurality of solder bumps 45 are provided on the surface of the terminal pad 44.
  • Each solder bump 45 is electrically connected to the surface connection terminal 22 of the IC chip 21 (semiconductor integrated circuit element).
  • the IC chip 21 of the present embodiment is a plate-like object having a rectangular shape in plan view of 12.0 mm long ⁇ 12.0 mm wide ⁇ 0.9 mm thick, and has a thermal expansion coefficient of about 3 to 4 ppm / ° C. (specifically (Specifically, about 3.5 ppm / ° C.) of silicon.
  • Each terminal pad 44 and each solder bump 45 are located in an area above the chip capacitors 100 and 101 in the main surface side buildup layer 31, and this area becomes an IC chip mounting area 23.
  • the IC chip mounting area 23 is set on the surface 38 of the solder resist layer 50. *
  • the back surface side buildup layer 32 has substantially the same structure as the main surface side buildup layer 31 described above. That is, the back-side buildup layer 32 has a thermal expansion coefficient of about 10 to 60 ppm / ° C. (specifically, about 20 ppm / ° C.), and two interlayer insulating layers 34 made of a thermosetting resin (epoxy resin). , 36 and conductor layers 42 made of copper are alternately laminated.
  • the thermal expansion coefficient of the back side buildup layer 32 is an average value of measured values between 30 ° C. and the glass transition temperature (Tg).
  • Tg glass transition temperature
  • the interlayer insulating layers 34 and 36 there are a plurality of back side via conductors 47 each formed by copper plating. *
  • pads 48 electrically connected to the conductor layer 42 via the back side via conductors 47 are formed in a lattice pattern at a plurality of locations on the lower surface of the second interlayer insulating layer 36.
  • the lower surface of the interlayer insulating layer 36 is almost entirely covered with the solder resist layer 51.
  • An opening 40 for exposing the pad 48 is formed at a predetermined position of the solder resist layer 51.
  • a plurality of solder bumps 49 are provided for electrical connection with a mother board (not shown).
  • the wiring board 10 shown in FIG. 1 is mounted on a mother board (not shown) by each solder bump 49. *
  • the core substrate 11 of the present embodiment has a substantially rectangular shape in plan view of 25 mm length ⁇ 25 mm width ⁇ 0.8 mm thickness.
  • the core substrate 11 is made of a thermosetting resin (epoxy resin), and has a thermal expansion coefficient of about 10 to 30 ppm / ° C. (specifically, 18 ppm / ° C.) in the plane direction (XY direction).
  • the thermal expansion coefficient of the core substrate 11 is an average value of measured values between 0 ° C. and the glass transition temperature (Tg). *
  • a plurality of through-hole conductors 16 are formed in the core substrate 11 so as to penetrate the core main surface 12 and the core back surface 13.
  • the through-hole conductor 16 connects and connects the core main surface 12 side and the core back surface 13 side of the core substrate 11.
  • a filling resin 17 such as an epoxy resin.
  • the core substrate 11 has two receiving holes 90 and 91 that are open on both the core main surface 12 side and the core back surface 13 side. That is, each accommodation hole 90, 91 is a through hole.
  • Each of the receiving hole portions 90 and 91 has a substantially elliptical shape in plan view with a long side of 10 mm and a short side of 8 mm.
  • the core substrate 11 includes a bridge portion 61 positioned between the adjacent accommodation hole portions 90 and 91, and an outer peripheral portion 62 that surrounds each of the accommodation hole portions 90 and 91 and the bridge portion 61. *
  • a main surface side conductor layer 71 made of copper is formed on the core main surface 12 of the outer peripheral portion 62, and a back surface side conductor layer 81 made of copper is formed on the core back surface 13 of the outer peripheral portion 62.
  • the main surface side conductor layer 71 is electrically connected to the upper end of the through-hole conductor 16, and the back surface side conductor layer 81 is electrically connected to the lower end of the through-hole conductor 16. That is, the through-hole conductor 16 has a function of electrically connecting the main surface side buildup layer 31 and the back surface side buildup layer 32.
  • the back surface side conductor layer 81 exposes the core back surface 13 side opening of each housing hole 90, 91 and one through hole 82 that exposes the core back surface 13 of the bridge portion 61.
  • the back-side conductor layer 81 is a plain conductor formed only on the core back surface 13 of the outer peripheral portion 62, and is not formed on the core back surface 13 of the bridge portion 61.
  • the opening end of the through hole 82 is located on the outer peripheral side with respect to the opening ends of the accommodation hole portions 90 and 91.
  • the back-side conductor layer 81 includes a pair of protruding portions 83 that are extended from the opening end of the through hole 82 toward the bridge portion 61.
  • the two overhang portions 83 are located on opposite sides of the open end of the through hole 82 and project in a direction approaching each other.
  • projection parts 83 has a curved surface shape by planar view. *
  • the main surface side conductor layer 71 has substantially the same structure as the back surface side conductor layer 81 described above. That is, as shown in FIGS. 1, 3, 4, and 17, the main surface side conductor layer 71 exposes the core main surface 12 side opening of each housing hole 90, 91 and also the core of the bridge portion 61.
  • One through-hole 72 that exposes the main surface 12 is provided. That is, the main surface side conductor layer 71 is a plain conductor formed only on the core main surface 12 of the outer peripheral portion 62, and is not formed on the core main surface 12 of the bridge portion 61. Further, the opening end of the through hole 72 is located on the outer peripheral side with respect to the opening ends of the accommodation hole portions 90 and 91.
  • the main surface side conductor layer 71 includes a pair of projecting portions 73 that project from the opening end of the through hole 72 toward the bridge portion 61.
  • the two overhanging portions 73 are located on opposite sides of the opening end of the through hole 72 and project in a direction approaching each other.
  • projection parts 73 has a curved surface shape by planar view.
  • the thickness T1 of the bridge portion 61 is equal to the thickness T2 of the outer peripheral portion 62 (specifically 0.8 mm), the thickness T1 of the bridge portion 61 is equal to the outer peripheral portion 62. And the main surface side conductor layer 71 and the back surface side conductor layer 81 are thinner than the total thickness. The thickness T1 of the bridge portion 61 is thinner than the total thickness of the outer peripheral portion 62 and the main surface side conductor layer 71 and the total thickness T3 of the outer peripheral portion 62 and the back surface side conductor layer 81. ing. *
  • the chip capacitor 100 (component) is housed in the housing hole 90, and the chip capacitor 101 (component) is similarly housed in the housing hole 91. It is housed in an embedded state.
  • the chip capacitors 100 and 101 have the core main surface 12 and the capacitor main surface 102 of the core substrate 11 facing the same side, and the core back surface 13 and the capacitor back surface 103 of the core substrate 11 facing the same side. Contained in state. Further, the chip capacitors 100 and 101 are arranged in a region immediately below the IC chip mounting region 23 in the core substrate 11. *
  • the chip capacitors 100 and 101 have one capacitor main surface 102 (upper surface in FIG. 1) as a component main surface and one capacitor back surface as a component back surface. 103 (lower surface in FIG. 1) and four capacitor side surfaces 104 which are component side surfaces.
  • An interlayer insulating layer 33 constituting the main surface side buildup layer 31 is formed on the capacitor main surface 102, and an interlayer insulating layer 34 constituting the back surface side buildup layer 32 is formed on the capacitor back surface 103. Is formed.
  • the ceramic sintered body 106 arranged is provided.
  • the ceramic sintered body 106 of the present embodiment is a plate-like object having a substantially rectangular shape in plan view with a length of 6.0 mm, a width of 4.0 mm, and a thickness of 0.8 mm. That is, the thickness of the ceramic sintered body 106 is equal to the thickness (0.8 mm) of the core substrate 11.
  • the thermal expansion coefficient of the ceramic sintered body 106 is about 8 to 12 ppm / ° C., specifically about 9.5 ppm / ° C.
  • the thermal expansion coefficient of the ceramic sintered body 106 is an average value of measured values between 30 ° C. and 250 ° C.
  • the ceramic dielectric layer 105 is made of a sintered body of barium titanate, which is a kind of high dielectric ceramic, and functions as a dielectric (insulator) between the power internal electrode layer 141 and the ground internal electrode layer 142. To do.
  • Each of the power supply internal electrode layer 141 and the ground internal electrode layer 142 is a layer formed mainly of nickel, and is disposed in every other layer in the ceramic sintered body 106. *
  • a power supply electrode 111 and a ground electrode 121 are provided on a pair of capacitor side surfaces 104 facing each other in the ceramic sintered body 106, respectively.
  • the capacitor main surface side end portion 112 and the capacitor back surface side end portion 113 of the power supply electrode 111 are located on the capacitor main surface 102 and the capacitor back surface 103, respectively.
  • the capacitor main surface side end portion 122 and the capacitor back surface side end portion 123 of the ground electrode 121 are also located on the capacitor main surface 102 and the capacitor back surface 103, respectively.
  • the power supply electrode 111 is connected to the plurality of power supply internal electrode layers 141
  • the ground electrode 121 is connected to the plurality of ground internal electrode layers 142.
  • the electrodes 111 and 121 are made of nickel as a main material, and the surface is covered with a copper plating layer (not shown). *
  • the chip capacitors 100 and 101 function as capacitors.
  • the power supply electrodes 111 of the chip capacitors 100 and 101 are connected to the surface connection terminals 22 of the IC chip 21 through a power supply conduction path including the main surface side via conductors 43, the conductor layers 41, the terminal pads 44 and the solder bumps 45. Electrically connected. Then, the ground electrodes 121 of the chip capacitors 100 and 101 are connected to the surface connection terminals 22 of the IC chip 21 through a ground conduction path including the main surface side via conductors 43, the conductor layers 41, the terminal pads 44 and the solder bumps 45. Electrically connected. As a result, power can be supplied from the chip capacitors 100 and 101 to the IC chip 21.
  • the gap between the inner wall surface 92 of the accommodation hole 90 and the capacitor side surface 104 of the chip capacitor 100, and the inner wall surface 92 of the accommodation hole portion 91 and the capacitor side surface 104 of the chip capacitor 101 The gap is filled with a resin filler 93 made of a polymer material (in this embodiment, an epoxy resin which is a thermosetting resin).
  • the resin filler 93 has a function of fixing the chip capacitors 100 and 101 to the core substrate 11.
  • a gap with the interlayer insulating layer 34 constituting 32 is filled with a part of the resin filler 93.
  • the size of the gap between the inner wall surface 92 of the receiving hole portions 90 and 91 and the capacitor side surface 104 of the chip capacitors 100 and 101 is set to 1 mm.
  • the thickness of the part affixed on the core main surface 12 of the bridge part 61 in the resin filler 93, and the thickness of the part affixed on the core back surface 13 of the bridge part 61 in the resin filler 93 Is set to 50 ⁇ m.
  • an intermediate product of the core substrate 11 is prepared by a conventionally known method and prepared in advance. Specifically, a copper foil 152 that becomes the main surface side conductor layer 71 is affixed to the core main surface 12 of the base material 151, and a copper foil 152 that becomes the back surface side conductor layer 81 on the core back surface 13 of the base material 151.
  • a copper-clad laminate 150 (see FIG. 8) to which (metal foil) is attached is prepared, and this is used as an intermediate product of the core substrate 11.
  • the base material 151 of the present embodiment is a plate-like object having a rectangular shape in plan view of 400 mm in length, 400 mm in width, and 0.8 mm in thickness.
  • the intermediate product of the core substrate 11 is a multi-piece core substrate having a structure in which a plurality of regions to be the core substrate 11 are arranged vertically and horizontally along the plane direction. *
  • a plating layer 161 to be the through-hole conductor 16 is formed on the inner wall surface of the through hole (see FIG. 9).
  • a plating layer 162 to be the main surface side conductor layer 71 is formed on the core main surface 12, and a plating layer 163 to be the back surface side conductor layer 81 is formed on the core back surface 13 (see FIG.
  • the hollow portion of the plating layer 161 to be the through-hole conductor 16 is filled with an insulating resin material (epoxy resin) to form a filling resin 17 (see FIG. 9).
  • an insulating resin material epoxy resin
  • a plating layer 164 is formed on the surfaces of the plating layers 162 and 163 by performing electroless copper plating according to a conventionally known method.
  • the core substrate 11 is punched using a router to form a plurality of accommodation holes 90 and 91 (see FIGS. 9 and 10). At this point, the core substrate 11 having the outer peripheral portion 62 and the bridge portion 61 is obtained.
  • the main surface side conductor layer 71 is formed on the core main surface 12 of the outer peripheral portion 62, and the back surface side conductor layer 81 is formed on the core back surface 13 of the outer peripheral portion 62.
  • the plating layers 162 to 164 are etched, and the plating layers 162 to 164 are patterned by, for example, a subtractive method. More specifically, first, a resist forming step is performed, and a dry film is laminated on the surface of the plating layer 164 on the core main surface 12 side and on the surface of the plating layer 164 on the core back surface 13 side.
  • a plating resist 170 having one opening 171 is formed (see FIGS. 11 and 12). From the opening 171 of the plating resist 170 formed on the core main surface 12 side, each of the receiving hole portions 90 and 91, the entire plating layer 164 that is a portion on the core main surface 12 of the bridge portion 61, and the outer periphery A part of the plating layer 164 formed on the core main surface 12 of the part 62 is exposed. In addition, from the opening 171 of the plating resist 170 formed on the core back surface 13 side, each of the receiving hole portions 90 and 91, the entire plating layer 164 that is a portion of the bridge portion 61 on the core back surface 13, and the outer peripheral portion 62.
  • a part of the plating layer 164 formed on the core back surface 13 is exposed.
  • the metal foil removing step is performed, and the exposed portions from the openings 171 in the plating layers 162 to 164 are etched to partially remove the copper foil 152 and the plating layers 162 to 164 (FIG. 13, FIG. (See FIG. 14).
  • a resist removing step is performed, and the plating resist 170 is peeled (removed).
  • the main surface side conductor layer 71 is formed on the core main surface 12, and the back surface side conductor layer 81 is formed on the core back surface 13 (see FIGS. 13 and 14).
  • the thickness T1 see FIG.
  • the bridge portion 61 is the total thickness of the outer peripheral portion 62 and the main surface side conductor layer 71 and the total thickness of the outer peripheral portion 62 and the back surface side conductor layer 81. It is thinner than T3 (see FIG. 3). Further, a part of the plating layer 164 on the core main surface 12 side becomes a lid plating layer covering the end surface on the core main surface 12 side of the through-hole conductor 16, and a part of the plating layer 164 on the core back surface 13 side becomes a through-hole. This is a lid plating layer that covers the end surface of the conductor 16 on the core back surface 13 side. *
  • the two chip capacitors 100 and 101 are prepared by a conventionally known method and prepared in advance.
  • the chip capacitors 100 and 101 are manufactured as follows. That is, a ceramic green sheet is formed, and a nickel paste for internal electrodes is screen printed on the green sheet and dried. As a result, a power internal electrode portion that will later become the power internal electrode layer 141 and a ground internal electrode portion that will become the ground internal electrode layer 142 are formed. Next, the green sheets with the power supply internal electrode portions and the green sheets with the ground internal electrode portions are alternately stacked, and each green sheet is integrated by applying a pressing force in the sheet stacking direction. To form a green sheet laminate. *
  • the paste is printed on the upper surface, the lower surface, and the side surface of the green sheet laminate, and the power supply electrode 111 and the ground electrode 121 are formed so as to cover the side end surfaces of the electrode portions on the side surface side of the green sheet laminate.
  • the green sheet laminate is dried to solidify the electrodes 111 and 121 to some extent.
  • the green sheet laminate is degreased and fired at a predetermined temperature for a predetermined time.
  • barium titanate and nickel in the paste are simultaneously sintered to form a ceramic sintered body 106.
  • electroless copper plating is performed on each of the electrodes 111 and 121 included in the obtained ceramic sintered body 106.
  • a copper plating layer is formed on the electrodes 111 and 121, and the chip capacitors 100 and 101 are completed.
  • the opening on the core back surface 13 side of each housing hole 90, 91 is sealed with a peelable adhesive tape 181 (see FIG. 15).
  • the adhesive surface of the adhesive tape 181 is in close contact with the back-side conductor layer 81 formed on the core back surface 13 of the outer peripheral portion 62, while the adhesive surface is separated from the core back surface 13 of the bridge portion 61.
  • the adhesive tape 181 is supported by a support table (not shown).
  • a mounting device manufactured by Hyundai Motor Co., Ltd.
  • the core main surface 12 and the capacitor main surface 102 are directed to the same side
  • the core back surface 13 and the capacitor back surface 103 are directed to the same side.
  • the chip capacitors 100 and 101 are accommodated in the accommodating holes 90 and 91, respectively (see FIGS. 16 and 17). At this time, the chip capacitors 100 and 101 are temporarily fixed by attaching the capacitor back surface 103 to the adhesive surface of the adhesive tape 181. *
  • a dispenser device is provided in the gap between the inner wall surface 92 of the accommodation hole 90 and the capacitor side surface 104 of the chip capacitor 100 and the gap between the inner wall surface 92 of the accommodation hole portion 91 and the capacitor side surface 104 of the chip capacitor 101.
  • a resin filler 93 made of a thermosetting resin (manufactured by NAMICS Co., Ltd.) is filled using (manufactured by Asymtek) (see FIG. 18).
  • the core main surface 12 and the core back surface 13 of the bridge portion 61 are covered with a part of the resin filler 93.
  • the chip capacitors 100 and 101 are fixed in the accommodation holes 90 and 91 by curing the resin filler 93.
  • the adhesive tape 181 is peeled (removed). Thereafter, the surface of the conductor layers 71, 81, the surface 94 of the resin filler 93 covering the core main surface 12 of the bridge portion 61, and the surface 95 of the resin filler 93 covering the core back surface 13 of the bridge portion 61 are roughened. I do. *
  • the main surface side buildup layer 31 is formed on the core main surface 12 and the back surface side buildup layer 32 is formed on the core back surface 13 based on a conventionally known method.
  • an interlayer insulating layer 33 is formed by depositing a thermosetting epoxy resin on the surface 94 of the resin filler 93 and the capacitor main surface 102 (see FIG. 19).
  • an interlayer insulating layer 34 is formed by depositing a thermosetting epoxy resin on the surface 95 of the resin filler 93 and the capacitor back surface 103 (see FIG. 19).
  • a via hole 191 is formed in (see FIG. 19). Specifically, a via hole 191 penetrating the interlayer insulating layer 33 is formed to expose the surfaces (surfaces on the capacitor main surface 102 side) of the electrodes 111 and 121 constituting the chip capacitors 100 and 101. Also, a via hole 192 that penetrates the interlayer insulating layer 34 is formed to expose the surfaces (surfaces on the capacitor back surface 103 side) of the electrodes 111 and 121 constituting the chip capacitors 100 and 101.
  • an etching resist is formed, and then electrolytic copper plating is performed. Further, the etching resist is removed and soft etching is performed. As a result, the conductor layer 41 is patterned on the interlayer insulating layer 33 and the conductor layer 42 is patterned on the interlayer insulating layer 34 (see FIG. 20). At the same time, via conductors 43 and 47 are formed in the via holes 191 and 192, respectively. *
  • An insulating layer 35 is formed.
  • an interlayer insulating layer having via holes (not shown) at positions where the back side via conductors 47 are to be formed by depositing a thermosetting epoxy resin on the interlayer insulating layer 34 and performing laser drilling. 36 is formed.
  • electrolytic copper plating is performed according to a conventionally known method to form via conductors 43 and 47 inside the via holes.
  • the terminal pads 44 are formed on the interlayer insulating layers 35 and 36, and the pads 48 are formed on the interlayer insulating layers 35 and 36.
  • solder resist layers 50 and 51 are formed by applying a photosensitive epoxy resin on the interlayer insulating layers 35 and 36.
  • exposure and development are performed in a state where a predetermined mask is disposed, and openings 40 and 46 are formed in the solder resist layers 50 and 51.
  • solder bumps 45 are formed on the terminal pads 44, and solder bumps 49 are formed on the pads 48.
  • the product in this state is a multi-cavity wiring board in which a plurality of product regions to be the wiring board 10 are arranged vertically and horizontally along the plane direction. Furthermore, when the multi-cavity wiring board is divided, a large number of wiring boards 10 which are individual products can be obtained simultaneously. *
  • the IC chip 21 is placed in the IC chip mounting region 23 of the main surface side buildup layer 31 constituting the wiring board 10.
  • the surface connection terminals 22 on the IC chip 21 side and the respective solder bumps 45 are aligned.
  • each solder bump 45 is reflowed by heating to a temperature of about 220 ° C. to 240 ° C., thereby joining each solder bump 45 and the surface connection terminal 22 to electrically connect the wiring substrate 10 side and the IC chip 21 side. Connect.
  • the IC chip 21 is mounted in the IC chip mounting area 23 (see FIG. 1). *
  • the resin filler 211 is interposed between the back side conductor layer 206 and the adhesive tape 210. May sink and cause a problem in the adhesion between the back-side buildup layer formed on the core back surface 202 side and the back-side conductor layer 206. Therefore, in the wiring substrate 10 of this embodiment, the back surface side conductor layer 81 is formed so as to surround the bridge portion 61, and the back surface side conductor layer 81 is not formed in the bridge portion 61.
  • the raised portion of the resin filler 93 is hardly formed on the core back surface 13 side of the bridge portion 61. Therefore, the surface 39 of the back surface side buildup layer 32 (solder resist layer 51) in contact with the core back surface 13 can be flattened, and the dimensional accuracy of the back surface side buildup layer 32 is improved.
  • the contact area is increased and the adhesion strength between the two is increased, and the adhesion strength between the resin filler 93 and the interlayer insulating layer 33 constituting the main surface side buildup layer 31 is increased.
  • the core substrate 11 and the main surface side buildup layer 31 come into close contact with each other more reliably. Therefore, the occurrence of delamination and the like can be prevented, so that the wiring board 10 with even higher reliability can be obtained.
  • the two chip capacitors 100 and 101 are disposed immediately below the IC chip 21 mounted in the IC chip mounting region 23. For this reason, the wiring connecting the chip capacitors 100 and 101 and the IC chip 21 is shortened, and an increase in the inductance component of the wiring is prevented. Therefore, the switching noise of the IC chip 21 due to the chip capacitors 100 and 101 can be surely reduced, and the power supply voltage can be reliably stabilized. Further, since noise entering between the IC chip 21 and each of the chip capacitors 100 and 101 can be suppressed to a very low level, high reliability can be obtained without causing problems such as malfunctions. *
  • the accommodation hole parts 90 and 91 of the said 1st Embodiment were substantially elliptical holes in planar view.
  • the receiving holes 222 and 223 may be holes having a substantially square shape in plan view in which the four corners have a curved shape in plan view.
  • the back-side conductor layer 225 formed on the core back surface 224 has a pair of overhang portions 228 that protrude from the open end of the through hole 226 toward the bridge portion 227, and both overhangs It is preferable that the tip of the portion 228 has a curved surface shape in plan view. *
  • the main surface side conductor layer 71 of the first embodiment is formed only on the core main surface 12 of the outer peripheral portion 62, and is not formed on the core main surface 12 of the bridge portion 61.
  • the back-side conductor layer 81 of the first embodiment is formed only on the core back surface 13 of the outer peripheral portion 62 and is not formed on the core back surface 13 of the bridge portion 61.
  • the main surface side conductor layer 71 may be formed on the core main surface 12 of the bridge portion 61 in addition to the core main surface 12 of the outer peripheral portion 62. *
  • the chip capacitors 100 and 101 are accommodated in the two accommodation holes 90 and 91, respectively.
  • three or more accommodation holes are provided in the core substrate 11, and each of the accommodation holes is provided.
  • a chip capacitor may be accommodated.
  • the chip capacitors 100 and 101 are used as components accommodated in the accommodation holes 90 and 91.
  • a via array type ceramic capacitor 301 may be used as a component housed in the housing holes 90 and 91.
  • the ceramic capacitor 301 has a structure in which power supply internal electrode layers 303 and ground internal electrode layers 304 are alternately stacked via ceramic dielectric layers 302.
  • via conductors 307 and 308 are formed in the ceramic capacitor 301 so as to communicate between the capacitor main surface 305 (component main surface) and the capacitor back surface 306 (component back surface).
  • the power supply via conductor 307 passes through each of the power supply internal electrode layers 303 and electrically connects them to each other.
  • the ground via conductor 308 passes through each ground internal electrode layer 304 and electrically connects them to each other.
  • the via conductors 307 and 308 are arranged in an array as a whole.
  • a main surface side power supply electrode 309 and a main surface side ground electrode 310 are projected.
  • the main surface side power supply electrode 309 is connected to the end of the power supply via conductor 307 on the capacitor main surface 305 side
  • the main surface side ground electrode 310 is connected to the ground via conductor 308 on the capacitor main surface 305 side. Connected to the end.
  • a back surface side power supply electrode 311 and a back surface side ground electrode 312 are projected.
  • the back side power supply electrode 311 is connected to the end of the power supply via conductor 307 on the capacitor back side 306 side, and the back side ground electrode 312 is connected to the end of the ground via conductor 308 on the capacitor back side 306 side.
  • an IC chip, DRAM, SRAM, a register, or the like may be used as a component accommodated in the accommodation holes 90 and 91.
  • the gap between the inner wall surface 92 of the accommodation hole 90, 91 and the capacitor side surface 104 of the chip capacitor 100, 101 is filled with the resin filler 93.
  • the gap between the inner wall surface 323 of the accommodation hole portions 321 and 322 and the capacitor side surface 326 (component side surface) of the chip capacitors 324 and 325 (component) is formed on the main surface side build.
  • the interlayer insulating layer 328 constituting the up layer 327 may be partly filled. That is, the interlayer insulating layer 328 may have a function as a resin filler. *
  • two chip capacitors 100 and 101 are electrically connected to one IC chip 21.
  • two IC chips may be mounted in the IC chip mounting region set in the main surface side buildup layer 31, and the two chip capacitors 100 and 101 may be electrically connected to each IC chip.
  • the core board 331 provided in the component built-in wiring board 330 (hereinafter referred to as “wiring board 330”) of the present embodiment is provided on both the core main surface 332 side and the core back surface 333 side. It has two receiving hole portions 334 and 335 that are open.
  • the core substrate 331 includes a bridge portion 336 positioned between the adjacent accommodation hole portions 334 and 335, and an outer peripheral portion 337 surrounding each of the accommodation hole portions 334 and 335 and the bridge portion 336.
  • the main surface side conductor layer 341 made of copper is formed on the core main surface 332 of the outer peripheral portion 337, and the core back surface 333 of the outer peripheral portion 337 is made of copper.
  • a back side conductor layer 351 is formed.
  • the back surface side conductor layer 351 has one through hole 352 that exposes the core back surface 333 side opening of each of the receiving hole portions 334 and 335 and exposes the core back surface 333 side of the bridge portion 336.
  • the back-side conductor layer 351 is a 35 ⁇ m-thick plain conductor formed only on the core back surface 333 of the outer peripheral portion 337, and is not formed on the core back surface 333 of the bridge portion 336.
  • the opening end of the through hole 352 is positioned on the outer peripheral side with respect to the opening ends of the accommodation hole portions 334 and 335.
  • the back-side conductor layer 351 includes a pair of protruding portions 353 that are extended from the opening end of the through hole 352 toward the bridge portion 336.
  • the two overhang portions 353 are located on opposite sides of the opening end of the through hole 352 and project in a direction approaching each other.
  • projection parts 353 has curved shape by planar view. *
  • the main surface side conductor layer 341 has substantially the same structure as the back surface side conductor layer 351 described above. That is, as shown in FIGS. 24, 26, 27, and 35, the main surface side conductor layer 341 exposes the core main surface 332 side opening of each of the receiving hole portions 334, 335 and the core of the bridge portion 336. It has one through hole 342 that exposes the main surface 332 side.
  • the main surface side conductor layer 341 is a 35 ⁇ m thick plain conductor formed only on the core main surface 332 of the outer peripheral portion 337, and is not formed on the core main surface 332 of the bridge portion 336.
  • the opening end of the through hole 342 is located on the outer peripheral side with respect to the opening ends of the accommodation hole portions 334 and 335.
  • the main surface side conductor layer 341 includes a pair of protruding portions 343 that are extended from the opening end of the through hole 342 toward the bridge portion 336. Both projecting portions 343 are located on opposite sides of the opening end of the through hole 342 and project in a direction approaching each other. And the front-end
  • projection parts 343 has curved shape by planar view. *
  • each back-side island layer 241 has an elliptical shape in plan view with a major axis of 0.6 mm, a minor axis of 0.1 mm, and a thickness of 35 ⁇ m.
  • Each back-side island layer 241 has an elongated shape extending in parallel with an imaginary line L1 (see FIG. 25) connecting the centers C1, C2 (see FIG. 25) of the adjacent accommodation holes 334, 335, and in plan view. It has a curved shape (shape with roundness).
  • Each back-side island layer 241 is independent from the back-side conductor layer 351 and protrudes to the same height (thickness) as the surface of the back-side conductor layer 351. And the front end surface of each back surface island-like layer 241 is in contact with the interlayer insulating layer 364 constituting the back surface side buildup layer 362 (wiring laminated portion). Further, the back-side island layers 241 are arranged at equal intervals in the direction orthogonal to the virtual line L1. A region between the adjacent backside island-like layers 241 and a region between the adjacent overhanging portion 353 and the backside island-like layer 241 form a slit shape. Note that the minimum value of the size of the gap S1 (see FIGS. 25 and 27) between the adjacent backside island layers 241 and the overhanging portion 353 (backside conductor layer 351) and the backside island layer 241 The minimum value of the size of the gap S2 (see FIGS. 25 and 27) is 35 ⁇ m.
  • each main surface side island-like layer 231 has substantially the same structure as the above-described back surface island layer 241. That is, each main surface side island-like layer 231 has an elliptical shape in plan view with a major axis of 0.6 mm ⁇ minor axis of 0.1 mm ⁇ thickness of 35 ⁇ m.
  • Each main-surface-side island-like layer 231 has an elongated shape extending in parallel with the imaginary line L1 and has a curved shape (a shape having a roundness) in plan view.
  • Each main surface side island-like layer 231 is independent from the main surface side conductor layer 341 and protrudes to the same height (thickness) as the surface of the main surface side conductor layer 341.
  • the leading end surface of each main surface side island layer 231 is in contact with the interlayer insulating layer 363 constituting the main surface side buildup layer 361.
  • the main surface side island layers 231 are arranged at equal intervals in the direction orthogonal to the virtual line L1. A region between the adjacent main surface side island layers 231 and a region between the adjacent overhanging portion 343 and the main surface side island layers 231 form a slit shape.
  • the minimum value of the size of the gap between adjacent main surface side island layers 231 and the size of the gap between the projecting portion 343 (main surface side conductor layer 341) and the main surface side island layers 231 are as follows.
  • the minimum value is 35 ⁇ m for each.
  • a gap between the capacitor 371 (component) and the capacitor side surface 372 is filled with a resin filler 367 made of a polymer material (in this embodiment, an epoxy resin which is a thermosetting resin).
  • a gap with the interlayer insulating layer 364 constituting the 362 is filled with a part of the resin filler 367.
  • the gap between the main surface side conductor layer 341 and the main surface side island layer 231 and the gap S2 between the back surface side conductor layer 351 and the back surface side island layer 241 are filled with a part of the resin filler 367. It has been.
  • the size of the gap between the inner wall surface 338 of the receiving hole portions 334 and 335 and the capacitor side surface 372 of the chip capacitors 370 and 371 is set to about 1 mm.
  • the thickness of the portion pasted on the core main surface 332 of the bridge portion 336 in the resin filler 367 and the thickness of the portion pasted on the core back surface 333 of the bridge portion 336 in the resin filler 367. is set to 35 ⁇ m.
  • a core substrate preparation process, a conductor layer forming process, an island-shaped layer forming process, a housing process, a filling process, a wiring laminated portion forming process, and the like are different from the first embodiment.
  • the copper foil 392 that becomes the main surface side conductor layer 341 and the main surface side island-like layer 231 is attached to the core main surface 332 of the base material 391, and the core back surface of the base material 391.
  • a copper-clad laminate 390 (see FIG. 28) is prepared by attaching a copper foil 392 (metal foil) to be the back-side conductor layer 351 and the back-side island-like layer 241 to 333, and this is used as an intermediate product of the core substrate 331.
  • the main surface side conductor layer 341 is formed on the core main surface 332 of the outer peripheral portion 337 and the back surface side conductor layer 351 is formed on the core back surface 333 of the outer peripheral portion 337.
  • the island layer forming step after the accommodation hole forming step a plurality of main surface side island layers 231 are formed on the core main surface 332 of the bridge portion 336, and a plurality of back surfaces are formed on the core back surface 333 of the bridge portion 336.
  • a side island layer 241 is formed. Specifically, the same plating layers 381, 382, and 383 as the plating layers 162, 163, and 164 of the first embodiment are etched, and the plating layers 381 to 383 are patterned by, for example, a subtractive method. *
  • a resist forming step is performed, on the surface of the plating layer 383 on the core main surface 332 side, and on the surface of the plating layer 383 on the core back surface 333 side.
  • a dry film is laminated respectively.
  • a plating resist 386 having an opening 384 and a covering portion 385 is formed (see FIGS. 29 and 30).
  • the plating layers formed on the core main surface 332 of the respective housing hole parts 334, 335, the bridge part 336, and the outer peripheral part 337 is performed from the opening part 384 of the plating resist 386 formed on the core main surface 332 side.
  • the covering portion 385 of the plating resist 386 formed on the core main surface 332 side covers a portion that becomes the main surface side island layer 231 on the core main surface 332 of the bridge portion 336.
  • the opening 384 of the plating resist 386 formed on the core back surface 333 side each of the receiving hole portions 334 and 335, the bridge portion 336, and the plating layer 383 formed on the core back surface 333 of the outer peripheral portion 337. Some are exposed.
  • the covering portion 385 of the plating resist 386 formed on the core back surface 333 side covers a portion to be the back surface island layer 241 on the core back surface 333 of the bridge portion 336.
  • a metal foil removing process is performed, and the copper foil 392 and the plating layers 381 to 383 are etched by etching the portions of the plating layers 381 to 383 that are exposed from the openings 384 and are on the outer peripheral side of the covering portion 385. Are partially removed (see FIGS. 31 and 32).
  • a resist removing step is performed, and the plating resist 386 is peeled (removed).
  • the main surface side conductor layer 341 and the main surface side island layer 231 are formed on the core main surface 332, and the back surface side conductor layer 351 and the back surface side island layer 241 are formed on the core back surface 333. (See FIGS. 31 and 32).
  • a part of the plating layer 383 on the core main surface 332 side becomes a lid plating layer covering the end surface on the core main surface 332 side of the through-hole conductor 387, and a part of the plating layer 383 on the core back surface 333 side is a through-hole.
  • This is a lid plating layer that covers the end surface of the hole conductor 387 on the core back surface 333 side.
  • the opening on the core back surface 333 side of each housing hole 334, 335 is sealed with a peelable adhesive tape 388 (FIG. 33).
  • the adhesive surface of the adhesive tape 388 is in close contact with the back-side conductor layer 351 formed on the core back surface 333 of the outer peripheral portion 337 and the back-side island layer 241 formed on the core back surface 333 of the bridge portion 336. It will be in the state.
  • the adhesive tape 388 is supported by a support table (not shown).
  • the core main surface 332 and the capacitor main surface 373 are directed to the same side, and the core back surface 333 and the capacitor back surface 374 (component back surface) ) Are directed to the same side, and the chip capacitors 370 and 371 are accommodated in the receiving holes 334 and 335, respectively (see FIGS. 34 and 35).
  • the chip capacitors 370 and 371 are temporarily fixed by attaching the capacitor back surface 374 side to the adhesive surface of the adhesive tape 388.
  • a dispenser device is provided in the gap between the inner wall surface 338 of the accommodation hole 334 and the capacitor side surface 372 of the chip capacitor 370 and the gap between the inner wall surface 338 of the accommodation hole 335 and the capacitor side surface 372 of the chip capacitor 371.
  • a resin filler 367 manufactured by NAMICS Co., Ltd.
  • the gap between the main surface side conductor layer 341 and the main surface side island layer 231 is partially filled with the resin filler 367, and the gap S2 between the back surface side conductor layer 351 and the back surface side island layer 241.
  • each main surface side island-like layer 231 extends along the direction in which the resin filler 367 flows into the gap between the main surface side conductor layer 341 and the main surface side island-like layer 231 in the filling step.
  • the material 367 smoothly flows into the gap between the main surface side conductor layer 341 and the main surface side island layer 231.
  • each back-side island layer 241 extends along the direction in which the resin filler 367 flows into the gap S2 between the back-side conductor layer 351 and the back-side island layer 241 in the filling step, and thus the resin filler 367. Smoothly flows into the gap S2 between the back-side conductor layer 351 and the back-side island layer 241.
  • the chip capacitors 370 and 371 are fixed in the accommodation holes 334 and 335 by curing the resin filler 367. Then, after the fixing step, the adhesive tape 388 is peeled (removed). Thereafter, the surfaces of the conductor layers 341 and 351, the surfaces of the island layers 231 and 241, the surface 368 of the resin filler 367 filled in the gap between the main surface side conductor layer 341 and the main surface side island layer 231, and The surface 369 of the resin filler 367 filled in the gap S2 between the back side conductor layer 351 and the back side island layer 241 is roughened.
  • an interlayer insulating layer 363 is formed by applying a thermosetting epoxy resin (see FIG. 37). Further, by applying a thermosetting epoxy resin on the surface 369 of the resin filler 367 and the capacitor back surface 374 filled in the gap S2 between the back-side conductor layer 351 and the back-side island-like layer 241, the interlayer An insulating layer 364 is formed (see FIG. 37).
  • the main surface side buildup layer 361 is formed on the core main surface 332, and the core back surface 333 is formed.
  • a backside build-up layer 362 is formed thereon, and a multi-piece wiring board is obtained in which a plurality of product regions to be the wiring board 330 are arranged vertically and horizontally along the plane direction. Furthermore, when the multi-piece wiring board is divided, a large number of wiring boards 330 which are individual products can be obtained simultaneously.
  • the back side conductor layer 206 is formed on the entire core back side 202 of the core substrate 204, the gap between the back side conductor layer 206 and the adhesive tape 210 is increased.
  • the resin filler 211 may sink and cause a problem in the adhesion between the back-side buildup layer and the back-side conductor layer 206 formed on the core back surface 202 side. Therefore, in the wiring board 330 of this embodiment, the back surface side conductor layer 351 is formed so as to surround the bridge portion 336, and the back surface side island-like layer 241 independent of the back surface side conductor layer 351 is formed in the bridge portion 336. ing.
  • a part of the resin filler 367 filled in the gap between the inner wall surface 338 of the accommodation hole portions 334 and 335 and the capacitor side surface 372 of the chip capacitors 370 and 371 is a gap between the adjacent backside island layers 241.
  • S1 (see FIGS. 25 and 27) and the gap S2 (see FIGS. 25 and 27) between the back-side conductor layer 351 and the back-side island layer 241 (see FIG. 25 and FIG. 27) flow, so that the above-described sinking occurs. It becomes difficult to do. Therefore, since the core substrate 331 and the back-side buildup layer 362 come into close contact with each other, the wiring substrate 330 with excellent reliability can be obtained.
  • a wiring pattern island layer
  • the opening on the core rear surface 333 side of the accommodation hole 334 is closed with the adhesive tape 388, and the back side conductor layer 351 and the bridge portion formed on the core back surface 333 of the outer peripheral portion 337 This is performed in a state where the adhesive surface is in close contact with the back-side island layer 241 formed on the core back surface 333 of 336. Therefore, in the housing process, the capacitor back surface 374 side of the chip capacitors 370 and 371 is affixed to the adhesive surface of the adhesive tape 388 and temporarily fixed, and the capacitor back surface side ends of the electrodes 375 and 376 included in the respective chip capacitors 370 and 371 are provided.
  • the surfaces of the portions 377 and 378 are flush with the surface of the back-side conductor layer 351 formed on the core back surface 333.
  • the adhesive tape 388 is supported by the back-side island layer 241, the adhesive tape 388 is prevented from being bent, and thus the chip capacitors 370 and 371 attached to the adhesive surface of the adhesive tape 388 are prevented. A decrease in position accuracy is prevented. Therefore, the surface 360 of the back-side buildup layer 362 that is in contact with the capacitor back-side 374 side and the surface of the back-side conductor layer 351 can be flattened, so that the dimensional accuracy of the wiring board 330 is improved.
  • the wiring pattern (back surface side island layer 241) is formed on the core back surface 333 of the bridge portion 336, the wiring pattern (back surface side conductor layer 351, back surface side island layer 241) and A contact area with the interlayer insulating layer 364 constituting the back-side buildup layer 362 is ensured, and the adhesion strength between them is increased. As a result, the core substrate 331 and the back surface side build-up layer 362 are surely adhered to each other.
  • the wiring pattern (main surface side island layer 231) is also formed on the core main surface 332 of the bridge portion 336, the wiring pattern (main surface side conductor layer 341, main surface side island shape)
  • the contact area between the layer 231) and the interlayer insulating layer 363 constituting the main surface side buildup layer 361 is ensured, and the adhesion strength between them is increased.
  • the core substrate 331 and the main surface side build-up layer 361 come into close contact with each other. Therefore, the occurrence of delamination and the like can be prevented, so that the wiring board 330 with even higher reliability can be obtained.
  • the amount of the resin filler 367 that flows into the gap between the surface of the bridge portion 336 and the build-up layers 361 and 362 is equivalent to the amount of the wiring pattern provided on the surface of the bridge portion 336 (core main surface 332 and core back surface 333). Since it can reduce, the manufacturing cost of the wiring board 330 can be held down.
  • the accommodation hole parts 334 and 335 of the said 2nd Embodiment were holes of a substantially elliptical shape in planar view.
  • the receiving hole portions 292 and 293 may be holes having a substantially square shape in plan view in which the four corners have a curved shape in plan view.
  • the back-side island layer 241 has an elliptical shape in plan view.
  • the island layer may be, for example, a back side island layer 253 having a rectangular shape in plan view, or a back surface having a circular shape in plan view.
  • the side island layer 254 may be used.
  • the core back surface 263 of the bridge portion 262 has a plurality of types of island-like layers (here, the back-side island-like layer 264 having a rectangular shape in plan view and a cross-like shape in plan view).
  • the back-side island-like layer 265) may be formed. *
  • a through-hole conductor 275 that penetrates the core main surface 273 and the core back surface 274 may be formed in the bridge portion 272.
  • the main-surface-side island layer 276 serves as a pad that is electrically connected to the end of the through-hole conductor 275 on the core main surface 273 side
  • the back-surface-side island-shaped layer 277 is the core back surface 274 of the through-hole conductor 275.
  • the pad is electrically connected to the side end.
  • the back surface side island-like layer 284 is not formed, and an opening is opened in the core back surface 283 and communication between adjacent accommodation holes is performed.
  • a concave portion 285 may be provided. In this way, the resin filler 286 flows into the recess 285 in addition to the gap between the adjacent backside island layers 284 and the gap between the backside conductor layer and the backside island layer 284 ( Therefore, the above-described diving is more unlikely to occur.
  • the back-side island layer 241 is formed on the core back surface 333 of the bridge portion 336, and the main surface-side island layer 231 is formed on the core main surface 332 of the bridge portion 336.
  • the main surface side island-like layer 231 may not be formed (see FIG. 44).
  • the main surface side conductor layer 341 may be formed on the core main surface 332 of the bridge portion 336 in addition to the core main surface 332 of the outer peripheral portion 337.
  • the chip capacitors 370 and 371 are accommodated in the two accommodation holes 334 and 335, respectively. It is possible to change to a form in which one or more accommodation holes are provided and the chip capacitors are accommodated in the respective accommodation holes (see FIG. 41). *
  • the chip capacitors 370 and 371 similar to the said 1st Embodiment were used as components accommodated in the accommodation holes 334 and 335.
  • the via array type ceramic capacitor 301 shown in FIG. 22 can be used as a component accommodated in the accommodation holes 334 and 335.
  • the same configuration as in the first embodiment that is, the gap between the inner wall surface 338 of the receiving hole portions 334 and 335 and the capacitor side surface 372 of the chip capacitors 370 and 371 is formed by the resin filler 367.
  • the gap between the inner wall surface 403 of the accommodation holes 401 and 402 and the capacitor side surface 406 (component side surface) of the chip capacitors 404 and 405 (component) is formed on the main surface side build.
  • the interlayer insulating layer 408 constituting the up layer 407 may be partly filled. That is, the interlayer insulating layer 408 may have a function as a resin filler.
  • two chip capacitors 370 and 371 are electrically connected to one IC chip 409.
  • two IC chips may be mounted on the IC chip mounting area 410 set in the main surface side buildup layer 361, and the two chip capacitors 370 and 371 may be electrically connected to each IC chip.
  • the back-side conductor layer is formed on the core back surface of the outer peripheral portion, but is not formed on the core back surface of the bridge portion.
  • the back surface side conductor layer has one through hole that exposes the core back surface side opening of the plurality of receiving holes and exposes the core back surface of the bridge portion,

