WO2013035620A1 - 接合方法及び接合システム - Google Patents
接合方法及び接合システム Download PDFInfo
- Publication number
- WO2013035620A1 WO2013035620A1 PCT/JP2012/071989 JP2012071989W WO2013035620A1 WO 2013035620 A1 WO2013035620 A1 WO 2013035620A1 JP 2012071989 W JP2012071989 W JP 2012071989W WO 2013035620 A1 WO2013035620 A1 WO 2013035620A1
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- Prior art keywords
- adhesive
- wafer
- substrate
- processed
- solvent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/0012—Mechanical treatment, e.g. roughening, deforming, stretching
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/14—Surface bonding means and/or assembly means with shaping, scarifying, or cleaning joining surface only
Definitions
- the present invention relates to a bonding method for bonding a substrate to be processed and a support substrate, and a bonding system for performing the bonding method.
- the diameter of a semiconductor wafer (hereinafter referred to as “wafer”) has been increased. Further, in a specific process such as mounting, it is required to make the wafer thinner. For example, if a thin wafer with a large diameter is transported or polished as it is, the wafer may be warped or cracked. For this reason, for example, in order to reinforce the wafer, the wafer is attached to, for example, a wafer that is a support substrate or a glass substrate.
- the bonding of the wafer and the support substrate is performed by interposing an adhesive between the wafer and the support substrate using, for example, a bonding apparatus.
- the bonding apparatus includes, for example, a first holding member that holds a wafer, a second holding member that holds a support substrate, a heating mechanism that heats an adhesive disposed between the wafer and the support substrate, and at least a first And a moving mechanism for moving the holding member or the second holding member in the vertical direction. And in this bonding apparatus, after supplying an adhesive agent between a wafer and a support substrate and heating the said adhesive agent, the wafer and a support substrate are pressed and bonded together (patent document 1).
- the adhesive protrudes between the wafer and the support substrate.
- the adhesive that protrudes in this way may adversely affect the transfer process and processing process of the wafer and the support substrate.
- an adhesive adheres to a transport device that transports a wafer and a support substrate in the transport process, the adhesive adheres to another wafer or support substrate.
- an adhesive may adhere to a processing apparatus that performs a predetermined processing on the wafer and the support substrate. In such a case, the wafer and the support substrate cannot be bonded appropriately.
- the present invention has been made in view of such a point, and an object thereof is to suppress an adhesive protruding from between a substrate to be processed and a support substrate and to appropriately bond the substrate to be processed and the support substrate.
- the present invention is a bonding method for bonding a substrate to be processed and a support substrate, and a bonding step of pressing and bonding the substrate to be processed and the support substrate via an adhesive; Thereafter, the adhesive between the substrate to be processed and the support substrate in the bonding step is a solvent for the adhesive with respect to the outer adhesive that protrudes from the outer surface of the polymerization substrate formed by bonding the substrate to be processed and the support substrate. And an adhesive removing step for removing the surface of the outer adhesive so that the outer adhesive is formed in a predetermined size, Have
- the surface of the outer adhesive protruding from the outer surface of the polymerization substrate is removed in the adhesive removing step, and the outer adhesive is made a predetermined size. Can be formed. If it does so, an outer side adhesive agent does not adhere to the conveying apparatus which conveys a to-be-processed substrate, a support substrate, and a superposition
- the present invention according to another aspect is a bonding system for bonding a substrate to be processed and a support substrate, A bonding apparatus that presses and bonds the substrate to be processed and the support substrate through an adhesive; A solvent supply unit that supplies the solvent of the adhesive to the outer adhesive that protrudes from the outer surface of the polymerized substrate in which the adhesive between the target substrate and the support substrate is bonded to the target substrate and the support substrate. And an adhesive removing device that removes the surface of the outer adhesive so that the outer adhesive is formed in a predetermined size by the solvent of the adhesive supplied from the solvent supply unit.
- the adhesive protruding from between the substrate to be processed and the support substrate can be suppressed, and the substrate to be processed and the support substrate can be appropriately bonded.
- FIG. 1 is a plan view showing the outline of the configuration of the joining system 1 according to the present embodiment.
- FIG. 2 is a side view illustrating the outline of the internal configuration of the joining system 1.
- a processing target wafer W as a processing target substrate and a supporting wafer S as a supporting substrate are bonded via an adhesive G.
- a surface bonded to the support wafer S via the adhesive G is referred to as a “bonding surface W J ” as a surface, and a surface opposite to the bonding surface W J is defined as a “back surface”. It is referred to as “non-bonding surface W N ”.
- a surface bonded to the processing target wafer W via the adhesive G is referred to as a “bonding surface S J ” as a surface, and a surface opposite to the bonding surface S J is defined as a “back surface”. It is referred to as “non-joint surface S N ”.
- the to-be-processed wafer W and the support wafer S are joined, and the superposition
- wafer W is a wafer as a product, for example, joint surface W J A plurality of electronic circuit is formed on the non-bonding surface W N is polished.
- the support wafer S is a wafer having the same diameter as that of the wafer W to be processed and supporting the wafer W to be processed.
- the case where a wafer is used as the support substrate will be described, but another substrate such as a glass substrate may be used.
- the bonding system 1 includes cassettes C W , C S , and C T that can accommodate, for example, a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T, respectively.
- the loading / unloading station 2 for loading / unloading and the processing station 3 including various processing apparatuses for performing predetermined processing on the processing target wafer W, the supporting wafer S, and the overlapped wafer T are integrally connected. .
- the loading / unloading station 2 is provided with a cassette mounting table 10.
- the cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11.
- the cassette mounting plates 11 are arranged in a line in the X direction (vertical direction in FIG. 1). These cassette mounting plates 11, cassettes C W to the outside of the interface system 1, C S, when loading and unloading the C T, a cassette C W, C S, can be placed on C T .
- the carry-in / out station 2 is configured to be capable of holding a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T.
- the number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined.
- One of the cassettes may be used for collecting defective wafers. That is, this is a cassette that can separate from a normal superposed wafer T a wafer in which a defect occurs in the joining of the processing target wafer W and the supporting wafer S due to various factors.
- this is a cassette that can separate from a normal superposed wafer T a wafer in which a defect occurs in the joining of the processing target wafer W and the supporting wafer S due to various factors.
- using a one cassette C T for the recovery of the fault wafer, and using the other cassette C T for the accommodation of a normal bonded wafer T among the plurality of cassettes C T, using a one cassette C T for the recovery of the fault wafer, and using the other cassette C T for the accommodation of a normal bonded wafer T.
- a wafer transfer unit 20 is provided adjacent to the cassette mounting table 10.
- the wafer transfer unit 20 is provided with a wafer transfer device 22 that is movable on a transfer path 21 extending in the X direction.
- the wafer transfer device 22 is also movable in the vertical direction and around the vertical axis ( ⁇ direction), and includes cassettes C W , C S , and C T on each cassette mounting plate 11 and a third of the processing station 3 to be described later.
- the to-be-processed wafer W, the support wafer S, and the superposed wafer T can be transferred to and from the transition devices 50 and 51 of the processing block G3.
- the processing station 3 is provided with a plurality of, for example, three processing blocks G1, G2, G3 provided with various processing devices.
- a first processing block G1 is provided on the front side of the processing station 3 (X direction negative direction side in FIG. 1), and on the back side of the processing station 3 (X direction positive direction side in FIG. 1).
- a second processing block G2 is provided.
- a third processing block G3 is provided on the processing station 3 on the side of the loading / unloading station 2 (the Y direction negative direction side in FIG. 1).
- bonding devices 30 to 33 for pressing and bonding the processing target wafer W and the supporting wafer S via the adhesive G are provided in this order from the loading / unloading station 2 side in the Y direction. They are arranged side by side.
- the second processing block G2 is bonded to a coating apparatus 40 for applying the adhesive G to the wafer W to be processed as shown in FIG. 2 and an outer adhesive protruding from the outer surface of the superposed wafer T as will be described later.
- An adhesive removing device 41 that supplies the solvent of the agent G and removes the surface of the outer adhesive so as to form the outer adhesive in a predetermined size is stacked in two steps in the vertical direction in this order from the bottom. ing.
