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WO2013009000A2 - Dispositif pour la fabrication de led - Google Patents

Dispositif pour la fabrication de led Download PDF

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Publication number
WO2013009000A2
WO2013009000A2 PCT/KR2012/003874 KR2012003874W WO2013009000A2 WO 2013009000 A2 WO2013009000 A2 WO 2013009000A2 KR 2012003874 W KR2012003874 W KR 2012003874W WO 2013009000 A2 WO2013009000 A2 WO 2013009000A2
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WO
WIPO (PCT)
Prior art keywords
chamber
electrode
high frequency
plate
boat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/003874
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English (en)
Korean (ko)
Other versions
WO2013009000A3 (fr
Inventor
송기훈
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Individual
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Individual
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Publication date
Application filed by Individual filed Critical Individual
Publication of WO2013009000A2 publication Critical patent/WO2013009000A2/fr
Publication of WO2013009000A3 publication Critical patent/WO2013009000A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H10P72/0434—
    • H10P72/12—

Definitions

  • the present invention relates to a MOCVD (Metal Organic Chemical Vapor Deposition) equipment used to manufacture LEDs, and more particularly to an LED manufacturing apparatus that can significantly increase the production of LEDs.
  • MOCVD Metal Organic Chemical Vapor Deposition
  • a light emitting diode called an LED (Light Emitting Diode) is a process of stacking a semiconductor layer using a compound material such as GaAs, AlGaAs, GaN, InGaN, and AlGaInP on a substrate such as Si, GaAS, or sapphire. It will be manufactured through.
  • a compound material such as GaAs, AlGaAs, GaN, InGaN, and AlGaInP
  • FIG. 5 is a schematic view showing an LED manufacturing apparatus currently being used.
  • a shower head 102 for discharging a reaction gas into the chamber 101 is installed above the chamber 101, and a susceptor 104 on which a wafer is placed below the shower head 102. ) Is installed.
  • the shower head 102 is coupled with one or more inlet tubes 103 for introducing a reaction gas, a source, and the like, and a plurality of wafer holders 104a for stably disposing a substrate on the upper side of the susceptor 104. do.
  • a heater for heating the wafer is built in the susceptor 104.
  • the inner wall of the chamber 101 is provided with a structure 106 to block the influence of the external temperature, the discharge pipe for discharging the reaction gas in the chamber 101 to the outside on one side of the chamber 101 105 is combined.
  • a driving means 107 for rotationally driving the susceptor 104 is coupled to the lower portion of the susceptor 104.
  • the shower head 102 is operated while appropriately maintaining the reaction temperature inside the chamber 101 by driving a heater. Through the continuous supply of the reaction gas through the desired semiconductor layer is sequentially deposited on the wafer.
  • a plurality of semiconductor layers such as an N-type layer, a P-type layer, and an active layer are formed on a wafer, and the semiconductor layer is deposited by, for example, metal organic chemical vapor deposition (MOCVD).
  • MOCVD metal organic chemical vapor deposition
  • the number of times the LED can be manufactured using one LED manufacturing apparatus is limited to approximately 2 to 2.5 times per day.
  • the LED manufacturing apparatus shown in FIG. 5 arranges the wafer on the upper side of the susceptor 104.
  • the susceptor 104 is disposed at one time.
  • the number of wafers allowed is limited to approximately 15 sheets for 4 inch wafers and approximately 6 sheets for 6 inch wafers.
  • the conventional LED manufacturing apparatus described above is limited to about 30 to 45 sheets based on 4 inch wafers and about 12 to 18 sheets based on 6 inch wafers.
  • the LED manufacturing apparatus is shown in Figure 6, the chamber ( 201, a reaction gas supply means 202 for supplying a reaction gas or a source into the chamber 201, a gas discharge means 203 for discharging the gas inside the chamber 201 to the outside, and the chamber High frequency induction coil 204 or dielectric electrode provided on the outside of 201, boat 205 installed on the inner central portion of chamber 201, and drive means 206 for rotationally driving the boat 205.
  • the boat 205 has a multi-layer structure of a plate 208, each of which is provided with at least one wafer holder 207, the plate 208 is made of a conductive material, the high frequency Induction coil 204 The frequency current is supplied.
  • the "LED manufacturing apparatus" of "10-0983730" having such a structure can significantly increase the number of LEDs that can be produced within a unit time and can significantly lower the manufacturing cost of the LEDs.
  • the "LED manufacturing apparatus" of "10-0983730” has a problem that the thickness of the semiconductor layer deposited on the wafer cannot be equal because the high frequency induction coil or the electrode is located outside the chamber, so that the plate temperatures cannot be equalized. .
  • an object of the present invention is to provide an LED manufacturing apparatus capable of mass-producing LEDs while having a simple structure in order to solve the problems described above.
  • another object of the present invention is to provide an LED manufacturing apparatus capable of uniformizing the thickness of a semiconductor layer deposited on a wafer by heating a plurality of stacked plates to the same temperature.