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

By preventing decreased adhesion between a core substrate and a wiring laminate unit, a wiring board with embedded components that has excellent reliability is provided. This wiring board with embedded components (10) is provided with a core substrate (11), components (100, 101), a resin filling material (93) and a wiring laminate unit (32). The components (100, 101) are housed in housing cavities (90, 91, respectively) in a state in which the core primary surface (12) and the component primary surface (102) are oriented in the same direction. The resin filling material (93) is filled into the gaps between lateral component surfaces (104) and inner wall surfaces (92) of the housing cavities (90, 91). Further, the core substrate (11) is provided with a bridge unit (61) positioned between adjacent housing cavities (90, 91), and with outer periphery units (62) on which a back-side conductor layer (81) is formed. The width of the bridge unit (61) is less than the total width of an outer peripheral unit (62) and a back-side conductor layer (81). The gap between the surface of the bridge unit (61) and the wiring laminate unit (32) is filled in with a portion of the resin filling material (93).

Description

部品内蔵配線基板及びその製造方法Component built-in wiring board and manufacturing method thereof

 本発明は、内部にコンデンサなどの部品が収容されている部品内蔵配線基板及びその製造方法に関するものである。 The present invention relates to a component built-in wiring board in which components such as capacitors are accommodated and a method for manufacturing the same.

 コンピュータのマイクロプロセッサ等として使用される半導体集積回路素子(ICチップ)は、近年ますます高速化、高機能化しており、これに付随して端子数が増え、端子間ピッチも狭くなる傾向にある。一般的にICチップの底面には多数の端子が密集してアレイ状に配置されており、このような端子群はマザーボード側の端子群に対してフリップチップの形態で接続される。但し、ICチップ側の端子群とマザーボード側の端子群とでは端子間ピッチに大きな差があることから、ICチップをマザーボード上に直接的に接続することは困難である。そのため、通常は、ICチップをICチップ搭載用配線基板上に搭載してなるパッケージを作製し、そのパッケージをマザーボード上に搭載するという手法が採用される。また、この種のパッケージを構成するICチップ搭載用配線基板においては、ICチップのスイッチングノイズの低減や電源電圧の安定化を図るために、コンデンサを設けることが提案されている。その一例として、コア基板内にコンデンサを埋め込むとともに、コア基板のコア主面及びコア裏面に層間絶縁層及び導体層を積層してなるビルドアップ層を形成した配線基板が従来提案されている(例えば特許文献1,2参照)。 In recent years, semiconductor integrated circuit elements (IC chips) used as computer microprocessors and the like have become increasingly faster and more functional, with an accompanying increase in the number of terminals and a tendency to narrow the pitch between terminals. . In general, a large number of terminals are densely arranged on the bottom surface of an IC chip, and such a terminal group is connected to a terminal group on the motherboard side in the form of a flip chip. However, it is difficult to connect the IC chip directly on the mother board because there is a large difference in the pitch between the terminals of the terminal group on the IC chip side and the terminal group on the mother board side. For this reason, a method is usually employed in which a package is formed by mounting an IC chip on an IC chip mounting wiring board, and the package is mounted on a motherboard. In addition, it has been proposed to provide a capacitor in an IC chip mounting wiring board constituting this type of package in order to reduce switching noise of the IC chip and stabilize the power supply voltage. As an example, a wiring board in which a capacitor is embedded in a core substrate and a buildup layer formed by laminating an interlayer insulating layer and a conductor layer on the core main surface and the core back surface of the core substrate has been conventionally proposed (for example, (See Patent Documents 1 and 2).

また、上記したICチップ搭載用配線基板として、コア基板内に複数のコンデンサを埋め込んだ配線基板が提案されている。上記の配線基板の製造方法の一例を以下に説明する。まず、コア主面201及びコア裏面202の両方にて開口する収容穴部203を複数有する樹脂材料製のコア基板204を準備する(図45参照)。なお、コア主面201の略全体には主面側導体層205が形成され、コア裏面202の略全体には裏面側導体層206が形成されている。併せて、コンデンサ主面207及びコンデンサ裏面208を有するコンデンサ209(図45,図46参照)を準備する。次に、コア裏面202側に粘着テープ210を貼り付けるテーピング工程を行い、収容穴部203のコア裏面202側の開口をあらかじめシールする。そして、複数の収容穴部203内にそれぞれコンデンサ209を収容する収容工程を行い、各コンデンサ209のコンデンサ裏面208を粘着テープ210の粘着面に貼り付けて仮固定する(1を図45参照)。次に、収容穴部203の内壁面とコンデンサ209の側面との隙間A1に樹脂充填材21充填する充填工程を行った後、樹脂充填材211を硬化収縮させることにより、コンデンサ209を固定する(図46参照)。そして、粘着テープ210を剥離した後、コア主面201側に対して、層間絶縁層及び導体層を交互に積層して主面側ビルドアップ層を形成するとともに、コア裏面202側に対して、層間絶縁層及び導体層を交互に積層して裏面側ビルドアップ層を形成する。その結果、所望の配線基板が得られる。 Further, as the above-described IC chip mounting wiring board, a wiring board in which a plurality of capacitors are embedded in a core board has been proposed. An example of the method for manufacturing the wiring board will be described below. First, a core substrate 204 made of a resin material having a plurality of accommodation holes 203 that are open on both the core main surface 201 and the core back surface 202 is prepared (see FIG. 45). A main surface side conductor layer 205 is formed on substantially the entire core main surface 201, and a back surface side conductor layer 206 is formed on almost the entire core back surface 202. In addition, a capacitor 209 (see FIGS. 45 and 46) having a capacitor main surface 207 and a capacitor back surface 208 is prepared. Next, a taping step of attaching the adhesive tape 210 to the core back surface 202 side is performed, and the opening of the housing hole 203 on the core back surface 202 side is sealed in advance. And the accommodation process which accommodates the capacitor | condenser 209 in each of the some accommodation hole part 203 is performed, and the capacitor | condenser back surface 208 of each capacitor | condenser 209 is affixed on the adhesive surface of the adhesive tape 210, and is temporarily fixed (refer FIG. 45). Next, after performing a filling step of filling the resin filler 21 into the gap A1 between the inner wall surface of the accommodation hole 203 and the side surface of the capacitor 209, the capacitor 209 is fixed by curing and shrinking the resin filler 211 ( (See FIG. 46). And after peeling off the adhesive tape 210, while alternately laminating interlayer insulation layers and conductor layers on the core main surface 201 side, and forming a main surface side buildup layer, on the core back surface 202 side, Interlayer insulating layers and conductor layers are alternately laminated to form a back side buildup layer. As a result, a desired wiring board is obtained.

特開2011-216740号公報(図1等)JP 2011-216740 A (FIG. 1 etc.) 特開2013-183029号公報(図1等)JP 2013-183029 A (FIG. 1 etc.)

ところが、コア基板204内に埋め込まれるコンデンサ209の数が多くなると、これに伴って、隣接する収容穴部203間に存在するコア基板204のブリッジ部212の幅が小さくなり、ブリッジ部212のコア裏面202に形成された裏面側導体層206の幅も小さくなる。その結果、裏面側導体層206と粘着テープ210との間の密着力が低下するため、上記の樹脂充填材211を隙間A1に充填する際に、樹脂充填材211の一部が裏面側導体層206と粘着テープ210との間(図47の隙間A2参照)に潜り込む可能性がある。この場合、ブリッジ部212に形成された裏面側導体層206が樹脂充填材211に覆われてしまい、裏面側導体層206の表面全体の粗化ができなくなる。また、ブリッジ部212のコア裏面202側に樹脂充填材211の盛り上がり部分が形成されてしまう。その結果、コア裏面202側に層間絶縁層を形成したとしても、層間絶縁層を裏面側導体層206の表面に対して確実に密着させることができなくなる。ゆえに、層間絶縁層と裏面側導体層206との密着性に問題が生じ、層間絶縁層のデラミネーションが発生しやすくなるため、製造される配線基板が不良品となり、配線基板の信頼性が低下するおそれがある。  However, as the number of capacitors 209 embedded in the core substrate 204 increases, the width of the bridge portion 212 of the core substrate 204 existing between the adjacent accommodation holes 203 decreases accordingly, and the core of the bridge portion 212 is reduced. The width of the back side conductor layer 206 formed on the back side 202 is also reduced. As a result, since the adhesive force between the back surface side conductor layer 206 and the adhesive tape 210 is reduced, when the resin filler 211 is filled in the gap A1, a part of the resin filler 211 is back surface side conductor layer. There is a possibility of sinking between 206 and the adhesive tape 210 (see the gap A2 in FIG. 47). In this case, the back side conductor layer 206 formed on the bridge portion 212 is covered with the resin filler 211, and the entire surface of the back side conductor layer 206 cannot be roughened. Further, a rising portion of the resin filler 211 is formed on the core back surface 202 side of the bridge portion 212. As a result, even if an interlayer insulating layer is formed on the core back surface 202 side, the interlayer insulating layer cannot be securely adhered to the surface of the back-side conductor layer 206. Therefore, a problem arises in the adhesion between the interlayer insulating layer and the back-side conductor layer 206, and delamination of the interlayer insulating layer is likely to occur. Therefore, the manufactured wiring board becomes defective and the reliability of the wiring board is lowered. There is a risk. *

本発明は上記の課題に鑑みてなされたものであり、その目的は、コア基板と配線積層部との密着力の低下を防止することにより、信頼性に優れた部品内蔵配線基板及びその製造方法を提供することにある。 The present invention has been made in view of the above-described problems, and an object of the present invention is to prevent a reduction in the adhesion between the core substrate and the wiring laminated portion, and to provide a component-embedded wiring substrate excellent in reliability and a method for manufacturing the same. Is to provide.

