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WO2014050861A1 - Dispositif de détection d'image radiographique - Google Patents

Dispositif de détection d'image radiographique Download PDF

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Publication number
WO2014050861A1
WO2014050861A1 PCT/JP2013/075857 JP2013075857W WO2014050861A1 WO 2014050861 A1 WO2014050861 A1 WO 2014050861A1 JP 2013075857 W JP2013075857 W JP 2013075857W WO 2014050861 A1 WO2014050861 A1 WO 2014050861A1
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WO
WIPO (PCT)
Prior art keywords
scintillator
image detection
photoelectric conversion
detection apparatus
conversion panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/075857
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English (en)
Japanese (ja)
Inventor
敏之 鍋田
美広 岡田
成行　書史
弘隆 渡野
宗貴 加藤
中津川　晴康
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Fujifilm Corp
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Fujifilm Corp
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Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of WO2014050861A1 publication Critical patent/WO2014050861A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20188—Auxiliary details, e.g. casings or cooling
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20188—Auxiliary details, e.g. casings or cooling
    • G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/42—Arrangements for detecting radiation specially adapted for radiation diagnosis
    • A61B6/4283—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by a detector unit being housed in a cassette

Definitions

  • the present invention relates to a radiological image detection apparatus used for radiography.
  • This radiation image detection apparatus includes a direct conversion system that directly converts radiation into electric charges and an indirect conversion system that converts radiation once into visible light and converts the visible light into electric charge.
  • the indirect conversion type radiation image detection apparatus has a scintillator (phosphor layer) that absorbs radiation and converts it into visible light, and a photoelectric conversion panel that detects visible light and converts it into electric charge.
  • a scintillator cesium iodide (CsI) or gadolinium oxide sulfur (GOS) is used.
  • CsI cesium iodide
  • GOS gadolinium oxide sulfur
  • the photoelectric conversion panel thin film transistors and photodiodes are arranged in a matrix on the surface of a glass insulating substrate.
  • CsI is higher in manufacturing cost than GOS, but has high conversion efficiency from radiation to visible light. Further, CsI has a columnar crystal structure and improves the S / N ratio of image data due to the light guide effect. Therefore, CsI is used as a scintillator of a radiographic image detection apparatus especially for high end.
  • a pasting method and a direct vapor deposition method are known.
  • the deposition substrate on which the scintillator is deposited and the photoelectric conversion panel are pasted via an adhesive layer so that the scintillator faces the photoelectric conversion panel.
  • the tip of the CsI columnar crystal is close to the photoelectric conversion panel, and visible light emitted from the tip is efficiently incident on the photoelectric conversion panel, so that a high-resolution radiation image can be obtained.
  • the pasting method uses a vapor deposition substrate, so that the number of manufacturing steps is large and the cost is high.
  • the scintillator is directly vapor deposited on the photoelectric conversion panel. Since this direct vapor deposition method does not require a vapor deposition substrate, the number of manufacturing steps is small and the cost is low. In this direct vapor deposition method, since the tip of the CsI columnar crystal is disposed on the opposite side of the photoelectric conversion panel, the image quality of the radiation image is slightly inferior to that of the pasting method, but the scintillator is formed of GOS. Better than the case. For this reason, the direct vapor deposition method has a good balance between performance and cost.
  • abnormally grown crystal is a crystal in which a columnar crystal has grown starting from a defect or the like locally deformed in a convex shape on the surface of the photoelectric conversion panel. It spreads larger than the size.
  • the scintillator is disposed on the radiation source side from the photoelectric conversion panel. Radiation is incident on the scintillator from the tip side of the columnar crystal, and the radiation is absorbed in the vicinity of the tip to generate visible light emission.
  • positions a scintillator in the radiation source side rather than a photoelectric conversion panel is called the PSS (Penetration Side Sampling) type.
  • an ISS (Irradiation Side Sampling) type radiological image detection apparatus which is a direct vapor deposition method and has a photoelectric conversion panel arranged on the radiation source side from the scintillator (for example, Japanese Patent Application Laid-Open No. 2012-2012). -105879 (corresponding US2012 / 0126124A1), JP2001-330677A, JP2012-145537 (corresponding US2012 / 0181438A1).
  • ISS type radiation emitted from the radiation source passes through the photoelectric conversion panel and enters the scintillator, and the scintillator emits light in a region near the photoelectric conversion panel on the radiation incident side. Efficiency is improved.
  • the ISS type a radiation image having excellent image quality and brightness can be obtained.
  • the tip of the abnormally grown crystal protrudes from the surface of the scintillator, so that a load is applied to the housing.
  • the tip of the abnormally grown crystal is damaged by contact with the housing or the like, and normal columnar crystals existing around this are also damaged.
  • a circuit board or the like mounted with a signal processing unit for generating image data is disposed facing the scintillator, so that the tip of the abnormally grown crystal is damaged by contact with the circuit board or the like.
  • An object of the present invention is to provide an ISS type radiation image detection apparatus capable of preventing the scintillator from being damaged.
  • the radiation image detection apparatus of the present invention includes a scintillator, a photoelectric conversion panel, and a buffer layer.
  • the photoelectric conversion panel, the scintillator, and the buffer layer are arranged in this order from the side on which radiation is incident from the radiation source during imaging.
  • the scintillator contains cesium iodide and converts radiation into visible light.
  • a scintillator is vapor-deposited, and a plurality of pixels that generate electric charges by photoelectrically converting visible light are formed.
  • the buffer layer is provided on the surface of the scintillator and protects protrusions generated on the surface of the scintillator.
