[go: up one dir, main page]

WO2013066006A1 - Dispositif à trois bornes pour transition métal-isolant, système électrique et électronique comportant un tel dispositif, et procédé pour l'élimination de signaux de bruit électrostatique - Google Patents

Dispositif à trois bornes pour transition métal-isolant, système électrique et électronique comportant un tel dispositif, et procédé pour l'élimination de signaux de bruit électrostatique Download PDF

Info

Publication number
WO2013066006A1
WO2013066006A1 PCT/KR2012/008886 KR2012008886W WO2013066006A1 WO 2013066006 A1 WO2013066006 A1 WO 2013066006A1 KR 2012008886 W KR2012008886 W KR 2012008886W WO 2013066006 A1 WO2013066006 A1 WO 2013066006A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal
terminal
insulator transition
region
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/008886
Other languages
English (en)
Korean (ko)
Inventor
김현탁
김봉준
최정용
박종찬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronics and Telecommunications Research Institute ETRI
Original Assignee
Electronics and Telecommunications Research Institute ETRI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020120073002A external-priority patent/KR101834904B1/ko
Application filed by Electronics and Telecommunications Research Institute ETRI filed Critical Electronics and Telecommunications Research Institute ETRI
Priority to US14/355,384 priority Critical patent/US9595673B2/en
Publication of WO2013066006A1 publication Critical patent/WO2013066006A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H10N99/03—Devices using Mott metal-insulator transition, e.g. field-effect transistor-like devices

