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WO2014049172A3 - Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaïque - Google Patents

Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaïque Download PDF

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Publication number
WO2014049172A3
WO2014049172A3 PCT/EP2013/070350 EP2013070350W WO2014049172A3 WO 2014049172 A3 WO2014049172 A3 WO 2014049172A3 EP 2013070350 W EP2013070350 W EP 2013070350W WO 2014049172 A3 WO2014049172 A3 WO 2014049172A3
Authority
WO
WIPO (PCT)
Prior art keywords
sulphides
copper oxides
photovoltaic use
mixed bismuth
bismuth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2013/070350
Other languages
English (en)
Other versions
WO2014049172A2 (fr
Inventor
Thierry Le Mercier
Philippe Barboux
Tangui LE BAHERS
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Rhodia Operations SAS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Rhodia Operations SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Rhodia Operations SAS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to EP13776438.7A priority Critical patent/EP2901495A2/fr
Priority to CN201380061780.4A priority patent/CN104813483A/zh
Priority to US14/429,474 priority patent/US20150221794A1/en
Priority to KR1020157010582A priority patent/KR20150065753A/ko
Priority to JP2015533628A priority patent/JP2016500624A/ja
Publication of WO2014049172A2 publication Critical patent/WO2014049172A2/fr
Publication of WO2014049172A3 publication Critical patent/WO2014049172A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G29/00—Compounds of bismuth
    • C01G29/006—Compounds containing bismuth, with or without oxygen or hydrogen, and containing two or more other elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/121—Active materials comprising only selenium or only tellurium
    • H10P14/265—
    • H10P14/3226—
    • H10P14/3434—
    • H10P14/3436—
    • H10P14/3452—
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G29/00—Compounds of bismuth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • H10P14/203—
    • H10P14/22—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Light Receiving Elements (AREA)

Abstract

La présente invention concerne l'utilisation d'un matériau comprenant au moins un composé de formule (1) : BiCu1-zOaSbSecTed (1), où 0≤z≤0,2 0≤a<2 0≤b<2; 0≤c<2 O≤d<2; et a+b+c+d=2; à titre de semi-conducteur de type p, pour fournir un photocourant. L'invention concerne également les dispositifs photovoltaïques (20) mettent en œuvre ces semi-conducteurs (21).
PCT/EP2013/070350 2012-09-28 2013-09-30 Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaïque Ceased WO2014049172A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP13776438.7A EP2901495A2 (fr) 2012-09-28 2013-09-30 Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaïque
CN201380061780.4A CN104813483A (zh) 2012-09-28 2013-09-30 用于光电用途的混合的铋和铜的氧化物以及硫化物
US14/429,474 US20150221794A1 (en) 2012-09-28 2013-09-30 Mixed bismuth and copper oxides and sulphides for photovoltaic use
KR1020157010582A KR20150065753A (ko) 2012-09-28 2013-09-30 광기전 용도의, 비스무쓰, 구리 산화물 및 황화물의 혼합물
JP2015533628A JP2016500624A (ja) 2012-09-28 2013-09-30 光電池用途のための混合酸化および硫化ビスマスおよび銅

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1202589A FR2996355B1 (fr) 2012-09-28 2012-09-28 Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique
FR1202589 2012-09-28

Publications (2)

Publication Number Publication Date
WO2014049172A2 WO2014049172A2 (fr) 2014-04-03
WO2014049172A3 true WO2014049172A3 (fr) 2014-10-02

Family

ID=47878090

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/070350 Ceased WO2014049172A2 (fr) 2012-09-28 2013-09-30 Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaïque

Country Status (7)