  • a support substrate is provided on the opposite side of the buffer layer from the scintillator.
  • the support substrate is preferably a circuit board provided with a signal processing unit that generates image data based on charges generated by the photoelectric conversion panel.
  • the photoelectric conversion panel, scintillator, buffer layer, and support substrate are preferably housed in a monocoque housing.
  • This spacer may cover the periphery of the scintillator.
  • an adhesive layer is formed on the scintillator side surface of the buffer layer.
  • the adhesive force on the scintillator side surface of the adhesive layer is preferably weaker than the adhesive force on the buffer layer side surface.
  • the buffer layer preferably has viscoelasticity.
  • This buffer layer is preferably formed of a polymer material or carbon nanotubes.
  • This buffer layer preferably has conductivity.
  • the scintillator has a non-columnar crystal layer and a plurality of columnar crystals formed on the non-columnar crystal layer.
  • the non-columnar crystal layer is in close contact with the photoelectric conversion panel, and the protrusions are abnormally grown columnar crystals. It is preferable that it is the front-end
  • the buffer layer preferably has one end bonded to the support substrate and the other end pressed against the sealing film.
  • a light reflecting film that reflects visible light emitted from the tip portions of a plurality of columnar crystals. It is preferable that a protective film covering the tip portions of the plurality of columnar crystals is provided, the light reflecting film is formed on the protective film, and the sealing film covers the light reflecting film.
  • the pixel preferably includes a photodiode that converts visible light into electric charge, and a switching element for reading out electric charge generated by the photodiode.
  • a translucent substrate that transmits visible light is provided on the side opposite to the radiation incident side of the photoelectric conversion panel, and the scintillator is deposited on the translucent substrate.
  • This translucent substrate is preferably an OPS film.
  • the scintillator can be prevented from being damaged because the buffer layer that protects the protrusion generated on the surface of the scintillator is provided.
  • FIG. 1 It is a partially broken perspective view of an X-ray image detection apparatus. It is sectional drawing of an X-ray image detection apparatus. It is sectional drawing of FPD. It is a circuit diagram which shows the structure of a photoelectric conversion panel. It is explanatory drawing which shows the use condition of an X-ray image detection apparatus. It is sectional drawing which shows the 1st modification of an X-ray image detection apparatus. It is sectional drawing which shows the 2nd modification of an X-ray image detection apparatus. It is sectional drawing which shows the 3rd modification of an X-ray image detection apparatus. It is sectional drawing which shows the 4th modification of an X-ray image detection apparatus. It is a perspective view which shows the 1st example of an adhesion layer.
  • an X-ray image detection apparatus 10 includes a flat panel detector (FPD: Flat Panel Detector) 11, a circuit board 12, a control unit 13, and a casing 14 for housing them.
  • the housing 14 has a monocoque structure integrally formed of carbon fiber reinforced resin (carbon fiber) that has high X-ray XR permeability, is lightweight, and has high durability.
  • An opening (not shown) is formed on one side surface of the housing 14, and a lid member (not shown) is formed so as to close the opening.
  • the FPD 11, the circuit board 12, and the control unit 13 are inserted into the housing 14 from this opening.
  • the upper surface 14a of the housing 14 is an irradiation surface irradiated with X-rays XR emitted from an X-ray source 60 (see FIG. 5) and transmitted through a subject (patient) 61 (see FIG. 5).
  • the X-ray image detection apparatus 10 has the same size as a conventional X-ray film cassette and can be used in place of the X-ray film cassette, and is therefore referred to as an electronic cassette.
  • the FPD 11 and the circuit board 12 are arranged in order from the irradiation surface 14 a side to which the X-ray XR is irradiated during imaging.
  • the circuit board 12 is mounted with an integrated circuit (IC) chip that performs signal processing and the like, and is fixed to the housing 14.
  • the control unit 13 is disposed on one end side along the short direction in the housing 14.
  • the control unit 13 accommodates a microcomputer and a battery (both not shown). This microcomputer communicates with a console (not shown) connected to the X-ray source 60 via a wired or wireless communication unit (not shown) to control the operation of the FPD 11.
  • the FPD 11 includes a scintillator 20 that converts X-rays XR into visible light, and a photoelectric conversion panel 21 that converts the visible light into electric charge.
  • the X-ray image detection device 10 is an ISS (Irradiation Side Sampling) type, and the photoelectric conversion panel 21 is incident from the scintillator 20 on the X-ray XR incident side from the side (irradiation surface 14a side) where the X-ray XR is incident during imaging. Is arranged.
  • the scintillator 20 absorbs the X-ray XR transmitted through the photoelectric conversion panel 21 and generates visible light.
  • the photoelectric conversion panel 21 receives visible light emitted from the scintillator 20, performs photoelectric conversion, and generates electric charges.
  • the photoelectric conversion panel 21 has an X-ray incident side attached to the irradiation surface 14a side of the housing 14 via an adhesive layer 22 made of polyimide or the like.
  • the scintillator 20 is formed by evaporating thallium activated cesium iodide (CsI: Tl) on the surface 21 a of the photoelectric conversion panel 21.
  • the scintillator 20 has a plurality of columnar crystals 20a and non-columnar crystal layers 20b, and the non-columnar crystal layers 20b are formed on the photoelectric conversion panel 21 side.
  • the columnar crystal 20a is a crystal grown from the non-columnar crystal layer 20b, and has a tip portion 20c on the opposite side to the non-columnar crystal layer 20b.
