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WO2014073220A1 - Composition de résine époxy liquide pour le scellage de semi-conducteur et dispositif à semi-conducteur l'utilisant - Google Patents

Composition de résine époxy liquide pour le scellage de semi-conducteur et dispositif à semi-conducteur l'utilisant Download PDF

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Publication number
WO2014073220A1
WO2014073220A1 PCT/JP2013/050229 JP2013050229W WO2014073220A1 WO 2014073220 A1 WO2014073220 A1 WO 2014073220A1 JP 2013050229 W JP2013050229 W JP 2013050229W WO 2014073220 A1 WO2014073220 A1 WO 2014073220A1
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WIPO (PCT)
Prior art keywords
epoxy resin
semiconductor
resin composition
semiconductor device
liquid epoxy
Prior art date
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Application number
PCT/JP2013/050229
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English (en)
Japanese (ja)
Inventor
貴志 長谷川
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Panasonic Corp
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Panasonic Corp
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Filing date
Publication date
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Publication of WO2014073220A1 publication Critical patent/WO2014073220A1/fr
Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/50—Amines
    • C08G59/5033—Amines aromatic
    • H10W74/012—
    • H10W74/15—
    • H10W74/473—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9212—Sequential connecting processes
    • H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
    • H10W72/01271—
    • H10W72/072—
    • H10W72/07211—
    • H10W72/07236—
    • H10W72/252—
    • H10W72/325—
    • H10W72/353—
    • H10W72/354—
    • H10W90/724—
    • H10W90/734—

Definitions

  • the present invention relates to a liquid epoxy resin composition for semiconductor encapsulation and a semiconductor device using the same.
  • flip chip type semiconductor devices capable of high-density mounting such as BGA (Ball Grid Array), CSP (Chip Size Package), and bare chip mounting.
  • a bump electrode is formed by solder on a semiconductor device of a mounting component, and a circuit board on which a mounting electrode pad provided so as to correspond to the bump electrode is formed, Place semiconductor devices face down. Then, the solder is melted by reflow treatment to directly connect the bump electrode and the electrode pad.
  • connection failure may occur due to distortion due to thermal stress, which may cause a problem of reliability. That is, the thermal stress derived from the difference in thermal expansion coefficient between the semiconductor device and the circuit board may concentrate on the connection portion and break the connection portion.
  • the gap formed between the semiconductor device and the circuit board is sealed with a resin composition to disperse this thermal stress and to improve the connection reliability.
  • Underfill technology that enhances performance is widely used. Underfill technology has functions such as protecting bumps, relieving stress in solder joints caused by differences in thermal expansion coefficient between semiconductor devices and circuit boards, and ensuring moisture resistance and airtightness. .
  • a post-supply method is widely used in which a semiconductor device is mounted on a circuit board, electrodes are joined by reflow treatment, and then a sealing resin is injected into the gap between the circuit board and the semiconductor device. ing.
  • a liquid epoxy resin composition in which a liquid epoxy resin is used as a main ingredient at room temperature and a curing agent, an inorganic filler or the like is blended is typically used.
  • Patent Documents 1 and 2 a liquid epoxy resin composition in which a liquid epoxy resin is used as a main ingredient at room temperature and a curing agent, an inorganic filler or the like is blended is typically used.
  • the generation factors of this void include decomposition and volatilization of components in the resin composition, evaporation of moisture, volatilization of uncured low molecular components contained in the solder resist that protects the circuit board surface, and the like.
  • the voids left in the cured sealing resin cause the reliability of bonding between the semiconductor device and the circuit board to decrease.
  • the amine curing agent which is becoming the standard for flip chip devices, has a problem that it is easy to trap gas emitted from other members at the curing temperature because it is very slow to cure.
  • the present invention has been made in view of the circumstances as described above, and in flip-chip mounting in which the sealing resin is cured by a method of supplying the sealing resin to the circuit board later, in the cured sealing resin. It is an object of the present invention to provide a liquid epoxy resin composition for semiconductor encapsulation that is less likely to leave voids and has excellent reliability, and a semiconductor device using the same.
