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WO2012120973A1 - Procédé et appareil d'inspection de défauts et procédé de fabrication d'un substrat - Google Patents

Procédé et appareil d'inspection de défauts et procédé de fabrication d'un substrat Download PDF

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Publication number
WO2012120973A1
WO2012120973A1 PCT/JP2012/053180 JP2012053180W WO2012120973A1 WO 2012120973 A1 WO2012120973 A1 WO 2012120973A1 JP 2012053180 W JP2012053180 W JP 2012053180W WO 2012120973 A1 WO2012120973 A1 WO 2012120973A1
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WO
WIPO (PCT)
Prior art keywords
defective
defect
infrared camera
substrate
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2012/053180
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English (en)
Japanese (ja)
Inventor
正和 柳瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to CN201280009272.7A priority Critical patent/CN103380366B/zh
Priority to JP2013503430A priority patent/JP5628410B2/ja
Publication of WO2012120973A1 publication Critical patent/WO2012120973A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/20—Investigating the presence of flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/72—Investigating presence of flaws
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N2021/9513—Liquid crystal panels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/309—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of printed or hybrid circuits or circuit substrates
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2360/00—Aspects of the architecture of display systems
    • G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
    • G09G2360/145—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light originating from the display screen
    • G09G2360/147—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light originating from the display screen the originated light output being determined for each pixel

