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WO2014034379A1 - Agent de polissage, ensemble d'agent de polissage et procédé pour base de polissage - Google Patents

Agent de polissage, ensemble d'agent de polissage et procédé pour base de polissage Download PDF

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Publication number
WO2014034379A1
WO2014034379A1 PCT/JP2013/071002 JP2013071002W WO2014034379A1 WO 2014034379 A1 WO2014034379 A1 WO 2014034379A1 JP 2013071002 W JP2013071002 W JP 2013071002W WO 2014034379 A1 WO2014034379 A1 WO 2014034379A1
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WO
WIPO (PCT)
Prior art keywords
abrasive
polishing
mass
insulating material
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/071002
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English (en)
Japanese (ja)
Inventor
久貴 南
利明 阿久津
友洋 岩野
耕司 藤崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of WO2014034379A1 publication Critical patent/WO2014034379A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H10P95/062—
    • H10W10/014—
    • H10W10/17—

Definitions

  • the present invention relates to an abrasive, an abrasive set, and a method for polishing a substrate.
  • CMP Chemical Mechanical Polishing
  • STI shallow trench isolation
  • Trench Isolation pre-metal insulating material or interlayer in semiconductor device manufacturing process. This technique is indispensable for planarization of insulating materials, formation of plugs or embedded metal wirings, and the like.
  • silica-based abrasive containing silica (silicon oxide) particles such as fumed silica and colloidal silica as abrasive grains.
  • silica silica
  • colloidal silica as abrasive grains.
  • Silica-based abrasives are characterized by high versatility, and a wide variety of materials can be polished regardless of insulating materials and conductive materials by appropriately selecting the abrasive content, pH, additives, and the like.
  • abrasives containing cerium compound particles as abrasive grains mainly for insulating materials such as silicon oxide there is an increasing demand for abrasives containing cerium compound particles as abrasive grains mainly for insulating materials such as silicon oxide.
  • a cerium oxide-based abrasive containing cerium oxide (ceria) particles as abrasive grains can polish silicon oxide at high speed even with a lower abrasive grain content than a silica-based abrasive (see, for example, Patent Documents 1 and 2 below).
  • a stopper (a polishing stop layer including a stopper material) disposed on the convex portion of the substrate having the concavo-convex pattern, and the substrate and the stopper so as to fill the concave portion of the concavo-convex pattern.
  • the insulating material is polished using a stopper. This is because it is difficult to control the polishing amount of the insulating material (the amount of removal of the insulating material), and the degree of polishing is controlled by polishing the insulating material until the stopper is exposed.
  • the abrasive contains the hydroxide particles of the tetravalent metal element and at least one of the cationic polymer and the polysaccharide, so that the silicon oxide is polished at a high speed and An excellent polishing selectivity of silicon oxide can be obtained.
  • JP-A-10-106994 Japanese Patent Application Laid-Open No. 08-022970 International Publication No. 2002/067309 International Publication No. 2012/070541 International Publication No. 2012/070542 JP 2006-249129 A International Publication No. 2009/131133 International Publication No. 2012/070544
  • silicon nitride has been used as a stopper material, but in recent years, polysilicon has been increasingly used as a stopper material. In this case, it is necessary to further improve the polishing selectivity of the insulating material with respect to the polysilicon.
  • few abrasives have been known which are excellent in polishing selectivity of insulating materials with respect to polysilicon.
  • the stopper material used may differ depending on the structure of the semiconductor element.
  • abrasive having a high polishing selectivity for a certain type of stopper material a high polishing selectivity is often not obtained for another type of stopper material.
  • many abrasives are inferior in versatility, and the present situation is that abrasives are used properly depending on the type of stopper material.
  • the present invention is intended to solve the above-described problems, and provides an abrasive, an abrasive set, and a substrate polishing method capable of improving the polishing selectivity of an insulating material with respect to a stopper material. Objective.
  • an object of the present invention is to provide an abrasive, an abrasive set, and a substrate polishing method that can improve the polishing selectivity of an insulating material with respect to polysilicon.
  • a first aspect of the abrasive according to the present invention is an abrasive containing a hydroxide of a tetravalent metal element, and a compound in which at least one of oxyethylene and oxypropylene is added to ethylenediamine (hereinafter referred to as “EOPO adduct” in some cases). And a liquid medium.
  • EOPO adduct ethylenediamine
  • the polishing selectivity of the insulating material with respect to the stopper material can be improved.
  • the insulating material can be satisfactorily polished using the stopper.
  • the polishing selectivity of the insulating material with respect to polysilicon can be improved.
  • the insulating material can be satisfactorily polished using the stopper.
  • polishing selectivity of the insulating material with respect to silicon nitride can be improved.
  • the insulating material can be satisfactorily polished using the stopper. Since the abrasive
  • the polishing agent according to the first aspect in the CMP technique for flattening the shallow trench isolation insulating material, the premetal insulating material, the interlayer insulating material, etc., the insulating material is polished at a high speed and an advanced flat surface is obtained. You can also. Furthermore, according to the abrasive
  • a second aspect of the abrasive according to the present invention is an aspect in which the abrasive according to the first aspect further contains polyvinylpyrrolidone.
  • the polishing rate of the insulating material is further improved as compared with the first aspect, and therefore the polishing selectivity of the insulating material with respect to the stopper material is further improved.
  • Can do by using polyvinyl pyrrolidone together with the EOPO adduct, the polishing rate of the insulating material is further improved as compared with the first aspect, and therefore the polishing selectivity of the insulating material with respect to the stopper material is further improved. Can do.
  • a third aspect of the abrasive according to the present invention is an aspect in which the abrasive according to the first aspect further contains a glycerin compound.
  • the polishing rate of the insulating material is further improved and the polishing rate of the stopper material is further suppressed as compared with the first aspect.
  • the polishing selectivity of the insulating material can be further improved.
  • a fourth aspect of the abrasive according to the present invention is an aspect in which the abrasive according to the first aspect further contains polyvinylpyrrolidone and a glycerin compound.
  • the polishing rate of the insulating material is further improved as compared with the first aspect. Therefore, the polishing selectivity of the insulating material with respect to the stopper material. Can be further improved.
  • the glycerol compound is preferably at least one selected from the group consisting of polyglycerol, diglycerol derivatives and polyglycerol derivatives.
  • polyglycerin is polyglycerin (polyglycerin of trimer or higher) having an average degree of polymerization of glycerin of 3 or more.
  • diglycerin derivative is a compound in which a functional group is introduced into diglycerin, and “polyglycerin derivative” introduces a functional group into polyglycerol having an average degree of polymerization of glycerin of 3 or more. It is a compound. Details will be described later.
  • the glycerol compound is at least one selected from the group consisting of polyglycerol and diglycerol derivatives.
  • the polishing rate of an insulating material can be improved further.
  • the glycerin compound is polyglycerin.
  • the polishing rate of the stopper material can be further suppressed.
  • the stopper material is polysilicon, the polishing rate of the stopper material can be further suppressed.
  • abrasive of the fourth aspect abrasive that uses both polyvinylpyrrolidone and a glycerin compound in combination with the EOPO adduct. That is, when polyglycerin is used as the glycerin compound, the polishing rate of the insulating material is further improved and the polishing rate of the stopper material is further suppressed, so that the polishing selectivity of the insulating material with respect to the stopper material is further improved. Can do.
  • the tetravalent metal element is preferably at least one selected from the group consisting of rare earth elements and zirconium. Thereby, the polishing rate of the insulating material can be further improved.
  • the content of the EOPO adduct is preferably 0.01% by mass or more and 10% by mass or less based on the total mass of the abrasive. Thereby, the polishing rate of the stopper material can be further suppressed.
  • one embodiment of the present invention relates to the use of the above polishing agent for polishing a surface to be polished containing silicon oxide.
  • the surface to be polished containing silicon oxide is polished to remove excess silicon oxide.
  • said abrasive for polishing relates to the use of said abrasive for polishing. That is, one embodiment of the abrasive according to the present invention is preferably used for polishing a surface to be polished containing silicon oxide.
  • the surface to be polished containing silicon oxide is polished to remove excess silicon oxide. It is preferably used for removing.
  • the constituents of the abrasive are stored separately in a first liquid and a second liquid
  • the first liquid includes abrasive grains and a liquid medium
  • the second liquid is Including the EOPO adduct and a liquid medium.
  • the second liquid may further include polyvinyl pyrrolidone, or the second liquid may further include a glycerin compound.
  • the first aspect of the substrate polishing method according to the present invention includes a step of polishing a surface to be polished of the substrate using the abrasive. According to such a method for polishing a substrate, the same effect as the abrasive according to the present invention can be obtained by using the abrasive.
  • a second aspect of the substrate polishing method according to the present invention includes a step of polishing the surface to be polished of the substrate using an abrasive obtained by mixing the first liquid and the second liquid in the abrasive set. Prepare. According to such a method for polishing a substrate, the same effect as the abrasive according to the present invention can be obtained by using the abrasive set.
  • the polishing selectivity of the insulating material with respect to the stopper material can be improved.
  • the insulating material can be satisfactorily polished using the stopper.
  • the polishing selectivity of the insulating material with respect to polysilicon can be improved, and the polishing selectivity of the insulating material with respect to silicon nitride can be improved. Accordingly, even when polysilicon, silicon nitride, or the like is used as the stopper material, the insulating material can be polished well using the stopper.
