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WO2014080705A1 - Appareil électroluminescent, son procédé de fabrication, appareil d'éclairage et phare - Google Patents

Appareil électroluminescent, son procédé de fabrication, appareil d'éclairage et phare Download PDF

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Publication number
WO2014080705A1
WO2014080705A1 PCT/JP2013/077627 JP2013077627W WO2014080705A1 WO 2014080705 A1 WO2014080705 A1 WO 2014080705A1 JP 2013077627 W JP2013077627 W JP 2013077627W WO 2014080705 A1 WO2014080705 A1 WO 2014080705A1
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WIPO (PCT)
Prior art keywords
light
light emitting
phosphor
emitting unit
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/077627
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English (en)
Japanese (ja)
Inventor
克彦 岸本
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Sharp Corp
Original Assignee
Sharp Corp
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Filing date
Publication date
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Publication of WO2014080705A1 publication Critical patent/WO2014080705A1/fr
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Ceased legal-status Critical Current

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S8/00—Lighting devices intended for fixed installation
    • F21S8/02—Lighting devices intended for fixed installation of recess-mounted type, e.g. downlighters
    • F21S8/026—Lighting devices intended for fixed installation of recess-mounted type, e.g. downlighters intended to be recessed in a ceiling or like overhead structure, e.g. suspended ceiling
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
    • F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
    • F21S41/141—Light emitting diodes [LED]
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
    • F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
    • F21S41/16—Laser light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
    • F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
    • F21S41/176—Light sources where the light is generated by photoluminescent material spaced from a primary light generating element
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S8/00—Lighting devices intended for fixed installation
    • F21S8/04—Lighting devices intended for fixed installation intended only for mounting on a ceiling or the like overhead structures
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2101/00—Point-like light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/30—Semiconductor lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0005—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being of the fibre type
    • G02B6/0008—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being of the fibre type the light being emitted at the end of the fibre
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms

Definitions

  • the present invention relates to a light-emitting device that uses fluorescence generated by irradiating excitation light to a light-emitting unit including a phosphor as illumination light, a method for manufacturing the same, an illumination device including the light-emitting device, a headlamp, and the like.
  • LEDs light emitting diodes
  • LDs semiconductor lasers
  • the semiconductor light-emitting device includes a semiconductor light-emitting element and a phosphor layer containing a phosphor excited by excitation light from the semiconductor light-emitting element, and the phosphor layer is a region of an optical path cross section of the excitation light.
  • a heat dissipating material having a thermal conductivity coefficient higher than that of the phosphor layer is disposed in contact with a part of the phosphor layer.
  • the above-described conventional technique has a problem in that no consideration is given to the relationship between the heat generated in the phosphor contained in the light emitting portion and the concentration distribution of the phosphor inside the light emitting portion.
  • the concentration of the phosphor in the phosphor layer is low in the vicinity of the semiconductor light emitting element and high in the region far from the semiconductor light emitting element. For this reason, the density
  • the heat generated inside the light emitting part is mainly exhausted from the heat radiating material, but the heat generated in the phosphor existing in a region far from the heat radiating material is light emission having a lower thermal conductivity than the heat radiating material. It is necessary to conduct heat throughout the club.
  • the present invention has been made in view of the above-described conventional problems, and its purpose is to quickly exhaust heat generated in the phosphor and to suppress heat generation of the light emitting unit due to the heat generated in the phosphor. It is to provide a light-emitting device that can be used.
  • a light-emitting device includes a light-emitting portion including a phosphor, a heat dissipation member for exhausting heat generated from the light-emitting portion, and the light-emitting portion.
  • An excitation light source that generates excitation light that excites the phosphor, wherein the light emitting unit and the heat dissipation member are thermally joined, and the concentration of the phosphor contained in the light emitting unit is The heat radiation member side is larger.
  • a method for manufacturing a light-emitting device includes a light-emitting portion including a phosphor, a heat dissipating member that exhausts heat generated from the light-emitting portion, and the light-emitting portion.
  • An excitation light source that generates excitation light that excites the contained phosphor, and a sealant particle having an average particle size that is 10 times or more the average particle size of the phosphor,
  • a light source installation step of installing the excitation light source at a spatially separated position with respect to the light emitting unit and the heat dissipation member
  • the region where the phosphor concentration in the light emitting portion formed in the swinging step is high is the region on the heat radiating member side of the light emitting portion, The light emitting unit and the heat radiating member are thermally coupled.
  • FIG. 4 is a diagram illustrating a concentration distribution of a phosphor inside a light emitting unit with respect to the headlamp, wherein (a) illustrates an example of the concentration distribution of the phosphor, and (b) illustrates another concentration distribution of the phosphor. (C) shows another example of the concentration distribution of the phosphor.
  • FIGS. 1 to 11 An embodiment of the present invention will be described with reference to FIGS. 1 to 11 as follows. Descriptions of configurations other than those described in the following specific embodiments may be omitted as necessary, but are the same as those configurations when described in other embodiments. For convenience of explanation, members having the same functions as those shown in each embodiment are given the same reference numerals, and the explanation thereof is omitted as appropriate.
  • FIG. 1 is a diagram illustrating an example of a lighting device according to an embodiment of the present invention.
  • an automotive headlamp (light emitting device, illuminating device, headlamp) 1 will be described as an example.
  • the lighting device of the present invention may be realized as a headlamp of a vehicle other than an automobile or a moving object (for example, a human, a ship, an aircraft, a submersible craft, a rocket), or may be realized as another lighting device. Also good. Examples of other lighting devices include a searchlight, a projector, an indoor lighting fixture, and an outdoor lighting fixture.
  • the headlamp 1 may satisfy the light distribution characteristic standard of the traveling headlamp (high beam), or may satisfy the light distribution characteristic standard of the passing headlamp (low beam).
  • FIG. 1 is a cross-sectional view showing the configuration of the headlamp 1.
  • the headlamp 1 includes a semiconductor laser array (excitation light source) 2, an aspherical lens 4, an optical fiber 5, a ferrule 6, a light emitting unit 7, a reflecting mirror 8, and a transparent plate 9.
  • a housing 10 an extension 11, a lens 12, a heat conducting member (heat radiating member) 13, and a cooling unit 14.
  • FIG. 2 is a diagram showing a structure in which the light emitting unit 7 and the heat conducting member 13 are joined (adhered).
  • the heat conductive member 13 and the light emitting unit 7 are described as being bonded (adhered) using an adhesive, but the bonding method between the heat conductive member 13 and the light emitting unit 7 is bonding. For example, fusion may be used.
  • the semiconductor laser array 2 functions as an excitation light source that emits excitation light, and includes a plurality of semiconductor lasers (excitation light sources) 3 on a substrate. Laser light as excitation light is oscillated from each of the semiconductor lasers 3. It is not always necessary to use a plurality of semiconductor lasers 3 as an excitation light source, and only one semiconductor laser 3 may be used. However, in order to obtain a high-power laser beam, it is preferable to use a plurality of semiconductor lasers 3. Easy.
  • the semiconductor laser 3 has one light emitting point in one chip, for example, oscillates a laser beam of 405 nm (blue violet), has an output of 1.0 W, an operating voltage of 5 V, and a current of 0.6 A. It is enclosed in a package with a diameter of 5.6 mm.
  • the laser light oscillated by the semiconductor laser 3 is not limited to 405 nm, and may be any laser light having a peak wavelength in a wavelength range of 380 nm to 470 nm. If a high-quality short-wavelength semiconductor laser that oscillates laser light having a wavelength smaller than 380 nm can be manufactured, the laser light having a wavelength smaller than 380 nm is oscillated as the semiconductor laser 3 of the present embodiment.
  • the semiconductor laser 3 is enclosed in a package having a diameter of 5.6 mm. However, a package having a diameter of 9 mm or any other package may be used. In that case, a package with low thermal resistance is preferable. A plurality of semiconductor lasers 3 (chips) may be enclosed in one package. Furthermore, in the present embodiment, a semiconductor laser is used as an excitation light source, but a light emitting diode can be used instead of the semiconductor laser.
  • the excitation light source emits laser light as in the present embodiment, and irradiation is performed with high light output and high light density
  • the excitation light does not necessarily have to be irradiated through the heat conducting member 13. For example, in FIG.
  • excitation light may be irradiated on the side of the laser light irradiation surface (excitation light irradiation surface) 7 a of the light emitting unit 7 from the upper side or the lower side with respect to the paper surface.
  • the heat conducting member 13 does not necessarily have translucency as in the present embodiment.
  • the aspherical lens 4 is a lens for causing laser light (excitation light) oscillated from the semiconductor laser 3 to enter an incident end 5 b that is one end of the optical fiber 5.
  • As the aspheric lens 4 FLKN1 405 manufactured by Alps Electric can be used.
  • the shape and material of the aspherical lens 4 are not particularly limited as long as the lens has the above-described function. However, it is preferable that the aspherical lens 4 is a material having high transmittance near 405 nm that is the wavelength of excitation light and good heat resistance.
  • the optical fiber 5 is a light guide member that guides the laser light oscillated by the semiconductor laser 3 to the light emitting unit 7 and is a bundle of a plurality of optical fibers.
