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WO2011019209A2 - Composition d'agent de gravure destinée à former des interconnexions métalliques - Google Patents

Composition d'agent de gravure destinée à former des interconnexions métalliques Download PDF

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Publication number
WO2011019209A2
WO2011019209A2 PCT/KR2010/005277 KR2010005277W WO2011019209A2 WO 2011019209 A2 WO2011019209 A2 WO 2011019209A2 KR 2010005277 W KR2010005277 W KR 2010005277W WO 2011019209 A2 WO2011019209 A2 WO 2011019209A2
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WO
WIPO (PCT)
Prior art keywords
film
metal film
titanium
aluminum
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/005277
Other languages
English (en)
Korean (ko)
Other versions
WO2011019209A3 (fr
Inventor
양승재
이석준
장상훈
이준우
임민기
권오병
박영철
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongwoo Fine Chem Co Ltd
Original Assignee
Dongwoo Fine Chem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090074367A external-priority patent/KR20110016724A/ko
Priority claimed from KR1020090083461A external-priority patent/KR20110025408A/ko
Application filed by Dongwoo Fine Chem Co Ltd filed Critical Dongwoo Fine Chem Co Ltd
Priority to CN2010800356463A priority Critical patent/CN102471687A/zh
Publication of WO2011019209A2 publication Critical patent/WO2011019209A2/fr
Publication of WO2011019209A3 publication Critical patent/WO2011019209A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H10P50/667—

