[go: up one dir, main page]

WO2012037733A1 - 一种场发射阳极板、场发射光源及其制备方法 - Google Patents

一种场发射阳极板、场发射光源及其制备方法 Download PDF

Info

Publication number
WO2012037733A1
WO2012037733A1 PCT/CN2010/077312 CN2010077312W WO2012037733A1 WO 2012037733 A1 WO2012037733 A1 WO 2012037733A1 CN 2010077312 W CN2010077312 W CN 2010077312W WO 2012037733 A1 WO2012037733 A1 WO 2012037733A1
Authority
WO
WIPO (PCT)
Prior art keywords
field emission
conductive layer
cathode
plate
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2010/077312
Other languages
English (en)
French (fr)
Inventor
周明杰
马文波
李清涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oceans King Lighting Science and Technology Co Ltd
Original Assignee
Oceans King Lighting Science and Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oceans King Lighting Science and Technology Co Ltd filed Critical Oceans King Lighting Science and Technology Co Ltd
Priority to CN2010800680999A priority Critical patent/CN103003910A/zh
Priority to US13/822,187 priority patent/US20130175918A1/en
Priority to EP10857447.6A priority patent/EP2620972A4/en
Priority to JP2013526297A priority patent/JP5648127B2/ja
Priority to PCT/CN2010/077312 priority patent/WO2012037733A1/zh
Publication of WO2012037733A1 publication Critical patent/WO2012037733A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/54—Screens on or from which an image or pattern is formed, picked-up, converted, or stored; Luminescent coatings on vessels
    • H01J1/62—Luminescent screens; Selection of materials for luminescent coatings on vessels
    • H01J1/63—Luminescent screens; Selection of materials for luminescent coatings on vessels characterised by the luminescent material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/16—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
    • C04B37/005—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of glass or ceramic material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/025—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of glass or ceramic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7767—Chalcogenides
    • C09K11/7769—Oxides
    • C09K11/7771—Oxysulfides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/77742—Silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7784—Chalcogenides
    • C09K11/7787—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/36—Solid anodes; Solid auxiliary anodes for maintaining a discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/08—Electrodes intimately associated with a screen on or from which an image or pattern is formed, picked-up, converted or stored, e.g. backing-plates for storage tubes or collecting secondary electrons
    • H01J29/085—Anode plates, e.g. for screens of flat panel displays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/18—Luminescent screens
    • H01J29/20—Luminescent screens characterised by the luminescent material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/18—Luminescent screens
    • H01J29/28—Luminescent screens with protective, conductive or reflective layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/86—Vessels; Containers; Vacuum locks
    • H01J29/863—Vessels or containers characterised by the material thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J63/00—Cathode-ray or electron-stream lamps
    • H01J63/02—Details, e.g. electrode, gas filling, shape of vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J63/00—Cathode-ray or electron-stream lamps
    • H01J63/02—Details, e.g. electrode, gas filling, shape of vessel
    • H01J63/04—Vessels provided with luminescent coatings; Selection of materials for the coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J63/00—Cathode-ray or electron-stream lamps
    • H01J63/06—Lamps with luminescent screen excited by the ray or stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
    • H01J9/148—Manufacture of electrodes or electrode systems of non-emitting electrodes of electron emission flat panels, e.g. gate electrodes, focusing electrodes or anode electrodes
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/95—Products characterised by their size, e.g. microceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9646—Optical properties
    • C04B2235/9653—Translucent or transparent ceramics other than alumina
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/10—Glass interlayers, e.g. frit or flux
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/341—Silica or silicates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles

Definitions

  • the invention belongs to the technical field of electric light sources, and in particular relates to a field emission anode plate, a field emission light source and a preparation method thereof.
  • the electric light source industry has always been a hot topic in the world's countries, and it plays a very important role in the world economy.
  • the light source widely used at present is a gas discharge light source.
  • the principle of the light source is to charge the interior of the lamp to a mixed gas containing mercury, and to illuminate the phosphor by ultraviolet light generated by gas discharge luminescence or gas discharge.
  • the pulsed light flash of gas discharge light source is easy to cause human visual fatigue, and mercury pollution environment, with the advancement of society and science and technology, research and development of energy-saving and environmentally friendly green light source to replace traditional light source has become an important topic for countries to compete for research.
  • the field emission light source is one of the electric light sources. It is an emerging light source and has the advantages of high current density, low power consumption, fast response, etc. It has important application prospects in the field of vacuum electronics such as flat panel display, X-ray source and microwave amplifier.
  • the principle is that under the action of an electric field, an electron emitter such as a metal tip or a carbon nanotube at a low potential emits electrons, and bombards the phosphor at a high potential to emit visible light.
  • a sulfide, an oxide or a silicate phosphor is used as an anode luminescent material.
  • Oxide or silicate phosphors have relatively poor conductivity. Under electron beam bombardment, charge accumulation is likely to occur at the anode, causing a drop in potential difference between the two poles, which affects the luminous efficiency of the device.
  • the anode plate made of a conductive sulfide phosphor is prone to decomposition of sulfides under a long electron beam excitation, releasing gas, which not only reduces the vacuum of the device, but also "poisons" the cathode. This ultimately reduces the life of the device.
  • the powder may fall off under the electron beam bombardment, causing the cathode shielding of the device and the uneven illumination of the anode, which reduces the life of the device.
  • the object of the present invention is to overcome the above deficiencies of the prior art and to provide a field emission anode plate with good conductivity, high light transmittance and stable electron impact resistance;
  • the present invention also provides a method of preparing the above field emission light source.
  • a field emission anode plate comprising a transparent ceramic substrate having an anode conductive layer bonded to a surface of the transparent ceramic substrate, the transparent ceramic substrate emitting light under excitation of a cathode ray.
  • a field emission light source comprising a field emission anode plate, a field emission cathode plate and a support, the field emission anode plate being the member;
  • the field emission cathode plate comprising a substrate and the substrate a surface-bonded cathode conductive layer;
  • the anode conductive layer is disposed opposite to the cathode conductive layer, and the two ends of the support body are respectively sealedly connected to the field emission anode plate and the field emission cathode plate, and the support body and the field are respectively
  • the emitter anode plate and the field emission cathode plate form a vacuum chamber.
  • the field emission anode plate comprises a transparent ceramic substrate, the transparent ceramic substrate has an anode conductive layer bonded to a surface thereof, and the transparent ceramic substrate is at the cathode Illuminating under ray excitation;
  • the field emission cathode plate comprises a substrate and a cathode conductive layer bonded to the surface of the substrate;
  • An anode conductive layer of the field emission anode plate is disposed opposite to a cathode conductive layer of the field emission cathode plate, and two ends of the insulating support body are respectively connected to the field emission anode plate and the field emission cathode plate , the support body, the field emission anode plate and the field emission cathode plate form a cavity;
  • An exhaust port is disposed on the cavity, and a low-melting glass solder is coated on the joint of the insulating support, the field emission anode plate and the field emission cathode plate, and then heat sealed, and finally the cavity is A vacuum is applied to seal the exhaust port to obtain the field emission source.
  • the field emission anode plate of the invention adopts a transparent ceramic capable of emitting light under the excitation of a cathode ray as a substrate, and the transparent ceramic substrate effectively improves the light transmittance and electron impact resistance of the field emission anode plate, and enhances the stability performance of the anode plate. Corrosion resistance and wear resistance, at the same time, the field emission anode plate can be uniformly illuminated, and the cost is low; the field emission light source made of the field emission anode plate has high luminous intensity and uniform illumination, stable luminescence performance, corrosion resistance and wear resistance. The characteristic and long service life; the preparation method of the field emission light source is simple, the production efficiency is improved, the production cost is reduced, and the industrial production is suitable.
  • FIG. 1 is a schematic structural view of a field emission anode plate of the present invention
  • FIG. 2 is a schematic structural view of a field emission light source of the present invention
  • FIG. 3 is another schematic structural view of a field emission light source of the present invention.
  • FIG. 4 is a schematic flow chart of a method for preparing a field emission light source of the present invention.
  • the embodiment of the invention provides a field emission anode plate 1 with good conductivity, high light transmittance and stable electron impact resistance.
  • a field emission anode plate 1 As shown in FIG. 1, it includes a transparent ceramic substrate 10 on the surface of which an anode conductive layer 11 is bonded, which is illuminated by a cathode ray.
  • the field emission anode plate 1 is made of a transparent ceramic capable of emitting light under the excitation of a cathode ray, thereby effectively improving the light transmittance and electron impact resistance of the field emission anode plate 1, and the transparent ceramic substrate enhances the anode.
  • the plate 1 has stable performance, corrosion resistance and wear resistance, so that the field emission anode plate 1 can uniformly emit light and has low cost.
  • the material of the transparent ceramic substrate 10 in the above embodiment is preferably Y 2 O 3 :Eu transparent ceramic, Y 2 O 2 S:Eu transparent ceramic, Y 2 SiO 5 :Tb transparent ceramic, Gd 2 O 2 S: Tb
  • Y 2 O 3 :Eu transparent ceramic preferably Y 2 O 3 :Eu transparent ceramic
  • Y 2 O 2 S Eu transparent ceramic
  • Gd 2 O 2 S Tb
  • One of transparent ceramics, LaAlO 3 :Tm transparent ceramics, and LaGaO 3 :Tm transparent ceramics have high transparency and stability, strong electron impact resistance, and good corrosion resistance and wear resistance.
  • the thickness of the transparent ceramic substrate 10 of the present embodiment is preferably 0.5-30 mm, and the transparent ceramic substrate 10 of the thickness can effectively enhance the compressive and mechanical resistance thereof, and the compressive and mechanical resistance thereof increases as the thickness thereof increases. The ability will also increase with the increase, but the thickness is not too thick, too thick transparent ceramic substrate 10 will affect its appearance, increase its weight, increase its economic cost of production.
  • the thickness of the anode conductive layer 11 is preferably 10 nm to 300 ⁇ m, and the material thereof is preferably aluminum metal, silver, magnesium, copper or gold. The thickness of the anode conductive layer 11 determines the efficiency of electron penetration and also determines the sheet resistance of the conductive layer. That is, the luminous efficiency of the field emission light source is determined.
  • Embodiments of the present invention also provide a field emission light source made of the field emission anode plate 1 described above.