  • a plurality of columnar crystals 20a are formed on the non-columnar crystal layer 20b, and each columnar crystal 20a is separated from the adjacent columnar crystal 20a via an air layer. Since the columnar crystal 20a has a refractive index of about 1.81, which is larger than the refractive index of the air layer (about 1.0), it has a light guide effect. Due to this light guiding effect, most of the visible light generated in each columnar crystal 20a propagates in the generated columnar crystal 20a and enters the photoelectric conversion panel 21 via the non-columnar crystal layer 20b.
  • CsI Tl deposited on the defect 23 grows abnormally during the deposition, and has a diameter and length. Becomes an abnormally grown crystal 20d larger than the normal columnar crystal 20a.
  • the tip (projection) 20e of the abnormally grown crystal 20d protrudes from the surface of the scintillator 20 in the direction opposite to the photoelectric conversion panel 21.
  • a protective film 24 is formed so as to cover the tip 20c of each columnar crystal 20a and the tip 20e of the abnormally grown crystal 20d.
  • the protective film 24 is made of hot melt resin.
  • the hot melt resin is an adhesive resin that does not contain water or a solvent, is a solid at room temperature, and is made of a 100% non-volatile thermoplastic material.
  • the protective film 24 contains light reflective fine particles (not shown). Examples of the light-reflecting fine particles include metal fine particles such as gold, silver, aluminum, and nickel, and metal oxides such as titanium oxide (TiO 2 ), silicon oxide (SiO 2 ), and aluminum oxide (Al 2 O 3 ). .
  • the protective film 24 is formed, for example, by melting a hot melt resin in which light-reflecting fine particles are dispersed, and applying this to the surface of the scintillator 20 using a coating apparatus.
  • a light reflecting film 25 made of a metal such as aluminum (Al) is provided on the surface of the protective film 24.
  • the light reflecting film 25 is stuck on the protective film 24 by a method such as laminating.
  • the protective film 24 and the light reflecting film 25 reflect the visible light emitted from the tip 20c of the columnar crystal 20a and return it to the columnar crystal 20a, thereby improving the conversion efficiency of the X-ray XR into charges.
  • the sealing film 26 is formed by a thermal CVD (Chemical Vapor Deposition) method so as to cover the light reflecting film 25 and the side surface of the scintillator 20.
  • the sealing film 26 seals the scintillator 20 with the photoelectric conversion panel 21.
  • the sealing film 26 is formed of polyparaxylene having moisture resistance.
  • Parylene C trade name, manufactured by Japan Parylene Co., Ltd .; “Parylene” is a registered trademark
  • the circuit board 12 is disposed on the side opposite to the X-ray incident side of the scintillator 20 via a buffer layer 27.
  • the circuit board 12 is fixed to a fixing portion 28 fixed to the side portion 14b of the housing 14 with screws or an adhesive.
  • the circuit board 12 and the photoelectric conversion panel 21 are electrically connected via a flexible printed board 29.
  • the flexible printed circuit board 29 is connected to an external terminal 21b provided at the end of the photoelectric conversion panel 21 by a so-called TAB (Tape / Automated / Bonding) bonding method.
  • a gate driver 29a for driving the photoelectric conversion panel 21 and a charge amplifier 29b for converting the electric charge output from the photoelectric conversion panel 21 into a voltage signal are mounted as an IC chip.
  • a signal processing unit 12a that generates image data based on the voltage signal converted by the charge amplifier 29b and an image memory 12b that stores image data are mounted as an IC chip.
  • the buffer layer 27 is bonded to the circuit board 12 via the adhesive layer 27a. That is, the circuit board 12 is also a support board that supports the buffer layer 27.
  • the buffer layer 27 and the sealing film 26 of the scintillator 20 are not bonded, and the buffer layer 27 is pressed against the sealing film 26.
  • the buffer layer 27 has enough elasticity not to crush the tip 20e of the abnormally grown crystal 20d, and wraps and protects the tip 20e.
  • the material of the buffer layer 27 is preferably a viscoelastic polymer material (for example, isotactic polypropylene or poly- ⁇ -methylstyrene).
  • Viscoelasticity is a property in which elasticity and viscosity are combined. Specifically, a viscoelastic substance is deformed at a slower speed than an elastic body when a load is applied, and has a low resilience such that when the load is eliminated, the original shape is restored at a slower speed than the elastic body.
  • the polymer material has viscoelasticity because it is composed of a crystalline phase and an amorphous phase.
  • the buffer layer 27 is a viscoelastic body
  • the buffer layer 27 when a load is applied from the housing 14 to the buffer layer 27 via the circuit board 12, the buffer layer 27 is slowly deformed and then slowly restored. Thereby, the buffer layer 27 softens the impact on the scintillator 20 and prevents the scintillator 20 from being damaged.
  • the buffer layer 27 supports the scintillator 20 toward the photoelectric conversion panel 21, and prevents the scintillator 20 from being peeled off from the photoelectric conversion panel 21.
  • the photoelectric conversion panel 21 has an insulating substrate 30 formed of glass such as non-alkali glass, and a plurality of pixels 31 arranged thereon.
  • the thickness of the insulating substrate 30 is preferably 0.5 mm or less in order to improve the X-ray transparency.
  • Each pixel 31 includes a thin film transistor (TFT) 32 and a photodiode (PD) 33 connected to the TFT 32.
  • the PD 33 photoelectrically converts the visible light generated by the scintillator 20 to generate charges and accumulates them.
  • the TFT 32 is a switching element for reading out charges accumulated in the PD 33.
  • the TFT 32 includes a gate electrode 32g, a source electrode 32s, a drain electrode 32d, and an active layer 32a.
  • the TFT 32 is an inverted stagger type in which the gate electrode 32g is disposed below the source electrode 32s and the drain electrode 32d.
