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WO2014098392A1 - Composition de solution de gravure de film métallique et procédé de gravure l'utilisant - Google Patents

Composition de solution de gravure de film métallique et procédé de gravure l'utilisant Download PDF

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Publication number
WO2014098392A1
WO2014098392A1 PCT/KR2013/011158 KR2013011158W WO2014098392A1 WO 2014098392 A1 WO2014098392 A1 WO 2014098392A1 KR 2013011158 W KR2013011158 W KR 2013011158W WO 2014098392 A1 WO2014098392 A1 WO 2014098392A1
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WO
WIPO (PCT)
Prior art keywords
film
compound
etching
weight
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2013/011158
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English (en)
Korean (ko)
Inventor
이명한
구병수
조삼영
이기범
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongjin Semichem Co Ltd
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Priority to CN201380064446.4A priority Critical patent/CN104838040B/zh
Publication of WO2014098392A1 publication Critical patent/WO2014098392A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/38—Alkaline compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H10P50/667—

Definitions

  • the present invention relates to a metal film etchant composition, and more particularly, to an etching solution composition and an etching method using the same, which can simultaneously etch a double film of a copper film and an indium tin oxide film, a copper film and a metal film.
  • a transparent electrode such as an indium tin oxide layer (ITO) is formed as a barrier film under a copper metal film in a gate electrode or a wiring
  • ITO indium tin oxide layer
  • a double layer of a copper film and an indium tin oxide film As electrodes or wirings of a display panel, since the copper film and the indium tin oxide film are simultaneously etched simultaneously, it is difficult to form electrodes or wires.
  • the copper film and the indium tin oxide film have to be etched in separate processes (secondary etching), and for this purpose, a 5-mask process has to be performed.
  • an etching liquid composition for etching the copper film or the indium tin oxide film an oxidant solution mainly containing hydrogen peroxide, an inorganic acid, an organic acid, or the like is mainly used.
  • a conventional etching liquid composition has no particular problem when etching a single film of a copper film or an indium tin oxide film, but in general, since the etching rate of the indium tin oxide film is faster than that of the copper film, the copper film and the indium tin oxide film In etching a double layer, there is a disadvantage in that a tail, an etching profile defect, a taper angle defect, and the like of the indium tin oxide film, which is a barrier film, are caused. In addition, the conventional etching liquid composition is insufficient in stability, and may generate precipitates such as a residue, a residual layer, etc. over time of use.
  • An object of the present invention is to provide an etching liquid composition capable of simultaneously etching a double film of a metal film, particularly a copper film and an indium tin oxide film, or a double film of a copper film and a metal film, and an etching method using the same.
  • Another object of the present invention is to provide an etching liquid composition having an excellent etching profile such as a taper angle and an etching method using the same even when etching a double layer of a copper film and an indium tin oxide film.
  • Still another object of the present invention is to provide an etching solution composition and an etching method using the same, wherein the etching rate is fast, and many substrates can be processed in a short time, and unstable hydrogen peroxide is stabilized with an organic acid, thereby improving stability.
  • the present invention 5 to 20% by weight of hydrogen peroxide; 0.1-5% by weight of sulfonic acid compound; 0.1 to 2 wt% carbonyl organic acid compound; 0.1 to 0.4% by weight of fluorine compound; 0.01-3% by weight of an azole compound; And it provides an etchant composition comprising the remaining water.
  • the present invention forming a photoresist pattern of a predetermined shape on a substrate on which a metal film is formed; And etching the metal film from the substrate by using the photoresist pattern as a mask and contacting the etchant composition to provide an etching method.
  • the etchant composition according to the present invention may simultaneously etch simultaneously, and has an excellent etching profile such as a taper angle. In addition to the fast etching speed, the stability is excellent.
  • Example 1 is an electron scanning micrograph of a copper film and an indium tin oxide double film etched using the compositions of Examples 1 to 5 of the present invention.
