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WO2014010979A1 - Appareil de traitement par plasma avec électrode de décharge de surface à compression de champ électrique - Google Patents

Appareil de traitement par plasma avec électrode de décharge de surface à compression de champ électrique Download PDF

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Publication number
WO2014010979A1
WO2014010979A1 PCT/KR2013/006233 KR2013006233W WO2014010979A1 WO 2014010979 A1 WO2014010979 A1 WO 2014010979A1 KR 2013006233 W KR2013006233 W KR 2013006233W WO 2014010979 A1 WO2014010979 A1 WO 2014010979A1
Authority
WO
WIPO (PCT)
Prior art keywords
discharge
discharge electrode
unit
cooling
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2013/006233
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English (en)
Korean (ko)
Inventor
서용운
김번중
서춘성
최동규
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GIT Co Ltd
Original Assignee
GIT Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020130002854A external-priority patent/KR20140009910A/ko
Application filed by GIT Co Ltd filed Critical GIT Co Ltd
Publication of WO2014010979A1 publication Critical patent/WO2014010979A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/4697—Generating plasma using glow discharges

Definitions

  • the present invention relates to a device for treating the surface of a structure of a variety of planar state including a polymer such as metal or plastic, more specifically, a planar state made of a variety of materials using a plasma containing ions, electrons, radicals A device for treating a surface of a structure.
  • the outermost electrons of the gas molecules are released and the gas molecules are divided into positively charged ions and free electrons.
  • the positively charged ions and free electrons are collected at a predetermined density or more, and a gas state composed of neutral particles including ions, electrons, and radicals, which are generally neutral and highly reactive, is called plasma.
  • the energy of the plasma may be transferred to the surface of the material with which the plasma is contacted or collided.
  • the plasma may be applied to cleaning or surface treatment.
  • the plasma processing apparatus may include a chamber that provides a space for plasma discharge, and a plurality of discharge electrodes that are provided in the chamber and generate plasma discharge.
  • the plasma treated electrode size becomes larger and needs to be processed in a limited electrode space. At this time, it is very difficult to maintain and control a stable plasma discharge.
  • the conventional plasma processing apparatus has a problem that the substrate to be processed is damaged due to an abnormal discharge such as an arc discharge by high energy ions and electrons on the substrate.
  • An object of the present invention is to provide an electrode structure and apparatus for plasma treatment, in which water quality is improved.
  • the present invention provides a plasma processing electrode structure and apparatus capable of stacking and mass processing a large-area to-be-processed substrate through stable plasma discharge by compressed surface discharge characteristics in a limited space.
  • a chamber, a plurality of discharge electrode sets provided in the chamber, a power supply unit for supplying power to the discharge electrode set, and the discharge electrode set are at least one or more first discharge electrodes and at least one having a different polarity from the first discharge electrode
  • a second discharge electrode wherein the first discharge electrode and the second discharge electrode are alternately disposed to be spaced apart in a first direction, and the plurality of discharge electrode sets are mutually disposed in a second direction perpendicular to the first direction.
  • the discharge electrode provided in a position facing each other provides a plasma processing apparatus, characterized in that having the same polarity with each other.
  • the apparatus may further include cooling means for supplying cooling water to the discharge electrode set.
  • the first discharge electrode may include a first discharge unit for discharging and a first cooling unit for cooling
  • the second discharge electrode may include a second discharge unit for discharging and a second cooling unit for cooling.
  • first cooling unit and the second cooling unit have been described as a cooling unit for the convenience of describing the three-dimensional shape of the electrode, it is a matter of course that the center may not include a means for cooling.
  • the first discharge part and the second discharge part may be formed in a plate shape having a length, a width, and a thickness.
  • a plurality of holes may be formed on one side of the first discharge part and the second discharge part.
  • the first cooling unit and the second cooling unit may be formed in the form of a circular pipe or a pipe of polygonal shape.
  • the first cooling unit may be provided in the longitudinal direction inside the first discharge unit, and the second cooling unit may be provided in the longitudinal direction inside the second discharge unit.
  • the first cooling unit may be provided in the longitudinal direction on one side of the first discharge unit, and the second cooling unit may be provided in the longitudinal direction on one side of the second discharge unit.
  • the first discharge part may be provided as a pair of plate electrodes, and the pair of plate electrodes may be provided asymmetrically on both side portions of the first cooling part.
  • the second discharge unit may be provided as a pair of plate electrodes, and the pair of plate electrodes may be provided asymmetrically on both side portions of the second cooling unit.
  • the first discharge unit may be provided as a pair of plate electrodes, and the pair of plate electrodes may be provided asymmetrically on the upper and lower portions of the first cooling unit, respectively.
  • the second discharge unit may be provided as a pair of plate electrodes, and the pair of plate electrodes may be provided asymmetrically on the upper and lower portions of the second cooling unit, respectively.
  • Plasma processing apparatus comprising an electric field compression type surface discharge electrode according to an embodiment of the present invention to suppress the damage of the substrate to be processed by the collision of the charged particles, increase the plasma uniformity of the large-area target substrate to increase the productivity It is possible to prevent damage to the substrate to be processed due to discharge instability due to large area and mass processing.
  • FIG. 1 is a perspective view showing a schematic structure of a plasma processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic plan view of a plasma processing apparatus according to an embodiment of the present invention.
  • FIG. 3 is a view showing the principle of the electric field compression type discharge in the plasma processing apparatus according to an embodiment of the present invention.
  • FIG 4 to 8 are views showing the structure of the discharge electrode of the plasma processing apparatus according to another embodiment of the present invention.
