WO2014171277A1 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- WO2014171277A1 WO2014171277A1 PCT/JP2014/058530 JP2014058530W WO2014171277A1 WO 2014171277 A1 WO2014171277 A1 WO 2014171277A1 JP 2014058530 W JP2014058530 W JP 2014058530W WO 2014171277 A1 WO2014171277 A1 WO 2014171277A1
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- light
- light emitting
- translucent member
- emitting element
- emitting device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
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- H10W90/00—
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- H10W90/724—
Definitions
- the present invention relates to a light emitting device including a light transmitting member capable of transmitting light from a light emitting element.
- semiconductor light-emitting elements have been used not only as light sources for illumination instead of fluorescent lamps, but also as light sources having good directivity and high brightness such as projectors such as vehicle headlights and floodlights.
- a light emitting device used for such a purpose is proposed in, for example, Japanese Patent Application Laid-Open No. 2010-272847.
- this light-emitting device covers the light-emitting element, and the outer peripheral side surface of the translucent member to be bonded is an inclined surface that extends toward the lower surface, and the light-emitting device is bonded to the light-emitting element among the lower surfaces. A portion not formed and the inclined surface are covered with a light-reflective resin.
- the present invention has been made in view of the above problems, and an object of the present invention is to provide a light-emitting device that achieves further miniaturization and has less color unevenness.
- the light emitting device of the present invention includes a light emitting element having an upper surface as a light extraction surface, A translucent member having an upper surface and a lower surface and covering a light extraction surface of the light emitting element, The translucent member contains a phosphor, The upper surface and the lower surface of the translucent member are respectively flat surfaces and parallel to each other, A side surface of the translucent member has a convex portion that contacts the lower surface and protrudes laterally.
- the light emitting device of the present invention can achieve further miniaturization.
- a light-emitting device with uniform front luminance and less color unevenness can be provided.
- FIG. 1B is a cross-sectional view taken along line A-A ′ of FIG. 1A. It is a schematic plan view which shows the translucent member used for the light-emitting device of Embodiment 1 of this invention.
- FIG. 2B is a cross-sectional view taken along line A-A ′ of FIG. 2A. It is a graph which shows the cross-sectional data of the brightness
- FIG. 4C is a sectional view taken along line C-C ′ of FIG. 4A.
- the light emitting device 10 has a light emitting element 1 having an upper surface as a light extraction surface, and an upper surface and a lower surface, and covers the light extraction surface of the light emitting element 1.
- the light emitting element 1 is usually a light emitting diode.
- the light emitting element can be appropriately selected according to the purpose, such as its composition, emission color or wavelength, size, number, and the like.
- semiconductor layers such as ZnSe, nitride-based semiconductors (In X Al Y Ga 1-XY N, 0 ⁇ X, 0 ⁇ Y, X + Y ⁇ 1), and GaP are used.
- Examples of the red light emitting element include those using a semiconductor layer such as GaAlAs and AlInGaP.
- the light-emitting element is usually formed by stacking a semiconductor layer on a light-transmitting growth substrate (for example, a sapphire substrate).
- the substrate becomes the upper surface side of the light emitting element and becomes the light extraction surface.
- the substrate may have irregularities on the bonding surface with the semiconductor layer. This makes it possible to intentionally change the critical angle when the light emitted from the semiconductor layer hits the substrate and to easily extract the light to the outside of the substrate.
- the growth substrate may be removed after the semiconductor layers are stacked. The removal can be performed by, for example, polishing, LLO (Laser Lift Off), or the like. When the growth substrate is removed, the semiconductor layer closest to the substrate becomes the upper surface side and becomes the light extraction surface.
- the light emitting element preferably has a pair of positive and negative electrodes on the same surface side. Accordingly, the light emitting element can be flip-chip mounted on the mounting substrate.
- the surface facing the surface on which the pair of electrodes is formed is the light extraction surface.
- One or a plurality of light emitting elements may be included in one light emitting device.
- one or a plurality of light emitting elements may be covered with one light transmissive member.
- the translucent member is a member that covers the light extraction surface of the light emitting element, transmits light emitted from the light emitting element, and emits the light to the outside.
- the translucent member contains a phosphor.
- the translucent member has an upper surface and a lower surface. The lower surface covers the light extraction surface of the light emitting element, and the upper surface is a surface that emits light from the light emitting element.