  • the optical fiber 5 has a plurality of incident end portions 5b that receive the laser light and a plurality of emission end portions 5a that emit the laser light incident from the incident end portion 5b.
  • the plurality of emission end portions 5 a emit laser beams to different regions on the laser beam irradiation surface 7 a of the light emitting unit 7.
  • the emission end portions 5a of the plurality of optical fibers 5 are arranged side by side in a plane parallel to the laser light irradiation surface 7a.
  • the light intensity distribution in the light intensity distribution of the laser light emitted from the emission end portion 5a is the highest (the central portion of the irradiation region (the maximum light intensity portion formed by each laser light on the laser light irradiation surface 7a). )) Is emitted to different portions of the laser light irradiation surface 7a of the light emitting portion 7, and therefore, the laser light irradiation surface 7a of the light emitting portion 7 is irradiated in a two-dimensionally distributed manner. be able to.
  • the optical fiber 5 does not necessarily have to be a bundle of a plurality of optical fibers (that is, a configuration including a plurality of emission end portions 5a), and there may be one emission end portion 5a.
  • the emission end portion 5a may be in contact with the laser light irradiation surface 7a, or may be disposed at a slight interval.
  • the laser light emitted from the emission end 5a and spreading in a conical shape is irradiated to the laser light irradiation surface 7a. It is preferable to be determined as follows.
  • the optical fiber 5 has a two-layer structure in which an inner core is covered with a clad having a refractive index lower than that of the core.
  • the core is mainly composed of quartz glass (silicon oxide) having almost no absorption loss of laser light
  • the clad is composed mainly of quartz glass or a synthetic resin material having a refractive index lower than that of the core.
  • the optical fiber 5 is made of quartz having a core diameter of 200 ⁇ m, a cladding diameter of 240 ⁇ m, and a numerical aperture NA of 0.22.
  • the structure, thickness, and material of the optical fiber 5 are limited to those described above. Instead, the cross section perpendicular to the long axis direction of the optical fiber 5 may be rectangular.
  • the optical fiber 5 since the optical fiber 5 has flexibility, the arrangement of the emission end portion 5a with respect to the laser light irradiation surface 7a of the light emitting portion 7 can be easily changed. Therefore, the emission end portion 5a can be arranged along the shape of the laser light irradiation surface 7a of the light emitting portion 7, and the laser light can be mildly irradiated over the entire surface of the laser light irradiation surface 7a of the light emitting portion 7. .
  • the optical fiber 5 has flexibility, the relative positional relationship between the semiconductor laser 3 and the light emitting unit 7 can be easily changed. Further, by adjusting the length of the optical fiber 5, the semiconductor laser 3 can be installed at a position away from the light emitting unit 7.
  • the degree of freedom in designing the headlamp 1 can be increased, for example, the semiconductor laser 3 can be installed at a position where it can be easily cooled or replaced. That is, the positional relationship between the incident end portion 5b and the emitting end portion 5a can be easily changed, and the positional relationship between the semiconductor laser 3 and the light emitting portion 7 can be easily changed.
  • the degree of freedom can be increased.
  • a member other than the optical fiber or a combination of the optical fiber and another member may be used as the light guide member.
  • one or a plurality of light guide members having a truncated cone shape (or a truncated pyramid shape) having a laser beam incident end and an emission end may be used.
  • the ferrule 6 holds the plurality of emission end portions 5 a of the optical fiber 5 in a predetermined pattern with respect to the laser light irradiation surface of the light emitting unit 7.
  • the ferrule 6 may be formed with holes for inserting the emission end portion 5a in a predetermined pattern, and can be separated into an upper part and a lower part, and is formed on the upper and lower joint surfaces, respectively.
  • the exit end portion 5a may be sandwiched by a groove.
  • the ferrule 6 may be fixed to the reflecting mirror 8 by a rod-like or cylindrical member extending from the reflecting mirror 8, or may be fixed to the heat conducting member 13.
  • the material of the ferrule 6 is not specifically limited, For example, it is stainless steel.
  • a plurality of ferrules 6 may be arranged for one light emitting unit 7.
  • the ferrule 6 can be omitted. However, it is preferable to provide the ferrule 6 in order to accurately fix the relative position of the emission end portion 5a to the laser light irradiation surface 7a.
  • the light emitting part (wavelength converting member) 7 emits light upon receiving the laser light emitted from the emission end part 5a, and includes a phosphor LP that emits light upon receiving the laser light.
  • the phosphor LP is dispersed inside a low melting point glass as a phosphor holding substance (sealing agent).
  • the light emitting section 7 is manufactured by mixing a low melting point glass frit (sealing agent particles) and a phosphor.
  • a glass having a low melting point glass (sealing agent) made into fine particles having a predetermined particle diameter is called a glass frit.
  • the ratio of the low melting point glass frit and the phosphor is about 10: 1 by weight or volume.
  • the phosphor-holding material is not limited to a low-melting glass frit or the like, and may be a glass material such as a so-called organic-inorganic hybrid glass or an inorganic glass that does not have a low melting point.
  • concentration gradient exists in the phosphor in the light emitting unit 7 of the present embodiment by the manufacturing method described later, the concentration gradient of the phosphor will be described later.
  • the phosphor LP is, for example, a nitride-based or oxynitride-based phosphor or a group III-V compound semiconductor nanoparticle phosphor, and any one or more of phosphors emitting blue, green, and red light are included. Dispersed in low melting glass. Since the semiconductor laser 3 oscillates 405 nm (blue-violet) laser light, a plurality of colors are mixed and white light is generated when the light emitting unit 7 is irradiated with the laser light. Therefore, it can be said that the light emitting portion 7 is a wavelength conversion material.
  • the semiconductor laser 3 may oscillate a 450 nm (blue) laser beam (or a so-called “blue” laser beam having a peak wavelength in a wavelength range of 440 nm to 490 nm).
  • the phosphor is a yellow phosphor or a mixture of a green phosphor and a red phosphor.
  • a yellow phosphor is a phosphor that emits light having a peak wavelength in a wavelength range of 560 nm to 590 nm.
  • the green phosphor is a phosphor that emits light having a peak wavelength in a wavelength range of 510 nm or more and 560 nm or less.
  • the red phosphor is a phosphor that emits light having a peak wavelength in a wavelength range of 600 nm to 680 nm.
  • the light emitting unit 7 preferably includes a nitride-based, oxynitride-based phosphor, or a group III-V compound semiconductor nanoparticle phosphor as the phosphor LP. These materials are highly resistant to extremely strong laser light (output and light density) emitted from the semiconductor laser 3, and are optimal for a laser illumination light source.
  • sialon phosphor As a typical oxynitride phosphor, there is a so-called sialon phosphor.
  • a sialon phosphor is a substance in which part of silicon atoms in silicon nitride is replaced with aluminum atoms and part of nitrogen atoms is replaced with oxygen atoms. It can be made by dissolving alumina (Al 2 O 3 ), silica (SiO 2 ), rare earth elements and the like in silicon nitride (Si 3 N 4 ).
  • one of the features of semiconductor nanoparticle phosphors is that even if the same compound semiconductor (for example, indium phosphorus: InP) is used, the emission color can be changed by the quantum size effect by changing the particle diameter to nanometer size. It is a point that can be changed.
  • InP emits red light when the particle size is about 3 to 4 nm (here, the particle size was evaluated with a transmission electron microscope (TEM)).
  • this semiconductor nanoparticle phosphor is based on a semiconductor, it has a short fluorescence lifetime and is characterized by being highly resistant to high-power excitation light because it can quickly emit the excitation light power as fluorescence. This is because the emission lifetime of the semiconductor nanoparticle phosphor is about 10 nanoseconds, which is five orders of magnitude smaller than that of a normal phosphor material having a rare earth as the emission center.
  • the emission lifetime is short, the absorption of the laser beam and the emission of the phosphor can be repeated quickly. As a result, high efficiency can be maintained with respect to strong laser light, and heat generation from the phosphor can be reduced.
  • the concentration of the light emitting unit 7 is referred to as the concentration of the light emitting unit, and the unit is mg / cm 3 (milligram / cubic centimeter).
  • the concentration range of the light emitting unit 7 of the present embodiment is, for example, about 100 to 2000 mg / cm 3 .
  • the particle size of the low melting point glass frit is made larger than the particle size of the phosphor LP in the range of about 10 times to about 50 times, and as described later, the phosphor LP and the low melting point glass frit Are mixed, shaken in a mold, and then heated and sintered to generate a concentration gradient of the phosphor LP dispersed in the low-melting-point glass. If the mixed powder of the low melting glass frit and the phosphor LP is put into the mold and then shaken, the degree of the concentration gradient can be adjusted.
  • the low-melting glass frit is composed of particles of the phosphor LP. It looks as if it is floating in a liquid. For this reason, by further rocking the mold, it is possible to form a region where the concentration of the phosphor LP is high and a region where the concentration of the phosphor LP is low inside the light emitting portion 7.
  • the particle size of the phosphor LP is preferably 1 ⁇ m or more and 50 ⁇ m or less. From the viewpoint of luminous efficiency, the particle size of the phosphor LP is preferably as large as possible, and high luminous efficiency can be obtained by using the phosphor LP of at least 10 ⁇ m or more.
