WO2014054082A1 - Semiconductor device, proximity sensor equipped with same, and semiconductor device manufacturing method - Google Patents
Semiconductor device, proximity sensor equipped with same, and semiconductor device manufacturing method Download PDFInfo
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- WO2014054082A1 WO2014054082A1 PCT/JP2012/006436 JP2012006436W WO2014054082A1 WO 2014054082 A1 WO2014054082 A1 WO 2014054082A1 JP 2012006436 W JP2012006436 W JP 2012006436W WO 2014054082 A1 WO2014054082 A1 WO 2014054082A1
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- light
- emitting element
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
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- H10W74/10—
Definitions
- the present invention relates to a semiconductor device in which a light emitting element and a light receiving element are mounted on a common substrate, a proximity sensor provided with the semiconductor device, and a method for manufacturing the semiconductor device.
- an optical device in which a light shielding member is disposed between a light emitting element and a light receiving element is known as this type of semiconductor device (see Patent Document 1).
- This opto-device seals a substrate, a light emitting element and a light receiving element mounted on the substrate, a light emitting element and a light receiving element with a translucent resin, and a light transmitting element and a light receiving element facing the light emitting element.
- a mold part including a receiving lens; a groove formed between the transmitting lens and the receiving lens in the mold part; and a light shielding member that is provided in the groove and shields light from the light receiving element. .
- Light emitted from the light emitting element and traveling through the mold portion toward the light receiving element is blocked by a light blocking member provided in the groove. Accordingly, it is possible to prevent the light from flowing from the light emitting element to the light receiving element in the mold part without requiring a new mold or the like.
- the present invention relates to a semiconductor device capable of effectively preventing light from sneaking from a light emitting element to a light receiving element while maintaining miniaturization and ease of manufacture, and a proximity sensor including the semiconductor device and a method of manufacturing the semiconductor device The issue is to provide.
- the semiconductor device of the present invention is a semiconductor device in which a light emitting element and a light receiving element are mounted on a common package substrate, and at least one of the light emitting element and the light receiving element is immersed in a concave groove formed in the package substrate. It is implemented in.
- the emitted light is appropriately reflected in the groove and emitted from the opening side of the groove. For this reason, the emitted light from the light emitting element has directivity, and the light (the amount of light) reaching the light receiving element as noise light can be suppressed. Further, for example, when light emission and light reception are performed on the object through the panel body, the emitted light of the light emitting element having directivity enters the panel body at a deep angle. For this reason, noise light reflected from the panel body can also be suppressed. In addition, the efficiency of extracting emitted light from the light emitting element can be improved by the concave groove.
- the light receiving element when the light receiving element is mounted in the concave groove, the light emitted from the light emitting element toward the light receiving element passes through the opening, so that the amount of light reaching the light receiving element as noise light can be suppressed.
- the groove formed in the package substrate can be easily drilled with a drill bit or the like. Therefore, it is possible to effectively prevent light (noise light) from wrapping around from the light emitting element to the light receiving element while maintaining the miniaturization and the ease of manufacture.
- the “package substrate” is a concept including a lead frame.
- the concave groove is preferably formed in an inverted truncated cone shape, and at least one of the light emitting element and the light receiving element is preferably mounted on the groove bottom of the concave groove.
- the groove can be easily formed by a commercially available drill bit having a truncated cone shape.
- the light emitting element and / or the light receiving element can be easily mounted by an existing technique.
- the light emitting element and the light receiving element are preferably sealed by potting with a sealing resin.
- the sealing resin shrinks when it is cured. At that time, the thick part contracts greatly, and the small part contracts small. According to said structure, the recessed groove part of sealing resin shrink
- the reflected light from the object is focused on the surface of the recessed sealing resin, reaches the light receiving surface of the light receiving element, and is detected. Further, as long as the sealing function is not impaired, the thickness of the sealing resin (device) can be freely adjusted, and customization can be easily performed.
- the light emitting element and the light receiving element are sealed by molding with a sealing resin, and the surface of the sealing resin is formed in a concave lens shape.
- the emitted light of the light emitting element is refracted in the direction away from the light receiving element as a whole on the surface of the sealing resin. For this reason, for example, when a panel body is provided on the front surface, the light on the light receiving element side of the refracted light is incident on the panel body at a deep angle, and its reflection is suppressed. Therefore, light reaching the light receiving element as noise light can be suppressed.
- the light emitting element and the light receiving element are preferably sealed by molding with a sealing resin, and the surface of the sealing resin is preferably formed in an uneven shape.
- the light emitted from the light emitting element, reflected by the surface of the sealing resin (interface with air) and directed to the light receiving element, in particular, the light reflected on the recess does not go to the light receiving element. Accordingly, noise light to the light receiving element can be suppressed.
- a proximity sensor includes the above-described semiconductor device in which at least a light-emitting element of a light-emitting element and a light-receiving element is mounted so as to be immersed in a concave groove formed in a package substrate, and a translucent panel body It is characterized by sensing the relative approach of an object through
- radiated light having directivity from the light emitting element is incident on the panel body at a deep incident angle. For this reason, reflection from the panel body is suppressed, and accordingly, noise light incident on the light receiving element based on this reflection can be reduced. Therefore, erroneous detection and the like can be prevented.
- the panel body is mounted on the mobile terminal and the panel body is a touch panel of the mobile terminal.
- the method for manufacturing a semiconductor device is the above-described method for manufacturing a semiconductor device, wherein a concave groove in which at least one of a light emitting element and a light receiving element is mounted is formed on a package substrate immediately before the formation of a wiring pattern.
- a potting step of potting the light emitting element and the light receiving element with a sealing resin after the bonding step is the above-described method for manufacturing a semiconductor device, wherein a concave groove in which at least one of a light emitting element and a light receiving element is mounted is formed on a package substrate immediately before the formation of a wiring pattern.
- a groove forming step is added to the previous manufacturing process.
- the concave groove formed in the package substrate can be easily formed with a drill bit or the like. Therefore, it is possible to effectively prevent light (noise light) from wrapping around from the light emitting element to the light receiving element while maintaining the miniaturization and the ease of manufacture.
- FIG. 1 is a cross-sectional view of a semiconductor device according to a first embodiment. It is sectional drawing of the semiconductor device which concerns on 2nd Embodiment. It is sectional drawing of the semiconductor device which concerns on 3rd Embodiment. It is explanatory drawing which shows the groove
- This semiconductor device includes a light emitting element and a light receiving element, and is used as a proximity sensor.