Definitions

  • the present invention relates to a technique for effectively removing static electricity that can enter an electrical and electronic system using a metal-insulator transition three terminal element.
  • ESD Electro-Static Discharge
  • FIG. 1A shows a characteristic curve of an electrostatic discharge (ESD) noise signal on a graph of time versus current (or voltage).
  • the horizontal axis represents time and the vertical axis represents current or voltage.
  • the voltage of the ESD noise signal at time point a in FIG. 1A is significantly higher than the voltage of the ESD noise signal at time point b or time c. The key is to effectively and quickly eliminate the ESD noise signal generated at time a.
  • Figure 1b schematically shows an ESD application system to which the MIT device is applied.
  • the ESD noise signal generated at the power supply line PL supplying the power supply 2 can be removed by an MIT element 3 installed between the node NO1 and ground, so that the internal components of the electrical and electronic system 4 are protected from static electricity. Can be protected.
  • the noise-canceling device for removing ESD noise signals requires low quiescent current and high reliability to efficiently remove high-voltage, high-speed ESD noise signals.
  • the present invention has been made in an effort to provide a metal-insulator transition three terminal device having a small standby current and an electric and electronic system having the same.
  • Another technical problem to be solved by the present invention is to provide a method for removing a high-speed high-voltage ESD noise signal as an MIT three-terminal device that causes a metal-insulator transition (MIT) phenomenon.
  • MIT metal-insulator transition
  • the metal-insulator transition three-terminal switch device According to an aspect of an embodiment of the present invention for achieving the above technical problem, the metal-insulator transition three-terminal switch device,
  • the second conductivity type functions as a control region for controlling the discontinuous metal insulator transition occurring at the interface in contact with the first conductivity type first semiconductor region and has a mort critical concentration Nc on top of the first conductivity type first semiconductor region.
  • first conductivity type third semiconductor region disposed above the second conductivity type second semiconductor region and functioning as an inlet region.
  • the metal-insulator transition three-terminal multi-switch device According to another aspect of an embodiment of the present invention for achieving the above technical problem, the metal-insulator transition three-terminal multi-switch device,
  • the second conductivity type functions as a control region for controlling the discontinuous metal insulator transition occurring at the interface in contact with the first conductivity type first semiconductor region and has a mort critical concentration Nc on top of the first conductivity type first semiconductor region.
  • a first conductivity type third semiconductor region disposed over the second conductivity type second semiconductor region and functioning as an inlet region, wherein M x N (where M, N is in the form of a matrix of 1 or more natural numbers each).
  • the metal-insulator transition three-terminal multi-switch device package According to another aspect of an embodiment of the present invention for achieving the above technical problem, the metal-insulator transition three-terminal multi-switch device package,
  • a second conductive doped as a control region for controlling the discontinuous metal insulator transition occurring at the interface in contact with the first conductive type first semiconductor region and having a mort critical concentration Nc on top of the first conductive type first semiconductor region A type second semiconductor region;
  • a first conductivity type third semiconductor region disposed over the second conductivity type second semiconductor region and functioning as an inlet region, wherein M x N (where M, N is each in the form of a matrix of one or more natural numbers) and is packaged as a passivation film.
  • a discontinuous metal insulator transition is generated at the interface where the areas of the outlet and the inlet are contacted to generate an electrostatic noise signal.
  • a metal-insulator transition three terminal type switch element configured to be removed.
  • the inlet terminal is connected to the power line, the outlet terminal is connected to the ground line of the electrical and electronic circuit section, and the control terminal is connected to the power line through a resistor to remove the ESD noise signal based on a hole-driven MIT theory. It includes a step.
  • 1A is a graph illustrating a characteristic curve of an electrostatic discharge (ESD) noise signal
  • 1B is a diagram illustrating an ESD application system to which an MIT device is applied
  • FIG. 2 is a graph showing a current-voltage characteristic curve of a varistor
  • FIG. 3 is a graph showing a current-voltage characteristic curve of a zener diode
  • FIG. 5 is a graph illustrating the I-V characteristic curves of various MIT devices.
  • FIG. 7 is a basic structural diagram of a metal-insulator transition three-terminal switch device (t-switch) according to an embodiment of the present invention.
  • FIG. 8 is a graph showing an I-V characteristic curve of a t-switch according to FIG. 7;
  • FIG. 9 is a graph illustrating a switching characteristic curve of a t-switch according to FIG. 7;
  • FIG. 10A is a diagram illustrating a case in which a t-switch according to FIG. 7 is installed in a circuit
  • FIG. 10B is a table showing quiescent current dependence for each control resistance in the t-switch according to FIG. 7.
  • FIG. 10B is a table showing quiescent current dependence for each control resistance in the t-switch according to FIG. 7.