そして、上記課題を解決するための手段(手段1)としては、コア主面及びコア裏面を有し、前記コア主面側及び前記コア裏面側の両方にて開口する収容穴部を複数有するコア基板と、部品主面、部品裏面及び部品側面を有し、前記コア主面と前記部品主面とを同じ側に向けた状態で複数の前記収容穴部にそれぞれ収容された複数の部品と、前記コア基板に形成された前記収容穴部の内壁面と前記部品側面との隙間に充填された樹脂充填材と、層間絶縁層及び導体層を前記コア裏面上及び前記部品裏面上にて積層した構造を有する配線積層部とを備える部品内蔵配線基板であって、前記コア基板は、隣接する前記収容穴部間に位置するブリッジ部と、複数の前記収容穴部及び前記ブリッジ部を取り囲む裏面側導体層が前記コア裏面に形成された外周部とを有し、前記ブリッジ部の厚さが、前記外周部と前記裏面側導体層との合計の厚さよりも薄くなっており、前記ブリッジ部の表面と前記配線積層部との隙間が、前記樹脂充填材の一部で埋められていることを特徴とする部品内蔵配線基板がある。  And as a means (means 1) for solving the said subject, it has a core main surface and a core back surface, and has a core which has two or more accommodation holes opened on both the core main surface side and the core back surface side. A plurality of components each having a substrate, a component main surface, a component back surface, and a component side surface, each of which is accommodated in the plurality of accommodating hole portions in a state in which the core main surface and the component main surface are directed to the same side; A resin filler filled in a gap between the inner wall surface of the housing hole formed in the core substrate and the side surface of the component, and an interlayer insulating layer and a conductor layer were laminated on the core back surface and the component back surface. A wiring board with a built-in component including a wiring laminated portion having a structure, wherein the core substrate includes a bridge portion positioned between adjacent accommodation hole portions, a plurality of the accommodation hole portions, and a back surface side surrounding the bridge portions. A conductor layer is formed on the back surface of the core. And the thickness of the bridge portion is thinner than the total thickness of the outer periphery portion and the back side conductor layer, and the gap between the surface of the bridge portion and the wiring laminate portion is There is a wiring board with a built-in component, which is filled with a part of the resin filler. *

コア基板のコア裏面全体に裏面側導体層が形成されている場合、樹脂充填材を用いて部品を固定する際に、ブリッジ部に形成された裏面側導体層と配線積層部との間に樹脂充填材が潜り込んでしまい、配線積層部と裏面側導体層との密着性に問題が生じるおそれがある。そこで、上記手段1の部品内蔵配線基板では、ブリッジ部を取り囲むように裏面側導体層を形成し、ブリッジ部には裏面側導体層を形成しないようにしている。この場合、ブリッジ部の表面と配線積層部との隙間が、樹脂充填材の一部で埋められるため、上記した潜り込みが発生しにくくなる。ゆえに、コア基板と配線積層部とが確実に密着するようになるため、信頼性に優れた部品内蔵配線基板を得ることができる。  When the back side conductor layer is formed on the entire core back side of the core substrate, the resin is interposed between the back side conductor layer formed on the bridge part and the wiring laminated part when fixing the component using the resin filler. There is a possibility that the filler may sink and cause a problem in the adhesion between the wiring laminated portion and the back side conductor layer. Therefore, in the component built-in wiring board of the above means 1, the back surface side conductor layer is formed so as to surround the bridge portion, and the back surface side conductor layer is not formed in the bridge portion. In this case, since the gap between the surface of the bridge portion and the wiring laminated portion is filled with a part of the resin filler, the above-described sinking is unlikely to occur. Therefore, since the core substrate and the wiring laminated portion are brought into close contact with each other, a component built-in wiring substrate having excellent reliability can be obtained. *

また、上記課題を解決するための別の手段(手段2)としては、コア主面及びコア裏面を有し、前記コア主面側及び前記コア裏面側の両方にて開口する収容穴部を複数有するコア基板と、部品主面、部品裏面及び部品側面を有し、前記コア主面と前記部品主面とを同じ側に向けた状態で複数の前記収容穴部にそれぞれ収容された複数の部品と、前記コア基板に形成された前記収容穴部の内壁面と前記部品側面との隙間に充填された樹脂充填材と、層間絶縁層及び導体層を前記コア裏面上及び前記部品裏面上にて積層した構造を有する配線積層部とを備える部品内蔵配線基板であって、前記コア基板は、隣接する前記収容穴部間に位置するブリッジ部と、複数の前記収容穴部及び前記ブリッジ部を取り囲む裏面側導体層が前記コア裏面に形成された外周部とを有し、前記ブリッジ部の前記コア裏面に、前記裏面側導体層から独立し、かつ裏面側導体層の表面と同じ高さに突出する島状層が形成され、前記裏面側導体層と前記島状層との隙間が、前記樹脂充填材の一部で埋められていることを特徴とする部品内蔵配線基板がある。  Further, as another means (means 2) for solving the above-described problem, a plurality of receiving hole portions having a core main surface and a core back surface and opening on both the core main surface side and the core back surface side are provided. A plurality of components each having a core substrate, a component main surface, a component back surface, and a component side surface, each housed in the plurality of housing holes with the core main surface and the component main surface facing the same side And a resin filler filled in a gap between the inner wall surface of the housing hole formed in the core substrate and the side surface of the component, an interlayer insulating layer and a conductor layer on the core back surface and the component back surface A wiring board with a built-in component including a wiring laminated portion having a laminated structure, wherein the core substrate surrounds a bridge portion positioned between adjacent accommodation hole portions, a plurality of the accommodation hole portions, and the bridge portions. A back side conductor layer is formed on the back side of the core. An island-like layer that is independent of the back surface side conductor layer and protrudes at the same height as the surface of the back surface side conductor layer is formed on the back surface of the core of the bridge portion. There is a wiring board with a built-in component, wherein a gap between a conductor layer and the island layer is filled with a part of the resin filler. *

コア基板のコア裏面全体に裏面側導体層が形成されている場合、樹脂充填材を用いて部品を固定する際に、ブリッジ部に形成された裏面側導体層と配線積層部との間に樹脂充填材が潜り込んでしまい、配線積層部と裏面側導体層との密着性に問題が生じるおそれがある。そこで、上記手段2の部品内蔵配線基板では、ブリッジ部を取り囲むように裏面側導体層を形成するとともに、ブリッジ部に、裏面側導体層から独立し、かつ裏面側導体層の表面と同じ高さに突出する島状層を形成している。この場合、収容穴部の内壁面と部品の部品側面との隙間に充填された樹脂充填材の一部が、裏面側導体層と島状層との隙間に流れ込む(逃げ込む)ようになるため、上記した潜り込みが発生しにくくなる。ゆえに、コア基板と配線積層部とが確実に密着するようになるため、信頼性に優れた部品内蔵配線基板を得ることができる。  When the back side conductor layer is formed on the entire core back side of the core substrate, the resin is interposed between the back side conductor layer formed on the bridge part and the wiring laminated part when fixing the component using the resin filler. There is a possibility that the filler may sink and cause a problem in the adhesion between the wiring laminated portion and the back side conductor layer. Therefore, in the component built-in wiring board of the above means 2, the back surface side conductor layer is formed so as to surround the bridge portion, and the bridge portion is independent from the back surface side conductor layer and has the same height as the surface of the back surface side conductor layer. An island-like layer protruding to the bottom is formed. In this case, since a part of the resin filler filled in the gap between the inner wall surface of the housing hole and the part side surface of the part flows into the gap between the back side conductor layer and the island layer (runs away), The above-mentioned sinking becomes difficult to occur. Therefore, since the core substrate and the wiring laminated portion are brought into close contact with each other, a component built-in wiring substrate having excellent reliability can be obtained. *

また、上記手段1,2の部品内蔵配線基板では、上記した樹脂充填材の潜り込みが防止されることから、ブリッジ部のコア裏面側に樹脂充填材の盛り上がり部分が形成されにくくなる。よって、コア裏面に接する配線積層部の表面を平坦にすることができ、配線積層部の寸法精度が向上する。さらに、上記手段1,2の部品内蔵配線基板では、コア基板に複数の収容穴部が形成され、1つの収容穴部に1つの部品が収容されるようになっているため、それぞれの収容穴部の開口面積を大きくしなくても済む。よって、部品の搭載数を増やしつつ、コア基板の強度を確保することができる。仮に、1つの収容穴部に複数の部品を収容すると、収容穴部の開口面積が大きくなるため、コア基板の強度が低下してしまう。  Further, in the component built-in wiring boards of the means 1 and 2, since the above-described resin filler is prevented from entering, it is difficult to form a raised portion of the resin filler on the core back surface side of the bridge portion. Therefore, the surface of the wiring laminated portion in contact with the core back surface can be flattened, and the dimensional accuracy of the wiring laminated portion is improved. Furthermore, in the component built-in wiring boards of the above means 1 and 2, since a plurality of receiving hole portions are formed in the core substrate and one component is received in one receiving hole portion, It is not necessary to increase the opening area of the part. Therefore, the strength of the core substrate can be ensured while increasing the number of components mounted. If a plurality of components are accommodated in one accommodation hole, the opening area of the accommodation hole is increased, and the strength of the core substrate is reduced. *

上記部品内蔵配線基板を構成するコア基板は、コア主面及びその反対側に位置するコア裏面を有する板状に形成されており、部品を収容するための収容穴部を複数有している。コア基板を形成する材料は特に限定されないが、好適なコア基板は高分子材料を主体として形成される。コア基板を形成するための高分子材料の具体例としては、例えば、エポキシ樹脂、ポリイミド樹脂、ビスマレイミド・トリアジン樹脂、ポリフェニレンエーテル樹脂などがある。その他、これらの樹脂とガラス繊維(ガラス織布やガラス不織布)やポリアミド繊維等の有機繊維との複合材料を使用してもよい。  The core substrate constituting the component built-in wiring board is formed in a plate shape having a core main surface and a core back surface located on the opposite side, and has a plurality of receiving holes for receiving components. A material for forming the core substrate is not particularly limited, but a suitable core substrate is formed mainly of a polymer material. Specific examples of the polymer material for forming the core substrate include, for example, an epoxy resin, a polyimide resin, a bismaleimide / triazine resin, and a polyphenylene ether resin. In addition, a composite material of these resins and organic fibers such as glass fibers (glass woven fabric or glass nonwoven fabric) or polyamide fibers may be used. *

また、コア基板は、隣接する収容穴部間に位置するブリッジ部と、複数の収容穴部及びブリッジ部を取り囲む裏面側導体層がコア裏面に形成された外周部とを有している。なお、裏面側導体層は、導電性の金属材料などによって形成することが可能である。裏面側導体層を構成する金属材料としては、例えば銅、銀、鉄、コバルト、ニッケルなどが挙げられるが、特には、導電性が高く安価な銅からなることがよい。また、裏面側導体層は、めっきによって形成されることがよい。このようにすれば、裏面側導体層を簡単かつ低コストで形成することができる。しかし、裏面側導体層は、金属ペーストを印刷することによって形成されていてもよい。なお、上記手段1において、裏面側導体層は、複数の収容穴部のコア裏面側開口を露出させるとともにブリッジ部のコア裏面を露出させる1つの貫通孔を有し、貫通孔の開口端からブリッジ部に向けて張り出してなる張出部を備え、張出部の先端部は平面視で曲面形状を有していてもよい。このようにすれば、樹脂充填材に熱応力が加わったとしても、張出部(裏面側導体層)の先端部への応力集中が、曲面状の外表面によって緩和される。よって、樹脂充填材へのクラックの発生を確実に防止することができる。  The core substrate has a bridge portion positioned between adjacent accommodation hole portions, and an outer peripheral portion in which a back surface side conductor layer surrounding the plurality of accommodation hole portions and the bridge portion is formed on the core back surface. Note that the back-side conductor layer can be formed of a conductive metal material or the like. Examples of the metal material constituting the back-side conductor layer include copper, silver, iron, cobalt, nickel, and the like. In particular, the metal material is preferably made of copper having high conductivity and low cost. Further, the back side conductor layer is preferably formed by plating. If it does in this way, a back side conductor layer can be formed simply and at low cost. However, the back side conductor layer may be formed by printing a metal paste. In the above means 1, the back side conductor layer has one through hole that exposes the core back side opening of the plurality of receiving holes and the core back side of the bridge part, and bridges from the opening end of the through hole. An overhanging part that projects toward the part may be provided, and the tip of the overhanging part may have a curved surface shape in plan view. In this way, even if thermal stress is applied to the resin filler, the stress concentration on the tip of the overhang portion (back side conductor layer) is alleviated by the curved outer surface. Therefore, the occurrence of cracks in the resin filler can be reliably prevented. *

複数の部品は、部品主面、部品裏面及び部品側面を有し、コア主面と部品主面とを同じ側に向けた状態で複数の収容穴部にそれぞれ収容されている。部品の平面視での形状は、任意に設定することが可能であるが、特には、複数の辺を有する平面視多角形状であることがよい。平面視多角形状としては、例えば、平面視略矩形状、平面視略三角形状、平面視略六角形状などを挙げることができるが、特には、一般的な形状である平面視略矩形状であることがよい。ここで、「平面視略矩形状」とは、平面視で完全な形状のみをいうのではなく、角部が面取りされた形状や、辺の一部が曲線となっている形状も含むものとする。  The plurality of components have a component main surface, a component back surface, and a component side surface, and are respectively accommodated in the plurality of accommodating hole portions in a state where the core main surface and the component main surface face the same side. The shape of the component in plan view can be arbitrarily set, but in particular, it is preferably a polygonal shape in plan view having a plurality of sides. Examples of the polygonal shape in a plan view include a substantially rectangular shape in a plan view, a substantially triangular shape in a plan view, and a substantially hexagonal shape in a plan view, and in particular, a generally rectangular shape in a plan view. It is good. Here, the “substantially rectangular shape in plan view” does not mean only a complete shape in plan view but also includes a shape in which corners are chamfered and a shape in which a part of a side is a curve. *

なお、好適な部品としては、コンデンサ、半導体集積回路素子(ICチップ)、半導体製造プロセスで製造されたMEMS(Micro Electro Mechanical Systems)素子などを挙げることができる。  Suitable components include capacitors, semiconductor integrated circuit elements (IC chips), MEMS (Micro Electro Mechanical Systems) elements manufactured by a semiconductor manufacturing process, and the like. *

また、好適なコンデンサの例としては、誘電体層を介して複数の内部電極層が積層配置された構造を有するチップコンデンサや、誘電体層を介して複数の内部電極層が積層配置された構造を有し、複数の内部電極層に接続される複数のビア導体を備え、複数のビア導体が全体としてアレイ状に配置されたビアアレイタイプのコンデンサなどを挙げることができる。  Examples of suitable capacitors include a chip capacitor having a structure in which a plurality of internal electrode layers are stacked via a dielectric layer, and a structure in which a plurality of internal electrode layers are stacked via a dielectric layer. And a via array type capacitor in which a plurality of via conductors connected to a plurality of internal electrode layers are provided, and the plurality of via conductors are arranged in an array as a whole. *

コンデンサを構成する誘電体層としては、セラミック誘電体層、樹脂誘電体層、セラミック-樹脂複合材料からなる誘電体層などが挙げられる。内部電極層及びビア導体としては特に限定されないが、例えば誘電体層がセラミック誘電体層である場合にはメタライズ導体であってもよい。なお、メタライズ導体は、金属粉末を含む導体ペーストを従来周知の手法、例えばメタライズ印刷法で塗布した後に焼成することにより、形成される。  Examples of the dielectric layer constituting the capacitor include a ceramic dielectric layer, a resin dielectric layer, and a dielectric layer made of a ceramic-resin composite material. The internal electrode layer and the via conductor are not particularly limited. For example, when the dielectric layer is a ceramic dielectric layer, it may be a metallized conductor. The metallized conductor is formed by applying a conductive paste containing metal powder by a conventionally well-known method, for example, a metallized printing method, followed by baking. *

なお、収容穴部の内壁面と部品側面との隙間には、樹脂充填材が充填される。なお、樹脂充填材は、絶縁性、耐熱性、耐湿性等を考慮して適宜選択することができる。樹脂充填材を形成する高分子材料の好適例としては、エポキシ樹脂、フェノール樹脂、ウレタン樹脂、シリコーン樹脂、ポリイミド樹脂などが挙げられる。  Note that a resin filler is filled in the gap between the inner wall surface of the accommodation hole and the side surface of the component. The resin filler can be appropriately selected in consideration of insulation, heat resistance, moisture resistance, and the like. Preferable examples of the polymer material forming the resin filler include an epoxy resin, a phenol resin, a urethane resin, a silicone resin, and a polyimide resin. *


 上記部品内蔵配線基板を構成する配線積層部は、高分子材料を主体とする層間絶縁層及び導体層をコア裏面上及び部品裏面上にて積層した構造を有している。配線積層部(裏面側配線積層部)はコア裏面上及び部品裏面上にのみ形成されるが、層間絶縁層及び導体層をコア主面上及び部品主面上にて積層した構造を有する配線積層部(主面側配線積層部)がさらに形成されていてもよい。このように構成すれば、裏面側配線積層部のみではなく、主面側配線積層部にも電気回路を形成できるため、部品内蔵配線基板のよりいっそうの高機能化を図ることができる。

The wiring laminated portion constituting the component built-in wiring board has a structure in which an interlayer insulating layer and a conductor layer mainly composed of a polymer material are laminated on the core back surface and the component back surface. The wiring laminated portion (backside wiring laminated portion) is formed only on the core back surface and the component back surface, but has a structure in which an interlayer insulating layer and a conductor layer are laminated on the core main surface and the component main surface. A portion (main surface side wiring laminated portion) may be further formed. With such a configuration, an electric circuit can be formed not only on the back surface side wiring laminated portion but also on the main surface side wiring laminated portion, so that it is possible to further enhance the functionality of the component built-in wiring board.

層間絶縁層は、絶縁性、耐熱性、耐湿性等を考慮して適宜選択することができる。層間絶縁層を形成するための高分子材料の好適例としては、エポキシ樹脂、フェノール樹脂、ウレタン樹脂、シリコーン樹脂、ポリイミド樹脂、ビスマレイミド-トリアジン樹脂、キシレン樹脂、ポリエステル樹脂などの熱硬化性樹脂、ポリカーボネート樹脂、アクリル樹脂、ポリアセタール樹脂、ポリプロピレン樹脂などの熱可塑性樹脂等が挙げられる。  The interlayer insulating layer can be appropriately selected in consideration of insulation, heat resistance, moisture resistance, and the like. Preferred examples of the polymer material for forming the interlayer insulating layer include thermosetting resins such as epoxy resins, phenol resins, urethane resins, silicone resins, polyimide resins, bismaleimide-triazine resins, xylene resins, polyester resins, Examples thereof include thermoplastic resins such as polycarbonate resin, acrylic resin, polyacetal resin, and polypropylene resin. *

なお、導体層は、導電性を有する金属材料などによって形成することが可能である。導体層を構成する金属材料としては、例えば銅、銀、鉄、コバルト、ニッケルなどが挙げられる。特に、導体層は、導電性が高く安価な銅からなることがよい。また、導体層は、めっきによって形成されることよい。このようにすれば、導体層を簡単かつ低コストで形成することができる。しかし、導体層は、金属ペーストを印刷することによって形成されていてもよい。  Note that the conductor layer can be formed using a conductive metal material or the like. Examples of the metal material constituting the conductor layer include copper, silver, iron, cobalt, nickel and the like. In particular, the conductor layer is preferably made of copper having high conductivity and low cost. The conductor layer may be formed by plating. In this way, the conductor layer can be formed easily and at low cost. However, the conductor layer may be formed by printing a metal paste. *

また、上記手段2の部品内蔵配線基板では、ブリッジ部のコア裏面に、裏面側導体層から独立し、かつ裏面側導体層の表面と同じ高さに突出する島状層が形成される。ここで、島状層の平面視での形状は、任意に設定することが可能であるが、例えば、平面視矩形状、平面視三角形状、平面視円形状、平面視楕円形状、平面視十字状などを挙げることができる。また、島状層は、樹脂材料、セラミック材料及び金属材料などによって形成することが可能であるが、特には金属材料であることがよい。金属材料を用いる場合には、裏面側導体層を構成する材料と同じ材料(導電性を有する材料)を用いることができるため、部品内蔵配線基板の製造コストを抑えることができる。かかる金属材料の好適例を挙げると、例えば、銅、銀、鉄、コバルト、ニッケルなどが挙げられるが、特には、導電性が高く安価な銅からなることがよい。また、樹脂材料の好適例としては、例えば、エポキシ樹脂、ポリイミド樹脂、ビスマレイミド・トリアジン樹脂、ポリフェニレンエーテル樹脂、フェノール樹脂などを挙げることができる。そのほか、これらの樹脂とガラス繊維(ガラス織布やガラス不織布)やポリアミド繊維等の有機繊維との複合材料を使用してもよい。セラミック材料の好適例としては、アルミナ、窒化アルミニウム、窒化珪素、窒化ホウ素、べリリア、ムライト、ガラスセラミックなどが挙げられる。  Further, in the component built-in wiring board of the above means 2, an island layer is formed on the core back surface of the bridge portion independently of the back surface side conductor layer and protruding at the same height as the surface of the back surface side conductor layer. Here, the shape of the island layer in plan view can be arbitrarily set. For example, the plan view rectangular shape, the plan view triangular shape, the plan view circular shape, the plan view elliptical shape, and the plan view cross And the like. The island-like layer can be formed of a resin material, a ceramic material, a metal material, or the like, but is particularly preferably a metal material. In the case of using a metal material, the same material (material having conductivity) as the material constituting the back side conductor layer can be used, so that the manufacturing cost of the component built-in wiring board can be suppressed. Preferable examples of such a metal material include copper, silver, iron, cobalt, nickel and the like. In particular, the metal material is preferably made of copper having high conductivity and low cost. Moreover, as a suitable example of a resin material, an epoxy resin, a polyimide resin, a bismaleimide-triazine resin, a polyphenylene ether resin, a phenol resin etc. can be mentioned, for example. In addition, composite materials of these resins and glass fibers (glass woven fabric or glass nonwoven fabric) or organic fibers such as polyamide fibers may be used. Preferable examples of the ceramic material include alumina, aluminum nitride, silicon nitride, boron nitride, beryllia, mullite, glass ceramic and the like. *

なお、ブリッジ部のコア裏面に複数の島状層が形成され、隣接する島状層間の領域がスリット状をなしていてもよい。このようにすれば、各島状層の先端面に接する配線積層部の表面と、裏面側導体層の表面に接する配線積層部の表面とを平坦にすることができるため、配線積層部の寸法精度がよりいっそう向上する。  A plurality of island layers may be formed on the back surface of the core of the bridge portion, and a region between adjacent island layers may have a slit shape. In this way, the surface of the wiring laminated portion in contact with the front end surface of each island layer and the surface of the wiring laminated portion in contact with the surface of the back side conductor layer can be flattened. The accuracy is further improved. *

さらに、複数の島状層は、隣接する収容穴部の中心同士を結ぶ仮想線と直交する方向に配置されていてもよいし、仮想線と平行に延びる細長い形状をなしていてもよい。また、島状層は、平面視で曲線状をなしていてもよい。以上のようにすれば、樹脂充填材の一部が、裏面側導体層と島状層との隙間にスムーズに流れ込むようになるため、上記した潜り込みがよりいっそう発生しにくくなる。また、樹脂充填材に熱応力が加わったとしても、島状層の外周部への応力集中が、曲面状の外表面によって緩和される。よって、樹脂充填材へのクラックの発生を防止することができる。  Further, the plurality of island layers may be arranged in a direction orthogonal to a virtual line connecting the centers of the adjacent accommodation holes, or may have an elongated shape extending in parallel with the virtual line. Further, the island layer may have a curved shape in plan view. By doing so, a part of the resin filler smoothly flows into the gap between the back-side conductor layer and the island layer, so that the above-described submergence is further less likely to occur. Further, even if thermal stress is applied to the resin filler, the stress concentration on the outer peripheral portion of the island layer is alleviated by the curved outer surface. Therefore, generation | occurrence | production of the crack to a resin filler can be prevented. *

なお、ブリッジ部に、コア主面及びコア裏面を貫通するスルーホール導体が形成され、島状層は、スルーホール導体のコア裏面側端部に電気的に接続されるパッドであってもよい。このようにすれば、ブリッジ部に電気回路を形成できるため、部品内蔵配線基板の高機能化を図ることができる。さらに、ブリッジ部のコア裏面において島状層が存在しない非形成領域に、コア裏面において開口するとともに隣接する収容穴部間を連通する凹部が設けられていてもよい。このようにすれば、樹脂充填材が、裏面側導体層と島状層との隙間に加えて、凹部内にも流れ込む(逃げ込む)ようになるため、上記した潜り込みがよりいっそう発生しにくくなる。  Note that a through-hole conductor penetrating the core main surface and the core back surface may be formed in the bridge portion, and the island layer may be a pad that is electrically connected to the end portion on the core back surface side of the through-hole conductor. In this way, since an electric circuit can be formed in the bridge portion, the function of the component built-in wiring board can be enhanced. Furthermore, a concave portion that opens on the back surface of the core and communicates between adjacent accommodation holes may be provided in a non-formation region where no island layer exists on the core back surface of the bridge portion. In this way, the resin filler flows into (is escaped from) the recesses in addition to the gaps between the back-side conductor layer and the island-like layer, so that the above-described submergence is further less likely to occur. *

さらに、上記課題を解決するための別の手段(手段3)としては、上記手段1に記載の部品内蔵配線基板の製造方法であって、前記コア基板を準備するコア基板準備工程と、前記コア基板準備工程後、前記収容穴部を複数形成することにより、前記外周部と前記ブリッジ部とを有する前記コア基板を得る収容穴部形成工程と、前記収容穴部形成工程後、前記外周部の前記コア裏面に前記裏面側導体層を形成することにより、前記ブリッジ部の厚さを、前記外周部と前記裏面側導体層との合計の厚さよりも薄くする導体層形成工程と、前記複数の部品を準備する部品準備工程と、前記導体層形成工程及び前記部品準備工程後、複数の前記収容穴部内にそれぞれ前記部品を収容する収容工程と、前記収容工程後、前記収容穴部の内壁面と前記部品側面との隙間に樹脂充填材を充填するとともに、前記樹脂充填材の一部で前記ブリッジ部の前記コア裏面を覆う充填工程と、前記充填工程後、前記ブリッジ部の前記コア裏面を覆う前記樹脂充填材の表面上及び前記部品裏面上に前記配線積層部を形成する配線積層部形成工程とを含むことを特徴とする部品内蔵配線基板の製造方法がある。  Furthermore, as another means (means 3) for solving the above-mentioned problem, there is provided a method of manufacturing a component built-in wiring board according to the above means 1, wherein a core substrate preparation step for preparing the core substrate, and the core After the substrate preparation step, by forming a plurality of the receiving hole portions, a receiving hole portion forming step for obtaining the core substrate having the outer peripheral portion and the bridge portion, and after the receiving hole portion forming step, A conductor layer forming step of forming the back side conductor layer on the core back side so that the thickness of the bridge portion is thinner than the total thickness of the outer peripheral portion and the back side conductor layer; After the component preparing step for preparing the component, the conductor layer forming step, and the component preparing step, the accommodating step for accommodating the component in each of the accommodating holes, and the inner wall surface of the accommodating hole after the accommodating step And the above parts Filling a resin filler into a gap with the surface and covering the core back surface of the bridge portion with a part of the resin filler; and the resin covering the core back surface of the bridge portion after the filling step There is a method for manufacturing a wiring board with a built-in component, which includes a wiring laminated portion forming step of forming the wiring laminated portion on the front surface of the filler and the back surface of the component. *

コア基板のコア裏面全体に裏面側導体層が形成されている場合、樹脂充填材を用いて部品を固定する際に、ブリッジ部に形成された裏面側導体層と配線積層部との間に樹脂充填材が潜り込んでしまい、配線積層部と裏面側導体層との密着性に問題が生じるおそれがある。そこで、上記手段3の部品内蔵配線基板の製造方法では、導体層形成工程において、ブリッジ部を取り囲むように裏面側導体層を形成し、ブリッジ部の厚さを、外周部と裏面側導体層との合計の厚さよりも薄くしている。この場合、充填工程を行うことにより、ブリッジ部の表面と配線積層部との隙間が樹脂充填材の一部で埋められるため、上記した潜り込みが発生しにくくなる。ゆえに、配線積層部形成工程を行う際に、コア基板と配線積層部とが確実に密着するようになるため、信頼性に優れた部品内蔵配線基板を得ることができる。  When the back side conductor layer is formed on the entire core back side of the core substrate, the resin is interposed between the back side conductor layer formed on the bridge part and the wiring laminated part when fixing the component using the resin filler. There is a possibility that the filler may sink and cause a problem in the adhesion between the wiring laminated portion and the back side conductor layer. Therefore, in the method for manufacturing the component built-in wiring board of means 3 described above, in the conductor layer forming step, the back surface side conductor layer is formed so as to surround the bridge portion, and the thickness of the bridge portion is set to the outer peripheral portion and the back surface side conductor layer. It is thinner than the total thickness. In this case, by performing the filling step, the gap between the surface of the bridge portion and the wiring laminated portion is filled with a part of the resin filler, so that the above-described submergence hardly occurs. Therefore, when performing the wiring laminated portion forming step, the core substrate and the wiring laminated portion are surely brought into close contact with each other, so that a component built-in wiring substrate with excellent reliability can be obtained. *

また、上記課題を解決するための別の手段(手段4)としては、上記手段2に記載の部品内蔵配線基板の製造方法であって、前記コア基板を準備するコア基板準備工程と、前記コア基板準備工程後、前記収容穴部を複数形成することにより、前記外周部と前記ブリッジ部とを有する前記コア基板を得る収容穴部形成工程と、前記収容穴部形成工程後、前記外周部の前記コア裏面に前記裏面側導体層を形成する導体層形成工程と、前記収容穴部形成工程後、前記ブリッジ部の前記コア裏面に前記島状層を形成する島状層形成工程と、前記複数の部品を準備する部品準備工程と、前記導体層形成工程、前記島状層形成工程及び前記部品準備工程の終了後、複数の前記収容穴部内にそれぞれ前記部品を収容する収容工程と、前記収容工程後、前記収容穴部の内壁面と前記部品側面との隙間に前記樹脂充填材を充填するとともに、前記裏面側導体層と前記島状層との隙間に前記樹脂充填材の一部を充填する充填工程と、前記充填工程後、前記裏面側導体層と前記島状層との隙間に充填された前記樹脂充填材の表面上及び前記部品裏面上に前記配線積層部を形成する配線積層部形成工程とを含むことを特徴とする部品内蔵配線基板の製造方法がある。  Further, as another means (means 4) for solving the above-mentioned problem, there is provided a method of manufacturing a component built-in wiring board according to the above means 2, wherein a core substrate preparation step for preparing the core substrate, and the core After the substrate preparation step, by forming a plurality of the receiving hole portions, a receiving hole portion forming step for obtaining the core substrate having the outer peripheral portion and the bridge portion, and after the receiving hole portion forming step, A conductor layer forming step of forming the back side conductor layer on the core back surface, an island layer forming step of forming the island layer on the core back surface of the bridge portion after the accommodation hole forming step, and the plurality A component preparing step for preparing the component, a housing step for housing the component in a plurality of the housing holes after the conductor layer forming step, the island layer forming step, and the component preparing step, and the housing After the process, Filling the resin filler in the gap between the inner wall surface of the hole and the side surface of the component, and filling the gap between the back-side conductor layer and the island layer with a part of the resin filler; A wiring laminated portion forming step of forming the wiring laminated portion on the front surface of the resin filler filled in the gap between the back surface side conductor layer and the island-shaped layer and on the component back surface after the filling step; There is a method for manufacturing a component built-in wiring board. *

コア基板のコア裏面全体に裏面側導体層が形成されている場合、樹脂充填材を用いて部品を固定する際に、ブリッジ部に形成された裏面側導体層と配線積層部との間に樹脂充填材が潜り込んでしまい、配線積層部と裏面側導体層との密着性に問題が生じるおそれがある。そこで、上記手段4の部品内蔵配線基板の製造方法では、ブリッジ部を取り囲むように裏面側導体層を形成する導体層形成工程を行うとともに、ブリッジ部に、裏面側導体層から独立し、かつ裏面側導体層の表面と同じ高さに突出する島状層を形成する島状層形成工程を行っている。この場合、充填工程を行う際に、収容穴部の内壁面と部品側面との隙間に充填された樹脂充填材の一部が、裏面側導体層と島状層との隙間に流れ込む(逃げ込む)ようになるため、上記した潜り込みが発生しにくくなる。ゆえに、配線積層部形成工程を行う際に、コア基板と配線積層部とが確実に密着するようになるため、信頼性に優れた部品内蔵配線基板を得ることができる。  When the back side conductor layer is formed on the entire core back side of the core substrate, the resin is interposed between the back side conductor layer formed on the bridge part and the wiring laminated part when fixing the component using the resin filler. There is a possibility that the filler may sink and cause a problem in the adhesion between the wiring laminated portion and the back side conductor layer. Therefore, in the method of manufacturing the component built-in wiring board according to the above means 4, a conductor layer forming step of forming a back surface side conductor layer so as to surround the bridge portion is performed, and the bridge portion is independent from the back surface side conductor layer and An island-shaped layer forming step for forming an island-shaped layer protruding at the same height as the surface of the side conductor layer is performed. In this case, when the filling process is performed, a part of the resin filler filled in the gap between the inner wall surface of the accommodation hole and the side surface of the component flows into the gap between the back-side conductor layer and the island layer (runs away). As a result, the above-described sinking is less likely to occur. Therefore, when performing the wiring laminated portion forming step, the core substrate and the wiring laminated portion are surely brought into close contact with each other, so that a component built-in wiring substrate with excellent reliability can be obtained. *