- the heat treatment apparatuses 42 to 44 for heating the above to a predetermined temperature and similar heat treatment apparatuses 45 to 47 are arranged in this order in the direction toward the loading / unloading station 2 side.
- the heat treatment apparatuses 42 to 44 and the heat treatment apparatuses 45 to 47 are stacked in three stages in the vertical direction in this order from the bottom.
- the number of the heat treatment apparatuses 42 to 47 and the arrangement in the vertical direction and the horizontal direction can be arbitrarily set.
- transition devices 50 and 51 for the processing target wafer W, the supporting wafer S, and the overlapped wafer T are stacked in two steps in the vertical direction in this order from the bottom.
- a wafer transfer region 60 is formed in a region surrounded by the first processing block G1 to the third processing block G3.
- a wafer transfer device 61 is disposed in the wafer transfer region 60. Note that the pressure in the wafer transfer region 60 is equal to or higher than atmospheric pressure, and the wafer to be processed W, the support wafer S, and the superposed wafer T are transferred in a so-called atmospheric system in the wafer transfer region 60.
- the wafer transfer device 61 has, for example, a transfer arm that can move around the vertical direction, horizontal direction (Y direction, X direction), and vertical axis.
- the wafer transfer device 61 moves within the wafer transfer region 60, and moves to a predetermined device in the surrounding first processing block G1, second processing block G2, and third processing block G3. S and superposed wafer T can be conveyed.
- the bonding apparatus 30 includes a processing container 100 that can seal the inside.
- a loading / unloading port 101 for the wafer W to be processed, the support wafer S, and the overlapped wafer T is formed on the side surface of the processing container 100 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port. Yes.
- the inside of the processing container 100 is partitioned by the inner wall 102 into a preprocessing region D1 and a joining region D2.
- the loading / unloading port 101 described above is formed on the side surface of the processing container 100 in the preprocessing region D1.
- a carry-in / out port 103 for the wafer W to be processed, the support wafer S, and the overlapped wafer T is also formed on the inner wall 102.
- a delivery unit 110 for delivering the wafer W to be processed, the support wafer S, and the overlapped wafer T to and from the outside of the bonding apparatus 30 is provided.
- the delivery unit 110 is disposed adjacent to the loading / unloading port 101. Further, as will be described later, the delivery unit 110 is arranged in a plurality of, for example, two stages in the vertical direction, and can deliver any two of the processing target wafer W, the supporting wafer S, and the overlapped wafer T at the same time.
- the processing target wafer W or the support wafer S before bonding may be delivered by one delivery unit 110, and the superposed wafer T after joining may be delivered by another delivery unit 110.
- the wafer W to be processed before bonding may be delivered by one delivery unit 110 and the support wafer S before joining may be delivered by another delivery unit 110.
- a reversing unit 111 for reversing the front and back surfaces of the support wafer S is provided on the Y direction negative direction side of the pretreatment region D1, that is, on the loading / unloading port 103 side, vertically above the delivery unit 110. Note that the reversing unit 111 can adjust the horizontal direction of the support wafer S as described later, and can also adjust the horizontal direction of the wafer W to be processed.
- a transfer unit 112 that transfers the wafer W, the support wafer S, and the overlapped wafer T to the delivery unit 110, the reversing unit 111, and the bonding unit 113 described later is provided. ing.
- the transport unit 112 is attached to the loading / unloading port 103.
- a bonding portion 113 that presses and bonds the processing target wafer W and the support wafer S via the adhesive G is provided.
- the delivery unit 110 includes a delivery arm 120 and wafer support pins 121.
- the delivery arm 120 can deliver the wafer W to be processed, the support wafer S, and the overlapped wafer T to the outside of the bonding apparatus 30, that is, between the wafer transfer device 61 and the wafer support pins 121.
- the wafer support pins 121 are provided in a plurality of, for example, three locations, and can support the processing target wafer W, the supporting wafer S, and the overlapped wafer T.
- the delivery arm 120 includes an arm unit 130 that holds the processing target wafer W, the support wafer S, and the overlapped wafer T, and an arm driving unit 131 that includes, for example, a motor.
- the arm part 130 has a substantially disk shape.
- the arm drive unit 131 can move the arm unit 130 in the X direction (vertical direction in FIG. 5).
- the arm drive part 131 is attached to the rail 132 extended
- the delivery arm 120 can move in the horizontal direction (X direction and Y direction), and the wafer W to be processed, the support wafer S, and the overlap between the wafer transfer device 61 and the wafer support pins 121.
- the wafer T can be delivered smoothly.
- a plurality of, for example, four wafer support pins 140 for supporting the processing target wafer W, the supporting wafer S, and the overlapped wafer T are provided on the arm unit 130.
- a guide 141 for positioning the processing target wafer W, the supporting wafer S, and the overlapped wafer T supported by the wafer supporting pins 140 is provided on the arm unit 130.
- a plurality of guides 141 are provided, for example, at four locations so as to guide the side surfaces of the processing target wafer W, the supporting wafer S, and the overlapped wafer T.
- notches 142 are formed at, for example, four locations on the outer periphery of the arm portion 130.
- the notch 142 causes the transfer arm of the wafer transfer device 61 to interfere with the arm unit 130 when the wafer W to be processed, the support wafer S, and the overlapped wafer T are transferred from the transfer arm of the wafer transfer device 61 to the transfer arm 120. Can be prevented.
- the arm part 130 is formed with two slits 143 along the X direction.
- the slit 143 is formed from the end surface of the arm portion 130 on the wafer support pin 121 side to the vicinity of the center portion of the arm portion 130.
- the slit 143 can prevent the arm unit 130 from interfering with the wafer support pins 121.
- the reversing unit 111 has a holding arm 150 that holds the support wafer S and the wafer W to be processed, as shown in FIGS.
- the holding arm 150 extends in the horizontal direction (X direction in FIGS. 8 and 9).
- the holding arm 150 is provided with, for example, four holding members 151 for holding the support wafer S and the wafer W to be processed.
- the holding member 151 is configured to be movable in the horizontal direction with respect to the holding arm 150.
- a notch 152 for holding the outer periphery of the support wafer S and the wafer W to be processed is formed. These holding members 151 can sandwich and hold the support wafer S and the wafer W to be processed.
- the holding arm 150 is supported by a first drive unit 153 provided with, for example, a motor as shown in FIGS.
- the holding arm 150 is rotatable about the horizontal axis and can move in the horizontal direction (X direction in FIGS. 8 and 9 and Y direction in FIGS. 8 and 10).
- the first drive unit 153 may rotate the holding arm 150 about the vertical axis to move the holding arm 150 in the horizontal direction.
- a second drive unit 154 including a motor or the like is provided below the first drive unit 153.
- the first driving unit 153 can move in the vertical direction along the support pillar 155 extending in the vertical direction.
- the support wafer S and the wafer W to be processed held by the holding member 151 by the first drive unit 153 and the second drive unit 154 can rotate around the horizontal axis and move in the vertical and horizontal directions. it can.
- the position adjusting mechanism 160 that adjusts the horizontal direction of the support wafer S and the wafer W to be processed held by the holding member 151 is supported by the support column 155 via the support plate 161.
- the position adjustment mechanism 160 is provided adjacent to the holding arm 150.
- the position adjustment mechanism 160 includes a base 162 and a detection unit 163 that detects the positions of the notch portions of the support wafer S and the wafer W to be processed.
- the position adjusting mechanism 160 detects the positions of the notch portions of the support wafer S and the wafer W to be processed by the detection unit 163 while moving the support wafer S and the wafer W to be processed held in the holding member 151 in the horizontal direction.
- the horizontal orientation of the support wafer S and the wafer W to be processed is adjusted by adjusting the position of the notch portion.
- the delivery unit 110 configured as described above is arranged in two stages in the vertical direction, and the reversing unit 111 is arranged vertically above these delivery units 110. That is, the delivery arm 120 of the delivery unit 110 moves in the horizontal direction below the holding arm 150 and the position adjustment mechanism 160 of the reversing unit 111. Further, the wafer support pins 121 of the delivery unit 110 are disposed below the holding arm 150 of the reversing unit 111.