  • a liquid epoxy resin composition for semiconductor encapsulation of the present invention includes a semiconductor device in which pads formed on each of a semiconductor device and a circuit board are connected via a conductive bump.
  • a liquid epoxy resin composition for semiconductor encapsulation used as a sealing resin that is supplied to a gap with a circuit board and cured by heating, an epoxy resin that is liquid at room temperature, an amine curing agent, a thermosetting acrylic resin, and a thermosetting acrylic It is characterized by containing a thermal polymerization initiator for the resin and an inorganic filler.
  • the content of the thermosetting acrylic resin is in the range of 1.0 to 15% by mass relative to the total amount of the liquid epoxy resin composition for semiconductor encapsulation. preferable.
  • the stoichiometric equivalent ratio of the total epoxy resin including the epoxy resin that is liquid at normal temperature and the amine curing agent is in the range of 0.5 to 1.5. It is preferable.
  • the content of the inorganic filler is preferably in the range of 40 to 70% by mass relative to the total amount of the liquid epoxy resin composition for semiconductor encapsulation.
  • a semiconductor device of the present invention includes a semiconductor device and a circuit board on which the semiconductor device is mounted, and pads formed on the semiconductor device and the circuit board are connected to each other through conductive bumps.
  • the gap between the circuit board and the circuit board is sealed with a cured product of the liquid epoxy resin composition for semiconductor sealing.
  • liquid epoxy resin composition for semiconductor sealing and the semiconductor device of the present invention voids hardly remain in the cured sealing resin and the reliability is excellent.
  • liquid epoxy resin composition for semiconductor encapsulation of the present invention an epoxy resin that is liquid at room temperature is used as the epoxy resin.
  • liquid at normal temperature means having fluidity in a temperature range of 5 to 28 ° C. under atmospheric pressure, particularly around room temperature 18 ° C.
  • the viscosity of the epoxy resin is preferably 250 P or less at 25 ° C., more preferably 1 to 250 P. When the viscosity is within this range, workability and workability when injecting the liquid epoxy resin composition for semiconductor encapsulation can be improved.
  • the molecular weight and molecular structure are not particularly limited as long as they have two or more epoxy groups in one molecule, and various types can be used.
  • liquid epoxy resins such as glycidyl ether type, glycidyl amine type, glycidyl ester type, and olefin oxidation type (alicyclic) can be used.
  • water such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol type epoxy resin such as bisphenol S type epoxy resin, hydrogenated bisphenol A type epoxy resin, hydrogenated bisphenol F type epoxy resin, etc.
  • Bisphenol epoxy resin, biphenyl epoxy resin, naphthalene ring-containing epoxy resin, alicyclic epoxy resin, dicyclopentadiene epoxy resin, phenol novolac epoxy resin, cresol novolac epoxy resin, triphenylmethane epoxy resin, fat A group epoxy resin, triglycidyl isocyanurate, a glycidyl group-containing silicone resin, or the like can be used. These may be used alone or in combination of two or more. Further, a polyfunctional epoxy resin having 3 or 4 functional groups, a trifunctional type, a tetrafunctional type, or the like of an alicyclic epoxy resin or a glycidylamine type epoxy resin can also be used.
  • examples of the bisphenol A type epoxy resin include an epoxy resin represented by the following formula.
  • R 1 to R 8 are a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, or an aralkyl group having 6 to 10 carbon atoms. All may be the same or different from each other, and p represents an integer of 0 to 20, preferably 0 to 10.)
  • a solid epoxy resin at room temperature may be blended as long as the mixture with the epoxy resin that is liquid at room temperature becomes liquid at room temperature.
  • An amine curing agent is blended in the liquid epoxy resin composition for semiconductor encapsulation of the present invention.
  • the amine curing agent for example, a compound having at least one primary or secondary amino group in the molecule can be used. From the viewpoint of low outgassing property, storage stability, and heat resistance of the cured product. Aromatic amines are preferred.
  • aromatic amines for example, aromatic primary amines, aromatic secondary amines, aromatic tertiary amines, aromatic diamines and the like can be used. These may be used alone or in combination of two or more.