- this proximity sensor is mounted on a portable terminal (smart phone) and detects whether or not the user is talking. For this reason, in order to reliably receive the weak reflected light reflected from the human body, the light is prevented from wrapping around from the light emitting element to the light receiving element as much as possible.
- FIG. 1 is a cross-sectional view when the semiconductor device according to the embodiment is mounted on a smartphone as a proximity sensor.
- the smartphone 1 is provided with a touch panel 2 over the entire front surface thereof, and a receiver 4 is disposed inside the touch panel 2 so as to be mounted on a circuit board 3.
- a proximity sensor 5 is disposed adjacent to the receiver 4 so as to be mounted on the circuit board 3.
- the proximity sensor 5 of the embodiment is disposed in the gap between the touch panel 2 and the circuit board 3 and emits infrared rays (in the embodiment, near infrared rays) that serve as detection light via the touch panel 2.
- infrared rays in the embodiment, near infrared rays
- the infrared rays radiated from the proximity sensor 5 are reflected by the portion of the ear E or the like and a part of the infrared rays is reflected on the proximity sensor 5.
- incident light infrared rays
- incident light is photoelectrically converted and amplified, and output to a determination circuit (not shown) on the circuit board 3.
- the amount of received light (current value) is compared with a threshold, and when the threshold is exceeded, the human body (ear E) is detected, that is, the call state is detected. Then, when a call state is detected, mode switching that disables the operation of the touch panel 2 is performed.
- the proximity sensor 5 detects an extremely close target (ear E or the like), the light emission amount is suppressed to reduce power consumption, and the light reception amount is extremely small compared to the light emission amount. Must be detected reliably. Therefore, in the semiconductor device 10 of the present embodiment constituting the proximity sensor 5, noise light is reduced as much as possible in order to improve the S / N ratio.
- FIG. 2 is a cross-sectional view of the semiconductor device 10A according to the first embodiment.
- the semiconductor device 10A includes a package substrate 11 composed of a substrate frame and a lead frame (a substrate frame in the embodiment), a light emitting element 12 and a light receiving element having a chip configuration mounted on the package substrate 11. 13 and a translucent sealing resin 14 that seals the light emitting element 12 and the light receiving element 13.
- the light receiving element 13 is mounted (mounted) on the package substrate 11, while the light emitting element 12 is mounted in a concave groove 15 formed in the package substrate 11.
- the package substrate 11 (substrate frame) is made of a glass epoxy or organic material substrate, and on both the front and back surfaces, a light emitting side wiring pattern 21 (electrodes and the like) on which the light emitting element 12 is mounted and conducted, and a light receiving element Light receiving side wiring patterns 22 (electrodes and the like) on which 13 is mounted and conducted are formed. Further, an inverted frustoconical groove 15 is formed in a portion of the package substrate 11 where the light emitting element 12 is mounted. The light emitting element 12 is mounted on a light emitting side wiring pattern 21 (die pad) that also serves as a heat sink provided on the groove bottom 15a of the concave groove 15. A reflective film is preferably formed on the inner peripheral surface of the concave groove 15.
- the light emitting element 12 is composed of a light emitting diode chip that emits infrared rays (near infrared rays) from the light emitting surfaces at both ends. And the electrode pad 12a of the light emitting element 12 and the land 21a of the light emission side wiring pattern 21 are connected by the bonding wire 24 (a gold wire, a copper wire, an aluminum wire, etc.).
- the light emitting element 12 is disposed so as to be completely immersed in the groove 15 formed in the package substrate 11.
- the light emitting element 12 may have an upper surface as a light emitting surface.
- infrared light is reflected from the both ends of the small edge to the inner surface of the groove 12 and emitted from the opening.
- the infrared rays used as detection light are radiated with the radiation angle narrowed down (focused) and directivity.
- the reflection of infrared rays on the upper surface (interface with air) of the sealing resin 14 and the lower surface (interface with air) of the touch panel 2 is suppressed. That is, noise light to the light receiving element 13 is suppressed.
- the light receiving element 13 is composed of a photodiode chip mounted on the package substrate 11 with the upper surface serving as a light receiving surface.
- the electrode pad 13a of the light receiving element 13 and the land 22a of the light receiving side wiring pattern 22 are connected by a bonding wire 26 (gold wire, copper wire, aluminum wire, etc.). Note that a phototransistor may be used instead of the photodiode.
- the sealing resin 14 is made of an epoxy resin or silicon resin that is transparent to infrared rays, and covers the light emitting element 12, the light receiving element 13, and the bonding wires 24 and 26 (sealing).
- the sealing resin 14 may be formed by molding, but the embodiment is formed by potting (details will be described later). That is, the sealing resin 14 is formed by thermosetting the liquid sealing resin 14 that is poured so as to cover the light emitting element 12 and the light receiving element 13.
- the sealing resin 14 has a property of shrinking by thermosetting, and the portion of the concave groove 15 of the thick sealing resin 14 contracts greatly, and the other portion having no thickness contracts small ( (See FIG. 2).
- the concave groove 15 portion of the sealing resin 14 has a concave surface shape with respect to the other portion, that is, a concave lens-like surface shape.
- the emitted light of the light emitting element 12 squeezed by the concave groove 15 is diffused on the surface of the recessed sealing resin 14 and is emitted as detection light having the same spread as when there is no concave groove 15.
- the thickness (resin amount) of the sealing resin 14 can be adjusted by potting so as to be compatible with the smartphone 1 in which the gap width between the touch panel 2 and the circuit board 3 is different. Specifically, as long as the sealing function is not impaired, the thickness of the sealing resin 14 (device) is adjusted so as to make the gap between the touch panel 2 as small as possible.
- the emitted light of the light emitting element 12 is appropriately reflected in the concave groove 15 and emitted from the opening side of the concave groove 15. For this reason, the emitted light from the light emitting element 12 is emitted so as to be reduced, and the amount of light reaching the light receiving element 13 as noise light in the sealing resin 14 can be suppressed. Further, the narrowed radiated light is hard to be reflected on the touch panel 2, and also in this respect, the amount of light reaching the light receiving element 13 as noise light can be suppressed. Therefore, it is possible to effectively prevent the light (noise light) from entering from the light emitting element 12 to the light receiving element 13.
- the concave groove 15 can improve the extraction efficiency of the radiated light from the light emitting element 12.
- the groove 15 formed in the package substrate 11 can be easily drilled with a drill bit or the like. Accordingly, it is possible to effectively prevent light (noise light) from wrapping from the light emitting element 12 to the light receiving element 13 while maintaining miniaturization and ease of manufacture.