- a translucent member usually, in order to extract all the light emitted from the light emitting element, it is necessary to cover the entire light extraction surface of the light emitting element with a translucent member. On the other hand, it has been confirmed that the brightness of the light extracted from the light-transmitting member decreases as the translucent member becomes larger than the light extraction surface.
- the lower surface of the translucent member that covers the light-emitting element is equal to or larger than the light extraction surface of the light-emitting element, but is preferably as large as the light extraction surface as much as possible. That is, it is preferable that the edge of the upper surface of the translucent member coincides with the outer edge of the light emitting element in plan view. As a result, the light emitting device can be further reduced in size, and higher luminance can be obtained.
- the edge of the upper surface of the translucent member coincides with the outer edge of the plurality of light emitting element groups arranged on the substrate in plan view.
- the upper and lower surfaces of the translucent member are preferably flat surfaces and are preferably parallel to each other.
- “parallel” includes that one of the upper and lower surfaces is allowed to be inclined by about ⁇ 5 ° with respect to the other. With such a shape, a light-emitting device with uniform front luminance and less color unevenness can be obtained on the upper surface of the translucent member serving as the light-emitting surface.
- the thickness of the translucent member is not particularly limited, and can be, for example, about 50 to 300 ⁇ m.
- the translucent member 2 has, on the side surface 2c, a convex portion 3 that contacts the lower surface 2b and protrudes laterally.
- being in contact with the lower surface 2 b means that a part of the surface constituting the lower surface 2 b of the translucent member 2 becomes a part of the surface constituting the convex portion 3.
- the surface extending from the lower surface 2b of the translucent member 2 is a part of the surface constituting the convex portion 3 so as to form the same plane as the lower surface 2b of the translucent member 2. .
- the convex portion 3 of the translucent member 2 includes, in addition to the lower surface 2b of the translucent member 2, a vertical surface 3a in contact with the lower surface 2b, and in contact with the vertical surface 3a and parallel to the upper surface 2a of the translucent member 2. 3b.
- the convex portion 3 preferably further has a surface 3b parallel to the upper surface 2a of the translucent member 2 and a second vertical surface 3c in contact with the upper surface 2a.
- connects the vertical surface 3a and the 2nd vertical surface 3c is the lower surface of the translucent member 2, or the light of a light emitting element. It is preferable that the surface be parallel to the take-out surface.
- the vertical surface 3a, the second vertical surface 3c, and the parallel surface 3b on the side surface 2c of the translucent member 2 are preferably flat surfaces that are not uneven and are not inclined or curved. Thereby, the thickness of the light reflection member arrange
- the length L (see FIG. 2B) of the protruding portion 3 protruding sideways is about 10 to 300 ⁇ m.
- the upper surface of the light-emitting element is entirely covered with the lower surface of the light-transmitting member, even if a slight positional shift occurs when the light-emitting element is covered with the light-transmitting member, as will be described later. Can do.
- this length is too large, the proportion of the light emitting element disposed other than the top surface increases, which may cause color unevenness.
- the height H (see FIG. 2B) of the convex portion from the lower surface 2b of the translucent member 2 is preferably about 25% of the thickness of the translucent member, for example.
- the thickness is larger, the amount of the light reflecting member disposed above the convex portion is reduced, which causes color unevenness. Further, as the thickness is smaller, chipping or the like is likely to occur, and light from the light emitting element is less likely to propagate to the upper surface.
- the translucent member has a convex portion
- an area capable of receiving all of the light emitted from the light emitting element can be secured on the lower surface side.
- the received light can be emitted with a plane area equivalent to that of the light emitting element.
- the luminance can be improved.
- good parting means that the boundary between the light emitting part and the non-light emitting part is clear, and it can be said that the steeper is improved as the brightness difference between the light emitting part and the non-light emitting part becomes steeper.
- the area of the lower surface of the translucent member is larger than the area of the upper surface of the light emitting element.
- the adhesive absorbs or scatters the light from the light emitting element, the adhesive efficiently reflects the light from the light emitting element by a light reflecting member described later. Therefore, it is preferable not to use a bonding member such as an adhesive other than the bonding surface.
- the area means the flat area thereof. It means the area within the outer edge.
- the ratio of the area of the lower surface of the translucent member to the area of the upper surface of the light emitting element is, for example, preferably about 10: 8 to 10, more preferably about 10: 9 to 10, and about 10: 9.5. Is more preferable.