  • the gate electrode 32g is formed on the insulating substrate 30.
  • a charge storage electrode 34 is formed in order to increase the charge storage capacity of each pixel 31. A ground voltage is applied to the charge storage electrode 34.
  • An insulating film 35 made of silicon nitride (SiN x ) or the like is formed on the insulating substrate 30 so as to cover the gate electrode 32g and the charge storage electrode 34.
  • An active layer 32a is disposed on the insulating film 35 so as to face the gate electrode 32g.
  • the source electrode 32s and the drain electrode 32d are arranged on the active layer 32a with a predetermined interval. A portion of the drain electrode 32 d extends on the insulating film 35, and faces the charge storage electrode 34 via the insulating film 35 to constitute a capacitor 34 a.
  • the gate electrode 32g, the source electrode 32s, the drain electrode 32d, and the charge storage electrode 34 are made of aluminum (Al) or copper (Cu).
  • the active layer 32a is made of amorphous silicon.
  • a TFT protective film 36 made of silicon nitride (SiN x ) or the like is formed on the insulating film 35 so as to cover the source electrode 32s, the drain electrode 32d, and the active layer 32a.
  • a first planarizing film 37 having a flat surface is formed so as to eliminate the uneven structure due to the TFT 32.
  • the first planarization film 37 is formed by applying an organic material.
  • a contact hole 38 is formed in the first planarizing film 37 and the TFT protective film 36 at a position facing the drain electrode 32d.
  • the PD 33 is connected to the drain electrode 32 d of the TFT 32 through the contact hole 38.
  • the PD 33 is formed by a lower electrode 33a, a semiconductor layer 33b, and an upper electrode 33c.
  • the lower electrode 33a is formed on the first planarization film 37 so as to cover the inside of the contact hole 38 and the TFT 32, and is connected to the drain electrode 32d.
  • the lower electrode 33a is made of aluminum (Al) or indium tin oxide (ITO).
  • the semiconductor layer 33b is stacked on the lower electrode 33a.
  • the semiconductor layer 33b is PIN-type amorphous silicon, in which an n + layer, an i layer, and a p + layer are stacked in order from the bottom.
  • the upper electrode 33c is formed on the semiconductor layer 33b.
  • the upper electrode 33c is formed of a highly light-transmitting material such as indium tin oxide (ITO) or indium zinc oxide (IZO).
  • a second flattening film 39 having a flat surface is formed so as to eliminate the uneven structure due to the PD33. Similar to the first planarization film 37, the second planarization film 39 is formed by applying an organic material.
  • a contact hole 40 is formed in the second planarization film 39 so as to expose the upper electrode 33c.
  • the common electrode wiring 41 is connected to the upper electrode 33 c through the contact hole 40.
  • the common electrode wiring 41 is commonly connected to the upper electrode 33c of each PD 33, and is used to apply a bias voltage to the upper electrode 33c.
  • the upper electrode 33c is made of aluminum (Al) or copper (Cu).
  • a protective insulating film 42 is formed on the second planarization film 39 and the common electrode wiring 41.
  • the protective insulating film 42 is formed of silicon nitride (SiN x ) or the like, like the TFT protective film 36.
  • the external terminal 21 b includes a terminal electrode 43 formed on the insulating substrate 30 and a metal film 45 provided so as to cover the contact hole 44 formed in the insulating film 35 and the TFT protective film 36. .
  • the scintillator 20 is formed on the flat surface of the second flattening film 39 via a protective insulating film 42.
  • a non-columnar crystal layer 20b is deposited on the protective insulating film 42 by vacuum deposition.
  • the non-columnar crystal layer 20b is composed of a plurality of particulate crystals and has a small adhesion between the crystals (a high space filling rate), and thus has high adhesion with the protective insulating film.
  • the columnar crystal 20a is a crystal grown by vacuum deposition on the basis of the non-columnar crystal layer 20b.
  • the diameter of the columnar crystal 20a is substantially uniform along the longitudinal direction, and is about 6 ⁇ m.
  • the thickness of the scintillator 20 is preferably 400 ⁇ m or more, and more preferably in the range of 500 ⁇ m to 650 ⁇ m in order to improve the X-ray XR absorption rate.
  • the abnormally grown crystal 20d is formed on the defect 23.
  • the protective film 24 is formed so as to cover the tip 20c of each columnar crystal 20a and the tip 20e of the abnormally grown crystal 20d, and the light reflecting film 25 is formed on the surface of the protective film 24. Has been. A sealing film 26 is formed around the scintillator 20.
  • the pixels 31 are arranged in a two-dimensional matrix on the insulating substrate 30.
  • Each pixel 31 includes the TFT 32, the PD 33, and the capacitor 34a as described above.
  • Each pixel 31 is connected to the gate wiring 50 and the data wiring 51.
  • the gate lines 50 extend in the row direction and are arranged in a plurality in the column direction.
  • a plurality of data lines 51 are arranged in the row direction so as to extend in the column direction and cross the gate lines 50.
  • the gate wiring 50 is connected to the gate electrode 32 g of the TFT 32.
  • the data line 51 is connected to the drain electrode 32 d of the TFT 32.
  • One end of the gate wiring 50 is connected to the gate driver 29a.
  • One end of the data line 51 is connected to the charge amplifier 29b.
  • the gate driver 29a sequentially applies a gate drive signal to each gate line 50, and turns on the TFT 32 connected to each gate line 50. When the TFT 32 is turned on, the charges accumulated in the PD 33 and the capacitor 34a are output to the data wiring 51.
