WO2013015722A1 - Method for growing a heterostructure for an infrared photodetector - Google Patents
Method for growing a heterostructure for an infrared photodetector Download PDFInfo
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- WO2013015722A1 WO2013015722A1 PCT/RU2012/000621 RU2012000621W WO2013015722A1 WO 2013015722 A1 WO2013015722 A1 WO 2013015722A1 RU 2012000621 W RU2012000621 W RU 2012000621W WO 2013015722 A1 WO2013015722 A1 WO 2013015722A1
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- H10P14/3421—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
- H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/146—Superlattices; Multiple quantum well structures
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- H10P14/22—
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- H10P14/3442—
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
Definitions
- the technical field The invention relates to a technology for growing semiconductor heterostructures with multiple quantum wells by molecular beam epitaxy (MBE) and can be used in the manufacture of devices based on photodetector arrays with sensitivity in the deep infrared range (8-12 microns). Photosensitivity in the indicated spectral range can be ensured at low temperatures (less than 77 ° K) due to energy absorption during indirect carrier transitions between subbands in the active region of the heterostructure, consisting of alternating pairs of quantum wells (material with a smaller band gap) and barriers (material with a larger band gap).
- MBE molecular beam epitaxy
- quantum wells are usually modulated by doping (for example, with a donor impurity -
- Si to high concentrations (including the so-called “delta doping” is used), however, it is necessary to take into account the phenomenon of surface segregation, which leads to heterogeneity of the impurity concentration, most pronounced at elevated growth temperatures;
- DX- centers recombination centers
- a known method of growing a heterostructure for an infrared detector including a substrate and overlying semiconductor layers - contact and layers that form an active region containing 50 GaAs quantum wells and AlGaAs quantum barriers.
- Quantum wells are doped with Si with a doping level of 3.3 - 10 18 cm "3.
- the substrate temperature is maintained at 690 ° C, see D. K. Sengupta et al. Growth and Characterization of n-Type GaAs / AlGaAs Quantum Well Infrared Photodetector on GaAs -on- Si Substrate, Journal of Electronic Materials, Vol. 27, No.
- a known method of growing a heterostructure for an infrared photodetector including a substrate and overlying semiconductor layers forming an active region containing many silicon doped quantum wells, as well as many quantum barriers.
- the method is carried out by the MPE method by heating the substrate in vacuum at t ° 580 ° C, reagents Ga and As are fed into the quantum wells, and A1, Ga and As are sent to the quantum barriers.
- Si quantum well doping level 1 x 10 1 8 cm " 3, see K. L. Tsai et al., Influence of oxygen on the performance of GaAs / AlGaAs quantum wellinfrared photodetectors, Journal of Applied Physics 76 (1), 1 July 1994, PP 274-277 (copy attached).
- the process temperature is reduced in comparison with the analogue described above, which prevents the thermal instability of GaAs and provides a certain sharpness of heteroboundaries, however, the low temperature of the process causes an increased number of crystalline defects (dislocations and deep impurities, such as oxygen), which are recombination centers (DX centers) that reduce the absorption efficiency in quantum wells and, accordingly, the sensitivity and detectability of an infrared detector.
- DX centers recombination centers
- the objective of the present invention is to reduce the number of crystalline defects and thereby increase the sensitivity (signal-to-noise ratio) and detection ability (minimum value of the detected photodetector signal).
- a method for growing a heterostructure for an infrared photodetector comprising a substrate and overlying semiconductor layers — contact and layers forming an active region containing a plurality of quantum wells and barriers by the molecular beam method epitaxy by heating the substrate in a vacuum and alternately supplying reagent fluxes to quantum wells and barriers, as well as doping impurities - Si into quantum wells, whereby reagents: Ga and As are fed into quantum wells, and A1, Ga and As, into quantum barriers, quantum wells additionally supply A1 in an amount ensuring its molar fraction in the quantum well of 0.02-0.1 0, while in the process of growing the layers forming the active region, the substrate temperature is maintained within 700 - 750 ° C, and the level of doping of quantum pits are supported within (2 - 5) x 10 1 7 cm " 3.