- the area of the upper surface of the translucent member is preferably equal to the area of the upper surface of the light emitting element.
- “equivalent” means that a difference of about ⁇ 10% is allowed.
- the material of the translucent member is not particularly limited as long as it contains a phosphor, and examples thereof include a resin, glass, and an inorganic substance. Moreover, what was cut out from fluorescent substance ingots, such as a fluorescent substance single crystal, a polycrystalline substance, or the sintered body of fluorescent substance powder, what mixed and sintered fluorescent substance powder in resin, glass, an inorganic substance, etc. Good. Since the higher the transparency, the easier it is to reflect light at the interface with the light reflecting member described later, the luminance can be improved.
- concentration of the phosphor is preferably about 5 to 50%, for example.
- the translucent member is joined so as to cover the light extraction surface of the light emitting element.
- Joining can be performed by, for example, pressure bonding, sintering, adhesion with a known adhesive such as epoxy or silicone, adhesion with a high refractive index organic adhesive, adhesion with low-melting glass, and the like.
- a known adhesive such as epoxy or silicone
- adhesion with a high refractive index organic adhesive adhesion with low-melting glass, and the like.
- a red phosphor is contained in an adhesive that joins the blue light emitting element and the translucent member, thereby A light emitting device that emits light of a light bulb color can be obtained.
- the convex portion of the translucent member can be formed in the shape described above by appropriately selecting the edge angle and the blade width of the dicing blade when the translucent member is diced into individual pieces. It can also be formed by half dicing as a dicing method.
- the light emitting device may include a light reflecting member 6 that surrounds the light emitting element 1 and / or the translucent member 2.
- the light reflective member 6 preferably surrounds both the light emitting element 1 and the light transmissive member 2.
- the upper surface 2 a of the light transmissive member 2 is not covered with the light reflective member 6, and is light reflective with the upper surface 2 a of the light transmissive member 2. It is preferable that the member 6 is flush with or protrudes from the upper surface of the light reflective member 6.
- the light emitted from the upper surface of the translucent member serving as the light emitting surface has a spread in the lateral direction.
- the upper surface of the light reflective member protrudes from the upper surface of the light transmissive member (that is, higher than the height of the upper surface of the light transmissive member)
- the light emitted from the upper surface of the light transmissive member is light reflected.
- the light hits the sex member and is reflected, resulting in variations in light distribution. Therefore, by covering the side surface of the translucent member with the light reflecting member and reducing the height of the light reflecting member that covers the outer periphery of the side surface, the emitted light can be directly extracted to the outside.
- the translucent member when the translucent member is peeled off, the distribution amount of the phosphor positioned between the light emitting element and the light emitting surface may change, and color shift may occur.
- the translucent member when the translucent member is surrounded by the light-reflective member and thereby the translucent member is locked, the translucent member does not peel or shift, and color misalignment or the like occurs. There is no fear.
- the light reflecting member is formed of a material that can reflect light emitted from the light emitting element. Accordingly, light emitted from the light emitting element is reflected in the light transmitting member or the light emitting element at the interface between the light transmitting member or the light emitting element and the light reflecting member. As a result, light propagates in the translucent member or the light emitting element, and finally is emitted from the upper surface of the translucent member to the outside.
- the light reflective member can be formed using a reflective material and a resin or a hybrid resin containing one or more of a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, and an acrylic resin.
- a silicone resin e.g., polymethyl methacrylate
- a modified silicone resin e.g., polymethyl methacrylate
- an epoxy resin e.g., polymethyl methacrylate
- the light reflective member may be made of a material having heat dissipation in addition to reflectivity. Examples of such a material include aluminum nitride and boron nitride having high thermal conductivity.
- the heat conductivity of the light reflective member is preferably 1 W / m ⁇ K or more. More preferably, it is 3 W / m ⁇ K or more.
- the phosphor contained in the translucent member may cause self-heating due to Stokes loss, and this heat may reduce the light conversion efficiency.
- the heat conductivity of the light reflective member high, it is possible to efficiently dissipate the heat of the phosphor in the light transmissive member.
- the amount of light reflection and transmission can be varied depending on the content and / or thickness of the reflective substance. Therefore, it can be adjusted as appropriate depending on the characteristics of the light emitting device to be obtained.