  • FIG. 9 is a view showing a connection structure of the cooling means in the plasma processing apparatus according to an embodiment of the present invention.
  • FIG. 10 is a view showing a connection structure of the discharge electrode in the plasma processing apparatus according to an embodiment of the present invention.
  • the terms “comprise”, “comprise” or “have” are intended to designate that there is a feature, number, step, action, component, part, or combination thereof that is practiced, and that one or the same. It is to be understood that the present invention does not exclude in advance the possibility of the presence or addition of other features, numbers, steps, operations, components, parts, or combinations thereof.
  • FIG. 1 is a perspective view showing a schematic structure of a plasma processing apparatus according to an embodiment of the present invention
  • Figure 2 is a schematic plan view of a plasma processing apparatus according to an embodiment of the present invention.
  • the plasma processing apparatus 100 may include a chamber 100 and a plurality of discharge electrode sets 200 provided in the chamber 100. .
  • FIGS. 1 and 2 four discharge electrode sets 200 are provided in the chamber 100, but the present disclosure is not limited thereto, and at least two discharge electrode sets 200 may be provided in the chamber 100. ) May be provided.
  • the chamber 100 is illustrated in a hexahedral structure in FIG. 1, the chamber 100 is not necessarily limited thereto.
  • the shape of the chamber 100 may be modified according to the shape of the plasma target object 500.
  • a discharge space in which the plasma processing substrate 500 may be disposed may be provided between the plurality of discharge electrode sets 200.
  • FIG. 1 illustrates the substrate 500 for convenience of description, the substrate 500 is not a component of the present invention.
  • Each discharge electrode set 200 includes at least one first discharge electrode 210 for inducing plasma and at least one second discharge electrode 220 having a different polarity than the first electrode 210. can do.
  • the first discharge electrode 210 and the second discharge electrode 220 provided in the discharge electrode set 200 may be disposed to be spaced apart in a first direction, and the first discharge electrodes spaced apart in the first direction.
  • the distance between the 210 and the second discharge electrodes 220 is referred to as d1.
  • the plurality of discharge electrode sets 200 may be spaced apart in a second direction perpendicular to the first direction, and a distance between the discharge electrode sets 200 spaced in the second direction is referred to as d2. .
  • the first discharge electrode 210 and the second discharge electrode 220 may be alternately arranged.
  • the discharge electrodes disposed on the surfaces of the discharge electrode set 200 that face each other may be provided as discharge electrodes having the same polarity, and a pair of discharge electrodes disposed on the opposite surfaces in the second direction will be described below.
  • the discharge electrode is called the counter electrode.
  • the chamber 100 includes a jig 130 for fixing the plasma processing substrate 500, a gas injection unit 140 for injecting an inert gas required for a plasma process into the chamber 100, and a plasma. After the treatment may further include a gas discharge unit 150 for discharging the residue to the outside.
  • the gas injection unit 140 and the gas discharge unit 150 are components for injecting or discharging a reactive gas (oxygen, etc.) and an inert gas (argon, etc.) into the chamber 100 to control the flow rate. It may be configured as a mass flow controller (MFC) or a valve for.
  • MFC mass flow controller
  • FIG. 3 is a view showing the principle of the electric field compression type discharge in the plasma processing apparatus according to an embodiment of the present invention.
  • FIG. 3 two discharge electrode sets 200, a substrate 500 provided between the discharge electrode sets 200, and a first discharge constituting the discharge electrode sets 200 are described in order to describe electric field compression discharges.
  • the plasma generated from the electrode 210 and the second discharge electrode 220 is shown schematically.
  • the region where the plasma is compressed is called a compressed electric field region 10.
  • the compressed electric field region 10 may have a higher density of plasma than the region 20 in which the compressed electric field 10 is not formed. Since the electric field generating the plasma is compressed and does not penetrate the substrate 500, damage of the substrate 500 due to charged particles can be greatly reduced.
  • Density uniformity of active radicals applied to the substrate 500 is determined by a distance d1 between the first discharge electrode 210 and the second discharge electrode 220 and a distance d2 between the discharge electrode set 200. Can be determined.
  • the distance d1 between the first discharge electrode 210 and the second discharge electrode 220 may have a value smaller than the distance d2 between the discharge electrode set 200.
  • the distance d1 between the first discharge electrode 210 and the second discharge electrode 220 may be formed to be greater than or equal to a distance required for electrical isolation, and the distance d2 between the discharge electrode sets 200 may be equal to or greater than that of the d1. Depending on the distance, it may be spaced apart by a distance to ensure a minimum uniformity.
  • FIG 4 to 8 are views showing the structure of the discharge electrode set 200 of the plasma processing apparatus according to an embodiment of the present invention.
  • Discharge electrode set 200 may include at least one or more first discharge electrode 210 and at least one or more second discharge electrode 220, each one for convenience of description below It will be described on the premise that the discharge electrode set 200 including the first discharge electrode 210 and the second discharge electrode 220.
  • each of the first discharge electrode 210 and the second discharge electrode 220 may include a discharge unit in which plasma discharge occurs.
  • the first discharge electrode 210 and the second discharge electrode 220 includes a discharge unit for generating a plasma discharge and a cooling unit through which a cooling water for cooling the discharge unit can flow. Can be.
  • the discharge electrode includes the discharge unit and the cooling unit.
  • the first discharge electrode 210 may include a first discharge unit 211 for plasma discharge and a first cooling unit 212 for cooling the first discharge unit 211, and likewise, the second discharge unit 211.
  • the discharge electrode 220 may include a second discharge unit 221 for plasma discharge and a second cooling unit 222 for cooling the second discharge unit 221.
  • the first discharge unit 211 and the second discharge unit 221 may be provided in the form of a plate having a predetermined length (L), width (W) and thickness (D).
