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WO2014094547A1 - Ensemble électroluminescent et procédé de préparation de celui-ci - Google Patents

Ensemble électroluminescent et procédé de préparation de celui-ci Download PDF

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Publication number
WO2014094547A1
WO2014094547A1 PCT/CN2013/088692 CN2013088692W WO2014094547A1 WO 2014094547 A1 WO2014094547 A1 WO 2014094547A1 CN 2013088692 W CN2013088692 W CN 2013088692W WO 2014094547 A1 WO2014094547 A1 WO 2014094547A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat sink
ceramic substrate
light emitting
led chip
emitting assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2013/088692
Other languages
English (en)
Inventor
Xinping Lin
Yongpeng REN
Qiang Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BYD Co Ltd
Shenzhen BYD Auto R&D Co Ltd
Original Assignee
BYD Co Ltd
Shenzhen BYD Auto R&D Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BYD Co Ltd, Shenzhen BYD Auto R&D Co Ltd filed Critical BYD Co Ltd
Publication of WO2014094547A1 publication Critical patent/WO2014094547A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling
    • H10W40/10—
    • H10W70/68—
    • H10W72/01515—
    • H10W72/075—

Definitions

  • the present disclosure relates to the light emitting diode (LED) field, particularly to a light emitting assembly and a method for preparing the light emitting assembly.
  • LED light emitting diode
  • the LED chip generally converts only about 15% to about 25% of the electric energy into light energy, and the remaining electric energy is converted into heat and dissipated.
  • the power of a single chip is increased.
  • the heat generated is increased at the same time. If the heat cannot be removed in time, the temperature of the chip will increase, and the luminous efficiency and the service life of the chip may be reduced. Further, other performances such as coloration of the chip may be influenced by the temperature increasing. Therefore, there is a need to provide an LED chip having good heat dissipation performances.
  • Embodiments of the present disclosure seek to solve at least one of the problems existing in the prior art to at least some extent, or to provide a consumer with a useful commercial choice.
  • Embodiments of a first broad aspect of the present disclosure provide a light emitting assembly.
  • the light emitting assembly may include: a copper heat sink; a ceramic substrate having a mounting hole; a copper-oxygen eutectic layer formed between the copper heat sink and the ceramic substrate; a positive electrode and a negative electrode disposed on a surface of the ceramic substrate; an LED chip disposed on the copper heat sink and within the mounting hole, and electrically connected with the positive and negative electrodes; and a fluorescent substance layer covering the LED chip.
  • the copper heat sink may be bonded with the ceramic substrate having a low thermal expansion coefficient by eutectic welding, thus a thermal expansion coefficient of the copper heat sink may be decreased. Therefore, a reliable bonding between the LED chip and the copper heat sink may be formed, which may reduce a thermal resistance of the light emitting assembly. In this way, a junction temperature of the LED chip may be reduced, so that both luminous efficiency and serve life of the light emitting assembly may be improved.
  • Embodiments of a second broad aspect of the present disclosure provide a method for preparing a light emitting assembly.
  • the method may include: providing a copper heat sink and a ceramic substrate having a mounting hole; disposing the ceramic substrate on the copper heat sink and forming a copper-oxygen eutectic layer between the ceramic substrate and the copper heat sink by eutectic welding; providing a positive electrode and a negative electrode on a surface of the ceramic substrate; disposing an LED chip on the copper heat sink and within the mounting hole; electrically connecting the LED chip with the positive and negative electrodes; and covering the LED chip with a fluorescent substance layer.
  • the copper heat sink may be bonded to the ceramic substrate having a low thermal expansion coefficient, thus the thermal expansion coefficient of the copper heat sink may be reduced. Therefore, a reliable bonding between the LED chip and the copper heat sink may be formed, which may reduce a thermal resistance of the light emitting assembly. In this way, a junction temperature of the LED chip may be reduced, so that both luminous efficiency and serve life of the light emitting assembly may be improved.