  • the particle size of the phosphor LP is too large, it cannot be dispersed well in the sealing material, and therefore it is preferably 30 ⁇ m or less.
  • the particle size of the low melting glass frit is preferably 100 ⁇ m or more and 500 ⁇ m or less, and the low melting glass frit having a particle size about 20 times larger than the average particle size of the phosphor LP used is used. More preferably.
  • FIG. 3 shows an example of the concentration distribution of the phosphor LP inside the light emitting unit 7 with respect to the headlamp 1.
  • 3A shows an example of the concentration distribution of the phosphor LP
  • FIG. 3B shows another example of the concentration distribution of the phosphor LP
  • FIG. 3C shows the phosphor Another example of LP concentration distribution is shown.
  • FIG. 3 (a) shows a form in which the concentration of the phosphor LP gradually changes (smoothly and steplessly) in the vertical direction with respect to the paper surface.
  • This form can be easily manufactured, for example, by a manufacturing method to be described later using a difference in particle size between the sealing agent particles for sealing the phosphor and the phosphor particles. Therefore, according to the method, the concentration gradient of the light emitting part can be formed at once (and easily) as compared with a mode in which the light emitting part is configured by a plurality of layers to be described later. Therefore, the manufacturing process of the light emitting part can be simplified.
  • the form in which the concentration of the phosphor LP gradually decreases from the lower side to the upper side with respect to the paper surface is shown.
  • the distribution of the phosphor LP inside the light emitting unit 7 is not limited to the distribution shown in FIG.
  • the concentration of the phosphor LP may gradually decrease toward the opposite surface.
  • the concentration of the phosphor LP is higher as it is closer to the surface to which the heat conducting member 13 of the light emitting unit 7 is bonded, and the surface of the light emitting unit 7 on which the excitation light is irradiated (laser light irradiation). It is conceivable that the height is closer to the side surface of the surface 7a.
  • FIG. 3B shows a form in which the concentration of the phosphor LP changes stepwise (stepped or stepped).
  • the concentration of the phosphor LP changes in three levels of “large”, “medium”, and “small” in the vertical direction with respect to the paper surface.
  • a plurality of phosphor layers having different concentrations are formed (laminated) in the order of the desired concentration on the surface of the heat conducting member 13 by a manufacturing method described later, whereby a plurality of phosphors are arranged in the order of the desired concentration. Since each of the layers can be laminated, the effect of the present application can be achieved even when the concentration gradient cannot be naturally given as shown in FIG.
  • FIG. 3C shows a mode in which a layer that does not contain the phosphor LP (in the present embodiment, see also the transparent plate 15 and FIG. 5) is provided on the surface of the light emitting unit 7.
  • the light emitting side surface of the light emitting unit 7 is covered (covered) with a light transmitting layer (transparent plate 15) that does not contain the phosphor (particles) that generates heat.
  • transparent plate 15 transparent plate 15
  • the heat dissipation effect can be enhanced.
  • the shape and size of the light emitting unit 7 are, for example, a cylindrical shape having a diameter of 3.2 mm and a thickness of 1 mm, and the laser light emitted from the emission end 5a is applied to the laser light irradiation surface 7a that is the bottom surface of the cylinder. Receive light.
  • the light emission part 7 may not be a column shape but a rectangular parallelepiped.
  • it is a rectangular parallelepiped of 3 mm ⁇ 1 mm ⁇ 1 mm.
  • the area of the laser light irradiation surface that receives the laser light from the semiconductor laser 3 is 3 mm 2 .
  • the light distribution pattern (light distribution) of a vehicle headlamp that is legally regulated in Japan is narrow in the vertical direction and wide in the horizontal direction. By making the cross section substantially rectangular), the light distribution pattern can be easily realized.
  • the required thickness of the light emitting portion 7 varies according to the ratio of the phosphor-holding substance and the phosphor in the light emitting portion 7. If the phosphor content in the light emitting unit 7 is increased, the efficiency of conversion of laser light into white light is increased, so that the thickness of the light emitting unit 7 can be reduced. If the light emitting portion 7 is made thin, the heat dissipation effect to the heat conducting member 13 is also enhanced. However, if the light emitting portion 7 is made too thin, there is a possibility that the laser light is not converted into fluorescence and emitted outside, and absorption of excitation light by the phosphor From this point of view, the thickness of the light emitting part is preferably at least 10 times the particle size of the phosphor.
  • the thickness of the light-emitting portion when using the nanoparticle phosphor should be 0.01 ⁇ m or more, but considering the ease of the manufacturing process such as dispersion in the sealing material, it is 10 ⁇ m or more. That is, 0.01 mm or more is preferable. On the other hand, if the thickness is too thick, a deviation from the focal point of the reflecting mirror 8 becomes large and the light distribution pattern is blurred.
  • the thickness of the light-emitting portion 7 using a nitride-based or oxynitride-based phosphor is preferably 0.2 mm or more and 5 mm or less.
  • the lower limit of the thickness is not limited to this.
  • the laser light irradiation surface 7a of the light emitting unit 7 is not necessarily a flat surface, and may be a curved surface. However, in order to suppress the reflection of the laser beam, the laser beam irradiation surface 7a is preferably a plane perpendicular to the optical axis of the laser beam.
  • the light emitting unit 7 is bonded (adhered) to the surface of the heat conducting member 13 opposite to the side irradiated with the laser light using an adhesive. ing.
  • the reflecting mirror 8 reflects the light emitted from the light emitting unit 7 to form a light beam that travels within a predetermined solid angle. That is, the reflecting mirror 8 reflects the light from the light emitting unit 7 to form a light beam that travels forward of the headlamp 1.
  • the reflecting mirror 8 is, for example, a curved (cup-shaped) member having a metal thin film formed on the surface thereof.
  • the transparent plate 9 is a transparent resin plate that covers the opening of the reflecting mirror 8.
  • the transparent plate 9 is preferably formed of a material that blocks the laser light from the semiconductor laser 3 and transmits white light (incoherent light) generated by converting the laser light in the light emitting unit 7. .
  • white light incoherent light
  • Most of the coherent laser light is converted into incoherent white light by the light emitting unit 7.
  • the laser beam can be prevented from leaking to the outside by blocking the laser beam with the transparent plate 9.
  • the transparent plate 9 may be used together with the heat conducting member 13 to fix the light emitting unit 7. That is, the light emitting unit 7 may be sandwiched between the heat conducting member 13 and the transparent plate 9 as in the present embodiment.
  • the transparent plate 9 functions as a fixing unit that fixes the relative positional relationship between the light emitting unit 7 and the heat conducting member 13.
  • the transparent plate 9 can also be abbreviate
  • the housing 10 forms the main body of the headlamp 1 and houses the reflecting mirror 8 and the like.
  • the optical fiber 5 passes through the housing 10, and the semiconductor laser array 2 is installed outside the housing 10.
  • the semiconductor laser array 2 generates heat when the laser light is oscillated, but the semiconductor laser array 2 can be efficiently cooled by being installed outside the housing 10. Therefore, deterioration of characteristics and thermal damage of the light emitting unit 7 due to heat generated from the semiconductor laser array 2 are prevented.
  • Extension 11 is provided on the front side of the reflecting mirror 8 to hide the internal structure of the headlamp 1 to improve the appearance of the headlamp 1 and enhance the sense of unity between the reflecting mirror 8 and the vehicle body. Yes.
  • the extension 11 is also a member having a metal thin film formed on the surface thereof, like the reflecting mirror 8.
  • the lens 12 is provided in the opening of the housing 10 and seals the headlamp 1.
  • the light generated by the light emitting unit 7 and reflected by the reflecting mirror 8 is emitted to the front of the headlamp 1 through the lens 12.
  • the heat conducting member 13 is a translucent member that is disposed on the side of the laser light irradiation surface 7a that is the surface irradiated with the excitation light in the light emitting unit 7 and receives the heat of the light emitting unit 7. Connected (in other words, so that heat energy can be exchanged). Specifically, as shown in FIG. 2, the light emitting unit 7 and the heat conducting member 13 are joined (adhered) using an adhesive.
  • the heat conducting member 13 is a plate-like member, one end of which is in thermal contact with the laser light irradiation surface 7 a of the light emitting unit 7, and the other end is thermally connected to the cooling unit 14. ing.
  • the heat conducting member 13 radiates heat generated from the light emitting unit 7 to the outside of the headlamp 1 while holding the minute light emitting unit 7 at the light emitting unit fixing position.
  • the thermal expansion coefficient of the heat conducting member 13 is preferably 4.6 ⁇ 10 ⁇ 6 / ° C. or less. . Further, the laser light emitted from the semiconductor laser 3 passes through the heat conducting member 13 and reaches the light emitting unit 7. Therefore, it is preferable that the heat conductive member 13 is made of a material having excellent translucency. In order to efficiently release the heat of the light emitting unit 7, the thermal conductivity of the heat conducting member 13 is preferably 20 W / mK or more. Further, the laser light emitted from the semiconductor laser 3 passes through the heat conducting member 13 and reaches the light emitting unit 7. Therefore, it is preferable that the heat conductive member 13 is made of a material having excellent translucency.
