WO2014041743A1

WO2014041743A1 - Display unit, method of manufacturing the same, and electronic apparatus

Info

Publication number: WO2014041743A1
Application number: PCT/JP2013/004867
Authority: WO
Inventors: Tomoyoshi Ichikawa; Koichi Nagasawa; Tatsuya Ichikawa; Tsutomu Shimayama; Kouhei SUGIYAMA; Yoshihisa Miyabayashi; Masayuki Sakaguchi; Kenichi Harada; Takashi Kanno; Shinichi Tanaka
Original assignee: Sony Corp
Current assignee: Sony Corp
Priority date: 2012-09-11
Filing date: 2013-08-15
Publication date: 2014-03-20
Anticipated expiration: 2015-03-11
Also published as: TW201411833A; JP2014056666A

Abstract

A display unit includes a display device including a light-emitting layer between a first electrode and a second electrode, and including a resonator structure resonating light between a plurality of interfaces, the light being generated in the light-emitting layer. The display device includes a multilayer film in which high-refractive-index films and low-refractive-index films are alternately laminated, the multilayer film being provided on an outer side of the second electrode, and the resonator structure has a first interface on the first electrode side, a second interface on the second electrode side, and one or a plurality of additional interfaces, the one or the plurality of additional interfaces being provided between the high-refractive-index film and the low-refractive-index film of the multilayer film.

Description

DISPLAY UNIT, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS

The disclosure relates to a display unit using an organic electroluminescence (EL) device, a method of manufacturing the same, and an electronic apparatus.

An organic EL device has an organic layer that includes a light-emitting layer between a first electrode and a second electrode. In the organic EL device, it is possible to increase light-emitting efficiency in a front direction, by providing a first interface on the first electrode side and a second interface on the second electrode side, and introducing a resonator structure that resonates light between the first interface and the second interface. However, when a light-emission surface is viewed diagonally, a wavelength of light shifts significantly, and viewing-angle dependence of light-emitting properties increases.

In order to avoid this disadvantage, Japanese Unexamined Patent Application Publication No. 2011-159431, for example, has proposed that a transparent layer be provided between the second electrode and the organic layer, and that a third interface be introduced between this transparent layer and the organic layer.

JP-A-2011-159431

Summary

In JP-A-2011-159431, it may be possible to reduce the viewing-angle dependence by adjusting an optical distance between the first interface and the third interface, in addition to adjusting an optical distance between the first interface and the second interface. However, in the configuration in which the transparent layer is provided between the second electrode and the organic layer as disclosed in JP-A-2011-159431, there has been a limit to a further increase in the number of interfaces, and there has been room for a further improvement.

It is desirable to provide a display unit capable of enhancing flexibility in design and making it easier to reduce viewing-angle dependence, a method of manufacturing the display unit, and an electronic apparatus.

According to an embodiment of the disclosure, there is provided a display unit including: a display device including a light-emitting layer between a first electrode and a second electrode, and including a resonator structure resonating light between a plurality of interfaces, the light being generated in the light-emitting layer. The display device includes a multilayer film in which high-refractive-index films and low-refractive-index films are alternately laminated, the multilayer film being provided on an outer side of the second electrode, and the resonator structure has a first interface on the first electrode side, a second interface on the second electrode side, and one or a plurality of additional interfaces, the one or the plurality of additional interfaces being provided between the high-refractive-index film and the low-refractive-index film of the multilayer film.

In the display unit according to the above-described embodiment of the disclosure, the multilayer film in which the high-refractive-index films and the low-refractive-index films are alternately laminated is provided on the outer side of the second electrode. Further, one or a plurality of additional interfaces are provided between the high-refractive-index film and the low-refractive-index film of the multilayer film. Therefore, flexibility in design is enhanced, and when two or more monochromatic rays (e.g. R, G, and B) are combined to be emitted, a balance of these monochromatic rays is readily adjusted. Therefore, relative changes due to viewing angles of tristimulus values X, Y, and Z of the combined light are made coherent, and a color shift is suppressed. In particular, a color shift of white that is easily perceived is suppressed.

According to an embodiment of the disclosure, there is provided a method of manufacturing a display unit that includes a display device, the display device including a light-emitting layer between a first electrode and a second electrode, and also including a resonator structure resonating light between a plurality of interfaces, the light being generated in the light-emitting layer. The method includes: forming the first electrode, the light-emitting layer, and the second electrode, and also forming a first interface of the resonator structure on the first electrode side and a second interface of the resonator structure on the second electrode side; and forming a multilayer film in which high-refractive-index films and low-refractive-index films are alternately laminated, the multilayer film being provided on an outer side of the second electrode, and also forming one or a plurality of additional interfaces of the resonator structure, the one or the plurality of additional interfaces being formed between the high-refractive-index film and the low-refractive-index film of the multilayer film.

According to an embodiment of the disclosure, there is provided an electronic apparatus including a display unit. The display unit includes a display device including a light-emitting layer between a first electrode and a second electrode, and also including a resonator structure resonating light between a plurality of interfaces, the light being generated in the light-emitting layer. The display device includes a multilayer film in which high-refractive-index films and low-refractive-index films are alternately laminated, the multilayer film being provided on an outer side of the second electrode, and the resonator structure has a first interface on the first electrode side, a second interface on the second electrode side, and one or a plurality of additional interfaces, the one or the plurality of additional interfaces being provided between the high-refractive-index film and the low-refractive-index film of the multilayer film.

In the electronic apparatus according to the above-described embodiment of the disclosure, an image in which viewing-angle dependence is reduced is displayed by the display unit according to the above-described embodiment of the disclosure.

According to the display unit in the above-described embodiment of the disclosure, or the electronic apparatus in the above-described embodiment of the disclosure, the multilayer film in which the high-refractive-index films and the low-refractive-index films are alternately laminated is provided on the outer side of the second electrode. Further, one or a plurality of additional interfaces are provided between the high-refractive-index film and the low-refractive-index film of the multilayer film. Therefore, flexibility in design is allowed to be enhanced, and viewing-angle dependence is allowed to be reduced more easily.

According to the method of manufacturing the display unit in the above-described embodiment of the disclosure, the multilayer film in which the high-refractive-index films and the low-refractive-index films are alternately laminated is formed on the outer side of the second electrode. Further, one or a plurality of additional interfaces are formed between the high-refractive-index film and the low-refractive-index film of the multilayer film. Therefore, the display unit according to the above-described embodiment of the disclosure is allowed to be readily manufactured.

It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are provided to provide further explanation of the technology as claimed.

The accompanying drawings are included to provide a further understanding of the technology, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments and, together with the specification, serve to explain the principles of the technology.
Fig. 1 is a diagram illustrating a configuration of a display unit according to a first embodiment of the disclosure. Fig. 2 is a diagram illustrating an example of a pixel circuit illustrated in Fig. 1. Fig. 3 is a cross-sectional diagram illustrating a configuration of a display region illustrated in Fig. 1. Fig. 4 is a cross-sectional diagram illustrating a configuration of a multilayer film illustrated in Fig. 3. Fig. 5 is a cross-sectional diagram illustrating a configuration of a multilayer film, in a display unit according to a modification 1. Fig. 6 is a cross-sectional diagram illustrating a configuration of a multilayer film, in a display unit according to a modification 2. Fig. 7 is a cross-sectional diagram illustrating a configuration of a multilayer film, in a display unit according to a second embodiment of the disclosure. Fig. 8 is a cross-sectional diagram illustrating a configuration of a multilayer film, in a display unit according to a third embodiment of the disclosure. Fig. 9 is a cross-sectional diagram illustrating a configuration of a display region, in a display unit according to a fourth embodiment of the disclosure. Fig. 10 is a cross-sectional diagram illustrating a configuration of a display region, in a display unit according to a fifth embodiment of the disclosure. Fig. 11 is a cross-sectional diagram illustrating a configuration of a display region, in a display unit according to a sixth embodiment of the disclosure. Fig. 12 is a cross-sectional diagram illustrating a configuration of a display region, in a display unit according to a modification 3. Fig. 13 is a cross-sectional diagram illustrating a configuration of a multilayer film according to Example 1 of the disclosure. Fig. 14 is a cross-sectional diagram illustrating a configuration of a protective film according to a comparative example 1 of the disclosure. Fig. 15 is a diagram illustrating results of examining chromaticity changes. Fig. 16 is a cross-sectional diagram illustrating a configuration of a multilayer film according to Example 2 of the disclosure. Fig. 17 is a diagram illustrating results of examining pixel erosion incidences. Fig. 18 is a plan view illustrating a schematic configuration of a module including the display unit of any of the above-described embodiments. Fig. 19 is a perspective view illustrating an appearance of an application example 1 of the display unit in any of the above-described embodiments, when viewed from front. Fig. 20 is a perspective view illustrating an appearance of the application example 1, when viewed from back. Fig. 21 is a perspective view illustrating an appearance of an application example 2, when viewed from front. Fig. 22 is a perspective view illustrating an appearance of the application example 2, when viewed from back. Fig. 23 is a perspective view illustrating an appearance of an application example 3. Fig. 24 is a perspective view illustrating an appearance of an application example 4, when viewed from front. Fig. 25 is a perspective view illustrating an appearance of the application example 4, when viewed from back. Fig. 26 is a perspective view illustrating an appearance of an application example 5. Fig. 27 is a perspective view illustrating an appearance of an application example 6. Fig. 28 is a front view illustrating an appearance of an application example 7 in a closed state. Fig. 29 is a front view illustrating an appearance of the application example 7 in an open state.

Embodiments of the disclosure will be described in detail with reference to the drawings. It is to be noted that the description will be provided in the following order.
1. First embodiment (RGB top emission; an example of having a multilayer film in which high-refractive-index films and low-refractive-index films are alternately laminated to be four layers)
2. Modification 1 (an example of having a multilayer film in which high-refractive-index films and low-refractive-index films are alternately laminated to be an even-number of layers)
3. Modification 2 (an example of having a multilayer film in which high-refractive-index films and low-refractive-index films are alternately laminated to be an odd-number of layers)
4. Second embodiment (an example of having a multilayer film in which high-refractive-index films and low-refractive-index films are alternately laminated to be three layers, and a refractive index of a third layer is gradually reduced)
5. Third embodiment (an example of having a multilayer film in which high-refractive-index films and low-refractive-index films are alternately laminated to be three layers, a third layer has a laminated structure of a plurality of layers, and refractive indexes of the respective layers are reduced stepwise)
6. Fourth embodiment (white top emission; an example of monochrome display)
7. Fifth embodiment (white top emission; an example of color display)
8. Sixth embodiment (RGB bottom emission; an example of separately providing a multilayer film and a planarizing film on a TFT)
9. Modification 3 (RGB bottom emission; an example in which a fourth layer of a multilayer film serves as a planarizing film on a TFT)
10. Examples
11. Application examples

(First Embodiment)
Fig. 1 illustrates a configuration of a display unit according to a first embodiment of the disclosure. This display unit is an organic EL color display unit used as a monitor or a television receiver, and may have, for example, a display region 110A in which pixels PXLC formed of

organic EL devices

10R, 10G, and 10B described later each serving as a display device are arranged in a matrix. Around the display region 110A, a horizontal selector (HSEL) 121 that is a signal section, a write scanner (WSCN) 131 that is a scanner section, and a power supply scanner (DSCN) 132 are disposed.