- the semiconductor device 10 ⁇ / b> B according to the second embodiment will be described mainly with respect to differences from the first embodiment.
- the light emitting element 12 is mounted (mounted) on the package substrate 11, while the light receiving element 13 is mounted in the concave groove 15 of the package substrate 11.
- the light emitting element 12 is mounted on the light emitting side wiring pattern 21 formed on the package substrate 11, and the light receiving element 13 is received on the groove bottom 15 a of the concave groove 15 so as to be immersed in the concave groove 15.
- the radiated light toward the light receiving element 13 out of the radiated light from the light emitting element 12 passes over the opening of the concave groove 15, and thus the sealing resin 14.
- the amount of light reaching the light receiving element 13 as noise light can be suppressed.
- the reflected light from the object (ear E) is appropriately reflected and converged in the concave groove 15 to reach the light receiving surface of the light receiving element 13, and is received with high light efficiency. Therefore, also in this case, it is possible to effectively prevent the light (noise light) from wrapping from the light emitting element 12 to the light receiving element 13 while maintaining the miniaturization and the ease of manufacture.
- both the light emitting element 12 and the light receiving element 13 are mounted in the groove 15 of the package substrate 11. That is, the light emitting element 12 is mounted on the light emitting side wiring pattern 21 provided on the groove bottom 15 a of the concave groove 15 so as to be immersed in the concave groove 15, and the light receiving element 13 is immersed in the concave groove 15.
- the light receiving side wiring pattern 22 provided on the groove bottom 15 a of the concave groove 15 is mounted.
- the amount of light reaching the light receiving element 13 as noise light from the light emitted from the light emitting element 12 in the sealing resin 14 is suppressed by the respective concave grooves 15. be able to. Therefore, also in this case, it is possible to effectively prevent the light (noise light) from wrapping from the light emitting element 12 to the light receiving element 13 while maintaining the miniaturization and the ease of manufacture.
- a method for manufacturing the semiconductor device 10 (10A) according to the embodiment will be described by taking the first embodiment as an example with reference to FIGS.
- the light-emitting element 12 and the light-receiving element 13 are mounted in a chip, and after the mounting process, the light-emitting element 12 is wire-bonded, and the light-receiving element 13 is wire-bonded.
- the concave groove 15 may be formed in the substrate frame that has been subjected to the front and back plating treatment, The groove 15 may be formed after the pattern formation of the wiring pattern. Further, as shown in FIG. 5, the formation of the groove 15 is preferably performed together with the formation of the through hole 32 using a dedicated drill bit 31. On the other hand, as shown in FIG. 6, when the package substrate 11 is a lead frame (raw material), it is preferable to form the concave groove 15 and both the wiring patterns 21 and 22 simultaneously by etching or the like.
- the light emitting element 12 and the light receiving element 13 are chip-mounted through an adhesive such as silver paste using a known die bonding apparatus.
- the bonding process the light emitting element 12 and the light receiving element 13 are wire-bonded using a known bonding apparatus, for example, by a ball bonding method.
- the sealing resin 14 is potted over the entire upper surface of the package substrate 11 using a dispenser, and then the potted sealing resin 14 is cured by oven heating or the like.
- the resin sealing of the embodiment is a so-called wafer level package, the semiconductor device 10A as a single unit is completed by dicing after the potting process.
- the semiconductor device 10 (10A) can be easily manufactured only by adding the groove forming step to the known manufacturing method.
- the formation of the concave groove 15 in the groove forming step can be performed together with the formation of the through hole 32, it can be easily formed by a known drilling machine or the like. Therefore, the semiconductor device 10 (10A) according to the embodiment having good detection sensitivity can be easily manufactured.
- the semiconductor device 10D has the same structure as that of the second embodiment in the structure of the package substrate 11, the light emitting element 12, the light receiving element 13, and the recessed groove 15, but in this case, the sealing resin 14 Is formed by molding (mold).
- the surface of the sealing resin 14 is formed in a concave lens shape. That is, the surface of the sealing resin 14 is formed like a concave lens in a region including the light emitting element 12 and the light receiving element 13.
- the emitted light of the light emitting element 12 is refracted in the direction away from the light receiving element 13 as a whole on the surface of the sealing resin 14. For this reason, light on the light receiving element 13 side in the refracted light is incident on the touch panel 2 at a deep angle, and reflection thereof is suppressed. Therefore, even with this configuration, light reaching the light receiving element 13 as noise light can be suppressed.
- the semiconductor device 10E is similar to the first embodiment in the structure of the package substrate 11, the light emitting element 12, the light receiving element 13, and the recessed groove 15, but in this case, the sealing resin 14 Is formed by molding (mold). And the surface of the sealing resin 14 is formed in the small uneven
- the semiconductor device of the present invention can be applied as an optical device to applications other than the proximity sensor of a smartphone (mobile terminal).
- it is useful as an optical device provided over a translucent panel.
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Abstract
Description
本発明は、発光素子と受光素子とを共通の基板部に実装して成る半導体デバイス、これを備えた近接センサーおよび半導体デバイスの製造方法に関するものである。 The present invention relates to a semiconductor device in which a light emitting element and a light receiving element are mounted on a common substrate, a proximity sensor provided with the semiconductor device, and a method for manufacturing the semiconductor device.
従来、この種の半導体デバイスとして、発光素子と受光素子との間に遮光部材を配置したオプトデバイスが知られている(特許文献1参照)。
このオプトデバイスは、基板と、基板上に搭載した発光素子および受光素子と、発光素子および受光素子を透光性樹脂で封止すると共に、発光素子に対峙する発信用レンズおよび受光素子に対峙する受信用レンズを含むモールド部と、モールド部における発信用レンズと受信用レンズとの間に形成された溝と、溝に設けられ、受光素子からの光を遮光する遮光部材と、を備えている。
発光素子から放射されてモールド部内を受光素子に向かって進む光は、溝に設けられた遮光部材により遮光される。これにより、新たにモールド金型等を必要とすることなく、モールド部内における発光素子から受光素子への光の回り込みを防止することができる。
Conventionally, an optical device in which a light shielding member is disposed between a light emitting element and a light receiving element is known as this type of semiconductor device (see Patent Document 1).
This opto-device seals a substrate, a light emitting element and a light receiving element mounted on the substrate, a light emitting element and a light receiving element with a translucent resin, and a light transmitting element and a light receiving element facing the light emitting element. A mold part including a receiving lens; a groove formed between the transmitting lens and the receiving lens in the mold part; and a light shielding member that is provided in the groove and shields light from the light receiving element. .
