JP6487263B2 - 放射線検出器及びその製造方法 - Google Patents
放射線検出器及びその製造方法 Download PDFInfo
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- JP6487263B2 JP6487263B2 JP2015085687A JP2015085687A JP6487263B2 JP 6487263 B2 JP6487263 B2 JP 6487263B2 JP 2015085687 A JP2015085687 A JP 2015085687A JP 2015085687 A JP2015085687 A JP 2015085687A JP 6487263 B2 JP6487263 B2 JP 6487263B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2002—Optical details, e.g. reflecting or diffusing layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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- G—PHYSICS
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- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/161—Applications in the field of nuclear medicine, e.g. in vivo counting
- G01T1/1611—Applications in the field of nuclear medicine, e.g. in vivo counting using both transmission and emission sources sequentially
- G01T1/1612—Applications in the field of nuclear medicine, e.g. in vivo counting using both transmission and emission sources sequentially with scintillation detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2008—Measuring radiation intensity with scintillation detectors using a combination of different types of scintillation detectors, e.g. phoswich
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20187—Position of the scintillator with respect to the photodiode, e.g. photodiode surrounding the crystal, the crystal surrounding the photodiode, shape or size of the scintillator
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/06—Measuring neutron radiation with scintillation detectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/804—Containers or encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
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Description
Claims (7)
- 受光部、及び前記受光部と電気的に接続されたボンディングパッドを有する光検出パネルと、
前記受光部を覆うように前記光検出パネル上に設けられたシンチレータ層と、
前記シンチレータ層を覆うように前記光検出パネル上に設けられた保護層と、を備え、
前記保護層の外縁部は、
前記シンチレータ層と前記ボンディングパッドとの間の領域において前記光検出パネルに密着する密着部と、
前記密着部から前記光検出パネルの反対側に自立状態で延在する延在部と、を有する、放射線検出器。 - 前記保護層は、
光反射膜と、
前記光反射膜に対して前記シンチレータ層側に配置された第1保護膜と、
前記光反射膜に対して前記シンチレータ層の反対側に配置された第2保護膜と、を有する、請求項1記載の放射線検出器。 - 前記光反射膜の外縁は、前記保護層の外縁よりも内側に位置しており、
前記第1保護膜の外縁及び前記第2保護膜の外縁は、前記保護層の外縁に位置しており、
前記第1保護膜の外縁部と前記第2保護膜の外縁部とは、前記光反射膜の外縁よりも外側において接合されており、前記光反射膜の外縁部を覆っている、請求項2記載の放射線検出器。 - 前記光反射膜は、アルミニウム又は銀からなる金属膜である、請求項2又は3記載の放射線検出器。
- 前記光反射膜は、白色顔料を含む樹脂膜である、請求項2又は3記載の放射線検出器。
- 前記延在部の高さは、80μm〜250μmである、請求項1〜5のいずれか一項記載の放射線検出器。
- 受光部、及び前記受光部と電気的に接続されたボンディングパッドを有する光検出パネルを用意し、前記受光部を覆うように前記光検出パネル上にシンチレータ層を設ける工程と、
前記ボンディングパッドを覆うように前記光検出パネル上にマスキング部材を設ける工程と、
前記シンチレータ層、前記シンチレータ層と前記ボンディングパッドとの間の領域、及び前記マスキング部材を覆うように前記光検出パネル上に保護層を設ける工程と、
前記マスキング部材の前記シンチレータ層側の縁部に沿ってレーザ光を照射することにより、前記マスキング部材上において前記保護層を切断する工程と、
前記マスキング部材を除去する工程と、を含む、放射線検出器の製造方法。
