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WO2014208365A3 - エッチング方法及び記録媒体 - Google Patents

エッチング方法及び記録媒体 Download PDF

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Publication number
WO2014208365A3
WO2014208365A3 PCT/JP2014/065736 JP2014065736W WO2014208365A3 WO 2014208365 A3 WO2014208365 A3 WO 2014208365A3 JP 2014065736 W JP2014065736 W JP 2014065736W WO 2014208365 A3 WO2014208365 A3 WO 2014208365A3
Authority
WO
WIPO (PCT)
Prior art keywords
oxide film
silicon oxide
etching method
gas
recording medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2014/065736
Other languages
English (en)
French (fr)
Other versions
WO2014208365A2 (ja
Inventor
戸澤　茂樹
智明 荻原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020157035913A priority Critical patent/KR101725711B1/ko
Priority to US14/900,877 priority patent/US9466507B2/en
Publication of WO2014208365A2 publication Critical patent/WO2014208365A2/ja
Publication of WO2014208365A3 publication Critical patent/WO2014208365A3/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P50/283—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

　エッチング方法は、シリコン酸化膜の表面に混合ガスを供給し、前記シリコン酸化膜を変質させて反応生成物を生成させる変質工程と、前記反応生成物を加熱して除去する加熱工程とを有する。前記変質工程は、前記シリコン酸化膜の表面に、ハロゲン元素を含むガスと塩基性ガスとを含有した混合ガスを供給する第１の変質工程と、前記塩基性ガスの供給を停止し、前記シリコン酸化膜の表面にハロゲン元素を含むガスを含有した混合ガスを供給する第２の変質工程とを有する。
PCT/JP2014/065736 2013-06-25 2014-06-13 エッチング方法及び記録媒体 Ceased WO2014208365A2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020157035913A KR101725711B1 (ko) 2013-06-25 2014-06-13 에칭 방법 및 기록 매체
US14/900,877 US9466507B2 (en) 2013-06-25 2014-06-13 Etching method, and recording medium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-132530 2013-06-25
JP2013132530A JP6161972B2 (ja) 2013-06-25 2013-06-25 エッチング方法及び記録媒体

Publications (2)

Publication Number Publication Date
WO2014208365A2 WO2014208365A2 (ja) 2014-12-31
WO2014208365A3 true WO2014208365A3 (ja) 2015-03-05

Family

ID=52142786

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/065736 Ceased WO2014208365A2 (ja) 2013-06-25 2014-06-13 エッチング方法及び記録媒体

Country Status (5)

Country Link
US (1) US9466507B2 (ja)
JP (1) JP6161972B2 (ja)
KR (1) KR101725711B1 (ja)
TW (1) TWI620245B (ja)
WO (1) WO2014208365A2 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017136306A1 (en) * 2016-02-01 2017-08-10 Tokyo Electron Limited System and method of determining process completion of post heat treatment of a dry etch process
JP6692202B2 (ja) * 2016-04-08 2020-05-13 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6812284B2 (ja) * 2017-03-28 2021-01-13 東京エレクトロン株式会社 エッチング方法及び記録媒体
JP7113681B2 (ja) * 2018-06-28 2022-08-05 株式会社日立ハイテク エッチング処理方法およびエッチング処理装置
GB202117751D0 (en) * 2019-11-14 2022-01-26 Memsstar Ltd Method of manufacturing a microstructure
JP7398493B2 (ja) * 2022-03-18 2023-12-14 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、および基板処理装置
JP2025004598A (ja) * 2023-06-26 2025-01-15 東京エレクトロン株式会社 酸化膜のエッチング方法及び基板処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010245512A (ja) * 2009-03-19 2010-10-28 Tokyo Electron Ltd 基板のエッチング方法及びシステム
WO2012063901A1 (ja) * 2010-11-11 2012-05-18 東京エレクトロン株式会社 半導体装置の製造方法および製造装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000046774A (ko) * 1998-12-31 2000-07-25 메리 이. 보울러 내화학성이 향상된 아크릴계 마블칩의 제조방법
JP4890025B2 (ja) 2005-12-28 2012-03-07 東京エレクトロン株式会社 エッチング方法及び記録媒体
JP4913485B2 (ja) 2006-06-29 2012-04-11 東京エレクトロン株式会社 エッチング方法及び記録媒体
JP2009094307A (ja) 2007-10-10 2009-04-30 Tokyo Electron Ltd エッチング方法及び記録媒体
JP5544343B2 (ja) * 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010245512A (ja) * 2009-03-19 2010-10-28 Tokyo Electron Ltd 基板のエッチング方法及びシステム
WO2012063901A1 (ja) * 2010-11-11 2012-05-18 東京エレクトロン株式会社 半導体装置の製造方法および製造装置

Also Published As

Publication number Publication date
JP6161972B2 (ja) 2017-07-12
WO2014208365A2 (ja) 2014-12-31
US20160163562A1 (en) 2016-06-09
KR101725711B1 (ko) 2017-04-10
US9466507B2 (en) 2016-10-11
TW201517161A (zh) 2015-05-01
TWI620245B (zh) 2018-04-01
JP2015008199A (ja) 2015-01-15
KR20160022826A (ko) 2016-03-02

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