  • Fig.l is a cross-sectional view of a light emitting assembly according to an embodiment of the present disclosure.
  • Fig. 2 is a flow chart showing a method for preparing a light emitting assembly according to an embodiment of the present disclosure.
  • a structure in which a first feature is "on" a second feature may include an embodiment in which the first feature directly contacts the second feature and may include an embodiment in which an additional feature is prepared between the first feature and the second feature so that the first feature does not directly contact the second feature.
  • a light emitting assembly 100 may include: a copper heat sink 1; a ceramic substrate 2 having a mounting hole 6; a copper-oxygen eutectic layer 7 formed between the copper heat sink 1 and the ceramic substrate 2; a positive electrode 31 and a negative electrode 32 disposed on a surface of the ceramic substrate 2; an LED chip 4 disposed on the copper heat sink 1 and within the mounting hole 6, and electrically connected with the positive and negative electrodes 31, 32; and a fluorescent substance layer 5 covering the LED chip 4.
  • the copper heat sink may 1 be made from copper having a high thermal conductivity.
  • the copper heat sink 1 may be connected with the ceramic substrate 2 having a low thermal expansion coefficient via the copper-oxygen eutectic layer 7 (which may be formed by eutectic welding the copper heat sink 1 and the ceramic substrate 2) between the copper heat sink 1 and the ceramic substrate 2, thus a thermal expansion coefficient of the copper heat sink 1 may be reduced to be slightly higher than that of the ceramic substrate 2. Therefore the LED chip 4 may be disposed on a surface of the copper heat sink 1 directly. In addition, the adhesion between the LED chip 4 and the copper heat sink 1 may be increased.
  • the LED chip 4 may include a sapphire substrate (not shown) and electrodes (not shown) formed on the same side of the sapphire substrate.
  • the copper heat sink 1 may have a thickness of about 0.1 millimeters to about 100 millimeters.
  • the ceramic substrate 2 may have a thickness of about 0.1 millimeters to about 2 millimeters. Alternatively, the ceramic substrate 2 may have a thickness of about 0.25 millimeters to about 0.63 millimeters.
  • the copper-oxygen eutectic layer 7 may have a thickness of about 0.01 microns to about 100 microns. With the thicknesses of the copper heat sink 1, ceramic substrate 2 and copper-oxygen eutectic layer 7 mentioned above, the combination between the copper heat sink 1 and the ceramic substrate 2 may be improved.
  • a thickness of the ceramic 1 substrate may be greater than that of the LED chip 4.
  • the light emitting assembly 100 according to embodiments of the present disclosure may have a larger concave structure, thus facilitating following steps for preparing the light emitting assembly 100, for example, filling the concave structure with a mixture of fluorescent powers and epoxy resin to form the fluorescent substance layer 5.
  • the positive and negative electrodes 31, 32 may be electrically connected with a power source (not shown).
  • the power source may include an isolated drive power supply. Then the light emitting assembly 100 according to embodiments of the present disclosure may be more safe and reliable.
  • the light emitting assembly 100 may further include a first nickel-gold alloy layer 81 between the copper heat sink 1 and the LED chip 4.
  • the light emitting assembly 100 may further include a second nickel-gold alloy layer 82 on a surface of the positive electrode 31 and a third nickel-gold alloy layer 83 on a surface of the negative electrode 32.
  • the mounting hole 6 in the ceramic substrate 2 may be formed by any suitable methods in related art, such as punching or cutting the ceramic substrate 2.
  • a method for preparing a light emitting assembly according to embodiments of the present disclosure may be described with reference to Fig. 2 in the following.
  • a method for preparing a light emitting assembly may include steps of: providing a copper heat sink and a ceramic substrate having a mounting hole; disposing the ceramic substrate on the copper heat sink and forming a copper-oxygen eutectic layer between the ceramic substrate and the copper heat sink by eutectic welding; providing a positive electrode and a negative electrode on a surface of the ceramic substrate; disposing an LED chip on the copper heat sink and within the mounting hole; electrically connecting the LED chip with the positive and negative electrodes; and covering the LED chip with a fluorescent substance layer.