  • the charge amplifier 29b has a charge storage capacitor (not shown), integrates the charge output to the data wiring 51, and converts it into a voltage signal.
  • the signal processing unit 12a generates image data by performing A / D conversion, gain correction processing, and the like on the voltage signal output from the charge amplifier 29b.
  • the image memory 12b is composed of a flash memory or the like, and stores image data generated by the signal processing unit 12a. Image data stored in the image memory 12b can be read to the outside via a wired or wireless communication unit (not shown).
  • a photographer places a subject 61 on the X-ray image detection device 10 and places the subject 61 on the subject 61.
  • the X-ray source 60 is disposed so as to face each other.
  • the X-ray XR is emitted from the X-ray source 60, and the X-ray XR transmitted through the subject 61 is irradiated onto the irradiation surface 14a of the X-ray image detection apparatus 10.
  • the X-ray XR irradiated to the irradiation surface 14 a passes through the adhesive layer 22 and the photoelectric conversion panel 21 in order and enters the scintillator 20.
  • the scintillator 20 absorbs the incident X-ray XR and generates visible light. Visible light is generated in the scintillator 20 mainly on the non-columnar crystal layer 20b side in the columnar crystal 20a. Visible light generated in the columnar crystal 20a propagates in each columnar crystal 20a by the light guide effect, passes through the non-columnar crystal layer 20b, and enters the photoelectric conversion panel 21. In addition, the visible light propagating in the columnar crystal 20a in the direction of the tip 20c and emitted from the tip 20c is reflected by the protective film 24 and the light reflecting film 25 and returns to the columnar crystal 20a, and the non-columnar crystal layer The light passes through 20b and enters the photoelectric conversion panel 21.
  • Visible light incident on the photoelectric conversion panel 21 is converted into electric charge by the PD 33 for each pixel 31, and the electric charge is accumulated in the PD 33 and the capacitor 34a.
  • a gate drive signal is sequentially applied to the gate electrode 32g of the TFT 32 through the gate wiring 50 by the gate driver 29a.
  • the TFTs 32 arranged in the row direction are sequentially turned on in the column direction, and the charges accumulated in the PD 33 and the capacitor 34a are output to the data wiring 51 via the turned-on TFTs 32.
  • the charge output to the data wiring 51 is converted into a voltage signal by the charge amplifier 29b and input to the signal processing unit 12a.
  • Image data is generated by the signal processor 12a based on the voltage signals for all the pixels 31 and stored in the image memory 12b.
  • the X-ray image detection apparatus 10 may be slightly bent by a load from the subject 61 as shown by a two-dot chain line in FIG.
  • the housing 14 has a monocoque structure and is excellent in weight reduction, but has a low load resistance and is easily bent. Since the X-ray image detection apparatus 10 is an ISS type and the photoelectric conversion panel 21 is disposed on the irradiation surface 14 a side, the load from the subject 61 acts on the photoelectric conversion panel 21 via the housing 14.
  • the scintillator 20 When the photoelectric conversion panel 21 is bent, the scintillator 20 is also bent. However, since the scintillator 20 is protected by the buffer layer 27, the scintillator 20 does not come into contact with the circuit board 12 and is not damaged.
  • the buffer layer 27 protects the scintillator 20 by relaxing the load applied from the circuit board 12 side. Further, the buffer layer 27 protects the tip 20e of the abnormally grown crystal 20d and prevents the tip 20e from being damaged. For this reason, an X-ray image with few image defects is obtained.
  • the photoelectric conversion panel 21 may be fixed to the housing 14 with screws or the like.
  • a spacer 71 as a support may be provided between the photoelectric conversion panel 21 and the circuit board 12.
  • the spacer 71 is made of an elastic body such as rubber, for example.
  • the spacer 71 is disposed on the periphery of the photoelectric conversion panel 21 and the circuit board 12 so as to surround the scintillator 20.
  • the lower end of the spacer 71 is bonded to the circuit board 12, and the upper end is bonded between the formation region of the scintillator 20 on the surface 21a of the photoelectric conversion panel 21 and the external terminal 21b.
  • a metal film such as aluminum is used as the sealing film 72, and the end of the sealing film 72 is bonded to the surface 21a via the adhesive layer 73 without bending. Yes. It is preferable to use an ultraviolet curable adhesive as the material of the adhesive layer 73.
  • an ultraviolet curable adhesive is applied to the end portion of the sealing film 72 and brought into contact with the surface 21a of the photoelectric conversion panel 21, and ultraviolet rays are irradiated through the photoelectric conversion panel 21 while maintaining this state.
  • the end portion of the sealing film 72 can be bonded to the photoelectric conversion panel 21.
  • the scintillator 20 is sealed in a space surrounded by the photoelectric conversion panel 21, the circuit board 12, and the spacer 71. Therefore, the moisture resistance of the scintillator 20 is further improved.
  • the sealing film 72 can be omitted.
  • the adhesive layer 22 can be omitted, and the photoelectric conversion panel 21 can be supported by the circuit board 12 and the spacer 71.
  • the thermal expansion coefficient of the circuit board 12 is approximately the same as the thermal expansion coefficient of the photoelectric conversion panel 21. If the thermal expansion coefficients of the two are approximately the same, when the circuit board 12 is warped due to a temperature change, the photoelectric conversion panel 21 is warped to the same extent, so that the influence on each other is small. Further, the influence of the warp may be prevented by making one of the upper end and the lower end of the spacer 71 non-bonded.
  • the adhesive layer 73 may be formed of a disassembling adhesive whose adhesiveness is lowered by irradiation with ultraviolet rays or the like.