また、上記手段3,4の部品内蔵配線基板の製造方法では、充填工程を行う際に、上記した樹脂充填材の潜り込みが防止されることから、ブリッジ部のコア裏面側に樹脂充填材の盛り上がり部分が形成されにくくなる。よって、コア裏面側に形成された配線積層部の表面を平坦にすることができ、配線積層部の寸法精度が向上する。さらに、上記手段3,4の部品内蔵配線基板の製造方法では、収容穴部形成工程においてコア基板に複数の収容穴部が形成され、収容工程において1つの収容穴部に1つの部品が収容されるため、それぞれの収容穴部の開口面積を大きくしなくても済む。よって、部品の搭載数を増やしつつ、コア基板の強度を確保することができる。仮に、1つの収容穴部に複数の部品を収容すると、収容穴部の開口面積が大きくなるため、コア基板の強度が低下してしまう。  Further, in the method of manufacturing the component built-in wiring board of the means 3 and 4, since the above-mentioned resin filler is prevented from entering when the filling step is performed, the resin filler swells on the core back surface side of the bridge portion. A part becomes difficult to be formed. Therefore, the surface of the wiring laminated portion formed on the back side of the core can be flattened, and the dimensional accuracy of the wiring laminated portion is improved. Further, in the method of manufacturing the component built-in wiring board of the means 3 and 4, a plurality of housing holes are formed in the core substrate in the housing hole forming process, and one component is housed in one housing hole in the housing process. Therefore, it is not necessary to increase the opening area of each receiving hole. Therefore, the strength of the core substrate can be ensured while increasing the number of components mounted. If a plurality of components are accommodated in one accommodation hole, the opening area of the accommodation hole is increased, and the strength of the core substrate is reduced. *

以下、部品内蔵配線基板の製造方法について説明する。  Hereinafter, a manufacturing method of the component built-in wiring board will be described. *

コア基板準備工程では、上記部品内蔵配線基板を構成するコア基板を、従来周知の手法により作製し、あらかじめ準備しておく。なお、上記手段4のコア基板準備工程では、コア裏面に裏面側導体層及び島状層となる金属箔が貼付された積層板を準備し、導体層形成工程及び島状層形成工程では、複数の収容穴部及びブリッジ部を露出させる開口部と、ブリッジ部のコア裏面上において島状層となる部位を被覆する被覆部とを有するめっきレジストを、金属箔の表面上に形成するレジスト形成工程と、金属箔における開口部からの露出部分であって被覆部の外周側となる部分をエッチングすることにより、金属箔を部分的に除去する金属箔除去工程と、金属箔除去工程後、めっきレジストを除去するレジスト除去工程とを行ってもよい。このようにすれば、裏面側導体層及び島状層を形成するにあたり、裏面側導体層及び島状層を形成するための材料を新たに準備しなくても済むため、裏面側導体層及び島状層を容易に形成することができる。  In the core substrate preparation step, the core substrate constituting the component built-in wiring substrate is prepared by a conventionally known method and prepared in advance. In the core substrate preparation step of the above means 4, a laminated plate having a back side conductor layer and a metal foil to be an island layer attached to the back surface of the core is prepared, and in the conductor layer formation step and the island layer formation step, a plurality of Forming a plating resist having an opening for exposing the housing hole and the bridge portion, and a covering portion for covering a portion to be an island layer on the core back surface of the bridge portion on the surface of the metal foil And a metal foil removing step for partially removing the metal foil by etching the exposed portion from the opening in the metal foil and on the outer peripheral side of the covering portion, and after the metal foil removing step, the plating resist And a resist removing step for removing. In this way, when forming the back side conductor layer and the island layer, it is not necessary to newly prepare a material for forming the back side conductor layer and the island layer. Can be easily formed. *

続く収容穴部形成工程では、収容穴部を複数形成することにより、外周部とブリッジ部とを有するコア基板を得る。続く導体層形成工程では、外周部のコア裏面に裏面側導体層を形成する。ここで、上記手段3では、導体層形成工程において外周部のコア裏面に裏面側導体層を形成することにより、ブリッジ部の厚さを、外周部と裏面側導体層との合計の厚さよりも薄くする。また、上記手段4では、収容穴部形成工程後に島状層形成工程を行い、ブリッジ部のコア裏面に島状層を形成する。なお、島状層形成工程では、ブリッジ部のコア裏面に複数の島状層が形成され、複数の島状層は、充填工程において裏面側導体層と島状層との隙間に樹脂充填材が流れ込む方向に沿って延びていてもよい。このようにすれば、樹脂充填材の一部が、裏面側導体層と島状層との隙間にスムーズに流れ込むようになるため、上記した潜り込みがよりいっそう発生しにくくなる。  In the subsequent accommodation hole forming step, a core substrate having an outer peripheral portion and a bridge portion is obtained by forming a plurality of accommodation holes. In the subsequent conductor layer forming step, a back surface side conductor layer is formed on the core back surface of the outer peripheral portion. Here, in the above means 3, the thickness of the bridge portion is made larger than the total thickness of the outer peripheral portion and the back surface side conductor layer by forming the back surface side conductor layer on the core back surface of the outer peripheral portion in the conductor layer forming step. make it thin. Moreover, in the said means 4, an island-like layer formation process is performed after an accommodation hole part formation process, and an island-like layer is formed in the core back surface of a bridge | bridging part. In the island layer formation step, a plurality of island layers are formed on the back surface of the core of the bridge portion, and the plurality of island layers are filled with a resin filler in the gap between the back side conductor layer and the island layer in the filling step. It may extend along the flowing direction. In this way, a part of the resin filler smoothly flows into the gap between the back-side conductor layer and the island-like layer, so that the above-described sinking is further less likely to occur. *


 なお、上記手段3のコア基板準備工程では、コア裏面に裏面側導体層となる金属箔が貼付された積層板を準備し、上記手段3の導体層形成工程では、複数の収容穴部とブリッジ部のコア裏面上の部位とを露出させる1つの開口部を有するめっきレジストを金属箔の表面上に形成するレジスト形成工程と、金属箔における開口部からの露出部分をエッチングすることにより、金属箔を部分的に除去する金属箔除去工程と、金属箔除去工程後、めっきレジストを除去するレジスト除去工程とを行ってもよい。このようにすれば、裏面側導体層を形成するにあたり、裏面側導体層を形成するための材料を新たに準備しなくても済むため、裏面側導体層を容易に形成することができる。

In the core substrate preparation step of the means 3, a laminated plate having a metal foil to be a back side conductor layer attached to the back surface of the core is prepared. In the conductor layer formation step of the means 3, a plurality of receiving holes and bridges are prepared. Forming a plating resist having one opening on the surface of the metal foil to expose a portion of the core on the back surface of the core, and etching the exposed portion from the opening in the metal foil to form the metal foil A metal foil removing step for partially removing the resist and a resist removing step for removing the plating resist after the metal foil removing step may be performed. By doing so, it is not necessary to newly prepare a material for forming the back surface side conductor layer when forming the back surface side conductor layer, and therefore, the back surface side conductor layer can be easily formed.

また、部品準備工程では、上記部品内蔵配線基板を構成する複数の部品を、従来周知の手法により作製し、あらかじめ準備しておく。そして、収容工程では、複数の収容穴部内にそれぞれ部品を収容する。さらに、上記手段3の充填工程では、収容穴部の内壁面と部品側面との隙間に樹脂充填材を充填するとともに、樹脂充填材の一部でブリッジ部のコア裏面を覆う。また、上記手段4の充填工程では、収容穴部の内壁面と部品側面との隙間に樹脂充填材を充填するとともに、裏面側導体層と島状層との隙間に樹脂充填材の一部を充填する。  In the component preparation step, a plurality of components constituting the component-embedded wiring board are prepared by a conventionally known method and prepared in advance. In the housing step, the components are housed in the plurality of housing holes, respectively. Further, in the filling step of the means 3, the resin filler is filled in the gap between the inner wall surface of the housing hole and the side surface of the component, and the core back surface of the bridge portion is covered with a part of the resin filler. In the filling step of the means 4, the resin filler is filled in the gap between the inner wall surface of the housing hole and the side surface of the component, and a part of the resin filler is put in the gap between the back side conductor layer and the island layer. Fill. *

なお、充填工程が終了した時点で、部品の部品裏面がブリッジ部のコア裏面を覆う樹脂充填材(特に手段4では、裏面側導体層と島状層との隙間に充填された樹脂充填材)の表面と面一になっていないと、配線積層部形成工程において配線積層部を形成する際に、部品裏面とコア裏面を覆う樹脂充填材の表面とに接する配線積層部の表面を平坦にすることができず、部品内蔵配線基板の寸法精度が低下してしまう。そこで、上記手段3の収容工程及び充填工程は、複数の収容穴部のコア裏面側開口を粘着面を有する粘着テープで塞ぎ、外周部のコア裏面に形成された裏面側導体層に粘着面を密着させる一方、ブリッジ部のコア裏面から粘着面を離間させた状態で行われ、充填工程後に粘着テープを除去するようにしてもよい。また、上記手段4の収容工程及び充填工程は、複数の収容穴部のコア裏面側開口を粘着面を有する粘着テープで塞ぎ、外周部のコア裏面に形成された裏面側導体層とブリッジ部のコア裏面に形成された島状層とに粘着面を密着させた状態で行われ、充填工程後に粘着テープを除去するようにしてもよい。以上のようにすれば、収容工程において、部品の部品裏面側が粘着テープの粘着面に貼り付けられて仮固定され、それぞれの部品の部品裏面がコア裏面に形成された裏面側導体層の表面と面一になる。特に、上記手段4では、粘着テープが島状層によって支持された状態となることから、粘着テープの撓みが防止されるため、粘着テープの粘着面に貼り付けられた部品の位置精度の低下が防止される。よって、部品裏面及び裏面側導体層の表面に接する配線積層部の表面を平坦にすることができ、部品内蔵配線基板の寸法精度が向上する。  When the filling process is completed, a resin filler in which the component back surface of the component covers the core back surface of the bridge portion (particularly, in means 4, the resin filler is filled in the gap between the back-side conductor layer and the island layer). If it is not flush with the surface of the wiring, the surface of the wiring laminated portion in contact with the back surface of the component and the surface of the resin filler covering the back surface of the core is flattened when forming the wiring laminated portion in the wiring laminated portion forming step. Therefore, the dimensional accuracy of the component built-in wiring board is lowered. Therefore, in the housing step and the filling step of the means 3, the core back surface side openings of the plurality of housing holes are closed with an adhesive tape having an adhesive surface, and the adhesive surface is applied to the back surface side conductor layer formed on the core back surface of the outer peripheral portion. On the other hand, the adhesive tape may be removed after the filling process, with the adhesive surface being separated from the core back surface of the bridge portion. In addition, the housing step and the filling step of the means 4 include closing the core back surface side openings of the plurality of housing holes with an adhesive tape having an adhesive surface, and forming the back surface side conductor layer and the bridge portion formed on the core back surface of the outer peripheral portion. It may be performed in a state where the adhesive surface is in close contact with the island-like layer formed on the back surface of the core, and the adhesive tape may be removed after the filling step. As described above, in the housing process, the component back side of the component is attached to the adhesive surface of the adhesive tape and temporarily fixed, and the component back surface of each component is formed on the core back surface and the surface of the back side conductor layer. Become the same. In particular, in the above means 4, since the adhesive tape is supported by the island-like layer, the adhesive tape is prevented from being bent, so that the positional accuracy of the parts attached to the adhesive surface of the adhesive tape is reduced. Is prevented. Therefore, it is possible to flatten the surface of the wiring laminated portion in contact with the back surface of the component and the surface of the back conductor layer, and the dimensional accuracy of the component built-in wiring board is improved. *

その後、上記手段3の配線積層部形成工程では、ブリッジ部のコア裏面を覆う樹脂充填材の表面上及び部品裏面上に配線積層部を形成する。また、上記手段4の配線積層部形成工程では、裏面側導体層と島状層との隙間に充填された樹脂充填材の表面上及び部品裏面上に配線積層部を形成する。以上のプロセスを経て、部品内蔵配線基板が製造される。 Thereafter, in the wiring laminated portion forming step of the means 3, the wiring laminated portion is formed on the surface of the resin filler covering the core back surface of the bridge portion and on the component back surface. Further, in the wiring laminated portion forming step of the above means 4, the wiring laminated portion is formed on the surface of the resin filler filled in the gap between the back side conductor layer and the island-like layer and on the back side of the component. The component built-in wiring board is manufactured through the above processes.

本発明を具体化した第1実施形態の配線基板を示す概略断面図。1 is a schematic sectional view showing a wiring board according to a first embodiment embodying the present invention. コア基板及びチップコンデンサを示す概略裏面図。The schematic back view which shows a core board | substrate and a chip capacitor. 図2のA-A線断面図。FIG. 3 is a sectional view taken along line AA in FIG. 2. 図2のB-B線断面図。FIG. 3 is a sectional view taken along line BB in FIG. 2. チップコンデンサを示す概略平面図。The schematic plan view which shows a chip capacitor. 図5のC-C線断面図。FIG. 6 is a sectional view taken along the line CC of FIG. 図5のD-D線断面図。FIG. 6 is a sectional view taken along line DD of FIG. 5. コア基板準備工程を示す概略断面図。The schematic sectional drawing which shows a core board | substrate preparatory process. スルーホール導体及び充填樹脂を形成する工程と、収容穴部形成工程とを示す説明図。Explanatory drawing which shows the process of forming a through-hole conductor and filling resin, and an accommodation hole part formation process. 収容穴部形成工程におけるコア基板を示す概略裏面図。The schematic back view which shows the core board | substrate in an accommodation hole part formation process. レジスト形成工程(導体層形成工程)を示す説明図。Explanatory drawing which shows a resist formation process (conductor layer formation process). レジスト形成工程(導体層形成工程)におけるコア基板及びめっきレジストを示す概略裏面図。The schematic back view which shows the core board | substrate and plating resist in a resist formation process (conductor layer formation process). 金属箔除去工程及びレジスト除去工程を示す説明図。Explanatory drawing which shows a metal foil removal process and a resist removal process. 金属箔除去工程及びレジスト除去工程におけるコア基板を示す概略裏面図。The schematic back view which shows the core board | substrate in a metal foil removal process and a resist removal process. 粘着テープを貼付する工程を示す説明図。Explanatory drawing which shows the process of sticking an adhesive tape. 収容工程を示す説明図。Explanatory drawing which shows a accommodation process. 収容工程におけるコア基板及びチップコンデンサを示す概略平面図。The schematic plan view which shows the core board | substrate and chip capacitor in an accommodation process. 充填工程を示す説明図。Explanatory drawing which shows a filling process. 層間絶縁層及びビア孔を形成する工程を示す説明図。Explanatory drawing which shows the process of forming an interlayer insulation layer and a via hole. 導体層及びビア導体を形成する工程を示す説明図。Explanatory drawing which shows the process of forming a conductor layer and a via conductor. 他の実施形態におけるコア基板及びチップコンデンサを示す概略裏面図。The schematic back view which shows the core board | substrate and chip capacitor in other embodiment. 他の実施形態におけるセラミックコンデンサを示す概略断面図。The schematic sectional drawing which shows the ceramic capacitor in other embodiment. 他の実施形態における配線基板を示す概略断面図。The schematic sectional drawing which shows the wiring board in other embodiment. 本発明を具体化した第2実施形態の配線基板を示す概略断面図。The schematic sectional drawing which shows the wiring board of 2nd Embodiment which actualized this invention. コア基板及びチップコンデンサを示す概略裏面図。The schematic back view which shows a core board | substrate and a chip capacitor. 図25のE-E線断面図。FIG. 26 is a sectional view taken along line EE in FIG. 25. 図25のF-F線断面図。FIG. 26 is a sectional view taken along line FF in FIG. 25. コア基板準備工程を示す説明図。Explanatory drawing which shows a core board | substrate preparatory process. レジスト形成工程(導体層形成工程、島状層形成工程)を示す説明図。Explanatory drawing which shows a resist formation process (a conductor layer formation process, an island-shaped layer formation process). レジスト形成工程(導体層形成工程、島状層形成工程)におけるコア基板及びめっきレジストを示す概略裏面図。The schematic back view which shows the core board | substrate and plating resist in a resist formation process (a conductor layer formation process, an island-shaped layer formation process). 金属箔除去工程及びレジスト除去工程を示す説明図。Explanatory drawing which shows a metal foil removal process and a resist removal process. 金属箔除去工程及びレジスト除去工程におけるコア基板を示す概略裏面図。The schematic back view which shows the core board | substrate in a metal foil removal process and a resist removal process. 粘着テープを貼付する工程を示す説明図。Explanatory drawing which shows the process of sticking an adhesive tape. 収容工程を示す説明図。Explanatory drawing which shows a accommodation process. 収容工程におけるコア基板及びチップコンデンサを示す概略平面図。The schematic plan view which shows the core board | substrate and chip capacitor in an accommodation process. 充填工程を示す説明図。Explanatory drawing which shows a filling process. 層間絶縁層及びビア孔を形成する工程を示す説明図。Explanatory drawing which shows the process of forming an interlayer insulation layer and a via hole. 他の実施形態におけるコア基板及びチップコンデンサを示す概略裏面図。The schematic back view which shows the core board | substrate and chip capacitor in other embodiment. 他の実施形態におけるコア基板を示す概略裏面図。The schematic back view which shows the core board | substrate in other embodiment. 他の実施形態におけるコア基板を示す概略裏面図。The schematic back view which shows the core board | substrate in other embodiment. 他の実施形態におけるコア基板を示す概略裏面図。The schematic back view which shows the core board | substrate in other embodiment. 他の実施形態におけるコア基板を示す要部断面図。The principal part sectional view showing the core board in other embodiments. 他の実施形態におけるコア基板を示す要部断面図。The principal part sectional view showing the core board in other embodiments. 他の実施形態における配線基板を示す概略断面図。The schematic sectional drawing which shows the wiring board in other embodiment. 従来技術における配線基板の製造方法を示す説明図。Explanatory drawing which shows the manufacturing method of the wiring board in a prior art. 同じく、配線基板の製造方法の説明図。Similarly, explanatory drawing of the manufacturing method of a wiring board. 従来技術の問題点を示す説明図。Explanatory drawing which shows the problem of a prior art.

[第1実施形態] 以下、本発明の部品内蔵配線基板を具体化した第1実施形態を図面に基づき詳細に説明する。  First Embodiment Hereinafter, a first embodiment in which the component built-in wiring board of the present invention is embodied will be described in detail with reference to the drawings. *

図1に示されるように、本実施形態の部品内蔵配線基板10(以下「配線基板10」という)は、ICチップ搭載用の配線基板である。配線基板10は、略矩形板状のコア基板11と、コア基板11のコア主面12(図1では上面)上に形成される主面側ビルドアップ層31と、コア基板11のコア裏面13(図1では下面)上に形成される裏面側ビルドアップ層32(配線積層部)とからなる。  As shown in FIG. 1, a component built-in wiring board 10 (hereinafter referred to as “wiring board 10”) of this embodiment is a wiring board for mounting an IC chip. The wiring substrate 10 includes a substantially rectangular core substrate 11, a main surface side buildup layer 31 formed on the core main surface 12 (upper surface in FIG. 1) of the core substrate 11, and a core back surface 13 of the core substrate 11. It consists of a back-side buildup layer 32 (wiring laminate) formed on (the lower surface in FIG. 1). *

主面側ビルドアップ層31は、熱硬化性樹脂(エポキシ樹脂)からなる2層の層間絶縁層33,35と、銅からなる導体層41とを交互に積層した構造を有している。本実施形態において、主面側ビルドアップ層31の熱膨張係数は、10~60ppm/℃程度(具体的には20ppm/℃程度)となっている。なお、主面側ビルドアップ層31の熱膨張係数は、30℃~ガラス転移温度(Tg)間の測定値の平均値をいう。また、層間絶縁層33,35内には、それぞれ銅めっきによって形成された主面側ビア導体43が複数存在している。  The main surface side buildup layer 31 has a structure in which two interlayer insulating layers 33 and 35 made of a thermosetting resin (epoxy resin) and a conductor layer 41 made of copper are alternately laminated. In the present embodiment, the thermal expansion coefficient of the main surface side buildup layer 31 is about 10 to 60 ppm / ° C. (specifically, about 20 ppm / ° C.). The thermal expansion coefficient of the main surface side buildup layer 31 is an average value of measured values between 30 ° C. and the glass transition temperature (Tg). In the interlayer insulating layers 33 and 35, there are a plurality of main surface side via conductors 43 each formed by copper plating. *

図1に示されるように、第2層の層間絶縁層35の表面上には、主面側ビア導体43を介して導体層41に電気的に接続される端子パッド44がアレイ状に形成されている。本実施形態の端子パッド44は、いわゆるC4パッド(Controlled Collapsed Chip Connectionパッド)である。さらに、層間絶縁層35の表面は、ソルダーレジスト層50によってほぼ全体的に覆われている。ソルダーレジスト層50の所定箇所には、端子パッド44を露出させる開口部46が形成されている。端子パッド44の表面上には、複数のはんだバンプ45が配設されている。  As shown in FIG. 1, terminal pads 44 electrically connected to the conductor layer 41 through the main surface side via conductors 43 are formed in an array on the surface of the second interlayer insulating layer 35. ing. The terminal pad 44 of this embodiment is a so-called C4 pad (Controlled Collapsed Chip Connection pad). Further, the surface of the interlayer insulating layer 35 is almost entirely covered with the solder resist layer 50. An opening 46 for exposing the terminal pad 44 is formed at a predetermined portion of the solder resist layer 50. A plurality of solder bumps 45 are provided on the surface of the terminal pad 44. *

そして、各はんだバンプ45は、ICチップ21(半導体集積回路素子)の面接続端子22に電気的に接続されている。本実施形態のICチップ21は、縦12.0mm×横12.0mm×厚さ0.9mmの平面視矩形状をなす板状物であって、熱膨張係数が3~4ppm/℃程度(具体的には3.5ppm/℃程度)のシリコンからなる。なお、各端子パッド44及び各はんだバンプ45は、主面側ビルドアップ層31においてチップコンデンサ100,101の上方の領域に位置しており、この領域がICチップ搭載領域23となる。ICチップ搭載領域23は、ソルダーレジスト層50の表面38に設定されている。  Each solder bump 45 is electrically connected to the surface connection terminal 22 of the IC chip 21 (semiconductor integrated circuit element). The IC chip 21 of the present embodiment is a plate-like object having a rectangular shape in plan view of 12.0 mm long × 12.0 mm wide × 0.9 mm thick, and has a thermal expansion coefficient of about 3 to 4 ppm / ° C. (specifically (Specifically, about 3.5 ppm / ° C.) of silicon. Each terminal pad 44 and each solder bump 45 are located in an area above the chip capacitors 100 and 101 in the main surface side buildup layer 31, and this area becomes an IC chip mounting area 23. The IC chip mounting area 23 is set on the surface 38 of the solder resist layer 50. *

図1に示されるように、裏面側ビルドアップ層32は、上述した主面側ビルドアップ層31とほぼ同じ構造を有している。即ち、裏面側ビルドアップ層32は、熱膨張係数が10~60ppm/℃程度(具体的には20ppm/℃程度)であり、熱硬化性樹脂(エポキシ樹脂)からなる2層の層間絶縁層34,36と、銅からなる導体層42とを交互に積層した構造を有している。なお、裏面側ビルドアップ層32の熱膨張係数は、30℃~ガラス転移温度(Tg)間の測定値の平均値をいう。また、層間絶縁層34,36内には、それぞれ銅めっきによって形成された裏面側ビア導体47が複数存在している。  As shown in FIG. 1, the back surface side buildup layer 32 has substantially the same structure as the main surface side buildup layer 31 described above. That is, the back-side buildup layer 32 has a thermal expansion coefficient of about 10 to 60 ppm / ° C. (specifically, about 20 ppm / ° C.), and two interlayer insulating layers 34 made of a thermosetting resin (epoxy resin). , 36 and conductor layers 42 made of copper are alternately laminated. The thermal expansion coefficient of the back side buildup layer 32 is an average value of measured values between 30 ° C. and the glass transition temperature (Tg). In the interlayer insulating layers 34 and 36, there are a plurality of back side via conductors 47 each formed by copper plating. *

さらに、第2層の層間絶縁層36の下面上における複数箇所には、裏面側ビア導体47を介して導体層42に電気的に接続されるパッド48が格子状に形成されている。また、層間絶縁層36の下面は、ソルダーレジスト層51によってほぼ全体的に覆われている。ソルダーレジスト層51の所定箇所には、パッド48を露出させる開口部40が形成されている。パッド48の表面上には、図示しないマザーボードとの電気的な接続を図るための複数のはんだバンプ49が配設されている。そして、各はんだバンプ49により、図1に示される配線基板10は図示しないマザーボード上に実装される。  Furthermore, pads 48 electrically connected to the conductor layer 42 via the back side via conductors 47 are formed in a lattice pattern at a plurality of locations on the lower surface of the second interlayer insulating layer 36. The lower surface of the interlayer insulating layer 36 is almost entirely covered with the solder resist layer 51. An opening 40 for exposing the pad 48 is formed at a predetermined position of the solder resist layer 51. On the surface of the pad 48, a plurality of solder bumps 49 are provided for electrical connection with a mother board (not shown). The wiring board 10 shown in FIG. 1 is mounted on a mother board (not shown) by each solder bump 49. *

図1~図4に示されるように、本実施形態のコア基板11は、縦25mm×横25mm×厚さ0.8mmの平面視略矩形状である。コア基板11は、熱硬化性樹脂(エポキシ樹脂)からなり、平面方向(XY方向)における熱膨張係数が10~30ppm/℃程度(具体的には18ppm/℃)となっている。なお、コア基板11の熱膨張係数は、0℃~ガラス転移温度(Tg)間の測定値の平均値をいう。  As shown in FIGS. 1 to 4, the core substrate 11 of the present embodiment has a substantially rectangular shape in plan view of 25 mm length × 25 mm width × 0.8 mm thickness. The core substrate 11 is made of a thermosetting resin (epoxy resin), and has a thermal expansion coefficient of about 10 to 30 ppm / ° C. (specifically, 18 ppm / ° C.) in the plane direction (XY direction). The thermal expansion coefficient of the core substrate 11 is an average value of measured values between 0 ° C. and the glass transition temperature (Tg). *

また、コア基板11には、複数のスルーホール導体16がコア主面12及びコア裏面13を貫通するように形成されている。かかるスルーホール導体16は、コア基板11のコア主面12側とコア裏面13側とを接続導通している。なお、スルーホール導体16の内部は、例えばエポキシ樹脂などの充填樹脂17で埋められている。  A plurality of through-hole conductors 16 are formed in the core substrate 11 so as to penetrate the core main surface 12 and the core back surface 13. The through-hole conductor 16 connects and connects the core main surface 12 side and the core back surface 13 side of the core substrate 11. Note that the inside of the through-hole conductor 16 is filled with a filling resin 17 such as an epoxy resin. *

図1~図3に示されるように、コア基板11は、コア主面12側及びコア裏面13側の両方にて開口する2つの収容穴部90,91を有している。即ち、各収容穴部90,91は貫通穴である。また、各収容穴部90,91は、長辺10mm×短辺8mmの平面視略楕円形状をなしている。なお、コア基板11は、隣接する収容穴部90,91間に位置するブリッジ部61と、各収容穴部90,91及びブリッジ部61を取り囲む外周部62とを有している。  As shown in FIGS. 1 to 3, the core substrate 11 has two receiving holes 90 and 91 that are open on both the core main surface 12 side and the core back surface 13 side. That is, each accommodation hole 90, 91 is a through hole. Each of the receiving hole portions 90 and 91 has a substantially elliptical shape in plan view with a long side of 10 mm and a short side of 8 mm. The core substrate 11 includes a bridge portion 61 positioned between the adjacent accommodation hole portions 90 and 91, and an outer peripheral portion 62 that surrounds each of the accommodation hole portions 90 and 91 and the bridge portion 61. *

さらに、外周部62のコア主面12には、銅からなる主面側導体層71が形成され、外周部62のコア裏面13には、銅からなる裏面側導体層81が形成されている。なお、主面側導体層71は、スルーホール導体16の上端に電気的に接続され、裏面側導体層81は、スルーホール導体16の下端に電気的に接続されている。即ち、スルーホール導体16は、主面側ビルドアップ層31と裏面側ビルドアップ層32とを導通させる機能を有している。  Further, a main surface side conductor layer 71 made of copper is formed on the core main surface 12 of the outer peripheral portion 62, and a back surface side conductor layer 81 made of copper is formed on the core back surface 13 of the outer peripheral portion 62. The main surface side conductor layer 71 is electrically connected to the upper end of the through-hole conductor 16, and the back surface side conductor layer 81 is electrically connected to the lower end of the through-hole conductor 16. That is, the through-hole conductor 16 has a function of electrically connecting the main surface side buildup layer 31 and the back surface side buildup layer 32. *