- the transport unit 112 has a plurality of, for example, two transport arms 170 and 171.
- the first transfer arm 170 and the second transfer arm 171 are arranged in two stages in this order from the bottom in the vertical direction.
- the first transfer arm 170 and the second transfer arm 171 have different shapes as will be described later.
- an arm driving unit 172 provided with a motor or the like is provided at the base ends of the transfer arms 170 and 171.
- Each arm 170, 171 can be independently moved in the horizontal direction by the arm driving unit 172.
- the transfer arms 170 and 171 and the arm driving unit 172 are supported by the base 173.
- the transport unit 112 is provided at the loading / unloading port 103 formed on the inner wall 102 of the processing container 100 as shown in FIGS. 4 and 14.
- the transport unit 112 can be moved in the vertical direction along the loading / unloading port 103 by, for example, a driving unit (not shown) provided with a motor or the like.
- the first transfer arm 170 holds and transfers the back surface of the processing target wafer W, the supporting wafer S, and the overlapped wafer T (non-bonding surfaces W N and S N in the processing target wafer W and the supporting wafer S). As shown in FIG. 15, the first transfer arm 170 has an arm portion 180 whose tip is branched into two tip portions 180 a and 180 a, and a support that is formed integrally with the arm portion 180 and supports the arm portion 180. Part 181.
- a plurality of O-rings 182 are provided on the arm unit 180, for example, at four locations.
- the O-ring 182 comes into contact with the back surface of the wafer to be processed W, the support wafer S, and the overlapped wafer T, and the frictional force between the O-ring 182 and the back surface of the wafer to be processed W, the support wafer S, and the overlap wafer T is
- the O-ring 182 holds the back surface of the processing target wafer W, the supporting wafer S, and the overlapped wafer T.
- the first transfer arm 170 can horizontally hold the processing target wafer W, the supporting wafer S, and the superposed wafer T on the O-ring 182.
- guide members 183 and 184 provided on the outside of the processing target wafer W, the support wafer S, and the superposed wafer T held by the O-ring 182 are provided.
- the first guide member 183 is provided at the distal end of the distal end portion 180 a of the arm portion 180.
- the second guide member 184 is formed in an arc shape along the outer periphery of the processing target wafer W, the supporting wafer S, and the overlapped wafer T, and is provided on the supporting portion 181 side. These guide members 183 and 184 can prevent the wafer W to be processed, the support wafer S, and the overlapped wafer T from jumping out of the first transfer arm 170 or sliding down.
- the to-be-processed wafer W, the support wafer S, and the overlapped wafer T are held at appropriate positions on the O-ring 182, the to-be-processed wafer W, the support wafer S, and the overlapped wafer T are in contact with the guide members 183 and 184. do not do.
- Second transfer arm 171 carries for example the surface of the support wafer S, that is, holding the outer periphery of the joint surface S J. That is, the second transfer arm 171 holds and conveys the outer periphery of the joint surface S J of the support wafer S to the front and back surfaces by the reversing unit 111 has been reversed. As shown in FIG. 17, the second transfer arm 171 has an arm portion 190 whose front end branches into two front end portions 190 a and 190 a, and a support that is formed integrally with the arm portion 190 and supports the arm portion 190. Part 191.
- the 2nd holding member 192 is provided in multiple, for example, four places.
- the second holding member 192 includes a mounting portion 193 for mounting the outer peripheral portion of the joint surface S J of the support wafer S, extending from the mounting portion 193 upwards, the inner surface from the lower side to the upper side And a taper portion 194 expanding in a taper shape.
- the mounting portion 193 holds an outer peripheral portion within 1 mm from the peripheral edge of the support wafer S, for example.
- the support wafer S delivered to the second holding member 192 is displaced from a predetermined position in the horizontal direction.
- the support wafer S is smoothly guided and positioned by the taper portion 194 and is held by the placement portion 193.
- the second transfer arm 171 can hold the support wafer S horizontally on the second holding member 192.
- the notch 201a is formed in the 2nd holding
- the second holding member 192 of the second transfer arm 171 is moved to the second holding unit 201 by the notch 201a. Interference can be prevented.
- the bonding unit 113 includes a first holding unit 200 that holds and holds the processing target wafer W on the upper surface, and a second holding unit 201 that holds the supporting wafer S on the lower surface by suction. is doing.
- the first holding unit 200 is provided below the second holding unit 201 and is disposed so as to face the second holding unit 201. That is, the wafer W to be processed held by the first holding unit 200 and the support wafer S held by the second holding unit 201 are arranged to face each other.
- a suction tube 210 for sucking and holding the processing target wafer W is provided inside the first holding unit 200.
- the suction pipe 210 is connected to a negative pressure generator (not shown) such as a vacuum pump.
- the first holding unit 200 is made of a material having a strength that does not deform even when a load is applied by a pressurizing mechanism 260 described later, for example, a ceramic such as silicon carbide ceramic or aluminum nitride ceramic.
- a heating mechanism 211 for heating the processing target wafer W is provided inside the first holding unit 200.
- a heater is used for the heating mechanism 211.
- the moving mechanism 220 that moves the first holding unit 200 and the wafer W to be processed in the vertical direction and the horizontal direction is provided below the first holding unit 200.
- the moving mechanism 220 can move the first holding unit 200 three-dimensionally with an accuracy of, for example, ⁇ 1 ⁇ m.
- the moving mechanism 220 includes a vertical moving unit 221 that moves the first holding unit 200 in the vertical direction and a horizontal moving unit 222 that moves the first holding unit 200 in the horizontal direction.
- the vertical moving unit 221 and the horizontal moving unit 222 each have, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw.
- a support member 223 that is extendable in the vertical direction is provided.
- the support member 223 is provided at, for example, three locations outside the first holding unit 200. As shown in FIG. 21, the support member 223 can support the protruding portion 230 provided to protrude downward from the lower surface of the outer periphery of the second holding portion 201.
- the wafer W to be processed on the first holding unit 200 can be aligned in the horizontal direction, and the first holding unit 200 is raised as shown in FIG.
- a bonding space R for bonding the processing wafer W and the support wafer S can be formed.
- the joint space R is a space surrounded by the first holding part 200, the second holding part 201, and the protruding part 230. Further, when the bonding space R is formed, the vertical distance between the processing target wafer W and the supporting wafer S in the bonding space R can be adjusted by adjusting the height of the support member 223.
- lifting pins are provided below the first holding unit 200 for supporting and lifting the wafer to be processed W or the overlapped wafer T from below.
- the elevating pin is inserted through a through hole (not shown) formed in the first holding part 200 and can protrude from the upper surface of the first holding part 200.
- the above-described protruding portion 230 that protrudes downward from the outer peripheral lower surface is formed on the outer peripheral lower surface of the second holding portion 201.
- the protruding portion 230 is formed along the outer periphery of the second holding portion 201. Note that the protruding portion 230 may be formed integrally with the second holding portion 201.
- a sealing material 231 for maintaining the airtightness of the joining space R is provided on the lower surface of the protruding portion 230.
- the sealing material 231 is provided in an annular shape in a groove formed on the lower surface of the protruding portion 230, and for example, an O-ring is used. Moreover, the sealing material 231 has elasticity. Note that the sealing material 231 may be any component having a sealing function, and is not limited to this embodiment.
- a suction tube 240 for sucking and holding the support wafer S is provided inside the second holding unit 201.
- the suction tube 240 is connected to a negative pressure generator (not shown) such as a vacuum pump.
- an intake pipe 241 for taking in the atmosphere of the joint space R is provided inside the second holding unit 201.
- One end of the intake pipe 241 opens at a place where the support wafer S is not held on the lower surface of the second holding unit 201.
- the other end of the intake pipe 241 is connected to a negative pressure generator (not shown) such as a vacuum pump.
- a heating mechanism 242 for heating the support wafer S is provided inside the second holding unit 201.
- a heater is used for the heating mechanism 242.