  • the etchant composition according to the present invention is for simultaneously etching a double film including a copper film, 5 to 20% by weight of hydrogen peroxide (H 2 O 2 ), 0.1 to 5% by weight of sulfonic acid compound , 0.1 to 2% by weight of carbo It includes a nile organic acid compound, 0.1 to 0.4% by weight of fluoride (Fluoride), 0.01 to 3% by weight of the azole compound and the remaining water.
  • H 2 O 2 hydrogen peroxide
  • sulfonic acid compound 0.1 to 2% by weight of carbo
  • carbo It includes a nile organic acid compound, 0.1 to 0.4% by weight of fluoride (Fluoride), 0.01 to 3% by weight of the azole compound and the remaining water.
  • Hydrogen peroxide (H 2 O 2 ) used in the etchant composition of the present invention is an oxidant for oxidizing and etching the copper film through the same process as in Scheme 1 below.
  • the content of the hydrogen peroxide (H 2 O 2 ) is 5 to 20% by weight, preferably 5 to 15% by weight, more preferably 5 to 10% by weight based on the total etching liquid composition. If the content of hydrogen peroxide (H 2 O 2 ) is too small, there is a fear that the copper film is insufficiently etched, if too large, the etching rate of the copper film is excessively fast, the copper film in the double film etching of the copper film / indium tin oxide film There is a risk of over-etching.
  • the sulfonic acid compound is an auxiliary oxidant of the copper film and the indium tin oxide film (transparent electrode film).
  • the sulfonic acid compound is a compound that generates sulfonate ions (SO 3 ⁇ ) in an aqueous solution, and includes benzenesulfonic acid (C 6 H 5 SO 3 H) and toluenesulfonic acid.
  • cyclic or chain hydrocarbon sulfonic acid compound having 1 to 10 carbon atoms such as methanesulfonic acid (CH 3 SO 3 H), aminosulfonic acid (amino 2)
  • Inorganic sulfonic acid compounds such as SO 3 H), salts thereof (for example, ammonium salts), mixtures thereof, and the like, and preferably methanesulfonic acid (CH 3 SO 3 H) can be used.
  • the content of the sulfonic acid compound is 0.1 to 5% by weight, preferably 0.2 to 3% by weight, more preferably 0.5 to 2% by weight based on the total composition.
  • the etching of the copper film may be insufficient.
  • the etching rate of the copper film may be too high, and process control may be difficult.
  • the carbonyl-based organic acid compound is ligand-bonded with primary copper ions generated by etching of the copper film, and serves as a chelating agent to mitigate the decrease in the oxidation power of hydrogen peroxide by the copper ions over time.
  • the carbonyl organic acid compound may be selected from the group consisting of malonic acid, succinic acid, formic acid, lactic acid, C 3 H 6 O 3 , and mixtures thereof. Compounds can be used, preferably lactic acid.
  • the content of the carbonyl organic acid compound is 0.1 to 2% by weight, preferably 0.1 to 1% by weight, more preferably 0.1 to 0.5% by weight based on the total composition.
  • the fluoride compound controls the etching rate of the indium tin oxide (ITO) transparent electrode, which is a barrier film of the copper film, and serves to form a taper angle in the double film or multiple films.
  • ITO indium tin oxide
  • various compounds for generating fluoride ions (F ⁇ ) in an aqueous solution may be used.
  • the content of the fluorine compound is 0.1 to 0.4% by weight, preferably 0.1 to 0.2% by weight based on the total composition. If the content of the fluorine compound is less than the above range, the etching rate of the barrier film may be lowered and the taper angle may be poor. If the content of the above fluorine compound exceeds the above range, the copper film or the glass film below the transparent positive electrode film is etched by the fluorine ion. The barrier film may be overetched.
  • the azole compound used in the etchant composition of the present invention suppresses the etching of the copper film, thereby controlling the etching rate of the copper film and the indium tin oxide film (ITO), as well as the cut dimension loss of the copper metal wiring.
  • metal wiring can be used as gate and data wiring.
  • the azole compound a 5-membered heterocyclic compound containing a nitrogen atom and at least one non-carbon atom in the ring can be used.
  • benzotriazole, aminotetrazole, CH 3 N 5 ), imidazole, pyrazole, mixtures thereof, and the like, preferably aminotetrazole can be used.
  • the content of the azole compound is 0.01 to 3% by weight, preferably 0.05 to 1% by weight, more preferably 0.1 to 0.2% by weight based on the total composition. If the content of the azole compound is less than the above range, there is a fear that the copper film is excessively etched, if it exceeds the above range, there is no particular benefit, it is economically undesirable.
  • the remaining components are water (including an aqueous medium having the same function as "water” in the present specification), preferably deionized water (DI), distilled water and the like.