In the display region 110A, signal lines DTL 101 to 10n are arranged in a column direction, and scanning lines WSL 101 to 10m as well as power source lines DSL 101 to 10m are arranged in a row direction. At an intersection between each of the signal lines DTL and each of the scanning lines WSL, a pixel circuit 140 including any one (a subpixel) of the

organic EL devices

10R, 10G, and 10B is provided. Each of the signal lines DTL is connected to the horizontal selector 121, and an image signal is supplied from the horizontal selector 121 to the signal line DTL. Each of the scanning lines WSL is connected to the write scanner 131. Each of the power source lines DSL is connected to the power supply scanner 132.

Fig. 2 illustrates an example of the pixel circuit 140. The pixel circuit 140 is an active drive circuit including a sampling transistor 3A, a driving transistor 3B, a retention capacitor 3C, and a light-emitting device 3D formed of any one of the

organic EL devices

10R, 10G, and 10B. In the sampling transistor 3A, a gate thereof is connected to the scanning line WSL 101 corresponding thereto, one of a source and a drain thereof is connected to the corresponding signal line DTL 101, and the other is connected to a gate "g" of the driving transistor 3B. In the driving transistor 3B, a drain "d" thereof is connected to the power source line DSL101 corresponding thereto, and a source "s" thereof is connected to an anode of the light-emitting device 3D. A cathode of the light-emitting device 3D is connected to ground wiring 3H. It is to be noted that the ground wiring 3H is wired commonly for all the pixels PXLC. The retention capacitor 3C is connected between the source "s" and the gate "g" of the driving transistor 3B.

The sampling transistor 3A conducts in response to a control signal supplied from the scanning line WSL 101, samples a signal potential of an image signal supplied from the signal line DTL 101, and retains the signal potential at the retention capacitor 3C. The driving transistor 3B receives supply of a current from the power source line DSL 101 at a power supply electric potential, and supplies the light-emitting device 3D with a driving current according to the signal potential retained at the retention capacitor 3C. The light-emitting device 3D is caused to emit light at an intensity corresponding to the signal potential of the image signal, by the supplied driving current.

Fig. 3 illustrates a cross-sectional configuration of the display region 110A illustrated in Fig. 1. In the display region 110A, the

organic EL devices

10R, 10B, and 10G generating rays of single colors different from each other in a visible light region are sequentially provided as a plurality of display devices on a substrate 10. Specifically, on the substrate 10, the organic EL device 10R generating red light LR, the organic EL device 10B generating blue light LB, and the organic EL device 10G generating green light LG are sequentially provided. It is to be noted that, the substrate 10 is provided with the pixel circuit 140 described above, and the pixel circuit 140 is covered by a planarizing film (not illustrated). The

organic EL devices

10R, 10G, and 10B are provided on this planarizing film.

The

organic EL devices

10R, 10G, and 10B each have an organic layer 13 that includes a light-emitting layer provided between a lower electrode 11 and an upper electrode 12. The lower electrode 11, the organic layer 13, and the upper electrode 12 are laminated in this order from the substrate 10 side.

Here, in the present embodiment, the lower electrode 11 corresponds to a specific but not limitative example of "first electrode" in the disclosure. The upper electrode 12 corresponds to a specific but not limitative example of "second electrode" in the disclosure.

The substrate 10 may be configured of, for example, a transparent glass substrate, or a semiconductor substrate such as a silicon substrate. In addition, the substrate 10 may be a flexible substrate made of a plastic material.

For example, the lower electrode (anode) 11 may have a thickness of about 100 nanometers to about 300 nanometers, and be configured of, for example, a light-reflecting material such as aluminum (Al), aluminum alloy, platinum (Pt), gold (Au), chromium (Cr), and tungsten (W). The lower electrode 11 may extract light generated in the light-emitting layer, from the upper electrode 12 side (top emission). Further, the lower electrode 11 may be a transparent electrode made of a material such as ITO (Indium Tin Oxide). In this case, it is desirable to provide a reflecting layer (not illustrated), between the lower electrode 11 and the substrate 10, to form a first interface P1 of a resonator structure which will be described later. The reflective layer may be made of a light-reflecting material such as Pt, Au, Cr, and W.

The lower electrode 11 is formed separately for each of the

organic EL devices

10R, 10G, and 10B. In addition, the lower electrodes 11 may be electrically separated from each other by a pixel separation insulating film (not illustrated), as necessary. For example, the pixel separation insulating film may have a thickness of about 2 micrometers, and be configured of an organic photosensitive insulating material such as polyimide, or an inorganic insulating film such as a silicon oxide film and a silicon nitride film.

For example, the upper electrode (cathode) 12 may have a thickness in a range of about 3 nanometers to about 15 nanometers, and be configured of a metal film made of an element such as magnesium (Mg) and silver (Ag), or any of alloys thereof.

It is to be noted that the upper electrode 12 is separately provided for each of the

organic EL devices

10R, 10G, and 10B in Fig. 3, but may be provided as a common electrode for the

organic EL devices

10R, 10G, and 10B.

The organic layer 13 may be, for example, a layer in which a hole injection layer as well as a hole transport layer 13A, a light-emitting layer 13B, and an electron transport layer as well as an electron injection layer 13C are laminated in this order from the lower electrode 11 side.

The hole injection layer as well as the hole transport layer 13A are provided to increase hole injection efficiency for the light-emitting layer 13B. The hole injection layer may be configured of, for example, a material such as hexaazatriphenylene (HAT). The hole transport layer may be configured of, for example, alpha-NPD [N,N'-di(1-naphthyl)-N,N'-diphenyl- [1,1'-biphenyl]-4,4'-diamine].

The light-emitting layer 13B generates light when recombination between a hole and an electron is caused by application of an electric field. The hole is injected from the lower electrode 11 through the hole injection layer as well as the hole transport layer 13A, and the electron is injected from the upper electrode 12 through the electron transport layer as well as the electron injection layer 13C. The light-emitting layer 13B may be configured of, for example, a luminescent material made of a host material and a dopant material. Specifically, the light-emitting layer 13B of the organic EL device 10B for blue may be, for example, a layer in which a film serving as a host material is doped with a diaminochrysene derivative serving as a dopant material. The film may have a thickness of about 30 nanometers, and be made of ADN (9,10-di(2-naphthyl)anthracene). The diaminochrysene derivative may be of 5% in a relative film thickness ratio. The light-emitting layer 13B of the organic EL device 10G for green may be configured of, for example, Alq₃ (tris(8-hydroxyquinoline)aluminium). The light-emitting layer 13B of the organic EL device 10R for red may be, for example, a layer in which rubrene serving as a host material is doped with a pyrromethene boron complex serving as a dopant material.

The electron transport layer as well as the electron injection layer 13C are provided to increase electron injection efficiency for the light-emitting layer 13B. The electron transport layer may be configured of, for example, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline). The electron injection layer may be configured of, for example, lithium fluoride (LiF).

In terms of thickness of each layer of the organic layer 13, preferably, for example, the hole injection layer may be in a range of about 1 nanometer to about 20 nanometers, the hole transport layer may be in a range of about 15 nanometers to about 100 nanometers, the light-emitting layer may be in a range of about 5 nanometers to about 50 nanometers, and the electron transport layer as well as the electron injection layer may be in a range of about 15 nanometers to about 200 nanometers. Further, the thickness of each of the organic layer 13 and the layers thereof is set at a value so that an optical film thickness thereof enables operation of the resonator structure described later.

It is to be noted that the organic layer 13 is separately provided for each of the

organic EL devices

10R, 10G, and 10B in Fig. 3, but may be provided as a common layer for the

organic EL devices

10R, 10G, and 10B.

Further, each of the

organic EL devices

10R, 10G, and 10B has a resonator structure MC. The resonator structure MC resonates the light generated in the light-emitting layer 13B, by using an end face on the light-emitting layer 13B side of the lower electrode 11 as a first interface P1, an end face on the light-emitting layer 13B side of the upper electrode 12 as a second interface P2, and the organic layer 13 as a resonance section. Thus having the resonator structure MC makes it possible to decrease a half-value width of a spectrum of extracted light and increase a peak intensity, because the light generated in the light-emitting layer 13B causes multiple interaction, thereby acting as a kind of narrow-band filter. In other words, it is possible to increase luminous radiation strength in the front direction, thereby improving color purity of emitted light. Moreover, external light entering from the upper electrode 12 side is also allowed to be reduced by the multiple interaction. This makes it possible to significantly reduce reflectance of the external light in the

organic EL devices

10R, 10G, and 10B, by using a color filter (not illustrated), or the combination of a phase difference plate and a polarizing plate (neither is illustrated).

Preferably, for example, an optical distance L1 between the first interface P1 and the second interface P2 may satisfy Math. 1.

In each of the

organic EL devices

10R, 10G, and 10B each having the resonator structure MC as described above, viewing-angle dependence of brightness and chromaticity, namely, a change in brightness and chromaticity between a case of viewing from the front direction and a case of viewing from an oblique direction, tends to increase, as the order "m" becomes larger. When an organic EL display is assumed to be used for a monitor, a television receiver, or the like, a decline in brightness and a change in chromaticity depending on the viewing angle may be preferably small.

When only viewing angle properties are taken into consideration, a condition in which m = 0 is ideal. Under this condition, however, the thickness of the organic layer 13 is small and thus, light-emitting properties may be affected, and a short circuit between the lower electrode 11 and the upper electrode 12 may occur. Therefore, by using, for example, the condition of m = 1, it may be possible to avoid an increase in viewing-angle dependence of brightness and chromaticity, to suppress a decline in light-emitting properties and occurrence of a short circuit, and to achieve compatibility between productivity enhancement and excellent viewing- angle properties.