  • the field emission light source comprises a field emission anode plate 1, a field emission cathode plate 2 and a support body 3; the field emission anode plate 1 comprises a transparent ceramic substrate 10, and an anode conductive is combined on one surface thereof.
  • the transparent ceramic substrate 10 emits light under the excitation of a cathode ray;
  • the field emission cathode plate 2 comprises a substrate 20 and a cathode conductive layer 21 combined with the substrate 20; the two ends of the support body 3 are respectively associated with the field emission anode plate 1
  • the field emission cathode plate 2 is sealingly connected, and a vacuum chamber 4 is formed by the support body 3, the field emission anode plate 1 and the field emission cathode plate 2, and the anode conductive layer 11 of the field emission anode plate 1 and the field emission cathode plate 2 are
  • the cathode conductive layers 21 are oppositely disposed.
  • the outer surface of the anode conductive layer 11 and the outer surface of the cathode conductive layer 21 are both in the vacuum chamber 4, and the field emission light source comprises the above-mentioned emitter anode plate 1 so that the light-emitting intensity is high and the light is uniform, and the light-emitting property is stable. It has corrosion and wear resistance and long service life.
  • the spacing between the field emission anode plate 1 and the field emission cathode plate 2 is preferably 200 ⁇ m. -3cm.
  • the spacing of the range can effectively ensure that electrons penetrate the anode conductive layer 11 in the anode plate 1 to improve the luminous efficiency of the field emission source.
  • the substrate 20 of the field emission cathode plate 2 includes a planar body 201 disposed opposite to the anode conductive layer 11 and the cathode body 201 is bonded to the cathode conductive layer 21, and the substrate is 20 degrees.
  • the thickness is preferably from 0.5 to 30 mm.
  • the substrate 20 ensures the field emission cathode plate 2 to withstand compression and mechanical strength, and provides a support body for the cathode conductive layer 21.
  • the cathode conductive layer 21 of the field emission cathode plate 2 includes a conductive layer 210 bonded to the planar body 201, and a cathode layer 211 bonded to the outer surface of the conductive layer 210.
  • the conductive layer 210 is mainly electrically conductive, and its resistance is preferably greater than 0 ohms and less than or equal to 7 ohms; the cathode layer 211 functions as an electron emitter to provide a stable flow of electrons toward the anode conductive layer 11.
  • the substrate 20 may also be provided with a plurality of planar bodies; the two ends of the support body 3 are respectively sealed with the field emission anode plate 1 and the field emission cathode plate 2 in the following manners:
  • the first way as shown in Fig. 2, the two ends of the support body 3 are respectively sealedly connected with the outer surface of the transparent ceramic substrate 10 of the field emission anode plate 1 and the outer surface of the substrate 20 of the field emission cathode plate 2, and the anode conductive layer 11 and the cathode are electrically conductive.
  • the layers 21 are all within the vacuum chamber 4.
  • This method is a preferred embodiment of the present embodiment, and can simultaneously reduce the production cost and enhance the safety performance of the field emission light source and reduce the production cost while achieving the function of the field emission cathode plate 2 equally.
  • the third mode (not shown): the two ends of the support body 3 are respectively sealedly connected to the outer surface of the transparent ceramic substrate 10 of the field emission anode plate 1 and the outer surface of the cathode conductive layer 21 of the field emission cathode plate 2, and the anode conductive layer 11 and The cathode layers 211 are all in the vacuum chamber 4; or the two ends of the support body 3 are respectively sealedly connected to the outer surface of the anode conductive layer 11 of the field emission anode plate 1 and the outer surface of the substrate 20 of the field emission cathode plate 2, and the cathode conductive layer 21 It is in the vacuum chamber 4.
  • the conductive layer 210 is preferably one of an indium tin oxide layer, a silver layer, a metal aluminum layer, a gold layer or a chromium layer, and the thickness thereof is preferably 100.
  • Um-250 nm; the cathode layer 211 is preferably one of a carbon nanotube layer, a zinc oxide nanowire layer or a copper oxide nanowire layer, and has a thickness of preferably 0.5 to 30 um.
  • the embodiment of the present invention further provides a method for preparing the field emission light source.
  • the process flow chart of the method is shown in FIG. 4, and the method includes the following steps:
  • a field emission anode plate 1 (see FIG. 1), a field emission cathode plate 2, and an insulating support 3 (see FIG. 2) are obtained;
  • the field emission anode plate 1 includes a transparent ceramic substrate 10 and an anode bonded to the surface of the transparent ceramic substrate 10.
  • a conductive layer 11 the transparent ceramic substrate emits light under the excitation of a cathode ray;
  • the field emission cathode plate 2 comprises a substrate 20 and a cathode conductive layer 21 bonded to the surface of the substrate 20;
  • the anode conductive layer 11 of the field emission anode plate 1 is disposed opposite to the cathode conductive layer 21 of the field emission cathode plate 2, and the two ends of the insulating support body 3 are respectively connected to the field emission anode plate 1 and the field emission cathode plate 2, so that the support Body 3, field emission anode plate 1 and field emission cathode plate 2 constitute a cavity 4;
  • An exhaust port (not shown) is disposed on the cavity 4, and a low-melting glass solder is coated on the joint of the insulating support 3, the field emission anode plate 1 and the field emission cathode plate 2, and then heat-sealed, and finally The cavity 4 is evacuated and the exhaust port is sealed to obtain the field emission light source.
  • the materials and thicknesses of the transparent ceramic substrate 10, the anode conductive layer 11, the substrate 20, and the cathode conductive layer 21 are as described above, and are not described herein for the sake of space.
  • the insulating support 3 is preferably first cleaned, such as acetone, ethanol and deionized water.
  • the field emission anode plate 1 and the field emission cathode plate 2 are respectively obtained as follows:
  • a transparent ceramic substrate 10 (see FIG. 1) is obtained, the transparent ceramic substrate 10 is polished, washed, dried, and then the anode conductive layer 11 is plated on the surface of the transparent ceramic substrate 10 to obtain the anode plate 1.
  • Field emission cathode plate 2 A substrate 20 is obtained (see Figs. 2 and 3), the substrate 20 is polished, washed, dried, and then a conductive layer 210 and a cathode layer 211 are sequentially plated on the surface of the substrate 20.
  • the transparent ceramic substrate 10 and the substrate 20 in the field emission anode plate 1 and the field emission cathode plate 2 are preferably cleaned by acetone, ethanol and deionized water, and may of course be cleaned by other means; drying may be air dried and baked. Drying in a dry manner, of course, can also be dried in other ways.
  • the manner in which the surface of the transparent ceramic substrate 10 of the field emission anode plate 1 is plated with the anode conductive layer 11 is preferably a vapor deposition method or a magnetron sputtering method, and of course, other methods may be employed.
  • the material of the substrate 20 of the field emission cathode plate 2 may be selected from the prior art, and the surface of the substrate 20 may be coated with a conductive layer 210 such as an indium tin oxide layer, a silver layer, a metal aluminum layer, a gold layer or a chromium layer.
  • a plating method or a growth method may be employed in which a cathode layer 211 such as a carbon nanotube layer, a zinc oxide nanowire layer or a copper oxide nanowire layer is plated on the outer surface of the conductive layer 210.
  • the two ends of the support body 3 are respectively sealed with the field emission anode plate 1 and the field emission cathode plate 2, and the above manners may be used. Let me repeat.