Country Link
US (1) US20150221794A1 (fr)
EP (1) EP2901495A2 (fr)
JP (1) JP2016500624A (fr)
KR (1) KR20150065753A (fr)
CN (1) CN104813483A (fr)
FR (1) FR2996355B1 (fr)
WO (1) WO2014049172A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3019539B1 (fr) * 2014-04-04 2016-04-29 Rhodia Operations Oxydes et sulfures mixtes de bismuth et cuivre pour application photovoltaique
FR3019540A1 (fr) * 2014-04-04 2015-10-09 Rhodia Operations Oxydes et sulfures mixtes de bismuth et argent pour application photovoltaique
CN106744726A (zh) * 2017-01-05 2017-05-31 上海应用技术大学 一种具有层状结构BiOCuSe纳米片的制备方法
CN106745242A (zh) * 2017-01-05 2017-05-31 上海应用技术大学 一种采用浓碱水热法制备BiOCuS纳米片的方法
CN110763850B (zh) * 2019-11-08 2021-05-18 江南大学 一种非标记均相阴极光电化学检测17β-雌二醇的方法
CN114573026B (zh) * 2022-03-28 2024-03-22 金陵科技学院 一种铜铋硫纳米颗粒的制备方法
CN114824068B (zh) * 2022-03-28 2025-09-05 国科大杭州高等研究院 一种基于二维层状铜基硫族化合物的忆阻器及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080110538A (ko) * 2007-06-14 2008-12-18 주식회사 엘지화학 신규한 화합물 반도체 물질 및 그 제조 방법과, 이를이용한 태양 전지
WO2010024500A1 (fr) * 2008-08-29 2010-03-04 Lg Chem, Ltd. Nouveau composé semi-conducteur et son procédé de fabrication, pile solaire et élément de conversion thermoélectrique l’utilisant

Family Cites Families (4)

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DE19955788A1 (de) * 1999-11-19 2001-05-23 Basf Ag Thermoelektrisch aktive Materialien und diese enthaltende Generatoren
EP1540741B1 (fr) * 2002-09-05 2014-10-29 Nanosys, Inc. Compositions et dispositifs photovoltaiques a base de nanostructures et de nanocomposites
JP5344731B2 (ja) * 2006-03-10 2013-11-20 独立行政法人産業技術総合研究所 可視光応答性の半導体素子および光電極、並びにそれを用いた光エネルギー変換システム
US20120018828A1 (en) * 2010-07-23 2012-01-26 Stion Corporation Sodium Sputtering Doping Method for Large Scale CIGS Based Thin Film Photovoltaic Materials

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080110538A (ko) * 2007-06-14 2008-12-18 주식회사 엘지화학 신규한 화합물 반도체 물질 및 그 제조 방법과, 이를이용한 태양 전지
WO2010024500A1 (fr) * 2008-08-29 2010-03-04 Lg Chem, Ltd. Nouveau composé semi-conducteur et son procédé de fabrication, pile solaire et élément de conversion thermoélectrique l’utilisant

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
A.P. RICHARD ET AL: "Synthesis, structure, and optical properties of BiCuOCh (Ch=S, Se, and Te)", JOURNAL OF SOLID STATE CHEMISTRY, vol. 187, 4 December 2011 (2011-12-04), pages 15 - 19, XP055073206, ISSN: 0022-4596, DOI: 10.1016/j.jssc.2011.11.013 *
KENJI YAMADA ET AL: "Effect of p-type semiconductor electrode on photovoltaic properties in n/p tandem-type dye-sensitized solar cell", MOLECULAR CRYSTALS AND LIQUID CRYSTALS; PROCEEDINGS OF THE KJF INTERNATIONAL CONFERENCE ON ORGANIC MATERIALS FOR ELECTRONICS AND PHOTONICS (KJF-ICOMEP 2011) PART I, TAYLOR & FRANCIS, UK, vol. 566, no. 1, 12 September 2012 (2012-09-12), pages 193 - 201, XP008163817, ISSN: 1542-1406, [retrieved on 20120912], DOI: 10.1080/15421406.2012.701979 *
WILLIAM C SHEETS ET AL: "Facile Synthesis of BiCuOS by Hydrothermal Methods", INORGANIC CHEMISTRY, vol. 46, no. 25, 14 November 2007 (2007-11-14), pages 10741 - 10748, XP007922796, ISSN: 0020-1669, [retrieved on 20071114], DOI: 10.1021/IC7014622 *

Also Published As

Publication number Publication date
FR2996355A1 (fr) 2014-04-04
EP2901495A2 (fr) 2015-08-05
FR2996355B1 (fr) 2016-04-29
WO2014049172A2 (fr) 2014-04-03
KR20150065753A (ko) 2015-06-15
US20150221794A1 (en) 2015-08-06
JP2016500624A (ja) 2016-01-14
CN104813483A (zh) 2015-07-29

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