  • the material of the heat conducting member 13 is preferably sapphire (Al 2 O 3 ), aluminum nitride (AlN), magnesia (MgO), or gallium nitride (GaN) having a low coefficient of thermal expansion.
  • AlN aluminum nitride
  • MgO magnesia
  • GaN gallium nitride
  • the rate is 13.3 ⁇ 10 ⁇ 6 / ° C.
  • the thermal expansion coefficient of gallium nitride is 5.6 ⁇ 10 ⁇ 6 / ° C.
  • sapphire Al 2 O 3
  • magnesia MgO
  • gallium nitride GaN
  • spinel MgAl 2 O 4
  • the thickness of the heat conducting member 13 indicated by reference numeral 13c in FIG. 2 is preferably 0.3 mm or more and 5.0 mm or less. If the thickness is less than 0.3 mm, the light emitting unit 7 cannot sufficiently dissipate heat, and the light emitting unit 7 may be deteriorated. Further, if the thickness exceeds 5.0 mm, the increase in the cost of the member becomes larger than the effect of improving the heat conduction efficiency due to the increased thickness, which is not economical.
  • the heat conducting member 13 By bringing the heat conducting member 13 into contact with the light emitting portion 7 with an appropriate thickness, even when an extremely strong laser beam that emits more than 1 W is generated particularly in the light emitting portion 7, the heat generation is quick and efficient. It is possible to prevent heat emission and damage (deterioration) of the light emitting unit 7.
  • the heat conductive member 13 may be a plate-shaped member that is not bent, or may have a bent part or a curved part.
  • the portion to which the light emitting portion 7 is bonded is preferably flat (plate-shaped) from the viewpoint of adhesion stability.
  • the heat conductive member 13 may have a portion having a light transmitting property (light transmitting portion) and a portion having no light transmitting property (light shielding portion).
  • the light transmitting part is disposed so as to cover the laser light irradiation surface 7a of the light emitting part 7, and the light shielding part is disposed outside thereof.
  • the light shielding part may be a heat radiating part of metal (for example, copper or aluminum), or aluminum, silver, or other film that has an effect of reflecting illumination light is formed on the surface of the translucent member. May be.
  • the cooling unit 14 is a member that cools the heat conducting member 13, and is a heat radiating block having high thermal conductivity made of a metal such as aluminum or copper, for example. If the reflecting mirror 8 is made of metal, the reflecting mirror 8 may also serve as the cooling unit 14. Alternatively, the cooling unit 14 may be a cooling device that cools the heat conducting member 13 by circulating a cooling liquid therein, or a cooling device (fan) that cools the heat conducting member 13 by air cooling. May be. When the cooling unit 14 is realized as a metal lump, a plurality of heat radiation fins may be provided on the upper surface of the metal lump. With this configuration, the surface area of the metal lump can be increased, and heat dissipation from the metal lump can be performed more efficiently.
  • the cooling unit 14 is not essential for the headlamp 1, and the heat received by the heat conducting member 13 from the light emitting unit 7 may be naturally dissipated from the heat conducting member 13. By providing the cooling unit 14, it is possible to efficiently dissipate heat from the heat conducting member 13. In particular, when the amount of heat generated from the light emitting unit 7 is 3 W or more, the installation of the cooling unit 14 is effective.
  • the cooling unit 14 can be installed at a position away from the light emitting unit 7 by adjusting the length of the heat conducting member 13.
  • the cooling unit 14 is not limited to the configuration in which the cooling unit 14 is housed in the housing 10 as illustrated in FIG. 1, and the cooling unit 14 may be installed outside the housing 10 by passing through the housing 10. It becomes possible. Therefore, it can be installed at a position where it can be easily repaired or replaced when the cooling unit 14 breaks down, and the degree of freedom in designing the headlamp 1 can be increased.
  • FIG. 4A is a circuit diagram of an LED lamp (excitation light source) 21 which is an example of an excitation light source
  • FIG. 4B is a front view showing an appearance of the LED lamp 21.
  • the LED lamp 21 has a configuration in which an LED chip (excitation light source) 26 connected to an anode 22 and a cathode 23 is enclosed by an epoxy resin cap 20. As shown in FIG.
  • the LED chip 26 has a pn junction between a p-type semiconductor 131 and an n-type semiconductor 132, the anode 22 is connected to the p-side electrode 133, and the cathode 23 is connected to the n-side electrode 134. Connected.
  • the LED chip 26 is connected to the power source E via the resistor R.
  • a circuit is configured, and when power is supplied from the power source E to the LED chip 26, incoherent excitation light is generated near the pn junction.
  • the material of the LED chip 26 is a compound semiconductor such as indium gallium nitride (InGaN), gallium nitride (GaN), or aluminum gallium nitride (AlGaN) as a material that generates excitation light having a wavelength from the near ultraviolet region to the blue-violet region.
  • InGaN indium gallium nitride
  • GaN gallium nitride
  • AlGaN aluminum gallium nitride
  • Other materials include diamond (C) that emits excitation light having a wavelength in the near ultraviolet region, zinc selenide (ZnSe) that generates excitation light having a wavelength in the blue region, and wavelengths from the near ultraviolet region to the blue-violet region.
  • ZnO zinc oxide
  • GaAsP whose emission color is orange such as GaP, AlGaAs, and GaAsP whose emission color is red, and yellow light that is colored.
  • Compound semiconductors such as GaAsP and GaP, GaP whose emission color is green, SiC and GaN whose emission color is blue can be exemplified.
  • the LED chip 26 operates at a low voltage of about 2V to 4V, is small and light, has a fast response speed, has a long life, and has a low cost.
  • FIG. 4C schematically shows a circuit diagram of the semiconductor laser 3
  • FIG. 4D is a perspective view showing the basic structure of the semiconductor laser 3.
  • the semiconductor laser 3 has a configuration in which a cathode electrode 25, a substrate 116, a cladding layer 113, an active layer 111, a cladding layer 112, and an anode electrode 24 are laminated in this order.
  • the substrate 116 is a semiconductor substrate, and it is preferable to use GaN, sapphire, or SiC in order to obtain excitation light in the blue-violet region to the near-ultraviolet region for exciting the phosphor as in the present application.
  • a group IV semiconductor represented by a group IV semiconductor such as Si, Ge and SiC, GaAs, GaP, InP, AlAs, GaN, InN, InSb, GaSb and AlN Group V compound semiconductors, Group II-VI compound semiconductors such as ZnTe, ZeSe, ZnS and ZnO, oxide insulators such as ZnO, Al 2 O 3 , SiO 2 , TiO 2 , CrO 2 and CeO 2 , and SiN Any material of the nitride insulator is used.
  • the anode electrode 24 is for injecting current into the active layer 111 through the clad layer 112.
  • the cathode electrode 25 is for injecting current into the active layer 111 from the lower part of the substrate 116 through the clad layer 113.
  • the current is injected by applying a forward bias to the anode electrode 24 and the cathode electrode 25.
  • the active layer 111 has a structure sandwiched between the cladding layer 113 and the cladding layer 112.
  • a mixed crystal semiconductor made of AlInGaN is used to obtain excitation light in the blue-violet region to the near ultraviolet region.
  • a mixed crystal semiconductor mainly composed of Al, Ga, In, As, P, N, and Sb is used as an active layer / cladding layer of a semiconductor laser, and such a configuration may be used. Further, it may be composed of a II-VI compound semiconductor such as Zn, Mg, S, Se, Te and ZnO.
  • the active layer 111 is a region where light emission occurs due to the injected current, and the emitted light is confined in the active layer 111 due to a difference in refractive index between the cladding layer 112 and the cladding layer 113.
  • the active layer 111 is formed with a front side cleaved surface 114 and a back side cleaved surface 115 provided to face each other in order to confine light amplified by stimulated emission, and the front side cleaved surface 114 and the back side cleaved surface 115. Plays the role of a mirror.
  • the active layer 111 may form a multilayer quantum well structure.
  • a reflective film (not shown) for laser oscillation is formed on the back side cleaved surface 115 opposite to the front side cleaved surface 114, and the difference in reflectance between the front side cleaved surface 114 and the back side cleaved surface 115 is different.
  • the clad layer 113 and the clad layer 112 are made of n-type and p-type GaAs, GaP, InP, AlAs, GaN, InN, InSb, GaSb, and AlN, III-V group compound semiconductors, and ZnTe, ZeSe. , ZnS, ZnO, and other II-VI group compound semiconductors, and by applying a forward bias to the anode electrode 24 and the cathode electrode 25, current can be injected into the active layer 111. It has become.
  • each semiconductor layer such as the cladding layer 113, the cladding layer 112, and the active layer 111
  • MOCVD metal organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • CVD chemical vapor deposition
  • It can be configured using a general film forming method such as a laser ablation method or a sputtering method.
  • the film formation of each metal layer can be configured using a general film forming method such as a vacuum deposition method, a plating method, a laser ablation method, or a sputtering method.
