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WO2013168442A1 - Light source-integrated optical sensor and method for manufacturing light source-integrated optical sensor - Google Patents

Light source-integrated optical sensor and method for manufacturing light source-integrated optical sensor Download PDF

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Publication number
WO2013168442A1
WO2013168442A1 PCT/JP2013/052603 JP2013052603W WO2013168442A1 WO 2013168442 A1 WO2013168442 A1 WO 2013168442A1 JP 2013052603 W JP2013052603 W JP 2013052603W WO 2013168442 A1 WO2013168442 A1 WO 2013168442A1
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WO
WIPO (PCT)
Prior art keywords
light
source integrated
light source
light emitting
light receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/052603
Other languages
French (fr)
Japanese (ja)
Inventor
伸一 眞▲崎▼
井上　修二
崇裕 戎井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aoi Electronics Co Ltd
Original Assignee
Aoi Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2012105941A external-priority patent/JP5847644B2/en
Priority claimed from JP2013000564A external-priority patent/JP5855590B2/en
Application filed by Aoi Electronics Co Ltd filed Critical Aoi Electronics Co Ltd
Priority to CN201380023774.XA priority Critical patent/CN104272474B/en
Priority to KR1020147030236A priority patent/KR101659677B1/en
Priority to TW102115865A priority patent/TWI581448B/en
Publication of WO2013168442A1 publication Critical patent/WO2013168442A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
    • G01V8/00—Prospecting or detecting by optical means
    • G01V8/10—Detecting, e.g. by using light barriers
    • G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
    • H10W72/01515—
    • H10W72/075—
    • H10W72/884—
    • H10W74/00—
    • H10W90/734—
    • H10W90/754—