  • aromatic primary amines examples include aniline, o, m, p-toluidine, o, m, p-ethylaniline, xylidine, mesidine, o, m, p-chloroaniline, chlorotoluidine, dichloroaniline, Trichloroaniline, o, m, p-fluoroaniline, o, m, p-bromoaniline, fluorochloroaniline, o, m, p-aminophenol, o, m, p-aminothiophenol, anisidine, phenetidine, o, m, p-aminobenzoic acid, aminochlorophenol, aminobenzonitrile, cresidine, toluidinesulfonic acid, sulfanilic acid, chlorotoluidinesulfonic acid, aminonaphthalenesulfonic acid, aminobenzotrifluoride, aminobenzenesulfonic acid
  • aromatic secondary amines examples include N-methylaniline, N-ethylaniline, N-ethyltoluidine, diphenylamine, hydroxyphenylglycine, N-methylaminophenol sulfate and the like.
  • Aromatic tertiary amines include, for example, N, N-dimethylaniline, N-ethyl-N-hydroxyethyltoluidine, N, N-diethyltoluidine, N-benzyl-N-ethylaniline, N, N-di Examples thereof include glycidyl aniline.
  • aromatic diamines examples include o, m, p-phenylenediamine, chloro-p-phenylenediamine, chloro-m-phenylenediamine, fluorophenylenediamine, dichlorophenylenediamine, methylphenylenediamine, dimethylphenylenediamine, and xylylenediamine.
  • Phenylenediamines such as amine and tolylenediamine, benzidine, o-tolidine, dianisidine, diaminodiphenylmethane, diaminodichlorodiphenylmethane, diaminomethane such as diaminodiethyldiphenylmethane, naphthalenediamine, diaminobenzanilide, diaminodiphenyl ether, diaminostilbene Disulfonic acid, diaminophenol dihydrochloride, leuco diamino anth Quinones, amino -N, N-diethylamino-toluidine hydrochloride or amino -N- ethyl -N- (beta-methanesulfonamido ethyl) - such as toluidine sulfate hydrate can be mentioned.
  • the stoichiometric equivalent ratio of the epoxy resin and the amine curing agent (amine curing agent / epoxy resin) in the liquid epoxy resin composition for semiconductor encapsulation of the present invention is preferably in the range of 0.5 to 1.5. More preferably, the equivalent ratio is 0.6 to 1.4. When this equivalent ratio is 1.5 or less, insufficient curing or a decrease in heat resistance or strength of the cured product can be suppressed, and when the equivalent ratio is 0.5 or more, a decrease in adhesive strength or a cured product is achieved. The increase in heat resistance and moisture absorption can also be suppressed.
  • the epoxy resin curing agent may be mixed with an amine curing agent and another curing agent other than the amine curing agent.
  • curing agent For example, imidazoles, phenols, acid anhydrides, etc. can be used.
  • thermosetting acrylic resin is blended in the liquid epoxy resin composition for semiconductor encapsulation of the present invention.
  • the curing agent is used, so the curing is slow, so the gas from the circuit board or other member is trapped as a void at the reaction temperature, but by adding a fast-curing thermosetting acrylic resin and curing by radical reaction, from the member It is possible to suppress the trapping of voids by increasing the viscosity before the gas is released.
  • thermosetting acrylic resin As a component used for the thermosetting acrylic resin, a compound having two or more (meth) acryloyl groups is preferable in view of ensuring heat resistance, and has 2 to 6 (meth) acryloyl groups. A compound is more preferable, and a compound having two (meth) acryloyl groups is more preferable.
  • di (meth) acrylate having a structure in which an alkylene oxide is added to a bisphenol skeleton represented by the following formula (II) or (III) is preferable.
  • di (meth) acrylate having a structure in which alkylene oxide is added to this bisphenol skeleton is used, a cured product having excellent heat resistance and adhesion can be obtained.
  • R 11 represents hydrogen, a methyl group, or an ethyl group
  • R 12 represents a divalent organic group
  • m and n represent integers of 1 to 20.