- the implementation of the distinguishing features of the invention leads to an important new property of the claimed method: ensuring the sharpness of heterointerfaces along with a decrease in the number of crystalline defects.
- submission to A1 quantum wells in an amount that ensures its molar fraction in the quantum well in the range of 0.02-0.10 increases the thermal stability of the quantum well material and prevents a decrease in the sharpness of the heteroboundary even at sufficiently high (700 - 750 ° C) temperatures, which the number of crystalline defects is significantly reduced.
- the lower limit - 700 ° C is due to the fact that at temperatures above 700 ° C the adsorption of impurities (oxygen atoms) is negligible, an increase in the process temperature above 750 ° C is not rational, as it does not give an additional effect. In this case, the surface segregation of Si atoms is reduced due to a decrease in the doping level to (2 - 5) 1 7 3
- a decrease in the doping level to the above values became possible due to the fact that at a process temperature increased to 700–750 ° C, the number of defects decreases and, accordingly, the sensitivity of the active region of the heterostructure increases, which compensates for the decrease in sensitivity associated with the doping level.
- a crystalline substrate 2 for growing a heterostructure.
- cryopanels 3 with liquid nitrogen are used. Maneuvering the substrate 2 and its heating carried out using a manipulator 4.
- the initial reagents in the form of atomic beams of group III metals (A1, Ga) and dopants (Si) are fed to the substrate 2 from evaporators 5, and arsenic (As) is supplied through a source with cracker 6.
- the substrate 2 is heated to a temperature of 580-600 ° C to remove its own oxide by thermal decomposition. Then, flows of As from the source 6 and Ga and Si atoms from the evaporators 5 are simultaneously fed onto the heated surface of the substrate 2 to grow the lower contact layer of a given thickness and carrier concentration. Then, in a short period of time, the temperature of the substrate is simultaneously increased to values in the range of 700-750 ° C, the flow of Si atoms is blocked, and the atomic stream A1 is fed onto the substrate to grow the first barrier layer.
- the atomic fluxes A1 are switched so that the molar fraction of aluminum is in the range of 0.02-0, 10, and the flux of Si atoms is opened, providing a doping level of (2-5) x 10 cm " quantum well.
- the growth of the given thickness of the quantum well is carried out, after which the switching back to the growth mode of the barrier layer is carried out.
- the cycle of growing the quantum well / barrier pair is repeated a predetermined number of times, after which the flow of A1 atoms is blocked and the upper GaAs contact layer is grown.
- the heterostructure grown for the infrared photodetector according to the claimed method has a significantly lower concentration of deep centers recombination in the barrier layers and, while ensuring the sharpness of the heteroboundaries, respectively, has a high conversion efficiency of the incident radiation.
- the implementation of the method is carried out using known equipment and materials. According to the applicant, the invention meets the criterion of "Industrial Applicability" ("IA").