  • the present invention as a technique for planarizing a substrate surface in the manufacture of a semiconductor device, for example, in a CMP technique for planarizing a shallow trench isolation insulating material, a premetal insulating material, an interlayer insulating material, etc. It is possible to obtain a highly flat surface while polishing. Furthermore, according to the present invention, the insulating material can be polished at a high speed, and the insulating material can be polished with low polishing scratches.
  • polishing agent the polishing agent set, and the substrate polishing method using these according to the embodiment of the present invention will be described in detail.
  • abrasive is defined as a composition that touches the surface to be polished during polishing.
  • the phrase “abrasive” itself does not limit the components contained in the abrasive.
  • the abrasive according to the present embodiment contains abrasive grains.
  • Abrasive grains are "abrasive particles" In this specification, it is called “abrasive grain”.
  • Abrasive grains are generally solid particles. In this case, at the time of polishing, it is considered that the removal target is removed by the mechanical action of the abrasive grains and the chemical action of the abrasive grains (mainly the surface of the abrasive grains). It is not limited to this.
  • the abrasive according to this embodiment can be used as, for example, an abrasive for CMP (hereinafter referred to as “CMP abrasive”).
  • CMP abrasive an abrasive for CMP
  • the first aspect of the abrasive according to the present embodiment includes (A) abrasive grains containing a tetravalent metal element hydroxide, and (B) at least one of oxyethylene and oxypropylene added to ethylenediamine.
  • the compound (EOPO adduct) and a liquid medium are contained.
  • the second aspect of the abrasive according to this embodiment includes (A) abrasive grains containing a hydroxide of a tetravalent metal element, (B) the EOPO adduct, (C) polyvinylpyrrolidone, a liquid medium, Containing.
  • the third aspect of the abrasive according to the present embodiment includes (A) abrasive grains containing a hydroxide of a tetravalent metal element, (B) the EOPO adduct, (D) a glycerin compound, a liquid medium, Containing.
  • polishing agent which concerns on this embodiment is (A) the abrasive grain containing the hydroxide of a tetravalent metal element, (B) the said EOPO adduct, (C) polyvinylpyrrolidone, and (D) glycerin. A compound and a liquid medium are contained.
  • the essential components and components that can be optionally added are described below.
  • the abrasive grain contains the abrasive grain containing the hydroxide of a tetravalent metal element.
  • the “tetravalent metal element hydroxide” is a compound containing a tetravalent metal (M 4+ ) and at least one hydroxide ion (OH ⁇ ).
  • the hydroxide of the tetravalent metal element may contain an anion (for example, nitrate ion NO 3 ⁇ , sulfate ion SO 4 2 ⁇ ) other than hydroxide ions.
  • a hydroxide of a tetravalent metal element may contain an anion (for example, nitrate ion or sulfate ion) bonded to the tetravalent metal element.
  • the abrasive grains containing a hydroxide of the tetravalent metal element have a higher reactivity with an insulating material (for example, silicon oxide) than a conventional abrasive grain made of silica, alumina, ceria, etc. Can be polished at a polishing rate. Moreover, it can grind
  • Examples of other abrasive grains that can be used in combination with abrasive grains containing a hydroxide of a tetravalent metal element in the abrasive according to the present embodiment include silica, alumina, and ceria particles. Further, as the abrasive grains containing a tetravalent metal element hydroxide, composite particles containing a tetravalent metal element hydroxide and silica can be used.
  • the content of the tetravalent metal element hydroxide is preferably 80% by mass or more, more preferably 90% by mass or more, still more preferably 95% by mass or more, particularly preferably 98% by mass or more, based on the whole abrasive grain. 99 mass% or more is very preferable.
  • the abrasive grains are composed of the hydroxide of the tetravalent metal element (100% by mass of the abrasive grains is a hydroxide of the tetravalent metal element). Most preferably).
  • the tetravalent metal element is preferably at least one selected from the group consisting of rare earth elements and zirconium.
  • the tetravalent metal element is preferably a rare earth element from the viewpoint of further improving the polishing rate of the insulating material.
  • the rare earth element capable of taking tetravalence include lanthanoids such as cerium, praseodymium, and terbium. Among these, cerium is preferable from the viewpoint of further improving the polishing rate of the insulating material.
  • a rare earth element hydroxide and a zirconium hydroxide may be used in combination, or two or more kinds of rare earth element hydroxides may be selected and used.
  • a hydroxide of a tetravalent metal element can be prepared by reacting a salt of a tetravalent metal element with a basic compound (alkali source).
  • a basic compound alkali source
  • a technique of mixing a salt of a tetravalent metal element and an alkali solution can be used as a method for producing abrasive grains containing a hydroxide of a tetravalent metal element. This method is described in, for example, “Science of rare earths” (edited by Adiya Ginya, Kagaku Dojin, 1999), pages 304-305.
  • a salt of a tetravalent metal element a conventionally known salt can be used without particular limitation, and M (SO 4 ) 2 , M (NH 4 ) 2 (NO 3 ) 6 , M (NH 4 ) 4 (SO 4 ) 4 (M represents a rare earth element), Zr (SO 4 ) 2 .4H 2 O, and the like.
  • M is preferably chemically active cerium (Ce).
  • Basic compounds in the alkaline solution include organic bases such as imidazole, tetramethylammonium hydroxide (TMAH), guanidine, triethylamine, pyridine, piperidine, pyrrolidine, chitosan; ammonia, potassium hydroxide, sodium hydroxide, calcium hydroxide.
  • organic bases such as Among these, ammonia and imidazole are preferable, and imidazole is more preferable from the viewpoint of further improving the polishing rate of the insulating material.
  • the abrasive grains synthesized by the above method can be washed to remove metal impurities.
  • a method of repeating solid-liquid separation several times by centrifugation or the like can be used. Moreover, it can also wash
  • the abrasive grains obtained above are agglomerated, it is preferably dispersed in a liquid medium (for example, water) by an appropriate method.
  • a liquid medium for example, water
  • a method for dispersing abrasive grains in a liquid medium dispersion processing with a normal stirrer; mechanical dispersion with a homogenizer, ultrasonic disperser, wet ball mill, etc .; centrifugation, dialysis, ultrafiltration, ion exchange resin, etc. Examples include removal of contaminating ions.
  • the dispersion method and the particle size control method for example, the method described in “Dispersion Technology Complete Collection” [Information Organization Co., Ltd., July 2005] Chapter 3, “Latest Development Trends and Selection Criteria of Various Dispersers” Can be used.
  • the dispersibility of the abrasive grains can also be improved by performing the above-described cleaning treatment to lower the electrical conductivity of the dispersion liquid containing abrasive grains (for example, 500 mS / m or less). Therefore, the cleaning process may be applied as a dispersion process, and the cleaning process and the dispersion process may be used in combination.
  • the abrasive grains containing a tetravalent metal element hydroxide are light having a wavelength of 400 nm in an aqueous dispersion in which the content of the abrasive grains is adjusted to 1.0 mass%. It is preferable to give an absorbance of 1.00 or more.
  • the “aqueous dispersion” in which the content of abrasive grains is adjusted to a predetermined amount means a liquid containing a predetermined amount of abrasive grains and water.
  • the tetravalent metal (M 4+ ), 1 to 3 hydroxide ions (OH ⁇ ), and 1 to 3 anions (X c ⁇ ) are formed as part of the abrasive grains. Abrasive grains containing elemental hydroxides).
  • the electron-withdrawing anion (X c ⁇ ) acts to improve the reactivity of hydroxide ions, and the amount of M (OH) a X b increases. It is considered that the polishing rate is improved along with this.
  • the abrasive grains containing a tetravalent metal element hydroxide may contain not only M (OH) a X b but also M (OH) 4 , MO 2, and the like.
  • M (OH) a X b examples include NO 3 ⁇ , SO 4 2 ⁇ and the like.
  • the abrasive grains containing tetravalent metal element hydroxides contain M (OH) a Xb after the abrasive grains are thoroughly washed with pure water and then subjected to the FT-IR ATR (Fourier transform Infrared Spectrometer Attenuated Total).
  • FT-IR ATR Fullier transform Infrared Spectrometer Attenuated Total
  • This can be confirmed by a method of detecting a peak corresponding to an anion (X c ⁇ ) by a reflection method or a Fourier transform infrared spectrophotometer total reflection measurement method.
  • the presence of anions (X c ⁇ ) can also be confirmed by XPS (X-ray Photoelectron Spectroscopy, X-ray photoelectron spectroscopy).
  • the abrasive has an absorbance of 1.000 or more with respect to light having a wavelength of 290 nm in an aqueous dispersion in which the content of the abrasive is adjusted to 0.0065% by mass. It is preferable to give.
  • the reason why the polishing rate can be improved is not necessarily clear, but the present inventor thinks as follows.
  • a particle containing M (OH) a X b produced according to the production conditions of a tetravalent metal element hydroxide has an absorption peak near a wavelength of 290 nm, for example, Ce 4+ ( Particles composed of OH ⁇ ) 3 NO 3 — have an absorption peak at a wavelength of 290 nm. Therefore, it is considered that the polishing rate is improved as the abundance of M (OH) a Xb increases and the absorbance to light having a wavelength of 290 nm increases.
  • the hydroxide of the tetravalent metal element (for example, M (OH) a X b ) tends not to absorb light having a wavelength of 450 nm or more, particularly 450 to 600 nm. Therefore, from the viewpoint of suppressing an adverse effect on polishing due to inclusion of impurities and polishing the insulating material at a further excellent polishing rate, the abrasive grains have a content of the abrasive grains of 0.0065 mass. In an aqueous dispersion adjusted to%, it is preferable to give an absorbance of 0.010 or less to light having a wavelength of 450 to 600 nm.