  • the laser light oscillated from the semiconductor laser 3 is irradiated onto the phosphor LP included in the light emitting unit 7 so that electrons existing in the phosphor LP are excited from a low energy state to a high energy state (excited state). Is done. After that, since this excited state is unstable, the energy state of the electrons in the phosphor LP changes to the original low energy state after a certain time (between the energy state of the ground level or between the excited level and the ground level). Transition to the metastable level energy state of. Thus, the phosphor LP emits light when electrons excited to the high energy state transition to the low energy state.
  • the white light can be composed of a mixed color of three colors satisfying the principle of equal colors, or a mixed color of two colors satisfying the complementary color relationship, and the laser light oscillated from the semiconductor laser 3 based on this principle / relationship.
  • the white light can be generated by combining the color of the light and the color of the light emitted from the phosphor LP as described above.
  • the headlamp 1 excites the light emitting unit 7 including the phosphor LP, the heat conducting member 13 for exhausting heat generated from the light emitting unit 7, and the phosphor LP included in the light emitting unit 7. And a semiconductor laser 3 that generates excitation light.
  • the light emitting unit 7 and the heat conducting member 13 are thermally joined, while excitation light that excites the light emitting unit 7 is applied to the light emitting unit 7. Further, the concentration of the phosphor LP included in the light emitting unit 7 is higher on the heat conducting member 13 side.
  • produced with fluorescent substance LP contained in the light emission part 7 is exhausted through the heat conductive member 13. it can.
  • the concentration of the phosphor LP included in the light emitting unit 7 is higher on the heat conducting member 13 side, the concentration of the phosphor LP included in the light emitting unit 7 is on the heat conducting member 13 side. Compared with the configuration in which the direction is smaller, the heat generated in the phosphor LP included in the light emitting unit 7 can be quickly exhausted.
  • the heat generated in the phosphor LP in a region far from the heat conducting member 13 in the light emitting unit 7 needs to be transferred through the light emitting unit 7 (having a lower thermal conductivity than the heat conducting member 13). is there. For this reason, when the density
  • the concentration of the phosphor LP in the region near the heat conducting member 13 in the light emitting unit 7 is reduced so that the concentration of the phosphor LP having a large distance for heat transfer in the light emitting unit 7 is small.
  • the concentration is increased and the concentration of the phosphor LP in the far region is decreased. That is, according to said structure, since a lot of heat does not move a long distance in the light emission part 7, the light emission part 7 is not heated very much. Thereby, the effect that heat generated in the phosphor LP can be quickly exhausted and heat generation of the light emitting unit 7 due to the heat generated in the phosphor LP can be suppressed can be achieved.
  • the heat conducting member 13 may be translucent, and the light emitting section 7 may generate fluorescence when irradiated with excitation light that has passed through the heat conducting member 13.
  • the light emitting unit 7 is irradiated with the excitation light transmitted through the heat conducting member 13, that is, the excitation light is irradiated through the heat conducting member 13, so that the phosphor included in the light emitting unit 7 More heat is generated in the LP from the phosphor LP on the side closer to the heat conducting member 13 in the light emitting unit 7.
  • the heat generated by the high-concentration phosphor LP in the region near the heat conducting member 13 in the light emitting unit 7 is more quickly heated as compared with the configuration in which excitation light is not irradiated through the heat conducting member 13. Heat can be exhausted to the conductive member 13.
  • the semiconductor laser 3 is spatially separated from the light emitting unit 7 and the heat conducting member 13, the light emitting unit 7 and the heat conducting member 13 which are thermally integrated are Heat generated by the semiconductor laser 3 is not transmitted. Since the heat generated in the semiconductor laser 3 is not transmitted to the light emitting unit 7, the temperature rise of the light emitting unit 7 can be suppressed, and the performance of the light emitting unit 7 can be maximized.
  • FIG. 5 is a schematic view showing a configuration of a transmission type headlamp (light emitting device, illumination device, headlamp) 30 according to the present embodiment.
  • the headlamp 30 includes a semiconductor laser 3, a heat conducting member 13, a transparent plate (fixed portion) 15, a metal ring 19, a reflecting mirror 81, a substrate 82, and screws 83.
  • the light emitting unit 7 is sandwiched between the heat conducting member 13 and the transparent plate 15.
  • the reflecting mirror 81 has the same function as that of the reflecting mirror 8, but has a shape cut by a plane perpendicular to the optical axis in the vicinity of the focal position.
  • the material of the reflecting mirror 81 is not particularly limited, but considering the reflectance, it is preferable to produce a reflecting mirror using copper or SUS (stainless steel), and then apply silver plating, chromate coating, or the like.
  • the reflecting mirror 81 may be manufactured using aluminum and an antioxidant film may be provided on the surface, or a metal thin film may be formed on the surface of the resinous reflecting mirror body.
  • an opening is formed at the bottom of the reflecting mirror 81, and the light emitting unit 7 is disposed in the vicinity of the opening, and a part of the laser light applied to the light emitting unit 7 is inside the light emitting unit 7. It is designed to pass through.
  • the light emitting unit 7 is disposed in the vicinity of the opening formed at the bottom of the reflecting mirror 81, and a part of the laser light applied to the light emitting unit 7 passes through the inside of the light emitting unit 7.
  • the laser light passes through the inside of the light emitting unit 7 and the transmitted light is scattered by the phosphor particles contained in the light emitting unit 7, so that the transmitted light can be diffused in the reflecting mirror 81.
  • the metal ring 19 is a mortar-shaped ring having a shape near the focal position when the reflecting mirror 81 is a perfect reflecting mirror, and has a shape in which the bottom of the mortar is open.
  • the light emitting portion 7 is disposed in the bottom opening.
  • the surface of the mortar-shaped part of the metal ring 19 functions as a reflecting mirror, and a perfect reflecting mirror is formed by combining the metal ring 19 and the reflecting mirror 81. Therefore, the metal ring 19 is a partial reflecting mirror that functions as a part of the reflecting mirror.
  • the reflecting mirror 81 is referred to as a first partial reflecting mirror
  • the metal ring 19 is referred to as a second partial reflecting mirror having a portion near the focal position. Can do. A part of the fluorescence emitted from the light emitting unit 7 is reflected by the surface of the metal ring 19 and emitted to the front of the headlamp 30 as illumination light.
  • the material of the metal ring 19 is not particularly limited, but silver, copper, aluminum and the like are preferable in consideration of heat dissipation.
  • the metal ring 19 is silver or aluminum, it is preferable to provide a protective layer (chromate coat, resin layer, etc.) for preventing darkening and oxidation after finishing the mortar part to a mirror surface.
  • the metal ring 19 is copper, it is preferable to provide the above-mentioned protective layer after silver plating or aluminum vapor deposition.
  • the light emitting unit 7 is bonded to the heat conducting member 13 with an adhesive, and the metal ring 19 is also in contact with the heat conducting member 13. The effect of cooling the heat conducting member 13 is obtained by the metal ring 19 coming into contact with the heat conducting member 13. That is, the metal ring 19 also functions as a cooling unit for the heat conducting member 13.
  • a transparent plate 15 is sandwiched between the metal ring 19 and the reflecting mirror 81.
  • the transparent plate 15 is in contact with the surface opposite to the laser light irradiation surface 7 a of the light emitting unit 7, and has a role of suppressing the light emitting unit 7 from being peeled off from the heat conducting member 13. Since the depth of the mortar-shaped portion of the metal ring 19 substantially matches the height of the light emitting portion 7, the transparent plate 15 is kept in a state where the distance between the transparent plate 15 and the heat conducting member 13 is kept constant. 15 is in contact with the light emitting unit 7. Therefore, the light emitting unit 7 is not crushed by being sandwiched between the heat conducting member 13 and the transparent plate 15.
  • the transparent plate 15 may be made of any material as long as it has at least translucency, but preferably has a high thermal conductivity (20 W / mK or more) like the heat conductive member 13.
  • the transparent plate 15 preferably contains sapphire, gallium nitride, magnesia or diamond. In this case, the transparent plate 15 has a higher thermal conductivity than the light emitting unit 7, and the light emitting unit 7 can be cooled by efficiently absorbing the heat generated in the light emitting unit 7.
  • the thickness of the heat conducting member 13 and the transparent plate 15 is preferably about 0.3 mm or more and 5.0 mm or less. When the thickness is 0.3 mm or less, the strength to sandwich and fix the light emitting portion 7 and the metal ring 19 is not obtained, and when the thickness is 5.0 mm or more, excitation light (laser light) irradiated to the light emitting portion 7 or It becomes impossible to ignore that the light emitted from the light emitting portion 7 is absorbed by the heat conducting member 13 or the transparent plate 15, and the member cost increases.
  • substrate 82 can be functioned as a cooling part which cools the heat conductive member 13 by using a metal with high heat conductivity. Since the heat conducting member 13 is in full contact with the substrate 82, the cooling effect of the heat conducting member 13 and thus the light emitting unit 7 is enhanced by making the substrate 82 a metal such as iron or copper. Can do.
  • the metal ring 19 can be fixed to the heat conducting member 13 to some extent by the pressure generated by fixing the substrate 82 and the reflecting mirror 81 with the screws 83.