Light emitted from the light emitting element and traveling through the mold portion toward the light receiving element is blocked by a light blocking member provided in the groove. Accordingly, it is possible to prevent the light from flowing from the light emitting element to the light receiving element in the mold part without requiring a new mold or the like.
このような従来のオプトデバイス(半導体デバイス)では、モールド部に遮光部材を設けるようにしているため、モールド部に溝を形成する工程と、この溝に遮光部材を充填、或いは嵌合接着する工程と、が追加して必要となり、製造工程における工数が増加する問題があった。また、基板に実装される発光素子と受光素子との間に、遮光部材を設けるためのスペースを確保する必要があり、その分、デバイスが大型化する問題があった。 In such a conventional optical device (semiconductor device), since the light shielding member is provided in the mold portion, a step of forming a groove in the mold portion and a step of filling or fitting and fitting the light shielding member into the groove There is a problem that the number of steps in the manufacturing process increases. In addition, it is necessary to secure a space for providing a light shielding member between the light emitting element and the light receiving element mounted on the substrate, and there is a problem that the device is enlarged accordingly.
本発明は、小型化および製造の容易さを維持しつつ、発光素子から受光素子への光の回り込みを有効に防止することができる半導体デバイス、これを備えた近接センサーおよび半導体デバイスの製造方法を提供することを課題としている。 The present invention relates to a semiconductor device capable of effectively preventing light from sneaking from a light emitting element to a light receiving element while maintaining miniaturization and ease of manufacture, and a proximity sensor including the semiconductor device and a method of manufacturing the semiconductor device The issue is to provide.
本発明の半導体デバイスは、発光素子と受光素子とを共通のパッケージ基板に実装して成る半導体デバイスであって、発光素子および受光素子の少なくとも一方は、パッケージ基板に形成した凹溝に没するように実装されていることを特徴とする。 The semiconductor device of the present invention is a semiconductor device in which a light emitting element and a light receiving element are mounted on a common package substrate, and at least one of the light emitting element and the light receiving element is immersed in a concave groove formed in the package substrate. It is implemented in.
この構成によれば、例えば発光素子が凹溝に実装されている場合、その放射光は、凹溝内で適宜反射し凹溝の開口部側から放射される。このため、発光素子からの放射光は、指向性を持つことになり、ノイズ光として受光素子に達する光(の光量)を抑制することができる。また、例えば対象物に対し、パネル体越しに発光および受光が為される場合に、指向性を持つ発光素子の放射光は、深い角度でパネル体に入射する。このため、パネル体から反射するノイズ光も抑制することができる。しかも、凹溝により、発光素子からの放射光の取出し効率を向上させることができる。また、受光素子が凹溝に実装されている場合、受光素子に向かう発光素子からの放射光は、開口部上を通過するため、ノイズ光として受光素子に達する光の光量を抑制することができる。一方、パッケージ基板に形成される凹溝は、ドリルビット等で簡単に穿孔することができる。したがって、小型化および製造の容易さを維持しつつ、発光素子から受光素子への光(ノイズ光)の回り込みを有効に防止することができる。なお、「パッケージ基板」は、リードフレームを含む概念である。 According to this configuration, for example, when the light emitting element is mounted in the groove, the emitted light is appropriately reflected in the groove and emitted from the opening side of the groove. For this reason, the emitted light from the light emitting element has directivity, and the light (the amount of light) reaching the light receiving element as noise light can be suppressed. Further, for example, when light emission and light reception are performed on the object through the panel body, the emitted light of the light emitting element having directivity enters the panel body at a deep angle. For this reason, noise light reflected from the panel body can also be suppressed. In addition, the efficiency of extracting emitted light from the light emitting element can be improved by the concave groove. Further, when the light receiving element is mounted in the concave groove, the light emitted from the light emitting element toward the light receiving element passes through the opening, so that the amount of light reaching the light receiving element as noise light can be suppressed. . On the other hand, the groove formed in the package substrate can be easily drilled with a drill bit or the like. Therefore, it is possible to effectively prevent light (noise light) from wrapping around from the light emitting element to the light receiving element while maintaining the miniaturization and the ease of manufacture. The “package substrate” is a concept including a lead frame.
この場合、凹溝は、逆円錐台形状に形成され、発光素子および受光素子の少なくとも一方は、凹溝の溝底に実装されていることが好ましい。 In this case, the concave groove is preferably formed in an inverted truncated cone shape, and at least one of the light emitting element and the light receiving element is preferably mounted on the groove bottom of the concave groove.
この構成によれば、円錐台形状の市販のドリルビット等により、凹溝を簡単に形成することができる。また、発光素子および/または受光素子の実装を、既存の技術により容易に行うことができる。 According to this configuration, the groove can be easily formed by a commercially available drill bit having a truncated cone shape. In addition, the light emitting element and / or the light receiving element can be easily mounted by an existing technique.
また、発光素子および受光素子は、封止樹脂によるポッティングにより封止されていることが好ましい。 Further, the light emitting element and the light receiving element are preferably sealed by potting with a sealing resin.
封止樹脂は、硬化する際に収縮する。その際、厚みの大きい部分は大きく収縮し、小さい部分は小さく収縮する。
上記の構成によれば、封止樹脂の凹溝の部分は大きく収縮し、その他の部分は小さく収縮する。このため、封止樹脂の凹溝の部分は、他の部分に対し窪んだ表面形状となる。例えば発光素子が凹溝に実装されている場合、その放射光は、窪んだ封止樹脂の表面で拡散され、凹溝の無い場合と同様の広がりのある検出光として放射される。一方、受光素子が凹溝に実装されている場合、対象物からの反射光は、窪んだ封止樹脂の表面で集束され、受光素子の受光面に達し検出される。また、封止の機能が損なわれない限りおいて、封止樹脂(デバイス)の厚みを自在に調整することができ、カスタマイズ化を簡単に行うことができる。
The sealing resin shrinks when it is cured. At that time, the thick part contracts greatly, and the small part contracts small.
According to said structure, the recessed groove part of sealing resin shrink | contracts large, and another part shrinks small. For this reason, the concave groove portion of the sealing resin has a concave surface shape with respect to the other portions. For example, when the light emitting element is mounted in the concave groove, the emitted light is diffused on the surface of the recessed sealing resin, and is emitted as detection light having the same spread as when there is no concave groove. On the other hand, when the light receiving element is mounted in the concave groove, the reflected light from the object is focused on the surface of the recessed sealing resin, reaches the light receiving surface of the light receiving element, and is detected. Further, as long as the sealing function is not impaired, the thickness of the sealing resin (device) can be freely adjusted, and customization can be easily performed.
