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WO2013081694A3 - Wafer structure for electronic integrated circuit manufacturing - Google Patents

Wafer structure for electronic integrated circuit manufacturing Download PDF

Info

Publication number
WO2013081694A3
WO2013081694A3 PCT/US2012/052264 US2012052264W WO2013081694A3 WO 2013081694 A3 WO2013081694 A3 WO 2013081694A3 US 2012052264 W US2012052264 W US 2012052264W WO 2013081694 A3 WO2013081694 A3 WO 2013081694A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer structure
wafer
integrated circuit
circuit manufacturing
electronic integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/052264
Other languages
French (fr)
Other versions
WO2013081694A2 (en
Inventor
David B. Kerwin
Joseph M. Benedetto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Frontgrade Colorado Springs LLC
Original Assignee
Aeroflex Colorado Springs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/218,273 external-priority patent/US9378955B2/en
Priority claimed from US13/218,335 external-priority patent/US9312133B2/en
Priority claimed from US13/218,352 external-priority patent/US20130049178A1/en
Priority claimed from US13/218,345 external-priority patent/US20130049175A1/en
Priority claimed from US13/218,308 external-priority patent/US9396947B2/en
Priority claimed from US13/218,292 external-priority patent/US9378956B2/en
Application filed by Aeroflex Colorado Springs Inc filed Critical Aeroflex Colorado Springs Inc
Priority to EP12854047.3A priority Critical patent/EP2748849A4/en
Publication of WO2013081694A2 publication Critical patent/WO2013081694A2/en
Publication of WO2013081694A3 publication Critical patent/WO2013081694A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P10/128—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H10P34/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.
PCT/US2012/052264 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing Ceased WO2013081694A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP12854047.3A EP2748849A4 (en) 2011-08-25 2012-08-24 TRENCH STRUCTURE FOR ELECTRONIC INTEGRATED CIRCUIT

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US13/218,292 2011-08-25
US13/218,273 US9378955B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,352 2011-08-25
US13/218,335 US9312133B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,352 US20130049178A1 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,345 US20130049175A1 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,308 US9396947B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,345 2011-08-25
US13/218,273 2011-08-25
US13/218,308 2011-08-25
US13/218,292 US9378956B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,335 2011-08-25

Publications (2)

Publication Number Publication Date
WO2013081694A2 WO2013081694A2 (en) 2013-06-06
WO2013081694A3 true WO2013081694A3 (en) 2013-10-24

Family

ID=47746901

Family Applications (6)

Application Number Title Priority Date Filing Date
PCT/US2012/052280 Ceased WO2013028976A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052264 Ceased WO2013081694A2 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052269 Ceased WO2013028973A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052299 Ceased WO2013028986A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052302 Ceased WO2013028988A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052293 Ceased WO2013028983A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US2012/052280 Ceased WO2013028976A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing

Family Applications After (4)

Application Number Title Priority Date Filing Date
PCT/US2012/052269 Ceased WO2013028973A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052299 Ceased WO2013028986A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052302 Ceased WO2013028988A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052293 Ceased WO2013028983A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing

Country Status (2)

Country Link
EP (6) EP2748844A4 (en)
WO (6) WO2013028976A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2996152B1 (en) 2014-09-15 2017-03-15 ABB Schweiz AG High frequency power diode and method for manufacturing the same
DE102017002935A1 (en) * 2017-03-24 2018-09-27 3-5 Power Electronics GmbH III-V semiconductor diode

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648288A (en) * 1992-03-20 1997-07-15 Siliconix Incorporated Threshold adjustment in field effect semiconductor devices
US6346460B1 (en) * 1999-03-30 2002-02-12 Seh-America Low cost silicon substrate with impurity gettering and latch up protection and method of manufacture
US20070141794A1 (en) * 2005-10-14 2007-06-21 Silicon Space Technology Corporation Radiation hardened isolation structures and fabrication methods
US20070148422A1 (en) * 2005-12-20 2007-06-28 Hans-Joachim Schulze Semiconductor Wafer Substrate For Power Semiconductor Components And Method For Producing The Same
KR20090106828A (en) * 2008-04-07 2009-10-12 삼성전자주식회사 Wafer bonding method and wafer structure bonded by the method

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US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
DE3435464A1 (en) * 1984-09-27 1986-04-10 Robert Bosch Gmbh, 7000 Stuttgart Rectifier diode
JP2579979B2 (en) * 1987-02-26 1997-02-12 株式会社東芝 Method for manufacturing semiconductor device
JPH07107935B2 (en) * 1988-02-04 1995-11-15 株式会社東芝 Semiconductor device
US5017508A (en) * 1989-06-29 1991-05-21 Ixys Corporation Method of annealing fully-fabricated, radiation damaged semiconductor devices
DE4036222A1 (en) * 1990-11-14 1992-05-21 Bosch Gmbh Robert METHOD FOR THE PRODUCTION OF SEMICONDUCTOR ELEMENTS, IN PARTICULAR DIODES
JPH07263721A (en) * 1994-03-25 1995-10-13 Nippondenso Co Ltd Semiconductor device and manufacturing method thereof
US5541122A (en) * 1995-04-03 1996-07-30 Motorola Inc. Method of fabricating an insulated-gate bipolar transistor
US6054369A (en) * 1997-06-30 2000-04-25 Intersil Corporation Lifetime control for semiconductor devices
US6027956A (en) * 1998-02-05 2000-02-22 Integration Associates, Inc. Process for producing planar dielectrically isolated high speed pin photodiode
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
DE60141096D1 (en) * 2000-04-11 2010-03-11 Boeing Co Processing system with majority decision
US7518218B2 (en) * 2005-03-03 2009-04-14 Aeroflex Colorado Springs, Inc. Total ionizing dose suppression transistor architecture
US7566951B2 (en) * 2006-04-21 2009-07-28 Memc Electronic Materials, Inc. Silicon structures with improved resistance to radiation events
JP5320679B2 (en) * 2007-02-28 2013-10-23 富士電機株式会社 Semiconductor device and manufacturing method thereof
US8791547B2 (en) * 2008-01-21 2014-07-29 Infineon Technologies Ag Avalanche diode having an enhanced defect concentration level and method of making the same
JP2011044717A (en) * 2009-08-20 2011-03-03 Icemos Technology Ltd Direct wafer-bonded through-hole photodiode
US8288798B2 (en) * 2010-02-10 2012-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. Step doping in extensions of III-V family semiconductor devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648288A (en) * 1992-03-20 1997-07-15 Siliconix Incorporated Threshold adjustment in field effect semiconductor devices
US6346460B1 (en) * 1999-03-30 2002-02-12 Seh-America Low cost silicon substrate with impurity gettering and latch up protection and method of manufacture
US20070141794A1 (en) * 2005-10-14 2007-06-21 Silicon Space Technology Corporation Radiation hardened isolation structures and fabrication methods
US20070148422A1 (en) * 2005-12-20 2007-06-28 Hans-Joachim Schulze Semiconductor Wafer Substrate For Power Semiconductor Components And Method For Producing The Same
KR20090106828A (en) * 2008-04-07 2009-10-12 삼성전자주식회사 Wafer bonding method and wafer structure bonded by the method

Also Published As

Publication number Publication date
EP2748845A4 (en) 2015-07-08
EP2748848A4 (en) 2015-06-10
EP2748849A4 (en) 2015-12-16
EP2748849A2 (en) 2014-07-02
WO2013028986A1 (en) 2013-02-28
WO2013028976A1 (en) 2013-02-28
EP2748844A4 (en) 2015-11-04
EP2748847A4 (en) 2016-06-01
EP2748848A1 (en) 2014-07-02
EP2748846A1 (en) 2014-07-02
EP2748845A1 (en) 2014-07-02
WO2013081694A2 (en) 2013-06-06
EP2748844A1 (en) 2014-07-02
WO2013028983A1 (en) 2013-02-28
EP2748847A1 (en) 2014-07-02
EP2748846A4 (en) 2015-11-11
WO2013028988A1 (en) 2013-02-28
WO2013028973A1 (en) 2013-02-28

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