  • the metal ring 19 is securely fixed by a method such as bonding the metal ring 19 to the heat conducting member 13 with an adhesive or screwing the metal ring 19 to the substrate 82 with the heat conducting member 13 interposed therebetween. It is possible to avoid the risk that the light emitting portion 7 is peeled off by the movement of the metal ring 19.
  • the metal ring 19 may be any metal as long as it has a function as the above-described partial reflection mirror and can withstand the pressure when the reflection mirror 81 and the substrate 82 are fixed with the screws 83. There is no need.
  • the member serving as a substitute for the metal ring 19 may be one in which a metal thin film is formed on the surface of a resin ring that can withstand the pressure.
  • the headlamp 30 of this embodiment includes the reflecting mirror 81 having the light reflecting concave surface that reflects the fluorescence generated from the light emitting unit 7, and the light emitting unit 7 is formed in the bottom of the reflecting mirror 81. A part of the laser light irradiated to the light emitting unit 7 is transmitted through the inside of the light emitting unit 7. As a result, the laser light is transmitted through the light emitting unit 7 and the transmitted light is scattered by the phosphor particles contained in the light emitting unit 7, so that the transmitted light can be diffused in the reflecting mirror 81.
  • the light emitting unit 7 is sandwiched between the heat conducting member 13 and the transparent plate 18, so that the relative positional relationship between the light emitting unit 7 and the heat conducting member 13 is fixed. Therefore, even when the adhesiveness for bonding the light emitting unit 7 and the heat conducting member 13 is low, or even when a difference in thermal expansion coefficient occurs between the light emitting unit 7 and the heat conducting member 13, the light emitting unit 7 can be prevented from peeling off from the heat conducting member 13.
  • the fixing part that fixes the relative position of the light emitting part 7 to the heat conducting member 13 does not have to be a plate-like member, and is at least a surface (referred to as a fluorescence emitting surface) that faces the laser light irradiation surface 7a of the light emitting part 7. What is necessary is just to provide the press-contact surface which press-contacts in part, and the contact surface fixing
  • the relative position between the pressure contact surface and the heat conducting member 13 is fixed, and the pressure contact surface is in pressure contact with the fluorescence emission surface of the light emitting portion 7 (applying a certain pressure to contact the fluorescence emission surface), whereby the light emission portion 7. Can be fixed to the heat conducting member 13.
  • the laser downlight 200 is an illumination device installed on the ceiling of a structure such as a house or a vehicle, and uses fluorescence generated by irradiating the light emitting unit 7 with laser light emitted from the semiconductor laser 3 as illumination light. It is. Note that an illuminating device having the same configuration as that of the laser downlight 200 may be installed on the side wall or floor of the structure, and the installation location of the illuminating device is not particularly limited.
  • FIG. 6 is a schematic view showing the external appearance of a laser downlight 200 (in the figure, a light emitting unit 210 described later is illustrated) and a conventional LED downlight 300.
  • FIG. 7 is a cross-sectional view of the ceiling where the laser downlight 200 is installed.
  • FIG. 8 is a cross-sectional view of the laser downlight 200.
  • the laser downlight 200 is embedded in the top plate 400 and emits illumination light, and an LD light source unit that supplies laser light to the light emitting unit 210 via the optical fiber 5. 220.
  • the LD light source unit 220 is not installed on the ceiling, but is installed at a position where the user can easily touch it (for example, a side wall of a house).
  • the position of the LD light source unit 220 can be freely determined in this way because the LD light source unit 220 and the light emitting unit 210 are connected by the optical fiber 5.
  • the optical fiber 5 is disposed in a gap between the top plate 400 and the heat insulating material 401.
  • the light emitting unit 210 includes a housing 211, an optical fiber 5, a light emitting unit 7, a heat conducting member 13, and a light transmitting plate 213.
  • the light emitting unit 7 is bonded to the heat conducting member 13 with an adhesive.
  • the light emitting unit 7 is cooled by the heat of the light emitting unit 7 being transmitted to the heat conducting member 13.
  • the heat generated in the phosphor included in the light emitting unit 7 can be quickly exhausted, and light emission due to the heat generated in the phosphor. Heat generation of the part 7 can be suppressed.
  • a recess 212 is formed in the housing 211, and the light emitting unit 7 is disposed on the bottom surface of the recess 212.
  • a metal thin film is formed on the surface of the recess 212, and the recess 212 functions as a reflecting mirror.
  • a passage for passing the optical fiber 5 is formed near the upper center of the housing 211, and the optical fiber 5 extends to the heat conducting member 13 through this passage. The laser beam emitted from the emission end of the optical fiber 5 passes through the heat conducting member 13 and reaches the light emitting unit 7.
  • the translucent plate 213 is a transparent or translucent plate disposed so as to close the opening of the recess 212.
  • the translucent plate 213 has a function similar to that of the transparent plate 9, and the fluorescence of the light emitting unit 7 is emitted as illumination light through the translucent plate 213.
  • the translucent plate 213 may be removable from the housing 211 or may be omitted.
  • the light emitting unit 210 has a circular outer edge, but the shape of the light emitting unit 210 (more precisely, the shape of the housing 211) is not particularly limited.
  • the LD light source unit 220 includes a semiconductor laser 3, an aspheric lens 4, and an optical fiber 5.
  • the incident end which is one end of the optical fiber 5, is connected to the LD light source unit 220, and the laser light oscillated from the semiconductor laser 3 enters the incident end of the optical fiber 5 through the aspherical lens 4. Is done.
  • a pair of the semiconductor laser 3 and the aspherical lens 4 are shown inside the LD light source unit 220 shown in FIG. 8, but when there are a plurality of light emitting units 210, optical fibers extending from the light emitting units 210, respectively. Five bundles may be guided to one LD light source unit 220.
  • a pair of a plurality of semiconductor lasers 3 and aspherical lenses 4 are accommodated in one LD light source unit 220, and the LD light source unit 220 functions as a centralized power supply box.
  • the conventional LED downlight 300 includes a plurality of light transmitting plates 301, and illumination light is emitted from each light transmitting plate 301. That is, the LED downlight 300 has a plurality of light emitting points.
  • the LED downlight 300 has a plurality of light emitting points because the light flux of light emitted from each light emitting point is relatively small. Therefore, if a plurality of light emitting points are not provided, light having a sufficient light flux as illumination light is provided. This is because it cannot be obtained.
  • the laser downlight 200 is an illumination device with a high luminous flux, it may have one light emitting point. Therefore, it is possible to obtain an effect that the shadow caused by the illumination light is clearly displayed. Moreover, the color rendering property of illumination light can be improved by making the phosphor of the light emitting portion 7 a high color rendering phosphor (for example, a combination of several types of nitride phosphors and oxynitride phosphors). Thereby, the high color rendering which approaches an incandescent bulb downlight is realizable.
  • a high color rendering phosphor for example, a combination of several types of nitride phosphors and oxynitride phosphors.
  • FIG. 9 is a cross-sectional view of the ceiling where the LED downlight 300 is installed.
  • a casing 302 that houses an LED chip, a power source, and a cooling unit is embedded in the top plate 400.
  • the housing 302 is relatively large, and a recess along the shape of the housing 302 is formed in a portion of the heat insulating material 401 where the housing 302 is disposed.
  • a power line 303 extends from the housing 302, and the power line 303 is connected to an outlet (not shown).
  • Such a configuration causes the following problems.
  • a light source LED chip
  • a power source that are heat sources between the top plate 400 and the heat insulating material 401
  • the use of the LED downlight 300 raises the ceiling temperature, and the cooling efficiency of the room.
  • the LED downlight 300 requires a power source and a cooling unit for each light source, which causes a problem that the total cost increases.
  • the housing 302 is relatively large, there is a problem that it is often difficult to arrange the LED downlight 300 in the gap between the top plate 400 and the heat insulating material 401.
  • the laser downlight 200 since the light emitting unit 210 does not include a large heat source, the cooling efficiency of the room is not reduced. As a result, an increase in room cooling costs can be avoided. Further, since it is not necessary to provide a power source and a cooling unit for each light emitting unit 210, the laser downlight 200 can be reduced in size and thickness. As a result, the space restriction for installing the laser downlight 200 is reduced, and installation in an existing house is facilitated. Furthermore, since the laser downlight 200 is small and thin, as described above, the light emitting unit 210 can be installed on the surface of the top plate 400, and the restrictions on installation are made smaller than the LED downlight 300. As well as drastically reducing construction costs.
  • FIG. 10 is a diagram for comparing the specifications of the laser downlight 200 and the LED downlight 300. As shown in the figure, in the laser downlight 200, in one example, the volume is reduced by 94% and the mass is reduced by 86% compared to the LED downlight 300.
  • the semiconductor laser 3 can be easily replaced even if the semiconductor laser 3 breaks down. Further, by guiding the optical fibers 5 extending from the plurality of light emitting units 210 to one LD light source unit 220, the plurality of semiconductor lasers 3 can be collectively managed. Therefore, even when a plurality of semiconductor lasers 3 are replaced, the replacement can be easily performed.