図1~図4に示されるように、裏面側導体層81は、各収容穴部90,91のコア裏面13側開口を露出させるとともにブリッジ部61のコア裏面13を露出させる1つの貫通孔82を有している。即ち、裏面側導体層81は、外周部62のコア裏面13のみに形成されるプレーン状導体であり、ブリッジ部61のコア裏面13には形成されないようになっている。また、貫通孔82の開口端は、収容穴部90,91の開口端よりも外周側に位置している。さらに、裏面側導体層81は、貫通孔82の開口端からブリッジ部61に向けて張り出してなる一対の張出部83を備えている。両張出部83は、貫通孔82の開口端において互いに反対側に位置しており、互いに接近する方向に張り出している。そして、両張出部83の先端部は、平面視で曲面形状を有している。  As shown in FIGS. 1 to 4, the back surface side conductor layer 81 exposes the core back surface 13 side opening of each housing hole 90, 91 and one through hole 82 that exposes the core back surface 13 of the bridge portion 61. have. That is, the back-side conductor layer 81 is a plain conductor formed only on the core back surface 13 of the outer peripheral portion 62, and is not formed on the core back surface 13 of the bridge portion 61. Further, the opening end of the through hole 82 is located on the outer peripheral side with respect to the opening ends of the accommodation hole portions 90 and 91. Furthermore, the back-side conductor layer 81 includes a pair of protruding portions 83 that are extended from the opening end of the through hole 82 toward the bridge portion 61. The two overhang portions 83 are located on opposite sides of the open end of the through hole 82 and project in a direction approaching each other. And the front-end | tip part of both the overhang | projection parts 83 has a curved surface shape by planar view. *

一方、主面側導体層71は、上述した裏面側導体層81とほぼ同じ構造を有している。即ち、図1,図3,図4,図17に示されるように、主面側導体層71は、各収容穴部90,91のコア主面12側開口を露出させるとともにブリッジ部61のコア主面12を露出させる1つの貫通孔72を有している。即ち、主面側導体層71は、外周部62のコア主面12のみに形成されるプレーン状導体であり、ブリッジ部61のコア主面12には形成されないようになっている。また、貫通孔72の開口端は、収容穴部90,91の開口端よりも外周側に位置している。さらに、主面側導体層71は、貫通孔72の開口端からブリッジ部61に向けて張り出してなる一対の張出部73を備えている。両張出部73は、貫通孔72の開口端において互いに反対側に位置しており、互いに接近する方向に張り出している。そして、両張出部73の先端部は、平面視で曲面形状を有している。  On the other hand, the main surface side conductor layer 71 has substantially the same structure as the back surface side conductor layer 81 described above. That is, as shown in FIGS. 1, 3, 4, and 17, the main surface side conductor layer 71 exposes the core main surface 12 side opening of each housing hole 90, 91 and also the core of the bridge portion 61. One through-hole 72 that exposes the main surface 12 is provided. That is, the main surface side conductor layer 71 is a plain conductor formed only on the core main surface 12 of the outer peripheral portion 62, and is not formed on the core main surface 12 of the bridge portion 61. Further, the opening end of the through hole 72 is located on the outer peripheral side with respect to the opening ends of the accommodation hole portions 90 and 91. Further, the main surface side conductor layer 71 includes a pair of projecting portions 73 that project from the opening end of the through hole 72 toward the bridge portion 61. The two overhanging portions 73 are located on opposite sides of the opening end of the through hole 72 and project in a direction approaching each other. And the front-end | tip part of both the overhang | projection parts 73 has a curved surface shape by planar view. *

なお、図3に示されるように、ブリッジ部61の厚さT1は外周部62の厚さT2と等しい(具体的には0.8mm)ため、ブリッジ部61の厚さT1は、外周部62と主面側導体層71と裏面側導体層81との合計の厚さよりも薄くなっている。また、ブリッジ部61の厚さT1は、外周部62と主面側導体層71との合計の厚さ、及び、外周部62と裏面側導体層81との合計の厚さT3よりも薄くなっている。  As shown in FIG. 3, since the thickness T1 of the bridge portion 61 is equal to the thickness T2 of the outer peripheral portion 62 (specifically 0.8 mm), the thickness T1 of the bridge portion 61 is equal to the outer peripheral portion 62. And the main surface side conductor layer 71 and the back surface side conductor layer 81 are thinner than the total thickness. The thickness T1 of the bridge portion 61 is thinner than the total thickness of the outer peripheral portion 62 and the main surface side conductor layer 71 and the total thickness T3 of the outer peripheral portion 62 and the back surface side conductor layer 81. ing. *

図1~図4に示されるように、収容穴部90内には、チップコンデンサ100(部品)が埋め込まれた状態で収容され、収容穴部91内には、同じくチップコンデンサ101(部品)が埋め込まれた状態で収容されている。なお、各チップコンデンサ100,101は、コア基板11のコア主面12とコンデンサ主面102とを同じ側に向け、かつ、コア基板11のコア裏面13とコンデンサ裏面103とを同じ側に向けた状態で収容されている。また、チップコンデンサ100,101は、コア基板11においてICチップ搭載領域23の真下の領域に配置されている。  As shown in FIGS. 1 to 4, the chip capacitor 100 (component) is housed in the housing hole 90, and the chip capacitor 101 (component) is similarly housed in the housing hole 91. It is housed in an embedded state. The chip capacitors 100 and 101 have the core main surface 12 and the capacitor main surface 102 of the core substrate 11 facing the same side, and the core back surface 13 and the capacitor back surface 103 of the core substrate 11 facing the same side. Contained in state. Further, the chip capacitors 100 and 101 are arranged in a region immediately below the IC chip mounting region 23 in the core substrate 11. *

図1,図2,図5~図7に示されるように、チップコンデンサ100,101は、部品主面である1つのコンデンサ主面102(図1では上面)、部品裏面である1つのコンデンサ裏面103(図1では下面)、及び、部品側面である4つのコンデンサ側面104を有している。なお、コンデンサ主面102の上には、主面側ビルドアップ層31を構成する層間絶縁層33が形成され、コンデンサ裏面103の上には、裏面側ビルドアップ層32を構成する層間絶縁層34が形成されている。また、チップコンデンサ100,101は、セラミック誘電体層105(誘電体層)を介して電源用内部電極層141(内部電極層)とグランド用内部電極層142(内部電極層)とが交互に積層配置されたセラミック焼結体106を備えている。本実施形態のセラミック焼結体106は、縦6.0mm×横4.0mm×厚さ0.8mmの平面視略矩形状をなす板状物である。即ち、セラミック焼結体106の厚さは、コア基板11の厚さ(0.8mm)と等しくなっている。また、セラミック焼結体106の熱膨張係数は、8~12ppm/℃程度であり、具体的には9.5ppm/℃程度となっている。なお、セラミック焼結体106の熱膨張係数は、30℃~250℃間の測定値の平均値をいう。また、セラミック誘電体層105は、高誘電体セラミックの一種であるチタン酸バリウムの焼結体からなり、電源用内部電極層141及びグランド用内部電極層142間の誘電体(絶縁体)として機能する。電源用内部電極層141及びグランド用内部電極層142は、いずれもニッケルを主成分として形成された層であって、セラミック焼結体106の内部において一層おきに配置されている。  As shown in FIGS. 1, 2, and 5 to 7, the chip capacitors 100 and 101 have one capacitor main surface 102 (upper surface in FIG. 1) as a component main surface and one capacitor back surface as a component back surface. 103 (lower surface in FIG. 1) and four capacitor side surfaces 104 which are component side surfaces. An interlayer insulating layer 33 constituting the main surface side buildup layer 31 is formed on the capacitor main surface 102, and an interlayer insulating layer 34 constituting the back surface side buildup layer 32 is formed on the capacitor back surface 103. Is formed. In addition, the chip capacitors 100 and 101 are alternately stacked with the power supply internal electrode layer 141 (internal electrode layer) and the ground internal electrode layer 142 (internal electrode layer) through the ceramic dielectric layer 105 (dielectric layer). The ceramic sintered body 106 arranged is provided. The ceramic sintered body 106 of the present embodiment is a plate-like object having a substantially rectangular shape in plan view with a length of 6.0 mm, a width of 4.0 mm, and a thickness of 0.8 mm. That is, the thickness of the ceramic sintered body 106 is equal to the thickness (0.8 mm) of the core substrate 11. The thermal expansion coefficient of the ceramic sintered body 106 is about 8 to 12 ppm / ° C., specifically about 9.5 ppm / ° C. The thermal expansion coefficient of the ceramic sintered body 106 is an average value of measured values between 30 ° C. and 250 ° C. The ceramic dielectric layer 105 is made of a sintered body of barium titanate, which is a kind of high dielectric ceramic, and functions as a dielectric (insulator) between the power internal electrode layer 141 and the ground internal electrode layer 142. To do. Each of the power supply internal electrode layer 141 and the ground internal electrode layer 142 is a layer formed mainly of nickel, and is disposed in every other layer in the ceramic sintered body 106. *

図1,図2,図5~図7に示されるように、セラミック焼結体106において互いに対向する一対のコンデンサ側面104には、電源用電極111及びグランド用電極121がそれぞれ設けられている。電源用電極111のコンデンサ主面側端部112及びコンデンサ裏面側端部113は、それぞれコンデンサ主面102上及びコンデンサ裏面103上に位置している。同様に、グランド用電極121のコンデンサ主面側端部122及びコンデンサ裏面側端部123も、それぞれコンデンサ主面102上及びコンデンサ裏面103上に位置している。さらに、電源用電極111は複数の電源用内部電極層141に接続され、グランド用電極121は複数のグランド用内部電極層142に接続されている。また、電極111,121は、ニッケルを主材料として形成され、表面が図示しない銅めっき層によって被覆されている。  As shown in FIGS. 1, 2, and 5 to 7, a power supply electrode 111 and a ground electrode 121 are provided on a pair of capacitor side surfaces 104 facing each other in the ceramic sintered body 106, respectively. The capacitor main surface side end portion 112 and the capacitor back surface side end portion 113 of the power supply electrode 111 are located on the capacitor main surface 102 and the capacitor back surface 103, respectively. Similarly, the capacitor main surface side end portion 122 and the capacitor back surface side end portion 123 of the ground electrode 121 are also located on the capacitor main surface 102 and the capacitor back surface 103, respectively. Further, the power supply electrode 111 is connected to the plurality of power supply internal electrode layers 141, and the ground electrode 121 is connected to the plurality of ground internal electrode layers 142. The electrodes 111 and 121 are made of nickel as a main material, and the surface is covered with a copper plating layer (not shown). *

例えば、電極111,121側から通電を行い、電源用内部電極層141-グランド用内部電極層142間に電圧を加えると、電源用内部電極層141に例えばプラスの電荷が蓄積し、グランド用内部電極層142に例えばマイナスの電荷が蓄積する。その結果、チップコンデンサ100,101がコンデンサとして機能する。  For example, when energization is performed from the electrodes 111 and 121 side and a voltage is applied between the internal electrode layer 141 for power supply and the internal electrode layer 142 for ground, for example, positive charges are accumulated in the internal electrode layer 141 for power supply, For example, negative charges accumulate in the electrode layer 142. As a result, the chip capacitors 100 and 101 function as capacitors. *


 また、チップコンデンサ100,101の電源用電極111は、主面側ビア導体43、導体層41、端子パッド44及びはんだバンプ45からなる電源導通経路を介して、ICチップ21の面接続端子22に電気的に接続されている。そして、チップコンデンサ100,101のグランド用電極121は、主面側ビア導体43、導体層41、端子パッド44及びはんだバンプ45からなるグランド導通経路を介して、ICチップ21の面接続端子22に電気的に接続されている。その結果、チップコンデンサ100,101からICチップ21への電源供給が可能となる。

The power supply electrodes 111 of the chip capacitors 100 and 101 are connected to the surface connection terminals 22 of the IC chip 21 through a power supply conduction path including the main surface side via conductors 43, the conductor layers 41, the terminal pads 44 and the solder bumps 45. Electrically connected. Then, the ground electrodes 121 of the chip capacitors 100 and 101 are connected to the surface connection terminals 22 of the IC chip 21 through a ground conduction path including the main surface side via conductors 43, the conductor layers 41, the terminal pads 44 and the solder bumps 45. Electrically connected. As a result, power can be supplied from the chip capacitors 100 and 101 to the IC chip 21.

図1,図2に示されるように、収容穴部90の内壁面92とチップコンデンサ100のコンデンサ側面104との隙間、及び、収容穴部91の内壁面92とチップコンデンサ101のコンデンサ側面104との隙間には、高分子材料(本実施形態では、熱硬化性樹脂であるエポキシ樹脂)からなる樹脂充填材93が充填されている。この樹脂充填材93は、各チップコンデンサ100,101をコア基板11に固定する機能を有している。さらに、ブリッジ部61のコア主面12(表面)と主面側ビルドアップ層31を構成する層間絶縁層33との隙間、及び、ブリッジ部61のコア裏面13(表面)と裏面側ビルドアップ層32を構成する層間絶縁層34との隙間は、樹脂充填材93の一部で埋められている。なお、本実施形態では、収容穴部90,91の内壁面92とチップコンデンサ100,101のコンデンサ側面104との隙間の大きさが1mmに設定されている。そして、樹脂充填材93においてブリッジ部61のコア主面12の上に貼付される部分の厚さ、及び、樹脂充填材93においてブリッジ部61のコア裏面13の上に貼付される部分の厚さは、それぞれ50μmに設定されている。  As shown in FIGS. 1 and 2, the gap between the inner wall surface 92 of the accommodation hole 90 and the capacitor side surface 104 of the chip capacitor 100, and the inner wall surface 92 of the accommodation hole portion 91 and the capacitor side surface 104 of the chip capacitor 101 The gap is filled with a resin filler 93 made of a polymer material (in this embodiment, an epoxy resin which is a thermosetting resin). The resin filler 93 has a function of fixing the chip capacitors 100 and 101 to the core substrate 11. Furthermore, the gap between the core main surface 12 (front surface) of the bridge portion 61 and the interlayer insulating layer 33 constituting the main surface side buildup layer 31, and the core back surface 13 (front surface) and back surface side buildup layer of the bridge portion 61. A gap with the interlayer insulating layer 34 constituting 32 is filled with a part of the resin filler 93. In the present embodiment, the size of the gap between the inner wall surface 92 of the receiving hole portions 90 and 91 and the capacitor side surface 104 of the chip capacitors 100 and 101 is set to 1 mm. And the thickness of the part affixed on the core main surface 12 of the bridge part 61 in the resin filler 93, and the thickness of the part affixed on the core back surface 13 of the bridge part 61 in the resin filler 93 Is set to 50 μm. *

次に、本実施形態の配線基板10の製造方法を説明する。  Next, the manufacturing method of the wiring board 10 of this embodiment is demonstrated. *

まず、コア基板準備工程では、コア基板11の中間製品を従来周知の手法により作製し、あらかじめ準備しておく。具体的に言うと、基材151のコア主面12に主面側導体層71となる銅箔152が貼付されるとともに、基材151のコア裏面13に裏面側導体層81となる銅箔152(金属箔)が貼付された銅張積層板150(図8参照)を準備し、これをコア基板11の中間製品とする。なお、本実施形態の基材151は、縦400mm×横400mm×厚さ0.8mmの平面視矩形状をなす板状物である。また、コア基板11の中間製品とは、コア基板11となるべき領域を平面方向に沿って縦横に複数配列した構造の多数個取り用コア基板である。  First, in the core substrate preparation step, an intermediate product of the core substrate 11 is prepared by a conventionally known method and prepared in advance. Specifically, a copper foil 152 that becomes the main surface side conductor layer 71 is affixed to the core main surface 12 of the base material 151, and a copper foil 152 that becomes the back surface side conductor layer 81 on the core back surface 13 of the base material 151. A copper-clad laminate 150 (see FIG. 8) to which (metal foil) is attached is prepared, and this is used as an intermediate product of the core substrate 11. In addition, the base material 151 of the present embodiment is a plate-like object having a rectangular shape in plan view of 400 mm in length, 400 mm in width, and 0.8 mm in thickness. The intermediate product of the core substrate 11 is a multi-piece core substrate having a structure in which a plurality of regions to be the core substrate 11 are arranged vertically and horizontally along the plane direction. *

次に、コア基板11(銅張積層板150)に対してドリル機を用いて孔あけ加工を行い、スルーホール導体16を形成するための貫通孔を所定位置にあらかじめ形成しておく。次に、貫通孔の内壁面、コア主面12及びコア裏面13を含むコア基板11の表面全体に対して無電解銅めっきを行った後に電解銅めっきを行う。その結果、貫通孔の内壁面に、スルーホール導体16となるめっき層161が形成される(図9参照)。さらに、コア主面12に主面側導体層71となるめっき層162が形成されるとともに、コア裏面13に裏面側導体層81となるめっき層163が形成される(図9参照)。その後、スルーホール導体16となるめっき層161の空洞部を絶縁樹脂材料(エポキシ樹脂)で穴埋めし、充填樹脂17を形成する(図9参照)。次に、従来公知の手法に従って無電解銅めっきを行うことにより、めっき層162,163の表面にめっき層164(図9参照)を形成する。  Next, drilling is performed on the core substrate 11 (copper-clad laminate 150) using a drill, and through holes for forming the through-hole conductors 16 are formed in advance at predetermined positions. Next, after performing electroless copper plating on the entire surface of the core substrate 11 including the inner wall surface of the through hole, the core main surface 12 and the core back surface 13, the electrolytic copper plating is performed. As a result, a plating layer 161 to be the through-hole conductor 16 is formed on the inner wall surface of the through hole (see FIG. 9). Further, a plating layer 162 to be the main surface side conductor layer 71 is formed on the core main surface 12, and a plating layer 163 to be the back surface side conductor layer 81 is formed on the core back surface 13 (see FIG. 9). Thereafter, the hollow portion of the plating layer 161 to be the through-hole conductor 16 is filled with an insulating resin material (epoxy resin) to form a filling resin 17 (see FIG. 9). Next, a plating layer 164 (see FIG. 9) is formed on the surfaces of the plating layers 162 and 163 by performing electroless copper plating according to a conventionally known method. *

コア基板準備工程後の収容穴部形成工程では、コア基板11に対してルータを用いて孔あけ加工を行い、収容穴部90,91を複数形成する(図9,図10参照)。この時点で、外周部62とブリッジ部61とを有するコア基板11が得られる。  In the accommodation hole forming step after the core substrate preparation step, the core substrate 11 is punched using a router to form a plurality of accommodation holes 90 and 91 (see FIGS. 9 and 10). At this point, the core substrate 11 having the outer peripheral portion 62 and the bridge portion 61 is obtained. *

収容穴部形成工程後の導体層形成工程では、外周部62のコア主面12に主面側導体層71を形成するとともに、外周部62のコア裏面13に裏面側導体層81を形成する。具体的には、めっき層162~164のエッチングを行って、めっき層162~164を例えばサブトラクティブ法によってパターニングする。詳述すると、まず、レジスト形成工程を行い、コア主面12側のめっき層164の表面上、及び、コア裏面13側のめっき層164の表面上に対して、それぞれドライフィルムをラミネートする。次に、各ドライフィルムに対して露光及び現像を行うことにより、1つの開口部171を有するめっきレジスト170を形成する(図11,図12参照)。なお、コア主面12側に形成されためっきレジスト170の開口部171からは、各収容穴部90,91と、ブリッジ部61のコア主面12上の部位であるめっき層164全体と、外周部62のコア主面12上に形成されためっき層164の一部とが露出する。また、コア裏面13側に形成されためっきレジスト170の開口部171からは、各収容穴部90,91と、ブリッジ部61のコア裏面13上の部位であるめっき層164全体と、外周部62のコア裏面13上に形成されためっき層164の一部とが露出する。この状態で、金属箔除去工程を行い、めっき層162~164における開口部171からの露出部分をエッチングすることにより、銅箔152とめっき層162~164とを部分的に除去する(図13,図14参照)。その後、レジスト除去工程を行い、めっきレジスト170を剥離(除去)する。その結果、コア主面12上に主面側導体層71が形成されるとともに、コア裏面13上に裏面側導体層81が形成される(図13,図14参照)。このとき、ブリッジ部61の厚さT1(図3参照)が、外周部62と主面側導体層71との合計の厚さ、及び、外周部62と裏面側導体層81との合計の厚さT3(図3参照)よりも薄くなる。また、コア主面12側のめっき層164の一部が、スルーホール導体16のコア主面12側の端面を覆う蓋めっき層となり、コア裏面13側のめっき層164の一部が、スルーホール導体16のコア裏面13側の端面を覆う蓋めっき層となる。  In the conductor layer forming step after the housing hole forming step, the main surface side conductor layer 71 is formed on the core main surface 12 of the outer peripheral portion 62, and the back surface side conductor layer 81 is formed on the core back surface 13 of the outer peripheral portion 62. Specifically, the plating layers 162 to 164 are etched, and the plating layers 162 to 164 are patterned by, for example, a subtractive method. More specifically, first, a resist forming step is performed, and a dry film is laminated on the surface of the plating layer 164 on the core main surface 12 side and on the surface of the plating layer 164 on the core back surface 13 side. Next, by performing exposure and development on each dry film, a plating resist 170 having one opening 171 is formed (see FIGS. 11 and 12). From the opening 171 of the plating resist 170 formed on the core main surface 12 side, each of the receiving hole portions 90 and 91, the entire plating layer 164 that is a portion on the core main surface 12 of the bridge portion 61, and the outer periphery A part of the plating layer 164 formed on the core main surface 12 of the part 62 is exposed. In addition, from the opening 171 of the plating resist 170 formed on the core back surface 13 side, each of the receiving hole portions 90 and 91, the entire plating layer 164 that is a portion of the bridge portion 61 on the core back surface 13, and the outer peripheral portion 62. A part of the plating layer 164 formed on the core back surface 13 is exposed. In this state, the metal foil removing step is performed, and the exposed portions from the openings 171 in the plating layers 162 to 164 are etched to partially remove the copper foil 152 and the plating layers 162 to 164 (FIG. 13, FIG. (See FIG. 14). Thereafter, a resist removing step is performed, and the plating resist 170 is peeled (removed). As a result, the main surface side conductor layer 71 is formed on the core main surface 12, and the back surface side conductor layer 81 is formed on the core back surface 13 (see FIGS. 13 and 14). At this time, the thickness T1 (see FIG. 3) of the bridge portion 61 is the total thickness of the outer peripheral portion 62 and the main surface side conductor layer 71 and the total thickness of the outer peripheral portion 62 and the back surface side conductor layer 81. It is thinner than T3 (see FIG. 3). Further, a part of the plating layer 164 on the core main surface 12 side becomes a lid plating layer covering the end surface on the core main surface 12 side of the through-hole conductor 16, and a part of the plating layer 164 on the core back surface 13 side becomes a through-hole. This is a lid plating layer that covers the end surface of the conductor 16 on the core back surface 13 side. *

また、部品準備工程(コンデンサ準備工程)では、2つのチップコンデンサ100,101を従来周知の手法により作製し、あらかじめ準備しておく。
In the component preparation step (capacitor preparation step), the two chip capacitors 100 and 101 are prepared by a conventionally known method and prepared in advance.

チップコンデンサ100,101は以下のように作製される。即ち、セラミックのグリーンシートを形成し、このグリーンシートに内部電極用ニッケルペーストをスクリーン印刷して乾燥させる。その結果、後に電源用内部電極層141となる電源用内部電極部と、グランド用内部電極層142となるグランド用内部電極部とが形成される。次に、電源用内部電極部が形成されたグリーンシートとグランド用内部電極部が形成されたグリーンシートとを交互に積層し、シート積層方向に押圧力を付与することにより、各グリーンシートを一体化してグリーンシート積層体を形成する。  The chip capacitors 100 and 101 are manufactured as follows. That is, a ceramic green sheet is formed, and a nickel paste for internal electrodes is screen printed on the green sheet and dried. As a result, a power internal electrode portion that will later become the power internal electrode layer 141 and a ground internal electrode portion that will become the ground internal electrode layer 142 are formed. Next, the green sheets with the power supply internal electrode portions and the green sheets with the ground internal electrode portions are alternately stacked, and each green sheet is integrated by applying a pressing force in the sheet stacking direction. To form a green sheet laminate. *

さらに、グリーンシート積層体の上面上、下面上及び側面上にペーストを印刷し、グリーンシート積層体の側面側にて各電極部の側端面を覆うように電源用電極111及びグランド用電極121を形成する。この後、グリーンシート積層体の乾燥を行い、各電極111,121をある程度固化させる。次に、グリーンシート積層体を脱脂し、さらに所定温度で所定時間焼成を行う。その結果、チタン酸バリウム及びペースト中のニッケルが同時焼結し、セラミック焼結体106となる。次に、得られたセラミック焼結体106が有する各電極111,121に対して無電解銅めっき(厚さ10μm程度)を行う。その結果、各電極111,121の上に銅めっき層が形成され、チップコンデンサ100,101が完成する。  Furthermore, the paste is printed on the upper surface, the lower surface, and the side surface of the green sheet laminate, and the power supply electrode 111 and the ground electrode 121 are formed so as to cover the side end surfaces of the electrode portions on the side surface side of the green sheet laminate. Form. Thereafter, the green sheet laminate is dried to solidify the electrodes 111 and 121 to some extent. Next, the green sheet laminate is degreased and fired at a predetermined temperature for a predetermined time. As a result, barium titanate and nickel in the paste are simultaneously sintered to form a ceramic sintered body 106. Next, electroless copper plating (thickness of about 10 μm) is performed on each of the electrodes 111 and 121 included in the obtained ceramic sintered body 106. As a result, a copper plating layer is formed on the electrodes 111 and 121, and the chip capacitors 100 and 101 are completed. *

導体層形成工程及び部品準備工程後の収容工程では、まず、各収容穴部90,91のコア裏面13側開口を、剥離可能な粘着テープ181でシールする(図15参照)。このとき、外周部62のコア裏面13に形成された裏面側導体層81には粘着テープ181の粘着面が密着する一方、ブリッジ部61のコア裏面13からは粘着面が離間した状態になる。なお、粘着テープ181は、支持テーブル(図示略)によって支持されている。次に、マウント装置(ヤマハ発動機株式会社製)を用いて、コア主面12とコンデンサ主面102とを同じ側に向け、かつ、コア裏面13とコンデンサ裏面103とを同じ側に向けた状態で、各収容穴部90,91内にそれぞれチップコンデンサ100,101を収容する(図16,図17参照)。このとき、チップコンデンサ100,101は、コンデンサ裏面103が粘着テープ181の粘着面に貼り付けられることにより仮固定される。  In the housing step after the conductor layer forming step and the component preparation step, first, the opening on the core back surface 13 side of each housing hole 90, 91 is sealed with a peelable adhesive tape 181 (see FIG. 15). At this time, the adhesive surface of the adhesive tape 181 is in close contact with the back-side conductor layer 81 formed on the core back surface 13 of the outer peripheral portion 62, while the adhesive surface is separated from the core back surface 13 of the bridge portion 61. The adhesive tape 181 is supported by a support table (not shown). Next, using a mounting device (manufactured by Yamaha Motor Co., Ltd.), the core main surface 12 and the capacitor main surface 102 are directed to the same side, and the core back surface 13 and the capacitor back surface 103 are directed to the same side. Thus, the chip capacitors 100 and 101 are accommodated in the accommodating holes 90 and 91, respectively (see FIGS. 16 and 17). At this time, the chip capacitors 100 and 101 are temporarily fixed by attaching the capacitor back surface 103 to the adhesive surface of the adhesive tape 181. *

続く充填工程では、収容穴部90の内壁面92とチップコンデンサ100のコンデンサ側面104との隙間、及び、収容穴部91の内壁面92とチップコンデンサ101のコンデンサ側面104との隙間に、ディスペンサ装置(Asymtek社製)を用いて、熱硬化性樹脂製の樹脂充填材93(株式会社ナミックス製)を充填する(図18参照)。このとき、樹脂充填材93の一部でブリッジ部61のコア主面12及びコア裏面13が覆われるようになる。充填工程後の固定工程では、樹脂充填材93を硬化させることにより、チップコンデンサ100,101を収容穴部90,91内に固定する。そして、固定工程後、粘着テープ181を剥離(除去)する。その後、導体層71,81の表面、ブリッジ部61のコア主面12を覆う樹脂充填材93の表面94、及び、ブリッジ部61のコア裏面13を覆う樹脂充填材93の表面95などの粗化を行う。  In the subsequent filling step, a dispenser device is provided in the gap between the inner wall surface 92 of the accommodation hole 90 and the capacitor side surface 104 of the chip capacitor 100 and the gap between the inner wall surface 92 of the accommodation hole portion 91 and the capacitor side surface 104 of the chip capacitor 101. A resin filler 93 made of a thermosetting resin (manufactured by NAMICS Co., Ltd.) is filled using (manufactured by Asymtek) (see FIG. 18). At this time, the core main surface 12 and the core back surface 13 of the bridge portion 61 are covered with a part of the resin filler 93. In the fixing step after the filling step, the chip capacitors 100 and 101 are fixed in the accommodation holes 90 and 91 by curing the resin filler 93. Then, after the fixing step, the adhesive tape 181 is peeled (removed). Thereafter, the surface of the conductor layers 71, 81, the surface 94 of the resin filler 93 covering the core main surface 12 of the bridge portion 61, and the surface 95 of the resin filler 93 covering the core back surface 13 of the bridge portion 61 are roughened. I do. *