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Abstract
Description
Способ выращивания гетероструктуры для инфракрасного The method of growing a heterostructure for infrared
фотодетектора photo detector
Область техники Изобретение относится к технологии выращивания полупроводниковых гетероструктур со множественными квантовыми ямами методом молекулярно-пучковой эпитаксии (МПЭ) и может быть использовано при изготовлении устройств на основе фотоприемных матриц с чувствительностью в глубоком инфракрасном диапазоне (8- 12 мкм). Фоточувствительность в указанном спектральном диапазоне может быть обеспечена при низких температурах (менее 77°К) за счет поглощения энергии при непрямых переходах носителей между подзонами в активной области гетероструктуры, состоящей из чередующихся пар квантовых ям (материала с меньшей шириной запрещенной зоны) и барьеров (материала с большей шириной запрещенной зоны). При выращивании таких гетероструктур необходимо решить ряд взаимосвязанных проблем: The technical field The invention relates to a technology for growing semiconductor heterostructures with multiple quantum wells by molecular beam epitaxy (MBE) and can be used in the manufacture of devices based on photodetector arrays with sensitivity in the deep infrared range (8-12 microns). Photosensitivity in the indicated spectral range can be ensured at low temperatures (less than 77 ° K) due to energy absorption during indirect carrier transitions between subbands in the active region of the heterostructure, consisting of alternating pairs of quantum wells (material with a smaller band gap) and barriers (material with a larger band gap). At growing such heterostructures it is necessary to solve a number of interrelated problems:
- абсолютная величина поглощения в одной квантовой яме достаточно низка, поэтому в активной области гетероструктуры используют несколько десятков (от 20 до 50) пар квантовых ям и барьеров, химический состав и толщина которых должны быть выдержаны как можно более точно для обеспечения необходимой спектральной чувствительности; - the absolute value of absorption in one quantum well is quite low, therefore several tens (from 20 to 50) pairs of quantum wells and barriers are used in the active region of the heterostructure, the chemical composition and thickness of which must be maintained as accurately as possible to ensure the necessary spectral sensitivity;
- для увеличения эффективности поглощения квантовые ямы обычно модулированно легируют (например, донорной примесью - - to increase the absorption efficiency, quantum wells are usually modulated by doping (for example, with a donor impurity -
Si) до высоких концентраций (в том числе, применяется так называемое «дельта-легирование»), однако при этом необходимо учитывать явление поверхностной сегрегации, приводящее к неоднородности концентрации примеси, наиболее выраженное при повышенных температурах роста; Si) to high concentrations (including the so-called “delta doping” is used), however, it is necessary to take into account the phenomenon of surface segregation, which leads to heterogeneity of the impurity concentration, most pronounced at elevated growth temperatures;
- для обеспечения точности поддержания состава и толщины слоев активной области и резкости гетерограниц между ними предпочтительно снижать температуру выращивания, однако при этом в материалах слоев образуется повышенное количество кристаллических дефектов (дислокаций и глубоких примесей, главным образом, кислорода), являющихся центрами рекомбинации (DX-центрами), снижающими эффективность поглощения в квантовых ямах; - to ensure the accuracy of maintaining the composition and thickness of the layers of the active region and the sharpness of the heterointerfaces between them, it is preferable to lower the growth temperature, however, an increased amount of crystalline defects (dislocations and deep impurities, mainly oxygen), which are recombination centers (DX- centers) that reduce the absorption efficiency in quantum wells;
- повышение концентрации легирующей примеси в квантовых ямах увеличивает чувствительность активной области, однако приводит к повышенному «темновому» току фотодетектора, и, следовательно, к необходимости снижения рабочей температуры. Предшествующий уровень техники - increasing the concentration of the dopant in quantum wells increases the sensitivity of the active region, however, leads to an increased "dark" current of the photodetector, and, therefore, to the need to reduce the operating temperature. State of the art
Известен способ выращивания гетероструктуры для инфракрасного детектора, включающей подложку и вышележащие полупроводниковые слои - контактные и слои, образующие активную область, содержащую 50 квантовых ям GaAs и квантовых барьеров AlGaAs. Квантовые ямы легированы Si с уровнем легирования 3,3 - 1018 см"3. Температуру подложки поддерживают 690°С, см. D. К. Sengupta и др, Growth and Characterization of n- Type GaAs/ AlGaAs Quantum Well Infrared Photodetector on GaAs-on- Si Substrate, Journal of Electronic Materials, Vol. 27, No. 7, 1998, P.P. 858859, США (копия прилагается). Данный способ не обеспечивает резкости гетерограниц из-за термической неустойчивости GaAs при температуре 690°С. Кроме того, при высоком уровне легирования при данной температуре вследствие поверхностной сегрегации атомов Si не обеспечивается однородность легирования квантовых ям. Это приводит к падению спектральной чувствительности фотодетектора и увеличению темнового тока. A known method of growing a heterostructure for an infrared detector, including a substrate and overlying semiconductor layers - contact and layers that form an active region containing 50 GaAs quantum wells and AlGaAs quantum barriers. Quantum wells are doped with Si with a doping level of 3.3 - 10 18 cm "3. The substrate temperature is maintained at 690 ° C, see D. K. Sengupta et al. Growth and Characterization of n-Type GaAs / AlGaAs Quantum Well Infrared Photodetector on GaAs -on- Si Substrate, Journal of Electronic Materials, Vol. 27, No. 7, 1998, PP 858859, USA (copy attached) This method does not provide sharpening of the heterointerfaces due to the thermal instability of GaAs at a temperature of 690 ° C. In addition , at a high level of doping at a given temperature due to surface segregation of Si atoms, homogeneity of doping of quantum wells is not ensured. the spectral sensitivity of the photodetector and an increase in dark current.