  • the method may include steps of:
  • Step S201 a copper heat sink and a ceramic substrate having a mounting hole are provided;
  • Step S202 the ceramic substrate is disposed on the copper heat sink and a copper-oxygen eutectic layer is formed between the ceramic substrate and the copper heat sink by eutectic welding;
  • Step S203 a positive electrode and a negative electrode are provided on a surface of the ceramic substrate;
  • Step S204 an LED chip is disposed on the copper heat sink and within the mounting hole; Step S205: the LED chip is electrically connected with the positive and negative electrodes; and
  • Step S206 the LED chip is covered with a fluorescent substance layer.
  • the step S206 may include: a mixture including fluorescent powders and an epoxy resin is filled in the mounting hole, and the mixture is cured.
  • the method may further include a step of oxidizing a surface of the copper heat sink on which the ceramic substrate is to be disposed before the eutectic welding.
  • the oxidizing step may be performed for about 10 minutes to about 60 minutes under a condition of: a temperature of about 500 Celsius degree to about 1000 Celsius degree and an oxygen content of about 50 ppm to about 1000 ppm.
  • the eutectic welding may be performed by heating the ceramic substrate and the copper heat sink for about 10 minutes to about 60 minutes at a temperature of about 1065 Celsius degree to about 1080 Celsius degree under a presence of nitrogen.
  • the method may further include a step of forming a first nickel-gold alloy layer between the copper heat sink and the LED chip.
  • the method may further include steps of: forming a second nickel-gold alloy layer on a surface of the positive electrode, and forming a third nickel-gold alloy layer on a surface of the negative electrode.
  • the mounting hole may be formed during the molding process of the ceramic substrate, or formed by punching or cutting the ceramic substrate after the ceramic substrate is formed, without particular limits in the present disclosure.
  • the positive and negative electrodes may be formed on the ceramic substrate by screen printing; the LED chip may be welded on the copper heat sink and within the mounting hole; and the first, second and third nickel-gold alloy layers may be formed by conventional deposition methods, like physic vapor deposition (PVD).
  • PVD physic vapor deposition
  • the step S205 may be performed by using a gold wire to connect the LED chip with the positive and negative electrodes, without particular limits in the present disclosure.
  • a ceramic substrate having a thickness of 0.1 millimeters was punched and cut by a laser to form a mounting hole in the ceramic substrate.
  • a copper sheet having a thickness of 0.1 millimeters was oxidized for 60 minutes at a temperature of 800 Celsius degree under an oxygen content of 100 ppm.
  • the ceramic substrate was disposed on the copper sheet and heated for 30 minutes at a temperature of 1072 Celsius degree in the presence of nitrogen, and then cooled to room temperature.
  • Positive and negative copper electrodes were disposed on a surface of ceramic substrate by screen printing, and then the ceramic substrate was sintered for 10 minutes at a temperature of 800 Celsius degree in the presence of nitrogen.
  • a first Ni-Au layer was deposited on a surface of copper sheet in the mounting hole, and second and third Ni-Au layers were deposited on surfaces of the positive and negative copper electrodes respectively.
  • a LED chip having a power of 2 W was welded on the first Ni-Au layer by a solid phase crystallization process.
  • the LED chip was connected with the positive and negative electrodes via gold wires.
  • a mixture of fluorescent powders and an epoxy resin was filled in the mounting hole to cover the LED chip with a fluorescent substance layer, thus obtaining a light emitting assembly.
  • the positive and negative electrodes of the resulted light emitting assembly were connected to an isolated drive power supply, obtaining a product Al.
  • a ceramic substrate having a thickness of 2 millimeters was punched and cut by a laser to form a mounting hole in the ceramic substrate.