  • a light beam of about 500 lm can be emitted with a power consumption of 10 W, but in order to realize the light of the same brightness with the laser downlight 200, 3 .3W light output is required. If the LD efficiency is 35%, this light output corresponds to power consumption of 10 W, and the power consumption of the LED downlight 300 is also 10 W. Therefore, there is no significant difference in power consumption between the two. Therefore, in the laser downlight 200, the above-described various advantages can be obtained with the same power consumption as that of the LED downlight 300.
  • the laser downlight 200 includes the LD light source unit 220 including at least one semiconductor laser 3 that emits laser light, the at least one light emitting unit 210 including the light emitting unit 7 and the recess 212 as a reflecting mirror, And an optical fiber 5 that guides the laser light to each of the light emitting units 210.
  • FIG. 11 (a) shows a phosphor powder as a raw material, and this phosphor powder is mixed with the low-melting glass frit (sealing agent particles) in the beaker shown in FIG. 11 (b). -Stirred (mixing step).
  • the average particle size of the low melting point glass frit for sealing the phosphor is 10 times or more the average particle size of the phosphor.
  • the mixture of the phosphor powder and the low melting point glass frit is injected into each of the three injection holes h of the sintering mold S shown in FIG. Thereafter, after the mold S is oscillated (oscillation process), and heated and sintered (sintering process), the three light emitting portions 7 can be obtained. Thereafter, as shown in FIG. 3A described above, the light emitting unit 7 and the light emitting unit 7 are arranged such that the region having a high concentration of the phosphor LP in the light emitting unit 7 is a region on the heat conducting member 13 side of the light emitting unit 7.
  • the heat conducting member 13 is thermally coupled (joining process).
  • the low melting point glass frit mixed in the mixing step and the phosphor LP are placed in a sintering mold S and swinged.
  • the sealant particles are as if floating in the liquid composed of the phosphor LP particles. It will be in such a state. Therefore, by further swinging the mold S, it is possible to easily form a region where the concentration of the phosphor LP is high and a region where the concentration of the phosphor LP is low.
  • the light emitting unit 7, the heat conducting member 13, and the heat conducting member 13 are arranged such that the region having a high concentration of the phosphor LP in the light emitting unit 7 formed in the swinging step becomes the region on the heat conducting member 13 side.
  • concentration of fluorescent substance LP in the light emission part 7 is high can be arrange
  • the method for manufacturing a light-emitting device is not limited to the above-described method.
  • three layers of phosphor layers having different concentrations of phosphor LPs of “large”, “medium”, and “small” are provided on the upper side of the paper surface of the heat conducting member 13.
  • the light emitting unit 7 is manufactured by stacking layers in the order in which the concentration increases from the lower side toward the upper side. Note that the number of stages of the phosphor layers having different concentrations is not limited to the above three stages, and may be two stages or four stages or more.
  • a light-emitting device includes a light-emitting unit (light-emitting unit 7) including a phosphor, and a heat dissipation member (heat conducting member 13) for exhausting heat generated from the light-emitting unit.
  • a light-emitting unit including a phosphor, and a heat dissipation member (heat conducting member 13) for exhausting heat generated from the light-emitting unit.
  • an excitation light source semiconductor laser 3 that generates excitation light for exciting the phosphor contained in the light emitting unit, wherein the light emitting unit and the heat dissipation member are thermally bonded
  • the phosphor (LP) concentration contained in the light emitting unit is configured to be higher on the heat radiating member side.
  • the heat generated in the phosphor included in the light emitting portion can be exhausted through the heat radiating member.
  • the concentration of the phosphor contained in the light emitting portion is larger on the side of the heat radiating member, the concentration of the phosphor contained in the light emitting portion is smaller on the side of the heat radiating member (that is, Compared with the configuration in which the excitation light source side is larger), the heat generated in the phosphor included in the light emitting portion can be quickly exhausted.
  • the heat generated in the phosphor in the light emitting portion in the region far from the heat radiating member needs to be transferred through the light emitting portion (usually, the light emitting portion has lower thermal conductivity than the heat radiating member). For this reason, when the density
  • the concentration of the phosphor in the region close to the heat dissipation member in the light emitting unit is increased so that the concentration of the phosphor having a large distance for heat transfer in the light emitting unit is reduced, and the fluorescence in the far region is increased.
  • the body concentration is low. That is, according to said structure, since a large amount of heat does not move a long distance in the light emission part, a light emission part is not heated very much.
  • the heat generated in the phosphor can be quickly exhausted, and the heat generation of the light emitting part due to the heat generated in the phosphor can be suppressed.
  • the concentration of the phosphor included in the light-emitting portion may gradually increase from the side irradiated with the excitation light toward the heat radiating member.
  • the light-emitting portion having the above-described configuration can be easily manufactured by a manufacturing method described later that utilizes a difference in particle size between the particles of the sealing agent that seals the phosphor and the phosphor particles, for example. Therefore, according to the method, it is possible to form a concentration gradient of the light emitting part at once (and easily) as compared with a method of forming the light emitting part with a plurality of layers to be described later. Therefore, the manufacturing process of the light emitting part can be simplified.
  • the light-emitting portion includes a plurality of layers having phosphor concentrations different from each other, and the concentration of the phosphor contained in a layer close to the side irradiated with the excitation light is The concentration of the phosphor contained in the layer close to the layer on the heat radiating member side may be larger.
  • a plurality of phosphor layers having different concentrations are formed (laminated) in the order of a desired concentration on the surface of the heat conducting member, thereby laminating each of the plurality of phosphor layers in the order of the desired concentration.
  • a light-transmitting layer that does not include a phosphor may be stacked on the surface of the light-emitting portion on the side irradiated with the excitation light (light irradiation side).
  • the light emitting side surface of the light emitting part is covered (covered) with the light transmitting layer (transparent plate 15) that does not contain the phosphor (particles) that generates heat.
  • the room where the heat from the phosphor on the light irradiation side of the light emitting portion located at the farthest distance from the heat conducting member can be left on the side opposite to the heat conducting member.
  • the heat dissipation effect can be enhanced.
  • the heat radiating member may have a light-transmitting property, and the light-emitting portion may be irradiated with excitation light transmitted through the heat radiating member.
  • the excitation light transmitted through the heat radiating member is irradiated to the light emitting unit, that is, the excitation light is irradiated through the heat radiating member, so that the heat generated in the phosphor included in the light emitting unit is More of the light emitting part is generated from the phosphor on the side closer to the heat dissipation member.
  • heat generated by the high-concentration phosphor in the region near the heat radiating member in the light emitting portion can be quickly discharged to the heat radiating member.
  • the excitation light source may be spatially separated from the light emitting unit and the heat dissipation member.
  • the excitation light source is spatially separated from the light emitting unit and the heat radiating member, so that the heat generated by the excitation light source with respect to the light emitting unit and the heat radiating member that are thermally integrated. Is never transmitted. Since the heat generated by the excitation light source is not transmitted to the light emitting part, the temperature rise of the light emitting part can be suppressed, and the performance of the light emitting part can be maximized.
  • the excitation light source may be a laser light source.
  • the excitation light source is a laser light source, excitation light with very high power and very high power density can be obtained. Therefore, it is possible to take out illumination light with high luminance and high luminous flux from the light emitting unit.
  • the light emitting device includes a reflecting mirror having a light reflecting concave surface that reflects the fluorescence generated from the light emitting portion, and the light emitting portion is near the bottom of the light reflecting concave surface of the reflecting mirror. A part of the excitation light disposed on the light emitting unit and transmitted to the light emitting unit may pass through the inside of the light emitting unit.
  • the light emitting unit is disposed near the bottom of the light reflecting concave surface of the reflecting mirror, and a part of the excitation light irradiated to the light emitting unit is transmitted through the inside of the light emitting unit, so that the transmitted light is included in the light emitting unit. Therefore, the transmitted light can be diffused in the reflecting mirror.
  • a method for manufacturing a light-emitting device includes a light-emitting unit including a phosphor, a heat radiating member that exhausts heat generated from the light-emitting unit, and excitation light that excites the phosphor included in the light-emitting unit.
  • a sealing agent particle for sealing the phosphor having an average particle size of 10 times or more than the average particle size of the phosphor, A mixing step of mixing the phosphor, a swinging step of swinging the mixed sealing agent particles and the phosphor into a sintering mold, and the swinging mold A sintering step in which the phosphor and the sealing agent particles are sintered by heating to form the light emitting portion, and a bonding step in which the light emitting portion and the heat dissipation member are thermally coupled.
  • the coupling step the phosphor concentration in the light emitting part formed in the rocking step is high. So it becomes the side areas of the heat radiation member of the light emitting portion, may be thermally coupled to form a light emitting portion and the heat radiating member.
  • the sealant particles mixed in the mixing step and the phosphor are put into a sintering mold and rocked.
  • the sealing agent particles are as if floating in a liquid composed of the phosphor particles. It becomes a state. For this reason, it is possible to easily form a region having a high phosphor concentration and a region having a low phosphor concentration by further swinging the mold.
  • the light emitting unit and the heat radiating member are thermally coupled so that the region having a high phosphor concentration in the light emitting unit formed in the swinging step becomes a region on the heat radiating member side.
  • a region having a high concentration of the phosphor in the light emitting portion can be disposed on the heat radiating member side.