Further, in each of the

organic EL devices

10R, 10G, and 10B, a multilayer film 20 in which high-refractive-index films and low-refractive-index films are alternately laminated is provided on an outer side of the upper electrode 12. Between the high-refractive-index film and the low-refractive-index film of the multilayer film 20, one or a plurality of additional interfaces are provided. Thus, in this display unit, flexibility in design of the resonator structure MC is allowed to be increased, and making it easier to reduce viewing-angle dependence.

Specifically, as illustrated in Fig. 4, the multilayer film 20 includes a first layer 21 of a high-refractive-index film, a second layer 22 of a low-refractive-index film, a third layer 23 of a high-refractive-index film, and a fourth layer 24 of a low-refractive-index film, in this order from the upper electrode 12 side. The resonator structure MC includes a third interface P3 between the first layer 21 and the second layer 22 as an additional interface, and includes a fourth interface P4 between the second layer 22 and the third layer 23 as an additional interface.

The third interface P3 and the fourth interface P4 that are additional interfaces are provided to adjust, when monochromatic rays of R, G, and B are combined to be emitted by the

organic EL devices

10R, 10G, and 10B, a balance of these monochromatic rays.

In other words, when light is emitted by combining R, G, and B, it is difficult to suppress a color shift unless relative changes due to viewing angles of tristimulus values X, Y, and Z of the combined light are coherent. This is a disadvantage, in particular, in white that is readily perceived. In order to address this, in the present embodiment, the multilayer film 20 is provided on the upper electrode 12 for the purpose of fine-tuning a balance of R, G, and B. In other words, in the multilayer film 20, flexibility in design is increased by forming, besides the first interface P1 and the second interface P2, the third interface P3 and the fourth interface P4 as additional interfaces, so that adjustment of the balance of R, G, and B is made easy. It is to be noted that the balance of R, G, and B may be adjusted by performing adjustment of the thickness and/or selection of the material of the organic layer 13, adjustment of the thickness of each layer of the multilayer film 20, and/or the like.

The multilayer film 20 as described above also has a function as a passivation film protecting the upper electrode 12 and the organic layer 13 that are easily affected by erosion or deterioration due to water and the like. The multilayer film 20 is configured of an inorganic material, an organic material, or a combination thereof. Examples of the inorganic material may include silicon oxide (SiOx), silicon nitride (SiNx), and combination thereof. Examples of the organic material may include resin films based on polyimide, epoxy, and acrylic.

The multilayer film 20 may be preferably configured of a film having silicon (Si) and nitrogen (N) as main components. The film having silicon (Si) and nitrogen (N) as main components may be formed as a film that is closely packed and low in water content, even when being formed by low-temperature CVD (Chemical Vapor Deposition). Therefore, in particular, in a case of top emission, it is possible to avoid heat damage to the organic layer 13 due to formation of the multilayer film 20 by high-temperature CVD after formation of the organic layer 13. It is also possible to increase passivation performance of the multilayer film 20, and to enhance high-temperature storage characteristics and reliability.

Examples of the film having silicon (Si) and nitrogen (N) as main components may include SiNx, SiON, and SiCN. Above all, SiNx is preferable. As for a SiNx film, it is possible to readily change a refractive index by adjusting CVD conditions during film formation. Therefore, forming the same SiNx films varying only in refractive index as all the first layer 21 to the fourth layer 24 makes it possible to simplify a configuration, and to suppress equipment cost for a manufacturing process.

Further, in the purpose of making the relative changes due to the viewing angles of the tristimulus values X, Y, and Z of the combined light (white) coherent as describe above, a large refractive index is not necessary. Therefore, a refractive index difference between a high refractive index SiN and a low refractive index SiN is adjustable, and there is flexibility in material selection. It is not necessary to use a loose and high-water-content material such as SiO to increase the refractive index difference at an interface, and thus, it is possible to suppress pixel erosion.

A specific configuration of each of the first layer 21 to the fourth layer 24 of the multilayer film 20 will be described below.

The first layer 21 is a layer closest to the upper electrode 12, among the layers of the multilayer film 20, and provided in direct contact with the upper electrode 12. The first layer 21 is a film provided to prevent unconverted gas from an upper-layer film (in particular, the second layer 22 or the fourth layer 24) from entering the upper electrode 12 and the organic layer 13. Therefore, the first layer 21 is desired to have high barrier performance. To this end, when a peak intensity belonging to N-H stretching vibration in the neighborhood of 3350 cm^-1 in a Fourier transform infrared spectroscopy spectrum is assumed to be "A", and a peak intensity belonging to Si-H stretching vibration in the neighborhood of 2160 cm^-1 is assumed to be "B", a B/A ratio of the first layer 21 may be preferably larger than a B/A ratio of the fourth layer 24.

The first layer 21 may be configured of, for example, a film having silicon (Si) and nitrogen (N) as main components, such as a SiNx film. In addition, the first layer 21 is provided as a film that is closely packed (highly dense) and has a high silicon component ratio to increase the barrier performance for the reason described above, and therefore, the refractive index thereof is relatively the highest among the layers of the multilayer film 20.

Further, the first layer 21 has an optical adjustment function of forming the third interface P3 and thus, the first layer 21 may be preferably not too thick. This is because when the first layer 21 is too thick, the third interface P3 ceases to exist. Preferably, the first layer 21 may have a thickness of, for example, about 10 nanometers or more and about 500 nanometers or less.

The second layer 22 is a low-refractive-index film provided to form the third interface P3 between the first layer 21 and the second layer 22. In other words, when a refractive index of the first layer 21 is assumed to be "n1" and a refractive index of the second layer 22 is assumed to be "n2", a relation of n1 > n2 holds.

The second layer 22 may be configured of, for example, a film having silicon (Si) and nitrogen (N) as main components, such as a SiNx film. The second layer 22 is provided as a film that is looser (lower in density) than the first layer 21, by adjustment of film formation conditions. Therefore, the second layer 22 has a refractive index lower than that of the first layer 21. It is to be noted that the second layer 22 is a loose film and thus contains a large amount of unconverted gas. However, the unconverted gas from the second layer 22 is prevented from entering the upper electrode 12 or the organic layer 13, since the first layer 21 having a barrier function is provided between the second layer 22 and the upper electrode 12.

In addition, the second layer 22 has an optical adjustment function of forming the third interface P3 and the fourth interface P4 and thus, the second layer 22 being not too thick may be preferable. This is because when the second layer 22 is too thick, the third interface P3 and the fourth interface P4 cease to exist. Preferably, the second layer 22 may have a thickness of, for example, about 10 nanometers or more and about 500 nanometers or less.

The third layer 23 is a high-refractive-index film provided to form the fourth interface P4 between the second layer 22 and the third layer 23. In other words, when a refractive index of the second layer 22 is assumed to be "n2" and a refractive index of the third layer 23 is assumed to be "n3", a relation of n2 < n3 holds.

The third layer 23 may be configured of, for example, a film having silicon (Si) and nitrogen (N) as main components, such as a SiNx film. In addition, the third layer 23 is provided as a film that is closely packed and has a high silicon component ratio by adjustment of film formation conditions, as with the first layer 21. Therefore, the third layer 23 has a high refractive index and also has a function of complementing the barrier property of the first layer 21.

Further, the third layer 23 has an optical adjustment function of forming the fourth interface P4 and thus, the third layer 23 being not too thick may be preferable. This is because when the third layer 23 is too thick, the fourth interface P4 ceases to exist. Preferably, the third layer 23 may have a thickness of, for example, about 10 nanometers or more and about 500 nanometers or less.

Furthermore, the refractive index n3 of the third layer 23 and the refractive index n1 of and the first layer 21 may preferably satisfy n1 > n3. This makes it possible to increase extraction efficiency, by allowing reflection at the fourth interface P4 to be smaller than reflection at the third interface P3.

The fourth layer 24 is a layer farthest from the upper electrode 12 among the layers of the multilayer film 20. The fourth layer 24 is a film provided to prevent entrance of water and the like from a gap, by covering a foreign substance or a projection on a lower-layer film (the organic layer 13, the upper electrode 12, and/or the like) when such a foreign substance or projection is present.

The fourth layer 24 may be configured of, for example, a film having silicon (Si) and nitrogen (N) as main components, such as a SiNx film. The fourth layer 24 is provided as a film that is looser than the third layer 23 by adjustment of film formation conditions, and thus has a refractive index lower than that of the third layer 23. It is to be noted that the fourth layer 24 is a loose film and thus contains a large amount of unconverted gas. However, unconverted gas from the fourth layer 24 is prevented from entering the upper electrode 12 or the organic layer 13, since the first layer 21 and the third layer 23 each having a barrier function are provided between the fourth layer 24 and the upper electrode 12. A refractive index n4 of the fourth layer 24 and the refractive index n2 of the second layer 22 are about the same.

The fourth layer 24 may preferably have a thickness of about 1 micrometer or more, and more preferably about 1 micrometer or more and about 10 micrometers or less. This is because when this thickness is less than 1 micrometer, a foreign substance or a projection on a lower-layer film is unlikely to be covered with reliability. In addition, since the fourth layer 24 is a loose film as described above, a film formation rate is allowed to be raised, and the thickness is allowed to be easily increased to 1 micrometer or more.

The fourth layer 24 may preferably have, for example, an extinction coefficient of 0.01 or less. This is because, in a case in which the thickness of the fourth layer 24 is 1 micrometer or more which is thick, when absorption of light of the fourth layer 24 is large, light emitted from the organic layer 13 may be absorbed, and extraction efficiency may be reduced.

It is to be noted that the first layer 21 to the fourth layer 24 of the multilayer film 20 are provided for each of the

organic EL devices

10R, 10G, and 10B in Fig. 3, but may be each provided as a common layer for the

organic EL devices

10R, 10G, and 10B.

Further, for example, a counter substrate (not illustrated) made of glass or the like may be adhered onto the entire surface of the multilayer film 20, with a bonding layer (not illustrated) made of UV-curable resin or thermoset resin interposed therebetween. The counter substrate is provided with, as necessary, a light-shielding film serving as a color filter or a black matrix. Between the multilayer film 20 and the counter substrate, a lens sheet (not illustrated) may be attached. Examples of a material of the bonding layer may include epoxy-based organic materials and acrylic-based organic materials.