Definitions

  • the present invention relates to a wiring defect inspection method and a defect inspection apparatus suitable for detecting defects in a wiring board on which a large number of wirings such as a liquid crystal panel and a solar battery panel are formed.
  • a manufacturing process of a liquid crystal panel is roughly divided into an array (TFT) process, a cell (liquid crystal) process, and a module process.
  • TFT array
  • a gate electrode, a semiconductor film, a source / drain electrode, a protective film, and a transparent electrode are formed on a transparent substrate, and then an array inspection is performed to short-circuit or break a wiring such as an electrode or a wiring. Etc. are inspected for defects.
  • an inspection method for specifying the position of a defect there is a visual inspection in which an operator observes and specifies a substrate with a microscope.
  • this inspection method places a heavy burden on the operator, and it is difficult to determine a defect visually.
  • the position of the defect was wrong.
  • an infrared inspection has been proposed in which a substrate is photographed with an infrared camera, image processing is performed, and a defect position is automatically specified.
  • Patent Document 1 relates to an infrared inspection. As shown in FIG. 6, a conventional electrical inspection is performed with one terminal of each of a scanning line 61 and a signal line 62 of a thin film transistor substrate being electrically connected. After conducting a continuity test in the same manner as the method, a short-circuited pixel address is specified for a substrate determined to be defective by the continuity test.
  • a potential difference is applied between the scanning line 61 and the signal line 62, heat generation due to the current flowing in the scanning line 61 and the signal line 62 where the short-circuit occurs is detected, and the short-circuit position 63 is specified.
  • an infrared microscope 65 is used according to the intensity of infrared light emitted from a heat generating portion of a minute region of about 10 to 30 ⁇ m, and the terminal portions of the scanning line 61 and the signal line 62 are scanned along the broken line 66. Then, the wiring that generates heat is detected.
  • the short-circuit position 63 is specified as the short-circuit position 63 or the short-circuit candidate region 63 in which a short-circuit defect may occur.
  • the short-circuit candidate region 63 sequentially positions the wiring pattern of the short-circuit pixel address within the field of view of the infrared microscope 65, detects the infrared image, and identifies the short-circuit position 63 from the intensity.
  • the short circuit position 63 is specified by these, and a short circuit is corrected by wiring correction methods, such as a laser 67. FIG.
  • Japanese Patent Publication Japanese Patent Laid-Open No. 4-72552 (Publication Date: March 6, 1992)”
  • the conventional infrared inspection has the following problems.
  • the infrared image detector 65 detects the infrared light intensity in a minute region, and in order to detect the heat generating part, the scanning line 61 and the signal line 62 on the substrate. Had to scan. Therefore, there is a problem that the longer the inspection area is, such as a large liquid crystal panel or a mother substrate on which a plurality of liquid crystal panels are formed, the longer the time required for infrared inspection and the lower the throughput.
  • the present invention has been made to solve the above-described problems, and the object of the present invention is to provide a wiring that can identify a defective portion in a short time by effectively combining resistance inspection and infrared inspection. It is to provide a defect inspection method and a defect inspection apparatus.
  • a defect inspection method for detecting a defect position from a mother substrate on which a plurality of wiring boards are formed including a defective substrate having a defective portion or a defective portion by performing a resistance inspection on each of the plurality of wiring boards.
  • another defect inspection method is a defect inspection method for detecting a defect position of a wiring from a mother substrate on which a plurality of wiring boards are formed, and each of the plurality of wiring boards has a resistance.
  • a step of detecting a defective substrate having a defective portion or a defective block including the defective portion by inspecting, a step of applying a voltage to the defective substrate or the defective block, and heating the defective portion; and the defect A step of photographing the defective substrate or the defect block that has generated heat with a first infrared camera, and a step of measuring the position of the defective portion from an image photographed by the first infrared camera. It is characterized by.
  • a method for manufacturing a substrate comprising: forming a mother substrate on which a plurality of wiring substrates are formed by forming at least one of a gate electrode, a source electrode, and a drain electrode on the substrate; A substrate forming step to form, a step of detecting a defective substrate having a defective portion or a defective block including the defective portion by performing resistance inspection on each of the plurality of wiring substrates, and a voltage applied to the defective substrate or the defective block , The step of causing the defect portion to generate heat, the step of photographing the defect substrate or the defect block where the defect portion generates heat with a first infrared camera, and the image photographed with the first infrared camera And macro-measuring the position of the defective portion.
  • the defect inspection apparatus is a defect inspection apparatus for detecting a defect position from a mother board on which a plurality of wiring boards are formed, and each of the plurality of wiring boards is subjected to resistance inspection.
  • a voltage application unit that applies a voltage to a defective substrate or defect block that has been found to have a defect by resistance inspection by the resistance measurement unit; and the defective substrate or the defect block to which a voltage is applied by the voltage application unit
  • FIG. 1 is a block diagram illustrating the configuration of the defect inspection apparatus 100 according to the first embodiment.
  • a defect inspection apparatus 100 according to the first embodiment inspects defects such as wiring in a plurality of liquid crystal panels 2 formed on a mother substrate 1.
