WO2013072250A1 - Organisches licht emittierendes bauelement - Google Patents
Organisches licht emittierendes bauelement Download PDFInfo
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- WO2013072250A1 WO2013072250A1 PCT/EP2012/072233 EP2012072233W WO2013072250A1 WO 2013072250 A1 WO2013072250 A1 WO 2013072250A1 EP 2012072233 W EP2012072233 W EP 2012072233W WO 2013072250 A1 WO2013072250 A1 WO 2013072250A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
Definitions
- Organic light emitting device An organic light emitting device is giving ⁇ .
- OLEDs organic light-emitting diodes
- the remaining light generated in the active region is distributed over different loss channels, such as light guided in the substrate, in a transparent electrode and in organic layers by waveguiding effects, and in surface plasmas that can be generated in a metallic electrode.
- the waveguiding effects are due in particular to the refractive index differences at the interfaces between the individual layers and regions of an OLED.
- OLEDs typically only about a quarter of the light generated in the active region in the environment, so for example air, decoupled, while about 25% of he ⁇ light produced by waveguide in the substrate, about 20% of the light generated by waveguiding in a transparent Electrode and the organic layers and about 30% lost by the generation of surface plasmons in a metallic electrode for the radiation.
- the guided in the loss channels light can not be decoupled from an OLED, in particular without additional technical measures.
- the coupling-out efficiency is limited to about 60-70% of the light conducted in the substrate and that the appearance of the OLED is significantly affected, since a milky, diffuse re ⁇ inflecting surface is generated by the applied layers or films.
- so-called Bragg gratings or photonic crystals with periodic scattering structures with feature sizes in the wavelength range of light are known, as for example in the documents Ziebarth et al. , Adv. Funct. Mat. 14, 451 (2004) and Do et al. , Adv. Mat. 15, 1214 (2003).
- the proportion of the signal generated in the active region of an OLED light which is converted into plasmons not affected or even decoupled ⁇ the.
- At least one object of certain embodiments is to provide an organic light emitting device having improved efficiency and light extraction.
- an organic light emitting device on a substrate a trans- lucent electrode and a reflective electrode, Zvi ⁇ rule where an organic functional layer stack is arranged.
- translucent is here and a layer be ⁇ stands below, which is transparent to visible light.
- the translucent layer can be transparent, that is clear from ⁇ translucent, or at least partially light scattering and / or partially be light-absorbing, so that the translucent layer also may be carried failed ⁇ Nend, for example, diffuse or milky.
- a Luzent here designated as trans-layer is formed as transparent as possible, so that in particular the absorption of light is as low as possible.
- the organic functional; Layers stack at least one organic Lieh emitting layer disposed between a hole-conducting layer and an electron-conducting layer.
- the organic hole-conducting layer can be arranged on the translucent electrode, above it the at least one organic light-emitting layer and above this the organic-electron-conducting layer.
- the organic functional layer stack may also include a this inverted structure, be ⁇ indicated that in this case, conductive on the translucent electrode, the organic electron-conducting layer over the at ⁇ least an organic light-emitting layer and above this the organic hole Layer is arranged.
- the substrate is designed to be translucent and the translucent electrode is arranged between the translucent substrate and the organic functional stack, so that light generated in the at least one organic light-emitting layer is emitted through the translucent electrode and the translucent substrate can.
- Such or ⁇ ganisches light emitting device can be referred to as so- ⁇ -called "bottom emitter”.
- the substrate is one or more materials in the form ei ⁇ ner layer, a sheet, a film or a laminate may comprise, selected from glass, quartz, plastic
- the substrate comprises or is glass, for example in the form of a glass layer, glass sheet or glass plate.
- an optical decoupling layer is applied to the substrate, on which in turn the translucent electrode is arranged.
- the optical coupling layer ⁇ may be particularly suitable for so-called internal coupling out and provided, that is to Verringe- ⁇
- the optical coupling-out layer may comprise a material which has a refractive index of greater than or equal to 1.6.
- the refractive index of the optical coupling-out layer is greater than or equal to 1.8 and particularly preferably greater than or equal to 1.85. It is particularly advantageous if the optical coupling-out layer has a refractive index which is greater than or equal to one
- the optical coupling-out may for example be a so- ⁇ -called high-refractive index glass, ie a glass with a Bre ⁇ monitoring index of greater than or equal to 1.8, and especially before ⁇ Trains t is greater than or equal to 1.85, for example with a refractive index of 1.9 , exhibit.
- a so- ⁇ -called high-refractive index glass ie a glass with a Bre ⁇ monitoring index of greater than or equal to 1.8, and especially before ⁇ Trains t is greater than or equal to 1.85, for example with a refractive index of 1.9 , exhibit.
- the optical output coupling ⁇ layer an organic material, in particular a polymer ⁇ based material, which may be, for example, wet-chemical applied to the substrate.
- the optical coupling-out layer can for this purpose comprise one or more of the following materials: polycarbonate (PC), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), Polyu ⁇ rethane (PU), polyacrylate such as polymethyl methacrylate (PMMA), epoxy.
- the optical coupling-out layer is light-scattering.
- the optical Auskoppel ⁇ layer for example, scattering centers, which in one of r
- the pre ⁇ named materials form to a matrix material in which the scattering centers are embedded.
- the scattering centers may be formed by regions and / or particles having a higher or lower refractive index than the matrix material.
- the scattering centers can be formed by particles, for example S1O2, T1O2, RZ2, Al2O3, or by pores, which can be air-filled, for example.
- the at least one organic light-emitting diode isoe.g., a light-emitting diode (LED), a light-emitting diode (LED), or a light-emitting diode (LED), a light-emitting diode (LED), or a light-emitting diode (LED), a light-emitting diode (LED), or a light-emitting diode (Di)-dioemitting
- the angeord ⁇ Neten between the at least one organic light-emitting layer and the reflective electrode of the organic functional layers organic functional stack of layers have a total thickness of greater than or equal to 150 nm.
- the La ⁇ Dungsslose conductive layer disposed between the at least one organic light emitting layer and the reflective electrode so depending on the above-described arrangement, the electron-conducting layer or the hole-conducting layer, such a thickness.
- the organic light emitting device a translucent sub ⁇ strat, on which an optical coupling-out layer is applied over this, a translucent electrode, and it is an organic functional layer stack having organic functional layers comprising an organic hole-conducting layer on the translucent Electrode, at least one organic light-emitting layer on the holes conductive layer and about an organic electron lei ⁇ tend layer.
- a reflective electrode is ordered, wherein the at least one organic light emitting ⁇ ing layer has a distance of greater than or equal to 150 nm to the reflective electrode.
- the organic light emitting device a transluzen- tes substrate on which an optical coupling-out layer is brought to ⁇ and above this a translucent electrode and above a stack of organic functional layers with or- ganic functional layer comprising an organic electron conductive layer on the translucent electrode, at least one organic light-emitting layer on the electron-conducting layer and above an organic Lö ⁇ cher conductive layer.
- a reflective electrode is arranged, wherein the at least one organic light-emitting layer has a distance of greater than or equal to 150 nm to the reflecting electrode.
- no additional or ⁇ ganic light emitting layer is disposed between the Kursin- least one organic light emitting layer with the distance of greater than or equal to 150 nm for the reflective electrode and the reflective electrode.
- only non-radiative organic functional Schich ⁇ th thus in particular according to the above-described arrangement is located between the reflective elec- rode and the at least one organic light-emitting layer, the hole transporting layer or the electron-conducting layer, so that the is at least one organic light-emitting layer with the distance of greater than or equal to 150 nm for the reflective electrode of the reflective electrode nearest light-emitting layer of the organic functional layers ⁇ 's stack.
- the reflective Electrode can in particular also be routed directly to the holes ⁇ de layer or the electron conducting layer are adjacent.
- the optical length between the at least one light-emitting layer and the reflective electrode for a wavelength of ⁇ example 600 nm is greater than or equal to 1.6 times of 150 nm and less than or equal to 1.8 times of 225 nm.
- the values 1.6 and 1.8 correspond to a range of preferred refractive index values.
- the distance of the at least one or ganic ⁇ light-emitting layer and the reflective electrode may be greater than or equal to 180 nm and less than or equal to 225 nm.
- Layer of generated light results, which is coupled in the form of plasmons in the reflective electrode.
- the distance of the at ⁇ least one organic light-emitting layer to the reflective electrode can be chosen such that the relative proportion of the radiation power in the at least one organic light-emitting layer formed, in the form of plasmons, in particular surface plasmon into which the reflective electrode is coupled is less than or equal to 10%. Accordingly, in such Ab ⁇ the proportion of the generated radiation power or the light generated in the organic layers "
- this proportion can be extracted using the optical coupling-out at ⁇ least partially emitted from the organic light component so that when the here-described ⁇ NEN organic light emitting device, it is possible that radiated through the substrate optical power in the United ⁇ equal to known OLEDs with a typically much smaller distance between the at least one organic light-emitting layer and the reflective electrode to enlarge.
- An encapsulation arrangement can furthermore be arranged above the electrodes and the organic layers.
- the encapsulation arrangement may be in the form of a
- Glass cover or, preferably, be designed in the form of a thin-layer encapsulation.
- a glass lid for example in the form of a glass substrate with a cavity, can be adhesively bonded to the substrate by means of an adhesive layer.
- a humidity can be absorbent material (getter), beispielswei ⁇ se from zeolite, still glued to moisture or Sau ⁇ erstoff which can penetrate through the adhesive to the bin.
- the thin-layer encapsulation is designed to be of atmospheric substances can be penetrated at most to very small proportions.
- this barrier effect is essentially produced by barrier layers and / or passivation layers embodied as thin layers, which are part of the encapsulation arrangement.
- the layers of the encapsulation arrangement generally have a thickness of less than or equal to a few 100 nm.
- the thin-layer encapsulation may comprise or consist of thin layers which are responsible for the barrier effect of the encapsulation arrangement.
- the thin layers can, for example, by means of a Atomlage- nabborge Kunststoffs ( "Atomic Layer Deposition", ALD) ⁇ be introduced.
- Suitable materials for the layers of the Verkapselungsan extract are for example alumina,
- the encapsulation arrangement preferably has a layer sequence with a plurality of the thin layers, each having a thickness between an atomic layer and 10 nm, the boundaries being included.
- the Verkapselungsan Aunt centering layers at least one or a plurality of further layers, ie, in particular cash and / or passivation layers have formed by thermal evaporation or by means of a plasma ⁇ -based process, such as sputtering or plasma-enhanced chemical vapor deposition ("Plasma-enhanced chemical vapor deposition", PECVD), suitable materials for this may be the aforementioned materials as well
- each may have a thickness between 1 nm and 5 ym, and preferably between 1 nm and 400 nm, with the limits included.
- an optical coupling-out layer formed of a poly mer ⁇ that as thin tikverkapselung formed Verkapselungsan extract formed thereon under the translucent electrode.
- the organic light-emitting component can thus be sealed and encapsulated from below, ie below the translucent electrode.
- Layer architecture for the organic light-emitting device can be understood, which may be particularly distinguished in their advantageous interaction.
- the translucent portion of the organic light-emitting device can be understood, which may be particularly distinguished in their advantageous interaction.
- Electrode has a refractive index which is adapted to the refractive index of the organic layers and preferably corresponds to the layer thickness-weighted average of the refractive indices of the organic layers.
- the translucent electrode may in particular have a refractive index greater than or equal to 1.6 and particularly preferably greater than or equal to 1.7 ⁇ .
- a Bre ⁇ index of refraction for the translucent electrode in a range of greater than or equal to 1.7 and less than or equal to 2.1 has proven to be particularly advantageous.
- the translucent electrode has a low absorption, in particular in a spectral range of more than 450 nm, for example in a visible spectral range between 450 nm and 640 nm.
- the translucent electrode has an absorption coefficient k of less than or equal to 0.005 in such a spectral range.
- the total transmission of the translucent electrode in the visible spectral range should not fall below 80% and thus be greater than or equal to 80%.
- the translucent electrode is designed as an anode and can thus serve as holes in ⁇ jifugdes material.
- the reflective electrode is then formed as a cathode.
- the trans ⁇ lucent electrode can also be designed as a cathode and thus serve as an electron injecting material.
- the reflecting electrode is then designed as an anode.
- the Ausbil ⁇ dung of the translucent electrode and the reflective electrode as the anode or cathode is particularly directed to the above-described structure of the organic functional layer stack.
- the translucent electrode may for example comprise a transpa ⁇ rentes conductive oxide or consist of a transparent conductive oxide.
- Transparent conductive oxides (trans ⁇ parent conductive oxides, or "TCO") are transparent, managerial tend materials, usually metal oxides, such as zinc oxide ⁇ example, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin (ITO).
- Sn0 2 or ln 2 0 3 also includes ternary metal oxygen compounds, such as Zn 2 Sn0 4 , CdSn0 3 , ZnSn0 3 , Mgln 2 0 4 , Galn0 3 , Zn 2 In 2 0 5 or In 4 Sn 3 0i 2 or mixtures of different transparent conductive oxides to the group of TCOs.
- the TCOs do not necessarily correspond to a stoichiometric composition and may also be p- or n-doped.
- the translucent electrode comprises or is ITO.
- the translucent electrode may have a thickness of greater than or equal to 50 nm and less than or equal to 200 nm. In such a thickness range, the transmission in the visible spectral range of the translucent electrode is greater than or equal to 80% and the resistivity p in a range of about 150 to 500 ⁇ -cm.
- the reflective electrode on a metal which may be selected from an aluminum ⁇ nium, barium, indium, silver, gold, magnesium, calcium, and lithium and compounds, combinations and alloys.
- the reflective electrode may comprise Ag, Al or alloys with them, for example Ag: Mg, Ag: Ca, Mg: Al.
- the reflective electrode may also comprise one of the above-mentioned TCO materials.
- the reflective Elect ⁇ rode has at least two or more layers and is designed as a so-called bi-layer or multi-layer electrode.
- the reflective electrode for this purpose facing the organic layers an Ag layer having a thickness of greater than or equal to 30 nm and less than or equal to 50 nm, on which an aluminum layer is applied.
- the reflective electrode it is also possible for the reflective electrode to be used as an alternative to metal-metal-layer combinations or metal
- the reflective electrode may have a combination Nati ⁇ on of a TCO and a silver layer. It is also possible that, for example, a metal layer is arranged between two TCO layers. In such embodiments, one or more layers may also be formed as nucleation layers. Furthermore, it is also possible that the reflective Elect ⁇ rode has further optical adjustment layer for adjusting the reflectivity of the reflected or areas of the spectrum ⁇ kingdom.
- Such optical matching layers Kgs ⁇ NEN emitting at particular monochrome organic light-emitting layers respectively emitting monochromatic organic light emitting devices be advantageous.
- An optical matching layer should advantageously be conductive and to ei ⁇ ne or more TCO layers can comprise, for example, which are arranged in a Bragg mirror-like arrangement above the other.
- the reflective electrode has a reflectivity of greater than or equal to 80% in the visible spectral range.
- the reflective electrode can, for example, by means of ei ⁇ nes physical vapor deposition ("physical vapor deposition", PVD), vaporized by electron beam and / or produced by sputtering.
- the organic functional layers between the producers translucent electrode and the reflective electrode, that is to ⁇ least the holes conductive layer, at least one organic light-emitting layer and the electron conducting layer may comprise organic polymers, organic oligomers, organic monomers, organic small, non-polymeric Mole ⁇ molecules or low molecular weight compounds ("small molecules”) or combinations thereof.
- the charge carrier conductive layer between the at least one organic light-emitting layer and the reflective electrode that is, depending on the configuration of the organic functional layer stack according to the above embodiments, the
- the charge carrier conductive layer has a thickness which corresponds to the aforementioned distance. Due to the large thickness of such a charge carrier conductive layer, the dopant advantageously brings about an increase in the conductivity in order to keep the operating voltage of the organic light-emitting component low.
- the holes conductive layer on at least one hole injection layer, a hole ⁇ transport layer or a combination of these.
- doped layers of molecular weight compounds as well as electrically conductive polymers are used as hole-transport or hole-injection layer so ⁇ well in question.
- materials particularly for a hole transport layer can be in ⁇ play, tertiary amines, carbazole derivatives, aniline conductive poly- or polyethylenedioxythiophene expanded advantageous sen.
- tertiary amines tertiary amines, carbazole derivatives, aniline conductive poly- or polyethylenedioxythiophene expanded advantageous sen.
- aniline conductive poly- or polyethylenedioxythiophene expanded advantageous sen can be useful:
- spiro-BPA 2,2'-bis (N, -di-phenyl-amino) -9,9-spirobifluorene
- a dopant for example, a metal oxide, egg ⁇ ne organometallic compound, an organic material or a mixture Re 2 Ü 7 and Re 2 0s thereof may be used, for example, WO 3, m0o 3, V2O 5,, di-rhodium-tetra-trifluoroacetate (Rh 2 (TFA) 4) or the isoelectronic ruthenium Ru 2 (TFA) 2 (CO) 2 or an organic material having aromatic functional groups or an aromatic organic ⁇ ULTRASONIC materials is, for example, aromatic materials with a distinct number of fluorine and / or cyanide (CN) substituents.
- CN cyanide
- Low molecular weight compounds can be applied in particular by thermal evaporation in vacuo (vacuum thermal evaporation, VTE or physical vapor deposition, PVD) or from the liquid phase.
- Polymeric materials can be applied as game from the liquid phase at ⁇ or formed by concatenation of low molecular weight starting materials on the surface of the translucent electrode ⁇ the.
- a combination of both approaches is possible, in which a thin layer of a p-type hole injection layer with a thickness of 10 to 20 nm is vapor-deposited on a hole injection layer which has been applied by means of a liquid method.
- the holes conductive layer preferably has a refractive index of greater than ⁇ or equal to 1.6 and more preferably in a range of greater than or equal to 1.6 and less than or equal to 1.
- the light-emitting layer comprises an electroluminescent material and is particularly preferably designed as an electroluminescent layer or electroluminescent layer stack.
- Suitable materials for this are materials which have a radiation lung emission have due to fluorescence or phosphorescence, for example, polyfluorene, polythiophene or polyvinyl lyphenylen or derivatives, compounds, mixtures or Copo- mers thereof, for example 2- or 2, 5-substituted poly-p-phenylene vinylene, as well as metal complexes, for example Iri ⁇ dium Complexes such as blue phosphorescent FIrPic (bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) iridium III), green phosphorescing Ir (ppy) 3 (tris (2-phenylpyridine) iridium III ), red phosphorescent Ru (dtb-bpy) 3 * 2 (
- the materials of the light-emitting layer can furthermore also be known as the so-called singlet or triplet
- the at least one organic light-emitting layer can produce monochromatic, dichroic or polychromatic light, for example white light.
- the electron-conducting layer has at least one electron-injection layer, an electron-transport layer or a combination of these.
- NTAZ naphthalen-1-yl
- NTAZ 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-l, 10-phenanthroline (NBphen)
- an alkali metal an alkali metal salt, an alkaline earth metal salt, a metallor- ganic compound, a molecular doping or Mi ⁇ research
- a metallocene which is a organometallic compound with a metal M and two cyclopentadienyl radicals (Cp) in the form M (Cp) 2
- the metal may for example comprise or be tungsten, molybdenum and / or chromium.
- the electron-conducting layer may have an electron-transport layer, which may be, for example, 2.9- Dimethyl-4,7-diphenyl-l, 10-phenanthroline (BCP) or 4,7-diphenyl-1,10-phenanthroline (BPhen).
- This material may preferably have a dopant which is selected from Li, CS 2 CO 3 , CS 3 P0 4 or a molecular doping.
- one or more further organic layers may be present in the organic functional layer stack.
- ⁇ be ⁇ assigns can play emitting electrons between the conductive layer and the light layer to be a hole-blocking layer. It is also possible that an electron-blocking layer is disposed between the hole-conducting layer and the light-emitting layer.
- G is the organic layers of the organic functional layer stack, in particular those having a thickness of greater than or equal to 5 nm, an absorption coefficient k of less than or equal to 0.005 in the visible spectral range, so for wavelengths greater than 450 nm.
- this also applies to the hole-conducting layer, which may have, for example, a hole transport layer with a thickness of up to 350 nm.
- a plurality of light-emitting layers are arranged between the hole-conducting layer and the electron-conducting layer as at least one organic light-emitting layer.
- the plurality of light-emitting layers can form a layer stack.
- an electron-conducting layer and a hole to be conductive between adjacent light-emitting layers Layer are arranged.
- the organic light emitting device may particularly comprise between the translucent electrode and the reflective electrode, at least two or more functional layer stack units each having at least one organic electron-conductive layer and an organic hole-conducting layer with an Between the seats ⁇ rule arranged organic light-emitting layer ,
- the functional layer stack units may be connected in series such that an electron conduct de ⁇ layer of a layer stack unit to a hole conducting layer of an adjacent unit layers stack adjacent or vice versa.
- Such a combination of electrons and holes adjacent conductive layers between which functions as a charge carrier generating region undoped layer may be further disposed may also as so- ⁇ -called "charge generation layer" (CGL) are referred to.
- CGL charge generation layer
- the at least one organic light-emitting layer in the form of a single light emitting layer or a plurality of light-emitting layers can be particularly preferably emit visible light wavelength region ⁇ in a narrow or wide Wel, that is monochrome or multi-colored or, for example white light.
- the at least one organic light-emitting layer may have, in the form of a single layer or a plurality of light-emitting layers, one or more organic light-emitting materials for this purpose. Multicolor or white light may be generated by the combination of various organic light emitting materials in the at least one light emitting layer.
- the organic light emitting preferably in one of the following combinations:
- One of the light-emitting layers emits red and green light, another light-emitting layer emits ⁇ blue light.
- EXISTING ⁇ There are at least three light emitting layers EXISTING ⁇ , of which red, emits a yellow and a blue light.
- both the blue-emitting layers and the red and green-emitting layers seen from the substrate can form, for example, the lowermost or uppermost light-emitting layers.
- the organic layers of the organic light emitting device described herein may have a total thickness of at least 250 nm according to the previously described embodiments.
- the total thickness of the organic layers can be up to 1 ⁇ m.
- organic light-emitting device can be achieved by the distance of greater than or equal to 150 nm between the at least one organic light-emitting layer and the reflective electrode effective Un ⁇ suppression of the above-described plasmon loss channel, whereby in particular together with the opti ⁇ rule outcoupling between the translucent substrate and the translucent electrode an increase in efficiency compared to known OLEDs can be achieved. It is particularly advantageous if the optical Auskoppel ⁇ layer and the translucent electrode have the above refractive indices.
- Figure 1A is a schematic representation of an organic compound
- Figure 1B is a schematic representation of an organic compound
- Figure 2 is a schematic representation of relative proportions of decoupling and loss channels in the active
- FIG. 3 shows a schematic representation of an organic light-emitting component according to a further exemplary embodiment.
- FIG. 1 shows an exemplary embodiment of an organic light-emitting component 100. This has a substrate 1 on which an optical decoupling layer 2 is applied.
- the organic light emitting device is formed as a so- ⁇ -called "bottom emitter” and has for this purpose a translucent substrate made of glass.
- the substrate 1 can also be another translucent material, wherein ⁇ play, have a plastic or a glass-plastic laminate, or thereof.
- the optical coupling-out layer 2 has the effective light outcoupling ⁇ a refractive index which is greater than or equal to a layer thickness weighted average refractive index of the organic functional layers and the translucent electrode.
- the optical coupling-out layer 2 also has in the overall exemplary embodiment shown to a glass on, into ⁇ particular of a high refractive index glass having a refractive index of about 1.9 ⁇ .
- the optical Auspellent ⁇ pel Anlagen 2 also based on a polymer material, as described above in the general part.
- the optical coupling-out layer 2 can cause, as described above in the general part, at least part of the light transmitted in the translucent electrode 3 or in the organic layers, in particular in the hole-conducting layer 4, to be emitted from the organic light-emitting component 100 coupled through the substrate 1 who ⁇ can.
- the Verkapselungsan extract for example, in the form of a glass cover or, preferably, be in the form of a Dünn Anlagenverkap ⁇ Selung, as described above in the general part.
- the translucent electrode 3 has a refractive index of greater than or equal to 1.6, and preferably greater than or equal to 1.7 and less than or equal to 2.1. Furthermore, thickness and material of the translucent electrode 3 are selected such that the absorption coefficient of 450 nm to 640 nm or less is in a visible areas of the spectrum ⁇ rich equal to 0.005. In particular, the transmission of the translucent electrodes 3 in the visible spectral range is greater than or equal to 80%.
- the translucent Elect ⁇ rode is for this purpose made of indium tin oxide (ITO) having a thickness GroE ⁇ SSER or equal to 50 nm and less than or equal to 200 nm.
- ITO indium tin oxide
- the holes conductive layer 4 has at least one Lochtrans ⁇ port layer, which may have a thickness of up to 350 nm.
- the hole-conducting layer 4 between the hole transport layer and the translucent electrode 3 may have a hole injection layer which may have a thickness in the range of a few tens of nanometers. Both the hole transport layer and the hole injection layer may be made from the materials described above in the general part, for example from small molecules or from polymers.
- the at least one organic light-emitting layer 5 has at least one organic material which emits light in a visible wavelength range during operation of the organic light-emitting component 100, as indicated by the schematically indicated interconnection of the electrodes 3 and 7.
- the organic light emit ⁇ animal layer 5 include one or more of the above in the general part materials.
- the electron-conducting layer 6 is arranged directly adjacent to the reflective electrode 7 and has a thickness of greater than or equal to 150 nm and preferably greater than or equal to 180 nm.
- the at least one organic light emitting Layer 5 to the reflective electrode 7 a distance of greater than or equal to 150 nm and preferably greater than or equal to 180 nm.
- the optical length between the at least ei ⁇ NEN light-emitting layer 5 and the reflective electrode is greater at a wavelength of 600 nm or equal to 1.6 to 150 nm and less than or equal 1.8-225 nm.
- a range between 150 nm and 225 nm, and preferably between 180 nm and 220 nm, wherein the limits are included in each case, has proven to be particularly advantageous for the distance.
- the electron-conducting layer 6 In order to ensure a sufficiently high conductivity of the electron-conducting layer 6 at the aforementioned thickness, it is conductivity doped.
- the electron-conducting layer an electron transport layer on ⁇ which has as matrix material BCP or BPhen doped with Li, CS 2 CO 3, CS 3 P0 4 or through a molecular doping.
- the electron-conductive layer 6 between the electron-transport layer and the reflective electrode 7 may have an electron-injection layer.
- the aforementioned thickness of the electron-conducting layer 6 refers to a total thickness of the electron injection layer and the electron transport layer.
- emitting between the organic light-emitting layer 5 and the electron-conducting layer 6 at least one further or- ganic layer can be arranged, for example, a hole blocking layer ⁇ .
- the total thickness of all of the organic emitting between ⁇ 's light-emitting layer 5 and the reflective electrode arranged organic functional layers is selected so that the above-described distance between the organic light-emitting layer 5 and the reflective electrode 7 is achieved.
- the reflective electrode is in the exemplary embodiment shown, play of metal and has in particular Ag, Al or alloy prof ⁇ gene such as Ag: Mg, Ag: Ca or Mg: Al on.
- the reflective electrode 7 has at least two or more metal layers or one or more TCO layers in combination with one or more metal layers.
- the reflective electrode 7 has at least two or more metal layers or one or more TCO layers in combination with one or more metal layers.
- Electrode 7 also optical matching layers, for example, from a TCO layer stack having a Bragg mirror-like design to adapt the reflectivity of the reflective electrode 7 on the emission spectrum of the light-emitting layer 5.
- the reflective electrode 7 has a reflectivity of greater than or equal to 80% in the visible spectral range ⁇ cash.
- those organic layers of the organic functional layer stack in particular those which have a thickness of greater than or equal to 5 nm, have an absorption coefficient k of less than or equal to 0.005 in the visible spectral range, ie for wavelengths greater than 450 nm ,
- organic layers for example an electron-blocking layer, may be present between the light-emitting layer and the hole-conducting layer 4.
- FIG. 1B a further embodiment of a light emitting device or ⁇ ganisches 101 is shown, in which in comparison to the previous embodiment, the order of the organic light emitting layer stack is reversed and that on the translucent electrode 3 has an electron-conducting layer 6, about at least one organic ⁇ light-emitting layer 5 and above an organic holes conductive layer 4, so that in this embodiment, the hole-conducting layer 4 between the zu ⁇ least one organic light-emitting layer 5 and the reflective electrode 7 is arranged.
- the materials of the layers of the device 101 may be implemented as in the previous embodiment and as described in the general part.
- the organic light-emitting component 101 of FIG. 1B also has a distance of greater than or equal to 150 nm between the at least one light-emitting layer 5 and the reflective electrode.
- the particularly large distance of greater than or equal to 150 nm described here between the light-emitting layer 5 and the reflective electrode 7 in the embodiments shown can, together with the optical coupling-out layer 2, bring about a significant increase in efficiency in comparison with known OLEDs.
- Figure 2 which is based on a standard glass substrate without optical coupling-out or other off ⁇ coupling measures on a simulation of a conventional green emitting OLED and depending on the thickness D of between the light emitting layer and the reflective electrode arranged layer or layers, which corresponds to the distance between the reflective electrode and the light-emitting layer, the relative proportions L of the coupling-out and loss channels of the light generated in the light ⁇ generating layer light shows.
- the shown relati ⁇ ven shares of Auskoppel- and loss channels are not limiting for the embodiments described here to understand and may vary depending on the structure and choice of materials of the individual components.