  • the scintillator 20 can be easily peeled off from the photoelectric conversion panel 21 during repair or the like.
  • the scintillator 20 is directly vapor-deposited on the photoelectric conversion panel 21, as shown in FIG. 8, the translucent board
  • substrate 80 is affixed on the opposite side to the radiation incident side of the photoelectric conversion panel 21. As shown in FIG. The scintillator 20 may be deposited on the translucent substrate 80. The translucent substrate 80 is attached to the photoelectric conversion panel 21 via the adhesive layer 81.
  • the translucent substrate 80 and the adhesive layer 81 are highly transmissive with respect to visible light. It is preferable to have light properties.
  • transparent polyimide, polyallate resin, OPS (Oriented Polystyrene Sheet) film, aramid, or the like can be used.
  • substrate 80 is used as a vapor deposition board
  • the OPS film has a heat resistance of about 250 ° C.
  • the OPS film is most preferable as a material for the light-transmitting substrate 80.
  • a translucent epoxy resin, an acrylic resin, or the like can be used as a material for the adhesive layer 81.
  • the adhesive layer 81 may be formed of an adhesive material or a dismantling adhesive so that the photoelectric conversion panel 21 and the translucent substrate 80 on which the scintillator 20 is deposited can be easily separated during repair or the like. . Furthermore, the light-transmitting substrate 80 may be pressed against the photoelectric conversion panel 21 without being provided with the adhesive layer 81 and may be fixed to the housing 14 or the like.
  • the buffer layer 27 is formed of a polymer material having viscoelasticity.
  • the buffer layer 27 may be formed of carbon nanotubes having viscoelasticity. Since carbon nanotubes have electrical conductivity, when the buffer layer 27 is formed of carbon nanotubes, the buffer layer 27 is connected to the ground to prevent the buffer layer 27 from being charged and prevent the scintillator 20 from electrostatic damage. Can do.
  • an antistatic sheet having a surface resistivity of 10 9 ⁇ or less may be laminated on the surface of the buffer layer 27.
  • the antistatic sheet is provided between the buffer layer 27 and the scintillator 20 and / or between the buffer layer 27 and the circuit board 12.
  • an antistatic silicone rubber, a kind of polyurethane foam, PORON (registered trademark), an antistatic low resilience sponge which is a cross-linked foam of styrene elastomer, and the like can be used.
  • the buffer layer 27 may be formed of these materials.
  • thermal conductivity is improved and heat dissipation is obtained.
  • the upper surface of the buffer layer 27 is pressed against the sealing film 26 of the scintillator 20, but it is also preferable to provide an adhesive layer 90 on the upper surface of the buffer layer 27 as shown in FIG.
  • the buffer layer 27 is prevented from being greatly displaced laterally with respect to the scintillator 20, and damage to the tip 20e of the abnormally grown crystal 20d due to lateral displacement of the buffer layer 27 is prevented. Can be prevented.
  • the adhesive layer 90 has a weak adhesive force on the scintillator 20 side and a strong adhesive force on the buffer layer 27 side.
  • this adhesion layer 90 for example, 4591HL (weak adhesion side: 0.2 N / cm, strong adhesion side: 4.3 N / cm) manufactured by Sumitomo 3M Co., Ltd. is adhered on one side and the other side. Double-sided tapes with different forces can be used.
  • the adhesive strength on the weak adhesive side is preferably less than 1 N / cm, and the adhesive strength on the strong adhesive side is preferably 1 N / cm or more.
  • an adhesive layer 91 having a first adhesive surface 91a and a second adhesive surface 91b having different adhesive areas may be used.
  • the first adhesive surface 91 a is formed of an adhesive tape having substantially the same area as the upper surface of the buffer layer 27 and is adhered to the upper surface of the buffer layer 27.
  • the second adhesive surface 91 b is formed by providing a strip-shaped adhesive tape along each side, and is adhered to the sealing film 72 of the scintillator 20. Since the second adhesive surface 91b has a smaller area than the first adhesive surface 91a, the adhesive force is weak.
  • the area of the second adhesive surface 91b is preferably less than or equal to half of the area of the first adhesive surface 91a.
  • an adhesive layer 92 having a flat first adhesive surface 92a and a second adhesive surface 92b formed by arranging three strip-shaped adhesive tapes in parallel is used. May be.
  • the adhesive layer 92 is more easily peeled off from the sealing film 72.
  • the adhesive layer which has the 1st adhesive surface 93a of planar shape, and the 2nd adhesive surface 93b formed by providing a small square-shaped adhesive tape in the four corners and the center part. 93 may be used.
  • the shape and arrangement of the second adhesive surface are not limited to the examples shown in FIGS. 10 to 12, and may be changed as appropriate.
  • viscoelastic gel or oil may be used as the material of the buffer layer 27.
  • This gel is mainly made of silicon resin or epoxy resin.
  • Alpha Gel registered trademark
  • this oil is, for example, silicon oil.
  • alpha gel does not have adhesiveness on the surface, it can prevent lateral displacement of the buffer layer 27 because it has good followability to unevenness.
  • alpha gel is excellent also in the peelability from the sealing film 72 of the scintillator 20, heat dissipation, an antistatic property, etc.
  • the light reflecting film 25 is formed on the protective film 24 of the scintillator 20 and the sealing film 26 is formed on the light reflecting film 25.
  • a sealing film may be formed, and a light reflecting film may be formed on the sealing film.
  • a metal thin film 90 such as aluminum having light reflectivity is deposited on the tip 20c of the columnar crystal 20a, and hot melt is applied so as to cover the tip 20c on which the metal thin film 90 is formed.