  • the etchant composition according to the present invention may further include conventional additives, such as a pH adjuster and a corrosion inhibitor, as necessary, within the limits of achieving the object and effect of the invention.
  • the etchant composition according to the present invention may be prepared by any known method.
  • a sulfonic acid compound , a carbonyl organic acid compound, a fluorine compound, an azole compound, and the like are added at a concentration required for an aqueous medium such as deionized water and distilled water, and then an aqueous solution of hydrogen peroxide (H 2 O 2 ) is added to the aqueous solution.
  • an aqueous solution of hydrogen peroxide (H 2 O 2 ) is added to the aqueous solution.
  • the composition of the present invention can be prepared by adding to the medium at a desired concentration.
  • the etching liquid composition according to the present invention is a metal film, preferably (i) a double film of a copper film / indium tin oxide film formed by laminating a copper film and an indium tin oxide film, and (ii) a copper film formed by laminating a copper film and a metal film. It is useful for batch etching of double film of metal film. For example, in manufacturing a liquid crystal display (LCD) panel or the like, a pixel electrode or a thin film transistor (TFT) electrode made of a double film of a copper film / indium tin oxide film is formed, or a pixel electrode and copper made of an indium tin oxide film are formed.
  • LCD liquid crystal display
  • TFT thin film transistor
  • the double film can be effectively etched using the composition of the present invention.
  • a copper film / indium tin oxide double film is used as a gate electrode, and a copper / metal film, in particular, a copper / metal alloy film, for example, a copper / molybdenum-titanium (MoTi) alloy film, is used as a source or drain electrode.
  • a copper / metal film in particular, a copper / metal alloy film, for example, a copper / molybdenum-titanium (MoTi) alloy film, is used as a source or drain electrode.
  • MoTi molybdenum-titanium
  • the copper film may be a single component copper film made of pure copper (Cu), an alloy containing copper (Cu) and other metals such as molybdenum (Mo), titanium (Ti), or, in the case of an alloy,
  • the ratio of copper is not specifically limited, It is 10 weight% or more, Preferably it is 30 weight% or more, More preferably, it is 50 weight% or more.
  • the indium tin oxide film includes indium oxide and tin oxide (in this case, the content of indium oxide relative to the tin oxide component is usually 20 mol% or more, preferably 50 mol%
  • Al, Ni, Cu, Ta, Hf, Ti, etc. may be doped as needed.
  • a conventional metal film-etching liquid composition contacting method can be used.
  • a photoresist pattern having a predetermined shape may be formed on a substrate on which a double layer is formed, and the photoresist pattern may be used as a mask, and the etching solution composition of the present invention may be contacted to simultaneously remove and remove the double layer from the substrate.
  • the second etching of the double layer of the copper film / indium tin oxide film using a 5 mask (mask), using a 4 mask (mask) In this case, the double layer of the copper film / indium tin oxide film can be etched in a batch, thereby simplifying the process and improving the production yield.
  • source / drain (S / D) wiring may be simultaneously etched, and thus, the gate and source / drain electrodes may be substantially etched collectively.
  • a fast etching process and excellent tapered etching and profile can be obtained.
  • Example 1 Hydrogen Peroxide (H 2 O 2 ) Methanesulfonic acid (CH 3 SO 3 H) Lactate (C 3 H 6 O 3 ) Sodium Fluoride (NaF) Aminotetrazole (CH 3 N 5 )
  • Example 1 5.0 0.5 0.1 0.1 0.1 Example 2 6.0 1.0 0.1 0.1 0.1 Example 3 7.0 1.0 0.1 0.2 0.1 Example 4 8.0 1.5 0.5 0.2 0.15
  • Example 5 10.0 2.0 0.5 0.2 0.15 Comparative Example 1 10.0 2.0 3.0 0.2 0.15 Comparative Example 2 10.0 2.0 0.5 0.5 0.2 Comparative Example 3 10.0 3.0 1.0 0.2 5.0 Comparative Example 4 25.0 4.0 1.0 0.3 0.3 Comparative Example 5 10.0 10.0 1.0 0.4 0.3
  • CD skew is Very good ( ⁇ ) for 0.8 to 1.0 ⁇ m, good ( ⁇ ) for 0.3 to 0.8 ⁇ m, and poor (X) for less than 0.3 ⁇ m, and very good ( ⁇ ) for taper angles of 40 to 45 °. If it is °, it is excellent ( ⁇ ), and if it is 70 ⁇ 90 °, it is indicated as bad (X)
  • the etching liquid compositions of Examples 1 to 5 have excellent etching characteristics and CD skew without significant difference, while the taper angle is adjusted to 40 to 45 °,
  • the etchant compositions of Comparative Examples 1 to 5 were poor in etching characteristics as the content of some components was too small or too large.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