  • a probe 3 for conducting the liquid crystal panel 2 and a probe 3 are connected to the defect inspection apparatus 100 according to the first embodiment.
  • Probe moving means 4 for moving on each liquid crystal panel 2, infrared camera 5 for acquiring an infrared image, camera moving means 6 for moving the infrared camera 5 on the liquid crystal panel 2, and probe moving means 4 And a main control section 7 for controlling the camera moving means 6.
  • the probe 3 is connected to a resistance measuring unit 8 for measuring the resistance between the wirings of the liquid crystal panel 2 and a voltage applying unit 9 for applying a voltage between the wirings of the liquid crystal panel 2.
  • the measurement unit 8 and the voltage application unit 9 are controlled by the main control unit 7.
  • the main control unit 7 is connected to a data storage unit 10 that stores resistance values between wirings and image data.
  • FIG. 2 is a perspective view illustrating a configuration of the defect inspection apparatus 100 according to the first embodiment.
  • an alignment stage 11 is installed on a base, and the mother substrate 1 is placed on the alignment stage 11, and the position is adjusted in parallel with the XY coordinate axes of the probe moving means 4 and the camera moving means 6.
  • an optical camera 12 for confirming the position of the mother substrate 1 is disposed above the alignment stage 11.
  • the probe moving means 4 is slidably installed on a guide rail 13 a disposed outside the alignment stage 11.
  • Guide rails 13b and 13c are also provided on the main body side of the probe moving means 4 so that the mount portion 14a can be moved along the guide rails 13 in the XYZ coordinate directions.
  • a probe 3 corresponding to the liquid crystal panel 2 is mounted on the mount portion 14a.
  • the camera moving means 6 is slidably installed on a guide rail 13d arranged outside the probe moving means 4.
  • the main body of the camera moving means 6 is also provided with guide rails 13e, 13f, and the three mount portions 14b, 14c, 14d can be moved separately along the guide rails 13 in the XYZ coordinate directions. It is like that.
  • the mounting parts 14b and 14c are equipped with a measurement camera for measuring the defective part.
  • the first infrared camera 5a for macro measurement and the second infrared camera 5b for micro measurement are mounted, and the optical camera 16 is mounted on the mount portion 14d.
  • the infrared camera 5a is an infrared camera for macro measurement whose field of view is expanded to about 520 ⁇ 405 mm.
  • the infrared camera 5a is configured by combining, for example, four infrared cameras in order to widen the field of view.
  • the infrared camera 5b is an infrared camera for micro-measurement that has a small field of view of about 32 ⁇ 24 mm but can perform high-resolution imaging.
  • the camera moving means 5 may be equipped with a laser irradiation device for correcting a defective part by adding a mount portion 14.
  • a laser irradiation device for correcting a defective part by adding a mount portion 14.
  • the probe moving means 4 and the camera moving means 6 are installed on separate guide rails 13a and 13d, the probe moving means 4 and the camera moving means 6 can move in the X coordinate direction without interference with each other. Therefore, the infrared cameras 5a and 5b and the optical camera 16 can be further moved on the liquid crystal panel 2 in a state where the probe 3 is in contact with the liquid crystal panel 2.
  • FIG. 3A is a plan view of the liquid crystal panel 2 formed on the mother substrate 1.
  • the liquid crystal panel 2 includes a pixel portion 17 in which a TFT is formed at each intersection where a scanning line and a signal line intersect, and a driving circuit portion 18 that drives the scanning line and the signal line, respectively.
  • Terminal portions 19 a to 19 d are provided at the edge of the liquid crystal panel 2, and the terminal portions 19 a to 19 d are connected to the wirings of the pixel portion 17 and the drive circuit portion 18.
  • the liquid crystal panel 2 is manufactured by forming a gate electrode, a semiconductor film, a source electrode, a drain electrode, a protective film, and a transparent electrode on a transparent substrate.
  • FIG. 3B is a plan view of the probe 3 for conducting with the terminal portions 19a to 19d provided on the liquid crystal panel 2.
  • the probe 3 has a frame shape that is substantially the same size as the liquid crystal panel 2, and includes a plurality of probe needles 21a to 21d corresponding to the terminal portions 19a to 19d.
  • the plurality of probe needles 21a to 21d can individually connect one probe needle 21 to the resistance measuring unit 8 and the voltage applying unit 9 via a switching relay (not shown). Therefore, the probe 3 can selectively connect a plurality of wirings connected to the terminal portions 19a to 19d, or can connect a plurality of wirings together.
  • the probe 3 since the probe 3 has a frame shape that is almost the same size as the liquid crystal panel 2, when the positions of the terminal portions 19a to 19d and the probe needles 21a to 21d are aligned, Can be confirmed by the optical camera 16.
  • the defect inspection apparatus 100 includes the probe 3 and the resistance measurement unit 8 connected to the probe 3.
  • the probe 3 is electrically connected to the liquid crystal panel 2, and the resistance of each wiring is connected. Value, resistance value between adjacent wirings, and the like can be measured.
  • the defect inspection apparatus 100 includes a probe 3, a voltage application unit 9 connected to the probe 3, and infrared cameras 5 a and 5 b, and wiring of the liquid crystal panel 2 through the probe 3. Further, the heat generated by applying a voltage between the wirings and causing a current to flow through the defective part can be measured by the infrared cameras 5a and 5b, and the position of the defective part can be specified.
  • a single inspection apparatus can be used for both resistance inspection and infrared inspection.
  • FIG. 4 is a flowchart of a defect inspection method using the defect inspection apparatus 100 according to the first embodiment.
  • defect inspection is sequentially performed on the plurality of liquid crystal panels 2 formed on the mother substrate 1 through steps S ⁇ b> 1 to S ⁇ b> 10.
  • step S1 the mother substrate 1 is placed on the alignment stage 11 of the defect inspection apparatus 100, and the position of the substrate is adjusted to be parallel to the XY coordinate axes.