  • FIG. 11 is a circuit diagram illustrating a case in which t-switches according to FIG. 7 are connected in series.
  • FIG. 11 is a circuit diagram illustrating a case in which t-switches according to FIG. 7 are connected in series.
  • FIG. 12 is a circuit diagram illustrating a case in which a t-switch according to FIG. 7 is connected in a matrix form
  • 13A-13C are graphs showing various test results of the t-switch according to FIG. 7.
  • any element or line is connected to the target element block, it includes not only a direct connection but also a meaning indirectly connected to the target element block through any other layer or element.
  • FIG. 7 is an ESD noise signal removing device according to the present invention.
  • oxide varistors ZnO
  • zener diodes In order to eliminate the ESD noise signal, oxide varistors (ZnO) or zener diodes have been used as noise canceling devices.
  • the current versus voltage characteristic of the varistor is shown as a curved line as in FIG. 2 shows a current-voltage characteristic curve of a varistor, in which the horizontal axis indicates voltage and the vertical axis indicates current.
  • varistors tend to break when ESD noise signals repeatedly enter, making noise rejection less reliable in the long run.
  • the varistor has a disadvantage that the leakage current is very large even at a small voltage.
  • a zener diode has been used to remove an ESD noise signal.
  • 3 is a current-voltage characteristic curve of a zener diode, in which the horizontal axis represents voltage and the vertical axis represents current.
  • a noise canceling device and a technology as a metal-insulator transition (MIT) two-terminal device have been disclosed in Korean Patent Registration No. 0714115 and PCT / KR2006 / 001249.
  • the MIT characteristic of a two-terminal MIT device is shown in FIG.
  • FIG. 4 is a graph showing a characteristic curve of a two-terminal MIT device, in which the horizontal axis represents voltage and the vertical axis represents current.
  • FIG. 5 is a graph showing I-V characteristic curves of various MIT devices, in which the horizontal axis indicates voltage and the vertical axis indicates current.
  • the graph data of FIG. 5 is cited in Figure 1 of the paper 'EEE Electron Device Letters 31 (2010) 14'.
  • the device having the IV characteristic having a small jump width, such as the black line (a) at the top passes the ESD signal well, but the device having the large jump width, such as the bottom red line (e), is easily connected to the ESD signal. Destroyed.
  • the high quiescent current is a fatal flaw in the device.
  • the MIT 2 terminal device made of VO 2 material is difficult to use as an ESD noise canceling device above 60 o C due to MIT at 68 o C.
  • the device disclosed in the above-mentioned paper (IEEE Electron Device Letters 31 (2010) 14) has the above problem.
  • Bipolar junction transistors have also been used to eliminate ESD noise signals.
  • the base of the NPN transistor is connected to the zener diode connected to the power line
  • the collector is connected to the power line
  • the emitter is connected to ground
  • the ESD noise signal exits from the collector to the emitter (e.g., US Patent, US5). , 276,582).
  • a PNP transistor is used to remove an ESD noise signal in a forward (emitter-> collector) manner (US Pat. No. 7,291,888 B2).
  • bipolar transistors do not have a breakdown phenomenon like zener diodes, so the transistors in the forward direction of the ESD noise signal are often destroyed.
  • a three-terminal function using a metal-insulator transition (MIT) two-terminal switch is disclosed in Korean Patent No. 0859717 and PCT Patent WC2009027826-A2.
  • MIT metal-insulator transition
  • the three-terminal device using the MIT two-terminal switch is also based on the characteristics of the MIT two-terminal device, so reliability may be insufficient.
  • MIT is a discontinuous jump phenomenon as described with reference to FIG. 4.
  • metal properties that meet Ohm's law appear after MIT.
  • the MIT device removes the ESD noise signal by causing the ESD noise signal to flow along the metal.
  • the MIT 3-terminal device in order to implement low standby power and high reliability, the MIT 3-terminal device as shown in FIG.
  • t-switch 7 is a basic structural diagram of a metal-insulator transition three-terminal switch element (hereinafter referred to as t-switch) according to an embodiment of the present invention.
  • a t (tri) -switch occurs at a first conductive type first semiconductor region 10 functioning as an outlet region and an interface 15 in contact with the first conductive type first semiconductor region.
  • a second conductivity type second semiconductor region 20 that functions as a control region for controlling the discontinuous metal insulator transition and has a mort critical concentration Nc on top of the first conductivity type first semiconductor region, and the second conductivity type agent
  • a first conductivity type third semiconductor region 30 disposed above the two semiconductor regions and functioning as an inlet region.
  • the second conductivity type may be p-type.
  • the MIT three-terminal device (also called a t-switch) of FIG. 7 has three terminals 12, 22, and the inlet (I), the outlet (O), and the control (C). 32). Element. When a current flows in the C region 20, an MIT occurs, and a current due to the MIT flows from the I region 30 to the O region 10 due to the characteristics of the metal level.
  • the t-switch exhibits a discontinuous jump during turn-on and is switched from the insulator to the metal due to the insulator (or semiconductor) -metal transition (MIT) phenomenon.
  • the t-switch of FIG. 7 is operated based on the Hole-driven MIT theory (Physica C 460-462 (2007) 1076-1078).
  • the Hole-driven MIT theory (Physica C 341-348 (2000) 259; Physica C 460-462 (2007) 1076-1078) can be described with reference to FIG. 6 is a graph showing the results of the Hole-driven MIT theory, the horizontal axis represents the conduction band fill factor and the vertical axis represents the electrical conductivity.