L'invention concerne une composition de solution de gravure qui permet de graver simultanément un double film constitué d'un film de cuivre et d'un film d'oxyde d'étain et d'indium ou un double film constitué d'un film de cuivre et d'un film métallique ; et un procédé de gravure l'utilisant. La composition de solution de gravure comprend entre 5 et 20 % en poids de peroxyde d'hydrogène, entre 0,1 et 5 % en poids d'un composé d'acide sulfonique, entre 0,1 et 2 % en poids d'un composé d'acide organique à base de carbonyle, entre 0,1 et 0,4 % en poids d'un composé du fluor, entre 0,01 et 3 % en poids d'un composé à base d'azole, le reste étant de l'eau.
PCT/KR2013/011158 2012-12-18 2013-12-04 Composition de solution de gravure de film métallique et procédé de gravure l'utilisant Ceased WO2014098392A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201380064446.4A CN104838040B (zh) 2012-12-18 2013-12-04 金属膜蚀刻液组合物及利用了该组合物的蚀刻方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2012-0148232 2012-12-18
KR1020120148232A KR102048022B1 (ko) 2012-12-18 2012-12-18 금속막 식각액 조성물 및 이를 이용한 식각 방법

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WO2014098392A1 true WO2014098392A1 (fr) 2014-06-26

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KR (1) KR102048022B1 (fr)
CN (1) CN104838040B (fr)
WO (1) WO2014098392A1 (fr)

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CN111945163A (zh) * 2020-08-03 2020-11-17 镇江润晶高纯化工科技股份有限公司 一种铜蚀刻液组合物
US11031253B2 (en) 2018-12-24 2021-06-08 Imec Vzw Etching using an electrolyzed chloride solution

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US10920143B2 (en) 2015-08-26 2021-02-16 Adeka Corporation Etching liquid composition and etching method
KR102603630B1 (ko) * 2016-04-25 2023-11-17 동우 화인켐 주식회사 표시장치용 어레이 기판의 제조방법
KR102677476B1 (ko) * 2016-07-26 2024-06-24 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 금속 패턴 제조 방법
CN109844910B (zh) * 2016-10-21 2023-04-28 株式会社Adeka 蚀刻液组合物和蚀刻方法
KR20190027019A (ko) * 2017-09-04 2019-03-14 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 금속 패턴과 박막 트랜지스터 기판 제조 방법
KR102020414B1 (ko) * 2017-12-22 2019-09-10 주식회사 포스코 아연 전기도금 냉연강판의 무늬형 표면 결함 제거용 에칭 조성물 및 상기 에칭 조성물을 포함하는 산세 조성물
KR102487940B1 (ko) * 2018-03-19 2023-01-16 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 금속 패턴과 어레이 기판의 제조 방법
CN114164003A (zh) * 2021-12-06 2022-03-11 Tcl华星光电技术有限公司 用于显示面板的蚀刻剂组合物及显示面板的蚀刻方法

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KR20090014474A (ko) * 2007-08-06 2009-02-11 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조 방법
KR20090030225A (ko) * 2007-09-19 2009-03-24 나가세케무텍쿠스가부시키가이샤 에칭 조성물
KR100883960B1 (ko) * 2007-10-01 2009-02-17 (주)이그잭스 구리 또는 구리 합금 막의 에칭제
KR20100082094A (ko) * 2009-01-08 2010-07-16 테크노세미켐 주식회사 박막 트랜지스터 액정표시장치용 식각조성물

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11031253B2 (en) 2018-12-24 2021-06-08 Imec Vzw Etching using an electrolyzed chloride solution
CN111945163A (zh) * 2020-08-03 2020-11-17 镇江润晶高纯化工科技股份有限公司 一种铜蚀刻液组合物

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