  • step S2 the probe 2 is moved to the upper part of the liquid crystal panel 2 to be inspected by the probe moving means 9, and the probe needles 21a to 21d are brought into contact with the terminal portions 19a to 19d of the liquid crystal panel 2.
  • step S3 corresponding to the various defect modes, wiring for resistance inspection and between wirings are selected, and the probe needle 21 to be conducted is switched.
  • step S4 resistance inspection is performed, the resistance value between the selected wirings and wirings is measured, and the presence or absence of a defect is inspected by comparison with a normal resistance value.
  • FIG. 5 schematically shows the positions of defects generated in the pixel portion 17 as an example.
  • FIG. 5A shows a defect 23 that is short-circuited at a position where the wiring X and the wiring Y intersect vertically, such as a scanning line and a signal line.
  • a defect 23 is caused by switching the probe needle 19 to be conducted to 19a and 19d or 19b and 19c shown in FIG. 3, and the wiring X1 to X10 and the wiring Y1 to Y10 have a one-to-one resistance value between the wirings.
  • By measuring the presence or absence and position of a short circuit can be specified.
  • FIG. 5B shows a defect 23 short-circuited between adjacent wirings X, such as a scanning line and an auxiliary capacitance line.
  • a defect 23 is obtained by switching the probe needle 19 to be conducted between the odd number 19b and the even number 19d, and measuring the resistance value between the adjacent wires X1 to X10, thereby connecting the shorted wire. Can be identified.
  • FIG. 5C shows a defect 23 short-circuited between adjacent wirings Y, such as a signal line and an auxiliary capacitance line.
  • a defect 23 is obtained by switching the probe needle 19 to be switched between the odd number 19a and the even number 19c, and measuring the resistance value between the adjacent wires Y1 to Y10, thereby connecting the shorted wire. Can be identified.
  • step S5 it is determined whether or not to perform infrared inspection based on the presence and state of the defect 23. If there is a defect 23, the infrared inspection in step 6 is performed, and if there is no defect 23, the infrared inspection is not performed.
  • step 9 For example, as shown in FIG. 5A, when the short circuit 23 occurs at the intersection of the wiring X and the wiring Y, an abnormality is detected in the wiring X4 and the wiring Y4 by the resistance inspection between the wirings. However, when a short circuit 23 occurs between adjacent wirings as shown in FIGS.
  • a pair of wirings for example, between the wiring X3 and the wiring X4
  • the short circuit position by infrared inspection because the position of the short circuit cannot be specified in the length direction of the wiring.
  • step S6 infrared inspection is performed.
  • the range of infrared inspection is narrowed down to the defect block 24.
  • the defect block 24 is set so that the defective wiring and the periphery thereof are within the field of view of the infrared camera.
  • Step 7 sets a voltage value to be applied to the wiring in the defective block 24.
  • the voltage value applied to the wiring is adjusted by the voltage application unit 10, and a voltage of about several tens of volts is normally applied.
  • Step 8 is to detect the infrared light emitted from the defect portion 23 by photographing the defect block 24 that has generated heat due to the current flowing through the defect portion with the infrared camera 5.
  • the first infrared camera 5a for macro measurement that can fit the entire defect block 24 within the field of view is used. For this reason, the whole defect block 24 can be measured without scanning the infrared camera 5a, and the time for infrared inspection can be shortened.
  • the defect position is specified from the positional relationship between the defective portion 23 and the wiring, and is stored in the data storage unit 10.
  • the resistance value of the defect portion 23 is often larger than that of the wiring, and the heat generation is concentrated on the defect portion 23 and looks like a dot. Therefore, the defect position can be easily identified in the thermal image.
  • the periphery of the heat generating part may be measured in detail with the second infrared camera 5b for micro measurement. Since the position of the heat generating portion is specified by the first infrared camera 5a for macro measurement, the second infrared camera 5b for micro measurement can be directly aligned with the heat generating portion, and the defect portion 23 More detailed measurement can be performed in a short time with respect to information such as a shape necessary for correction of the image.
  • step 9 it is determined whether or not all inspections in various defect modes have been completed for the liquid crystal panel 2 being inspected. If there is an uninspected defect mode, the process returns to step S3, and the probe 3 is adjusted to the next defect mode. The connection is switched and the defect inspection is repeated.
  • step 10 it is determined whether the defect inspection of all the liquid crystal panels 2 has been completed for the mother substrate 1 being inspected. If there are any uninspected liquid crystal panels 2, the process returns to step S1 to determine whether the next inspection target The probe is moved to the liquid crystal panel 2 and the defect inspection is repeated.
  • the presence / absence of a defect is determined by resistance inspection, and the range of infrared inspection is narrowed down to the defect block 24 including the defective portion so as to be within the field of view of the infrared camera.
  • the infrared camera 5 does not need to be scanned over the entire substrate, and the time for infrared inspection can be shortened.
  • the first infrared camera 5a for macro measurement and the second infrared camera 5b for micro measurement are performed in two stages, whereby the first infrared camera 5a for macro measurement is used.
  • the position of the heat generating part is specified, and the second infrared camera 5b for micro measurement can be directly adjusted to the position of the heat generating part without scanning the entire substrate, and detailed measurement of the defective part can be performed in a short time. It can be carried out.
  • the resistance value measured by another resistance inspection apparatus may be used in the defect inspection method of the present invention to narrow down defect blocks to be subjected to infrared inspection.