Definitions

  • the present invention relates to an etchant composition used for the wet etching of metal films in the manufacture of semiconductor devices, and more particularly to indium transparent conduction forming pixel electrodes, gate electrodes, source electrodes, and drain electrodes in the construction of flat panel displays.
  • the present invention relates to an etching liquid composition of a metal film composed of at least one film selected from a film, an aluminum metal film, and a titanium metal film.
  • a transparent pixel electrode, a gate electrode, a source electrode, and a drain electrode are used in a thin film transistor (TFT) array.
  • TFT thin film transistor
  • a transparent conductive film containing indium as a main component is used as the pixel electrode, and a single film or multiple films are used as the main component as Cr, Cu, Mo, Ti, Al, etc. as the gate electrode, the source electrode, and the drain electrode.
  • an indium transparent conductive film mainly composed of indium in the upper layer, an aluminum metal film mainly composed of aluminum in the middle layer, and a titanium metal film mainly composed of titanium in the lower layer are used.
  • a new triple film composed is also being developed. Therefore, in order to efficiently etch, it is required to develop an etchant that can wet-etch the triple layer as described above.
  • the aluminum-based metal film is made of aluminum and La, Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W in order to avoid process problems caused by hillock due to heat of aluminum. Alloys made of metals such as, Ni, Nd, Sn, Fe, Si, Ti, Pt, and C have been developed in various ways. In particular, Al-La alloys containing Al-La alloys or other metals with Al-La as main components An aluminum alloy of the form -X was developed. The other metal means Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti, Pt, C, etc.
  • an etchant having excellent etching characteristics for each of an indium transparent conductive film, an aluminum metal film, and a titanium metal film is required, and in particular, Al- which can be used as an aluminum metal film.
  • An etching solution capable of efficiently etching La or Al-La-X type aluminum alloy films has to be developed.
  • the present invention has excellent etching characteristics for each of an indium-based transparent conductive film, an aluminum-based metal film, and a titanium-based metal film.
  • An object of the present invention is to provide an etching liquid composition capable of efficiently collectively etching a triple film made of a -La-based alloy film and a titanium-based metal film.
  • the present invention comprises 0.1 to 10% by weight of nitric acid, 0.1 to 10% by weight of sulfuric acid, 0.01 to 5% by weight of fluorine-containing compound and the balance of water based on the total weight of the composition.
  • An etching liquid composition of a metal film composed of at least one film selected from the group metal films is provided.
  • the etching liquid composition of the present invention has excellent etching characteristics for each of the indium-based transparent conductive film, the aluminum-based metal film, and the titanium-based metal film, and particularly, the etching property of the Al-La-based alloy film which can be used as the aluminum-based metal film is Excellent, it is possible to efficiently etch a triple layer composed of an indium-based transparent conductive film, an Al-La-based alloy film and a titanium-based metal film. Therefore, the etchant composition of the present invention provides the effect of greatly improving productivity by simplifying the etching process.
  • Example 1 is an electron scanning micrograph showing the result of etching the a-ITO / AlLaNi / Ti triple layer with the etchant of Example 7.
  • FIG. 2 is an electron scanning micrograph showing the result of etching a-ITO / AlLaNi / Ti triple layer with the etchant of Comparative Example 2.
  • FIG. 2 is an electron scanning micrograph showing the result of etching a-ITO / AlLaNi / Ti triple layer with the etchant of Comparative Example 2.
  • the present invention is an indium-based transparent conductive film, an aluminum-based metal film, containing 0.1 to 10% by weight of nitric acid, 0.1 to 10% by weight of sulfuric acid, 0.01 to 5% by weight of a fluorine-containing compound, and a residual amount of water based on the total weight of the composition
  • the present invention relates to an etching liquid composition of a metal film composed of one or more films selected from titanium-based metal films.
  • the indium-based transparent conductive film means a transparent conductive film containing indium as a main component, and specific examples include indium oxide films such as indium zinc oxide film (IZO) and indium tin oxide film (ITO).
  • indium oxide films such as indium zinc oxide film (IZO) and indium tin oxide film (ITO).
  • the aluminum-based metal film means an aluminum film or an aluminum alloy film containing aluminum as a main component.
  • the titanium-based metal film means a titanium film or a titanium alloy film containing titanium as a main component.
  • alloy films such as Ti and W, Mo, Nd, Ni, Ta which have Ti as a main component, are mentioned, for example.
  • the metal film composed of at least one film selected from an indium-based transparent conductive film, an aluminum-based metal film, and a titanium-based metal film includes a single film and a multi-layered film (multilayer film).
  • the etchant composition of the present invention can be preferably used for batch etching of a triple layer in which an indium-based transparent conductive film is formed on an upper layer, an aluminum-based metal film is formed on an intermediate layer, and a titanium-based metal film is formed on a lower layer.
  • the etchant composition of the present invention can be more preferably used for etching a metal film (single film or multiple films) including an Al-La-based alloy film.
  • a metal film single film or multiple films
  • Al-La-based alloy film For example, Al-La type alloy film;
  • the indium-based transparent conductive film may be formed on the upper layer, the Al-La-based alloy film is formed on the intermediate layer, and the titanium-based metal film may be more preferably used for batch etching of the triple layer formed on the lower layer.
  • the Al-La-based alloy film is Al-La or Al-La-X containing 90% by weight or more of aluminum and 10% by weight or less of La (X is Mg, Zn, In, Ca, Te, Sr, Cr, At least one metal) alloy film selected from Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti, Pt, and C).
  • X is Mg, Zn, In, Ca, Te, Sr, Cr, At least one metal
  • Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti, Pt, and C When an Al-La or Al-La-X alloy film is used as the aluminum-based metal film, there is an advantage that a process problem due to the occurrence of a hillock phenomenon due to the heat of aluminum can be avoided.
  • the Al-La-based alloy film and photoresist, Al-La-based alloy film and the upper portion of the substrate which is a problem when using the etching solution of the existing composition Curling phenomenon on the Al-La alloy layer due to the difference in etching speed; Bad angle of inclination; Poor uniformity; Since the problem of side etch increase due to the difference in etching between the panel and the pad does not occur, the Al-La alloy film can be etched very efficiently.
  • Nitric acid contained in the etchant composition of the present invention serves to oxidize the surface of the indium-based transparent conductive film, the aluminum-based metal film and the titanium-based metal film, and is 0.1 to 10% by weight, more preferably 2 to 7% by weight based on the total weight of the composition. It is contained in%.
  • the nitric acid is contained in less than 0.1% by weight, the etching rate of the aluminum-based metal film and the titanium-based metal film is lowered. This phenomenon causes a difference in the etching rates for each position in the substrate, which leads to tailing of the titanium-based metal film. Cause stains.
  • the metal wiring may lose its function.
  • Sulfuric acid contained in the etchant composition of the present invention serves to oxidize the surface of the aluminum-based metal film and the titanium-based metal film, and as an auxiliary oxidant of the indium-based transparent conductive film, 0.1 to 10% by weight, more preferably based on the total weight of the composition. It is included in 2 to 7% by weight. If the content is less than 0.1% by weight, the etching rate of the aluminum-based metal film is lowered, and staining occurs in the substrate due to the occurrence of residues or non-uniform etching. If the content is more than 10% by weight, the aluminum-based film is caused by excessive etching rate. The metal film and the titanium metal film may be lost.
  • the fluorine-containing compound included in the etchant composition of the present invention serves to etch the surface of the oxidized aluminum-based metal film and titanium-based metal film, 0.01 to 5% by weight, more preferably 0.1 to 2% by weight relative to the total weight of the composition It is contained in%.
  • the fluorine-containing compound is contained in less than 0.01% by weight, the etching rate of the aluminum-based metal film and the titanium-based metal film is reduced, thereby causing uneven etching in the substrate.
  • the fluorine-containing compound exceeds 5% by weight, the aluminum-based metal film and the titanium-based metal film may be lost due to excessive etching rate, and damage to the lower layer may occur.
  • the fluorine-containing compound refers to a compound capable of dissociating fluorine ions or polyatomic fluorine ions in a dissolved state, and specifically, ammonium fluoride, sodium fluoride, potassium fluoride, ammonium bifluoride, sodium bifluoride, potassium bifluoride, or the like. These may be used alone or in combination of two or more.
  • deionized water as water contained in the etching liquid composition of this invention, and it is preferable to use the deionized water as 18 dl / cm or more for a semiconductor process.
  • the etchant composition of the present invention may further include at least one of an etch regulator, a surfactant, a metal ion sequestrant, a corrosion inhibitor and a pH regulator in addition to the above-mentioned components.
  • test substrate As the test substrate, (1) Al-La-Ni alloy single layer was deposited on glass, photoresist was patterned in a certain shape, and (2) a-ITO / AlLaNi / Ti triple layer was deposited on SiNx layer. The photoresist was patterned into a shape of a certain shape.
  • the etchant composition of Examples 1 to 10 of the present invention is not only applied to (1) Al-La-Ni alloy single layer, but also to (2) a-ITO / AlLaNi / Ti triple layer. Also excellent etching profile was shown, there was no damage to the underlying film and residue (see Fig. 1). However, in the case of Comparative Example 1 etchant containing no fluorine-containing compound, the etching profile defect and the (2) a-ITO / AlLaNi / Ti triple layer were not only applied to (1) Al-La-Ni alloy single layer. Unetch of the Ti film occurred, and the etching solution of Comparative Examples 2 and 3 containing an excess of nitric acid also exhibited poor etch profile and / or damage to the underlying film (see FIG. 2).