- the pressurizing mechanism 260 includes a pressure vessel 261 provided so as to cover the processing target wafer W and the support wafer S, and a fluid supply pipe 262 that supplies a fluid, for example, compressed air, to the inside of the pressure vessel 261.
- the support member 250 is configured to be extendable in the vertical direction, and is provided at, for example, three locations outside the pressure vessel 261.
- the pressure vessel 261 is made of, for example, a stainless steel bellows that can be expanded and contracted in the vertical direction.
- the lower surface of the pressure vessel 261 is in contact with the upper surface of the second holding unit 201, and the upper surface is in contact with the lower surface of the support plate 263 provided above the second holding unit 201.
- the fluid supply pipe 262 has one end connected to the pressure vessel 261 and the other end connected to a fluid supply source (not shown). Then, by supplying fluid from the fluid supply pipe 262 to the pressure vessel 261, the pressure vessel 261 extends.
- the pressure vessel 261 extends only in the downward direction, and the second holding portion 201 provided on the lower surface of the pressure vessel 261 is moved downward. Can be pressed.
- the pressure vessel 261 can press the second holding part 201 uniformly in the surface. Adjustment of the load when pressing the second holding unit 201 is performed by adjusting the pressure of the compressed air supplied to the pressure vessel 261.
- the support plate 263 is preferably formed of a member having a strength that does not deform even when the pressure mechanism 260 receives a reaction force of a load applied to the second holding unit 201. Note that the support plate 263 of this embodiment may be omitted, and the upper surface of the pressure vessel 261 may be in contact with the ceiling surface of the processing vessel 100.
- the configuration of the joining devices 31 to 33 is the same as the configuration of the joining device 30 described above, and a description thereof will be omitted.
- the coating device 40 has a processing container 270 that can be sealed inside.
- a loading / unloading port (not shown) for the wafer W to be processed is formed on the side surface of the processing container 270 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.
- a spin chuck 280 that holds and rotates the wafer W to be processed is provided at the center of the processing container 270.
- the spin chuck 280 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W to be processed is provided on the upper surface, for example.
- the wafer W to be processed can be sucked and held on the spin chuck 280 by suction from the suction port.
- a chuck drive unit 281 provided with a motor or the like is provided below the spin chuck 280.
- the spin chuck 280 can be rotated at a predetermined speed by the chuck driving unit 281.
- the chuck driving unit 281 is provided with an elevating drive source such as a cylinder, and the spin chuck 280 can be moved up and down.
- a cup 282 that receives and collects the liquid scattered or dropped from the wafer W to be processed.
- a discharge pipe 283 for discharging the collected liquid
- an exhaust pipe 284 for evacuating and exhausting the atmosphere in the cup 282.
- a rail 290 extending along the Y direction (left-right direction in FIG. 23) is formed on the X direction negative direction (downward direction in FIG. 23) side of the cup 282.
- the rail 290 is formed, for example, from the outside of the cup 282 on the Y direction negative direction (left direction in FIG. 23) side to the outside of the Y direction positive direction (right direction in FIG. 23) side.
- An arm 291 is attached to the rail 290.
- the arm 291 supports an adhesive nozzle 292 as an adhesive supply unit that supplies a liquid adhesive G to the wafer W to be processed, as shown in FIGS. 22 and 23.
- the arm 291 is movable on the rail 290 by a nozzle driving unit 293 shown in FIG.
- the adhesive nozzle 292 can move from the standby part 294 installed on the outer side of the Y direction positive side of the cup 282 to the upper part of the center of the wafer W to be processed in the cup 282, and further the wafer W to be processed It can move in the radial direction of the wafer W to be processed.
- the arm 291 can be moved up and down by a nozzle driving unit 293, and the height of the adhesive nozzle 292 can be adjusted.
- a supply pipe 295 for supplying the adhesive G to the adhesive nozzle 292 is connected to the adhesive nozzle 292 as shown in FIG.
- the supply pipe 295 communicates with an adhesive supply source 296 that stores the adhesive G therein.
- the supply pipe 295 is provided with a supply device group 297 including a valve for controlling the flow of the adhesive G, a flow rate adjusting unit, and the like.
- a back rinse nozzle (not shown) for injecting the cleaning liquid toward the back surface of the processing target wafer W, that is, the non-bonding surface W N may be provided below the spin chuck 280.
- the non-bonded surface W N of the wafer to be processed W and the outer peripheral portion of the wafer to be processed W are cleaned by the cleaning liquid sprayed from the back rinse nozzle.
- the adhesive removing device 41 includes a processing container 300 that can be hermetically sealed.
- a loading / unloading port (not shown) for the overlapped wafer T is formed on the side surface of the processing container 300 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.
- a spin chuck 310 serving as a rotation holding unit that holds and rotates the superposed wafer T is provided in the center of the processing container 300.
- the spin chuck 310 has a horizontal upper surface, and a suction port (not shown) for sucking the overlapped wafer T, for example, is provided on the upper surface.
- the superposed wafer T can be sucked and held on the spin chuck 310 by the suction from the suction port.
- a chuck driving unit 311 provided with a motor or the like is provided below the spin chuck 310.
- the spin chuck 310 can be rotated at a predetermined speed by the chuck driving unit 311.
- the chuck driving unit 311 is provided with an elevating drive source such as a cylinder, for example, and the spin chuck 310 is movable up and down.
- the chuck driving unit 311 is attached to a rail 312 extending along the Y direction (left-right direction in FIG. 24).
- the spin chuck 310 is movable along the rail 312 by a chuck driving unit 311.
- a solvent supply unit 320 that supplies a solvent for the adhesive G is provided.
- a solvent adhesive G supplied from the solvent supply unit 320 the surface of the outer adhesive G E is removed.
- the solvent supply unit 320 is fixed to the processing container 300 by a support member (not shown). Note that the adhesive G protruding from the outer surface of the bonded wafer T, for convenience of explanation, although granted individual designation outer adhesive G E, the adhesive G and outer adhesive G E The same adhesive It is an agent.
- the solvent supply unit 320 includes an upper nozzle 321 disposed above the superposed wafer T and a lower nozzle 322 disposed below the superposed wafer T as shown in FIG.
- the upper nozzle 321 includes a ceiling part 321a and a side wall part 321b, and is provided so as to cover the upper part of the outer peripheral part of the overlapped wafer T.
- the lower nozzle 322 includes a bottom part 322a and a side wall part 322b, and is provided so as to cover the lower part of the outer peripheral part of the overlapped wafer T.
- the solvent supply part 320 has a substantially rectangular parallelepiped shape.
- the side surface of the solvent supply unit 320 on the side of the spin chuck 310 is opened, and the outer peripheral portion of the overlapped wafer T held by the spin chuck 310 is inserted into the opening.
- the upper nozzle 321 and the lower nozzle 322 also function as the solvent supply unit of the present invention.
- the supply port 323 is formed for supplying a solvent adhesive G .
- the supply port 324 is formed for supplying a solvent of the adhesive G.
- the upper nozzle 321 and the lower nozzle 322 are connected to a supply pipe 325 that supplies a solvent for the adhesive G to the upper nozzle 321 and the lower nozzle 322.
- the supply pipe 325 communicates with a solvent supply source 326 that stores the solvent of the adhesive G therein.
- the supply pipe 326 is provided with a supply device group 327 including a valve that controls the flow of the solvent of the adhesive G, a flow rate adjusting unit, and the like.
- a supply device group 327 including a valve that controls the flow of the solvent of the adhesive G, a flow rate adjusting unit, and the like.
- an organic thinner is used as the solvent for the adhesive G
- trimethylbenzene (mesitylene) is used in the present embodiment.
- a discharge pipe 330 is provided for exhausting the atmosphere in the region.
- the discharge pipe 330 is connected to an ejector 331 serving as a discharge mechanism.
- the solvent supply unit 320 is configured as described above, and the solvent of the adhesive G supplied from the supply port 323 of the upper nozzle 321 and the supply port 324 of the lower nozzle 322 to the superposed wafer T is on the outer adhesive GE . And is discharged from the discharge pipe 330. By a solvent of the adhesive G, the surface of the outer adhesive G E is removed, the outer adhesive G E is formed in a predetermined size. The predetermined size of the outer adhesive G E will be described in detail in later.