Известен способ выращивания гетероструктуры для инфракрасного фотодетектора, включающей подложку и вышележащие полупроводниковые слои, образующие активную область, содержащую множество легированных кремнием квантовых ям, а также - множество квантовых барьеров. Способ осуществляют методом МПЭ путем нагрева подложки в вакууме при t° 580° С, в квантовые ямы подают реагенты Ga и As, а в квантовые барьеры -А1, Ga и As. Уровень легирования квантовых ям Si: 1 х 10 1 8 см" 3 , см. К. L. Tsai и др., Influence of oxygen on the performance of GaAs/AlGaAs quantum wellinfrared photodetectors, Journal of Applied Physics 76 (1), 1 July 1994, P. P. 274-277 (копия прилагается). A known method of growing a heterostructure for an infrared photodetector, including a substrate and overlying semiconductor layers forming an active region containing many silicon doped quantum wells, as well as many quantum barriers. The method is carried out by the MPE method by heating the substrate in vacuum at t ° 580 ° C, reagents Ga and As are fed into the quantum wells, and A1, Ga and As are sent to the quantum barriers. Si quantum well doping level: 1 x 10 1 8 cm " 3, see K. L. Tsai et al., Influence of oxygen on the performance of GaAs / AlGaAs quantum wellinfrared photodetectors, Journal of Applied Physics 76 (1), 1 July 1994, PP 274-277 (copy attached).
Данное техническое решение принято в качестве прототипа настоящего изобретения. В данном способе температура процесса снижена по сравнению с вышеописанным аналогом, что предотвращает термическую неустойчивость GaAs и обеспечивает определенную резкость гетерограниц, однако низкая температура процесса обусловливает повышенное количество кристаллических дефектов (дислокаций и глубоких примесей, например кислорода), являющихся центрами рекомбинации (DX - центрами), снижающими эффективность поглощения в квантовых ямах и, соответственно, чувствительность и обнаружительную способность инфракрасного детектора. This technical solution is made as a prototype of the present invention. In this method, the process temperature is reduced in comparison with the analogue described above, which prevents the thermal instability of GaAs and provides a certain sharpness of heteroboundaries, however, the low temperature of the process causes an increased number of crystalline defects (dislocations and deep impurities, such as oxygen), which are recombination centers (DX centers) that reduce the absorption efficiency in quantum wells and, accordingly, the sensitivity and detectability of an infrared detector.
Раскрытие изобретения Disclosure of invention
Задачей настоящего изобретения является снижение количества кристаллических дефектов и повышение тем самым чувствительности (отношение сигнал/шум) и обнаружительной способности (минимальное значение детектируемого сигнала фотодетектора). The objective of the present invention is to reduce the number of crystalline defects and thereby increase the sensitivity (signal-to-noise ratio) and detection ability (minimum value of the detected photodetector signal).