  • the protective film 91 may be formed of resin.
  • the circuit board 12 is fixed to the fixing portion 28.
  • an insertion rail (not shown) is provided in the casing 14, and an opening (not shown) provided on the side surface of the casing 14 is provided.
  • the circuit board 12 may be inserted into the housing 14 using an insertion rail, and the circuit board 12 may be fixed at a predetermined position on the insertion rail.
  • a positioning member is provided in a portion in the casing 14 facing the opening, and the circuit board 12 is positioned by the positioning member and then fixed.
  • the photoelectric conversion panel 21 and the scintillator 20 may be inserted into the housing 14 and fixed.
  • the buffer layer 27 is pressed against the sealing film 26 of the scintillator 20, but the upper surface of the buffer layer 27 is sealed with the scintillator 20 via the adhesive layer 100 as shown in FIG. 14. It may be adhered to the film 26.
  • the module 101 in which the FPD 11, the buffer layer 27, the circuit board (supporting board) 12, and the flexible printed board 29 are integrated is improved, and handling properties are improved. As described above, the module 101 facilitates insertion into the housing 14.
  • the thickness of the scintillator 20 may be changed depending on the usage, but the thickness W of the module 101 can be made constant by adjusting the thickness of the buffer layer 27 in accordance with the thickness of the scintillator 20.
  • the buffer layer 27 is preferable for adjusting the thickness because it is the lightest material in the module 101 and is viscoelastic (low repulsion) and easily maintains a constant shape.
  • the thickness T of the module 101 constant, the same casing 14 can be used regardless of the thickness of the scintillator 20, and the manufacturing becomes efficient.
  • the thickness of the scintillator 20 is set to a thickness (for example, 800 ⁇ m) larger than the above-described 500 ⁇ m to 650 ⁇ m in the case of high-pressure imaging when imaging a subject having high X-ray absorption.
  • the buffer layer 27 may be made thinner by the amount that the scintillator 20 is made thicker.
  • the thickness of the insulating substrate 30 of the photoelectric conversion panel 21 may be changed depending on the usage, it is preferable to adjust the buffer layer 27 in consideration of the thickness of the entire FPD 11.
  • the thickness T of the module 101 may be set to a thickness that allows the buffer layer 27 to sufficiently protect the tip portion 20e of the abnormally grown crystal 20d, even in the case of the maximum value of the thickness of the FPD 11 assumed for the seed use application. preferable.
  • the photoelectric conversion panel 21 is likely to be warped because the thickness of the insulating substrate 30 is as thin as 0.5 mm or less.
  • the buffer layer 27 also has an effect of absorbing the influence of the warp of the photoelectric conversion panel 21 caused by the load from the subject 61 or the like. Further, since it is considered that the scintillator 20 and the buffer layer 27 are displaced in the surface direction due to the warpage of the photoelectric conversion panel 21, the buffer layer 27 is more than the area of the scintillator 20 so as to cover the surface of the scintillator 20 with certainty. Larger is preferred.
  • the spacer 71 shown in FIG. 7 may be disposed between the photoelectric conversion panel 21 and the circuit board 12 in the module 101. Further, a support substrate that supports the buffer layer 27 may be provided separately from the circuit board 12.
  • the sealing film 26 made of polyparaxylene is used, but a sealing film made of PET or aluminum may be used. In this case, it is preferable to form the sealing film so as to cover the scintillator 20 and the end of the sealing film is located inside the tapered end of the second planarization film 39.
  • the sealing film can be formed by a vapor deposition method using a mask or a hot melt method.
  • the protective film 24, the light reflection film 25, and the sealing film 26 are each formed separately, after laminating these into one sheet form, a vacuum bonding apparatus is used. It may be used and attached to the surface of the scintillator 20.
  • the laminating apparatus 110 includes an upper stage 111, a lower stage 112, and a pressing member 113.
  • the upper stage 111 holds the photoelectric conversion panel 21 on which the scintillator 20 is deposited by air suction.
  • the scintillator 20 is disposed below the photoelectric conversion panel 21.
  • the lower stage 112 is disposed below the upper stage 111.
  • the pressing member 113 is provided on the lower stage 112 and faces the upper stage 111.
  • the pressing member 113 is formed of an elastic material having a concavo-convex shape on a flat surface (for example, a sponge having a closed cell structure).
  • a laminated sheet 114 having a three-layer structure in which the protective film 24, the light reflecting film 25, and the sealing film 26 are laminated is placed.
  • the protective film 24 is formed of an adhesive or hot melt resin having a thickness of 30 ⁇ m to 100 ⁇ m.
  • the adhesive for example, Panaclean PD-R5 (Panac Corporation; “Panaclean” is a registered trademark) and DAITAC ZB7032W (DIC Corporation; “DAITAC” is a registered trademark) are used.
  • the hot melt resins include Polyester SP170 (Nippon Synthetic Chemical Industry Co., Ltd .; “Polyester” is a registered trademark), Hirodine 7589 (Yasuhara Chemical Co., Ltd.), Aronmelt PES-111EE (Toagosei Co., Ltd .; “Aronmelt”) Registered trademark) or the like.
  • the light reflecting film 25 is made of aluminum having a thickness of 5 ⁇ m to 50 ⁇ m.
  • the sealing film 26 is made of polyethylene terephthalate (PET) or nylon having a thickness of 10 ⁇ m to 100 ⁇ m.
  • the laminating apparatus 110 raises the lower stage 112 toward the upper stage 111 by an elevating mechanism (not shown).