固定工程後の配線積層部形成工程では、従来周知の手法に基づいて、コア主面12の上に主面側ビルドアップ層31を形成するとともに、コア裏面13の上に裏面側ビルドアップ層32を形成する。具体的に言うと、まず、樹脂充填材93の表面94上及びコンデンサ主面102上に熱硬化性エポキシ樹脂を被着することにより、層間絶縁層33を形成する(図19参照)。また、樹脂充填材93の表面95上及びコンデンサ裏面103上に熱硬化性エポキシ樹脂を被着することにより、層間絶縁層34を形成する(図19参照)。  In the wiring laminated portion forming step after the fixing step, the main surface side buildup layer 31 is formed on the core main surface 12 and the back surface side buildup layer 32 is formed on the core back surface 13 based on a conventionally known method. Form. Specifically, first, an interlayer insulating layer 33 is formed by depositing a thermosetting epoxy resin on the surface 94 of the resin filler 93 and the capacitor main surface 102 (see FIG. 19). Further, an interlayer insulating layer 34 is formed by depositing a thermosetting epoxy resin on the surface 95 of the resin filler 93 and the capacitor back surface 103 (see FIG. 19). *

さらに、YAGレーザーまたは炭酸ガスレーザーを用いてレーザー孔あけ加工を行い、主面側ビア導体43が形成されるべき位置にビア孔191を形成するとともに、裏面側ビア導体47が形成されるべき位置にビア孔192を形成する(図19参照)。具体的には、層間絶縁層33を貫通するビア孔191を形成し、チップコンデンサ100,101を構成する電極111,121の表面(コンデンサ主面102側の面)を露出させる。また、層間絶縁層34を貫通するビア孔192を形成し、チップコンデンサ100,101を構成する電極111,121の表面(コンデンサ裏面103側の面)を露出させる。そして、層間絶縁層33,34の表面上、及び、ビア孔191,192の内面に対する無電解銅めっきを行った後にエッチングレジストを形成し、次いで電解銅めっきを行う。さらに、エッチングレジストを除去してソフトエッチングを行う。その結果、層間絶縁層33上に導体層41がパターン形成されるとともに、層間絶縁層34上に導体層42がパターン形成される(図20参照)。これと同時に、各ビア孔191,192の内部にビア導体43,47が形成される。  Further, laser drilling is performed using a YAG laser or a carbon dioxide gas laser to form a via hole 191 at a position where the main surface side via conductor 43 is to be formed and a position where the back surface side via conductor 47 is to be formed. A via hole 192 is formed in (see FIG. 19). Specifically, a via hole 191 penetrating the interlayer insulating layer 33 is formed to expose the surfaces (surfaces on the capacitor main surface 102 side) of the electrodes 111 and 121 constituting the chip capacitors 100 and 101. Also, a via hole 192 that penetrates the interlayer insulating layer 34 is formed to expose the surfaces (surfaces on the capacitor back surface 103 side) of the electrodes 111 and 121 constituting the chip capacitors 100 and 101. Then, after performing electroless copper plating on the surfaces of the interlayer insulating layers 33 and 34 and the inner surfaces of the via holes 191 and 192, an etching resist is formed, and then electrolytic copper plating is performed. Further, the etching resist is removed and soft etching is performed. As a result, the conductor layer 41 is patterned on the interlayer insulating layer 33 and the conductor layer 42 is patterned on the interlayer insulating layer 34 (see FIG. 20). At the same time, via conductors 43 and 47 are formed in the via holes 191 and 192, respectively. *

次に、層間絶縁層33上に熱硬化性エポキシ樹脂を被着し、レーザー孔あけ加工を行うことにより、主面側ビア導体43が形成されるべき位置にビア孔(図示略)を有する層間絶縁層35を形成する。また、層間絶縁層34上に熱硬化性エポキシ樹脂を被着し、レーザー孔あけ加工を行うことにより、裏面側ビア導体47が形成されるべき位置にビア孔(図示略)を有する層間絶縁層36を形成する。次に、従来公知の手法に従って電解銅めっきを行い、ビア孔の内部にビア導体43,47を形成する。これと同時に、層間絶縁層35,36上に端子パッド44を形成するとともに、層間絶縁層35,36上にパッド48を形成する。  Next, an interlayer having a via hole (not shown) at a position where the main surface side via conductor 43 is to be formed by depositing a thermosetting epoxy resin on the interlayer insulating layer 33 and performing laser drilling. An insulating layer 35 is formed. Further, an interlayer insulating layer having via holes (not shown) at positions where the back side via conductors 47 are to be formed by depositing a thermosetting epoxy resin on the interlayer insulating layer 34 and performing laser drilling. 36 is formed. Next, electrolytic copper plating is performed according to a conventionally known method to form via conductors 43 and 47 inside the via holes. At the same time, the terminal pads 44 are formed on the interlayer insulating layers 35 and 36, and the pads 48 are formed on the interlayer insulating layers 35 and 36. *

次に、層間絶縁層35,36上に感光性エポキシ樹脂を塗布することにより、ソルダーレジスト層50,51を形成する。次に、所定のマスクを配置した状態で露光及び現像を行い、ソルダーレジスト層50,51に開口部40,46を形成する。さらに、端子パッド44上にはんだバンプ45を形成し、かつ、パッド48上にはんだバンプ49を形成する。なお、この状態のものは、配線基板10となるべき製品領域を平面方向に沿って縦横に複数配列した多数個取り用配線基板であると把握することができる。さらに、多数個取り用配線基板を分割すると、個々の製品である配線基板10が多数個同時に得られる。  Next, solder resist layers 50 and 51 are formed by applying a photosensitive epoxy resin on the interlayer insulating layers 35 and 36. Next, exposure and development are performed in a state where a predetermined mask is disposed, and openings 40 and 46 are formed in the solder resist layers 50 and 51. Further, solder bumps 45 are formed on the terminal pads 44, and solder bumps 49 are formed on the pads 48. It can be understood that the product in this state is a multi-cavity wiring board in which a plurality of product regions to be the wiring board 10 are arranged vertically and horizontally along the plane direction. Furthermore, when the multi-cavity wiring board is divided, a large number of wiring boards 10 which are individual products can be obtained simultaneously. *

次に、配線基板10を構成する主面側ビルドアップ層31のICチップ搭載領域23にICチップ21を載置する。このとき、ICチップ21側の面接続端子22と、各はんだバンプ45とを位置合わせするようにする。そして、220℃~240℃程度の温度に加熱して各はんだバンプ45をリフローすることにより、各はんだバンプ45と面接続端子22とを接合し、配線基板10側とICチップ21側とを電気的に接続する。その結果、ICチップ搭載領域23にICチップ21が搭載される(図1参照)。  Next, the IC chip 21 is placed in the IC chip mounting region 23 of the main surface side buildup layer 31 constituting the wiring board 10. At this time, the surface connection terminals 22 on the IC chip 21 side and the respective solder bumps 45 are aligned. Then, each solder bump 45 is reflowed by heating to a temperature of about 220 ° C. to 240 ° C., thereby joining each solder bump 45 and the surface connection terminal 22 to electrically connect the wiring substrate 10 side and the IC chip 21 side. Connect. As a result, the IC chip 21 is mounted in the IC chip mounting area 23 (see FIG. 1). *

従って、本実施形態によれば以下の効果を得ることができる。  Therefore, according to the present embodiment, the following effects can be obtained. *

(1)例えば、図47に示されるように、裏面側導体層206がブリッジ部212のコア裏面202に形成されていると、裏面側導体層206と粘着テープ210との間に樹脂充填材211が潜り込んでしまい、コア裏面202側に形成される裏面側ビルドアップ層と裏面側導体層206との密着性に問題が生じるおそれがある。そこで、本実施形態の配線基板10では、ブリッジ部61を取り囲むように裏面側導体層81を形成し、ブリッジ部61には裏面側導体層81を形成しないようにしている。この場合、ブリッジ部61の表面(コア裏面13)と裏面側ビルドアップ層32との隙間が、樹脂充填材93の一部で埋められるため、上記した潜り込みが発生しにくくなる。ゆえに、コア基板11と裏面側ビルドアップ層32とが確実に密着するようになるため、信頼性に優れた配線基板10を得ることができる。  (1) For example, as shown in FIG. 47, when the back side conductor layer 206 is formed on the core back side 202 of the bridge portion 212, the resin filler 211 is interposed between the back side conductor layer 206 and the adhesive tape 210. May sink and cause a problem in the adhesion between the back-side buildup layer formed on the core back surface 202 side and the back-side conductor layer 206. Therefore, in the wiring substrate 10 of this embodiment, the back surface side conductor layer 81 is formed so as to surround the bridge portion 61, and the back surface side conductor layer 81 is not formed in the bridge portion 61. In this case, since the gap between the front surface (core back surface 13) of the bridge portion 61 and the back-side buildup layer 32 is filled with a part of the resin filler 93, the above-described submergence hardly occurs. Therefore, since the core substrate 11 and the back surface side buildup layer 32 come into close contact with each other, the wiring substrate 10 having excellent reliability can be obtained. *

また、上記した樹脂充填材の潜り込みが防止されることから、ブリッジ部61のコア裏面13側に樹脂充填材93の盛り上がり部分が形成されにくくなる。よって、コア裏面13に接する裏面側ビルドアップ層32(ソルダーレジスト層51)の表面39を平坦にすることができ、裏面側ビルドアップ層32の寸法精度が向上する。  In addition, since the above-described resin filler is prevented from sinking, the raised portion of the resin filler 93 is hardly formed on the core back surface 13 side of the bridge portion 61. Therefore, the surface 39 of the back surface side buildup layer 32 (solder resist layer 51) in contact with the core back surface 13 can be flattened, and the dimensional accuracy of the back surface side buildup layer 32 is improved. *

(2)本実施形態では、ブリッジ部61のコア裏面13に導体層(裏面側導体層81)が形成されていないため、コア裏面13を覆う樹脂充填材93とブリッジ部61との接触面積が大きくなって両者の密着強度が高くなるとともに、樹脂充填材93と裏面側ビルドアップ層32を構成する層間絶縁層34との密着強度が高くなる。その結果、コア基板11と裏面側ビルドアップ層32とがより確実に密着するようになる。しかも、本実施形態では、ブリッジ部61のコア主面12にも導体層(主面側導体層71)が形成されていないため、コア主面12を覆う樹脂充填材93とブリッジ部61との接触面積が大きくなって両者の密着強度が高くなるとともに、樹脂充填材93と主面側ビルドアップ層31を構成する層間絶縁層33との密着強度が高くなる。その結果、コア基板11と主面側ビルドアップ層31とがより確実に密着するようになる。ゆえに、デラミネーション等の発生を防止することができるため、よりいっそう信頼性に優れた配線基板10を得ることができる。  (2) In this embodiment, since the conductor layer (back side conductor layer 81) is not formed on the core back surface 13 of the bridge portion 61, the contact area between the resin filler 93 covering the core back surface 13 and the bridge portion 61 is small. The adhesion strength between the two increases and the adhesion strength between the resin filler 93 and the interlayer insulating layer 34 constituting the back-side buildup layer 32 increases. As a result, the core substrate 11 and the back surface side buildup layer 32 come into close contact with each other more reliably. In addition, in this embodiment, since the conductor layer (main surface side conductor layer 71) is not formed on the core main surface 12 of the bridge portion 61, the resin filler 93 and the bridge portion 61 that cover the core main surface 12 are provided. The contact area is increased and the adhesion strength between the two is increased, and the adhesion strength between the resin filler 93 and the interlayer insulating layer 33 constituting the main surface side buildup layer 31 is increased. As a result, the core substrate 11 and the main surface side buildup layer 31 come into close contact with each other more reliably. Therefore, the occurrence of delamination and the like can be prevented, so that the wiring board 10 with even higher reliability can be obtained. *

(3)本実施形態では、2つのチップコンデンサ100,101がICチップ搭載領域23に搭載されたICチップ21の直下に配置されている。このため、各チップコンデンサ100,101とICチップ21とをつなぐ配線が短くなり、配線のインダクタンス成分の増加が防止される。従って、各チップコンデンサ100,101によるICチップ21のスイッチングノイズを確実に低減できるとともに、電源電圧の確実な安定化を図ることができる。また、ICチップ21と各チップコンデンサ100,101との間で侵入するノイズを極めて小さく抑えることができるため、誤動作等の不具合を生じることもなく高い信頼性を得ることができる。  (3) In the present embodiment, the two chip capacitors 100 and 101 are disposed immediately below the IC chip 21 mounted in the IC chip mounting region 23. For this reason, the wiring connecting the chip capacitors 100 and 101 and the IC chip 21 is shortened, and an increase in the inductance component of the wiring is prevented. Therefore, the switching noise of the IC chip 21 due to the chip capacitors 100 and 101 can be surely reduced, and the power supply voltage can be reliably stabilized. Further, since noise entering between the IC chip 21 and each of the chip capacitors 100 and 101 can be suppressed to a very low level, high reliability can be obtained without causing problems such as malfunctions. *

なお、上記第1実施形態を以下のように変更してもよい。  In addition, you may change the said 1st Embodiment as follows. *

・上記第1実施形態の収容穴部90,91は平面視略楕円形状の孔であった。しかし、図21のコア基板221に示されるように、収容穴部222,223は、四隅が平面視で曲線形状をなす平面視略正方形状の孔であってもよい。なお、この場合においても、コア裏面224に形成される裏面側導体層225は、貫通孔226の開口端からブリッジ部227に向けて張り出してなる一対の張出部228を有し、両張出部228の先端部が、平面視で曲面形状を有していることがよい。  -The accommodation hole parts 90 and 91 of the said 1st Embodiment were substantially elliptical holes in planar view. However, as shown in the core substrate 221 of FIG. 21, the receiving holes 222 and 223 may be holes having a substantially square shape in plan view in which the four corners have a curved shape in plan view. In this case as well, the back-side conductor layer 225 formed on the core back surface 224 has a pair of overhang portions 228 that protrude from the open end of the through hole 226 toward the bridge portion 227, and both overhangs It is preferable that the tip of the portion 228 has a curved surface shape in plan view. *

・上記第1実施形態の主面側導体層71は、外周部62のコア主面12のみに形成され、ブリッジ部61のコア主面12には形成されていなかった。同様に、上記第1実施形態の裏面側導体層81は、外周部62のコア裏面13のみに形成され、ブリッジ部61のコア裏面13には形成されていなかった。しかし、主面側導体層71は、外周部62のコア主面12に加えて、ブリッジ部61のコア主面12に形成されるものであってもよい。  The main surface side conductor layer 71 of the first embodiment is formed only on the core main surface 12 of the outer peripheral portion 62, and is not formed on the core main surface 12 of the bridge portion 61. Similarly, the back-side conductor layer 81 of the first embodiment is formed only on the core back surface 13 of the outer peripheral portion 62 and is not formed on the core back surface 13 of the bridge portion 61. However, the main surface side conductor layer 71 may be formed on the core main surface 12 of the bridge portion 61 in addition to the core main surface 12 of the outer peripheral portion 62. *

・上記第1実施形態では、2つの収容穴部90,91にそれぞれチップコンデンサ100,101が収容されていたが、コア基板11に3つ以上の収容穴部を設け、各収容穴部にそれぞれチップコンデンサを収容してもよい。  In the first embodiment, the chip capacitors 100 and 101 are accommodated in the two accommodation holes 90 and 91, respectively. However, three or more accommodation holes are provided in the core substrate 11, and each of the accommodation holes is provided. A chip capacitor may be accommodated. *

・上記第1実施形態では、収容穴部90,91に収容される部品として、チップコンデンサ100,101が用いられていた。しかし、図22に示されるように、ビアアレイタイプのセラミックコンデンサ301を収容穴部90,91に収容される部品として用いてもよい。なお、セラミックコンデンサ301は、セラミック誘電体層302を介して電源用内部電極層303とグランド用内部電極層304とが交互に積層配置された構造を有している。また、セラミックコンデンサ301には、コンデンサ主面305(部品主面)及びコンデンサ裏面306(部品裏面)間
を連通するビア導体307,308が形成されている。電源用ビア導体307は、各電源用内部電極層303を貫通しており、それら同士を互いに電気的に接続している。グランド用ビア導体308は、各グランド用内部電極層304を貫通しており、それら同士を互いに電気的に接続している。ビア導体307,308は、全体としてアレイ状に配置されている。そして、コンデンサ主面305上には、主面側電源用電極309と主面側グランド用電極310とが突設されている。主面側電源用電極309は、電源用ビア導体307のコンデンサ主面305側の端部に接続されており、主面側グランド用電極310は、グランド用ビア導体308のコンデンサ主面305側の端部に接続されている。また、コンデンサ裏面306には、裏面側電源用電極311と裏面側グランド用電極312とが突設されている。裏面側電源用電極311は、電源用ビア導体307のコンデンサ裏面306側の端部に接続されており、裏面側グランド用電極312は、グランド用ビア導体308のコンデンサ裏面306側の端部に接続されている。なお、ICチップ、DRAM、SRAM、レジスターなどを、収容穴部90,91に収容される部品として用いてもよい。 
In the first embodiment, the chip capacitors 100 and 101 are used as components accommodated in the accommodation holes 90 and 91. However, as shown in FIG. 22, a via array type ceramic capacitor 301 may be used as a component housed in the housing holes 90 and 91. The ceramic capacitor 301 has a structure in which power supply internal electrode layers 303 and ground internal electrode layers 304 are alternately stacked via ceramic dielectric layers 302. In addition, via conductors 307 and 308 are formed in the ceramic capacitor 301 so as to communicate between the capacitor main surface 305 (component main surface) and the capacitor back surface 306 (component back surface). The power supply via conductor 307 passes through each of the power supply internal electrode layers 303 and electrically connects them to each other. The ground via conductor 308 passes through each ground internal electrode layer 304 and electrically connects them to each other. The via conductors 307 and 308 are arranged in an array as a whole. On the capacitor main surface 305, a main surface side power supply electrode 309 and a main surface side ground electrode 310 are projected. The main surface side power supply electrode 309 is connected to the end of the power supply via conductor 307 on the capacitor main surface 305 side, and the main surface side ground electrode 310 is connected to the ground via conductor 308 on the capacitor main surface 305 side. Connected to the end. Further, on the capacitor back surface 306, a back surface side power supply electrode 311 and a back surface side ground electrode 312 are projected. The back side power supply electrode 311 is connected to the end of the power supply via conductor 307 on the capacitor back side 306 side, and the back side ground electrode 312 is connected to the end of the ground via conductor 308 on the capacitor back side 306 side. Has been. Note that an IC chip, DRAM, SRAM, a register, or the like may be used as a component accommodated in the accommodation holes 90 and 91.

・上記第1実施形態では、収容穴部90,91の内壁面92とチップコンデンサ100,101のコンデンサ側面104との隙間が、樹脂充填材93によって埋められていた。しかし、図23の配線基板320に示されるように、収容穴部321,322の内壁面323とチップコンデンサ324,325(部品)のコンデンサ側面326(部品側面)との隙間を、主面側ビルドアップ層327を構成する層間絶縁層328の一部で埋めるようにしてもよい。即ち、層間絶縁層328は、樹脂充填材としての機能を有していてもよい。  In the first embodiment, the gap between the inner wall surface 92 of the accommodation hole 90, 91 and the capacitor side surface 104 of the chip capacitor 100, 101 is filled with the resin filler 93. However, as shown in the wiring board 320 of FIG. 23, the gap between the inner wall surface 323 of the accommodation hole portions 321 and 322 and the capacitor side surface 326 (component side surface) of the chip capacitors 324 and 325 (component) is formed on the main surface side build. The interlayer insulating layer 328 constituting the up layer 327 may be partly filled. That is, the interlayer insulating layer 328 may have a function as a resin filler. *

・上記第1実施形態では、1つのICチップ21に対して2つのチップコンデンサ100,101が電気的に接続されていた。しかし、主面側ビルドアップ層31に設定されたICチップ搭載領域に2つのICチップを搭載し、各ICチップに2つのチップコンデンサ100,101をそれぞれ電気的に接続してもよい。  In the first embodiment, two chip capacitors 100 and 101 are electrically connected to one IC chip 21. However, two IC chips may be mounted in the IC chip mounting region set in the main surface side buildup layer 31, and the two chip capacitors 100 and 101 may be electrically connected to each IC chip. *

[第2実施形態] 以下、本発明の部品内蔵配線基板を具体化した第2実施形態を図面に基づき詳細に説明する。ここでは、上記第1実施形態と相違する部分を中心に説明する。本実施形態では、コア基板の構造などが上記第1実施形態と異なっている。  Second Embodiment Hereinafter, a second embodiment in which the component-embedded wiring board of the present invention is embodied will be described in detail with reference to the drawings. Here, the description will focus on the parts that differ from the first embodiment. In the present embodiment, the structure of the core substrate is different from that of the first embodiment. *

詳述すると、図24に示されるように、本実施形態の部品内蔵配線基板330(以下「配線基板330」という)が備えるコア基板331は、コア主面332側及びコア裏面333側の両方にて開口する2つの収容穴部334,335を有している。なお、コア基板331は、隣接する収容穴部334,335間に位置するブリッジ部336と、各収容穴部334,335及びブリッジ部336を取り囲む外周部337とを有している。  Specifically, as shown in FIG. 24, the core board 331 provided in the component built-in wiring board 330 (hereinafter referred to as “wiring board 330”) of the present embodiment is provided on both the core main surface 332 side and the core back surface 333 side. It has two receiving hole portions 334 and 335 that are open. The core substrate 331 includes a bridge portion 336 positioned between the adjacent accommodation hole portions 334 and 335, and an outer peripheral portion 337 surrounding each of the accommodation hole portions 334 and 335 and the bridge portion 336. *

さらに、図24~図27に示されるように、外周部337のコア主面332には、銅からなる主面側導体層341が形成され、外周部337のコア裏面333には、銅からなる裏面側導体層351が形成されている。裏面側導体層351は、各収容穴部334,335のコア裏面333側開口を露出させるとともにブリッジ部336のコア裏面333側を露出させる1つの貫通孔352を有している。裏面側導体層351は、外周部337のコア裏面333のみに形成される厚さ35μmのプレーン状導体であり、ブリッジ部336のコア裏面333には形成されないようになっている。また、貫通孔352の開口端は、収容穴部334,335の開口端よりも外周側に位置している。さらに、裏面側導体層351は、貫通孔352の開口端からブリッジ部336に向けて張り出してなる一対の張出部353を備えている。両張出部353は、貫通孔352の開口端において互いに反対側に位置しており、互いに接近する方向に張り出している。そして、両張出部353の先端部は、平面視で曲線状を有している。  Further, as shown in FIGS. 24 to 27, the main surface side conductor layer 341 made of copper is formed on the core main surface 332 of the outer peripheral portion 337, and the core back surface 333 of the outer peripheral portion 337 is made of copper. A back side conductor layer 351 is formed. The back surface side conductor layer 351 has one through hole 352 that exposes the core back surface 333 side opening of each of the receiving hole portions 334 and 335 and exposes the core back surface 333 side of the bridge portion 336. The back-side conductor layer 351 is a 35 μm-thick plain conductor formed only on the core back surface 333 of the outer peripheral portion 337, and is not formed on the core back surface 333 of the bridge portion 336. Further, the opening end of the through hole 352 is positioned on the outer peripheral side with respect to the opening ends of the accommodation hole portions 334 and 335. Further, the back-side conductor layer 351 includes a pair of protruding portions 353 that are extended from the opening end of the through hole 352 toward the bridge portion 336. The two overhang portions 353 are located on opposite sides of the opening end of the through hole 352 and project in a direction approaching each other. And the front-end | tip part of both the overhang | projection parts 353 has curved shape by planar view. *

一方、主面側導体層341は、上述した裏面側導体層351とほぼ同じ構造を有している。即ち、図24,図26,図27,図35に示されるように、主面側導体層341は、各収容穴部334,335のコア主面332側開口を露出させるとともにブリッジ部336のコア主面332側を露出させる1つの貫通孔342を有している。主面側導体層341は、外周部337のコア主面332のみに形成される厚さ35μmのプレーン状導体であり、ブリッジ部336のコア主面332には形成されないようになっている。また、貫通孔342の開口端は、収容穴部334,335の開口端よりも外周側に位置している。さらに、主面側導体層341は、貫通孔342の開口端からブリッジ部336に向けて張り出してなる一対の張出部343を備えている。両張出部343は、貫通孔342の開口端において互いに反対側に位置しており、互いに接近する方向に張り出している。そして、両張出部343の先端部は、平面視で曲線状を有している。  On the other hand, the main surface side conductor layer 341 has substantially the same structure as the back surface side conductor layer 351 described above. That is, as shown in FIGS. 24, 26, 27, and 35, the main surface side conductor layer 341 exposes the core main surface 332 side opening of each of the receiving hole portions 334, 335 and the core of the bridge portion 336. It has one through hole 342 that exposes the main surface 332 side. The main surface side conductor layer 341 is a 35 μm thick plain conductor formed only on the core main surface 332 of the outer peripheral portion 337, and is not formed on the core main surface 332 of the bridge portion 336. Further, the opening end of the through hole 342 is located on the outer peripheral side with respect to the opening ends of the accommodation hole portions 334 and 335. Further, the main surface side conductor layer 341 includes a pair of protruding portions 343 that are extended from the opening end of the through hole 342 toward the bridge portion 336. Both projecting portions 343 are located on opposite sides of the opening end of the through hole 342 and project in a direction approaching each other. And the front-end | tip part of both overhang | projection parts 343 has curved shape by planar view. *

図24~図27に示されるように、ブリッジ部336のコア裏面333には、銅からなる複数(本実施形態では3個)の裏面側島状層241が形成されている。各裏面側島状層241は、長径0.6mm×短径0.1mm×厚さ35μmの平面視楕円形状をなしている。各裏面側島状層241は、隣接する収容穴部334,335の中心C1,C2(図25参照)同士を結ぶ仮想線L1(図25参照)と平行に延びる細長い形状をなすとともに、平面視で曲線状(丸みを有する形状)をなしている。また、各裏面側島状層241は、裏面側導体層351から独立し、かつ裏面側導体層351の表面と同じ高さ(厚さ)に突出している。そして、各裏面側島状層241の先端面は、裏面側ビルドアップ層362(配線積層部)を構成する層間絶縁層364に当接している。さらに、各裏面側島状層241は、仮想線L1と直交する方向において互いに等間隔に配置されている。隣接する裏面側島状層241間の領域、及び、隣接する張出部353と裏面側島状層241との間の領域は、スリット状をなしている。なお、隣接する裏面側島状層241間の隙間S1(図25,図27参照)の大きさの最小値、及び、張出部353(裏面側導体層351)と裏面側島状層241との隙間S2(図25,図27参照)の大きさの最小値は、それぞれ35μmである。
As shown in FIGS. 24 to 27, on the core back surface 333 of the bridge portion 336, a plurality (three in this embodiment) of back-side island layers 241 made of copper are formed. Each back-side island layer 241 has an elliptical shape in plan view with a major axis of 0.6 mm, a minor axis of 0.1 mm, and a thickness of 35 μm. Each back-side island layer 241 has an elongated shape extending in parallel with an imaginary line L1 (see FIG. 25) connecting the centers C1, C2 (see FIG. 25) of the adjacent accommodation holes 334, 335, and in plan view. It has a curved shape (shape with roundness). Each back-side island layer 241 is independent from the back-side conductor layer 351 and protrudes to the same height (thickness) as the surface of the back-side conductor layer 351. And the front end surface of each back surface island-like layer 241 is in contact with the interlayer insulating layer 364 constituting the back surface side buildup layer 362 (wiring laminated portion). Further, the back-side island layers 241 are arranged at equal intervals in the direction orthogonal to the virtual line L1. A region between the adjacent backside island-like layers 241 and a region between the adjacent overhanging portion 353 and the backside island-like layer 241 form a slit shape. Note that the minimum value of the size of the gap S1 (see FIGS. 25 and 27) between the adjacent backside island layers 241 and the overhanging portion 353 (backside conductor layer 351) and the backside island layer 241 The minimum value of the size of the gap S2 (see FIGS. 25 and 27) is 35 μm.

図24,図26,図27,図35に示されるように、ブリッジ部336のコア主面332には、銅からなる複数(本実施形態では3個)の主面側島状層231が形成されている。主面側島状層231は、上述した裏面側島状層241とほぼ同じ構造を有している。即ち、各主面側島状層231は、長径0.6mm×短径0.1mm×厚さ35μmの平面視楕円形状をなしている。各主面側島状層231は、上述した仮想線L1と平行に延びる細長い形状をなすとともに、平面視で曲線状(丸みを有する形状)をなしている。また、各主面側島状層231は、主面側導体層341から独立し、かつ主面側導体層341の表面と同じ高さ(厚さ)に突出している。そして、各主面側島状層231の先端面は、主面側ビルドアップ層361を構成する層間絶縁層363に当接している。さらに、各主面側島状層231は、仮想線L1と直交する方向において互いに等間隔に配置されている。隣接する主面側島状層231間の領域、及び、隣接する張出部343と主面側島状層231との間の領域は、スリット状をなしている。なお、隣接する主面側島状層231間の隙間の大きさの最小値、及び、張出部343(主面側導体層341)と主面側島状層231との隙間の大きさの最小値は、それぞれ35μmである。
As shown in FIGS. 24, 26, 27, and 35, a plurality of (three in this embodiment) main surface side island-like layers 231 made of copper are formed on the core main surface 332 of the bridge portion 336. Has been. The main surface side island layer 231 has substantially the same structure as the above-described back surface island layer 241. That is, each main surface side island-like layer 231 has an elliptical shape in plan view with a major axis of 0.6 mm × minor axis of 0.1 mm × thickness of 35 μm. Each main-surface-side island-like layer 231 has an elongated shape extending in parallel with the imaginary line L1 and has a curved shape (a shape having a roundness) in plan view. Each main surface side island-like layer 231 is independent from the main surface side conductor layer 341 and protrudes to the same height (thickness) as the surface of the main surface side conductor layer 341. The leading end surface of each main surface side island layer 231 is in contact with the interlayer insulating layer 363 constituting the main surface side buildup layer 361. Further, the main surface side island layers 231 are arranged at equal intervals in the direction orthogonal to the virtual line L1. A region between the adjacent main surface side island layers 231 and a region between the adjacent overhanging portion 343 and the main surface side island layers 231 form a slit shape. Note that the minimum value of the size of the gap between adjacent main surface side island layers 231 and the size of the gap between the projecting portion 343 (main surface side conductor layer 341) and the main surface side island layers 231 are as follows. The minimum value is 35 μm for each.