  • a plurality of porous holes may be provided on one side of the first discharge part 211 and the second discharge part 221.
  • the first cooling unit 212 and the second cooling unit 222 may be provided in the form of a pipe (pipe) having a space through which the coolant flows. 4 to 8, the first cooling unit 212 and the second cooling unit 222 are illustrated as being rectangular pipes, but are not necessarily limited thereto, and may be provided as circular pipes or polygonal pipes. have.
  • the discharge electrode set 200 may include a first discharge part 211 and a second discharge part 221 having a plate shape.
  • the first cooling unit 212 and the second cooling unit 222 may be provided in the length (L) direction of the first discharge unit 211 and the second discharge unit 221, respectively.
  • the discharge electrode set 200 may include a first discharge part 211 and a second discharge part 221 having a plate shape.
  • the first cooling unit 212 and the second cooling unit 222 may be provided at one side of the plate-shaped first discharge unit 211 and the second discharge unit 221 in the length L direction, respectively. have.
  • the width W of the first discharge unit 211 may have a larger value than the width of the first cooling unit 212
  • the width W of the second discharge unit 221 may be defined as the width of the first discharge unit 211. 2 may have a larger value than the width of the cooling unit 222.
  • the discharge electrode set 200 may include a first cooling unit 212 and a second cooling unit 222 in the form of a square pipe.
  • a pair of first discharge units 211 may be provided at both side surfaces of the first cooling unit 212 in the length L direction, respectively.
  • Both side surfaces of the second cooling unit 222 may be provided with a pair of second discharge units 221 respectively provided in the length L direction.
  • the width W of the pair of first discharge units 211 provided on both side surfaces of the first cooling unit 212 may have a larger value than the width of the first cooling unit 212.
  • the width W of the pair of second discharge units 221 provided on both side surfaces of the second cooling unit 222 may have a larger value than the width of the second cooling unit 222.
  • first discharge units 211 provided on both side surfaces of the first cooling unit 212 may be provided asymmetrically to each other in the width (W) direction
  • the pair of second discharge parts 221 provided on both side surfaces may be provided asymmetrically with respect to the width (W) direction.
  • the discharge electrode set 200 may include a first cooling unit 212 and a second cooling unit 222 in the form of a square pipe.
  • the upper and lower portions of the first cooling unit 212 may be provided with a pair of first discharge units 211 provided in the length L direction, respectively.
  • the upper and lower portions of the second cooling unit 222 may be provided with a pair of second discharge units 221 respectively provided in the length L direction.
  • a pair of first discharge parts 211 respectively provided on the upper and lower portions of the first cooling part 212 may be disposed at the center of the first cooling part 212 in the thickness D direction.
  • the pair of second discharge parts 221 respectively provided on the upper and lower portions of the second cooling part 222 may be provided at the center of the second cooling part 222 in the thickness (D) direction. Can be.
  • the pair of first discharge units 211 respectively provided on the upper and lower portions of the first cooling unit 212 may be provided asymmetrically with respect to the thickness D direction.
  • the pair of second discharge parts 221 provided on the upper and lower portions of the second cooling unit 222 may be provided asymmetrically to each other in the thickness (D) direction.
  • FIG. 9 is a view showing a connection structure of the cooling means in the plasma processing apparatus according to an embodiment of the present invention.
  • the cooling means 300 may be configured as a general cooling means composed of a cooler 310, a circulation pump 320, and the like for cooling the cooling water.
  • the cooler 310 serves to cool the cooling water circulated through the cooling line again, and the circulation pump 320 may serve to move the cooling water on the cooling line.
  • Cooling water supplied into the chamber 100 through the cooling means 300 may be supplied to the first discharge electrode 210 and the second discharge electrode 220 of the plurality of discharge electrode sets 200, respectively.
  • the cooling water supplied to each of the discharge electrode sets 200 may include the first cooling unit 212 and the second cooling unit 222 provided in each of the first discharge electrode 210 and the second discharge electrode 220. ) Can be circulated back to the cooling means.
  • the plurality of first cooling units 212 and the second cooling units 222 may be connected through different cooling water lines, respectively.
  • FIG 10 is a view showing a connection structure of the discharge electrode set 200 and the power supply unit 400 in the plasma processing apparatus according to an embodiment of the present invention.
  • the power supply unit 400 may supply power such as DC power, AC power, or pulse power to the plurality of discharge electrode sets 200.
  • the discharge electrode set 200 may include at least one first discharge electrode 210 and at least one second discharge electrode 220 having a different polarity from the first discharge electrode 210. Power having different polarities may be applied to the first discharge electrode 210 and the second discharge electrode 220.
  • power having the same polarity may be applied to the first discharge unit 211 and the first cooling unit 212 constituting the first discharge electrode 210, and constitute the second discharge electrode 220.
  • a power source having a different polarity than that of the power source applied to the first discharge electrode 210 may be applied to the second discharge unit 221 and the second cooling unit 222.
  • a discharge stable ballast 600 may be provided between each of the discharge electrode sets 200 and the power supply unit 400.
  • One ballast may be provided for each discharge electrode set 200.
  • the discharge ballast may serve to suppress abnormality during plasma discharge so that the discharge is maintained at a stable operating point.
  • the plasma processing apparatus including the field compression type surface discharge electrode of the present invention described above is merely exemplary, and the scope of protection of the present invention is various modifications and equivalents from those skilled in the art. Examples may include.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
PCT/KR2013/006233 2012-07-13 2013-07-12 Appareil de traitement par plasma avec électrode de décharge de surface à compression de champ électrique Ceased WO2014010979A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20120076714 2012-07-13
KR10-2012-0076714 2012-07-13
KR1020130002854A KR20140009910A (ko) 2012-07-13 2013-01-10 전계 압축형 면방전 전극을 포함하는 플라즈마 처리 장치
KR10-2013-0002854 2013-01-10