Definitions

  • the present invention relates to a light source integrated light sensor and a method of manufacturing the same.
  • the light source integrated light sensor includes a light receiving unit provided in a predetermined area on the substrate, a light emitting unit provided in an area different from the light receiving unit on the substrate, and a light receiving unit.
  • a first light transmitting member provided to cover the light receiving portion, and a second light transmitting member provided via the first light transmitting member and the space, and covering the light emitting portion on the light emitting portion And a light shielding member formed in a part of the space.
  • the light blocking member is preferably made of a heat insulating material.
  • the light blocking member is desirably made of a heat conductive material.
  • the heat conductive material is preferably located on a through hole provided in the substrate.
  • at least the first light transmitting member is preferably made of resin.
  • a method of manufacturing a light source integrated optical sensor includes the steps of: providing a light receiving unit and a light emitting unit in a predetermined area on a substrate; and providing a mask member between the light receiving unit and the light emitting unit.
  • a step of forming a light shielding member on a region other than the light receiving portion and the light emitting portion, a step of forming a light transmitting member on the light receiving portion, the light emitting portion and a region of the light shielding member, and a step of removing the mask member And in the order of the above steps.
  • a method of manufacturing a light source integrated optical sensor includes the steps of: providing a light receiving portion and a light emitting portion in a predetermined area on a substrate; and transmitting light through the light receiving portion and the light emitting portion. And forming the light shielding member higher than the light transmitting member on the regions other than the light receiving portion and the light emitting portion.
  • a method of manufacturing a light source integrated optical sensor includes the steps of: providing a light receiving unit and a light emitting unit in a predetermined area on a substrate; The forming step and the step of forming the light transmitting member lower than the light shielding member on the light receiving portion and the light emitting portion are performed in the order of the above steps.
  • a method of manufacturing a light source integrated optical sensor includes the steps of: providing a light receiving unit and a light emitting unit in a predetermined area on a substrate; The forming step, the step of forming the light transmitting member on the inner and outer regions of the light shielding member, and the above steps are performed in this order.
  • a method of manufacturing a light source integrated photosensor includes the steps of: providing a light receiving portion and a light emitting portion in a predetermined region on a substrate; and providing a glass member on the region of the light receiving portion.
  • the step of forming the light shielding member higher than the light emitting portion on the region other than the glass member and the light emitting portion, and the step of forming the light transmitting member on the regions of the light emitting portion and the light shielding member are performed in the order of the above steps.
  • the characteristic deterioration due to the heat from the light emitting unit can be suppressed.
  • FIG. 1 is a cross-sectional view of a light source integrated light sensor according to a first embodiment of the present invention.
  • FIG. 2A, FIG. 2B, FIG. 2C, and FIG. 2D are diagrams for explaining a method of manufacturing the light source integrated optical sensor.
  • FIG. 3 is a cross-sectional view of the light source integrated light sensor according to the first modification.
  • FIG. 4 is a cross-sectional view of a light source integrated light sensor according to a second modification.
  • FIG. 5 is a cross-sectional view of the light source integrated light sensor according to the third modification.
  • FIG. 6 is a cross-sectional view of a light source integrated light sensor according to a fourth modification.
  • FIG. 7 is a cross-sectional view of the light source integrated light sensor according to the eighth modification.
  • FIG. 8A, FIG. 8B, and FIG. 8C are diagrams for explaining a method of manufacturing the light source integrated light sensor.
  • FIG. 9 is a cross-sectional view of the light source integrated light sensor according to the second embodiment.
  • FIG. 10A, FIG. 10B, and FIG. 10C are diagrams for explaining the manufacturing procedure of the light source integrated light sensor.
  • FIG. 11 is a cross-sectional view of the light source integrated light sensor according to the third embodiment.
  • FIG. 12 is a diagram for explaining the manufacturing procedure of the light source integrated light sensor.
  • FIG. 13 is a cross-sectional view of a light source integrated light sensor according to a fourth embodiment.
  • FIG. 14 is a diagram for explaining the manufacturing procedure of the light source integrated light sensor.
  • FIG. 9 is a cross-sectional view of the light source integrated light sensor according to the second embodiment.
  • FIG. 10A, FIG. 10B, and FIG. 10C are diagrams for explaining the manufacturing procedure of the light source integrated light sensor.
  • FIG. 11 is
  • FIG. 15 is a diagram for explaining the manufacturing procedure of the light source integrated light sensor according to the ninth modification.
  • FIG. 16 is a cross-sectional view of the light source integrated light sensor according to the fifth embodiment.
  • FIG. 17 is a view for explaining the manufacturing procedure of the light source integrated light sensor.
  • FIG. 18 is a view for explaining the manufacturing procedure of the light source integrated light sensor.
  • FIG. 19 is a flowchart showing a manufacturing procedure of the light source integrated sensor according to the second embodiment.
  • FIG. 20 is a flowchart showing a manufacturing procedure of the light source integrated sensor according to the fourth embodiment.
  • FIG. 21 is a flowchart showing the manufacturing procedure of the light source integrated sensor according to the ninth modification.
  • FIG. 22 is a flowchart showing a manufacturing procedure of the light source integrated sensor according to the third embodiment.
  • FIG. 23 is a flowchart showing the manufacturing procedure of the light source integrated sensor according to the fifth embodiment.
  • FIG. 1 is a cross-sectional view of a light source integrated light sensor 1 according to a first embodiment of the present invention.
  • the light source integrated optical sensor 1 is an integrated light emitting element and light receiving element. For example, whether light emitted from the light emitting element is reflected by the external object and the reflected light is received by the light receiving element It is used, for example, for determining the presence or absence of an external object based on heel.
  • a light receiving chip (PDIC) 20 having a light receiving element (photodiode) and a peripheral circuit is provided on the upper surface of a substrate 10 made of an organic material, ceramic, lead frame or the like.
  • the light receiving chip 20 is connected to the patterns 11 and 12 on the substrate 10 by bonding wires 21 and 22.
  • a light emitting chip 30 formed of a light emitting element is provided on the upper surface of the substrate 10.
  • the light emitting chip 30 is, for example, a light emitting diode (LED), and one of the anode electrode and the cathode electrode of the light emitting chip 30 is formed on the lower surface of the substrate 10 through the through hole 15 made of metal. It is connected with 14.
  • the other electrode of the light emitting chip 30 is connected to a pattern (not shown) on the substrate 10 by a bonding wire 31.
  • a space 60 is provided between the light receiving chip 20 and the light emitting chip 30.
  • An opaque resin 51A is provided on the light receiving chip 20 side with the space 60 interposed therebetween, and an opaque resin 51B is provided on the light emitting chip 30 side.
  • the height of the opaque resin 51B at least the light emitted from the light emitting chip 30 to the light receiving chip 20 is shielded, and a height at which the light receiving chip 20 does not receive direct light from the light emitting chip 30 is secured.
  • the height of the opaque resin 51A is substantially the same as the height of the opaque resin 51B.
  • the opaque resin 51 ⁇ / b> A is provided such that the light receiving chip 20 does not receive external light that has entered the space 60.
  • a transparent resin 41A is provided on the light receiving chip 20 side of the opaque resin 51A so as to cover the light receiving chip 20 and the bonding wires 21 and 22. Further, on the light emitting chip 30 side of the opaque resin 51B, a transparent resin 41B is provided so as to cover the light emitting chip 30 and the bonding wire 31.
  • the patterns 11 and 12 on the substrate 10 are connected to the other formed through holes similar to the through holes 15 or the pattern 13 formed on the lower surface of the substrate 10 through a through via (not shown).
  • the manufacturing method of the light source integrated type optical sensor 1 mentioned above is demonstrated with reference to FIG.
  • the light receiving chip 20 is die-mounted at a predetermined position on the upper surface of the circuit board 10 on which a pattern is formed.
  • the light emitting chip 30 is die-mounted on the pattern connected to the through hole 15.
  • the plurality of electrodes of the light receiving chip 20 and the patterns 11 and 12 and other patterns of the substrate 10 are bonded by bonding wires 21 and 22 and bonding wires (not shown), respectively.
  • the upper electrode of the light emitting chip 30 and the predetermined pattern of the substrate 10 are bonded by bonding wires 31.
  • the light receiving chip 20 and the bonding wires 21 and 22, and the light emitting chip 30 and the bonding wire 31 are respectively sealed with a transparent resin 41 so as to cover them.
  • a dicing process is performed between the light receiving chip 20 and the light emitting chip 30 to cut part of the transparent resin 41 until it reaches the surface of the substrate 10. Thereby, the transparent resin 41 is separated into the transparent resins 41A and 41B. The depth of cutting may be deeper than the surface of the substrate 10.
  • the opaque resin 51 is filled between the transparent resins 41A and 41B.
  • a heat insulating material having a low thermal conductivity is used as the opaque resin 51.
  • dicing processing is performed to cut a part of the filled opaque resin 51 until it reaches the surface of the substrate 10. Thereby, the opaque resin 51 is separated into the opaque resins 51A and 51B, and the light source integrated optical sensor 1 illustrated in FIG. 1 is obtained.
  • the light source integrated optical sensor 1 includes a light receiving chip 20 provided in a predetermined area on the substrate 10, a light emitting chip 30 provided in a region different from the light receiving chip 20 on the substrate 10, and the light receiving chip 20.
  • a transparent resin 41A provided to cover the light receiving chip 20, a transparent resin 41B provided via the transparent resin 41A and the space 60, and provided on the light emitting chip 30 to cover the light emitting chip 30, and a space Since the opaque resin 51A, 51B formed on a part of the light source 60 is provided, the influence of the heat from the light emitting chip 30 can be suppressed.
  • the surface of the transparent resin 41A covering the light receiving chip 20 is prevented from being deformed by heat or the transparent resin 41A is discolored, the deterioration of the light receiving characteristic can be suppressed.
  • the light receiving chip 20 does not receive the direct light from the light emitting chip 30 and the external light incident to the space 60 between the transparent resin 41A and the transparent resin 41B is also not received, the unnecessary light Can be eliminated.
  • the opaque resins 51A and 51B are made of a heat insulating material, the heat conduction from the light emitting chip 30 to the transparent resin 41A covering the light receiving chip 20 is relaxed. . Thereby, the influence of the heat from the light emitting chip 30 (the deterioration of the light receiving characteristic) can be suppressed.
  • FIG. 3 is a cross-sectional view of the light source integrated light sensor 1B according to the first modification.
  • the light source integrated light sensor 1B according to FIG. 3 is different from the light source integrated light sensor 1 described above in that the opaque resin 51 is provided only on the light receiving chip 20 side of the space 60.
  • the opaque resin 51 remains only on the light receiving chip 20 side of the space 60, and the opaque resin does not remain on the light emitting chip 30 side of the space 60.
  • the cutting depth may be deeper than the surface of the substrate 10.
  • the heat conduction from the light emitting chip 30 to the light receiving chip 20 is alleviated by providing the space 60, so the surface of the transparent resin 41A covering the light receiving chip 20 is deformed by heat. It is possible to prevent the transparent resin 41A from being discolored.
  • FIG. 4 is a cross-sectional view of a light source integrated light sensor 1C according to a second modification.
  • the light source integrated photo sensor 1C according to FIG. 4 is different from the light source integrated photo sensor 1 described above in that a light shielding film 51C is formed on the side surface of the transparent resin 41A facing the space 60.
  • a predetermined metal material is sputter-deposited on the right side surface (space side) of the transparent resin 41A illustrated in FIG. 2C to form the light shielding film 51C.
  • FIG. 5 is a cross-sectional view of a light source integrated light sensor 1D according to a third modification.
  • the light source integrated optical sensor 1D according to FIG. 5 is provided with a material having a high thermal conductivity, such as a metal plate 70, in the space 60 as compared with the light source integrated optical sensor 1 of FIG. The difference is that the through hole 16 is formed in accordance with the position immediately below.
  • the substrate 10B having the through hole 16 additionally formed in the substrate 10 is subjected to the same processing as the light source integrated optical sensor 1, and then the true of the through hole 16 is obtained.
  • a metal plate 70 which is a heat conductive material is provided on the top. The heat transferred from the light emitting chip 30 to the metal plate 70 can be dissipated from the lower surface side pattern 17 of the substrate 10B through the through holes 16.
  • a filler may be applied between the metal plate 70 and the opaque resin 51B in order to facilitate absorption of the heat on the light emitting chip 30 side to the metal plate 70 to fill the gap.
  • a gap may be provided between the metal plate 70 and the opaque resin 51A in order to avoid heat conduction between the two. Since the metal plate 70 is located on the through hole 16, when the heat on the light emitting chip 30 is transferred to the metal plate 70, the heat can be efficiently dissipated to the lower side of the substrate 10 through the through hole 16.
  • the heat conduction from the light emitting chip 30 to the light receiving chip 20 is alleviated, so the surface of the transparent resin 41A covering the light receiving chip 20. Can be prevented from being deformed by heat or discolored the transparent resin 41A.
  • FIG. 6 is a cross-sectional view of a light source integrated light sensor 1E according to a fourth modification.
  • the light source integrated light sensor 1E according to FIG. 6 is provided with a material having a high thermal conductivity, for example, a metal plate 70, in the space 60 as compared to the light source integrated light sensor 1B of FIG. The difference is that the through hole 16 is formed in accordance with the position immediately below.
  • the substrate 10B having the through hole 16 additionally formed in the substrate 10 is subjected to the same processing as the light source integrated optical sensor 1B, and then the true of the through hole 16 is obtained.
  • a metal plate 70 which is a heat conductive material is provided on the top. The heat transferred from the light emitting chip 30 to the metal plate 70 can be dissipated from the lower surface side pattern 17 of the substrate 10B through the through holes 16.
  • Modification 5 In the third modification or the fourth modification, when the metal plate 70 is provided, the opaque resins 51A and 51B or the opaque resin 51 may be omitted. In this case, direct light emitted from the light emitting chip 30 to the light receiving chip 20 is shielded by the metal plate 70.
  • Modification 7 Although an example of bonding connection between the light receiving chip 20 and the light emitting chip 30 and the pattern of the substrate 10 has been described, other connection methods such as flip chip connection or TAB connection may be used.
  • FIG. 7 is a cross-sectional view of the light source integrated light sensor 1P according to the eighth modification.
  • the light source integrated photo sensor 1P according to FIG. 7 is different from the light source integrated photo sensor 1 according to the above embodiment in that layers 18A, 18B, 18C, 18D of opaque resin are stacked on the substrate 10.
  • FIG. 8A An opaque resin 18 is applied on the circuit board 10 illustrated in FIG. 2A so as to be in contact with the outer peripheral surfaces of the light receiving chip 20 and the light emitting chip 30, and a light shielding layer made of the opaque resin 18 is provided.
  • the opaque resin 18A is formed on the left side of the light receiving chip 20, the opaque resin 18 is formed between the light receiving chip 20 and the light emitting chip 30, and the opaque resin 18D is formed on the right side of the light emitting chip 30. .
  • the light receiving chip 20 and the bonding wires 21 and 22, the light emitting chip 30 and the bonding wire 31, and the opaque resins 18A, 18 and 18D are sealed with the transparent resin 41, respectively.
  • a dicing process is performed to cut a part of the transparent resin 41 and the opaque resin 18 deeper than the surface of the substrate 10 between the light receiving chip 20 and the light emitting chip 30.
  • the transparent resin 41 is separated into the transparent resins 41A and 41B
  • the opaque resin 18 is separated into the opaque resins 18B and 18C.
  • the opaque resin 51 is filled in the cut space.
  • a heat insulating material having a low thermal conductivity is used as the opaque resin 51.
  • dicing processing is performed to cut a part of the filled opaque resin 51 until it reaches the bottom of the space filled with the opaque resin 51 (that is, the substrate 10).
  • the opaque resin 51 is separated into the opaque resins 51A and 51B, and the light source integrated optical sensor 1P illustrated in FIG. 7 is obtained.
  • the light source integrated optical sensor 1P according to the modification 8 has the same function and effect as the light source integrated sensor 1.
  • the opaque resin layers 18 are laminated on the substrate 10, and the opaque resin 51A, 51B is opaque resin 18B, 18C in the space 60 cut deeper than the light shielding layer by the opaque resin layer 18. Since the light from the light emitting chip 30 travels in the substrate 10 and reaches the light receiving chip 20, so-called light leakage can be suppressed.
  • FIG. 9 is a cross-sectional view of a light source integrated light sensor 1F according to a second embodiment of the present invention.
  • the same components as those of the light source integrated light sensor 1 (FIG. 1) of the first embodiment are denoted by the same reference numerals as those in FIG.
  • a metal plate 70 is provided between the light receiving chip 20 and the light emitting chip 30, an opaque resin 51K is provided on the light receiving chip 20 side with the metal plate 70 interposed, and an opaque resin 51L is provided on the light emitting chip 30 side. It is done.
  • An opaque resin 51J is provided on the opposite side of the light receiving chip 20 to the opaque resin 51K.
  • an opaque resin 51M is provided on the opposite side of the light emitting chip 30 to the opaque resin 51L.
  • a transparent resin 41A is provided on the opaque resin 51J, the light receiving chip 20, and the opaque resin 51K so as to cover them and the bonding portions of the bonding wires 21 and 22 together.
  • a transparent resin 41B is provided so as to cover both of them and the bonding portion of the bonding wire 31.
  • the patterns 11 and 12 on the substrate 10B are connected to the pattern 13 and the like formed on the lower surface of the substrate 10B through other through holes similar to the through holes 15 or through vias (not shown).
  • the manufacturing procedure of the light source integrated type optical sensor 1 mentioned above is demonstrated with reference to FIG.
  • the light receiving chip 20 is die-mounted at a predetermined position on the upper surface of the circuit board 10B on which a pattern is formed.
  • the light emitting chip 30 is die-mounted on the pattern connected to the through hole 15.
  • the plurality of electrodes of the light receiving chip 20 and the patterns 11 and 12 and other patterns of the substrate 10B are bonded by bonding wires 21 and 22 and bonding wires (not shown), respectively.
  • the upper electrode of the light emitting chip 30 and the predetermined pattern of the substrate 10B are bonded by the bonding wire 31.
  • the dam material 65 is pasted right above the through hole 16.
  • the dam material 65 is used as a mask when forming the opaque resin 51 and the transparent resin 41 described later.
  • an opaque resin 51 is applied to cover the surface of the substrate 10B.
  • the opaque resin 51J is on the left side of the light receiving chip 20
  • the opaque resin 51K is between the light receiving chip 20 and the dam material 65
  • the opaque resin 51L is between the dam material 65 and the light emitting chip 30
  • the opaque resin is on the right side of the light emitting chip 30.
  • 51M are provided respectively.
  • a heat insulating material having a low thermal conductivity is used for the opaque resin 51.
  • the transparent resin 41 is applied over the opaque resins 51J, 51K, 51L, 51M, the light receiving chip 20, the dam material 65, and the light emitting chip 30, and then the dam material 65 is peeled off.
  • the transparent resin 41 since the groove (the space 60 reaching the surface of the substrate 10B) is formed at the position where the dam material 65 was present, the transparent resin 41 is the transparent resin 41A on the left side of the position where the dam material 65 existed. It is separated into the transparent resin 41 B on the right side of the position where the dam material 65 was present.
  • the light source integrated photosensor 1F illustrated in FIG. 9 is obtained.
  • a filler may be applied to fill the gap between the metal plate 70 and the opaque resin 51L and between the metal plate 70 and the opaque resin 51K in order to facilitate heat absorption to the metal plate 70. .
  • FIG. 19 is a flowchart showing a manufacturing procedure of the light source integrated sensor according to the second embodiment.
  • the step of providing the light receiving chip 20 and the light emitting chip 30 in a predetermined area on the substrate 10B (S1 in FIG. 19); 19 (step S2 in FIG. 19), forming opaque resin 51 on the area other than the light receiving chip 20 and the light emitting chip 30 (S3 in FIG. 19), the light receiving chip 20, the light emitting chip 30,
  • the step of forming the transparent resin 41 on the area of the opaque resin 51 (S4 in FIG. 19) and the step of removing the dam material 65 (S5 in FIG.
  • the transparent resin 41 and the opaque resin 51 are formed by the transparent resin 41A and the opaque resin 51K on the left side of the position where the dam material 65 is removed and the transparent resin 41B and the opaque resin 51L on the right side where the dam material 65 is removed. , Easy to separate.
  • the metal plate 70 is further provided in the space 60 of FIG. 10C and the heat transmitted from the light emitting chip 30 side to the metal plate 70 The heat is dissipated to the lower surface side pattern 17 (FIG. 9) of the substrate 10B through the through hole 16 immediately below.
  • the metal plate 70 By providing the metal plate 70 to enhance the heat radiation effect, the heat conduction from the light emitting chip 30 side to the light receiving chip 20 side is relaxed. Thus, it is possible to provide a light source integrated photosensor 1F in which the deterioration of the characteristics due to heat is suppressed.
  • Modification 9 instead of mounting the metal plate 70 in the space 60 of FIG. 10C, it may be a light source integrated optical sensor in the state of FIG. Even if the metal plate 70 is not mounted, heat conduction from the light emitting chip 30 to the light receiving chip 20 is alleviated by providing the space 60, so the surface of the transparent resin 41A covering the light receiving chip 20 is deformed by heat. And the transparent resin 41A can be prevented from being discolored. In the case of the ninth modification, even if external light is incident into the space 60, the light receiving chip 20 is shielded by the opaque resin 51K so as not to receive light.
  • FIG. 11 is a cross-sectional view of a light source integrated light sensor 1G according to a third embodiment of the present invention.
  • the light source integrated photo sensor 1G according to FIG. 11 is different from the light source integrated photo sensor 1F in that the metal plate 70 (or the space 60) is not provided between the light emitting chip 30 and the light receiving chip 20.
  • the difference is that the through hole 16 for heat dissipation is not provided, and the periphery of the opening (light receiving portion) of the light receiving chip 20 is surrounded by the opaque resins 51J and 51K.
  • the opaque resins 51J and 51K are used as masks when forming the transparent resin 41 described later.
  • the manufacturing procedure of the light source integrated type optical sensor 1G mentioned above is demonstrated with reference to FIG.
  • the light receiving chip 20 is die-mounted at a predetermined position on the upper surface of the circuit board 10 on which a pattern is formed.
  • the light emitting chip 30 is die-mounted on the pattern connected to the through hole 15.
  • the plurality of electrodes of the light receiving chip 20 and the patterns 11 and 12 and other patterns of the substrate 10 are bonded by bonding wires 21 and 22 and bonding wires (not shown), respectively.
  • the upper electrode of the light emitting chip 30 and the predetermined pattern of the substrate 10 are bonded by bonding wires 31.
  • a dam material is formed using opaque resins 51J and 51K so as to surround the periphery of the opening (incident opening) of the light receiving chip 20.
  • opaque resins 51J and 51K a heat insulating material having a low thermal conductivity is used.
  • the transparent resin 41 is applied over the substrate 10, the light receiving chip 20, and the light emitting chip 30.
  • the transparent resin 41 has a region 41A covering the opening (light receiving portion) of the light receiving chip 20 inside the dam material, and the dam It is separated into the outer region 41B of the material.
  • FIG. 22 is a flowchart showing a manufacturing procedure of the light source integrated sensor according to the third embodiment.
  • the step of providing the light receiving chip 20 and the light emitting chip 30 in a predetermined area on the substrate 10 (S31 in FIG. 22) and the incident opening on the light receiving chip 20 thus, the steps of forming the opaque resins 51J and 51K (S32 in FIG. 22) and the steps of forming the transparent resin 41 on the inside and outside of the opaque resins 51J and 51K (S33 in FIG. 22) are performed in the order of the above steps I did it.
  • the transparent resin 41 is separated into the transparent resin 41A on the inner side of the above-mentioned opaque resins 51J and 51K and the transparent resin 41B on the outer side of the opaque resins 51J and 51K.
  • Heat conduction to the transparent resin 41A is alleviated.
  • FIG. 13 is a cross-sectional view of a light source integrated light sensor 1H according to a fourth embodiment of the present invention.
  • the light source integrated photo sensor 1H according to FIG. 13 is different from the above-described light source integrated photo sensor 1G in that the opening (light receiving portion) of the light receiving chip 20 is sealed in a lens shape with the transparent resin 41C.
  • the light receiving chip 20 is die-mounted at a predetermined position on the upper surface of the circuit board 10 on which a pattern is formed.
  • the light emitting chip 30 is die-mounted on the pattern connected to the through hole 15. Subsequently, the plurality of electrodes of the light receiving chip 20 and the patterns 11 and 12 and other patterns of the substrate 10 are bonded by bonding wires 21 and 22 and bonding wires (not shown), respectively. Further, the upper electrode of the light emitting chip 30 and the predetermined pattern of the substrate 10 are bonded by bonding wires 31.
  • the opening (light receiving portion) of the light receiving chip 20 is sealed with the transparent resin 41C raised in a lens shape by potting. Further, the opening (light emitting portion) of the light emitting chip 30 is sealed with the transparent resin 41D raised in a lens shape by potting. Each of these has a lens effect.
  • the opaque resin 51 is applied over the substrate 10, the light receiving chip 20, and the light emitting chip 30.
  • the transparent resins 41C and 41D and the opaque resins 51J, 51K, and 51L are separately formed by applying them by avoiding the transparent resins 41C and 41D, which are previously potted, respectively. At this time, the opaque resins 51J, 51K, and 51L are formed higher than the transparent resins 41C and 41D.
  • FIG. 20 is a flowchart showing a manufacturing procedure of the light source integrated sensor according to the fourth embodiment.
  • the step of providing the light receiving chip 20 and the light emitting chip 30 in a predetermined area on the substrate 10 (S11 in FIG. 20); Forming the transparent resin 41C and 41D respectively (S12 in FIG. 20), and forming the opaque resin 51J, 51K and 51L higher than the transparent resin 41C and 41D on the area other than the light receiving chip 20 and the light emitting chip 30 (S12 in FIG. Step S13) in FIG. 20 is performed in the order of the above steps.
  • the transparent resin 41C is separated from the above-mentioned opaque resins 51J and 51K, the heat conduction from the light emitting chip 30 to the transparent resin 41C covering the light receiving chip 20 is relaxed. As a result, it is possible to provide a light source integrated photosensor 1H in which the deterioration of the characteristics due to the heat from the light emitting chip 30 is suppressed. Since the resin is easily deformed or discolored by heat, it is important to reduce the heat conduction from the light emitting chip 30 to the transparent resin 41C covering the light receiving chip 20.
  • FIG. 21 is a flowchart showing the manufacturing procedure of the modification 10.
  • the modification 10 is different from the procedure of the fourth embodiment in that the opaque resin 51 is applied (S22 in FIG. 21) before potting the transparent resins 41C and 41D (S23 in FIG. 21). The manufacturing procedure of the modification 10 will be described with reference to FIG.
  • the opaque resin 51 is applied from above the substrate 10, the light receiving chip 20, and the light emitting chip 30 while avoiding the potting planned position of the transparent resin 41C and the potted planned position of the transparent resin 41D (S22).
  • the transparent resin 41C and 41D are potted in a lens shape, thereby sealing the opening (light receiving portion) of the light receiving chip 20 and the opening (light emitting portion) of the light emitting chip 30 (S23).
  • the transparent resins 41 C and 41 D are formed lower than the opaque resin 51.
  • FIG. 16 is a cross-sectional view of a light source integrated light sensor 1I according to a fifth embodiment of the present invention.
  • the light source integrated optical sensor 1I according to FIG. 16 has a transparent resin 41 on the opening (light receiving part) of the light receiving chip 20 and the opening (light emitting part) of the light emitting chip 30 as compared to the light source integrated optical sensor 1H described above. The difference is that the glass material 80 is provided on the opening (light receiving portion) of the light receiving chip 20, not potting.
  • the manufacturing procedure of the light source integrated optical sensor 1I mentioned above is demonstrated with reference to FIG. 16 and FIG.
  • the light receiving chip 20 is die-mounted at a predetermined position on the upper surface of the circuit board 10 on which a pattern is formed.
  • the light emitting chip 30 is die-mounted on the pattern connected to the through hole 15.
  • the plurality of electrodes of the light receiving chip 20 and the patterns 11 and 12 and other patterns of the substrate 10 are bonded by bonding wires 21 and 22 and bonding wires (not shown), respectively.
  • the upper electrode of the light emitting chip 30 and the predetermined pattern of the substrate 10 are bonded by bonding wires 31.
  • the glass material 80 is bonded onto the opening (light receiving portion) of the light receiving chip 20.
  • opaque resins 51 J, 51 K, and 51 L are applied from above the substrate 10, the light receiving chip 20, and the light emitting chip 30 while avoiding the glass member 80 and the opening (light emitting portion) of the light emitting chip 30.
  • the opaque resins 51J, 51K, and 51L are made higher than the light emitting chip 30.
  • a transparent resin 41 is applied and coated to form a region 41B covering the light emitting chip 30 and a region 41A at the left end as illustrated in FIG.
  • FIG. 23 is a flowchart showing the manufacturing procedure of the light source integrated sensor according to the fifth embodiment.
  • the steps of forming the transparent resins 41A and 41B (S44 in FIG. 23) on the area of the above are performed in the order of the above steps, so even if heat is transmitted from the light emitting chip 30 side to the glass material 80, unlike the case of the transparent resin. , No deformation or discoloration occurs. Therefore, it is possible to provide a light source integrated photosensor 1I in which the deterioration of the characteristics due to the heat from the light emitting chip 30 is suppressed.
  • Japanese Patent Application 2012 No. 105 940 (filed on May 7, 2012)
  • Japanese Patent Application 2012 No. 105941 (filed on May 7, 2012)
  • Japanese Patent Application 2013 No. 564 (filed on January 7, 2013)