さらに、発光素子および受光素子は、封止樹脂によるモールディングにより封止され、封止樹脂の表面は、凹レンズ状に窪入形成されていることが好ましい。 Furthermore, it is preferable that the light emitting element and the light receiving element are sealed by molding with a sealing resin, and the surface of the sealing resin is formed in a concave lens shape.
この構成によれば、発光素子の放射光は、封止樹脂の表面において、全体として受光素子から離れる方向に屈折する。このため、例えば前面にパネル体が設けられている場合に、この屈折した光のうち受光素子側の光は、パネル体に深い角度で入射し、その反射が抑制される。したがって、ノイズ光として受光素子に達する光を抑制することができる。 According to this configuration, the emitted light of the light emitting element is refracted in the direction away from the light receiving element as a whole on the surface of the sealing resin. For this reason, for example, when a panel body is provided on the front surface, the light on the light receiving element side of the refracted light is incident on the panel body at a deep angle, and its reflection is suppressed. Therefore, light reaching the light receiving element as noise light can be suppressed.
一方、発光素子および受光素子は、封止樹脂によるモールディングにより封止され、封止樹脂の表面は、凹凸形状に形成されていることが好ましい。 On the other hand, the light emitting element and the light receiving element are preferably sealed by molding with a sealing resin, and the surface of the sealing resin is preferably formed in an uneven shape.
この構成によれば、発光素子から放射され、封止樹脂の表面(空気との界面)で反射して受光素子に向かう光のうち、特に凹部に反射する光は受光素子に向かうことがなく、その分、受光素子へのノイズ光を抑制することができる。 According to this configuration, the light emitted from the light emitting element, reflected by the surface of the sealing resin (interface with air) and directed to the light receiving element, in particular, the light reflected on the recess does not go to the light receiving element. Accordingly, noise light to the light receiving element can be suppressed.
本発明の近接センサーは、発光素子および受光素子のうち、少なくとも発光素子が、パッケージ基板に形成した凹溝に没するように実装されている、上記した半導体デバイスを備え、透光性のパネル体を介して、対象物の相対的な接近をセンシングすることを特徴とする。 A proximity sensor according to the present invention includes the above-described semiconductor device in which at least a light-emitting element of a light-emitting element and a light-receiving element is mounted so as to be immersed in a concave groove formed in a package substrate, and a translucent panel body It is characterized by sensing the relative approach of an object through
この構成によれば、発光素子からの指向性を持った放射光は、パネル体に対し深い入射角で入射する。このため、パネル体からの反射が抑制され、その分、この反射に基いて受光素子に入射するノイズ光を少なくすることができる。したがって、誤検出等を防止することができる。 According to this configuration, radiated light having directivity from the light emitting element is incident on the panel body at a deep incident angle. For this reason, reflection from the panel body is suppressed, and accordingly, noise light incident on the light receiving element based on this reflection can be reduced. Therefore, erroneous detection and the like can be prevented.
この場合、携帯端末に搭載され、パネル体が、携帯端末のタッチパネルであることが好ましい。 In this case, it is preferable that the panel body is mounted on the mobile terminal and the panel body is a touch panel of the mobile terminal.
この構成によれば、発光素子から受光素子への光(ノイズ光)の回り込みを防止できるため、人体を対象物とするセンシングを良好に行うことができる。 According to this configuration, since the light (noise light) from the light emitting element to the light receiving element can be prevented from being circulated, it is possible to satisfactorily perform sensing with the human body as an object.
本発明の半導体デバイスの製造方法は、上記した半導体デバイスの製造方法であって、配線パターンの形成に相前後してパッケージ基板に、発光素子および受光素子の少なくとも一方が実装される凹溝を形成する溝形成工程と、溝形成工程の後、パッケージ基板に発光素子および受光素子をチップ・マウントするマウント工程と、マウント工程の後、発光素子をワイヤーボンディングすると共に、受光素子をワイヤーボンディングするボンディング工程と、ボンディング工程の後、発光素子および受光素子を、封止樹脂によりポッティングするポッティング工程と、を備えたことを特徴とする。 The method for manufacturing a semiconductor device according to the present invention is the above-described method for manufacturing a semiconductor device, wherein a concave groove in which at least one of a light emitting element and a light receiving element is mounted is formed on a package substrate immediately before the formation of a wiring pattern. Groove forming step, mounting step for chip-mounting the light emitting element and the light receiving element on the package substrate after the groove forming step, and bonding step for wire bonding the light receiving element and wire bonding of the light receiving element after the mounting step And a potting step of potting the light emitting element and the light receiving element with a sealing resin after the bonding step.
この構成によれば、従前の製造工程に溝形成工程が追加された構成となる。溝形成工程においては、パッケージ基板に形成される凹溝が、ドリルビット等により簡単に形成することができる。したがって、小型化および製造の容易さを維持しつつ、発光素子から受光素子への光(ノイズ光)の回り込みを有効に防止することができる。 According to this configuration, a groove forming step is added to the previous manufacturing process. In the groove forming step, the concave groove formed in the package substrate can be easily formed with a drill bit or the like. Therefore, it is possible to effectively prevent light (noise light) from wrapping around from the light emitting element to the light receiving element while maintaining the miniaturization and the ease of manufacture.
以下、添付の図面を参照して、本発明の一実施形態に係る半導体デバイス、これを備えた近接センサーおよび半導体デバイスの製造方法について説明する。この半導体デバイスは、発光素子と受光素子とを備えており、近接センサーとして用いられる。例えば、この近接センサーは、携帯端末(スマートフォン)に搭載され、使用者が通話中であるか否かを検出する。このため、人体から反射した微弱な反射光を確実に受光すべく、発光素子から受光素子への光の回り込みを極力防止する構成になっている。 Hereinafter, a semiconductor device, a proximity sensor including the semiconductor device, and a method for manufacturing the semiconductor device according to an embodiment of the present invention will be described with reference to the accompanying drawings. This semiconductor device includes a light emitting element and a light receiving element, and is used as a proximity sensor. For example, this proximity sensor is mounted on a portable terminal (smart phone) and detects whether or not the user is talking. For this reason, in order to reliably receive the weak reflected light reflected from the human body, the light is prevented from wrapping around from the light emitting element to the light receiving element as much as possible.
図1は、実施形態に係る半導体デバイスを、近接センサーとしてスマートフォンに搭載した場合の断面図である。同図に示すように、スマートフォン1には、その前面全域にタッチパネル2が設けられており、タッチパネル2の内側には、回路基板3に実装するようにして、レシーバー4が配設されている。また、レシーバー4に隣接して、回路基板3に実装するようにして、近接センサー5が配設されている。
FIG. 1 is a cross-sectional view when the semiconductor device according to the embodiment is mounted on a smartphone as a proximity sensor. As shown in the figure, the smartphone 1 is provided with a
すなわち、実施形態の近接センサー5は、タッチパネル2と回路基板3との間隙に配設され、タッチパネル2を介して検出光となる赤外線(実施形態のものは、近赤外線)を放射する。スマートフォン1の使用者が、通話状態に移行すべく、耳Eをレシーバー4に近づけると、近接センサー5から放射された赤外線が、耳Eの部分等で反射しその一部が、近接センサー5に入射する。近接センサー5では、入射した光(赤外線)を光―電変換し増幅して、回路基板3の判定回路(図示省略)に出力する。判定回路では、受光量(電流値)が閾値と比較され、閾値を越えることで人体(耳E)を検出、すなわち通話状態を検出する。そして、通話状態を検出したら、タッチパネル2の操作を無効とするモード切替えを実施する。
That is, the
このように、実施形態の近接センサー5は、極めて近い対象物(耳E等)を検出するものであり、消費電力を抑えるべく発光量が抑えられ、且つ発光量に比して極めて少ない受光量を確実に検出する必要がある。そこで、近接センサー5を構成する本実施形態の半導体デバイス10では、S/N比を向上させるべく、ノイズ光を極力少なくなるようにしている。
As described above, the
図2は、第1実施形態に係る半導体デバイス10Aの断面図である。同図に示すように、この半導体デバイス10Aは、基板フレームやリードフレーム(実施形態のものは、基板フレーム)から成るパッケージ基板11と、パッケージ基板11に実装したチップ構成の発光素子12および受光素子13と、発光素子12および受光素子13を封止する透光性の封止樹脂14と、を備えている。また、受光素子13は、パッケージ基板11上に実装(マウント)される一方、発光素子12は、パッケージ基板11に形成した凹溝15に実装されている。
FIG. 2 is a cross-sectional view of the
パッケージ基板11(基板フレーム)は、ガラスエポキシや有機材料の基板で構成されており、表裏両面には、発光素子12がマウントされ且つ導通される発光側配線パターン21(電極等)、および受光素子13がマウントされ且つ導通される受光側配線パターン22(電極等)が、それぞれ形成されている。また、パッケージ基板11の発光素子12が実装される部位には、逆円錐台形状の凹溝15が形成されている。そして、発光素子12は、この凹溝15の溝底15aに設けたヒートシンクを兼ねる発光側配線パターン21(ダイパッド)にマウントされている。なお、凹溝15の内周面には、反射膜を形成しておくことが好ましい。
The package substrate 11 (substrate frame) is made of a glass epoxy or organic material substrate, and on both the front and back surfaces, a light emitting side wiring pattern 21 (electrodes and the like) on which the
発光素子12は、両小口端の発光面から赤外線(近赤外線)を放射する発光ダイオードのチップで構成されている。そして、発光素子12の電極パッド12aと、発光側配線パターン21のランド21aとは、ボンディングワイヤー24(金線、銅線、アルミニウム線等)で接続されている。そして、発光素子12は、パッケージ基板11に形成した凹溝15内に完全に没するように配設されている。なお、発光素子12は、上面を発光面とするものであってもよい。
The
図2に示すように、パッケージ基板11の凹溝15内に実装された発光素子12では、その両小口端から赤外線が、凹溝12内面に反射してその開口部分から放射される。このため、検出光となる赤外線は、その放射角度が絞り込まれ(集束)指向性をもって放射されることになる。これにより、封止樹脂14の上面(空気との界面)や、タッチパネル2の下面(空気との界面)における、赤外線の反射が抑制される。すなわち、受光素子13へのノイズ光が抑制される。
As shown in FIG. 2, in the
受光素子13は、上面を受光面としてパッケージ基板11にマウントされたフォトダイオードのチップで構成されている。そして、受光素子13の電極パッド13aと、受光側配線パターン22のランド22aとは、ボンディングワイヤー26(金線、銅線、アルミニウム線等)で接続されている。なお、フォトダイオードに代えて、フォトトランジスタを用いてもよい。
The
封止樹脂14は、赤外線に対し透明なエポキシ系樹脂やシリコン系樹脂等で構成されており、発光素子12、受光素子13および各ボンディングワイヤー24,26を覆っている(封止)。この場合、封止樹脂14は、モールド成形により形成してもよいが、実施形態のものは、ポッティングにより形成されている(詳細は、後述する)。すなわち、封止樹脂14は、発光素子12や受光素子13を覆うように流し込んだ液体の封止樹脂14を、熱硬化させて形成されている。
The sealing
この場合、封止樹脂14は、熱硬化により収縮する性質を有しており、厚みのある封止樹脂14の凹溝15の部分は大きく収縮し、厚みのないその他の部分は小さく収縮する(図2参照)。このため、封止樹脂14の凹溝15の部分は、他の部分に対し窪んだ表面形状、すなわち凹レンズ様の表面形状となる。このため、凹溝15により絞られた発光素子12の放射光は、窪んだ封止樹脂14の表面で拡散され、凹溝15の無い場合と同様の広がりのある検出光として放射される。
In this case, the sealing
また、この半導体デバイス10Aでは、上記のタッチパネル2と回路基板3との間隙幅が異なるスマートフォン1に対応できるように、ポッティングにより、封止樹脂14の厚み(樹脂量)を調整可能としている。具体的には、封止の機能が損なわれない限りおいて、タッチパネル2との間の間隙を極力小さくするように、封止樹脂14(デバイス)の厚みを調整するようにしている。
Further, in this
このように構成した、第1実施形態の半導体デバイス10Aでは、発光素子12の放射光は、凹溝15内で適宜反射し凹溝15の開口部側から放射される。このため、発光素子12からの放射光は、絞られるようにして放射され、封止樹脂14内においてノイズ光として受光素子13に達する光の光量を抑制することができる。また、絞られた放射光は、タッチパネル2に対し反射し難く、この点でも、ノイズ光として受光素子13に達する光の光量を抑制することができる。したがって、発光素子12から受光素子13への光(ノイズ光)の回り込みを有効に防止することができる。しかも、凹溝15により、発光素子12からの放射光の取出し効率を向上させることができる。一方、パッケージ基板11に形成される凹溝15は、ドリルビット等で簡単に穿孔することができる。したがって、小型化および製造の容易さを維持しつつ、発光素子12から受光素子13への光(ノイズ光)の回り込みを有効に防止することができる。
In the
次に、図3を参照して、第2実施形態に係る半導体デバイス10Bにつき、主に第1実施形態と異なる部分について説明する。同図に示すように、この半導体デバイス10Bでは、第1実施形態と異なり、発光素子12がパッケージ基板11上に実装(マウント)される一方、受光素子13がパッケージ基板11の凹溝15に実装されている。すなわち、発光素子12は、パッケージ基板11上に形成された発光側配線パターン21にマウントされ、また受光素子13は、凹溝15に没するように、凹溝15の溝底15aに設けた受光側配線パターン22にマウントされている。
Next, with reference to FIG. 3, the
このように構成した、第2実施形態の半導体デバイス10Bでは、発光素子12の放射光のうちの受光素子13に向かう放射光は、凹溝15の開口部上を通過するため、封止樹脂14内においてノイズ光として受光素子13に達する光の光量を抑制することができる。また、対象物(耳E)からの反射光は、凹溝15内で適宜反射し集束して受光素子13の受光面に達し、光効率良く受光される。したがって、この場合も、小型化および製造の容易さを維持しつつ、発光素子12から受光素子13への光(ノイズ光)の回り込みを有効に防止することができる。
In the
次に、図4を参照して、第3実施形態に係る半導体デバイス10Cにつき、主に第1実施形態と異なる部分について説明する。同図に示すように、この半導体デバイス10Cでは、発光素子12および受光素子13のいずれもが、パッケージ基板11の凹溝15に実装されている。すなわち、発光素子12は、凹溝15に没するように、凹溝15の溝底15aに設けた発光側配線パターン21にマウントされ、また受光素子13は、凹溝15に没するように、凹溝15の溝底15aに設けた受光側配線パターン22にマウントされている。
Next, with respect to the
このように構成した、第3実施形態の半導体デバイス10Cでは、それぞれの凹溝15により、封止樹脂14内において発光素子12の放射光がノイズ光として受光素子13に達する光の光量を抑制することができる。したがって、この場合も、小型化および製造の容易さを維持しつつ、発光素子12から受光素子13への光(ノイズ光)の回り込みを有効に防止することができる。
In the
次に、図2、図5および図6を参照して、実施形態の半導体デバイス10(10A)の製造方法について、第1実施形態ものを例に説明する。
この製造方法は、両配線パターン21,22の形成に相前後してパッケージ基板11に、発光素子12が実装される凹溝15を形成する溝形成工程と、溝形成工程の後、パッケージ基板11に発光素子12および受光素子13をチップ・マウントするマウント工程と、マウント工程の後、発光素子12をワイヤーボンディングすると共に、受光素子13をワイヤーボンディングするボンディング工程と、ボンディング工程の後、発光素子12および受光素子13を、封止樹脂14によりポッティングするポッティング工程と、を備えている。
Next, a method for manufacturing the semiconductor device 10 (10A) according to the embodiment will be described by taking the first embodiment as an example with reference to FIGS.
In this manufacturing method, a groove forming step for forming a
溝形成工程では、パッケージ基板11が基板フレームである場合には、表裏めっき処理された状態の基板フレームに、凹溝15を形成してもよいし、表裏めっき処理された状態の基板フレームに、配線パターンのパターン形成を行った後、凹溝15を形成してもよい。また、図5に示すように、凹溝15の形成は、専用のドリルビット31を用い、スルーホール32の形成と併せて行うことが好ましい。一方、図6に示すように、パッケージ基板11がリードフレーム(原材)である場合には、エッチング等により、凹溝15と両配線パターン21,22とを同時に形成することが好ましい。
In the groove forming step, when the
マウント工程では、既知のダイボンディング装置を用い、発光素子12および受光素子13を銀ペースト等の接着剤を介してチップ・マウントする。
ボンディング工程では、既知のボンディング装置を用い、例えばボールボンディング方式で、発光素子12および受光素子13をワイヤーボンディングする。
ポッティング工程では、ディスペンサを用い、パッケージ基板11の上面全域に封止樹脂14のポッティングを行い、その後、ポッティングした封止樹脂14を、オーブン加熱等により硬化させる。
なお、実施形態の樹脂封止は、いわゆるウェーハレベルパッケージとなるため、ポッティング工程の後のダイシングにより、単体としての半導体デバイス10Aが完成する。
In the mounting process, the
In the bonding process, the
In the potting process, the sealing
In addition, since the resin sealing of the embodiment is a so-called wafer level package, the
このように、実施形態の半導体デバイス10(10A)の製造方法では、既知の製造方法に溝形成工程を付加しただけで、半導体デバイス10(10A)を簡単に製造することができる。しかも、溝形成工程における凹溝15の形成は、スルーホール32の形成と併せて実施することができるため、既知のドリリングマシン等で、簡単に形成することができる。したがって、検出感度の良好な実施形態の半導体デバイス10(10A)を、簡単に製造することができる。
Thus, in the manufacturing method of the semiconductor device 10 (10A) according to the embodiment, the semiconductor device 10 (10A) can be easily manufactured only by adding the groove forming step to the known manufacturing method. In addition, since the formation of the
次に、図7を参照して、第4実施形態に係る半導体デバイス10Dにつき、主に第2実施形態と異なる部分について説明する。同図に示すように、この半導体デバイス10Dでは、パッケージ基板11、発光素子12、受光素子13および凹溝15の構造において第2実施形態と同様であるが、この場合には、封止樹脂14がモールディング(金型)により形成されている。そして、封止樹脂14の表面が、凹レンズ状に窪入形成されている。すなわち、封止樹脂14の表面は、発光素子12および受光素子13を含む領域において、凹レンズ様に形成されている。
Next, with respect to the
このような構成では、発光素子12の放射光は、封止樹脂14の表面において、全体として受光素子13から離れる方向に屈折する。このため、屈折した光のうち受光素子13側の光は、タッチパネル2に対し深い角度で入射し、その反射が抑制される。したがって、この構成でも、ノイズ光として受光素子13に達する光を抑制することができる。
In such a configuration, the emitted light of the
次に、図8を参照して、第5実施形態に係る半導体デバイス10Eにつき、主に第1実施形態と異なる部分について説明する。同図に示すように、この半導体デバイス10Eでは、パッケージ基板11、発光素子12、受光素子13および凹溝15の構造において第1実施形態と同様であるが、この場合には、封止樹脂14がモールディング(金型)により形成されている。そして、封止樹脂14の表面が、矩形断面の小さな凹凸形状に形成されている。
Next, with respect to the
このような構成では、発光素子12から放射され、封止樹脂14の表面(空気との界面)で反射して受光素子13に向かう光のうち、特に凹凸の凹部に反射する光は受光素子13に向かうことがなく、その分、受光素子13へのノイズ光を抑制することができる。したがって、この構成でも、受光素子13への光の回り込みを防止することができる。
In such a configuration, light that is radiated from the
なお、本発明の半導体デバイスは、光デバイスとして、スマートフォン(携帯端末)の近接センサー以外の用途にも適用可能である。特に、透光性のパネル越しに設ける光デバイスとして有用である。 Note that the semiconductor device of the present invention can be applied as an optical device to applications other than the proximity sensor of a smartphone (mobile terminal). In particular, it is useful as an optical device provided over a translucent panel.
1 スマートフォン、2 タッチパネル、5 近接センサー、10,10A,10B,10C、10D,10E 半導体デバイス、11 パッケージ基板、12 発光素子、13 受光素子、14 封止樹脂、15 凹溝、15a 溝底、21 発光側配線パターン、22 受光側配線パターン、24 ボンディングワイヤー、26 ボンディングワイヤー 1 smart phone, 2 touch panel, 5 proximity sensor, 10, 10A, 10B, 10C, 10D, 10E semiconductor device, 11 package substrate, 12 light emitting element, 13 light receiving element, 14 sealing resin, 15 concave groove, 15a groove bottom, 21 Light emitting side wiring pattern, 22 Light receiving side wiring pattern, 24 bonding wire, 26 bonding wire
Claims (8)
前記発光素子および前記受光素子の少なくとも一方は、前記パッケージ基板に形成した凹溝に没するように実装されていることを特徴とする半導体デバイス。 A semiconductor device in which a light emitting element and a light receiving element are mounted on a common package substrate,
At least one of the light emitting element and the light receiving element is mounted so as to be immersed in a concave groove formed in the package substrate.
前記発光素子および前記受光素子の少なくとも一方は、前記凹溝の溝底に実装されていることを特徴とする請求項1に記載の半導体デバイス。 The concave groove is formed in an inverted truncated cone shape,
The semiconductor device according to claim 1, wherein at least one of the light emitting element and the light receiving element is mounted on a groove bottom of the concave groove.
前記封止樹脂の表面は、凹レンズ状に窪入形成されていることを特徴とする請求項1に記載の半導体デバイス。 The light emitting element and the light receiving element are sealed by molding with a sealing resin,
The semiconductor device according to claim 1, wherein the surface of the sealing resin is formed in a concave lens shape.
前記封止樹脂の表面は、凹凸形状に形成されていることを特徴とする請求項1に記載の半導体デバイス。 The light emitting element and the light receiving element are sealed by molding with a sealing resin,
The semiconductor device according to claim 1, wherein a surface of the sealing resin is formed in an uneven shape.
透光性のパネル体を介して、対象物の相対的な接近をセンシングすることを特徴とする近接センサー。 2. The semiconductor device according to claim 1, wherein at least the light emitting element of the light emitting element and the light receiving element is mounted so as to be immersed in a concave groove formed in the package substrate.
A proximity sensor that senses the relative approach of an object through a translucent panel.
前記パネル体が、前記携帯端末のタッチパネルであることを特徴とする請求項5に記載の近接センサー。 On mobile devices,
The proximity sensor according to claim 5, wherein the panel body is a touch panel of the mobile terminal.
配線パターンの形成に相前後して前記パッケージ基板に、前記発光素子および前記受光素子の少なくとも一方が実装される凹溝を形成する溝形成工程と、
前記溝形成工程の後、前記パッケージ基板に前記発光素子および前記受光素子をチップ・マウントするマウント工程と、
前記マウント工程の後、前記発光素子をワイヤーボンディングすると共に、前記受光素子をワイヤーボンディングするボンディング工程と、
前記ボンディング工程の後、前記発光素子および前記受光素子を、封止樹脂によりポッティングするポッティング工程と、を備えたことを特徴とする半導体デバイスの製造方法。 A method of manufacturing a semiconductor device according to claim 3,
A groove forming step for forming a concave groove in which at least one of the light emitting element and the light receiving element is mounted on the package substrate before and after the formation of the wiring pattern;
After the groove forming step, a mounting step of chip-mounting the light emitting element and the light receiving element on the package substrate;
After the mounting step, wire bonding the light emitting element, and a bonding step of wire bonding the light receiving element,
After the said bonding process, the potting process of potting the said light emitting element and the said light receiving element with sealing resin is provided, The manufacturing method of the semiconductor device characterized by the above-mentioned.
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| PCT/JP2012/006436 WO2014054082A1 (en) | 2012-10-05 | 2012-10-05 | Semiconductor device, proximity sensor equipped with same, and semiconductor device manufacturing method |
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| PCT/JP2012/006436 WO2014054082A1 (en) | 2012-10-05 | 2012-10-05 | Semiconductor device, proximity sensor equipped with same, and semiconductor device manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017092352A (en) * | 2015-11-13 | 2017-05-25 | ローム株式会社 | Light emitting / receiving device and method for manufacturing light emitting / receiving device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56110273A (en) * | 1980-02-05 | 1981-09-01 | Nec Corp | Photo semiconductor device |
| JP2010032254A (en) * | 2008-07-25 | 2010-02-12 | Sharp Corp | Optical semiconductor device and mobile equipment |
| JP2010114114A (en) * | 2008-11-04 | 2010-05-20 | Rohm Co Ltd | Reflection-type photointerrupter |
-
2012
- 2012-10-05 WO PCT/JP2012/006436 patent/WO2014054082A1/en not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56110273A (en) * | 1980-02-05 | 1981-09-01 | Nec Corp | Photo semiconductor device |
| JP2010032254A (en) * | 2008-07-25 | 2010-02-12 | Sharp Corp | Optical semiconductor device and mobile equipment |
| JP2010114114A (en) * | 2008-11-04 | 2010-05-20 | Rohm Co Ltd | Reflection-type photointerrupter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017092352A (en) * | 2015-11-13 | 2017-05-25 | ローム株式会社 | Light emitting / receiving device and method for manufacturing light emitting / receiving device |
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