  • the LED manufacturing apparatus for achieving the above object is a chamber (Chamber), the boat is disposed in the inner center of the chamber and the wafer is seated, for rotating the boat clockwise or counterclockwise Drive means, reaction member supply means for supplying a reaction gas or source into the chamber, and gas discharge means for discharging the gas flowing in the chamber to the outside of the chamber.
  • a chamber Chamber
  • the boat is disposed in the inner center of the chamber and the wafer is seated, for rotating the boat clockwise or counterclockwise Drive means
  • reaction member supply means for supplying a reaction gas or source into the chamber
  • gas discharge means for discharging the gas flowing in the chamber to the outside of the chamber.
  • the boat is loaded with a predetermined height interval between the two or more plates equipped with a wafer holder for seating the wafer on the top surface, and the straight up in the height direction of the boat to fix a plurality of plates and high frequency current Two or more struts to supply, the base plate which is fixed to the struts while laying a predetermined height gap under the plate located at the bottom, the drive means is the upper end of the motor shaft penetrates the lower surface of the chamber, It is preferable that the drive motor is fixed to the center of the bottom surface of the base plate.
  • the plate may be composed of an outer plate made of a ceramic material and a top plate overlapping the upper surface of the outer plate and having a wafer holder made of silicon carbide (SiC) or tungsten and recessed in the upper surface.
  • the inner side of the outer plate is inserted into a circular high frequency heating heater wound in the form of a coil.
  • a post-shaped electrode for introducing a high frequency current is fixed to the side surface of the plate.
  • a first brush and a second brush which are in contact with the first electrode and the second electrode, protrude from the bottom surface of the base plate facing the first electrode and the second electrode.
  • the first support and the second support contact and connect the high frequency current transmitted from the first and second brushes with a circular high frequency heating heater wound in the shape of a coil through the first support and the second support.
  • a circular high frequency heating heater fixed between the base plate and the bottom of the chamber and fixed to the bottom of the chamber and in contact with the first and second brushes while the center is penetrated by the motor shaft is wound in the shape of a coil through the first and second brushes.
  • An electrode separator for supplying a high frequency current is mounted.
  • a first electrode made of a circular shape on a top surface of the electrode separator and supplied with a high frequency current and contacting a first brush, and a circular shape larger or smaller than a rotation radius of the first electrode, may be formed.
  • a second electrode is provided which is not in contact with the electrode and is supplied with a high frequency current and in contact with the second brush.
  • a wafer and a plate are mounted on a wafer holder, and then a predetermined amount of reactant gas flows inside the chamber, the driving means is activated, and a high frequency current is supplied to the electrode separator. And the boat including the base plate is rotated, the circular high frequency heating heater wound in the form of a coil receiving a high frequency current from the electrode separator to heat the plate.
  • the heated plate heats the wafer and the reaction gas flowing in the chamber is deposited on the wafer to form a semiconductor layer having a predetermined thickness.
  • the LED manufacturing apparatus can supply the same high frequency current to the circular high frequency heating heaters wound in a spiral shape separately installed on each plate, so that each plate can be heated to the same temperature.
  • the deposition thickness of the semiconductor layer may be precisely controlled by appropriately controlling the amount of current supplied to the circular high frequency heating heater and the amount of reaction gas supplied through the first duct.
  • the semiconductor layer can be formed on a large number of wafers by increasing the number of plates, the number of LEDs that can be produced within a unit time can be greatly increased, and the manufacturing cost of the LEDs can be significantly reduced.
  • Figure 3 is a plan view of the strut provided in the present invention, a diagram for explaining the process of the high frequency current is transmitted to the circular high frequency heating heater wound in the form of a coil through the first strut and the second strut,
  • FIG. 4 is a view for explaining a first electrode and a second electrode provided in the electrode separator
  • Figure 6 is a view for explaining the "LED manufacturing apparatus" of the "10-0983730" filed and registered by the inventor.
  • the LED manufacturing apparatus as shown in Figure 1, the chamber (1) (Chamber), the boat (5) on which the wafer 3 is seated while being disposed in the inner center of the chamber (1), the boat A drive means 7 for rotating the clockwise or counterclockwise direction, a reaction member supply means for supplying a reaction gas or a source into the chamber 1, and a gas flowing in the chamber 1; It is provided with a gas discharge means for discharging to the outside of the chamber (1).
  • the boat 5 is loaded with two or more plates 17 equipped with a wafer holder 15 for seating the wafer 3 on the upper surface while being stacked with a predetermined height interval therebetween, and the boat 5 Two or more struts 19 which stand upright in the height direction to fix the plurality of plates 17 and supply a high frequency current, and are fixed to the struts 19 while being laid at predetermined height intervals under the plate 17 positioned at the bottom thereof.