図24,図25に示されるように、収容穴部334の内壁面338とチップコンデンサ370(部品)のコンデンサ側面372(部品側面)との隙間、及び、収容穴部335の内壁面338とチップコンデンサ371(部品)のコンデンサ側面372との隙間には、高分子材料(本実施形態では、熱硬化性樹脂であるエポキシ樹脂)からなる樹脂充填材367が充填されている。さらに、ブリッジ部336のコア主面332(表面)と主面側ビルドアップ層361を構成する層間絶縁層363との隙間、及び、ブリッジ部336のコア裏面333(表面)と裏面側ビルドアップ層362を構成する層間絶縁層364との隙間は、樹脂充填材367の一部で埋められている。換言すると、主面側導体層341と主面側島状層231との隙間、及び、裏面側導体層351と裏面側島状層241との隙間S2が、樹脂充填材367の一部で埋められている。なお、本実施形態では、収容穴部334,335の内壁面338とチップコンデンサ370,371のコンデンサ側面372との隙間の大きさが約1mmに設定されている。そして、樹脂充填材367においてブリッジ部336のコア主面332の上に貼付される部分の厚さ、及び、樹脂充填材367においてブリッジ部336のコア裏面333の上に貼付される部分の厚さは、それぞれ35μmに設定されている。  24 and 25, the gap between the inner wall surface 338 of the accommodation hole 334 and the capacitor side surface 372 (component side surface) of the chip capacitor 370 (component), and the inner wall surface 338 of the accommodation hole 335 and the chip. A gap between the capacitor 371 (component) and the capacitor side surface 372 is filled with a resin filler 367 made of a polymer material (in this embodiment, an epoxy resin which is a thermosetting resin). Further, the gap between the core main surface 332 (front surface) of the bridge portion 336 and the interlayer insulating layer 363 constituting the main surface side buildup layer 361, and the core back surface 333 (front surface) of the bridge portion 336 and the back surface side buildup layer. A gap with the interlayer insulating layer 364 constituting the 362 is filled with a part of the resin filler 367. In other words, the gap between the main surface side conductor layer 341 and the main surface side island layer 231 and the gap S2 between the back surface side conductor layer 351 and the back surface side island layer 241 are filled with a part of the resin filler 367. It has been. In the present embodiment, the size of the gap between the inner wall surface 338 of the receiving hole portions 334 and 335 and the capacitor side surface 372 of the chip capacitors 370 and 371 is set to about 1 mm. Then, the thickness of the portion pasted on the core main surface 332 of the bridge portion 336 in the resin filler 367 and the thickness of the portion pasted on the core back surface 333 of the bridge portion 336 in the resin filler 367. Is set to 35 μm. *

次に、本実施形態の配線基板330の製造方法を説明する。ここでは、コア基板準備工程、導体層形成工程、島状層形成工程、収容工程、充填工程及び配線積層部形成工程などが上記第1実施形態とは異なっている。  Next, the manufacturing method of the wiring board 330 of this embodiment is demonstrated. Here, a core substrate preparation process, a conductor layer forming process, an island-shaped layer forming process, a housing process, a filling process, a wiring laminated portion forming process, and the like are different from the first embodiment. *

詳述すると、コア基板準備工程では、基材391のコア主面332に主面側導体層341及び主面側島状層231となる銅箔392が貼付されるとともに、基材391のコア裏面333に裏面側導体層351及び裏面側島状層241となる銅箔392(金属箔)が貼付された銅張積層板390(図28参照)を準備し、これをコア基板331の中間製品とする。  More specifically, in the core substrate preparation step, the copper foil 392 that becomes the main surface side conductor layer 341 and the main surface side island-like layer 231 is attached to the core main surface 332 of the base material 391, and the core back surface of the base material 391. A copper-clad laminate 390 (see FIG. 28) is prepared by attaching a copper foil 392 (metal foil) to be the back-side conductor layer 351 and the back-side island-like layer 241 to 333, and this is used as an intermediate product of the core substrate 331. To do. *

さらに、収容穴部形成工程後の導体層形成工程では、外周部337のコア主面332に主面側導体層341を形成するとともに、外周部337のコア裏面333に裏面側導体層351を形成する。また、収容穴部形成工程後の島状層形成工程では、ブリッジ部336のコア主面332に複数の主面側島状層231を形成するとともに、ブリッジ部336のコア裏面333に複数の裏面側島状層241を形成する。具体的には、上記第1実施形態のめっき層162,163,164と同じめっき層381,382,383のエッチングを行って、めっき層381~383を例えばサブトラクティブ法によってパターニングする。  Further, in the conductor layer forming step after the accommodation hole forming step, the main surface side conductor layer 341 is formed on the core main surface 332 of the outer peripheral portion 337 and the back surface side conductor layer 351 is formed on the core back surface 333 of the outer peripheral portion 337. To do. Further, in the island layer forming step after the accommodation hole forming step, a plurality of main surface side island layers 231 are formed on the core main surface 332 of the bridge portion 336, and a plurality of back surfaces are formed on the core back surface 333 of the bridge portion 336. A side island layer 241 is formed. Specifically, the same plating layers 381, 382, and 383 as the plating layers 162, 163, and 164 of the first embodiment are etched, and the plating layers 381 to 383 are patterned by, for example, a subtractive method. *

詳述すると、導体層形成工程及び島状層形成工程では、まず、レジスト形成工程を行い、コア主面332側のめっき層383の表面上、及び、コア裏面333側のめっき層383の表面上に対して、それぞれドライフィルムをラミネートする。次に、各ドライフィルムに対して露光及び現像を行うことにより、開口部384と被覆部385とを有するめっきレジスト386を形成する(図29,図30参照)。なお、コア主面332側に形成されためっきレジスト386の開口部384からは、各収容穴部334,335と、ブリッジ部336と、外周部337のコア主面332上に形成されためっき層383の一部とが露出する。また、コア主面332側に形成されためっきレジスト386の被覆部385は、ブリッジ部336のコア主面332上において主面側島状層231となる部位を被覆する。一方、コア裏面333側に形成されためっきレジスト386の開口部384からは、各収容穴部334,335と、ブリッジ部336と、外周部337のコア裏面333上に形成されためっき層383の一部とが露出する。また、コア裏面333側に形成されためっきレジスト386の被覆部385は、ブリッジ部336のコア裏面333上において裏面側島状層241となる部位を被覆する。  More specifically, in the conductor layer forming step and the island layer forming step, first, a resist forming step is performed, on the surface of the plating layer 383 on the core main surface 332 side, and on the surface of the plating layer 383 on the core back surface 333 side. On the other hand, a dry film is laminated respectively. Next, by performing exposure and development on each dry film, a plating resist 386 having an opening 384 and a covering portion 385 is formed (see FIGS. 29 and 30). In addition, from the opening part 384 of the plating resist 386 formed on the core main surface 332 side, the plating layers formed on the core main surface 332 of the respective housing hole parts 334, 335, the bridge part 336, and the outer peripheral part 337. A part of 383 is exposed. Further, the covering portion 385 of the plating resist 386 formed on the core main surface 332 side covers a portion that becomes the main surface side island layer 231 on the core main surface 332 of the bridge portion 336. On the other hand, from the opening 384 of the plating resist 386 formed on the core back surface 333 side, each of the receiving hole portions 334 and 335, the bridge portion 336, and the plating layer 383 formed on the core back surface 333 of the outer peripheral portion 337. Some are exposed. Further, the covering portion 385 of the plating resist 386 formed on the core back surface 333 side covers a portion to be the back surface island layer 241 on the core back surface 333 of the bridge portion 336. *

次に、金属箔除去工程を行い、めっき層381~383における開口部384からの露出部分であって被覆部385の外周側となる部分をエッチングすることにより、銅箔392とめっき層381~383とを部分的に除去する(図31,図32参照)。その後、レジスト除去工程を行い、めっきレジスト386を剥離(除去)する。その結果、コア主面332上に主面側導体層341及び主面側島状層231が形成されるとともに、コア裏面333上に裏面側導体層351及び裏面側島状層241が形成される(図31,図32参照)。このとき、コア主面332側のめっき層383の一部が、スルーホール導体387のコア主面332側の端面を覆う蓋めっき層となり、コア裏面333側のめっき層383の一部が、スルーホール導体387のコア裏面333側の端面を覆う蓋めっき層となる。  Next, a metal foil removing process is performed, and the copper foil 392 and the plating layers 381 to 383 are etched by etching the portions of the plating layers 381 to 383 that are exposed from the openings 384 and are on the outer peripheral side of the covering portion 385. Are partially removed (see FIGS. 31 and 32). Thereafter, a resist removing step is performed, and the plating resist 386 is peeled (removed). As a result, the main surface side conductor layer 341 and the main surface side island layer 231 are formed on the core main surface 332, and the back surface side conductor layer 351 and the back surface side island layer 241 are formed on the core back surface 333. (See FIGS. 31 and 32). At this time, a part of the plating layer 383 on the core main surface 332 side becomes a lid plating layer covering the end surface on the core main surface 332 side of the through-hole conductor 387, and a part of the plating layer 383 on the core back surface 333 side is a through-hole. This is a lid plating layer that covers the end surface of the hole conductor 387 on the core back surface 333 side. *

また、導体層形成工程、島状層形成工程及び部品準備工程後の収容工程では、まず、各収容穴部334,335のコア裏面333側開口を、剥離可能な粘着テープ388でシールする(図33参照)。このとき、外周部337のコア裏面333に形成された裏面側導体層351、及び、ブリッジ部336のコア裏面333に形成された裏面側島状層241には、粘着テープ388の粘着面が密着した状態になる。なお、粘着テープ388は、支持テーブル(図示略)によって支持されている。次に、マウント装置(ヤマハ発動機株式会社製)を用いて、コア主面332とコンデンサ主面373(部品主面)とを同じ側に向け、かつ、コア裏面333とコンデンサ裏面374(部品裏面)とを同じ側に向けた状態で、各収容穴部334,335内にそれぞれチップコンデンサ370,371を収容する(図34,図35参照)。このとき、チップコンデンサ370,371は、コンデンサ裏面374側が粘着テープ388の粘着面に貼り付けられることにより仮固定される。  Further, in the housing step after the conductor layer forming step, the island layer forming step, and the component preparation step, first, the opening on the core back surface 333 side of each housing hole 334, 335 is sealed with a peelable adhesive tape 388 (FIG. 33). At this time, the adhesive surface of the adhesive tape 388 is in close contact with the back-side conductor layer 351 formed on the core back surface 333 of the outer peripheral portion 337 and the back-side island layer 241 formed on the core back surface 333 of the bridge portion 336. It will be in the state. The adhesive tape 388 is supported by a support table (not shown). Next, using a mounting device (manufactured by Yamaha Motor Co., Ltd.), the core main surface 332 and the capacitor main surface 373 (component main surface) are directed to the same side, and the core back surface 333 and the capacitor back surface 374 (component back surface) ) Are directed to the same side, and the chip capacitors 370 and 371 are accommodated in the receiving holes 334 and 335, respectively (see FIGS. 34 and 35). At this time, the chip capacitors 370 and 371 are temporarily fixed by attaching the capacitor back surface 374 side to the adhesive surface of the adhesive tape 388. *

続く充填工程では、収容穴部334の内壁面338とチップコンデンサ370のコンデンサ側面372との隙間、及び、収容穴部335の内壁面338とチップコンデンサ371のコンデンサ側面372との隙間に、ディスペンサ装置(Asymtek社製)を用いて、熱硬化樹脂製の樹脂充填材367(株式会社ナミックス製)を充填する(図25,図36参照)。このとき、主面側導体層341と主面側島状層231との隙間に樹脂充填材367の一部が充填されるとともに、裏面側導体層351と裏面側島状層241との隙間S2(図25,図27参照)に樹脂充填材367の一部が充填されるようになる。なお、各主面側島状層231は、充填工程において主面側導体層341と主面側島状層231との隙間に樹脂充填材367が流れ込む方向に沿って延びているため、樹脂充填材367は、主面側導体層341と主面側島状層231との隙間にスムーズに流れ込む。また、各裏面側島状層241は、充填工程において裏面側導体層351と裏面側島状層241との隙間S2に樹脂充填材367が流れ込む方向に沿って延びているため、樹脂充填材367は、裏面側導体層351と裏面側島状層241との隙間S2にスムーズに流れ込む。  In the subsequent filling step, a dispenser device is provided in the gap between the inner wall surface 338 of the accommodation hole 334 and the capacitor side surface 372 of the chip capacitor 370 and the gap between the inner wall surface 338 of the accommodation hole 335 and the capacitor side surface 372 of the chip capacitor 371. (Asymtek Co., Ltd.) is used to fill a resin filler 367 (manufactured by NAMICS Co., Ltd.) made of thermosetting resin (see FIGS. 25 and 36). At this time, the gap between the main surface side conductor layer 341 and the main surface side island layer 231 is partially filled with the resin filler 367, and the gap S2 between the back surface side conductor layer 351 and the back surface side island layer 241. Part of the resin filler 367 is filled (see FIGS. 25 and 27). Each main surface side island-like layer 231 extends along the direction in which the resin filler 367 flows into the gap between the main surface side conductor layer 341 and the main surface side island-like layer 231 in the filling step. The material 367 smoothly flows into the gap between the main surface side conductor layer 341 and the main surface side island layer 231. Further, each back-side island layer 241 extends along the direction in which the resin filler 367 flows into the gap S2 between the back-side conductor layer 351 and the back-side island layer 241 in the filling step, and thus the resin filler 367. Smoothly flows into the gap S2 between the back-side conductor layer 351 and the back-side island layer 241. *

充填工程後の固定工程では、樹脂充填材367を硬化させることにより、チップコンデンサ370,371を収容穴部334,335内に固定する。そして、固定工程後、粘着テープ388を剥離(除去)する。その後、導体層341,351の表面、島状層231,241の表面、主面側導体層341と主面側島状層231との隙間に充填された樹脂充填材367の表面368、及び、裏面側導体層351と裏面側島状層241との隙間S2に充填された樹脂充填材367の表面369などの粗化を行う。  In the fixing step after the filling step, the chip capacitors 370 and 371 are fixed in the accommodation holes 334 and 335 by curing the resin filler 367. Then, after the fixing step, the adhesive tape 388 is peeled (removed). Thereafter, the surfaces of the conductor layers 341 and 351, the surfaces of the island layers 231 and 241, the surface 368 of the resin filler 367 filled in the gap between the main surface side conductor layer 341 and the main surface side island layer 231, and The surface 369 of the resin filler 367 filled in the gap S2 between the back side conductor layer 351 and the back side island layer 241 is roughened. *

固定工程後の配線積層部形成工程では、まず、主面側導体層341と主面側島状層231との隙間に充填された樹脂充填材367の表面368上及びコンデンサ主面373の上に熱硬化性エポキシ樹脂を被着することにより、層間絶縁層363を形成する(図37参照)。また、裏面側導体層351と裏面側島状層241との隙間S2に充填された樹脂充填材367の表面369上及びコンデンサ裏面374の上に熱硬化性エポキシ樹脂を被着することにより、層間絶縁層364を形成する(図37参照)。その後、層間絶縁層363,364上に層間絶縁層365,366を形成する工程などを行うことにより、コア主面332の上に主面側ビルドアップ層361が形成されるとともに、コア裏面333の上に裏面側ビルドアップ層362が形成され、配線基板330となるべき製品領域を平面方向に沿って縦横に複数配列した多数個取り用配線基板が得られる。さらに、多数個取り用配線基板を分割すると、個々の製品である配線基板330を多数個同時に得ることができる。  In the wiring laminated portion forming step after the fixing step, first, on the surface 368 of the resin filler 367 filled in the gap between the main surface side conductor layer 341 and the main surface side island layer 231 and on the capacitor main surface 373. An interlayer insulating layer 363 is formed by applying a thermosetting epoxy resin (see FIG. 37). Further, by applying a thermosetting epoxy resin on the surface 369 of the resin filler 367 and the capacitor back surface 374 filled in the gap S2 between the back-side conductor layer 351 and the back-side island-like layer 241, the interlayer An insulating layer 364 is formed (see FIG. 37). Thereafter, by performing a process of forming interlayer insulating layers 365 and 366 on the interlayer insulating layers 363 and 364, the main surface side buildup layer 361 is formed on the core main surface 332, and the core back surface 333 is formed. A backside build-up layer 362 is formed thereon, and a multi-piece wiring board is obtained in which a plurality of product regions to be the wiring board 330 are arranged vertically and horizontally along the plane direction. Furthermore, when the multi-piece wiring board is divided, a large number of wiring boards 330 which are individual products can be obtained simultaneously. *

従って、本実施形態によれば、上記第1実施形態の効果に加えて以下の効果を得ることができる。  Therefore, according to the present embodiment, the following effects can be obtained in addition to the effects of the first embodiment. *

(4)例えば、図45~図47に示されるように、コア基板204のコア裏面202全体に裏面側導体層206が形成されていると、裏面側導体層206と粘着テープ210との間に樹脂充填材211が潜り込んでしまい、コア裏面202側に形成される裏面側ビルドアップ層と裏面側導体層206との密着性に問題が生じるおそれがある。そこで、本実施形態の配線基板330では、ブリッジ部336を取り囲むように裏面側導体層351を形成するとともに、ブリッジ部336に、裏面側導体層351から独立した裏面側島状層241を形成している。この場合、収容穴部334,335の内壁面338とチップコンデンサ370,371のコンデンサ側面372との隙間に充填された樹脂充填材367の一部が、隣接する裏面側島状層241間の隙間S1(図25,図27参照)や、裏面側導体層351と裏面側島状層241との隙間S2(図25,図27参照)に流れ込む(逃げ込む)ようになるため、上記した潜り込みが発生しにくくなる。ゆえに、コア基板331と裏面側ビルドアップ層362とが確実に密着するようになるため、信頼性に優れた配線基板330を得ることができる。換言すると、樹脂充填材367の一部が隙間に流れ込む構造となっていれば、ブリッジ部336に配線パターン(島状層)を設置することができるため、配線の自由度が大きくなる。
(4) For example, as shown in FIGS. 45 to 47, when the back side conductor layer 206 is formed on the entire core back side 202 of the core substrate 204, the gap between the back side conductor layer 206 and the adhesive tape 210 is increased. The resin filler 211 may sink and cause a problem in the adhesion between the back-side buildup layer and the back-side conductor layer 206 formed on the core back surface 202 side. Therefore, in the wiring board 330 of this embodiment, the back surface side conductor layer 351 is formed so as to surround the bridge portion 336, and the back surface side island-like layer 241 independent of the back surface side conductor layer 351 is formed in the bridge portion 336. ing. In this case, a part of the resin filler 367 filled in the gap between the inner wall surface 338 of the accommodation hole portions 334 and 335 and the capacitor side surface 372 of the chip capacitors 370 and 371 is a gap between the adjacent backside island layers 241. S1 (see FIGS. 25 and 27) and the gap S2 (see FIGS. 25 and 27) between the back-side conductor layer 351 and the back-side island layer 241 (see FIG. 25 and FIG. 27) flow, so that the above-described sinking occurs. It becomes difficult to do. Therefore, since the core substrate 331 and the back-side buildup layer 362 come into close contact with each other, the wiring substrate 330 with excellent reliability can be obtained. In other words, if a part of the resin filler 367 flows into the gap, a wiring pattern (island layer) can be installed in the bridge portion 336, so that the degree of freedom of wiring increases.

(5)本実施形態の収容工程及び充填工程は、収容穴部334のコア裏面333側開口を粘着テープ388で塞ぎ、外周部337のコア裏面333に形成された裏面側導体層351とブリッジ部336のコア裏面333に形成された裏面側島状層241とに粘着面を密着させた状態で行っている。このため、収容工程では、チップコンデンサ370,371のコンデンサ裏面374側が粘着テープ388の粘着面に貼り付けられて仮固定され、それぞれのチップコンデンサ370,371が備える電極375,376のコンデンサ裏面側端部377,378(図25参照)の表面がコア裏面333に形成された裏面側導体層351の表面と面一になる。しかも、粘着テープ388が裏面側島状層241によって支持された状態となることから、粘着テープ388の撓みが防止されるため、粘着テープ388の粘着面に貼り付けられたチップコンデンサ370,371の位置精度の低下が防止される。よって、コンデンサ裏面374側及び裏面側導体層351の表面に接する裏面側ビルドアップ層362の表面360を平坦にすることができるため、配線基板330の寸法精度が向上する。
(5) In the accommodation step and the filling step of the present embodiment, the opening on the core rear surface 333 side of the accommodation hole 334 is closed with the adhesive tape 388, and the back side conductor layer 351 and the bridge portion formed on the core back surface 333 of the outer peripheral portion 337 This is performed in a state where the adhesive surface is in close contact with the back-side island layer 241 formed on the core back surface 333 of 336. Therefore, in the housing process, the capacitor back surface 374 side of the chip capacitors 370 and 371 is affixed to the adhesive surface of the adhesive tape 388 and temporarily fixed, and the capacitor back surface side ends of the electrodes 375 and 376 included in the respective chip capacitors 370 and 371 are provided. The surfaces of the portions 377 and 378 (see FIG. 25) are flush with the surface of the back-side conductor layer 351 formed on the core back surface 333. In addition, since the adhesive tape 388 is supported by the back-side island layer 241, the adhesive tape 388 is prevented from being bent, and thus the chip capacitors 370 and 371 attached to the adhesive surface of the adhesive tape 388 are prevented. A decrease in position accuracy is prevented. Therefore, the surface 360 of the back-side buildup layer 362 that is in contact with the capacitor back-side 374 side and the surface of the back-side conductor layer 351 can be flattened, so that the dimensional accuracy of the wiring board 330 is improved.

(6)本実施形態では、ブリッジ部336のコア裏面333に配線パターン(裏面側島状層241)が形成されているため、配線パターン(裏面側導体層351、裏面側島状層241)と裏面側ビルドアップ層362を構成する層間絶縁層364との接触面積が確保されて両者の密着強度が高くなる。その結果、コア基板331と裏面側ビルドアップ層362とが確実に密着するようになる。しかも、本実施形態では、ブリッジ部336のコア主面332にも配線パターン(主面側島状層231)が形成されているため、配線パターン(主面側導体層341、主面側島状層231)と主面側ビルドアップ層361を構成する層間絶縁層363との接触面積が確保されて両者の密着強度が高くなる。その結果、コア基板331と主面側ビルドアップ層361とが確実に密着するようになる。ゆえに、デラミネーション等の発生を防止することができるため、よりいっそう信頼性に優れた配線基板330を得ることができる。また、ブリッジ部336の表面(コア主面332及びコア裏面333)に配線パターンを設けた分だけ、ブリッジ部336の表面とビルドアップ層361,362との隙間に流れ込む樹脂充填材367の量を減らすことができるため、配線基板330の製造コストを抑えることができる。  (6) In this embodiment, since the wiring pattern (back surface side island layer 241) is formed on the core back surface 333 of the bridge portion 336, the wiring pattern (back surface side conductor layer 351, back surface side island layer 241) and A contact area with the interlayer insulating layer 364 constituting the back-side buildup layer 362 is ensured, and the adhesion strength between them is increased. As a result, the core substrate 331 and the back surface side build-up layer 362 are surely adhered to each other. Moreover, in this embodiment, since the wiring pattern (main surface side island layer 231) is also formed on the core main surface 332 of the bridge portion 336, the wiring pattern (main surface side conductor layer 341, main surface side island shape) The contact area between the layer 231) and the interlayer insulating layer 363 constituting the main surface side buildup layer 361 is ensured, and the adhesion strength between them is increased. As a result, the core substrate 331 and the main surface side build-up layer 361 come into close contact with each other. Therefore, the occurrence of delamination and the like can be prevented, so that the wiring board 330 with even higher reliability can be obtained. Further, the amount of the resin filler 367 that flows into the gap between the surface of the bridge portion 336 and the build-up layers 361 and 362 is equivalent to the amount of the wiring pattern provided on the surface of the bridge portion 336 (core main surface 332 and core back surface 333). Since it can reduce, the manufacturing cost of the wiring board 330 can be held down. *

なお、上記第2実施形態を以下のように変更してもよい。  In addition, you may change the said 2nd Embodiment as follows. *

・上記第2実施形態の収容穴部334,335は平面視略楕円形状の孔であった。しかし、図38のコア基板291に示されるように、収容穴部292,293は、四隅が平面視で曲線形状をなす平面視略正方形状の孔であってもよい。  -The accommodation hole parts 334 and 335 of the said 2nd Embodiment were holes of a substantially elliptical shape in planar view. However, as shown in the core substrate 291 of FIG. 38, the receiving hole portions 292 and 293 may be holes having a substantially square shape in plan view in which the four corners have a curved shape in plan view. *

・上記第2実施形態の裏面側島状層241は平面視楕円形状をなしていた。しかし、図39,図40のコア基板251,252に示されるように、島状層は、例えば、平面視矩形状の裏面側島状層253であってもよいし、平面視円形状の裏面側島状層254であってもよい。また、図41のコア基板261に示されるように、ブリッジ部262のコア裏面263には、複数種類の島状層(ここでは、平面視矩形状の裏面側島状層264及び平面視十字状の裏面側島状層265)が形成されていてもよい。  In the second embodiment, the back-side island layer 241 has an elliptical shape in plan view. However, as shown in the core substrates 251 and 252 of FIGS. 39 and 40, the island layer may be, for example, a back side island layer 253 having a rectangular shape in plan view, or a back surface having a circular shape in plan view. The side island layer 254 may be used. 41, the core back surface 263 of the bridge portion 262 has a plurality of types of island-like layers (here, the back-side island-like layer 264 having a rectangular shape in plan view and a cross-like shape in plan view). The back-side island-like layer 265) may be formed. *

・図42のコア基板271に示されるように、ブリッジ部272に、コア主面273及びコア裏面274を貫通するスルーホール導体275が形成されていてもよい。この場合、主面側島状層276は、スルーホール導体275のコア主面273側端部に電気的に接続されるパッドとなり、裏面側島状層277は、スルーホール導体275のコア裏面274側端部に電気的に接続されるパッドとなる。このようにすれば、ブリッジ部272に電気回路を形成できるため、配線基板の高機能化を図ることができる。  42, as shown in the core substrate 271 of FIG. 42, a through-hole conductor 275 that penetrates the core main surface 273 and the core back surface 274 may be formed in the bridge portion 272. In this case, the main-surface-side island layer 276 serves as a pad that is electrically connected to the end of the through-hole conductor 275 on the core main surface 273 side, and the back-surface-side island-shaped layer 277 is the core back surface 274 of the through-hole conductor 275. The pad is electrically connected to the side end. In this way, an electrical circuit can be formed in the bridge portion 272, so that the functionality of the wiring board can be enhanced. *

・図43のコア基板281に示されるように、ブリッジ部282のコア裏面283において裏面側島状層284が存在しない非形成領域に、コア裏面283において開口するとともに隣接する収容穴部間を連通する凹部285が設けられていてもよい。このようにすれば、樹脂充填材286が、隣接する裏面側島状層284間の隙間や、裏面側導体層と裏面側島状層284との隙間に加えて、凹部285内にも流れ込む(逃げ込む)ようになるため、上記した潜り込みがよりいっそう発生しにくくなる。  43. As shown in the core substrate 281 of FIG. 43, in the core back surface 283 of the bridge portion 282, the back surface side island-like layer 284 is not formed, and an opening is opened in the core back surface 283 and communication between adjacent accommodation holes is performed. A concave portion 285 may be provided. In this way, the resin filler 286 flows into the recess 285 in addition to the gap between the adjacent backside island layers 284 and the gap between the backside conductor layer and the backside island layer 284 ( Therefore, the above-described diving is more unlikely to occur. *

・上記第2実施形態では、ブリッジ部336のコア裏面333に裏面側島状層241が形成され、ブリッジ部336のコア主面332に主面側島状層231が形成されていた。しかし、主面側島状層231は形成されていなくてもよい(図44参照)。また、この場合、主面側導体層341が、外周部337のコア主面332に加えて、ブリッジ部336のコア主面332に形成されていてもよい。  In the second embodiment, the back-side island layer 241 is formed on the core back surface 333 of the bridge portion 336, and the main surface-side island layer 231 is formed on the core main surface 332 of the bridge portion 336. However, the main surface side island-like layer 231 may not be formed (see FIG. 44). In this case, the main surface side conductor layer 341 may be formed on the core main surface 332 of the bridge portion 336 in addition to the core main surface 332 of the outer peripheral portion 337. *

・上記第2実施形態においても、上記第1実施形態と同様に、2つの収容穴部334,335にそれぞれチップコンデンサ370,371が収容されていたが、この場合においても、コア基板331に3つ以上の収容穴部を設け、各収容穴部にそれぞれチップコンデンサを収容する形態に変更することが可能である(図41参照)。  In the second embodiment, as in the first embodiment, the chip capacitors 370 and 371 are accommodated in the two accommodation holes 334 and 335, respectively. It is possible to change to a form in which one or more accommodation holes are provided and the chip capacitors are accommodated in the respective accommodation holes (see FIG. 41). *

・上記第2実施形態では、収容穴部334,335に収容される部品として、上記第1実施形態と同様のチップコンデンサ370,371が用いられていた。しかし、上記第2実施形態においても、図22に示されるビアアレイタイプのセラミックコンデンサ301を、収容穴部334,335に収容される部品として用いることが可能である。  -In the said 2nd Embodiment, the chip capacitors 370 and 371 similar to the said 1st Embodiment were used as components accommodated in the accommodation holes 334 and 335. FIG. However, also in the second embodiment, the via array type ceramic capacitor 301 shown in FIG. 22 can be used as a component accommodated in the accommodation holes 334 and 335. *

・上記第2実施形態では、上記第1実施形態と同様の構成、即ち、収容穴部334,335の内壁面338とチップコンデンサ370,371のコンデンサ側面372との隙間を、樹脂充填材367によって埋めた構成を有していた。しかし、図44の配線基板400に示されるように、収容穴部401,402の内壁面403とチップコンデンサ404,405(部品)のコンデンサ側面406(部品側面)との隙間を、主面側ビルドアップ層407を構成する層間絶縁層408の一部で埋めるようにしてもよい。即ち、層間絶縁層408は、樹脂充填材としての機能を有していてもよい。  In the second embodiment, the same configuration as in the first embodiment, that is, the gap between the inner wall surface 338 of the receiving hole portions 334 and 335 and the capacitor side surface 372 of the chip capacitors 370 and 371 is formed by the resin filler 367. Had a buried configuration. However, as shown in the wiring board 400 of FIG. 44, the gap between the inner wall surface 403 of the accommodation holes 401 and 402 and the capacitor side surface 406 (component side surface) of the chip capacitors 404 and 405 (component) is formed on the main surface side build. The interlayer insulating layer 408 constituting the up layer 407 may be partly filled. That is, the interlayer insulating layer 408 may have a function as a resin filler. *

・上記第2実施形態では、上記第1実施形態と同様に、1つのICチップ409に対して2つのチップコンデンサ370,371が電気的に接続されていた。しかし、主面側ビルドアップ層361に設定されたICチップ搭載領域410に2つのICチップを搭載し、各ICチップに2つのチップコンデンサ370,371をそれぞれ電気的に接続してもよい。  In the second embodiment, similar to the first embodiment, two chip capacitors 370 and 371 are electrically connected to one IC chip 409. However, two IC chips may be mounted on the IC chip mounting area 410 set in the main surface side buildup layer 361, and the two chip capacitors 370 and 371 may be electrically connected to each IC chip. *

 次に、前述した実施形態によって把握される技術的思想を以下に列挙する。 Next, the technical ideas grasped by the embodiment described above are listed below.