- the content of the reflective material is 30 wt% or more and the thickness thereof is 20 ⁇ m or more.
- the light reflecting member can be molded by, for example, injection molding, potting molding, resin printing method, transfer molding method, compression molding or the like.
- the light emitting device of the present invention may be equipped with a protective element such as a Zener diode.
- a protective element such as a Zener diode.
- the light emitting element 1 is usually placed on the substrate 4.
- the material of the substrate include an insulating member such as glass epoxy, resin, and ceramic, a metal member on which the insulating member is formed, and the like. Among these, those using ceramics having high heat resistance and high weather resistance are preferable. Examples of the ceramic material include alumina, aluminum nitride, and mullite. You may combine insulating materials, such as BT resin, glass epoxy, an epoxy resin, for example with these ceramic materials.
- the substrate 4 one having a wiring 5 connected to the light emitting element 1 on its surface is usually used.
- Such a substrate is known in the art, and any substrate used for mounting a light emitting element or the like can be used.
- the light-emitting device 10 shown in FIGS. 1A and 1B was manufactured, and the luminance distribution was measured.
- four light emitting elements 1 are placed in series on a substrate 4.
- the substrate is obtained by pattern-depositing titanium, palladium, and gold in this order on the surface of an aluminum nitride plate having a thermal conductivity of about 170 W / m ⁇ K, and is further plated with gold.
- the light emitting element is flip-chip mounted by a bump made of gold.
- the light-emitting element 1 is a plate-like translucent member 2 formed by mixing and sintering YAG and alumina (containing 5 to 10 wt% of YAG phosphor, size: 1.55 mm ⁇ 5.9 mm ⁇ 0). .20 (thickness)). This coating is performed by thermosetting an adhesive made of silicone resin.
- the length L of the convex portion 3 of the translucent member 2 was 0.125 mm, and the height H was 0.05 mm.
- the side surfaces of the light emitting element 1 and the translucent member 2 are surrounded by the light reflective member 6 by potting molding.
- the light reflective member 6 contains 30 wt% of titanium oxide in a silicone resin and has a thermal conductivity of about 1 W / m ⁇ K.
- the light reflective member 6 is substantially flush with the upper surface 2a of the translucent member 2, and the thickness of the side surfaces of the translucent member 2 and the light emitting element 1 is about 1.2 mm.
- the translucent member 12 shown in FIGS. 4A and 4B For comparison, a similar light emitting device was manufactured using the translucent member 12 shown in FIGS. 4A and 4B, and the luminance distribution was measured.
- this translucent member 12 the size and thickness of the upper surface and the lower surface and the material are the same as those of the above-described translucent member 2, but the side surface has an inclined surface inclined at 45 ° on the upper surface side, and the lower surface On the side, it protrudes from the top surface by a length L ′ (0.125 mm) and has a vertical surface having a height H ′ (0.075 mm).
- Luminance distribution measurements were relatively compared using ProMetric (PM-1423F-1).
- the luminance distribution of each front surface of the light emitting device using the translucent members 2 and 12 was measured, and cross-sectional data (FIGS. 3A and 3B) was created from the luminance distribution of the front surface.
- FIGS. 3A and 3B in the light emitting device of the present embodiment in which the translucent member has a convex portion, the luminance difference between the light emitting portion and the non-light emitting portion becomes steeper, and the light emitting device has good parting performance. Can be provided.
- the leakage of light from other than the light emitting part for example, when the light emitting device is incorporated into a headlamp or the like, illuminates unnecessary portions and may cause glare light.
- the front luminance as the light emitting device, it is important that the boundary between the light emitting part and the non-light emitting part is clear (the parting ability is good).
- the light-emitting device of the present invention can be used for various light sources such as illumination light sources, various indicator light sources, in-vehicle light sources, display light sources, liquid crystal backlight light sources, traffic lights, in-vehicle components, signboard channel letters, and the like. it can.