  • a lighting device or a headlamp provided with any one of the above light emitting devices is also included in the category of the present invention.
  • a solid-state illumination light source (light-emitting device) includes a light-emitting unit including a phosphor, a heat radiating member for exhausting heat generated from the light-emitting unit, and excitation light that excites the phosphor included in the light-emitting unit.
  • the solid-state illumination light source comprising the generated excitation light source, wherein the light emitting unit and the heat dissipation member are thermally bonded, while the light emission unit and the transparent heat dissipation member are thermally excited
  • the light source is installed spatially apart, and the excitation light that excites the light emitting unit is applied to the light emitting unit, and the concentration of the phosphor contained in the light emitting unit is higher on the transparent heat radiating member side. May be.
  • One of the problems to be solved by the present invention is to effectively discharge the heat generated from the light emitting unit irradiated with such higher intensity excitation light and to suppress the temperature rise of the light emitting unit. is there.
  • the excitation light source is arranged spatially separated from the light emitting part and the transparent heat radiating member, so that the heat discharged from the excitation light source (excitation light that excites the light emission part is emitted).
  • It is also one of the problems to prevent the heat emission from being transmitted to the light emitting part by generating high intensity excitation light by irradiating the light emission part. is there. As a result, it is possible to realize a solid-state illumination light source having high luminous efficiency (no decrease in fluorescence intensity) and long life (not easily deteriorated due to a small increase in temperature).
  • the excitation light is irradiated through the transparent heat radiating member as described above, more heat generated in the phosphor included in the light emitting portion is generated from the phosphor near the transparent heat radiating member in the light emitting portion.
  • the heat generated in the light emitting part is mainly exhausted from the transparent heat radiating member, but the heat generated at a position far from the transparent heat radiating member is transferred in the light emitting part having a lower thermal conductivity than the transparent heat radiating member. Therefore, the temperature of the light emitting part is raised.
  • the excitation light source when the excitation light source is spatially separated with respect to the light emitting part and the transparent heat radiating member, it is generated by the excitation light source with respect to the light emitting part and the transparent heat radiating member which are thermally integrated. Since heat is not transmitted, the light emitting unit is not heated by an external factor (heat of the excitation light source), and the performance of the light emitting unit can be maximized.
  • a high-power LED may be used as the excitation light source.
  • a light emitting device that emits (pseudo) white light can be realized by combining an LED that emits light (blue) with a wavelength of 450 nm and a yellow phosphor or green and red phosphors.
  • a solid-state laser other than the semiconductor laser may be used as the excitation light source.
  • it is preferable to use a semiconductor laser because the excitation light source can be reduced in size.
  • a new technical feature can be formed by combining the technical means disclosed in each of the above embodiments.
  • the form shown in the headlamp 30 shown in FIG. 5 may include the cooling unit 14 included in the headlamp 1 shown in FIG.
  • the present invention can be applied to a light emitting device, a lighting device including the light emitting device, a headlamp including the lighting device, a projection device, indoor lighting, outdoor lighting, and the like. Further, the lighting device (or headlamp) can be applied not only to the vehicle headlamp but also to other lighting devices (or headlamps).
  • An example of the other illumination device (or headlamp) is a downlight.
  • a downlight is a lighting device installed on the ceiling of a structure such as a house or a vehicle.
  • the lighting device (or headlamp) of the present invention may be realized as a headlamp of a moving object other than a vehicle (for example, a human, a ship, an aircraft, a submersible, a rocket, etc.) It may be realized as an indoor lighting device (such as a stand lamp) and an outdoor lighting device (such as a street light) other than a searchlight, a projector, and a downlight.
  • a vehicle for example, a human, a ship, an aircraft, a submersible, a rocket, etc.
  • an indoor lighting device such as a stand lamp
  • an outdoor lighting device such as a street light
  • Headlamp (light emitting device, lighting device, headlamp) 2 Semiconductor laser array (excitation light source) 3 Semiconductor laser (excitation light source) 7 Light emitting part 7a Laser light irradiation surface (excitation light irradiation surface) 8 Reflector 13 Heat conduction member (Heat dissipation member) 21 LED lamp (excitation light source) 26 LED chip (excitation light source) 30 Headlamp (light emitting device, lighting device, headlamp) 81 Reflector 200 Laser downlight (light emitting device, lighting device)

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Selon l'invention, une concentration d'un matériau fluorescent (LP) présent dans une section électroluminescente (7) est supérieure sur le côté d'un élément thermoconducteur (13).
PCT/JP2013/077627 2012-11-22 2013-10-10 Appareil électroluminescent, son procédé de fabrication, appareil d'éclairage et phare Ceased WO2014080705A1 (fr)

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WO2015185296A1 (fr) * 2014-06-03 2015-12-10 Osram Gmbh Dispositif de conversion de rayonnement lumineux et son procédé de production
JP2016034890A (ja) * 2014-08-01 2016-03-17 信越石英株式会社 波長変換用石英ガラス部材及びその製造方法
JP2016034891A (ja) * 2014-08-01 2016-03-17 信越石英株式会社 波長変換用石英ガラス部材及びその製造方法
CN106813185A (zh) * 2015-11-27 2017-06-09 法雷奥照明公司 用于机动车辆前照灯照明模块的发光装置以及关联的照明模块和前照灯
JP2017116719A (ja) * 2015-12-24 2017-06-29 パナソニックＩｐマネジメント株式会社 発光素子および照明装置
WO2019230934A1 (fr) * 2018-05-31 2019-12-05 シャープ株式会社 Élément de conversion de longueur d'onde et dispositif de source de lumière
WO2019230935A1 (fr) * 2018-05-31 2019-12-05 シャープ株式会社 Élément de conversion de longueur d'onde, dispositif source de lumière, phare de véhicule, dispositif d'affichage, module source de lumière et dispositif de projection
JP2019219170A (ja) * 2018-06-15 2019-12-26 株式会社日立製作所 放射線モニタ
JP2022533895A (ja) * 2019-04-16 2022-07-27 ラズライト ホールディングス エルエルシー 光源変換器
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JP2012049022A (ja) * 2010-08-27 2012-03-08 Stanley Electric Co Ltd 半導体発光装置及びそれを用いた車両用灯具
JP2012124054A (ja) * 2010-12-09 2012-06-28 Sharp Corp 発光装置、車両用前照灯および照明装置
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Cited By (20)

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Publication number Priority date Publication date Assignee Title
WO2015185296A1 (fr) * 2014-06-03 2015-12-10 Osram Gmbh Dispositif de conversion de rayonnement lumineux et son procédé de production
JP2016034890A (ja) * 2014-08-01 2016-03-17 信越石英株式会社 波長変換用石英ガラス部材及びその製造方法
JP2016034891A (ja) * 2014-08-01 2016-03-17 信越石英株式会社 波長変換用石英ガラス部材及びその製造方法
CN106813185B (zh) * 2015-11-27 2021-04-13 法雷奥照明公司 用于机动车辆前照灯照明模块的发光装置以及关联的照明模块和前照灯
CN106813185A (zh) * 2015-11-27 2017-06-09 法雷奥照明公司 用于机动车辆前照灯照明模块的发光装置以及关联的照明模块和前照灯
JP2017116719A (ja) * 2015-12-24 2017-06-29 パナソニックＩｐマネジメント株式会社 発光素子および照明装置
JPWO2019230934A1 (ja) * 2018-05-31 2021-06-17 シャープ株式会社 波長変換素子および光源装置
JP6997869B2 (ja) 2018-05-31 2022-01-18 シャープ株式会社 波長変換素子および光源装置
CN112166354A (zh) * 2018-05-31 2021-01-01 夏普株式会社 波长转换元件以及光源装置
WO2019230935A1 (fr) * 2018-05-31 2019-12-05 シャープ株式会社 Élément de conversion de longueur d'onde, dispositif source de lumière, phare de véhicule, dispositif d'affichage, module source de lumière et dispositif de projection
WO2019230934A1 (fr) * 2018-05-31 2019-12-05 シャープ株式会社 Élément de conversion de longueur d'onde et dispositif de source de lumière
JP7160572B2 (ja) 2018-06-15 2022-10-25 株式会社日立製作所 放射線モニタ
JP2019219170A (ja) * 2018-06-15 2019-12-26 株式会社日立製作所 放射線モニタ
JP2022533895A (ja) * 2019-04-16 2022-07-27 ラズライト ホールディングス エルエルシー 光源変換器
EP3956603A4 (fr) * 2019-04-16 2023-02-01 Lazurite Holdings LLC Convertisseur de source de lumière
US12092320B2 (en) 2019-04-16 2024-09-17 Lazurite Holdings Llc Light source converter
JP7637062B2 (ja) 2019-04-16 2025-02-27 ラズライト ホールディングス エルエルシー 光源変換器
JP2025097976A (ja) * 2019-04-16 2025-07-01 ラズライト ホールディングス エルエルシー 光源変換器
AU2023237188B2 (en) * 2019-04-16 2025-07-03 Lazurite Holdings Llc Light source converter
US12068439B2 (en) 2019-12-23 2024-08-20 Nippon Electric Glass Co., Ltd. Wavelength conversion member, light-emitting element, and light-emitting device

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