This display unit may be manufactured as follows, for example.

First, the pixel circuit 140 is formed on the substrate 10 made of the material described above, and the surface of the substrate 10 is planarized by a planarizing film (not illustrated). Next, on the surface of the substrate 10 covered by the planarizing film, a lower electrode material film (not illustrated) made of an Al alloy, for example, is formed by sputtering, for example, to have a thickness of about 100 nanometers, for example. This lower electrode material film is formed into a predetermined shape by using, for example, photolithography and etching, to form the lower electrode 11. Subsequently, an electrode separation insulating film (not illustrated) is formed as necessary, between the lower electrodes 11.

Afterwards, on the lower electrode 11, the organic layer 13 is formed by sequentially depositing the hole injection layer as well as the hole transport layer 13A, the light-emitting layer 13B, and the electron transport layer as well as the electron injection layer 13C having the respective thicknesses and being made of the respective materials described above, by, for example, vacuum deposition. The organic layer 13 may be formed separately for each color of red, green, and blue by vapor deposition through use of a mask. In addition, the organic layer 13 has a function of serving as the resonance section that resonates light generated in the light-emitting layer 13B, in the resonator structure MC. Therefore, extraction efficiency and viewing angle properties are allowed to be increased, through adjustment of the thickness of the resonance section in the resonator structure MC, by adjusting the thicknesses of the organic layers 13 of red, green, and blue to each other.

After the organic layer 13 is formed, the upper electrode 12 having the above-described thickness and being made of the above-described material is formed on the organic layer 13 by vacuum deposition, for example. As a result, the first interface P1 of the resonator structure MC is formed at the end face on the light-emitting layer 13B side of the lower electrode 11, and the second interface P2 of the resonator structure MC is formed at the end face on the light-emitting layer 13B side of the upper electrode 12.

After the upper electrode 12 is formed, the first layer 21 to the fourth layer 24 each having the above-described thickness and being made of the above-described material are formed on the upper electrode 12, to form the multilayer film 20. Examples of a method of forming the multilayer film 20 may include plasma CVD in a case of an inorganic material, and coating in a case of an organic material. The plasma CVD provides excellent coatability (coverage), and enables high-speed film formation, and thus is advantageous in terms of improvement in productivity. The coating provides excellent surface smoothness.

When the multilayer film 20 is configured of a SiNx film, for example, the multilayer film 20 may be preferably formed by low-temperature CVD using gas that includes carrier gas such as silane gas, ammonia gas, and nitrogen as a raw material. At the same time, refractive indexes may be preferably varied between the high-refractive-index films (the first layer 21 and the third layer 23) and the low-refractive-index films (the second layer 22 and the fourth layer 24) by adjusting CVD conditions. In this case, examples of ranges of the CVD conditions may include a silane gas flow rate of about 0.1 to about 5.0 (SLM), an ammonia gas flow rate of about 0.1 to about 5.0 (SLM), a nitrogen gas flow rate of about 0.1 to about 10.0 (SLM), RF power of about 0.1 to about 10.0 (kW), and pressure of about 10 to about 500 (Pa).

The multilayer film 20 may be preferably formed at a substrate temperature of about 150 degrees Celsius or less. This is because heat damage to the organic layer 13 may be avoided.

In this way, on the upper electrode 12, the first layer 21 of the high-refractive-index film, the second layer 22 of the low-refractive-index film, the third layer 23 of the high-refractive-index film, and the fourth layer 24 of the low-refractive-index film are laminated in this order. Between the first layer 21 of the high-refractive-index film and the second layer 22 of the low-refractive-index film, the third interface P3 is formed as the additional interface of the resonator structure MC. Between the second layer 22 of the low-refractive-index film and the third layer 23 of the high-refractive-index film, the fourth interface P4 is formed as the additional interface of the resonator structure MC.

Afterwards, the bonding layer (not illustrated) is formed on the multilayer film 20, and the counter substrate (not illustrated) is laminated and sealed. The display unit illustrated in Fig. 1 to Fig. 3 is thereby completed.

In this display unit, the sampling transistor 3A conducts in response to a control signal supplied from the scanning line WSL, and a signal potential of an image signal supplied from the signal line DTL is sampled and retained at the retention capacitor 3C. Further, a current is supplied from the power source line DSL to the driving transistor 3B, and a driving current is supplied to the light-emitting device 3D (the

organic EL devices

10R, 10G, and 10B) according to the signal potential retained at the retention capacitor 3C. The light-emitting device 3D (the

organic EL devices

10R, 10G, and 10B) is caused to emit light at an intensity corresponding to the signal potential of the image signal, by the supplied driving current. This light is extracted after passing through the upper electrode 12, the color filter, and the counter substrate (not illustrated).

Here, the end face on the light-emitting layer 13B side of the lower electrode 11 is used for the first interface P1, the end face on the light-emitting layer 13B side of the upper electrode 12 is used for the second interface P2, and the resonator structure MC using the organic layer 13 as the resonance section is provided. Therefore, the light generated in the light-emitting layer 13B of each of the

organic EL devices

10R, 10G, and 10B causes multiple interaction between the first interface P1 and the second interface P2, thereby improving the brightness in the front direction, the color purity, and the like.

Further, the multilayer film 20 in which the high-refractive-index films and the low-refractive-index films are alternately laminated is present on the outer side of the upper electrode 12, and one or a plurality of additional interfaces of the resonator structure MC are provided between the high-refractive-index film and the low-refractive-index film of the multilayer film 20. Specifically, the multilayer film 20 includes the first layer 21 of the high-refractive-index film, the second layer 22 of the low-refractive-index film, the third layer 23 of the high-refractive-index film, and the fourth layer 24 of the low-refractive-index film, in this order from the upper electrode 12 side. The resonator structure MC has the third interface P3 as the additional interface between the first layer 21 and the second layer 22, and also has the fourth interface P4 as the additional interface between the second layer 22 and the third layer 23.

Thus having the third interface P3 and the fourth interface P4 as the additional interfaces on the outer side of the upper electrode 12 increases flexibility in design, and makes it easy to adjust, when two or more monochromatic rays (e.g. R, G, and B) are combined to be emitted, a balance of these monochromatic rays. Therefore, relative changes due to viewing angles of the tristimulus values X, Y, and Z of the combined light are made coherent easily. Thus, a chromaticity change, in particular, in white that is easily perceived, is suppressed, and the viewing-angle dependence of the light-emitting properties is reduced.

In this way, in the present embodiment, the multilayer film 20 in which the high-refractive-index films and the low-refractive-index films are alternately laminated is provided on the outer side of the upper electrode 12, and one or a plurality of additional interfaces of the resonator structure MC are provided between the high-refractive-index film and the low-refractive-index film of the multilayer film 20. Specifically, the third interface P3 is provided between the first layer 21 and the second layer 22, and the fourth interface P4 is provided between the second layer 22 and the third layer 23. Therefore, the flexibility in design of the resonator structure MC is allowed to be improved, and the viewing-angle dependence is allowed to be more easily reduced.

In particular, the multilayer film 20 is configured of the film having silicon (Si) and nitrogen (N) as main components, such as a SiNx film, and thus, a closely-packed and low-water-content film is allowed to be formed even with low-temperature CVD. Therefore, the passivation performance of the multilayer film 20 is allowed to be increased, and reliability is allowed to be enhanced.

(Modification 1)
It is to be noted that, in the above-described first embodiment, the case in which the high-refractive-index films (the first layer 21 and the third layer 23) and the low-refractive-index films (the second layer 22 and the fourth layer 24) are alternately laminated to be four layers of the multilayer film 20 has been described. However, the number of laminated layers of the multilayer film 20 is not limited to four. The high-refractive-index films and the low-refractive-index films may be alternately laminated to be six layers, eight layers, or any of even-numbered layers more than that.

For example, as illustrated in Fig. 5, the high-refractive-index films (the first layer 21, the third layer 23, a fifth layer 25, and a seventh layer 27) and the low-refractive-index films (the second layer 22, the fourth layer 24, a sixth layer 26, and an eighth layer 28) may be laminated alternately to be eight layers. In this case, the third interface P3 is formed between the first layer 21 and the second layer 22, the fourth interface P4 is formed between the second layer 22 and the third layer 23, and a fifth interface P5 is formed between the third layer 23 and the fourth layer 24. Further, a sixth interface P6 is formed between the fourth layer 24 and the fifth layer 25, a seventh interface P7 is formed between the fifth layer 25 and the sixth layer 26, and an eighth interface P8 is formed between the sixth layer 26 and the seventh layer 27.

In the modification 1, a layer (the eighth layer 28) farthest from the upper electrode 12 among the layers of the multilayer film 20 is a low-refractive-index film, namely, a loose film. Therefore, it is possible to suppress entrance of water and the like from a gap, by raising a film formation rate of the eighth layer 28 to increase the thickness thereof, and covering a foreign substance and/or a projection on a lower-layer film (the organic layer 13, the upper electrode 12, and/or the like).

(Modification 2)
In the modification 1, the case in which the number of laminated layers of the multilayer film 20 is an even number has been described. However, the number of laminated layers of the multilayer film 20 is not limited to an even number, and the high-refractive-index films and the low-refractive-index films may be laminated alternately to form an odd number of layers.

For example, as illustrated in Fig. 6, the high-refractive-index films (the first layer 21, the third layer 23, the fifth layer 25, the seventh layer 27, and a ninth layer 29) and the low-refractive-index films (the second layer 22, the fourth layer 24, the sixth layer 26, and the eighth layer 28) may be laminated alternately to be nine layers. In this case, the third interface P3 is formed between the first layer 21 and the second layer 22, the fourth interface P4 is formed between the second layer 22 and the third layer 23, and the fifth interface P5 is formed between the third layer 23 and the fourth layer 24. Further, the sixth interface P6 is formed between the fourth layer 24 and the fifth layer 25, the seventh interface P7 is formed between the fifth layer 25 and the sixth layer 26, the eighth interface P8 is formed between the sixth layer 26 and the seventh layer 27, and a ninth interface P9 is formed between the seventh layer 27 and the eighth layer 28.

In the modification 2, a layer (the ninth layer 29) farthest from the upper electrode 12 among the layers of the multilayer film 20 is a high-refractive-index film, namely, a film that is closely packed and has a high silicon component ratio. In this case, it is difficult to raise a film formation rate of the ninth layer 29 to increase the thickness thereof. However, in a case in which the total thickness of the multilayer film 20 is sufficiently large, it is possible to suppress entrance of water and the like from a gap, by covering a foreign substance and/or a projection on a lower-layer film (the organic layer 13, the upper electrode 12, and/or the like) with the first layer 21 to the eighth layer 28, even when the thickness of the ninth layer 29 is small.