  • the abrasive grains have a light transmittance of 50% / light with respect to light having a wavelength of 500 nm in an aqueous dispersion in which the content of the abrasive grains is adjusted to 1.0 mass%. It is preferable that it gives cm or more.
  • the reason why the polishing rate can be improved is not necessarily clear, but the present inventor thinks as follows. That is, it is considered that the chemical action is more dominant than the mechanical action of the action of the abrasive grains containing the hydroxide of the tetravalent metal element. Therefore, it is considered that the number of abrasive grains contributes more to the polishing rate than the size of the abrasive grains.
  • the abrasive grains present in the aqueous dispersion are particles having a large particle diameter (hereinafter referred to as “coarse particles”). It is thought that there are relatively many.
  • coarse particles As a result, the number of abrasive grains acting on the surface to be polished per unit area (the number of effective abrasive grains) decreases, and the specific surface area of the abrasive grains in contact with the surface to be polished decreases, so the polishing rate may decrease. Conceivable.
  • the abrasive grains present in the aqueous dispersion are considered to be in a state where there are few “coarse particles”. It is done. In this way, when the amount of coarse particles is small, even if an additive is added to the abrasive, there are few coarse particles that become the core of agglomeration. Particle size is reduced.
  • the polishing rate of the insulating material is easily improved.
  • the absorbance and light transmittance that the abrasive grains contained in the abrasive give in the aqueous dispersion can be measured using, for example, a spectrophotometer (device name: U3310) manufactured by Hitachi, Ltd. Specifically, for example, an aqueous dispersion in which the content of abrasive grains is adjusted to 1.0 mass% or 0.0065 mass% is prepared as a measurement sample. About 4 mL of this measurement sample is put into a 1 cm square cell, and the cell is set in the apparatus. Next, the absorbance is measured in the wavelength range of 200 to 600 nm, and the absorbance and light transmittance are determined from the obtained chart.
  • a spectrophotometer device name: U3310
  • the absorbance and light transmittance that the abrasive grains contained in the abrasive give in the aqueous dispersion are obtained by removing the solid components other than abrasive grains and the liquid components other than water, and then removing the aqueous dispersion having a predetermined abrasive grain content. It can be prepared and measured using the aqueous dispersion.
  • the solid component or liquid component can be removed by centrifugation using a centrifugal machine that can apply gravitational acceleration of several thousand G or less, Centrifugal methods such as ultracentrifugation using a centrifuge; chromatography methods such as distribution chromatography, adsorption chromatography, gel permeation chromatography, ion exchange chromatography; natural filtration, vacuum filtration, pressure filtration, ultrafiltration Filtration methods such as distillation; distillation methods such as vacuum distillation and atmospheric distillation can be used, and these may be combined as appropriate.
  • Centrifugal methods such as ultracentrifugation using a centrifuge
  • chromatography methods such as distribution chromatography, adsorption chromatography, gel permeation chromatography, ion exchange chromatography
  • natural filtration, vacuum filtration, pressure filtration, ultrafiltration Filtration methods such as distillation
  • distillation methods such as vacuum distillation and atmospheric distillation can be used, and these may be combined as appropriate.
  • a compound having a weight average molecular weight of tens of thousands or more for example, 50,000 or more
  • a chromatography method, a filtration method and the like can be mentioned, and gel permeation chromatography and ultrafiltration are preferable.
  • the abrasive grains contained in the abrasive can be passed through the filter by setting appropriate conditions.
  • examples thereof include a chromatography method, a filtration method, and a distillation method, and gel permeation chromatography, ultrafiltration, and vacuum distillation are preferable.
  • abrasive grains When multiple types of abrasive grains are included, examples thereof include filtration methods and centrifugal separation methods. In the case of filtration methods, abrasives containing a tetravalent metal element hydroxide in the filtrate and in the case of centrifugal methods in the liquid phase. Contains more grains.
  • the abrasive grains and / or other components can be fractionated under the following conditions.
  • Sample solution 100 ⁇ L of abrasive Detector: manufactured by Hitachi, Ltd., UV-VIS detector, trade name “L-4200”, wavelength: 400 nm Integrator: Hitachi, Ltd., GPC integrator, product name “D-2500” Pump: Hitachi, Ltd., trade name “L-7100” Column: Hitachi Chemical Co., Ltd., packed column for aqueous HPLC, trade name “GL-W550S” Eluent: Deionized water Measurement temperature: 23 ° C Flow rate: 1 mL / min (pressure: about 40-50 kg / cm 2 ) Measurement time: 60 minutes
  • a deaeration device it is preferable to deaerate the eluent using a deaeration device before performing chromatography.
  • the deaerator cannot be used, it is preferable to deaerate the eluent in advance with ultrasonic waves or the like.
  • the abrasive grains may not be collected under the above conditions. In this case, separation can be achieved by optimizing the amount of sample solution, column type, eluent type, measurement temperature, flow rate, and the like. In addition, by adjusting the pH of the abrasive, the distillation time of components contained in the abrasive may be adjusted and separated from the abrasive grains. When there are insoluble components in the abrasive, it is preferable to remove the insoluble components by filtration, centrifugation or the like, if necessary.
  • the lower limit of the average grain size of the abrasive grains in the abrasive is preferably 1 nm or more, more preferably 2 nm or more, and further preferably 3 nm or more.
  • the upper limit of the average grain size of the abrasive grains is preferably 300 nm or less, more preferably 250 nm or less, and still more preferably 200 nm or less, from the viewpoint of further suppressing the surface to be polished from being scratched. From the above viewpoint, the average grain size of the abrasive grains is more preferably 1 nm or more and 300 nm or less.
  • the “average particle diameter” of the abrasive grains means the average secondary particle diameter of the abrasive grains in the abrasive.
  • a light diffraction scattering type particle size distribution meter for example, COULTER Electronics, trade name: COULTER N4SD, or Malvern Instruments, trade name: Zeta Sizer 3000HSA
  • COULTER Electronics trade name: COULTER N4SD
  • Malvern Instruments trade name: Zeta Sizer 3000HSA
  • the lower limit of the abrasive content is preferably 0.005% by mass or more, more preferably 0.01% by mass or more, based on the total mass of the abrasive, from the viewpoint of further improving the polishing rate of the insulating material. 02 mass% or more is still more preferable, and 0.04 mass% or more is especially preferable.
  • the upper limit of the abrasive content is preferably 20% by mass or less, more preferably 15% by mass or less, and even more preferably 10% by mass or less, based on the total mass of the abrasive, from the viewpoint of increasing the storage stability of the abrasive. preferable. From the above viewpoint, the content of the abrasive grains is more preferably 0.005% by mass or more and 20% by mass or less based on the total mass of the abrasive.
  • the cost and polishing scratches can be further reduced by further reducing the content of abrasive grains.
  • the content of the abrasive grains decreases, the polishing rate of the insulating material or the like tends to decrease.
  • abrasive grains containing a hydroxide of a tetravalent metal element can obtain a predetermined polishing rate even with a small amount, so that the balance between the polishing rate and the advantage of reducing the content of abrasive grains is balanced.
  • the content of abrasive grains can be further reduced.
  • the content of the abrasive grains is preferably 5% by mass or less, more preferably 3% by mass or less, still more preferably 1% by mass or less, particularly preferably 0.5% by mass or less, and 0.3% by mass. % Or less is very preferable.
  • polishing agent which concerns on this embodiment contains an additive.
  • the “additive” means a polishing agent other than the liquid medium and the abrasive grains in order to adjust polishing characteristics such as polishing rate and polishing selectivity; and abrasive characteristics such as abrasive dispersibility and storage stability. Refers to the substance contained.
  • polishing agent which concerns on this embodiment contains the compound (EOPO adduct) which at least one of oxyethylene and oxypropylene added to ethylenediamine as a 1st additive.
  • the first additive has an effect of improving the polishing selectivity of the insulating material with respect to the stopper material. It is considered that the interaction between the abrasive grains and the stopper material can be reduced by the interaction of the first additive with the stopper material.
  • the addition of at least one of oxyethylene and oxypropylene to ethylenediamine means that the hydrogen atom bonded to the nitrogen atom of ethylenediamine is replaced by at least one of oxyethylene and oxypropylene. Since ethylenediamine has four hydrogen atoms bonded to nitrogen atoms, four substituents can be added to the ethylenediamine.
  • the first additive may have a structure in which at least one substituent is added to ethylenediamine. Examples of the substituent include oxyethylene-oxypropylene copolymer, oxyethylene homopolymer, oxypropylene homopolymer, oxyethylene (single), and oxypropylene (single).
  • the first additive preferably contains a compound having a structure in which an oxyethylene-oxypropylene copolymer is added to ethylenediamine.
  • a compound represented by the following general formula (I) (Sequential poloxamine), a compound represented by the following general formula (II) (Reverse poloxamine) and the like.
  • a11, a12, a13 and a14 each independently represents an integer of 0 to 1000
  • b11, b12, b13 and b14 each independently represents an integer of 0 to 500.
  • at least one of a11, a12, a13, a14, b11, b12, b13, and b14 is 1 or more.
  • a21, a22, a23 and a24 each independently represents an integer of 0 to 1000, and b21, b22, b23 and b24 each independently represents an integer of 0 to 500. However, at least one of a21, a22, a23, a24, b21, b22, b23 and b24 is 1 or more.
  • a11, a12, a13 and a14 may be the same numerical values or different numerical values.
  • b11, b12, b13 and b14 may be the same numerical values or different numerical values.