  • FIG. 6 shows the results of the Hole-driven MIT theory, cited in the theory 'physica C 460-462 (2007) 1076-1078'.
  • the carrier of the metal is electrons. If the carrier is a hole after the MIT occurs, the insulator is a hole insulator. In this case, when the electron is doped with the insulator, the MIT occurs due to the destruction of the coulomb energy from the insulator to the metal.
  • the basic structure of the t-switch is that the semiconductor region 10 of the insulator level or the insulator level doped with a very small concentration of electrons is disposed on one side of the hole-doped signal control semiconductor region 20. It has a bonded structure.
  • a semiconductor region (almost a metal level) 30 doped with a relatively large concentration of electrons is bonded to the other surface of the signal control semiconductor region 20.
  • the second semiconductor region 20 is bonded to the first semiconductor region 10 at the insulator level, and the other surface is bonded to the third semiconductor region 30 at the metal level.
  • the third semiconductor region 30 of the metal level corresponds to an inlet region
  • the first semiconductor region 10 of the insulator level is regarded as an outlet region.
  • the second doped hole The semiconductor region 20 corresponds to a control region.
  • the hole doping amount of the second semiconductor region 20 where the control terminal is formed is about n c ⁇ (0.25 / a o ) 3 (Mott NF 1990 Metal-insulator Transition (London: Taylor and Francis)). Where a o is the bore radius of the hydrogen atom. In general, n c ⁇ 1x 10 18 cm -3 .
  • the t-switch of the structure of FIG. 7 may be manufactured as follows.
  • the first semiconductor region 10 may be made of a high resistance n-type silicon single crystal wafer having a thickness of 0.3 mm.
  • the first semiconductor region 10 is doped with electrons having a low concentration ( ⁇ 1 ⁇ 10 15-16 cm ⁇ 3 ).
  • An Si thin film doped with holes of a mot reference n c ⁇ 1 ⁇ 10 18 cm ⁇ 3 may be formed as the second semiconductor region 20 on the first semiconductor region 10.
  • the thickness of the second semiconductor region 20 may be deposited to about 100 nm.
  • a third semiconductor region 30 used as an inlet layer is formed on the second semiconductor region 20.
  • the third semiconductor region 30 may be a Si thin film doped with electrons of about 1 ⁇ 10 19 cm ⁇ 3 .
  • the thickness of the Si thin film is about 200 nm, and may be formed through a known deposition method.
  • the thin film-wafer manufactured as described above may be etched by ion sputtering and patterned to a certain shape. Subsequently, a three-terminal device having an area of about 400 x 400 mm can be obtained by going through an electrode forming process and a series of post-fabrication processes.
  • the silicon single crystal wafer may be ground to a thickness of 150 nm to manufacture a thinner outlet layer.
  • the first, second, and third semiconductor regions 10, 20, and 30 may each be Si, SiC, GaN, VO 2 , V 2 O 3 , and a carbon-based material doped with electrons or holes. , Graphene).
  • each of the first, second, and third semiconductor regions 10, 20, and 30 may be a compound semiconductor including one of Group IV, Group III-V, and Group II-VI elements or a selective bond between the Group elements. It may be made of.
  • FIG. 8 is a graph showing an I-V characteristic curve of a t-switch according to FIG. 7.
  • the horizontal axis indicates voltage
  • the vertical axis indicates output current.
  • the current I IO flowing from the inlet region 30 to the outlet region 10 is shown while increasing the current in the control region 20.
  • the I IO current does not flow. This means that there is little leakage current.
  • the red line of Ohm's law which is a metal characteristic, does not coincide with the origin of IV after the jump, the outlet region 10 is assumed to be nonuniform.
  • FIG. 9 is a graph illustrating a switching characteristic curve of a t-switch according to FIG. 7.
  • the horizontal axis represents time and the vertical axis represents current.
  • a current of about 200 mA flows.
  • the amplification factor is not as high as 5, and no heat runaway appears in the semiconductor device through the heat gun.
  • the surface temperature of the t-switch was about 30-40 degrees.
  • the t-switch prepared as described above showed a lot of room for improvement, but showed experimental results suitable for the purpose of the present invention. This is the first observed MIT switching test in the world.
  • the voltage across the Inlet-Outlet terminals of the t-switch is 7V, which is very large compared to the transistor case.
  • the t-switch has the disadvantage of turning on and switching at a higher voltage VMIT than the transistor and generating Joule heat due to the large current flowing.
  • VMIT voltage
  • the thermal runaway phenomenon that occurs when the transistor heats up does not occur in the t-switch.
  • ESD noise signals flow large voltages and large currents in about 50 nanoseconds. Therefore, when the control current of the t-switch is controlled by the large voltage and current of the ESD, the jump of the metal current flowing from the I region to the O region is easily controlled.
  • the t-switch according to the present invention can effectively remove the ESD noise signal with little consumption of standby current. It is also resistant to thermal runaway, which ensures high reliability of the device.
  • the t-switch structure of FIG. 7 and the characteristics of FIGS. 8 and 9 are switches of a new operation not found in the transistor structure.
  • This t-switch is an improvement or application to the MoBRiK t-switch.
  • MoBRiK is the first letter of the name of the physicist who developed the MIT theory (Physica C 460-462 (2007) 1076-1078).
