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TWI688094B - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
TWI688094B
TWI688094B TW108137357A TW108137357A TWI688094B TW I688094 B TWI688094 B TW I688094B TW 108137357 A TW108137357 A TW 108137357A TW 108137357 A TW108137357 A TW 108137357A TW I688094 B TWI688094 B TW I688094B
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layer
light
display area
emitting device
electrode
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TW108137357A
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TW202040816A (en
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顏宏修
陳璽安
宋怡樺
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友達光電股份有限公司
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Abstract

A light emitting device includes a first electrode, a second electrode, an organic layer, and an isolation layer. The organic layer is between the first electrode and the second electrode. The isolation layer is in the organic layer, between the second electrode and the organic layer, or between the first electrode and the organic layer. The light emitting device is divided into a displaying region and a non-displaying region. The isolation layer is at the non-displaying region.

Description

發光裝置Light emitting device

本發明是關於一種發光裝置,且特別是關於一種用於顯示面板的顯示區邊緣的發光裝置。 The present invention relates to a light-emitting device, and particularly to a light-emitting device for the edge of a display area of a display panel.

現有一種顯示面板,此顯示面板具有顯示區與非顯示區,顯示區包括多個發光裝置,每個發光裝置包括發光層與對應的主動元件,每個發光層可形成一個像素,且這些發光層會排列而形成像素陣列,而此像素陣列可用以顯示影像。在一些應用中,顯示面板或其顯示區可為圓弧形或具有圓弧形的邊緣。此種顯示面板例如是應用在智慧型手錶上,此種智慧型手錶上的顯示面板的顯示區可配合錶身的形狀而呈圓形,而非顯示區則圍繞顯示區呈環形。 There is a display panel with a display area and a non-display area. The display area includes a plurality of light-emitting devices, each light-emitting device includes a light-emitting layer and a corresponding active element, each light-emitting layer can form a pixel, and these light-emitting layers It will be arranged to form a pixel array, and this pixel array can be used to display images. In some applications, the display panel or its display area may be rounded or have rounded edges. Such a display panel is applied to a smart watch, for example, the display area of the display panel on the smart watch can be rounded according to the shape of the watch body, and the non-display area is circular around the display area.

根據現有技術的顯示面板,由於現有發光裝置的發光層是矩形的,因此排列於顯示區邊緣的發光裝置會造成顯示區所呈現的影像邊緣呈現鋸齒狀。使用者會看到影像的鋸齒狀邊緣而造成使用體驗不佳。 According to the display panel of the prior art, since the light-emitting layer of the existing light-emitting device is rectangular, the light-emitting devices arranged at the edge of the display area will cause the image edge presented by the display area to appear jagged. The user will see the jagged edges of the image and cause a poor user experience.

本發明的至少一實施例提出一種發光裝置,以避免顯示面板的顯示區所呈現的影像邊緣呈現鋸齒狀。 At least one embodiment of the present invention provides a light-emitting device to prevent the edges of the image displayed in the display area of the display panel from being jagged.

本發明的至少一實施例提出一種發光裝置,其包括第一電極、第二電極、有機層與阻隔層。有機層位於第一電極與第二電極之間, 阻隔層位於有機層之中、第二電極與有機層之間或第一電極與有機層之間。其中發光裝置區分為顯示區與非顯示區,且阻隔層位於非顯示區。 At least one embodiment of the present invention provides a light-emitting device including a first electrode, a second electrode, an organic layer, and a barrier layer. The organic layer is located between the first electrode and the second electrode, The barrier layer is located in the organic layer, between the second electrode and the organic layer or between the first electrode and the organic layer. The light emitting device is divided into a display area and a non-display area, and the barrier layer is located in the non-display area.

本發明的至少一實施例提出一種發光裝置,其包括第一電極、第二電極與有機層,有機層位於第一電極與第二電極之間。其中發光裝置區分為顯示區與非顯示區,且有機層於非顯示區的厚度小於有機層於顯示區的厚度。 At least one embodiment of the present invention provides a light-emitting device that includes a first electrode, a second electrode, and an organic layer, and the organic layer is located between the first electrode and the second electrode. The light-emitting device is divided into a display area and a non-display area, and the thickness of the organic layer in the non-display area is smaller than the thickness of the organic layer in the display area.

綜上所述,根據本發明各實施例的發光裝置,其可設置於顯示面板的顯示區邊緣,藉由位於非顯示區的阻隔層或藉由有機層於非顯示區的厚度小於有機層於顯示區的厚度的設計,使排列於顯示區邊緣的發光裝置可局部發光且局部不發光,而發光裝置的發光與不發光的交界處可對應於顯示區邊緣的形狀,從而避免顯示區所呈現的影像邊緣呈現鋸齒狀,並改善使用者的使用體驗。 In summary, according to various embodiments of the present invention, the light-emitting device can be disposed at the edge of the display area of the display panel, and the thickness of the non-display area by the barrier layer at the non-display area or by the organic layer is less than that of the organic layer at The thickness of the display area is designed so that the light-emitting devices arranged at the edge of the display area can partially emit light and not partially emit light, and the boundary between the light-emitting device and the non-light-emitting device can correspond to the shape of the edge of the display area, thereby avoiding the display area The edges of the image appear jagged and improve the user experience.

以下在實施方式中詳細敘述本發明之詳細特徵以及優點,其內容足以使任何熟悉相關技術者暸解本發明之技術內容並據以實施,且根據本說明書所揭露之內容、申請專利範圍及圖式,任何熟習相關技術者可輕易地理解本發明相關之目的及優點。 The following describes in detail the detailed features and advantages of the present invention in the embodiments. The content is sufficient for anyone familiar with the relevant technology to understand and implement the technical content of the present invention, and according to the content disclosed in this specification, the scope of patent application and the drawings Anyone who is familiar with related technologies can easily understand the purpose and advantages of the present invention.

10:顯示面板 10: Display panel

11:顯示區 11: Display area

12:非顯示區 12: Non-display area

100、100a:發光裝置 100, 100a: light-emitting device

110:基板 110: substrate

120:主動元件 120: Active components

121:第一導體層 121: first conductor layer

122:第一絕緣層 122: the first insulating layer

123:通道層 123: channel layer

124:第二導體層 124: second conductor layer

125:第二絕緣層 125: second insulating layer

131:第一電極 131: First electrode

132:第二電極 132: Second electrode

140:有機層 140: Organic layer

141:發光層 141: Luminous layer

142:輔助層 142: Auxiliary layer

1421:第一傳輸層 1421: The first transport layer

1422、1422a:第二傳輸層 1422, 1422a: Second transport layer

150:像素定義層 150: pixel definition layer

160、160a:阻隔層 160, 160a: barrier layer

D:汲極 D: Jiji

D1、D2:厚度 D1, D2: thickness

EIL:電子注入層 EIL: electron injection layer

ETL:電子傳輸層 ETL: electron transport layer

G:閘極 G: gate

HIL:電洞注入層 HIL: hole injection layer

HTL:電洞傳輸層 HTL: hole transport layer

MA:遮罩 MA: mask

ND:法線方向 ND: normal direction

S:源極 S: source

圖1所示為本發明一實施例的顯示面板的頂視示意圖;圖2所示為圖1的圈起處的局部放大示意圖;圖3所示為圖1的3-3線段處的剖面示意圖,其示出本發明第一實施例的發光裝置; 圖4所示為本發明第二實施例的發光裝置的剖面示意圖;圖5所示為本發明第三實施例的發光裝置的剖面示意圖;圖6所示為本發明第四實施例的發光裝置的剖面示意圖;圖7所示為本發明第五實施例的發光裝置的剖面示意圖;圖8所示為本發明第六實施例的發光裝置的剖面示意圖;圖9所示為本發明第七實施例的發光裝置的剖面示意圖;圖10所示為本發明一實施例的顯示面板蒸鍍製程的頂視示意圖;圖11所示為圖10的顯示面板的局部剖面示意圖一;圖12所示為圖10的顯示面板的局部剖面示意圖二;圖13所示為本發明另一實施例的顯示面板蒸鍍製程的頂視示意圖;圖14所示為圖13的顯示面板的局部剖面示意圖一;以及圖15所示為圖13的顯示面板的局部剖面示意圖二。 1 is a schematic top view of a display panel according to an embodiment of the present invention; FIG. 2 is a partially enlarged schematic view of the circled portion of FIG. 1; FIG. 3 is a schematic cross-sectional view taken along line 3-3 of FIG. 1 , Which shows the light emitting device of the first embodiment of the present invention; 4 is a schematic cross-sectional view of a light emitting device according to a second embodiment of the present invention; FIG. 5 is a schematic cross-sectional view of a light emitting device according to a third embodiment of the present invention; FIG. 6 is a light emitting device according to a fourth embodiment of the present invention 7 is a schematic cross-sectional view of a light emitting device according to a fifth embodiment of the invention; FIG. 8 is a schematic cross-sectional view of a light emitting device according to a sixth embodiment of the invention; FIG. 9 is a seventh embodiment of the invention 10 is a schematic top view of a vapor deposition process of a display panel according to an embodiment of the present invention; FIG. 11 is a schematic partial cross-sectional view 1 of the display panel of FIG. 10; FIG. 12 is a 10 is a partial cross-sectional schematic view of the display panel of FIG. 10; FIG. 13 is a top schematic view of the display panel evaporation process of another embodiment of the present invention; FIG. 14 is a partial cross-sectional schematic view of the display panel of FIG. 13; and 15 is a second schematic partial cross-sectional view of the display panel of FIG. 13.

請參照圖1與圖2,圖1為本發明一實施例的顯示面板10的頂視示意圖,圖2為圖1的圈起處的局部放大示意圖。如圖1與圖2所示,在本實施例中,顯示面板10區分為顯示區11與非顯示區12,且顯示面板10包括多個發光裝置100、100a,發光裝置100、100a排列為陣列。顯示區11呈圓形,且非顯示區12環繞顯示區11,但不限於此。發光裝置100a是位於顯示區11中,而發光裝置100是位於顯示區11的邊緣,即顯示區11與非顯示區12的交界處,且顯示區11的邊緣會呈圓弧形。 Please refer to FIGS. 1 and 2. FIG. 1 is a schematic top view of a display panel 10 according to an embodiment of the present invention. FIG. 2 is a partially enlarged schematic view of a circled portion of FIG. 1. As shown in FIGS. 1 and 2, in this embodiment, the display panel 10 is divided into a display area 11 and a non-display area 12, and the display panel 10 includes a plurality of light emitting devices 100, 100a, and the light emitting devices 100, 100a are arranged in an array . The display area 11 is circular, and the non-display area 12 surrounds the display area 11, but is not limited thereto. The light-emitting device 100 a is located in the display area 11, and the light-emitting device 100 is located at the edge of the display area 11, that is, the boundary between the display area 11 and the non-display area 12, and the edge of the display area 11 will be rounded.

請參照圖3,圖3所示為圖1的3-3線段處的剖面示意圖,其示出本發明第一實施例的發光裝置100、100a。如圖3所示,在本實施例中, 發光裝置100、100a是設置於基板110上,且每一個發光裝置100、100a分別連接至對應的主動元件120。各發光裝置100、100a分別包括第一電極131、第二電極132與有機層140,有機層140位於第一電極131與第二電極132之間,且各發光裝置100、100a之間設置有像素定義層150,像素定義層150使各發光裝置100、100a的第一電極131、第二電極132與有機層140被區隔開來而形成多個像素。 Please refer to FIG. 3, which is a schematic cross-sectional view taken along line 3-3 of FIG. 1, which shows the light emitting devices 100 and 100a of the first embodiment of the present invention. As shown in FIG. 3, in this embodiment, The light-emitting devices 100 and 100a are disposed on the substrate 110, and each light-emitting device 100 and 100a is respectively connected to the corresponding active element 120. Each light emitting device 100, 100a includes a first electrode 131, a second electrode 132, and an organic layer 140, the organic layer 140 is located between the first electrode 131 and the second electrode 132, and a pixel is provided between each light emitting device 100, 100a The definition layer 150 and the pixel definition layer 150 separate the first electrode 131 and the second electrode 132 of the light-emitting devices 100 and 100 a from the organic layer 140 to form a plurality of pixels.

如圖3所示,在本實施例中,各發光裝置100、100a的第一電極131連接至對應的主動元件120,主動元件120可施加特定電壓至對應的發光裝置100、100a,使發光裝置100、100a的有機層140發光。發光裝置100與發光裝置100a的差異在於:發光裝置100是位於顯示區11與非顯示區12的交界處,因此發光裝置100本身亦對應區分為顯示區11與非顯示區12,此外,發光裝置100還包括阻隔層160,阻隔層160是位於非顯示區12。 As shown in FIG. 3, in this embodiment, the first electrode 131 of each light-emitting device 100, 100a is connected to the corresponding active element 120, and the active element 120 can apply a specific voltage to the corresponding light-emitting device 100, 100a, so that the light-emitting device The organic layers 140 of 100 and 100a emit light. The difference between the light-emitting device 100 and the light-emitting device 100a is that the light-emitting device 100 is located at the junction of the display area 11 and the non-display area 12, so the light-emitting device 100 itself is correspondingly divided into the display area 11 and the non-display area 12, in addition, the light-emitting device 100 further includes a barrier layer 160 that is located in the non-display area 12.

在本實施例中,所述位於顯示區11可定義為,在基板110的法線方向ND上與顯示區11重疊且與非顯示區12不重疊;所述位於非顯示區12可定義為,在基板110的法線方向ND上與非顯示區12重疊且與顯示區11不重疊。換言之,如圖3所示,發光裝置100的阻隔層160在基板110的法線方向ND上與非顯示區12重疊且與顯示區11不重疊。 In this embodiment, the location in the display area 11 may be defined as overlapping with the display area 11 and not in the non-display area 12 in the normal direction ND of the substrate 110; the location in the non-display area 12 may be defined as, It overlaps the non-display area 12 and does not overlap the display area 11 in the normal direction ND of the substrate 110. In other words, as shown in FIG. 3, the barrier layer 160 of the light emitting device 100 overlaps the non-display area 12 and does not overlap the display area 11 in the normal direction ND of the substrate 110.

如圖3所示,在本實施例中,發光裝置100的阻隔層160是位於第二電極132與有機層140之間。在一些實施例中,發光裝置100的阻隔層160可位於有機層140之中。在一些實施例中,發光裝置100的阻隔層160可位於第一電極131與有機層140之間。 As shown in FIG. 3, in this embodiment, the barrier layer 160 of the light-emitting device 100 is located between the second electrode 132 and the organic layer 140. In some embodiments, the barrier layer 160 of the light emitting device 100 may be located in the organic layer 140. In some embodiments, the barrier layer 160 of the light emitting device 100 may be located between the first electrode 131 and the organic layer 140.

如圖2與圖3所示,當主動元件120施加特定電壓至發光裝置100a的第一電極131、有機層140與第二電極132,電流會通過發光裝置100a的第一電極131、有機層140與第二電極132以使有機層140受到激發而發光。不過,由於發光裝置100位於非顯示區12處會被阻隔層160阻隔,因此當主動元件120施加同樣的特定電壓至發光裝置100的第一電極131、有機層140與第二電極132,電流僅會通過發光裝置100的第一電極131、有機層140與第二電極132位於顯示區11的部分,而不會通過發光裝置100的第一電極131、有機層140與第二電極132位於非顯示區12的部分。藉此,以如圖1與圖2的頂視角度來看,發光裝置100的有機層140只有位於顯示區11的部分會發光,而位於非顯示區12的部分則不會發光。如圖2所示,位於顯示區11與非顯示區12交界處的發光裝置100會對應於顯示區11邊緣的形狀而局部(位於非顯示區12的部分)不會發光,因而當顯示區11顯示影像時,影像邊緣不會呈現鋸齒狀。 As shown in FIGS. 2 and 3, when the active device 120 applies a specific voltage to the first electrode 131, the organic layer 140, and the second electrode 132 of the light emitting device 100a, current flows through the first electrode 131, the organic layer 140 of the light emitting device 100a With the second electrode 132, the organic layer 140 is excited to emit light. However, since the light emitting device 100 located at the non-display area 12 is blocked by the blocking layer 160, when the active device 120 applies the same specific voltage to the first electrode 131, the organic layer 140, and the second electrode 132 of the light emitting device 100, the current is only The first electrode 131, the organic layer 140, and the second electrode 132 of the light emitting device 100 are located in the display area 11, and the first electrode 131, the organic layer 140, and the second electrode 132 of the light emitting device 100 are not located in the non-display Part of District 12. In this way, from a top-view perspective as shown in FIGS. 1 and 2, only the portion of the organic layer 140 of the light-emitting device 100 located in the display area 11 emits light, while the portion located in the non-display area 12 does not emit light. As shown in FIG. 2, the light-emitting device 100 located at the boundary between the display area 11 and the non-display area 12 will correspond to the shape of the edge of the display area 11 and part (the portion located in the non-display area 12) will not emit light, so when the display area 11 When displaying an image, the edges of the image will not appear jagged.

在本實施例中,阻隔層160為絕緣材料製成。舉例來說,阻隔層160可包括氧化矽(SiOx),且阻隔層160的厚度可介於一奈米至一千奈米之間,但不限於此。由於阻隔層160的關係,覆蓋在阻隔層160上的第二電極132會因為阻隔層160的存在而產生隆起。不過在實際應用上,由於第一電極131、有機層140、第二電極132與阻隔層160的厚度相對薄,因此若以肉眼來看,顯示面板10整體而言仍是呈現平整的表面。 In this embodiment, the barrier layer 160 is made of insulating material. For example, the barrier layer 160 may include silicon oxide (SiOx), and the thickness of the barrier layer 160 may be between one nanometer and one thousand nanometers, but is not limited thereto. Due to the relationship of the barrier layer 160, the second electrode 132 covering the barrier layer 160 may swell due to the presence of the barrier layer 160. However, in practical applications, since the thicknesses of the first electrode 131, the organic layer 140, the second electrode 132, and the barrier layer 160 are relatively thin, if viewed from the naked eye, the display panel 10 as a whole still presents a flat surface.

如圖3所示,在本實施例中,有機層140包括發光層(emissive layer,EML)141與輔助層142,發光層141可被激發而發光,且輔助層142是用以輔助導通第一電極131與第二電極132,使主動元件120可施加相對 較低的電壓至發光裝置100、100a的第一電極131、有機層140與第二電極132,使發光層141發光。換句話說,輔助層142可用以降低第一電極131/第二電極132至發光層141之間的能階差,使電洞/電子更容易由第一電極131/第二電極132注入發光層141,使發光層141發光。 As shown in FIG. 3, in this embodiment, the organic layer 140 includes an emissive layer (EML) 141 and an auxiliary layer 142. The emissive layer 141 can be excited to emit light, and the auxiliary layer 142 is used to assist in conducting the first The electrode 131 and the second electrode 132 enable the active element 120 to be applied oppositely A lower voltage is applied to the first electrode 131, the organic layer 140, and the second electrode 132 of the light-emitting devices 100, 100a, so that the light-emitting layer 141 emits light. In other words, the auxiliary layer 142 can be used to reduce the energy level difference between the first electrode 131/second electrode 132 and the light emitting layer 141, so that holes/electrons can be more easily injected into the light emitting layer from the first electrode 131/second electrode 132 141, causing the light emitting layer 141 to emit light.

在本實施例中,發光裝置100的阻隔層160是位於第二電極132與輔助層142之間,以阻止電洞/電子由第一電極131/第二電極132注入發光層141。在一些實施例中,發光裝置100的阻隔層160可位於輔助層142之中。在一些實施例中,發光裝置100的阻隔層160可位於第一電極131與輔助層142之間。在一些實施例中,發光裝置100的阻隔層160可位於發光層141與輔助層142之間。 In this embodiment, the blocking layer 160 of the light emitting device 100 is located between the second electrode 132 and the auxiliary layer 142 to prevent holes/electrons from being injected into the light emitting layer 141 from the first electrode 131/second electrode 132. In some embodiments, the barrier layer 160 of the light emitting device 100 may be located in the auxiliary layer 142. In some embodiments, the barrier layer 160 of the light emitting device 100 may be located between the first electrode 131 and the auxiliary layer 142. In some embodiments, the barrier layer 160 of the light emitting device 100 may be located between the light emitting layer 141 and the auxiliary layer 142.

如圖3所示,在本實施例中,輔助層142包括第一傳輸層1421與第二傳輸層1422,且發光層141位於第一傳輸層1421與第二傳輸層1422之間。舉例來說,第一傳輸層1421可為電洞傳輸層(hole transport layer,HTL),而第二傳輸層1422可為電子傳輸層(electron transport layer,ETL),並且第一電極131為陽極,而第二電極132為陰極,但不限於此。第一傳輸層1421可降低第一電極131至發光層141之間的能階差,使電洞更容易由第一電極131注入發光層141;而第二傳輸層1422可降低第二電極132至發光層141之間的能階差,使電子更容易由第二電極132注入發光層141。 As shown in FIG. 3, in this embodiment, the auxiliary layer 142 includes a first transmission layer 1421 and a second transmission layer 1422, and the light emitting layer 141 is located between the first transmission layer 1421 and the second transmission layer 1422. For example, the first transport layer 1421 may be a hole transport layer (HTL), and the second transport layer 1422 may be an electron transport layer (ETL), and the first electrode 131 is an anode. The second electrode 132 is a cathode, but it is not limited thereto. The first transmission layer 1421 can reduce the energy level difference between the first electrode 131 and the light-emitting layer 141, so that holes are more easily injected into the light-emitting layer 141 from the first electrode 131; and the second transmission layer 1422 can reduce the second electrode 132 to The energy level difference between the light-emitting layers 141 makes it easier for electrons to be injected into the light-emitting layer 141 from the second electrode 132.

如圖3所示,在本實施例中,主動元件120包括第一導體層121、第一絕緣層122、通道層123、第二導體層124與第二絕緣層125。第一導體層121形成於基板110上且被圖案化而形成閘極G,且第一絕緣層 122形成於基板110與第一導體層121上。通道層123形成於第一絕緣層122上,且通道層123例如是以半導體材料製成。第二導體層124形成於通道層123上且被圖案化而形成源極S與汲極D,而第二絕緣層125形成於第一絕緣層122與第二導體層124上。第一電極131會穿過第二絕緣層125而連接對應的汲極D。 As shown in FIG. 3, in this embodiment, the active device 120 includes a first conductor layer 121, a first insulating layer 122, a channel layer 123, a second conductor layer 124 and a second insulating layer 125. The first conductor layer 121 is formed on the substrate 110 and patterned to form the gate G, and the first insulating layer 122 is formed on the substrate 110 and the first conductor layer 121. The channel layer 123 is formed on the first insulating layer 122, and the channel layer 123 is made of a semiconductor material, for example. The second conductor layer 124 is formed on the channel layer 123 and patterned to form the source electrode S and the drain electrode D, and the second insulating layer 125 is formed on the first insulating layer 122 and the second conductor layer 124. The first electrode 131 passes through the second insulating layer 125 and is connected to the corresponding drain D.

在本實施例中,各發光裝置100、100a的發光層141可分別為紅色發光層(REML)、綠色發光層(GEML)與藍色發光層(BEML)。具有紅色發光層的發光裝置100、100a可發出紅光,具有綠色發光層的發光裝置100、100a可發出綠光,而具有藍色發光層的發光裝置100、100a可發出藍光。 In this embodiment, the light-emitting layers 141 of the light-emitting devices 100 and 100a may be a red light-emitting layer (REML), a green light-emitting layer (GEML), and a blue light-emitting layer (BEML), respectively. The light emitting devices 100, 100a having a red light emitting layer can emit red light, the light emitting devices 100, 100a having a green light emitting layer can emit green light, and the light emitting devices 100, 100a having a blue light emitting layer can emit blue light.

請參照圖4與圖5,圖4為本發明第二實施例的發光裝置100、100a的剖面示意圖,圖5為本發明第三實施例的發光裝置100、100a的剖面示意圖。圖4與圖3的發光裝置100、100a的差異在於,圖4的發光裝置100的阻隔層160是位於第二傳輸層1422與發光層141之間。圖5與圖3的發光裝置100、100a的差異在於,圖5的發光裝置100的阻隔層160是位於第一傳輸層1421與第一電極131之間。圖4與圖5的發光裝置100同樣可藉由阻隔層160而使其有機層140位於非顯示區12的部分不發光。 Please refer to FIGS. 4 and 5. FIG. 4 is a schematic cross-sectional view of the light emitting devices 100 and 100 a according to the second embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of the light emitting devices 100 and 100 a according to the third embodiment of the present invention. The difference between the light emitting devices 100 and 100a of FIG. 4 and FIG. 3 is that the barrier layer 160 of the light emitting device 100 of FIG. 4 is located between the second transmission layer 1422 and the light emitting layer 141. The difference between the light-emitting devices 100 and 100 a of FIG. 5 and FIG. 3 is that the barrier layer 160 of the light-emitting device 100 of FIG. 5 is located between the first transmission layer 1421 and the first electrode 131. The light-emitting device 100 of FIGS. 4 and 5 can also use the barrier layer 160 so that the portion of the organic layer 140 located in the non-display area 12 does not emit light.

請參照圖6,圖6所示為本發明第四實施例的發光裝置100、100a的剖面示意圖。圖6與圖3的發光裝置100、100a的差異在於,圖6的各發光裝置100、100a的第一傳輸層1421包括電洞注入層(hole injection layer,HIL)HIL與電洞傳輸層HTL,且第二傳輸層1422包括電子注入層(electron injection layer,EIL)EIL與電子傳輸層ETL。如圖6所示,在 本實施例中,發光層141位於電洞傳輸層HTL與電子傳輸層ETL之間,電洞注入層HIL位於第一電極131與電洞傳輸層HTL之間,且電子注入層EIL位於第二電極132與電子傳輸層ETL之間。電洞注入層HIL與電洞傳輸層HTL可降低第一電極131至發光層141之間的能階差,使電洞更容易由第一電極131注入發光層141;而電子注入層EIL與電子傳輸層ETL可降低第二電極132至發光層141之間的能階差,使電子更容易由第二電極132注入發光層141。 Please refer to FIG. 6, which is a schematic cross-sectional view of a light emitting device 100, 100a according to a fourth embodiment of the present invention. The difference between the light-emitting devices 100 and 100a of FIG. 6 and FIG. 3 is that the first transmission layer 1421 of each light-emitting device 100 and 100a of FIG. 6 includes a hole injection layer (HIL) HIL and a hole transmission layer HTL. The second transport layer 1422 includes an electron injection layer (EIL) EIL and an electron transport layer ETL. As shown in Figure 6, in In this embodiment, the light emitting layer 141 is located between the hole transport layer HTL and the electron transport layer ETL, the hole injection layer HIL is located between the first electrode 131 and the hole transport layer HTL, and the electron injection layer EIL is located on the second electrode 132 and the electron transport layer ETL. The hole injection layer HIL and the hole transport layer HTL can reduce the energy level difference between the first electrode 131 and the light emitting layer 141, making it easier for holes to be injected into the light emitting layer 141 from the first electrode 131; and the electron injection layer EIL and electrons The transmission layer ETL can reduce the energy level difference between the second electrode 132 and the light-emitting layer 141, so that electrons are more easily injected into the light-emitting layer 141 from the second electrode 132.

請參照圖7,圖7為本發明第五實施例的發光裝置100、100a的剖面示意圖。圖7與圖3的發光裝置100a是相同的,而圖7與圖3的發光裝置100的差異在於,圖7的發光裝置100不具有阻隔層160,相反的,圖7的發光裝置100是藉由抽離有機層140位於非顯示區12的部分或減少有機層140位於非顯示區12的部分的厚度,以提高發光裝置100的有機層140位於非顯示區12的部分的能階差,藉此使發光裝置100的有機層140位於顯示區11的部分與非顯示區12的部分具有不同的能階差。在此情況下,當主動元件120施加特定電壓至發光裝置100的有機層140,發光裝置100的有機層140位於顯示區11的部分會發光,但位於非顯示區12的部分不發光。其結構與原理詳述如下。 Please refer to FIG. 7, which is a schematic cross-sectional view of a light emitting device 100, 100a according to a fifth embodiment of the present invention. The light emitting device 100a of FIG. 7 and FIG. 3 are the same, and the difference between the light emitting device 100 of FIG. 7 and FIG. 3 is that the light emitting device 100 of FIG. 7 does not have the barrier layer 160. On the contrary, the light emitting device 100 of FIG. By extracting the portion of the organic layer 140 located in the non-display area 12 or reducing the thickness of the portion of the organic layer 140 located in the non-display area 12, the energy level difference of the portion of the organic layer 140 of the light emitting device 100 located in the non-display area 12 is increased by This makes the portion of the organic layer 140 of the light-emitting device 100 located in the display area 11 and the portion of the non-display area 12 have different energy levels. In this case, when the active element 120 applies a specific voltage to the organic layer 140 of the light emitting device 100, the portion of the organic layer 140 of the light emitting device 100 located in the display area 11 emits light, but the portion located in the non-display area 12 does not emit light. Its structure and principle are detailed as follows.

如圖7所示,在本實施例中,各發光裝置100、100a包括第一電極131、第二電極132與有機層140,有機層140位於第一電極131與第二電極132之間。發光裝置100是位於顯示區11與非顯示區12的交界處,因此發光裝置100亦可對應區分為顯示區11與非顯示區12。並且,發光裝置100的有機層140於非顯示區12的厚度D1小於有機層140於顯示區11的 厚度D2。由於厚度不同,因此有機層140位於顯示區11的部分與非顯示區12的部分的能階差不同,而相應地,有機層140位於顯示區11的部分與非顯示區12的部分受到激發而發光所需要的電壓閾值也不相同。舉例來說,若一特定電壓是大於發光裝置100位於顯示區11的有機層140受到激發而發光所需要的電壓閾值,但是小於發光裝置100位於非顯示區12的有機層140受到激發而發光所需要的電壓閾值,在此情況下,當主動元件120施加所述特定電壓至發光裝置100的有機層140,可僅使發光裝置100的有機層140位於顯示區11的部分發光,但不會使有機層140位於非顯示區12的部分發光。因此,當圖7的發光裝置100是排列於顯示區11的邊緣,即顯示區11與非顯示區12交界處,發光裝置100同樣可對應於顯示區11邊緣的形狀而局部不會發光。當顯示區11顯示影像時,影像邊緣不會呈現鋸齒狀。 As shown in FIG. 7, in this embodiment, each light-emitting device 100, 100 a includes a first electrode 131, a second electrode 132 and an organic layer 140, and the organic layer 140 is located between the first electrode 131 and the second electrode 132. The light-emitting device 100 is located at the junction of the display area 11 and the non-display area 12, so the light-emitting device 100 can also be correspondingly divided into the display area 11 and the non-display area 12. Moreover, the thickness D1 of the organic layer 140 of the light-emitting device 100 in the non-display area 12 is smaller than that of the organic layer 140 in the display area 11 Thickness D2. Due to the different thicknesses, the difference in energy level between the portion of the organic layer 140 in the display area 11 and the portion of the non-display area 12 is different, and accordingly, the portion of the organic layer 140 in the display area 11 and the portion of the non-display area 12 are excited and The voltage threshold required for light emission is also different. For example, if a specific voltage is greater than the voltage threshold required for the organic layer 140 of the light-emitting device 100 located in the display area 11 to be excited and emit light, but less than the organic layer 140 of the light-emitting device 100 located in the non-display area 12 is excited to emit light The required voltage threshold. In this case, when the active device 120 applies the specific voltage to the organic layer 140 of the light-emitting device 100, only the portion of the organic layer 140 of the light-emitting device 100 located in the display area 11 emits light, but it does not cause The portion of the organic layer 140 located in the non-display area 12 emits light. Therefore, when the light-emitting device 100 of FIG. 7 is arranged at the edge of the display area 11, that is, at the boundary between the display area 11 and the non-display area 12, the light-emitting device 100 can also correspond to the shape of the edge of the display area 11 without partially emitting light. When the display area 11 displays an image, the edges of the image will not appear jagged.

如圖7所示,在本實施例中,各發光裝置100、100a的有機層140包括發光層141與輔助層142,且發光裝置100的輔助層142於非顯示區12的厚度小於輔助層142於顯示區11的厚度,相應地,發光裝置100的有機層140於非顯示區12的厚度D1亦會小於有機層140於顯示區11的厚度D2。如前所述,由於輔助層142可用以降低第一電極131/第二電極132至發光層141之間的能階差,讓電洞/電子可在相對較低的電壓下更容易由第一電極131/第二電極132注入發光層141,使發光層141發光。因而在輔助層142的厚度愈小的情況下,第一電極131/第二電極132至發光層141之間的能階差會愈大,相應地,電洞/電子需要在相對較高的電壓下才能由第一電極131/第二電極132注入發光層141。藉由輔助層142的厚度差異,當主動元件120施加特定電壓至發光裝置100的有機層140,可僅使發光裝置 100的發光層141位於顯示區11的部分發光,但不會使發光層141位於非顯示區12的部分發光。 As shown in FIG. 7, in this embodiment, the organic layer 140 of each light-emitting device 100, 100 a includes a light-emitting layer 141 and an auxiliary layer 142, and the thickness of the auxiliary layer 142 of the light-emitting device 100 in the non-display area 12 is smaller than the auxiliary layer 142 Due to the thickness of the display area 11, correspondingly, the thickness D1 of the organic layer 140 of the light-emitting device 100 in the non-display area 12 is also smaller than the thickness D2 of the organic layer 140 in the display area 11. As described above, since the auxiliary layer 142 can be used to reduce the energy level difference between the first electrode 131/second electrode 132 and the light-emitting layer 141, holes/electrons can be easily removed from the first electrode at a relatively low voltage. The electrode 131/second electrode 132 is injected into the light-emitting layer 141 to cause the light-emitting layer 141 to emit light. Therefore, the smaller the thickness of the auxiliary layer 142, the greater the energy level difference between the first electrode 131/second electrode 132 and the light emitting layer 141, and accordingly, the holes/electrons need to be at a relatively high voltage Only then can the first electrode 131 / the second electrode 132 be injected into the light emitting layer 141. Due to the difference in thickness of the auxiliary layer 142, when the active device 120 applies a specific voltage to the organic layer 140 of the light emitting device 100, only the light emitting device The portion of the light-emitting layer 141 in the display area 11 emits light, but the portion of the light-emitting layer 141 in the non-display area 12 does not emit light.

如圖7所示,在本實施例中,輔助層142包括第一傳輸層1421與第二傳輸層1422,且發光層141位於第一傳輸層1421與第二傳輸層1422之間。舉例來說,第一傳輸層1421可為電洞傳輸層HTL,而第二傳輸層1422可為電子傳輸層ETL,並且第一電極131為陽極,而第二電極132為陰極,但不限於此。第一傳輸層1421可降低第一電極131至發光層141之間的能階差,使電洞更容易由第一電極131注入發光層141;而第二傳輸層1422可降低第二電極132至發光層141之間的能階差,使電子更容易由第二電極132注入發光層141。在一些實施例中,發光裝置100的第一傳輸層1421與第二傳輸層1422的至少其中之一無延伸於非顯示區12,以提高發光裝置100的有機層140位於非顯示區12的部分的能階差。 As shown in FIG. 7, in this embodiment, the auxiliary layer 142 includes a first transmission layer 1421 and a second transmission layer 1422, and the light emitting layer 141 is located between the first transmission layer 1421 and the second transmission layer 1422. For example, the first transport layer 1421 may be a hole transport layer HTL, and the second transport layer 1422 may be an electron transport layer ETL, and the first electrode 131 is an anode, and the second electrode 132 is a cathode, but is not limited thereto . The first transmission layer 1421 can reduce the energy level difference between the first electrode 131 and the light-emitting layer 141, so that holes are more easily injected into the light-emitting layer 141 from the first electrode 131; and the second transmission layer 1422 can reduce the second electrode 132 to The energy level difference between the light-emitting layers 141 makes it easier for electrons to be injected into the light-emitting layer 141 from the second electrode 132. In some embodiments, at least one of the first transmission layer 1421 and the second transmission layer 1422 of the light-emitting device 100 does not extend beyond the non-display area 12 to improve the portion of the organic layer 140 of the light-emitting device 100 located in the non-display area 12 Energy level difference.

如圖7所示,在本實施例中,發光裝置100的第一傳輸層1421位於顯示區11與非顯示區12,但發光裝置100的第二傳輸層1422僅位於顯示區11而無延伸於非顯示區12。在此狀況下,相對於顯示區11,電子需要較大的電壓才能由第二電極132注入發光裝置100位於非顯示區12的發光層141。藉由發光裝置100的第二傳輸層1422只位於顯示區11而無延伸於非顯示區12,當主動元件120施加特定電壓至發光裝置100的有機層140,可僅使發光裝置100的發光層141位於顯示區11的部分發光,但不會使發光層141位於非顯示區12的部分發光。 As shown in FIG. 7, in this embodiment, the first transmission layer 1421 of the light-emitting device 100 is located in the display area 11 and the non-display area 12, but the second transmission layer 1422 of the light-emitting device 100 is only located in the display area 11 without extending Non-display area 12. In this situation, compared with the display area 11, electrons require a larger voltage to be injected into the light emitting layer 141 of the light emitting device 100 in the non-display area 12 from the second electrode 132. Since the second transmission layer 1422 of the light emitting device 100 is only located in the display area 11 and does not extend to the non-display area 12, when the active device 120 applies a specific voltage to the organic layer 140 of the light emitting device 100, only the light emitting layer of the light emitting device 100 The portion of 141 located in the display area 11 emits light, but the portion of the light-emitting layer 141 located in the non-display area 12 does not emit light.

請參照圖8,圖8為本發明第六實施例的發光裝置100、100a的剖面示意圖。圖8與圖7的發光裝置100、100a的差異在於,圖8的發光 裝置100的第二傳輸層1422位於顯示區11與非顯示區12,但發光裝置100的第一傳輸層1421僅位於顯示區11而無延伸於非顯示區12。圖8的發光裝置100同樣可藉發光裝置100的第一傳輸層1421只位於顯示區11而無延伸於非顯示區12而使其發光層141位於非顯示區12的部分不發光。在一些實施例中,發光裝置100的第一傳輸層1421與第二傳輸層1422可皆僅位於顯示區11而皆無延伸於非顯示區12。 Please refer to FIG. 8. FIG. 8 is a schematic cross-sectional view of a light emitting device 100, 100a according to a sixth embodiment of the present invention. The difference between the light-emitting devices 100 and 100a of FIG. 8 and FIG. 7 is that the light emission of FIG. 8 The second transmission layer 1422 of the device 100 is located in the display area 11 and the non-display area 12, but the first transmission layer 1421 of the light emitting device 100 is only located in the display area 11 and does not extend beyond the non-display area 12. The light-emitting device 100 of FIG. 8 can also use the first transmission layer 1421 of the light-emitting device 100 to be located only in the display area 11 without extending to the non-display area 12 so that the portion of the light-emitting layer 141 located in the non-display area 12 does not emit light. In some embodiments, the first transmission layer 1421 and the second transmission layer 1422 of the light-emitting device 100 may both be located only in the display area 11 and neither extend beyond the non-display area 12.

請參照圖9,圖9所示為本發明第七實施例的發光裝置100、100a的剖面示意圖。圖9與圖7的發光裝置100、100a的差異在於,圖9的各發光裝置100、100a的第一傳輸層1421包括電洞注入層HIL與電洞傳輸層HTL,且第二傳輸層1422包括電子注入層EIL與電子傳輸層ETL。如圖9所示,在本實施例中,發光層141位於電洞傳輸層HTL與電子傳輸層ETL之間,電洞注入層HIL位於第一電極131與電洞傳輸層HTL之間,且電子注入層EIL位於第二電極132與電子傳輸層ETL之間。電洞注入層HIL與電洞傳輸層HTL可降低第一電極131至發光層141之間的能階差,使電洞更容易由第一電極131注入發光層141;而電子注入層EIL與電子傳輸層ETL可降低第二電極132至發光層141之間的能階差,使電子更容易由第二電極132注入發光層141。 Please refer to FIG. 9, which is a schematic cross-sectional view of a light emitting device 100, 100a according to a seventh embodiment of the present invention. The difference between the light-emitting devices 100, 100a of FIG. 9 and FIG. 7 is that the first transmission layer 1421 of each light-emitting device 100, 100a of FIG. 9 includes a hole injection layer HIL and a hole transmission layer HTL, and the second transmission layer 1422 includes The electron injection layer EIL and the electron transport layer ETL. As shown in FIG. 9, in this embodiment, the light emitting layer 141 is located between the hole transport layer HTL and the electron transport layer ETL, the hole injection layer HIL is located between the first electrode 131 and the hole transport layer HTL, and the electrons The injection layer EIL is located between the second electrode 132 and the electron transport layer ETL. The hole injection layer HIL and the hole transport layer HTL can reduce the energy level difference between the first electrode 131 and the light emitting layer 141, making it easier for holes to be injected into the light emitting layer 141 from the first electrode 131; and the electron injection layer EIL and electrons The transmission layer ETL can reduce the energy level difference between the second electrode 132 and the light-emitting layer 141, so that electrons are more easily injected into the light-emitting layer 141 from the second electrode 132.

如圖9所示,在本實施例中,發光裝置100的第一傳輸層1421於顯示區11與非顯示區12的厚度相同,但發光裝置100的第二傳輸層1422於非顯示區12的厚度D1小於第二傳輸層1422於顯示區11的厚度D2。藉此,當主動元件120施加特定電壓至發光裝置100的有機層140,可僅使發光裝置100的發光層141位於顯示區11的部分發光,但不會使發光層141位 於非顯示區12的部分發光。在一些實施例中,發光裝置100的第二傳輸層1422於顯示區11與非顯示區12的厚度相同,但發光裝置100的第一傳輸層1421於非顯示區12的厚度小於第一傳輸層1421於顯示區11的厚度。在一些實施例中,發光裝置100的第一傳輸層1421與第二傳輸層1422於非顯示區12的厚度皆小於第一傳輸層1421與第二傳輸層1422於顯示區11的厚度。在一些實施例中,發光裝置100的電洞注入層HIL、電洞傳輸層HTL、電子注入層EIL與電子傳輸層ETL的至少其中之一沒有位於非顯示區12。 As shown in FIG. 9, in this embodiment, the first transmission layer 1421 of the light-emitting device 100 has the same thickness in the display area 11 and the non-display area 12, but the second transmission layer 1422 of the light-emitting device 100 is in the non-display area 12 The thickness D1 is smaller than the thickness D2 of the second transmission layer 1422 in the display area 11. In this way, when the active device 120 applies a specific voltage to the organic layer 140 of the light-emitting device 100, only the light-emitting layer 141 of the light-emitting device 100 located in the display area 11 emits light, but does not cause the light-emitting layer 141 to emit light The non-display area 12 emits light. In some embodiments, the thickness of the second transmission layer 1422 of the light-emitting device 100 in the display area 11 and the non-display area 12 is the same, but the thickness of the first transmission layer 1421 of the light-emitting device 100 in the non-display area 12 is smaller than that of the first transmission layer 1421 is the thickness of the display area 11. In some embodiments, the thickness of the first transmission layer 1421 and the second transmission layer 1422 in the non-display area 12 of the light emitting device 100 are both smaller than the thickness of the first transmission layer 1421 and the second transmission layer 1422 in the display area 11. In some embodiments, at least one of the hole injection layer HIL, the hole transport layer HTL, the electron injection layer EIL, and the electron transport layer ETL of the light emitting device 100 is not located in the non-display area 12.

如圖9所示,在本實施例中,發光裝置100的電洞注入層HIL、電洞傳輸層HTL與電子傳輸層ETL位於顯示區11與非顯示區12,而發光裝置100的電子注入層EIL僅位於顯示區11而沒有位於非顯示區12,相應地,發光裝置100的第二傳輸層1422於非顯示區12的厚度D1會小於第二傳輸層1422於顯示區11的厚度D2。在一些實施例中,發光裝置100的電子傳輸層ETL可僅位於顯示區11而沒有位於非顯示區12。在一些實施例中,發光裝置100的電洞傳輸層HTL可僅位於顯示區11而沒有位於非顯示區12。在一些實施例中,發光裝置100的電洞注入層HIL可僅位於顯示區11而沒有位於非顯示區12。在一些實施例中,發光裝置100的電洞注入層HIL、電洞傳輸層HTL、電子注入層EIL與電子傳輸層ETL等四層中僅有其中一層是同時位於顯示區11與非顯示區12,而其他三層皆僅位於顯示區11且沒有位於非顯示區12。在一些實施例中,發光裝置100的電洞注入層HIL、電洞傳輸層HTL、電子注入層EIL與電子傳輸層ETL等四層皆僅位於顯示區11且沒有位於非顯示區12。 As shown in FIG. 9, in this embodiment, the hole injection layer HIL, the hole transport layer HTL and the electron transport layer ETL of the light emitting device 100 are located in the display area 11 and the non-display area 12, and the electron injection layer of the light emitting device 100 The EIL is only located in the display area 11 but not in the non-display area 12. Accordingly, the thickness D1 of the second transmission layer 1422 of the light-emitting device 100 in the non-display area 12 is smaller than the thickness D2 of the second transmission layer 1422 in the display area 11. In some embodiments, the electron transport layer ETL of the light emitting device 100 may be located only in the display area 11 and not in the non-display area 12. In some embodiments, the hole transport layer HTL of the light emitting device 100 may be located only in the display area 11 and not in the non-display area 12. In some embodiments, the hole injection layer HIL of the light emitting device 100 may be located only in the display area 11 and not in the non-display area 12. In some embodiments, only one of the four layers of the hole injection layer HIL, the hole transport layer HTL, the electron injection layer EIL, and the electron transport layer ETL of the light emitting device 100 is located in the display area 11 and the non-display area 12 at the same time The other three layers are only located in the display area 11 and not in the non-display area 12. In some embodiments, the four layers of the hole injection layer HIL, the hole transport layer HTL, the electron injection layer EIL, and the electron transport layer ETL of the light emitting device 100 are only located in the display area 11 and not in the non-display area 12.

請參照圖10至圖12,圖10為本發明一實施例的顯示面板10 蒸鍍製程的頂視示意圖,圖11為圖10的顯示面板10的局部剖面示意圖一,圖12為圖10的顯示面板10的局部剖面示意圖二。圖10至圖12是用以說明圖3的阻隔層160的形成方式。在顯示面板10完成第二傳輸層1422的製備之後與進行第二電極132的製備之前,會進行阻隔層160的蒸鍍製程。如圖10與圖11所示,在此製程中,會以遮罩MA覆蓋顯示區11,而非顯示區12則暴露在遮罩MA之外。接著,如圖12所示,以蒸鍍方式(參照圖中箭號)將絕緣材料蒸鍍至顯示面板10,使阻隔層160、160a形成在遮罩MA上與非顯示區12的第二傳輸層1422上。並且將遮罩MA連同其上的阻隔層160a移除後,只會留下位於非顯示區12的第二傳輸層1422上的阻隔層160。接著再進行第二電極132的製備,即可形成如圖3所示的顯示面板10。 Please refer to FIGS. 10 to 12. FIG. 10 is a display panel 10 according to an embodiment of the invention. A schematic top view of the evaporation process. FIG. 11 is a schematic partial cross-sectional diagram 1 of the display panel 10 of FIG. 10, and FIG. 12 is a schematic partial cross-sectional diagram 2 of the display panel 10 of FIG. 10. 10 to 12 are used to explain the formation of the barrier layer 160 of FIG. 3. After the display panel 10 completes the preparation of the second transmission layer 1422 and before the preparation of the second electrode 132, a vapor deposition process of the barrier layer 160 is performed. As shown in FIGS. 10 and 11, in this process, the display area 11 is covered with the mask MA, and the non-display area 12 is exposed outside the mask MA. Next, as shown in FIG. 12, an insulating material is vapor-deposited to the display panel 10 by a vapor deposition method (refer to arrows in the figure), so that the barrier layers 160 and 160 a are formed on the mask MA and the second transmission between the non-display area 12 On layer 1422. After removing the mask MA and the barrier layer 160a thereon, only the barrier layer 160 on the second transmission layer 1422 of the non-display area 12 will be left. Then, the second electrode 132 is prepared, and the display panel 10 shown in FIG. 3 can be formed.

在一些實施例中,若阻隔層160是位於發光層141與第二傳輸層1422之間(如圖4所示),則可在顯示面板10完成發光層141的製備之後與進行第二傳輸層1422的製備之前,進行上述阻隔層160的蒸鍍製程。在一些實施例中,若阻隔層160是位於第一電極131與第一傳輸層1421之間(如圖5所示),則可在顯示面板10完成第一電極131的製備之後與進行第一傳輸層1421的製備之前,進行上述阻隔層160的蒸鍍製程。 In some embodiments, if the barrier layer 160 is located between the light-emitting layer 141 and the second transmission layer 1422 (as shown in FIG. 4 ), the second transmission layer may be performed after the display panel 10 completes the preparation of the light-emitting layer 141 Before the preparation of 1422, the evaporation process of the above-mentioned barrier layer 160 is performed. In some embodiments, if the barrier layer 160 is located between the first electrode 131 and the first transmission layer 1421 (as shown in FIG. 5 ), the first electrode 131 can be prepared after the display panel 10 is completed Before the preparation of the transmission layer 1421, the above-mentioned vapor deposition process of the barrier layer 160 is performed.

請參照圖13至圖15,圖13為本發明另一實施例的顯示面板10蒸鍍製程的頂視示意圖,圖14為圖13的顯示面板10的局部剖面示意圖一,圖15為圖13的顯示面板10的局部剖面示意圖二。圖13至圖15是用以說明圖7的第二傳輸層1422的形成方式。如圖13與圖14所示,在顯示面板10完成發光層141的製備之後,會以遮罩MA覆蓋非顯示區12,而顯示區11 則暴露在遮罩MA之外。接著,如圖15所示,以蒸鍍方式(參照圖中箭號)將第二傳輸層1422蒸鍍至顯示面板10,使第二傳輸層1422、1422a形成在遮罩MA上與顯示區11的發光層141上。並且將遮罩MA與其上的第二傳輸層1422a移除後,只會留下位於顯示區11的發光層141上的第二傳輸層1422上。此外,透過曝光、蝕刻與沈積等現有製程,可在第一傳輸層1421、發光層141與第二傳輸層1422之間形成像素定義層150,以定義各像素,於此不再贅述。接著再進行第二電極132的製備,即可形成如圖7所示的顯示面板10。 Please refer to FIGS. 13 to 15. FIG. 13 is a schematic top view of a vapor deposition process of a display panel 10 according to another embodiment of the present invention. FIG. 14 is a partial cross-sectional schematic diagram 1 of the display panel 10 of FIG. 13. A second schematic partial cross-sectional view of the display panel 10. 13 to 15 are used to explain the formation of the second transmission layer 1422 of FIG. 7. As shown in FIGS. 13 and 14, after the display panel 10 completes the preparation of the light-emitting layer 141, the non-display area 12 is covered with the mask MA, and the display area 11 It is exposed outside the mask MA. Next, as shown in FIG. 15, the second transfer layer 1422 is vapor-deposited to the display panel 10 by vapor deposition (see arrows in the figure), so that the second transfer layers 1422 and 1422 a are formed on the mask MA and the display area 11 On the light emitting layer 141. After removing the mask MA and the second transmission layer 1422a thereon, only the second transmission layer 1422 on the light-emitting layer 141 of the display area 11 will remain. In addition, through existing processes such as exposure, etching, and deposition, a pixel definition layer 150 can be formed between the first transmission layer 1421, the light-emitting layer 141, and the second transmission layer 1422 to define each pixel, which will not be repeated here. Then, the second electrode 132 is prepared to form the display panel 10 shown in FIG. 7.

在一些實施例中,若第一傳輸層1421是僅位於顯示區11而沒有位於非顯示區12(如圖8所示),則可在顯示面板10完成第一電極131的製備之後,以遮罩MA覆蓋非顯示區12,並進行上述蒸鍍製程來形成第一傳輸層1421。 In some embodiments, if the first transmission layer 1421 is located only in the display area 11 and not in the non-display area 12 (as shown in FIG. 8 ), the display panel 10 may be masked after the preparation of the first electrode 131 is completed The cover MA covers the non-display area 12 and performs the above-mentioned evaporation process to form the first transmission layer 1421.

綜上所述,根據本發明各實施例的發光裝置,其可設置於顯示面板的顯示區邊緣,藉由位於非顯示區的阻隔層或藉由有機層於非顯示區的厚度小於有機層於顯示區的厚度的設計,使排列於顯示區邊緣的發光裝置可局部發光且局部不發光,而發光裝置的發光與不發光的交界處可對應於顯示區邊緣的形狀,從而避免顯示區所呈現的影像邊緣呈現鋸齒狀,並改善使用者的使用體驗。 In summary, according to various embodiments of the present invention, the light-emitting device can be disposed at the edge of the display area of the display panel, and the thickness of the non-display area by the barrier layer at the non-display area or by the organic layer is less than that of the organic layer at The thickness of the display area is designed so that the light-emitting devices arranged at the edge of the display area can partially emit light and not partially emit light, and the boundary between the light-emitting device and the non-light-emitting device can correspond to the shape of the edge of the display area, thereby avoiding the display area The edges of the image appear jagged and improve the user experience.

雖然本發明的技術內容已經以較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此技術者,在不脫離本發明之精神所作些許之更動與潤飾,皆應涵蓋於本發明的範疇內,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the technical content of the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone who is familiar with this technology and makes some changes and retouching without departing from the spirit of the present invention should cover the present invention. The scope of protection of the present invention shall be subject to the scope of the attached patent application.

10:顯示面板 10: Display panel

11:顯示區 11: Display area

12:非顯示區 12: Non-display area

100、100a:發光裝置 100, 100a: light-emitting device

110:基板 110: substrate

120:主動元件 120: Active components

121:第一導體層 121: first conductor layer

122:第一絕緣層 122: the first insulating layer

123:通道層 123: channel layer

124:第二導體層 124: second conductor layer

125:第二絕緣層 125: second insulating layer

131:第一電極 131: First electrode

132:第二電極 132: Second electrode

140:有機層 140: Organic layer

141:發光層 141: Luminous layer

142:輔助層 142: Auxiliary layer

1421:第一傳輸層 1421: The first transport layer

1422:第二傳輸層 1422: Second transport layer

150:像素定義層 150: pixel definition layer

160:阻隔層 160: barrier layer

D:汲極 D: Jiji

G:閘極 G: gate

ND:法線方向 ND: normal direction

S:源極 S: source

Claims (5)

一種發光裝置,包括:一第一電極與一第二電極;以及一有機層,位於該第一電極與該第二電極之間,其中該發光裝置區分為一顯示區與一非顯示區,且該有機層於該非顯示區的厚度小於該有機層於該顯示區的厚度。 A light-emitting device includes: a first electrode and a second electrode; and an organic layer between the first electrode and the second electrode, wherein the light-emitting device is divided into a display area and a non-display area, and The thickness of the organic layer in the non-display area is smaller than the thickness of the organic layer in the display area. 如請求項1所述的發光裝置,其中該有機層包括一發光層與一輔助層,且該輔助層於該非顯示區的厚度小於該輔助層於該顯示區的厚度。 The light-emitting device according to claim 1, wherein the organic layer includes a light-emitting layer and an auxiliary layer, and the thickness of the auxiliary layer in the non-display area is smaller than the thickness of the auxiliary layer in the display area. 如請求項1所述的發光裝置,其中該輔助層包括一第一傳輸層與一第二傳輸層,該發光層位於該第一傳輸層與該第二傳輸層之間,且該第一傳輸層於該非顯示區的厚度小於該第一傳輸層於該顯示區的厚度或該第二傳輸層於該非顯示區的厚度小於該第二傳輸層於該顯示區的厚度。 The light-emitting device according to claim 1, wherein the auxiliary layer includes a first transmission layer and a second transmission layer, the light-emitting layer is located between the first transmission layer and the second transmission layer, and the first transmission The thickness of the layer in the non-display area is less than the thickness of the first transmission layer in the display area or the thickness of the second transmission layer in the non-display area is less than the thickness of the second transmission layer in the display area. 如請求項3所述的發光裝置,其中該第一傳輸層包括一電洞注入層與一電洞傳輸層,該第二傳輸層包括一電子注入層與一電子傳輸層,該發光層位於該電洞傳輸層與該電子傳輸層之間,該電洞注入層位於該第一電極與該電洞傳輸層之間,且該電子注入層位於該第二電極與該電子傳輸層之間,其中該電洞注入層、該電洞傳輸層、該電子注入層與該電子傳輸層的至少其中之一沒有位於該非顯示區。 The light emitting device according to claim 3, wherein the first transport layer includes a hole injection layer and a hole transport layer, the second transport layer includes an electron injection layer and an electron transport layer, and the light emitting layer is located at the Between the hole transport layer and the electron transport layer, the hole injection layer is located between the first electrode and the hole transport layer, and the electron injection layer is located between the second electrode and the electron transport layer, wherein At least one of the hole injection layer, the hole transport layer, the electron injection layer and the electron transport layer is not located in the non-display area. 如請求項2所述的發光裝置,其中該輔助層包括一第一傳輸層與一第二傳輸層,且該發光層位於該第一傳輸層與該第二傳輸層之間,其中該第一傳輸層與該第二傳輸層的至少其中之一無延伸於該非顯示區。 The light-emitting device according to claim 2, wherein the auxiliary layer includes a first transmission layer and a second transmission layer, and the light-emitting layer is located between the first transmission layer and the second transmission layer, wherein the first At least one of the transmission layer and the second transmission layer does not extend to the non-display area.
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