  • R 11 represents hydrogen, a methyl group, or an ethyl group
  • R 12 represents a divalent organic group
  • m and n represent integers of 1 to 20.
  • Examples of the di (meth) acrylate having a structure in which an alkylene oxide is added to the bisphenol skeleton include, for example, Aronix M-210 and M-211B (manufactured by Toagosei), NK ester ABE-300, and A-BPE-4.
  • A-BPE-6, A-BPE-10, A-BPE-20, A-BPE-30, BPE-100, BPE-200, BPE-500, BPE-900, BPE-1300N (manufactured by Shin-Nakamura Chemical)
  • Other compounds having two (meth) acryloyl groups include, for example, ethylene glycol di (meth) acrylate, 1,4-butanediol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, 1,9-nonanediol di (meth) acrylate, 1,3-butanediol di (meth) acrylate, neopentyl glycol di (meth) acrylate, dimer diol di (meth) acrylate, dimethylol tricyclodecane di (meth) An acrylate etc. are mentioned.
  • Diethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, polyethylene glycol di (meth) acrylate, tripropylene glycol di (meth) acrylate, polypropylene glycol di (meth) An acrylate etc. are mentioned.
  • glycerin di (meth) acrylate trimethylolpropane di (meth) acrylate, pentaerythritol di (meth) acrylate, zinc di (meth) acrylate, cyclohexanediol di (meth) acrylate, cyclohexanedimethanol di (meth) acrylate, cyclohexane
  • Examples include diethanol di (meth) acrylate, cyclohexanedialkyl alcohol di (meth) acrylate, dimethanol tricyclodecane di (meth) acrylate, and the like.
  • reaction product of 1 mol of bisphenol A, bisphenol F or bisphenol AD and 2 mol of glycidyl acrylate a reaction product of 1 mol of bisphenol A, bisphenol F or bisphenol AD and 2 mol of glycidyl methacrylate, and the like.
  • (Meth) acrylate having a crosslinked polycyclic structure is also exemplified. Specifically, for example, (meth) acrylate having a dicyclopentadiene skeleton, (meth) acrylate having a perhydro-1,4: 5,8-dimethananaphthalene skeleton, (meth) acrylate having a norbornane skeleton, dicyclo Pentadienyl diacrylate (tricyclodecane dimethanol diacrylate), perhydro-1,4: 5,8-dimethananaphthalene-2,3,7-trimethylol triacrylate, norbornane dimethylol diacrylate, perhydro-1, 4: 5,8-dimethanonaphthalene-2,3-dimethylol diacrylate and the like.
  • epoxy (meth) acrylate is exemplified.
  • an oligomer that is an addition reaction product of an epoxy resin and an unsaturated monobasic acid such as acrylic acid or methacrylic acid can be used.
  • an unsaturated monobasic acid such as acrylic acid or methacrylic acid
  • a diglycidyl compound (bisphenol type epoxy resin) obtained by condensation of bisphenols typified by bisphenols such as bisphenol A and bisphenol F and epihalohydrin can be used.
  • an epoxy resin having a phenol skeleton a polyvalent glycidyl ether (phenol novolac-type epoxy resin, cresol novolak) obtained by condensation of phenol or cresol and phenol novolaks which are condensates of aldehydes typified by formalin and epihalohydrin is used.
  • Type epoxy resin An epoxy resin having a cyclohexyl ring can be used.
  • the compound having three or more (meth) acryloyl groups include pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol pentaacrylate, ethoxylation (3) trimethylolpropane triacrylate, ethoxylation (6) Trimethylolpropane triacrylate, ethoxylated (9) trimethylolpropane triacrylate, propoxylated (6) trimethylolpropane triacrylate, propoxylated (3) glyceryl triacrylate, highly propoxylated (55) glyceryl triacrylate, ethoxylated ( 15) Trimethylolpropane triacrylate, trimethylolpropane trimethacrylate, tetraethylene glycol diacrylate, dimethylol group Pantetraacrylate, tripropylene glycol diacrylate, pentaacrylate ester, 1,3-adamantanediol dimethacrylate
  • thermosetting acrylic resin various vinyl monomers such as a monofunctional vinyl monomer may be added to the thermosetting acrylic resin.