(Second Embodiment)
Fig. 7 illustrates a cross-sectional configuration of a multilayer film 20 in a display unit according to a second embodiment of the disclosure. The display unit of the second embodiment is different from that of the first embodiment in terms of configuration of the multilayer film 20, but is otherwise similar in configuration, functions, and effects to those of the first embodiment. Therefore, the same elements as those of the first embodiment will be provided with the same reference numerals as those thereof.

A substrate 10, a lower electrode 11, an upper electrode 12, and an organic layer 13 are configured in a manner similar to those of the first embodiment.

The multilayer film 20 includes a first layer 21 of a high-refractive-index film, a second layer 22 of a low-refractive-index film, and a third layer 31 in this order from the upper electrode 12 side. In the third layer 31, a refractive index continuously decreases from the second layer 22 side, along an emitted-light outgoing direction. A resonator structure MC has a third interface P3 as an additional interface, between the first layer 21 and the second layer 22.

An optical distance L1 between a first interface P1 and a second interface P2, as well as an optical distance L2 between the first interface P1 and the third interface P3 are similar to those of the first embodiment.

The multilayer film 20 is configured of an inorganic material, an organic material, or a combination thereof, as with the first embodiment. Above all, the multilayer film 20 may be configured of, preferably, a film having silicon (Si) and nitrogen (N) as main components such as SiNx, SiON, and SiCN, as with the first embodiment.

A configuration of each of the first layer 21, the second layer 22, and the third layer 31 of the multilayer film 20 will be described below.

The first layer 21 and the second layer 22 are configured in a manner similar to those of the first embodiment.

The third layer 31 is a layer farthest from the upper electrode 12, among the layers of the multilayer film 20. The third layer 31 is a film provided to prevent entrance of water and the like from a gap, by covering a foreign substance and/or a projection on a lower-layer film (the organic layer 13, the upper electrode 12, and/or the like) when the foreign substance and/or the projection exist.

The third layer 31 may be configured of, for example, a film having silicon (Si) and nitrogen (N) as main components, such as a SiNx film. The third layer 31 is provided as a film that becomes looser along the emitted-light outgoing direction from the second layer 22 side by adjustment of film formation conditions. Therefore, the refractive index continuously decreases along the emitted-light outgoing direction from the second layer 22 side.

Preferably, when a refractive index on the second layer 22 side of the third layer 31 is assumed to be "n31", and a refractive index of the second layer 22 is assumed to be "n2", a relation of n2 < n31 may hold. When the refractive index n31 on the second layer 22 side of the third layer 31 is too low, it is difficult to allow the third interface P3 between the first layer 21 and the second layer 22 to have a reflection function as a resonance face of the resonator structure MC.

In addition, preferably, the refractive index of the third layer 31 may continuously decrease along the emitted-light outgoing direction from the second layer 22 side, in the other words, there may be no increase in the refractive index of the third layer 31 at some midpoint. This makes is possible to decrease light absorption in the third layer 31, and to enhance extraction efficiency.

The third layer 31 may have a thickness of preferably about 1 micrometer or more, and more preferably about 1 micrometer or more and 10 micrometers or less. This is because when the thickness is less than 1 micrometer, the foreign substance and/or the projection on the lower-layer film are unlikely to be covered with reliability. In addition, since the third layer 31 includes a loose portion in a part of a thickness direction, it is possible to raise a film formation rate and to readily increase the thickness to 1 micrometer or more.

An extinction coefficient of the third layer 31 may be, preferably, for example, about 0.01 or less. This is because, in a case in which the thickness of the third layer 31 is 1 micrometer or more that is thick, when absorption of light of the third layer 31 is large, light emitted from the organic layer 13 may be absorbed, and the extraction efficiency may be reduced.

The display unit of the second embodiment may be manufactured in a manner similar to that of the first embodiment, except that a method of forming the third layer 31 of the multilayer film 20 is different. For example, the method of forming the third layer 31 of the multilayer film 20 may be as follows. During CVD film formation of the third layer 31, the refractive index of the third layer 31 is continuously reduced along the emitted-light outgoing direction from the second layer 22 side, by continuously changing conditions such as a silane gas flow rate, an ammonia gas flow rate, a nitrogen gas flow rate, RF power, and pressure.

In this display unit, driving control is performed for each of light-emitting devices 3D (

organic EL devices

10R, 10G, and 10B) in a manner similar to that described in the first embodiment, and display is performed.

Here, there is provided the resonator structure MC in which an end face on a light-emitting layer 13B side of the lower electrode 11 is provided as the first interface P1, an end face on the light-emitting layer 13B side of the upper electrode 12 is provided as the second interface P2, and the organic layer 13 is provided as a resonance section. Therefore, light generated in the light-emitting layer 13B of each of the

organic EL devices

10R, 10G, and 10B causes multiple interaction between the first interface P1 and the second interface P2, thereby improving brightness in the front direction, color purity, and the like.

In addition, the multilayer film 20 includes the first layer 21 of the high-refractive-index film, the second layer 22 of the low-refractive-index film, and the third layer 31 in this order from the upper electrode 12 side, and in the third layer 31, the refractive index continuously decreases along the emitted-light outgoing direction from the second layer 22 side. The resonator structure MC has the third interface P3 between the first layer 21 and the second layer 22, as the additional interface.

The third interface P3 on the outer side of the upper electrode 12 as the additional interface in this way increases flexibility in design, and also makes it easy to adjust, when two or more monochromatic rays (e.g. R, G, and B) are combined to be emitted, a balance of these monochromatic rays. Therefore, relative changes due to viewing angles of tristimulus values X, Y, and Z of the combined light are made coherent easily. Thus, a chromaticity change, in particular, in white that is easily perceived, is suppressed, and viewing-angle dependence of light-emitting properties is reduced.

In this way, in the second embodiment, the first layer 21 of the high-refractive-index film, the second layer 22 of the low-refractive-index film, and the third layer 31 are provided in this order from the upper electrode 12 side, as the layers of the multilayer film 20. In the third layer 31, the refractive index continuously decreases along the emitted-light outgoing direction from the second layer 22 side. In addition, the third interface P3 is provided between the first layer 21 and the second layer 22. Therefore, the flexibility in design of the resonator structure MC is allowed to be improved, and the viewing-angle dependence is allowed to be more easily reduced.

(Third Embodiment)
Fig. 8 illustrates a configuration of a multilayer film 20 in a display unit according to a third embodiment of the disclosure. The display unit of the third embodiment is different from that of the first embodiment in terms of configuration of the multilayer film 20, but is otherwise similar in configuration, functions, and effects to those of the first embodiment. Therefore, the same elements as those of the first embodiment will be provided with the same reference numerals as those thereof.

The multilayer film 20 includes a first layer 21 of a high-refractive-index film, a second layer 22 of a low-refractive-index film, and a third layer 32, in this order from the upper electrode 12 side. The third layer 32 has a laminated structure of a plurality of

layers

32A, 32B, 32C, 32D, and 32E, and refractive indexes of the plurality of layers 32A to 32E are reduced stepwise along an emitted-light outgoing direction from the second layer 22 side. A resonator structure MC has a third interface P3 as an additional interface, between the first layer 21 and the second layer 22.

The multilayer film 20 is configured of an inorganic material, an organic material, or a combination thereof, as with the first embodiment. Above all, the multilayer film 20 may be configured of, preferably, a film having silicon (Si) and nitrogen (N) as main components, such as SiNx, SiON, and SiCN, as with the first embodiment.

A configuration of each of the first layer 21, the second layer 22, and the third layer 32 of the multilayer film 20 will be described below.

The third layer 32 is a layer farthest from the upper electrode 12, among the layers of the multilayer film 20. The third layer 32 is a film provided to prevent entrance of water and the like from a gap, by covering a foreign substance and/or a projection on a lower-layer film (the organic layer 13, the upper electrode 12, and/or the like) when the foreign substance and/or the projection exist.

The plurality of layers 32A to 32E of the third layer 32 may be each configured of, for example, a film having silicon (Si) and nitrogen (N) as main components, such as a SiNx film. The plurality of layers 32A to 32E are each provided as a film in which the respective densities are reduced stepwise along the emitted-light outgoing direction from the second layer 22 side, by adjustment of film formation conditions and thus, the respective refractive indexes are reduced stepwise along the emitted-light outgoing direction from the second layer 22 side.

Preferably, when the refractive index of the layer 32A closest to the second layer 22 among the plurality of layers 32A to 32E is assumed to be "n31", and a refractive index of the second layer 22 is assumed to be "n2", a relation of n2 < n31 may hold. When the refractive index n31 of the layer 32A is too low, it is difficult to allow the third interface P3 between the first layer 21 and the second layer 22 to have a reflection function as a resonance face of the resonator structure MC.

In addition, preferably, the plurality of layers 32A to 32E may have the respective refractive indexes being reduced stepwise along the emitted-light outgoing direction from the second layer 22 side, in the other words, there may be no increase in refractive index at some midpoint. This makes it possible to decrease light absorption in the third layer 32, and to enhance extraction efficiency.

The third layer 32 may have a thickness (a total thickness of the plurality of layers 32A to 32E) of preferably about 1 micrometer or more, and more preferably about 1 micrometer or more and 10 micrometers or less. This is because when the thickness is less than 1 micrometer, the foreign substance and/or the projection on the lower-layer film (the organic layer 13, the upper electrode 12, and/or the like) are unlikely to be covered with reliability. In addition, since the third layer 32 includes a loose portion in a part of a thickness direction, it is possible to raise a film formation rate and readily increase the thickness to 1 micrometer or more.

An extinction coefficient of the third layer 32 may be, preferably, for example, about 0.01 or less. This is because, in a case in which the thickness of the third layer 32 is 1 micrometer or more that is thick, when absorption of light of the third layer 32 is large, light emitted from the organic layer 13 may be absorbed, and the extraction efficiency may be reduced.

The display unit of the third embodiment may be manufactured in a manner similar to that of the first embodiment, except that a method of forming the third layer 32 of the multilayer film 20 is different. For example, the method of forming the third layer 32 of the multilayer film 20 may be as follows. During CVD film formation of the plurality of layers 32A to 32E of the third layer 32, the refractive indexes of the respective plurality of layers 32A to 32E of the third layer 32 are reduced stepwise along the emitted-light outgoing direction from the second layer 22 side, by gradually changing conditions such as a silane gas flow rate, an ammonia gas flow rate, a nitrogen gas flow rate, RF power, and pressure.