- a cup (not shown) is provided around the spin chuck 310 and outside the solvent supply unit 320 for receiving and collecting the liquid scattered or dropped from the superposed wafer T. It may be.
- the configuration of this cup is the same as the configuration of the cup 282 in the coating apparatus 40.
- the spin chuck 310 is moved along the rail 312, but the solvent supply unit 320 is moved in the horizontal direction (Y direction in FIGS. 24 and 25). May be.
- the heat treatment apparatus 42 has a processing container 340 whose inside can be closed.
- a loading / unloading port (not shown) for the wafer W to be processed is formed on the side surface of the processing container 340 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.
- a gas supply port 341 for supplying an inert gas such as nitrogen gas is formed inside the processing container 340 on the ceiling surface of the processing container 340.
- a gas supply pipe 343 communicating with the gas supply source 342 is connected to the gas supply port 341.
- the gas supply pipe 343 is provided with a supply device group 344 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like.
- An air inlet 345 for sucking the atmosphere inside the processing container 340 is formed on the bottom surface of the processing container 340.
- An intake pipe 347 that communicates with a negative pressure generator 346 such as a vacuum pump is connected to the intake port 345.
- a heating unit 350 that heat-processes the processing target wafer W and a temperature control unit 351 that controls the temperature of the processing target wafer W are provided.
- the heating unit 350 and the temperature adjustment unit 351 are arranged side by side in the Y direction.
- the heating unit 350 includes an annular holding member 361 that houses the hot plate 360 and holds the outer peripheral portion of the hot plate 360, and a substantially cylindrical support ring 362 surrounding the outer periphery of the holding member 361.
- the hot plate 360 has a thick and substantially disk shape, and can place and heat the wafer W to be processed. Further, the heating plate 360 incorporates a heater 363, for example.
- the heating temperature of the hot plate 360 is controlled by the control unit 400, for example, and the wafer W to be processed placed on the hot plate 360 is heated to a predetermined temperature.
- elevating pins 370 for supporting the wafer W to be processed from below and elevating it are provided.
- the elevating pin 370 can be moved up and down by an elevating drive unit 371. Near the center of the hot plate 360, through holes 372 that penetrate the hot plate 360 in the thickness direction are formed, for example, at three locations. The elevating pin 370 is inserted through the through hole 372 and can protrude from the upper surface of the hot plate 360.
- the temperature adjustment unit 351 has a temperature adjustment plate 380.
- the temperature adjustment plate 380 has a substantially rectangular flat plate shape, and the end surface on the heat plate 360 side is curved in an arc shape.
- two slits 381 along the Y direction are formed in the temperature adjusting plate 380.
- the slit 381 is formed from the end surface of the temperature adjustment plate 380 on the heat plate 360 side to the vicinity of the center of the temperature adjustment plate 380.
- the slit 381 can prevent the temperature adjustment plate 380 from interfering with the elevation pins 370 of the heating unit 350 and the elevation pins 390 of the temperature adjustment unit 351 described later.
- the temperature adjustment plate 380 includes a temperature adjustment member (not shown) such as a Peltier element.
- the cooling temperature of the temperature adjustment plate 380 is controlled by, for example, the control unit 400, and the processing target wafer W placed on the temperature adjustment plate 380 is cooled to a predetermined temperature.
- the temperature adjustment plate 380 is supported by the support arm 382 as shown in FIG.
- a drive unit 383 is attached to the support arm 382.
- the drive unit 383 is attached to a rail 384 extending in the Y direction.
- the rail 384 extends from the temperature adjustment unit 351 to the heating unit 350. With this drive unit 383, the temperature adjustment plate 380 can move between the heating unit 350 and the temperature adjustment unit 351 along the rail 384.
- the elevating pin 390 is inserted through the slit 381 and can protrude from the upper surface of the temperature adjustment plate 380.
- the configuration of the heat treatment apparatuses 42 to 47 is the same as that of the heat treatment apparatus 42 described above, and a description thereof will be omitted.
- the temperature of the superposed wafer T can be adjusted by the heat treatment apparatuses 42 to 47. Further, in order to adjust the temperature of the superposed wafer T, a temperature adjusting device (not shown) may be provided.
- the temperature adjusting device has the same configuration as the heat treatment device 42 described above, and a temperature adjusting plate is used instead of the hot plate 360.
- a cooling member such as a Peltier element is provided inside the temperature adjustment plate, and the temperature adjustment plate can be adjusted to a set temperature.
- the control unit 400 is a computer, for example, and has a program storage unit (not shown).
- the program storage unit stores a program for controlling processing of the processing target wafer W, the supporting wafer S, and the overlapped wafer T in the bonding system 1.
- the program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize the below-described joining process in the joining system 1.
- the program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 400 from the storage medium H.
- FIG. 29 is a flowchart showing an example of main steps of the joining process.
- a cassette C W housing a plurality of the processed the wafer W, the cassette C S accommodating a plurality of support wafer S, and an empty cassette C T is a predetermined cassette mounting plate 11 of the carry-out station 2 Placed.
- the wafer W to be processed in the cassette CW is taken out by the wafer transfer device 22 and transferred to the transition device 50 of the third processing block G3 of the processing station 3.
- the wafer W to be processed is transported with its non-bonding surface W N facing downward.
- the wafer W to be processed is transferred to the coating device 40 by the wafer transfer device 61.
- the wafer W to be processed loaded into the coating device 40 is transferred from the wafer transfer device 61 to the spin chuck 280 and is sucked and held. At this time, the non-bonding surface W N of the wafer W is held by suction.
- the arm 291 moves the adhesive nozzle 292 of the standby unit 294 to above the center of the wafer W to be processed. Thereafter, while rotating the wafer W by the spin chuck 280, and supplies the adhesive G from the adhesive nozzles 292 on the bonding surface W J of wafer W. Supplied adhesive G is diffused into the entire surface of the bonding surface W J of wafer W by the centrifugal force, the adhesive G on the bonding surface W J of the wafer W is applied (step of FIG. 29 A1 ).
- the wafer W to be processed is transferred to the heat treatment apparatus 42 by the wafer transfer apparatus 61.
- the inside of the heat treatment apparatus 42 is maintained in an inert gas atmosphere.
- the superposed wafer T is transferred from the wafer transfer apparatus 61 to the lift pins 390 that have been lifted and waited in advance. Subsequently, the elevating pins 390 are lowered, and the processing target wafer W is placed on the temperature adjustment plate 380.
- the temperature adjustment plate 380 is moved along the rail 384 to the upper side of the heat plate 360 by the driving unit 383, and the wafer W to be processed is transferred to the lift pins 370 that have been lifted and waited in advance. Thereafter, the elevating pins 370 are lowered, and the wafer W to be processed is placed on the hot plate 360. Then, the wafer W to be processed on the hot plate 360 is heated to a predetermined temperature, for example, 100 ° C. to 300 ° C. (step A2 in FIG. 29). By performing the heating by the hot plate 360, the adhesive G on the processing target wafer W is heated and the adhesive G is cured.
- a predetermined temperature for example, 100 ° C. to 300 ° C.
- the elevating pins 370 are raised, and the temperature adjusting plate 380 is moved above the hot plate 360.
- the wafer W to be processed is transferred from the lift pins 370 to the temperature adjustment plate 380, and the temperature adjustment plate 380 moves to the wafer transfer region 60 side.
- the temperature of the processing target wafer W is adjusted to a predetermined temperature.
- the wafer W to be processed that has been heat-treated by the heat treatment apparatus 42 is transferred to the bonding apparatus 30 by the wafer transfer apparatus 61.
- the wafer W to be processed transferred to the bonding apparatus 30 is transferred from the wafer transfer apparatus 61 to the transfer arm 120 of the transfer unit 110 and then transferred from the transfer arm 120 to the wafer support pins 121. Thereafter, the wafer W to be processed is transferred from the wafer support pins 121 to the reversing unit 111 by the first transfer arm 170 of the transfer unit 112.
- the wafer W to be processed transferred to the reversing unit 111 is held by the holding member 151 and moved to the position adjusting mechanism 160. Then, the position adjusting mechanism 160 adjusts the position of the notch portion of the processing target wafer W to adjust the horizontal direction of the processing target wafer W (step A3 in FIG. 29).
- the wafer W to be processed is transferred from the reversing unit 111 to the bonding unit 113 by the first transfer arm 170 of the transfer unit 112.
- the to-be-processed wafer W conveyed to the junction part 113 is mounted in the 1st holding
- the supporting wafer S is processed following the processing target wafer W.
- the support wafer S is transferred to the bonding apparatus 30 by the wafer transfer device 61.
- description is abbreviate
- the support wafer S transferred to the bonding apparatus 30 is transferred from the wafer transfer apparatus 61 to the transfer arm 120 of the transfer unit 110 and then transferred from the transfer arm 120 to the wafer support pins 121. Thereafter, the support wafer S is transferred from the wafer support pins 121 to the reversing unit 111 by the first transfer arm 170 of the transfer unit 112.
- the support wafer S transferred to the reversing unit 111 is held by the holding member 151 and moved to the position adjusting mechanism 160. Then, the position adjustment mechanism 160 adjusts the position of the notch portion of the support wafer S to adjust the horizontal direction of the support wafer S (step A5 in FIG. 29).
- the support wafer S whose horizontal direction is adjusted is moved in the horizontal direction from the position adjustment mechanism 160 and moved upward in the vertical direction, and then the front and back surfaces thereof are reversed (step A6 in FIG. 29). That is, the bonding surface S J of the support wafer S is directed downward.
- the support wafer S is moved downward in the vertical direction, and then transferred from the reversing unit 111 to the bonding unit 113 by the second transfer arm 171 of the transfer unit 112.
- second transfer arm 171 since it holds only the outer peripheral portion of the joint surface S J of the support wafer S, for example, that the joint surface S J is soiled by particles or the like adhering to the second transfer arm 171 There is no.
- the support wafer S transferred to the bonding unit 113 is sucked and held by the second holding unit 201 (step A7 in FIG. 29).
- the supporting wafer S is held in a state where the bonding surfaces S J is directed downward of the support wafer S.
- the bonding apparatus 30 when the processing target wafer W and the support wafer S are held by the first holding unit 200 and the second holding unit 201, respectively, a moving mechanism is provided so that the processing target wafer W faces the support wafer S.
- the horizontal position of the first holding unit 200 is adjusted by 220 (step A8 in FIG. 29).
- the pressure in the pressure vessel 261 of the pressurizing mechanism 260 may be set to atmospheric pressure, or the upper surface of the second holding unit 201 and the pressure vessel 261 may be maintained. A gap may be formed between the two.
- the first holding unit 200 is raised by the moving mechanism 220 and the support member 223 is extended to support the second holding unit 201 on the support member 223.
- the vertical distance between the wafer to be processed W and the support wafer S is adjusted to be a predetermined distance (step A9 in FIG. 29).
- the predetermined distance is such that when the sealant 231 comes into contact with the first holding unit 200 and the center of the second holding unit 201 and the supporting wafer S is bent as described later, the supporting wafer S Is the height at which the central portion of the wafer contacts the wafer W to be processed. In this way, a sealed joint space R is formed between the first holding part 200 and the second holding part 201.
- the atmosphere of the joint space R is sucked from the suction pipe 241.
- the pressure applied to the upper surface of the second holding portion 201 and the bonding space R are applied to the second holding portion 201.
- the center portion of the second holding portion 201 is bent, and the center portion of the support wafer S held by the second holding portion 201 is also bent.
- the atmosphere of the joining space R is further sucked and the inside of the joining space R is depressurized.
- the second holding unit 201 cannot hold the support wafer S
- the support wafer S as shown in FIG. is dropped down
- the bonding surface S J entire support wafer S comes into contact with the bonding surface W J entire treated wafer W.
- the support wafer S sequentially comes into contact with the processing target wafer W from the central portion toward the radially outer side. That is, for example, even when air that can be a void exists in the bonding space R, the air is always present outside the portion where the support wafer S is in contact with the wafer W to be processed. It is possible to escape from between the processing wafer W and the support wafer S. In this way, the processing target wafer W and the support wafer S are bonded by the adhesive G while suppressing the generation of voids (step A10 in FIG. 29).
- the height of the support member 223 is adjusted, and the lower surface of the second holding unit 201 is brought into contact with the non-joint surface SN of the support wafer S.
- the sealing material 231 is elastically deformed, and the first holding unit 200 and the second holding unit 201 are in close contact with each other.
- maintenance part 201 is made into predetermined pressure, for example, 0.5 MPa with the pressurization mechanism 260. Press down. Then, the processing target wafer W and the support wafer S are more firmly bonded and bonded (step A11 in FIG. 29).
- the overlapped wafer T in which the wafer W to be processed and the support wafer S are bonded is transferred from the bonding unit 110 to the delivery unit 110 by the first transfer arm 170 of the transfer unit 112.
- the overlapped wafer T transferred to the transfer unit 110 is transferred to the transfer arm 120 via the wafer support pins 121, and further transferred from the transfer arm 120 to the wafer transfer device 61.
- the overlapped wafer T is transferred to the heat treatment apparatus 43 by the wafer transfer apparatus 61.
- the temperature of the superposed wafer T is adjusted to a predetermined temperature, for example, normal temperature (23 ° C.).
- the overlapped wafer T is transferred to the adhesive removing device 41 by the wafer transfer device 61.
- the overlapped wafer T carried into the adhesive removing device 41 is transferred from the wafer transfer device 61 to the spin chuck 310 and is sucked and held. At this time, the non-bonding surface W N of the wafer W is held by suction. Further, the spin chuck 310 is retracted to a position where the overlapped wafer T does not collide with the solvent supply unit 320.
- the spin chuck 310 is lowered to a predetermined position, the spin chuck 310 is further moved in the horizontal direction toward the solvent supply unit 320, and the outer peripheral portion of the overlapped wafer T is moved to the upper nozzle 321 in the solvent supply unit 320. And the lower nozzle 322. At this time, the overlapped wafer T is located in the middle between the upper nozzle 321 and the lower nozzle 322.
- the solvent of the adhesive G is supplied from the upper nozzle 321 and the lower nozzle 322 to the outer peripheral portion of the superposed wafer T while rotating the superposed wafer T by the spin chuck 310.
- Solvent supplied adhesive G flows by the centrifugal force caused by rotation of the injection pressure and the bonded wafer T from the nozzle 321 and 322, until the outer adhesive G E as shown in FIG. 35. And this by a solvent of the adhesive G is the surface of the outer adhesive G E is removed, the outer adhesive G E is formed in a predetermined size (step A12 in FIG. 29).
- a solvent or adhesive G after removal of the surface of the outer adhesive G E the atmosphere in the solvent supply unit 320 is forcibly discharged from the discharge pipe 330 by the ejector 331.
- the wafer W to be processed is thinned.
- the wafer W to be processed is thinned, if the outer adhesive GE is too larger than the position of the end of the wafer W to be processed (the dashed line in FIG. 35), the wafer W to be processed is thinned. an outer adhesive G E adhere to the device. If it does so, the to-be-processed wafer W cannot be thinned appropriately.
- the outer adhesive GE is too smaller than the position of the end of the wafer W to be processed after being thinned, the outer periphery of the wafer W to be processed may be damaged.
- step A12 the solvent of the adhesive G from the upper nozzle 321 and lower nozzle 322, the surface of the outer adhesive G E is evenly removed from the upper and lower. That is, the upper end of the outer adhesive G E after removal of the surface distance between the lower surface of the support wafer S (two-dot chain line in FIG. 35), the distance between the lower end portion and the wafer W of the outer adhesive G E Is equal to By removing this way the surface of the outer adhesive G E vertically equally, it is possible to properly carry out the transport and processing of the subsequent polymerization wafer T.
- step A12 by the control unit 400 controls the rotational speed of the bonded wafer T by controlling the spin chuck 310, the outer adhesive G E by adjusting the amount of removing the surface of the outer adhesive G E Are formed in a predetermined size. Further, the removal amount of the surface of the outer adhesive G E, the supply amount of the adhesive G, supply time is controlled by the discharge amount and the like by the supply timing or ejector 331,.
- Bonded wafer T of which the surface is removed outside the adhesive G E with adhesive remover 41 is transferred to the transition unit 51 by the wafer transfer apparatus 61, a predetermined cassette placement by the wafer transfer apparatus 22 of the subsequent unloading station 2 It is conveyed to the cassette C T of the plate 11. In this way, a series of bonding processing of the processing target wafer W and the supporting wafer S is completed.
- step A12 the outer adhesive GE is formed in such a size that the position of the lower end portion thereof coincides with the position of the end portion of the wafer W to be processed after thinning. For this reason, it does not adhere to the thinning device of the wafer W to be processed provided outside the bonding system 1 and the outer peripheral portion of the wafer W to be bonded is not damaged. Further, the surface of the outer adhesive G E in step A12 so is removed vertically equally, it is possible to properly carry out the transport and processing of the subsequent polymerization wafer T.
- step A12 the rotation speed of the superposed wafer T by the spin chuck 310 is controlled, and further, the supply amount, supply time, supply timing, or discharge amount by the ejector 331 of the adhesive G from the nozzles 321 and 322 is controlled. , it is possible to appropriately form the outer adhesive G E to a predetermined size.
- the solvent supply unit 320 may be provided at a plurality of locations, in the illustrated example, at two locations. In this case, for example, one solvent supply unit 320 supplies the solvent of the adhesive G only from above the superposed wafer T, and the other solvent supply unit 320 supplies the solvent of the adhesive G only from below the superposed wafer T. Also good. In any case, by supplying the solvent adhesive G to the outer adhesive G E from a plurality of solvent supply unit 320 can be more efficiently removed the surface of the outer adhesive G E. Therefore, the throughput of the bonding process in the bonding system 1 can be improved.
- the solvent of the adhesive G is supplied onto the outer periphery of the wafer W to be processed, and the adhesive G on the outer periphery is supplied. May be removed.
- the removal of the adhesive G on the outer peripheral portion of the wafer W to be processed may be performed before or after the heat treatment of the wafer W to be processed in the step A2.
- the coating apparatus 40 supplies the solvent for the adhesive G as shown in FIG.
- a solvent nozzle 500 is provided as a solvent supply unit.
- the solvent nozzle 500 is supported by the arm 501.
- a rail 502 extending along the Y direction (left and right direction in FIG. 38) is formed between the cup 282 and the rail 290. As shown in FIG.
- the rail 502 is formed from the outside of the cup 282 on the Y direction negative direction (left direction in FIG. 38) side to the vicinity of the center of the cup 282.
- the arm 501 is movable on the rail 502 by a nozzle driving unit 503.
- the solvent nozzle 500 can move from the standby part 504 installed on the outer side of the Y direction negative side of the cup 282 to above the outer peripheral part of the wafer W to be processed in the cup 282, and further on the wafer W to be processed. Can be moved in the radial direction of the wafer W to be processed.
- the arm 501 can be moved up and down by a nozzle driving unit 503, and the height of the solvent nozzle 500 can be adjusted.
- the solvent nozzle 500 is connected to a supply pipe 505 for supplying the solvent of the adhesive G to the solvent nozzle 500 as shown in FIG.
- the supply pipe 505 communicates with a solvent supply source 506 that stores the solvent of the adhesive G therein.
- the supply pipe 505 is provided with a supply device group 507 including a valve that controls the flow of the solvent of the adhesive G, a flow rate adjusting unit, and the like.
- a supply device group 507 including a valve that controls the flow of the solvent of the adhesive G, a flow rate adjusting unit, and the like.
- an organic thinner is used as the solvent for the adhesive G
- trimethylbenzene (mesitylene) is used in the present embodiment.
- the arm 501 moves the solvent nozzle 500 of the standby unit 504 to above the outer periphery of the wafer W to be processed.
- the solvent nozzle 500 as shown in FIG. 39, the distance from the outer surface W S of the processing target wafer W L, are positioned for example at the position of 5 mm ⁇ 7.5 mm.
- Solvent supplied adhesive G flows over the outer peripheral portion W E of the wafer W toward the outer surface W S by centrifugal force.
- the adhesive G on the outer peripheral portion W E of the wafer W is removed by the adhesive G.
- the predetermined distance L from the outer surface W S of the wafer W in the outer peripheral portion W E in this step, the control unit 400, is applied at least type of adhesive G, in step A1 on wafer W It is determined based on the target film thickness of the adhesive G, the heat treatment temperature for heating the wafer to be processed W in the step A2 or the step A11, or the pressure for pressing the wafer to be processed W and the support substrate in the step A11.
- step A11 prior to bonding the support wafer S and wafer W in step A11, since the removal of adhesive G on the outer peripheral portion W E of the pre-wafer W, in step A11 it is possible to suppress the outer adhesive G E extend beyond the bonded wafer T. And further removing the surface of the outer adhesive G E protruding in step A12. Since such polymerization protrude from the wafer T outer adhesive G E adjusted in two stages, it is possible to properly form the outer adhesive G E by a predetermined magnitude. Therefore, the wafer W to be processed and the support wafer S can be bonded more appropriately.
- a coating of adhesive G onto the processed the wafer W since the removal of adhesive G on the outer peripheral portion W E, an external device of the coating apparatus 40, for example, the wafer transfer unit 61, etc. It can avoid more reliably that the adhesive agent G adheres to.
- Another adhesive removing device 510 is stacked on the agent removing device 41.
- the other adhesive removing device 510 has a configuration in which the adhesive nozzle 292 and the members 290, 291 and 294 to 297 associated therewith in the coating device 40 are omitted, and the solvent nozzle 500 and the members 501 to 507 associated therewith are provided. have.
- the adhesive G is applied onto a wafer W in step A1, after heating the wafer W to a predetermined temperature in the step A2, the solvent nozzle 500 to the outer peripheral portion W E of the wafer W Supply solvent for adhesive G. Then, to remove the adhesive G on the outer peripheral portion W E of the wafer W by the adhesive G.
- the step of removing the adhesive G on the outer peripheral portion W E is omitted because it is similar to the above embodiment. Further, the subsequent steps A3 to A12 are also the same as the steps A3 to A12 in the above embodiment, and thus the description thereof is omitted.
- the removal of the adhesive G of an outer peripheral portion W E after step A2 performs the removal of the surface of the outer adhesive G E in step A12, the outer adhesive G E extend beyond the bonded wafer T because of 2 levels, it can be appropriately formed by the outer adhesive G E of a predetermined size. Further, after curing by heating the adhesive G, since the removal of adhesive G on the outer peripheral portion W E of the processing the wafer W, it can be more accurately removed adhesive G.
- the wafer to be processed W and the support wafer S are bonded in a state where the wafer to be processed W is disposed on the lower side and the support wafer S is disposed on the upper side.
- the support wafer S may be disposed upside down.
- a step A1 ⁇ A4 described above with respect to the support wafer S applying an adhesive agent G on the bonding surface S J of the support wafer S.
- the above-described steps A5 to A7 are performed on the wafer W to be processed, and the front and back surfaces of the wafer W to be processed are reversed.
- the above-described steps A8 to A12 are performed, and the support wafer S and the wafer W to be processed are bonded.
- the adhesive G is applied to either the processing target wafer W or the support wafer S in the coating apparatus 40, but the adhesive G is applied to both the processing target wafer W and the support wafer S. May be applied.
- the wafer W to be processed is heated to a predetermined temperature of 100 ° C. to 300 ° C. in the step A2, but the heat treatment of the wafer W to be processed may be performed in two stages.
- the heat treatment apparatus 42 heats the first heat treatment temperature, for example, 100 ° C. to 150 ° C.
- the heat treatment apparatus 45 heats the second heat treatment temperature, for example, 150 ° C. to 300 ° C.