  • the temperature of the heat sealing is preferably 380-550 ° C, and the time is 5-90 min, and the temperature and time can effectively ensure the melting of the low melting glass solder, and the insulating support
  • the body 3, the field emission anode plate 1 and the field emission cathode plate 2 are sealed at the joint.
  • the evacuation in this step is evacuated through an exhaust port that communicates with the cavity 4.
  • the vacuum degree of vacuuming is preferably from 1 ⁇ 10 -5 to 9.9 ⁇ 10 -5 Torr, in order to obtain a vacuum chamber 4 having a higher degree of vacuum, the degree of vacuum is preferably achieved by using an exhaust station, in order to obtain a better vacuum.
  • the degree of vacuum is preferably achieved by using an exhaust station, in order to obtain a better vacuum.
  • the preparation method of the above field emission light source only needs to seal the relevant components as required, and the final product can be obtained by vacuuming, the process is simple, the production efficiency is improved, the production cost is reduced, and the product is suitable for industrial production.
  • the red light field emission light source structure is as shown in FIG. 2, and the field emission light source comprises a field emission anode plate 1, a field emission cathode plate 2 and a support body 3; and the field emission anode plate 1 comprises Y 2 O 3 with a thickness of 0.5 mm.
  • the ITO thin film conductive layer 210 and the CNT thin film cathode layer 211 are in the vacuum chamber 4.
  • the aluminum film anode conductive layer 11 is disposed opposite to the CNT thin film cathode layer 211, and the pitch therebetween is 200 ⁇ m.
  • the specific preparation method is as follows:
  • Field emission anode plate 1 preparation Y 2 O 3 :Eu transparent ceramic substrate 10 having a size of 70 ⁇ 50 ⁇ 0.5 mm is cut, and both upper and lower sides are polished, and then Y 2 O 3 :Eu The transparent ceramic substrate 10 is ultrasonically treated by acetone, absolute ethanol and deionized water for 20 min, respectively, and then the cleaned Y 2 O 3 :Eu transparent ceramic substrate 10 is air-dried, and finally on a Y 2 O 3 :Eu transparent ceramic substrate. The surface of the 10 is vapor-deposited with an Al film as the anode conductive layer 11.
  • the two ends of the support body 3 are respectively connected to the outer surface of the transparent ceramic substrate 10 of the field emission anode plate 1 and the surface body 201 of the substrate 20 of the field emission cathode plate 2, so that the support body 3 and the field emission
  • the anode plate 1 and the field emission cathode plate 2 constitute a cavity 4, and the aluminum film anode conductive layer 11 is disposed opposite to the CNT film cathode layer 211, and an exhaust pipe is disposed at a corner of the field emission cathode plate 2 at a corner.
  • the configured low-melting glass slurry is applied to the field emission cathode plate 2, the junction between the field emission anode plate 1 and the support body 3, and then heated to 380 ° C for 90 minutes for sealing, to be low-melting glass paste
  • a getter is added to the exhaust port, placed in the exhaust station, and the cavity 4 is evacuated to 1 ⁇ 10 -5 , baked, and then sealed to obtain the red light field.
  • the light source is emitted.
  • the green light field emission light source structure is as shown in FIG. 3.
  • the field emission light source comprises a field emission anode plate 1, a field emission cathode plate 2 and a support body 3; and the field emission anode plate 1 comprises a 25 mm thickness Y 2 SiO 5 :
  • the Tb transparent ceramic substrate 10 is bonded to a surface thereof with a silver film anode conductive layer 11 having a thickness of 100 ⁇ m;
  • the field emission cathode plate 2 comprises a substrate 20 having a thickness of 025 mm and a cathode conductive layer 21 bonded to a surface body 201 of the substrate 20.
  • the cathode conductive layer 21 and the surface body 201 sequentially combine a chromium thin film conductive layer 210 having a thickness of 100 ⁇ m and a zinc nanowire thin film cathode layer 211 having a thickness of 10 ⁇ m; a silver film anode conductive layer of the support body 3 and the field emission anode plate 1 respectively
  • the outer surface is sealed and connected to the chromium thin film conductive layer 210 of the field emission cathode plate 2, and the vacuum storage body 4 is formed by the support body 3, the field emission anode plate 1 and the field emission cathode plate 2, wherein the zinc nanowire film cathode layer 211 is in the vacuum chamber 4.
  • the aluminum film anode conductive layer 11 is disposed opposite to the CNT film cathode layer 211, and the pitch therebetween is 0.8 cm.
  • the preparation method is as follows:
  • Field emission anode plate 1 preparation Y 2 SiO 5 :Tb transparent ceramic substrate 10 having a size of 70 ⁇ 50 ⁇ 25 mm is cut, and both upper and lower sides are polished, and then Y 2 SiO 5 :Tb is transparent.
  • the ceramic substrate 10 is ultrasonically treated by acetone, absolute ethanol and deionized water for 30 min, respectively, and then the cleaned Y 2 SiO 5 :Tb transparent ceramic substrate 10 is air-dried, and finally on the Y 2 SiO 5 :Tb transparent ceramic substrate 10 A silver film having a thickness of 100 ⁇ m was sputter-coated on the surface as the anode conductive layer 11.
  • the two ends of the support body 3 are respectively connected to the outer surface of the anode conductive layer 11 of the field emission anode plate 1 and the outer surface of the cathode conductive layer 21 of the field emission cathode plate 2, and the silver film anode conductive layer 11 and
  • the zinc oxide nanowire film cathode layer 211 is disposed oppositely such that the support body 3, the field emission anode plate 1 and the field emission cathode plate 2 constitute a cavity 4, and the support between the field emission anode plate 1 and the field emission cathode plate 2 3 Install an exhaust pipe in the gap, and then apply the configured low-melting glass paste to the field emission cathode plate 2, the junction between the field emission anode plate 1 and the support body 3, and then heat to 450 ° C for 30 min.
  • the preparation of the blue light-emitting field emitting device is similar in structure to that of Embodiment 1, except that the two ends of the support body 3 are respectively opposite to the outer surface of the anode conductive layer 11 of the field emission anode plate 1 and the substrate 20 of the field emission cathode plate 2.
  • the outer surface is sealingly connected and the cathode conductive layer 21 is in the vacuum chamber 4.
  • the preparation method is as follows:
  • (1) Field emission anode plate 1 preparation LaAlO 3 :Tm transparent ceramic substrate 10 having a size of 70 ⁇ 50 ⁇ 30 mm is cut, and both upper and lower sides are polished, and then LaAlO 3 :Tm transparent ceramic substrate 10 is sequentially processed. After ultrasonic treatment with acetone, absolute ethanol and deionized water for 30 min, respectively, the cleaned LaAlO 3 :Tm transparent ceramic substrate 10 was air-dried, and finally a layer of 300 ⁇ m was magnetron sputtered on the surface of LaAlO 3 :Tm transparent ceramic substrate 10. A magnesium film of a thickness is used as the anode conductive layer 11.
  • the two ends of the support body 3 are respectively connected to the outer surface of the anode conductive layer 11 of the field emission anode plate 1 and the outer surface edge of the cathode conductive layer 21 of the field emission cathode plate 2, so that the support body 3 and the field emission
  • the anode plate 1 and the field emission cathode plate 2 constitute a cavity 4, and the magnesium film anode conductive layer 11 is disposed opposite to the copper oxide nanowire film cathode layer 211, and the spacing between the two is 3 cm, and the field emission anode plate 1 and
  • An exhaust pipe is installed in the gap of the support body 3 between the field emission cathode plates 2, and the configured low-melting glass paste is applied to the field emission cathode plate 2, between the field emission anode plate 1 and the support body 3.
  • the joint is heated to 550 ° C for 5 min for sealing. After the low-melting glass paste is cooled and solidified, it is placed in the exhaust station, and the chamber 4 is evacuated to 9.9 ⁇ 10 -5 , baked, and then Sealing off, the red light field emission source is obtained.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
  • Vessels And Coating Films For Discharge Lamps (AREA)