  • a21, a22, a23 and a24 may be the same numerical values or different numerical values.
  • b21, b22, b23 and b24 may be the same numerical values or different numerical values.
  • the compound represented by the general formula (I) includes a compound in which at least one of a11, a12, a13 and a14 is 1 or more and at least one of b11, b12, b13 and b14 is 1 or more. preferable.
  • the compound represented by the general formula (II) includes a compound in which at least one of a21, a22, a23 and a24 is 1 or more and at least one of b21, b22, b23 and b24 is 1 or more. preferable.
  • the compound represented by the general formula (I) preferably contains at least one oxyethylene-oxypropylene copolymer bonded to a nitrogen atom derived from ethylenediamine.
  • the compound represented by the general formula (II) preferably contains at least one oxyethylene-oxypropylene copolymer bonded to a nitrogen atom derived from ethylenediamine.
  • Examples of the oxyethylene-oxypropylene copolymer include a random copolymer of oxyethylene and oxypropylene, an alternating copolymer, a block copolymer, etc. Among them, a viewpoint excellent in ease of production and availability Therefore, a block copolymer is preferable.
  • poloxamines refer to poloxamine and reverse poloxamine.
  • Poloxamine is a compound in which an oxypropylene moiety in an oxyethylene-oxypropylene copolymer (ethylene glycol-propylene glycol copolymer) is bonded to a nitrogen atom of ethylenediamine (in the above formula (I), a11, a12, a13, a14, b11). , B12, b13 and b14 are 1 or more).
  • Tetronic series manufactured by BASF
  • Adeka Pluronic TR series manufactured by ADEKA Corporation
  • Reverse poloxamine is a compound in which an oxyethylene moiety in an oxyethylene-oxypropylene copolymer is bonded to a nitrogen atom of ethylenediamine (in the above formula (II), a21, a22, a23, a24, b21, b22, b23 and b24 are One or more compounds).
  • a21, a22, a23, a24, b21, b22, b23 and b24 are One or more compounds.
  • an Adeka Pluronic TR series reverse type manufactured by ADEKA Corporation
  • the upper limit of the total molecular weight of the oxypropylene part (propylene glycol part) in the first additive is preferably 2,000 or less, and preferably 15,000, from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material. The following is more preferable, and 10,000 or less is more preferable.
  • the lower limit of the total molecular weight of the oxypropylene moiety in the first additive is preferably 300 or more, more preferably 500 or more, still more preferably 700 or more, from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material. 1200 or more is particularly preferable. From the above viewpoint, the total molecular weight of the oxypropylene moiety in the first additive is more preferably 300 or more and 20,000 or less.
  • the upper limit of the mass ratio of the entire oxyethylene moiety (ethylene glycol moiety) in the first additive is a viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material. Therefore, 80% or less is preferable, 70% or less is more preferable, and 60% or less is still more preferable.
  • the lower limit of the mass ratio of the entire oxyethylene portion in the first additive is preferably 3% or more, more preferably 5% or more, and more preferably 10% or more from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material. Further preferred. From the above viewpoint, the mass ratio of the entire oxyethylene portion in the first additive is more preferably 3% or more and 80% or less.
  • the molecular weight of the oxypropylene moiety in the first additive and the mass ratio of the entire oxyethylene moiety can be measured by the following method.
  • Examples of the compound represented by the general formula (I) include compounds represented by the following general formula (Ia).
  • Examples of the compound represented by the general formula (II) include compounds represented by the following (IIa).
  • [In the formula (Ia) a11, a12, a13 and a14 each independently represents an integer of 0 to 1000, and b11, b12, b13 and b14 each independently represents an integer of 0 to 500. However, at least one of a11, a12, a13, a14, b11, b12, b13, and b14 is 1 or more.
  • a21, a22, a23 and a24 each independently represents an integer of 0 to 1000, and b21, b22, b23 and b24 each independently represents an integer of 0 to 500. However, at least one of a21, a22, a23, a24, b21, b22, b23 and b24 is 1 or more.
  • Each of a11, a12, a13 and a14 in formula (I), and a21, a22, a23 and a24 in formula (II) are each one or more from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material.
  • Each of a11, a12, a13, a14, a21, a22, a23 and a24 is preferably 910 or less, more preferably 680 or less, and further preferably 400 or less, from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material. preferable.
  • Each of b11, b12, b13 and b14 in the formula (I) and b21, b22, b23 and b24 in the formula (II) is one or more from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material.
  • Each of b11, b12, b13, b14, b21, b22, b23 and b24 is preferably 350 or less, more preferably 320 or less, and even more preferably 300 or less from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material. preferable.
  • the first additive can be used alone or in combination of two or more for the purpose of adjusting the polishing selectivity of the insulating material with respect to the stopper material.
  • a plurality of compounds having different degrees of polymerization can be used in combination.
  • the lower limit of the content of the first additive is preferably 0.01% by mass or more, more preferably 0.03% by mass or more based on the total mass of the abrasive from the viewpoint of further improving the polishing rate of the insulating material. 0.05 mass% or more is more preferable, and 0.1 mass% or more is particularly preferable.
  • the upper limit of the content of the first additive is preferably 10% by mass or less, more preferably 5% by mass or less, based on the total mass of the abrasive, from the viewpoint of suppressing the viscosity of the abrasive from becoming excessively high. .
  • the content of the first additive is more preferably 0.01% by mass or more and 10% by mass or less based on the total mass of the abrasive.
  • the sum total of content of each compound satisfy
  • the abrasive according to this embodiment preferably contains at least one selected from the group consisting of (C) polyvinylpyrrolidone and (D) glycerin compound as the second additive.
  • Each of the second additives has the effect of further improving the polishing rate of the insulating material.
  • polyvinylpyrrolidone the interaction between the abrasive grains and the insulating material is increased, and it is considered that the polishing rate of the insulating material is further improved.
  • the glycerin compound the hydroxyl group of the glycerin compound interacts with the abrasive grains and the insulating material, and the abrasive grains and the insulating material are bridged by hydrogen bonds, thereby increasing the interaction between the abrasive grains and the insulating material. It is considered that the polishing rate of the insulating material is further improved.
  • the second additive can be used alone or in combination of two or more for the purpose of adjusting the polishing selectivity of the insulating material with respect to the stopper material, the flatness and the polishing speed of the insulating material.
  • a plurality of compounds having different degrees of polymerization can be used in combination.
  • the upper limit of the weight average molecular weight of the polyvinylpyrrolidone is preferably 2 million or less, more preferably 1.5 million or less, still more preferably 1 million or less, and particularly preferably 750,000 or less, 500,000 or less is very preferable.
  • the lower limit of the weight average molecular weight of polyvinylpyrrolidone is preferably 1000 or more, more preferably 2000 or more, still more preferably 5000 or more, and particularly preferably 10,000 or more. From the above viewpoint, the weight average molecular weight of polyvinylpyrrolidone is more preferably 1000 or more and 2 million or less.
  • the weight average molecular weight of polyvinylpyrrolidone can be measured on condition of the following by the gel permeation chromatography method (GPC) using the calibration curve of a standard polystyrene, for example.
  • the lower limit of the content of polyvinylpyrrolidone is preferably 0.001% by mass or more, more preferably 0.002% by mass or more, based on the total mass of the abrasive. 005% by mass or more is more preferable, and 0.008% by mass or more is particularly preferable.
  • the upper limit of the content of polyvinylpyrrolidone is preferably 10% by mass or less, more preferably 5% by mass or less, based on the total mass of the abrasive, from the viewpoint of suppressing the viscosity of the abrasive from becoming excessively high.
  • the content of polyvinyl pyrrolidone is more preferably 0.001% by mass or more and 10% by mass or less based on the total mass of the abrasive.
  • a glycerin compound is a compound having a glycerin skeleton.
  • the glycerol compound is preferably at least one selected from the group consisting of polyglycerol, diglycerol derivatives and polyglycerol derivatives, more preferably at least one selected from the group consisting of polyglycerol and diglycerol derivatives. More preferred is polyglycerin.
  • Polyglycerol is defined as polyglycerol having an average degree of polymerization of glycerol of 3 or more (polyglycerol having an average trimer or more).
  • the average degree of polymerization of polyglycerol is preferably 4 or more from the viewpoint of further improving the polishing rate of the insulating material.
  • the upper limit of the average degree of polymerization of polyglycerol is not particularly limited, but is preferably 100 or less, more preferably 50 or less, and still more preferably 30 or less, from the viewpoint of excellent availability.
  • polyglycerin # 310 examples include polyglycerin # 310, polyglycerin # 500, and polyglycerin # 750 (trade names: all manufactured by Sakamoto Pharmaceutical Co., Ltd.).
  • the diglycerin derivative is a compound in which a functional group is introduced into diglycerin.
  • the functional group include a polyoxyalkylene group, a fatty acid ester group, and an ether group.
  • Examples of the diglycerin derivative having a polyoxyalkylene group introduced include polyoxyalkylene diglyceryl ether.
  • Diglycerin fatty acid ester etc. are mentioned as a diglycerol derivative which introduce
  • the diglycerin derivative introduced with an ether group include diglycerin alkyl ether and diglycerin polyalkyl ether.
  • the diglycerin derivative is preferably at least one selected from the group consisting of polyoxyalkylene diglyceryl ether, diglycerin fatty acid ester, diglycerin alkyl ether and diglycerin polyalkyl ether.
  • Examples of the polyoxyalkylene diglyceryl ether include polyoxyethylene diglyceryl ether (Sakamoto Pharmaceutical Co., Ltd., SC-E series, etc.), polyoxypropylene diglyceryl ether (Sakamoto Pharmaceutical Co., Ltd., SY-DP series, SC-P series).