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Abstract
Description
上面及び下面を有し、前記発光素子の光取り出し面を被覆する透光性部材と、を備える発光装置であって、
前記透光性部材は蛍光体を含有し、
前記透光性部材の上面及び下面は、それぞれ平坦面で、互いに平行であり、
前記透光性部材の側面は、前記下面に接し、側方に突出する凸部を有することを特徴とする。
発光素子1は、通常、発光ダイオードが用いられる。
発光素子は、その組成、発光色又は波長、大きさ、個数等、目的に応じて適宜選択することができる。例えば、青色、緑色の発光素子としては、ZnSe、窒化物系半導体(InXAlYGa1-X-YN、0≦X、0≦Y、X+Y≦1)、GaPなどの半導体層を用いたもの、赤色の発光素子としては、GaAlAs、AlInGaPなどの半導体層を用いたものが挙げられる。
発光素子では、成長用基板は半導体層の積層後に除去されていてもよい。除去は、例えば、研磨、LLO(Laser Lift Off)等で行うことができる。成長用基板が除去された場合は、基板に最も近かった半導体層が上面側となり、光取り出し面となる。
透光性部材は、発光素子の光取り出し面を被覆し、発光素子から出射される光を透過させ、外部に放出することが可能な部材である。また、透光性部材は、蛍光体を含有している。
透光性部材は、上面及び下面を有している。下面は、発光素子の光取り出し面を被覆し、上面は、発光素子からの光を出射する面となる。通常、発光素子から出射された光の全てを取り出すためには発光素子の光取り出し面の全部を透光性部材で被覆することが必要である。一方、透光性部材が光取り出し面よりも大きくなるほど、そこから取り出される光は、輝度が低下することが確認されている。従って、発光素子を被覆する透光性部材の下面は、発光素子の光取り出し面と同等の大きさ以上であるが、できる限り光取り出し面と同等の大きさであることが好ましい。つまり、透光性部材の上面の縁は、平面視、発光素子の外縁と一致することが好ましい。これにより、発光装置のより一層の小型化が可能となることに加え、より一層高い輝度が得られる。
複数の発光素子が1つの透光性部材によって被覆されている場合は、複数の発光素子の光取り出し面の全部を透光性部材で被覆することが必要である。また、この際、透光性部材の上面の縁は平面視、基板上に配置された複数の発光素子群の外縁と一致することが好ましい。
透光性部材の厚みは、特に限定されるものではなく、例えば、50~300μm程度とすることができる。
あるいは、透光性部材2の上面が凹凸形状、曲面、レンズ状の場合には、鉛直面3aと第2の鉛直面3cとの接する面は、透光性部材2の下面又は発光素子の光取り出し面に平行な面とすることが好ましい。
透光性部材2の下面2bからの凸部の高さH(図2B参照)は、例えば、透光性部材の厚みの25%程度が好ましい。厚みが大きいほど、凸部上方に配置される光反射部材の量が少なくなり、色むらの原因となる。また厚みが小さいほど、欠けなどが生じやすく、また発光素子からの光が上面に伝播されにくくなる。
透光性部材の光取り出し面側において、発光部周囲に漏れ出す光を低減できるため、見切り性の良い発光装置を提供することが可能となる。ここで、見切り性が良いとは、発光部と非発光部との境界が明確なことを意味し、発光部と非発光部の輝度差が急峻なほど、見切り性が良くなるといえる。
透光性部材の下面の面積と発光素子の上面の面積との比は、例えば、10:8~10程度が好ましく、10:9~10程度がより好ましく、10:9.5程度であることがさらに好ましい。
透光性部材の上面の面積は、発光素子の上面の面積と同等であることが好ましい。ここでの同等とは、±10%程度の差が許容されることを意味する。
例えば、透光性部材が青色発光素子に組み合わせて白色発光させる蛍光体を含有する場合、青色発光素子とこの透光性部材とを接合する接着剤に赤色蛍光体を含有させることにより、JIS規格に沿う、電球色に発光する発光装置とすることができる。
発光装置は、図1A及び図1Bに示すように、発光素子1及び/又は透光性部材2を包囲する光反射性部材6を備えていてもよい。なかでも、光反射性部材6は、発光素子1及び透光性部材2の双方を包囲するものが好ましい。ただし、光反射性部材6が透光性部材2を包囲する場合、透光性部材2の上面2aは、光反射性部材6で被覆されず、透光性部材2の上面2aと光反射性部材6とを面一とするか、光反射性部材6の上面から突出していることが好ましい。
発光装置では、図1A及び図1Bに示したように、発光素子1は、通常、基板4に載置されている。
基板の材料としては、ガラスエポキシ、樹脂、セラミックスなどの絶縁性部材、絶縁部材を形成した金属部材等が挙げられる。なかでも、耐熱性及び耐候性の高いセラミックスを利用したものが好ましい。セラミックス材料としては、アルミナ、窒化アルミニウム、ムライトなどが挙げられる。これらのセラミックス材料に、例えば、BTレジン、ガラスエポキシ、エポキシ系樹脂等の絶縁性材料を組み合わせてもよい。