Description

一种场发射阳极板、场发射光源及其制备方法 技术领域
本发明属于电光源技术领域，具体的说是涉及一种场发射阳极板、场发射光源及其制备方法。
 背景技术
电光源行业一直是世界各国竞相研究的热点，在世界经济中占据着非常重要的地位。目前广泛使用的光源为气体放电光源，这种光源的原理是将灯的内部经抽真空后充入含汞的混合气体，利用气体放电发光或气体放电产生的紫外光激发荧光粉发光。然而，气体放电光源的脉冲光闪容易导致人视觉疲劳，而且汞污染环境，随着社会和科技的进步，研究开发节能又环保的绿色光源来替代传统光源，成为各国竞相研究的重要课题。
场发射光源是电光源中的一种，为新兴光源，具有电流密度大、功耗低、响应快等优点，在平板显示器、X射线源、微波放大器等真空电子领域具有重要的应用前景。其原理是在电场作用下，低电势处的金属尖端、碳纳米管等电子发射体发射出电子，轰击高电势处的荧光体而发出可见光。
目前，场发射器件的研究中，主要应用于照明和显示领域，其具有工作电压低、无预热延迟、高度集成化，具有节约能源、环保、启动快、轻薄以及环境适应性强等优点。作为新一代照明领域的光源，其具有无汞，能耗低，发光均匀和光强度可调等优点，受到越来越多照明工作者的追捧，在照明行业内得到了快速的发展。在现阶段的场发射器件，主要是采用荧光粉作为阳极，通过电子束轰击荧光粉，荧光粉在电子束激发下产生可见光。一般荧光粉作为的场发射器件，选用硫化物、氧化物或者硅酸盐类荧光粉作为阳极发光材料。氧化物或者硅酸盐类的荧光粉，导电性相对比较差，在电子束轰击下，容易在阳极产生电荷积累，造成两极之间电势差下降，影响器件的发光效率。而使用导电性较好硫化物荧光粉制作的阳极板，在长时间的电子束激发下，容易产生硫化物的分解，释放出气体，不但降低了器件的真空度，而且“毒害”了阴极，最终降低了器件的寿命。另外，粉体作为场发射阳极，在电子束轰击下，粉体可能出现脱落的情况，造成器件阴极屏蔽，阳极发光不均匀的现象，降低了器件的寿命。
 技术问题
本发明的目的在于克服现有技术的上述不足，提供一种导电性好、透光性高和耐电子冲击性能稳定的场发射阳极板；
以及，含有上述场发射阳极板的场发射光源；
本发明还提供上述场发射光源的制备方法。
 技术解决方案
为了实现上述发明目的，本发明的技术方案如下：
一种场发射阳极板，包括透明陶瓷基板，在所述透明陶瓷基板一表面上结合有阳极导电层，所述透明陶瓷基板在阴极射线激发下发光。
以及，一种场发射光源，包括一场发射阳极板、一场发射阴极板和支撑体，所述场发射阳极板为上述的构件；所述场发射阴极板包括衬底和与所述衬底表面结合的阴极导电层；所述阳极导电层与所述阴极导电层相对设置，所述支撑体两端分别与所述场发射阳极板和场发射阴极板密封连接，由所述支撑体、场发射阳极板和场发射阴极板构成一真空腔体。
上述场发射光源制备方法，包括如下步骤：
制备一场发射阳极板、场发射阴极板和绝缘支撑体；其中，所述场发射阳极板包括透明陶瓷基板，所述透明陶瓷基板一表面上结合有阳极导电层，所述透明陶瓷基板在阴极射线激发下发光；所述场发射阴极板包括衬底和与所述衬底表面结合的阴极导电层；
将所述场发射阳极板的阳极导电层与所述场发射阴极板的阴极导电层相对设置，再将所述绝缘支撑体两端分别与所述场发射阳极板与所述场发射阴极板连接，使得所述支撑体、场发射阳极板和场发射阴极板构成一腔体；
在所述腔体上设置排气口，再在所述绝缘支撑体、场发射阳极板和场发射阴极板连接处上涂覆上低熔点玻璃焊料，然后加热封接，最后将所述腔体抽真空，密封排气口，得到所述场发射光源。
 有益效果
本发明的场发射阳极板采用能在阴极射线激发下发光的透明陶瓷为基板，该透明陶瓷基板有效提高了场发射阳极板的透光性和耐电子冲击性，增强了该阳极板稳定性能、耐腐蚀性能和耐磨特性，同时，使场发射阳极板能均匀发光，成本低；由场发射阳极板制成的场发射光源发光强度高且发光均匀，发光性能稳定，具有耐腐蚀和耐磨特性，使用寿命长；该场发射光源制备方法工序简单，提高了生产效率，降低了生产成本，适于工业化生产。
附图说明
图1是本发明场发射阳极板的结构示意图；
图2是本发明场发射光源的一种结构示意图；
图3是本发明场发射光源的另一种结构示意图；
图4是本发明场发射光源制备方法的流程示意图。
 本发明的实施方式
为了使本发明要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
本发明实施例提供一种导电性好、透光性高和耐电子冲击性能稳定的场发射阳极板1。如图1所示，其包括透明陶瓷基板10，在所述透明陶瓷基板10一表面上结合有阳极导电层11，该透明陶瓷基板10在阴极射线激发下发光。这样，该场发射阳极板1采用能在阴极射线激发下发光的透明陶瓷为基板，有效提高了场发射阳极板1的透光性和耐电子冲击性，同时，该透明陶瓷基板增强了该阳极板1稳定性能、耐腐蚀性能和耐磨特性，使场发射阳极板1能均匀发光，成本低。
具体地，上述实施例中透明陶瓷基板10的材质优选为Y2O3:Eu透明陶瓷、Y2O2S:Eu透明陶瓷、Y2SiO5:Tb透明陶瓷、Gd2O2S: Tb透明陶瓷、LaAlO3:Tm透明陶瓷、LaGaO3:Tm透明陶瓷中的一种。该类材质的透明陶瓷透明度和稳定性能高，耐电子冲击性强，并具有良好的耐腐蚀性能和耐磨特性。
进一步的，本实施例的透明陶瓷基板10厚度优选为0.5-30mm，该厚度的透明陶瓷基板10能有效的增强其抗压和抗机械能力，随着其厚度的增加，其抗压和抗机械能力也随会随之增强，但是其厚度也不易过厚，过厚的透明陶瓷基板10会影响其美观，增大其重量，增加其生产经济成本。阳极导电层11厚度优选为10nm-300μm，且其材质优选为金属铝、银、镁、铜或金，该阳极导电层11厚度决定了电子穿透的效率，同时也决定了导电层的面电阻，也就决定了场发射光源的发光效率，阳极导电层11厚度越厚，其面电阻也会相应的减小，但是会降低电子穿透效率，从而降低场发射光源的发光效率，如过厚就会造成电子无法穿透，导致场发射光源发光效率降低。因此，上述的阳极导电层11厚度能有效的使场发射阳极板1的面电阻和电子穿透效率保持平衡，使场发射阳极板1性能达到最佳；该阳极导电层11的上述材质具有优异的电子穿透性能，从而提高了场发射光源的发光效率。
本发明实施例还提供一种由上述场发射阳极板1制成的场发射光源。如图2、3所示，该场发射光源包括一场发射阳极板1、一场发射阴极板2和支撑体3；场发射阳极板1包括透明陶瓷基板10，其一表面上结合有阳极导电层11，透明陶瓷基板10在阴极射线激发下发光；场发射阴极板2包括衬底20和与该衬底20结合的阴极导电层21；支撑体3两端分别与该场发射阳极板1和场发射阴极板2密封连接，并由支撑体3、场发射阳极板1和场发射阴极板2构成一真空腔体4，且场发射阳极板1的阳极导电层11与场发射阴极板2的阴极导电层21相对设置。这样，阳极导电层11的外表面和阴极导电层21的外表面均处在真空腔体4内，且场发射光源包含上述的发射阳极板1，使得其发光强度高且发光均匀，发光性能稳定，具有耐腐蚀和耐磨特性，使用寿命长。
具体地，上述场发射光源实施例中，场发射阳极板1和场发射阴极板2间距优选为200μm -3cm。该范围的间距，能有效的保证电子穿透发射阳极板1中的阳极导电层11，提高该场发射光源的发光效率。
进一步地，上述场发射阴极板2的衬底20包括一平面本体201，该平面本体201与上述的阳极导电层11相对设置，且该平面本体201上结合该阴极导电层21，衬底20度厚度优选为0.5-30mm。衬底20保证了场发射阴极板2抗压和抗机械强度，并为阴极导电层21提供支撑本体。场发射阴极板2的阴极导电层21包括与平面本体201结合的导电层210，和与所述导电层210外表面结合的阴极层211。该导电层210主要起导电作用，其电阻优选大于0欧姆，小于或等于7欧姆；阴极层211起到电子发射体的作用，提供稳定的射向阳极导电层11的电子流。当然，衬底20也可以设有多个平面本体；上述支撑体3两端分别与该场发射阳极板1和场发射阴极板2密封连接方式可以有以下几种方式：