  • Examples of the diglycerin fatty acid ester include MCA-150 manufactured by Sakamoto Pharmaceutical Co., Ltd.
  • Examples of the diglycerin alkyl ether include 3- [2-alkoxy-1- (methoxymethyl) ethoxy] -1,2-propanediol.
  • the polyglycerin derivative is a compound in which a functional group is introduced into polyglycerin having an average degree of polymerization of glycerin of 3 or more.
  • the functional group include a polyoxyalkylene group, a fatty acid ester group, and an ether group.
  • the average degree of polymerization of the polyglycerol skeleton in the polyglycerol derivative is 3 or more, and preferably 4 or more, from the viewpoint of further improving the polishing rate of the insulating material. From the viewpoint of production, the upper limit of the average degree of polymerization of the polyglycerol skeleton in the polyglycerol derivative is preferably 100 or less, more preferably 50 or less, and even more preferably 30 or less.
  • polyglycerin derivative examples include polyoxyalkylene polyglyceryl ether, polyglycerin fatty acid ester, polyglycerin alkyl ether, and the like.
  • polyoxyalkylene polyglyceryl ether examples include polyoxyethylene polyglyceryl ether (manufactured by Sakamoto Pharmaceutical Co., Ltd., # 310-EO60, etc.), polyoxypropylene polyglyceryl ether, and the like.
  • polyglycerin fatty acid ester examples include glycerin fatty acid ester (Sakamoto Pharmaceutical Co., Ltd., SY glycerase series, etc.).
  • polyglycerin alkyl ether examples include pentaglycerin dodecyl ether.
  • the upper limit of the weight average molecular weight of the glycerin compound is not particularly limited, but is preferably 5000 or less, more preferably 3000 or less, and still more preferably 2000 or less from the viewpoint of excellent workability and foamability.
  • the lower limit of the weight average molecular weight of the glycerin compound is preferably 250 or more, more preferably 400 or more, and even more preferably 500 or more. From the above viewpoint, the weight average molecular weight of the glycerin compound is more preferably 250 or more and 5000 or less.
  • the weight average molecular weight of the glycerin compound can be measured, for example, by gel permeation chromatography (GPC) using a standard polystyrene calibration curve under the same conditions as the weight average molecular weight of polyvinylpyrrolidone.
  • GPC gel permeation chromatography
  • the lower limit of the content of the glycerin compound is preferably 0.001% by mass or more, more preferably 0.002% by mass or more, based on the total mass of the abrasive. 005% by mass or more is more preferable, and 0.008% by mass or more is particularly preferable.
  • the upper limit of the content of the glycerin compound is preferably 10% by mass or less, and more preferably 5% by mass or less, based on the total mass of the abrasive, from the viewpoint of suppressing the viscosity of the abrasive from becoming excessively high.
  • the content of the glycerin compound is more preferably 0.001% by mass or more and 10% by mass or less based on the total mass of the abrasive.
  • the lower limit of the content of the second additive (the total of the content of the polyvinyl pyrrolidone and the content of the glycerin compound) is an insulating material.
  • the amount is preferably 0.001% by mass or more, more preferably 0.002% by mass or more, still more preferably 0.005% by mass or more, based on the total mass of the abrasive. A mass% or more is particularly preferred.
  • the upper limit of the content of the second additive is preferably 10% by mass or less, more preferably 5% by mass or less, based on the total mass of the abrasive, from the viewpoint of suppressing the viscosity of the abrasive from becoming excessively high. .
  • the content of the second additive is more preferably 0.001% by mass or more and 10% by mass or less based on the total mass of the abrasive.
  • the abrasive according to the present embodiment includes the first additive and the second additive for the purpose of adjusting polishing characteristics such as polishing rate; abrasive characteristics such as abrasive dispersibility and storage stability. May further contain other different additives.
  • additives include carboxylic acids, amino acids, water-soluble polymers, oxidizing agents (for example, hydrogen peroxide), pH adjusters and buffers described later. These can be used alone or in combination of two or more.
  • the content is 0.0001% by mass or more and 10% by mass based on the total mass of the abrasive from the viewpoint of obtaining the additive effect while suppressing sedimentation of the abrasive grains.
  • the following is preferred.
  • Carboxylic acid has the effect of stabilizing the pH and further improving the polishing rate of the insulating material.
  • the carboxylic acid include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, caproic acid, and lactic acid.
  • An amino acid has an effect of improving dispersibility of abrasive grains (particularly abrasive grains containing a hydroxide of the tetravalent metal element) and further improving the polishing rate of the insulating material.
  • amino acids arginine, lysine, aspartic acid, glutamic acid, asparagine, glutamine, histidine, proline, tyrosine, tryptophan, serine, threonine, glycine, alanine, ⁇ -alanine, methionine, cysteine, phenylalanine, leucine, valine, isoleucine, etc. Can be mentioned.
  • Water-soluble polymers have polishing properties such as flatness, in-plane uniformity, silicon oxide polishing selectivity to silicon nitride (silicon oxide polishing rate / silicon nitride polishing rate), and silicon oxide polishing selectivity to polysilicon. There is an effect to adjust.
  • the “water-soluble polymer” is defined as a polymer that dissolves 0.1 g or more in 100 g of water. The polymer corresponding to the first additive and the second additive is not included in the “water-soluble polymer”.
  • water-soluble polymer examples include polysaccharides such as alginic acid, pectic acid, carboxymethylcellulose, agar, curdlan, dextrin, cyclodextrin, chitosan, chitosan derivatives, pullulan and the like; Vinyl polymers such as polyvinyl alcohol and polyacrolein; Acrylic polymers such as polyacrylamide and polydimethylacrylamide; Amine polymers such as polyallylamine, polyethyleneimine, polydiallylamine; Examples include polyethylene glycol, polyoxypropylene, and polyoxyethylene-polyoxypropylene condensate.
  • the water-soluble polymer may be a derivative thereof.
  • water-soluble polymer having a substituent, other polymer structure and the like.
  • polyallylamine is preferable from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material.
  • a water-soluble polymer can be used individually or in combination of 2 or more types.
  • the weight average molecular weight of the water-soluble polymer is preferably 100 or more, more preferably 300 or more, still more preferably 500 or more, and particularly preferably 1000 or more, from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material.
  • the weight average molecular weight of the water-soluble polymer is preferably 1,000,000 or less, more preferably 700,000 or less, further preferably 500,000 or less, and more preferably 300,000 or less from the viewpoint of further improving the polishing selectivity of the insulating material with respect to the stopper material. Is particularly preferred.
  • the weight average molecular weight of the water-soluble polymer can be measured by the same method as the weight average molecular weight of the second additive.
  • the content of the water-soluble polymer is 0 based on the total mass of the abrasive from the viewpoint of obtaining the effect of adding the water-soluble polymer while suppressing sedimentation of abrasive grains. 0.0001 mass% or more is preferable, 0.00015 mass% or more is more preferable, and 0.0002 mass% or more is still more preferable.
  • the content of the water-soluble polymer is preferably 10% by mass or less, preferably 5% by mass or less based on the total mass of the abrasive from the viewpoint of obtaining the effect of adding the water-soluble polymer while suppressing sedimentation of abrasive grains.
  • the liquid medium in the abrasive according to this embodiment is not particularly limited, but water such as deionized water or ultrapure water is preferable.
  • the content of the liquid medium may be the remainder of the abrasive excluding the content of other components, and is not particularly limited.
  • the pH of the abrasive according to this embodiment mainly affects the polishing rate.
  • the lower limit of the pH is preferably 3.0 or more, more preferably 4.0 or more, still more preferably 4.5 or more, and particularly preferably 5.0 or more.
  • the upper limit of pH is preferably 12.0 or less, more preferably 11.0 or less, and still more preferably 10.0 or less, from the viewpoint of further improving the polishing rate of the insulating material.
  • the pH of the abrasive is preferably 3.0 or more and 12.0 or less from the viewpoint of excellent storage stability of the abrasive and further improving the polishing rate of the insulating material.
  • the pH is defined as the pH at a liquid temperature of 25 ° C.
  • the pH of the polishing agent can be adjusted by a pH adjusting agent such as an acid component such as an inorganic acid or an organic acid; an alkali component such as ammonia, sodium hydroxide, tetramethylammonium hydroxide (TMAH), or imidazole.
  • a buffering agent may be used and a buffer solution (liquid containing a buffering agent) may be used as a buffering agent. Examples of such a buffer include acetate buffer and phthalate buffer.
  • the pH of the abrasive according to this embodiment can be measured with a pH meter (for example, model number PHL-40 manufactured by Electrochemical Instrument Co., Ltd.). Specifically, for example, after calibrating two pH meters using a phthalate pH buffer solution (pH 4.01) and a neutral phosphate pH buffer solution (pH 6.86) as standard buffers, The value is measured after the electrode is placed in an abrasive and stabilized after 2 minutes or more. At this time, the liquid temperature of the standard buffer and the abrasive is both 25 ° C.
  • a pH meter for example, model number PHL-40 manufactured by Electrochemical Instrument Co., Ltd.
  • the abrasive according to the present embodiment may be stored as a one-component abrasive containing at least abrasive grains, a first additive, and a liquid medium. Further, the abrasive according to the present embodiment includes the constituents of the abrasive and the slurry so that the slurry (first liquid) and the additive liquid (second liquid) are mixed to become the abrasive. You may preserve
  • the slurry includes, for example, at least abrasive grains and a liquid medium.