基板4は、通常、その表面に発光素子1と接続される配線5を有するものが用いられる。
このような基板は、当該分野で公知であり、発光素子等が実装されるために使用される基板のいずれをも用いることができる。
図2A及び2Bに示す透光性部材2を用いて、図1A及び1Bに示す発光装置10を作製し、輝度分布を測定した。
この発光装置10は、基板4上に、発光素子1(サイズ:1.3mm×1.3mm)が4個直列に載置されている。基板は、熱電導率が170W/m・K程度の窒化アルミニウム板材の表面に、チタン、パラジウム、金がこの順にパターン蒸着されたものであり、その上にさらに金メッキが施されている。発光素子は、金からなるバンプによって、フリップチップ実装されている。
透光性部材2の凸部3の長さLは0.125mm、高さHは0.05mmとした。
発光素子1及び透光性部材2の側面は、ポッティング成形により、光反射性部材6で包囲されている。光反射性部材6は、シリコーン樹脂に酸化チタンが30wt%含有されており、熱伝導率が1W/m・K程度である。
光反射性部材6は、透光性部材2の上面2aと略面一であり、透光性部材2及び発光素子1の側面の肉厚は1.2mm程度である。
この透光性部材12では、上面及び下面のサイズ及び厚みならびに材料は、上述した透光部材2と同じであるが、その側面が、上面側では45°で傾斜した傾斜面を有し、下面側では、上面よりも長さL’(0.125mm)突出し、高さH’(0.075mm)の鉛直面を有している。
その結果、図3A及び3Bに示すように、透光性部材に凸部を備える本実施形態の発光装置では、発光部と非発光部との輝度差がより急峻となり、見切り性の良い発光装置を提供することができる。
Claims (7)
- 上面を光取り出し面とする発光素子と、
上面及び下面を有し、前記発光素子の光取り出し面を被覆する透光性部材と、を備える発光装置であって、
前記透光性部材は蛍光体を含有し、
前記透光性部材の上面及び下面は、それぞれ平坦面で、互いに平行であり、
前記透光性部材の側面は、前記下面に接し、側方に突出する凸部を有する発光装置。 - さらに、前記発光素子を包囲する光反射性部材を備える請求項1に記載の発光装置。
- さらに、前記透光性部材を包囲する光反射性部材を備える請求項1又は2に記載の発光装置。
- 前記透光性部材の凸部は、前記下面に接する鉛直面と、該鉛直面に接し、かつ前記透光性部材の上面に平行な面とを有する請求項1~3のいずれか1つに記載の発光装置。
- 前記透光性部材の凸部は、さらに、前記透光性部材の上面に平行な面及び上面に接する第2の鉛直面を有する請求項4に記載の発光装置。
- 前記透光性部材は、その上面が、前記光反射性部材と面一であるか又は前記光反射性部材の上面から突出している請求項2~5のいずれか1つに記載の発光装置。
- 前記透光性部材の上面の縁が、平面視、発光素子の外縁と一致する請求項1~6のいずれか1つに記載の発光装置。
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| MX2015014349A MX349884B (es) | 2013-04-17 | 2014-03-26 | Dispositivo de emision de luz. |
| JP2015512379A JP6444299B2 (ja) | 2013-04-17 | 2014-03-26 | 発光装置 |
| BR112015026316-0A BR112015026316B1 (pt) | 2013-04-17 | 2014-03-26 | Dispositivo emissor de luz |
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Also Published As
| Publication number | Publication date |
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| JPWO2014171277A1 (ja) | 2017-02-23 |
| MX2015014349A (es) | 2016-06-07 |
| BR112015026316A2 (pt) | 2017-07-25 |
| US9496465B2 (en) | 2016-11-15 |
| JP6444299B2 (ja) | 2018-12-26 |
| MX349884B (es) | 2017-08-17 |
| US20160079486A1 (en) | 2016-03-17 |
| BR112015026316B1 (pt) | 2022-01-11 |
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