  • the t-switch differs from the IBM-developed Mort Transistor (Appl. Phys. Lett. 70 (1997) 598), which exhibits no discrete jumps, or field effect MIT 3-terminal devices ( Figure 11 of New Journal of Physics). 6 (2004) 52).
  • the t-switch of FIG. 7 is similar to the structure of a bipolar transistor, but the operation mechanism is completely different.
  • the collector corresponds to Outlet
  • the emitter corresponds to Inlet
  • the base corresponds to Control.
  • the collector corresponds to Inlet
  • the emitter corresponds to Outlet
  • the base corresponds to Control.
  • the t-switch structure of FIG. 7 has a difference in doping concentration of semiconductor regions connected to I, O, and C terminals compared to the bipolar transistor structure.
  • Bipolar transistors have different doping concentrations than t-switches. In the case of bipolar transistors, device breakdown and high heat generation can occur due to the uneven amount of doping in the Si material. Therefore, the device is easily broken and the reliability is lowered. Due to the above reasons, it is thought that the t-switch characteristic was not found in the bipolar transistor.
  • VIO voltage in Figure 9 is 7V. While the collector-emitter voltage of the transistor is below VCE ⁇ 1V, the voltage across the Inlet-Outlet terminals of the t-switch is 7V.
  • the input portion (collector at NPN, emitter at PNP) is low doped, and the output portion (emitter at NPN, collector at PNP) is high doped, and tunneling (without occurrence of MIT phenomenon) is performed.
  • the t-switch has a high doping of the input and a low doping so that the output is almost ignored, and the MIT phenomenon is used to operate the device. Therefore, the highly reliable t-switch can be obtained by elaborating the device of the structure of FIG.
  • the I, O, and C terminals 32, 12, and 22 may be aluminum electrodes that contact the corresponding semiconductor regions, respectively.
  • the stacked structure of a three-terminal device using the two-terminal device disclosed by the present inventors is a structure in which an MIT thin film is laminated on a lower electrode formed on an insulator substrate structure.
  • This is disclosed in Korean Patent No. 0859717 and PCT Patent WC2009027826-A2.
  • the structure of the prior art namely, the structure of the substrate / lower electrode thin film (Outlet) / MIT thin film (hole doped) / electrode thin film (Control) / MIT thin film (hole doped) / electrode thin film (Inlet) Have It is characterized by two layers of MIT thin film doped with about nc of mott hole.
  • the control layer doped about nc with the hole is placed between the Inlet layer and the Outlet layer, and the MIT layer where the MIT occurs at turn-on is the Control layer and the Outlet layer (almost an insulator). Levels of single crystals). From a structural point of view, it may appear that there is an additional MIT layer between the Control-Inlets with holes, but only one MIT layer exists. That is, since the control layer and the inlet layer have some amount of doping, MIT does not occur at the interface between them.
  • the three-terminal element of the present invention is a structure considered to have one MIT layer.
  • the outlet layer uses a very thin wafer single crystal layer rather than a thin film, which makes the device robust and thermally durable.
  • the control layer and the inlet layer are thin film layers. This is also a difference from the above prior art.
  • FIG. 10A is a diagram illustrating a case in which a t-switch according to FIG. 7 is installed in a circuit.
  • the t-switch 100 which is a metal-insulator transition three terminal type switch element, is connected between a power line and a ground line.
  • the control terminal is connected to the power line through the resistor (R).
  • a resistor may be further installed between the control terminal of the t-switch and the power line.
  • the resistor R may vary according to the allowable degree of the standby current or the strength of the noise signal.
  • FIG. 10B is a table illustrating standby current dependence of control resistance in the t-switch according to FIG. 7.
  • the table shows the control resistance dependence of the quiescent current when 5V is applied between Inlet and Outlet.
  • FIG. 11 is a circuit diagram illustrating a case in which a t-switch according to FIG. 7 is connected in series.
  • R LOAD can mean the composite resistance of the electrical and electronic system to be protected.
  • the control terminals C1, C2, C3, and Cn of each t-switch 100-1, 100-2, 100-3, 100-n each have the power through corresponding resistors R1, R2, R3, and Rn. You can see that it is connected to the line.
  • FIG. 12 is a circuit diagram illustrating a case in which a t-switch according to FIG. 7 is connected in a matrix form.
  • R LOAD can refer to the combined resistance of the electrical and electronic system to be protected. If the t-switch is connected in the form of a matrix of M x N (where M and N are more than one natural numbers), then the total composite resistance becomes one t-switch resistance. However, as a whole, it is possible to eliminate a large voltage in series and a large current in ESD noise signal. T-switches connected in series and in parallel can be packaged in one package, either through a protective or passivation layer, like an IC.
  • the series group switches 1000-1, 1000-2, and 1000-n correspond to the series switches of FIG. 11, respectively.
  • 13A to 13C are graphs showing various test results of the t-switch according to FIG. 7.
  • the horizontal axis represents time and the vertical axis represents voltage, respectively.
  • FIG. 13A shows the results of an ESD test using metal properties after a jump.
  • FIG. The test results of the control C terminal open at the t-switch of the present invention and measured with a 5kV ESD voltage are shown.
  • Figure 13b shows the test results measured at 5kV ESD voltage with 100kW across the C terminal. It shows that the ESD noise signal can be eliminated depending on the t-switch metal characteristics.