Согласно изобретению в способе выращивания гетероструктуры для инфракрасного фотодетектора, включающей подложку и вышележащие полупроводниковые слои - контактные и слои, образующие активную область, содержащую множество квантовых ям и барьеров, методом молекулярно-пучковой эпитаксии путем нагрева подложки в вакууме и попеременной подачи потоков реагентов в квантовые ямы и барьеры, а также легирующей примеси - Si в квантовые ямы, причем в квантовые ямы подают реагенты: Ga и As, а в квантовые барьеры - А1, Ga и As, в квантовые ямы дополнительно подают А1 в количестве, обеспечивающем его мольную долю в квантовой яме 0,02 - 0, 1 0 , при этом в процессе выращивания слоев, образующих активную область, температуру подложки поддерживают в пределах 700 - 750°С, а уровень легирования квантовых ям поддерживают в пределах (2 - 5) х 10 1 7 см" 3. According to the invention, in a method for growing a heterostructure for an infrared photodetector comprising a substrate and overlying semiconductor layers — contact and layers forming an active region containing a plurality of quantum wells and barriers by the molecular beam method epitaxy by heating the substrate in a vacuum and alternately supplying reagent fluxes to quantum wells and barriers, as well as doping impurities - Si into quantum wells, whereby reagents: Ga and As are fed into quantum wells, and A1, Ga and As, into quantum barriers, quantum wells additionally supply A1 in an amount ensuring its molar fraction in the quantum well of 0.02-0.1 0, while in the process of growing the layers forming the active region, the substrate temperature is maintained within 700 - 750 ° C, and the level of doping of quantum pits are supported within (2 - 5) x 10 1 7 cm " 3.
Заявителем не выявлены источники, содержащие информацию о технических решениях, идентичных настоящему изобретению, что позволяет сделать вывод о его соответствии критерию «Новизна» («N»). The applicant has not identified sources containing information about technical solutions identical to the present invention, which allows us to conclude that it meets the criterion of "Novelty" ("N").
Реализация отличительных признаков изобретения обусловливает важное новое свойство заявленного способа: обеспечение резкости гетерограниц наряду с уменьшением количества кристаллических дефектов. Подача в квантовые ямы А1 в количестве, обеспечивающем его мольную долю в квантовой яме в пределах 0,02 - 0,10, повышает термическую устойчивость материала квантовой ямы и предотвращает снижение резкости гетерограниц даже при достаточно высоких (700 - 750°С) температурах, при которых количество кристаллических дефектов значительно снижается. Нижний предел - 700°С обусловлен тем, что при температурах выше 700°С адсорбция примесей (атомов кислорода) пренебрежимо мала, повышение температуры процесса выше 750°С не рационально, так как не дает дополнительного эффекта. При этом поверхностная сегрегация атомов Si понижена за счет снижения уровня легирования до (2 - 5) 1 7 3 The implementation of the distinguishing features of the invention leads to an important new property of the claimed method: ensuring the sharpness of heterointerfaces along with a decrease in the number of crystalline defects. Submission to A1 quantum wells in an amount that ensures its molar fraction in the quantum well in the range of 0.02-0.10 increases the thermal stability of the quantum well material and prevents a decrease in the sharpness of the heteroboundary even at sufficiently high (700 - 750 ° C) temperatures, which the number of crystalline defects is significantly reduced. The lower limit - 700 ° C is due to the fact that at temperatures above 700 ° C the adsorption of impurities (oxygen atoms) is negligible, an increase in the process temperature above 750 ° C is not rational, as it does not give an additional effect. In this case, the surface segregation of Si atoms is reduced due to a decrease in the doping level to (2 - 5) 1 7 3
χ 10 см" (практически, на порядок ниже в сравнении с прототипом), что уменьшает неоднородность концентрации примесей. χ 10 cm " (almost an order of magnitude lower in comparison with the prototype), which reduces the heterogeneity of the concentration of impurities.
Снижение уровня легирования до указанных выше значений стало возможным благодаря тому, что при повышенной до 700- 750°С температуре процесса количество дефектов уменьшается и, соответственно, увеличивается чувствительность активной области гетероструктуры, что компенсирует снижение чувствительности, связанное с уровнем легирования. A decrease in the doping level to the above values became possible due to the fact that at a process temperature increased to 700–750 ° C, the number of defects decreases and, accordingly, the sensitivity of the active region of the heterostructure increases, which compensates for the decrease in sensitivity associated with the doping level.
Указанные новые свойства изобретения обусловливают, по мнению заявителя, соответствие изобретения критерию «Изобретательский уровень» («IS»). These new features of the invention determine, according to the applicant, the invention meets the criterion of "Inventive step" ("IS").