  • the drive means 7 is a drive in which the upper end of the motor shaft 23 passes through the lower surface of the chamber 1, and is fixed to the center of the bottom surface of the base plate 21
  • a bearing 26 may be installed on the lower surface of the chamber 1 in contact with the motor shaft 23 so that the motor shaft 23 may be smoothly rotated.
  • the plate 17 is made of a silicon carbide (SiC) or tungsten material while overlapping the upper surface of the outer plate 31 made of a ceramic material and the outer plate 31, as shown in Figure 2
  • a top plate 33 having a wafer holder 15 recessed in an upper surface thereof may be formed, and a circular high frequency heating heater 35 wound in a shape of a coil is inserted into the outer plate 31.
  • a post 19 is mounted on the side of the plate 17 to which a high frequency current is supplied.
  • a first brush 28a and a second contacting the first electrode 38 and the second electrode 40 are formed on the bottom surface of the base plate 21 facing the first electrode 38 and the second electrode 40.
  • the brush 28b protrudes.
  • first support 19a and the second support 19b have high frequency currents transmitted from the first and second brushes 28a and 28b as shown in FIGS. 1 and 3. And a circular high frequency heating heater 35 wound in a spiral form via the second support 19b.
  • the support 19 may be made of aluminum material having a low absorption coefficient of the high frequency current.
  • Electrode separator 36 (Seperator) for contacting the first and second brushes 28a and 28b and supplying a high frequency current to the circular high frequency heating heater 35 wound in a spiral form through the first and second brushes 28a and 28b. ) Is mounted.
  • the high frequency current supplied to the circular high frequency heating heater 35 wound in the shape of a coil is preferably produced by an RF generator.
  • the first electrode 38 is formed in a circular shape, a high frequency current is supplied and abuts with the first brush 28a, and A second electrode 40 which is formed in a circle shape larger or smaller than the rotation radius of the first electrode 38 and is not in contact with the first electrode 38 but is supplied with a high frequency current and contacts the second brush 28b is installed. .
  • the chamber 1 is made of an aluminum material and made of a cylindrical shape, it is preferably cooled by the cooling water.
  • the reaction member supply means is a hollow three-dimensional shape is attached to the inner wall of the chamber (1) and the inlet pores 27 is provided on one side facing the boat (5) 1 duct 37 and the inlet pipe 39 which passes through the chamber 1 outside the chamber 1 and then communicates with the first duct 37 to introduce the reaction gas into the first duct 37. It includes more.
  • the inlet pores 27 preferably pass through one side surface of the first duct 37 located on the same height line as each plate 17.
  • the gas discharge means is a three-dimensional shape with an empty inside, the second duct 41 is attached to the inner wall of the chamber 1 and the discharge pores 29 are provided on one side facing the boat 5, and the chamber (1)
  • the reaction gas which penetrates the chamber 1 from the outside and then communicates with the second duct 41 and is filled inside the chamber 1 through the second duct 41 and the discharge pores 29, is provided with the chamber 1.
  • Discharge pipe 43 for discharging to the outside the gas installed in the discharge pipe 43 is filled in the chamber (1) through the discharge pores 29, the second duct 41 and the discharge pipe 43 outside the chamber (1) Installed in the vacuum pump 45 and the discharge pipe 43 to block or open a passage of the discharge pipe 43 so that the gas filled in the chamber 1 is not discharged or discharged out of the chamber 1. It consists of a valve 47.
  • the discharge pores 29 preferably pass through one side of the second duct 41 located on the same height line as each plate 17.
  • the present invention according to the process sequence by opening the valve 46 installed in the inlet pipe (39) for a predetermined time to introduce a reaction gas or source into the chamber (1), and then wound in a round shape high frequency heating heater (35)
  • the plate 17 is heated for a predetermined time by supplying a high-frequency current to the inside, the valve 47 installed in the discharge pipe 43 is opened for a predetermined time, and the vacuum pump 45 is operated to operate inside the chamber 1.
  • the control unit opens the valve 46 closing the inlet pipe 39 for a predetermined time to supply a predetermined amount of reactive gas or source to the inlet pipe 39 and the first duct 37. ), And it is injected into the chamber 1 via the inlet pores 27.
  • control unit is operated by the drive motor 25, the plate 17, the support 19, the first and second brushes (28a, 28b), which is provided with a circular high frequency heating heater (35) wound in a spiral shape, and
  • the boat 5 including the base plate 21 is rotated in a clockwise or counterclockwise direction, and the rotation operation is for preventing the deposition of the reaction gas in any direction on the wafer 3.
  • control unit supplies a high frequency current to the first electrode 38 and the second electrode 40 provided in the electrode separator 36.
  • the first electrode 38 and the second electrode 40 are provided.
  • the first and second brushes 28a and 28b which are in contact with each other, rotate by the drive motor 25 and at the same time receive the high frequency current transmitted from the first electrode 38 and the second electrode 40 from the first post 19a. Through the contact of the second support (19b) it is transmitted to the circular high frequency heating heater (35) wound in the form of a spiral.