In the display unit, driving control is performed for each of light-emitting devices 3D (

organic EL devices

10R, 10G, and 10B) in a manner similar to that described in the first embodiment, and display is performed. Functions and effects of the display unit are similar to those of the second embodiment.

(Fourth Embodiment)
Fig. 9 illustrates a cross-sectional configuration of a display region 110A in a display unit according to a fourth embodiment of the disclosure. The display unit of the fourth embodiment has a configuration similar to that of the first embodiment, except that an organic EL device 10W generating white light (a color mixture of blue light LB and yellow light LY) is provided as a display device. Therefore, the same elements as those of the first embodiment will be provided with the same reference numerals as those thereof.

A substrate 10, a multilayer film 20, and a resonator structure MC are configured in a manner similar to those of the first embodiment.

The organic EL device 10W includes an organic layer 13 between a lower electrode 11 and an upper electrode 12, and the organic layer 13 includes a light-emitting layer. The lower electrode 11, the organic layer 13, and the upper electrode 12 are laminated in this order from the substrate 10 side.

Here, in the fourth embodiment, the lower electrode 11 corresponds to a specific but not limitative example of "first electrode" in the disclosure. The upper electrode 12 corresponds to a specific but not limitative example of "second electrode" in the disclosure.

The lower electrode (anode) 11 and the upper electrode 12 are configured in a manner similar to those of the first embodiment.

The organic layer 13 may have, for example, a configuration in which a first light-emitting unit 14 generating yellow light LY (or orange light), a charge generation layer 15, and a second light-emitting unit 16 generating blue light LB (or bluish green light) are laminated in this order from the lower electrode 11 side.

The first light-emitting unit 14 may include, for example, a hole injection layer as well as a hole transport layer 14A, a first light-emitting layer 14B, and an electron transport layer 14C, in this order from the lower electrode 11 side.

The charge generation layer 15 is a layer that injects a positive hole for the second light-emitting unit 16 disposed on the upper electrode (the cathode) 12 side, and also injects an electron for the first light-emitting unit 14 disposed on the lower electrode (the anode) 11 side, at the time of voltage application. The charge generation layer 15 may be configured by, for example, providing a metal oxide or a charge-transfer complex compound as a single layer, or by doping the metal oxide or the charge-transfer complex compound with an amine compound. Examples of the metal oxide may include molybdenum oxide (MoO₃), tungsten oxide (WO₃), vanadium oxide (V₂O₅), and rhenium (VII) oxide (Re₂O₇). Examples of the charge-transfer complex compound may include porphyrin, metallotetraphenylporphyrin, metal naphthalocyanine, hexacyanoazatriphenylene, 7,7,8,8-tetracyanoquinodimethane (TCNQ), and 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (F4-TCNQ).

The second light-emitting unit 16 may include, for example, a hole injection layer as well as a hole transport layer 16A, a second light-emitting layer 16B, and an electron transport layer as well as an electron injection layer 16C in this order from the charge generation layer 15 side.

A material of each layer of the first light-emitting unit 14 and each layer of the second light-emitting unit 16 is not limited in particular. The hole injection layer may be configured of, for example, a material such as hexaazatriphenylene (HAT). The hole transport layer may be configured of, for example, a hole transport material such as benzidine derivatives, styrylamine derivatives, triphenylmethane derivatives, and hydrazone derivatives. The first light-emitting layer 14B and the second light-emitting layer 16B may be each configured of, for example, an organic film containing an extremely small amount of an organic substance such as perylene derivatives, coumarin derivatives, pyran-based pigments, and triphenylamine derivatives. The electron transport layer may be configured of, for example, an electron transport material such as quinoline, perylene, bisstyryl, pyrazine, triazole, oxazole, oxadiazole, fluorenone, and derivatives thereof. The electron injection layer may be configured of, for example, lithium fluoride (LiF).

In terms of thickness of each layer of the organic layer 13, preferably, for example, the hole injection layer may be in a range of about 1 nanometer to about 20 nanometers, the hole transport layer may be in a range of about 15 nanometers to about 100 nanometers, the light-emitting layer may be in a range of about 5 nanometers to about 50 nanometers, and the electron transport layer and the electron injection layer are in a range of about 15 nanometers to about 200 nanometers. Further, the thickness of each of the organic layer 13 and the layers thereof is set at a value so that an optical film thickness thereof enables operation of the resonator structure MC.

The display unit of the fourth embodiment may be manufactured as follows, for example.

First, in a manner similar to the first embodiment, a pixel circuit 140, a planarizing film (not illustrated), and the lower electrode 11 are formed on the substrate 10.

Next, the first light-emitting unit 14, the charge generation layer 15, and the second light-emitting unit 16 each having the above-described thickness and being made of the above-described material are sequentially formed on the lower electrode 11, by vacuum deposition, for example, to form the organic layer 13.

Subsequently, the upper electrode 12 having the above-described thickness and being made of the above-described material is formed on the organic layer 13 by vacuum deposition, for example. Thus, a first interface P1 of the resonator structure MC is formed at an end face on the light-emitting layer 14B side of the lower electrode 11, and a second interface P2 of the resonator structure MC is formed at an end face on the light-emitting layer 16B side of the upper electrode 12.

After the upper electrode 12 is formed, a first layer 21 to a fourth layer 24 each having the above-described thickness and being made of the above-described material are formed on the upper electrode 12 to form the multilayer film 20, in a manner similar to the first embodiment. Between the first layer 21 of a high-refractive-index film and the second layer 22 of a low-refractive-index film, a third interface P3 is formed as an additional interface of the resonator structure MC. Between the second layer 22 of the low-refractive-index film and the third layer 23 of a high-refractive-index film, a fourth interface P4 is formed as an additional interface of the resonator structure MC.

Afterwards, a bonding layer (not illustrated) is formed on the multilayer film 20, and a counter substrate (not illustrated) is laminated and sealed. The display unit illustrated in Fig. 9 is thereby completed.

In this display unit, driving control is performed for each light-emitting device 3D (the organic EL device 10W) is performed in a manner similar to that described in the first embodiment, and monochrome display is performed. Functions and effects of the display unit are similar to those of the first embodiment.

It is to be noted that any of the modification 1, the modification 2, the second embodiment, and the third embodiment described above is also applicable to the fourth embodiment.

(Fifth Embodiment)
Fig. 10 illustrates a cross-sectional configuration of a display region 110A in a display unit according to a fifth embodiment of the disclosure. The display unit of the fifth embodiment includes, as display devices, an organic EL device 10W generating white light (a mixed color of yellow light LY and blue light LB) similar to that described in the fourth embodiment, and an organic EL device 10B generating blue light LB similar to that described in the first embodiment. The display unit of the fifth embodiment performs color display, by combining these devices and a color filter 40. Otherwise, the display unit of the fifth embodiment is similar to the first embodiment and the fourth embodiment, in terms of configuration, functions, and effects, and may be manufactured in a manner similar to the first embodiment and the fourth embodiment.

The color filter 40 may include, for example, a red color filter 40R, a green color filter 40G, and a blue color filter 40B. The red color filter 40R and the green color filter 40G are provided to face the organic EL device 10W generating the white light (the mixed color of the yellow light LY and the blue light LB). The blue color filter 40B is provided to face the organic EL device 10B generating the blue light LB. It is to be noted that the blue color filter 40B may be omitted.

The red color filter 40R, the green color filter 40G, and the blue color filter 40B are configured of resin mixed with respective pigments. The red color filter 40R, the green color filter 40G, and the blue color filter 40B are each adjusted to have high optical transmittance in a wavelength range of intended red, green, or blue, and low optical transmittance in other wavelength ranges, by selecting the pigment.

Further, a high-transmittance wavelength range in the color filter 40 agrees with a peak wavelength lambda of a spectrum light desired to be extracted from a resonator structure MC1. Thus, of external light incident from an upper electrode 12 side, only light having a wavelength equal to the peak wavelength lambda of the spectrum of the light desired to be extracted passes through the color filter 40, and external light having other wavelengths is prevented from entering the

organic EL devices

10W and 10B.

It is to be noted that any of the modification 1, the modification 2, the second embodiment, and the third embodiment described above is also applicable to the fifth embodiment.

(Sixth Embodiment)
Fig. 11 illustrates a cross-sectional configuration of a display region 110A in a display unit according to a sixth embodiment of the disclosure. The sixth embodiment is similar to the first embodiment in terms of configuration, functions, and effects, except that light generated in a light-emitting layer 13B is extracted from a lower electrode 11 side (bottom emission). Therefore, the same elements as those of the first embodiment will be provided with the same reference numerals as those thereof.

In the display region 110A, a pixel circuit 140, a planarizing film 50, and a multilayer film 20 are provided in this order on a substrate 10, and

organic EL devices

10R, 10G, and 10B are provided on the multilayer film 20. It is to be noted that Fig. 11 illustrates only a driving transistor 3B of the pixel circuit 140.

The

organic EL devices

10R, 10G, and 10B each include an organic layer 13 between the lower electrode 11 and an upper electrode 12, and the organic layer 13 includes a light-emitting layer. The lower electrode 11, the organic layer 13, and the upper electrode 12 are laminated in this order from the substrate 10 side.

Here, in the sixth embodiment, the lower electrode 11 corresponds to a specific but not limitative example of "second electrode" in the disclosure. The upper electrode 12 corresponds to a specific but not limitative example of "first electrode" in the disclosure.

The substrate 10 and the organic layer 13 are configured in a manner similar to those of the first embodiment.

The lower electrode 11 may be configured of, for example, a transparent electrode made of a material such as ITO, IZO (registered trademark), and SnO₂.

The upper electrode 12 may be configured of a reflecting electrode made of a simple substance or an alloy of a metallic element such as gold (Au), platinum (Pt), nickel (Ni), chromium (Cr), copper (Cu), tungsten (W), aluminum (Al), molybdenum (Mo), and silver (Ag). Further, the upper electrode 12 may be configured of a composite film of the above-described reflecting electrode and a transparent electrode.

In the sixth embodiment, a first interface P1 of a resonator structure MC is an end face on the light-emitting layer 13B side of the upper electrode 12, and a second interface P2 of the resonator structure MC is an end face on the light-emitting layer 13B side of the lower electrode 11.

The multilayer film 20 includes a first layer 21 of a high-refractive-index film, a second layer 22 of a low-refractive-index film, a third layer 23 of a high-refractive-index film, and a fourth layer 24 of a low-refractive-index film, in this order from the lower electrode 11 side. The resonator structure MC has a third interface P3 between the first layer 21 and the second layer 22 as an additional interface, and has a fourth interface P4 between the second layer 22 and the third layer 23 as an additional interface. Otherwise, the multilayer film 20 is configured in a manner similar to that of the first embodiment.

An optical distance L1 between the first interface P1 and the second interface P2, an optical distance L2 between the first interface P1 and the third interface P3, and an optical distance L3 between the first interface P1 and the fourth interface P4 are similar to those of the first embodiment.

The planarizing film 50 is provided to reduce irregularities due to the pixel circuit 140 and the like, and may have a thickness of, for example, about 1 micrometer to about 5 micrometers. The planarizing film 50 may be configured of an organic material such as polyimide, or an inorganic material such as silicon oxide (SiO₂).

The display unit of the sixth embodiment may be manufactured as follows, for example.

First, the pixel circuit 140 is formed on the substrate 10, and a surface of the substrate 10 is planarized by the planarizing film 50. Next, the fourth layer 24 to the first layer 21 each having the above-described thickness and being made of the above-described material are formed on the planarizing film 50, to form the multilayer film 20. A method of forming the multilayer film 20 is similar to that of the first embodiment. Between the first layer 21 and the second layer 22, the third interface P3 is formed as an additional interface of the resonator structure MC. Between the second layer 22 and the third layer 23, the fourth interface P4 is formed as an additional interface of the resonator structure MC.

Next, on the multilayer film 20, a lower electrode material film (not illustrated) made of, for example, ITO is formed by sputtering, for example, to have a thickness of, for example, about 100 nanometers. This lower electrode material film is formed into a predetermined shape by using, for example, photolithography and etching, to form the lower electrode 11. Subsequently, an electrode separation insulating film (not illustrated) is formed between the lower electrodes 11, as necessary.

Afterwards, in a manner similar to the first embodiment, a hole injection layer as well as a hole transport layer 13A, the light-emitting layer 13B, an electron transport layer as well as an electron injection layer 13C each having the above-described thickness and being made of the above-described material are formed on the lower electrode 11 by, for example, vacuum deposition, to form the organic layer 13.

After the organic layer 13 is formed, the upper electrode 12 having the above-described thickness and being made of the above-described material is formed on the organic layer 13 by vacuum deposition, for example. Thus, the second interface P2 of the resonator structure MC is formed at the end face on the light-emitting layer 13B side of the lower electrode 11, and the first interface P1 of the resonator structure MC is formed at the end face on the light-emitting layer 13B side of the upper electrode 12.

Afterwards, a bonding layer (not illustrated) is formed on the multilayer film 20, and a counter substrate (not illustrated) is laminated and sealed. The display unit illustrated in Fig. 11 is thereby completed.

organic EL devices

10R, 10G, and 10B) in a manner similar to that described in the first embodiment, and display is performed. Functions and effects of the display unit are similar to those of the first embodiment.

It is to be noted that any of the modification 1, the modification 2, the second embodiment, and the third embodiment is also applicable to the sixth embodiment.

(Modification 3)
Fig. 12 illustrates a cross-sectional configuration of a display region 110A in a display unit according to a modification 3. The modification 3 is equivalent to the sixth embodiment, except that the fourth layer 24 of the multilayer film 20 also serves as the planarizing film 50. Otherwise, the modification 3 is similar to the sixth embodiment in terms of configuration, functions, and effects, and may be manufactured in a manner similar to the sixth embodiment.

It is to be noted that any of the modification 1, the modification 2, the second embodiment, and the third embodiment is also applicable to the modification 3.
(Examples)

Further, specific Examples of the present disclosure will be described.

(Example 1)
The display unit of the first embodiment was produced. In this process, the first layer 21 to the fourth layer 24 of the multilayer film 20 were each configured of a SiNx film, as illustrated in Fig. 13.

(Comparative Example 1)
A display unit was produced in a manner similar to the Example 1, except that a single-layered protective film 60 made of a SiNx film as illustrated in Fig. 14 was provided on an outer side of an upper electrode. A refractive index n60 of the protective film 60 was assumed to be constant.

(Viewing Angle Properties)
The obtained display unit of each of the Example 1 and the comparative example 1 were each caused to emit white light, and a chromaticity change (delta u'v') from when a light-emitting surface was viewed from front (at 0 degree) to when the light-emitting surface was viewed from an oblique direction (at 15 degrees, 30 degrees, 45 degrees, and 60 degrees) was examined. Fig. 15 illustrates the results.

As illustrated in Fig. 15, the chromaticity change due to the viewing angle was significantly suppressed in the Example 1, as compared with that of the comparative example 1. In other words, it was found that the viewing-angle dependence was reduced more easily, by providing the multilayer film 20 in which the high-refractive-index films and the low-refractive-index films were alternately laminated on the outer side of the upper electrode 12, and providing one or the plurality of additional interfaces between the high-refractive-index film and the low-refractive-index film of the multilayer film 20.

(Example 2)
A display unit was produced in a manner similar to the Example 1. In this process, the second layer 22 (the low-refractive-index film) of the multilayer film 20 was configured of a SiOx film as illustrated in Fig. 16.

(High-Temperature Storage Characteristics)
For the obtained display unit of each of the Example 1 and the Example 2, a pixel erosion incidence after storage at a temperature of about 80 degrees Celsius and about a humidity of 90% was examined. Fig. 17 illustrates the results.

As illustrated in Fig. 17, the pixel erosion incidence in the Example 1 was improved, as compared with that in the Example 2. In other words, it was found that, by configuring the multilayer film 20 with a film having silicon (Si) and nitrogen (N) as main components, a closely-packed and low-water-content film was allowed to be obtained even when being formed by low-temperature CVD, and also the passivation performance of the multilayer film 20 was allowed to be increased, and high-temperature storage characteristics and reliability were allowed to be enhanced.

(Application Examples)
Next, application examples of the display unit according to any of the above-described embodiments will be described with reference to Fig. 18 to Fig. 29. The display unit according to each of the above-described embodiments is applicable to electronic apparatuses in all fields, which display externally-inputted image signals or internally-generated image signals as still or moving images. The electronic apparatuses may include, for example, television receivers, digital cameras, laptop computers, portable terminals such as portable telephones and smartphones, and video cameras, and the like.

(Module)
The display unit according to any of the above-described embodiments may be incorporated, for example, as a module illustrated in Fig. 18, into any of various kinds of electronic apparatuses such as application examples 1 to 7 which will be described later. In the module, for example, an external connection terminal (not illustrated) may be formed in a frame region 110B of a substrate 10, by extending wiring. The external connection terminal may be provided with a flexible printed circuit (FPC) 150 for input and output of signals.

(Application Example 1)
Fig. 19 and Fig. 20 each illustrate an appearance of an electronic book 210 to which the display unit of any of the above-described embodiments is applied. The electronic book 210 may include, for example, a display section 211 and a non-display section 212, and the display section 211 is configured using the display unit according to any of the above-described embodiments.

(Application Example 2)
Fig. 21 and Fig. 22 each illustrate an appearance of a smartphone 220 to which the display unit of any of the above-described embodiments is applied. The smartphone 220 may include, for example, a display section 221 and an operation section 222 on a front side, and include a camera 223 on a back side. The display section 221 is configured using the display unit according to any of the above-described embodiments.

(Application Example 3)
Fig. 23 illustrates an appearance of a television receiver 230 to which the display unit of any of the above-described embodiments is applied. The television receiver 230 may include, for example, an image-display screen section 233 including a front panel 231 and a filter glass 232. The image-display screen section 233 is configured using the display unit according to any of the above-described embodiments.

(Application Example 4)
Fig. 24 and Fig. 25 each illustrate an appearance of a digital camera 240 to which the display unit of any of the above-described embodiments is applied. The digital camera 240 may include, for example, a flash emitting section 241, a display section 242, a menu switch 243, and a shutter release 244. The display section 242 is configured using the display unit according to any of the above-described embodiments.

(Application Example 5)
Fig. 26 illustrates an appearance of a laptop computer 250 to which the display unit of any of the above-described embodiments is applied. The laptop computer 250 may include, for example, a main body section 251, a keyboard 252 provided to enter characters and the like, and a display section 253 displaying an image. The display section 253 is configured using the display unit according to any of the above-described embodiments.

(Application Example 6)
Fig. 27 illustrates an appearance of a video camera 260 to which the display unit of any of the above-described embodiments is applied. The video camera 260 may include, for example, a main body section 261, a lens 262 disposed on a front face of the main body section 261 to shoot an image of a subject, a start/stop switch 263 used in shooting, and a display section 264. The display section 264 is configured using the display unit according to any of the above-described embodiments.

(Application Example 7)
Fig. 28 and Fig. 29 each illustrate an appearance of a portable telephone 270 to which the display unit of any of the above-described embodiments is applied. The portable telephone 270 may be, for example, a unit in which an upper housing 271 and a lower housing 272 are connected by a coupling section (a hinge section) 273, and may include a display 274, a sub-display 275, a picture light 276, and a camera 277. The display 274 or the sub-display 275 is configured using the display unit according to any of the above-described embodiments.

The disclosure has been described with reference to the example embodiments and some Examples, but is not limited thereto, and may be variously modified.

For example, in the organic EL device 10W described in each of the fourth embodiment and the fifth embodiment, in place of the first light-emitting unit 14 generating the yellow light LY, a light-emitting unit generating green light and a light-emitting unit generating red light may be provided to obtain white light by a color mixture of red light, green light, and blue light.

Further, the materials and thicknesses, or the film formation methods and film formation conditions of the respective layers described in each of the embodiments are illustrative and not limitative. Other materials and thicknesses, or other film formation methods and film formation conditions may be adopted.

Furthermore, the embodiments and the Examples have been described above with reference to the specific configurations of the

organic EL devices

10R, 10G, 10B, and 10W. However, it is not necessary to provide all the layers, and other layer may be further provided.

In addition, the disclosure is applicable to a display unit using an inorganic EL device, or an electrophoretic display device, other than an organic EL device.

It is to be noted that the disclosure may be configured as follows.
(1)
A display unit including
a display device including a light-emitting layer between a first electrode and a second electrode, and including a resonator structure resonating light between a plurality of interfaces, the light being generated in the light-emitting layer, wherein
the display device includes a multilayer film in which high-refractive-index films and low-refractive-index films are alternately laminated, the multilayer film being provided on an outer side of the second electrode, and
the resonator structure has a first interface on the first electrode side, a second interface on the second electrode side, and one or a plurality of additional interfaces, the one or the plurality of additional interfaces being provided between the high-refractive-index film and the low-refractive-index film of the multilayer film.
(2)
The display unit according to (1), wherein the multilayer film is configured of a film having silicon (Si) and nitrogen (N) as main components.
(3)
The display unit according to (1) or (2), wherein
the multilayer film includes a first layer of a high-refractive-index film, a second layer of a low-refractive-index film, a third layer of a high-refractive-index film, and a fourth layer of a low-refractive-index film, in order from the second electrode side, and
the resonator structure has a third interface between the first layer and the second layer as the additional interface, and a fourth interface between the second layer and the third layer as the additional interface.
(4)
The display unit according to (1) or (2), wherein
the multilayer film includes a first layer of a high-refractive-index film, a second layer of a low-refractive-index film, and a third layer, in order from the second electrode side,
the third layer has a refractive index continuously decreasing along an emitted-light outgoing direction from the second layer side, and
the resonator structure has a third interface between the first layer and the second layer as the additional interface.
(5)
The display unit according to (1) or (2), wherein
the multilayer film includes a first layer of a high-refractive-index film, a second layer of a low-refractive-index film, and a third layer, in order from the second electrode side,
the third layer has a laminated structure of a plurality of layers, and the plurality of layers have respective refractive indexes that are reduced stepwise along an emitted-light outgoing direction from the second layer side, and
the resonator structure has a third interface between the first layer and the second layer as the additional interface.
(6)
The display unit according to any one of (1) to (5), wherein, when a peak intensity belonging to N-H stretching vibration in neighborhood of 3350 cm^-1 in a Fourier transform infrared spectroscopy spectrum is assumed to be "A", and a peak intensity belonging to Si-H stretching vibration in neighborhood of 2160 cm^-1 is assumed to be "B", a B/A ratio of a layer closest to the second electrode in the multilayer film is larger than a B/A ratio of a layer farthest from the second electrode in the multilayer film.
(7)
The display unit according to any one of (1) to (6), wherein a layer farthest from the second electrode in the multilayer film has a thickness of about 1 micrometer or more.
(8)
The display unit according to any one of (1) to (7), wherein a layer farthest from the second electrode in the multilayer film has an extinction coefficient of about 0.01 or less.
(9)
The display unit according to any one of (1) to (8), wherein the display device is provided as each of a plurality of display devices that emit rays of single colors different from each other, the rays being in a visible light region.
(10)
The display unit according to any one of (1) to (8), wherein the display device generates white light.
(11)
The display unit according to any one of (1) to (8), wherein
the display device is provided as each of a plurality of display devices that include a white-light emitting device generating white light and a blue-light emitting device generating blue light, and
a red color filter and a green color filter are provided to face the white-light emitting device.
(12)
A method of manufacturing a display unit that includes a display device, the display device including a light-emitting layer between a first electrode and a second electrode, and also including a resonator structure resonating light between a plurality of interfaces, the light being generated in the light-emitting layer, the method including:
forming the first electrode, the light-emitting layer, and the second electrode, and also forming a first interface of the resonator structure on the first electrode side and a second interface of the resonator structure on the second electrode side; and
forming a multilayer film in which high-refractive-index films and low-refractive-index films are alternately laminated, the multilayer film being provided on an outer side of the second electrode, and also forming one or a plurality of additional interfaces of the resonator structure, the one or the plurality of additional interfaces being formed between the high-refractive-index film and the low-refractive-index film of the multilayer film.
(13)
The method according to (12), wherein the multilayer film is configured of a film having silicon (Si) and nitrogen (N) as main components.
(14)
The method according to (13), wherein the multilayer film is formed by low-temperature chemical vapor deposition, and the high-refractive-index film and the low-refractive-index film are varied in terms of refractive index, by adjusting a chemical vapor deposition condition.
(15)
The method according to (14), wherein the multilayer film is formed at a temperature of about 150 degrees Celsius or less.
(16)
An electronic apparatus including a display unit, the display unit including
a display device including a light-emitting layer between a first electrode and a second electrode, and also including a resonator structure resonating light between a plurality of interfaces, the light being generated in the light-emitting layer, wherein
the display device includes a multilayer film in which high-refractive-index films and low-refractive-index films are alternately laminated, the multilayer film being provided on an outer side of the second electrode, and
the resonator structure has a first interface on the first electrode side, a second interface on the second electrode side, and one or a plurality of additional interfaces, the one or the plurality of additional interfaces being provided between the high-refractive-index film and the low-refractive-index film of the multilayer film.

The present disclosure contains subject matter related to that disclosed in Japanese Priority Patent Application JP 2012-199640 filed in the Japan Patent Office on September 11, 2012, the entire content of which is hereby incorporated by reference.

It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factors insofar as they are within the scope of the appended claims or the equivalents thereof.

10R, 10G, 10B, 10W organic EL device
10 substrate
11 lower electrode
12 upper electrode
13 organic layer
13B light-emitting layer
14 first light-emitting unit
14B first light-emitting layer
15 charge generation layer
16 second light-emitting unit
16B second light-emitting layer
20 multilayer film
21 first layer
22 second layer
23, 31, 32 third layer
24 fourth layer
40 color filter
40R red color filter
40G green color filter
40B blue color filter
50 planarizing film
110A display region
121 horizontal selector
131 write scanner
132 power supply scanner
140 pixel circuit
MC resonator structure
P1 first interface
P2 second interface
P3 third interface
P4 fourth interface

Claims

A display unit comprising
a display device including a light-emitting layer between a first electrode and a second electrode, and including a resonator structure resonating light between a plurality of interfaces, the light being generated in the light-emitting layer, wherein
the display device includes a multilayer film in which high-refractive-index films and low-refractive-index films are alternately laminated, the multilayer film being provided on an outer side of the second electrode, and
the resonator structure has a first interface on the first electrode side, a second interface on the second electrode side, and one or a plurality of additional interfaces, the one or the plurality of additional interfaces being provided between the high-refractive-index film and the low-refractive-index film of the multilayer film.
The display unit according to claim 1, wherein the multilayer film is configured of a film having silicon (Si) and nitrogen (N) as main components.
The display unit according to claim 1, wherein
the multilayer film includes a first layer of a high-refractive-index film, a second layer of a low-refractive-index film, a third layer of a high-refractive-index film, and a fourth layer of a low-refractive-index film, in order from the second electrode side, and
the resonator structure has a third interface between the first layer and the second layer as the additional interface, and a fourth interface between the second layer and the third layer as the additional interface.
The display unit according to claim 1, wherein
the multilayer film includes a first layer of a high-refractive-index film, a second layer of a low-refractive-index film, and a third layer, in order from the second electrode side,
the third layer has a refractive index continuously decreasing along an emitted-light outgoing direction from the second layer side, and
the resonator structure has a third interface between the first layer and the second layer as the additional interface.
The display unit according to claim 1, wherein
the multilayer film includes a first layer of a high-refractive-index film, a second layer of a low-refractive-index film, and a third layer, in order from the second electrode side,
the third layer has a laminated structure of a plurality of layers, and the plurality of layers have respective refractive indexes that are reduced stepwise along an emitted-light outgoing direction from the second layer side, and
the resonator structure has a third interface between the first layer and the second layer as the additional interface.
The display unit according to claim 1, wherein, when a peak intensity belonging to N-H stretching vibration in neighborhood of 3350 cm^-1 in a Fourier transform infrared spectroscopy spectrum is assumed to be "A", and a peak intensity belonging to Si-H stretching vibration in neighborhood of 2160 cm^-1 is assumed to be "B", a B/A ratio of a layer closest to the second electrode in the multilayer film is larger than a B/A ratio of a layer farthest from the second electrode in the multilayer film.
The display unit according to claim 1, wherein a layer farthest from the second electrode in the multilayer film has a thickness of about 1 micrometer or more.
The display unit according to claim 1, wherein a layer farthest from the second electrode in the multilayer film has an extinction coefficient of about 0.01 or less.
The display unit according to claim 1, wherein the display device is provided as each of a plurality of display devices that emit rays of single colors different from each other, the rays being in a visible light region.
The display unit according to claim 1, wherein the display device generates white light.
The display unit according to claim 1, wherein
the display device is provided as each of a plurality of display devices that include a white-light emitting device generating white light and a blue-light emitting device generating blue light, and
a red color filter and a green color filter are provided to face the white-light emitting device.
A method of manufacturing a display unit that includes a display device, the display device including a light-emitting layer between a first electrode and a second electrode, and also including a resonator structure resonating light between a plurality of interfaces, the light being generated in the light-emitting layer, the method comprising:
forming the first electrode, the light-emitting layer, and the second electrode, and also forming a first interface of the resonator structure on the first electrode side and a second interface of the resonator structure on the second electrode side; and
forming a multilayer film in which high-refractive-index films and low-refractive-index films are alternately laminated, the multilayer film being provided on an outer side of the second electrode, and also forming one or a plurality of additional interfaces of the resonator structure, the one or the plurality of additional interfaces being formed between the high-refractive-index film and the low-refractive-index film of the multilayer film.
The method according to claim 12, wherein the multilayer film is configured of a film having silicon (Si) and nitrogen (N) as main components.
The method according to claim 13, wherein the multilayer film is formed by low-temperature chemical vapor deposition, and the high-refractive-index film and the low-refractive-index film are varied in terms of refractive index, by adjusting a chemical vapor deposition condition.
The method according to claim 14, wherein the multilayer film is formed at a temperature of about 150 degrees Celsius or less.
An electronic apparatus including a display unit, the display unit comprising
a display device including a light-emitting layer between a first electrode and a second electrode, and also including a resonator structure resonating light between a plurality of interfaces, the light being generated in the light-emitting layer, wherein
the display device includes a multilayer film in which high-refractive-index films and low-refractive-index films are alternately laminated, the multilayer film being provided on an outer side of the second electrode, and
the resonator structure has a first interface on the first electrode side, a second interface on the second electrode side, and one or a plurality of additional interfaces, the one or the plurality of additional interfaces being provided between the high-refractive-index film and the low-refractive-index film of the multilayer film.