第一种方式：见图2，支撑体3两端分别与场发射阳极板1的透明陶瓷基板10外表面和场发射阴极板2的衬底20外表面密封连接，阳极导电层11和阴极导电层21均在真空腔体4内。该方式为本实施优选方案，可以在同等的实现该场发射阴极板2功能的同时，进一步降低生产成本和增强了场发射光源的安全性能，降低生产成本。
第二种方式：见图3支撑体3两端分别与场发射阳极板1的阳极导电层11外表面和场发射阴极板2的阴极导电层21外表面密封连接，阴极导电层21的阴极层211处在真空腔体4内。
第三种方式（图未显示）：支撑体3两端分别与场发射阳极板1的透明陶瓷基板10外表面和场发射阴极板2的阴极导电层21外表面密封连接，阳极导电层11和阴极层211均在真空腔体4内；或者支撑体3两端分别与场发射阳极板1的阳极导电层11外表面和场发射阴极板2的衬底20外表面密封连接，阴极导电层21处在真空腔体4内。
具体地，上述导电层210优选为氧化铟锡层、银层、金属铝层、金层或者铬层中的一种，其厚度优选为100 um-250nm；阴极层211优选为碳纳米管层、氧化锌纳米线层或氧化铜纳米线层中的一种，其厚度优选为0.5-30um。
本发明实施例进一步的提供了上述场发射光源的制备方法，该方法工艺流程图如图4所以示，该方法包括如下步骤：
S1. 获取场发射阳极板1（参见图1）、场发射阴极板2和绝缘支撑体3（参见图2）；所述场发射阳极板1包括透明陶瓷基板10和与透明陶瓷基板10表面结合的阳极导电层11，透明陶瓷基板在阴极射线激发下发光；场发射阴极板2包括衬底20和与所述衬底20表面结合的阴极导电层21；
S2. 将场发射阳极板1的阳极导电层11与场发射阴极板2的阴极导电层21相对设置，再将绝缘支撑体3两端分别与场发射阳极板1与场发射阴极板2连接，使得支撑体3、场发射阳极板1和场发射阴极板2构成一腔体4；
S3. 在腔体4上设置排气口（图未显示），再在绝缘支撑体3、场发射阳极板1和场发射阴极板2连接处上涂覆上低熔点玻璃焊料，然后加热封接，最后将所述腔体4抽真空，密封排气口，得到所述场发射光源。
具体地，上述场发射光源的制备方法的S1步骤中，透明陶瓷基板10、阳极导电层11、衬底20和阴极导电层21的材质与厚度如上所述，为了篇幅，在此不再熬述。绝缘支撑体3优选先进行清洗，如丙酮、乙醇和去离子水清洗。其中，场发射阳极板1、场发射阴极板2获取方法分别如下：
场发射阳极板1：获取透明陶瓷基板10（参见图1），将透明陶瓷基板10抛光，清洗，干燥，再在透明陶瓷基板10表面镀阳极导电层11，得到所述的阳极板1。
场发射阴极板2：获取衬底20（参见图2、3），将衬底20抛光，清洗，干燥，再在衬底20表面依次镀上导电层210和阴极层211。
上述场发射阳极板1、场发射阴极板2获取方法中的透明陶瓷基板10和衬底20清洗优选采用丙酮、乙醇和去离子水清洗，当然也可以采用其他方式清洗；干燥可以采用风干、烘干等方式干燥，当然也可以采用其他方式干燥。场发射阳极板1的透明陶瓷基板10表面镀阳极导电层11的方式优选采用蒸镀法或磁控溅射法，当然也可以采用其他方式。场发射阴极板2的衬底20的材质选用本技术领域常用的即可，衬底20表面镀导电层210如氧化铟锡层、银层、金属铝层、金层或者铬层的方式可以是蒸镀法或磁控溅射法，在导电层210外表面镀阴极层211如碳纳米管层、氧化锌纳米线层或氧化铜纳米线层的方式可以采用印刷法或生长法。
具体地，上述场发射光源的制备方法的S2步骤中，支撑体3两端分别与该场发射阳极板1和场发射阴极板2密封连接方式可以有上述几种方式，为了篇幅，在此不再赘述。
具体地，上述场发射光源的制备方法的S3步骤中，加热封接的温度优选为380-550℃，时间为5-90min，该温度和时间能有效的保证低熔点玻璃焊料熔融，将绝缘支撑体3、场发射阳极板1和场发射阴极板2连接处封接。该步骤中的抽真空是通过与腔体4相通的排气口抽真空。排气口设置有两种方式：1在场发射阴极板2边角处有一小孔上竖立一排气管，封接后，对排气管进行加热封离；2将排气管安装在场发射阳极板1和场发射阳极板2之间的支撑体3间隙中，封接以后再进行加热封离。抽真空的真空度优选为1×10-5～9.9×10-5¬，为获得一个真空度较高的真空腔体4，该真空度优选采用排气台来实现，为了获得较好的真空腔体4，在抽真空时，优选在排气管中放入消气剂。
上述场发射光源的制备方法只需将相关的部件按要求封接，抽真空就可获得最终产品，其工序简单，提高了生产效率，降低了生产成本，适于工业化生产。
现结合具体实例，对本发明进行进一步详细说明。
实施例1
发红光场发射光源结构如图2所示，该场发射光源包括一场发射阳极板1、一场发射阴极板2和支撑体3；场发射阳极板1包括0.5mm厚度的Y2O3:Eu透明陶瓷基板10，其一表面上结合有10nm厚度的铝膜阳极导电层11；场发射阴极板2包括0.5mm厚度的衬底20和与该衬底20一表面本体201结合的阴极导电层21，阴极导电层21与表面本体201依次结合250nm厚度的ITO薄膜导电层210和0.5um厚度的CNT薄膜阴极层211；支撑体3两端分别与该场发射阳极板1的透明陶瓷基板10外表面和场发射阴极板2的衬底20一表面本体201密封连接，并由支撑体3、场发射阳极板1和场发射阴极板2构成一真空腔体4，其中，铝膜阳极导电层11、ITO薄膜导电层210和CNT薄膜阴极层211处在真空腔体4内。铝膜阳极导电层11与CNT薄膜阴极层211相对设置，且两者间距为200μm。
其具体制备方法如下：
（1）场发射阳极板1制备：切割尺寸为70×50×0.5mm尺寸的Y2O3:Eu透明陶瓷基板10，对其上下两面都经行抛光处理，再将Y2O3:Eu透明陶瓷基板10依次分别通过丙酮，无水乙醇和去离子水超声处理20min，然后将清洗干净的Y2O3:Eu透明陶瓷基板10进行风干处理，最后在Y2O3:Eu透明陶瓷基板10表面蒸镀一层Al薄膜作为阳极导电层11。
（2）场发射阴极板2制备：切割尺寸70×60×0.5mm尺寸的衬底20，将其两面抛光处理，通过丙酮，无水乙醇和去离子水依次进行超声处理，风干，再在其表面溅射一层ITO薄膜导电层210，然后在导电层210外表面印刷一层CNT薄膜阴极层211。
（3）封接：将支撑体3两端分别与该场发射阳极板1的透明陶瓷基板10外表面和场发射阴极板2的衬底20一表面本体201连接，使得支撑体3、场发射阳极板1和场发射阴极板2构成一腔体4，且铝膜阳极导电层11与CNT薄膜阴极层211相对设置，并在场发射阴极板2边角处有一小孔上位置一排气管，再将配置好的低熔点玻璃浆料，涂覆到场发射阴极板2，场发射阳极板1和支撑体3之间的连接处，然后加热到380℃保温90min进行封接，待低熔点玻璃浆料冷却凝固后，在排气口中加入消气剂，放入到排气台，对腔体4进行抽真空至1×10-5，烘烤，然后进行封离，得到所述的发红光场发射光源。
实施例2
发绿光场发射光源结构如图3所示，该场发射光源包括一场发射阳极板1、一场发射阴极板2和支撑体3；场发射阳极板1包括25mm厚度的Y2SiO5:Tb透明陶瓷基板10，其一表面上结合有100μm厚度的银膜阳极导电层11；场发射阴极板2包括025mm厚度的衬底20和与该衬底20一表面本体201结合的阴极导电层21，阴极导电层21与表面本体201依次结合100μm厚度的铬薄膜导电层210和10um厚度的锌纳米线薄膜阴极层211；支撑体3两端分别与该场发射阳极板1的银膜阳极导电层11外表面和场发射阴极板2的铬薄膜导电层210密封连接，并由支撑体3、场发射阳极板1和场发射阴极板2构成一真空腔体4，其中，锌纳米线薄膜阴极层211处在真空腔体4内。铝膜阳极导电层11与CNT薄膜阴极层211相对设置，且两者间距为0.8cm。
其制备方法如下：
（1）场发射阳极板1制备：切割尺寸为70×50×25mm尺寸的Y2SiO5:Tb透明陶瓷基板10，对其上下两面都经行抛光处理，再将Y2SiO5:Tb透明陶瓷基板10依次分别通过丙酮，无水乙醇和去离子水超声处理30min，然后将清洗干净的Y2SiO5:Tb透明陶瓷基板10进行风干处理，最后在Y2SiO5:Tb透明陶瓷基板10表面磁控溅射一层100μm厚度的银薄膜作为阳极导电层11。