Краткое описание чертежей Brief Description of the Drawings
В дальнейшем изобретение поясняется подробным описанием примеров его осуществления со ссылкой на чертеж, на котором приведена схема установки для МПЭ. The invention is further explained in the detailed description of examples of its implementation with reference to the drawing, which shows the installation diagram for the MPE.
Лучший вариант осуществления изобретения The best embodiment of the invention
В вакуумной камере 1 размещают кристаллическую подложку 2 для выращивания гетероструктуры. Для поддержания высокого вакуума в ходе процесса используют криопанели 3 с жидким азотом. Маневрирование подложкой 2 и ее нагрев осуществляют при помощи манипулятора 4. Исходные реагенты в виде атомарных пучков металлов III группы (А1, Ga) и легирующей примеси (Si) подают на подложку 2 из испарителей 5, а подача мышьяка (As) осуществляется через источник с крекером 6. In the vacuum chamber 1 is placed a crystalline substrate 2 for growing a heterostructure. To maintain a high vacuum during the process, cryopanels 3 with liquid nitrogen are used. Maneuvering the substrate 2 and its heating carried out using a manipulator 4. The initial reagents in the form of atomic beams of group III metals (A1, Ga) and dopants (Si) are fed to the substrate 2 from evaporators 5, and arsenic (As) is supplied through a source with cracker 6.
Сначала подложку 2 нагревают до температуры 580-600°С для удаления собственного окисла путем его термического разложения. Затем на нагретую поверхность подложки 2 одновременно подают потоки As из источника 6 и атомов Ga и Si из испарителей 5 для выращивания нижнего контактного слоя заданной толщины и концентрации носителей. Затем, за короткий промежуток времени, одновременно повышают температуру подложки до значений в диапазоне 700-750°С, перекрывают поток атомов Si и на подложку подают атомарный поток А1 для выращивания первого барьерного слоя. По достижении заданной толщины барьерного слоя переключают потоки атомов А1 так, чтобы мольная доля алюминия находилась в диапазоне 0,02-0, 10, и открывают поток атомов Si, обеспечивающий уровень легирования (2-5) х 10 см" квантовой ямы. В этом режиме проводят выращивание заданной толщины квантовой ямы, после чего проводят обратное переключение к режиму выращивания барьерного слоя. Цикл выращивания пары «квантовая яма/барьер» повторяют заданное число раз, после чего перекрывают поток атомов А1 и проводят выращивание верхнего контактного слоя GaAs. First, the substrate 2 is heated to a temperature of 580-600 ° C to remove its own oxide by thermal decomposition. Then, flows of As from the source 6 and Ga and Si atoms from the evaporators 5 are simultaneously fed onto the heated surface of the substrate 2 to grow the lower contact layer of a given thickness and carrier concentration. Then, in a short period of time, the temperature of the substrate is simultaneously increased to values in the range of 700-750 ° C, the flow of Si atoms is blocked, and the atomic stream A1 is fed onto the substrate to grow the first barrier layer. Upon reaching the specified thickness of the barrier layer, the atomic fluxes A1 are switched so that the molar fraction of aluminum is in the range of 0.02-0, 10, and the flux of Si atoms is opened, providing a doping level of (2-5) x 10 cm " quantum well. In this In this mode, the growth of the given thickness of the quantum well is carried out, after which the switching back to the growth mode of the barrier layer is carried out.The cycle of growing the quantum well / barrier pair is repeated a predetermined number of times, after which the flow of A1 atoms is blocked and the upper GaAs contact layer is grown.
Таким образом, выращенная согласно заявленному способу гетероструктура для инфракрасного фотодетектора имеет значительно меньшую концентрацию глубоких центров рекомбинации в барьерных слоях и, при обеспечении резкости гетерограниц, соответственно, обладает высокой эффективностью преобразования падающего излучения. Thus, the heterostructure grown for the infrared photodetector according to the claimed method has a significantly lower concentration of deep centers recombination in the barrier layers and, while ensuring the sharpness of the heteroboundaries, respectively, has a high conversion efficiency of the incident radiation.