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
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  • Analytical Chemistry (AREA)
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Liquid Crystal (AREA)

Abstract

La présente invention concerne, dans un mode de réalisation, un procédé d'inspection de défauts capable de détecter la position d'un défaut sur un substrat de base sur lequel une pluralité de substrats de câblage est formée. Le procédé comprend les étapes suivantes : la détection d'un substrat défectueux, comportant une partie défectueuse, ou d'un bloc défectueux incluant la partie défectueuse, en effectuant une vérification de résistance sur chaque substrat de câblage ; l'application d'une tension au substrat défectueux ou au bloc défectueux pour que la partie défectueuse génère de la chaleur ; la prise d'une photographie, au moyen d'un premier appareil photo infrarouge, du substrat défectueux ou du bloc défectueux où la partie défectueuse a généré de la chaleur ; et la mesure de la position de la partie défectueuse au moyen d'une mesure macroscopique, à partir de l'image photographiée au moyen du premier appareil photo infrarouge.
PCT/JP2012/053180 2011-03-09 2012-02-10 Procédé et appareil d'inspection de défauts et procédé de fabrication d'un substrat Ceased WO2012120973A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201280009272.7A CN103380366B (zh) 2011-03-09 2012-02-10 缺陷检查方法、缺陷检查装置以及基板的制造方法
JP2013503430A JP5628410B2 (ja) 2011-03-09 2012-02-10 欠陥検査方法、欠陥検査装置、及び基板の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-051123 2011-03-09
JP2011051123 2011-03-09

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CN105158678A (zh) * 2015-10-23 2015-12-16 湖北三江航天万峰科技发展有限公司 一种印制电路板短路故障点快速检测装置
JP6871070B2 (ja) 2017-06-06 2021-05-12 浜松ホトニクス株式会社 半導体デバイス検査方法
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CN111458353B (zh) * 2020-05-29 2023-03-10 无锡和博永新科技有限公司 一种电阻基板正反检测方法
CN113469293B (zh) * 2021-09-02 2021-11-09 成都数联云算科技有限公司 面板阵列短路检测方法、装置、电子设备及存储介质

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