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Abstract

This light source-integrated optical sensor is provided with: a light receiving part that is formed in a predetermined region on a substrate; a light emitting part that is formed in a region different from the region of the light receiving part on the substrate; a first light transmitting member that is formed on the light receiving part so as to cover the light receiving part; a second light transmitting member that is arranged on the light emitting part so as to cover the light emitting part, with a space between itself and the first light transmitting member; and a light shielding member that is partially formed in the space.

Description

光源一体型光センサ、および光源一体型光センサの製造方法Light source integrated light sensor and method of manufacturing light source integrated light sensor

　本発明は、光源一体型光センサ、およびその製造方法に関する。 The present invention relates to a light source integrated light sensor and a method of manufacturing the same.

　基板上に不透明な樹脂を挟んで発光チップおよび受光チップを設け、これら発光チップおよび受光チップを透明樹脂で覆った光源一体型光センサが知られている（特許文献１参照）。 There is known a light source integrated photo sensor in which a light emitting chip and a light receiving chip are provided on a substrate with an opaque resin interposed, and the light emitting chip and the light receiving chip are covered with a transparent resin (see Patent Document 1).

米国特許出願公開第２０１０／０２５８７１０号明細書U.S. Patent Application Publication No. 2010/0258710

　従来技術では、発光チップで発生する熱が受光チップ側へ伝わることによって、受光チップ上の透明樹脂の表面の平坦形状が損なわれ変形したり、受光チップ上の透明樹脂が変質や変色したりするおそれがあった。受光チップ上の透明樹脂の表面の変形や変色は、受光感度の低下など受光特性の劣化につながる。 In the prior art, when the heat generated by the light emitting chip is transferred to the light receiving chip side, the flat shape of the surface of the transparent resin on the light receiving chip is lost and deformed, or the transparent resin on the light receiving chip is altered or discolored. There was a fear. The deformation or discoloration of the surface of the transparent resin on the light receiving chip leads to the deterioration of the light receiving characteristics such as a decrease in light receiving sensitivity.

　本発明の第１の態様によると、光源一体型光センサは、基板上の所定領域に設けられた受光部と、基板上の受光部と異なる領域に設けられた発光部と、受光部上に当該受光部を覆うように設けられた第１透光部材と、第１透光部材と空間を介して設けられ、発光部上に当該発光部を覆うように設けられた第２透光部材と、空間の一部に形成された遮光部材と、を備える。
　本発明の第２の態様によると、第１の態様による光源一体型光センサにおいて、遮光部材は、断熱性材料によって構成されることが好ましい。
　本発明の第３の態様によると、第１の態様による光源一体型光センサにおいて、遮光部材は、導熱性材料によって構成されることが望ましい。
　本発明の第４の態様によると、第３の態様による光源一体型光センサにおいて、導熱性材料は、基板に設けられているスルーホール上に位置することが好ましい。
　本発明の第５の態様によると、第１～第４の態様による光源一体型光センサにおいて、少なくとも第１透光部材は、樹脂によって形成されていることが好ましい。
　本発明の第６の態様によると、光源一体型光センサの製造方法は、基板上の所定領域に受光部および発光部をそれぞれ設ける工程と、受光部と発光部との間においてマスク部材を設ける工程と、受光部および発光部以外の領域上に遮光部材を形成する工程と、受光部、発光部、および遮光部材の領域上にそれぞれ透光部材を形成する工程と、マスク部材を除去する工程と、を上記工程順に行う。
　本発明の第７の態様によると、光源一体型光センサの製造方法は、基板上の所定領域に受光部および発光部をそれぞれ設ける工程と、受光部および発光部の領域上にそれぞれ透光部材を形成する工程と、受光部および発光部以外の領域上に、遮光部材を透光部材より高く形成する工程と、を上記工程順に行う。
　本発明の第８の態様によると、光源一体型光センサの製造方法は、基板上の所定領域に受光部および発光部をそれぞれ設ける工程と、受光部および発光部以外の領域上に遮光部材を形成する工程と、受光部および発光部の領域上に、それぞれ透光部材を遮光部材より低く形成する工程と、を上記工程順に行う。
　本発明の第９の態様によると、光源一体型光センサの製造方法は、基板上の所定領域に受光部および発光部をそれぞれ設ける工程と、受光部上において入射口を囲むように遮光部材を形成する工程と、遮光部材の内側および外側それぞれの領域上に透光部材を形成する工程と、上記工程順に行う。
　本発明の第１０の態様によると、光源一体型光センサの製造方法は、基板上の所定領域に受光部および発光部をそれぞれ設ける工程と、受光部の領域上にガラス部材を設ける工程と、ガラス部材および発光部以外の領域上に、遮光部材を発光部より高く形成する工程と、発光部および遮光部材の領域上に透光部材を形成する工程と、を上記工程順に行う。
　本発明の第１１の態様によると、第６～第１０の態様による光源一体型光センサの製造方法において、遮光部材には、断熱性材料を用いるのが好ましい。 According to the first aspect of the present invention, the light source integrated light sensor includes a light receiving unit provided in a predetermined area on the substrate, a light emitting unit provided in an area different from the light receiving unit on the substrate, and a light receiving unit. A first light transmitting member provided to cover the light receiving portion, and a second light transmitting member provided via the first light transmitting member and the space, and covering the light emitting portion on the light emitting portion And a light shielding member formed in a part of the space.
According to a second aspect of the present invention, in the light source integrated light sensor according to the first aspect, the light blocking member is preferably made of a heat insulating material.
According to a third aspect of the present invention, in the light source integrated light sensor according to the first aspect, the light blocking member is desirably made of a heat conductive material.
According to a fourth aspect of the present invention, in the light source integrated light sensor according to the third aspect, the heat conductive material is preferably located on a through hole provided in the substrate.
According to the fifth aspect of the present invention, in the light source integrated light sensor according to the first to fourth aspects, at least the first light transmitting member is preferably made of resin.
According to a sixth aspect of the present invention, a method of manufacturing a light source integrated optical sensor includes the steps of: providing a light receiving unit and a light emitting unit in a predetermined area on a substrate; and providing a mask member between the light receiving unit and the light emitting unit. A step of forming a light shielding member on a region other than the light receiving portion and the light emitting portion, a step of forming a light transmitting member on the light receiving portion, the light emitting portion and a region of the light shielding member, and a step of removing the mask member And in the order of the above steps.
According to a seventh aspect of the present invention, a method of manufacturing a light source integrated optical sensor includes the steps of: providing a light receiving portion and a light emitting portion in a predetermined area on a substrate; and transmitting light through the light receiving portion and the light emitting portion. And forming the light shielding member higher than the light transmitting member on the regions other than the light receiving portion and the light emitting portion.
According to an eighth aspect of the present invention, a method of manufacturing a light source integrated optical sensor includes the steps of: providing a light receiving unit and a light emitting unit in a predetermined area on a substrate; The forming step and the step of forming the light transmitting member lower than the light shielding member on the light receiving portion and the light emitting portion are performed in the order of the above steps.
According to a ninth aspect of the present invention, a method of manufacturing a light source integrated optical sensor includes the steps of: providing a light receiving unit and a light emitting unit in a predetermined area on a substrate; The forming step, the step of forming the light transmitting member on the inner and outer regions of the light shielding member, and the above steps are performed in this order.
According to a tenth aspect of the present invention, a method of manufacturing a light source integrated photosensor includes the steps of: providing a light receiving portion and a light emitting portion in a predetermined region on a substrate; and providing a glass member on the region of the light receiving portion. The step of forming the light shielding member higher than the light emitting portion on the region other than the glass member and the light emitting portion, and the step of forming the light transmitting member on the regions of the light emitting portion and the light shielding member are performed in the order of the above steps.
According to an eleventh aspect of the present invention, in the method of manufacturing a light source integrated light sensor according to the sixth to tenth aspects, it is preferable to use a heat insulating material as the light shielding member.

　本発明による光源一体型光センサでは、発光部からの熱による特性劣化を抑えられる。 In the light source integrated light sensor according to the present invention, the characteristic deterioration due to the heat from the light emitting unit can be suppressed.

図１は、本発明の第一の実施形態による光源一体型光センサの断面図である。FIG. 1 is a cross-sectional view of a light source integrated light sensor according to a first embodiment of the present invention. 図２(a),図２(b),図２(c),図２(d)は、光源一体型光センサの製造方法を説明する図である。FIG. 2A, FIG. 2B, FIG. 2C, and FIG. 2D are diagrams for explaining a method of manufacturing the light source integrated optical sensor. 図３は、変形例１による光源一体型光センサの断面図である。FIG. 3 is a cross-sectional view of the light source integrated light sensor according to the first modification. 図４は、変形例２による光源一体型光センサの断面図である。FIG. 4 is a cross-sectional view of a light source integrated light sensor according to a second modification. 図５は、変形例３による光源一体型光センサの断面図である。FIG. 5 is a cross-sectional view of the light source integrated light sensor according to the third modification. 図６は、変形例４による光源一体型光センサの断面図である。FIG. 6 is a cross-sectional view of a light source integrated light sensor according to a fourth modification. 図７は、変形例８による光源一体型光センサの断面図である。FIG. 7 is a cross-sectional view of the light source integrated light sensor according to the eighth modification. 図８(a),図８(b),図８(c)は、光源一体型光センサの製造方法を説明する図である。FIG. 8A, FIG. 8B, and FIG. 8C are diagrams for explaining a method of manufacturing the light source integrated light sensor. 図９は、第二の実施形態による光源一体型光センサの断面図である。FIG. 9 is a cross-sectional view of the light source integrated light sensor according to the second embodiment. 図１０(a),図１０(b),図１０(c)は、光源一体型光センサの製造手順を説明する図である。FIG. 10A, FIG. 10B, and FIG. 10C are diagrams for explaining the manufacturing procedure of the light source integrated light sensor. 図１１は、第三の実施形態による光源一体型光センサの断面図である。FIG. 11 is a cross-sectional view of the light source integrated light sensor according to the third embodiment. 図１２は、光源一体型光センサの製造手順を説明する図である。FIG. 12 is a diagram for explaining the manufacturing procedure of the light source integrated light sensor. 図１３は、第四の実施形態による光源一体型光センサの断面図である。FIG. 13 is a cross-sectional view of a light source integrated light sensor according to a fourth embodiment. 図１４は、光源一体型光センサの製造手順を説明する図である。FIG. 14 is a diagram for explaining the manufacturing procedure of the light source integrated light sensor. 図１５は、変形例９の光源一体型光センサの製造手順を説明する図である。FIG. 15 is a diagram for explaining the manufacturing procedure of the light source integrated light sensor according to the ninth modification. 図１６は、第五の実施形態による光源一体型光センサの断面図である。FIG. 16 is a cross-sectional view of the light source integrated light sensor according to the fifth embodiment. 図１７は、光源一体型光センサの製造手順を説明する図である。FIG. 17 is a view for explaining the manufacturing procedure of the light source integrated light sensor. 図１８は、光源一体型光センサの製造手順を説明する図である。FIG. 18 is a view for explaining the manufacturing procedure of the light source integrated light sensor. 図１９は、第二の実施形態による光源一体型センサの製造手順を示すフローチャートである。FIG. 19 is a flowchart showing a manufacturing procedure of the light source integrated sensor according to the second embodiment. 図２０は、第四の実施形態による光源一体型センサの製造手順を示すフローチャートである。FIG. 20 is a flowchart showing a manufacturing procedure of the light source integrated sensor according to the fourth embodiment. 図２１は、変形例９による光源一体型センサの製造手順を示すフローチャートである。FIG. 21 is a flowchart showing the manufacturing procedure of the light source integrated sensor according to the ninth modification. 図２２は、第三の実施形態による光源一体型センサの製造手順を示すフローチャートである。FIG. 22 is a flowchart showing a manufacturing procedure of the light source integrated sensor according to the third embodiment. 図２３は、第五の実施形態による光源一体型センサの製造手順を示すフローチャートである。FIG. 23 is a flowchart showing the manufacturing procedure of the light source integrated sensor according to the fifth embodiment.

　以下、図面を参照して本発明を実施するための形態について説明する。
＜第一の実施形態＞
　図１は、本発明の第一の実施形態による光源一体型光センサ１の断面図である。光源一体型光センサ１は、発光素子および受光素子を一体に構成したものであり、例えば、発光素子から発した光が外部対象物で反射され、その反射光が受光素子で受光されるか否かに基づいて外部対象物の存否を判定する用途などに用いられる。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
First Embodiment
FIG. 1 is a cross-sectional view of a light source integrated light sensor 1 according to a first embodiment of the present invention. The light source integrated optical sensor 1 is an integrated light emitting element and light receiving element. For example, whether light emitted from the light emitting element is reflected by the external object and the reflected light is received by the light receiving element It is used, for example, for determining the presence or absence of an external object based on heel.

　図１において、有機材料、セラミック、リードフレームなどで構成される基板１０の上面に、受光素子（フォトダイオード）および周辺回路を有する受光チップ（PDIC）２０が設けられている。受光チップ２０は、ボンディングワイヤ２１、２２によって基板１０上のパターン１１、１２と接続されている。 In FIG. 1, a light receiving chip (PDIC) 20 having a light receiving element (photodiode) and a peripheral circuit is provided on the upper surface of a substrate 10 made of an organic material, ceramic, lead frame or the like. The light receiving chip 20 is connected to the patterns 11 and 12 on the substrate 10 by bonding wires 21 and 22.

　基板１０の上面にはさらに、発光素子で構成される発光チップ３０が設けられている。発光チップ３０は、例えば発光ダイオード（LED）であり、発光チップ３０のアノード電極およびカソード電極のうち一方が、金属で構成されたスルーホール１５を介して、基板１０の下面に形成されているパターン１４と接続される。発光チップ３０の他方の電極は、ボンディングワイヤ３１によって基板１０上の図示しないパターンと接続されている。 Further, on the upper surface of the substrate 10, a light emitting chip 30 formed of a light emitting element is provided. The light emitting chip 30 is, for example, a light emitting diode (LED), and one of the anode electrode and the cathode electrode of the light emitting chip 30 is formed on the lower surface of the substrate 10 through the through hole 15 made of metal. It is connected with 14. The other electrode of the light emitting chip 30 is connected to a pattern (not shown) on the substrate 10 by a bonding wire 31.

　上記受光チップ２０および発光チップ３０の間には空間６０が設けられ、空間６０を挟んで受光チップ２０側に不透明樹脂５１Ａが、発光チップ３０側に不透明樹脂５１Ｂが、それぞれ設けられている。不透明樹脂５１Ｂの高さについては、少なくとも発光チップ３０から受光チップ２０側へ射出される光を遮蔽して、受光チップ２０が発光チップ３０からの直接光を受光しない高さが確保される。不透明樹脂５１Ａの高さは、不透明樹脂５１Ｂの高さと略同じである。不透明樹脂５１Ａは、空間６０へ入射された外光を受光チップ２０が受光しないように設けられる。 A space 60 is provided between the light receiving chip 20 and the light emitting chip 30. An opaque resin 51A is provided on the light receiving chip 20 side with the space 60 interposed therebetween, and an opaque resin 51B is provided on the light emitting chip 30 side. With regard to the height of the opaque resin 51B, at least the light emitted from the light emitting chip 30 to the light receiving chip 20 is shielded, and a height at which the light receiving chip 20 does not receive direct light from the light emitting chip 30 is secured. The height of the opaque resin 51A is substantially the same as the height of the opaque resin 51B. The opaque resin 51 </ b> A is provided such that the light receiving chip 20 does not receive external light that has entered the space 60.

　不透明樹脂５１Ａの受光チップ２０側には、受光チップ２０およびボンディングワイヤ２１、２２を覆うように透明樹脂４１Ａが設けられる。また、不透明樹脂５１Ｂの発光チップ３０側には、発光チップ３０およびボンディングワイヤ３１を覆うように透明樹脂４１Ｂが設けられる。 A transparent resin 41A is provided on the light receiving chip 20 side of the opaque resin 51A so as to cover the light receiving chip 20 and the bonding wires 21 and 22. Further, on the light emitting chip 30 side of the opaque resin 51B, a transparent resin 41B is provided so as to cover the light emitting chip 30 and the bonding wire 31.

　なお、基板１０上のパターン１１、１２は、スルーホール１５と同様の他のスルーホール、または、図示しない貫通ビアを介して基板１０の下面に形成されているパターン１３などと接続されている。 The patterns 11 and 12 on the substrate 10 are connected to the other formed through holes similar to the through holes 15 or the pattern 13 formed on the lower surface of the substrate 10 through a through via (not shown).

　上述した光源一体型光センサ１の製造方法について、図２を参照して説明する。図２(a)において、パターンが形成されている回路基板１０の上面の所定位置に受光チップ２０をダイマウントする。発光チップ３０を、スルーホール１５と接続されているパターン上にダイマウントする。続いて、受光チップ２０の複数の電極と、基板１０のパターン１１、１２および他のパターンとの間をそれぞれボンディングワイヤ２１、２２、および不図示のボンディングワイヤでボンディング接続する。また、発光チップ３０の上側の電極と、基板１０の所定パターンとの間をボンディングワイヤ３１によってボンディング接続する。 The manufacturing method of the light source integrated type optical sensor 1 mentioned above is demonstrated with reference to FIG. In FIG. 2A, the light receiving chip 20 is die-mounted at a predetermined position on the upper surface of the circuit board 10 on which a pattern is formed. The light emitting chip 30 is die-mounted on the pattern connected to the through hole 15. Subsequently, the plurality of electrodes of the light receiving chip 20 and the patterns 11 and 12 and other patterns of the substrate 10 are bonded by bonding wires 21 and 22 and bonding wires (not shown), respectively. Further, the upper electrode of the light emitting chip 30 and the predetermined pattern of the substrate 10 are bonded by bonding wires 31.

　図２(b)において、受光チップ２０およびボンディングワイヤ２１、２２、および発光チップ３０およびボンディングワイヤ３１をそれぞれ覆うように透明樹脂４１で封止する。図２(c)において、受光チップ２０および発光チップ３０間において、透明樹脂４１の一部を基板１０の表面に到達するまで切削するダイシング加工を施す。これにより、透明樹脂４１が透明樹脂４１Ａと４１Ｂに分離される。なお、切削の深さは、基板１０の表面より深くしてもよい。 In FIG. 2B, the light receiving chip 20 and the bonding wires 21 and 22, and the light emitting chip 30 and the bonding wire 31 are respectively sealed with a transparent resin 41 so as to cover them. In FIG. 2C, a dicing process is performed between the light receiving chip 20 and the light emitting chip 30 to cut part of the transparent resin 41 until it reaches the surface of the substrate 10. Thereby, the transparent resin 41 is separated into the transparent resins 41A and 41B. The depth of cutting may be deeper than the surface of the substrate 10.

　図２(d)において、透明樹脂４１Ａと４１Ｂとの間に不透明樹脂５１を充填する。不透明樹脂５１には、熱伝導率が低い断熱性材料を用いる。そして、充填した不透明樹脂５１の一部を基板１０の表面に到達するまで切削するダイシング加工を施す。これにより、不透明樹脂５１が不透明樹脂５１Ａと５１Ｂに分離され、図１に例示した光源一体型光センサ１が得られる。 In FIG. 2D, the opaque resin 51 is filled between the transparent resins 41A and 41B. As the opaque resin 51, a heat insulating material having a low thermal conductivity is used. Then, dicing processing is performed to cut a part of the filled opaque resin 51 until it reaches the surface of the substrate 10. Thereby, the opaque resin 51 is separated into the opaque resins 51A and 51B, and the light source integrated optical sensor 1 illustrated in FIG. 1 is obtained.

　以上説明した第一の実施形態によれば、次の作用効果が得られる。
（１）光源一体型光センサ１は、基板１０上の所定領域に設けられた受光チップ２０と、基板１０上の受光チップ２０と異なる領域に設けられた発光チップ３０と、受光チップ２０上に当該受光チップ２０を覆うように設けられた透明樹脂４１Ａと、透明樹脂４１Ａと空間６０を介して設けられ、発光チップ３０上に当該発光チップ３０を覆うように設けられた透明樹脂４１Ｂと、空間６０の一部に形成された不透明樹脂５１Ａ，５１Ｂとを備えるようにしたので、発光チップ３０からの熱による影響を抑えることができる。具体的には、受光チップ２０を覆う透明樹脂４１Ａの表面が熱により変形したり、透明樹脂４１Ａが変色したりすることを防止するので、受光特性の劣化が抑えられる。また、受光チップ２０が発光チップ３０からの直接光を受光せず、さらに、透明樹脂４１Ａと透明樹脂４１Ｂとの間の空間６０へ入射された外光も受光チップ２０が受光しないから、不要光の受光を排除できる。 According to the first embodiment described above, the following effects can be obtained.
(1) The light source integrated optical sensor 1 includes a light receiving chip 20 provided in a predetermined area on the substrate 10, a light emitting chip 30 provided in a region different from the light receiving chip 20 on the substrate 10, and the light receiving chip 20. A transparent resin 41A provided to cover the light receiving chip 20, a transparent resin 41B provided via the transparent resin 41A and the space 60, and provided on the light emitting chip 30 to cover the light emitting chip 30, and a space Since the opaque resin 51A, 51B formed on a part of the light source 60 is provided, the influence of the heat from the light emitting chip 30 can be suppressed. Specifically, since the surface of the transparent resin 41A covering the light receiving chip 20 is prevented from being deformed by heat or the transparent resin 41A is discolored, the deterioration of the light receiving characteristic can be suppressed. In addition, since the light receiving chip 20 does not receive the direct light from the light emitting chip 30 and the external light incident to the space 60 between the transparent resin 41A and the transparent resin 41B is also not received, the unnecessary light Can be eliminated.

（２）上記（１）の光源一体型光センサ１において、不透明樹脂５１Ａ，５１Ｂを断熱性材料で構成したので、発光チップ３０から受光チップ２０を覆う透明樹脂４１Ａへの熱伝導が緩和される。これにより、発光チップ３０からの熱による影響（受光特性の劣化）を抑えることができる。 (2) In the light source integrated photosensor 1 according to (1), since the opaque resins 51A and 51B are made of a heat insulating material, the heat conduction from the light emitting chip 30 to the transparent resin 41A covering the light receiving chip 20 is relaxed. . Thereby, the influence of the heat from the light emitting chip 30 (the deterioration of the light receiving characteristic) can be suppressed.

（３）上記（１）の光源一体型光センサ１において、受光チップ２０を透明樹脂４１Ａで覆うので、ガラス材で覆う場合に比べて軽量でコストが低く押されられる。 (3) In the light source integrated light sensor 1 of (1), since the light receiving chip 20 is covered with the transparent resin 41A, the light weight and cost can be pushed down as compared with the case of covering with the glass material.

（変形例１）
　図３は、変形例１による光源一体型光センサ１Ｂの断面図である。図３による光源一体型光センサ１Ｂは、上述した光源一体型光センサ１と比べて、空間６０の受光チップ２０側にのみ、不透明樹脂５１が設けられている点で異なる。 (Modification 1)
FIG. 3 is a cross-sectional view of the light source integrated light sensor 1B according to the first modification. The light source integrated light sensor 1B according to FIG. 3 is different from the light source integrated light sensor 1 described above in that the opaque resin 51 is provided only on the light receiving chip 20 side of the space 60.

　変形例１の光源一体型光センサ１Ｂについては、図２(d)に例示した不透明樹脂５１の透明樹脂４１Ｂ側において、不透明樹脂５１の一部を基板１０の表面に到達するまで切削するダイシング加工を施す。この加工により、空間６０の受光チップ２０側にのみ不透明樹脂５１が残り、空間６０の発光チップ３０側には不透明樹脂が残らない。不透明樹脂５１を設けることで、空間６０へ外光が入射されたとしても、受光チップ２０が受光しないように外光を遮光できる。なお、上記切削の深さは、基板１０の表面より深くしてもよい。 In the light source integrated photosensor 1B of the first modification, on the transparent resin 41B side of the opaque resin 51 illustrated in FIG. 2D, dicing processing is performed to cut a part of the opaque resin 51 until it reaches the surface of the substrate 10. Apply. As a result of this processing, the opaque resin 51 remains only on the light receiving chip 20 side of the space 60, and the opaque resin does not remain on the light emitting chip 30 side of the space 60. By providing the opaque resin 51, even when external light enters the space 60, the external light can be blocked so that the light receiving chip 20 does not receive light. The cutting depth may be deeper than the surface of the substrate 10.

　変形例１の場合も、空間６０を設けたことによって発光チップ３０側から受光チップ２０側への熱伝導が緩和されるため、受光チップ２０を覆う透明樹脂４１Ａの表面が熱により変形したり、透明樹脂４１Ａが変色したりすることを防止できる。 Also in the case of the first modification, the heat conduction from the light emitting chip 30 to the light receiving chip 20 is alleviated by providing the space 60, so the surface of the transparent resin 41A covering the light receiving chip 20 is deformed by heat. It is possible to prevent the transparent resin 41A from being discolored.

（変形例２）
　図４は、変形例２による光源一体型光センサ１Ｃの断面図である。図４による光源一体型光センサ１Ｃは、上述した光源一体型光センサ１と比べて、透明樹脂４１Ａの空間６０に面する側面に、遮光膜５１Ｃが形成されている点で異なる。 (Modification 2)
FIG. 4 is a cross-sectional view of a light source integrated light sensor 1C according to a second modification. The light source integrated photo sensor 1C according to FIG. 4 is different from the light source integrated photo sensor 1 described above in that a light shielding film 51C is formed on the side surface of the transparent resin 41A facing the space 60.

　変形例２の光源一体型光センサ１Ｃにおいては、図２(c)に例示した透明樹脂４１Ａの右側面（空間側）に対し、所定の金属材料をスパッタ蒸着して遮光膜５１Ｃを形成する。これにより、空間６０を挟んで透明樹脂４１Ａおよび透明樹脂４１Ｂが分離された状態で、空間６０へ入射された外光が受光チップ２０によって受光されないように遮光できる。 In the light source integrated photosensor 1C of the modification 2, a predetermined metal material is sputter-deposited on the right side surface (space side) of the transparent resin 41A illustrated in FIG. 2C to form the light shielding film 51C. Thus, in a state in which the transparent resin 41A and the transparent resin 41B are separated with the space 60 interposed therebetween, light can be blocked so that external light incident on the space 60 is not received by the light receiving chip 20.

　変形例２の場合も、空間６０を設けたことによって発光チップ３０側から受光チップ２０側への熱伝導が緩和されるため、受光チップ２０を覆う透明樹脂４１Ａの表面が熱により変形したり、透明樹脂４１Ａが変色したりすることを防止できる。 Also in the case of the second modification, since the heat conduction from the light emitting chip 30 side to the light receiving chip 20 side is alleviated by providing the space 60, the surface of the transparent resin 41A covering the light receiving chip 20 is deformed by heat. It is possible to prevent the transparent resin 41A from being discolored.

（変形例３）
　図５は、変形例３による光源一体型光センサ１Ｄの断面図である。図５による光源一体型光センサ１Ｄは、図１の光源一体型光センサ１と比べて、空間６０内に熱伝導率が高い材料、例えば金属板７０を設けている点、および金属板７０の直下となる位置に合わせてスルーホール１６が形成される点で異なる。 (Modification 3)
FIG. 5 is a cross-sectional view of a light source integrated light sensor 1D according to a third modification. The light source integrated optical sensor 1D according to FIG. 5 is provided with a material having a high thermal conductivity, such as a metal plate 70, in the space 60 as compared with the light source integrated optical sensor 1 of FIG. The difference is that the through hole 16 is formed in accordance with the position immediately below.

　変形例３の光源一体型光センサ１Ｄにおいては、基板１０にスルーホール１６が追加形成された基板１０Ｂに対して光源一体型光センサ１と同様の処理を施した上で、スルーホール１６の真上に導熱性材料である金属板７０を設ける。発光チップ３０側から金属板７０へ伝わった熱に関しては、スルーホール１６を介して基板１０Ｂの下面側パターン１７から放熱可能である。 In the light source integrated optical sensor 1D of the third modification, the substrate 10B having the through hole 16 additionally formed in the substrate 10 is subjected to the same processing as the light source integrated optical sensor 1, and then the true of the through hole 16 is obtained. A metal plate 70 which is a heat conductive material is provided on the top. The heat transferred from the light emitting chip 30 to the metal plate 70 can be dissipated from the lower surface side pattern 17 of the substrate 10B through the through holes 16.

　なお、金属板７０と不透明樹脂５１Ｂとの間には、発光チップ３０側の熱を金属板７０へ吸収しやすくするために充填剤を塗布して隙間を埋めるとよい。また、金属板７０と不透明樹脂５１Ａとの間には、両者間の熱伝導を避けるために空隙を設けておくとよい。金属板７０がスルーホール１６上に位置するため、発光チップ３０側の熱が金属板７０に伝わった場合には、スルーホール１６を介して基板１０下側へ効率よくその熱を逃がせる。 A filler may be applied between the metal plate 70 and the opaque resin 51B in order to facilitate absorption of the heat on the light emitting chip 30 side to the metal plate 70 to fill the gap. In addition, a gap may be provided between the metal plate 70 and the opaque resin 51A in order to avoid heat conduction between the two. Since the metal plate 70 is located on the through hole 16, when the heat on the light emitting chip 30 is transferred to the metal plate 70, the heat can be efficiently dissipated to the lower side of the substrate 10 through the through hole 16.

　変形例３の場合は、不透明樹脂５１Ａ，５１Ｂおよび金属板７０を設けたことによって発光チップ３０側から受光チップ２０側への熱伝導が緩和されるため、受光チップ２０を覆う透明樹脂４１Ａの表面が熱により変形したり、透明樹脂４１Ａが変色したりすることを防止できる。 In the case of the third modification, by providing the opaque resins 51A and 51B and the metal plate 70, the heat conduction from the light emitting chip 30 to the light receiving chip 20 is alleviated, so the surface of the transparent resin 41A covering the light receiving chip 20. Can be prevented from being deformed by heat or discolored the transparent resin 41A.

（変形例４）
　図６は、変形例４による光源一体型光センサ１Ｅの断面図である。図６による光源一体型光センサ１Ｅは、図３の光源一体型光センサ１Ｂと比べて、空間６０内に熱伝導率が高い材料、例えば金属板７０を設けている点、および金属板７０の直下となる位置に合わせてスルーホール１６が形成される点で異なる。 (Modification 4)
FIG. 6 is a cross-sectional view of a light source integrated light sensor 1E according to a fourth modification. The light source integrated light sensor 1E according to FIG. 6 is provided with a material having a high thermal conductivity, for example, a metal plate 70, in the space 60 as compared to the light source integrated light sensor 1B of FIG. The difference is that the through hole 16 is formed in accordance with the position immediately below.

　変形例４の光源一体型光センサ１Ｅにおいては、基板１０にスルーホール１６が追加形成された基板１０Ｂに対して光源一体型光センサ１Ｂと同様の処理を施した上で、スルーホール１６の真上に導熱性材料である金属板７０を設ける。発光チップ３０側から金属板７０へ伝わった熱に関しては、スルーホール１６を介して基板１０Ｂの下面側パターン１７から放熱可能である。 In the light source integrated optical sensor 1E of the fourth modification, the substrate 10B having the through hole 16 additionally formed in the substrate 10 is subjected to the same processing as the light source integrated optical sensor 1B, and then the true of the through hole 16 is obtained. A metal plate 70 which is a heat conductive material is provided on the top. The heat transferred from the light emitting chip 30 to the metal plate 70 can be dissipated from the lower surface side pattern 17 of the substrate 10B through the through holes 16.

　変形例４の場合は、不透明樹脂５１および金属板７０を設けたことによって発光チップ３０側から受光チップ２０側への熱伝導が緩和されるため、受光チップ２０を覆う透明樹脂４１Ａの表面が熱により変形したり、透明樹脂４１Ａが変色したりすることを防止できる。 In the case of the modification 4, since the heat conduction from the light emitting chip 30 to the light receiving chip 20 is alleviated by providing the opaque resin 51 and the metal plate 70, the surface of the transparent resin 41A covering the light receiving chip 20 is a heat. Thus, it is possible to prevent the transparent resin 41A from being discolored or discolored.

（変形例５）
　変形例３または変形例４において、金属板７０を設ける場合には不透明樹脂５１Ａ，５１Ｂまたは不透明樹脂５１を省略してもよい。この場合は、発光チップ３０から受光チップ２０側へ射出される直接光を、金属板７０に遮蔽させる。 (Modification 5)
In the third modification or the fourth modification, when the metal plate 70 is provided, the opaque resins 51A and 51B or the opaque resin 51 may be omitted. In this case, direct light emitted from the light emitting chip 30 to the light receiving chip 20 is shielded by the metal plate 70.

（変形例６）
　上述した説明では、空間６０の深さを基板１０の表面に到達する深さにする例を説明した。この代わりに、基板１０の表面に達する深さにしなくても熱的な影響を緩和できる場合には、空間６０の深さを基板１０まで到達しない途中の深さにとどめた構成にしてもよい。 (Modification 6)
In the above description, an example in which the depth of the space 60 is set to reach the surface of the substrate 10 has been described. Alternatively, if the thermal effect can be mitigated without reaching the surface of the substrate 10, the depth of the space 60 may be limited to the depth not reaching the substrate 10 .

（変形例７）
　受光チップ２０、発光チップ３０と基板１０のパターンとの間をボンディング接続する例を説明したが、これ以外の接続方法、例えばフリップチップ接続やＴＡＢ接続を用いてもよい。 (Modification 7)
Although an example of bonding connection between the light receiving chip 20 and the light emitting chip 30 and the pattern of the substrate 10 has been described, other connection methods such as flip chip connection or TAB connection may be used.

（変形例８）
　図７は、変形例８による光源一体型光センサ１Ｐの断面図である。図７による光源一体型光センサ１Ｐは、上記実施形態による光源一体型光センサ１と比べて、基板１０上に不透明樹脂の層１８Ａ、１８Ｂ、１８Ｃ、１８Ｄが積層されている点で異なる。 (Modification 8)
FIG. 7 is a cross-sectional view of the light source integrated light sensor 1P according to the eighth modification. The light source integrated photo sensor 1P according to FIG. 7 is different from the light source integrated photo sensor 1 according to the above embodiment in that layers 18A, 18B, 18C, 18D of opaque resin are stacked on the substrate 10.

　変形例８の光源一体型光センサ１Ｐの製造方法について、図２(a)および図８を参照して説明する。図２(a)に例示した回路基板１０の上に、受光チップ２０および発光チップ３０の外周面にそれぞれ接するように不透明樹脂１８を塗布して、不透明樹脂１８からなる遮光層を設ける。図８(a)において、受光チップ２０の左側に不透明樹脂１８Ａが形成され、受光チップ２０および発光チップ３０の間に不透明樹脂１８が形成され、発光チップ３０の右側に不透明樹脂１８Ｄが形成される。 A method of manufacturing the light source integrated light sensor 1P of the modified example 8 will be described with reference to FIGS. 2 (a) and 8. FIG. An opaque resin 18 is applied on the circuit board 10 illustrated in FIG. 2A so as to be in contact with the outer peripheral surfaces of the light receiving chip 20 and the light emitting chip 30, and a light shielding layer made of the opaque resin 18 is provided. In FIG. 8A, the opaque resin 18A is formed on the left side of the light receiving chip 20, the opaque resin 18 is formed between the light receiving chip 20 and the light emitting chip 30, and the opaque resin 18D is formed on the right side of the light emitting chip 30. .

　次に、受光チップ２０およびボンディングワイヤ２１、２２と、発光チップ３０およびボンディングワイヤ３１と、上記不透明樹脂１８Ａ、１８、１８Ｄとを、それぞれ透明樹脂４１で封止する。図８(b)において、受光チップ２０および発光チップ３０の間において、透明樹脂４１および不透明樹脂１８の一部を基板１０の表面より深く切削するダイシング加工を施す。これにより、透明樹脂４１が透明樹脂４１Ａと４１Ｂに分離され、不透明樹脂１８が不透明樹脂１８Ｂと１８Ｃに分離される。 Next, the light receiving chip 20 and the bonding wires 21 and 22, the light emitting chip 30 and the bonding wire 31, and the opaque resins 18A, 18 and 18D are sealed with the transparent resin 41, respectively. In FIG. 8B, a dicing process is performed to cut a part of the transparent resin 41 and the opaque resin 18 deeper than the surface of the substrate 10 between the light receiving chip 20 and the light emitting chip 30. Thereby, the transparent resin 41 is separated into the transparent resins 41A and 41B, and the opaque resin 18 is separated into the opaque resins 18B and 18C.

　図８(c)において、切削した空間に不透明樹脂５１を充填する。不透明樹脂５１には、熱伝導率が低い断熱性材料を用いる。そして、充填した不透明樹脂５１の一部を当該不透明樹脂５１が充填されている空間の底（すなわち基板１０）に到達するまで切削するダイシング加工を施す。これにより、不透明樹脂５１が不透明樹脂５１Ａと５１Ｂに分離され、図７に例示した光源一体型光センサ１Ｐが得られる。 In FIG. 8C, the opaque resin 51 is filled in the cut space. As the opaque resin 51, a heat insulating material having a low thermal conductivity is used. Then, dicing processing is performed to cut a part of the filled opaque resin 51 until it reaches the bottom of the space filled with the opaque resin 51 (that is, the substrate 10). Thereby, the opaque resin 51 is separated into the opaque resins 51A and 51B, and the light source integrated optical sensor 1P illustrated in FIG. 7 is obtained.

　変形例８による光源一体型光センサ１Ｐは、光源一体型センサ１と同様の作用効果を奏する。光源一体型光センサ１Ｐはさらに、基板１０上に不透明樹脂の層１８を積層し、不透明樹脂の層１８による遮光層より深く切削した空間６０内に、不透明樹脂５１Ａ、５１Ｂを不透明樹脂１８Ｂ、１８Ｃとそれぞれ接するように形成したので、発光チップ３０からの光が基板１０内を伝わって受光チップ２０へ到達する、いわゆる光抜けを抑止できる。 The light source integrated optical sensor 1P according to the modification 8 has the same function and effect as the light source integrated sensor 1. In the light source integrated photosensor 1P, the opaque resin layers 18 are laminated on the substrate 10, and the opaque resin 51A, 51B is opaque resin 18B, 18C in the space 60 cut deeper than the light shielding layer by the opaque resin layer 18. Since the light from the light emitting chip 30 travels in the substrate 10 and reaches the light receiving chip 20, so-called light leakage can be suppressed.

＜第二の実施形態＞
　第一の実施形態の光源一体型光センサ１と異なる光源一体型光センサ１Ｆ、およびこの製造方法について説明する。図９は、本発明の第二の実施形態による光源一体型光センサ１Ｆの断面図である。第一の実施形態の光源一体型光センサ１（図１）と同様の構成には、図１と共通の符号を付して説明を省略する。 Second Embodiment
A light source integrated light sensor 1F different from the light source integrated light sensor 1 of the first embodiment and a method of manufacturing the same will be described. FIG. 9 is a cross-sectional view of a light source integrated light sensor 1F according to a second embodiment of the present invention. The same components as those of the light source integrated light sensor 1 (FIG. 1) of the first embodiment are denoted by the same reference numerals as those in FIG.

　図９において、受光チップ２０および発光チップ３０の間には金属板７０が設けられ、金属板７０を挟んで受光チップ２０側に不透明樹脂５１Ｋが、発光チップ３０側に不透明樹脂５１Ｌが、それぞれ設けられている。受光チップ２０を挟んで不透明樹脂５１Ｋと反対側には、不透明樹脂５１Ｊが設けられている。また、発光チップ３０を挟んで不透明樹脂５１Ｌと反対側には、不透明樹脂５１Ｍが設けられている。 In FIG. 9, a metal plate 70 is provided between the light receiving chip 20 and the light emitting chip 30, an opaque resin 51K is provided on the light receiving chip 20 side with the metal plate 70 interposed, and an opaque resin 51L is provided on the light emitting chip 30 side. It is done. An opaque resin 51J is provided on the opposite side of the light receiving chip 20 to the opaque resin 51K. In addition, an opaque resin 51M is provided on the opposite side of the light emitting chip 30 to the opaque resin 51L.

　不透明樹脂５１Ｊ、受光チップ２０、および不透明樹脂５１Ｋの上には、これらとボンディングワイヤ２１、２２の接着部とをともに覆うように、透明樹脂４１Ａが設けられる。また、不透明樹脂５１Ｌ、発光チップ３０、および不透明樹脂５１Ｍの上には、これらとボンディングワイヤ３１の接着部とをともに覆うように、透明樹脂４１Ｂが設けられる。 A transparent resin 41A is provided on the opaque resin 51J, the light receiving chip 20, and the opaque resin 51K so as to cover them and the bonding portions of the bonding wires 21 and 22 together. In addition, on the opaque resin 51L, the light emitting chip 30, and the opaque resin 51M, a transparent resin 41B is provided so as to cover both of them and the bonding portion of the bonding wire 31.

　なお、基板１０Ｂ上のパターン１１、１２は、スルーホール１５と同様の他のスルーホール、または、図示しない貫通ビアを介して基板１０Ｂの下面に形成されているパターン１３などと接続されている。 The patterns 11 and 12 on the substrate 10B are connected to the pattern 13 and the like formed on the lower surface of the substrate 10B through other through holes similar to the through holes 15 or through vias (not shown).

　上述した光源一体型光センサ１の製造手順について、図１０を参照して説明する。図１０(a)において、パターンが形成されている回路基板１０Ｂの上面の所定位置に受光チップ２０をダイマウントする。発光チップ３０を、スルーホール１５と接続されているパターン上にダイマウントする。続いて、受光チップ２０の複数の電極と、基板１０Ｂのパターン１１、１２および他のパターンとの間をそれぞれボンディングワイヤ２１、２２、および不図示のボンディングワイヤでボンディング接続する。また、発光チップ３０の上側の電極と、基板１０Ｂの所定パターンとの間をボンディングワイヤ３１によってボンディング接続する。さらに、スルーホール１６の真上にダム材６５を貼り付ける。ダム材６５は、後述する不透明樹脂５１、透明樹脂４１を形成する際のマスクとして用いられる。 The manufacturing procedure of the light source integrated type optical sensor 1 mentioned above is demonstrated with reference to FIG. In FIG. 10A, the light receiving chip 20 is die-mounted at a predetermined position on the upper surface of the circuit board 10B on which a pattern is formed. The light emitting chip 30 is die-mounted on the pattern connected to the through hole 15. Subsequently, the plurality of electrodes of the light receiving chip 20 and the patterns 11 and 12 and other patterns of the substrate 10B are bonded by bonding wires 21 and 22 and bonding wires (not shown), respectively. Further, the upper electrode of the light emitting chip 30 and the predetermined pattern of the substrate 10B are bonded by the bonding wire 31. Further, the dam material 65 is pasted right above the through hole 16. The dam material 65 is used as a mask when forming the opaque resin 51 and the transparent resin 41 described later.

　図１０(b)において、基板１０Ｂの表面を覆うように不透明樹脂５１を塗布する。これにより、受光チップ２０の左側に不透明樹脂５１Ｊが、受光チップ２０およびダム材６５間に不透明樹脂５１Ｋが、ダム材６５および発光チップ３０間に不透明樹脂５１Ｌが、発光チップ３０の右側に不透明樹脂５１Ｍが、それぞれ設けられる。なお、不透明樹脂５１には、熱伝導率が低い断熱性材料を用いる。 In FIG. 10B, an opaque resin 51 is applied to cover the surface of the substrate 10B. Thereby, the opaque resin 51J is on the left side of the light receiving chip 20, the opaque resin 51K is between the light receiving chip 20 and the dam material 65, the opaque resin 51L is between the dam material 65 and the light emitting chip 30, and the opaque resin is on the right side of the light emitting chip 30. 51M are provided respectively. For the opaque resin 51, a heat insulating material having a low thermal conductivity is used.

　次に、不透明樹脂５１Ｊ、５１Ｋ、５１Ｌ、５１Ｍ、受光チップ２０、ダム材６５、および発光チップ３０の上から透明樹脂４１を塗布した後、ダム材６５をはがして除去する。図１０(c)において、ダム材６５があった位置に溝（基板１０Ｂの表面まで達する空間６０）ができるので、透明樹脂４１は、ダム材６５があった位置の左側の透明樹脂４１Ａと、ダム材６５があった位置の右側の透明樹脂４１Ｂとに分離される。 Next, the transparent resin 41 is applied over the opaque resins 51J, 51K, 51L, 51M, the light receiving chip 20, the dam material 65, and the light emitting chip 30, and then the dam material 65 is peeled off. In FIG. 10C, since the groove (the space 60 reaching the surface of the substrate 10B) is formed at the position where the dam material 65 was present, the transparent resin 41 is the transparent resin 41A on the left side of the position where the dam material 65 existed. It is separated into the transparent resin 41 B on the right side of the position where the dam material 65 was present.

　図１０(c)の状態で空間６０の中に金属板７０を設けることにより、図９に例示した光源一体型光センサ１Ｆが得られる。なお、金属板７０と不透明樹脂５１Ｌとの間、および金属板７０と不透明樹脂５１Ｋとの間において、熱を金属板７０へ吸収しやすくするために充填剤を塗布して隙間を埋めることもできる。また、金属板７０と不透明樹脂５１Ｋとの間には、両者間の熱伝導を避けるために空隙を設けておくとよいが、充填剤で隙間を埋める場合もある。空間６０をスルーホール１６の真上に設けておいたことにより、導熱性材料である金属板７０がスルーホール１６上に位置するため、発光チップ３０側の熱が金属板７０に伝わった場合には、スルーホール１６を介して基板１０Ｂ下側へ効率よくその熱を逃がせる。 By providing the metal plate 70 in the space 60 in the state of FIG. 10C, the light source integrated photosensor 1F illustrated in FIG. 9 is obtained. A filler may be applied to fill the gap between the metal plate 70 and the opaque resin 51L and between the metal plate 70 and the opaque resin 51K in order to facilitate heat absorption to the metal plate 70. . Further, it is preferable to provide an air gap between the metal plate 70 and the opaque resin 51 K in order to avoid heat conduction between the two, but in some cases the air gap may be filled with a filler. Since the metal plate 70 which is a heat conductive material is positioned on the through hole 16 by providing the space 60 directly above the through hole 16, the heat on the light emitting chip 30 side is transmitted to the metal plate 70. Can efficiently dissipate the heat to the lower side of the substrate 10 B through the through holes 16.

　以上説明した第二の実施形態による作用効果について、図１９を参照して説明する。図１９は、第二の実施形態による光源一体型センサの製造手順を示すフローチャートである。
（１）光源一体型光センサ１Ｆの製造方法は、基板１０Ｂ上の所定領域に受光チップ２０および発光チップ３０をそれぞれ設ける工程（図１９のＳ１）と、受光チップ２０と発光チップ３０との間においてダム材６５を設ける工程（図１９のＳ２）と、受光チップ２０および発光チップ３０以外の領域上に不透明樹脂５１を形成する工程（図１９のＳ３）と、受光チップ２０、発光チップ３０、および不透明樹脂５１の領域上にそれぞれ透明樹脂４１を形成する工程（図１９のＳ４）と、ダム材６５を除去する工程（図１９のＳ５）と、を上記工程順に行うようにした。これにより、透明樹脂４１および不透明樹脂５１を、ダム材６５を除去した位置の左側の透明樹脂４１Ａおよび不透明樹脂５１Ｋと、ダム材６５を除去した位置の右側の透明樹脂４１Ｂおよび不透明樹脂５１Ｌとに、簡単に分離できる。 The operation and effect according to the second embodiment described above will be described with reference to FIG. FIG. 19 is a flowchart showing a manufacturing procedure of the light source integrated sensor according to the second embodiment.
(1) In the method of manufacturing the light source integrated photosensor 1F, the step of providing the light receiving chip 20 and the light emitting chip 30 in a predetermined area on the substrate 10B (S1 in FIG. 19); 19 (step S2 in FIG. 19), forming opaque resin 51 on the area other than the light receiving chip 20 and the light emitting chip 30 (S3 in FIG. 19), the light receiving chip 20, the light emitting chip 30, The step of forming the transparent resin 41 on the area of the opaque resin 51 (S4 in FIG. 19) and the step of removing the dam material 65 (S5 in FIG. 19) are performed in the order of the above steps. Thereby, the transparent resin 41 and the opaque resin 51 are formed by the transparent resin 41A and the opaque resin 51K on the left side of the position where the dam material 65 is removed and the transparent resin 41B and the opaque resin 51L on the right side where the dam material 65 is removed. , Easy to separate.

（２）ダム材６５を除去する工程（図１９のＳ５）の後、さらに図１０(c)の空間６０の中に金属板７０を設け、発光チップ３０側から金属板７０へ伝わった熱に関しては、直下のスルーホール１６を介して基板１０Ｂの下面側パターン１７（図９）へ放熱するようにした。金属板７０を設けて放熱効果を高めたことにより、発光チップ３０側から受光チップ２０側への熱伝導が緩和される。このように、熱による特性の劣化を抑えた光源一体型光センサ１Ｆを提供できる。 (2) After the step of removing the dam material 65 (S5 in FIG. 19), the metal plate 70 is further provided in the space 60 of FIG. 10C and the heat transmitted from the light emitting chip 30 side to the metal plate 70 The heat is dissipated to the lower surface side pattern 17 (FIG. 9) of the substrate 10B through the through hole 16 immediately below. By providing the metal plate 70 to enhance the heat radiation effect, the heat conduction from the light emitting chip 30 side to the light receiving chip 20 side is relaxed. Thus, it is possible to provide a light source integrated photosensor 1F in which the deterioration of the characteristics due to heat is suppressed.

（３）上記光源一体型光センサ１Ｆの製造方法において、不透明樹脂５１には断熱性材料を用いるようにしたので、発光チップ３０から受光チップ２０を覆う透明樹脂４１Ａへの熱伝導を効果的に緩和する光源一体型光センサ１Ｆを提供できる。 (3) In the method of manufacturing the light source integrated photosensor 1F, since the heat insulating material is used as the opaque resin 51, the heat conduction from the light emitting chip 30 to the transparent resin 41A covering the light receiving chip 20 is effectively performed. It is possible to provide a light source integrated optical sensor 1F that alleviates.

（変形例９）
　図１０(c)の空間６０内へ金属板７０を実装することなく、図１０(c)の状態の光源一体型光センサとしてもよい。金属板７０を実装しなくても、空間６０を設けたことによって発光チップ３０側から受光チップ２０側への熱伝導が緩和されるため、受光チップ２０を覆う透明樹脂４１Ａの表面が熱により変形したり、透明樹脂４１Ａが変色したりすることを防止できる。なお、変形例９の場合は、空間６０内へ外光が入射されたとしても、不透明樹脂５１Ｋによって受光チップ２０が受光しないように遮光される。 (Modification 9)
Instead of mounting the metal plate 70 in the space 60 of FIG. 10C, it may be a light source integrated optical sensor in the state of FIG. Even if the metal plate 70 is not mounted, heat conduction from the light emitting chip 30 to the light receiving chip 20 is alleviated by providing the space 60, so the surface of the transparent resin 41A covering the light receiving chip 20 is deformed by heat. And the transparent resin 41A can be prevented from being discolored. In the case of the ninth modification, even if external light is incident into the space 60, the light receiving chip 20 is shielded by the opaque resin 51K so as not to receive light.

＜第三の実施形態＞
　図１１は、本発明の第三の実施形態による光源一体型光センサ１Ｇの断面図である。図１１による光源一体型光センサ１Ｇは、上述した光源一体型光センサ１Ｆと比べて、発光チップ３０と受光チップ２０との間に金属板７０（または空間６０）を設けない点、基板１０に放熱用のスルーホール１６を設けていない点、受光チップ２０の開口部（受光部）の周囲を不透明樹脂５１Ｊ、５１Ｋで囲んだ点で異なる。不透明樹脂５１Ｊ、５１Ｋは、後述する透明樹脂４１を形成する際のマスクとして用いられる。 Third Embodiment
FIG. 11 is a cross-sectional view of a light source integrated light sensor 1G according to a third embodiment of the present invention. The light source integrated photo sensor 1G according to FIG. 11 is different from the light source integrated photo sensor 1F in that the metal plate 70 (or the space 60) is not provided between the light emitting chip 30 and the light receiving chip 20. The difference is that the through hole 16 for heat dissipation is not provided, and the periphery of the opening (light receiving portion) of the light receiving chip 20 is surrounded by the opaque resins 51J and 51K. The opaque resins 51J and 51K are used as masks when forming the transparent resin 41 described later.

　上述した光源一体型光センサ１Ｇの製造手順について、図１２を参照して説明する。図１２において、パターンが形成されている回路基板１０の上面の所定位置に受光チップ２０をダイマウントする。発光チップ３０を、スルーホール１５と接続されているパターン上にダイマウントする。続いて、受光チップ２０の複数の電極と、基板１０のパターン１１、１２および他のパターンとの間をそれぞれボンディングワイヤ２１、２２、および不図示のボンディングワイヤでボンディング接続する。また、発光チップ３０の上側の電極と、基板１０の所定パターンとの間をボンディングワイヤ３１によってボンディング接続する。 The manufacturing procedure of the light source integrated type optical sensor 1G mentioned above is demonstrated with reference to FIG. In FIG. 12, the light receiving chip 20 is die-mounted at a predetermined position on the upper surface of the circuit board 10 on which a pattern is formed. The light emitting chip 30 is die-mounted on the pattern connected to the through hole 15. Subsequently, the plurality of electrodes of the light receiving chip 20 and the patterns 11 and 12 and other patterns of the substrate 10 are bonded by bonding wires 21 and 22 and bonding wires (not shown), respectively. Further, the upper electrode of the light emitting chip 30 and the predetermined pattern of the substrate 10 are bonded by bonding wires 31.

　さらに、受光チップ２０の開口部（入射口）の周囲を囲むように不透明樹脂５１Ｊおよび５１Ｋを用いてダム材を形成する。不透明樹脂５１Ｊ、５１Ｋには、熱伝導率が低い断熱性材料を用いる。 Further, a dam material is formed using opaque resins 51J and 51K so as to surround the periphery of the opening (incident opening) of the light receiving chip 20. For the opaque resins 51J and 51K, a heat insulating material having a low thermal conductivity is used.

　図１２の状態で、基板１０および受光チップ２０、発光チップ３０の上から透明樹脂４１を塗布する。ダム材として不透明樹脂５１Ｊおよび５１Ｋを設けておいたことにより、透明樹脂４１は、図１１に示すように、ダム材の内側で受光チップ２０の開口部（受光部）を覆う領域４１Ａと、ダム材の外側の領域４１Ｂとに分離される。 In the state of FIG. 12, the transparent resin 41 is applied over the substrate 10, the light receiving chip 20, and the light emitting chip 30. By providing the opaque resins 51J and 51K as the dam material, as shown in FIG. 11, the transparent resin 41 has a region 41A covering the opening (light receiving portion) of the light receiving chip 20 inside the dam material, and the dam It is separated into the outer region 41B of the material.

　以上説明した第三の実施形態による作用効果について、図２２を参照して説明する。図２２は、第三の実施形態による光源一体型センサの製造手順を示すフローチャートである。
（１）光源一体型光センサ１Ｇの製造方法は、基板１０上の所定領域に受光チップ２０および発光チップ３０をそれぞれ設ける工程（図２２のＳ３１）と、受光チップ２０上において入射開口部を囲むように不透明樹脂５１Ｊ，５１Ｋを形成する工程（図２２のＳ３２）と、不透明樹脂５１Ｊ，５１Ｋの内側および外側それぞれに透明樹脂４１を形成する工程（図２２のＳ３３）と、を上記工程順に行うようにした。これにより、透明樹脂４１は、上記不透明樹脂５１Ｊ，５１Ｋの内側の透明樹脂４１Ａと、不透明樹脂５１Ｊ，５１Ｋの外側の透明樹脂４１Ｂとに分離されることから、発光チップ３０から受光チップ２０を覆う透明樹脂４１Ａへの熱伝導が緩和される。この結果、発光チップ３０からの熱による特性の劣化を抑えた光源一体型光センサ１Ｇを提供できる。 The operation and effect of the third embodiment described above will be described with reference to FIG. FIG. 22 is a flowchart showing a manufacturing procedure of the light source integrated sensor according to the third embodiment.
(1) In the method of manufacturing the light source integrated photosensor 1G, the step of providing the light receiving chip 20 and the light emitting chip 30 in a predetermined area on the substrate 10 (S31 in FIG. 22) and the incident opening on the light receiving chip 20 Thus, the steps of forming the opaque resins 51J and 51K (S32 in FIG. 22) and the steps of forming the transparent resin 41 on the inside and outside of the opaque resins 51J and 51K (S33 in FIG. 22) are performed in the order of the above steps I did it. As a result, the transparent resin 41 is separated into the transparent resin 41A on the inner side of the above-mentioned opaque resins 51J and 51K and the transparent resin 41B on the outer side of the opaque resins 51J and 51K. Heat conduction to the transparent resin 41A is alleviated. As a result, it is possible to provide a light source integrated photo sensor 1G in which the deterioration of the characteristics due to the heat from the light emitting chip 30 is suppressed.

（２）上記光源一体型光センサ１Ｇの製造方法において、不透明樹脂５１Ｊ、５１Ｋには、断熱性材料を用いるようにしたので、発光チップ３０から受光チップ２０を覆う透明樹脂４１Ａへの熱伝導を効果的に緩和する光源一体型光センサ１Ｇを提供できる。 (2) In the manufacturing method of the light source integrated photosensor 1G, since the heat insulating material is used for the opaque resins 51J and 51K, heat conduction from the light emitting chip 30 to the transparent resin 41A covering the light receiving chip 20 is It is possible to provide a light source integrated optical sensor 1G that can be effectively mitigated.

＜第四の実施形態＞
　図１３は、本発明の第四の実施形態による光源一体型光センサ１Ｈの断面図である。図１３による光源一体型光センサ１Ｈは、上述した光源一体型光センサ１Ｇと比べて、受光チップ２０の開口部（受光部）を透明樹脂４１Ｃでレンズ状に封止した点で異なる。 Fourth Embodiment
FIG. 13 is a cross-sectional view of a light source integrated light sensor 1H according to a fourth embodiment of the present invention. The light source integrated photo sensor 1H according to FIG. 13 is different from the above-described light source integrated photo sensor 1G in that the opening (light receiving portion) of the light receiving chip 20 is sealed in a lens shape with the transparent resin 41C.

　上述した光源一体型光センサ１Ｈの製造手順について、図１４を参照して説明する。図１４において、パターンが形成されている回路基板１０の上面の所定位置に受光チップ２０をダイマウントする。発光チップ３０を、スルーホール１５と接続されているパターン上にダイマウントする。続いて、受光チップ２０の複数の電極と、基板１０のパターン１１、１２および他のパターンとの間をそれぞれボンディングワイヤ２１、２２、および不図示のボンディングワイヤでボンディング接続する。また、発光チップ３０の上側の電極と、基板１０の所定パターンとの間をボンディングワイヤ３１によってボンディング接続する。 A manufacturing procedure of the light source integrated optical sensor 1H described above will be described with reference to FIG. In FIG. 14, the light receiving chip 20 is die-mounted at a predetermined position on the upper surface of the circuit board 10 on which a pattern is formed. The light emitting chip 30 is die-mounted on the pattern connected to the through hole 15. Subsequently, the plurality of electrodes of the light receiving chip 20 and the patterns 11 and 12 and other patterns of the substrate 10 are bonded by bonding wires 21 and 22 and bonding wires (not shown), respectively. Further, the upper electrode of the light emitting chip 30 and the predetermined pattern of the substrate 10 are bonded by bonding wires 31.

　さらに、ポッティングによりレンズ状に盛り上げた透明樹脂４１Ｃで、受光チップ２０の開口部（受光部）を封止する。また、ポッティングによりレンズ状に盛り上げた透明樹脂４１Ｄで、発光チップ３０の開口部（発光部）を封止する。これらは、それぞれレンズ効果を有する。 Further, the opening (light receiving portion) of the light receiving chip 20 is sealed with the transparent resin 41C raised in a lens shape by potting. Further, the opening (light emitting portion) of the light emitting chip 30 is sealed with the transparent resin 41D raised in a lens shape by potting. Each of these has a lens effect.

　図１４の状態で、基板１０および受光チップ２０、発光チップ３０の上から不透明樹脂５１を塗布する。先にポッティングした透明樹脂４１Ｃおよび４１Ｄをそれぞれ避けて塗布することにより、透明樹脂４１Ｃ、４１Ｄと、不透明樹脂５１Ｊ、５１Ｋ、５１Ｌとを分離して形成する。このとき、不透明樹脂５１Ｊ、５１Ｋ、５１Ｌを透明樹脂４１Ｃ、４１Ｄより高く形成する。 In the state of FIG. 14, the opaque resin 51 is applied over the substrate 10, the light receiving chip 20, and the light emitting chip 30. The transparent resins 41C and 41D and the opaque resins 51J, 51K, and 51L are separately formed by applying them by avoiding the transparent resins 41C and 41D, which are previously potted, respectively. At this time, the opaque resins 51J, 51K, and 51L are formed higher than the transparent resins 41C and 41D.

　以上説明した第四の実施形態による作用効果について、図２０を参照して説明する。図２０は、第四の実施形態による光源一体型センサの製造手順を示すフローチャートである。
（１）光源一体型光センサ１Ｈの製造方法は、基板１０上の所定領域に受光チップ２０および発光チップ３０をそれぞれ設ける工程（図２０のＳ１１）と、受光チップ２０および発光チップ３０の領域上にそれぞれ透明樹脂４１Ｃ、４１Ｄを形成する工程（図２０のＳ１２）と、受光チップ２０および発光チップ３０以外の領域上に不透明樹脂５１Ｊ、５１Ｋ、５１Ｌを透明樹脂４１Ｃ、４１Ｄより高く形成する工程（図２０のＳ１３）と、を上記工程順に行うようにした。これにより、透明樹脂４１Ｃは、上記不透明樹脂５１Ｊ，５１Ｋから分離されることから、発光チップ３０から受光チップ２０を覆う透明樹脂４１Ｃへの熱伝導が緩和される。この結果、発光チップ３０からの熱による特性の劣化を抑えた光源一体型光センサ１Ｈを提供できる。樹脂は、熱による変形や変色が生じやすいので、発光チップ３０から受光チップ２０を覆う透明樹脂４１Ｃへの熱伝導を緩和することが重要である。 The operation and effect of the fourth embodiment described above will be described with reference to FIG. FIG. 20 is a flowchart showing a manufacturing procedure of the light source integrated sensor according to the fourth embodiment.
(1) In the method of manufacturing the light source integrated photosensor 1H, the step of providing the light receiving chip 20 and the light emitting chip 30 in a predetermined area on the substrate 10 (S11 in FIG. 20); Forming the transparent resin 41C and 41D respectively (S12 in FIG. 20), and forming the opaque resin 51J, 51K and 51L higher than the transparent resin 41C and 41D on the area other than the light receiving chip 20 and the light emitting chip 30 (S12 in FIG. Step S13) in FIG. 20 is performed in the order of the above steps. Thereby, since the transparent resin 41C is separated from the above-mentioned opaque resins 51J and 51K, the heat conduction from the light emitting chip 30 to the transparent resin 41C covering the light receiving chip 20 is relaxed. As a result, it is possible to provide a light source integrated photosensor 1H in which the deterioration of the characteristics due to the heat from the light emitting chip 30 is suppressed. Since the resin is easily deformed or discolored by heat, it is important to reduce the heat conduction from the light emitting chip 30 to the transparent resin 41C covering the light receiving chip 20.

（２）上記光源一体型光センサ１Ｈの製造方法において、透光部材に樹脂４１Ｃを用いたので、ガラス材に比べて軽量で安価に製造できる。 (2) In the method of manufacturing the light source integrated optical sensor 1H, since the resin 41C is used as the light transmitting member, it can be manufactured lighter and cheaper than the glass material.

（変形例１０）
　上述した図１３の光源一体型光センサ１Ｈを、変形例１０の製造手順によって製造することもできる。図２１は、変形例１０の製造手順を示すフローチャートである。変形例１０では、透明樹脂４１Ｃおよび４１Ｄをポッティングする（図２１のＳ２３）前に不透明樹脂５１を塗布する点（図２１のＳ２２）が、第四の実施形態の手順と異なる。変形例１０の製造手順を図１５を参照して説明する。 (Modification 10)
The light source integrated photosensor 1H of FIG. 13 described above can also be manufactured by the manufacturing procedure of the tenth modification. FIG. 21 is a flowchart showing the manufacturing procedure of the modification 10. The modification 10 is different from the procedure of the fourth embodiment in that the opaque resin 51 is applied (S22 in FIG. 21) before potting the transparent resins 41C and 41D (S23 in FIG. 21). The manufacturing procedure of the modification 10 will be described with reference to FIG.

　図１５において、透明樹脂４１Ｃのポッティング予定位置、および透明樹脂４１Ｄのポッティング予定位置を避けて、基板１０および受光チップ２０、発光チップ３０の上から不透明樹脂５１を塗布する（Ｓ２２）。次に、透明樹脂４１Ｃおよび４１Ｄをそれぞれレンズ状にポッティングすることにより、受光チップ２０の開口部（受光部）および発光チップ３０の開口部（発光部）を封止する（Ｓ２３）。このとき、透明樹脂４１Ｃ、４１Ｄを不透明樹脂５１より低く形成する。 In FIG. 15, the opaque resin 51 is applied from above the substrate 10, the light receiving chip 20, and the light emitting chip 30 while avoiding the potting planned position of the transparent resin 41C and the potted planned position of the transparent resin 41D (S22). Next, the transparent resin 41C and 41D are potted in a lens shape, thereby sealing the opening (light receiving portion) of the light receiving chip 20 and the opening (light emitting portion) of the light emitting chip 30 (S23). At this time, the transparent resins 41 C and 41 D are formed lower than the opaque resin 51.

　変形例１０の製造手順でも、受光チップ２０の受光部をレンズ状に封止した透明樹脂４１Ｃを、他の封止部材である不透明樹脂５１Ｋと分離できるので、発光チップ３０側から透明樹脂４１Ｃへの熱伝導が緩和される。そのため、受光チップ２０の受光部を覆う透明樹脂４１Ｃの表面が熱により変形したり、透明樹脂４１Ｃが変色したりすることを防止できる。 Also in the manufacturing procedure of Modified Example 10, since the transparent resin 41C in which the light receiving portion of the light receiving chip 20 is sealed in a lens shape can be separated from the opaque resin 51K which is another sealing member, the transparent resin 41C from the light emitting chip 30 side Heat conduction is relaxed. Therefore, it is possible to prevent the surface of the transparent resin 41C covering the light receiving portion of the light receiving chip 20 from being deformed by heat and the transparent resin 41C from being discolored.

＜第五の実施形態＞
　図１６は、本発明の第五の実施形態による光源一体型光センサ１Ｉの断面図である。図１６による光源一体型光センサ１Ｉは、上述した光源一体型光センサ１Ｈと比べて、受光チップ２０の開口部（受光部）および発光チップ３０の開口部（発光部）上に透明樹脂４１をポッティングしない点、および受光チップ２０の開口部（受光部）上にガラス材８０を設ける点で異なる。 Fifth Embodiment
FIG. 16 is a cross-sectional view of a light source integrated light sensor 1I according to a fifth embodiment of the present invention. The light source integrated optical sensor 1I according to FIG. 16 has a transparent resin 41 on the opening (light receiving part) of the light receiving chip 20 and the opening (light emitting part) of the light emitting chip 30 as compared to the light source integrated optical sensor 1H described above. The difference is that the glass material 80 is provided on the opening (light receiving portion) of the light receiving chip 20, not potting.

　上述した光源一体型光センサ１Ｉの製造手順について、図１６および図１７を参照して説明する。図１７において、パターンが形成されている回路基板１０の上面の所定位置に受光チップ２０をダイマウントする。発光チップ３０を、スルーホール１５と接続されているパターン上にダイマウントする。続いて、受光チップ２０の複数の電極と、基板１０のパターン１１、１２および他のパターンとの間をそれぞれボンディングワイヤ２１、２２、および不図示のボンディングワイヤでボンディング接続する。また、発光チップ３０の上側の電極と、基板１０の所定パターンとの間をボンディングワイヤ３１によってボンディング接続する。さらに、受光チップ２０の開口部（受光部）の上に、ガラス材８０を接着する。 The manufacturing procedure of the light source integrated optical sensor 1I mentioned above is demonstrated with reference to FIG. 16 and FIG. In FIG. 17, the light receiving chip 20 is die-mounted at a predetermined position on the upper surface of the circuit board 10 on which a pattern is formed. The light emitting chip 30 is die-mounted on the pattern connected to the through hole 15. Subsequently, the plurality of electrodes of the light receiving chip 20 and the patterns 11 and 12 and other patterns of the substrate 10 are bonded by bonding wires 21 and 22 and bonding wires (not shown), respectively. Further, the upper electrode of the light emitting chip 30 and the predetermined pattern of the substrate 10 are bonded by bonding wires 31. Further, the glass material 80 is bonded onto the opening (light receiving portion) of the light receiving chip 20.

　図１８において、ガラス材８０、および発光チップ３０の開口部（発光部）を避けて、基板１０および受光チップ２０、発光チップ３０の上から不透明樹脂５１Ｊ、５１Ｋ、および５１Ｌを塗布する。このとき、不透明樹脂５１Ｊ、５１Ｋ、５１Ｌを発光チップ３０より高くする。そして、最後に透明樹脂４１を塗布してコーティングし、図１６に例示したように、発光チップ３０を覆う領域４１Ｂと、左端の領域４１Ａとを形成する。 In FIG. 18, opaque resins 51 J, 51 K, and 51 L are applied from above the substrate 10, the light receiving chip 20, and the light emitting chip 30 while avoiding the glass member 80 and the opening (light emitting portion) of the light emitting chip 30. At this time, the opaque resins 51J, 51K, and 51L are made higher than the light emitting chip 30. Finally, a transparent resin 41 is applied and coated to form a region 41B covering the light emitting chip 30 and a region 41A at the left end as illustrated in FIG.

　以上説明した第五の実施形態による作用効果について、図２３を参照して説明する。図２３は、第五の実施形態による光源一体型センサの製造手順を示すフローチャートである。この製造方法では、基板１０上の所定領域に受光チップ２０および発光チップ３０をそれぞれ設ける工程（図２３のＳ４１）と、受光チップ２０の領域上にガラス材８０を設ける工程（図２３のＳ４２）と、ガラス材８０および発光チップ３０以外の領域上に、不透明樹脂５１Ｊ，５１Ｋ、５１Ｌを発光チップ３０より高く形成する工程（図２３のＳ４３）と、発光チップ３０および不透明樹脂５１Ｊ，５１Ｋ、５１Ｌの領域上に透明樹脂４１Ａ、４１Ｂを形成する工程（図２３のＳ４４）と、を前記工程順に行うので、発光チップ３０側からガラス材８０へ熱が伝わったとしても、透明樹脂の場合と異なり、変形や変色が生じない。そのため、発光チップ３０からの熱による特性の劣化を抑えた光源一体型光センサ１Ｉを提供できる。 The operation and effect of the fifth embodiment described above will be described with reference to FIG. FIG. 23 is a flowchart showing the manufacturing procedure of the light source integrated sensor according to the fifth embodiment. In this manufacturing method, the step of respectively providing the light receiving chip 20 and the light emitting chip 30 in a predetermined region on the substrate 10 (S41 in FIG. 23) and the step of providing the glass material 80 in the region of the light receiving chip 20 (S42 in FIG. 23) And forming the opaque resin 51J, 51K, 51L higher than the light emitting chip 30 on the area other than the glass material 80 and the light emitting chip 30 (S43 in FIG. 23), the light emitting chip 30 and the opaque resin 51J, 51K, 51L. The steps of forming the transparent resins 41A and 41B (S44 in FIG. 23) on the area of the above are performed in the order of the above steps, so even if heat is transmitted from the light emitting chip 30 side to the glass material 80, unlike the case of the transparent resin. , No deformation or discoloration occurs. Therefore, it is possible to provide a light source integrated photosensor 1I in which the deterioration of the characteristics due to the heat from the light emitting chip 30 is suppressed.

　上記では、種々の実施の形態および変形例を説明したが、本発明はこれらの内容に限定されるものではない。各実施形態および各変形例の構成は、適宜組み合わせても構わない。本発明の技術的思想の範囲内で考えられるその他の態様も本発明の範囲内に含まれる。 Although various embodiments and modifications have been described above, the present invention is not limited to these contents. The configurations of the embodiments and the modifications may be combined as appropriate. Other embodiments considered within the scope of the technical idea of the present invention are also included within the scope of the present invention.

　次の優先権基礎出願の開示内容は引用文としてここに組み込まれる。
　日本国特許出願２０１２年第１０５９４０号（２０１２年５月７日出願）
　日本国特許出願２０１２年第１０５９４１号（２０１２年５月７日出願）
　日本国特許出願２０１３年第５６４号（２０１３年１月７日出願） The disclosure content of the following priority basic application is incorporated herein by reference.
Japanese Patent Application 2012 No. 105 940 (filed on May 7, 2012)
Japanese Patent Application 2012 No. 105941 (filed on May 7, 2012)
Japanese Patent Application 2013 No. 564 (filed on January 7, 2013)

Claims (11)

　基板上の所定領域に設けられた受光部と、
　前記基板上の前記受光部と異なる領域に設けられた発光部と、
　前記受光部上に当該受光部を覆うように設けられた第１透光部材と、
　前記第１透光部材と空間を介して設けられ、前記発光部上に当該発光部を覆うように設けられた第２透光部材と、
　前記空間の一部に形成された遮光部材と、
を備える光源一体型光センサ。 A light receiving unit provided in a predetermined area on the substrate;
A light emitting unit provided in an area different from the light receiving unit on the substrate;
A first light transmitting member provided on the light receiving portion to cover the light receiving portion;
A second light transmitting member which is provided via the first light transmitting member and a space, and which is provided on the light emitting portion so as to cover the light emitting portion;
A light shielding member formed in a part of the space;
A light source integrated light sensor comprising: 　請求項１に記載の光源一体型光センサにおいて、
　前記遮光部材は、断熱性材料によって構成される光源一体型光センサ。 In the light source integrated light sensor according to claim 1,
The light source integrated optical sensor, wherein the light shielding member is made of a heat insulating material. 　請求項１に記載の光源一体型光センサにおいて、
　前記遮光部材は、導熱性材料によって構成される光源一体型光センサ。 In the light source integrated light sensor according to claim 1,
The light source integrated light sensor, wherein the light shielding member is made of a heat conductive material. 　請求項３に記載の光源一体型光センサにおいて、
　前記導熱性材料は、前記基板に設けられているスルーホール上に位置する光源一体型光センサ。 In the light source integrated optical sensor according to claim 3,
The light source integrated light sensor, wherein the heat conductive material is located on a through hole provided in the substrate. 　請求項１～４のいずれか一項に記載の光源一体型光センサにおいて、
　少なくとも前記第１透光部材は、樹脂によって形成されている光源一体型光センサ。 The light source integrated optical sensor according to any one of claims 1 to 4,
A light source integrated light sensor, wherein at least the first light transmitting member is made of resin. 　基板上の所定領域に受光部および発光部をそれぞれ設け、
　前記受光部と前記発光部との間においてマスク部材を設け、
　前記受光部および前記発光部以外の領域上に遮光部材を形成し、
　前記受光部、前記発光部、および前記遮光部材の領域上にそれぞれ透光部材を形成し、
　前記マスク部材を除去する光源一体型光センサの製造方法。 Providing a light receiving unit and a light emitting unit in predetermined areas on the substrate;
Providing a mask member between the light receiving unit and the light emitting unit;
Forming a light shielding member on an area other than the light receiving unit and the light emitting unit;
A light transmitting member is formed on the area of the light receiving unit, the light emitting unit, and the light shielding member,
A manufacturing method of a light source integrated type photosensor which removes the mask member. 　基板上の所定領域に受光部および発光部をそれぞれ設け、
　前記受光部および前記発光部の領域上にそれぞれ透光部材を形成し、
　前記受光部および前記発光部以外の領域上に、遮光部材を前記透光部材より高く形成する光源一体型光センサの製造方法。 Providing a light receiving unit and a light emitting unit in predetermined areas on the substrate;
Forming a light transmitting member on the light receiving portion and the light emitting portion respectively;
A manufacturing method of a light source integrated photo sensor which forms a light shielding member higher than the light transmission member on areas other than the light receiving portion and the light emitting portion. 　基板上の所定領域に受光部および発光部をそれぞれ設け、
　前記受光部および前記発光部以外の領域上に遮光部材を形成し、
　前記受光部および前記発光部の領域上に、それぞれ透光部材を前記遮光部材より低く形成する光源一体型光センサの製造方法。 Providing a light receiving unit and a light emitting unit in predetermined areas on the substrate;
Forming a light shielding member on an area other than the light receiving unit and the light emitting unit;
A manufacturing method of a light source integrated photo sensor which forms a light transmission member lower than the light shielding member on the area of the light receiving portion and the light emitting portion, respectively. 　基板上の所定領域に受光部および発光部をそれぞれ設け、
　前記受光部上において入射口を囲むように遮光部材を形成し、
　前記遮光部材の内側および外側それぞれの領域上に透光部材を形成する光源一体型光センサの製造方法。 Providing a light receiving unit and a light emitting unit in predetermined areas on the substrate;
A light shielding member is formed on the light receiving portion so as to surround the entrance;
A manufacturing method of a light source integrated photo sensor which forms a translucent member on each field of the inner side of said shade member, and the outside. 　基板上の所定領域に受光部および発光部をそれぞれ設け、
　前記受光部の領域上にガラス部材を設け、
　前記ガラス部材および前記発光部以外の領域上に、遮光部材を前記発光部より高く形成し、
　前記発光部および前記遮光部材の領域上に透光部材を形成する光源一体型光センサの製造方法。 Providing a light receiving unit and a light emitting unit in predetermined areas on the substrate;
Providing a glass member on the area of the light receiving unit;
A light shielding member is formed higher than the light emitting portion on the region other than the glass member and the light emitting portion,
A manufacturing method of a light source integrated photo sensor which forms a translucent member on a field of the light emitting part and the light shielding member. 　請求項６～１０のいずれか一項に記載の光源一体型光センサの製造方法において、
　前記遮光部材には、断熱性材料を用いる光源一体型光センサの製造方法。
  In the method of manufacturing a light source integrated optical sensor according to any one of claims 6 to 10,
A manufacturing method of a light source integrated type photosensor using a heat insulation material for said shade member.
PCT/JP2013/052603 2012-05-07 2013-02-05 Light source-integrated optical sensor and method for manufacturing light source-integrated optical sensor Ceased WO2013168442A1 (en)

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JP2013000564A JP5855590B2 (en) 2012-05-07 2013-01-07 Light source integrated light sensor
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