  • the additive liquid includes, for example, at least a first additive and a liquid medium.
  • the additive (first additive, second additive, and other additives) is preferably included in the additive solution.
  • the second additive when the second additive is contained in the additive liquid, it becomes easy to suppress the aggregation of abrasive grains.
  • the constituents of the abrasive may be stored as an abrasive set divided into three or more liquids.
  • the slurry and additive liquid are mixed immediately before or during polishing to produce an abrasive.
  • the one-component abrasive may be stored as an abrasive stock solution in which the content of the liquid medium is reduced, and may be diluted with the liquid medium during polishing.
  • the two-component abrasive set may be stored as a slurry storage solution and an additive storage solution with a reduced content of the liquid medium, and may be diluted with the liquid medium during polishing.
  • the method of supplying the abrasive onto the polishing surface plate is to supply the abrasive directly by feeding; the storage liquid for abrasive and the liquid medium are sent through separate pipes.
  • the polishing rate can be adjusted by arbitrarily changing the mixing ratio of these two components.
  • methods for supplying the abrasive onto the polishing surface plate include the following methods. For example, a method in which slurry and additive liquid are fed through separate pipes, and these pipes are combined, mixed and supplied; a slurry storage liquid, an additive liquid storage liquid, and a liquid medium are fed through separate pipes.
  • a method in which these are merged and mixed and supplied; a method in which slurry and additive liquid are mixed in advance; a method in which slurry storage liquid, storage liquid for additive liquid, and liquid medium are mixed and supplied in advance Can do.
  • polishing agent set on a polishing surface plate, respectively can also be used.
  • the surface to be polished is polished using an abrasive obtained by mixing the slurry and the additive liquid on the polishing platen.
  • the abrasive set according to the present embodiment may be divided into an abrasive containing at least the essential components and an additive liquid containing at least an optional component such as an oxidizing agent (for example, hydrogen peroxide). .
  • polishing is performed using a mixed liquid obtained by mixing the abrasive and the additive liquid (the mixed liquid also corresponds to “abrasive”).
  • the abrasive set according to the present embodiment is an abrasive set divided into three or more liquids, a liquid containing at least a part of the essential components, a liquid containing at least the remainder of the essential components, and an optional component.
  • the mode may be divided into the additive solution containing at least.
  • Each liquid constituting the abrasive set may be stored as a storage liquid in which the content of the liquid medium is reduced.
  • the substrate polishing method may include a polishing step of polishing the surface to be polished of the substrate using the abrasive.
  • the abrasive is supplied between the material to be polished and the polishing pad in a state where the material to be polished of the substrate having the material to be polished is pressed against the polishing pad (polishing cloth) of the polishing surface plate.
  • the substrate and the polishing surface plate are moved relatively to polish the material to be polished.
  • at least a part of the material to be polished is removed by polishing.
  • the substrate polishing method may include a polishing step of polishing the surface to be polished of the substrate using an abrasive obtained by mixing the slurry and additive liquid in the abrasive set.
  • the method for polishing the substrate may further include a step of obtaining an abrasive by mixing the slurry and the additive liquid before the polishing step.
  • the slurry and the additive liquid in the abrasive set are supplied between the material to be polished and the polishing pad, and the polishing agent obtained by mixing the slurry and the additive liquid is used.
  • the surface to be polished may be polished.
  • Examples of the substrate to be polished include a substrate.
  • a material to be polished is formed on a substrate for manufacturing a semiconductor element (for example, a semiconductor substrate on which an STI pattern, a gate pattern, a wiring pattern, etc. are formed).
  • a substrate is mentioned.
  • materials to be polished include insulating materials such as silicon oxide; stopper materials such as polysilicon and silicon nitride.
  • the shape of the material to be polished is not particularly limited, but for example, is a film shape (film to be polished).
  • the film to be polished may be a single film or a plurality of films. When a plurality of films are exposed on the surface to be polished, they can be regarded as films to be polished.
  • the material to be polished (such as an insulating material such as silicon oxide) formed on such a substrate is polished with the above-described abrasive and the excess portion is removed, so that the unevenness of the surface of the material to be polished is eliminated and the material to be polished is removed. It can be a smooth surface over the entire surface of the abrasive material.
  • the abrasive according to this embodiment is preferably used for polishing a surface to be polished containing silicon oxide.
  • insulation in a base body having an insulating film for example, a silicon oxide film
  • the film can be polished.
  • the stopper film is, for example, a film having a lower polishing rate than the insulating film, and is preferably a polysilicon film, a silicon nitride film, or the like.
  • a CVD method represented by a low pressure CVD method, a quasi-atmospheric pressure CVD method, a plasma CVD method, etc .; a liquid material is applied to a rotating substrate
  • a spin coating method examples include a spin coating method.
  • the silicon oxide film can be obtained, for example, by thermally reacting monosilane (SiH 4 ) and oxygen (O 2 ) using a low pressure CVD method.
  • the silicon oxide film can be obtained by, for example, thermally reacting tetraethoxysilane (Si (OC 2 H 5 ) 4 ) and ozone (O 3 ) using a quasi-atmospheric pressure CVD method.
  • a silicon oxide film can be similarly obtained by causing plasma reaction between tetraethoxysilane and oxygen.
  • the silicon oxide film is obtained by applying a liquid raw material containing, for example, inorganic polysilazane, inorganic siloxane, etc. on a substrate using a spin coating method and performing a thermosetting reaction in a furnace body or the like.
  • Examples of the method for forming a polysilicon film include a low pressure CVD method in which monosilane is thermally reacted, a plasma CVD method in which monosilane is subjected to plasma reaction, and the like.
  • heat treatment may be performed at a temperature of 200 to 1000 ° C. as necessary.
  • the silicon oxide film obtained by the above method may contain a small amount of boron (B), phosphorus (P), carbon (C), or the like in order to improve embedding properties.
  • polishing method As a polishing apparatus, a general polishing apparatus having a holder capable of holding a substrate such as a semiconductor substrate having a surface to be polished and a polishing surface plate to which a polishing pad can be attached. Can be used. Each of the holder and the polishing surface plate is provided with a motor capable of changing the number of rotations. As a polishing apparatus, APPLIED MATERIALS polishing apparatus: Reflexion or the like can be used.
  • polishing pad a general nonwoven fabric, foam, non-foam, or the like can be used.
  • material of the polishing pad polyurethane, acrylic, polyester, acrylic-ester copolymer, polytetrafluoroethylene, polypropylene, polyethylene, poly-4-methylpentene, cellulose, cellulose ester, polyamide (for example, nylon (trade name), Aramid), polyimide, polyimide amide, polysiloxane copolymer, oxirane compound, phenol resin, polystyrene, polycarbonate, epoxy resin and the like can be used.
  • foamed polyurethane and non-foamed polyurethane are particularly preferable from the viewpoint of easily obtaining an excellent polishing rate and flatness. It is preferable that the polishing pad is grooved so as to collect the abrasive.
  • the polishing conditions are not limited, but the rotation speed of the surface plate is preferably 200 min ⁇ 1 or less so that the semiconductor substrate does not pop out, and the polishing pressure (processing load) applied to the semiconductor substrate is sufficient to cause polishing flaws. 100 kPa or less is preferable from the viewpoint of suppressing the above.
  • the polishing agent it is preferable to continuously supply the polishing agent to the polishing pad with a pump or the like. Although there is no restriction
  • the semiconductor substrate after polishing is thoroughly washed in running water to remove particles adhering to the substrate.
  • dilute hydrofluoric acid or ammonia water may be used in addition to pure water, and a brush may be used in combination to increase cleaning efficiency.
  • a spin dryer or the like it is preferable to dry the semiconductor substrate after removing water droplets adhering to the semiconductor substrate using a spin dryer or the like.
  • the abrasive, the abrasive set and the polishing method according to this embodiment can be suitably used for forming STI.
  • the polishing rate ratio of the insulating material (for example, silicon oxide) to the stopper material (for example, polysilicon) is 30 or more.
  • the polishing rate ratio is less than 30, the polishing rate of the insulating material relative to the polishing rate of the stopper material is small, and it tends to be difficult to stop polishing at a predetermined position when forming the STI.
  • the polishing rate ratio is 30 or more, it is easy to stop polishing, which is more suitable for formation of STI.
  • the abrasive, the abrasive set and the polishing method according to this embodiment can also be used for polishing the premetal insulating film.
  • a constituent material of the premetal insulating film for example, phosphorus-silicate glass or boron-phosphorus-silicate glass is used in addition to silicon oxide, and silicon oxyfluoride, fluorinated amorphous carbon, or the like can also be used.
  • the polishing agent, the polishing agent set, and the polishing method according to this embodiment can be applied to a film other than an insulating film such as a silicon oxide film.
  • insulating film such as a silicon oxide film.
  • films include high dielectric constant films such as Hf-based, Ti-based, and Ta-based oxides; semiconductor films such as silicon, amorphous silicon, SiC, SiGe, Ge, GaN, GaP, GaAs, and organic semiconductors; GeSbTe Phase change film; inorganic conductive film such as ITO; polymer resin film such as polyimide, polybenzoxazole, acrylic, epoxy, and phenol.
  • the polishing agent, the polishing agent set, and the polishing method according to the present embodiment are not only film-like objects to be polished, but also various types composed of glass, silicon, SiC, SiGe, Ge, GaN, GaP, GaAs, sapphire, plastic, and the like. It can also be applied to substrates.