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Publication Number Publication Date
WO2014010979A1 true WO2014010979A1 (fr) 2014-01-16

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010096568A (ko) * 2000-03-23 2001-11-07 마찌다 가쯔히꼬 박막 형성용 플라즈마 성막 장치
KR100368200B1 (ko) * 1999-07-27 2003-01-24 마츠시다 덴코 가부시키가이샤 플라즈마 생성용 전극, 그 전극을 사용하는 플라즈마 처리장치, 및 그 장치로 플라즈마 처리하는 방법
US20060185594A1 (en) * 2003-07-23 2006-08-24 Tsuyoshi Uehara Plasma treating apparatus and its electrode structure
KR20100129292A (ko) * 2008-02-11 2010-12-08 에이피제트, 인크. 하류부 공정을 위한 넓은 영역의 대기압 플라즈마
KR20110046295A (ko) * 2009-10-28 2011-05-04 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100368200B1 (ko) * 1999-07-27 2003-01-24 마츠시다 덴코 가부시키가이샤 플라즈마 생성용 전극, 그 전극을 사용하는 플라즈마 처리장치, 및 그 장치로 플라즈마 처리하는 방법
KR20010096568A (ko) * 2000-03-23 2001-11-07 마찌다 가쯔히꼬 박막 형성용 플라즈마 성막 장치
US20060185594A1 (en) * 2003-07-23 2006-08-24 Tsuyoshi Uehara Plasma treating apparatus and its electrode structure
KR20100129292A (ko) * 2008-02-11 2010-12-08 에이피제트, 인크. 하류부 공정을 위한 넓은 영역의 대기압 플라즈마
KR20110046295A (ko) * 2009-10-28 2011-05-04 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치

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