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

La présente invention concerne un procédé permettant la réalisation d'un interrupteur T, qui est un dispositif à trois bornes pour transition métal-isolant (MIT), basée sur la théorie de transition MIT par déplacement de trous et une technologie pour l'élimination d'un signal de bruit de décharge électrostatique, qui est une application technologique de l'interrupteur T. L'interrupteur T comporte trois bornes constituées par des bornes d'entrée, de sortie, et de commande. La transition MIT (transition métal isolant, transition discontinue) se produit dans une couche de sortie par la circulation de courant dans les bornes de commande. Une résistance élevée de l'interrupteur T est connectée à la borne de commande de sorte qu'un signal de décharge électrostatique de courant élevé et de haute tension circule dans les terminaux entrée-sortie sans endommager le dispositif.
PCT/KR2012/008886 2011-10-31 2012-10-26 Dispositif à trois bornes pour transition métal-isolant, système électrique et électronique comportant un tel dispositif, et procédé pour l'élimination de signaux de bruit électrostatique Ceased WO2013066006A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/355,384 US9595673B2 (en) 2011-10-31 2012-10-26 Method for removing electro-static discharge (EDS) noise signal in electronic system including the metal-insulator transition (MIT) 3-terminal device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20110112087 2011-10-31
KR10-2011-0112087 2011-10-31
KR10-2012-0073002 2012-07-04
KR1020120073002A KR101834904B1 (ko) 2011-10-31 2012-07-04 금속-절연체 전이 3 단자 소자와 그를 구비한 전기 전자 시스템 및 그에 따른 정전기 잡음 신호 제거 방법

Publications (1)

Publication Number Publication Date
WO2013066006A1 true WO2013066006A1 (fr) 2013-05-10

Family

ID=48192309

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/008886 Ceased WO2013066006A1 (fr) 2011-10-31 2012-10-26 Dispositif à trois bornes pour transition métal-isolant, système électrique et électronique comportant un tel dispositif, et procédé pour l'élimination de signaux de bruit électrostatique

Country Status (1)

Country Link
WO (1) WO2013066006A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030024156A (ko) * 2001-09-17 2003-03-26 한국전자통신연구원 급격한 금속-절연체 상전이를 이용한 전계 효과 트랜지스터
KR20070014928A (ko) * 2005-07-29 2007-02-01 한국전자통신연구원 급격한 ｍｉｔ 소자, 그 소자를 이용한 고전압 잡음제거회로 및 그 제거회로를 포함한 전기전자시스템
KR100701159B1 (ko) * 2006-02-01 2007-03-28 한국전자통신연구원 병렬 전도층 구조를 갖는 금속-절연체 전이 소자
KR20090013657A (ko) * 2007-08-02 2009-02-05 한국전자통신연구원 Ｇｅ기반 금속-절연체 전이(ＭＩＴ) 박막, 그 ＭＩＴ박막을 포함하는 ＭＩＴ 소자 및 그 ＭＩＴ 소자 제조방법
KR20100033906A (ko) * 2008-09-22 2010-03-31 한국전자통신연구원 태양전지용 광-유기 ｍｉｔ 물질 복합체, 그 ｍｉｔ 물질 복합체를 포함한 태양전지 및 태양전지모듈