  • the polishing agent, the polishing agent set, and the polishing method according to the present embodiment are not only for manufacturing semiconductor elements, but also for image display devices such as TFTs and organic ELs; optical parts such as photomasks, lenses, prisms, optical fibers, and single crystal scintillators Optical elements such as optical switching elements and optical waveguides; light emitting elements such as solid-state lasers and blue laser LEDs; and production of magnetic storage devices such as magnetic disks and magnetic heads.
  • the obtained precipitate containing cerium hydroxide was centrifuged (4000 min ⁇ 1 , 5 minutes), and then the liquid phase was removed by decantation to perform solid-liquid separation. Further, 10 g of the obtained particles and 990 g of water were mixed, and the particles were dispersed in water using an ultrasonic cleaning machine to prepare a slurry storage liquid (particle content: 1.0 mass%).
  • the measuring method is as follows. First, about 1 mL of a measurement sample containing 1.0% by mass of particles was placed in a 1 cm square cell, and the cell was placed in the Zetasizer 3000HSA. The refractive index of the measurement sample was adjusted to 1.33, the viscosity of the measurement sample was adjusted to 0.887 mPa ⁇ s, the measurement was performed at 25 ° C., and the value displayed as Z-average Size was read.
  • a measurement sample (aqueous dispersion).
  • About 4 mL of the measurement sample was placed in a 1 cm square cell, and the cell was installed in a spectrophotometer (device name: U3310) manufactured by Hitachi, Ltd.
  • Absorbance was measured in the wavelength range of 200 to 600 nm, and the absorbance with respect to light with a wavelength of 290 nm and the absorbance with respect to light with a wavelength of 450 to 600 nm were measured.
  • the absorbance for light with a wavelength of 290 nm was 1.192, and the absorbance for light with a wavelength of 450 to 600 nm was less than 0.010.
  • the polishing slurry for CMP used in Examples 1 to 16 and Comparative Examples 1 to 3 is 0.05% by weight of particles (abrasive grains) containing the cerium hydroxide, based on the total weight of the polishing slurry for CMP.
  • B) EOPO adduct shown in 1 is 0 to 0.5% by mass
  • C) polyvinylpyrrolidone is 0 to 0.3% by mass
  • D) glycerin compound is 0 to 0.1% by mass
  • pH adjusting agent The imidazole was prepared so as to contain 0.005% by mass and the balance containing pure water.
  • slurry stock solution water was added to the slurry stock solution and diluted 5 to 10 times to obtain a slurry containing particles containing cerium hydroxide as abrasive grains.
  • components other than abrasive grains were dissolved in pure water to obtain an additive solution.
  • the slurry and the additive solution were mixed and stirred to prepare an abrasive for CMP.
  • PH Measurement temperature: 25 ⁇ 5 ° C
  • Measuring device manufactured by Electrochemical Instrument Co., Ltd., model number PHL-40 Measurement method: After calibrating two points using a standard buffer (phthalate pH buffer, pH: 4.01 (25 ° C.); neutral phosphate pH buffer, pH 6.86 (25 ° C.)), The electrode was placed in a CMP abrasive and the pH after the passage of 2 minutes or more and stabilized was measured with the measuring device.
  • a standard buffer phthalate pH buffer, pH: 4.01 (25 ° C.); neutral phosphate pH buffer, pH 6.86 (25 ° C.)
  • the average particle size (Z-average Size) of the abrasive grains in the CMP abrasive was measured using a product name Zeta Sizer 3000HSA manufactured by Malvern Instruments. The measuring method is as follows. First, about 1 mL of the polishing slurry for CMP was placed in a 1 cm square cell, and the cell was placed in the Zetasizer 3000HSA. The refractive index of the measurement sample was adjusted to 1.33, the viscosity of the measurement sample was adjusted to 0.887 mPa ⁇ s, the measurement was performed at 25 ° C., and the value displayed as Z-average Size was read. The average particle size of the abrasive grains was 25 nm in any of the polishing abrasives for CMP of Examples 1 to 16 and Comparative Examples 1 to 3.
  • Polishing equipment Reflexion (manufactured by APPLIED MATERIALS) Polishing agent flow rate for CMP: 200 mL / min
  • Substrate to be polished (a) A substrate in which a silicon oxide film having a thickness of 1000 nm is formed on a silicon substrate by a plasma CVD method, and (b) a polysilicon film having a thickness of 150 nm on a silicon substrate. (C) A substrate in which a silicon nitride film having a thickness of 500 nm is formed on a silicon substrate.
  • Polishing pad Expanded polyurethane resin with closed cells (Rohm and Haas Japan, model number IC1000) Polishing pressure: 14.7 kPa (2 psi) Relative speed between substrate and polishing platen: 85 m / min Polishing time: 1 minute Cleaning: After CMP treatment, cleaning with ultrasonic water was performed and then drying with a spin dryer.
  • Tables 1 and 2 show the pH of the polishing slurry for CMP, the polishing rate of the silicon oxide film (SiO 2 RR), the polishing rate of the polysilicon film (p-SiRR), the polishing rate of the silicon nitride film (SiNRR), and the like. Show.
  • the number of polishing scratches of 0.2 ⁇ m or more on the surface of the film to be polished was In all of Examples 1 to 16 and Comparative Examples 1 to 3, the number was about 0 to 3 (pieces / wafer), and the occurrence of polishing flaws was sufficiently suppressed.
  • each compound described in Table 1 is as follows.
  • diglycerin polyether polyoxyethylene diglyceryl ether
  • weight average molecular weight 2000 SC-P1000: manufactured by Sakamoto Yakuhin Kogyo Co., Ltd.
  • diglycerin polyether polyoxypropylene diglyceryl ether, weight average molecular weight: 1000 # 310-EO60: Sakamoto Yakuhin Kogyo Co., Ltd., polyoxyethylene polyglyceryl ether, polyglycerin skeleton average degree of polymerization: 4, weight average molecular weight: 3000
  • Example 1 0.5 mass% of TR-304 was used in the production of the CMP abrasive.
  • the polishing selectivity of the insulating material with respect to the polysilicon of Example 1 was 35, which was higher than Comparative Examples 1 to 3.
  • Example 2 0.5% by mass of TR-702 was used in the production of the CMP abrasive.
  • the polishing selectivity of the insulating material with respect to the polysilicon of Example 2 was 32, which was higher than Comparative Examples 1 to 3.
  • Example 3 0.5 mass% of TR-704 was used in the production of the polishing slurry for CMP.
  • the polishing selectivity of the insulating material with respect to the polysilicon of Example 3 was 40, which was higher than those of Comparative Examples 1 to 3.
  • Example 4 0.5 mass% of TR-913R was used in the production of the polishing slurry for CMP.
  • the polishing selectivity of the insulating material with respect to the polysilicon of Example 4 was 53, which was higher than those of Comparative Examples 1 to 3.
  • Example 5 0.5% by mass of TR-704 and 0.1% by mass of PVP K30 were used in the production of the polishing slurry for CMP.
  • the polishing selectivity of the insulating material with respect to the polysilicon of Example 5 was 78, which was higher than those of Comparative Examples 1 to 3.
  • Example 6 0.5% by mass of TR-704 and 0.3% by mass of PVP K30 were used in the production of the polishing slurry for CMP.
  • the polishing selectivity of the insulating material with respect to the polysilicon of Example 6 was 70, which was higher than Comparative Examples 1 to 3.
  • Example 7 0.5% by mass of TR-913R and 0.3% by mass of PVP K30 were used in the production of the polishing slurry for CMP.
  • the polishing selectivity of the insulating material with respect to the polysilicon of Example 7 was 63, which was higher than those of Comparative Examples 1 to 3.
  • Example 8 in the production of the polishing slurry for CMP, 0.5% by mass of TR-704 and 0.1% by mass of polyglycerol 20-mer were used.
  • the polishing selectivity of the insulating material with respect to the polysilicon of Example 8 was 84, which was higher than those of Comparative Examples 1 to 3.
  • Example 9 0.5 mass% TR-704, 0.3 mass% PVP K30, and 0.01 mass% polyglycerin tetramer were used in the production of the polishing slurry for CMP.
  • the polishing selectivity of the insulating material with respect to the polysilicon of Example 9 was 171 and was higher than those of Comparative Examples 1 to 3.
  • Example 10 0.5 mass% TR-704, 0.3 mass% PVP K30, and 0.01 mass% polyglycerin 10-mer were used in the production of the polishing slurry for CMP.
  • the polishing selectivity of the insulating material with respect to the polysilicon of Example 10 was 222, which was higher than those of Comparative Examples 1 to 3.
  • Example 11 0.5 mass% TR-704, 0.3 mass% PVP K30, and 0.01 mass% polyglycerin 20-mer were used in the production of the polishing slurry for CMP.
  • the polishing selectivity of the insulating material with respect to the polysilicon of Example 11 was 250, which was higher than those of Comparative Examples 1 to 3.
  • the polishing selectivity of the insulating material with respect to silicon nitride of Example 11 was 9, which was higher than that of Comparative Example 1.
  • Example 12 0.5% by mass of TR-704, 0.3% by mass of PVP K15, and 0.01% by mass of polyglycerin 20-mer were used in the production of the polishing slurry for CMP.
  • the polishing selectivity of the insulating material with respect to the polysilicon of Example 12 was 262, which was higher than those of Comparative Examples 1 to 3.
  • Example 13 0.5-mass TR-704, 0.3-mass PVP K90, and 0.01-mass polyglycerin 20-mer were used in the production of the polishing slurry for CMP.