（2）场发射阴极板2制备：切割尺寸70×60×25mm尺寸的衬底20，将其两面抛光处理，通过丙酮，无水乙醇和去离子水依次进行超声处理，风干，再在其表面溅射一层100μm厚度的铬薄膜导电层210，然后在导电层210外表面印刷一层10um厚度的氧化锌纳米线薄膜阴极层211。
（3）封接：将支撑体3两端分别与该场发射阳极板1的阳极导电层11外表面和场发射阴极板2的阴极导电层21外表面连接，且银薄膜阳极导电层11与氧化锌纳米线薄膜阴极层211相对设置，使得支撑体3、场发射阳极板1和场发射阴极板2构成一腔体4，并在场发射阳极板1和场发射阴极板2之间的支撑体3间隙中安装上排气管，再将配置好的低熔点玻璃浆料，涂覆到场发射阴极板2，场发射阳极板1和支撑体3之间的连接处，然后加热到450℃保温30min进行封接，待低熔点玻璃浆料冷却凝固后，在排气口中加入消气剂，放入到排气台，对腔体4进行抽真空至5×10-5，烘烤，然后进行封离，得到所述的发红光场发射光源。
实施例3
发蓝光场发射器件的制备，其结构类似实施例1所述，不同之处在于支撑体3两端分别与场发射阳极板1的阳极导电层11外表面和场发射阴极板2的衬底20外表面密封连接，阴极导电层21处在真空腔体4内。其制备方法如下：
（1）场发射阳极板1制备：切割尺寸为70×50×30mm尺寸的LaAlO3:Tm透明陶瓷基板10，对其上下两面都经行抛光处理，再将LaAlO3:Tm透明陶瓷基板10依次分别通过丙酮，无水乙醇和去离子水超声处理30min，然后将清洗干净的LaAlO3:Tm透明陶瓷基板10进行风干处理，最后在LaAlO3:Tm透明陶瓷基板10表面磁控溅射一层300μm厚度的镁薄膜作为阳极导电层11。
（2）场发射阴极板2制备：切割尺寸70×60×30mm尺寸的衬底20，将其两面抛光处理，通过丙酮，无水乙醇和去离子水依次进行超声处理，风干，再在其表面溅射一层350nm厚度的层铝薄膜导电层210，然后在导电层210外表面印刷一层30um厚度的氧化铜纳米线薄膜阴极层211。
（3）封接：将支撑体3两端分别与该场发射阳极板1的阳极导电层11外表面和场发射阴极板2的阴极导电层21外表面边沿连接，使得支撑体3、场发射阳极板1和场发射阴极板2构成一腔体4，镁薄膜阳极导电层11与氧化铜纳米线薄膜阴极层211相对设置，且两者之间的间距为3cm，并在场发射阳极板1和场发射阴极板2之间的支撑体3间隙中安装上排气管，再将配置好的低熔点玻璃浆料，涂覆到场发射阴极板2，场发射阳极板1和支撑体3之间的连接处，然后加热到550℃保温5min进行封接，待低熔点玻璃浆料冷却凝固后，放入到排气台，对腔体4进行抽真空至9.9×10-5，烘烤，然后进行封离，得到所述的发红光场发射光源。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种场发射阳极板，其特征在于：包括透明陶瓷基板，在所述透明陶瓷基板一表面上结合有阳极导电层，所述透明陶瓷基板在阴极射线激发下发光。
  2. 根据权利要求1所述的场发射阳极板，其特征在于：所述透明陶瓷基板的材质为Y2O3:Eu透明陶瓷、Y2O2S:Eu透明陶瓷、Y2SiO5:Tb透明陶瓷、Gd2O2S: Tb透明陶瓷、LaAlO3:Tm透明陶瓷、LaGaO3:Tm透明陶瓷中的一种。
  3. 根据权利要求1或2所述的场发射阳极板，其特征在于：
    所述透明陶瓷基板厚度为0.5-30mm；
    所述阳极导电层厚度为10nm-300μm，所述阳极导电层的材质为金属铝、银、镁、铜或金。
  4. 一种场发射光源，包括一场发射阳极板、一场发射阴极板和支撑体，其特征在于：所述场发射阳极板为权利要求1-3任一项所述的构件；所述场发射阴极板包括衬底和与所述衬底表面结合的阴极导电层；所述阳极导电层与所述阴极导电层相对设置，所述支撑体两端分别与所述场发射阳极板和场发射阴极板密封连接，由所述支撑体、场发射阳极板和场发射阴极板构成一真空腔体。
  5. 根据权利要求4所述的场发射光源，其特征在于：所述场发射阳极板和场发射阴极板间距为200μm-3cm。
  6. 根据权利要求4或5所述的场发射光源，其特征在于：所述衬底包括一平面本体，所述平面本体与阳极导电层相对设置，所述阴极导电层结合在所述平面本体与阳极导电层相对的表面上。
  7. 根据权利要求6所述的场发射光源，其特征在于：所述阴极导电层包括与平面本体结合的导电层，和与所述导电层外表面结合的阴极层；所述导电层为氧化铟锡层、银层、金属铝层、金层或者铬层，所述阴极层为碳纳米管层、氧化锌纳米线层或氧化铜纳米线层；
    所述衬底度厚度为0.5-30mm；所述导电层的厚度为100 um-250nm；所述阴极层厚度为0.5-30um。
  8. 一种场发射光源制备方法，包括如下步骤：
    制备一场发射阳极板、场发射阴极板和绝缘支撑体；所述场发射阳极板包括透明陶瓷基板，所述透明陶瓷基板一表面上结合有阳极导电层，所述透明陶瓷基板在阴极射线激发下发光；所述场发射阴极板包括衬底和与所述衬底表面结合的阴极导电层；
    将所述场发射阳极板的阳极导电层与所述场发射阴极板的阴极导电层相对设置，再将所述绝缘支撑体两端分别与所述场发射阳极板与所述场发射阴极板连接，使得所述支撑体、场发射阳极板和场发射阴极板构成一腔体；
    在所述腔体上设置排气口，再在所述绝缘支撑体、场发射阳极板和场发射阴极板连接处上涂覆上低熔点玻璃焊料，然后加热封接，最后将所述腔体抽真空，密封排气口，得到所述场发射光源。
  9. 根据权利要求8所述的场发射光源制备方法，其特征在于：所述阳极板的制备方法如下：
    取透明陶瓷基板，将所述透明陶瓷基板清洗、干燥，再在所述透明陶瓷基板表面镀阳极导电层，得到所述的场发射阳极板。
  10. 根据权利要求9所述的场发射光源制备方法，其特征在于：
    所述抽真空真空度为1×10-5～9.9×10-5¬；
    所述加热封接的温度为380-550℃，时间为5-90min；
    所述透明陶瓷基板表面镀阳极导电层的方式为蒸镀法或磁控溅射法。
PCT/CN2010/077312 2010-09-26 2010-09-26 一种场发射阳极板、场发射光源及其制备方法 Ceased WO2012037733A1 (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN2010800680999A CN103003910A (zh) 2010-09-26 2010-09-26 一种场发射阳极板、场发射光源及其制备方法
US13/822,187 US20130175918A1 (en) 2010-09-26 2010-09-26 Field emission anode plate, field emission light source and manufacturing method for light source
EP10857447.6A EP2620972A4 (en) 2010-09-26 2010-09-26 FIELD EMISSION PLATE, FIELD EMISSION LIGHT SOURCE AND MANUFACTURING METHOD FOR A LIGHT SOURCE
JP2013526297A JP5648127B2 (ja) 2010-09-26 2010-09-26 電界放出陽極板、電界放出光源及びその製造方法
PCT/CN2010/077312 WO2012037733A1 (zh) 2010-09-26 2010-09-26 一种场发射阳极板、场发射光源及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2010/077312 WO2012037733A1 (zh) 2010-09-26 2010-09-26 一种场发射阳极板、场发射光源及其制备方法