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030024156A (ko) * 2001-09-17 2003-03-26 한국전자통신연구원 급격한 금속-절연체 상전이를 이용한 전계 효과 트랜지스터
KR20070014928A (ko) * 2005-07-29 2007-02-01 한국전자통신연구원 급격한 ｍｉｔ 소자, 그 소자를 이용한 고전압 잡음제거회로 및 그 제거회로를 포함한 전기전자시스템
KR100701159B1 (ko) * 2006-02-01 2007-03-28 한국전자통신연구원 병렬 전도층 구조를 갖는 금속-절연체 전이 소자
KR20090013657A (ko) * 2007-08-02 2009-02-05 한국전자통신연구원 Ｇｅ기반 금속-절연체 전이(ＭＩＴ) 박막, 그 ＭＩＴ박막을 포함하는 ＭＩＴ 소자 및 그 ＭＩＴ 소자 제조방법
KR20100033906A (ko) * 2008-09-22 2010-03-31 한국전자통신연구원 태양전지용 광-유기 ｍｉｔ 물질 복합체, 그 ｍｉｔ 물질 복합체를 포함한 태양전지 및 태양전지모듈

Similar Documents

Publication Publication Date Title
KR101784061B1 (ko) 과도 전압 보호 회로 및 디바이스
KR101834904B1 (ko) 금속-절연체 전이 3 단자 소자와 그를 구비한 전기 전자 시스템 및 그에 따른 정전기 잡음 신호 제거 방법
TWI469308B (zh) 電源箝制靜電放電防護電路
WO2020063109A1 (fr) Circuit de protection contre les esd
TW477055B (en) Improved ESD diode structure
WO2009107948A2 (fr) Circuit pour prévenir l'autp-échauffement d'un dispositif de transition métal-isolant( mit) et procédé de fabrication de dispositif intégré pour ledit circuit
US20080142900A1 (en) Abrupt metal-insulator transition device, circuit for removing high-voltage noise using the abrupt metal-insulator transition device, and electrical and/or electronic system comprising the circuit
WO2017071378A1 (fr) Structure de tension de résistance pour dispositif semi-conducteur
CN109599387B (zh) 静电放电保护电路及其结构和工作方法
TW201007927A (en) An electrostatic discharge protection circuit, equipment and method
TW201242010A (en) Electrostatic discharge protection device and electrostatic discharge protection circuit thereof
CN106098684B (zh) 一种静电防护电路
JP2576433B2 (ja) 半導体装置用保護回路
US7969697B2 (en) Low-voltage CMOS space-efficient 15 KV ESD protection for common-mode high-voltage receivers
TWI325630B (en) Circuit systems, semiconductor structures and integrated circuits
WO2013066006A1 (fr) Dispositif à trois bornes pour transition métal-isolant, système électrique et électronique comportant un tel dispositif, et procédé pour l'élimination de signaux de bruit électrostatique
CN104716135A (zh) 静电保护电路
CN1212670C (zh) 具有防护环控制电路的硅控整流器
US20080197916A1 (en) Low-Voltage Noise Preventing Circuit Using Abrupt Metal-Insulator Transition Device
WO2015046766A1 (fr) Électrode transparente et son procédé de fabrication
JP2014135320A (ja) 半導体装置
US20100219448A1 (en) Semiconductor device and semiconductor integrated circuit device for driving plasma display using the semiconductor device
WO2018174514A1 (fr) Élément de mémoire non volatile ayant des caractéristiques de résistance et de mémoire de capacité à plusieurs niveaux et son procédé de fabrication
WO2013172511A1 (fr) Procédé de formation d'une électrode transparente et dispositif à semi-conducteurs fabriqué par ce procédé
Zambou et al. Switching alternating current (AC) using a fully screen‐printed current‐driven transistor

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12844862

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 14355384

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 12844862

Country of ref document: EP

Kind code of ref document: A1