  • a copper sheet having a thickness of 100 millimeters was oxidized for 60 minutes at a temperature of 800 Celsius degree under an oxygen content of 100 ppm.
  • the ceramic substrate was disposed on the copper sheet and heated for 30 minutes at a temperature of 1072 Celsius degree in the presence of nitrogen, and then cooled to room temperature.
  • a copper layer was formed on a surface of ceramic substrate by PVD.
  • a layer of photosensitive printing ink was covered on the copper layer, then exposed and developed to expose a predetermined part of the copper layer. Finally the photosensitive printing ink was removed, and then the remaining part of the copper layer was removed by immersing the copper layer into a copper etching solution, thus forming positive and negative copper electrodes on a surface of the ceramic substrate.
  • a first Ni-Au layer was deposited on a surface of the copper sheet in the mounting hole, and second and third Ni-Au layers were deposited on surfaces of the positive and negative copper electrodes respectively.
  • a LED chip having a power of 2 W was welded on the first Ni-Au layer by a solid phase crystallization process.
  • the LED chip was connected with the positive and negative electrodes via gold wires.
  • a mixture of fluorescent powders and an epoxy resin was filled in the mounting hole to cover the LED chip with a fluorescent substance layer, thus obtaining a light emitting assembly.
  • the positive and negative electrodes of the resulted light emitting assembly were connected to an isolated drive power supply, obtaining a product A2.
  • a ceramic substrate was punched and cut by a laser to form a mounting hole in the ceramic substrate.
  • a first electrode was formed on a first surface of the ceramic substrate by printing, and then the ceramic substrate was sintered for 10 minutes at a temperature of 800 Celsius degree in the presence of nitrogen, then cooled to room temperature.
  • a second surface of the ceramic substrate was bonded with a copper heat sink via a heat conductive rubber.
  • a second electrode was formed on the second surface of the ceramic substrate by screen printing, and then the ceramic substrate was sintered for 10 minutes at a temperature of 800 Celsius degree in the presence of nitrogen.
  • a first Ni-Au layer was deposited on a surface of copper heat sink in the mounting hole, and second and third Ni-Au layers were deposited on surfaces of the first and second copper electrodes respectively.
  • a LED chip having a power of 2 W was welded on the first Ni-Au layer by a solid phase crystallization process.
  • the LED chip was connected with the first and second electrodes via gold wires.
  • a mixture of fluorescent powders and an epoxy resin was filled in the mounting hole to cover the LED chip with a fluorescent substance layer, thus obtaining a light emitting assembly.
  • the first and second electrodes of the resulted light emitting assembly were connected to an isolated drive power supply, obtaining a product Bl.
  • a circuit was formed on a first surface of a direct bond copper (DBC) plate having a mounting hole by a process including steps of: film-posting, exposing, developing and etching.
  • DBC direct bond copper
  • a first Ni-Au layer was deposited in the mounting hole, and second and third Ni-Au layers were deposited on positive and negative electrodes formed on the DBC plate.
  • a LED chip having a power of 2 W was welded on a first surface of the DBC plate via a solid phase crystallization process.
  • a second surface of the DBC plate was connected to a copper heat sink via eutectic soldering.
  • the LED chip was connected with the positive and negative electrodes via gold wires.
  • a retaining wall was formed on the DBC plate, and then a mixture of fluorescent powders and an epoxy resin was filled in the retaining wall to cover the LED chip with a fluorescent substance layer.
  • the positive and negative electrodes were connected with an isolated drive power supply, forming a product B2.
  • thermocouple K type
  • Tc a temperature of the heat dissipating pad
  • the light emitting assembly according to embodiments of the present disclosure has better thermal shock resistances and reliability.
  • the light emitting assembly according to embodiments of the present disclosure has a Tj of lower than 60 Celsius degree, therefore obtaining a higher luminous efficiency and a longer service life.
  • product Bl has a lower reliability
  • product B2 has a lower luminous efficiency and shorter service life.