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015085687A JP6487263B2 (ja) | 2015-04-20 | 2015-04-20 | 放射線検出器及びその製造方法 |
| EP16782834.2A EP3287812B1 (en) | 2015-04-20 | 2016-02-01 | Radiation detector and method for producing same |
| KR1020177026043A KR102434183B1 (ko) | 2015-04-20 | 2016-02-01 | 방사선 검출기 및 그 제조 방법 |
| US15/563,641 US10379229B2 (en) | 2015-04-20 | 2016-02-01 | Radiation detector and method for producing same |
| PCT/JP2016/052919 WO2016170812A1 (ja) | 2015-04-20 | 2016-02-01 | 放射線検出器及びその製造方法 |
| CN201680022754.4A CN107533142B (zh) | 2015-04-20 | 2016-02-01 | 放射线检测器及其制造方法 |
| TW105104763A TWI674428B (zh) | 2015-04-20 | 2016-02-18 | 放射線檢測器及其製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015085687A JP6487263B2 (ja) | 2015-04-20 | 2015-04-20 | 放射線検出器及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016205916A JP2016205916A (ja) | 2016-12-08 |
| JP6487263B2 true JP6487263B2 (ja) | 2019-03-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015085687A Active JP6487263B2 (ja) | 2015-04-20 | 2015-04-20 | 放射線検出器及びその製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10379229B2 (ja) |
| EP (1) | EP3287812B1 (ja) |
| JP (1) | JP6487263B2 (ja) |
| KR (1) | KR102434183B1 (ja) |
| CN (1) | CN107533142B (ja) |
| TW (1) | TWI674428B (ja) |
| WO (1) | WO2016170812A1 (ja) |
Families Citing this family (11)
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| JP6487263B2 (ja) * | 2015-04-20 | 2019-03-20 | 浜松ホトニクス株式会社 | 放射線検出器及びその製造方法 |
| KR102119733B1 (ko) * | 2017-05-12 | 2020-06-17 | 주식회사 에이치앤아비즈 | 신틸레이터 패널 |
| CN109659385A (zh) * | 2017-10-10 | 2019-04-19 | 群创光电股份有限公司 | 感测装置 |
| CN110323235A (zh) * | 2018-03-29 | 2019-10-11 | 夏普株式会社 | 摄像面板 |
| JP2019174365A (ja) * | 2018-03-29 | 2019-10-10 | シャープ株式会社 | 撮像パネル |
| JP7240998B2 (ja) * | 2018-11-13 | 2023-03-16 | キヤノン電子管デバイス株式会社 | 放射線検出モジュール、放射線検出器、及び放射線検出モジュールの製造方法 |
| JP7325295B2 (ja) * | 2019-10-24 | 2023-08-14 | 浜松ホトニクス株式会社 | シンチレータパネル、放射線検出器、シンチレータパネルの製造方法、及び、放射線検出器の製造方法 |
| JP7333244B2 (ja) | 2019-10-24 | 2023-08-24 | 浜松ホトニクス株式会社 | 放射線検出器、及び、放射線検出器の製造方法 |
| JP7601553B2 (ja) | 2019-12-25 | 2024-12-17 | 浜松ホトニクス株式会社 | 放射線検出器及び放射線検出器の製造方法 |
| JP7345385B2 (ja) | 2019-12-25 | 2023-09-15 | 浜松ホトニクス株式会社 | 放射線検出器及び放射線検出器の製造方法 |
| CN114639689B (zh) * | 2020-12-15 | 2025-03-18 | 京东方科技集团股份有限公司 | 平板探测器、其制作方法及x射线成像系统 |
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| EP3287812A1 (en) | 2018-02-28 |
| US20180074216A1 (en) | 2018-03-15 |
| EP3287812A4 (en) | 2018-09-26 |
| KR20170138403A (ko) | 2017-12-15 |
| TWI674428B (zh) | 2019-10-11 |
| JP2016205916A (ja) | 2016-12-08 |
| TW201638611A (zh) | 2016-11-01 |
| US10379229B2 (en) | 2019-08-13 |
| CN107533142B (zh) | 2019-09-20 |
| KR102434183B1 (ko) | 2022-08-19 |
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