  • the pressing member 113 is deformed according to the shapes of the scintillator 20 and the photoelectric conversion panel 21 and presses the laminated sheet 114 with an equal force. Thereby, the lamination sheet 114 adheres to the surface of the scintillator 20 and the photoelectric conversion panel 21. Thereafter, the lower stage 112 is lowered by the elevating mechanism, and the photoelectric conversion panel 21 in which the scintillator 20 is covered with the laminated sheet 114 is taken out from the laminating apparatus 110.
  • the pressure applied to the scintillator 20 and the photoelectric conversion panel 21 by the pressing member 113 is preferably about 0.1 Mpa to 0.8 Mpa.
  • the sponge having the closed cell structure FR-200, FR-350 (Sun Polymer Co., Ltd.), FR335, FR235 (Tigers Polymer Co., Ltd.), FSB735N (Kureha Elastomer Co., Ltd.), or the like can be used.
  • the uneven shape on the surface of the laminated sheet 114 corresponds to the uneven shape present on the surface of the pressing member 113.
  • the interval S between the concave and convex portions of the concavo-convex shape is not less than the column diameter D of the columnar crystal 20a and smaller than the width W of the contact portion of the laminated sheet 114 with the surface 21a of the photoelectric conversion panel 21 (D ⁇ S ⁇ W). It is set to become. Further, the amount of unevenness of the uneven shape (the difference in height between the concave portion and the convex portion) H is set to be 5 ⁇ m to 30 ⁇ m.
  • the uneven shape on the surface of the laminated sheet 114 also has an effect of preventing a positional shift due to an impact or the like of the buffer layer 27 arranged on the laminated sheet 114.
  • the buffer layer 27 is formed of a viscoelastic polymer material or carbon nanotube.
  • the buffer layer 27 may be formed of a translucent material.
  • an acrylic gel transparent sheet for example, MAKELINGEL (registered trademark) manufactured by Kyodo Giken Chemical Co., Ltd.
  • an antistatic ultrathin silicone rubber for example, Sirius manufactured by Fuso Rubber Sangyo Co., Ltd.
  • the second photoelectric conversion panel 120 can be provided on the opposite side of the buffer layer 27 from the scintillator 20 as shown in FIG. Here, the light reflection film 25 described above is removed.
  • the second photoelectric conversion panel 120 has the same configuration as the above-described photoelectric conversion panel (first photoelectric conversion panel) 21.
  • the second photoelectric conversion panel 120 generates electric charges by photoelectrically converting the visible light generated by the scintillator 20 and transmitted through the buffer layer 27.
  • the active layer 32a of the TFT 32 is formed of amorphous silicon.
  • the active layer 32a is formed of amorphous oxide (for example, In—O system), organic semiconductor material, carbon nanotube, or the like. May be.
  • the semiconductor layer 33b of the PD 33 is formed of amorphous silicon, but instead of this, an organic photoelectric conversion material (for example, a quinacridone organic compound or a phthalocyanine organic compound) may be formed.
  • an organic photoelectric conversion material for example, a quinacridone organic compound or a phthalocyanine organic compound
  • Amorphous silicon has a broad absorption spectrum, but organic photoelectric conversion materials have a sharp absorption spectrum in the visible range, so they hardly absorb electromagnetic waves other than visible light emitted by the scintillator 20 and suppress noise. can do.
  • X-rays are used as radiation.
  • radiation other than X-rays such as ⁇ -rays and ⁇ -rays may be used.
  • the present invention has been described by taking an electronic cassette as a portable radiological image detection device as an example, but the present invention is a standing radiograph or radiological image detection device, It can also be applied to a mammography apparatus.

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
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  • Measurement Of Radiation (AREA)
PCT/JP2013/075857 2012-09-27 2013-09-25 Dispositif de détection d'image radiographique Ceased WO2014050861A1 (fr)

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JP2012213876 2012-09-27
JP2012-213876 2012-09-27
JP2013182220A JP2014081364A (ja) 2012-09-27 2013-09-03 放射線画像検出装置
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EP3940429A1 (fr) * 2020-07-14 2022-01-19 Canon Kabushiki Kaisha Panneau d'imagerie par rayonnement, appareil d'imagerie par rayonnement, système d'imagerie par rayonnement et plaque de scintillateur

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JP2016070890A (ja) * 2014-10-01 2016-05-09 キヤノン株式会社 放射線撮影装置および放射線撮影システム
JP6487263B2 (ja) * 2015-04-20 2019-03-20 浜松ホトニクス株式会社 放射線検出器及びその製造方法
JP6555955B2 (ja) * 2015-07-15 2019-08-07 キヤノン株式会社 放射線検出装置及び放射線撮像システム
JP6971552B2 (ja) * 2016-10-18 2021-11-24 富士フイルム株式会社 放射線検出装置
EP3770641A4 (fr) 2018-03-19 2021-04-28 FUJIFILM Corporation Détecteur de rayonnement, dispositif d'imagerie radiologique et procédé de production
JP7240998B2 (ja) * 2018-11-13 2023-03-16 キヤノン電子管デバイス株式会社 放射線検出モジュール、放射線検出器、及び放射線検出モジュールの製造方法
WO2020100809A1 (fr) * 2018-11-13 2020-05-22 キヤノン電子管デバイス株式会社 Module de détection de rayonnement, détecteur de rayonnement et procédé de production de module de détection de rayonnement
JP7450486B2 (ja) * 2020-07-27 2024-03-15 キヤノン株式会社 放射線撮像パネル、放射線撮像装置、放射線撮像システム、放射線撮像パネルの製造方法、および、シンチレータプレート
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