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  • Led Device Packages (AREA)

Abstract

L'invention concerne un ensemble électroluminescent et un procédé de préparation de l'ensemble électroluminescent. L'ensemble électroluminescent (100) comprend : un dissipateur de chaleur en cuivre (1) ; un substrat en céramique (2) doté d'un orifice de montage (6) ; une couche eutectique de cuivre-oxygène (7) formée entre le dissipateur de chaleur en cuivre (1) et le substrat en céramique (2) ; une électrode positive (31) et une électrode négative (32) disposées sur une surface du substrat en céramique (2) ; une puce de LED (4) disposée sur le dissipateur de chaleur en cuivre (1) et à l'intérieur de l'orifice de montage (6), et reliée électriquement avec les électrodes positive et négative (31, 32) ; et une couche de substance fluorescente (5) couvrant la puce de LED (4).
PCT/CN2013/088692 2012-12-21 2013-12-05 Ensemble électroluminescent et procédé de préparation de celui-ci Ceased WO2014094547A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201210559347.0A CN103887396A (zh) 2012-12-21 2012-12-21 一种led芯片直接焊接到铜热沉表面的发光组件及其制备方法
CN201210559347.0 2012-12-21

Publications (1)

Publication Number Publication Date
WO2014094547A1 true WO2014094547A1 (fr) 2014-06-26

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Application Number Title Priority Date Filing Date
PCT/CN2013/088692 Ceased WO2014094547A1 (fr) 2012-12-21 2013-12-05 Ensemble électroluminescent et procédé de préparation de celui-ci

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CN (1) CN103887396A (fr)
WO (1) WO2014094547A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104993035B (zh) * 2015-07-30 2018-08-17 厦门大学 一种暖白光led发光装置
CN105914185B (zh) * 2016-06-21 2018-07-31 华中科技大学 一种碳化硅功率器件的封装结构及封装方法
CN106992127B (zh) * 2017-04-19 2020-10-20 中国电子科技集团公司第二十四研究所 一种极少产生焊料表面悬浮氧化物颗粒的共晶贴片方法

Citations (4)

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US20060076571A1 (en) * 2004-09-24 2006-04-13 Min-Hsun Hsieh Semiconductor light-emitting element assembly
CN2890611Y (zh) * 2006-04-19 2007-04-18 华宏光电子(深圳)有限公司 大功率单个晶片led与大功率多个晶片led组合的照明灯
US20100288537A1 (en) * 2009-05-15 2010-11-18 High Conduction Scientific Co., Ltd. Circuit board module and method of making the same
WO2011149065A1 (fr) * 2010-05-27 2011-12-01 京セラ株式会社 Carte de circuit imprimé et dispositif électronique doté d'une telle carte

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Publication number Priority date Publication date Assignee Title
FR2692887B1 (fr) * 1992-06-29 1996-11-29 Alsthom Cge Alcatel Procede pour realiser une liaison entre du cuivre et un substrat pour l'electronique de puissance en ceramique non oxyde.
JP4789671B2 (ja) * 2006-03-28 2011-10-12 京セラ株式会社 発光素子用配線基板ならびに発光装置
CN101764121B (zh) * 2010-01-08 2012-12-05 湖南大学 层间绝缘叠层复合材料及其制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060076571A1 (en) * 2004-09-24 2006-04-13 Min-Hsun Hsieh Semiconductor light-emitting element assembly
CN2890611Y (zh) * 2006-04-19 2007-04-18 华宏光电子(深圳)有限公司 大功率单个晶片led与大功率多个晶片led组合的照明灯
US20100288537A1 (en) * 2009-05-15 2010-11-18 High Conduction Scientific Co., Ltd. Circuit board module and method of making the same
WO2011149065A1 (fr) * 2010-05-27 2011-12-01 京セラ株式会社 Carte de circuit imprimé et dispositif électronique doté d'une telle carte

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