(1)上記手段1において、前記裏面側導体層は、前記外周部の前記コア裏面に形成される一方、前記ブリッジ部の前記コア裏面に形成されないことを特徴とする部品内蔵配線基板。  (1) In the above-mentioned means 1, the back-side conductor layer is formed on the core back surface of the outer peripheral portion, but is not formed on the core back surface of the bridge portion. *

(2)上記手段3において、前記裏面側導体層は、複数の前記収容穴部の前記コア裏面側開口を露出させるとともに前記ブリッジ部の前記コア裏面を露出させる1つの貫通孔を有し、前記貫通孔の開口端から前記ブリッジ部に向けて張り出してなる張出部を備え、前記張出部の先端部は平面視で曲面形状を有していることを特徴とする部品内蔵配線基板の製造方法。  (2) In the above means 3, the back surface side conductor layer has one through hole that exposes the core back surface side opening of the plurality of receiving holes and exposes the core back surface of the bridge portion, Producing a wiring board with a built-in component, comprising a projecting portion that projects from the opening end of a through-hole toward the bridge portion, and the distal end portion of the projecting portion has a curved shape in plan view. Method. *

(3)上記手段3において、前記充填工程後かつ前記配線積層部形成工程前に、前記樹脂充填材を硬化させて前記部品を固定する固定工程を行うことを特徴とする部品内蔵配線基板の製造方法。  (3) Manufacturing of a component built-in wiring board characterized in that, in the above means 3, a fixing step of fixing the component by curing the resin filler is performed after the filling step and before the wiring laminated portion forming step. Method. *

(4)上記手段2において、前記島状層の先端面が前記配線積層部に当接していることを特徴とする部品内蔵配線基板。  (4) The component built-in wiring board according to the above means 2, wherein the tip surface of the island layer is in contact with the wiring laminated portion. *

(5)上記手段4において、前記充填工程後かつ前記配線積層部形成工程前に、前記樹脂充填材を硬化させて前記部品を固定する固定工程を行うことを特徴とする部品内蔵配線基板の製造方法。 (5) Manufacturing of a component built-in wiring board characterized in that, in the above means 4, a fixing step of fixing the component by curing the resin filler is performed after the filling step and before the wiring laminated portion forming step. Method.

10,320,330,400…部品内蔵配線基板(配線基板)

11,221,251,252,261,271,281,291,331…コア基板

12,273,332…コア主面

13,224,263,274,283,333…コア裏面

32,362…配線積層部としての裏面側ビルドアップ層

34,36,364,366…層間絶縁層

42…導体層

61,227,262,272,282,336…ブリッジ部

62,337…外周部

81,225,351…裏面側導体層

82,226…貫通孔

83,228…張出部

90,91,222,223,292,293,321,322,334,335,401,402…収容穴部

92,323,338,403…収容穴部の内壁面

93,286,367…樹脂充填材

95,369…樹脂充填材の表面

100,101,324,325,370,371,404,405…部品としてのチップコンデンサ

102,305,373…部品主面としてのコンデンサ主面

103,306,374…部品裏面としてのコンデンサ裏面

104,326,372,406…部品側面としてのコンデンサ側面

150,390…積層板としての銅張積層板

152,392…金属箔としての銅箔

170,386…めっきレジスト

171,384…開口部

181,388…粘着テープ

241,253,254,264,265,277,284…島状層としての裏面側島状層

275,387…スルーホール導体

285…凹部

301…部品としてのセラミックコンデンサ

328,408…樹脂充填材としての層間絶縁層

385…被覆部

C1,C2…収容穴部の中心

L1…仮想線

S2…裏面側導体層と島状層との隙間

T1…ブリッジ部の厚さ

T3…外周部と裏面側導体層との合計の厚さ
10, 320, 330, 400 .. component built-in wiring board (wiring board)

11,221,251,252,261,271,281,291,331 ... core substrate

12, 273, 332 ... Core main surface

13,224,263,274,283,333 ... back of the core

32, 362 ... Back side build-up layer as a wiring laminate

34, 36, 364, 366 ... interlayer insulating layer

42 ... Conductor layer

61,227,262,272,282,336 ... bridge part

62,337 ... outer periphery

81, 225, 351 ... back side conductor layer

82, 226 ... through hole

83,228 ... overhang

90, 91, 222, 223, 292, 293, 321, 322, 334, 335, 401, 402 ... receiving hole

92, 323, 338, 403 ... inner wall surface of receiving hole

93,286,367 ... Resin filler

95,369 ... surface of resin filler

100, 101, 324, 325, 370, 371, 404, 405 ... chip capacitors as components

102, 305, 373: Capacitor main surface as a component main surface

103, 306, 374 ... Capacitor back surface as component back surface

104, 326, 372, 406 ... Capacitor side face as part side face

150, 390 ... Copper-clad laminate as a laminate

152,392 ... Copper foil as metal foil

170, 386 ... Plating resist

171, 384 ... opening

181,388 ... Adhesive tape

241, 253, 254, 264, 265, 277, 284 ... back side island layer as island layer

275,387 ... through-hole conductor

285 ... recess

301: Ceramic capacitor as a part

328, 408 ... Interlayer insulating layer as a resin filler

385 ... covering portion

C1, C2 ... Center of receiving hole

L1 ... Virtual line

S2: Clearance between the back side conductor layer and the island layer

T1 Thickness of the bridge part

T3: Total thickness of the outer peripheral portion and the back side conductor layer

Claims (16)

コア主面及びコア裏面を有し、前記コア主面側及び前記コア裏面側の両方にて開口する収容穴部を複数有するコア基板と、

 部品主面、部品裏面及び部品側面を有し、前記コア主面と前記部品主面とを同じ側に向けた状態で複数の前記収容穴部にそれぞれ収容された複数の部品と、

 前記コア基板に形成された前記収容穴部の内壁面と前記部品側面との隙間に充填された樹脂充填材と、

 層間絶縁層及び導体層を前記コア裏面上及び前記部品裏面上にて積層した構造を有する配線積層部と

を備える部品内蔵配線基板であって、

 前記コア基板は、隣接する前記収容穴部間に位置するブリッジ部と、複数の前記収容穴部及び前記ブリッジ部を取り囲む裏面側導体層が前記コア裏面に形成された外周部とを有し、

 前記ブリッジ部の厚さが、前記外周部と前記裏面側導体層との合計の厚さよりも薄くなっており、

 前記ブリッジ部の表面と前記配線積層部との隙間が、前記樹脂充填材の一部で埋められている

ことを特徴とする部品内蔵配線基板。  
A core substrate having a core main surface and a core back surface, and having a plurality of receiving holes opened on both the core main surface side and the core back surface side;

A plurality of components each having a component main surface, a component back surface, and a component side surface, each housed in the plurality of housing holes in a state where the core main surface and the component main surface are directed to the same side;

A resin filler filled in a gap between an inner wall surface of the accommodation hole formed in the core substrate and the side surface of the component;

A wiring laminated portion having a structure in which an interlayer insulating layer and a conductor layer are laminated on the core back surface and the component back surface;

A component built-in wiring board comprising:

The core substrate has a bridge portion positioned between the adjacent accommodation hole portions, and an outer peripheral portion in which a plurality of the accommodation hole portions and a back surface side conductor layer surrounding the bridge portion are formed on the core back surface,

The thickness of the bridge portion is thinner than the total thickness of the outer peripheral portion and the back side conductor layer,

A gap between the surface of the bridge portion and the wiring laminated portion is filled with a part of the resin filler.

A wiring board with a built-in component.
前記裏面側導体層は、

 複数の前記収容穴部の前記コア裏面側開口を露出させるとともに前記ブリッジ部の前記コア裏面を露出させる1つの貫通孔を有し、

 前記貫通孔の開口端から前記ブリッジ部に向けて張り出してなる張出部を備え、

 前記張出部の先端部は平面視で曲面形状を有している

ことを特徴とする請求項1に記載の部品内蔵配線基板。  
The back side conductor layer is

And having one through-hole exposing the core back side of the bridge portion and exposing the core back side opening of the plurality of receiving holes,

A projecting portion that projects from the opening end of the through hole toward the bridge portion;

The tip of the overhang has a curved shape in plan view

The component built-in wiring board according to claim 1.
コア主面及びコア裏面を有し、前記コア主面側及び前記コア裏面側の両方にて開口する収容穴部を複数有するコア基板と、

 部品主面、部品裏面及び部品側面を有し、前記コア主面と前記部品主面とを同じ側に向けた状態で複数の前記収容穴部にそれぞれ収容された複数の部品と、

 前記コア基板に形成された前記収容穴部の内壁面と前記部品側面との隙間に充填された樹脂充填材と、

 層間絶縁層及び導体層を前記コア裏面上及び前記部品裏面上にて積層した構造を有する配線積層部と

を備える部品内蔵配線基板であって、

 前記コア基板は、隣接する前記収容穴部間に位置するブリッジ部と、複数の前記収容穴部及び前記ブリッジ部を取り囲む裏面側導体層が前記コア裏面に形成された外周部とを有し、

 前記ブリッジ部の前記コア裏面に、前記裏面側導体層から独立し、かつ裏面側導体層の表面と同じ高さに突出する島状層が形成され、

 前記裏面側導体層と前記島状層との隙間が、前記樹脂充填材の一部で埋められている

ことを特徴とする部品内蔵配線基板。  
A core substrate having a core main surface and a core back surface, and having a plurality of receiving holes opened on both the core main surface side and the core back surface side;

A plurality of components each having a component main surface, a component back surface, and a component side surface, each housed in the plurality of housing holes in a state where the core main surface and the component main surface are directed to the same side;

A resin filler filled in a gap between an inner wall surface of the accommodation hole formed in the core substrate and the side surface of the component;

A wiring laminated portion having a structure in which an interlayer insulating layer and a conductor layer are laminated on the core back surface and the component back surface;

A component built-in wiring board comprising:

The core substrate has a bridge portion positioned between the adjacent accommodation hole portions, and an outer peripheral portion in which a plurality of the accommodation hole portions and a back surface side conductor layer surrounding the bridge portion are formed on the core back surface,

On the back surface of the core of the bridge portion, an island-like layer that is independent from the back surface side conductor layer and protrudes at the same height as the surface of the back surface side conductor layer is formed,

A gap between the back conductor layer and the island layer is filled with a part of the resin filler.

A wiring board with a built-in component.
前記ブリッジ部の前記コア裏面に複数の前記島状層が形成され、隣接する前記島状層間の領域がスリット状をなしていることを特徴とする請求項3に記載の部品内蔵配線基板。   4. The component built-in wiring board according to claim 3, wherein a plurality of the island layers are formed on the back surface of the core of the bridge portion, and a region between the adjacent island layers is formed in a slit shape. * 複数の前記島状層は、隣接する前記収容穴部の中心同士を結ぶ仮想線と直交する方向に配置されていることを特徴とする請求項3または4に記載の部品内蔵配線基板。   5. The component built-in wiring board according to claim 3, wherein the plurality of island-shaped layers are arranged in a direction orthogonal to a virtual line connecting the centers of the adjacent accommodation hole portions. * 複数の前記島状層は、前記仮想線と平行に延びる細長い形状をなしていることを特徴とする請求項5に記載の部品内蔵配線基板。   The component built-in wiring board according to claim 5, wherein the plurality of island layers have an elongated shape extending in parallel with the virtual line. * 前記島状層は、平面視で曲線状をなしていることを特徴とする請求項3乃至6のいずれか1項に記載の部品内蔵配線基板。   The component built-in wiring board according to claim 3, wherein the island layer has a curved shape in plan view. * 前記ブリッジ部に、前記コア主面及び前記コア裏面を貫通するスルーホール導体が形成され、

 前記島状層は、前記スルーホール導体の前記コア裏面側端部に電気的に接続されるパッドである

ことを特徴とする請求項3乃至7のいずれか1項に記載の部品内蔵配線基板。  
In the bridge portion, a through-hole conductor that penetrates the core main surface and the core back surface is formed,

The island layer is a pad that is electrically connected to an end of the through hole conductor on the core back surface side.

The component built-in wiring board according to claim 3, wherein the wiring board has a built-in component.
前記ブリッジ部の前記コア裏面において前記島状層が存在しない非形成領域に、前記コア裏面において開口するとともに隣接する前記収容穴部間を連通する凹部が設けられていることを特徴とする請求項3乃至8のいずれか1項に記載の部品内蔵配線基板。   The concave portion that opens in the back surface of the core and communicates between the adjacent receiving hole portions is provided in a non-formation region where the island layer does not exist on the back surface of the core of the bridge portion. The component built-in wiring board according to any one of 3 to 8. * 請求項1または2に記載の部品内蔵配線基板の製造方法であって、

 前記コア基板を準備するコア基板準備工程と、

 前記コア基板準備工程後、前記収容穴部を複数形成することにより、前記外周部と前記ブリッジ部とを有する前記コア基板を得る収容穴部形成工程と、

 前記収容穴部形成工程後、前記外周部の前記コア裏面に前記裏面側導体層を形成することにより、前記ブリッジ部の厚さを、前記外周部と前記裏面側導体層との合計の厚さよりも薄くする導体層形成工程と、

 前記複数の部品を準備する部品準備工程と、

 前記導体層形成工程及び前記部品準備工程後、複数の前記収容穴部内にそれぞれ前記部品を収容する収容工程と、

 前記収容工程後、前記収容穴部の内壁面と前記部品側面との隙間に樹脂充填材を充填するとともに、前記樹脂充填材の一部で前記ブリッジ部の前記コア裏面を覆う充填工程と、

 前記充填工程後、前記ブリッジ部の前記コア裏面を覆う前記樹脂充填材の表面上及び前記部品裏面上に前記配線積層部を形成する配線積層部形成工程と

を含むことを特徴とする部品内蔵配線基板の製造方法。  
It is a manufacturing method of the component built-in wiring board according to claim 1 or 2,

A core substrate preparation step of preparing the core substrate;

After the core substrate preparation step, by forming a plurality of the receiving hole portions, a receiving hole portion forming step for obtaining the core substrate having the outer peripheral portion and the bridge portion;

By forming the back surface side conductor layer on the core back surface of the outer peripheral portion after the housing hole forming step, the thickness of the bridge portion is more than the total thickness of the outer peripheral portion and the back surface side conductor layer. A conductor layer forming step to reduce the thickness,

A component preparation step of preparing the plurality of components;

After the conductor layer forming step and the component preparation step, a housing step of housing the component in each of the plurality of housing holes,

After the housing step, filling the resin filler into the gap between the inner wall surface of the housing hole and the side of the component, and filling the core back surface of the bridge portion with a part of the resin filler,

After the filling step, a wiring laminated portion forming step of forming the wiring laminated portion on the surface of the resin filler covering the core back surface of the bridge portion and on the component back surface;

The manufacturing method of the component built-in wiring board characterized by including these.
前記コア基板準備工程では、前記コア裏面に前記裏面側導体層となる金属箔が貼付された積層板を準備し、

 前記導体層形成工程では、

 複数の前記収容穴部と前記ブリッジ部の前記コア裏面上の部位とを露出させる1つの開口部を有するめっきレジストを前記金属箔の表面上に形成するレジスト形成工程と、

 前記金属箔における前記開口部からの露出部分をエッチングすることにより、前記金属箔を部分的に除去する金属箔除去工程と、

 前記金属箔除去工程後、前記めっきレジストを除去するレジスト除去工程と

を行うことを特徴とする請求項10に記載の部品内蔵配線基板の製造方法。  
In the core substrate preparation step, prepare a laminated plate in which a metal foil to be the back side conductor layer is pasted on the back side of the core,

In the conductor layer forming step,

A resist forming step of forming a plating resist having a single opening on the surface of the metal foil to expose a plurality of the receiving hole portions and a portion of the bridge portion on the core back surface;

A metal foil removing step of partially removing the metal foil by etching an exposed portion from the opening in the metal foil;

After the metal foil removing step, a resist removing step for removing the plating resist;

The method of manufacturing a component built-in wiring board according to claim 10, wherein:
前記収容工程及び前記充填工程は、複数の前記収容穴部の前記コア裏面側開口を粘着面を有する粘着テープで塞ぎ、前記外周部の前記コア裏面に形成された前記裏面側導体層に前記粘着面を密着させる一方、前記ブリッジ部の前記コア裏面から前記粘着面を離間させた状態で行われ、

 前記充填工程後に前記粘着テープを除去する

ことを特徴とする請求項10または11に記載の部品内蔵配線基板の製造方法。  
In the housing step and the filling step, the core back surface side openings of the plurality of housing holes are closed with an adhesive tape having an adhesive surface, and the adhesive layer is formed on the back surface conductor layer formed on the core back surface of the outer peripheral portion. While closely contacting the surface, the adhesive surface is separated from the back surface of the core of the bridge portion,

The adhesive tape is removed after the filling step

12. The method of manufacturing a component built-in wiring board according to claim 10 or 11, wherein:
請求項3乃至9のいずれか1項に記載の部品内蔵配線基板の製造方法であって、

 前記コア基板を準備するコア基板準備工程と、

 前記コア基板準備工程後、前記収容穴部を複数形成することにより、前記外周部と前記ブリッジ部とを有する前記コア基板を得る収容穴部形成工程と、

 前記収容穴部形成工程後、前記外周部の前記コア裏面に前記裏面側導体層を形成する導体層形成工程と、

 前記収容穴部形成工程後、前記ブリッジ部の前記コア裏面に前記島状層を形成する島状層形成工程と、

 前記複数の部品を準備する部品準備工程と、

 前記導体層形成工程、前記島状層形成工程及び前記部品準備工程の終了後、複数の前記収容穴部内にそれぞれ前記部品を収容する収容工程と、

 前記収容工程後、前記収容穴部の内壁面と前記部品側面との隙間に前記樹脂充填材を充填するとともに、前記裏面側導体層と前記島状層との隙間に前記樹脂充填材の一部を充填する充填工程と、

 前記充填工程後、前記裏面側導体層と前記島状層との隙間に充填された前記樹脂充填材の表面上及び前記部品裏面上に前記配線積層部を形成する配線積層部形成工程と

を含むことを特徴とする部品内蔵配線基板の製造方法。  
A method of manufacturing a component built-in wiring board according to any one of claims 3 to 9,

A core substrate preparation step of preparing the core substrate;

After the core substrate preparation step, by forming a plurality of the receiving hole portions, a receiving hole portion forming step for obtaining the core substrate having the outer peripheral portion and the bridge portion;

After the housing hole forming step, a conductor layer forming step of forming the back side conductor layer on the core back surface of the outer peripheral portion;

After the accommodation hole forming step, an island-shaped layer forming step for forming the island-shaped layer on the back surface of the core of the bridge portion;

A component preparation step of preparing the plurality of components;

After completion of the conductor layer forming step, the island layer forming step, and the component preparation step, the accommodating step of accommodating the component in each of the plurality of accommodating holes,

After the accommodation step, the resin filler is filled in the gap between the inner wall surface of the accommodation hole and the side surface of the component, and a part of the resin filler is filled in the gap between the back-side conductor layer and the island layer. Filling process for filling,

After the filling step, a wiring laminated portion forming step of forming the wiring laminated portion on the surface of the resin filler filled in the gap between the back-side conductor layer and the island-like layer and on the component back surface;

The manufacturing method of the component built-in wiring board characterized by including these.
前記コア基板準備工程では、前記コア裏面に前記裏面側導体層及び前記島状層となる金属箔が貼付された積層板を準備し、

 前記導体層形成工程及び前記島状層形成工程では、

 複数の前記収容穴部及び前記ブリッジ部を露出させる開口部と、前記ブリッジ部の前記コア裏面上において前記島状層となる部位を被覆する被覆部とを有するめっきレジストを、前記金属箔の表面上に形成するレジスト形成工程と、

 前記金属箔における前記開口部からの露出部分であって前記被覆部の外周側となる部分をエッチングすることにより、前記金属箔を部分的に除去する金属箔除去工程と、

 前記金属箔除去工程後、前記めっきレジストを除去するレジスト除去工程と

を行うことを特徴とする請求項13に記載の部品内蔵配線基板の製造方法。  
In the core substrate preparation step, prepare a laminated plate in which a metal foil to be the back side conductor layer and the island layer is attached to the back side of the core,

In the conductor layer forming step and the island layer forming step,

A plating resist having a plurality of opening portions for exposing the receiving hole portions and the bridge portion, and a covering portion for covering a portion to be the island-like layer on the core back surface of the bridge portion, the surface of the metal foil A resist forming step to be formed on the substrate;

A metal foil removing step of partially removing the metal foil by etching a portion which is an exposed portion from the opening in the metal foil and which is an outer peripheral side of the covering portion;

After the metal foil removing step, a resist removing step for removing the plating resist;

The method for manufacturing a component built-in wiring board according to claim 13, wherein:
前記収容工程及び前記充填工程は、複数の前記収容穴部の前記コア裏面側開口を粘着面を有する粘着テープで塞ぎ、前記裏面側導体層と前記島状層とに前記粘着面を密着させた状態で行われ、

 前記充填工程後に前記粘着テープを除去する

ことを特徴とする請求項13または14に記載の部品内蔵配線基板の製造方法。  
In the housing step and the filling step, the core back surface side openings of the housing holes are closed with an adhesive tape having an adhesive surface, and the adhesive surface is brought into close contact with the back surface conductor layer and the island layer. Done in state

The adhesive tape is removed after the filling step

15. The method of manufacturing a component built-in wiring board according to claim 13 or 14.
前記島状層形成工程では、前記ブリッジ部の前記コア裏面に複数の前記島状層が形成され、

 複数の前記島状層は、前記充填工程において前記裏面側導体層と前記島状層との隙間に前記樹脂充填材が流れ込む方向に沿って延びている

ことを特徴とする請求項13乃至15のいずれか1項に記載の部品内蔵配線基板の製造方法。
In the island layer formation step, a plurality of the island layers are formed on the core back surface of the bridge portion,

The plurality of island-like layers extend along a direction in which the resin filler flows into a gap between the back-side conductor layer and the island-like layer in the filling step.

The method for manufacturing a component built-in wiring board according to any one of claims 13 to 15.
PCT/JP2014/005904 2013-12-04 2014-11-26 Wiring board with embedded components and manufacturing method thereof Ceased WO2015083345A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW103141892A TW201536130A (en) 2013-12-04 2014-12-03 Wiring substrate for built-in parts and manufacturing method thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013251448A JP2015109346A (en) 2013-12-04 2013-12-04 Component incorporated wiring board and manufacturing method thereof
JP2013-251448 2013-12-04
JP2014-012845 2014-01-27
JP2014012845A JP2015141953A (en) 2014-01-27 2014-01-27 Component built-in wiring board and method for manufacturing the same

Publications (1)

Publication Number Publication Date
WO2015083345A1 true WO2015083345A1 (en) 2015-06-11

Family

ID=53273130

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/005904 Ceased WO2015083345A1 (en) 2013-12-04 2014-11-26 Wiring board with embedded components and manufacturing method thereof

Country Status (2)

Country Link
TW (1) TW201536130A (en)
WO (1) WO2015083345A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160081194A1 (en) * 2014-09-17 2016-03-17 Shinko Electric Industries Co., Ltd. Wiring Substrate and Semiconductor Device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170330677A1 (en) * 2016-05-11 2017-11-16 Cascade Microtech, Inc. Space transformers, planarization layers for space transformers, methods of fabricating space transformers, and methods of planarizing space transformers
TWI628768B (en) * 2017-01-06 2018-07-01 照敏企業股份有限公司 Passive component with high withstand voltage
IT201900006736A1 (en) 2019-05-10 2020-11-10 Applied Materials Inc PACKAGE MANUFACTURING PROCEDURES
US11862546B2 (en) * 2019-11-27 2024-01-02 Applied Materials, Inc. Package core assembly and fabrication methods
US11257790B2 (en) 2020-03-10 2022-02-22 Applied Materials, Inc. High connectivity device stacking
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
US11676832B2 (en) 2020-07-24 2023-06-13 Applied Materials, Inc. Laser ablation system for package fabrication
US11404318B2 (en) 2020-11-20 2022-08-02 Applied Materials, Inc. Methods of forming through-silicon vias in substrates for advanced packaging
CN119096701A (en) * 2022-04-28 2024-12-06 京瓷株式会社 Wiring substrate and mounting structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244030A (en) * 2007-03-27 2008-10-09 Ngk Spark Plug Co Ltd Wiring board with built-in capacitor
JP2012009602A (en) * 2010-06-24 2012-01-12 Nec Corp Substrate incorporating integrated circuit element and integrated circuit element to be incorporated therein

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244030A (en) * 2007-03-27 2008-10-09 Ngk Spark Plug Co Ltd Wiring board with built-in capacitor
JP2012009602A (en) * 2010-06-24 2012-01-12 Nec Corp Substrate incorporating integrated circuit element and integrated circuit element to be incorporated therein

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160081194A1 (en) * 2014-09-17 2016-03-17 Shinko Electric Industries Co., Ltd. Wiring Substrate and Semiconductor Device
US9961785B2 (en) * 2014-09-17 2018-05-01 Shinko Electric Co., Ltd. Wiring substrate and semiconductor device

Also Published As

Publication number Publication date
TW201536130A (en) 2015-09-16

Similar Documents

Publication Publication Date Title
JP4838068B2 (en) Wiring board
TWI407870B (en) Wiring substrate manufacturing method
JP4509972B2 (en) Wiring board, embedded ceramic chip
WO2015083345A1 (en) Wiring board with embedded components and manufacturing method thereof
JP5306789B2 (en) Multilayer wiring board and manufacturing method thereof
JP2013074178A (en) Method for manufacturing wiring board with built-in component
KR20100125341A (en) Component Built-in Wiring Board
JP4954765B2 (en) Wiring board manufacturing method
JP5179856B2 (en) Wiring board built-in component and manufacturing method thereof, wiring board
JP2015095587A (en) Multilayer wiring board
JP5078759B2 (en) Wiring board built-in electronic components and wiring board
JP4964481B2 (en) Wiring board
JP2007318089A (en) Wiring board
JP2012151154A (en) Method for manufacturing component built-in wiring substrate
JP5192865B2 (en) Manufacturing method of wiring board with built-in components
JP4405477B2 (en) WIRING BOARD AND METHOD FOR MANUFACTURING THE SAME
JP5202878B2 (en) Wiring board
JP2015109346A (en) Component incorporated wiring board and manufacturing method thereof
JP2015141953A (en) Component built-in wiring board and method for manufacturing the same
JP5172410B2 (en) Manufacturing method of wiring board with built-in components
JP2013197136A (en) Component built-in wiring board manufacturing method
JP4814129B2 (en) Wiring board with built-in components, Wiring board built-in components
JP2009147177A (en) Wiring board built-in capacitor and wiring board
JP2008211202A (en) Wiring board, semiconductor package
JP2008244029A (en) Wiring board with built-in components, parts for wiring board

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14866833

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14866833

Country of ref document: EP

Kind code of ref document: A1