  • the circular high frequency heating heater 35 wound in a spiral shape receiving a high frequency current may heat the plate 17 of silicon carbide (SiC) or metal material 33 to be subjected to high frequency heating, and thus the wafer seated on the wafer holder 15 ( 3) sweetened.
  • control unit that has completed the process opens the valve 47 installed in the discharge pipe 43 to discharge the gas filled in the chamber 1 to the outside of the chamber 1, and drives the vacuum pump 45, The task is completed after a certain time.
  • the wafer 3 is mounted on the wafer holder 15, and then a certain amount of reactive gas is filled into the chamber 1, and the driving means 7 is operated.
  • the boat 5 including the support 19, the plate 17, and the base plate 21 is rotated, and the circular high frequency heating heater 35 wound in the shape of a coil is The plate 17 is heated by receiving a high frequency current from the electrode separator 36.
  • the heated plate 17 heats the wafer 3 and the reaction gas filled in the chamber 1 is deposited on the wafer 3 to form a semiconductor layer having a predetermined thickness.
  • the LED manufacturing apparatus supplies the same high frequency current to the circular high frequency heating heater 35 wound in a spiral shape, so that each play can be heated to the same temperature.
  • the semiconductor layer can be formed on a large number of wafers 3 through the method of increasing the number of the plates 17, the number of LEDs that can be produced within a unit time can be greatly increased, and the manufacturing cost of the LEDs can be increased. Can be significantly lowered.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention se rapporte à un appareil adapté pour réaliser un dépôt chimique en phase vapeur d'un métal organique (MOCVD, Metal Organic Chemical Vapor Deposition). Le procédé de dépôt chimique en phase vapeur d'un métal organique est utilisé dans la fabrication de LED. L'appareil selon l'invention comprend : une chambre ; une nacelle, qui est placée au centre de l'intérieur de la chambre et sur laquelle repose une tranche ; des moyens d'entraînement, qui sont utilisés pour faire tourner la nacelle dans le sens des aiguilles d'une montre ou dans le sens inverse des aiguilles d'une montre ; des moyens de fourniture d'un élément de réaction, qui sont utilisés pour faire entrer un gaz ou une source de réaction dans la chambre ; et des moyens d'évacuation de gaz, qui sont utilisés pour amener le gaz, qui circule à l'intérieur de la chambre, à s'évacuer hors de la chambre. La nacelle de l'appareil selon l'invention peut comprendre : au moins deux plaques, qui sont placées l'une en dessus de l'autre avec un intervalle d'une hauteur prédéterminée entre elles, et qui comportent des supports de tranche adaptés pour permettre à des tranches de reposer sur les surfaces supérieures des supports de tranche ; au moins deux accessoires, qui sont placés à la verticale, dans le sens de la hauteur de la nacelle, et qui sont adaptés pour maintenir la pluralité de plaques de façon sûre et pour fournir un courant à haute fréquence ; et une plaque de base qui est fixée de façon sûre aux accessoires et qui fait la liaison avec la plaque la plus basse, avec un intervalle d'une hauteur prédéterminée entre elles. De préférence, les moyens d'entraînement comprennent un moteur d'entraînement caractérisé en ce que l'extrémité supérieure de l'arbre du moteur passe au travers de la surface inférieure de la chambre avant de venir se fixer de façon sûre au centre de la surface inférieure de la plaque de base. Les plaques de la nacelle de l'appareil selon l'invention peuvent comprendre : une plaque extérieure faite en un matériau céramique ; une plaque de surface supérieure, qui repose sur la surface supérieure de la plaque extérieure, et qui est faite en un matériau tel que du carbure de silicium (SiC) ou du tungstène, et qui comporte un support de tranche dont la surface supérieure est immergée sous une forme concave ; et un élément chauffant de forme circulaire, qui est enroulé en forme de bobine et qui est utilisé pour assurer un chauffage à haute fréquence, est inséré dans la plaque extérieure. Un premier balai et un second balai, qui touchent une première électrode et une seconde électrode, se projettent à partir de la surface inférieure de la plaque de base qui est orientée vers la première électrode et la seconde électrode. Par ailleurs, le premier accessoire et le second accessoire transmettent un courant à haute fréquence, qui a été transmis par les premier et second balais, via le premier accessoire et le second accessoire, à l'élément chauffant de forme circulaire, qui est enroulé en forme de bobine et qui est utilisé pour assurer un chauffage à haute fréquence. D'autre part encore, un séparateur d'électrodes est placé entre la plaque de base et la surface inférieure de la chambre. Ledit séparateur d'électrodes est fixé de façon sûre à la surface inférieure de la chambre et est pénétré en son centre par l'arbre du moteur. Dans cet état, il touche les premier et second balais et il délivre un courant à haute fréquence via les premier et second balais à l'élément chauffant de forme circulaire qui est utilisé pour assurer un chauffage à haute fréquence. Enfin, les éléments suivants sont placés sur la surface supérieure du séparateur d'électrodes : une première électrode, qui est réalisée sous une forme ronde, qui délivre un courant à haute fréquence et qui touche le premier balai ; et une seconde électrode, qui est réalisée sous une forme ronde, qui est plus grande ou plus petite que le rayon de rotation de la première électrode et qui, sans faire contact avec la première électrode, délivre un courant à haute fréquence et touche le second balai.
PCT/KR2012/003874 2011-07-08 2012-05-17 Dispositif pour la fabrication de led Ceased WO2013009000A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110067621A KR101055064B1 (ko) 2011-07-08 2011-07-08 엘이디 제조 장치
KR10-2011-0067621 2011-07-08