  • the polishing selectivity of the insulating material with respect to the polysilicon of Example 13 was 194, which was higher than those of Comparative Examples 1 to 3.
  • Example 14 in the preparation of the polishing slurry for CMP, 0.5% by mass of TR-913R, 0.3% by mass of PVP K30, and 0.1% by mass of SC-E2000 were used.
  • the polishing selectivity of the insulating material with respect to the polysilicon of Example 14 was 85, which was higher than those of Comparative Examples 1 to 3.
  • Example 15 0.5% by mass of TR-913R, 0.3% by mass of PVP K30, and 0.1% by mass of SC-P1000 were used in the production of the polishing slurry for CMP.
  • the polishing selectivity of the insulating material with respect to the polysilicon of Example 15 was 95, which was higher than those of Comparative Examples 1 to 3.
  • Example 16 0.5-mass TR-913R, 0.3-mass PVP K30, and 0.1-mass # 310-EO60 were used in the production of the CMP abrasive.
  • the polishing selectivity of the insulating material with respect to the polysilicon of Example 16 was 64, which was higher than those of Comparative Examples 1 to 3.
  • the present invention it is possible to provide a polishing agent, a polishing agent set, and a substrate polishing method capable of improving the polishing selectivity of the insulating material with respect to the stopper material. Further, according to the present invention, in the CMP technology for flattening the shallow trench isolation insulating material, the premetal insulating material, the interlayer insulating material, etc., it is possible to polish the insulating material at a high speed and obtain a highly flat surface. According to the present invention, the insulating material can be polished at high speed, and the insulating material can be polished with low polishing scratches.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

La présente invention concerne un agent de polissage qui contient : des grains abrasifs qui contiennent un hydroxyde d'un élément métal tétravalent ; un composé qui est obtenu en ajoutant de l'oxyéthylène et/ou de l'oxypropylène à de l'éthylène diamine ; et un milieu liquide.
PCT/JP2013/071002 2012-08-30 2013-08-02 Agent de polissage, ensemble d'agent de polissage et procédé pour base de polissage Ceased WO2014034379A1 (fr)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5890583B2 (ja) * 2013-02-21 2016-03-22 株式会社フジミインコーポレーテッド 研磨用組成物および研磨物製造方法
JP2018506176A (ja) * 2014-12-16 2018-03-01 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ゲルマニウムを含む基板の高効率研磨のための化学機械研磨（ｃｍｐ）組成物
JP2019186346A (ja) * 2018-04-06 2019-10-24 花王株式会社 シリコンウェーハの製造方法
CN111500196A (zh) * 2019-01-30 2020-08-07 株式会社大赛璐 半导体晶片表面保护剂
JPWO2020196199A1 (fr) * 2019-03-22 2020-10-01
CN111748284A (zh) * 2019-03-27 2020-10-09 福吉米株式会社 研磨用组合物
WO2024161603A1 (fr) * 2023-02-02 2024-08-08 株式会社レゾナック Liquide de polissage, ensemble de liquide de polissage, procédé de polissage, procédé de production de composant et procédé de production de composant semi-conducteur
KR20250030536A (ko) * 2016-12-28 2025-03-05 니타 듀퐁 가부시키가이샤 연마용 조성물

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JP6360694B2 (ja) * 2014-03-14 2018-07-18 ニッタ・ハース株式会社 研磨用組成物
JP6678076B2 (ja) * 2016-06-30 2020-04-08 花王株式会社 シリコンウェーハ用研磨液組成物
JP6720791B2 (ja) * 2016-09-13 2020-07-08 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
JP7074525B2 (ja) * 2017-03-30 2022-05-24 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
US10822524B2 (en) * 2017-12-14 2020-11-03 Rohm And Haas Electronic Materials Cmp Holdings, I Aqueous compositions of low dishing silica particles for polysilicon polishing
WO2019116833A1 (fr) * 2017-12-15 2019-06-20 株式会社フジミインコーポレーテッド Composition de polissage et procédé de polissage
TWI821407B (zh) * 2018-09-28 2023-11-11 日商福吉米股份有限公司 研磨用組合物、研磨方法及基板之製造方法
US12152167B2 (en) 2019-03-22 2024-11-26 Daicel Corporation Polishing composition for semiconductor wiring
JP2020109864A (ja) * 2020-03-16 2020-07-16 花王株式会社 シリコンウェーハ用研磨液組成物
WO2022224356A1 (fr) * 2021-04-20 2022-10-27 昭和電工マテリアルズ株式会社 Liquide de polissage, ensemble liquide de polissage et procédé de polissage

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008091524A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
JP2010153782A (ja) * 2008-11-20 2010-07-08 Hitachi Chem Co Ltd 基板の研磨方法
JP2011501406A (ja) * 2007-10-10 2011-01-06 チェイル インダストリーズ インコーポレイテッド 金属ｃｍｐスラリー組成物及びこれを用いる研磨方法
JP2011159998A (ja) * 2003-09-11 2011-08-18 Cabot Microelectronics Corp 化学的機械的研磨組成物
WO2012102187A1 (fr) * 2011-01-25 2012-08-02 日立化成工業株式会社 Fluide de polissage chimico-mécanique, procédé de fabrication de ce dernier, procédé de fabrication d'une particule composite et procédé permettant de polir un matériau de base
WO2012105651A1 (fr) * 2011-02-03 2012-08-09 ニッタ・ハース株式会社 Composition de polissage et procédé de polissage l'utilisant
JP2012169510A (ja) * 2011-02-16 2012-09-06 Nitta Haas Inc 研磨組成物
WO2013125445A1 (fr) * 2012-02-21 2013-08-29 日立化成株式会社 Abrasif, ensemble abrasif et procédé d'abrasion d'un substrat
WO2013125441A1 (fr) * 2012-02-21 2013-08-29 日立化成株式会社 Abrasif, ensemble abrasif, et procédé d'abrasion de substrat

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011159998A (ja) * 2003-09-11 2011-08-18 Cabot Microelectronics Corp 化学的機械的研磨組成物
JP2008091524A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
JP2011501406A (ja) * 2007-10-10 2011-01-06 チェイル インダストリーズ インコーポレイテッド 金属ｃｍｐスラリー組成物及びこれを用いる研磨方法
JP2010153782A (ja) * 2008-11-20 2010-07-08 Hitachi Chem Co Ltd 基板の研磨方法
WO2012102187A1 (fr) * 2011-01-25 2012-08-02 日立化成工業株式会社 Fluide de polissage chimico-mécanique, procédé de fabrication de ce dernier, procédé de fabrication d'une particule composite et procédé permettant de polir un matériau de base
WO2012105651A1 (fr) * 2011-02-03 2012-08-09 ニッタ・ハース株式会社 Composition de polissage et procédé de polissage l'utilisant
JP2012169510A (ja) * 2011-02-16 2012-09-06 Nitta Haas Inc 研磨組成物
WO2013125445A1 (fr) * 2012-02-21 2013-08-29 日立化成株式会社 Abrasif, ensemble abrasif et procédé d'abrasion d'un substrat
WO2013125441A1 (fr) * 2012-02-21 2013-08-29 日立化成株式会社 Abrasif, ensemble abrasif, et procédé d'abrasion de substrat

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9566685B2 (en) 2013-02-21 2017-02-14 Fujimi Incorporated Polishing composition and method for producing polished article
JP5890583B2 (ja) * 2013-02-21 2016-03-22 株式会社フジミインコーポレーテッド 研磨用組成物および研磨物製造方法
KR20240141863A (ko) * 2014-12-16 2024-09-27 바스프 에스이 게르마늄을 포함하는 기판의 높은 효과적 연마를 위한 화학 기계적 연마 (cmp) 조성물
JP2018506176A (ja) * 2014-12-16 2018-03-01 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ゲルマニウムを含む基板の高効率研磨のための化学機械研磨（ｃｍｐ）組成物
KR102892429B1 (ko) 2014-12-16 2025-11-27 바스프 에스이 게르마늄을 포함하는 기판의 높은 효과적 연마를 위한 화학 기계적 연마 (cmp) 조성물
KR102825101B1 (ko) 2016-12-28 2025-06-26 니타 듀퐁 가부시키가이샤 연마용 조성물
KR20250030536A (ko) * 2016-12-28 2025-03-05 니타 듀퐁 가부시키가이샤 연마용 조성물
JP2019186346A (ja) * 2018-04-06 2019-10-24 花王株式会社 シリコンウェーハの製造方法
JP7105089B2 (ja) 2018-04-06 2022-07-22 花王株式会社 シリコンウェーハの製造方法
CN111500196A (zh) * 2019-01-30 2020-08-07 株式会社大赛璐 半导体晶片表面保护剂
CN111500196B (zh) * 2019-01-30 2023-07-07 株式会社大赛璐 半导体晶片表面保护剂
US11542406B2 (en) 2019-01-30 2023-01-03 Daicel Corporation Surface protectant for semiconductor wafer
JP7712768B2 (ja) 2019-03-22 2025-07-24 株式会社ダイセル 半導体ウエハ表面の親水化処理液
JPWO2020196199A1 (fr) * 2019-03-22 2020-10-01
CN111748284B (zh) * 2019-03-27 2023-01-06 福吉米株式会社 研磨用组合物
CN111748284A (zh) * 2019-03-27 2020-10-09 福吉米株式会社 研磨用组合物
WO2024161603A1 (fr) * 2023-02-02 2024-08-08 株式会社レゾナック Liquide de polissage, ensemble de liquide de polissage, procédé de polissage, procédé de production de composant et procédé de production de composant semi-conducteur

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