- the temperature of the heating mechanism itself in the heat treatment apparatus 42 and the heat treatment apparatus 45 can be made constant. Therefore, it is not necessary to adjust the temperature of the heating mechanism, and the throughput of the bonding process between the processing target wafer W and the supporting wafer S can be further improved.
- the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.
- the present invention is not limited to this example and can take various forms.
- the present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.
- FPD flat panel display
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Abstract
Description
その後、前記接合工程において被処理基板と支持基板の間の接着剤が、当該被処理基板と支持基板を接合してなる重合基板の外側面からはみ出た外側接着剤に対して、接着剤の溶剤を供給し、前記外側接着剤が所定の大きさに形成されるように当該外側接着剤の表面を除去する接着剤除去工程と、
を有する。
接着剤を介して、被処理基板と支持基板を押圧して接合する接合装置と、
被処理基板と支持基板の間の接着剤が、当該被処理基板と支持基板を接合してなる重合基板の外側面からはみ出た外側接着剤に対して、接着剤の溶剤を供給する溶剤供給部を備え、前記溶剤供給部から供給された接着剤の溶剤によって、前記外側接着剤が所定の大きさに形成されるように当該外側接着剤の表面を除去する接着剤除去装置と、を有する。
30~33 接合装置
40 塗布装置
41 接着剤除去装置
42~47 熱処理装置
292 接着剤ノズル
310 スピンチャック
320 溶剤供給部
321 上部ノズル
322 下部ノズル
331 エジェクタ
400 制御部
500 溶剤ノズル
510 他の接着剤除去装置
G 接着剤
GE 外側接着剤
S 支持ウェハ
T 重合ウェハ
W 被処理ウェハ
Claims (20)
- 被処理基板と支持基板を接合する接合方法であって、
接着剤を介して、被処理基板と支持基板を押圧して接合する接合工程と、
その後、前記接合工程において被処理基板と支持基板の間の接着剤が、当該被処理基板と支持基板を接合してなる重合基板の外側面からはみ出た外側接着剤に対して、接着剤の溶剤を供給し、前記外側接着剤が所定の大きさに形成されるように当該外側接着剤の表面を除去する接着剤除去工程と、
を有する。 - 請求項1に記載の接合方法において、
前記接着剤除去工程後、被処理基板は薄化され、
前記接着剤除去工程における前記外側接着剤の所定の大きさは、前記外側接着剤の端部の位置と薄化後の被処理基板の端部の位置が一致する大きさである。 - 請求項1に記載の接合方法において、
前記接着剤除去工程においては、前記外側接着剤の被処理基板側及び支持基板側から接着剤の溶剤を供給する。 - 請求項1に記載の接合方法において、
前記接着剤除去工程において、重合基板を回転させながら、前記外側接着剤に対して接着剤の溶剤を供給する。 - 請求項4に記載の接合方法において、
前記接着剤除去工程において、重合基板の回転数を制御して、前記外側接着剤を所定の大きさに形成する。 - 請求項4に記載の接合方法において、
前記接着剤除去工程において、前記外側接着剤に対して、平面視における複数箇所から接着剤の溶剤を供給する。 - 請求項1に記載の接合方法において、
前記接着剤除去工程において、前記外側接着剤の表面を除去した後の接着剤の溶剤を、強制的に排出する。 - 請求項1に記載の接合方法において、
前記接合工程の前に、被処理基板又は支持基板に接着剤を塗布する接着剤塗布工程と、
前記接着剤塗布工程の後であって前記接合工程の前に、接着剤が塗布された被処理基板又は支持基板の外周部上に接着剤の溶剤を供給し、当該外周部上の接着剤を除去する他の接着剤除去工程と、を有する。 - 請求項8に記載の接合方法において、
前記他の接着剤除去工程の後であって前記接合工程の前に、接着剤が塗布されて前記外周部上の接着剤が除去された被処理基板又は支持基板を、所定の温度に加熱する熱処理工程を有する。 - 請求項8に記載の接合方法において、
前記接着剤塗布工程の後であって前記他の接着剤除去工程の前に、接着剤が塗布された被処理基板又は支持基板を所定の温度に加熱する熱処理工程を有する。 - 被処理基板と支持基板を接合する接合システムであって、
接着剤を介して、被処理基板と支持基板を押圧して接合する接合装置と、
被処理基板と支持基板の間の接着剤が、当該被処理基板と支持基板を接合してなる重合基板の外側面からはみ出た外側接着剤に対して、接着剤の溶剤を供給する溶剤供給部を備え、前記溶剤供給部から供給された接着剤の溶剤によって、前記外側接着剤が所定の大きさに形成されるように当該外側接着剤の表面を除去する接着剤除去装置と、
を有する。 - 請求項11に記載の接合システムにおいて、
前記接着剤除去装置において前記外側接着剤の表面を除去後、被処理基板は薄化され、
前記接着剤除去装置において形成される前記外側接着剤の所定の大きさは、前記外側接着剤の端部の位置と薄化後の被処理基板の端部の位置が一致する大きさである。 - 請求項11に記載の接合システムにおいて、
前記溶剤供給部は、前記外側接着剤の被処理基板側及び支持基板側にそれぞれ配置されている。 - 請求項11に記載の接合システムにおいて、
前記接着剤除去装置は、重合基板を保持して回転させる回転保持部を有し、
前記接着剤除去装置において、前記回転保持部によって重合基板を回転させながら、前記溶剤供給部から前記外側接着剤に対して接着剤の溶剤が供給される。 - 請求項14に記載の接合システムにおいて、
前記接着剤除去装置において重合基板の回転数を制御して、前記外側接着剤を所定の大きさに形成するように、前記回転保持部を制御する制御部を有する。 - 請求項14に記載の接合システムにおいて、
前記溶剤供給部は、前記外側接着剤に対して、平面視における複数箇所に配置されている。 - 請求項11に記載の接合システムにおいて、
前記接着剤除去装置は、前記外側接着剤の表面を除去後の接着剤の溶剤を強制的に排出する排出機構を有する。 - 請求項11に記載の接合システムにおいて、
被処理基板又は支持基板に接着剤を供給して塗布する接着剤供給部と、
前記接着剤供給部によって接着剤が塗布された被処理基板又は支持基板の外周部上に接着剤の溶剤を供給し、当該外周部上の接着剤を除去する他の溶剤供給部と、を有する。 - 請求項18に記載の接合システムにおいて、
前記接着剤供給部と前記他の溶剤供給部は、一の塗布装置内に設けられ、
前記塗布装置において接着剤が塗布されて前記外周部上の接着剤が除去された被処理基板又は支持基板を、所定の温度に加熱する熱処理装置を有する。 - 請求項18に記載の接合システムにおいて、
前記接着剤供給部を備えた塗布装置と、
前記塗布装置において接着剤が塗布された被処理基板又は支持基板を、所定の温度に加熱する熱処理装置と、
前記熱処理装置において所定の温度に加熱された被処理基板又は支持基板の前記外周部上に、接着剤の溶剤を供給する前記他の溶剤供給部を備えた他の接着剤除去装置と、を有する。
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| US14/342,704 US9463612B2 (en) | 2011-09-07 | 2012-08-30 | Joining method and joining system |
| KR1020147005336A KR101861891B1 (ko) | 2011-09-07 | 2012-08-30 | 접합 방법 및 접합 시스템 |
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| JP6295066B2 (ja) * | 2013-11-20 | 2018-03-14 | 東京応化工業株式会社 | 処理方法 |
| JP6321366B2 (ja) * | 2013-12-16 | 2018-05-09 | 東京応化工業株式会社 | 積層体、積層体の製造方法、及び基板の処理方法 |
| KR101554815B1 (ko) * | 2014-03-07 | 2015-09-21 | (주)에스티아이 | 관통전극 웨이퍼 제조방법 |
| KR101630573B1 (ko) | 2015-03-23 | 2016-06-14 | 한국광기술원 | 접합 장치 및 방법 |
| JP6769022B2 (ja) | 2015-10-07 | 2020-10-14 | 株式会社リコー | 液体吐出ヘッド、液体吐出ユニット、液体を吐出する装置 |
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