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)

Abstract

L'invention concerne une composition d'agent de gravure destinée à un film métallique comprenant au moins un film sélectionné parmi un film conducteur transparent à base d'indium, un film métallique à base d'aluminium et un film métallique à base de titane, utilisé dans l'interconnexion d'une électrode de pixel, d'une électrode de grille, d'une électrode source et d'une électrode de drainage. La composition d'agent de gravure présente d'excellentes caractéristiques de gravure sur un film conducteur transparent à base d'indium, un film métallique à base d'aluminium et un film métallique à base de titane, respectivement, et plus particulièrement sur un film d'alliage à base d'Al-La. En outre, la composition d'agent de gravure permet de graver efficacement un film à trois couches comprenant un film conducteur transparent à base d'indium, un film d'alliage à base d'Al-La et un film métallique à base de titane en une fois.
PCT/KR2010/005277 2009-08-12 2010-08-11 Composition d'agent de gravure destinée à former des interconnexions métalliques Ceased WO2011019209A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010800356463A CN102471687A (zh) 2009-08-12 2010-08-11 用于形成金属互连的刻蚀剂组合物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2009-0074367 2009-08-12
KR1020090074367A KR20110016724A (ko) 2009-08-12 2009-08-12 금속 배선 형성을 위한 식각액 조성물
KR1020090083461A KR20110025408A (ko) 2009-09-04 2009-09-04 금속 배선 형성을 위한 식각액 조성물
KR10-2009-0083461 2009-09-04

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Publication Number Publication Date
WO2011019209A2 true WO2011019209A2 (fr) 2011-02-17
WO2011019209A3 WO2011019209A3 (fr) 2011-06-03

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PCT/KR2010/005277 Ceased WO2011019209A2 (fr) 2009-08-12 2010-08-11 Composition d'agent de gravure destinée à former des interconnexions métalliques

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WO (1) WO2011019209A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102464392A (zh) * 2011-10-20 2012-05-23 常州亚环环保科技有限公司 一种去除高浓度含氯废水的复合除氯剂及其应用方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140063284A (ko) * 2012-11-16 2014-05-27 동우 화인켐 주식회사 은 박막의 식각액 조성물 및 이를 이용한 금속 패턴의 형성방법
CN103087718B (zh) * 2013-01-16 2014-12-31 四川大学 湿法刻蚀镍酸镧薄膜和铁电薄膜/镍酸镧复合薄膜的腐蚀液及其制备方法
KR102673957B1 (ko) * 2016-11-03 2024-06-11 삼성디스플레이 주식회사 식각액 조성물, 이를 이용한 배선 패턴 형성 방법 및 유기발광 표시장치의 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4326928B2 (ja) * 2003-12-09 2009-09-09 株式会社東芝 フォトレジスト残渣除去液組成物及び該組成物を用いる半導体回路素子の製造方法
US7329365B2 (en) * 2004-08-25 2008-02-12 Samsung Electronics Co., Ltd. Etchant composition for indium oxide layer and etching method using the same
KR100639299B1 (ko) * 2005-02-25 2006-10-26 동우 화인켐 주식회사 평판디스플레이의 박막트랜지스터 형성을 위한 금속 전극용식각액 조성물
KR101317473B1 (ko) * 2006-08-23 2013-10-18 간또 가가꾸 가부시끼가이샤 티탄 및 알루미늄 금속 적층막용 에칭액 조성물
KR101341708B1 (ko) * 2006-12-05 2013-12-16 동우 화인켐 주식회사 티타늄 또는 티타늄 합금막, 및 알루미늄 또는 알루미늄합금막을 포함하는 다층막 식각액 조성물

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102464392A (zh) * 2011-10-20 2012-05-23 常州亚环环保科技有限公司 一种去除高浓度含氯废水的复合除氯剂及其应用方法

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Publication number Publication date
CN102471687A (zh) 2012-05-23
WO2011019209A3 (fr) 2011-06-03

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