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WO2013009000A2 true WO2013009000A2 (fr) 2013-01-17
WO2013009000A3 WO2013009000A3 (fr) 2013-03-14

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WO2017220268A1 (fr) * 2016-06-20 2017-12-28 Heraeus Noblelight Gmbh Dispositif pour le traitement thermique d'un substrat ainsi que plateau support et élément de support de substrat associés
CN114908337A (zh) * 2022-05-27 2022-08-16 北京北方华创微电子装备有限公司 半导体工艺设备
CN114959650A (zh) * 2022-05-18 2022-08-30 江苏微导纳米科技股份有限公司 一种半导体装置

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KR101573525B1 (ko) 2014-04-30 2015-12-02 (주)피앤테크 유기금속 화학기상 증착장치의 진공 가이드
KR101877403B1 (ko) * 2016-01-12 2018-07-13 에이피시스템 주식회사 기판 처리 장치 및 방법
WO2022116339A1 (fr) * 2020-12-03 2022-06-09 无锡邑文电子科技有限公司 Dispositif de traitement ald et procédé de traitement
KR20240042070A (ko) * 2021-08-10 2024-04-01 카티바, 인크. 기판 위치 설정 기능을 구비한 기판 준비 챔버

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WO2017220268A1 (fr) * 2016-06-20 2017-12-28 Heraeus Noblelight Gmbh Dispositif pour le traitement thermique d'un substrat ainsi que plateau support et élément de support de substrat associés
RU2664559C1 (ru) * 2016-06-20 2018-08-21 Хераеус Ноубллайт Гмбх Устройство для термической обработки подложки, носитель и элемент для поддержки подложки для этого устройства
TWI655706B (zh) * 2016-06-20 2019-04-01 賀利氏諾伯燈具公司 用於基板熱處理之裝置與用於該裝置之支撐架及基板支撐元件
CN114959650A (zh) * 2022-05-18 2022-08-30 江苏微导纳米科技股份有限公司 一种半导体装置
CN114959650B (zh) * 2022-05-18 2023-10-20 江苏微导纳米科技股份有限公司 一种半导体装置
WO2023221738A1 (fr) * 2022-05-18 2023-11-23 江苏微导纳米科技股份有限公司 Dispositif à semi-conducteur
JP2025511578A (ja) * 2022-05-18 2025-04-16 江蘇微導納米科技股▲ふん▼有限公司 半導体デバイス及び半導体処理方法
CN114908337A (zh) * 2022-05-27 2022-08-16 北京北方华创微电子装备有限公司 半导体工艺设备
CN114908337B (zh) * 2022-05-27 2023-09-08 北京北方华创微电子装备有限公司 半导体工艺设备

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