- the region 21 indicates the relative proportion of the light which is coupled out of the translucent substrate.
- Loading ⁇ rich 22 corresponds to the relative proportion of light that is guided in a glass substrate by waveguiding.
- the region 23 denotes the relative amount of light that is lost through absorption from ⁇ in the organic layers, the translucent electrode and the substrate.
- the region 24 denotes the relative proportion of the light which is guided in the translucent electrode and the organic layers, for example in the case of a layer sequence as in FIG. 1A, in particular in the hole-conducting layer, by waveguide effects.
- the area 25 identifies the
- the relative proportion of the light 21 coupled out from the substrate rises slightly above a value for D of 150 nm, whereas the value of the loss channel caused by the plasmon coupling, that is to say the region 25, decreases substantially with increasing value for D. , whereby the relative proportion of the light guided in the organic layers and the translucent electrode increases.
- the fraction 25 of the plasmon loss channel for a value of D of greater than or equal to 150 nm is less than 10%.
- optical Auskop ⁇ pel Mrs 2 can in particular the emitting at a distance D greater than or equal to 150 nm between the organic light-emitting layer 5 and the reflective electrode 7 dominant proportion of the light of the translucent Electrode 3 and the organic layers is led to ⁇ at least partially decoupled. Thereby can be achieved by an increased light output ⁇ coupling for the herein described organic light emit animal components forming a significant increase in efficiency.
- FIG. 3 shows a further embodiment for a orga ⁇ African light emitting device 102 is shown, illustrating a modification of the embodiment of Figure 1A, and includes emitting light compared to that of a plurality of layers, one of which is shown for purposes of illustration, the layers 51 and 5n are between which more light-emitting layers can be located.
- each of the light-emitting layers 51, 5n is disposed between a hole-conducting layer and an electron-conducting layer, such as the light-emitting layer 51 shown in FIG.
- Light-emitting component 102 thus has functional stacking units arranged in series between the translucent electrode 3 and the reflective electrode 7, with conductive and electron-conducting layers between adjacent holes, such as the electron-conductive layer 61 recognizable in FIG adjacent holes conductive layer 41, a so- ⁇ -called “charge generation layer” (CGL) 8 is arranged, which serves as a so-called charge carrier pair-forming zone, whereby the series voltage of the organic layer stack can be reduced.
- CGL charge generation layer
- a CGL on a p-doped and n-doped layer, between which is a non-doped intermediate layer, for example of a metal oxide is ⁇ arranged.
- the highest electron-conducting layer 6 of figure 1A is as described in exporting ⁇ approximately example directly adjacent to and disposed adjacent to the reflective electrode 7 and has a thickness in connection with the previous execution examples described, so that the distance between the in Figure 3 shown topmost and thus the reflective electrode 7 is arranged next lying light emitting ⁇ layer 5n and the reflective electrode 7 is greater than or equal to 150 nm in order to suppress a Plasmonenanregung in the reflecting electrode 7 as possible.
- the organic layers of the embodiments shown herein have for each functional layer stack units to a thickness of at least 250 nm, so that the ge ⁇ stacked structure in Figure 3 may have a total thickness of up to 1 ⁇ .
- a structure with two light emit ⁇ animal layers that emit red / green and blue, or both emit white or a structure with three light-emitting layers that emit all white, which emit red, green and blue or which emit red / green as well as blue and blue.
- the layer order of the organic layers as shown in Figure 3, the structure of the organic layer stack ⁇ rule of the embodiment of Figure 3, as in the embodiment of Figure 1B also can be inverted.
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- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020147012526A KR20140095486A (ko) | 2011-11-14 | 2012-11-09 | 유기 발광 부품 |
| CN201280055901.XA CN103931011B (zh) | 2011-11-14 | 2012-11-09 | 有机发光器件 |
| JP2014541612A JP2015502006A (ja) | 2011-11-14 | 2012-11-09 | 有機発光素子 |
| US13/261,887 US9293733B2 (en) | 2011-11-14 | 2012-11-09 | Organic light-emitting component having a layer with a low absorption coefficient |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011086255.2 | 2011-11-14 | ||
| DE102011086255A DE102011086255A1 (de) | 2011-11-14 | 2011-11-14 | Organisches licht emittierendes bauelement |
Publications (1)
| Publication Number | Publication Date |
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| WO2013072250A1 true WO2013072250A1 (de) | 2013-05-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2012/072233 Ceased WO2013072250A1 (de) | 2011-11-14 | 2012-11-09 | Organisches licht emittierendes bauelement |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9293733B2 (de) |
| JP (1) | JP2015502006A (de) |
| KR (1) | KR20140095486A (de) |
| CN (1) | CN103931011B (de) |
| DE (1) | DE102011086255A1 (de) |
| WO (1) | WO2013072250A1 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016101710A1 (de) | 2016-02-01 | 2017-08-03 | Osram Oled Gmbh | OLED und Verfahren zur Herstellung einer OLED |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012203583B4 (de) | 2012-03-07 | 2021-03-18 | Pictiva Displays International Limited | Organisches Licht emittierendes Bauelement |
| JPWO2016043084A1 (ja) * | 2014-09-18 | 2017-07-27 | 旭硝子株式会社 | 発光素子および発電素子 |
| KR101759294B1 (ko) * | 2015-01-05 | 2017-07-18 | 코닝정밀소재 주식회사 | 탠덤형 유기발광소자 |
| CN109004101B (zh) * | 2018-02-11 | 2021-07-20 | 宁波卢米蓝新材料有限公司 | 一种有机电致发光器件 |
| CN108987603B (zh) * | 2018-02-11 | 2021-07-20 | 宁波卢米蓝新材料有限公司 | 一种绿光有机电致发光器件 |
| CN108987604B (zh) * | 2018-02-11 | 2021-08-24 | 宁波卢米蓝新材料有限公司 | 一种红光有机电致发光器件 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006129265A2 (en) * | 2005-06-03 | 2006-12-07 | Philips Intellectual Property & Standards Gmbh | Organic electroluminescent light source |
| US20070063628A1 (en) * | 2005-09-22 | 2007-03-22 | Eastman Kodak Company | OLED device having improved light output |
| US20070257608A1 (en) | 2006-05-05 | 2007-11-08 | Eastman Kodak Company | Electroluminescent device having improved light output |
| WO2011132773A1 (ja) * | 2010-04-22 | 2011-10-27 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子及び照明装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003344869A (ja) * | 2002-05-29 | 2003-12-03 | Sharp Corp | 液晶パネルおよびその製造方法、並びにプロジェクション型液晶表示装置 |
| US6936961B2 (en) | 2003-05-13 | 2005-08-30 | Eastman Kodak Company | Cascaded organic electroluminescent device having connecting units with N-type and P-type organic layers |
| US7474048B2 (en) | 2005-06-01 | 2009-01-06 | The Trustees Of Princeton University | Fluorescent filtered electrophosphorescence |
| JP2007035432A (ja) * | 2005-07-27 | 2007-02-08 | Fuji Electric Holdings Co Ltd | 有機el素子およびその製造方法 |
| US7911133B2 (en) * | 2007-05-10 | 2011-03-22 | Global Oled Technology Llc | Electroluminescent device having improved light output |
| DE102008022830A1 (de) * | 2007-11-30 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement |
| DE102009037185B4 (de) * | 2009-05-29 | 2018-11-22 | Osram Oled Gmbh | Organische Leuchtdiode |
| DE102010054893A1 (de) * | 2010-12-17 | 2012-06-21 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende organisch-elektronische Vorrichtung und Verfahren zu deren Herstellung |
-
2011
- 2011-11-14 DE DE102011086255A patent/DE102011086255A1/de active Granted
-
2012
- 2012-11-09 CN CN201280055901.XA patent/CN103931011B/zh active Active
- 2012-11-09 US US13/261,887 patent/US9293733B2/en active Active
- 2012-11-09 JP JP2014541612A patent/JP2015502006A/ja active Pending
- 2012-11-09 KR KR1020147012526A patent/KR20140095486A/ko not_active Ceased
- 2012-11-09 WO PCT/EP2012/072233 patent/WO2013072250A1/de not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006129265A2 (en) * | 2005-06-03 | 2006-12-07 | Philips Intellectual Property & Standards Gmbh | Organic electroluminescent light source |
| US20070063628A1 (en) * | 2005-09-22 | 2007-03-22 | Eastman Kodak Company | OLED device having improved light output |
| US20070257608A1 (en) | 2006-05-05 | 2007-11-08 | Eastman Kodak Company | Electroluminescent device having improved light output |
| WO2011132773A1 (ja) * | 2010-04-22 | 2011-10-27 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子及び照明装置 |
| US20120286258A1 (en) * | 2010-04-22 | 2012-11-15 | Idemitsu Kosan Co., Ltd. | Organic electroluminescent element and lighting device |
Non-Patent Citations (3)
| Title |
|---|
| DO ET AL., ADV. MAT., vol. 15, 2003, pages 1214 |
| DRUCKSCHRIFT Y. SUN; S.R. FORREST, NATURE PHOTONICS, vol. 2, 2008, pages 483 |
| ZIEBARTH ET AL., ADV. FUNCT. MAT., vol. 14, 2004, pages 451 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016101710A1 (de) | 2016-02-01 | 2017-08-03 | Osram Oled Gmbh | OLED und Verfahren zur Herstellung einer OLED |
| US9911934B2 (en) | 2016-02-01 | 2018-03-06 | Osram Oled Gmbh | OLED and method for producing an OLED |
| DE102016101710B4 (de) | 2016-02-01 | 2025-02-06 | Pictiva Displays International Limited | OLED und Verfahren zur Herstellung einer OLED |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102011086255A1 (de) | 2013-05-16 |
| US20150076452A1 (en) | 2015-03-19 |
| CN103931011A (zh) | 2014-07-16 |
| CN103931011B (zh) | 2017-02-22 |
| KR20140095486A (ko) | 2014-08-01 |
| JP2015502006A (ja) | 2015-01-19 |
| US9293733B2 (en) | 2016-03-22 |
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