  • the content of the thermosetting acrylic resin in the liquid epoxy resin composition for semiconductor encapsulation of the present invention is preferably in the range of 1.0 to 15% by mass with respect to the total amount of the liquid epoxy resin composition for semiconductor encapsulation. If the content is within this range, voids due to thickening can be suppressed, and deterioration in reliability can also be suppressed.
  • a thermal polymerization initiator is blended in the liquid epoxy resin composition for semiconductor encapsulation of the present invention.
  • an organic peroxide can be used as the thermal polymerization initiator.
  • an organic peroxide for example, diacyl peroxide compounds, peroxyester compounds, hydroperoxide compounds, dialkyl peroxide compounds, ketone peroxide compounds, peroxyketal compounds, alkyl peroxide compounds, A carbonate compound or the like can be used.
  • the organic peroxide as the thermal polymerization initiator is preferably one having a 10-hour half-life temperature in the range of 60 to 200 ° C. in consideration of the suppression of voids, storage stability, and the like.
  • a high-temperature heat-curing system in which the organic peroxide is decomposed and cured only by heat at a higher temperature).
  • cumene hydroxy peroxide tertiary butyl isopropyl monocarbonate, tertiary butyl peroxybenzoate, diisopropylbenzene hydroperoxide and the like are preferable.
  • the content of the thermal polymerization initiator is not particularly limited, but is preferably 0.2 to 5 parts by mass with respect to 100 parts by mass of the thermosetting acrylic resin. If the content is within this range, voids due to thickening can be suppressed, and deterioration in reliability can also be suppressed.
  • An inorganic filler is blended in the liquid epoxy resin composition for semiconductor encapsulation of the present invention.
  • the thermal expansion coefficient of the cured product can be adjusted by blending the inorganic filler.
  • the inorganic filler examples include silica powder such as fused silica (fused spherical silica and fused crushed silica), synthetic silica and crystalline silica, oxides such as alumina and titanium oxide, talc, fired clay, unfired clay, mica, Silicates such as glass, carbonates such as calcium carbonate, magnesium carbonate and hydrotalcite, hydroxides such as aluminum hydroxide, magnesium hydroxide and calcium hydroxide, sulfates such as barium sulfate, calcium sulfate and calcium sulfite Alternatively, borates such as sulfite, zinc borate, barium metaborate, aluminum borate, calcium borate, and sodium borate, and nitrides such as aluminum nitride, boron nitride, and silicon nitride can be used.
  • silica powder such as fused silica (fused spherical silica and fused crushed silica)
  • fused silica, crystalline silica, and synthetic silica are preferable because heat resistance, moisture resistance, strength, and the like can be improved.
  • the shape of the inorganic filler is not particularly limited, such as a crushed shape, a needle shape, a flake shape, and a spherical shape, but it is preferable to use a spherical shape from the viewpoint of dispersibility and viscosity control.
  • the inorganic filler may be any size as long as the average particle size is smaller than the gap between the semiconductor chip and the circuit board when flip-chip connected. From the viewpoint of filling density and viscosity control, the average particle size is 10 ⁇ m. The following are preferable, those having 5 ⁇ m or less are more preferable, those having 3 ⁇ m or less are more preferable, and those having 0.2 to 3 ⁇ m are particularly preferable.
  • the average particle size is obtained as a median diameter (d50, volume basis) by cumulative distribution from a measured value of particle size distribution by a laser diffraction / scattering method using a commercially available laser diffraction / scattering type particle size distribution measuring device. be able to.
  • the inorganic filler preferably has a maximum particle size of 10 ⁇ m or less, more preferably 0.5 to 10 ⁇ m.
  • a maximum particle size 10 ⁇ m or less
  • a narrow gap of 20 ⁇ m or less can be handled.
  • an increase in viscosity can be suppressed.
  • two or more kinds of inorganic fillers having different particle sizes may be used in combination.
  • the blending amount of the inorganic filler in the liquid epoxy resin composition for semiconductor encapsulation of the present invention is preferably 40 to 70% by mass with respect to the total amount of the liquid epoxy resin composition for semiconductor encapsulation. If it is within this range, the thermal expansion coefficient can be reduced to improve the reliability in the temperature cycle test, and the workability can also be suppressed from being lowered due to the viscosity becoming too high.
  • a silane coupling agent can be blended in the liquid epoxy resin composition for semiconductor encapsulation of the present invention.
  • the silane coupling agent improves the wettability of the inorganic filler and the resin and the adhesion between the adherend and the adherend.
  • silane coupling agent examples include glycidoxysilanes such as ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldiethoxysilane, and ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane.
  • Mercaptosilane such as ⁇ -mercaptopropyltrimethoxysilane, N- ⁇ (aminoethyl) - ⁇ -aminopropyltrimethoxysilane, ⁇ -aminopropyltriethoxysilane, N-phenyl- ⁇ -aminopropyltrimethoxysilane, etc.
  • Aminosilane, alkylsilane, ureidosilane, vinylsilane and the like can be used. These may be used alone or in combination of two or more.
  • the content of the silane coupling agent in the liquid epoxy resin composition for semiconductor encapsulation of the present invention is preferably 0.1 to 2.0% by mass with respect to the total amount of the inorganic filler and the silane coupling agent. Within this range, the adhesion of the cured product can be improved, and the generation of voids in the cured product can also be suppressed.
  • the liquid epoxy resin composition for semiconductor encapsulation of the present invention can further contain other additives within a range not impairing the effects of the present invention.
  • other additives include curing accelerators, antifoaming agents, leveling agents, low stress agents, and coloring agents.
  • the liquid epoxy resin composition for semiconductor encapsulation of the present invention can be produced, for example, by the following procedure.
  • the above components are blended simultaneously or separately, and stirring, dissolution, mixing, and dispersion are performed while performing heat treatment or cooling treatment as necessary.
  • an inorganic filler is added to the mixture, and the liquid epoxy resin composition for semiconductor encapsulation of the present invention is obtained by stirring, mixing, and dispersing again while performing heat treatment and cooling treatment as necessary.
  • a disper, a planetary mixer, a ball mill, a three roll, etc. can be used in combination.
  • the liquid epoxy resin composition for semiconductor encapsulation of the present invention is preferably liquid at 25 ° C. from the viewpoints of workability and workability.
  • the viscosity of the liquid epoxy resin composition for semiconductor encapsulation of the present invention is preferably 1000 Pa ⁇ s or less, more preferably 200 Pa ⁇ s or less, and 100 Pa ⁇ s or less at 25 ° C. More preferred is 1 to 100 Pa ⁇ s or less.
  • the viscosity is a value when measured using an E-type rotational viscometer at 25 ° C. and a rotational speed of 0.5 rpm.
  • the semiconductor device of the present invention includes a semiconductor device and a circuit board on which the semiconductor device is mounted. Pads formed on each of the semiconductor device and the circuit board are connected via conductive bumps, and the gap between the semiconductor device and the circuit board is sealed with a cured product of the liquid epoxy resin composition for semiconductor sealing. Has been.
  • the semiconductor device may be a semiconductor chip (bare chip), CSP, BGA, or the like as long as it is a device connected to the circuit board via conductive bumps.
  • the semiconductor chip is not particularly limited, and various semiconductors such as elemental semiconductors such as silicon and germanium, and compound semiconductors such as gallium arsenide and indium phosphide can be used.
  • a chip-side pad is formed on the semiconductor chip, and the chip-side pad and the circuit board-side pad are electrically connected by a conductive bump.
  • a metal layer made of a metal material such as copper is formed on an insulating substrate such as glass epoxy, polyimide, polyester, or ceramic, and an unnecessary portion of the metal layer is removed by etching.
  • a circuit pattern formed by printing a conductive material on the surface of the insulating substrate can be used.
  • a metal layer made of low melting point solder, high melting point solder, tin, indium, gold, nickel, silver, copper, palladium or the like may be formed on the surface of the circuit.
  • This metal layer may be composed of only a single component or may be composed of a plurality of components. Moreover, you may have the structure where the some metal layer was laminated
  • the circuit board may be, for example, an interposer used in a semiconductor device such as BGA or CSP, or a large printed wiring board called a mother board or a daughter board (that is, the liquid epoxy for semiconductor encapsulation of the present invention).
  • the resin composition can also be used as an underfill material for secondary mounting to reinforce the connection of the semiconductor package.
  • a build-up circuit board can be used as the circuit board. On the build-up circuit board, one or a plurality of insulating layers made of a photosensitive resin layer, a prepreg cured layer, and the like are formed, and a circuit is formed on the insulating layer.
  • a solder resist is formed on the surface of the build-up circuit board, and a region not covered with the solder resist of the uppermost circuit is a circuit board side pad.
  • Examples of conductive bump materials include low melting point solder, high melting point solder, tin, indium, gold, silver, and copper.
  • the conductive bump may be composed of only a single component or may be composed of a plurality of components.
  • the conductive bump may have a laminated structure including a metal layer made of these components. Further, it may be a conductive ball such as a solder ball.
  • the semiconductor device of the present invention can be manufactured, for example, by the following method. After applying the rosin-based flux to the solder bump surface formed on the semiconductor chip using a flux application device, the semiconductor chip and the circuit board are aligned using a chip mounter, and then the semiconductor chip is bonded to the circuit board. Place it in a predetermined position on the top. Next, using a reflow apparatus, heat treatment is performed with a predetermined heating profile, and solder bumps are melted to flip-chip connect the semiconductor chip and the substrate.
  • the residue of the flux is washed with a solvent, and then heated to 100 to 120 ° C.
  • the liquid epoxy resin composition for semiconductor encapsulation of the present invention is dropped, and a capillary phenomenon is formed in the gap between the semiconductor chip and the substrate. Inject using. After completion of the injection, heat treatment is performed in a heating oven heated to 120 to 170 ° C. for 0.5 to 5 hours in order to cure the liquid epoxy resin composition for semiconductor encapsulation.
  • the semiconductor device of the present invention can be used for mobile devices such as mobile phones, multi-function mobile phones, personal digital assistants, digital cameras, and notebook computers.
  • BPE-80N Thermal polymerization initiator
  • the portion of the sealing resin of this semiconductor device was observed with an image of an ultrasonic flaw detector (SAT: manufactured by Hitachi Engineering Co., Ltd.) and evaluated according to the following criteria.
  • ⁇ Zero voids
  • ⁇ Zero voids under the chip, 1 to 5 voids outside the peripheral
  • ⁇ One or more voids under the chip [Reliability (temperature cycle test)]
  • the cured semiconductor device is electrically operated, and a non-defective product is subjected to a liquid phase heat cycle test in which one cycle is ⁇ 55 ° C. for 30 minutes and 125 ° C. for 30 minutes.
  • the apparatus was operated and evaluated according to the following criteria. ⁇ : Resistance increase is less than 10% at 1000 cycles or more. ⁇ : Resistance increase is less than 10% at 500 cycles or more. X: Resistance increase is 10% or more at 100 cycles or more The evaluation results are shown in Tables 1 and 2.
  • the semiconductor seals of Examples 1 to 11 were blended with an epoxy resin that was liquid at room temperature, an amine curing agent, a thermosetting acrylic resin, a thermal polymerization initiator for the thermosetting acrylic resin, and an inorganic filler.
  • the liquid epoxy resin composition for stopping has suppressed voids and has reliability in a temperature cycle.
  • thermosetting acrylic resin when the content of the thermosetting acrylic resin is in the range of 1.0 to 15% by mass with respect to the total amount of the liquid epoxy resin composition for semiconductor encapsulation, voids was suppressed and it had reliability.
  • voids when the stoichiometric equivalent ratio between the epoxy resin and the amine curing agent is within the range of 0.5 to 1.5, voids are suppressed and reliability in the temperature cycle is improved. Also had.
  • the content of the inorganic filler was in the range of 40 to 70% by mass, voids were suppressed and the temperature cycle was reliable.
  • Comparative Example 1 in which the thermosetting acrylic resin and the thermal polymerization initiator were not blended
  • Comparative Example 2 in which only the thermosetting acrylic resin was blended and no thermal polymerization initiator was blended, only the thermal polymerization initiator was blended and heat
  • Comparative Example 3 in which no curable acrylic resin was blended, a considerable amount of voids occurred.

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)

Abstract

Dans le montage de puces à protubérances dans lequel une résine de scellage est durcie par un procédé d'introduction ultérieure de la résine de scellage dans un substrat de circuit, cette composition de résine époxy liquide pour le scellage de semi-conducteur a une excellente fiabilité et n'est pas sujette à conduire à des vides restants dans la résine de scellage durcie ; l'invention concerne également un dispositif semi-conducteur utilisant ladite composition. Cette composition de résine époxy liquide pour le scellage de semi-conducteur est utilisée comme résine de scellage introduite et soumise à un durcissement thermique dans des intervalles entre le dispositif à semi-conducteur et le substrat de circuit qui sont connectés, par des bosses conductrices, à des patins formés sur le dispositif à semi-conducteur et le substrat de circuit, cette composition étant caractérisée en ce qu'elle contient une résine époxy qui est liquide à la température ambiante, un agent de durcissement amine, une résine acrylique à durcissement thermique, un amorceur de polymérisation thermique de la résine acrylique à durcissement thermique et une charge inorganique.
PCT/JP2013/050229 2012-11-07 2013-01-09 Composition de résine époxy liquide pour le scellage de semi-conducteur et dispositif à semi-conducteur l'utilisant Ceased WO2014073220A1 (fr)

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JP2012-245422 2012-11-07

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017103304A (ja) * 2015-11-30 2017-06-08 日立化成株式会社 半導体用接着剤、半導体装置、及び半導体装置の製造方法
CN114761459A (zh) * 2019-12-12 2022-07-15 松下知识产权经营株式会社 密封用树脂组合物及半导体装置
WO2025257942A1 (fr) * 2024-06-11 2025-12-18 株式会社レゾナック Composition de résine d'étanchéité, tranche de réarrangement, boîtier de semi-conducteur et procédé de fabrication de boîtier de semi-conducteur

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7238259B2 (ja) * 2018-03-16 2023-03-14 三菱ケミカル株式会社 プリプレグ
WO2019193959A1 (fr) * 2018-04-02 2019-10-10 パナソニックＩｐマネジメント株式会社 Poudre de résine, matériau d'étanchéité, composant électronique et procédé de fabrication de poudre de résine
JP6844680B2 (ja) * 2019-12-12 2021-03-17 昭和電工マテリアルズ株式会社 先供給型アンダーフィル材、先供給型アンダーフィル材の硬化物、電子部品装置及び電子部品装置の製造方法
TWI889831B (zh) 2020-06-12 2025-07-11 日商味之素股份有限公司 樹脂組成物

Citations (1)

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JP2012116979A (ja) * 2010-12-02 2012-06-21 Hitachi Chemical Co Ltd エポキシ樹脂組成物、半導体封止充てん用樹脂組成物及び半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012116979A (ja) * 2010-12-02 2012-06-21 Hitachi Chemical Co Ltd エポキシ樹脂組成物、半導体封止充てん用樹脂組成物及び半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017103304A (ja) * 2015-11-30 2017-06-08 日立化成株式会社 半導体用接着剤、半導体装置、及び半導体装置の製造方法
CN114761459A (zh) * 2019-12-12 2022-07-15 松下知识产权经营株式会社 密封用树脂组合物及半导体装置
CN114761459B (zh) * 2019-12-12 2024-07-02 松下知识产权经营株式会社 密封用树脂组合物及半导体装置
WO2025257942A1 (fr) * 2024-06-11 2025-12-18 株式会社レゾナック Composition de résine d'étanchéité, tranche de réarrangement, boîtier de semi-conducteur et procédé de fabrication de boîtier de semi-conducteur

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