Промышленная применимость Industrial applicability
Реализация способа осуществляется с помощью известных оборудования и материалов. По мнению заявителя, изобретение соответствует критерию «Промышленная применимость» («IA»). The implementation of the method is carried out using known equipment and materials. According to the applicant, the invention meets the criterion of "Industrial Applicability" ("IA").
Claims
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201280047193.5A CN103959441B (en) | 2011-07-28 | 2012-07-27 | Growth is for the method for the heterojunction structure of infrared light detector |
| IL230699A IL230699A (en) | 2011-07-28 | 2014-01-28 | Method for growing a heterostructure for an infrared photodetector |
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| Application Number | Priority Date | Filing Date | Title |
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| RU2011131881 | 2011-07-28 | ||
| RU2011131881/28A RU2469432C1 (en) | 2011-07-28 | 2011-07-28 | Method to grow heterostructure for infrared photodetector |
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| WO2013015722A1 true WO2013015722A1 (en) | 2013-01-31 |
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| PCT/RU2012/000621 Ceased WO2013015722A1 (en) | 2011-07-28 | 2012-07-27 | Method for growing a heterostructure for an infrared photodetector |
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| CN (1) | CN103959441B (en) |
| IL (1) | IL230699A (en) |
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| WO (1) | WO2013015722A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2065644C1 (en) * | 1994-06-14 | 1996-08-20 | Институт физики полупроводников СО РАН | Method of manufacture of photodetector cell based on multilayer heterostructures ga as/al ga as |
| RU2089656C1 (en) * | 1993-12-23 | 1997-09-10 | Ольга Викторовна Гончарова | Method of production of photosensitive resistive and optically nonlinear thin-filmed heterostructures based on semiconductor and dielectric materials |
| US6559471B2 (en) * | 2000-12-08 | 2003-05-06 | Motorola, Inc. | Quantum well infrared photodetector and method for fabricating same |
| US7399988B2 (en) * | 2006-05-10 | 2008-07-15 | Fujitsu Limited | Photodetecting device and method of manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5995260A (en) * | 1997-05-08 | 1999-11-30 | Ericsson Inc. | Sound transducer and method having light detector for detecting displacement of transducer diaphragm |
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2011
- 2011-07-28 RU RU2011131881/28A patent/RU2469432C1/en active
-
2012
- 2012-07-27 WO PCT/RU2012/000621 patent/WO2013015722A1/en not_active Ceased
- 2012-07-27 CN CN201280047193.5A patent/CN103959441B/en not_active Expired - Fee Related
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2089656C1 (en) * | 1993-12-23 | 1997-09-10 | Ольга Викторовна Гончарова | Method of production of photosensitive resistive and optically nonlinear thin-filmed heterostructures based on semiconductor and dielectric materials |
| RU2065644C1 (en) * | 1994-06-14 | 1996-08-20 | Институт физики полупроводников СО РАН | Method of manufacture of photodetector cell based on multilayer heterostructures ga as/al ga as |
| US6559471B2 (en) * | 2000-12-08 | 2003-05-06 | Motorola, Inc. | Quantum well infrared photodetector and method for fabricating same |
| US7399988B2 (en) * | 2006-05-10 | 2008-07-15 | Fujitsu Limited | Photodetecting device and method of manufacturing the same |
Non-Patent Citations (2)
| Title |
|---|
| D. K. SENGUPTA ET AL.: "Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si Substrate", JOURNAL OF ELECTRONIC MATERIALS, vol. 27, no. 7, 1998, pages 858 - 859 * |
| K. L. TSAI ET AL.: "Influence of oxygen on the performance of GaAs/AlGaAs quantum well infrared photodetectors", J. APPL. PHYS., vol. 76, no. 1, 1 July 1994 (1994-07-01), pages 274 - 277 * |
Also Published As
| Publication number | Publication date |
|---|---|
| IL230699A0 (en) | 2014-03-31 |
| IL230699A (en) | 2017-09-28 |
| CN103959441A (en) | 2014-07-30 |
| CN103959441B (en) | 2016-10-05 |
| RU2469432C1 (en) | 2012-12-10 |
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