Publications (1)

Publication Number Publication Date
WO2012037733A1 true WO2012037733A1 (zh) 2012-03-29

Family

ID=45873393

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2010/077312 Ceased WO2012037733A1 (zh) 2010-09-26 2010-09-26 一种场发射阳极板、场发射光源及其制备方法

Country Status (5)

Country Link
US (1) US20130175918A1 (zh)
EP (1) EP2620972A4 (zh)
JP (1) JP5648127B2 (zh)
CN (1) CN103003910A (zh)
WO (1) WO2012037733A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140021500A1 (en) * 2010-12-20 2014-01-23 Ocean's King Lighting Science & Technology Co., Ltd. Light emitting device and manufacturing method thereof
CN103646847A (zh) * 2013-12-07 2014-03-19 四川天微电子有限责任公司 紫外线发射器

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1556540A (zh) * 2003-12-30 2004-12-22 中国科学院上海微系统与信息技术研究 场发射显示器件的高真空封装方法
CN1658364A (zh) * 2004-02-17 2005-08-24 株式会社日立显示器 显示装置
CN1285067C (zh) * 2001-11-29 2006-11-15 京东方科技集团股份有限公司 基于碳纳米管平板显示器及其制作方法
CN100335914C (zh) * 2002-02-08 2007-09-05 株式会社东芝 X射线检测器及x射线检测器的制造方法
CN101040364A (zh) * 2004-10-15 2007-09-19 株式会社东芝 图像显示器件
US7612342B1 (en) * 2005-09-27 2009-11-03 Radiation Monitoring Devices, Inc. Very bright scintillators
JP2010027704A (ja) * 2008-07-16 2010-02-04 Stanley Electric Co Ltd 蛍光体セラミック板を用いた発光装置の製造方法
CN101698602A (zh) * 2009-11-04 2010-04-28 中国科学院上海硅酸盐研究所 一种组成和结构可设计的氧化钇基透明陶瓷的制备方法
CN101817639A (zh) * 2010-01-26 2010-09-01 海洋王照明科技股份有限公司 增强型绿色发光玻璃及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0253589A1 (en) * 1986-07-14 1988-01-20 AT&T Corp. Display devices utilizing crystalline and powder phosphors
US5644193A (en) * 1993-12-17 1997-07-01 Kabushiki Kaisha Toshiba Phosphor, cathode-ray tube, fluorescent lamp and radiation intensifying screen
JP3639809B2 (ja) * 2000-09-01 2005-04-20 キヤノン株式会社 電子放出素子，電子放出装置，発光装置及び画像表示装置
EP1227139B1 (en) * 2001-01-24 2006-04-05 Ahmet Cüneyt Prof. Dr. Tas Method of producing crystalline phosphor powders at low temperature
JP3663171B2 (ja) * 2001-12-27 2005-06-22 財団法人工業技術研究院 Ｆｅｄパネル及びその製造方法
JP2006164854A (ja) * 2004-12-09 2006-06-22 Toshiba Corp 蛍光面及び画像表示装置
CN101160638A (zh) * 2005-04-18 2008-04-09 旭硝子株式会社 电子发射体、场致发射显示装置、冷阴极荧光管、平面型照明装置以及电子发射材料
US7336023B2 (en) * 2006-02-08 2008-02-26 Youh Meng-Jey Cold cathode field emission devices having selective wavelength radiation
WO2008111350A1 (ja) * 2007-03-09 2008-09-18 Kabushiki Kaisha Toshiba 蛍光体の表面処理方法、及び平面表示装置の製造方法
KR20090069842A (ko) * 2007-12-26 2009-07-01 삼성에스디아이 주식회사 백색 형광체, 이를 이용하는 발광 유닛, 및 이 발광 유닛을갖는 표시 장치
JP2010192245A (ja) * 2009-02-18 2010-09-02 Nec Corp エミッタの製造方法、エミッタ、電界放出発光素子の製造方法、電界放出発光素子及び照明装置
EP2620974B1 (en) * 2010-09-20 2015-02-25 Ocean's King Lighting Science&Technology Co., Ltd. Field emission light source device and manufacturing method thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1285067C (zh) * 2001-11-29 2006-11-15 京东方科技集团股份有限公司 基于碳纳米管平板显示器及其制作方法
CN100335914C (zh) * 2002-02-08 2007-09-05 株式会社东芝 X射线检测器及x射线检测器的制造方法
CN1556540A (zh) * 2003-12-30 2004-12-22 中国科学院上海微系统与信息技术研究 场发射显示器件的高真空封装方法
CN1658364A (zh) * 2004-02-17 2005-08-24 株式会社日立显示器 显示装置
CN101040364A (zh) * 2004-10-15 2007-09-19 株式会社东芝 图像显示器件
US7612342B1 (en) * 2005-09-27 2009-11-03 Radiation Monitoring Devices, Inc. Very bright scintillators
JP2010027704A (ja) * 2008-07-16 2010-02-04 Stanley Electric Co Ltd 蛍光体セラミック板を用いた発光装置の製造方法
CN101698602A (zh) * 2009-11-04 2010-04-28 中国科学院上海硅酸盐研究所 一种组成和结构可设计的氧化钇基透明陶瓷的制备方法
CN101817639A (zh) * 2010-01-26 2010-09-01 海洋王照明科技股份有限公司 增强型绿色发光玻璃及其制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2620972A4 *

Also Published As

Publication number Publication date
JP5648127B2 (ja) 2015-01-07
EP2620972A4 (en) 2014-04-02
JP2013541134A (ja) 2013-11-07
CN103003910A (zh) 2013-03-27
EP2620972A1 (en) 2013-07-31
US20130175918A1 (en) 2013-07-11

Similar Documents

Publication Publication Date Title
CN100583349C (zh) 场发射阴极、其制造方法及平板型光源
CN102403188A (zh) 场发射平面光源及其制备方法
CN101714496B (zh) 利用多层薄膜型电子源的平面气体激发光源
WO2012037733A1 (zh) 一种场发射阳极板、场发射光源及其制备方法
JP5926709B2 (ja) 電界電子放出膜、電界電子放出素子、発光素子およびそれらの製造方法
CN202503028U (zh) 一种薄膜电致发光器件
CN102906849B (zh) 场发射平面光源及其制作方法
CN201114861Y (zh) 一种可产生白光的有机电致发光器件
JP5649734B2 (ja) 電界放出光源素子及びその製造方法
JP6130157B2 (ja) 電界電子放出素子およびそれを用いた発光素子の製造方法
WO2011130923A1 (zh) 氧化铜纳米线的制备方法
CN102549710B (zh) 场致发射白光的装置
CN102906823B (zh) 导电胶混合物、荧光屏阳极板及其制造方法
CN113471180B (zh) 一种气凝胶智慧光能路灯
CN1710691A (zh) 高光效低工作电压气体放电灯管及其制备工艺
CN203607451U (zh) 高光透玻璃基板led照明装置
CN211738663U (zh) 一种led螺旋灯
CN2515918Y (zh) 碳纳米管平板型荧光光源
TWM448783U (zh) 場發射陽極元件及其場發射燈源
CN1971953A (zh) 柔性白光量子点电致发光器件及其制备方法
CN101661865A (zh) 利用多孔硅弹道电子发射的平面光源
CN104051228A (zh) 一种场发射光源
CN1909154A (zh) 密封型三极场发射发光管及其制作工艺
TW200414266A (en) Cold cathode field emission flat lamp having carbon nanometer materials and manufacturing method thereof
KR20050112531A (ko) 선형태의 방전공간을 가지는 평면램프의 전극구조 및 제작 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10857447

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2013526297

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 13822187

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2010857447

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE